JP2004119700A - Semiconductor device and its manufacturing method, circuit board, and electronic equipment - Google Patents

Abstract

A highly reliable and thin semiconductor device, a method of manufacturing the same, a circuit board, and an electronic device are provided.
The semiconductor device includes an inner lead, a die pad, and a semiconductor chip bonded to the die pad such that a surface on which the electrode is formed faces the die pad; an inner lead; And a sealing portion 18 for sealing the inner lead 30, the die pad 14, the semiconductor chip 10 and the wire 16, and an outer lead 40 extending outside the sealing portion 18. The surface of the inner lead 30 to which the wire 16 is bonded is in a direction in which the surface of the semiconductor chip 10 on which the electrode 12 is formed faces more than the surface of the semiconductor chip 10 opposite to the surface on which the electrode 12 is formed. Be placed on the side.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device and a method for manufacturing the same, a circuit board, and an electronic device.
[0002]
BACKGROUND OF THE INVENTION
2. Description of the Related Art As a package form of a semiconductor device, a package in which a semiconductor chip is mounted on a die pad of a lead frame and a semiconductor chip and inner leads are sealed with a resin or the like, such as QFP (Quad Flat Package), is known. These semiconductor devices are required to be reduced in thickness while maintaining reliability.
[0003]
An object of the present invention is to provide a highly reliable and thin semiconductor device, a method of manufacturing the same, a circuit board, and an electronic device.
[0004]
[Means for Solving the Problems]
(1) The semiconductor device according to the present invention comprises:
Inner lead,
Die pad,
A semiconductor chip having a plurality of electrodes, which is bonded to the die pad so that the surface on which the electrodes are formed faces the die pad,
A wire for electrically connecting the inner lead and the electrode,
A sealing portion for sealing the inner lead, the die pad, the semiconductor chip and the wire,
An outer lead extending outside the sealing portion,
Including
The surface of the inner lead to which the wire is bonded is closer to the surface of the semiconductor chip where the electrode is formed than the surface of the semiconductor chip opposite to the surface where the electrode is formed. Be placed on the side.
[0005]
ADVANTAGE OF THE INVENTION According to this invention, the sealing part of a semiconductor device can be made thin. Thus, a thinner semiconductor device can be provided.
[0006]
(2) In this semiconductor device,
The die pad may be arranged at substantially the same height as the inner leads.
[0007]
(3) In this semiconductor device,
The die pad may shift in a direction in which a surface bonded to the semiconductor chip faces the inner lead.
[0008]
(4) In this semiconductor device,
The die pad may shift in a direction opposite to a direction in which a surface bonded to the semiconductor chip faces the inner lead.
[0009]
(5) In this semiconductor device,
The electrode may be formed outside the die pad.
[0010]
(6) The semiconductor device is mounted on a circuit board according to the present invention.
[0011]
(7) An electronic apparatus according to the present invention includes the above semiconductor device.
[0012]
(8) The method for manufacturing a semiconductor device according to the present invention includes:
Bonding a semiconductor chip having a plurality of electrodes to the die pad such that the surface on which the electrodes are formed and the die pad face each other;
The electrode and the inner lead are electrically connected by a wire, and the surface of the inner lead to which the wire is bonded is smaller than the surface of the semiconductor chip opposite to the surface on which the electrode is formed. And arranging the die pad, the semiconductor chip, the inner leads, and the wires on a side of the semiconductor chip in a direction in which a surface on which the electrodes are formed faces.
[0013]
ADVANTAGE OF THE INVENTION According to this invention, the sealing part of a semiconductor device can be made thin. Therefore, a thin semiconductor device can be manufactured.
[0014]
(9) In this method of manufacturing a semiconductor device,
The die pad may be arranged at substantially the same height as the inner leads.
[0015]
(10) In this method of manufacturing a semiconductor device,
The method may further include shifting the die pad in a direction in which a surface bonded to the semiconductor chip faces the inner lead.
[0016]
(11) In this method of manufacturing a semiconductor device,
The method may further include shifting the die pad in a direction opposite to a direction in which a surface bonded to the semiconductor chip faces the inner lead.
[0017]
(12) In this method of manufacturing a semiconductor device,
The electrode may be formed outside the die pad.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments.
[0019]
(First Embodiment)
FIG. 1 is a sectional view of a semiconductor device according to a first embodiment to which the present invention is applied. The semiconductor device according to the present embodiment has a semiconductor chip 10. The planar shape of the semiconductor chip 10 is often rectangular (square or rectangular).
[0020]
A plurality of electrodes 12 are formed on one surface (active surface) of the semiconductor chip 10. The electrode 12 may be formed thin and flat on the semiconductor chip 10 using, for example, aluminum or copper. The planar shape of the electrode 12 may be rectangular or circular, and the shape is not limited. Alternatively, a bump may be formed on a pad to form the electrode 12. In this case, the bumps may be formed by electroless plating, or may be ball bumps formed by wire bonding. Further, nickel, chromium, titanium, or the like may be added between the pad and the bump as a diffusion preventing layer for the bump metal. The electrodes 12 may be arranged along at least one side (in most cases, two or four parallel sides) of the active surface of the semiconductor chip 10. Further, the electrode 12 may be formed only at the end of the active surface of the semiconductor chip 10, avoiding the center. Further, the electrodes 12 may be formed avoiding the corners of the active surface of the semiconductor chip 10.
[0021]
On the active surface of the semiconductor chip 10, a passivation film (not shown) may be formed avoiding at least a part of the electrode 12. The passivation film can be formed of, for example, SiO ₂ , SiN, polyimide resin, or the like.
[0022]
The semiconductor device according to the present embodiment has a die pad 14. The die pad 14 may be rectangular. Further, the die pad 14 may be arranged at substantially the same height as the inner lead 30.
[0023]
The semiconductor chip 10 may be bonded to the die pad 14. As shown in FIG. 1, the semiconductor chip 10 may be bonded to the die pad 14 such that the active surface of the semiconductor chip 10 and the die pad 14 face each other. By bonding the semiconductor chip 10 so that the active surface and the die pad 14 face each other, the sealing portion 18 can be thinned, and a thin semiconductor device can be manufactured. Note that an insulating film (not shown) may be formed on a portion of the active surface of the semiconductor chip 10 facing the die pad 14.
[0024]
A part of the semiconductor chip 10 (specifically, a part of the active surface of the semiconductor chip 10) may be exposed from the die pad 14. For example, a through hole may be provided in the center of the die pad to expose a part of the active surface of the semiconductor chip 10 from the die pad. The electrode 12 may be formed in a region of the active surface of the semiconductor chip 10 exposed from the die pad 14. As a result, electrical connection between the electrode 12 and the inner lead 30 is facilitated, and a highly reliable semiconductor device can be manufactured. In the example shown in FIG. 1, the edge of the active surface of the semiconductor chip 10 is exposed from the die pad 14, and the electrode 12 is formed on the edge of the active surface of the semiconductor chip 10. In other words, the electrode 12 is formed outside the die pad 14. In this case, the semiconductor chip 10 may be larger than the die pad 14.
[0025]
The semiconductor device according to the present embodiment has a plurality of leads 20. The lead 20 includes an inner lead 30 and an outer lead 40. The inner lead 30 is a portion that is sealed by the sealing portion 18 in the semiconductor device. The outer lead 40 is a portion extending outward from the sealing portion 18 and used for electrical connection with the outside.
[0026]
The semiconductor device according to the present embodiment has wires 16 for electrically connecting electrodes 12 and inner leads 30. The wire 16 may be formed of gold or the like. Note that the surface of the inner lead 30 to which the wire 16 is bonded may be disposed on the side in the direction in which the active surface of the semiconductor chip 10 faces, rather than the surface opposite to the active surface of the semiconductor chip 10.
[0027]
The semiconductor device according to the present embodiment has a sealing portion 18. The inner lead 30, the die pad 14, the semiconductor chip 10, and the wire 16 may be sealed by the sealing portion 18.
[0028]
The die pad 14 of the semiconductor device 1 according to the present embodiment is formed at substantially the same height as the inner leads 30. The semiconductor chip 10 is bonded to the die pad 14 such that the surface on which the electrodes 12 are formed faces the die pad 14. Therefore, the sealing portion 18 can be formed thin, and a thin semiconductor device can be manufactured.
[0029]
The semiconductor device according to the present embodiment is configured as described above, and a manufacturing method thereof will be described below.
[0030]
First, a lead frame 50 is prepared (see FIG. 2). The lead frame 50 may be formed by processing a copper-based or iron-based plate material. As the processing method, chemical etching or mechanical punching can be applied.
[0031]
The lead frame 50 has an outer frame 52. The outer frame 52 often has a rectangular shape, and the outer frame 52 becomes the outer shape of the lead frame 50.
[0032]
The lead frame 50 has tab suspension leads 54. The tab suspension lead 54 serves to support the die pad 14 and may be connected to a corner of the die pad 14.
[0033]
The lead frame 50 has a plurality of leads 20. The leads 20 are provided extending from the outer frame 52 toward the die pad 14. The lead 20 includes an inner lead 30 and an outer lead 40.
[0034]
The lead frame 50 has the die pad 14. The die pad 14 is a portion on which electronic components such as a semiconductor chip are mounted, and often has a rectangular shape. The die pad 14 may be formed at substantially the same height as the inner leads 30. That is, the semiconductor device may be manufactured without downsetting the die pad 14.
[0035]
Next, the semiconductor chip 10 having the plurality of electrodes 12 is bonded to the die pad 14. The semiconductor chip 10 may be fixed to the die pad 14 by, for example, an adhesive (not shown). The semiconductor chip 10 may be bonded to the die pad 14 such that the surface of the semiconductor chip 10 on which the electrodes 12 are formed (active surface) faces the die pad 14.
[0036]
The semiconductor chip 10 may be bonded to the die pad 14 so that a part of the active surface of the semiconductor chip 10 is exposed from the die pad 14. The region of the active surface of the semiconductor chip 10 where the electrode 12 is formed may be exposed from the die pad 14. As shown in FIG. 2, an electrode 12 may be formed at an end of the active surface of the semiconductor chip 10 and the electrode 12 may be exposed from the die pad 14. In other words, the electrode 12 may be formed outside the die pad 14. In this case, the semiconductor chip 10 may be larger than the die pad 14.
[0037]
Next, the inner leads 30 and the electrodes 12 are electrically connected by the wires 16. The wire 16 may be formed using a known bonding tool.
[0038]
Next, a molding step is performed. More specifically, as shown in FIG. 3, a lead frame 50 on which a semiconductor chip is mounted is set in a mold 70 (for example, a mold). Then, the die pad 14, the semiconductor chip 10, the inner leads 30, and the wires 16 are sealed with a sealing material (mold resin) 19 to form a sealing portion 18. Although a thermosetting resin is often used as the sealing material 19, the present invention is not limited to this. After the surface of the inner lead 30 to which the wire 16 is bonded is placed on the side of the semiconductor chip 10 in the direction in which the active surface of the semiconductor chip 10 faces, rather than the surface of the semiconductor chip 10 opposite to the active surface, the molding is performed. A step may be performed.
[0039]
Next, a first trimming step is performed. That is, the dam bar 56 connecting the leads 20 is cut. By cutting the dam bar 56 in advance, the cut surface of the dam bar 56 can be plated in the next electrolytic plating step. In the present embodiment, the tab suspension lead 54 is not cut at this time.
[0040]
Then, an electrolytic plating step is performed. That is, a metal film such as a brazing material (for example, solder) or tin is formed on a portion of the lead frame 50 exposed from the sealing portion 18. For example, since the plurality of outer leads 40 are connected to the outer frame 52 and are electrically connected via the outer frame 52, electrolytic plating is possible. Further, the die pad 14 is connected to the outer frame 52 by the tab suspension leads 54 and is electrically connected through the tab suspension leads 54, so that electrolytic plating is possible. By forming the metal film in this way, the corrosion resistance is improved.
[0041]
Next, a second trimming step is performed. That is, the outer lead 40 is cut from the outer frame 52, and the tab suspension lead 54 is removed. Subsequently, a forming step is performed. That is, the outer leads 40 are formed by bending the outer leads 40 so that they can be easily mounted on a circuit board. The second trimming step and the forming step may be performed simultaneously.
[0042]
Then, if necessary, the semiconductor device 1 can be manufactured through a marking step, an inspection step, and the like.
[0043]
FIG. 4 shows a circuit board 1000 on which the semiconductor device 1 according to the present embodiment is mounted. As an electronic apparatus having the semiconductor device 1, a notebook personal computer 2000 is shown in FIG. 5, and a mobile phone 3000 is shown in FIG.
[0044]
(Second embodiment)
FIG. 7 is a sectional view of a semiconductor device according to a second embodiment to which the present invention is applied. In this embodiment, the contents described in the first embodiment can be applied as much as possible.
[0045]
The semiconductor device according to the present embodiment has a die pad 80. The die pad 80 may be shifted in the direction in which the surface bonded to the semiconductor chip 10 faces the inner lead 30 (see FIG. 7). For other configurations, the contents described in the first embodiment can be applied.
[0046]
Except for the step of shifting the die pad 80, the contents described in the first embodiment can also be applied to the method of manufacturing the semiconductor device according to the present embodiment. The semiconductor device 2 according to the present embodiment may be manufactured by shifting the die pad 80 in a direction in which the surface bonded to the semiconductor chip 10 faces the inner lead 30. The step of shifting the die pad 80 may be performed before or after the step of bonding the semiconductor chip 10 to the die pad 80.
[0047]
(Third embodiment)
FIG. 8 is a sectional view of a semiconductor device according to a third embodiment to which the present invention is applied. In this embodiment, the contents described in the first embodiment can be applied as much as possible.
[0048]
The semiconductor device according to the present embodiment has a die pad 90. The die pad 90 may be shifted from the inner lead 30 in the direction opposite to the direction in which the surface bonded to the semiconductor chip 10 faces (see FIG. 8). Further, the surface of the inner lead 30 to which the wire 16 is bonded may be disposed on the side in the direction in which the active surface of the semiconductor chip 10 faces, rather than the surface opposite to the active surface of the semiconductor chip 10. For other configurations, the contents described in the first embodiment can be applied.
[0049]
Except for the step of shifting the die pad 90, the contents described in the first embodiment can also be applied to the method of manufacturing the semiconductor device according to the present embodiment. The semiconductor device 3 according to the present embodiment may be manufactured by shifting the die pad 90 in the direction opposite to the direction in which the surface bonded to the semiconductor chip 10 faces the inner lead 30. It should be noted that the surface of the inner lead 30 to which the wire 16 is bonded is arranged on the side in the direction in which the active surface of the semiconductor chip 10 faces, rather than the surface opposite to the active surface of the semiconductor chip 10. The die pad 14 may be shifted.
[0050]
The present invention is not limited to the embodiments described above, and various modifications are possible. For example, the invention includes configurations substantially the same as the configurations described in the embodiments (for example, a configuration having the same function, method, and result, or a configuration having the same object and result). Further, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. Further, the invention includes a configuration having the same operation and effect as the configuration described in the embodiment, or a configuration capable of achieving the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a semiconductor device according to a first embodiment to which the present invention is applied;
FIG. 2 is a diagram illustrating a method of manufacturing a semiconductor device according to a first embodiment to which the present invention is applied.
FIG. 3 is a diagram illustrating a method of manufacturing a semiconductor device according to a first embodiment to which the present invention is applied.
FIG. 4 is a diagram illustrating a circuit board on which the semiconductor device according to the first embodiment of the present invention is mounted;
FIG. 5 is a diagram illustrating an electronic apparatus including the semiconductor device according to the first embodiment to which the present invention is applied;
FIG. 6 is a diagram illustrating an electronic apparatus including the semiconductor device according to the first embodiment to which the present invention is applied;
FIG. 7 is a diagram showing a semiconductor device according to a second embodiment to which the present invention is applied.
FIG. 8 is a diagram showing a semiconductor device according to a third embodiment to which the present invention is applied.
[Explanation of symbols]
Reference Signs List 10 semiconductor chip, 12 electrodes, 14 die pad, 16 wires, 18 sealing portion, 30 inner lead, 40 outer lead

Claims (12)

Inner lead,
Die pad,
A semiconductor chip having a plurality of electrodes, which is bonded to the die pad so that the surface on which the electrodes are formed faces the die pad,
A wire for electrically connecting the inner lead and the electrode,
A sealing portion for sealing the inner lead, the die pad, the semiconductor chip and the wire,
An outer lead extending outside the sealing portion,
Including
The surface of the inner lead to which the wire is bonded is closer to the surface of the semiconductor chip where the electrode is formed than the surface of the semiconductor chip opposite to the surface where the electrode is formed. Semiconductor device arranged on the side. The semiconductor device according to claim 1,
The semiconductor device, wherein the die pad is arranged at substantially the same height as the inner leads. The semiconductor device according to claim 1,
The semiconductor device, wherein the die pad is shifted in a direction in which a surface bonded to the semiconductor chip faces the inner lead. The semiconductor device according to claim 1,
The semiconductor device, wherein the die pad is shifted in a direction opposite to a direction in which a surface bonded to the semiconductor chip faces the inner lead. The semiconductor device according to claim 1, wherein
A semiconductor device in which the electrode is formed outside the die pad. A circuit board on which the semiconductor device according to claim 1 is mounted. An electronic apparatus comprising the semiconductor device according to claim 1. Bonding a semiconductor chip having a plurality of electrodes to the die pad such that the surface on which the electrodes are formed and the die pad face each other;
Electrically connecting the electrodes and inner leads by wires, and
The surface of the inner lead to which the wire is bonded is closer to the surface of the semiconductor chip where the electrode is formed than the surface of the semiconductor chip opposite to the surface where the electrode is formed. A method for manufacturing a semiconductor device, comprising: disposing the die pad, the semiconductor chip, the inner lead, and the wire on a side. The method for manufacturing a semiconductor device according to claim 8,
A method of manufacturing a semiconductor device, wherein the die pad is arranged at substantially the same height as the inner leads. The method for manufacturing a semiconductor device according to claim 8,
A method for manufacturing a semiconductor device, further comprising: shifting the die pad in a direction in which a surface bonded to the semiconductor chip faces the inner lead. The method for manufacturing a semiconductor device according to claim 8,
A method for manufacturing a semiconductor device, further comprising: shifting the die pad in a direction opposite to a direction in which a surface bonded to the semiconductor chip faces the inner lead. The method for manufacturing a semiconductor device according to claim 8, wherein
A method for manufacturing a semiconductor device, wherein the electrode is formed outside the die pad.

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