JP2004289085A - Thin film laminated electronic component and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film laminated electronic component which can efficiently and economically manufacture a small-sized and high-performance thin film laminated electronic component, and to provide the thin film laminated electronic component. <P>SOLUTION: The method of manufacturing the thin film laminated electronic component comprises the steps of forming a protection layer 6 on an upper surface of a laminate 4 which is formed on a film-formed substrate 1, forming half-cut grooves 11 which cut the whole laminate 4 in the thickness direction and also cut the film-formed substrate 1 partway in the thickness direction by cutting the portion where thin film internal electrodes 3 shift in position, from the side of the protection layer 6 in the direction nearly at right angles to the shift direction, forming an external electrode 7 on an upper surface of the protection layer 6 and a half-cut end surface 5a of a laminated structure 5, dividing the external electrode 7 into two by removing a part of the external electrode 7 which is formed on the upper surface of the protection layer 6, and making the half-cut grooves 11 pass through by polishing the film-formed substrate 1 from the side opposite to the protection layer 6 until the half-cut grooves are reached. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【００６５】
（３）次に上記方法で成膜基板１上に積層体４及び保護層６を形成してなる積層構造体５の、保護層６側とは反対側の面が接着面となるように、支持冶具（図示せず）にワックスを用いて貼り付け、＃８００の耐水ペーパーを用いて保護層６の厚みが３０μｍになるまで研磨した。
【００６６】
（４）その後、支持冶具から積層構造体５を剥がし、アセトンによる超音波洗浄を行った後、ダイシングテープに保護層６側と反対側の面が接着面となるように貼り付け、図３，図４に示すように、薄膜内部電極３を位置ずれさせた部分を、ダイシングソーを用いて０．１１ｍｍの深さまでハーフカットすることによりハーフカット溝１１を形成した。
【００６７】
（５）ハーフカットした積層構造体５をアセトン中で超音波洗浄し、乾燥させた後、スパッタ法により、ハーフカット溝１１の側面及び底面を含む積層構造体５の全面に、Ｐｔ膜，Ｎｉ−Ｃｒ膜，Ｎｉ膜の順に成膜を行うことにより外部電極７を形成した（図５）。
【００６８】
（６）その後、図６に示すように、積層構造体５の中央部分を、ダイシングソーを用いて５μｍの深さまでハーフカットしてハーフカット溝１２を形成することにより、外部電極７を２つに分割した。
【００６９】
（７）次いで、ダイシングソーを用いて、ハーフカット溝１１，１２と直交する方向に、深さ０．１２ｍｍのハーフカット溝１３を形成した（図７）。
【００７０】
（８）そして、ハーフカット溝１２，１３が形成された積層構造体５を、アセトン中で超音波洗浄し、乾燥させた後、ハーフカットした面を、ワックスを用いて支持冶具（図示せず）に貼り付け、図８に示すように、成膜基板１の底面をユニット厚みが０．１ｍｍになるまで研磨して、ハーフカット溝１１及び１３を貫通させた。研磨終了後、支持冶具ごとアセトン中に浸漬して、ワックスを溶融除去することにより、不要部分がカットされた、寸法が０．４ｍｍ×０．２ｍｍ×０．１ｍｍのチップを得た。
【００７１】
（９）それから、このチップをアセトン中で超音波洗浄し、乾燥させることにより、寸法が０．４ｍｍ×０．２ｍｍ×０．１ｍｍの薄膜積層チップコンデンサを得た。図９は、得られた薄膜積層チップコンデンサ１０を示す図である。図９に示すようにこの薄膜積層チップコンデンサ１０は、成膜基板１と、成膜基板１上に薄膜誘電体２，２ａ，２ｂと、薄膜内部電極３を交互に積層することにより形成された積層体４と、積層体４の上面側に配設されたガラス層（保護層）６と、積層構造体５のカット端面５ａから、ガラス層（保護層）６の上面側に回り込むような態様で配設された外部電極７とを備えている。
【００７２】
このようにして得た薄膜積層チップコンデンサ１０を、図１０に示すように配線基板２１上にはんだ付けし、外部電極７をはんだ２０により配線基板２１上の端子２２に接続し、得られる静電容量の値を測定した。１ｋＨｚ，１００ｍＶで２０個測定を行った結果、平均値で静電容量１０．８ｎＦ、誘電正接１．０％の良好な特性が得られることが確認された。
【００７３】
なお、上記実施形態１では、保護層としてガラス層を形成した場合を例にとって説明したが、好ましい保護層の構成材料として、ポリイミドを用いることも可能である。また、本願発明においては、さらにその他の材料からなる保護層を用いることも可能である。
【００７４】
［実施形態２］
この実施形態２でも、薄膜積層電子部品として、薄膜積層コンデンサを製造する場合を例にとって説明する。
【００７５】
（１）まず、図１１に示すように、０．５ｍｍ厚、２０ｍｍ角の成膜基板（結晶化ガラス基板）１上に薄膜誘電体２及び薄膜電極（薄膜内部電極）３を交互に形成して積層することにより、薄膜誘電体２を介して互いに対向する各薄膜内部電極３が所定の一方向（図１１では矢印Ｘの方向）に交互に位置ずれして配設された積層体４を形成した（図１２参照）。
なお、具体的には、薄膜誘電体２（２ａ）として、１５０ｎｍ厚の（Ｂａ，Ｓｒ）ＴｉＯ_３を、成膜基板１の全面に成膜基板温度６００℃の条件で成膜した後、所定の平面形状を有する１３０ｎｍ厚のＰｔ層（薄膜内部電極）３と、１２０ｎｍ厚の（Ｂａ，Ｓｒ）ＴｉＯ_３層（薄膜誘電体）２を成膜し、この成膜工程を繰り返して、薄膜誘電体２と薄膜内部電極３（３ａ，３ｂ）を交互に成膜した。そして、最後に（Ｂａ，Ｓｒ）ＴｉＯ_３層（薄膜誘電体）２（２ｂ）を１５０ｎｍの膜厚で成膜した。
なお、薄膜誘電体２，２ａ，２ｂは、ＭＯＣＶＤ法を用いて成膜基板１の全面に形成した。
また、薄膜内部電極３は、Ｓｉシャドウマスクを用いてスパッタ法により成膜した。Ｓｉシャドウマスクとしては、異方性エッチングにより作製した、所定のパターンを有するシャドウマスクを用いた。
【００７６】
また、薄膜内部電極３としては、幅（Ｗ_１）が０．１ｍｍのＰｔ層３（３ａ）と、幅（Ｗ_２）が０．１２ｍｍのＰｔ層３（３ｂ）を、重なり部分の長さ（Ｌ_０）が２６０μｍになるように交互に成膜した。
【００７７】
また、この実施形態２では、結晶化ガラス基板として、熱膨張係数が薄膜誘電体２の熱膨張係数よりも大きいガラス基板（熱膨張係数：約１１ｐｐｍ／℃）を用いた。なお、薄膜誘電体として用いられている（Ｂａ，Ｓｒ）ＴｉＯ_３の熱膨張係数は、Ｂａ：Ｓｒ比によって変わるが、通常は約６〜１０ｐｐｍ／℃の範囲である。
【００７８】
（２）また、上記（１）で用いた結晶化ガラス基板と同じ材質の、０．０５ｍｍ厚、１９．５ｍｍ角の基板（熱膨張係数は約１１ｐｐｍ／℃）を保護基板として用い、その上にスピンコート法により、ガラスペーストを塗布した。このガラスペーストは、Ｂｉ−Ｂ−Ｓｉ−Ａｌ系ガラスに、バインダー及び有機ビヒクルを配合してペースト化することにより作製したものである。なお、このＢｉ−Ｂ−Ｓｉ−Ａｌ系ガラスとしては、ガラス転移点が４５０℃、ガラス軟化点が４８０℃のものを用いた。
そして、ガラスペーストを塗布、乾燥後、表２に示す条件で焼き付けを行い、保護基板の一方の面にガラス層を形成した。
【００７９】
【表２】

【００８０】
なお、表２に示した条件のうち、４４０℃で保持するようにしているのは、バインダーを燃焼除去するためである。
また、表２の条件での熱処理後に、ガラスが完全に溶融し、ガラス中に気泡が残留していないことを確認した。
【００８１】
（３）次に、図１２に示すように、積層体４の上面、すなわち、最上層の誘電体２（２ｂ）の上面と、保護基板３１の一方の面（下面）に配設されたガラス層３２が接するように、保護基板３１のガラス層３２が配設された面を下向きにして重ね、その上に１９．５ｍｍ×１９．５ｍｍ×１ｍｍのアルミナ基板（図示せず）を重ねて、さらに３．８ｋｇのステンレス製の錘をセットして、表３に示す条件で圧着を行った。これにより、図１３に示すように、成膜基板１、積層体４、ガラス層３２、保護基板３１を備えた積層構造体５を得た。
【００８２】
【表３】

【００８３】
（４）次に、図１４、図１５に示すように、薄膜内部電極３を位置ずれさせた部分を、ダイシングソーを用いて０．２１ｍｍの深さまでハーフカットすることによりハーフカット溝１１を形成した。
【００８４】
（５）それから、ハーフカットした積層構造体５をアセトン中で超音波洗浄し、乾燥させた後、スパッタ法により、ハーフカット溝１１の側面及び底面を含む積層構造体５の全面に、Ｐｔ膜，Ｎｉ−Ｃｒ膜，Ｎｉ膜の順に成膜を行うことにより、図１６に示すように、外部電極７を形成した。
【００８５】
（６）その後、図１６、図１７に示すように、積層構造体５の中央部分を、ダイシングソーを用いて５μｍの深さまでハーフカットしてハーフカット溝１２を形成することにより、外部電極７を２つに分割した。
【００８６】
（７）そして、図１８に示すように、ダイシングソーを用いて、ハーフカット溝１１と直交する方向に、深さ０．２２ｍｍのハーフカット溝１３を形成した。
【００８７】
（８）それから、再び、ハーフカットした積層構造体５をアセトン中で超音波洗浄し、乾燥させた後、ハーフカットした面を、ワックスを用いて支持冶具（図示せず）に貼り付け、図１９に示すように、成膜基板１の底面をユニット厚みが０．２ｍｍになるまで研磨して、ハーフカット溝１１及び１３を貫通させた。研磨終了後、支持冶具ごとアセトン中に浸漬して、ワックスを溶融除去することにより、不要部分がカットされた、寸法が０．４ｍｍ×０．２ｍｍ×０．２ｍｍのチップを得た。
【００８８】
（９）それから、このチップをアセトン中で超音波洗浄し、乾燥させることにより、寸法が０．４ｍｍ×０．２ｍｍ×０．２ｍｍの薄膜積層チップコンデンサを得た。図２０は、得られた薄膜積層チップコンデンサを示す図である。図２０に示すようにこの薄膜積層チップコンデンサ１０ａは、成膜基板１と、成膜基板１上に薄膜誘電体２，２ａ，２ｂと、薄膜内部電極３を交互に積層することにより形成された積層体４と、積層体４の上面側に、ガラス層３２を介して接合された保護基板３１と、成膜基板１、積層体４及び保護基板３１を備えた積層構造体５のカット端面５ａから、保護基板３１の上面側に回り込むような態様で配設された外部電極７とを備えている。
【００８９】
このようにして得られた薄膜積層チップコンデンサ１０ａを、図２１に示すように配線基板２１上にはんだ付けし、外部電極７をはんだ２０により配線基板２１上の端子２２に接続し、得られる静電容量の値を測定した。１ｋＨｚ，１００ｍＶで２０個測定を行った結果、平均値で静電容量１１．５ｎＦ、誘電正接１．４％の良好な特性が得られることが確認された。
【００９０】
また、この実施形態２では、保護基板として、熱膨張係数が薄膜誘電体の熱膨張係数よりも大きいものを用いているので、薄膜誘電体に引張り応力が生じることを抑制して、信頼性を損なうことなくチップ加工を行うことが可能になり、ショートやリーク電流を抑えて信頼性を向上させることができる。
【００９１】
なお、上記実施形態１及び２では薄膜積層チップコンデンサを例にとって説明したが、本願発明は、他の薄膜積層電子部品にも適用することが可能である。
【００９２】
また、上記実施形態１及び２ではハーフカット溝を形成することにより外部電極を分割するようにしているが、マスクを用いて所定の２箇所以上の位置に外部電極を分割形成するように構成することも可能である。
【００９３】
本願発明は、さらにその他の点においても上記実施形態に限定されるものではなく、基板、薄膜誘電体及び薄膜内部電極を構成する材料や具体的な形状、形成方法、薄膜誘電体と薄膜内部電極の積層数、外部電極、保護層、保護基板を構成する材料や形成方法、各薄膜内部電極の具体的な位置ずれ量などに関し、発明の範囲内において、種々の応用、変形を加えることが可能である。
【００９４】
【発明の効果】
上述のように、本願発明（請求項１）の薄膜積層電子部品の製造方法は、成膜基板上に形成された積層体の上面に保護層を形成した状態で、薄膜内部電極が位置ずれした部分を、該位置ずれ方向と略直交する方向に、保護層側からカットすることにより、積層体を厚み方向全体にカットし、成膜基板を厚み方向途中部分までカットするようなハーフカット溝を形成するとともに、積層構造体の表面の所定の位置に外部電極を形成した後、保護層側とは反対側の面から、成膜基板の少なくともハーフカット溝に対応する位置を、ハーフカット溝にまで達するまで除去することにより、ハーフカット溝を貫通させるようにしているので、積層構造体を成膜基板ごとに個々の素子に分割する前の段階で、外部電極を効率よく形成することができるようになる。すなわち、本願発明（請求項１）の薄膜積層電子部品の製造方法によれば、個々の素子に分割した後、外部電極を形成する場合のようなハンドリングの困難さを伴わずに、効率よく、かつ、経済的に、小型、高性能の薄膜積層電子部品を製造することができる。
また、保護層側とは反対側の面から、成膜基板の少なくともハーフカット溝に対応する位置を、ハーフカット溝にまで達するまで除去することにより、ハーフカット溝を貫通させるようにしているので、積層構造体のハーフカット端面に形成された外部電極が除去されてしまうことがなく、外部電極と薄膜内部電極との接続信頼性の高い薄膜積層電子部品を効率よく製造することが可能になる。
また、積層体の上面に保護層を形成しているので、耐湿性や耐衝撃性などに優れた信頼性の高い薄膜積層電子部品を提供することができる。
【００９５】
また、請求項２の薄膜積層電子部品の製造方法のように、外部電極の、保護層の上面に形成されている部分の一部を除去することによって、外部電極を２以上に分割するようにした場合、マスクを用いて所定の位置に外部電極を形成する場合に比べて、位置精度よく外部電極を形成することが可能になり、コストの低減を図ることができる。
【００９６】
また、請求項３の薄膜積層電子部品の製造方法のように、ハーフカット溝を貫通させるにあたって、保護層側とは反対側の面から、成膜基板の全面を研磨してハーフカット溝を貫通させることにより、成膜基板の厚みを薄くして、薄膜積層電子部品全体の高さを低くすることが可能になり、より一層の低背化を図ることができるようになる。
【００９７】
また、請求項４の薄膜積層電子部品の製造方法のように、保護層の構成材料として、ガラスやポリイミドを用いることにより、厚みの大きい保護層を形成して、十分な機械的補強効果を得ることができる。
【００９８】
また、請求項５の薄膜積層電子部品の製造方法のように、保護層の表面粗さを増大させた後、外部電極を形成することにより、外部電極と保護層の密着強度が上昇し、ハーフカット時の外部電極の剥離を防止することが可能になる。
【００９９】
また、本願発明（請求項６）の薄膜積層電子部品の製造方法においては、成膜基板上に形成された積層体の上面に保護基板を接合した状態で、保護基板側からカットすることにより、積層体を厚み方向全体にカットし、成膜基板を厚み方向途中部分までカットするようなハーフカット溝を形成するとともに、積層構造体の表面の所定の位置に外部電極を形成した後、保護基板側とは反対側の面から、ハーフカット溝にまで達する溝を形成するようにしているので、積層構造体を成膜基板ごとに個々の素子に分割する前の段階で、外部電極を効率よく形成することができるようになる。すなわち、本願発明（請求項６）の薄膜積層電子部品の製造方法によれば、個々の素子に分割した後、外部電極を形成する場合のようなハンドリングの困難さを伴わずに、効率よく、かつ、経済的に、小型、高性能の薄膜積層電子部品を製造することができる。
また、保護基板側とは反対側の面から、成膜基板の少なくともハーフカット溝に対応する位置を、ハーフカット溝にまで達するまで除去することにより、ハーフカット溝を貫通させるようにしているので、積層構造体のハーフカット端面に形成された外部電極が除去されてしまうことがなく、外部電極と薄膜内部電極との接続信頼性の高い薄膜積層電子部品を効率よく製造することが可能になる。
また、積層体の上面に保護基板を配設しているので、耐湿性や耐衝撃性などに優れた信頼性の高い薄膜積層電子部品を提供することが可能になる。
なお、保護基板としては、耐熱性を備えた種々の絶縁物を用いることが可能である。
また、積層体の上面に保護基板を接合するにあたっては、種々の接合剤を介して積層体の上面に保護基板を接合することが可能である。
【０１００】
請求項７の薄膜積層電子部品の製造方法のように、外部電極の、保護基板の上面に形成されている部分の一部を除去することによって、外部電極を２以上に分割するようにした場合、マスクを用いて所定の位置に外部電極を形成する場合に比べて、位置精度よく外部電極を形成することが可能になり、コストの低減を図ることができる。
【０１０１】
また、請求項８の薄膜積層電子部品の製造方法のように、ハーフカット溝を貫通させるにあたって、保護基板側とは反対側の面から、成膜基板の全面を研磨してハーフカット溝を貫通させることにより、成膜基板の厚みを薄くして、薄膜積層電子部品全体の高さを低くすることが可能になり、より一層の低背化を図ることができる。
【０１０２】
また、請求項９の薄膜積層電子部品の製造方法のように、保護基板として、少なくともその一方の主面にガラスペーストが焼き付けられた保護基板を用い、該ガラスペーストを焼き付けることにより形成されるガラス層を介して保護基板を積層体に接合することにより、容易かつ確実に積層体の上面に保護基板が接合された積層構造体を形成することが可能になる。
【０１０３】
また、請求項１０の薄膜積層電子部品の製造方法のように、保護基板として、熱膨張係数が薄膜誘電体の熱膨張係数よりも大きいものを用いることにより、薄膜誘電体に引張り応力が生じることを抑制して、信頼性を損なうことなくチップ加工を行うことが可能になる。すなわち、積層構造体に保護基板を圧着する際に、高温で圧着される場合には、室温まで冷却する過程で薄膜誘電体よりも保護基板の方が収縮量が多くなり、薄膜誘電体に圧縮応力が加わることによって、ショートやリーク電流を抑えることが可能になり、信頼性を向上させることができるようになる。
【０１０４】
また、保護基板の接合方法としては、接着剤を用いることなども可能ではあるが、請求項１１の薄膜積層電子部品の製造方法のように、例えば、ガラス層を介して保護基板を積層体に接合する場合、熱圧着の方法により、容易かつ確実に保護基板の接合を行うことが可能になる。
【０１０５】
また、請求項１２の薄膜積層電子部品の製造方法のように、ガラスペーストの焼き付け温度よりも低い温度で熱圧着することにより、圧着時にガラスペーストが溶融して流れ出してしまうことを防止することが可能になる。
【０１０６】
また、請求項１３の薄膜積層電子部品の製造方法のように、積層体と保護基板を、薄膜誘電体の成膜温度よりも低い温度で熱圧着することにより、薄膜誘電体の変質によるショート不良などの発生を抑制、防止して、信頼性を向上させることができる。
【０１０７】
また、請求項１４の薄膜積層電子部品の製造方法のように、本願発明の薄膜積層電子部品の製造方法を、成膜基板上に薄膜誘電体と薄膜内部電極が交互に積層され、かつ、所定の薄膜内部電極と導通する外部電極が配設された構造を有する薄膜積層コンデンサの製造方法に適用した場合に、超小型、大容量で、信頼性の高い薄膜積層コンデンサを効率よく、しかも経済的に製造することが可能になる。
【０１０８】
また、本願発明（請求項１５）の薄膜積層電子部品は、積層体の上面側に、保護層が配設されており、かつ、外部電極が、積層構造体のカット端面（積層体の薄膜内部電極の取り出し面が含まれている）から、保護層の上面側に回り込むような態様で配設された構造を有しており、上述の本願請求項１の方法により、効率よく製造することが可能であることから、小型、高性能の薄膜積層電子部品を低コストで提供することができる。
【０１０９】
また、請求項１６の薄膜積層電子部品のように、保護層にガラス又はポリイミドを用いることにより、厚みの大きい保護層を備えた、信頼性の高い薄膜積層電子部品を提供することが可能になる。
【０１１０】
また、請求項１７の薄膜積層電子部品は、保護層の表面粗さを増大させる処理を施しているので、保護層上に形成された外部電極の、保護層に対する密着強度が上昇し、ハーフカット時の外部電極の剥離を防止することができる。
【０１１１】
また、本願発明（請求項１８）の薄膜積層電子部品は、積層体の上面側に、保護基板が接合されており、かつ、外部電極が、積層構造体のカット端面（積層体の薄膜内部電極の取り出し面が含まれている）から、保護基板の上面側に回り込むような態様で配設された構造を有しており、上述の本願請求項６の方法により、効率よく製造することが可能であることから、小型、高性能の薄膜積層電子部品を低コストで提供することが可能になる。
【０１１２】
また、請求項１９の薄膜積層電子部品は、ガラス層を介して保護基板が積層体に接合されており、保護基板が高い保護機能を発揮するため、信頼性を向上させることが可能になる。
【０１１３】
また、請求項２０の薄膜積層電子部品のように、保護基板として、熱膨張係数が薄膜誘電体の熱膨張係数よりも大きいものを用いることにより、薄膜誘電体に引張り応力が生じることを抑制して、信頼性を向上させることが可能になる。
すなわち、積層構造体に保護基板を圧着する際に、高温で圧着される場合には、室温まで冷却する過程で薄膜誘電体よりも保護基板の方が収縮量が多くなり、薄膜誘電体に圧縮応力が加わることによって、ショートやリーク電流を抑えることが可能になり、信頼性を向上させることが可能になる。
【０１１４】
また、請求項２１のように、本願発明を、成膜基板上に薄膜誘電体と薄膜内部電極が交互に積層され、かつ、所定の薄膜内部電極と導通する外部電極が配設された構造を有する薄膜積層コンデンサに適用することにより、超小型、大容量で信頼性が高く、しかも経済性に優れた薄膜積層コンデンサを提供することが可能になる。
【図面の簡単な説明】
【図１】本願発明の一実施形態（実施形態１）において、基板上に薄膜誘電体及び薄膜内部電極を積層することにより形成された積層体を示す透視平面図である。
【図２】本願発明の実施形態１において形成した積層体の要部を示す正面断面図である。
【図３】本願発明の実施形態１において、基板上に積層体が形成された積層構造体にハーフカット溝を形成した状態を示す透視平面図である。
【図４】本願発明の実施形態１において、基板上に積層体が形成された積層構造体にハーフカット溝を形成した状態を示す正面断面図である。
【図５】本願発明の実施形態１において、ハーフカット溝を形成した積層構造体に外部電極を形成した状態を示す正面断面図である。
【図６】本願発明の実施形態１において、積層構造体の上面にハーフカット溝を形成して外部電極を２つに分割した状態を示す正面断面図である。
【図７】本願発明の実施形態１において、異なる方向のハーフカット溝を形成した状態を示す平面図である。
【図８】本願発明の実施形態１において、成膜基板の底面を研磨して、薄膜積層電子部品（薄膜積層コンデンサ）を得る工程を示す図である。
【図９】本願発明の実施形態１において得た薄膜積層電子部品（薄膜積層コンデンサ）を示す断面図である。
【図１０】本願発明の実施形態１において得た薄膜積層電子部品（薄膜積層コンデンサ）のマウント方法の一例を示す図である。
【図１１】本願発明の一実施形態（実施形態２）において、基板上に薄膜誘電体及び薄膜内部電極を積層することにより形成された積層体を示す透視平面図である。
【図１２】本願発明の実施形態２において形成した積層体の要部を示す正面断面図である。
【図１３】本願発明の実施形態２において形成した積層構造体の要部を示す正面断面図である。
【図１４】本願発明の実施形態２において、基板上に積層体が形成された積層構造体にハーフカット溝を形成した状態を示す透視平面図である。
【図１５】本願発明の実施形態２において、基板上に積層体が形成された積層構造体にハーフカット溝を形成した状態を示す正面断面図である。
【図１６】本願発明の実施形態２において、ハーフカット溝を形成した積層構造体に外部電極を形成した状態を示す正面断面図である。
【図１７】本願発明の実施形態２において、積層構造体の上面にハーフカット溝を形成して外部電極を２つに分割した状態を示す正面断面図である。
【図１８】本願発明の実施形態２において、異なる方向のハーフカット溝を形成した状態を示す透視平面図である。
【図１９】本願発明の実施形態２において、成膜基板の底面を研磨して、薄膜積層電子部品（薄膜積層コンデンサ）を得る工程を示す図である。
【図２０】本願発明の実施形態２において得た薄膜積層電子部品（薄膜積層コンデンサ）を示す断面図である。
【図２１】本願発明の実施形態２において得た薄膜積層電子部品（薄膜積層コンデンサ）のマウント方法の一例を示す図である。
【符号の説明】
１ 成膜基板
２（２ａ，２ｂ） 薄膜誘電体
３（３ａ，３ｂ） 薄膜電極（薄膜内部電極）
４ 積層体
５ 積層構造体
５ａ 積層構造体のカット端面
６ ガラス層（保護層）
７ 外部電極
１０，１０ａ 薄膜積層チップコンデンサ
１１，１２，１３ ハーフカット溝
２０ はんだ
２１ 配線基板
２２ 端子
３１ 保護基板
３２ ガラス層
Ｌ_０ 重なり部分の長さ
Ｗ_１，Ｗ_２ 薄膜電極の幅
Ｘ 所定の一方向[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a multilayer electronic component, and more particularly, to a method for manufacturing a thin film multilayer electronic component such as a thin film multilayer capacitor that is small and capable of obtaining a relatively large capacity, and a thin film multilayer electronic component.
[0002]
[Prior art]
For example, a multilayer ceramic capacitor, which is one of typical multilayer electronic components, is usually manufactured by the method described below.
(1) First, an electrode paste is printed on a ceramic green sheet cut to a predetermined size and dried.
(2) Then, a predetermined number of ceramic green sheets are stacked, and ceramic green sheets on which no electrode paste is printed are stacked on both upper and lower sides thereof, and then a laminated body is formed by pressure bonding under predetermined conditions. .
(3) Then, this laminate is cut and divided into individual elements, and then heat-treated to perform binder removal and firing.
(4) Next, an external electrode is formed by applying and baking an electrode paste on each element (sintered body).
[0003]
Conventionally, in this manner, a plurality of internal electrodes are disposed in the ceramic element through the ceramic layer, and external electrodes that are electrically connected to the predetermined internal electrode are disposed at predetermined positions of the ceramic element. A chip-type multilayer ceramic capacitor having a structure is manufactured.
[0004]
However, in the case of the above conventional method for manufacturing a multilayer ceramic capacitor, since the thickness of the dielectric layer is restricted by the particle size of the ceramic raw material powder, the dielectric layer (ceramic layer) thinner than the particle size of the ceramic raw material powder. It is impossible to form
Further, in the above conventional manufacturing method, it is difficult to reduce the thickness of the dielectric layer to 3 μm or less in order to prevent short-circuits and electrode breaks due to defects in the dielectric layer (ceramic layer) and to ensure reliability. In fact, the fact that monolithic ceramic capacitors are limited in size and capacity.
[0005]
In order to solve the above problems, a method of manufacturing a thin film multilayer capacitor in which a dielectric layer and an internal conductor layer are formed by sputtering, which is one of thin film forming methods, has been proposed (for example, patents). Reference 1). According to this method, Al is formed on the substrate by sputtering. ₂ O ₃ , SiO ₂ TiO ₂ , BaTiO ₃ The thin film (thin film dielectric) and the electrode film (thin film internal electrode) are formed, and the external electrode serving as the lead terminal from the electrode film is formed by applying and baking the electrode paste. A multilayer ceramic capacitor can be obtained.
[0006]
Also, on the insulating substrate, three or more layers of thin film internal electrodes and two or more layers of thin film dielectric (BaTiO ₃ A multilayer capacitor that forms a thin film laminate composed of a thin film, etc., extends the end of the internal electrode layer outward, and forms external electrodes on both ends of the insulating substrate including the extended portion by a dry method ( A method of manufacturing a multilayer thin film capacitor) has been proposed (see, for example, Patent Document 2).
[0007]
Further, a method has been proposed in which a thin film capacitor is formed on a wafer to be a substrate, a passivation layer and a cover layer are formed thereon, and then the wafer is lapped to obtain a desired thickness (for example, Patent Documents). 3). In this method, a lapped wafer is bonded to a carrier such as a glass sheet using a temporary adhesive, and after making parallel cuts through the wafer, external electrodes are formed by sputtering using a shadow mask. ing. Further, after dicing through the wafer for chip separation, a capacitor is obtained by dissolving or peeling the temporary adhesive.
[0008]
[Patent Document 1]
JP-A-56-144523
[Patent Document 2]
JP-A-2-121313
[Patent Document 3]
JP-T-2001-523898
[0009]
[Problems to be solved by the invention]
However, in the multilayer capacitor manufacturing method using the thin film forming methods of Patent Documents 1 and 2, the external electrode is formed on the end surface including the substrate. Therefore, before the external electrode is formed, the substrate is formed on the substrate. It is necessary to cut the formed thin film laminate and process it into a chip shape. When manufacturing an ultra-small chip capacitor, if an external electrode is formed after being divided (cut) from a wafer state at the time of thin film formation into a chip state, handling in the external electrode formation process is difficult and production efficiency is reduced. There is a problem of being extremely bad.
[0010]
In the case of the method of processing after temporarily bonding a wafer on which a thin film capacitor is formed in Patent Document 3 to a carrier, the problem as described in Patent Document 1 or 2 does not occur. However, it is necessary to perform lapping to the thickness as a chip capacitor, and there is a problem that it cannot be made very thin due to the handling of the wafer after lapping.
[0011]
The above-mentioned problem is not limited to the case of the thin film multilayer capacitor, but also applies to other thin film multilayer electronic components.
[0012]
The present invention solves the above-described problems, and can efficiently and economically produce a thin-film laminated electronic component having a small size and a high performance, and a method for producing such a thin-film laminated electronic component. An object of the present invention is to provide a thin film laminated electronic component that can be manufactured well.
[0013]
[Means for Solving the Problems]
In order to achieve the above object, a method for manufacturing a thin film laminated electronic component of the present invention (Claim 1)
Thin film multilayer electronic component comprising: a film formation substrate; a laminate formed by alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate; and an external electrode electrically connected to a predetermined thin film internal electrode In the manufacturing method of
(A) By alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate, the thin film internal electrodes facing each other through the thin film dielectric are alternately displaced in a predetermined direction. Forming a laminated body provided; and
(B) providing a protective layer on the top surface of the laminate;
(C) In the laminated structure provided with the film formation substrate, the laminated body, and the protective layer, the protective layer is arranged in a direction substantially perpendicular to the misalignment direction at a position where the thin film internal electrode constituting the laminated body is misaligned. By cutting from the side, the laminate is cut in the entire thickness direction, and the step of forming a half cut groove for cutting the film formation substrate to the middle in the thickness direction,
(D) forming an external electrode at a predetermined position on the surface of the laminated structure;
(E) The half-cut groove is penetrated by removing at least a position corresponding to the half-cut groove of the film formation substrate from the surface opposite to the protective layer side until reaching the half-cut groove. Process
It is characterized by comprising.
[0014]
In the method for manufacturing a thin film laminated electronic component according to the present invention (Claim 1), the portion where the thin film internal electrode is displaced in a state where the protective layer is formed on the upper surface of the laminate formed on the film formation substrate, By cutting from the protective layer side in a direction substantially perpendicular to the displacement direction, the laminate is cut in the entire thickness direction, and a half-cut groove is formed that cuts the film formation substrate to the middle in the thickness direction, After forming the external electrode at a predetermined position on the surface of the laminated structure, remove at least the position corresponding to the half-cut groove on the film formation substrate from the surface opposite to the protective layer until it reaches the half-cut groove. By doing so, since the half-cut grooves are penetrated, it is possible to efficiently form the external electrodes at a stage before the laminated structure is divided into individual elements for each film formation substrate.
That is, according to the method for manufacturing a thin-film laminated electronic component of the present invention (Claim 1), after dividing into individual elements, without the difficulty of handling as in the case of forming an external electrode, efficiently, And economically, it becomes possible to manufacture a small-sized and high-performance thin-film laminated electronic component.
[0015]
In addition, since the position corresponding to at least the half cut groove of the film formation substrate is removed from the surface opposite to the protective layer side until reaching the half cut groove, the half cut groove is penetrated. The external electrode formed on the half-cut end face of the multilayer structure is not removed, and it is possible to efficiently manufacture a thin film multilayer electronic component with high connection reliability between the external electrode and the thin film internal electrode. .
[0016]
Further, since the protective layer is formed on the upper surface of the laminated body, it is possible to provide a highly reliable thin film laminated electronic component having excellent moisture resistance and impact resistance.
[0017]
Further, in the method of manufacturing a thin film multilayer electronic component according to claim 2, in forming the external electrode, after forming the external electrode on the upper surface of the protective layer and the half-cut end surface of the multilayer structure, An external electrode divided into two or more is formed by removing a part of the portion formed on the upper surface.
[0018]
When the external electrode is divided into two or more by removing a part of the external electrode formed on the upper surface of the protective layer, and when the external electrode is formed at a predetermined position using a mask Compared to the above, it becomes possible to form the external electrode with high positional accuracy, and it is possible to reduce the cost.
[0019]
Further, in the method of manufacturing a thin film laminated electronic component according to claim 3, in the step of penetrating the half cut groove, the entire surface of the film formation substrate is polished from the surface opposite to the protective layer side, It is characterized by penetrating a half-cut groove.
[0020]
When penetrating the half-cut groove, the entire surface of the film-forming substrate is polished from the surface opposite to the protective layer side to penetrate the half-cut groove, thereby reducing the thickness of the film-forming substrate and thin-film stacked electrons. It becomes possible to reduce the height of the entire part, and to further reduce the height.
[0021]
According to a fourth aspect of the present invention, there is provided a method for producing a thin film laminated electronic component, wherein the protective layer is made of glass or polyimide.
[0022]
By using glass or polyimide as a constituent material of the protective layer, it is possible to form a protective layer having a large thickness and obtain a sufficient mechanical reinforcement effect.
[0023]
According to a fifth aspect of the present invention, there is provided a method of manufacturing a thin film laminated electronic component including a step of increasing the surface roughness of the protective layer before the step of forming the external electrode.
[0024]
By forming the external electrode after increasing the surface roughness of the protective layer, the adhesion strength between the external electrode and the protective layer is increased, and it is possible to prevent the external electrode from being peeled off during half-cutting.
[0025]
Moreover, the manufacturing method of the thin film laminated electronic component of the present invention (Claim 6) is as follows:
Thin film multilayer electronic component comprising: a film formation substrate; a laminate formed by alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate; and an external electrode electrically connected to a predetermined thin film internal electrode In the manufacturing method of
(A) By alternately laminating thin film current collectors and thin film internal electrodes on the film formation substrate, the respective thin film internal electrodes facing each other via the thin film dielectric are alternately displaced in a predetermined direction. Forming a disposed laminate; and
(B) bonding a protective substrate to the upper surface of the laminate;
(C) In the laminated structure including the film formation substrate, the laminate, and the protective substrate, the protective substrate in a direction substantially perpendicular to the misalignment direction in the misaligned portion of the thin film internal electrode constituting the laminate. By cutting from the side, the laminate is cut in the entire thickness direction, and the step of forming a half cut groove for cutting the film formation substrate to the middle in the thickness direction,
(D) forming an external electrode at a predetermined position on the surface of the laminated structure;
(E) The half-cut groove is penetrated by removing at least a position corresponding to the half-cut groove of the film-forming substrate from the surface opposite to the protective substrate side until reaching the half-cut groove. Process
It is characterized by comprising.
[0026]
In the method for manufacturing a thin film laminated electronic component according to the present invention (Claim 6), the laminated body is cut from the protective substrate side in a state where the protective substrate is bonded to the upper surface of the laminated body formed on the film formation substrate. Are cut in the entire thickness direction, forming a half-cut groove that cuts the film formation substrate to the middle in the thickness direction, and forming an external electrode at a predetermined position on the surface of the laminated structure. Since a groove reaching the half-cut groove is formed from the opposite surface, external electrodes are efficiently formed before the laminated structure is divided into individual elements for each film formation substrate. It becomes possible.
[0027]
That is, according to the method for manufacturing a thin-film laminated electronic component of the present invention (Claim 6), it is efficiently divided without difficulty in handling as in the case of forming an external electrode after being divided into individual elements, And economically, it becomes possible to manufacture a small-sized and high-performance thin-film laminated electronic component.
[0028]
In addition, since the position corresponding to at least the half cut groove of the film formation substrate is removed from the surface opposite to the protective substrate side until reaching the half cut groove, the half cut groove is penetrated. The external electrode formed on the half-cut end face of the multilayer structure is not removed, and it is possible to efficiently manufacture a thin film multilayer electronic component with high connection reliability between the external electrode and the thin film internal electrode. .
[0029]
Further, since the protective substrate is disposed on the upper surface of the laminate, it is possible to provide a highly reliable thin film laminated electronic component having excellent moisture resistance and impact resistance.
Note that various insulating materials having heat resistance can be used as the protective substrate. Moreover, when bonding a protective substrate to the upper surface of a laminated body, it is possible to bond a protective substrate to the upper surface of a laminated body through various bonding agents.
[0030]
Further, in the method of manufacturing a thin film multilayer electronic component according to claim 7, in forming the external electrode, after forming the external electrode on the upper surface of the protective substrate and the half-cut end surface of the multilayer structure, An external electrode divided into two or more is formed by removing a part of the portion formed on the upper surface.
[0031]
When the external electrode is divided into two or more by removing a part of the external electrode formed on the upper surface of the protective substrate, and when the external electrode is formed at a predetermined position using a mask Compared to the above, it becomes possible to form the external electrode with high positional accuracy, and it is possible to reduce the cost.
[0032]
The thin-film laminated electronic component manufacturing method according to claim 8 is characterized in that in the step of penetrating the half-cut groove, the half-cut groove is penetrated by polishing the entire surface of the film formation substrate.
[0033]
In the process of penetrating the half-cut groove, the entire surface of the film-forming substrate is polished from the surface opposite to the protective substrate side to penetrate the half-cut groove, thereby reducing the thickness of the film-forming substrate and thin film stacking It becomes possible to reduce the height of the entire electronic component, and to further reduce the height.
[0034]
According to a ninth aspect of the present invention, there is provided a method of manufacturing a thin film multilayer electronic component comprising: a protective substrate having a glass paste baked on at least one main surface thereof as a protective substrate in the step of bonding the protective substrate to the upper surface of the multilayer body. It is characterized in that the protective substrate is joined to the laminate through a glass layer formed by baking the glass paste.
[0035]
By bonding a protective substrate to the laminate through the glass layer, it becomes possible to easily and reliably form a laminated structure in which the protective substrate is bonded to the upper surface of the laminate, and the present invention is implemented. It can be tightened.
[0036]
According to a tenth aspect of the present invention, there is provided a method for manufacturing a thin film multilayer electronic component, wherein the protective substrate is one having a thermal expansion coefficient larger than that of the thin film dielectric.
[0037]
By using a protective substrate having a thermal expansion coefficient larger than that of the thin film dielectric, it is possible to suppress the occurrence of tensile stress in the thin film dielectric and perform chip processing without impairing reliability. It becomes possible. In other words, when the protective substrate is pressure-bonded to the laminated structure, if it is pressure-bonded at a high temperature, the protective substrate shrinks more than the thin-film dielectric during the process of cooling to room temperature, and is compressed into the thin-film dielectric. Stress is applied. As a result, it is possible to suppress a short circuit and a leakage current, and it is possible to improve reliability.
[0038]
The method for manufacturing a thin film multilayer electronic component according to claim 11 is characterized in that, in the step of bonding a protective substrate to the upper surface of the multilayer body, the multilayer body and the protective substrate are bonded by thermocompression bonding.
[0039]
Although it is possible to use an adhesive as a method for bonding the protective substrate, for example, when the protective substrate is bonded to the laminate through a glass layer, the protective substrate can be easily and reliably bonded by a thermocompression bonding method. Bonding can be performed.
[0040]
Moreover, the manufacturing method of the thin film multilayer electronic component of Claim 12 WHEREIN: In the process of joining a protective substrate to the upper surface of the said laminated body, the said laminated body and the said protective substrate are temperature lower than the baking temperature of the said glass paste. It is characterized by being joined by thermocompression bonding.
[0041]
By thermocompression bonding at a temperature lower than the baking temperature of the glass paste, it is possible to prevent the glass paste from melting and flowing out during the compression bonding. Even if the glass paste does not melt to such a state that it flows out, it can be crimped if it softens to some extent.
[0042]
Further, in the method of manufacturing a thin film multilayer electronic component according to claim 13, in the step of bonding a protective substrate to the upper surface of the multilayer body, the multilayer body and the protective substrate are lower than a film formation temperature of the thin film dielectric. It is characterized by being bonded by thermocompression bonding at a temperature.
[0043]
By thermocompression bonding the laminated body and the protective substrate at a temperature lower than the film forming temperature of the thin film dielectric, the occurrence of short-circuit defects due to the deterioration of the thin film dielectric can be suppressed and prevented, and the reliability can be improved. It becomes possible.
[0044]
In the method of manufacturing a thin film laminated electronic component according to claim 14, thin film dielectrics and thin film internal electrodes are alternately laminated on a film formation substrate, and external electrodes that are electrically connected to predetermined thin film internal electrodes are disposed. It is used when manufacturing a thin film multilayer capacitor having a structure.
[0045]
The method of manufacturing a thin film multilayer electronic component according to the present invention has a structure in which thin film dielectrics and thin film internal electrodes are alternately stacked on a film formation substrate, and external electrodes that are electrically connected to predetermined thin film internal electrodes are disposed. When applied to a method for manufacturing a thin film multilayer capacitor, it is possible to manufacture an ultra-small, large-capacity and highly reliable thin film multilayer capacitor efficiently and economically, which is particularly significant.
[0046]
Moreover, the thin film laminated electronic component of the present invention (Claim 15) is:
Thin film multilayer electronic component comprising: a film formation substrate; a laminate formed by alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate; and an external electrode electrically connected to a predetermined thin film internal electrode Because
A protective layer is disposed on the upper surface side of the laminate, and
The external electrode is arranged in such a manner as to wrap around the upper surface side of the protective layer from the cut end surface of the laminated structure including the film formation substrate, the laminated body, and the protective layer.
[0047]
In the thin film laminated electronic component of the present invention (Claim 15), the protective layer is disposed on the upper surface side of the laminated body, and the external electrode is a cut end face of the laminated structure (the thin film internal electrode of the laminated body). It has a structure that is arranged in such a manner as to wrap around the upper surface side of the protective layer from the extraction surface is included, and can be efficiently manufactured by the method of claim 1 of the present application. Therefore, it is possible to provide a small-sized and high-performance thin film laminated electronic component at a low cost.
[0048]
The thin film laminated electronic component of claim 16 is characterized in that the protective layer is made of glass or polyimide.
[0049]
By using glass or polyimide for the protective layer, it is possible to provide a highly reliable thin film laminated electronic component having a thick protective layer.
[0050]
The thin film multilayer electronic component according to claim 17 is characterized in that the protective layer is subjected to a treatment for increasing the surface roughness.
[0051]
Since the surface roughness of the protective layer is increased, the adhesion strength of the external electrode formed on the protective layer to the protective layer is increased, and it is possible to prevent the external electrode from peeling off during half-cutting. become.
[0052]
The thin film laminated electronic component of the present invention (claim 18) is
Thin film multilayer electronic component comprising: a film formation substrate; a laminate formed by alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate; and an external electrode electrically connected to a predetermined thin film internal electrode Because
A protective substrate is bonded to the upper surface side of the laminate, and
The external electrode is arranged in such a manner that the external electrode wraps around the upper surface side of the protective substrate from the cut end surface of the laminated structure including the film formation substrate, the laminated body, and the protective substrate.
[0053]
In the thin film laminated electronic component of the present invention (claim 18), the protective substrate is bonded to the upper surface side of the laminated body, and the external electrode is a cut end face of the laminated structure (takeout of the thin film internal electrode of the laminated body) It is possible to manufacture efficiently by the method of claim 6 of the present application described above. Therefore, it is possible to provide a small-sized and high-performance thin film laminated electronic component at a low cost.
[0054]
The thin-film laminated electronic component according to claim 19 is characterized in that the laminate and the protective substrate are bonded via a glass layer baked with a glass paste.
[0055]
Since the protective substrate is bonded to the laminate through the glass layer and the protective substrate exhibits a high protection function, the reliability can be improved.
[0056]
The thin-film multilayer electronic component according to claim 20 is characterized in that the protective substrate has a thermal expansion coefficient larger than that of the thin-film dielectric.
[0057]
Since a protective substrate having a thermal expansion coefficient larger than that of the thin film dielectric is used, it is possible to suppress the generation of tensile stress in the thin film dielectric and improve reliability. .
In other words, when the protective substrate is pressure-bonded to the laminated structure, if it is pressure-bonded at a high temperature, the protective substrate shrinks more than the thin-film dielectric during the process of cooling to room temperature, and is compressed into the thin-film dielectric. By applying the stress, it is possible to suppress a short circuit and a leakage current, and it is possible to improve reliability.
[0058]
The thin film laminated electronic component of claim 21 has a structure in which thin film dielectrics and thin film internal electrodes are alternately laminated on a film formation substrate, and an external electrode that is electrically connected to a predetermined thin film internal electrode is disposed. It is a thin film multilayer capacitor.
[0059]
By applying the present invention to a thin-film multilayer capacitor having a structure in which thin-film dielectrics and thin-film internal electrodes are alternately stacked on a film-forming substrate and an external electrode that is electrically connected to a predetermined thin-film internal electrode is disposed. It is possible to provide a thin film multilayer capacitor that is ultra-compact, large-capacity, highly reliable, and excellent in economic efficiency.
[0060]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be shown, and the features thereof will be described in more detail.
[0061]
[Embodiment 1]
In the first embodiment, a case where a thin film multilayer capacitor is manufactured as a thin film multilayer electronic component will be described as an example.
[0062]
(1) First, as shown in FIG. 1, thin film dielectrics 2 and thin film electrodes (thin film internal electrodes) 3 are alternately formed on a 0.5 mm thick, 50 mm square film formation substrate (crystallized glass substrate) 1. By laminating, the laminated body 4 in which the thin film internal electrodes 3 opposed to each other through the thin film dielectric 2 are alternately displaced in a predetermined direction (direction of arrow X in FIG. 1) is arranged. Formed (see FIG. 2).
Specifically, as the thin film dielectric 2 (2a), (Ba, Sr) TiO having a thickness of 150 nm is used. ₃ Is formed on the entire surface of the film formation substrate 1 at a film formation substrate temperature of 600 ° C., and then a 130 nm-thick Pt layer (thin film internal electrode) 3 having a predetermined planar shape, and 120 nm-thick (Ba, Sr). TiO ₃ The layer (thin film dielectric) 2 was formed, and this film forming process was repeated to form the thin film dielectric 2 and the thin film internal electrodes 3 (3a, 3b) alternately. Finally, (Ba, Sr) TiO ₃ Layer (thin film dielectric) 2 (2b) was deposited to a thickness of 150 nm.
The thin film dielectrics 2, 2a, 2b were formed on the entire surface of the film formation substrate 1 using the MOCVD method.
The thin film internal electrode 3 was formed by sputtering using a Si shadow mask. As the Si shadow mask, a shadow mask having a predetermined pattern produced by anisotropic etching was used.
The thin film internal electrode 3 has a width (W ₁ ) 0.1 mm Pt layer 3 (3a) and width (W ₂ ) 0.12 mm Pt layer 3 (3b) ₀ ) Were alternately formed so as to be 260 μm.
[0063]
(2) Then, a glass paste was applied on the thin film dielectric 2 (2b) on the upper surface side of the laminate 4 by a spin coating method. This glass paste is produced by blending a binder and an organic vehicle with Bi-B-Si-Al glass to make a paste. In the first embodiment, Bi-B-Si-Al glass having a glass transition point of 450 ° C. and a glass softening point of 480 ° C. is used.
After applying the glass paste, it is dried, and the protective layer is formed by baking in the air under the conditions shown in Table 1 with the glass paste application surface facing up. As shown in FIG. 1, the laminated structure 5 provided with the laminated body 4 and the glass layer 6 was obtained. In addition, the thickness of the glass layer 6 after baking is about 40 micrometers.
[0064]
[Table 1]

[0065]
(3) Next, the surface opposite to the protective layer 6 side of the laminated structure 5 formed by forming the laminated body 4 and the protective layer 6 on the film formation substrate 1 by the above method is an adhesive surface. A support jig (not shown) was affixed with wax, and polished using # 800 water-resistant paper until the thickness of the protective layer 6 was 30 μm.
[0066]
(4) After that, the laminated structure 5 is peeled off from the support jig and subjected to ultrasonic cleaning with acetone, and then attached to the dicing tape so that the surface on the side opposite to the protective layer 6 is an adhesive surface. As shown in FIG. 4, a half-cut groove 11 was formed by half-cutting the portion where the thin film internal electrode 3 was displaced to a depth of 0.11 mm using a dicing saw.
[0067]
(5) After ultrasonically cleaning the half-cut laminated structure 5 in acetone and drying, a Pt film, Ni is formed on the entire surface of the laminated structure 5 including the side and bottom surfaces of the half-cut groove 11 by sputtering. The external electrode 7 was formed by depositing the Cr film and the Ni film in this order (FIG. 5).
[0068]
(6) Thereafter, as shown in FIG. 6, the center portion of the laminated structure 5 is half-cut to a depth of 5 μm using a dicing saw to form the half-cut grooves 12, thereby forming two external electrodes 7. Divided into
[0069]
(7) Next, using a dicing saw, a half-cut groove 13 having a depth of 0.12 mm was formed in a direction orthogonal to the half-cut grooves 11 and 12 (FIG. 7).
[0070]
(8) The laminated structure 5 in which the half-cut grooves 12 and 13 are formed is subjected to ultrasonic cleaning in acetone and dried, and then the half-cut surface is supported with a support jig (not shown) using wax. 8), the bottom surface of the film formation substrate 1 was polished until the unit thickness became 0.1 mm, and the half-cut grooves 11 and 13 were penetrated. After the polishing, the support jig was immersed in acetone and the wax was melted and removed to obtain a chip having unnecessary dimensions cut and having dimensions of 0.4 mm × 0.2 mm × 0.1 mm.
[0071]
(9) Then, this chip was subjected to ultrasonic cleaning in acetone and dried to obtain a thin film multilayer chip capacitor having dimensions of 0.4 mm × 0.2 mm × 0.1 mm. FIG. 9 is a diagram showing the thin film multilayer chip capacitor 10 obtained. As shown in FIG. 9, this thin film multilayer chip capacitor 10 is formed by alternately laminating thin film dielectrics 2, 2 a, 2 b and thin film internal electrodes 3 on the film formation substrate 1, the film formation substrate 1. A mode in which the laminate 4, the glass layer (protective layer) 6 disposed on the upper surface side of the laminate 4, and the cut end surface 5 a of the laminate structure 5 wrap around the upper surface side of the glass layer (protective layer) 6. The external electrode 7 is provided.
[0072]
The thin film multilayer chip capacitor 10 thus obtained is soldered onto the wiring board 21 as shown in FIG. 10, the external electrode 7 is connected to the terminal 22 on the wiring board 21 by the solder 20, and the resulting electrostatic The capacitance value was measured. As a result of measuring 20 pieces at 1 kHz and 100 mV, it was confirmed that good characteristics having an average capacitance of 10.8 nF and a dielectric loss tangent of 1.0% were obtained.
[0073]
In the first embodiment, the case where a glass layer is formed as a protective layer has been described as an example. However, it is also possible to use polyimide as a preferable constituent material of the protective layer. In the present invention, a protective layer made of another material can be used.
[0074]
[Embodiment 2]
In the second embodiment, a case where a thin film multilayer capacitor is manufactured as a thin film multilayer electronic component will be described as an example.
[0075]
(1) First, as shown in FIG. 11, thin film dielectrics 2 and thin film electrodes (thin film internal electrodes) 3 are alternately formed on a 0.5 mm thick, 20 mm square film formation substrate (crystallized glass substrate) 1. By laminating, the laminated body 4 in which the thin film internal electrodes 3 facing each other through the thin film dielectric 2 are alternately displaced in a predetermined direction (the direction of the arrow X in FIG. 11) is arranged. Formed (see FIG. 12).
Specifically, as the thin film dielectric 2 (2a), (Ba, Sr) TiO having a thickness of 150 nm is used. ₃ Is formed on the entire surface of the film formation substrate 1 at a film formation substrate temperature of 600 ° C., and then a 130 nm-thick Pt layer (thin film internal electrode) 3 having a predetermined planar shape, and 120 nm-thick (Ba, Sr). TiO ₃ The layer (thin film dielectric) 2 was formed, and this film forming process was repeated to form the thin film dielectric 2 and the thin film internal electrodes 3 (3a, 3b) alternately. Finally, (Ba, Sr) TiO ₃ Layer (thin film dielectric) 2 (2b) was deposited to a thickness of 150 nm.
The thin film dielectrics 2, 2a, 2b were formed on the entire surface of the film formation substrate 1 using the MOCVD method.
The thin film internal electrode 3 was formed by sputtering using a Si shadow mask. As the Si shadow mask, a shadow mask having a predetermined pattern produced by anisotropic etching was used.
[0076]
The thin film internal electrode 3 has a width (W ₁ ) 0.1 mm Pt layer 3 (3a) and width (W ₂ ) 0.12 mm Pt layer 3 (3b) ₀ ) Were alternately formed so as to be 260 μm.
[0077]
In the second embodiment, a glass substrate (thermal expansion coefficient: about 11 ppm / ° C.) having a thermal expansion coefficient larger than that of the thin film dielectric 2 is used as the crystallized glass substrate. (Ba, Sr) TiO used as a thin film dielectric ₃ The coefficient of thermal expansion varies depending on the Ba: Sr ratio, but is usually in the range of about 6-10 ppm / ° C.
[0078]
(2) Further, a 0.05 mm thick, 19.5 mm square substrate (thermal expansion coefficient is about 11 ppm / ° C.) made of the same material as the crystallized glass substrate used in (1) above is used as a protective substrate. A glass paste was applied by spin coating. This glass paste is produced by blending a binder and an organic vehicle with Bi-B-Si-Al glass to make a paste. In addition, as this Bi-B-Si-Al type | system | group glass, the glass transition point was 450 degreeC and the glass softening point was 480 degreeC.
And after apply | coating and drying glass paste, it baked on the conditions shown in Table 2, and formed the glass layer in one surface of a protective substrate.
[0079]
[Table 2]

[0080]
Of the conditions shown in Table 2, the temperature is maintained at 440 ° C. in order to burn and remove the binder.
Further, it was confirmed that the glass was completely melted after the heat treatment under the conditions shown in Table 2 and no bubbles remained in the glass.
[0081]
(3) Next, as shown in FIG. 12, the glass disposed on the upper surface of the laminate 4, that is, the upper surface of the uppermost dielectric 2 (2 b) and one surface (lower surface) of the protective substrate 31. The surface of the protective substrate 31 on which the glass layer 32 is disposed is overlapped so that the layer 32 is in contact, and an alumina substrate (not shown) of 19.5 mm × 19.5 mm × 1 mm is stacked thereon, Furthermore, a 3.8 kg stainless steel weight was set, and pressure bonding was performed under the conditions shown in Table 3. As a result, as shown in FIG. 13, a laminated structure 5 including the film formation substrate 1, the laminate 4, the glass layer 32, and the protective substrate 31 was obtained.
[0082]
[Table 3]

[0083]
(4) Next, as shown in FIGS. 14 and 15, the half-cut groove 11 is formed by half-cutting the portion where the thin film internal electrode 3 is displaced to a depth of 0.21 mm using a dicing saw. did.
[0084]
(5) Then, the half-cut laminated structure 5 is ultrasonically cleaned in acetone and dried, and then a Pt film is formed on the entire surface of the laminated structure 5 including the side and bottom surfaces of the half-cut groove 11 by sputtering. , Ni—Cr film and Ni film were formed in this order to form the external electrode 7 as shown in FIG.
[0085]
(6) Thereafter, as shown in FIGS. 16 and 17, the outer electrode 7 is formed by half-cutting the central portion of the laminated structure 5 to a depth of 5 μm using a dicing saw to form a half-cut groove 12. Was divided into two.
[0086]
(7) And as shown in FIG. 18, the half cut groove | channel 13 of depth 0.22mm was formed in the direction orthogonal to the half cut groove | channel 11 using the dicing saw.
[0087]
(8) Then, the half-cut laminated structure 5 is again ultrasonically cleaned in acetone and dried, and then the half-cut surface is affixed to a support jig (not shown) using wax. As shown in FIG. 19, the bottom surface of the film formation substrate 1 was polished until the unit thickness became 0.2 mm, and the half-cut grooves 11 and 13 were penetrated. After polishing, the support jig was immersed in acetone and the wax was melted and removed to obtain a chip having unnecessary dimensions cut and having dimensions of 0.4 mm × 0.2 mm × 0.2 mm.
[0088]
(9) Then, this chip was ultrasonically washed in acetone and dried to obtain a thin film multilayer chip capacitor having dimensions of 0.4 mm × 0.2 mm × 0.2 mm. FIG. 20 is a view showing the obtained thin film multilayer chip capacitor. As shown in FIG. 20, this thin film multilayer chip capacitor 10a is formed by alternately laminating thin film dielectrics 2, 2a, 2b and thin film internal electrodes 3 on the film formation substrate 1, the film formation substrate 1. Cut end surface 5a of laminated body 5 including laminated body 4, protective substrate 31 bonded to the upper surface side of laminated body 4 via glass layer 32, film forming substrate 1, laminated body 4, and protective substrate 31. The external electrode 7 is disposed in such a manner as to wrap around the upper surface side of the protective substrate 31.
[0089]
The thin film multilayer chip capacitor 10a thus obtained is soldered onto the wiring board 21 as shown in FIG. 21, and the external electrode 7 is connected to the terminal 22 on the wiring board 21 with the solder 20 to obtain the static The capacitance value was measured. As a result of measuring 20 pieces at 1 kHz and 100 mV, it was confirmed that good characteristics with a capacitance of 11.5 nF and a dielectric loss tangent of 1.4% were obtained as average values.
[0090]
In the second embodiment, since the protective substrate having a thermal expansion coefficient larger than that of the thin film dielectric is used, it is possible to suppress the occurrence of tensile stress in the thin film dielectric and to improve reliability. Chip processing can be performed without loss, and reliability can be improved by suppressing short circuits and leakage current.
[0091]
In the first and second embodiments, the thin film multilayer chip capacitor has been described as an example. However, the present invention can be applied to other thin film multilayer electronic components.
[0092]
In the first and second embodiments, the external electrode is divided by forming the half cut groove. However, the external electrode is divided and formed at two or more predetermined positions using a mask. It is also possible.
[0093]
The invention of the present application is not limited to the above embodiment in other respects as well, and the materials, specific shapes, forming methods, thin film dielectrics and thin film internal electrodes constituting the substrate, the thin film dielectric and the thin film internal electrodes Various applications and modifications can be made within the scope of the invention with respect to the number of stacked layers, external electrodes, protective layers, materials and forming methods for forming the protective substrate, and specific displacement amounts of each thin film internal electrode. It is.
[0094]
【The invention's effect】
As described above, in the method for manufacturing a thin film multilayer electronic component according to the present invention (Claim 1), the thin film internal electrode is displaced in a state where the protective layer is formed on the upper surface of the multilayer body formed on the film formation substrate. A half cut groove that cuts the laminated body in the entire thickness direction by cutting the portion from the protective layer side in a direction substantially perpendicular to the positional deviation direction, and cuts the film formation substrate to the middle in the thickness direction. After forming the external electrode at a predetermined position on the surface of the multilayer structure, the position corresponding to at least the half cut groove of the film formation substrate is defined as a half cut groove from the surface opposite to the protective layer side. Since the half-cut groove is penetrated by removing until reaching the upper limit, the external electrode can be efficiently formed at a stage before the laminated structure is divided into individual elements for each film formation substrate. Yo To become. That is, according to the method for manufacturing a thin-film laminated electronic component of the present invention (Claim 1), after dividing into individual elements, without the difficulty of handling as in the case of forming an external electrode, efficiently, In addition, economically, a thin and high performance thin film laminated electronic component can be manufactured.
In addition, since the position corresponding to at least the half cut groove of the film formation substrate is removed from the surface opposite to the protective layer side until reaching the half cut groove, the half cut groove is penetrated. The external electrode formed on the half-cut end face of the multilayer structure is not removed, and it is possible to efficiently manufacture a thin film multilayer electronic component with high connection reliability between the external electrode and the thin film internal electrode. .
Further, since the protective layer is formed on the upper surface of the laminate, it is possible to provide a highly reliable thin film laminated electronic component having excellent moisture resistance and impact resistance.
[0095]
Further, as in the method for manufacturing a thin film multilayer electronic component according to claim 2, the external electrode is divided into two or more by removing a part of the portion of the external electrode formed on the upper surface of the protective layer. In this case, it is possible to form the external electrode with higher positional accuracy than in the case where the external electrode is formed at a predetermined position using a mask, and the cost can be reduced.
[0096]
Further, as in the method of manufacturing a thin film multilayer electronic component according to claim 3, when penetrating the half cut groove, the entire surface of the film formation substrate is polished from the surface opposite to the protective layer side to penetrate the half cut groove. By doing so, it becomes possible to reduce the thickness of the film formation substrate and to reduce the height of the entire thin film multilayer electronic component, and to achieve a further reduction in height.
[0097]
In addition, as in the method for manufacturing a thin film laminated electronic component according to claim 4, by using glass or polyimide as a constituent material of the protective layer, a thick protective layer is formed to obtain a sufficient mechanical reinforcement effect. be able to.
[0098]
Further, as in the method of manufacturing a thin film multilayer electronic component according to claim 5, by forming the external electrode after increasing the surface roughness of the protective layer, the adhesion strength between the external electrode and the protective layer is increased, It becomes possible to prevent peeling of the external electrode at the time of cutting.
[0099]
Moreover, in the manufacturing method of the thin film laminated electronic component of the present invention (Claim 6), by cutting from the protective substrate side in a state where the protective substrate is bonded to the upper surface of the laminate formed on the film formation substrate, The laminated body is cut in the entire thickness direction, a half cut groove is formed so as to cut the film formation substrate to the middle in the thickness direction, and an external electrode is formed at a predetermined position on the surface of the laminated structure, and then the protective substrate Since the groove that reaches the half-cut groove is formed from the surface opposite to the side, the external electrode is efficiently used at the stage before dividing the laminated structure into individual elements for each film formation substrate. Can be formed. That is, according to the method for manufacturing a thin-film laminated electronic component of the present invention (Claim 6), it is efficiently divided without difficulty in handling as in the case of forming an external electrode after being divided into individual elements, In addition, economically, a thin and high performance thin film laminated electronic component can be manufactured.
In addition, since the position corresponding to at least the half cut groove of the film formation substrate is removed from the surface opposite to the protective substrate side until reaching the half cut groove, the half cut groove is penetrated. The external electrode formed on the half-cut end face of the multilayer structure is not removed, and it is possible to efficiently manufacture a thin film multilayer electronic component with high connection reliability between the external electrode and the thin film internal electrode. .
Further, since the protective substrate is disposed on the upper surface of the laminate, it is possible to provide a highly reliable thin film laminated electronic component having excellent moisture resistance and impact resistance.
Note that various insulating materials having heat resistance can be used as the protective substrate.
Moreover, when bonding a protective substrate to the upper surface of a laminated body, it is possible to bond a protective substrate to the upper surface of a laminated body through various bonding agents.
[0100]
When the external electrode is divided into two or more by removing a part of the portion of the external electrode formed on the upper surface of the protective substrate, as in the method for manufacturing a thin film laminated electronic component according to claim 7 Compared to the case where the external electrode is formed at a predetermined position using a mask, the external electrode can be formed with high positional accuracy, and the cost can be reduced.
[0101]
Further, as in the method of manufacturing a thin film laminated electronic component according to claim 8, when the half cut groove is penetrated, the entire surface of the film formation substrate is polished from the surface opposite to the protective substrate side to penetrate the half cut groove. By doing so, it becomes possible to reduce the thickness of the film formation substrate and to reduce the height of the entire thin-film multilayer electronic component, thereby further reducing the height.
[0102]
Further, as in the method of manufacturing a thin film multilayer electronic component according to claim 9, a glass formed by baking a glass paste using a protective substrate having a glass paste baked on at least one main surface thereof as a protective substrate. By bonding the protective substrate to the stacked body through the layers, it is possible to easily and surely form a stacked structure in which the protective substrate is bonded to the upper surface of the stacked body.
[0103]
In addition, as in the method for manufacturing a thin film multilayer electronic component according to claim 10, when a protective substrate having a thermal expansion coefficient larger than that of the thin film dielectric is used, tensile stress is generated in the thin film dielectric. This makes it possible to perform chip processing without impairing reliability. In other words, when the protective substrate is pressure-bonded to the laminated structure, if it is pressure-bonded at a high temperature, the protective substrate shrinks more than the thin-film dielectric during the process of cooling to room temperature, and is compressed into the thin-film dielectric. By applying the stress, it is possible to suppress a short circuit and a leakage current, and it is possible to improve reliability.
[0104]
Moreover, as a method for bonding the protective substrate, an adhesive may be used. However, as in the method for manufacturing a thin film laminated electronic component according to claim 11, for example, the protective substrate is formed into a laminated body through a glass layer. In the case of bonding, the protective substrate can be bonded easily and reliably by the thermocompression bonding method.
[0105]
Further, as in the method for manufacturing a thin film laminated electronic component according to claim 12, by performing thermocompression bonding at a temperature lower than the baking temperature of the glass paste, it is possible to prevent the glass paste from melting and flowing out during the compression bonding. It becomes possible.
[0106]
Further, as in the method of manufacturing a thin film multilayer electronic component according to claim 13, the short circuit failure due to the deterioration of the thin film dielectric is achieved by thermocompression bonding the laminate and the protective substrate at a temperature lower than the film formation temperature of the thin film dielectric. It is possible to improve the reliability by suppressing or preventing the occurrence of the above.
[0107]
According to a method of manufacturing a thin film multilayer electronic component of the present invention, the thin film dielectric electronic device and the thin film internal electrode are alternately stacked on the film formation substrate, When applied to a method for manufacturing a thin film multilayer capacitor having a structure in which an external electrode conducting to a thin film internal electrode is disposed, an ultra-small, large-capacity, highly reliable thin film multilayer capacitor is efficiently and economical. Can be manufactured.
[0108]
In the thin film laminated electronic component of the present invention (Claim 15), the protective layer is disposed on the upper surface side of the laminated body, and the external electrode is connected to the cut end face of the laminated structure (inside the thin film of the laminated body). The electrode has a structure that is arranged in such a manner as to wrap around to the upper surface side of the protective layer, and can be efficiently manufactured by the method of claim 1 of the present application. Therefore, it is possible to provide a small-sized and high-performance thin film laminated electronic component at a low cost.
[0109]
Further, as in the thin film laminated electronic component of claim 16, by using glass or polyimide for the protective layer, it is possible to provide a highly reliable thin film laminated electronic component having a thick protective layer. .
[0110]
In addition, since the thin film laminated electronic component according to claim 17 is subjected to a treatment for increasing the surface roughness of the protective layer, the adhesion strength of the external electrode formed on the protective layer to the protective layer is increased, and the half cut It is possible to prevent peeling of the external electrode at the time.
[0111]
In the thin film laminated electronic component of the present invention (Claim 18), the protective substrate is bonded to the upper surface side of the laminated body, and the external electrode is a cut end face of the laminated structure (thin film internal electrode of the laminated body). From the surface of the protective substrate, and can be efficiently manufactured by the method of claim 6 of the present application. Therefore, it is possible to provide a small-sized and high-performance thin film laminated electronic component at a low cost.
[0112]
In the thin film laminated electronic component of claim 19, the protective substrate is bonded to the laminated body via the glass layer, and the protective substrate exhibits a high protection function, so that the reliability can be improved.
[0113]
Further, as in the thin film multilayer electronic component of claim 20, by using a protective substrate having a thermal expansion coefficient larger than that of the thin film dielectric, it is possible to suppress the occurrence of tensile stress in the thin film dielectric. Thus, reliability can be improved.
In other words, when the protective substrate is pressure-bonded to the laminated structure, if it is pressure-bonded at a high temperature, the protective substrate shrinks more than the thin-film dielectric during the process of cooling to room temperature, and is compressed into the thin-film dielectric. By applying the stress, it is possible to suppress a short circuit and a leakage current, and it is possible to improve reliability.
[0114]
Further, according to a twenty-first aspect of the present invention, the present invention has a structure in which thin film dielectrics and thin film internal electrodes are alternately laminated on a film formation substrate, and an external electrode that is electrically connected to a predetermined thin film internal electrode is disposed. By applying the present invention to a thin film multilayer capacitor, it is possible to provide a thin film multilayer capacitor that is ultra-compact, has a large capacity, is highly reliable, and is excellent in economy.
[Brief description of the drawings]
FIG. 1 is a perspective plan view showing a laminated body formed by laminating a thin film dielectric and a thin film internal electrode on a substrate in an embodiment (Embodiment 1) of the present invention.
FIG. 2 is a front cross-sectional view showing a main part of a laminate formed in Embodiment 1 of the present invention.
FIG. 3 is a perspective plan view showing a state in which half-cut grooves are formed in a laminated structure in which a laminated body is formed on a substrate in Embodiment 1 of the present invention.
4 is a front cross-sectional view showing a state in which half cut grooves are formed in a laminated structure in which a laminated body is formed on a substrate in Embodiment 1 of the present invention. FIG.
FIG. 5 is a front cross-sectional view showing a state in which external electrodes are formed on a laminated structure in which half cut grooves are formed in Embodiment 1 of the present invention.
FIG. 6 is a front cross-sectional view showing a state in which a half cut groove is formed on the upper surface of a laminated structure and an external electrode is divided into two in Embodiment 1 of the present invention.
7 is a plan view showing a state in which half-cut grooves in different directions are formed in the first embodiment of the present invention. FIG.
FIG. 8 is a diagram illustrating a process of obtaining a thin film multilayer electronic component (thin film multilayer capacitor) by polishing the bottom surface of the film formation substrate in the first embodiment of the present invention.
FIG. 9 is a cross-sectional view showing a thin film multilayer electronic component (thin film multilayer capacitor) obtained in Embodiment 1 of the present invention.
FIG. 10 is a diagram showing an example of a mounting method of the thin film multilayer electronic component (thin film multilayer capacitor) obtained in Embodiment 1 of the present invention.
FIG. 11 is a perspective plan view showing a laminate formed by laminating a thin film dielectric and a thin film internal electrode on a substrate in an embodiment (Embodiment 2) of the present invention.
FIG. 12 is a front cross-sectional view showing the main part of the laminate formed in Embodiment 2 of the present invention.
FIG. 13 is a front cross-sectional view showing a main part of a laminated structure formed in Embodiment 2 of the present invention.
FIG. 14 is a perspective plan view showing a state in which a half cut groove is formed in a laminated structure in which a laminated body is formed on a substrate in Embodiment 2 of the present invention.
FIG. 15 is a front sectional view showing a state in which a half cut groove is formed in a laminated structure in which a laminated body is formed on a substrate in Embodiment 2 of the present invention.
FIG. 16 is a front cross-sectional view showing a state in which external electrodes are formed on a laminated structure in which half-cut grooves are formed in Embodiment 2 of the present invention.
FIG. 17 is a front cross-sectional view showing a state in which a half cut groove is formed on the upper surface of a laminated structure and an external electrode is divided into two in Embodiment 2 of the present invention.
FIG. 18 is a perspective plan view showing a state in which half-cut grooves in different directions are formed in the second embodiment of the present invention.
FIG. 19 is a diagram showing a step of obtaining a thin film multilayer electronic component (thin film multilayer capacitor) by polishing the bottom surface of the film formation substrate in Embodiment 2 of the present invention.
FIG. 20 is a cross-sectional view showing a thin film multilayer electronic component (thin film multilayer capacitor) obtained in Embodiment 2 of the present invention.
FIG. 21 is a diagram showing an example of a method for mounting a thin film multilayer electronic component (thin film multilayer capacitor) obtained in Embodiment 2 of the present invention;
[Explanation of symbols]
1 Deposition substrate
2 (2a, 2b) Thin film dielectric
3 (3a, 3b) Thin film electrode (thin film internal electrode)
4 Laminate
5 Laminated structure
5a Cut end face of laminated structure
6 Glass layer (protective layer)
7 External electrode
10, 10a Thin film multilayer chip capacitor
11, 12, 13 Half cut groove
20 Solder
21 Wiring board
22 terminals
31 Protection board
32 glass layers
L ₀ Overlap length
W ₁ , W ₂ Thin film electrode width
X One predetermined direction

Claims (21)

Thin film multilayer electronic component comprising: a film formation substrate; a laminate formed by alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate; and an external electrode electrically connected to a predetermined thin film internal electrode In the manufacturing method of
(A) By alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate, the thin film internal electrodes facing each other through the thin film dielectric are alternately displaced in a predetermined direction. Forming a laminated body provided; and
(B) providing a protective layer on the top surface of the laminate;
(C) In the laminated structure provided with the film formation substrate, the laminated body, and the protective layer, the protective layer is arranged in a direction substantially perpendicular to the misalignment direction at a position where the thin film internal electrode constituting the laminated body is misaligned. By cutting from the side, the laminate is cut in the entire thickness direction, and the step of forming a half cut groove for cutting the film formation substrate to the middle in the thickness direction,
(D) forming an external electrode at a predetermined position on the surface of the laminated structure;
(E) The half-cut groove is penetrated by removing at least a position corresponding to the half-cut groove of the film formation substrate from the surface opposite to the protective layer side until reaching the half-cut groove. A method of manufacturing a thin-film laminated electronic component. In forming the external electrode, after forming the external electrode on the upper surface of the protective layer and the half-cut end surface of the laminated structure, a part of the portion formed on the upper surface of the protective layer is removed. 2. The method of manufacturing a thin film laminated electronic component according to claim 1, wherein the external electrode is divided into two or more. 2. The step of penetrating the half-cut groove, wherein the half-cut groove is penetrated by polishing the entire surface of the deposition substrate from a surface opposite to the protective layer side. 3. A method for producing a thin film laminated electronic component according to 2. The method for manufacturing a thin-film laminated electronic component according to claim 1, wherein the protective layer is made of glass or polyimide. The method for manufacturing a thin film multilayer electronic component according to claim 1, further comprising a step of increasing the surface roughness of the protective layer before the step of forming the external electrode. Thin film multilayer electronic component comprising: a film formation substrate; a laminate formed by alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate; and an external electrode electrically connected to a predetermined thin film internal electrode In the manufacturing method of
(A) By alternately laminating thin film current collectors and thin film internal electrodes on the film formation substrate, the respective thin film internal electrodes facing each other via the thin film dielectric are alternately displaced in a predetermined direction. Forming a disposed laminate; and
(B) bonding a protective substrate to the upper surface of the laminate;
(C) In the laminated structure including the film formation substrate, the laminate, and the protective substrate, the protective substrate in a direction substantially perpendicular to the misalignment direction in the misaligned portion of the thin film internal electrode constituting the laminate. By cutting from the side, the laminate is cut in the entire thickness direction, and the step of forming a half cut groove for cutting the film formation substrate to the middle in the thickness direction,
(D) forming an external electrode at a predetermined position on the surface of the laminated structure;
(E) The half-cut groove is penetrated by removing at least a position corresponding to the half-cut groove of the film-forming substrate from the surface opposite to the protective substrate side until reaching the half-cut groove. A method of manufacturing a thin-film laminated electronic component. In forming the external electrode, after forming the external electrode on the upper surface of the protective substrate and the half-cut end surface of the laminated structure, a part of the portion formed on the upper surface of the protective substrate is removed. 7. The method of manufacturing a thin film laminated electronic component according to claim 6, wherein the external electrode divided into two or more is formed. The step of penetrating the half-cut groove allows the half-cut groove to penetrate by polishing the entire surface of the film formation substrate from a surface opposite to the protective substrate side. 8. A method for producing a thin film laminated electronic component according to item 7. In the step of bonding the protective substrate to the upper surface of the laminate, a protective substrate having a glass paste burned on at least one main surface thereof is used as the protective substrate, and a glass layer formed by baking the glass paste is used. The method for manufacturing a thin-film laminated electronic component according to claim 6, wherein the protective substrate is joined to the laminated body. The method for manufacturing a thin film multilayer electronic component according to claim 6, wherein the protective substrate has a thermal expansion coefficient larger than that of the thin film dielectric. The laminated thin film electronic component according to any one of claims 6 to 10, wherein in the step of bonding a protective substrate to the upper surface of the laminated body, the laminated body and the protective substrate are bonded by thermocompression bonding. Production method. In the step of bonding a protective substrate to the upper surface of the laminate, the laminate and the protective substrate are bonded by thermocompression bonding at a temperature lower than the baking temperature of the glass paste. Item 12. A method for producing a laminated thin film electronic component according to Item 11. In the step of bonding a protective substrate to the upper surface of the stacked body, the stacked body and the protective substrate are bonded by thermocompression bonding at a temperature lower than a film forming temperature of the thin film dielectric. The method for producing a laminated thin film electronic component according to claim 11 or 12. It is used when manufacturing a thin film multilayer capacitor having a structure in which thin film dielectrics and thin film internal electrodes are alternately laminated on a film formation substrate, and an external electrode that is electrically connected to a predetermined thin film internal electrode is disposed. The method for producing a thin-film laminated electronic component according to claim 1, wherein the method is provided. Thin film multilayer electronic component comprising: a film formation substrate; a laminate formed by alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate; and an external electrode electrically connected to a predetermined thin film internal electrode Because
A protective layer is disposed on the upper surface side of the laminate, and
A thin film characterized in that an external electrode is disposed in such a manner as to wrap around from the cut end surface of the laminated structure including the film formation substrate, the laminated body, and the protective layer to the upper surface side of the protective layer. Laminated electronic components. The thin film laminated electronic component according to claim 15, wherein the protective layer is made of glass or polyimide. The thin film laminated electronic component according to claim 15 or 16, wherein the protective layer is subjected to a treatment for increasing a surface roughness. Thin film multilayer electronic component comprising: a film formation substrate; a laminate formed by alternately laminating thin film dielectrics and thin film internal electrodes on the film formation substrate; and an external electrode electrically connected to a predetermined thin film internal electrode Because
A protective substrate is bonded to the upper surface side of the laminate, and
A thin film characterized in that an external electrode is arranged in such a manner as to wrap around from the cut end surface of the laminated structure including the film formation substrate, the laminate, and the protective substrate to the upper surface side of the protective substrate. Laminated electronic components. 19. The thin film laminated electronic component according to claim 18, wherein the laminated body and the protective substrate are bonded via a glass layer baked with a glass paste. 20. The thin film multilayer electronic component according to claim 18, wherein the protective substrate has a thermal expansion coefficient larger than that of the thin film dielectric. 2. A thin film multilayer capacitor having a structure in which thin film dielectrics and thin film internal electrodes are alternately stacked on a film formation substrate, and an external electrode that is electrically connected to a predetermined thin film internal electrode is disposed. The thin film laminated electronic component according to any one of 15 to 20.

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