JP2004360026A - Plating facility and plating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform plating in a state where the whole surface of a porous body is uniformly brought into close contact with the surface of a substrate to be plated without enlarging a load. <P>SOLUTION: The facility comprises: a substrate stage 504 for holding a substrate W; a cathode part 506 provided with a sealing material 514 for water-tightly sealing the circumferential part of the surface of the substrate to be plated and a cathode electrode 512 for energizing the substrate; an electrode head 502 provided with an anode 526 and a porous body 528 having water retainability at the upper and lower part; a plating liquid injection means 544 for injecting a plating liquid to the space between the anode and the surface of the substrate to be plated; a pressing mechanism 540 for pressing the porous body against the surface of the substrate to be plated under an optional pressure; a power source 550 for applying plating voltage between the cathode electrode and the anode; and a plating liquid exclusion mechanism for excluding the plating liquid present in the gap between the porous body and the surface of the substrate to be plated held by a substrate stage when the porous body is pressed against the surface to be plated. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plating apparatus and a plating method, and more particularly to a plating apparatus and a plating method used for forming wiring by embedding a metal (wiring material) such as copper in a fine wiring pattern formed on a semiconductor substrate. .
[0002]
[Prior art]
Recently, fine recesses for wiring such as circuit-shaped wiring grooves (trench) and fine holes (via holes) are formed on a semiconductor substrate, and these are filled with copper (wiring material) by copper plating, and the remaining copper is formed. A circuit is formed by removing a layer (plating film) by means such as CMP. In this technique, a copper plating film is selectively deposited in a wiring groove or a fine hole of a circuit shape, and in other parts, the smaller the copper plating film is deposited, in order to reduce the load of subsequent CMP. preferable. Heretofore, in order to achieve such an object, there has been devised a plating solution such as a bath composition of a plating solution and a brightener to be used.
[0003]
On the other hand, as a technique for selectively depositing a copper plating film in a wiring groove or the like in a circuit shape, a porous body is brought into contact with a substrate such as a semiconductor wafer, and plating is performed while relatively moving in a contact direction. The method of doing is known. Examples of the porous material used in this technology include PVA, porous Teflon (registered trademark), polypropylene, or the like, which is knitted into a fibrous form, processed into a paper form, or gelated silicon oxide, agar, or the like. Are generally used (for example, see Patent Document 1).
[0004]
[Patent Document 1]
JP 2000-23278
[0005]
[Problems to be solved by the invention]
In order to completely embed a wiring material such as copper in the wiring groove and other pattern parts to form a copper wiring, a copper layer with a considerable thickness is formed in addition to the pattern part and a film is formed in other parts than the pattern part It is necessary to remove the surplus copper layer left by the CMP method. For this reason, when the amount of copper to be removed is large, the CMP time is prolonged, which not only leads to an increase in cost, but also, if there is in-plane non-uniformity in the polished surface of the substrate after CMP, after polishing. The depth of the remaining wiring differs in the substrate, and as a result, the longer the polishing time, the greater the dependency of the wiring performance on the CMP performance.
[0006]
In order to solve such a problem, the bath composition of the plating solution, the brightener to be used, and the like have been devised with the plating solution, and these objects can be achieved to some extent, but there are certain limitations. .
[0007]
On the other hand, in the method in which the porous body is brought into contact with the substrate and plating is performed while moving the porous body relatively in the contact direction, the supply amount of the plating solution is changed in the uneven portion, that is, provided on the surface to be plated of the substrate. Attempts have been made to improve the flatness by ensuring that a plating solution contributing to plating exists only in the recess. However, due to the surface roughness of the surface of the porous body or the undulation or warpage generated in the porous body when the porous body is pressed toward the surface to be plated of the substrate W, the entire surface of the porous body is covered with the surface of the substrate to be plated. 33, it is difficult to uniformly press and adhere to each other. Therefore, as shown in FIG. 33, a gap S is locally generated between the porous body A and the surface P to be plated of the substrate W. The plating solution Q is present in the plating solution Q, and the plating solution Q ²⁺ There is a problem that ions such as these contribute to plating and lead to non-uniform in-plane plating.
[0008]
It is considered that the flatness is improved by increasing the load for contacting the porous body and crushing the porous space, but in this case, it is necessary to apply a very large load to the substrate. For this reason, when a soft insulating film such as a low-k material is targeted, it is difficult to realize the film because the film is broken or the plating surface is easily damaged.
[0009]
The present invention has been made in view of the above circumstances, without increasing the load, a plating apparatus capable of performing plating in a state where the entire surface of the porous body is uniformly adhered to the surface to be plated of the substrate, and An object is to provide a plating method.
[0010]
[Means for Solving the Problems]
The invention according to claim 1 is a substrate stage for holding a substrate, a sealing material that abuts against a peripheral portion of a surface to be plated of the substrate held by the substrate stage and seals the peripheral portion in a watertight manner, An electrode head comprising: a cathode portion provided with a cathode electrode for supplying electricity by contacting with the electrode portion; and an electrode head vertically provided above and below the cathode portion and vertically movable with an anode and a water-retentive porous body; Plating injecting means for injecting a plating solution between the substrate and the surface to be plated held by the substrate stage, and pressing to press the porous body against the surface to be plated of the substrate held by the substrate stage with an arbitrary pressure. A mechanism, a power source for applying a plating voltage between the cathode electrode and the anode, and a power source for pressing the porous body against a surface to be plated of a substrate held by the substrate stage with an arbitrary pressure. A plating apparatus characterized by having a plating-discharging mechanism to eliminate the plating solution present in the gap between the quality body and the surface to be plated.
[0011]
As described above, when the porous body is pressed against the surface to be plated of the substrate held by the substrate stage with an arbitrary pressure, the plating solution existing in the gap between the porous body and the surface to be plated is removed, whereby the load is reduced. The plating can be performed in a state where the entire surface of the porous body is uniformly brought into close contact with the surface to be plated of the substrate without increasing the size.
[0012]
In the invention described in claim 2, the plating solution elimination mechanism is injected between the substrate held by the substrate stage, the porous body, and the anode and the surface to be plated of the substrate held by the substrate stage. 2. The plating apparatus according to claim 1, further comprising a mechanism for relatively moving at least two of the plating solutions.
Thus, for example, before and after pressing the porous body at an arbitrary pressure on the surface to be plated of the substrate held by the substrate stage, the substrate held by the substrate stage and the porous body are relatively rotated to obtain a porous body. The plating solution existing in the gap between the substrate and the surface to be plated of the substrate can be removed outward by the centrifugal force accompanying this rotation.
[0013]
In the invention described in claim 3, the plating solution elimination mechanism is injected between the substrate held by the substrate stage, the porous body, and the anode and the surface to be plated of the substrate held by the substrate stage. The plating apparatus according to claim 1, further comprising a mechanism for vibrating at least one of the plating solutions.
For example, by using a vibrator to vibrate a substrate or a porous body held on a substrate stage, it is possible to smoothly remove a plating solution present in a gap between the porous body and a surface to be plated of the substrate. it can.
[0014]
In the invention described in claim 4, the plating solution elimination mechanism is injected between the substrate held by the substrate stage, the porous body, and the anode and the surface to be plated of the substrate held by the substrate stage. The plating apparatus according to claim 1, further comprising a mechanism for vibrating at least one of the plating solutions in a direction perpendicular to a plating surface of the substrate held by the substrate stage.
In this way, by vibrating in the direction perpendicular to the plating surface of the substrate so that the porous body and the plating surface of the substrate do not slide against each other, it is possible to prevent the plating surface from being damaged. Can be.
[0015]
According to a fifth aspect of the present invention, in the plating apparatus according to the third or fourth aspect, the vibrating mechanism uses an ultrasonic wave or a vibrator using an exciting coil. is there. Thus, high frequency vibration can be given by using ultrasonic waves.
The invention according to claim 6 is the plating apparatus according to claim 3 or 4, wherein the vibrating mechanism is constituted by a piezo vibrator. As described above, by using the piezo vibrator, the mechanism can be made compact.
[0016]
The invention according to claim 7 is the plating apparatus according to claim 3 or 4, wherein the mechanism for vibrating utilizes pressure vibration. Thus, the plating solution can be mainly vibrated by utilizing the pressure vibration.
[0017]
The invention according to claim 8 is characterized in that the plating solution elimination mechanism includes an anode chamber containing the anode therein and having an opening end closed by the porous body, and a pressure control unit for controlling a pressure in the anode chamber. The plating apparatus according to claim 1, further comprising:
As a result, the pressure in the anode chamber is set to a pressure lower than the atmospheric pressure (negative pressure), and the plating solution existing in the gap between the porous body and the surface to be plated of the substrate is sucked, so that the plating solution becomes porous. The plating solution can be expelled from the gap by facilitating flow through the interior of the body into the anode chamber.
[0018]
According to a ninth aspect of the present invention, a seed layer is formed on a substrate having fine recesses for wiring, and a plating solution is applied between the seed layer and the anode while plating is performed to perform plating. A plating method of filling a wiring material into the porous body having a water retention property disposed between the seed layer and the anode, before and after pressing the seed layer at an arbitrary pressure, the porous body and The plating method is characterized in that plating is performed by removing a plating solution present between the seed layer and the anode, and then conducting current between the seed layer and the anode.
The invention according to claim 10 is the plating method according to claim 9, wherein energization is performed only when the porous body is in contact with the seed layer.
[0019]
According to an eleventh aspect of the present invention, there is provided a loading / unloading unit for loading / unloading the substrate, the plating apparatus according to any one of claims 1 to 8, a cleaning / drying device for cleaning and drying the substrate, the loading / unloading unit, A substrate processing apparatus comprising a transfer device that transfers a substrate between a plating device and the cleaning / drying device.
According to a twelfth aspect of the present invention, in the substrate processing apparatus according to the eleventh aspect, there is further provided a polishing apparatus for polishing and removing an unnecessary metal film formed on the surface of the substrate by the plating apparatus to flatten the unnecessary metal film. is there.
[0020]
According to a thirteenth aspect of the present invention, there is provided the substrate processing apparatus according to the eleventh or twelfth aspect, further comprising a heat treatment apparatus for performing a heat treatment on the substrate on which the metal film is formed by the plating apparatus.
This allows the substrate to be subjected to a heat treatment (annealing treatment) before the unnecessary metal film is polished and removed by the polishing apparatus. It can be made to show a good effect.
[0021]
14. The substrate processing apparatus according to claim 11, further comprising a bevel etching apparatus for etching and removing a metal film attached or formed on a peripheral portion of the substrate. It is.
Thereby, for example, a metal film for embedding can be formed on the surface of the substrate, and immediately after being cleaned by the cleaning device, the metal film formed on the bevel portion of the substrate can be etched by the bevel etching device.
[0022]
The invention according to claim 15 further includes a monitor unit that monitors at least one of a voltage value and a current value when a voltage is applied between the anode and the cathode electrode of the plating apparatus. A substrate processing apparatus according to any one of claims 11 to 14.
Thereby, the end point (end point) of plating by the plating apparatus can be detected by the monitor unit, and the feedback can be performed to terminate the plating.
[0023]
The invention according to claim 16 further comprises a film thickness measuring device for measuring the film thickness of the metal film formed on the substrate surface. is there.
Thus, a metal film having a predetermined thickness can be formed with good reproducibility by measuring the thickness of the metal film on the substrate surface and feeding back the measurement result to increase or decrease the plating time as needed.
[0024]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. This embodiment shows an example in which copper as a wiring material is embedded in a fine concave portion for wiring provided on the surface of a substrate such as a semiconductor wafer to form a wiring made of a copper layer. Of course, other wiring materials may be used.
[0025]
An example of forming a copper wiring in a semiconductor device will be described with reference to FIG. As shown in FIG. 1A, for example, SiO 2 is formed on a conductive layer 1 a on a semiconductor substrate 1 on which a semiconductor element is formed. ₂ An insulating film 2 such as an oxide film or a Low-K material film is deposited, and a fine hole (via hole) 3 as a fine concave portion for wiring and a wiring groove are formed inside the insulating film 2 by, for example, lithography and etching technology. A (trench) 4 is formed, and a barrier layer 5 made of TaN or the like is formed thereon, and a seed layer 6 as a power supply layer for electrolytic plating is further formed thereon by sputtering or the like.
[0026]
Then, as shown in FIG. 1B, the surface of the substrate W is plated with copper so that the fine holes 3 and the wiring grooves 4 of the substrate W are filled with copper, and the copper layer 7 is formed on the insulating film 2. Is deposited. Thereafter, the barrier layer 5, the seed layer 6, and the copper layer 7 on the insulating film 2 are removed by chemical mechanical polishing (CMP) or the like, and the surface of the copper layer 7 filled in the micropores 3 and the wiring grooves 4 is removed. And the surface of the insulating film 2 are made substantially flush with each other. Thus, as shown in FIG. 1C, a wiring (copper wiring) 8 including the seed layer 6 and the copper layer 7 is formed inside the insulating film 2.
Next, as shown in FIG. 1D, electroless plating is performed on the surface of the substrate W, and a protective film 9 made of a Co alloy, a Ni alloy, or the like is selectively formed on the surface of the wiring 8, and thereby, Then, the surface of the wiring 8 is covered and protected with a protective film 9.
[0027]
FIG. 2 is a plan view of a substrate processing apparatus provided with a plating apparatus according to an embodiment of the present invention. As shown in FIG. 2, the substrate processing apparatus includes a rectangular device frame 12 in which a transfer box 10 containing a large number of substrates such as semiconductor wafers can be detachably mounted, for example, inside a smif box or the like. Inside the apparatus frame 12, a loading / unloading station 14 and a movable transfer robot 16 for transferring substrates between the loading / unloading station 14 are provided. A pair of plating devices 18 are arranged on both sides of the transfer robot 16 with the transfer robot 16 interposed therebetween. Further, on one side of the transfer robot 16, a cleaning / drying device 20 and a bevel etching / rear surface are provided. A cleaning device 22 and a film thickness measuring device 24 are arranged in series, and a heat treatment (annealing) device 26, a pretreatment device 28, an electroless plating device 30, and a polishing device 32 are arranged in series on the other side.
[0028]
Here, the device frame 12 is subjected to a light-shielding process, so that the following steps in the device frame 12 can be performed in a light-shielded state, that is, without irradiating the wiring with light such as illumination light. ing. In this manner, by preventing the wiring from being irradiated with light, it is possible to prevent the wiring made of, for example, copper from being irradiated with light and causing a light potential difference, thereby preventing the wiring from being corroded by the light potential difference.
[0029]
FIG. 3 shows an outline of the plating apparatus 18. As shown in FIG. 3, the plating apparatus 18 includes a swing arm 500 that can swing in the horizontal direction, and an electrode head 502 is rotatably supported at the tip of the swing arm 500. On the other hand, a substrate stage 504 that holds the substrate W with its surface (plated surface) facing upward, which is located below the electrode head 502, is arranged to be vertically movable, and above the substrate stage 504, A cathode portion 506 is arranged so as to surround the periphery of 504. In this example, an electrode head having a diameter slightly smaller than the diameter of the substrate stage 504 is used as the electrode head 502, and the electrode position of the substrate stage 504 is not changed without changing the relative position between the electrode head 502 and the substrate stage 504. An example is shown in which plating can be performed over almost the entire surface (plated surface) of the substrate W held at 504.
[0030]
A ring-shaped vacuum suction groove 504b communicating with a vacuum passage 504a provided inside is provided in a peripheral portion of the upper surface of the substrate stage 504, and seal rings 508, 510 are provided on both inside and outside of the vacuum suction groove 504b. Is installed. As a result, the substrate W is placed on the upper surface of the substrate stage 504, and the inside of the vacuum suction groove 504b is suctioned by vacuum through the vacuum passage 504a, thereby holding the substrate W by suctioning the peripheral edge thereof. I have.
[0031]
The oscillating arm 500 moves up and down via a vertically moving motor including a servo motor (not shown) and a ball screw, and turns (swings) via a turning motor (not shown). Note that a pneumatic actuator may be used instead of the motor.
[0032]
The cathode section 506 has a cathode electrode 512 divided into six in this example, and an annular sealing material 514 attached so as to cover the upper part of the cathode electrode 512. The sealing material 514 is configured such that its inner peripheral edge is inclined inward and downward, becomes gradually thinner, and its inner peripheral end hangs downward. As a result, when the substrate stage 504 is raised, the cathode electrode 512 is pressed against the peripheral edge of the substrate W held by the substrate stage 504 to conduct electricity, and at the same time, the inner peripheral end of the sealing material 514 is placed on the upper surface of the peripheral edge of the substrate W. To prevent the plating solution supplied to the upper surface (plated surface) of the substrate from seeping out from the edge of the substrate W, and to contaminate the cathode electrode 512 with the plating solution. Is prevented from doing so.
[0033]
In this example, the cathode portion 506 cannot rotate up and down and rotates integrally with the substrate stage 504. However, the cathode portion 506 can move up and down and the sealing material 514 is pressed against the surface to be plated of the substrate W when it is lowered. May be configured.
[0034]
The electrode head 502 has a rotating housing 520 and a vertically moving housing 522 which are concentrically arranged in a cylindrical shape with a bottom and open downward. The rotating housing 520 is fixed to the lower surface of a rotating body 524 attached to the free end of the swing arm 500, and is configured to rotate integrally with the rotating body 524. On the other hand, the up-down moving housing 522 is configured to be positioned inside the rotating housing 520 at the upper portion, rotate integrally with the rotating housing 520, and move up and down relatively. The vertically moving housing 522 closes the lower end opening with a porous body 528, thereby disposing a disk-shaped anode 526 therein, and forming an anode chamber 530 therein for introducing a plating solution Q for immersing the anode 526 therein. Sections are formed.
[0035]
In this example, the porous body 528 has a multilayer structure in which porous materials are laminated in three layers. That is, the porous body 528 is composed of a plating solution impregnating material 532 mainly serving to hold the plating solution, and a porous pad 534 attached to the lower surface of the plating solution impregnating material 532. Are composed of a lower layer pad 534a that directly contacts the substrate W and an upper layer pad 534b interposed between the lower layer pad 534a and the plating solution impregnating material 532. The plating solution impregnating material 532 and the upper pad 534b are located inside the vertically movable housing 522, and the lower pad 534a closes the lower end opening of the vertically movable housing 522.
[0036]
As described above, by forming the porous body 528 into a multilayer structure, for example, the porous pad 534 (lower layer pad 534a) in contact with the substrate is sufficiently flat to flatten the uneven surface on the surface to be plated of the substrate. It is possible to use one having properties.
[0037]
The lower pad 534a has a relatively high level of flatness on the surface (surface) in contact with the surface (plated surface) of the substrate W, has fine through holes through which the plating solution can pass, and at least the contact surface has an insulator or an insulating material. It must be formed of a highly volatile substance. The flatness required for the lower layer pad 534a is, for example, a maximum roughness (RMS) of about several tens μm or less.
[0038]
The fine through hole required for the lower layer pad 534a is preferably a round through hole in order to maintain flatness on the contact surface, and the diameter of the fine through hole and the number per unit area are plated. Although the optimum value differs depending on the film quality and the wiring pattern, it is preferable that both are small in order to improve the selectivity of plating growth in the concave portion. As the specific hole diameter and the number per unit area of the minute through holes, for example, minute through holes having a hole diameter of 30 μm or less, preferably 5 to 20 μm may be present at a porosity of 50% or less. .
[0039]
Further, the lower layer pad 534a preferably has a certain degree of hardness, for example, having a tensile strength of 5 to 100 kg / cm. ² , Bending elastic strength is 200 to 10000 kg / cm ² It is sufficient if it is on the order.
[0040]
The lower pad 534a is preferably made of a more hydrophilic material. For example, a material obtained by subjecting a material shown below to a hydrophilic treatment or polymerizing a hydrophilic group is used. Examples of such a material include porous polyethylene (PE), porous polypropylene (PP), porous polyamide, porous polycarbonate, and porous polyimide. Among them, porous PE, porous PP, porous polyamide, etc. are prepared by using fine powder of ultra-high molecular weight PE, PP, polyamide, etc. as a raw material, compacting it, and sintering it. (Manufactured by Mitsubishi Plastics, Inc.), Sunfine UF, Sunfine AQ (both manufactured by Asahi Kasei Corporation), and Spacy (manufactured by Spacey Chemical Co., Ltd.). The porous polycarbonate is prepared, for example, by penetrating a high-energy heavy metal (copper or the like) accelerated by an accelerator into a polycarbonate film and selectively etching a linear track (trajectory) generated thereby. Things.
[0041]
The lower layer pad 534a may be a surface (surface) that is in contact with the surface of the substrate W and has been flattened by compression, machining, or the like, whereby higher priority deposition can be expected in the microgrooves. .
[0042]
On the other hand, the plating solution impregnating material 532 is made of a porous ceramic such as alumina, SiC, mullite, zirconia, titania, cordierite, or a hard porous body such as a sintered body of polypropylene or polyethylene, or a composite of these. It is composed of cloth or non-woven fabric. For example, in the case of alumina ceramics, the pore diameter is 30 to 200 μm, in the case of SiC, the pore diameter is 30 μm or less, the porosity is 20 to 95%, the thickness is 1 to 20 mm, preferably 5 to 20 mm, more preferably 8 to 20 mm. Those having a size of about 15 mm are used. In this example, for example, a porous ceramic plate made of alumina having a porosity of 30% and an average pore diameter of 100 μm is used. And, by containing the plating solution inside this, that is, the porous ceramics plate itself is an insulator, but the plating solution penetrates into this inside complicatedly and follows a considerably long path in the thickness direction, It is configured to have an electric conductivity smaller than the electric conductivity of the plating solution.
[0043]
By arranging the plating solution impregnating material 532 in the anode chamber 530 and generating a large resistance by the plating solution impregnating material 532, the influence of the resistance of the copper layer 7 (see FIG. 1) can be ignored. In addition, the in-plane difference in current density due to the electric resistance of the surface of the substrate W can be reduced, and the in-plane uniformity of the plating film can be improved.
[0044]
The electrode head 502 includes a pressing mechanism configured to press the lower layer pad 534a against the surface (plated surface) of the substrate W held by the substrate stage 504 with an arbitrary pressure. In this example, the pressing mechanism includes an airbag 540. That is, in this example, a ring-shaped airbag (pressing mechanism) 540 is arranged between the lower surface of the ceiling wall of the rotating housing 520 and the upper surface of the ceiling wall of the vertically moving housing 522. It is connected to a pressurized fluid supply source (not shown) via a pressurized fluid introduction pipe 542.
[0045]
In this way, by pressing the inside of the airbag 540 with the pressure P in a state where the swing arm 500 is fixed at a predetermined position (process position) so as not to be able to move up and down, the surface of the substrate W held by the substrate stage 504 ( The lower pad 534a can be released from the lower pad 534a by pressing the lower pad 534a more uniformly on the surface to be plated with an arbitrary pressure and returning the pressure P to the atmospheric pressure.
[0046]
A vertically moving housing 522 is provided with a plating solution introducing tube 544 for introducing a plating solution into the inside thereof and a pressurized fluid introducing tube (not shown) for introducing a pressurized fluid therein. , A large number of pores 526a are provided. As a result, the plating solution Q is introduced into the anode chamber 530 from the plating solution introduction pipe 544, and pressurizes the inside of the anode chamber 530, so that the plating solution Q passes through the pores 526a of the anode 526 and the plating solution impregnated material 532 is removed. It reaches the upper surface, passes through the inside of the porous pad 534 (the upper pad 534b and the lower pad 534a) from inside, and reaches the upper surface of the substrate W held by the substrate stage 504.
[0047]
Note that the inside of the anode chamber 530 also contains a gas generated by a chemical reaction, so that the pressure may change. For this reason, the pressure in the anode chamber 530 is controlled to a certain set value by feedback control during the process.
[0048]
Here, for example, when copper plating is performed, the anode 526 is made of copper (phosphorus-containing copper) having a phosphorous content of 0.03 to 0.05% in order to suppress generation of slime. However, an insoluble metal such as platinum or titanium or an insoluble electrode obtained by plating platinum or the like on a metal may be used. It is preferable that Further, it may be in a net shape for ease of distribution of the plating solution.
Cathode electrode 512 is electrically connected to the cathode of plating power supply 550, and anode 526 is electrically connected to the anode of plating power supply 550, respectively.
[0049]
Next, an operation when plating is performed by the plating apparatus will be described. First, in a state where the substrate W is sucked and held on the upper surface of the substrate stage 504, the substrate stage 504 is raised to bring the peripheral portion of the substrate W into contact with the cathode electrode 512 so as to be in an energized state, and further raised. The sealing material 514 is pressed against the upper surface of the peripheral portion of the substrate W to seal the peripheral portion of the substrate W in a watertight manner.
[0050]
On the other hand, in the electrode head 502, a position (idling position) where the plating solution is replaced and bubbles are removed by performing idling, while the plating solution Q is held inside, a predetermined position (process position). ). That is, once the swing arm 500 is raised and further rotated, the electrode head 502 is positioned at a position immediately above the substrate stage 504, and then lowered to stop at a predetermined position (process position). Let it. Then, the inside of the anode chamber 530 is pressurized, and the plating solution Q held by the electrode head 502 is discharged from the lower surface of the porous pad 534. Next, pressurized air is introduced into the airbag 540 to press the lower pad 534a downward.
[0051]
In this state, the electrode head 502 and the substrate stage 504 are respectively rotated (rotated). Thus, when the surface roughness of the surface of the porous body 528 (lower pad 534a) or the porous body 528 (lower pad 534a) is pressed toward the surface to be plated of the substrate W, the porous body 528 (lower pad 534a) is pressed. As shown in FIG. 4, a gap S is locally generated between the porous body 528 (lower pad 534a) and the plating surface P of the substrate W due to undulation or warpage generated on the gap S. Even if the solution Q exists, the plating solution Q existing in the gap S is removed outward by the centrifugal force accompanying the rotation. As described above, by removing the plating solution Q, the entire surface of the porous body 528 (the lower layer pad 534a) can be uniformly pressed and adhered to the surface S to be plated of the substrate W.
[0052]
Note that, in this example, although the electrode head 502 and the substrate stage 504 are each rotated after pressing the lower layer pad 534a downward, pressurized air is introduced into the airbag 540, When the lower layer pad 534a is pressed downward, the electrode head 502 and the substrate stage 504 may be rotated in advance, and the rotation may be continued for a predetermined time after being pressed.
[0053]
Then, the plating solution Q existing in the gap S locally generated between the porous body 528 (lower pad 534a) and the surface P to be plated of the substrate W is removed, and the porous body 528 (lower pad 534a) is removed. After rotating the electrode head 502 and the substrate stage 504 for a time sufficient to uniformly press and adhere the entire surface to the surface S to be plated of the substrate W, the rotation is stopped.
[0054]
Next, the cathode electrode 512 is connected to the cathode of the plating power supply 550, and the anode 526 is connected to the anode of the plating power supply 550, thereby plating the surface of the substrate W to be plated. As described above, the lower layer pad 534a and the substrate W are pressed by pressing the lower layer pad 534a against the surface to be plated of the substrate W held by the substrate stage 504 with an arbitrary pressure and further increasing the adhesion between them. A plating film is formed inside the fine concave portion for wiring provided on the substrate by eliminating a gap between the portion (other than the pattern portion) other than the fine concave portion for wiring such as a wiring groove (trench) on the surface to be plated. Can be selectively precipitated.
[0055]
After the plating is continued for a predetermined time, the cathode electrode 512 and the anode 526 are disconnected from the plating power supply 550, the inside of the anode chamber 530 is returned to the atmospheric pressure, and the inside of the air bag 540 is returned to the atmospheric pressure. The pressing of the pad 534a against the substrate W is released. Then, the electrode head 502 is raised.
The above operation is repeated a predetermined number of times as necessary to form a copper layer 7 (see FIG. 1B) having a thickness sufficient to fill the fine recesses for wiring on the surface (plated surface) of the substrate W. After the film is formed, the electrode head 502 is turned to return to the original position (idling position).
[0056]
FIG. 5 shows a main part of a plating apparatus according to another embodiment of the present invention. The difference of this example from the example shown in FIG. 3 is that a piezoelectric vibrator 560 is attached to the substrate mounting portion on the upper surface of the substrate stage 504, and the substrate W mounted on the substrate stage 504 is mounted on the substrate W by the piezoelectric vibrator 560. The point is that a vertical vibration perpendicular to the surface to be plated of the substrate W is applied.
[0057]
In this example, as described above, after pressing the lower layer pad 534a toward the substrate W held by the substrate stage 504, the substrate W is vibrated up and down for a predetermined time via the piezoelectric vibrator 560, or At the time of attachment, the substrate W is vibrated in the vertical direction via the piezo vibrator 560 in advance, and the vibration is continued for a predetermined time even after the lower layer pad 534a is pressed, whereby, as shown in FIG. Even if a gap S is locally formed between the porous body 528 (lower layer pad 534a) and the surface P to be plated of the substrate W and the plating solution Q exists in the gap S, the plating solution Q exists in the gap S. The plating solution Q can be discharged outward with this vibration. In particular, as in this example, the plating surface is damaged by vibrating the substrate W in a direction perpendicular to the plating surface so that the porous body and the plating surface of the substrate do not slide against each other. Can be prevented. Further, by using the piezo vibrator 560 as the vibrator, the mechanism can be made compact.
[0058]
FIG. 6 shows a main part of a plating apparatus according to still another embodiment of the present invention. This example is different from the example shown in FIG. 3 in that a storage tank 504c for holding a liquid such as pure water is formed on the upper surface of the substrate stage 504, and the liquid in the storage tank 504c is formed inside the storage tank 504c. An ultrasonic oscillator 562 for applying ultrasonic waves to vibrate the liquid at a high frequency is provided.
[0059]
In this example, the storage tank 504c of the substrate stage 504 is filled with a liquid such as pure water, and the substrate W is suction-held on the upper surface of the substrate stage 504 in the same manner as described above. At this time, the substrate W held by the substrate stage 504 is brought into contact with the liquid in the storage tank 504c of the substrate stage 504. Then, after pressing the lower layer pad 534 a toward the substrate W held by the substrate stage 504, ultrasonic vibration is applied to the liquid in the storage tank 504 c of the substrate stage 504 via the ultrasonic oscillator 562. Then, the ultrasonic vibration of the liquid is transmitted to the substrate W to vibrate the substrate, and further transmitted from the plating solution Q to the porous body 528 to vibrate them. As a result, the plating solution Q present in the locally formed gap S between the porous body 528 (lower pad 534a) and the plating surface P of the substrate W is removed by the vibration in the same manner as described above. Can be excluded.
[0060]
As described above, when the lower layer pad 534a is pressed, ultrasonic vibration may be applied to the liquid in the storage tank 504c of the substrate stage 504 via the ultrasonic oscillator 562 in advance.
[0061]
FIG. 7 shows a main part of a plating apparatus according to still another embodiment of the present invention. The difference of this example from the example shown in FIG. 3 is that a pressure port 564 is attached to the top wall of a vertically movable housing 522 that defines the anode chamber 530, and the pressure control unit is connected to the pressure port 564 via an on-off valve 566. The point is that the vacuum pump 568 is connected.
[0062]
According to this example, by driving the vacuum pump 568 to evacuate the inside of the anode chamber 530 and setting the pressure in the anode chamber 530 to a pressure lower than the atmospheric pressure (negative pressure), as shown in FIG. The plating solution Q existing in the gap S between the porous body 528 (534a) and the surface P to be plated of the substrate W is sucked, and the plating solution Q passes through the inside of the porous body 528 (534a) and the anode chamber 530. The plating solution Q can be removed from the gap S by promoting the inflow into the inside.
The removal of the plating solution by suction is performed after the lower layer pad 534a is pressed toward the substrate W held by the substrate stage 504, or in advance when pressing the same, as in the above-described examples. It may be performed continuously during plating.
[0063]
7 shows an example in which a vacuum pump 568 is connected to the pressure port 564 via an on-off valve 566, but a pressure pump is connected in place of the vacuum pump 568, and a vertically moving housing is further provided. An exhaust port is provided in the anode chamber 530, and the plating solution Q in the anode chamber 530 and the porous liquid Q in the anode chamber 530 are further utilized by utilizing pressure oscillation caused by repeating pressurization of the inside of the anode chamber 530 by a pressure pump and depressurization by exhaust from the exhaust port. The body 528 may be vibrated.
[0064]
FIG. 9 shows a plating solution management and supply system for controlling the composition and temperature of the plating solution and supplying the plating solution to the plating apparatus 18. As shown in FIG. 9, a plating solution tray 600 for immersing the electrode head 502 of the plating apparatus 18 and performing idling is provided. The plating solution tray 600 is connected to a reservoir 604 via a plating solution discharge pipe 602. The plating solution discharged through the plating solution discharge pipe 602 enters the reservoir 604.
[0065]
Then, the plating solution that has entered the reservoir 604 enters the plating solution adjustment tank 608 as the pump 606 is driven. The plating solution adjusting tank 608 is provided with a temperature controller 610 and a plating solution analyzing unit 612 for taking out and analyzing a sample solution, and further, a component replenishing pipe 614 for replenishing components that are insufficient by the analysis of the plating solution analyzing unit 612. Is connected, and the plating solution in the plating solution adjustment tank 608 flows along the plating solution supply pipe 618 with the driving of the pump 616, passes through the filter 620, and is returned to the plating solution tray 600. It has become.
[0066]
As described above, the composition and temperature of the plating solution are adjusted to be constant in the plating solution adjusting tank 608, and the adjusted plating solution is supplied to the electrode head 502 of the plating apparatus 18 and held by the electrode head 502. A plating solution having a constant composition and temperature can always be supplied to the electrode head 502 of the plating apparatus 18.
[0067]
FIGS. 10 and 11 show an example of a cleaning / drying apparatus 20 for cleaning (rinsing) and drying a substrate. That is, the cleaning / drying device 20 is a device that first performs chemical cleaning and pure water cleaning (rinsing), and then completely drys the cleaned substrate W by rotating a spindle. A substrate stage 422 having a clamp mechanism 420 for gripping, and a substrate attaching / detaching elevating plate 424 for opening and closing the clamp mechanism 420 are provided.
[0068]
The substrate stage 422 is connected to an upper end of a spindle 426 that rotates at a high speed in response to driving of a spindle rotation motor (not shown). A cleaning cup 428 for preventing the processing liquid from scattering is arranged around the substrate W gripped by the clamp mechanism 420, and the cleaning cup 428 moves up and down with the operation of a cylinder (not shown). ing.
[0069]
Further, the cleaning / drying device 20 includes a chemical solution nozzle 430 that supplies a processing liquid to the surface of the substrate W gripped by the clamp mechanism 420, a plurality of pure water nozzles 432 that supplies pure water to the back surface of the substrate W, And a rotatable pencil-type cleaning sponge 434 disposed above the substrate W gripped by the clamp mechanism 420. The cleaning sponge 434 is attached to a free end of a swing arm 436 that can swing horizontally. In addition, a clean air inlet 438 for introducing clean air into the apparatus is provided above the cleaning / drying apparatus 20.
[0070]
In the cleaning / drying apparatus 20 having such a configuration, the processing liquid is supplied from the chemical solution nozzle 430 toward the cleaning sponge 434 while the substrate W is gripped and rotated by the clamp mechanism 420 and the rotation arm 436 is rotated. Meanwhile, the surface of the substrate W is cleaned by rubbing the cleaning sponge 434 on the surface of the substrate W. Then, pure water is supplied to the back surface of the substrate W from the nozzle 432 for pure water, and the back surface of the substrate W is also washed (rinsed) with the pure water injected from the nozzle 432 for pure water. The substrate W thus cleaned is spin-dried by rotating the spindle 426 at high speed.
[0071]
FIG. 12 shows an example of the bevel etching / back surface cleaning device 22. The bevel etching / back surface cleaning device 22 simultaneously etches and cleans the back surface of the copper layer 7 (see FIG. 1) attached to the edge (bevel) portion of the substrate, and furthermore, removes the copper in the circuit forming portion provided on the substrate surface. The structure is such that the growth of a natural oxide film is suppressed. The substrate W is positioned inside the bottomed cylindrical waterproof cover 920 and the spin chuck 921 is used to face up the substrate W at a plurality of locations along the circumferential direction of the peripheral edge thereof. A substrate stage 922 held horizontally and rotated at a high speed, a center nozzle 924 arranged above a substantially central portion on the front side of the substrate W held by the substrate stage 922, and arranged above a peripheral edge of the substrate W Edge nozzle 926. The center nozzle 924 and the edge nozzle 926 are respectively arranged facing downward. Further, a back nozzle 928 is arranged upward at a position substantially below the central portion on the back surface side of the substrate W. The edge nozzle 926 is configured to be movable in the diameter direction and the height direction of the substrate W.
[0072]
The moving width L of the edge nozzle 926 can be arbitrarily determined from the outer peripheral end surface of the substrate toward the center thereof. Normally, the edge cut width C is set in the range of 2 mm to 5 mm. If the amount of liquid flowing from the back surface to the front surface is equal to or higher than the rotation speed at which no problem occurs, the copper layer and the like within the set cut width C are removed. can do.
[0073]
Next, a cleaning method using the bevel etching / back surface cleaning device 22 will be described. First, the substrate W is horizontally rotated integrally with the substrate stage 922 while the substrate is held horizontally by the substrate stage 922 via the spin chuck 921. In this state, the acid solution is supplied from the center nozzle 924 to the central portion on the front side of the substrate W. The acid solution may be any non-oxidizing acid, such as hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, oxalic acid and the like. On the other hand, the oxidant solution is continuously or intermittently supplied from the edge nozzle 926 to the peripheral portion of the substrate W. As the oxidant solution, any one of ozone water, hydrogen peroxide solution, nitric acid solution, sodium hypochlorite solution or the like is used, or a combination thereof is used.
[0074]
Accordingly, in the region of the edge cut width C at the peripheral portion of the substrate W, the copper layer or the like formed on the upper surface and the end surface is rapidly oxidized by the oxidizing agent solution, and is simultaneously supplied from the center nozzle 924 to cover the entire surface of the substrate. It is etched and dissolved and removed by the spreading acid solution. As described above, by mixing the acid solution and the oxidizing agent solution at the periphery of the substrate, it is possible to obtain a sharper etching profile than when the mixed water is supplied in advance from a nozzle. At this time, the etching rate of copper is determined by those concentrations. Further, when a natural oxide film of copper is formed on the circuit forming portion on the surface of the substrate, the natural oxide is immediately removed by an acid solution which spreads over the entire surface of the substrate with the rotation of the substrate and grows. Never. After the supply of the acid solution from the center nozzle 924 is stopped, the supply of the oxidant solution from the edge nozzle 926 is stopped, thereby oxidizing the silicon exposed on the surface and suppressing the adhesion of copper. be able to.
[0075]
On the other hand, an oxidizing agent solution and a silicon oxide film etching agent are simultaneously or alternately supplied from the back nozzle 928 to the center of the back surface of the substrate. Thus, copper or the like adhering to the rear surface of the substrate W in a metal form can be removed together with the silicon of the substrate by oxidizing with an oxidizing agent solution and etching with a silicon oxide film etching agent. It is preferable to use the same oxidant solution as the oxidant solution supplied to the surface in order to reduce the number of chemicals. Also, hydrofluoric acid can be used as the silicon oxide film etching agent, and the use of hydrofluoric acid in the acid solution on the surface of the substrate can reduce the number of chemicals. Thus, if the supply of the oxidant is stopped first, a hydrophobic surface is obtained, and if the etchant solution is stopped first, a saturated surface (hydrophilic surface) is obtained, and the back surface is adjusted to meet the requirements of the subsequent process. You can also.
[0076]
After the acid solution, that is, the etching solution is supplied to the substrate to remove metal ions remaining on the surface of the substrate W, pure water is further supplied, the pure water is replaced, and the etching solution is removed. And spin drying. In this manner, the removal of the copper layer within the edge cut width C at the peripheral portion of the substrate surface and the removal of copper contamination on the back surface are simultaneously performed, and this processing can be completed within, for example, 80 seconds. Although the edge cut width of the edge can be set arbitrarily (2 mm to 5 mm), the time required for etching does not depend on the cut width.
[0077]
13 and 14 show a heat treatment (annealing) device 26. FIG. The heat treatment apparatus 26 is located inside a chamber 1002 having a gate 1000 for taking in and out the substrate W, and cools the substrate W by flowing a hot plate 1004 for heating the substrate W to, for example, 400 ° C., and cooling water, for example. Cool plates 1006 are arranged vertically. In addition, a plurality of elevating pins 1008 that extend vertically through the inside of the cool plate 1006 and that mount and hold the substrate W are arranged at the upper end so as to be able to move up and down. Further, a gas introduction pipe 1010 for introducing a gas for preventing oxidation between the substrate W and the hot plate 1004 during annealing, and a gas introduced from the gas introduction pipe 1010 and flowing between the substrate W and the hot plate 1004 Gas exhaust pipes 1012 for exhausting gas are arranged at positions facing each other with the hot plate 1004 interposed therebetween.
[0078]
The gas introduction pipe 1010 has a filter 1014a inside. ₂ N flowing in gas introduction passage 1016 ₂ H with gas and filter 1014b inside ₂ H flowing in the gas introduction passage 1018 ₂ The gas is mixed with a mixer 1020 and connected to a mixed gas introduction path 1022 through which the mixed gas flows.
[0079]
Thus, the substrate W carried into the chamber 1002 through the gate 1000 is held by the elevating pins 1008, and the distance between the substrate W holding the elevating pins 1008 by the elevating pins 1008 and the hot plate 1004 is, for example, 0.1 to 0.1. Raise it to about 1.0 mm. In this state, the substrate W is heated via the hot plate 1004 to, for example, 400 ° C., and at the same time, a gas for preventing oxidation is introduced from the gas introduction pipe 1010 to flow between the substrate W and the hot plate 1004. Exhaust from the gas exhaust pipe 1012. In this way, the substrate W is annealed while preventing oxidation, and this annealing is continued, for example, for about several tens to 60 seconds, and the annealing is completed. The heating temperature of the substrate is selected from 100 to 600C.
[0080]
After the annealing, the lifting pins 1008 are lowered until the distance between the substrate W held by the lifting pins 1008 and the cool plate 1006 becomes, for example, about 0 to 0.5 mm. In this state, the substrate is cooled by introducing cooling water into the cool plate 1006 until the temperature of the substrate W becomes 100 ° C. or lower, for example, for about 10 to 60 seconds. Transport to
In this example, N 2 is used as an antioxidant gas. ₂ Gas and a few% of H ₂ Although a mixed gas that is a mixture of gases is made to flow, ₂ You may make it flow only gas.
[0081]
FIGS. 15 to 21 show a pretreatment device 28 that performs pretreatment of electroless plating of a substrate. The pre-processing device 28 includes a fixed frame 52 attached to an upper portion of a frame 50, and a moving frame 54 that moves up and down relative to the fixed frame 52. The moving frame 54 opens downward. A processing head 60 having a bottomed cylindrical housing portion 56 and a substrate holder 58 is suspended and supported. That is, the head rotating servomotor 62 is attached to the moving frame 54, and the housing 56 of the processing head 60 is connected to the lower end of the output shaft (hollow shaft) 64 extending below the servomotor 62.
[0082]
As shown in FIG. 18, a vertical shaft 68 that rotates integrally with the output shaft 64 is inserted into the output shaft 64 via a spline 66, and a ball joint 70 is attached to a lower end of the vertical shaft 68. The substrate holder 58 of the processing head 60 is connected through the intermediary of the processing head 60. The substrate holder 58 is located inside the housing portion 56. The upper end of the vertical shaft 68 is connected via a bearing 72 and a bracket to a fixed ring elevating cylinder 74 fixed to the moving frame 54. Thus, the vertical shaft 68 moves up and down independently of the output shaft 64 with the operation of the lifting cylinder 74.
[0083]
A linear guide 76 is attached to the fixed frame 52 and extends vertically to guide the moving frame 54 up and down. The moving frame 54 is moved along with the operation of a head elevating cylinder (not shown). The ascending and descending is carried out by using 76 as a guide.
[0084]
On the peripheral wall of the housing portion 56 of the processing head 60, a substrate insertion window 56a into which the substrate W is inserted is provided. As shown in FIGS. 19 and 20, a lower edge of the housing section 56 of the processing head 60 is sandwiched between a main frame 80 made of, for example, PEEK and a guide frame 82 made of, for example, polyethylene. A seal ring 84a is provided. The seal ring 84a comes into contact with the peripheral portion of the lower surface of the substrate W and seals the peripheral portion.
[0085]
On the other hand, a substrate fixing ring 86 is fixed to the peripheral edge of the lower surface of the substrate holder 58, and a cylindrical pusher 90 is pressed by the elastic force of a spring 88 disposed inside the substrate fixing ring 86 of the substrate holder 58. It projects downward from the lower surface of the fixing ring 86. Further, between the upper surface of the substrate holder 58 and the upper wall portion of the housing portion 56, a bendable cylindrical bellows plate 92 made of, for example, Teflon (registered trademark) and bendable, which hermetically seals the inside, is disposed. I have.
[0086]
Thus, the substrate W is inserted into the housing portion 56 through the substrate insertion window 56a with the substrate holder 58 raised. Then, the substrate W is guided by the tapered surface 82a provided on the inner peripheral surface of the guide frame 82, positioned and mounted at a predetermined position on the upper surface of the seal ring 84a. In this state, the substrate holder 58 is lowered, and the pusher 90 of the substrate fixing ring 86 is brought into contact with the upper surface of the substrate W. By further lowering the substrate holder 58, the substrate W is pressed downward by the elastic force of the spring 88, whereby the substrate W is pressed against the peripheral portion of the surface (lower surface) of the substrate W by the seal ring 84a, and the substrate W is sealed. Then, the substrate W is held between the housing portion 56 and the substrate holder 58 while being held therebetween.
[0087]
When the head rotating servomotor 62 is driven while the substrate W is held by the substrate holder 58, the output shaft 64 and the vertical shaft 68 inserted inside the output shaft 64 form the spline 66. The housing unit 56 and the substrate holder 58 also rotate integrally.
[0088]
A processing tank 100 having an outer tank 100a and an inner tank 100b which is located below the processing head 60 and has an inner diameter slightly larger than the outer diameter of the processing head 60 and is open upward is provided. A pair of legs 104 attached to the lid 102 is rotatably supported on the outer periphery of the processing tank 100. Further, a crank 106 is integrally connected to the leg 104, and a free end of the crank 106 is rotatably connected to a rod 110 of a cylinder 108 for moving the lid. Thereby, with the operation of the lid moving cylinder 108, the lid 102 is configured to move between the processing position covering the upper end opening of the processing tank 100 and the side retract position. . On the surface (upper surface) of the lid 102, a nozzle plate 112 having a large number of injection nozzles 112a for injecting, for example, electrolytic ionized water having a reducing power outward (upward) is provided as described below. I have.
[0089]
Further, as shown in FIG. 21, inside the inner tank 100 b of the processing tank 100, a plurality of injection nozzles 124 a that inject the chemical supplied from the chemical tank 120 along with the driving of the chemical pump 122 upward are formed. The nozzle plate 124 is disposed in a state where the injection nozzles 124a are more evenly distributed over the entire cross section of the inner tank 100b. A drain pipe 126 for discharging a chemical solution (drained liquid) to the outside is connected to the bottom surface of the inner tank 100b. A three-way valve 128 is interposed in the middle of the drain pipe 126, and this chemical solution (drain liquid) is supplied as necessary through a return pipe 130 connected to one outlet port of the three-way valve 128. It can be returned to the tank 120 and reused. Further, in this example, the nozzle plate 112 provided on the surface (upper surface) of the lid 102 is connected to a rinse liquid supply source 132 that supplies a rinse liquid such as pure water. A drain pipe 127 is also connected to the bottom of the outer tub 100a.
[0090]
As a result, the processing head 60 holding the substrate is lowered to cover the opening at the upper end of the processing bath 100 with the processing head 60, and in this state, the nozzle plate disposed inside the inner bath 100b of the processing bath 100 By spraying the chemical toward the substrate W from the injection nozzle 124a of 124, the chemical is uniformly sprayed over the entire lower surface (processed surface) of the substrate W, and while preventing the chemical from scattering outside. Can be discharged from the drain pipe 126 to the outside. Further, the processing head 60 is raised, and the upper end opening of the processing tank 100 is closed with the lid 102, and the nozzle plate 112 is disposed on the upper surface of the lid 102 toward the substrate W held by the processing head 60. By rinsing the rinsing liquid from the injection nozzle 112a, rinsing processing (cleaning processing) of the chemical liquid remaining on the substrate surface is performed, and the rinsing liquid passes between the outer tank 100a and the inner tank 100b, and flows through the drain pipe 127. Since it is discharged through the inner tank 100b, it is prevented from flowing into the inside of the inner tank 100b, so that the rinsing liquid does not mix with the chemical liquid.
[0091]
According to the pre-processing device 28, as shown in FIG. 15, the substrate W is inserted and held inside the processing head 60 in a state where the processing head 60 is raised, and thereafter, as shown in FIG. 60 is lowered to a position where the upper end opening of the processing tank 100 is covered. Then, by rotating the processing head 60 and rotating the substrate W held by the processing head 60, a chemical solution is sprayed toward the substrate W from the spray nozzle 124a of the nozzle plate 124 disposed inside the processing bath 100. The chemical solution is uniformly sprayed over the entire surface of the substrate W. Further, the processing head 60 is raised and stopped at a predetermined position, and the lid 102 at the retreat position is moved to a position covering the upper end opening of the processing tank 100 as shown in FIG. Then, in this state, the rinsing liquid is ejected from the ejection nozzles 112a of the nozzle plate 112 arranged on the upper surface of the lid 102 toward the substrate W held and rotated by the processing head 60. Thereby, the processing of the substrate W with the chemical liquid and the rinsing processing with the rinsing liquid can be performed while the two liquids are not mixed.
[0092]
By adjusting the lowering position of the processing head 60 and adjusting the distance between the substrate W held by the processing head 60 and the nozzle plate 124, the chemical liquid ejected from the ejection nozzle 124 a of the nozzle plate 124 And the injection pressure can be arbitrarily adjusted. Here, when a pretreatment liquid such as a chemical is circulated and used, the effective component decreases with the treatment, and the pretreatment liquid (chemical) is taken out by adhering to the substrate. It is preferable to provide a pretreatment liquid management unit (not shown) for analyzing the water content and adding a shortage. Specifically, since the chemical used for cleaning is mainly composed of an acid or an alkali, the pH is measured, for example, and a decrease is supplied from a difference from a predetermined value. Can supply the reduced amount. For the catalyst solution, for example, in the case of an acidic palladium solution, the amount of acid can be measured by pH, and the amount of palladium can be measured by titration or turbidimetry, and a reduced amount can be supplied in the same manner. .
[0093]
FIGS. 22 to 28 show an electroless plating apparatus 30. FIG. This electroless plating apparatus 30 is for forming the protective film 9 shown in FIG. 1D, and includes a plating tank 200 (see FIGS. 26 and 28) and a substrate disposed above the plating tank 200. It has a substrate head 204 that detachably holds W.
[0094]
As shown in detail in FIG. 22, the substrate head 204 has a housing portion 230 and a head portion 232, and the head portion 232 mainly includes a suction head 234 and a substrate receiver 236 surrounding the periphery of the suction head 234. Is configured. A substrate rotation motor 238 and a substrate receiving drive cylinder 240 are housed inside the housing portion 230. The upper end of the output shaft (hollow shaft) 242 of the substrate rotation motor 238 is connected to the rotary joint 244, and the lower end is connected to the rotary joint 244. The rod of the substrate receiving drive cylinder 240 is connected to the suction head 234 of the head 232, and the substrate receiving 236 of the head 232. Further, a stopper 246 for mechanically restricting the elevation of the board receiver 236 is provided inside the housing portion 230.
[0095]
Here, a similar spline structure is employed between the suction head 234 and the substrate receiver 236, and the substrate receiver 236 moves up and down relatively with the suction head 234 with the operation of the substrate receiving drive cylinder 240. When the output shaft 242 is rotated by the driving of the substrate rotation motor 238, the suction head 234 and the substrate receiver 236 are integrally rotated with the rotation of the output shaft 242.
[0096]
As shown in detail in FIGS. 23 to 25, a suction ring 250 for holding the substrate W by suction is attached to a peripheral portion of the lower surface of the suction head 234 via a pressing ring 251. The concave portion 250a provided continuously on the lower surface of the suction ring 250 and the vacuum line 252 extending inside the suction head 234 communicate with each other via a communication hole 250b provided in the suction ring 250. Thus, the substrate W is sucked and held by evacuating the concave portion 250a. In this manner, the substrate W is held by being evacuated to a small width (in the radial direction) in a circular shape. By minimizing the effect of the vacuum on the substrate W (such as bending) and immersing the suction ring 250 in a plating solution (processing solution), not only the surface (lower surface) of the substrate W but also the edges It can be immersed in the plating solution. The release of the substrate W is performed by connecting the vacuum line 252 with N ₂ Is supplied.
[0097]
On the other hand, the substrate receiver 236 is formed in a cylindrical shape with a bottom and opened downward, a peripheral wall of which is provided with a substrate insertion window 236a for inserting the substrate W therein, and a disk protruding inward at a lower end. A claw portion 254 is provided. Further, a projection 256 having a tapered surface 256a on the inner peripheral surface serving as a guide for the substrate W is provided on an upper portion of the claw portion 254.
[0098]
Thereby, as shown in FIG. 23, the substrate W is inserted into the substrate receiver 236 from the substrate insertion window 236a with the substrate receiver 236 lowered. Then, the substrate W is guided by the tapered surface 256a of the protruding piece 256, positioned and held at a predetermined position on the upper surface of the claw portion 254. In this state, the substrate receiver 236 is raised, and as shown in FIG. 24, the upper surface of the substrate W placed and held on the claw portion 254 of the substrate receiver 236 is brought into contact with the suction ring 250 of the suction head 234. Next, the concave portion 250a of the suction ring 250 is evacuated through the vacuum line 252, thereby holding the substrate W by suction while sealing the peripheral edge of the upper surface of the substrate W to the lower surface of the suction ring 250. Then, when performing the plating process, as shown in FIG. 25, the substrate receiver 236 is lowered by several mm, the substrate W is separated from the claw portion 254, and a state in which the substrate W is sucked and held only by the suction ring 250. Thus, it is possible to prevent the peripheral edge of the surface (lower surface) of the substrate W from being no longer plated due to the presence of the claw portion 254.
[0099]
FIG. 26 shows details of the plating tank 200. The plating tank 200 has a bottom connected to a plating solution supply pipe 308 (see FIG. 28), and a plating solution recovery groove 260 provided in a peripheral wall portion. Inside the plating tank 200, two rectifying plates 262, 264 for stabilizing the flow of the plating liquid flowing upward therethrough are arranged, and further, at the bottom, the plating liquid introduced into the plating tank 200. A temperature measuring device 266 for measuring the temperature of the liquid is provided. Further, the pH of the plating bath 200 is set slightly above the level of the plating solution held in the plating bath 200 on the outer peripheral surface of the peripheral wall of the plating bath 200, and slightly upward in the diameter direction. An injection nozzle 268 for injecting a stop solution composed of a neutral liquid, for example, pure water, is provided. Thus, after the plating is completed, the substrate W held by the head unit 232 is pulled up slightly above the level of the plating solution and temporarily stopped, and in this state, pure water (stop solution) is sprayed from the injection nozzle 268 toward the substrate W. To immediately cool the substrate W, thereby preventing the plating solution remaining on the substrate W from progressing the plating.
[0100]
Furthermore, when the plating process such as idling is not performed on the upper opening of the plating tank 200, the upper opening of the plating tank 200 is closed to prevent unnecessary evaporation of the plating solution from the plating tank 200. A plating tank cover 270 is provided to be freely opened and closed.
[0101]
As shown in FIG. 28, the plating tank 200 extends from a plating solution storage tank 302 at the bottom, and is connected to a plating solution supply pipe 308 provided with a plating solution supply pump 304 and a three-way valve 306 on the way. Thereby, during the plating process, the plating solution is supplied from the bottom into the plating tank 200 and the overflowing plating solution is collected from the plating solution collecting groove 260 into the plating solution storage tank 302, so that the plating solution is Can be circulated. A plating solution return pipe 312 returning to the plating solution storage tank 302 is connected to one outlet port of the three-way valve 306. Thereby, the plating solution can be circulated even during the standby time of the plating, thereby forming a plating solution circulation system. As described above, by constantly circulating the plating solution in the plating solution storage tank 302 through the plating solution circulation system, the rate of decrease in the concentration of the plating solution is reduced as compared with the case where the plating solution is simply stored, The number of substrates W that can be processed can be increased.
[0102]
In particular, in this example, by controlling the plating solution supply pump 304, the flow rate of the plating solution circulating during the plating standby and during the plating process can be individually set. That is, the circulating flow rate of the plating solution at the time of the plating standby is, for example, 2 to 20 L / min, and the circulating flow rate of the plating solution at the time of the plating treatment is set at, for example, 0 to 10 L / min. As a result, a large circulation flow rate of the plating solution is secured during the standby time of the plating, and the temperature of the plating bath in the cell is maintained at a constant temperature. A protective film (plating film) can be formed.
[0103]
A temperature measuring device 266 provided near the bottom of the plating tank 200 measures the temperature of the plating solution introduced into the plating tank 200 and, based on the measurement result, a heater 316 and a flow meter 318 described below. Control.
[0104]
That is, in this example, the heat exchanger 320 is installed in the plating solution in the plating solution storage tank 302 by using water that has been heated using a separate heater 316 and passed through the flow meter 318 as a heat medium. A heating device 322 for indirectly heating the plating solution and a stirring pump 324 for circulating and stirring the plating solution in the plating solution storage tank 302 are provided. This is because the plating solution may be used at a high temperature (approximately 80 ° C.) in plating, which is used to cope with this. According to this method, the plating solution is much more expensive than the in-line heating method. It is possible to prevent unwanted substances and the like from being mixed into the delicate plating solution.
[0105]
FIG. 27 shows the details of the cleaning tank 202 attached to the side of the plating tank 200. A plurality of spray nozzles 280 for spraying a rinsing liquid such as pure water upward are attached to a nozzle plate 282 at the bottom of the cleaning tank 202, and the nozzle plate 282 is provided at the upper end of a nozzle vertical shaft 284. It is connected to. Further, the nozzle vertical shaft 284 moves up and down by changing the screw position of the screw 287 for adjusting the nozzle position and the nut 288 screwed with the screw 287, whereby the ejection nozzle 280 and the ejection nozzle 280 are moved. The distance to the substrate W arranged above can be adjusted optimally.
[0106]
Further, the cleaning liquid such as pure water is sprayed toward the inside of the cleaning tank 202 in a direction slightly obliquely downward in the diametric direction, being located above the spray nozzle 280 on the outer peripheral surface of the peripheral wall of the cleaning tank 202, and A head cleaning nozzle 286 that sprays a cleaning liquid on at least a portion of the part 232 that is in contact with the plating liquid is provided.
[0107]
In the cleaning tank 202, the substrate W held by the head portion 232 of the substrate head 204 is arranged at a predetermined position in the cleaning tank 202, and a cleaning liquid (rinse liquid) such as pure water is injected from an injection nozzle 280. At this time, a cleaning liquid such as pure water is simultaneously jetted from the head cleaning nozzle 286 to clean at least a portion of the head portion 232 of the substrate head 204 which comes into contact with the plating solution. By cleaning with a cleaning solution, it is possible to prevent deposits from accumulating in portions immersed in the plating solution.
[0108]
In the electroless plating apparatus 30, the substrate W is sucked and held by the head portion 232 of the substrate head 204 at the position where the substrate head 204 is raised, and the plating solution in the plating tank 200 is circulated as described above. Let it be.
Then, when performing the plating process, the plating tank cover 270 of the plating tank 200 is opened, the substrate head 204 is lowered while rotating, and the substrate W held by the head unit 232 is immersed in the plating solution in the plating tank 200.
[0109]
Then, after the substrate W is immersed in the plating solution for a predetermined time, the substrate head 204 is raised, and the substrate W is pulled up from the plating solution in the plating tank 200. If necessary, the substrate W is placed on the substrate W as described above. The substrate W is immediately cooled by spraying pure water (stop liquid) from the spray nozzle 268 toward the nozzle, and further, the substrate head 204 is lifted to raise the substrate W to a position above the plating tank 200, and the rotation of the substrate head 204 is stopped. Stop.
[0110]
Next, the substrate head 204 is moved to a position immediately above the cleaning tank 202 while holding the substrate W by the head unit 232 of the substrate head 204 by suction. Then, the substrate W is lowered to a predetermined position in the cleaning tank 202 while rotating the substrate head 204, and a cleaning liquid (rinse liquid) such as pure water is injected from the injection nozzle 280 to wash (rinse) the substrate W. A cleaning liquid such as pure water is sprayed from the cleaning nozzle 286 to clean at least a portion of the head portion 232 of the substrate head 204 that comes into contact with the plating liquid with the cleaning liquid.
[0111]
After the cleaning of the substrate W is completed, the rotation of the substrate head 204 is stopped, the substrate head 204 is raised, the substrate W is pulled up to a position above the cleaning tank 202, and the substrate head 204 is transferred to the transfer robot 16 at a transfer position. The substrate W is transferred to the transfer robot 16 and transferred to the next process.
[0112]
As shown in FIG. 28, the electroless plating apparatus 30 measures the amount of the plating solution held by the electroless plating apparatus 30 and, for example, measures the plating solution by an absorption spectrophotometric method, a titration method, an electrochemical measurement, or the like. A plating solution management unit 330 for analyzing the composition of the plating solution and replenishing the insufficient components in the plating solution is provided. A signal processing is performed on these analysis results to supply a deficient component in the plating solution from a replenishing tank (not shown) to the plating solution storage tank 302 using a metering pump or the like so as to manage the amount and composition of the plating solution. Accordingly, thin-film plating can be realized with good reproducibility.
[0113]
The plating solution management unit 330 has a dissolved oxygen concentration meter 332 for measuring the dissolved oxygen of the plating solution held by the electroless plating apparatus 30 by, for example, an electrochemical method. According to the instruction, the concentration of dissolved oxygen in the plating solution can be controlled to a constant level by, for example, degassing, blowing nitrogen, or the like. As described above, by controlling the concentration of dissolved oxygen in the plating solution to be constant, the plating reaction can be realized with good reproducibility.
[0114]
When the plating solution is repeatedly used, a specific component may be accumulated by being brought in from the outside or decomposing by itself, which may lead to deterioration in reproducibility of plating and film quality. By adding a mechanism for selectively removing such a specific component, it is possible to extend the liquid life and improve reproducibility.
[0115]
FIG. 29 shows an example of a polishing apparatus (CMP apparatus) 32. The polishing apparatus 32 includes a polishing table 822 that forms a polishing surface by attaching a polishing cloth (polishing pad) 820 to the upper surface, and a top ring 824 that holds the substrate W with the surface to be polished facing the polishing table 822. Have. Then, the polishing table 822 and the top ring 824 are respectively rotated, and while the polishing liquid is supplied from a polishing liquid nozzle 826 provided above the polishing table 822, the substrate W is fixed at a constant pressure by the top ring 824. Is pressed against the polishing pad 820 to polish the surface of the substrate W. Note that a polishing pad that employs a fixed abrasive method in which abrasive particles are previously placed may be used as the polishing pad.
[0116]
When the polishing operation is continued using such a CMP apparatus 32, the polishing power of the polishing surface of the polishing pad 820 decreases. However, in order to recover the polishing power, a dresser 828 is provided, and the substrate to be polished is formed by the dresser 828. The dressing of the polishing pad 820 is performed at the time of replacing W or the like. In this dressing process, the dressing surface (dressing member) of the dresser 828 is pressed against the polishing cloth 820 of the polishing table 822 and is rotated, thereby removing the abrasive fluid and the cutting debris attached to the polishing surface, The polished surface is flattened and dressed, and the polished surface is regenerated. Further, a monitor for monitoring the state of the surface of the substrate may be attached to the polishing table 822 to detect the end point (end point) of polishing on the spot (In-situ), or the substrate may be detected on the spot (In-situ). A monitor for inspecting the finished state of the camera may be attached.
[0117]
30 and 31 show a film thickness measuring device 24 provided with a reversing machine. As shown in the figure, the film thickness measuring device 24 includes a reversing device 339, and the reversing device 339 includes reversing arms 353 and 353. The reversing arms 353 and 353 have a function of sandwiching and holding the outer periphery of the substrate W from both left and right sides thereof and reversing the substrate W by rotating it by 180 °. Then, a circular mounting table 355 is installed immediately below the reversing arms 353 and 353 (reversing stage), and a plurality of film thickness sensors S are mounted on the mounting table 355. The mounting base 355 is configured to be vertically movable by a driving mechanism 357.
[0118]
At the time of reversing the substrate W, the mounting base 355 waits at the position indicated by the solid line below the substrate W, and moves up or to the position shown by the dotted line before or after the reversal to move the film thickness sensor S to the reversing arms 353 and 353. The substrate is brought close to the gripped substrate W, and its thickness is measured.
[0119]
According to this example, since there is no restriction such as an arm of the transfer robot, the film thickness sensor S can be installed at an arbitrary position on the mounting table 355. Further, since the mounting base 355 is configured to be vertically movable, it is also possible to adjust the distance between the substrate W and the sensor during measurement. Further, it is also possible to mount a plurality of types of sensors according to the detection purpose and change the distance between the substrate W and each sensor for each measurement of each sensor. However, since the mounting base 355 moves up and down, a certain measurement time is required.
[0120]
Here, as the film thickness sensor S, for example, an eddy current sensor is used. The eddy current sensor generates an eddy current, conducts the substrate W, detects the frequency and loss of the returned current, and measures the film thickness, and is used in a non-contact manner. Further, as the film thickness sensor S, an optical sensor is also suitable. The optical sensor irradiates the sample with light and can directly measure the film thickness from the information of the reflected light.It can measure not only metal films but also insulating films such as oxide films. It is. The installation position of the film thickness sensor S is not limited to the one shown in the figure, and an arbitrary number is attached to a position to be measured.
[0121]
Next, a series of processes for forming copper wiring on the substrate on which the seed layer 6 is formed, as shown in FIG. 1A, by the substrate processing apparatus having the above-described configuration will be described with reference to FIG.
[0122]
First, the substrates W having the seed layer 6 formed on the surface are taken out one by one from the transport box 10 and loaded into the load / unload station 14. Then, the substrate W carried into the loading / unloading station 14 is transferred to the film thickness measuring device 24 by the transfer robot 16, and the initial film thickness (the film thickness of the seed layer 6) is measured by the film thickness measuring device 24. Thereafter, if necessary, the substrate is turned over and transported to the plating apparatus 18, where the copper layer 7 is deposited on the surface of the substrate W as shown in FIG. Is embedded.
[0123]
Then, the substrate on which the copper layer 7 is formed is transported to the cleaning / drying device 20 by the transport robot 16 and the substrate W is washed with pure water and spin-dried, or the plating device 18 has a spin-drying function. If provided, the substrate W is spin-dried (liquid drainage) by the plating apparatus 18 and the dried substrate is conveyed to the bevel etching / back surface cleaning apparatus 22.
[0124]
In the bevel etching / back surface cleaning device 22, unnecessary copper adhered to the bevel (edge) portion of the substrate W is removed by etching, and at the same time, the back surface of the substrate is cleaned with pure water or the like. The substrate W is transported to the cleaning / drying device 20 by the robot 16 and the substrate W is cleaned with pure water and spin-dried, or when the bevel etching / back surface cleaning device 22 has a spin-drying function, The substrate W is spin-dried by the bevel etching / backside cleaning device 22, and the dried substrate is transferred to the heat treatment device 26 by the transfer robot 16.
[0125]
The heat treatment apparatus 26 performs heat treatment (annealing) of the substrate W. Then, the substrate W after the heat treatment is transferred to the film thickness measuring device 24 by the transfer robot 16, where the copper film thickness is measured. From the difference between the measurement result and the above-described measurement result of the initial film thickness, the copper W is measured. The film thickness of the layer 7 (see FIG. 1 (b)) is obtained, and the plating time for the substrate is adjusted, for example, according to the measured film thickness. Perform additional film formation. Then, the substrate W after the thickness measurement is transferred to the polishing device 32 by the transfer robot 16.
[0126]
As shown in FIG. 1C, the unnecessary copper layer 7 and the seed layer 6 deposited on the surface of the substrate W are polished and removed by the polishing apparatus 32 to planarize the surface of the substrate W. At this time, for example, the film thickness and the finished condition of the substrate are inspected by a monitor, and when the monitor detects an end point (end point), the polishing is finished. Then, the polished substrate W is transported to the cleaning / drying device 20 by the transport robot 16, and the substrate surface is cleaned by the cleaning / drying device 20 with a chemical solution, further rinsed with pure water (rinse), and then rotated at high speed. And spin dry. Then, the substrate W after the spin drying is transferred to the pretreatment device 28 by the transfer robot 16.
[0127]
In this pretreatment device 28, at least one plating pretreatment such as attachment of a Pd catalyst to the substrate surface or removal of an oxide film attached to the exposed surface of the substrate is performed. Then, the substrate after the plating pretreatment is transferred to the cleaning / drying device 20 by the transfer robot 16 as described above, and the substrate W is washed with pure water and spin-dried. If the substrate W has a spin drying function, the substrate W is spin-dried (liquid drainage) by the pre-processing device 28 and the dried substrate is transferred to the electroless plating device 30 by the transfer robot 16. .
[0128]
As shown in FIG. 1D, the surface of the exposed wiring 8 is subjected to, for example, electroless Co-WP plating, and the exposed surface of the wiring 8 is exposed to Co. A wiring 8 is protected by selectively forming a protective film (plating film) 9 made of a -WP alloy film. The thickness of the protective film 9 is about 0.1 to 500 nm, preferably about 1 to 200 nm, and more preferably about 10 to 100 nm. At this time, for example, the thickness of the protective film 9 is monitored, and when the thickness reaches a predetermined value, that is, when the end point is detected, the electroless plating is terminated.
[0129]
Then, the substrate on which the electroless plating has been completed is transported to the cleaning / drying device 20 by the transport robot 16, and the substrate surface is cleaned with the chemical liquid by the cleaning / drying device 20 and further rinsed with pure water (rinse). Spin at high speed to spin dry. Then, the substrate W after the spin drying is returned to the transfer box 10 by the transfer robot 16 via the load / unload station 14.
Although this example shows an example in which copper is used as the wiring material, a copper alloy, silver, a silver alloy, or the like may be used in addition to the copper.
[0130]
【The invention's effect】
As described above in detail, according to the present invention, when the porous body is pressed with an arbitrary pressure on the surface to be plated of the substrate held by the substrate stage, the porous body exists in the gap between the porous body and the surface to be plated. By eliminating the plating solution to be plated, plating can be performed in a state where the entire surface of the porous body is uniformly adhered to the surface to be plated of the substrate without increasing the load. Thereby, the wiring material (metal film) can be buried by plating preferentially inside the wiring groove (trench) or the fine hole (via hole), and the flatness of the surface after plating can be improved. Therefore, it is possible to reduce or omit the load of the selective etching process of the convex portion such as the CMP, thereby not only reducing the cost but also solving the problems specific to the CMP such as dishing and oxide erosion.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating an example of forming a wiring in a semiconductor device in the order of steps.
FIG. 2 is a plan view of a substrate processing apparatus including a plating apparatus according to an embodiment of the present invention.
FIG. 3 is a schematic view showing a main part of the plating apparatus shown in FIG.
FIG. 4 is a diagram attached to a description when removing a plating solution existing in a gap generated between a porous body and a surface to be plated of a substrate by the plating apparatus shown in FIG. 3;
FIG. 5 is a schematic diagram showing a main part of a plating apparatus according to another embodiment of the present invention.
FIG. 6 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention.
FIG. 7 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention.
FIG. 8 is a diagram attached to a description of removing a plating solution existing in a gap generated between a porous body and a surface to be plated of a substrate in the plating apparatus shown in FIG. 7;
FIG. 9 is a system diagram showing an example of a plating solution management supply system.
FIG. 10 is a vertical sectional front view showing an example of the cleaning / drying apparatus shown in FIG. 3;
FIG. 11 is also a plan view.
FIG. 12 is a schematic view showing an example of the bevel etching / back surface cleaning apparatus shown in FIG.
13 is a vertical sectional front view showing an example of the heat treatment apparatus shown in FIG.
FIG. 14 is a plan sectional view similarly.
FIG. 15 is a front view of the pretreatment device shown in FIG. 3 when the substrate is delivered.
FIG. 16 is also a front view at the time of chemical solution processing.
FIG. 17 is a front view at the time of rinsing.
FIG. 18 is a sectional view showing the processing head when the substrate is delivered.
FIG. 19 is an enlarged view of a portion A in FIG. 18;
FIG. 20 is a diagram corresponding to FIG. 19 when the substrate is fixed.
FIG. 21 is also a system diagram.
FIG. 22 is a cross-sectional view showing a substrate head when the substrate is delivered by the electroless plating apparatus shown in FIG.
FIG. 23 is an enlarged view of a portion B in FIG. 22;
FIG. 24 is a diagram corresponding to FIG. 23, showing the substrate head when the substrate is fixed.
FIG. 25 is a diagram corresponding to FIG. 23, showing the substrate head during the plating process.
FIG. 26 is a partially cut front view showing the plating tank when the plating tank cover is closed.
FIG. 27 is also a cross-sectional view showing a cleaning tank.
FIG. 28 is also a system diagram.
FIG. 29 is a schematic view showing an example of the polishing apparatus shown in FIG.
30 is a schematic front view of the vicinity of a reversing device in the film thickness measuring device shown in FIG.
FIG. 31 is also a plan view of a reversing arm portion.
FIG. 32 is a processing flowchart in the substrate processing apparatus shown in FIG. 3;
FIG. 33 is a diagram illustrating a state in which a plating solution is present in a gap generated between a porous body and a surface to be plated of a substrate in a conventional example.
[Explanation of symbols]
3 micro holes (micro concaves)
4 Wiring groove (fine recess)
7 Copper layer
8 Wiring
9 Protective film
10 Transport box
18 Plating equipment
20 Cleaning and drying equipment
22 Bevel etching / backside cleaning equipment
24 Thickness measuring instrument
26 Heat treatment equipment
28 Pretreatment device
30 Electroless plating equipment
32 polishing equipment
56 Housing
58 Substrate holder
60 processing head
100 processing tank
102 Lid
112 nozzle plate
112a injection nozzle
120 Chemical tank
122 Chemical pump
124 nozzle plate
124a injection nozzle
132 Rinse liquid supply source
200 plating bath
202 Cleaning tank
204 substrate head
230 Housing
232 Head
234 Suction head
268 injection nozzle
280 injection nozzle
282 nozzle plate
286 Head cleaning nozzle
316 heater
320 heat exchanger
322 heating device
324 stirring pump
330 Plating solution management unit
332 dissolved oxygen concentration meter
422 Substrate Stage
428 cleaning cup
430 chemical liquid nozzle
432 Nozzle for pure water
434 Cleaning sponge
436 swivel arm
500 swing arm
502 electrode head
504 Substrate stage
504a Vacuum passage
504b Vacuum suction groove
504c storage tank
506 Cathode section
512 Cathode electrode
514 Sealing material
520 rotating housing
522 vertical housing
524 rotating body
526 anode
528 Porous body
530 Anode chamber
532 Plating solution impregnating material
534 Porous pad
534a Lower layer pad
534b Upper layer pad
540 airbag
544 Plating solution introduction pipe
550 power supply
560 piezo oscillator
562 ultrasonic oscillator
564 pressure port
568 vacuum pump
600 plating solution tray
604 reservoir
608 Plating solution adjustment tank
610 Temperature Controller
612 Plating solution analysis unit
820 polishing cloth
822 polishing table
824 Top Ring
826 Abrasive liquid nozzle
828 Dresser
922 Substrate Stage
924 center nozzle
926 edge nozzle
928 back nozzle
1002 chamber
1004 hot plate
1006 Cool plate

Claims (16)

A substrate stage for holding the substrate,
A sealing member that abuts against the peripheral portion of the surface to be plated of the substrate held by the substrate stage and seals the peripheral portion in a water-tight manner, and a cathode portion including a cathode electrode that is in contact with the substrate and energized;
An electrode head which is disposed vertically above the cathode part and which is provided with an anode and a porous body having water retention properties above and below,
Plating injecting means for injecting a plating solution between the anode and the surface to be plated of the substrate held by the substrate stage,
A pressing mechanism that presses the porous body at an arbitrary pressure on a surface to be plated of the substrate held by the substrate stage,
A power supply for applying a plating voltage between the cathode electrode and the anode,
A plating solution removing mechanism for removing a plating solution existing in a gap between the porous body and the surface to be plated when pressing the porous body against the surface to be plated of the substrate held by the substrate stage with an arbitrary pressure. A plating apparatus comprising: The plating solution elimination mechanism may include at least two of a substrate held by the substrate stage, the porous body, and a plating solution injected between the anode and a surface to be plated of the substrate held by the substrate stage. The plating apparatus according to claim 1, further comprising a mechanism for causing relative movement. The plating solution elimination mechanism may include at least one of a substrate held by the substrate stage, the porous body, and a plating solution injected between the anode and a surface to be plated of the substrate held by the substrate stage. The plating apparatus according to claim 1, further comprising a mechanism for vibrating. The plating solution elimination mechanism may include at least one of a substrate held by the substrate stage, the porous body, and a plating solution injected between the anode and a surface to be plated of the substrate held by the substrate stage. 2. The plating apparatus according to claim 1, further comprising a mechanism for vibrating in a direction perpendicular to a plating surface of the substrate held by the substrate stage. 5. The plating apparatus according to claim 3, wherein the vibrating mechanism uses an ultrasonic wave or a vibrator using an exciting coil. 5. The plating apparatus according to claim 3, wherein the vibrating mechanism includes a piezo vibrator. The plating apparatus according to claim 3, wherein the vibration mechanism utilizes pressure vibration. 2. The plating solution removing mechanism according to claim 1, further comprising: an anode chamber containing the anode therein and having an opening end closed by the porous body; and a pressure control unit for controlling a pressure in the anode chamber. The plating apparatus described in the above. Forming a seed layer on a substrate having fine recesses for wiring, performing plating while supplying a plating solution between the seed layer and the anode, performing plating, and filling the fine recesses with a wiring material by a plating method. So,
Before and after pressing the porous body having a water retention property disposed between the seed layer and the anode against the seed layer with an arbitrary pressure, a plating solution existing between the porous body and the seed layer is eliminated. And then conducting plating between the seed layer and the anode to perform plating. The plating method according to claim 9, wherein the energization is performed only when the porous body is in contact with the seed layer. A loading / unloading unit for loading / unloading the substrate;
A plating apparatus according to any one of claims 1 to 8,
A washing and drying device for washing and drying the substrate;
A substrate processing apparatus comprising: a transfer device that transfers a substrate between the loading / unloading unit, the plating device, and the cleaning / drying device. 12. The substrate processing apparatus according to claim 11, further comprising a polishing apparatus for polishing and removing an unnecessary metal film formed on the surface of the substrate by the plating apparatus to flatten the unnecessary metal film. 13. The substrate processing apparatus according to claim 11, further comprising a heat treatment apparatus for performing a heat treatment on the substrate on which the metal film is formed by the plating apparatus. 14. The substrate processing apparatus according to claim 11, further comprising a bevel etching apparatus for etching and removing a metal film attached or formed on a peripheral portion of the substrate. The apparatus according to any one of claims 11 to 14, further comprising a monitor unit that monitors at least one of a voltage value and a current value when a voltage is applied between the anode and the cathode electrode of the plating apparatus. The substrate processing apparatus according to any one of the preceding claims. 16. The substrate processing apparatus according to claim 11, further comprising a film thickness measuring device for measuring a film thickness of the metal film formed on the substrate surface.

Images