JP2004289166A - Batch type remote plasma processing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a batch type remote plasma processing apparatus.
SOLUTION: A pair of electrodes 27, 27 connected to a high-frequency power supply 31 are disposed in close proximity to a processing chamber 12 into which a boat 2 holding a plurality of wafers 1 is loaded, and both electrodes are made of a dielectric material. A gas supply pipe 21 made of a dielectric material is disposed between the electrodes of the processing chamber 12 and covered with a protective tube 25, and a plurality of outlets 23 are opened in the gas supply pipe 21. The processing chamber 12 is heated by the heater 14, exhausted by the exhaust pipe 16, and the boat 2 is rotated by the rotating shaft 19. When high frequency power is applied between the two electrodes, a plasma 40 is formed in the gas supply pipe, the processing gas 41 in the gas supply pipe is activated, and the activated particles 42 are blown out from the outlet and come into contact with the wafer 1. Plasma treatment.
[Effect] Throughput can be improved by batch processing, plasma damage can be prevented by remote plasma, and temperature distribution of wafers can be made uniform by heating the entire processing chamber.
[Selection diagram] Fig. 1

Description

DETAILED DESCRIPTION OF THE INVENTION

Technical field to which the invention belongs

The present invention relates to a batch type remote plasma processing apparatus, for example, in a method of manufacturing a semiconductor device, depositing an insulating film or a metal film on a semiconductor wafer (hereinafter, referred to as a wafer) in which a semiconductor integrated circuit including a semiconductor element is formed. Position) that is effective to use.

Conventional technology

The use of tantalum pentoxide (Ta2 O5) has been studied to form a capacitance portion (insulating film) of a capacitor (Capacitor) of a DRAM (Dynamic Random Access Memory) which is an example of a semiconductor integrated circuit device. Since Ta2 O5 has a high dielectric constant, it is suitable for obtaining a large capacitance in a small area. From the viewpoints of productivity, film quality, and the like, in a DRAM manufacturing method, it is desired that Ta2 O5 be formed by a MOCVD apparatus.
On the other hand, when a Ta2 O5 film is formed by an MOCVD apparatus, it is known that carbon (C) causing leakage current adheres to the vicinity of the surface of the Ta2 O5 film. Therefore, after the Ta2 O5 film is formed on the wafer, it is necessary to remove carbon existing near the surface of the Ta2 O5 film. Since the single-wafer remote plasma CVD apparatus can reduce the heating temperature of the wafer to 300 to 400 ° C. while preventing plasma damage to the wafer, the single-wafer remote plasma CVD apparatus removes carbon from the Ta2 O5 film. It is considered to be.

However, in the single-wafer type remote plasma CVD apparatus, there is a problem that the throughput is reduced because the carbon of the Ta2 O5 film is removed one by one. For example, if the net processing time in a single-wafer remote plasma CVD apparatus is 10 minutes and the operation time of the transfer system is 2 minutes, the number of processed wafers per hour is only five.

Since a single-wafer remote plasma CVD apparatus is generally of a cold wall type in which only the susceptor is heated to a processing temperature, it is difficult to uniformly heat the wafer surface in the single-wafer remote plasma CVD apparatus. In addition, there is a problem that it is difficult to heat the wafer to 400 ° C. or more due to the selection of the material of the chamber. Further, when the heater is embedded in the susceptor to heat the wafer, heat transfer to the wafer becomes non-uniform due to the warpage or planar roughness of the wafer, so that, for example, uniform heating at 500 ° C. ± 1% is difficult. is there. For this reason, the use of a heater with an electrostatic chuck is conceivable, but the heater with an electrostatic chuck is extremely expensive, and there is a problem in terms of cost effectiveness regarding reliability.

An object of the present invention is to provide a batch type remote plasma processing apparatus which can obtain a large throughput and can improve the uniformity of the temperature of a substrate to be processed.

A first means for solving the problem is that a process tube having a processing chamber into which a plurality of substrates to be processed is loaded is located at a position away from a loading area of the plurality of substrates to be processed in the processing chamber. A pair of electrodes adjacent to each other are arranged, and a power supply for applying high-frequency power is connected between the pair of electrodes so that a processing gas is supplied to a space between the pair of electrodes. It is characterized by comprising.
A second means for solving the problem is that a pair of electrodes are arranged facing each other inside and outside of the processing chamber in a process tube having a processing chamber into which a plurality of substrates to be processed are loaded. A power supply for applying high-frequency power is connected between the pair of electrodes, and a processing gas is supplied to a space between the two electrodes in the processing chamber.
A third means for solving the problem is that a pair of electrodes adjacent to each other are arranged in the processing chamber of a process tube having a processing chamber into which a plurality of substrates to be processed are loaded, A power supply for applying a high-frequency power is connected between the electrodes, and a discharge chamber is formed in the processing chamber, including between the two electrodes, and independent of the processing chamber. A gas outlet for supplying to the chamber is provided.

In each of the above means, when high-frequency power is applied between both electrodes, plasma is generated between both electrodes. When a processing gas is supplied in the plasma atmosphere, neutral active particles are formed, and the active particles are supplied to a plurality of substrates to be processed carried into the process tube, thereby forming a plurality of substrates. The substrate to be processed is collectively subjected to plasma processing. According to each of the above-described means, a plurality of substrates to be processed are batch-processed collectively, so that the throughput is greatly improved as compared with a case where the substrates to be processed are processed one by one (single-wafer processing). Can be done. Further, by heating a plurality of substrates to be processed accommodated in the process tube by a hot wall type heater, the surface of each of the substrates to be processed can be uniformly heated. Processing can be made uniform.
(Embodiment of the invention)

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In this embodiment, as shown in FIGS. 1 to 3, the batch type remote plasma processing apparatus according to the present invention is a batch type vertical hot wall type remote plasma CVD apparatus (hereinafter, referred to as a CVD apparatus). It is configured. That is, the CVD apparatus 10 includes a process tube 11 formed of a highly heat-resistant material such as quartz glass and formed in a cylindrical shape with one end opened and the other end closed, and the center line of the process tube 11 is vertical. So that it is arranged vertically and fixedly supported. A hollow portion of the process tube 11 forms a processing chamber 12 for accommodating a plurality of wafers 1, and a lower end opening of the process tube 11 forms a furnace port 13 for taking in and out the wafer 1 as a processing object. are doing. The inner diameter of the process tube 11 is set to be larger than the maximum outer diameter of the wafer 1 to be handled.

Outside the process tube 11, a heater 14 for uniformly heating the entire processing chamber 12 is provided concentrically so as to surround the periphery of the process tube 11. (Not shown), so that it is installed vertically.

A manifold 15 is in contact with the lower end surface of the process tube 11. The manifold 15 is formed of metal and has a cylindrical shape having flanges projecting radially outward at both upper and lower ends. The manifold 15 is detachably attached to the process tube 11 for maintenance and inspection work and cleaning work on the process tube 11. The process tube 11 is vertically installed by supporting the manifold 15 on a machine frame (not shown) of the CVD apparatus 10.

One end of an exhaust pipe 16 is connected to a part of the side wall of the manifold 15, and the other end of the exhaust pipe 16 is connected to an exhaust device (not shown) so that the processing chamber 12 can be exhausted. I have. A seal cap 17 for closing the lower end opening is brought into contact with the lower end surface of the manifold 15 from below in the vertical direction with a seal ring 18 interposed therebetween. The seal cap 17 is formed in a disk shape substantially equal to the outer diameter of the manifold 15, and is configured to be vertically moved up and down by an elevator (not shown) installed vertically outside the process tube 11. . A rotation shaft 19 is inserted through the center line of the seal cap 17, and the rotation shaft 19 moves up and down together with the seal cap 17, and is rotated by a rotation driving device (not shown). At the upper end of the rotating shaft 19, a boat 2 for holding the wafer 1 as an object to be processed is vertically supported and supported.

The boat 2 includes a pair of upper and lower end plates 3 and 4, and a plurality of (three in the present embodiment) holding members 5 which are provided between the end plates 3 and 4 and vertically arranged. A plurality of holding grooves 6 are arranged in each holding member 5 at equal intervals in the longitudinal direction, and are submerged so as to face each other and open. Then, the outer peripheral edge of the wafer 1 is inserted between the plurality of holding grooves 6 of each holding member 5 so that the plurality of wafers 1 are held in the boat 2 horizontally and centered and aligned. It is supposed to be. A heat insulating cap portion 7 is formed on the lower surface of the lower end plate 4 of the boat 2, and the lower end surface of the heat insulating cap portion 7 is supported by a rotating shaft 19.

At a position different from the exhaust pipe 16 near the inner peripheral surface of the process tube 11 (a position opposite by 180 degrees in the illustrated example), a gas supply pipe 21 for supplying a processing gas is vertically erected. The tube 21 is formed in an elongated circular pipe shape using a dielectric material. The gas inlet 22 at the lower end of the gas supply pipe 21 is bent at right angles to an elbow shape, and penetrates the side wall of the manifold 15 radially outward and protrudes to the outside. A plurality of outlets 23 are opened in the gas supply pipe 21 in a vertical direction, and the number of the outlets 23 corresponds to the number of wafers 1 to be processed. In the present embodiment, the number of the outlets 23 is equal to the number of wafers 1 to be processed, and the height position of each outlet 23 is between the upper and lower adjacent wafers 1 held by the boat. Each is set so as to face the space between them.

A pair of support cylinders 24, 24 are provided on both sides of the gas supply port 21 of the gas supply pipe 21 in the circumferential direction of the manifold 15 in a radially outward direction. The holder portions 26, 26 of the pair of protection tubes 25, 25 are inserted in the radial direction and supported respectively. Each protective tube 25 is formed of an elongated circular pipe having a closed upper end made of a dielectric material. The upper and lower ends of each protective tube 25 are vertically aligned with the gas supply tube 21. The holder portion 26 at the lower end of each protection tube 25 is bent at right angles to an elbow shape, penetrates the support tube portion 24 of the manifold 15 radially outward, and protrudes to the outside. The inside is communicated with the outside (atmospheric pressure) of the processing chamber 12.

A pair of electrodes 27, 27 formed of an elongated rod using a conductive material are concentrically laid in the hollow portions of the protection tubes 25, 25. Reference numeral 28 is held by a holder 26 via an insulating tube 29 and a shield tube 30 for preventing discharge. A high frequency power supply 31 for applying high frequency power is electrically connected between the two electrodes 27 via a matching unit 32.

Next, a method for removing carbon existing near the surface of the Ta2 O5 film for the capacitance portion of the DRAM capacitor by using the CVD apparatus 10 having the above-described configuration will be described. That is, in this embodiment, a Ta2 O5 film (not shown) for forming a capacitance portion of a capacitor is deposited on the wafer 1 supplied to the CVD apparatus 10 in the previous MOCVD process. It is assumed that carbon (not shown) exists in the vicinity of the surface of the Ta2 O5 film, and the carbon is removed by the CVD apparatus 10.

A plurality of wafers 1 as substrates to be processed in the CVD apparatus 10 are loaded (charged) on the boat 2 by a wafer transfer device (not shown). As shown in FIGS. 2 and 3, the boat 2 loaded with a plurality of wafers 1 is lifted by an elevator together with the seal cap 17 and the rotating shaft 19 and is loaded into the processing chamber 12 of the process tube 11 (boat). Loading).

When the boat 2 holding the group of wafers 1 is carried into the processing chamber 12, the processing chamber 12 is evacuated to a predetermined pressure or lower by an exhaust device connected to the exhaust pipe 16, and the power supplied to the heater 14 is increased. Thereby, the temperature of the processing chamber 12 is raised to a predetermined temperature. Since the heater 14 has a hot wall type structure, the temperature of the processing chamber 12 is maintained uniformly over the entire area. As a result, the temperature distribution of the group of wafers 1 held on the boat 2 becomes uniform over the entire length. At the same time, the temperature distribution in the plane of each wafer 1 becomes uniform and the same.

After the temperature of the processing chamber 12 reaches a preset value and stabilizes, oxygen (O2) gas is introduced as the processing gas 41, and when the pressure reaches the preset value, the boat 2 is rotated by the rotating shaft 19. The high-frequency power is applied between the pair of electrodes 27 by the high-frequency power supply 31 and the matching unit 32. When the oxygen gas as the processing gas 41 is supplied to the gas supply pipe 21 and high-frequency power is applied between the electrodes 27, 27, the plasma 40 is introduced into the gas supply pipe 21 as shown in FIG. Is formed, and the processing gas 41 is brought into an active state.

As shown by broken arrows in FIGS. 1 and 2, activated particles (oxygen radicals) 42 of the processing gas 41 are blown out from the respective outlets 23 of the gas supply pipe 21 into the processing chamber 12.

The activated particles (hereinafter, referred to as active particles) 42 are blown out from the respective outlets 23, so that they flow between the opposed wafers 1, 1 and come into contact with the respective wafers 1. The contact distribution with respect to the entire group becomes uniform over the entire length of the boat 2, and the radial contact distribution in the wafer plane of each wafer 1 corresponding to the flow direction of the active particles also becomes uniform. At this time, since the wafer 1 is rotated by the rotation of the boat 2, the contact distribution in the wafer surface of the active particles 42 flowing between the wafers 1 and 1 becomes uniform in the circumferential direction.

The active particles (oxygen radicals) 42 in contact with the wafer 1 are thermally reacted with carbon existing near the surface of the Ta2 O5 film of the wafer 1 to generate CO (carbon monoxide), thereby removing carbon from the Ta2 O5 film. I do. At this time, as described above, the temperature distribution of the wafer 1 is maintained uniformly over the entire length of the boat 2 and within the wafer surface, and the contact distribution of the active particles 42 with the wafer 1 is maintained at all positions of the boat 2 and within the wafer surface. Therefore, the action of removing carbon from the wafer 1 by the thermal reaction of the active particles 42 becomes uniform at all positions of the boat 2 and within the wafer surface.

Incidentally, the processing conditions for removing the carbon of the Ta2 O5 film for forming the capacitance portion of the capacitor of the DRAM are as follows. The supply flow rate of the oxygen gas used as the processing gas is 8.45 × 10 -1 to 3.38 Pa · m 3 / s, the pressure of the processing chamber is 10 to 100 Pa, and the temperature is 500 to 700 ° C.

When a preset processing time has elapsed, the supply of the processing gas 41, the rotation of the rotating shaft 19, the application of high frequency power, the heating of the heater 14, the exhaust of the exhaust pipe 16, and the like are stopped, and then the seal cap 17 is lowered. As a result, the furnace port 13 is opened, and the wafers 1 are unloaded from the furnace port 13 to the outside of the processing chamber 12 (boat unloading) while being held by the boat 2.

The group of wafers 1 carried out of the processing chamber 12 is discharged (unloaded) from the boat 2 by the wafer transfer device. Thereafter, by repeating the above-described operation, a plurality of wafers 1 are batch-processed collectively.

According to the embodiment, the following effects can be obtained.

1) By batch processing a plurality of wafers at once, the throughput can be greatly improved as compared with a case where single wafers are processed one by one. For example, the number of processed sheets per hour in the case of single-wafer processing is five, assuming that the processing time is 10 minutes and the operation time of the transport system is 2 minutes. On the other hand, when batch processing is performed on 100 wafers, the number of processed wafers per hour is 66.7, assuming that the processing time is 30 minutes and the operation time of the transfer system is 60 minutes.

2) By heating a plurality of wafers held in the boat and carried into the processing chamber by a hot wall type heater, the entire length of the boat and the temperature within each wafer surface can be evenly distributed. The processing state of the wafer by the active particles obtained by activating the processing gas by plasma, that is, the removal distribution of carbon of the Ta2 O5 film can be made uniform.

3) By laying a pair of elongated electrodes in the processing chamber so as to face each other, plasma can be formed over the entire length of both electrodes, so that active particles formed by the processing gas being activated by the plasma are held in the boat. The wafers can be supplied more uniformly over the entire length of the wafer group.

4) By laying the gas supply pipe through which the processing gas is supplied in the space between the pair of elongated electrodes, the processing gas can be activated by the plasma inside the gas supply pipe, so that the plasma damage reaches the wafer. , And a decrease in the yield of the wafer due to plasma damage can be prevented.

5) Opening the gas supply pipe with the outlet facing the space between the upper and lower wafers held by the boat allows the active particles to flow between the respective wafers. Can be made uniform over the entire length of the boat, and as a result, the state of treatment by the active particles can be made more uniform.

6) By rotating the boat holding a plurality of wafers, the contact distribution of the active particles flowing between the wafers within the wafer surface can be made uniform in the circumferential direction, thereby further improving the processing state by the active particles. It can be made uniform.

7) The leakage current between the capacitor electrodes can be reduced by removing the carbon of the Ta2 O5 film used for the capacitance portion of the DRAM capacitor, so that the performance of the DRAM can be improved.

FIGS. 4 and 5 show a CVD apparatus according to a second embodiment of the present invention.

This embodiment is different from the above-described embodiment in that a pair of electrodes 27A and 27B are laid inside and outside the process tube 11, respectively, and the gas supply pipe 21A is located at a position other than the space facing the electrodes 27A and 27B. It is a point that is arranged in.

In the present embodiment, high-frequency power is applied between the inner electrode 27A and the outer electrode 27B by the high-frequency power supply 31 and the matching device 32, and the processing gas 41 is supplied to the processing chamber 12 by the gas supply pipe 21A. Then, a plasma 40 is formed between the side wall of the process tube 11 and the inner electrode 27A, and the processing gas 41 is activated. The activated particles 42 diffuse into the entire processing chamber 12 and come into contact with each wafer 1 held on the boat 2. The active particles 42 in contact with the wafer 1 remove the carbon interposed in the Ta2 O5 film of the wafer 1 by a thermal reaction.

6 to 8 show a CVD apparatus according to a third embodiment of the present invention.

In the present embodiment, a pair of protective tubes 25, 25 provided vertically along the inner wall surface of the process tube 11 is bent downward and penetrates the side surface of the process tube 11, and the two protective tubes 25, 25 has a pair of electrodes 27, 27 inserted from below the side surface of the process tube 11. Further, a gutter-shaped partition wall 34 forming a plasma chamber 33 is installed on the inner periphery of the process tube 11 so as to hermetically surround the protection tubes 25, 25, and the partition wall 34 has a plurality of outlets 35. It is arranged and opened so as to face between the upper and lower wafers 1 and 1. Further, a gas supply pipe 21 is provided at a position where gas can be supplied to the plasma chamber 33 at the lower side of the process tube 11.

After the processing gas 41 is supplied to the plasma chamber 33 and maintained at a predetermined pressure, a high-frequency power is applied between the two electrodes 27 by the high-frequency power supply 31 and the matching unit 32, and the plasma 40 is formed in the plasma chamber 33. Then, the processing gas 41 is activated. Then, the activated electrically neutral particles 42 are blown out from a blowout port 35 formed in the partition wall 34 and supplied to the processing chamber 12, so as to come into contact with each wafer 1 held in the boat 2. The active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

FIGS. 9 to 11 show a CVD apparatus according to a fourth embodiment of the present invention.

The CVD apparatus according to the present embodiment includes a pair of electrodes 27C, 27C formed in an elongated plate shape having a shorter length than the process tube 11, and both electrodes 27C, 27C are connected to one side of the process tube 11. The pair of electrode insertion ports 36, 36, which are opened parallel to each other and vertically aligned with their upper and lower ends aligned, are respectively inserted from outside the process tube 11. A pair of protective tubes 25C, 25C are provided on the inner peripheral surface of the process tube 11 so as to face the pair of electrode insertion ports 36, 36, respectively. Tubes 25C, 25C are inserted and surrounded respectively. The opening width of both electrode insertion holes 36, 36 and both protection tubes 25C, 25C is set slightly larger than the plate thickness of both electrodes 27C, 27C, and both electrodes 27C, 27C are exposed to the atmospheric pressure. ing. Connecting portions 28C, 28C are provided at lower ends of the two electrodes 27C, 27C so as to protrude outward, respectively. A high-frequency power source 31 for applying high-frequency power is connected to the connecting portions 28C, 28C via a matching unit 32. Connected. Between the two protection tubes 25C, 25C, a plate-shaped partition wall 34C that forms a plasma chamber 33C in cooperation with the both protection tubes 25C, 25C is provided, and a plurality of outlets 35C are vertically provided in the partition wall 34C. The wafers 1 and 1 are arranged and opened so as to face each other. The processing gas 41 is supplied from the gas supply pipe 21 to the plasma chamber 33C.

After the processing gas 41 is supplied to the plasma chamber 33C by the gas supply pipe 21 and maintained at a predetermined pressure, when the high frequency power is applied between the electrodes 27C and 27C by the high frequency power supply 31 and the matching unit 32, the plasma 40 Is formed in the plasma chamber 33C, and the processing gas 41 is activated. Then, the activated particles 42 are blown out from an air outlet 35C opened in the partition wall 34C and supplied to the processing chamber 12, so that the activated particles 42 come into contact with each wafer 1 held by the boat 2. The active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

12 to 14 show a CVD apparatus according to a fifth embodiment of the present invention.

The CVD apparatus according to the present embodiment includes a discharge tube 38 that forms a plasma chamber 37. The discharge tube 38 is made of a dielectric material and has a substantially square prism shape shorter than the process tube 11. It is formed and laid on a part of the outer periphery of the side wall of the process tube 11 so as to extend in the vertical direction. On the side wall of the process tube 11 surrounded by the discharge tube 38, a plurality of outlets 39 are opened and arranged so as to face between the upper and lower wafers 1, 1. The gas 41 is supplied from the gas supply pipe 21. On both sides of the discharge tube 38 in the circumferential direction, a pair of electrodes 27D, 27D formed in an elongated flat plate shape having a shorter length than the discharge tube 38 are laid in a state exposed to the atmospheric pressure. A high-frequency power supply 31 for applying high-frequency power is electrically connected via a matching unit 32 to each of the connection portions 28D and 28D formed on the 27D.

After the processing gas 41 is supplied to the plasma chamber 37 by the gas supply pipe 21 and maintained at a predetermined pressure, when the high-frequency power is applied between the two electrodes 27D and 27D by the high-frequency power supply 31 and the matching device 32, the plasma 40 is generated. The processing gas 41 is formed in the plasma chamber 37 and becomes active. Then, the activated particles 42 are blown out from an air outlet 39 communicating with the discharge tube 38 and supplied to the processing chamber 12, so that the activated particles 42 come into contact with each wafer 1 held by the boat 2. The active particles 42 in contact with the wafer 1 treat the surface of the wafer 1.

Note that the present invention is not limited to the above-described embodiment, and it goes without saying that various changes can be made without departing from the gist of the present invention.

For example, the number of outlets of the gas supply pipe is not limited to be equal to the number of wafers to be processed, but can be increased or decreased according to the number of wafers to be processed. For example, the outlets are not limited to being arranged between the vertically adjacent wafers, but may be arranged every two or three wafers.

In the above-described embodiment, the case where the carbon intervening in the Ta2 O5 film of the capacitance portion of the capacitor has been described. However, the batch type remote plasma processing apparatus according to the present invention is capable of removing the foreign matter intervening in other film types. The present invention can be applied to the case of removing molecules and atoms other than the film type, the case of forming a CVD film on a wafer, the case of diffusion, the case of heat treatment, and the like.

For example, in a process of nitriding an oxide film for a gate electrode of a DRAM, nitrogen (N2) gas or ammonia (NH3) or nitrogen monoxide (N2 O) is supplied to a gas supply pipe, and the processing chamber is heated to a temperature from room temperature to 750 ° C. By heating, the surface of the oxide film could be nitrided. In addition, when the surface of the silicon wafer before the silicon germanium (SiGe) film is formed is plasma-treated with active particles of hydrogen (H2) gas, the natural oxide film can be removed and a desired SiGe film can be formed. I was able to. In the formation of a nitrogen film at a low temperature, DCS (dichlorosilane) and NH3 (ammonia) are alternately supplied to form Si (silicon) and N (nitrogen) one layer at a time. When performing film formation, NH3 was activated by plasma during the supply of NH3, and a high-quality nitride film was obtained.

In the above embodiment, the case where the processing is performed on the wafer has been described, but the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

As described above, according to the present invention, it is possible to provide a batch type remote plasma processing apparatus capable of obtaining a large throughput and improving the uniformity of the temperature of a substrate to be processed.

FIG. 1 is a plan sectional view showing a CVD apparatus according to a first embodiment of the present invention. FIG. 2 is a longitudinal sectional view taken along the line II-II in FIG. 1. FIG. 3 is a vertical sectional view taken along the line III-III of FIG. 1. FIG. 4 is a plan sectional view showing a CVD apparatus according to a second embodiment of the present invention. FIG. 5 is a vertical sectional view taken along line VV in FIG. 4. It is a top sectional view showing the CVD device which is a 3rd embodiment of the present invention. FIG. 7 is a longitudinal sectional view taken along line VII-VII in FIG. 6. FIG. 7 is a vertical sectional view taken along line VIII-VIII in FIG. 6. FIG. 11 is a plan sectional view showing a CVD apparatus according to a fourth embodiment of the present invention. FIG. 10 is a vertical sectional view taken along line XX of FIG. 9. FIG. 10 is a longitudinal sectional view taken along line XI-XI in FIG. 9. FIG. 14 is a plan sectional view showing a CVD apparatus according to a fifth embodiment of the present invention. FIG. 13 is a longitudinal sectional view taken along line XIII-XIII in FIG. 12. FIG. 14 is a longitudinal sectional view taken along line XIV-XIV in FIG. 12.

Explanation of reference numerals

DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate to be processed), 2 ... Boat, 3, 4 ... End plate, 5 ... Holding member, 6 ... Holding groove, 7 ... Heat insulation cap part, 10 ... CVD apparatus (batch type remote plasma processing apparatus), 11 ... process tube, 12 ... processing chamber, 13 ... furnace port, 14 ... heater,
15: Manifold, 16: Exhaust pipe, 17: Seal cap, 18: Seal ring, 19: Rotating shaft, 21: Gas supply pipe, 22: Gas inlet port, 23: Blow outlet, 2
4 ... supporting cylinder part, 25 ... protection tube, 26 ... holder part, 27 ... electrode, 28 ... holding part,
29: insulating cylinder, 30: shield cylinder, 31: high-frequency power source, 32: matching device, 40: plasma, 41: processing gas, 42: active particles, 21A: gas supply pipe, 27A: inner electrode, 27B: outer Electrode, 33: plasma chamber, 34: partition, 35: outlet,
25C: Protection tube, 27C: Electrode, 28C: Connection, 33C: Plasma chamber, 34C
... partition wall, 35C ... outlet, 36 ... electrode insertion port, 27D ... electrode, 28D ... connection part,
37: plasma chamber, 38: discharge tube, 39: outlet.

Claims (1)

  A pair of electrodes that are close to each other are arranged at a position in the process chamber of the process tube that includes the processing chamber into which the plurality of substrates to be loaded are separated from the loading area of the plurality of substrates to be loaded in the processing chamber. A power source for applying high-frequency power is connected between the pair of electrodes, and a processing gas is supplied to a space between the pair of electrodes. Plasma processing equipment.

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