JP2004228594A - Substrate processing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method capable of minimizing an influence of a time required for a temperature control processing of a substrate on a decrease in throughput. Another object of the present invention is to provide a substrate processing apparatus capable of precisely controlling a temperature in a processing unit for performing liquid processing on a substrate.
SOLUTION: Ten stages of heat treatment units G3 to G5 and five stages of coating processing units G1 and G2 are arranged around a first main wafer transfer unit A1 and a second main wafer transfer unit A2, In the heat treatment units G3 to G5, the temperature control / transfer device C transfers the wafer W while controlling the temperature of the wafer W, thereby minimizing the effect of the time required for the substrate temperature control process on the decrease in throughput. be able to.
[Selection diagram] Fig. 1

Description

  The present invention relates to a substrate processing apparatus such as a coating and developing apparatus for applying and developing a resist solution on a semiconductor wafer, for example.

  For example, in a photoresist processing step in the manufacture of a semiconductor device, a substrate such as a semiconductor wafer (hereinafter, referred to as a “wafer”) is exposed to a pattern, subjected to a temperature control process after a heating process, and then developed. . For such a series of processing, a coating and developing apparatus has been conventionally used.

  The coating and developing apparatus includes a series of processes necessary for coating and developing the wafer, for example, a resist coating process for applying a resist solution, a heating process for heating the exposed wafer, and a wafer after the heating process. Various processing apparatuses are provided for individually performing a temperature control process for controlling the temperature and a developing process for performing a developing process on the wafer after the temperature control process. The loading and unloading of wafers to and from each processing apparatus and the transfer of wafers between processing apparatuses are performed by a main transfer apparatus.

  By the way, if only the main transporting apparatus transports each unit, the burden on the main transporting apparatus increases, and there is a possibility that the throughput of the entire apparatus is reduced.

  Therefore, for example, in Patent Document 1 below, a processing unit group is configured by predetermined processing units among processing units for performing continuous process processing, and each of these processing unit groups is provided with a substrate transfer position. While the sub-transfer robot transports the substrate between the substrate transfer position and the processing units forming the processing unit group, the sub-transport robot moves between the processing units other than the processing units forming the processing unit group and the substrate transfer position of the processing unit group. Discloses a technique in which a main transfer robot transfers a substrate. As a result, the load on the transfer device can be reduced, and the throughput can be improved.

  For example, between the exposure process and the development process, a temperature control process is performed after the heat process, but the time required for the temperature control process is prolonged, and the throughput tends to be reduced. According to the above, the sub-transport robot with reduced load reduces the time from the end of the heating process to the start of the developing process in order to transport the substrate between the processing unit performing the heating process and the processing unit performing the temperature adjustment process. In addition, it is possible to reduce the influence of the time required for the temperature control process on the decrease in throughput.

JP-A-8-162514

  However, in the technology disclosed in the above publication, the actual time required for the temperature control process is not different from the conventional one, and there is a limit in reducing the influence of the time required for the temperature control process on the decrease in throughput. .

  Further, in the technology disclosed in the above publication, the substrate is carried into a processing unit that performs a heating process or a processing unit that performs a temperature control process via a sub-transport robot, so that the substrate is not heated before the heating process or performed. There is a problem in that the thermal history of the substrate before the preparation processing varies, and processing at a precise temperature cannot be performed. In particular, recently, there has been a tendency to quickly respond to temperature changes by thinning the heating plate or temperature control plate. And it becomes difficult to process the substrate at a precise temperature.

  The present invention has been made in view of such a point, and an object of the present invention is to provide a substrate processing apparatus capable of substantially reducing the time required for temperature control processing of a substrate.

  A second object of the present invention is to provide a substrate processing apparatus capable of more precisely performing thermal processing and temperature control processing of a substrate.

  On the other hand, in order to make the entire coating and developing processing apparatus compact, a plurality of heating processing units and temperature control processing units are arranged in a multi-stage together with the transfer device as a whole, thereby saving space in the coating and developing processing apparatus. Has been achieved.

  As the diameter of the wafer W increases, all the processing units also increase in size. Therefore, in order to save space, it is necessary to further increase the arrangement of the processing units.

  However, as the size of the heat treatment unit increases, the amount of heat of the heat treatment unit also increases. Therefore, if the heat processing apparatus is arranged near one of the other processing units as one processing unit in the heat treatment unit group as in the past, another processing for performing liquid processing on the wafer W at around normal temperature is performed. There is a possibility that temperature control in a unit, for example, a resist coating device or the like cannot be performed accurately. Then, when the temperature control is disturbed in these processing units, there arises a problem that the thickness of the resist film changes.

  A third object of the present invention, which has been made in view of the above circumstances, is to provide a substrate processing apparatus capable of precisely controlling a temperature in a processing unit for performing liquid processing on a substrate.

  In order to achieve the above object, the substrate processing apparatus of the present invention has a processing unit having openings on both sides for transferring a substrate, and is disposed so as to face each opening of the processing unit, and the opening is provided. A first and a second main transfer unit for carrying the substrate in and out of the processing unit via the processing unit, wherein the processing unit is configured to perform a thermal process on the substrate; And a temperature control / transport unit for transporting the substrate between the first and second main transport units via the respective openings and the processing unit. Have.

  A substrate processing apparatus according to the present invention includes a processing unit having openings on both sides for transferring a substrate, and a processing unit disposed so as to face each opening of the processing unit and the processing unit via the opening. First and second main transport units for carrying in and out a substrate between the first and second main transport units, wherein the processing unit performs a first processing unit for performing a thermal process on the substrate, and performs a thermal process on the substrate. A second processing unit for adjusting the temperature of the substrate to a predetermined temperature, and the first processing unit and the second processing unit between the first and second main transfer units through the opening. A temperature controller / transporter for transporting the substrate between the first processor, the second processor, and the temperature controller / transporter. I have.

  A substrate processing apparatus according to the present invention includes a processing unit having openings on both sides for transferring a substrate, and a processing unit disposed so as to face each opening of the processing unit and the processing unit via the opening. A first and a second main transfer unit for carrying the substrate in and out between the first and second main transfer devices, wherein the processing unit transfers the substrate to and from the first and the second main transfer device through the opening And a temperature control unit for adjusting the substrate to a predetermined temperature, a processing unit for performing thermal processing on the substrate, and a sub-transport for transferring the substrate between the temperature control unit and the processing unit. Unit.

  A substrate processing apparatus according to the present invention includes a processing unit having openings on both sides for transferring a substrate, and a processing unit disposed so as to face each opening of the processing unit and the processing unit via the opening. A first and a second main transfer unit for carrying in and out the substrate between the first and second main transfer units, wherein the processing unit transfers the substrate to and from the first and the second main transfer unit via the opening Performing a temperature control unit for adjusting the substrate to a predetermined temperature, a first processing unit for performing a thermal process on the substrate, a second processing unit for performing a thermal process on the substrate, A temperature control section, a sub-transport section for transferring the substrate between the first processing section and the second processing section, the temperature control section, the first processing section, and the second processing section. The processing units are arranged in a straight line.

  A substrate processing apparatus according to the present invention includes a processing unit having openings on both sides for transferring a substrate, and a processing unit disposed so as to face each opening of the processing unit and the processing unit via the opening. A first and a second main transfer unit for carrying in and out the substrate between the processing units, wherein the processing unit adjusts the substrate to a predetermined temperature, a processing unit for performing thermal processing on the substrate, and A temperature control / transport unit for transporting the substrate to and from the processing unit; and a substrate between the first and second main transport units via the opening in an ascending / descending and raised state. And a plurality of elevating pins for transferring the substrate to and from the temperature control / transportation unit in a lowered state.

A substrate processing apparatus according to the present invention includes a processing unit having openings on both sides for transferring a substrate, and a processing unit disposed so as to face each opening of the processing unit and the processing unit via the opening. A first processing unit for performing thermal processing on the substrate, the first processing unit including first and second main transfer units that carry in and out a substrate between the first processing unit and the first processing unit;
A second processing unit for performing thermal processing on the substrate, and a temperature for adjusting the substrate to a predetermined temperature and transporting the substrate between the first processing unit and the second processing unit. The transfer of the substrate between the first and second main transfer units through the opening in a state where the temperature control and transfer unit can be moved up and down and can be raised and lowered, and the temperature control and transfer is performed in a lowered state. A plurality of elevating pins for transferring a substrate to and from the unit, wherein the first processing unit, the second processing unit, the temperature control / transport unit, and the elevating pins are linearly arranged.

  In the substrate processing apparatus of the present invention, the processing units are arranged in multiple stages in a vertical direction.

  The substrate processing apparatus of the present invention further includes a liquid supply unit that is disposed at a position where the substrate can be transferred to and from the first or second transfer unit and that supplies a predetermined liquid to the substrate.

  According to a substrate processing apparatus of the present invention, in the substrate processing apparatus of the twenty-fifth aspect, the liquid supply units are arranged in multiple stages in a vertical direction.

  The substrate processing apparatus of the present invention further includes an inspection unit that is arranged at a position where the substrate can be transferred to and from the first or second main transport unit and that inspects the substrate.

  In the substrate processing apparatus of the present invention, the inspection units are arranged in multiple stages in a vertical direction.

  In the substrate processing apparatus according to the present invention, the inspection unit performs a microscopic inspection on the substrate.

  In the substrate processing apparatus of the present invention, the processing unit is further disposed on a side of the first main transport unit opposite to a surface facing the processing unit.

  In the substrate processing apparatus of the present invention, a receiving portion for temporarily receiving and holding substrates before and after processing is further disposed on a side of the processing unit opposite to a surface facing the first or second main transfer section.

  The substrate processing apparatus of the present invention further includes an inspection unit that is arranged in the receiving unit and performs an inspection on the substrate.

  In the substrate processing apparatus according to the present invention, the inspection unit performs a macro inspection on the substrate.

  In the present invention, the substrate is further provided with an inspection unit that is arranged at a position where the substrate can be delivered to or received from the first or second main transport unit or at the receiving unit, and performs an inspection on the substrate. Inspection of the substrate can be performed efficiently in the process of processing.

  The substrate processing apparatus of the present invention includes a substrate transport apparatus that transports a substrate, and processing units disposed on both sides and a front surface of the substrate transport apparatus, and the processing units on at least one side are vertically arranged in multiple stages. The substrate transfer device is a vertical transfer type capable of transferring a substrate to each unit, and the processing unit side in which a support member that supports the substrate transfer device in a vertical direction is disposed on a front surface. Attached to.

  In the present invention, the substrate transfer device is a vertical transfer type capable of transferring a substrate to each of the units, and a support member that supports the substrate transfer device in a vertical direction is disposed on a front surface. Since it is mounted on the processing unit side, maintenance of the substrate transfer device from the side opposite to the processing unit side can be easily performed.

  The substrate processing apparatus of the present invention performs a heat treatment on a first processing unit group in which a first processing unit for supplying a predetermined liquid onto a substrate and performing a liquid process is stacked in multiple stages, and the substrate. A second processing unit group in which a second processing unit in which a heating unit and a temperature control unit that performs a temperature control process on the substrate are integrated adjacent to each other is stacked in multiple stages; and the liquid processing is performed. And an exposure unit for performing an exposure process on the substrate, wherein the substrate is waited in a temperature control section of the second processing unit before the substrate is carried into the exposure unit.

  According to the present invention, in addition to the function of performing the temperature control process, the temperature control unit of the second processing unit can also have a function as a standby place for waiting the substrate before exposure, for example, holding the substrate before exposure. There is no need to provide a separate cassette.

  As described above, according to the present invention, the time required for the temperature control processing of the substrate can be substantially reduced, and the adverse effect on the throughput that the time required for the temperature control processing of the substrate can be reduced as much as possible.

  Further, according to the present invention, it is possible to precisely control the temperature in the first processing unit group for performing processing on the substrate at around normal temperature.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  1 to 3 are views showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention, wherein FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

  The substrate processing apparatus 1 loads a plurality of semiconductor wafers W as substrates to be processed into or out of the system in units of, for example, 25 wafers in a wafer cassette CR, or loads the semiconductor wafers W into and out of the wafer cassette CR. A cassette station 10 as a receiving unit for carrying out and a plurality of single-wafer processing units for performing predetermined processing on the semiconductor wafers W one by one in the coating and developing process are arranged in multiple stages at predetermined positions. It has a configuration in which an interface unit 14 for transferring a semiconductor wafer W between the processing station 12 and an exposure apparatus (not shown) provided adjacent to the processing station 12 is integrally connected.

  In the cassette station 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, five wafer cassettes CR are placed in a row in the X direction with the respective wafer entrances facing the processing station 12 at the positions of the projections 20a on the cassette mounting table 20. The wafer carrier 22 which is placed and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. ing. Further, the wafer transfer body 22 is configured to be rotatable in the θ direction, so as to be able to access a heat treatment system unit belonging to a third processing unit section G3 having a multi-stage configuration described later as shown in FIG. It has become.

  As shown in FIG. 1, the processing station 12 includes a third processing unit G3, a fourth processing unit G4, and a fifth processing unit G5 from the cassette station 10 on the rear side of the apparatus (upper side in the figure). A first main wafer transfer unit A1 as a first main transfer unit is provided between the third processing unit unit G3 and the fourth processing unit unit G4. As will be described later, the first main wafer transfer section A1 includes a first processing unit section G1, a third processing unit section G3, a fourth processing unit section G4, and the like. Is provided for selective access to Further, a second main wafer transfer unit A2 as a second main transfer unit is provided between the fourth processing unit unit G4 and the fifth processing unit unit G5, and the second main wafer transfer unit A2 is provided. Are installed such that the second main wafer carrier 17 can selectively access the second processing unit G2, the fourth processing unit G4, the fifth processing unit G5, and the like.

  Further, a heat treatment unit is provided on the back side of the first main wafer transfer unit A1, for example, an adhesion unit (AD) 110 for hydrophobizing the wafer W, and a heating unit (heating unit) for heating the wafer W. HP) 113 are stacked two by two in order from the bottom as shown in FIG. The adhesion unit (AD) may further include a mechanism for controlling the temperature of the wafer W. On the back side of the second main wafer transfer section A2, a peripheral exposure apparatus (WEE) 120 for selectively exposing only the edge portion of the wafer W and an inspection section for inspecting the resist film thickness applied to the wafer W are provided. An inspection device 119 is provided. These peripheral exposure device (WEE) 120 and inspection device 119 may be arranged in multiple stages. Further, a heat treatment unit may be arranged on the back side of the second main wafer transfer section A2, similarly to the back side of the first main wafer transfer section A1.

  As shown in FIG. 3, in the third processing unit section G3, an oven-type processing unit that performs a predetermined process by placing the wafer W on a mounting table, for example, a first heat treatment unit that performs a predetermined heating process on the wafer W A high-temperature heat treatment unit (BAKE), a high-precision temperature control unit (CPL) that performs heating processing on the wafer W with high-accuracy temperature management, and a transfer unit for transferring the wafer W from the wafer carrier 22 to the main wafer carrier 16. A transition unit (TRS) and a temperature control unit (TCP) are stacked in order from the top, for example, in 10 stages. In the third processing unit G3, the third stage from the bottom is provided as a spare space in the present embodiment. Also in the fourth processing unit G4, for example, a post-baking unit (POST) as a fourth thermal processing unit, a pre-baking unit (PAB) as a second thermal processing unit for performing a heating process on the wafer W after resist application, a high precision The temperature control units (CPL) are stacked in, for example, 10 stages from the top. Further, in the fifth processing unit G5, for example, a post-exposure baking unit (PEB) and a high-precision temperature control unit (CPL) are provided as a third heat treatment unit for performing a heat treatment on the exposed wafer W, for example, 10 stages from the top. It is overlaid.

  In FIG. 1, a first processing unit G1 and a second processing unit G2 are provided side by side in the Y direction on the front side (lower side in the figure) of the processing station 12 in the apparatus. Between the first processing unit G1 and the cassette station 10 and between the second processing unit G2 and the interface 14, the temperature of the processing liquid supplied to each processing unit G1 and G2 is controlled. Liquid temperature control pumps 24 and 25 to be used are provided, respectively, and further, for supplying clean air from an air conditioner (not shown) provided outside the processing system to the inside of each processing unit section G1 to G5. Ducts 31 and 32 are provided.

  As shown in FIG. 2, in the first processing unit G1, five spinner-type processing units as liquid supply units for performing a predetermined processing by placing the semiconductor wafer W on the spin chuck in the cup CP, for example, resist coating There are three units (COT), two stages of bottom coating units (BARC) for forming an anti-reflection film for preventing reflection of light during exposure, and five stages from the bottom. Similarly, in the second processing unit G2, five spinner-type processing units, for example, developing units (DEV) are stacked in five stages in order from the bottom. In the resist coating unit (COT), the drainage of the resist solution is troublesome both mechanically and in terms of maintenance, so that it is preferable to dispose the resist solution in the lower stage. However, they can be arranged in the upper stage as needed.

  The above-described first to fifth processing units G1 to G5, the adhesion unit 110, the heating unit (HP) 113, the exposure processing apparatus (WEE) 120, and the inspection apparatus 119 can be removed for each maintenance. Further, a panel 40 (FIG. 1) on the rear side of the processing station 12 is also detachably mounted.

  In addition, chemical chambers (CHM) 26, 27 as liquid supply mechanisms for supplying the above-described predetermined processing liquid to the processing units G1 and G2 are provided at the lowermost stages of the first and second processing units G1 and G2. Are provided respectively.

  A central control unit 8 for controlling the entire system of the substrate processing apparatus 1 is provided below the cassette station 10.

  A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages in the front part of the interface part 14, and a wafer carrier 27 is provided in the center part. The wafer carrier 27 moves in the X and Z directions to access both cassettes CR and BR. Further, the wafer carrier 27 is configured to be rotatable in the θ direction, so that it can also access the fifth processing unit G5. Further, as shown in FIG. 3, a plurality of high-precision temperature control units (CPLs) are provided on the back surface of the interface unit 14, and are, for example, vertically arranged in two stages. The wafer carrier 27 is also accessible to this temperature control unit (CPL).

  Next, the configuration of the first main wafer transfer section A1 as the main transfer section will be described with reference to FIGS. Note that the second main wafer transfer section A2 is the same as the first main wafer transfer section A1, and a description thereof will be omitted.

  In FIG. 4, the main wafer transfer section A1 is surrounded by a housing 41 and a door 38 attached to the back side of the housing 41 so as to be openable and closable. The illustration of the door 38 is omitted. A window 38a is formed in the door 38 so as to access the adhesion unit (AD) 110, and in the case of the second main wafer transfer section A2, to access the peripheral exposure apparatus 120 and the inspection apparatus 119. I have. Windows 41b and 41a are provided on the front and side surfaces, respectively, so that the housing 41 can be accessed from the outside. Five front windows 41b (FIG. 5) are provided to transfer the wafer W to and from the first processing unit G1 arranged in five stages, while the side windows 41a are provided. As shown in FIG. 6, ten wafers W are provided to transfer the wafers W to and from the third and fourth processing units G4 arranged in ten stages. It is possible to increase or decrease this window as needed. Further, on both side surfaces of the housing 41, surrounding members 44 connecting the third and fourth processing unit portions G3 and G4 are provided with a small gap u with respect to the processing unit portions G3 and G4. Each is attached. The gap u is a distance that can suppress generation and intrusion of particles, and is, for example, 0.5 mm. Each of the processing members G3 and G4 of the surrounding member 44 has a shock-absorbing packing 30, and windows 30a corresponding to the packing 30 are formed as shown in FIG. In addition, partition plates 34 are provided in the surrounding member so as to partition each window 30a.

  In addition, in FIG. 4, a surrounding member 44 having the same configuration as the surrounding member 44 is also provided at a portion corresponding to the five openings 97 provided in the housings 41 ′ on the first and second processing unit portions G1 and G2 side. Is attached to the main wafer transfer section A1 (A2) with a small gap u (for example, 0.5 mm).

  At the bottom of the first main wafer transfer section A1, for example, four fans 36 for controlling the internal pressure, temperature and humidity are provided. The operation of these fans 36 is controlled by the central control unit 8 (FIG. 2).

  As shown in FIGS. 4 and 5, a vertical pole 33 is installed on the first and second processing unit sections G1 and G2 in the housing 44, and inside one of the poles 33, As shown in FIG. 7, a pair of pulleys 51 and 52 are attached to the upper end and the lower end, and an endless belt 49 as a vertical driving means is stretched between the pulleys 51 and 52. The support 45 of the first main wafer carrier 16 is connected to the vertical drive belt 49 via a belt clamp 47. As shown in FIGS. 4 and 5, a flange portion 45 a is provided on the support portion 45, and the flange portion 45 a is slidably engaged with sleeves 33 a formed on each of the pawls 33. . The lower pulley 52 is connected to the rotation shaft Ma of the drive motor M fixedly arranged at the bottom of the pole 33, and forms a drive pulley. With such a vertical belt driving mechanism and a vertical sliding mechanism, the main wafer carrier 16 can be vertically moved by the driving force of the driving motor M.

  The above-described elevating mechanism is similarly installed on the other pole 33, but the other pole 33 may not have the drive motor M.

  The main wafer carrier 16 has a built-in motor 50 in a support portion 45, and a rotating rod 46 rotatable in the θ direction (FIG. 5) is connected to the motor 50. Is fixed to an arm base end 55 serving as a base end of the three arms 7a, 7b and 7c.

  FIG. 8 is a view of the main wafer carrier 16 as viewed from the front side in the state of FIG. Vertical members 95 are attached to both sides of the distal end of the base end portion 55 of the arm, and a shield plate 9 that shields radiant heat from both arms is attached to the vertical members 95 between the upper arm 7a and the middle arm 7b. Further, an attachment member 96 extending between the vertical members 95 is attached. A pair of optical sensors 94 are provided at the center of the mounting member 96 and at the distal end of the arm base end portion 55, whereby the presence or absence of the wafer W on each arm and the protrusion of the wafer W are confirmed.

  FIG. 9 is a cross-sectional view showing the configuration of the base end portion 55 of the main wafer carrier 16, and FIG. 10 is a cross-sectional view taken along the line [10]-[10] in FIG. An arm support plate 54 is fixed to the base end of each of the arms 7a to 7c. These arm support plates 54 are formed in an L-shaped section, and each arm support plate 54 has an arm carriage 56 movable in the arm longitudinal direction along a rail 61 laid on a base 55 a of a base end portion 55. Are fixedly mounted.

  At the lower part of each arm carriage 56, a guide 62 slidably engaged with each rail 61 is provided. Further, the inner side surface of each arm carriage 56 is provided near a pulley 63 disposed near the arm original position (the base end 55b of the base 55) and near the arm forward end position (the distal end 55c of the base 55), respectively. Each of the driving belts 65 stretched between the pulleys 64 is fixed via a belt clamp 66. Each pulley 63 is coaxially coupled to a pulley 68 via a bearing 67, and each pulley 68 is connected to a pulley 70 via a drive belt 69, respectively. It is fixed.

  When the rotating shaft of each motor 60 rotates, each pulley 63 rotates via each pulley 70, each drive belt 69, and each pulley 68, and each drive belt 65 is driven by the rotation drive of each pulley 63, and each drive belt Each of the arm carriages 56 moves along with each of the rails 61 along with the rails 65, and the direction of the movement is determined by the rotation direction of each of the motors 60. These motors are, of course, independently driven, and the arms 7a to 7b are independently movable.

  With the configuration of the main wafer transfer body 16 described above, the arms 7a to 7b can rotate in the θ direction and can move in the X, Y, and Z directions, and as described above, the processing unit sections G1, G3, and G4. Will be accessible.

  Next, with reference to FIGS. 11 to 13, a pre-baking unit (PAB), a post-exposure baking unit (PEB), and a post of ten stages belonging to the fourth processing unit section G4 and the fifth processing unit section G5. The baking unit (POST) will be described. Each of these baking units only differs in processing temperature.

  As shown in FIG. 11, such a heat treatment unit includes a heat treatment apparatus H on the front side of the system and a temperature control / conveyance apparatus C on the back side in a housing 75. In the heat treatment apparatus H, a hot plate 86 heated by a heating wire 86b is provided in a cylindrical support 88 via a suitable heat insulating material. Below the support body 88, three pins 85 for transferring the wafer W are installed so as to be able to move up and down by a driving device 82. The three pins 85 are provided in through holes 86a formed in a hot plate 86. It is placed buried in.

  On the other hand, the temperature control / conveyance device C is provided with sliders 79a and 79b movable along, for example, two guide rails 77 disposed along the X direction, and attached to the sliders 79a and 79b, respectively. The temperature control / transport plate 71 is fixed via the connecting members 78, 78. Elevating pins 84 for transferring the wafer W are installed below the temperature control / transport plate 71 so as to be able to move up and down by a driving device. A notch 71a is formed in the temperature control / conveyance plate 71 so that each lifting pin 84 buried under the plate can be raised. As the temperature control mechanism, the temperature of the wafer W is adjusted to a predetermined temperature, for example, about 40 ° C. by using cooling water or the like, and temperature control is performed. One slider 79a is provided with a drive device (not shown), for example, a drive device using air or a motor, and the other slider 79b is provided with a sensor (not shown) for recognizing an operation position.

  On the front side (left side in the figure) of the housing 75, an air flow path 75c for air pressure control, which will be described later, is formed. The air flow path 75c is connected to the temperature control / transport apparatus C via a fan 87a. Is in communication with Although not shown, the flow path 75c extends from the uppermost stage to the lowermost stage in the vertical direction (Z direction). Fans 87b are also installed on both side surfaces of the housing 75 on the heat treatment apparatus H side, and exhaust ports 75d are formed, which similarly communicate from the uppermost stage to the lowermost stage.

  Further, on one side surface portion of the temperature control / transfer device C side of the housing 75, for example, with respect to the fourth processing unit section G4, the wafer W is transferred to and from the first main wafer transport section A1. For this purpose, an opening 75a is provided, and an opening 75b is provided on the other side surface portion so as to face the window 41a of the second main wafer transfer section A2. These openings 75a and 75b are provided with shutters 76a and 76b that can be opened and closed, respectively. The shutters 76a and 76b are opened and closed by a drive unit (not shown) under the centralized control unit 8.

  FIG. 13 is a side sectional view of the entire fourth processing unit section G4 (fifth processing unit section G5). As shown in FIG. 13, the fourth processing unit section G4 ( Fifth processing unit G5) In order to suppress heat diffusion to the outside and to suppress an increase in the temperature of the atmosphere in the apparatus, a temperature control pipe 90 for circulating cooling water is provided from the top to the bottom, not shown. Is connected to a pump provided below the processing unit G4 (G5).

  Next, a high-precision temperature control unit (CPL) as a temperature control unit belonging to all the units of the heat treatment system (the third to fifth processing unit units G3 to G5) will be described with reference to FIG. Regarding this, since the temperature control / transportation device C in the above-described pre-baking unit (PAB) or the like is replaced with the high-precision temperature control device C2 and the heat treatment device H is not provided, the pre-baking unit (PAB) or the like The same reference numerals are given to the same components as those in the above, and the description thereof is omitted.

  In the high-precision temperature control device C2, a high-precision temperature control plate 133 is provided in a cylindrical support 131. Although not illustrated in the high-precision temperature control plate 133, for example, a Peltier element is used, and the temperature of the wafer W is adjusted to a predetermined temperature, for example, 23 ° C. by feedback control, so that precise temperature control can be performed. Below the support 133, three elevating pins 85 for transferring the wafer W are installed so as to be able to elevate and lower by a driving device 82, and the elevating pins 85 are penetrated on the high-precision temperature control plate 133. It is buried in the hole 133a.

  Next, the configuration of the high-temperature heat treatment unit (BAKE) belonging to the third processing unit section G3 will be described with reference to FIG. The same components as those in the pre-baking unit (PAB) are denoted by the same reference numerals, and description thereof will be omitted.

  A temperature controller C1 as a temperature controller is disposed on the front side of the system in the housing 75. The temperature controller C1 is provided with a temperature control plate 163 in a cylindrical support 161. The temperature control of the temperature control plate 163 is performed using, for example, cooling water or the like, similarly to the pre-baking unit (PAB). On the other hand, a thermal high-temperature heat treatment apparatus HH for performing heat treatment at a higher temperature than the heat treatment apparatus H in the pre-baking unit (PAB) or the like is disposed on the back side. The configuration of the high-temperature heat treatment apparatus HH is the same as that of the heat treatment apparatus H, except that a high-temperature hot plate 112 is provided on a cylindrical support member 88 via a suitable heat insulating material. Below the support member 88, three pins 85 for transferring the wafer W are installed so as to be able to move up and down by a driving device 82, and these three pins 85 are formed through the respective hot plates 112. It is buried in the hole 112a.

  The distance between the temperature control device C1 and the high-temperature heat treatment device HH is set to be larger than the distance between the temperature control / transport device C and the heat treatment device H in a pre-baking unit (PAB) or the like. This is because the influence of the heat treatment by the high temperature of the temperature heat treatment apparatus HH does not adversely affect the temperature control processing of the temperature control apparatus C1.

  A guide rail 118 extends in the X direction beside the temperature control device C and the high temperature heat treatment device HH, and the wafer W is moved along the guide rail 118 so as to be movable by a driving device (not shown). A sub arm 115 is provided as a sub-transport section for transport. The sub arm 115 has a pair of hands 115a, 115a.

  Although the detailed configuration of the temperature control units (TCP) belonging to the lower two stages of the fourth and fifth processing unit sections G4 and G5 is not shown, the configuration is the same as that of the above-described high-precision temperature control unit (CPL). In addition, as a temperature control mechanism of the temperature control unit (TCP), temperature control is performed using cooling water, a Peltier element, or the like. For example, the number of Peltier elements in this case is smaller than the number of Peltier elements of the high-precision temperature control plate 133.

  FIG. 16 shows a transition unit (TRS) belonging to the third processing unit section G3. This is different from other heat treatment units in that there is no heat treatment system device or the like (for example, a temperature control device C1), and only a lift pin 85 and a drive device for driving it up and down are provided. Other components of the transition unit (TRS) are the same as those of the high-precision temperature control unit (CPL) and the like. Although the spare space belonging to the above-described third processing unit G3 is not shown, as in the case of the transition unit (TRS), the elevation pins and the elevation pins are used to transfer the wafer W to another processing unit. There is only a driving device for driving.

  Next, the configuration of the resist coating unit (COT) shown in FIGS. 17 and 18 will be described.

  In this unit, a fan / filter unit F for air control, which will be described later, is mounted above the housing 41 ′, and below it is near the center of the unit bottom plate 151 smaller than the width of the housing 41 ′ in the Y direction. An annular cup CP is provided, and a spin chuck 142 is provided inside the cup CP. The spin chuck 142 is configured to rotate by the rotational driving force of the driving motor 143 in a state where the wafer W is fixed and held by vacuum suction. In the cup CP, pins 148 for transferring the wafer W are provided so as to be able to move up and down by a driving device 147, and a drain port 145 for waste liquid is provided. A waste liquid pipe 141 is connected to the drain port, and the waste liquid pipe 141 communicates with a lower waste liquid port (not shown) using a space N between the unit bottom plate 151 and the housing 41 ′. The waste liquid pipes 141a are respectively connected to a plurality of resist coating units (COT). Therefore, the waste liquid pipes 141a are arranged in a line in this processing unit as shown in the figure.

  On the other hand, the space L between the housing 41 'and the unit bottom plate on the opposite side (the right side in FIG. 17) forms an air flow path for controlling air pressure, which will be described later. The fan / filter unit F of another resist coating unit (COT) at the lower stage of (COT) is visible.

  The nozzle 135 for supplying a resist to the wafer surface of the wafer W is connected to a liquid supply mechanism (not shown) in the chemical chamber (CHM) 26 (FIG. 2) via a supply pipe 134. The nozzle 135 is detachably attached to the tip of the nozzle scan arm 136 by a nozzle standby unit 146 provided outside the cup CP, and is transferred to a predetermined resist discharge position set above the spin chuck 142. It has become. The nozzle scan arm 136 is attached to the upper end of a vertical support member 149 that can move horizontally on a guide rail 144 laid in one direction (Y direction) on the unit bottom plate 151, and a Y-direction driving mechanism (not shown) Thereby, it moves in the Y direction integrally with the vertical support member 149.

  The nozzle scan arm 136 can also be moved in the X direction perpendicular to the Y direction in order to selectively attach the nozzle 135 according to the type of resist in the nozzle standby section 146, and is also moved in the X direction by an X direction driving mechanism (not shown). It is supposed to.

  Further, a drain cup 138 is provided between the cup CP and the nozzle standby unit 146, and at this position, the nozzle 135 is cleaned before the resist is supplied to the wafer W.

  On the guide rail 144, not only the vertical support member 149 supporting the nozzle scan arm 136 described above, but also a vertical support member supporting the rinse nozzle scan arm 139 and movable in the Y direction is provided. A rinsing nozzle 140 for side rinsing is attached to the tip of the rinsing nozzle scan arm 139. The rinsing nozzle scan arm 139 and the rinsing nozzle 140 are moved by a Y-direction driving mechanism (not shown) so that the wafer W mounted on the spin chuck 142 and the nozzle standby position (solid line position) set on the side of the cup CP. Are translated or linearly moved with a rinse liquid discharge position (position indicated by a dotted line) set immediately above the peripheral portion of the rinsing liquid.

  Next, the configuration of the developing unit (DEV) shown in FIGS. 19 and 20 will be described. In this developing unit (DEV), the same components as those in the resist coating unit (COT) are denoted by the same reference numerals, and description thereof will be omitted.

  The nozzle 153 for supplying the developing solution to the wafer surface of the wafer W is slightly longer than the diameter of the wafer W and has a plurality of holes (not shown) for discharging the developing solution. A nozzle standby unit 154 is provided on a side of the cup CP, and a rinse nozzle 155 for supplying a rinse liquid for washing the developing solution to the surface of the wafer W is provided. The rinse nozzle 155 has the same configuration as the nozzle 153. Further, in the nozzle standby section 154, dummy dispensing is performed periodically or as needed in order to discard the developing solution dried and deteriorated at the tip of the nozzle 135.

  Although the nozzle scan arm 136 of the resist coating unit (COT) can also move in the X direction, the nozzle scan arm of the developing unit (DEV) can only move in the Y direction along the guide rail 144. I have.

  Further, as for the bottom coating unit (BARC), the coating liquid in the resist coating unit (COT) is merely replaced with an anti-reflective coating material, and the description of the configuration is omitted here.

  Next, a series of operations of the substrate processing apparatus 1 described above will be described with reference to a flowchart shown in FIG.

  First, in the cassette station 10, the wafer carrier 22 accesses the cassette CR on the cassette mounting table 20 that contains unprocessed wafers, and takes out one semiconductor wafer W from the cassette CR (S1). When the semiconductor wafer W is taken out from the cassette CR, the wafer carrier 22 rotates 180 ° in the θ direction, and the shutter 76a of the opening 75a of the temperature control unit (TCP) in the third processing unit G3 (see FIG. 12) is opened, the hand of the wafer carrier 22 is inserted into the housing 75 through the opening 75a, and is placed on the temperature control plate. Then, a predetermined temperature control process (first temperature control) is performed (S2).

  When the temperature control process in the temperature control unit (TCP) is completed, the opening 75b on the opposite side opens, from which the upper arm 7a of the first main wafer carrier 16 is inserted, and the wafer W is received by the arm 7a. Passed. Then, the main wafer carrier 16 rotates 90 ° counterclockwise in FIG. 4, the shutter 43 of the bottom coating unit (BARC) belonging to the first processing unit G1 opens, and the upper arm 7a is inserted into the housing. Then, the wafer W is placed at a predetermined position to form an anti-reflection film (S3). As described above, the transfer of the wafer W from the processing unit of the temperature control system to the processing units (G1 and G2) of the coating system is performed only by the upper arm 7a, and the transfer after the heat treatment described later is performed by the middle arm 7b or the lower arm 7c. By doing so, the thermal effect on the wafer W can be minimized.

  When the predetermined coating process in the bottom coating unit (BARC) is completed, the shutter 43 is opened, the middle arm 7b (or the lower arm 7c) is inserted, and the wafer W is transferred, and the middle arm is returned to the original position (the casing 41). Within). Then, the wafer W is transferred to the heating unit (HP) 113 and subjected to a first pre-stage heating process (S4). The heating temperature is, for example, 120 ° C.

  Next, in the high temperature heat treatment unit (BAKE) shown in FIG. 15, the shutter 76b is opened, the shutter 76 shown in FIG. 15 is opened, and the middle arm 7b (or the first main wafer carrier A1 on which the wafer W is placed) (or The lower arm 7c) moves in the Y direction to a position immediately above the temperature control device C1, and the elevating pins 127 of the temperature control device C1 rise, and the wafer W is mounted on the pins 127 at a position higher than the height of the sub arm 115. After that, the middle arm 7b returns to the original position, and the shutter 76 closes. At this time, the sub arm 115 stands by near the center of the unit so as not to hinder the operation of the main wafer carrier 16. Then, the standby sub arm 115 moves onto the temperature control device C1. Then, the wafer W is transferred to the sub arm 115 by the lowering pins 127 descending with the wafer W placed thereon.

  The sub-arm 115 that has received the wafer W moves to the rear side in the X direction, and is similarly placed on the hot plate 112 of the high-temperature heat treatment apparatus HH, which is the next step, by driving the elevating pins, and the predetermined first A post-stage heat treatment is performed (S5). This heat treatment is performed, for example, at 230 ° C. for a predetermined time.

  When the predetermined heat treatment is completed by the high-temperature heat treatment apparatus HH, the wafer W is moved to the temperature control apparatus C1 by the sub-arm 115, placed on the temperature control plate 163 via the elevating pins 127, and adjusted to a predetermined temperature. (S6).

  Then, the wafer W is transferred from the high-temperature heat treatment unit (BAKE) to the first main wafer transfer section A1 by the first main wafer transfer body 16, from which a high-precision temperature control unit belonging to the fourth processing unit section G4. (CPL) by the same operation. Then, a predetermined temperature control process is performed at, for example, 23 ° C. (second temperature control) (S7).

  When the temperature control process is completed, the shutter 43 shown in FIG. 17 is opened, transported to the resist coating unit (COT) belonging to the first processing unit G1, and the resist liquid coating process is performed (S8). .

  In this resist coating unit (COT), when the wafer W is transported to a position immediately above the cup CP, first, the pins 148 rise, receive the wafer W, and then descend, and the wafer W is placed on the spin chuck 142. It is placed and vacuum-adsorbed. Then, the nozzle 135 waiting in the nozzle standby unit moves to a position above the center position of the wafer W shown in FIG. 17 by the mechanism of the nozzle scan arm 136 and the guide rail 144. After a predetermined resist solution is applied to the center of the wafer W, the resist solution is rotated by, for example, 100 rpm to 3000 rpm by the drive motor 143 to diffuse the resist solution over the entire surface of the wafer W by the centrifugal force. Complete.

  Subsequently, the shutter 76b of the pre-baking unit (PAB) in the fourth processing unit G4 is opened, and as shown in FIG. 22 (a), the middle arm 7b on which the wafer W is placed is moved in the Y direction in the temperature control / transport plate 71. After the wafer W is placed on the pin, the middle arm 7b is returned to the original position, and the shutter 76b is moved. Is closed, and the elevating pins 84 are lowered as shown in FIG. 9C, and the wafer W is placed on the temperature control / transport plate 71 (S9).

  Then, as shown in FIG. 23 (a), the temperature control / transfer plate 71 on which the wafer W is placed moves to the rear side to a position immediately above the hot plate 86, and then the pins 85 as shown in FIG. 23 (b). Rises and the wafer W is placed on the pins, the temperature control / transfer plate 71 returns to the original position, and the pins 85 descend as shown in FIG. 86, and a predetermined second heat treatment (PAB) is performed (S10). As a result, the remaining solvent is evaporated and removed from the coating film on the semiconductor wafer W.

  When the predetermined heat treatment is completed by the heat treatment apparatus H, the operation reverse to the operation shown in FIG. 23 is performed. That is, the wafer W is placed on the temperature control / transport plate 71 from the hot plate 86 by the temperature control / transport device C and returns to the front side. At this time, the temperature control and transfer device C moves to the front side while adjusting the temperature of the heated wafer W to, for example, about 40 ° C. (while controlling the temperature of the wafer W) (S11). As a result, the processing time from the heating process to the temperature control process can be reduced, and the throughput can be improved.

  Then, in the reverse operation to the operation described with reference to FIG. 22, the wafer W is taken out of the temperature control and transfer device C by the second main wafer transfer body 17, and then the window 38a of the door 38 shown in FIG. After passing through, it is transported to the film thickness inspection unit 119 and the peripheral exposure unit unit 120. Here, after the predetermined film thickness inspection and the substrate peripheral exposure process are performed (S12), the elevation pins 84 of the temperature control / transport device C of the fifth processing unit G5 are again moved by the second main wafer transport body 17. Then, the wafer is transferred from the interface unit 14 (S13) to the exposure device (not shown) by the wafer transfer body 27 (S15). In this case, the wafer W may be temporarily stored in the buffer cassette BR before being transferred to the exposure apparatus. Then, a predetermined temperature control process is performed by the high-precision temperature control unit (CPL) 130 of the interface unit 14 (S14). In addition, in the above-mentioned film thickness inspection, a unit for performing a microscopic inspection using an inspection device instead of an inspection directly with the naked eye, and also performs, for example, an inspection of foreign substances such as particles and a surface inspection in addition to the inspection of the film thickness. Regarding this, for example, not all the wafers W are inspected, they may be appropriately performed.

  When the exposure processing is completed, the wafer W is again transferred to the post-exposure baking unit (PEB) belonging to the fifth processing unit G5 by the wafer transfer body 27 via the interface unit 14. In this case, Is transferred from the wafer transfer body 27 to the temperature control and transfer device C by the same operation as that described in S9 to S11 (S16), and transferred from the temperature control and transfer device C to the heat treatment device H while controlling the temperature. A heat treatment is performed by the heat treatment apparatus H (third heating) (S17), and the wafer is transferred while being adjusted to a predetermined temperature by the temperature control and transfer device C (S18), and is transferred to the second main wafer transfer section A2 in the second main wafer transfer section A2. The wafer W is taken out by the main wafer carrier 17.

  Next, a high-precision temperature control unit (CPL) belonging to the fifth processing unit G5 performs a predetermined temperature control process at, for example, 23 ° C. (fourth temperature control) (S19). The developer is transported to the developing unit (DEV) belonging to the second processing unit G2, and the coating process of the developing solution is performed (S20).

  In the developing unit (DEV), when the wafer W is transported to a position immediately above the cup CP, first, the pins 148 rise, receive the wafer W, and then descend, and the wafer W is placed on the spin chuck 142. It is placed and vacuum sucked. Then, the nozzle 135 waiting in the nozzle standby section moves to a position above the peripheral position of the wafer W by the mechanism of the nozzle scan arm 136 and the guide rail 144. Subsequently, the drive motor 143 rotates the wafer W at, for example, 10 rpm to 100 rpm, and the nozzle 135 moves in the Y direction from the periphery of the wafer W, and a predetermined developing solution is applied by the centrifugal force of the rotation.

  Next, the wafer is transferred to a post-baking unit (POST) belonging to the fourth processing unit G4. In this case, the main wafer transfer body is also operated by the same operation as that described in S9 to S11 and S16 to S18. 17 is transferred to the temperature control and transfer device C (S21), transferred from the temperature control and transfer device C to the heat treatment device H, and subjected to heat treatment by the heat treatment device H (fourth heating) (S22). The wafer W is transferred by the transfer device C while adjusting the temperature to, for example, 40 ° C. to a predetermined temperature (S23), and the wafer W is taken out by the first main wafer transfer body 16 in the first main wafer transfer portion A1. This heat treatment is performed, for example, at 100 ° C. for a predetermined time. Thereby, the resist swollen by the development is hardened, and the chemical resistance is improved.

  Then, the wafer W is returned to the cassette CR of the cassette station 10 by the main wafer carrier 16 via the spare space in the third processing unit G3 and the wafer carrier 22 (S24). Here, before returning to the cassette CR of the cassette station 10, a macro inspection device (not shown) provided on the back side of the cassette station 10 may macroscopically inspect processing unevenness on the wafer substrate W with the naked eye. is there. Further, in addition to the macro inspection, for example, an inspection of a defect, a line width, and an overlay / overlay accuracy of a pattern after development may be performed. Such a macro inspection device may be externally attached so as to protrude to the rear side of the cassette station 10 or may be arranged inside the cassette station 10.

  As described above, immediately after the first heating (S5), the second heating (S10), the third heating (S17), and the fourth heating (S22), the temperature is controlled while being conveyed by the temperature and conveyance device C. -Since the temperature is controlled, the time required for the temperature control processing in the subsequent steps of the second temperature control (S7), the third temperature control (S14), and the fourth temperature control (S19) can be reduced, and the throughput is improved. I do.

  Further, each of the heat treatment units G3 to G5 is composed of 10 stages, and each of the coating processing units G1 and G2 is composed of 5 stages. Further, these processing units G1 to G5 are composed of the first main wafer transfer units A1, 21. Are arranged so as to surround the main wafer transfer section A2, a large amount of substrates can be processed quickly, and the main wafer transfer bodies 16 and 17 can efficiently access the respective processing units, thereby improving throughput. Contribute to improvement.

  In addition, the heat treatment is performed by the heat treatment apparatus H from the main wafer transfer bodies 16 and 17 via the temperature control and transfer device C, that is, before the heat treatment is performed, the temperature control and transfer device C necessarily transfers the wafer W. Since the temperature is maintained at a predetermined temperature, there is no difference in the processing state even if the heating processing time is fixed, and the thermal history of the wafer W in the entire substrate processing can be constant.

  As shown in FIG. 1, between the heating devices H, HH, etc. in the processing units G3 to G5 of each heat treatment system and each of the coating system processing units G1 and G2, devices C1, C2, C Are disposed, it is possible to minimize the thermal influence of each heating device H, HH, etc. on the processing units G1 and G2 of the coating system.

  On the other hand, since the main wafer transfer units A1 and A2 and the processing units G1 to G5 are surrounded by the surrounding members 44 and 44 ', particles to each processing unit and each transfer unit are provided. Intrusion can be prevented.

  Further, as shown in FIG. 4, the surrounding members 44 and 44 'each provide a gap u between the surrounding members 44 of the first and second main wafer transfer units A1 and A2 and each processing unit. Accordingly, the vibration due to the transfer of the main transfer wafer transfer units A1 and A2 is not transmitted to each processing unit, and each heat treatment and each coating process can be reliably performed.

  Next, with reference to FIGS. 24 to 26, control of the atmospheric pressure and the temperature / humidity of the substrate processing apparatus 1 will be described.

  In FIG. 24, air supply chambers 10a, 12a, 14a are provided above the cassette station 10, the processing station 12, and the interface unit 14, and a filter having a dustproof function, such as ULPA, is provided on the lower surface of the air supply chambers 10a, 12a, 14a. Filters 101, 102, and 103 are attached. Clean air from the ULPA filters 101, 102, and 103 in each air supply chamber is supplied to each section 10, 12, and 14 in a down flow, and the air is supplied from the air supply chamber to each processing unit as shown in FIGS. 24 and 25. It is made to flow. The air of this downflow is supplied from the above-mentioned ducts 31 and 32 in the direction of the arrow (upward), but in the first and second processing unit sections G1 and G2, each fan provided on the back side thereof The exhaust gas is exhausted from the exhaust duct 100 (see FIG. 24) to the lower exhaust port 125 via the outlet 106, and in the third to fifth processing unit sections G3 to G5, the flow path 75b and the fans 87a and 87b (FIG. ), The air is exhausted from the exhaust port 75d to the exhaust port 125 below. Further, as shown in FIG. 26, in the first and second main wafer transfer sections A1 and A2, the air is exhausted from the lower exhaust port 125 via the respective fans 36, and further, through the window 38a of the door 38, the peripheral exposure device 120 and The air is ventilated to the inspection unit 119 and exhausted to the exhaust port 125. The control unit 8 controls the rotation speed of each of the fans 106, 87a, 87b, and 36 individually for each unit.

  Further, a fan / filter unit F is attached above each of all of the coating system unit sections (G1, G2), and sensors S for measuring atmospheric pressure, temperature, and humidity are provided. The fan / filter unit F has, for example, an ULPA filter and a small fan. On the other hand, the same sensor S is provided for the third to fifth processing unit sections G3 to G5 and each unit, and the sensor S is also provided for the first and second main wafer transfer sections A1 and A2. . The detection results of each of the sensors S are taken into the control unit 8.

  With the above configuration, the air pressure in the first and second processing unit sections G1 and G2 is controlled by the first and second main wafer transfer sections A1 and A2, and the third to fifth processing unit sections G3. Is controlled to be higher than the pressure in G5 by, for example, 0.3 (Pa) to 0.4 (Pa). As described above, by controlling the air pressure in the coating system units G1 and G2 to be higher than the air pressures of the heat treatment system and the transport system, that is, by controlling the positive pressure, the coating system in which the restriction of particles is most required is most important. The coating process in the unit can be performed reliably and with high accuracy.

  Further, with the above configuration, the pressure, temperature, and humidity in each unit in the first to fifth processing unit units G1 to G5 and the first and second main wafer transfer units A1 and A2 are individually PID controlled. Therefore, each processing can be performed in an optimal environment suitable for the processing of each unit.

  In addition, in FIG. 4, during maintenance of the first or second main wafer transfer section A1 or A2, all the units G1 to G5 and all the main transfer sections A1 are opened based on a command of the control section 8 when the door 38 is opened. And the amount of clean air supplied into A2 is increased to further increase the air pressure. Thereby, particles generated at the time of maintenance can be suppressed. Further, in addition to the air pressure control, when the rear panel 40 in FIG. 1 is removed or opened and closed, the air pressure in the entire system (substrate processing apparatus 1) may be increased. In such a case, a fan that operates only during maintenance may be separately provided to increase the pressure in the entire system (substrate processing apparatus 1).

  As shown in FIG. 1, between the heating devices H, HH, etc. in the processing units G3 to G5 of each heat treatment system and each of the coating system processing units G1 and G2, devices C1, C2, C Are disposed, it is possible to minimize the thermal influence of each heating device H, HH, etc. on the processing units G1 and G2 of the coating system. Therefore, the temperature control in each of the coating system processing units G1 and G2 can be performed precisely.

  In the substrate processing apparatus 1, as shown in FIG. 27, in each of the units G3 to G5 of the heat treatment system, when one window 75a is opened by the shutter 76a, the other window 75b is closed by the shutter 76b. The opening and closing control is performed so as to be closed. As a result, each unit functions as a so-called load lock chamber, so that the environment on both sides straddling each unit can be effectively shut off, and the processing environment can be maintained in each of the units.

  Further, in the substrate processing apparatus 1, as shown in FIG. 28, when the opening 97 of each unit in each unit G1 and G2 of the liquid supply system is opened by the shutter 43, the heat treatment on both sides of this unit is performed. Opening / closing control is performed so that windows 75a and 75b of each unit in each of the unit sections G3 to G5 of the system are closed by shutters 76a and 76b. This prevents an atmosphere that adversely affects the processing from flowing from the liquid supply system unit to the heat treatment system unit.

  Further, the system allows the temperature of the liquid supply devices 58 and 59 in the chemical chambers (CHM) 26 and 27 to be controlled. Thereby, the temperature of the processing liquid supplied to the processing units G1 and G2 of the coating system is maintained in a suitable state. The chamber used as the processing unit of the coating system can be substituted for the chemical chamber.

  FIG. 29 shows a heat treatment unit according to the second embodiment of the present invention, and a description of the same elements as those in FIGS. 11 and 12 will be omitted.

  In this heat treatment unit G3 ', a temperature control device C1', a low-temperature heat treatment device LH, and a high-temperature heat treatment device HH are arranged, for example, linearly in the housing 75 in order from the front side (left side in the figure). I have. These heat treatment apparatuses LH and HH are different only in the heating temperature, and these structures are similar to the heat treatment apparatus H of the first embodiment, and a low-temperature heat treatment is applied to a cylindrical support member 88 through a suitable heat insulating material. The apparatus LH is provided with a low temperature hot plate 111, and the high temperature heat treatment apparatus HH is provided with a high temperature hot plate 112. Below the support member 88, three pins 85 for transferring the wafer W are installed so as to be able to move up and down by a driving device 82. The three pins 85 are formed on the hot plates 111 and 112, respectively. Are buried in the through holes 111a and 112a. On the other hand, the temperature control device C1 'is, for example, similar to the temperature control device in the temperature control unit (COL) of the first embodiment, and uses a Peltier element or cooling water as a temperature control mechanism.

  A guide rail 118 extends in the X direction beside the temperature control device C1 ', the low temperature heat treatment device LH, and the high temperature heat treatment device HH, and is moved along the guide rail 118 by a driving device (not shown). A sub arm 115 is provided as possible. The sub arm 115 has a pair of hands 115a, 115a.

  The heat treatment units G3 'are arranged in the same manner as the arrangement of the processing units G3 to G5 in the first embodiment. In this case, the panel 40 on the back side of the processing station 12 in FIG. 1 is moved to the back side, and is arranged according to the size of the heat treatment unit G3 '.

  Regarding the operation of the heat treatment unit G3 ', the shutter 76 is opened, and the middle arm 7b (or the lower arm 7c) of the first or second main wafer carrier A1 or A2 is positioned directly above the temperature controller C1' in the Y direction. And the elevating pin 127 of the temperature control device C1 'moves up, and after the wafer W is mounted on the pin 127 at a position higher than the height of the sub arm 115, the middle arm 7b returns to the original position and , The shutter 76 closes. At this time, the sub arm 115 is located on the low temperature heat treatment apparatus LH side so as not to hinder the operation of the main wafer carrier 16. Then, the sub arm 115 located on the side of the low temperature heat treatment apparatus LH moves to the temperature control apparatus C1 '. Then, the wafer W is transferred to the sub arm 115 by the lowering pins 127 descending with the wafer W placed thereon.

  Then, the sub arm 115 that has received the wafer W moves to the back side in the X direction, and similarly, by driving the elevating pins, the low temperature heat treatment apparatus LH as the next step and the high temperature heat treatment apparatus HH as the next step A predetermined heating process is performed while being sequentially placed on the hot plates 111 and 112.

  When the predetermined heat treatment is completed by the high temperature heat treatment apparatus HH, the wafer W is moved by the sub arm 115 to the temperature control device C1 ', and is placed on the temperature control plate 122 to perform a predetermined temperature control process.

  In the present embodiment, in particular, heat treatments having different temperatures and furthermore, a temperature control process can be continuously performed, and the throughput can be improved.

  If the temperature control device C1 ', the low-temperature heat treatment device LH, and the high-temperature heat treatment device HH are appropriately partitioned by a shielding plate, the temperature control in each device can be performed more precisely.

  FIG. 30 shows a substrate processing apparatus according to a third embodiment of the present invention. In this substrate processing apparatus 150, the second main wafer transfer section A2 in the first embodiment is deformed, and The processing unit G2 'is additionally provided, and other configurations are the same as those of the first embodiment. The processing unit G2 'has a resist coating unit (COT) and a developing unit (DEV).

  In the main wafer transfer section A1 (A2) according to the first embodiment, the main wafer transfer body 16 (17) itself does not move in the Y direction, but the third main wafer transfer section according to the third embodiment. A3 is provided with a Y-axis pole 128 so as to be movable also in the Y direction. The Y-axis pole 128 is movable along the vertical pole 33, and the main wafer carrier 17 is mounted movably along the Y-axis pole.

  As a result, after the substrates are processed in the fourth and fifth heat treatment units G4 and G5, the substrates that cannot be completely processed in the first and second coating system processing units G1 and G2 are replaced with the third third heat treatment units G1 and G2. The main wafer carrier 17 of the third main wafer carrier A3 can carry the wafer W to the processing unit G2 'to perform a predetermined coating process. This improves the throughput.

  Next, a fourth embodiment of the present invention will be described with reference to FIGS. 31 to 34 are views showing a coating and developing processing system according to an embodiment of the present invention. FIG. 31 is a plan view, and FIG. 32 is a front view. FIG. 33 is a cross-sectional view taken along the X direction of FIG. 31, and FIG. 34 is a cross-sectional view taken along the Y direction of FIG. 31 in a region where the temperature adjustment processing unit 218 is arranged.

  As shown in FIG. 31, the coating and developing processing system 201 loads and unloads, for example, 25 wafers W from the outside into the coating and developing processing system 201 in units of cassettes, and loads and unloads wafers W from and into the cassette C. Station 202 having a multi-stage arrangement of various single-wafer processing units for performing a predetermined process on a wafer W in the coating and developing process, and a first processing station 203 Between a second processing station 204 having substantially the same configuration as the first station disposed adjacent to the station, and an exposure apparatus (not shown) disposed adjacent to the second processing station 204. The interface unit 205 for transferring the wafer W is integrally connected to the interface unit 205. In the first processing station 203, an anti-reflection film and a resist film are mainly applied on the wafer W, and in the second processing station 204, the exposed resist film is developed.

  At the cassette station 202, a plurality of cassettes C are aligned in a row in the X direction (the vertical direction in FIG. 31) with the entrance and exit of the wafer W facing the processing station 203 at the position of the positioning protrusion 210a on the cassette mounting table 210. It can be freely mounted on. A wafer transfer body 211 movable in the arrangement direction (X direction) of the cassette C and the arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is movable along the transfer path 212. , Each of the cassettes C can be selectively accessed.

  The wafer transfer body 211 is also configured to be rotatable in the θ direction, and each of the first heating and temperature adjustment processing groups 214a as a second processing unit group in a first processing station 203 described later. -It is configured to be able to access the temperature control processing unit (CPL) 218a of the temperature control processing unit 210a.

  As shown in FIGS. 31 and 32, in the first processing station 203, as a first processing unit group for performing liquid processing on the front side, an anti-reflection film coating unit (BARC) group 213a and a resist film coating unit ( CT) group 213b. The antireflection film coating unit (BARC) group 213a is configured by stacking three layers of antireflection film coating units (BARC) 216 that perform coating processing on the wafer W at around normal temperature in the Z-axis direction. The resist film applying unit (CT) group 213b is configured by stacking three resist film applying units (CT) 217 that perform an application process on the wafer W at around room temperature in the Z-axis direction.

  In the center of the first processing station 203, a first heating / temperature control processing unit group 214a and a second heating / temperature control processing unit group 214b are disposed as a second processing unit group with the transfer device 219a interposed therebetween. ing. In the first heating / temperature adjustment processing unit group 214a, the first heating / temperature adjustment processing units 210a are stacked in eight stages in the Z-axis direction. The tone processing units 210b are stacked in seven stages in the Z-axis direction, and a transport unit (STL) to be described later is arranged below them. Each of the first and second heating / temperature control units 210a and 210b includes a temperature control unit (CPL) 218a and 218b for performing temperature control on the wafer W and a heat processing unit (HP) 220a and a heat processing unit (HP) 220a for performing heat processing. 220b are integrally formed adjacent to each other.

  As shown in FIG. 31 and FIG. 33, the first heating / temperature adjustment processing unit group 214a is configured by stacking the first heating / temperature adjustment processing units 210a in, for example, eight levels, and all the first heating / temperature adjustment processing units 210a are stacked. In the processing unit 210a, the temperature control processing unit (CPL) 218a is located on the side of the anti-reflection film coating unit (BARC) group 213a, and the first heating / temperature control processing group 214a and the anti-reflection film coating unit (BARC) group. 213a. FIG. 33 is a cross-sectional view taken along the X direction of FIG. 31 and shows a positional relationship between the first processing unit group 213a and the second processing unit group 214a along the X direction. It is. Similarly, the second heating / temperature adjustment processing unit group 214b is configured by stacking the second heating / temperature adjustment processing units 210b in multiple stages, and the temperature adjustment processing is performed in all the second heating / temperature adjustment processing units 210b. The unit 218b is arranged on the resist film application unit (CT) group 213b side.

  An anti-reflection film coating unit (BARC) group 213a, a resist film coating unit (CT) group 213b, and first and second heating / temperature control unit groups 214a and 214b are arranged around the vertical transfer type transfer device 219a. Have been. Then, the transfer of the wafer W between the first heating / temperature control processing unit group 214a and the antireflection film coating unit (BARC) group 213a, the second heating / temperature control processing unit group 214b and the resist film coating unit (CT) The transfer of the wafer W to / from the group 213b is performed by the transfer device 219a. Further, shutter members 247a and 247b that can be opened and closed are provided on both sides of the temperature control unit (CPL) 218a of the first heating / temperature control unit 210a. The transfer of the substrate between the first heating / temperature control unit 210a and the wafer transfer body 211 and the transfer of the substrate between the first heating / temperature control unit 210a and the transfer device 219a are performed by the shutter 247a, 247b. Further, a shutter member 247a that can be opened and closed is provided on the side of the temperature control processing unit (CPL) 218b of the second heating / temperature control processing unit 210b on the side of the transfer device, and the transfer device 219a is provided via the shutter member 247a. The substrate is transferred between the temperature control unit (CPL) 218b and the temperature control processing unit (CPL) 218b.

  On the other hand, in the second processing station 204, as shown in FIG. 31 and FIG. 32, similar to the first processing station 203, a first processing unit for performing liquid processing on the wafer W near the normal temperature on the front side. As a group, a first development processing unit group 213c and a second development processing unit group 213d are arranged. The first development processing unit group 213c is configured by stacking development processing units (DEV) 226 in two stages in the Z-axis direction, and the second development processing unit group 213d is similarly configured by the development processing unit (DEV) 226 in the Z-axis direction. Are stacked in two stages.

  In the center of the second processing station 204, a third heating / temperature adjustment processing unit group 214c and a fourth heating / temperature adjustment processing unit group 214d are arranged as a second processing unit group with the transfer device 219b interposed therebetween. ing. In the third heating / temperature adjustment processing unit group 214c, the third heating / temperature adjustment processing units 210c are stacked in seven stages in the Z-axis direction, and a transport unit (STL) to be described later is arranged below them. . The fourth heating / temperature control processing unit group 214d is configured by stacking eight fourth heating / temperature control processing units 210d in the Z-axis direction in eight stages.

  The third and fourth heating / temperature control units 210c and 210d include temperature control units (CPL) 218c and 218d for performing temperature control on the wafer W, and a heat processing unit (HP) 220c for performing heat processing on the wafer W, 220d are integrally formed adjacent to each other. Then, as shown in FIG. 31, the temperature control processing unit (CPL) 218c of the temperature control processing unit (CPL) 218c and the heat processing unit (HP) 220c of all the third heating / temperature control processing units 210c stacked. However, the third heating / temperature adjustment processing unit group 214c and the first development processing unit (DEV) group 213c are arranged so as to be located on the first development processing unit (DEV) group 213c side. In addition, the temperature control processing unit (CPL) 218d of the temperature control processing unit (CPL) 218d and the heat processing unit (HP) 220d of all the stacked fourth heating / temperature control processing units 210d is connected to the second development processing unit. A fourth heating / temperature control processing unit group 214d and a second development processing unit (DEV) group 214d are arranged so as to be located on the (DEV) group 213d side.

  A first development processing unit group 213c, a second development processing unit group 213d, and third and fourth heating / temperature control processing unit groups 214c and 214d are arranged around the vertical transportation type transfer device 219b. Then, transfer of the wafer W between the third heating / temperature control processing unit group 14c and the first development processing unit (DEV) group 213c, the fourth heating / temperature control processing unit group 214d and the second development processing unit ( The transfer of the wafer W to and from the DEV) group 213b is performed by the transfer device 219b. Further, shutter members 247a and 247b that can be opened and closed are provided on both side surfaces of the temperature control processing unit (CPL) 218d of the fourth heating / temperature control processing unit 210d. The transfer of the substrate between the fourth heating / temperature control unit 210d and the transfer device 219b and the transfer of the substrate between the fourth heating / temperature control unit 210d and the wafer transfer body 237 are performed by the shutter 247a, 247b. Further, a shutter member 247b which can be opened and closed is provided on a side surface of the temperature control processing unit 218b of the third heating / temperature control unit 210c on the side of the transfer device, and the shutter device 247b and the transfer device 219b are controlled via the shutter member 247b. Delivery of the substrate to and from the processing unit 218c is performed.

  As shown in FIG. 31, on the back side of the first processing station 203 and the second processing station 204, a chemical tower 215 used for the inspection machine 206 and the first processing unit group 213a for storing the processing liquid is housed. Container shelves are provided. This container shelf can be moved along the Y direction in the drawing by the rail 207. The container shelf has, for example, a structure like a door that can be opened and closed on the back side, and the door can accommodate the container. This makes it easy to replace and maintain the container. The inspection machine 206 is for inspecting the thickness of the coating film on the wafer W that has been exposed and developed, and is installed as necessary. Further, as the processing liquid, for example, an anti-reflection film resist material supplied to the anti-reflection film application unit (BARC) 216, a resist film material supplied to the resist film application unit (CT) 217, and supplied to the development processing unit 226 There is a developing solution. Here, the processing liquid stored in the chemical tower 215 disposed on the rear side may be used as a main processing liquid source, or the chemical tower 215 disposed on the rear side may be disposed as a spare for other areas. Another chemical tower may be arranged and used as a main processing liquid source.

  In the interface unit 205, a buffer cassette 233 having, for example, a structure similar to that of the wafer W cassette C, which temporarily holds the wafer W before exposure, is disposed on the front side thereof, and a peripheral exposure device 234 is disposed on the rear side thereof. . Then, the wafer transfer body 237 which can be moved up and down in the vertical direction and further rotatable in the θ direction can be moved along the transfer path 236 between the buffer cassette 233 and the peripheral exposure device 234. The wafer transfer body 237 is configured to be able to access the temperature control unit (CPL) 218d, the buffer cassette 233, the peripheral exposure device 234, and the pre-exposure temperature control unit (not shown) of the fourth heating / temperature control unit 210d. Have been.

  Further, in this coating and developing processing system 201, as shown in FIGS. 31 and 33, a first processing unit group 213 (an anti-reflection film coating unit (BARC) group 213a, a resist film coating unit) in the first processing station 203. (CT) group 213b) and second processing unit group 214 (first and second heating / temperature control processing unit groups 214a and 214b), and first processing unit group 213 (second processing station 204). Between the first and second development processing unit groups 213c and 213d) and the second processing unit group 214 (third and fourth heating / temperature control processing unit groups 214c and 214d), a heat insulating wall 239 and a later-described unit are respectively provided. A passage 240 for circulating gas exhausted from a lower part of the first processing unit group 213 to an upper part thereof is arranged. That is, the heat insulating wall 239 and the passage 240 are arranged so as to separate the first processing unit group 213 and the second processing unit group 214 from each other.

  As shown in FIG. 32, in the above-described anti-reflection film coating unit (BARC) group 213a, the wafer W is placed on a spin chuck in a cup to apply an anti-reflection film, and the wafer W is coated with an anti-reflection film. An anti-reflection coating unit (BARC) 216 to be processed is stacked in three stages.

  In the resist coating unit group 213b, a resist coating unit (CT) for applying a resist liquid by placing the wafer W on a spin chuck in a cup and performing a resist coating process on the wafer W is stacked in three stages. .

  In the first development processing unit group 213c, a development processing unit (DEV) 226 that places a wafer W on a spin chuck in a cup to supply a developer and performs development processing on the wafer W is provided in two stages from the top. Stacked.

  Similarly, in the second development processing unit group 213d, the development processing unit (DEV) 226 that supplies the developing solution by placing the wafer W on the spin chuck in the cup and performs the development processing on the wafer W is arranged from above. Stacked in two tiers.

  In the second and third heat / temperature control unit groups 214b and 214c, the heat / temperature control units 210 are stacked in seven stages, and a transfer unit (STL) 238b is further disposed below these units as shown in FIG. , 238c are arranged respectively. The transfer of the wafer W between the first and second processing stations 203 and 204 is performed via a communication path 242 that connects the two transfer units (STLs) 238b and 238c. As shown in FIG. 34, the transport units (STL) 238b, 238c are provided with openings, respectively, and shutter members 248a, 248b, 249a, 249b that can be opened and closed corresponding to the openings are provided. By opening and closing the shutter members 248a and 249b, the transfer of the wafer W is performed between the transfer units (STL) 238b and 238c and the corresponding transfer devices 219a and 219b. By opening and closing the shutter members 248b and 249a, the transfer of the wafer W between the transfer units (STL) 238b and 238c, that is, the transfer of the wafer W between the first and second stations, is performed via the communication path 242. Done.

  Next, the above-described transport devices 219a and 219b will be described with reference to FIG. 35 which is a perspective view. The above-described transport devices 219a and 219b have the same structure, and are described as reference numeral 219 in FIG.

  As shown in FIG. 35, the transport device 219 moves up and down in the vertical direction (Z direction) inside a cylindrical support 253 composed of integral walls 251 and 252 connected to each other at the upper end and the lower end. A flexible wafer W transfer means 254 is provided. The cylindrical support 253 is connected to a rotation shaft of a motor 255, and rotates integrally with the wafer W transfer means 254 about the rotation shaft by the rotation driving force of the motor 255. Therefore, the wafer W transfer means 254 is rotatable in the θ direction.

  On the transfer base 256 of the wafer W transfer means 254, a plurality of, for example, two tweezers 257 and 258 for holding the wafer W are provided vertically. Each of the tweezers 257 and 258 has basically the same configuration, and has a shape and size that allow it to pass through a side opening between the two walls 251 and 52 of the cylindrical support 253. The tweezers 257 and 258 can be freely moved in the front-rear direction by a motor (not shown) built in the transfer base 256.

  Next, the structure of the above-described first heating / temperature adjustment processing unit 210a will be described with reference to FIGS. 34, 36, and 37. FIG. 36 is a plan view of the heating / temperature control unit, and FIG. 37 is a cross-sectional view of the heating / temperature control unit.

  As shown in FIGS. 36 and 37, the first heating / temperature control processing unit 210a includes a heat processing unit (HP) 220a that performs heat processing on the wafer W and a temperature control process that performs temperature control on the wafer W. A unit (CPL) 218a is adjacent to each other and integrated.

  The heat treatment unit (HP) 220a has a hot plate 224 that can be set at a temperature around 200 ° C. Further, the heat processing unit (HP) 220a surrounds the wafer W around the gate shutter 221 and the hot plate 224 for opening and closing between the heat processing unit (HP) 220a and the temperature control processing unit (CPL) 218a. A ring shutter 222 that moves up and down together with the gate shutter 221 is provided. The heating plate 224 is provided with three lift pins 223 for placing the wafer W thereon and moving it up and down. Note that a shielding plate screen may be provided between the hot plate 223 and the ring shutter 222. An elevating mechanism 227 for elevating the three lift pins 223 and an elevating mechanism 228 for elevating the ring shutter 222 together with the gate shutter 221 are provided below the heat treatment chamber 220a. On the hot plate 223, a proximity pin 235 having a height of 0.2 mm and a guide 232 are provided.

  The temperature control unit (CPL) 218a has a temperature control plate 225 that controls the temperature of the wafer W to a normal temperature of about 23 ° C. As shown in FIGS. 34 and 36, an opening for transferring the wafer W to and from the cassette station 2 is provided on the side of the temperature control processing unit (CPL) 218a on the cassette station side. A shutter member 247a that can be opened and closed is disposed corresponding to each part. Further, an opening for transferring the wafer W to and from the transfer device 219 is provided on a side of the temperature control processing unit (CPL) 218a on the transfer device 219 side, and can be opened and closed corresponding to the opening. A simple shutter member 247b is arranged.

  As shown in FIG. 37, the heat processing unit (HP) 220a and the temperature control processing unit (CPL) 218a are connected through a communication port 230, and the temperature for mounting the wafer W and controlling the temperature is set. The adjusting plate 225 is configured to be movable in the horizontal direction along the guide plate 259 by the moving mechanism 260. Thereby, the temperature control plate 225 can enter the heating processing unit (HP) 220a through the communication port 230, and the wafer W after being heated by the heating plate 224 in the heating processing unit (HP) 220a. Is received from the lift pins 223 and is carried into the temperature control processing unit (CPL) 218a to control the temperature of the wafer W.

  In the above, the first heating / temperature adjustment processing unit 210a has been described, but the fourth heating / temperature adjustment processing unit 210d of the fourth heating / temperature adjustment processing unit group 214d has the same structure. Also, the second heating / temperature adjustment processing unit 210b and the third heating / temperature adjustment processing unit 210c have substantially the same structure as the first heating / temperature adjustment processing unit 210a, however, FIGS. 31 and 34. As shown in FIG. 7, the first heating and temperature control processing unit 210a has shutter members 247a and 247b on both sides, whereas the second and third heating and temperature control processing units 210b and 210c have a transfer device 219. The difference is that the shutter member 247a or 247b is provided only on the side surface on the side. In the present embodiment, in the temperature control processing units (CPL) 218a, 218d, the opening / closing drive is performed so that both the sitter members 247a, 247b are not opened. That is, the opening is closed by the shutter member 247b when opened by the shutter member 247a, and the opening is closed by the shutter member 247a when opened by the shutter member 247b. By controlling the opening and closing drive of the shutter members 247a and 247b in this manner, the temperature control processing unit (CPL) performs a function like a load lock chamber, and performs processing on the wafer W near normal temperature. The temperature control in the processing liquid supply unit (BARC, CT, DEV) can be performed more precisely.

  As described above, in the present embodiment, the insulating wall 239 and the first processing unit are disposed between the first processing unit groups 213a, 213b, 213c, 213d and the second processing unit groups 214a, 214b, 214c, 214d, respectively. A temperature control mechanism provided with a passage 240 for circulating gas exhausted from the lower part of the unit group 213 to the upper part thereof is provided. This temperature control mechanism will be described below with reference to FIG. FIG. 38 is a schematic sectional view of a first processing unit group 213a in which a processing liquid supply unit, here, an antireflection film coating unit (BARC) 216 is stacked in a plurality of stages.

  As shown in FIG. 38, the temperature of the anti-reflection film coating unit (BARC) group 213a as the first processing unit group in the first processing station 203 is controlled from the upper side in the upper part of the coating and developing processing system 201. A clean air supply unit 241 that supplies clean air is provided. The clean air supply unit 241 includes an FFU (fan filter unit) and a temperature controller for adjusting the temperature and humidity, and the like, and the gas exhausted from the lower part of the anti-reflection film coating unit (BARC) group 213a is placed on the upper part. The clean air from which particles and the like have been removed by adjusting the temperature and humidity from the gas flowing in through the passage 240 for circulation is supplied to each antireflection film coating unit (BARC) 216 through the passage 243. Further, as shown in FIG. 31, a stepped heat wall 239 is disposed between the passage 240 and the heating / temperature control processing unit 210a as the second processing unit group. In the present embodiment, by providing the heat insulating wall and the temperature control mechanism in this manner, the temperature control in the processing liquid supply units (BARC, CT, DEV) for performing processing on the wafer W at around normal temperature is more precise. Can be done. Similarly, as shown in FIG. 31, the clean air supply unit 240 is also provided between the first processing unit group 213b, 213c, 213d and the corresponding heating / temperature control processing unit group 214b, 214c, 214d. The heat insulating walls 239 are provided separately from each other.

  Next, processing steps in the coating and developing processing system 201 configured as described above will be described.

  In the coating and developing processing system 201, the unprocessed wafer W accommodated in the cassette C is taken out by the wafer carrier 211 of the cassette station 202, and then the first heating / temperature control heat treatment unit 210 a of the first processing station 203. Is transferred into a temperature control unit (CPL) 218a, and is placed on a temperature control plate 225 to perform a temperature control process.

  The wafer W subjected to the temperature control processing in the temperature control processing unit (CPL) 218a is transferred by the transfer device 219a into the antireflection film coating unit (BARC) 216 in the antireflection film coating unit (BARC) group 213a, A treatment liquid for an anti-reflection film is applied.

  The wafer W to which the processing liquid for the anti-reflection film is applied by the anti-reflection film coating unit (BARC) 216 is transferred by the transfer device 219a into the temperature control processing unit (CPL) 218a of the first heating / temperature control processing unit 210a. And placed on the temperature control plate 225. As shown in FIG. 37, the wafer W placed on the temperature control plate 225 is moved horizontally by the moving mechanism 260 to the heat treatment unit (HP) 220a through the communication port 230 by the temperature control plate 225. Conveyed. The transferred wafer W is supported by the lift pins 223 in the raised state. Thereafter, the lift pins 223 are lowered, the wafer W is placed on the hot plate 224, and at the same time, the ring shutter 222 and the gate shutter 221 are raised to perform a heat treatment in a heat treatment space formed. After the heat treatment, the lift pins 223 are raised, the ring shutter 222 and the gate shutter 221 are lowered, and the wafer W is separated from the hot plate 224 and supported by the lift pins 223.

  Thereafter, the temperature control plate 225 is inserted again into the heat processing unit (HP), and receives the wafer W subjected to the heat processing. The wafer W is transferred by the temperature control plate 225 into the temperature control processing unit (CPL) 218a, where the temperature control process is performed.

  The wafer W that has been subjected to the temperature control processing by the temperature control processing unit (CPL) 218a is transferred by the transfer device 219a into the resist coating unit (CT) 217 in the resist coating unit group 213b, where the resist liquid is applied.

  The wafer W coated with the resist solution by the resist coating unit (CT) 217 is transferred by the transfer device 219a into the temperature control unit (CPL) 218b of the second heating / temperature control unit 210b, and the temperature control plate 225 is used. Placed on top. The wafer W placed on the temperature control plate 225 is transferred into the heat treatment unit (HP) 220b through the communication port 230 by the temperature control plate 225 horizontally moved by the moving mechanism 260. The transferred wafer W is supported by the lift pins 223 in the raised state. Thereafter, the lift pins 223 are lowered, the wafer W is placed on the hot plate 224, and at the same time, the ring shutter 222 and the gate shutter 221 are raised to perform a heat treatment in a heat treatment space formed. After the heat treatment, the lift pins 223 are raised, the ring shutter 222 and the gate shutter 221 are lowered, and the wafer W is separated from the hot plate 224 and supported by the lift pins 23.

  Thereafter, the temperature control plate 225 is inserted again into the heat processing unit (HP) 220b, and receives the wafer W subjected to the heat processing. The wafer W is transferred by the temperature control plate 225 into the temperature control processing unit (CPL) 218b, where the temperature control process is performed.

  The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 218b is transferred by the transfer device 219a to the transfer unit (STL) 238b arranged at the lowermost stage of the second heating / temperature control processing unit group 214b. Then, it is transported through the communication path 242 to the transport unit (STL) 238c of the third heating / temperature control processing unit group 214c.

  The wafer W transferred to the transfer unit (STL) in the third heating / temperature adjustment processing unit group 214c is subjected to the temperature adjustment processing of the heating / temperature adjustment processing unit 210d of the fourth heating / temperature adjustment processing unit group 214d by the transfer device 219b. Conveyed to the unit.

  Further, the wafer W transported to the temperature control processing unit is transported into the peripheral exposure device 234 by the wafer transporter 237 in the interface unit 205, and the peripheral exposure is performed.

  The wafer W subjected to the peripheral exposure by the peripheral exposure device 234 is transferred to the buffer cassette 233 by the wafer transfer body 237 and temporarily held therein, or the wafer transfer body 237, a pre-exposure temperature control unit (not shown), The wafer is transferred to an exposure apparatus (not shown) via a wafer transfer body.

  Here, for example, two buffer cassettes 233 are provided, and one can be used as a cassette for holding the wafer W after the peripheral exposure, and the other can be used as a cassette for holding the wafer W before the peripheral exposure. . At this time, it is desirable to provide a mechanism for controlling the temperature of the wafer W to a normal temperature of about 23 ° C. in the cassette holding the wafer W before the peripheral exposure. Alternatively, the buffer cassette 233 holds only the wafer W after the peripheral exposure, and the wafer W before the peripheral exposure is empty among the heating / temperature control processing units 210c or 210d of the second processing unit group 214c or 214d. The temperature control processing unit 218c or 218d can also be used as a place for waiting the wafer W before the peripheral exposure. In this case, there is no need to provide a buffer cassette for holding the wafer W before the peripheral exposure.

  Next, the wafer W that has been subjected to the exposure processing by the exposure device is transferred from the interface unit 205 to the fourth heating / temperature control processing unit of the second processing station 204 via the wafer carrier, the buffer cassette 233, and the wafer carrier 237. The group is conveyed into the temperature control unit (CPL) 218d of the fourth heating / temperature control unit 210d in the group 214d, and the temperature control process is performed.

  The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 218d is transferred by the transfer device 219b to the development processing unit (DEV) 226 in the first development processing unit group 213c or the second development processing unit group 213d. , A developing process is performed.

  The wafer W that has been subjected to the development processing by the development processing unit (DEV) 226 is transferred by the transfer device 219b, for example, to the temperature control processing unit (CPL) of the heating / temperature control processing unit 210c in the third heating / temperature control processing unit group 214c. The heat treatment unit (CPL) 218c is conveyed via the heat treatment unit (HP) 220c via the heat treatment unit (HP) 220c via the heat treatment unit 218c, and heat treatment is performed.

  The wafer W subjected to the heat treatment in the heat treatment unit (HP) 220c is transferred to the temperature control processing unit 218c, transferred to the transfer unit (STL) 238c in the second processing station 204 by the transfer device 219b, and communicated with the communication path 242. Through the transport unit (STL) 238b in the first processing station 203.

  The wafer W transferred to the transfer unit (STL) is transferred by the transfer device 219a to the temperature control processing unit 218a of the first heating and temperature control processing unit 210a in the first heating and temperature control processing station group 214a. Then, the wafer W in the temperature control processing unit 218a is accommodated in the cassette C by the wafer carrier 211 of the cassette station 202. Here, when the inspection machine 206 is installed, the wafer W in the temperature control processing unit 218a is transferred to the inspection machine 206 by the wafer transfer body 211 of the cassette station 202. The inspection device 206 determines whether the width of the pattern obtained by the exposure and development processing is appropriate by measuring the thickness of the resist film. The inspected wafer W is accommodated in the cassette C by the wafer carrier 211 of the cassette station 202.

  According to the coating and developing processing system according to the present embodiment configured as described above, the temperature control processing unit (CPL) of the heating / temperature control processing unit is disposed on the liquid processing unit side, so that the liquid processing unit The temperature control unit (CPL) is interposed between the heat treatment unit (HP) and the heat treatment unit (HP). Thereby, the thermal influence from the heat processing unit on the liquid processing unit side can be suppressed as much as possible. Therefore, in the coating and developing processing system, the temperature control in the liquid processing units (BARC, CT, DEV) for performing the liquid processing on the wafer W can be performed precisely.

  Further, according to the coating and developing processing system according to the present embodiment, the liquid processing unit group (the anti-reflection film coating unit (BARC) group 213a, the resist film coating unit (CT)) in the first and second processing stations 203 and 204 is used. Group 213b, the first development processing unit group 213c, the second development processing unit group 213d) and the heating / temperature control processing unit group (first to fourth heating / temperature control unit groups 214a, 214b, 214c, 214d). Between the heat insulating wall 239 and the liquid processing unit groups 213a, 213b, 213c, 213d, passages 240 for circulating the gas exhausted from the lower part thereof to the upper part thereof are arranged. As a result, the passage 240 also has a function of a heat insulating means, so that a double heat insulating means is disposed between the first processing unit group 213 and the second processing unit group 214, and further, the liquid processing unit group Therefore, the thermal influence of the heat processing unit of the heating / temperature control processing unit on the wafer W can be suppressed, and the temperature control in the liquid processing unit group that performs the liquid processing on the wafer W at around normal temperature can be performed extremely accurately.

  Next, a fifth embodiment of the present invention will be described with reference to FIGS. 39 to 41 are diagrams showing a coating and developing processing system according to an embodiment of the present invention, FIG. 39 is a plan view, and FIG. 40 is a front view. FIG. 41 is a cross-sectional view taken along the line AA ′ of FIG. 39. FIG. 41 illustrates a positional relationship in the X direction of the first processing unit group 213a, the second processing unit group 214a, and the chemical tower 215a. FIG.

  This embodiment is different from the above-described fourth embodiment in that the arrangement of the chemical tower for storing the processing liquid is different from that in the fourth embodiment in that the number of heating / temperature control processing devices disposed between the two transfer devices 219a and 219b is one. One is structurally different. Hereinafter, a fifth embodiment will be described, but a description of a structure similar to that of the fourth embodiment will be partially omitted. The same components as those in the fourth embodiment are denoted by the same reference numerals and described.

  As shown in FIG. 39, the coating and developing processing system 201 includes a cassette station 202 similar to that of the fourth embodiment, and various single-wafer processing units for performing a predetermined process on a wafer W in the coating and developing process. , A second processing station 209 disposed adjacent to the first processing station, and an exposure processing disposed adjacent to the second processing station 209. It has a configuration in which an interface unit 205 for transferring a wafer W between apparatuses (not shown) is integrally connected. In the first processing station 208, coating processing of an antireflection film and a resist film is mainly performed on the wafer W, and in the second processing station 209, development processing of the exposed resist film is performed.

  Since the cassette station 202 has the same structure as that of the fourth embodiment, the description is omitted.

  As shown in FIGS. 39 and 40, in the first processing station 208, as a first processing unit group for performing liquid processing on the front side, an anti-reflection film coating unit (BARC) group 213a and a resist film coating unit ( CT) group 213b. The antireflection film coating unit (BARC) group 213a is configured by stacking three layers of antireflection film coating units (BARC) 216 that perform coating processing on the wafer W at around normal temperature in the Z-axis direction. The resist film applying unit (CT) group 213b is configured by stacking three resist film applying units (CT) 217 that perform an application process on the wafer W at around room temperature in the Z-axis direction. Further, chemical towers 215a and 215b are arranged adjacent to the antireflection film application unit (BARC) group 213a and the resist film application unit (CT) group 213b, respectively. The chemical tower 215a contains an anti-reflective coating material supplied as a processing liquid to the anti-reflection coating unit (BARC) 216, and the chemical tower 215b is supplied as a processing liquid to the resist coating unit (CT) 217. Resist material.

  On the back side of the first processing station 208, a first heating / temperature control processing unit group 214a and a second heating / temperature control processing unit group 214b are disposed as a second processing unit group with the transfer device 219a interposed therebetween. ing. The first heating / temperature adjustment processing unit group 214a and the second heating / temperature adjustment processing unit group 214b are arranged adjacent to the chemical towers 215a, 215b, respectively. The first heating / temperature control processing unit group 214a includes first heating / temperature control processing units 210a stacked in eight stages in the Z-axis direction. The second heating / temperature adjustment processing unit group 214b is configured by stacking eight second heating / temperature adjustment processing units 210b in the Z-axis direction. Each of the first and second heating / temperature control units 210a and 210b includes a temperature control unit (CPL) 218a and 218b for performing temperature control on the wafer W and a heat processing unit (HP) 220a and a heat processing unit (HP) 220a for performing heat processing. 220b are integrally formed adjacent to each other.

  As shown in FIG. 41, the first heating / temperature adjustment processing unit group 214a is configured by stacking the first heating / temperature adjustment processing units 210a in multiple stages. FIG. 41 is a cross-sectional view taken along line AA ′ of FIG. 39, and shows a first processing unit group 213a, a chemical tower 215a, and a second processing unit group 214a along the X direction. FIG. 6 is a diagram showing a positional relationship with the dashed line. As shown in FIG. 39 and FIG. 41, the first heating / temperature adjustment processing unit group 214a as the second processing unit group is configured by stacking the first heating / temperature adjustment processing units 210a in eight stages. In the first heating / temperature control processing unit 210a, the temperature control processing unit (CPL) 218a of the heat processing unit (HP) 220a and the temperature control processing unit (CP) 218a is disposed on the chemical tower 215a side as a processing liquid supply unit. Be placed. Then, an antireflection film coating unit group 213a as a first processing unit group is disposed adjacent to the chemical tower 215a. Similarly, the second heating / temperature adjustment processing unit group 214b is configured by stacking the second heating / temperature adjustment processing units 210b in eight stages, and the heating processing in all the first heating / temperature adjustment processing units 210b is performed. The temperature control processing unit (CPL) 218b of the unit (HP) 220b and the temperature control processing unit (CP) 218b is disposed on the chemical tower 215b side as a processing liquid supply unit. Then, a resist film coating unit group 213b as a first processing unit group and a first development processing unit group 213c described later are arranged adjacent to the chemical tower 215b.

  An anti-reflection film coating unit (BARC) group 213a, a resist film coating unit (CT) group 213b, and first and second heating / temperature control unit groups 214a and 214b are arranged around the vertical transfer type transfer device 219a. Have been. The structures of the transport device 219a, the antireflection film coating unit (BARC) group 213a, the resist film coating unit (CT) group 213b, and the first heating / temperature control processing unit group 214a in the first processing station 208 are the same as those in the fourth embodiment. The configuration is the same as that of the first processing station 203 in the embodiment and each component, and a detailed description is omitted here. The second heating / temperature adjustment processing unit group 214b in the present embodiment is different from the second heating / temperature adjustment processing unit group 214b in the fourth embodiment in that shutter members 247a and 247b are provided on both side surfaces. The structure is different in that there is no transfer unit (STL). In the present embodiment, the transfer of the wafer W between the first processing station 208 and a second processing station 209, which will be described later, is performed by the second heating / temperature control of the second heating / temperature control unit group 214b. This can be performed via the temperature control processing unit 218b of the processing unit 210b. Therefore, shutter members 247a and 247b are provided on both side surfaces of each temperature control processing unit 218b.

  On the other hand, in the second processing station 209, as shown in FIGS. 39 and 40, similar to the first processing station 208, a first processing unit for performing liquid processing on the wafer W near the normal temperature on the front side. As a group, a first development processing unit group 213c and a second development processing unit group 213d are arranged. The first development processing unit group 213c is configured by stacking development processing units (DEV) 226 in two stages in the Z-axis direction, and the second development processing unit group 213d is similarly configured by the development processing unit (DEV) 226 in the Z-axis direction. Are stacked in two stages. Further, a chemical tower 215c is arranged adjacent to the second development processing unit group 213d. The chemical tower 215c contains a developing solution supplied as a processing solution to the developing unit (DEV) 226.

  A third heating / temperature adjustment processing unit group as a second processing unit group is provided at a position opposite to the second heating / temperature adjustment processing unit group 210b with the transfer device 219b interposed therebetween on the back surface of the second processing station 209. 214c are arranged. The third heating / temperature control unit group 214c is arranged adjacent to the chemical tower 215c. The third heating / temperature adjustment processing unit group 214c is configured by stacking eight third heating / temperature adjustment processing units 210c in the Z-axis direction.

  In the third heating / temperature control unit 210c, a temperature control unit (CPL) 218c, 218d for performing temperature control on the wafer W and heat processing units (HP) 220c, 220d for performing heat processing are adjacent to each other. It is configured integrally. Then, as shown in FIG. 39, the temperature control processing unit (CPL) 218c of the temperature control processing unit (CPL) 218c and the heat processing unit (HP) 220c of all the stacked third heating / temperature control processing units 210c. Is disposed on the side of the chemical tower 215c as a processing liquid supply unit. Then, a second developing processing unit (DEV) group 213d as a first processing unit group is arranged adjacent to the chemical tower 215c.

  A first development processing unit group 213c, a second development processing unit group 213d, and second and third heating / temperature control processing unit groups 214b and 214c are arranged around the vertical transportation type transfer device 219b. Here, the second heat / temperature control unit group 214b can cope with any of the heat process or the temperature control process before and after the formation of the coating film on the wafer, and the heat process or the temperature control process before and after the development process. . Then, the transfer of the wafer W between the second heating / temperature adjustment processing unit group 214b and the third heating / temperature adjustment processing unit group 214c, and the second heating / temperature adjustment processing unit group 214b and the first or second development. Transfer of the wafer W between the processing unit (DEV) groups 213c and 213d, and transfer between the third heating / temperature control processing unit group 214c and the first or second developing processing unit (DEV) group 213c and 213d. The transfer of the wafer W is performed by the transfer device 219b. The transfer of the wafer W between the second or third heat / temperature control unit group 214b, 214c and the transfer device 219b is performed via 247b, 247a provided in each temperature control unit 218b, 218c. Be done. The transfer of the wafer W between the temperature control unit 218b of the third heating / temperature control unit 210c and the wafer carrier 237 is performed via the shutter member 247b of the temperature control unit 218c.

  The interface unit 205 has the same structure as the interface unit 205 in the above-described fourth embodiment, and a description thereof will not be repeated.

  Further, in this coating and developing processing system 1, as shown in FIGS. 39 and 41, the first processing unit group 213 (the anti-reflection film coating unit (BARC) group) in the first processing station 208 and the second processing station. 213a, a resist film coating unit (CT) group 213b, a first development processing unit (DEV) group 213c, a second development processing unit (DEV) group 213d) and a second processing unit group 214 (first heating / temperature control processing). A chemical tower 215 (215a, 215b, 215c) is arranged between the unit group 214a, the second heating / temperature adjustment processing unit group 214b, and the third heating / temperature adjustment processing unit group 214c. Between the chemical tower 215 and the second processing unit group 214, the heat insulating wall 239 and the first processing unit group 213 A passage 240 for circulating the evacuated gas to the upper part are arranged from the part. In addition, the passage 240 and the heat insulating wall 239 provided adjacent to the chemical tower 215b function as a temperature control mechanism and a heat insulating means for the two first processing unit groups 214a corresponding to the one second processing unit group 214b. I do. In the present embodiment, as in the above-described fourth embodiment, a clean air supply unit that supplies clean air temperature-controlled from above to each first processing unit group is provided above the coating and developing system. Are located. The clean air supply unit includes an FFU (fan filter unit) and a temperature control device for adjusting temperature and humidity, and a passage for circulating gas exhausted from a lower part of the first processing unit group to an upper part thereof. Clean air from which particles and the like have been removed by adjusting the temperature and humidity from the gas flowing through 240 is supplied to the first processing unit group through the passage 243. Also in the present embodiment, similarly to the above-described fourth embodiment, a temperature control in which a passage 240 for circulating gas exhausted from the lower part of the heat insulating wall 239 and the first processing unit group 213 to the upper part thereof is arranged. By providing the mechanism, it is possible to precisely control the temperature in the processing liquid supply unit (BARC, CT, DEV) for performing processing on the wafer W at around normal temperature. Further, since the passage 240 also has a function of a heat insulating means, the heat insulating wall 239 and the passage 240 are provided between the second processing unit group 214 and the chemical tower 215 so that the double heat insulating means is provided. Become. Therefore, the temperature control in the liquid processing unit group that performs liquid processing on the wafer W at around normal temperature can be performed extremely precisely, and the processing liquid contained in the chemical tower 215 is not affected by the thermal influence of the heat processing unit 220. And the temperature of the processing solution is easily adjusted.

  As shown in FIG. 40, in the above-described anti-reflection film coating unit (BARC) group 213a, a wafer W is placed on a spin chuck in a cup to apply an anti-reflection film, and the wafer W is coated with an anti-reflection film. An anti-reflection coating unit (BARC) 216 to be processed is stacked in three stages. In the resist coating unit group 213b, a resist coating unit (CT) for applying a resist liquid by placing the wafer W on a spin chuck in a cup and performing a resist coating process on the wafer W is stacked in three stages. . In the first development processing unit group 213c, a development processing unit (DEV) 226 that places a wafer W on a spin chuck in a cup to supply a developer and performs development processing on the wafer W is provided in two stages from the top. Stacked. Similarly, in the second development processing unit group 213d, the development processing unit (DEV) 226 that supplies the developing solution by placing the wafer W on the spin chuck in the cup and performs the development processing on the wafer W is arranged from above. Stacked in two tiers.

  In the first, second, and third heating / temperature control processing unit groups 214a, 214b, and 214c, a heat processing unit (HP) 220 that performs heat processing on the wafer W and a temperature control processing on the wafer W, respectively. A heating / temperature control processing unit 210 in which a temperature control processing unit (CPL) 218 and a temperature control processing unit (CPL) 218 are integrated next to each other is integrated and stacked in eight stages, and the shutters are provided on the side surfaces of all the temperature control processing units as described above. Members 247a and 247b are provided. Note that the structure of the heating / temperature control processing unit 210 in this embodiment is the same as that of the above-described fourth embodiment, and a description thereof will be omitted.

  The structure of the transfer devices 219a and 219b described above is the same as that of the transfer devices 219a and 219b of the above-described fourth embodiment, and thus the description is omitted.

  Next, processing steps in the coating and developing processing system 201 configured as described above will be described. Note that the operation of the heating / temperature control unit is the same as that of the above-described fourth embodiment, and will not be described.

  In the coating and developing processing system 201, the unprocessed wafer W accommodated in the cassette C is taken out by the wafer carrier 211 of the cassette station 202, and then the first heating / temperature control heat treatment unit 210 a of the first processing station 203. Is transferred into a temperature control unit (CPL) 218a, and is placed on a temperature control plate 225 to perform a temperature control process.

  The wafer W subjected to the temperature control processing in the temperature control processing unit (CPL) 218a is transferred by the transfer device 219a into the antireflection film coating unit (BARC) 216 in the antireflection film coating unit (BARC) group 213a, A treatment liquid for an anti-reflection film is applied.

  The wafer W to which the processing liquid for the anti-reflection film is applied by the anti-reflection film coating unit (BARC) 216 is transferred by the transfer device 219a into the temperature control processing unit (CPL) 218a of the first heating / temperature control processing unit 210a. And placed on the temperature control plate 225. The wafer W placed on the temperature control plate 225 is transported into the heat processing unit (HP) 220a and subjected to heat processing.

  Thereafter, the wafer W is transferred into the temperature control processing unit (CPL) 218a, where the temperature control processing is performed.

  The wafer W that has been subjected to the temperature control processing by the temperature control processing unit (CPL) 218a is transferred by the transfer device 219a into the resist coating unit (CT) 217 in the resist coating unit group 213b, where the resist liquid is applied.

  The wafer W to which the resist liquid has been applied by the resist coating unit (CT) 217 is transferred by the transfer device 219a into the temperature control unit (CPL) 218b of the second heating / temperature control unit 210b. Further, the wafer W is transferred into the heat processing unit (HP) 220b, where the heat processing is performed.

  After that, the wafer W is transferred into the temperature control processing unit (CPL) 218b, where the temperature control processing is performed. The wafer W subjected to the temperature adjustment processing by the temperature adjustment processing unit (CPL) 218b is transferred by the transfer device 219b to the temperature adjustment processing unit 218c of the heating / temperature adjustment processing unit 210c of the third heating / temperature adjustment unit group 214c. Is done.

  Further, the wafer W transported to the temperature control processing unit is transported into the peripheral exposure device 234 by the wafer transporter 237 in the interface unit 205, and the peripheral exposure is performed.

  The wafer W subjected to the peripheral exposure by the peripheral exposure device 234 is transferred to the buffer cassette 233 by the wafer transfer body 237 and temporarily held therein, or the wafer transfer body 237, a pre-exposure temperature control unit (not shown), The wafer is transferred to an exposure apparatus (not shown) via a wafer transfer body.

  Next, the wafer W that has been subjected to the exposure processing by the exposure apparatus is transferred from the interface unit 205 to the third heating / temperature control processing unit of the second processing station 209 via the wafer carrier, the buffer cassette 233, and the wafer carrier 237. The group is conveyed into the temperature control processing unit (CPL) 218c of the fourth heating / temperature control processing unit 210c in the group 214c, and the temperature control processing is performed.

  The wafer W subjected to the temperature control processing by the temperature control processing unit (CPL) 218c is transferred by the transfer device 219b to the development processing unit (DEV) 226 in the first development processing unit group 213c or the second development processing unit group 213d. , A developing process is performed.

  The wafer W that has been subjected to the development processing in the development processing unit (DEV2) 26 is transferred by the transfer device 219b to, for example, the temperature control processing unit (CPL) of the heating / temperature control processing unit 210b in the second heating / temperature control processing unit group 214b. The heat treatment unit (CPL2) 18b is conveyed via the heat treatment unit (HP) 220b via the heat treatment unit (HP) 220b via the heat treatment unit (CPL2) 18b to perform heat treatment.

  The wafer W that has been subjected to the heat treatment in the heat treatment unit (HP) 220b is transferred to the temperature control unit 218b, and is transferred by the transfer device 219a to the first heat / temperature control unit 210a in the first heat / temperature control station group 214a. Is transferred to the temperature control processing unit 218a. Then, the wafer W in the temperature control processing unit 218a is accommodated in the cassette C by the wafer carrier 211 of the cassette station 202.

  According to the coating and developing processing system according to the present embodiment configured as described above, the chemical tower as the processing liquid supply unit is disposed adjacent to the liquid processing unit (BARC, CT, DEV), and adjacent to the chemical tower. The heating and temperature control processing unit is disposed, and the temperature and temperature control processing unit (CPL) of the heating and temperature control processing unit is disposed on the chemical tower side. A temperature control unit and a chemical tower are interposed between the units. Thus, the thermal effect of the heat processing unit on the liquid processing unit side can be significantly suppressed. In the coating and developing system, the liquid processing units (BARC, CT, DEV) can be precisely controlled.

  Further, according to the coating and developing processing system according to the present embodiment, the liquid processing unit group (the anti-reflection film coating unit (BARC) group 213a, the resist film coating unit (CT) group 213b, and the first development processing unit (DEV) group) 213c, a second development processing unit (DEV) group 213d) and a heat / temperature control unit group (first to fourth heat / temperature control unit groups 214a, 214b, 214c, 214d). 39 and a passage 240 for circulating the gas exhausted from the lower part of each of the liquid processing unit groups 213a, 213b, 213c, 213d to the upper part thereof, further heat / temperature control processing unit for the liquid processing unit group. Liquid processing unit that performs thermal processing on wafers W at around room temperature while preventing thermal effects of the heat processing unit The temperature can be controlled very precisely in.

  Hereinafter, a sixth embodiment of the present invention will be described with reference to FIGS. 42 to 44 show a coating and developing system according to an embodiment of the present invention. FIG. 42 is a plan view and FIG. 43 is a front view. FIG. 44 is a cross-sectional view taken along the line BB ′ of FIG. 42, illustrating a positional relationship between the first processing unit group 213a and the second processing unit group 214a in the X direction. is there.

  The present embodiment is different from the above-described fourth embodiment in that the chemical tower for storing the processing liquid is disposed, the number of transfer devices and the number of heating / temperature control processing devices are small, and the anti-reflection film coating unit (BARC) is used. In addition, the structure is different in that the resist film coating units (CT) are stacked, and the entire system is reduced in size as compared with the fourth and fifth embodiments.

  Hereinafter, a sixth embodiment will be described, but a description of a structure similar to that of the fourth embodiment will be partially omitted. The same components as those in the fourth embodiment are denoted by the same reference numerals and described.

  As shown in FIG. 42, the coating and developing processing system 1 includes a cassette station 202 similar to the fourth embodiment, and various single-wafer processing units for performing a predetermined process on a wafer W in the coating and developing processing process. , A second processing station 246 disposed adjacent to the first processing station, and an exposure disposed adjacent to the second processing station 246. It has a configuration in which an interface unit 205 for transferring a wafer W between apparatuses (not shown) is integrally connected. In the first processing station 245, an antireflection film and a resist film are mainly applied on the wafer W, and in the second processing station 246, the exposed resist film is developed. A transfer device 219 is disposed substantially at the center of the coating and developing processing system 201, and the transfer device 219 is used to transfer the wafer W during processing in the first processing station 245 and the second processing station 246.

  Since the cassette station 202 has a structure substantially similar to that of the fourth embodiment, only different parts will be described. As shown in FIG. 43, a chemical tower 215b that accommodates a resist film material supplied as a processing liquid to a resist film coating unit (CT) 217 described below is disposed at the bottom of the cassette station 202.

  As shown in FIGS. 42 and 43, in the first processing station 245, an anti-reflection film / resist film coating unit (CT) group 213e is provided as a first processing unit group for performing liquid processing on the front side. ing. The anti-reflection / resist film application unit (CT) group 213e includes an anti-reflection film application unit (BARC) 216 and a resist film application unit (CT) 217, each of which performs a coating process on the wafer W at around normal temperature, each having two stages. It is configured to be stacked in the axial direction. Further, a chemical tower 215a is disposed adjacent to the anti-reflection / resist film coating unit (CT) group 213e. The chemical tower 215a contains an anti-reflection coating material supplied as a processing liquid to an anti-reflection coating unit (BARC) 216.

  On the back of the first processing station 245, a first heating / temperature control processing unit group 214a as a second processing unit group is disposed adjacent to the chemical tower 215a. The first heating / temperature adjustment processing unit group 214a is configured by stacking the first heating / temperature adjustment processing units 210a in multiple stages in the Z-axis direction. Each first heating / temperature control unit 210a includes a temperature control unit (CPL) 218a for performing temperature control on the wafer W and a heat processing unit (HP) 220a for performing heat processing, which are adjacent to each other and integrated. It is configured as

  As shown in FIG. 44, the first heating / temperature adjustment processing unit group 214a is configured by stacking the first heating / temperature adjustment processing units 210a in 12 layers. FIG. 44 is a cross-sectional view taken along a line BB ′ in FIG. 42, and shows a first processing unit group 213a, a second processing unit group 214a, and a chemical tower 215a along the X direction. It is a figure which shows the positional relationship of. As shown in FIGS. 42 and 44, the first heating / temperature adjustment processing unit group 214a is configured by stacking the first heating / temperature adjustment processing units 210a in 12 layers, and is disposed adjacent to the chemical tower 215a. I have. Further, in all the first heating / temperature control processing units 10a of the first heating / temperature control processing unit group 214a, the temperature control processing unit (CPL) of the heat processing unit (HP) 220a and the temperature control processing unit (CP) 218a. ) 218a are arranged on the chemical tower 215a side. An antireflection film / resist film application unit (CT) group 213e is arranged adjacent to the chemical tower 215a.

  On the other hand, in the second processing station 246, as shown in FIGS. 42 and 43, a development processing unit group 213f is disposed on the front side as a first processing unit group for performing liquid processing on the wafer W at around normal temperature. ing. The development processing unit group 213f includes development processing units (DEV) 226 stacked in four stages in the Z-axis direction. Further, a chemical tower 215c is arranged adjacent to the development processing unit group 213f. The chemical tower 215c contains a developing solution supplied as a processing solution to the developing unit (DEV) 226.

  On the back side of the second processing station 299, a second heating / temperature control processing unit group 214b is arranged adjacent to the chemical tower 215c. The second heating / temperature adjustment processing unit group 214b is configured by stacking the second heating / temperature adjustment processing units 210b in 212 stages in the Z-axis direction. Then, in all the second heating / temperature adjustment processing units 210b of the second heating / temperature adjustment processing unit group 214b, the temperature adjustment processing unit (CPL) of the heating processing unit (HP) 220b and the temperature adjustment processing unit (CP) 218b. ) 218b are arranged on the side of the chemical tower 215c. A development processing unit (DEV) group 213f is arranged adjacent to the chemical tower 215c.

  Around the vertical transfer type transfer device 219, an antireflection film / resist film coating unit (CT) group 213e, a development processing unit group 213f, and first and second heating / temperature control processing unit groups 214a and 214b are arranged. ing. The transfer of the wafer W between the unit groups is performed by the transfer device 219. Further, the transfer of the wafer W between the first heating / temperature control processing unit group 214a and the wafer transfer body 211, the transfer of the wafer W between the second heating / temperature control processing unit group 214b and the wafer transfer body 237, the first or the first The transfer of the wafer W between the second heating / temperature adjustment processing unit group 214a, 214b and the transfer device 219 is performed by the heating / temperature adjustment processing unit 210a, 210b of the first or second heating / temperature adjustment processing unit group 214a, 214b. This is performed via shutter members 247a and 247b provided on both side surfaces of the temperature control processing units 218a and 218b.

  The interface unit 205 has the same structure as the interface unit 205 according to the above-described fourth embodiment, and a description thereof will be omitted.

  In this coating and developing processing system 201, as shown in FIGS. 42 and 43, a first processing unit group 213 (an anti-reflection film / resist film coating unit (CT) group 213e, a developing processing unit group 213f) and a second processing unit group 213f A chemical tower 215 (215a, 215c) is arranged between the processing unit group 214 (the first heating / temperature adjustment processing unit group 214a and the second heating / temperature adjustment processing unit group 214b). Between the tower 215 and the second processing unit group 214, a passage 240 for circulating the gas exhausted from the lower part of the heat insulating wall 239 and the lower part of the first processing unit group 213 to the upper part thereof is arranged. In the present embodiment, as in the above-described fourth embodiment, a clean air supply unit that supplies clean air temperature-controlled from above to each first processing unit group is provided above the coating and developing system. Are located. The clean air supply unit includes an FFU (fan filter unit) and a temperature control device for adjusting temperature and humidity, and a passage for circulating gas exhausted from a lower part of the first processing unit group to an upper part thereof. Clean air from which particles and the like have been removed by adjusting the temperature and humidity from the gas flowing through 240 is supplied to the first processing unit group through the passage 243. Also in the present embodiment, similarly to the above-described fourth embodiment, a temperature control in which a passage 240 for circulating gas exhausted from the lower part of the heat insulating wall 239 and the first processing unit group 213 to the upper part thereof is arranged. By providing the mechanism, the temperature control in the processing liquid supply unit (BARC, CT, DEV) for performing processing on the wafer W at around normal temperature can be performed more precisely.

  As shown in FIG. 43, in the above-described anti-reflection film / resist film coating unit (CT) group 213e, the wafer W is placed on a spin chuck in a cup to apply an anti-reflection film, and the wafer W is reflected. An anti-reflection film coating unit (BARC) 216 for performing an anti-reflection film coating process is a two-stage process in which a wafer W is placed on a spin chuck in a cup, a resist solution is applied, and a resist coating process is performed on the wafer W. Units (CT) 217 are stacked in two stages. In the development processing unit group 213f, a development processing unit (DEV) 226 for supplying a developing solution by placing the wafer W on a spin chuck in a cup and performing development processing on the wafer W is stacked in 42 stages. .

  In the first and second heat / temperature control processing unit groups 214a and 214b, a heat processing unit (HP) 220 for performing heat processing on the wafer W and a temperature control processing unit (for performing temperature control on the wafer W), respectively. (CPL) 218 are arranged adjacent to each other and integrated to form a heating / temperature control processing unit 210 which is stacked in 12 stages. Further, shutter members 247a and 247b are provided on the side surfaces of the temperature control processing units of all the heating / temperature control processing units 210. Note that the structure of the heating / temperature control processing unit 210 in this embodiment is the same as that of the above-described fourth embodiment, and a description thereof will be omitted.

  The structure of the transfer device 219 described above is the same as the structure of the transfer devices 219a and 219b of the above-described fourth embodiment, and a description thereof will be omitted.

  Next, processing steps in the coating and developing processing system 1 configured as described above will be described. Note that the operation of the heating / temperature control unit is the same as that of the above-described fourth embodiment, and will not be described.

  In the coating and developing processing system 201, the unprocessed wafer W accommodated in the cassette C is taken out by the wafer carrier 211 of the cassette station 202, and then the first heating / temperature control heat treatment unit 210 a of the first processing station 203. Is transferred into a temperature control unit (CPL) 218a, and is placed on a temperature control plate 225 to perform a temperature control process.

  The wafer W that has been subjected to the temperature control processing in the temperature control processing unit (CPL) 218a is transferred into the antireflection film coating unit (BARC) 216 in the antireflection film / resist film coating unit (CT) group 213e by the transfer device 219. It is conveyed and a treatment liquid for an antireflection film is applied.

  The wafer W to which the processing liquid for the anti-reflection film is applied by the anti-reflection film coating unit (BARC) 216 is transferred by the transfer device 219 into the temperature control unit (CPL) 218a of the first heating / temperature control unit 210a. And placed on the temperature control plate 225. The wafer W placed on the temperature control plate 225 is transported into the heat processing unit (HP) 220a and subjected to heat processing.

  Thereafter, the wafer W is transferred into the temperature control processing unit (CPL) 218a, where the temperature control processing is performed.

  The wafer W that has been subjected to the temperature control processing by the temperature control processing unit (CPL) 218a is transferred by the transfer device 219 into the resist coating unit (CT) 217 in the antireflection film / resist coating unit group 213e, where the resist liquid is applied. Is done.

  The wafer W to which the resist solution has been applied by the resist coating unit (CT) 217 is transferred by the transfer device 219 into the temperature control unit (CPL) 218b of the second heating / temperature control unit 210b. Further, the wafer W is transferred into the heat processing unit (HP) 220b, where the heat processing is performed.

  After that, the wafer W is transferred into the temperature control processing unit (CPL) 218b, where the temperature control processing is performed. The wafer W that has been subjected to the temperature control processing by the temperature control processing unit (CPL) 218b is transferred into the peripheral exposure device 234 by the wafer transfer body 237 in the interface unit 205, and the peripheral exposure is performed.

  The wafer W subjected to the peripheral exposure by the peripheral exposure device 234 is transferred to the buffer cassette 233 by the wafer transfer body 237 and temporarily held therein, or the wafer transfer body 237, a pre-exposure temperature control unit (not shown), The wafer is transferred to an exposure apparatus (not shown) via a wafer transfer body.

  Next, the wafer W that has been subjected to the exposure processing by the exposure device is transferred from the interface unit 205 to the second heating / temperature control processing unit of the second processing station 246 via the wafer carrier, the buffer cassette 233, and the wafer carrier 237. The second heat / temperature control unit 210b in the group 214b is transported into the temperature control unit (CPL) 218b of the second heat / temperature control unit 210b, where the temperature control process is performed.

  The wafer W that has been subjected to the temperature control processing by the temperature control processing unit (CPL) 218b is transferred by the transfer device 219 to the development processing unit (DEV) 226 in the development processing unit group 213f, where the development processing is performed.

  The wafer W that has been subjected to the development processing by the development processing unit (DEV) 226 is transferred by the transfer device 219 to the temperature control processing unit (CPL) 218a of the heating / temperature control processing unit 210a in the first heating / temperature control processing unit group 214a. Through the heat treatment unit (CPL) 218a and the heat treatment unit (HP) 220a adjacent to the heat regulation unit (CPL) 218a, where the heat treatment is performed.

  The wafer W subjected to the heat treatment in the heat treatment unit (HP) 220a is transferred to the temperature control processing unit 218a, and is further accommodated in the cassette C by the wafer transfer body 211 of the cassette station 2.

  According to the coating and developing processing system according to the present embodiment configured as described above, the chemical tower as the processing liquid supply unit is disposed adjacent to the liquid processing unit (BARC, CT, DEV), and adjacent to the chemical tower. The heating and temperature control processing unit is disposed, and the temperature and temperature control processing unit (CPL) of the heating and temperature control processing unit is disposed on the chemical tower side. A temperature control unit and a chemical tower are interposed between the units. Thus, the thermal effect of the heat processing unit on the liquid processing unit side can be significantly suppressed. In the coating and developing system, the liquid processing units (BARC, CT, DEV) can be precisely controlled.

  Furthermore, according to the coating and developing processing system according to the present embodiment, the liquid processing unit group (the anti-reflection film / resist film coating unit (CT) group 213e and the developing unit group 213f) and the heating / temperature control processing unit group (the A passage 240 for circulating gas exhausted from the lower part of each of the heat insulating wall 239 and the liquid processing unit groups 213e and 213f to the upper part thereof between the first and second heating / temperature control processing unit groups 214a and 214b). Is arranged to prevent the thermal effect of the heat processing unit of the heating / temperature control processing unit on the liquid processing unit group, and to control the temperature in the liquid processing unit group that performs liquid processing on the wafer W at around normal temperature. It can be performed very precisely. Further, the passage 240 has a kind of heat insulating means, and the heat insulating wall 239 and the passage 240 are provided between the second processing unit group 214 and the chemical tower 215, so that the structure has double heat insulating means. Become. Therefore, the processing liquid stored in the chemical tower 215 is not easily affected by the heat of the heat processing unit 220, and the temperature can be easily adjusted.

  In the above embodiments, the wafer W is described as an example of the substrate, but the present invention can be applied to other substrates such as an LCD substrate.

  Note that the present invention is not limited to the embodiment described above.

  In the first embodiment, three heat treatment system units (G3 to G5), two main wafer transfer units (A1, A2), and two application system units (G1, G2) are provided. However, for example, four heat treatment system units, three main wafer transfer units, and three coating system units may be added in the left-right direction in FIG. 1 while maintaining the arrangement. Further, it is also possible to add more as needed.

  Further, in the heat treatment unit shown in FIGS. 11 and 12, a shielding plate 93 shown by a dashed line for suppressing thermal interference between the temperature control / transport device C and the heat treatment device H is provided. When the transfer is performed by the transfer device C, the shielding plate 93 may be slid and opened and closed.

  Further, the present invention can be applied not only to a semiconductor wafer but also to, for example, a glass substrate used for a liquid crystal display device.

  In addition, the present invention can be applied not only to a resist coating and developing system but also to other systems, for example, a SOD (Spin on Dielectric) processing system for forming an interlayer insulating film on a substrate. The SOD processing system has a coating unit for coating an interlayer insulating film material on a substrate, and a heating / temperature control unit for heating and controlling the temperature of the substrate on which the insulating film material is coated. This heating / temperature control unit has a heat processing unit and a temperature control unit provided adjacent thereto similarly to the heating / temperature control unit of the present embodiment. The processing unit has a hot plate whose set temperature can be set to 200 to 470 ° C. In a system having a unit for performing such high-temperature processing and a coating unit as a liquid processing unit, the coating unit and the heating / temperature control unit are arranged such that the temperature control processing unit is disposed on the coating unit side as in the present invention. Arranging the processing units is very effective. Alternatively, a processing liquid storage unit for storing a processing liquid to be supplied to the coating unit disposed adjacent to the liquid processing unit is disposed adjacent to the heating / temperature control processing unit, and the temperature control processing unit is further stored in the processing liquid storage unit. It is very effective to arrange it so that it is located on the side of the part. Thereby, the temperature control in the liquid processing unit group can be performed extremely accurately.

FIG. 1 is a plan view illustrating an overall configuration of a substrate processing apparatus according to a first embodiment of the present invention. It is a front view showing the whole composition of the substrate processing device. It is a rear view showing the whole composition of the substrate processing device. FIG. 2 is a sectional view of a main wafer transfer unit according to the first embodiment of the present invention. FIG. 3 is a perspective view illustrating a main part of the main wafer transfer unit. It is a side view of the same main wafer conveyance part. It is a side view which shows the drive mechanism of the main wafer conveyance body in the same main wafer conveyance part. It is a front view of the same main wafer carrier. It is sectional drawing of the same main wafer conveyance body. FIG. 10 is a sectional view taken along the line [10]-[10] in FIG. 9. FIG. 2 is a cross-sectional view of a pre-baking unit (PAB), a post-exposure baking unit (PEB), and a post-baking unit (POST) according to the first embodiment of the present invention. It is a longitudinal cross-sectional view of the same heat processing unit. It is a schematic diagram for showing the temperature control mechanism of the housing | casing in the same heat processing unit. 1 is a cross-sectional view of a high-precision temperature control unit (CPL) according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view of the high-temperature heat treatment unit (BAKE) according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view of the transition unit (TRS) according to the first embodiment of the present invention. FIG. 2 is a plan view showing a resist coating unit according to the first embodiment of the present invention. FIG. FIG. 2 is a plan view illustrating the developing unit according to the first embodiment of the present invention. FIG. FIG. 4 is a flowchart showing a series of operations of the substrate processing apparatus according to the first embodiment of the present invention. It is a figure for explaining an operation of substrate delivery in a heat treatment unit. It is a function diagram of the same heat processing unit. FIG. 2 is a schematic front view showing a flow of clean air in the substrate processing apparatus according to the first embodiment of the present invention. It is a schematic side view which shows the flow of the same clean air. It is a schematic side view which shows the flow of the same clean air. It is a figure for explaining opening and closing operation (the 1) of a shutter concerning the present invention. It is a figure for explaining opening and closing operation (the 1) of a shutter concerning the present invention. FIG. 4 is a cross-sectional view of a heat treatment unit according to a second embodiment of the present invention. FIG. 11 is a partial plan view of a substrate processing apparatus according to a third embodiment of the present invention. It is a top view showing the application processing system concerning a 4th embodiment of the present invention. FIG. 32 is a front view of the coating and developing system shown in FIG. 31. FIG. 32 is a cross-sectional view when a region having the temperature control / heating processing unit group in FIG. 31 is cut along the Y direction. FIG. 32 is a cross-sectional view when a region having the temperature control processing unit in FIG. 31 is cut along the X direction. FIG. 2 is a perspective view illustrating a configuration of a transport device. It is a top view showing the composition of a heating and temperature control processing unit. FIG. 37 is a cross-sectional view illustrating a configuration of the heating / temperature control processing unit illustrated in FIG. 36. It is sectional drawing which shows a temperature control mechanism structure. It is a top view showing the coating development processing system concerning a 5th embodiment of the present invention. FIG. 40 is a front view of the coating and developing system shown in FIG. 39. FIG. 40 is a sectional view taken along line AA ′ of FIG. 39. It is a top view showing the application processing system concerning a 6th embodiment of the present invention. FIG. 43 is a front view of the coating and developing system shown in FIG. 42. FIG. 43 is a cross-sectional view of FIG. 42 cut along the line BB ′.

Explanation of reference numerals

W: semiconductor wafers G1 to G5: first to fifth processing unit sections u: gap A1: first main wafer transport section A2: second main wafer transport section F: filter S: sensor
C… Temperature control / transport equipment
H… Heat treatment equipment
LH… Low temperature heat treatment equipment
HH high temperature heat treatment apparatus 1 substrate processing apparatus 7a upper arm 7b middle arm 7c lower arm 8 control unit 9 shielding plate 16 main wafer carrier 17 second main wafer carrier 36 fan 38 ... door 40 ... panel 41 ... housing 44 ... surrounding member 58 ... liquid supply device 75 ... housing 75b ... flow path 75c ... opening 75a ... opening 76 ... shutter 84 ... elevating pins 93 ... shielding plate 115 ... sub arm 150 ... substrate Processing apparatus 201: Coating and developing processing system 210: Heating / temperature control processing unit 213: First processing unit group 213a: Antireflection film coating unit (BARC) group 213b: Resist film coating unit (CT) group 213c: First development Processing unit group 213d: Second development processing unit group 213e: Antireflection film / resist film coating unit (CT) group 21 3f: development processing unit group 214: second processing unit group 214a: first heating / temperature adjustment processing unit group 214b: second heating / temperature adjustment processing unit group 214c: third heating / temperature adjustment processing unit group 214d: second 4 Heating / temperature control processing unit group 215 ... Chemical tower 216 ... Anti-reflective coating unit (BARC)
217: Resist film coating unit (CT)
218: Temperature control unit 219: Conveying device 220: Heating unit 226: Development unit

Claims (18)

A processing unit having openings on both sides for transferring the substrate,
A first and a second main transport unit that is arranged to face each opening of the processing unit and that carries in and out the substrate with the processing unit through the opening,
The processing unit comprises:
A processing unit for performing thermal processing on the substrate,
Temperature control / conveyance for adjusting the temperature of the substrate to a predetermined temperature, and for transporting the substrate between the first and second main transport units via the openings and further to the processing unit. A substrate processing apparatus, comprising: A processing unit having openings on both sides for transferring the substrate,
A first and a second main transport unit that is arranged to face each opening of the processing unit and that carries in and out the substrate with the processing unit through the opening,
The processing unit comprises:
A first processing unit for performing thermal processing on the substrate;
A second processing unit for performing thermal processing on the substrate;
The substrate is adjusted to a predetermined temperature, and the substrate is moved between the first and second main transfer units via the opening, and between the first processing unit and the second processing unit. And a temperature control / transportation unit for transporting,
The substrate processing apparatus, wherein the first processing unit, the second processing unit, and the temperature control / conveyance unit are linearly arranged. A processing unit having openings on both sides for transferring the substrate,
A first and a second main transport unit that is arranged to face each opening of the processing unit and that carries in and out the substrate with the processing unit through the opening,
The processing unit comprises:
A temperature controller for transferring the substrate to and from the first and second main transfer devices via the opening and adjusting the substrate to a predetermined temperature;
A processing unit for performing thermal processing on the substrate,
A substrate processing apparatus, comprising: a sub-transport section for transporting a substrate between the temperature control section and the processing section. A processing unit having openings on both sides for transferring the substrate,
A first and a second main transport unit that is arranged to face each opening of the processing unit and that carries in and out the substrate with the processing unit through the opening,
The processing unit comprises:
A temperature control unit that transfers the substrate between the first and second main transport units via the opening and adjusts the substrate to a predetermined temperature;
A first processing unit for performing thermal processing on the substrate;
A second processing unit for performing thermal processing on the substrate;
A sub-transport unit for transporting a substrate between the temperature control unit, the first processing unit, and the second processing unit;
The substrate processing apparatus, wherein the temperature control section, the first processing section, and the second processing section are linearly arranged. A processing unit having openings on both sides for transferring the substrate,
A first and a second main transport unit that is arranged to face each opening of the processing unit and that carries in and out the substrate with the processing unit through the opening,
The processing unit comprises:
A processing unit for performing thermal processing on the substrate,
A temperature control / transport unit for adjusting the substrate to a predetermined temperature, and transporting the substrate between the processing unit,
The substrate is transferable between the first and second main transfer units via the opening in a state where the substrate can be moved up and down, and the substrate is transferred between the temperature control and transfer unit when the substrate is lowered. A plurality of elevating pins for transferring the substrate. A processing unit having openings on both sides for transferring the substrate,
A first and a second main transport unit that is arranged to face each opening of the processing unit and that carries in and out the substrate with the processing unit through the opening,
The processing unit comprises:
A first processing unit for performing thermal processing on the substrate;
A second processing unit for performing thermal processing on the substrate;
A temperature control / transport unit for adjusting the substrate to a predetermined temperature, and transporting the substrate between the first processing unit and the second processing unit;
It can be moved up and down, transfers the substrate between the first and second main transfer sections through the opening in the raised state, and transfers the substrate between the temperature control and transfer section in the lowered state. And a plurality of elevating pins for transferring the
The substrate processing apparatus according to claim 1, wherein the first processing unit, the second processing unit, the temperature control / conveyance unit, and the elevating pins are linearly arranged. In the substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein the processing units are arranged in multiple stages in a vertical direction. The substrate processing apparatus according to any one of claims 1 to 7,
A substrate processing apparatus further comprising a liquid supply unit disposed at a position where a substrate can be transferred to and from the first or second transfer unit, and configured to supply a predetermined liquid to the substrate. The substrate processing apparatus according to claim 8,
The substrate processing apparatus, wherein the liquid supply units are arranged in multiple stages in a vertical direction. The substrate processing apparatus according to any one of claims 1 to 9,
A substrate processing apparatus, further comprising: an inspection unit disposed at a position where a substrate can be transferred to and from the first or second main transport unit, and inspecting the substrate. The substrate processing apparatus according to claim 10,
A substrate processing apparatus, wherein the inspection units are arranged in multiple stages in a vertical direction. In the substrate processing apparatus according to claim 10 or 11,
A substrate processing apparatus, wherein the inspection unit performs a microscopic inspection on a substrate. In the substrate processing apparatus according to any one of claims 1 to 12,
The substrate processing apparatus according to claim 1, wherein the processing unit is further disposed on a side of the first main transport unit opposite to a surface facing the processing unit. In the substrate processing apparatus according to any one of claims 1 to 13,
A substrate processing apparatus, further comprising a receiving unit for temporarily receiving and holding substrates before and after processing, on a side opposite to a surface of the processing unit facing the first or second main transport unit. The substrate processing apparatus according to claim 14,
The substrate processing apparatus further includes an inspection unit that is arranged in the receiving unit and performs an inspection on the substrate. The substrate processing apparatus according to claim 15,
A substrate processing apparatus, wherein the inspection unit performs a macro inspection on a substrate. A substrate transfer device for transferring the substrate,
Comprising a processing unit disposed on both sides and the front surface of the substrate transfer device,
At least one of the processing units is vertically arranged in multiple stages,
The substrate transfer device is a vertical transfer type capable of transferring a substrate to each unit, and a support member that supports the substrate transfer device in a vertical direction is provided on the front side of the processing unit. A substrate processing apparatus, being attached. A first processing unit group in which a first processing unit that supplies a predetermined liquid on the substrate and performs liquid processing is stacked in multiple stages;
A second processing unit in which a second processing unit in which a heating unit that performs a heating process on the substrate and a temperature control unit that performs a temperature control process on the substrate are integrated adjacent to each other and are stacked in multiple stages Groups and
An exposure unit that performs exposure processing on the substrate on which the liquid processing has been performed,
A substrate processing apparatus, wherein a substrate is waited in a temperature control section of the second processing unit before the substrate is carried into the exposure unit.

Images