JP2004288784A - Nanoprinting apparatus and fine structure transfer method - Google Patents

Abstract

An object of the present invention is to improve the throughput by shortening the cycle of heating and cooling in a nanoprinting method, which is a pattern transfer technique for forming a structure having a fine shape. In order to form a fine structure on a substrate, in a nanoprinting apparatus that heats and presses a stamper having fine irregularities formed on the surface, the substrate pressing surface of the stamper is determined based on the cross-sectional area of the stamper substrate pressing surface. A nano-printing device having a heat insulating structure in which a cross-sectional area of a portion for holding a microstructure is reduced, and a microstructure transfer method using the nano-printing device.
[Selection] Fig. 2

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a nanoprint transfer method for forming a fine structure on a substrate using a stamper having a heating / pressing mechanism.
[0002]
[Prior art]
2. Description of the Related Art In recent years, miniaturization and integration of semiconductor integrated circuits have been advanced, and photolithography apparatuses have been improved in precision as a pattern transfer technique for realizing the microfabrication. However, the processing method is approaching the wavelength of the light source for light exposure, and the lithography technique is approaching its limit. For this reason, an electron beam lithography apparatus, which is a kind of charged particle beam apparatus, has come to be used in place of the lithography technique in order to achieve further miniaturization and higher precision.
[0003]
The pattern formation using an electron beam is different from the collective exposure method in pattern formation using a light source such as an i-line or an excimer laser, and is based on a method of drawing a mask pattern. It is a drawback that exposure (drawing) takes time and pattern formation takes time. Therefore, as the degree of integration is dramatically increased to 256 mega, 1 giga, and 4 giga, the pattern formation time is drastically increased correspondingly, and there is a concern that the throughput may be significantly inferior. Therefore, in order to increase the speed of the electron beam lithography system, the development of a collective pattern irradiation method that combines masks of various shapes and irradiates them collectively with an electron beam to form an electron beam of a complicated shape is being advanced. . As a result, while the pattern miniaturization is advanced, the electron beam lithography system must be increased in size, and a mechanism for controlling the mask position with higher accuracy is required. was there.
[0004]
On the other hand, techniques for forming a fine pattern at low cost are disclosed in Patent Literatures 1 and 2, Non-Patent Literature 1, and the like. This is to transfer a predetermined pattern by stamping a stamper having the same pattern irregularities as a pattern to be formed on a substrate onto a resist film layer formed on the surface of a substrate to be transferred. According to the nanoimprint technique described in Document 2 and Non-Patent Document 1, it is stated that a microstructure of 25 nm or less can be formed by transfer using a silicon wafer as a stamper.
[0005]
Patent Document 3 below discloses that an upper heat insulating plate is provided on a fixed platen or a movable platen located at an upper portion for the purpose of maintaining high pressure equalization during hot press molding and manufacturing a high-quality circuit board. A hot press device that heats and presses a laminated structure using an upper hot plate provided via a lower hot plate that is provided in contact with a movable plate or a fixed plate located below via a lower heat insulating plate is disclosed. ing.
[0006]
[Patent Document 1]
US Patent No. 5,259,926 [Patent Document 2]
US Patent No. 5,772,905 [Patent Document 3]
Japanese Patent Application Laid-Open No. 2002-361500 [Non-Patent Document 1]
S. Y. Chou et al. , Appl. Phys. Lett. , Vol. 67, p. 3314 (1995)
[0007]
[Problems to be solved by the invention]
However, in the imprint technique capable of forming a fine pattern, time is required for a temperature increase and a cooling cycle during heating and pressurization, and the transfer throughput is not sufficient.
[0008]
Patent Document 3 discloses a press device in which a heat insulating material is arranged between a hot platen and a fixed platen or between a hot platen and a movable platen. However, simply arranging the heat insulating material is not sufficient in the heat insulating property, and it is necessary to further improve the heat insulating property, shorten the cycle of heating and cooling, and improve the throughput.
[0009]
In view of the above technical problems, an object of the present invention is to improve the throughput by shortening the cycle of heating and cooling in the nanoprinting method, which is a pattern transfer technique for forming a structure having a fine shape. And
[0010]
[Means for Solving the Problems]
The present inventors have thought of a technique for shortening the cycle of heating and cooling and improving the throughput in the nanoprinting method, which is a pattern transfer technique for forming a structure having a fine shape, and have reached the present invention. .
[0011]
That is, first, the present invention is an invention of a nanoprinting apparatus, in which a substrate and a stamper having fine irregularities formed on the surface are heated and pressed to form a fine structure on the substrate. The apparatus is characterized in that it has a heat insulating structure in which a cross-sectional area of a portion of the stamper that holds the substrate pressing surface is smaller than a cross-sectional area of the substrate pressing surface of the stamper. As in the present invention, by reducing the cross-sectional area of the portion holding the substrate pressing surface of the stamper from the cross-sectional area of the substrate pressing surface of the stamper, heat insulation is improved, and the cycle time of temperature rise / cooling is reduced. Thus, the transfer throughput is improved.
[0012]
Here, as a method of reducing the cross-sectional area of a portion of the stamper that holds the substrate pressing surface, the cross-sectional area of the portion that holds the substrate pressing surface of the stamper is preferably a column structure that holds the substrate pressing surface of the stamper. .
[0013]
Secondly, the present invention is an invention of a pattern transfer method. In order to form a fine structure on a substrate using a nanoprinting apparatus, the substrate and a stamper having fine irregularities formed on the surface are heated and heated. In the pattern transfer method of pressing, the transfer is performed by an adiabatic structure in which a cross-sectional area of a portion holding the substrate pressing surface of the stamper is smaller than a cross-sectional area of the substrate pressing surface of the stamper.
[0014]
Similarly to the first aspect of the present invention, as a method of making the cross-sectional area of the portion holding the substrate pressing surface of the stamper smaller than the cross-sectional area of the substrate pressing surface of the stamper, the portion holding the substrate pressing surface of the stamper is a column. It is preferably a structure.
Here, as a method of molding the resin substrate or the resin film on the substrate, it is preferable to heat and deform the resin substrate or the resin film on the substrate.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
First, the nanoprinting method will be described with reference to FIG. A stamper having a fine pattern on the surface of a silicon substrate or the like is manufactured. A resin film is provided on another substrate (FIG. (A)). A pressing device having a heating / pressing mechanism (not shown) is used at a temperature equal to or higher than the glass transition temperature (Tg) of the resin and a predetermined pressure is applied. Press the stamper on the resin film (FIG. (B)). It is cooled and hardened (Fig. (C)). The stamper and the substrate are separated, and the fine pattern of the stamper is transferred to the resin film on the substrate (FIG. (D)).
[0016]
According to the nanoprinting method, (1) the integrated ultra-fine pattern can be efficiently transferred, (2) the apparatus cost is easy, (3) it is possible to cope with complicated shapes and pillars can be formed, and the like. There are features.
[0017]
The application fields of the nanoprint method include (1) various biodevices such as DNA chips and immunoassay chips, especially disposable DNA chips, (2) semiconductor multilayer wiring, (3) printed circuit boards and RF MEMS, (4). Optical or magnetic storage, (5) optical devices such as waveguides, diffraction gratings, microlenses, polarizing elements, photonic crystals, (6) sheets, (7) LCD displays, (8) FED displays, etc. The present invention is preferably applied to these fields.
[0018]
In the present invention, nanoprinting refers to transfer in the range from several hundreds of μm to several nm.
In the present invention, it is preferable that the press device has a heating / pressing mechanism in order to efficiently transfer the pattern.
[0019]
In the present invention, the stamper has a fine pattern to be transferred, and a method of forming the pattern on the stamper is not particularly limited. For example, it is selected according to a desired processing accuracy such as photolithography or electron beam lithography. As the material of the stamper, any material having strength and required workability such as silicon wafer, various metal materials, glass, ceramic, plastic, etc. may be used. Specifically, Si, SiC, SiN, polycrystalline Si, glass, Ni, Cr, Cu, and those containing at least one of them are preferably exemplified.
[0020]
In the present invention, the material used as the substrate is not particularly limited, but may be any material having a predetermined strength. Specifically, silicon, various metal materials, glass, ceramic, plastic, and the like are preferably exemplified.
[0021]
In the present invention, the resin film to which the fine structure is transferred is not particularly limited, but is selected according to a desired processing accuracy. Specifically, polyethylene, polypropylene, polyvinyl alcohol, polyvinylidene chloride, polyethylene terephthalate, polyvinyl chloride, polystyrene, ABS resin, AS resin, acrylic resin, polyamide, polyacetal, polybutylene terephthalate, glass reinforced polyethylene terephthalate, polycarbonate, modified Thermoplastic resins such as polyphenylene ether, polyphenylene sulfide, polyether ether ketone, liquid crystal polymer, fluororesin, polyalate, polysulfone, polyethersulfone, polyamideimide, polyetherimide, thermoplastic polyimide, phenolic resin, melamine resin, urea Resin, epoxy resin, unsaturated polyester resin, alkyd resin, silicone resin, diallyl phthalate resin, poly Bromide bismaleimide, poly bisamide thermosetting resin triazole and the like, and it is possible to use two or more kinds of these blended material.
[0022]
【Example】
Hereinafter, examples of the present invention and comparative examples will be described.
[Example 1]
A nanoprinting apparatus having a heat insulating structure on a stage and a method for transferring a fine structure, which are one embodiment of the present invention, will be described with reference to FIG. FIG. 2 is a conceptual diagram, and it is rejected that the pattern shape is simplified and written in a relatively large size. First, an outline of the apparatus will be described.
[0023]
First, reference numeral 1 in FIG. 2 denotes a frame of the apparatus main body. Reference numeral 2 denotes a head leveling mechanism, which has a function of adjusting the head so as to always contact the stage in parallel. Reference numeral 3 denotes a head, which is circular and has a pressure area of 6 inchφ, and is fixed to the frame via the head leveling mechanism 2.
[0024]
Reference numeral 4 denotes a stage on which a sample is mounted, which is a circle having a diameter of 6 inchφ and has a thickness of about 20 mm. The stage 4 can be heated and cooled, and can freely control the temperature from room temperature to 300 ° C. Also, a vacuum chuck for fixing the sample is formed on the surface. By mounting the stamper 7 and the sample 8 each having a fine structure formed thereon, heating and pressing can be performed. The stage 4 is connected to a stage pressing mechanism 6 via a plurality of SUS columns 4-1 (5 mmφ × 30 mm) via a support 5 of the main body pressing section.
[0025]
FIG. 3 is a cross-sectional view of the portion AA ′. As described above, the heat capacity of the stage 4 is reduced by reducing the cross-sectional area of the portion (the support 4-1) that holds the substrate pressing surface more than the substrate pressing surface (the stage 4). It can be carried out. A wire for heat control, a pipe for cooling, and the like run inside a part of the column.
[0026]
The stage pressurizing mechanism 6 generates a maximum thrust of 7000 kgf by air pressure. This thrust can control the pressure and pressurization time by an external controller. Further, the stage 4, the support 4-1 and the head 3 of the present apparatus are housed in a vacuum chamber 9. The vacuum chamber 9 is made of SUS and is composed of two parts, and can be opened and closed by a vacuum chamber opening / closing mechanism 10 when taking in and out the sample. Further, the vacuum chamber is connected to a vacuum pump, and the pressure in the chamber can be reduced to 0.1 torr or less.
[0027]
Next, a method for transferring a fine structure using the above-described apparatus will be specifically described. First, a varnish prepared by dissolving 10% of polystyrene (made by A & M polystyrene) in ethylene glycol monoethyl ether acetate was prepared as a sample to be transferred, and then spin-coated on a 0.5-inch 5-inch Si substrate. Sample 7 on which a 500 nm thick polystyrene layer was formed by pre-baking at 90 ° C. for 5 minutes. Next, a Teflon sheet cushioning material 13 having a thickness of 50 μm and a diameter of 5.5 inchφ was placed on the stage 4, and a sample 7 was set thereon.
[0028]
Next, a sample 8 in which a pattern forming area created by Ni electroforming was 4 inchφ, an outer diameter of 8 inchφ, and a Ni stamper 7 having fine irregularities on the order of nm formed on a surface of 100 μm thickness was placed on a buffer material 13. Set on top. In this case, after setting the sample, the stamper is set on the sample. However, the stamper and the sample may be aligned in another place in advance and then mounted on the cushioning material. In some cases, the stamper is fixed to the head of the apparatus in advance, and only the sample is set on the cushioning material.
[0029]
Next, the vacuum chamber 9 was closed, and the pressure inside the chamber was evacuated to 0.1 torr or less using a rotary pump. Next, the sample was heated to 200 ° C., and after pressing at 10 MPa, held for 10 minutes. Next, after the stage 4 was cooled and forcibly cooled to 100 ° C., the chamber was opened to the atmosphere. Next, the sample 8 was fixed to the stage 4 with a vacuum chuck, the stamper 7 was fixed to the head 3, and the stamper 7 and the sample 8 were separated by lowering the stage at a speed of 0.1 mm / s.
[0030]
The stamper pattern was transferred to the sample surface by the above process. Observation of the transferred pattern by SEM confirmed that the shape of the stamper was transferred. FIG. 6 shows the results of evaluating the relationship between the stage temperature and time.
[0031]
As shown in FIG. 6, the time from the temperature rise to 100 ° C. or less is 15 minutes including the holding time, the overshoot at the time of temperature rise is 5 ° C. or less, and the portion holding the substrate pressing surface has a columnar structure. This clearly shows that the heat insulating property of the stage has been improved and the temperature can be raised and lowered quickly. Further, by forming the portion holding the substrate pressing surface in a columnar structure, the heat capacity is small, so that the thermal inertia is reduced, and the overshoot that becomes higher than the set temperature during the temperature rise is suppressed.
[0032]
[Example 2]
Pattern transfer was performed using an apparatus in which the head portion of the apparatus of Example 1 was modified as shown in FIG. The specific contents of the head section are shown below.
[0033]
The head 3 is 6 inches in diameter and 20 mm in thickness. The head 3 can be heated and cooled, and the temperature can be freely controlled from room temperature to 300 ° C. The head 3 is fixed to the head support 3-2 by a plurality of SUS columns 3-1 (5 mmφ × 30 mm). The head support 3-2 is connected to a head leveling mechanism. As described above, the heat capacity of the stage and the head 3 is reduced by reducing the cross-sectional area of the portion (the columns 3-1 and 4-1) holding the substrate pressing surface more than the substrate pressing surface (the stage 4 and the head 3). In addition, the temperature of the head 3 can be rapidly increased and decreased. In addition, wiring for heat control, piping for cooling, and the like run in a part of the column 3-2.
[0034]
Using this apparatus, a transfer experiment was performed in the same steps as in Example 1. Observation of the transferred pattern by SEM confirmed that the shape of the stamper was transferred. When the relationship between the stage temperature and the time was evaluated, the time from the rise in temperature to the return to 100 ° C. or less was 13 minutes including the holding time, and the overshoot at the time of temperature rise was 5 ° C. or less. By making the portion holding both the substrate pressing surfaces into a columnar structure, the heat insulating properties of both the substrate pressing surfaces are improved, and the temperature can be raised and lowered quickly. Furthermore, since the heat capacity is small, the inertia of the heat is small, and the overshoot that becomes higher than the set temperature during the temperature rise is suppressed to a small value.
[0035]
[Comparative example]
A transfer experiment was performed using a nanoprinting apparatus in which the stage 4 as shown in FIG. 5 was directly connected to the support 5. The stage size and the heating and cooling mechanism of this device were the same as those of the device of Example 1.
[0036]
Using this apparatus, a transfer experiment was performed in the same steps as in Example 1. Observation of the transferred pattern by SEM confirmed that the shape of the stamper was transferred. In addition, the relationship between the stage temperature and time was evaluated. The results are shown in FIG. The time required for the temperature to return to 100 ° C. or lower was about 30 minutes including the holding time, and the overshoot during the temperature increase was about 10 ° C.
Comparing Example 1 with Comparative Example, it can be seen that the present invention shortens the cycle of heating and cooling and improves throughput.
[0037]
[Application example of the present invention]
Hereinafter, several fields to which the nanoprint using the stamper via the cushioning material of the present invention is preferably applied will be described.
[0038]
[Example 3: Bio (immune) chip]
FIG. 7 is a schematic diagram of a biochip 900. A flow path 902 having a depth of 3 μm and a width of 20 μm is formed in a glass substrate 901, and a sample containing DNA (deoxyribonucleic acid), blood, protein, etc. is introduced from an introduction hole 903, After flowing through the path 902, it flows into the discharge hole 904. A molecular filter 905 is provided in the channel 902. On the molecular filter 905, a projection assembly 100 having a diameter of 250 to 300 nanometers and a height of 3 micrometers is formed.
[0039]
FIG. 8 is a bird's-eye view in cross section of the vicinity where the molecular filter 905 is formed. A flow path 902 is formed in the substrate 901, and a projection assembly 100 is formed in a part of the flow path 902. The substrate 901 is covered by the upper substrate 1001, and the sample moves inside the flow path 902. For example, in the case of DNA chain length analysis, when a sample containing DNA is electrophoresed in the flow path 902, the DNA is separated into high resolution by the molecular filter 905 according to the DNA chain length. The sample that has passed through the molecular filter 905 is irradiated with laser light from a semiconductor laser 906 mounted on the surface of the substrate 901. When the DNA passes, the light incident on the photodetector 907 decreases by about 4%, so that the output signal from the photodetector 907 can be used to analyze the chain length of the DNA in the sample. The signal detected by the photodetector 907 is input to the signal processing chip 909 via the signal wiring 908. A signal wiring 910 is connected to the signal processing chip 909, and the signal wiring 910 is connected to an output pad 911 and connected to an external terminal. The power was supplied to each component from a power supply pad 912 provided on the surface of the substrate 901.
[0040]
FIG. 9 shows a cross-sectional view of the molecular filter 905. The molecular filter 905 of this embodiment includes a substrate 901 having a concave portion, a plurality of protrusions formed in the concave portion of the substrate 901, and an upper substrate 1001 formed so as to cover the concave portion of the substrate. Here, the tip of the protrusion is formed so as to be in contact with the upper substrate. Since the main component of the projection assembly 100 is an organic substance, it can be deformed, so that the projection assembly 100 is not damaged when the upper substrate 1001 is put on the flow path 902. Therefore, the upper substrate 1001 and the projection assembly 100 can be brought into close contact with each other. With such a configuration, the sample does not leak from the gap between the protrusion and the upper substrate 1001, and high-sensitivity analysis can be performed. As a result of actual analysis of the DNA chain length, the resolution of base pairs was 10 base pairs at half width in the glass protrusion assembly 100, whereas the base protrusion resolution was 100 base pairs in the organic protrusion assembly 100. Was improved to 3 base pairs in half width. In the molecular filter of the present embodiment, the projections and the upper substrate have a structure in which they are in direct contact. The adhesion can be improved.
[0041]
In this embodiment, the number of the flow paths 902 is one. However, different analyzes can be performed at the same time by arranging a plurality of flow paths 902 provided with protrusions of different sizes.
[0042]
In this example, DNA was examined as a specimen, but specific sugar chains, proteins, and antigens were analyzed by previously modifying molecules that react with sugar chains, proteins, and antigens on the surface of the projection assembly 100. Is also good. As described above, by modifying the surface of the protrusion with the antibody, the sensitivity of the immunoassay can be improved.
[0043]
By applying the present invention to a biochip, it is possible to obtain an effect of easily forming a projection for analysis made of an organic material having a nanoscale diameter. Further, by controlling the unevenness of the mold surface and the viscosity of the organic material thin film, the position, diameter, and height of the organic material projection can be controlled. A highly sensitive microchip for analysis can be provided.
[0044]
[Example 4: Multilayer wiring board]
FIG. 10 is a diagram illustrating a process for manufacturing a multilayer wiring board. First, as shown in FIG. 10A, a resist 702 is formed on the surface of a multilayer wiring board 1001 composed of a silicon oxide film 1002 and copper wiring 1003, and then a pattern is transferred by a stamper (not shown). Next, when the exposed region 703 of the multilayer wiring substrate 1001 is dry-etched with CF ₄ / H ₂ gas, the exposed region 703 on the surface of the multilayer wiring substrate 1001 is processed into a groove shape as shown in FIG. Next, the resist 702 is subjected to resist etching by RIE to remove a portion of the resist having a low step, so that an exposed region 703 is formed in an enlarged manner as shown in FIG. When dry etching of the exposed region 703 is performed from this state until the depth of the previously formed groove reaches the copper wiring 1002, a structure as shown in FIG. 10D is obtained, and then the resist 702 is removed. By doing so, a multilayer wiring board 1001 having a groove shape on the surface as shown in FIG. From this state, after forming a metal film on the surface of the multilayer wiring board 1001 by sputtering (not shown), electrolytic plating is performed to form a metal plating film 1004 as shown in FIG. Thereafter, if the metal plating film 1004 is polished until the silicon oxide film 1002 of the multilayer wiring substrate 1001 is exposed, the multilayer wiring substrate 1001 having the metal wiring on the surface can be obtained as shown in FIG.
[0045]
Another process for manufacturing a multilayer wiring board will be described. When dry etching of the exposed region 703 from the state shown in FIG. 10A is performed until the copper wiring 1003 inside the multilayer wiring board 1001 is reached, the structure shown in FIG. 10H is obtained. . Next, the resist 702 is etched by RIE to remove a portion of the resist having a low step, thereby obtaining a structure shown in FIG. From this state, when a metal film 1005 is formed on the surface of the multilayer wiring substrate 1001 by sputtering, the structure shown in FIG. 10J is obtained. Next, the structure shown in FIG. 10K is obtained by removing the resist 702 by lift-off. Next, by performing electroless plating using the remaining metal film 1005, a multilayer wiring board 1001 having a structure shown in FIG. 10L can be obtained.
By applying the present invention to a multilayer wiring board, a wiring having high dimensional accuracy can be formed.
[0046]
[Example 5: Magnetic disk]
FIG. 11 is an overall view and an enlarged cross-sectional view of the magnetic recording medium according to the present embodiment. The substrate is made of glass having fine irregularities. On the substrate, a seed layer, an underlayer, a magnetic layer, and a protective layer are formed. Hereinafter, the method for manufacturing the magnetic recording medium according to the present embodiment will be described with reference to FIG. FIG. 11 is a cross-sectional view of a method of forming concavities and convexities on glass by a nanoprinting method, taken in a radial direction. First, a glass substrate is prepared. In the present embodiment, soda lime glass is used. The material of the substrate is not particularly limited as long as it has flatness, and another glass substrate material such as aluminosilicate glass or a metal substrate such as Al may be used. Then, as shown in FIG. 11A, a resin film was formed using a spin coater so as to have a thickness of 200 nm. Here, PMMA (polymethyl methacrylate) was used as the resin.
[0047]
On the other hand, as a mold, an Si wafer having a groove formed so as to be concentric with a hole at the center of the magnetic recording medium is prepared. The groove dimensions were 88 nm in width and 200 nm in depth, and the distance between grooves was 110 nm. Since the irregularities of this mold were very fine, they were formed by photolithography using an electron beam. Next, as shown in FIG. 12B, the resin is heated to 250 ° C. to lower the resin viscosity, and then the mold is pressed. When the mold is released at a temperature equal to or lower than the glass transition point of the resin, a pattern as shown in FIG. By using the nanoprinting method, it is possible to form a pattern that is smaller than the wavelength of visible light and that exceeds the limit of the size that can be exposed by general photolithography. Further, a pattern as shown in FIG. 12D is formed by removing the residual film remaining on the bottom of the resin pattern by dry etching. By using the resin film as a mask and further etching the substrate with hydrofluoric acid, the substrate can be processed as shown in FIG. 12 (e). ), A groove having a width of 110 nm and a depth of 150 nm was formed. Thereafter, a seed layer made of NiP is formed on the glass substrate by electroless plating. In a general magnetic disk, the NiP layer is formed with a thickness of 10 μm or more, but in the present embodiment, the thickness is set to 100 nm in order to reflect the fine irregularities formed on the glass substrate also in the upper layer. Further, by using a sputtering method generally used for forming a magnetic recording medium, a Cr underlayer 15 nm, a CoCrPt magnetic layer 14 nm, and a C protective layer 10 nm are sequentially formed to form the magnetic recording medium of the present embodiment. Produced. In the magnetic recording medium of the present embodiment, the magnetic material is radially separated by a nonmagnetic layer wall having a width of 88 nm. Thereby, the in-plane magnetic anisotropy could be increased. Although concentric pattern formation (texturing) using a polishing tape is conventionally known, the pattern interval is as large as a micron scale, and it is difficult to apply it to a high-density recording medium. The magnetic recording medium of this example secured magnetic anisotropy with a fine pattern using a nanoprinting method, and was able to realize high-density recording of 400 Gb / sq. The pattern formation by nanoprinting is not limited to the circumferential direction, and the non-magnetic partition can be formed in the radial direction. Furthermore, the effect of imparting magnetic anisotropy described in the present embodiment is not particularly limited by the materials of the seed layer, the underlayer, the magnetic layer, and the protective layer.
[0048]
[Example 6: Optical waveguide]
In this embodiment, an example is described in which the optical device 100 in which the traveling direction of incident light changes is applied to an optical information processing apparatus.
FIG. 13 is a schematic configuration diagram of the manufactured optical circuit 500. The optical circuit 500 is composed of an aluminum nitride substrate 501 having a length of 30 mm, a width of 5 mm, and a thickness of 1 mm. It comprises a connector 504. The emission wavelengths of the ten semiconductor lasers differ by 50 nanometers, and the optical circuit 500 is a basic component of an optical multiplex communication system device.
[0049]
FIG. 14 is a schematic layout diagram of the protrusion 406 inside the optical waveguide 503. The end of the optical waveguide 503 has a trumpet shape with a width of 20 micrometers so that an alignment error between the transmission unit 502 and the optical waveguide 503 can be tolerated. The structure is led to. Although the protrusions 406 are arranged at intervals of 0.5 micrometers, the protrusions 406 are illustrated in FIG. 14 for simplification and less than the actual number.
[0050]
The optical circuit 500 can superimpose and output ten types of signal light having different wavelengths. However, since the traveling direction of light can be changed, the width of the optical circuit 500 can be made extremely short as 5 mm, and the size of the optical communication device can be reduced. There is an effect that can be done. Further, since the protrusions 406 can be formed by pressing the mold, an effect of reducing the manufacturing cost can be obtained. In this embodiment, the device is a device that superimposes input light. However, it is clear that the optical waveguide 503 is useful for all optical devices that control the optical path.
[0051]
By applying the present invention to an optical waveguide, it is possible to obtain an effect that the traveling direction of light can be changed by propagating signal light in a structure in which protrusions mainly composed of an organic substance are periodically arranged. In addition, since the projection can be formed by a simple manufacturing technique of pressing a mold, an effect of manufacturing an optical device at low cost can be obtained.
[0052]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, high throughput transfer is attained by the heat insulation structure which made the area | region which hold | maintains the board | substrate pressurizing surface of a stamper smaller than the cross-sectional area of the board | substrate pressurizing surface.
[Brief description of the drawings]
FIG. 1 is a schematic view showing each step of nanoprinting.
FIG. 2 is a nanoprinting apparatus having a heat insulating structure on a stage according to the present invention.
FIG. 3 is a sectional view of a portion AA ′.
FIG. 4 is a device in which a head portion is modified.
FIG. 5 shows a nanoprinting apparatus in which a conventional stage is directly connected to a support.
FIG. 6 shows the results of evaluating the relationship between stage temperature and time.
FIG. 7 is a schematic diagram of a biochip.
FIG. 8 is a sectional bird's-eye view of the vicinity where a molecular filter is formed.
FIG. 9 is a cross-sectional view of a molecular filter.
FIG. 10 illustrates a step for manufacturing a multilayer wiring board.
FIG. 11 is an overall view and an enlarged cross-sectional view of a magnetic recording medium.
FIG. 12 is a cross-sectional view of a method of forming concavities and convexities on glass by a nanoprinting method, cut in a radial direction.
FIG. 13 is a schematic configuration diagram of an optical circuit 500.
FIG. 14 is a schematic layout diagram of protrusions inside the optical waveguide.
[Explanation of symbols]
Reference Signs List 1 Frame 2 Head leveling mechanism 3 Head 4 Stage 5 Support 6 Stage pressing mechanism 7 Stamper 8 Sample 9 Vacuum chamber 10 Vacuum chamber opening / closing mechanism 13 Buffer material

Claims (5)

In order to form a fine structure on the substrate, in a nanoprinting device that heats and presses the substrate and a stamper with fine irregularities on the surface,
A nanoprinting apparatus having a heat insulating structure in which a cross-sectional area of a portion holding the substrate pressing surface of the stamper is smaller than a cross-sectional area of the substrate pressing surface of the stamper. The nanoprinting apparatus according to claim 1,
A portion of the stamper, which holds a substrate pressing surface, has a pillar structure. In order to form a fine structure on the substrate using a nanoprinting device, in the pattern transfer method of heating and pressing a substrate and a stamper with fine irregularities formed on the surface,
A pattern transfer method, wherein the transfer is performed by a heat insulating structure in which a cross-sectional area of a portion holding the substrate pressing surface of the stamper is smaller than a cross-sectional area of the substrate pressing surface of the stamper. The pattern transfer method according to claim 3,
A pattern transfer method, wherein a portion of the stamper that holds a substrate pressing surface has a pillar structure. The pattern transfer method according to claim 3,
A pattern transfer method, wherein the pattern transfer is performed by heating and deforming a resin substrate or a resin film on the substrate.

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