JP2004360000A - Method and equipment for wafer processing - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method by which, even if a wafer grows in size, an etching solution can be perfectly removed from the surface of the wafer in a water-washing step after an etching step and the occurrence of uneven etching in the water-washing step can be prevented. <P>SOLUTION: In the initial stage of the water-washing step, pure water is ejected vertically onto the surface of the wafer W through a plurality of spray nozzles 44 arranged in a water-washing treatment tank 34 in a state where the spray nozzles are kept stationary. Then the pure water is ejected toward the surface of the wafer through the plurality of spray nozzles while oscillating the spray nozzles in a direction orthogonal to a longitudinal direction of the wafer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention supplies an etching solution to the surface of a substrate such as a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a printed circuit board, and a semiconductor wafer to etch the substrate, and then purifies pure water toward the surface of the substrate. The present invention relates to a substrate processing method and a substrate processing apparatus for jetting and washing a substrate with water.
[0002]
[Prior art]
A water washing tank is connected to an etching tank for supplying an etching solution to the surface of the substrate and etching the substrates one by one. Then, the substrate that has been subjected to the etching treatment in the etching treatment tank is carried into the washing tank, and while being transported in the horizontal direction by the transport roller, pure water is directed toward the surface of the substrate from the plurality of spray nozzles arranged in the washing tank. Is ejected, the etchant on the surface of the substrate is washed away from the substrate. Conventionally, the spray nozzle disposed in the washing tank is fixed downward so that the discharge port faces the surface of the substrate, and pure water discharged from the spray nozzle is sprayed perpendicular to the surface of the substrate. (For example, see Patent Document 1).
[0003]
[Patent Document 1]
Japanese Patent Publication No. 3-77278 (page 2, FIG. 5)
[0004]
[Problems to be solved by the invention]
However, in recent years, the size of substrates has been increasing. For example, as for a glass substrate for a liquid crystal display device, a large substrate having a side length of 2 m has been used. When the size of the substrate is increased as described above, in the conventional apparatus, even if the etching liquid is sprayed from the spray nozzle to the surface of the substrate after the etching treatment in the washing tank to wash away the etching solution from the substrate, the central part of the substrate is not cleaned. Some of the etching solution that has accumulated in the substrate is not flushed to the peripheral edge of the substrate by the pure water, but the mixed solution in which the etching solution and the pure water are mixed indefinitely on the surface of the substrate stays. Occur. As a result, for example, a wiring pattern formed by etching the metal film on the substrate surface in the etching process is unevenly etched in the substrate surface by the mixed solution in the washing process, and uneven etching occurs on the substrate after the washing process. Problem.
[0005]
The present invention has been made in view of the above circumstances, and even when a substrate is enlarged, an etching solution can be completely removed from the substrate in a water washing process after the etching process, and the etching process can be performed in the water washing process. It is an object of the present invention to provide a substrate processing method capable of preventing occurrence of unevenness, and to provide a substrate processing apparatus capable of suitably performing the method.
[0006]
[Means for Solving the Problems]
The invention according to claim 1 is an etching step in which an etching solution is supplied to the surface of a substrate to etch the surface of the substrate, and pure water is jetted from a plurality of spray nozzles toward the surface of the substrate to etch the surface of the substrate. A water washing step of removing a liquid from above the substrate, wherein in the initial stage of the water washing step, the plurality of spray nozzles are kept stationary while the pure water is perpendicular to the surface of the substrate from the spray nozzles. Thereafter, pure water is ejected from the spray nozzle toward the surface of the substrate while oscillating the plurality of spray nozzles in a direction (transverse direction) orthogonal to the longitudinal direction of the substrate. And
[0007]
According to a second aspect of the present invention, in the substrate processing method according to the first aspect, the spray nozzle is swung about an axis along a longitudinal direction of the substrate.
[0008]
According to a third aspect of the present invention, in the substrate processing method according to the first aspect, the spray nozzle is swung linearly in a direction (transverse direction) orthogonal to a longitudinal direction of the substrate. .
[0009]
The invention according to claim 4 is provided with an etching solution supply means for supplying an etching solution to the surface of the substrate, an etching bath for performing an etching process on the substrate, a washing bath connected to the etching bath, A plurality of spray nozzles arranged in a washing tank, which spray pure water toward the surface of the substrate to remove an etchant on the surface of the substrate from the substrate, and pure water for supplying pure water to the spray nozzles. A nozzle swinging means for swinging the plurality of spray nozzles in a direction (short direction) orthogonal to the longitudinal direction of the substrate, wherein the substrate is moved into the washing tank. Initially, when the plurality of spray nozzles are stopped, pure water is spouted from the spray nozzles perpendicular to the surface of the substrate while the plurality of spray nozzles are stationary. Characterized by being adapted to eject pure water toward the surface of the substrate from the spray nozzle while oscillating the plurality of spray nozzles by means.
[0010]
According to a fifth aspect of the present invention, in the substrate processing apparatus of the fourth aspect, the nozzle swinging means is a rotating mechanism for swinging the spray nozzle around an axis along a longitudinal direction of the substrate. It is characterized by.
[0011]
According to a sixth aspect of the present invention, in the substrate processing apparatus according to the fourth aspect, the nozzle swinging means swings the spray nozzle linearly along a direction (short direction) orthogonal to the longitudinal direction of the substrate. It is a linear motion mechanism for moving.
[0012]
According to the substrate processing method of the first aspect of the present invention, in the initial stage of the washing step, pure water is jetted from the spray nozzle perpendicular to the surface of the substrate with the spray nozzle stationary, so that pure water is The etching solution that is struck against the substrate surface with a strong force and penetrates into the details of the pattern on the substrate surface also floats on the surface. Thereafter, pure water is ejected from the spray nozzle toward the surface of the substrate while swinging the plurality of spray nozzles in a direction (transverse direction) orthogonal to the longitudinal direction of the substrate. The etchant is flushed in the short direction of the substrate by the pure water, flows down from both peripheral edges along the longitudinal direction of the substrate, and is removed from the substrate. As described above, since the etching solution is flushed in the short direction of the substrate by the pure water, even if the substrate is enlarged, the etching solution can be completely removed from the substrate. Therefore, the mixed liquid in which the etching liquid and the pure water are mixed does not stay on the surface of the substrate.
[0013]
In the substrate processing method according to the second aspect of the present invention, in the initial stage of the water washing step, as shown in a schematic view from the front in FIG. Since the pure water 2 is jetted perpendicularly to the surface of the substrate W, the etching liquid floats on the surface of the substrate W as described above. Thereafter, as shown in the schematic views of FIGS. 5B and 5C, the plurality of spray nozzles 1 are swung about the axis along the longitudinal direction of the substrate W while the substrate 1 Since the pure water 2 is jetted toward the surface of the substrate W, the etching solution on the surface of the substrate W is washed away by the pure water 2 in the short direction of the substrate W and removed from the substrate W. That is, as shown in FIG. 5B, when the plurality of spray nozzles 1 turn leftward when viewed from the front, the spray nozzles 1 move leftward from a direction perpendicular to the surface of the substrate W from the spray nozzles 1. When the pure water 2 is jetted in the inclined direction, the etching liquid on the substrate W is swept toward the left peripheral edge of the substrate W by the pure water as shown by an arrow, and flows down from the left peripheral edge. The substrate W. On the other hand, as shown in FIG. 5C, when the plurality of spray nozzles 1 rotate rightward when viewed from the front, the spray nozzles 1 move rightward from a direction perpendicular to the surface of the substrate W from the spray nozzles 1. When the pure water 2 is ejected in the inclined direction, the etching solution on the substrate W is pushed down by the pure water toward the right peripheral edge of the substrate W as shown by an arrow, and flows down from the right peripheral edge. The substrate W. By repeating the operations shown in FIGS. 5B and 5C, the etchant is effectively removed from the substrate W.
[0014]
In the substrate processing method according to the third aspect of the present invention, in the initial stage of the water washing step, as shown in a schematic diagram viewed from the front in FIG. Since the pure water 2 is jetted perpendicularly to the surface of the substrate W, the etching liquid floats on the surface of the substrate W as described above. Thereafter, as shown in the schematic views of FIGS. 6B and 6C, the plurality of spray nozzles 1 are swung linearly in a direction (short direction) orthogonal to the longitudinal direction of the substrate W. As the pure water 2 is ejected from the spray nozzle 1 toward the surface of the substrate W, the etchant on the surface of the substrate W is pushed away by the pure water 2 in the short direction of the substrate W and removed from the substrate W. Is done. That is, as shown in FIG. 6B, when the plurality of spray nozzles 1 move to the left as viewed from the front, the area from the plurality of spray nozzles 1 to the left side of the center of the substrate W in the short direction. As more pure water 2 is ejected, most of the etching liquid on the substrate W is washed away toward the left peripheral edge of the substrate W by the pure water as shown by an arrow, and the left peripheral edge is removed. And is removed from the substrate W. On the other hand, as shown in FIG. 6C, when the plurality of spray nozzles 1 move to the right as viewed from the front, the area from the plurality of spray nozzles 1 to the right side of the center of the substrate W in the short direction. As more pure water 2 is ejected, most of the etching liquid on the substrate W is swept toward the right peripheral edge of the substrate W by the pure water as shown by an arrow, and the right peripheral edge is discharged. And is removed from the substrate W. By repeating the operations shown in FIGS. 6B and 6C, the etchant is effectively removed from the substrate W.
[0015]
In the substrate processing apparatus according to the fourth aspect of the invention, when the substrate is initially carried into the washing tank, pure water is ejected from the spray nozzle perpendicular to the surface of the substrate while the spray nozzle is stationary. Therefore, the pure water is struck against the substrate surface with a strong force, and the etchant that has entered the pattern details on the substrate surface also floats on the surface. Thereafter, pure water is ejected from the spray nozzle toward the surface of the substrate while the plurality of spray nozzles are swung in a direction (short direction) orthogonal to the longitudinal direction of the substrate by the nozzle swing means. The etchant on the surface of the substrate is washed away by pure water in the short direction of the substrate, flows down from both peripheral edges along the longitudinal direction of the substrate, and is removed from the substrate. As described above, since the etching solution is flushed in the short direction of the substrate by the pure water, even if the substrate is enlarged, the etching solution can be completely removed from the substrate. Therefore, the mixed liquid in which the etching liquid and the pure water are mixed does not stay on the surface of the substrate.
[0016]
In the substrate processing apparatus according to the fifth aspect of the present invention, after the etching liquid is floated on the surface of the substrate at the beginning when the substrate is carried into the washing tank, a plurality of spray nozzles are rotated by the rotating mechanism to extend the substrate in the longitudinal direction. Pure water is sprayed from the spray nozzle toward the surface of the substrate while being swung about the axis along the direction, so that the etchant on the surface of the substrate is swept away by the pure water in the short direction of the substrate. As described above with reference to FIGS. 5B and 5C, the etching solution is effectively removed from the substrate.
[0017]
In the substrate processing apparatus according to the sixth aspect of the present invention, after the etchant is floated on the surface of the substrate at the beginning when the substrate is carried into the washing tank, the plurality of spray nozzles are moved by the linear motion mechanism to extend the length of the substrate. Pure water is ejected from the spray nozzle toward the surface of the substrate while being swung linearly along the direction (transverse direction) perpendicular to the direction. The substrate is swept away in the lateral direction of the substrate, and the etchant is effectively removed from the substrate as described above with reference to FIGS. 6B and 6C.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a preferred embodiment of the present invention will be described with reference to FIGS.
[0019]
FIG. 1 is a schematic side view showing one embodiment of the present invention and showing an example of a schematic configuration of a substrate processing apparatus. This substrate processing apparatus is configured by connecting an etching processing unit 10 and a water washing processing unit 12 in series.
[0020]
The etching processing unit 10 includes a sealed etching processing tank 14 having a carry-in side opening 16 and a carry-out side opening 18. A plurality of forward / reverse rotatable transport rollers 20 for supporting the substrate W and transporting the substrate W in the horizontal direction are arranged in parallel in the etching processing tank 14 along the substrate transport path. The substrate W is reciprocated in the etching bath 14 by these transport rollers 20. A plurality of spray nozzles 22 are arranged above the substrate transport path along the substrate transport path. An etchant supply pipe 24 is connected to these spray nozzles 22. The etching liquid supply pipe 24 is connected to an etching liquid tank 28 in which the etching liquid 26 is stored, and supplies the etching liquid 26 in the etching liquid tank 28 to the spray nozzle 22 to the etching liquid supply pipe 24. Pump 30 is inserted. Then, the etching liquid is ejected from the spray nozzle 22 toward the surface of the substrate W transported by the transport roller 20. A drain pipe 32 is connected to the bottom of the etching tank 14 so that the etching liquid flowing down to the inner bottom of the etching tank 14 is discharged from the etching tank 14 through the drain pipe 32. You. The distal end of the drainage pipe 32 is inserted into the inside of the etching solution tank 28 so that a part of the etching solution is circulated and used.
[0021]
The rinsing section 12 includes a sealed rinsing tank 34 having a carry-in side opening 36 and a carry-out side opening 38. The rinsing section 34 is disposed adjacent to the etching section 14 and includes an etching section. The carry-out side opening 18 of 14 and the carry-in side opening 36 of the rinsing tank 34 are arranged to face each other. A plurality of forward / reversely rotatable transport rollers 40 for supporting the substrate W and transporting the substrate W in the horizontal direction are arranged in parallel with each other along the substrate transport path inside the washing processing tank 34. The transport rollers 40 reciprocate the substrate W in the rinsing tank 34. A discharge nozzle 42 having a slit-shaped discharge port formed at the lower end surface is disposed in the vicinity of the carry-in side opening 36 of the rinsing processing tank 34, at a position directly above the substrate transfer path. From the slit-shaped discharge port of the discharge nozzle 42, pure water is discharged in a curtain shape onto the surface of the substrate W carried into the rinsing tank 34. Note that the discharge nozzle 42 does not have to be installed.
[0022]
In addition, a plurality of spray nozzles 44 and 46 are arranged along the substrate transport path above and below the substrate transport path in the rinsing tank 34, respectively. A pure water supply pipe 48 is connected to these spray nozzles 44 and 46 and the above-mentioned discharge nozzle 42, respectively. The pure water supply pipe 48 is connected to a pure water tank 52 in which pure water 50 is stored, and the pure water 50 in the pure water tank 52 is supplied to the pure water supply pipe 48 by the discharge nozzle 42 and the spray nozzles 44. A pump 54 for feeding to 46 is inserted. Then, pure water is ejected from the spray nozzles 44 and 46 toward the front surface and the back surface of the substrate W transported by the transport roller 40, respectively. A drain pipe 56 is connected to the bottom of the washing tank 34 so that pure water flowing down to the inner bottom of the washing tank 34 is discharged from the washing tank 34 through the drain pipe 56. The tip of the drain pipe 56 is inserted into the pure water tank 52 so that a part of the pure water is circulated.
[0023]
The upper spray nozzle 44 disposed inside the washing tank 34 is supported so as to be capable of swinging, that is, rotating around an axis along the longitudinal direction of the substrate W. A turning mechanism for turning the 44 is provided. That is, for example, a pure water supply pipe 48 is inserted into and fixed to the inside of the washing processing tank 34 as shown in a schematic plan view in a cross section of the washing processing tank 34 in a horizontal direction in FIG. As shown in the front view, one end of each spray nozzle 44 formed with a plurality of downward discharge ports 58 arranged at equal intervals in the length direction is connected to the pure water supply pipe 48 via a rotary joint 60. Support shafts 62 which are rotatably connected and supported, and which are integrally fixed to the end surfaces of the other ends of the spray nozzles 44, are respectively provided on the walls of the washing tank 34 via bearings (not shown). Supported rotatably. A driven pulley 64 is fixed to a support shaft 62 of each spray nozzle 44, and a belt 66 is wound around each driven pulley 64, and the belt 66 is fixed to a rotating shaft of a driving motor 68. It is multiplied by 70. In a device equipped with such a mechanism, when the drive motor 68 is alternately and rotationally driven in the forward and reverse directions, the spray nozzles 44 are respectively rotated via the drive pulley 70, the belt 66, and the driven pulleys 64, respectively. Can be
[0024]
In the substrate processing apparatus having the above-described configuration, when the substrate W that has been subjected to the etching processing in the etching processing unit 10 is carried out of the etching processing tank 14 and the substrate W is carried into the washing processing tank 34 of the washing processing unit 12. At the beginning of the carry-in, that is, at the beginning of the washing step, the spray nozzle 44 is stationary with its discharge port 58 facing directly downward as shown in FIG. Pure water is ejected from the outlet 58 perpendicularly to the front surface and the back surface of the substrate W, respectively. In this way, the pure water is spouted perpendicularly to the surface of the substrate W, so that the pure water is struck against the surface of the substrate W with a strong force, and the etching liquid that has entered the pattern details on the surface of the substrate W is also removed on the surface. It is raised to.
[0025]
Thereafter, the driving motor 68 is driven as described above, and each spray nozzle 44 is rotated from the discharge port 58 of the spray nozzle 44 toward the surface of the substrate W as shown in FIG. Pure water is jetted at various angles. Thus, when the discharge port 58 of the spray nozzle 44 faces obliquely downward and to the left as viewed from the front as shown by the solid line in FIG. 3B, pure water spouting from the discharge port 58 of the spray nozzle 44 As a result, the etchant on the substrate W is swept toward the left peripheral edge of the substrate W, flows down from the left peripheral edge, and is removed from the substrate W (see FIG. 5B). On the other hand, when the discharge port 58 of the spray nozzle 44 faces obliquely downward right as viewed from the front as shown by a two-dot chain line in FIG. The etching solution on the substrate W is flushed toward the right peripheral edge of the substrate W by the water, flows down from the right peripheral edge and is removed from the substrate W (see FIG. 5C). As described above, the pure water is ejected from the discharge port 58 while the spray nozzle 44 rotates, whereby the etching liquid is effectively removed from the substrate W. The above operation is executed by controlling the drive motor 68 by a controller (not shown) in accordance with the timing of loading the substrate W into the washing processing tank 34.
[0026]
In the above-described embodiment, the spray nozzle 44 is rotated about an axis along the longitudinal direction of the substrate W. However, instead of the operation of rotating the spray nozzle, the spray nozzle is moved in the longitudinal direction of the substrate W. You may make it rock | swivel linearly along the direction orthogonal to a direction, ie, reciprocate. That is, as shown in the front view of the spray nozzle in FIG. 4, a plurality of downward discharge ports 74 are formed at regular intervals in the length direction (perpendicular to the paper). A plurality of spray nozzles 72 are attached to the holding plate 76 in parallel in the horizontal direction, and the holding plate 76 is reciprocated in a direction orthogonal to the longitudinal direction of the substrate by a linear drive mechanism (not shown). Is also good.
[0027]
In the apparatus having the spray nozzle 72 shown in FIG. 4, the spray nozzle 72 is in a stationary state at the beginning (the initial stage of the washing step) when the substrate after the etching process is carried into the washing tank 34 (in the initial stage of the washing step). Pure water is spouted from the discharge port 74 of the spray nozzle 72 perpendicularly to the surface of the substrate W. Thus, the etchant floats on the surface of the substrate W. Thereafter, the plurality of spray nozzles 72 are reciprocated along with the holding plate 76 in a direction (short side direction) orthogonal to the longitudinal direction of the substrate W by the direct drive mechanism, and the substrate W is discharged from the discharge port 74 of the spray nozzle 72. Pure water is jetted toward the surface. Thereby, when the plurality of spray nozzles 72 move to the left as viewed from the front, more pure water is discharged from the discharge ports 74 of the plurality of spray nozzles 72 to the left side of the center of the substrate W in the lateral direction. Water is jetted out, and most of the etchant on the substrate W is washed away by pure water toward the left peripheral edge of the substrate W, flows down from the left peripheral edge, and is removed from the substrate W ((FIG. b)). On the other hand, when the plurality of spray nozzles 72 move rightward when viewed from the front, more pure water is discharged from the discharge ports 74 of the plurality of spray nozzles 72 to a region on the right side of the center of the substrate W in the lateral direction. Is blown out, and most of the etching liquid on the substrate W is washed away toward the right peripheral edge of the substrate W by the pure water, flows down from the right peripheral edge, and is removed from the substrate W (FIG. 6 (c) )reference). As described above, the pure water is ejected from the discharge port 74 while the spray nozzle 72 linearly reciprocates, whereby the etching liquid is effectively removed from the substrate W.
[0028]
In the above-described embodiment, the substrate is transported with the longitudinal direction of the substrate being along the substrate transport path. However, the substrate W is placed with the longitudinal direction of the substrate orthogonal to the substrate transport path. When transporting, the spray nozzle is caused to swing in a direction along the substrate transport path. That is, the spray nozzle 44 is rotated about an axis along the substrate transport path, and the spray nozzle 72 is linearly reciprocated along the substrate transport path. Further, in the embodiment shown in FIG. 1, the washing process is performed while the substrate W is reciprocated (oscillated) in the washing process tank 34. However, the washing process is performed while the substrate W is continuously transported in one direction. The processing device may be used. Further, in the embodiment shown in FIG. 1, the spray processing is performed in the etching processing unit 10, but the etching processing is performed by another method, for example, the substrate is etched by the paddle method, and then the water cleaning processing is performed. The present invention is also applicable to a substrate processing apparatus.
[0029]
【The invention's effect】
According to the substrate processing method of each of the inventions according to claims 1 to 3, even if the substrate becomes large, the etching liquid can be completely removed from the substrate in the water washing step after the etching step. It is possible to prevent etching unevenness from occurring in the process.
[0030]
When the substrate processing apparatus according to each of the inventions according to claims 4 to 6 is used, the method according to each of the inventions according to claims 1 to 3 can be suitably implemented, and the effects described above can be obtained.
[Brief description of the drawings]
FIG. 1 is a schematic side view showing one embodiment of the present invention and showing an example of a schematic configuration of a substrate processing apparatus.
FIG. 2 is a schematic plan sectional view showing an example of a configuration of a spray nozzle rotating mechanism installed in a washing tank of the apparatus shown in FIG.
FIG. 3 is a front view of a spray nozzle installed in a washing tank of the apparatus shown in FIG. 1;
FIG. 4 shows another embodiment of the present invention, and is a view of a spray nozzle as viewed from the front.
FIG. 5 is a front view for explaining the operation of the invention according to claim 2;
FIG. 6 is a front view for explaining the operation of the invention according to claim 3;
[Explanation of symbols]
W Substrate 10 Etching section 12 Rinse section 14 Etching tank 20, 40 Conveying roller 22 Spray nozzle 24 for etching liquid Etching liquid supply pipe 26 Etching liquid tank 30, 54 Pump 34 Rinse processing tank 42 Discharge nozzles 44, 46, 72 Pure water spray nozzle 48 Pure water supply pipe 52 Pure water tank 58, 74 Spray nozzle discharge port 60 Rotary joint 62 Support shaft 64, 70 Pulley 66 Belt 68 Drive motor 76 Holding plate

Claims (6)

An etching step of etching the substrate surface by supplying an etching solution to the surface of the substrate,
A washing step of ejecting pure water from the plurality of spray nozzles toward the surface of the substrate to remove an etchant on the surface of the substrate from above the substrate,
In the substrate processing method having
In the initial stage of the rinsing step, pure water is spouted from the spray nozzles perpendicular to the surface of the substrate in a state where the spray nozzles are stationary, and thereafter, the spray nozzles are moved in the longitudinal direction of the substrate. A pure water jet from the spray nozzle toward the surface of the substrate while swinging in a direction perpendicular to the substrate. 2. The substrate processing method according to claim 1, wherein the spray nozzle is swung about an axis along a longitudinal direction of the substrate. 2. The substrate processing method according to claim 1, wherein the spray nozzle is swung linearly along a direction orthogonal to a longitudinal direction of the substrate. An etching treatment tank that includes an etching solution supply unit that supplies an etching solution to the surface of the substrate, and an etching process of the substrate is performed,
A washing tank connected to the etching tank,
A plurality of spray nozzles arranged in the washing tank to eject pure water toward the surface of the substrate to remove the etchant on the surface of the substrate from the substrate,
Pure water supply means for supplying pure water to these spray nozzles,
In a substrate processing apparatus provided with
The plurality of spray nozzles, comprising a nozzle swing means for swinging in a direction orthogonal to the longitudinal direction of the substrate,
At the beginning when the substrate is carried into the washing tank, pure water is spouted perpendicularly to the surface of the substrate from the spray nozzle while the plurality of spray nozzles are stopped, and then the nozzle swings. A substrate processing apparatus characterized in that pure water is ejected from the spray nozzle toward the surface of the substrate while the plurality of spray nozzles are oscillated by means. The substrate processing apparatus according to claim 4, wherein the nozzle swinging unit is a rotating mechanism that swings the spray nozzle around an axis along a longitudinal direction of the substrate. The substrate processing apparatus according to claim 4, wherein the nozzle swinging unit is a linear movement mechanism that swings the spray nozzle linearly along a direction orthogonal to a longitudinal direction of the substrate.

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