JP2004111691A - Semiconductor processing apparatus, semiconductor processing method, semiconductor device and method of manufacturing the same - Google Patents

Abstract

An object of the present invention is to provide a semiconductor processing apparatus and a semiconductor processing method capable of improving the operation rate of the apparatus and realizing a use period near the original life of the container.
A semiconductor processing apparatus according to the present invention includes a bell jar 1 that forms a semiconductor processing chamber in which semiconductor processing such as etching is performed by generating plasma, and is attached to the bell jar 1 by a mounting jig 2a to emit plasma. It has a spectrum detector 2 for detecting the light emission intensity of the body 3 and a control unit 4 for judging the replacement time of the bell jar 1 based on the light emission intensity detected by the spectrum detector 2. The control unit 4 measures the thickness of the bell jar 1 from the emission intensity detected by the spectrum detector 2 and determines that it is time to replace the bell jar 1 when the thickness of the bell jar 1 becomes equal to or less than a predetermined thickness. Things.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor processing apparatus, a semiconductor processing method, a semiconductor device, and a method of manufacturing the same, each of which includes a container that forms a semiconductor processing chamber in which semiconductor processing is performed by generating plasma.
[0002]
[Prior art]
In the manufacture of a semiconductor device such as a semiconductor device, a required film is formed on an object to be processed such as a wafer, and a plasma etching process for processing the film into a predetermined pattern is performed. In the etching processing chamber for performing the plasma etching processing, products generated by the etching processing adhere to the inner walls, electrodes, and the like as dirt and are deposited.
[0003]
The deposition amount of this product increases as the number of times of processing increases, and the product is peeled off and adheres to an object to be processed, resulting in poor etching. For this reason, the bell jars constituting the etching processing chamber periodically perform wet cleaning, dry cleaning, and the like based on the number of wafers counted or the etching processing time. Here, in the wet cleaning, a bell jar is removed from the apparatus, and the bell jar is washed with a chemical solution or the like. Dry cleaning is cleaning by plasma without removing the bell jar from the apparatus.
[0004]
In addition, since the bell jar made of quartz is also shaved when the above-described plasma etching process is performed, when the bell jar is removed from the apparatus for wet cleaning, the thickness of the bell jar is measured to measure a decrease in the thickness, and a certain amount is measured. The life of the bell jar was defined as the thickness with a margin.
[0005]
[Problems to be solved by the invention]
As described above, in the conventional plasma etching apparatus, the apparatus has to be stopped in order to measure the thickness of the bell jar, so there is a time loss, and the operation loss of the apparatus is reduced due to the time loss, Throughput may decrease.
[0006]
As a method of measuring the thickness of the bell jar, there are a method of measuring the thickness by applying an ultrasonic wave to a portion to be measured, and a method of directly measuring the thickness of the bell jar with a clamp interposed therebetween. The measurement method using ultrasonic waves has a property that an error increases when the part to be measured is not a plane, and the part for measuring the thickness of the bell jar is often a curved surface, so the measurement error becomes relatively large. . Also, the measuring method using a clamp has a property that an error increases if the portion to be measured is not a plane, so that the measuring error becomes relatively large. For this reason, even if the thickness of the bell jar is measured, a measurement error must be taken into account, so that the service life of the bell jar often becomes shorter than its original life.
[0007]
The present invention has been made in consideration of the above circumstances, and has as its object to improve the operation rate of an apparatus and realize a semiconductor processing apparatus and a semiconductor processing apparatus capable of realizing a use period close to the original life of a container. It is an object of the present invention to provide a method, a semiconductor device and a method for manufacturing the same.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, a semiconductor processing apparatus according to the present invention includes a container forming a semiconductor processing chamber in which semiconductor processing is performed by generating plasma,
A detector attached to the container and detecting the emission intensity of the plasma luminous body;
A control unit that determines the replacement time of the container from the emission intensity detected by the detector,
It is characterized by having.
[0009]
According to the semiconductor processing apparatus, the emission intensity of the plasma illuminant generated when performing the semiconductor processing can be detected by the detector, and the control unit can determine the replacement time of the container based on the emission intensity. For this reason, there is no need to stop the apparatus and remove the container to measure the thickness unlike the conventional semiconductor processing apparatus. Therefore, the operation rate of the device can be improved. In addition, since the replacement time of the container is determined by detecting the emission intensity of the plasma luminous body, the measurement error can be reduced as compared with the conventional measurement method using an ultrasonic wave or the measurement method using a clamp. Therefore, it is possible to realize a use period close to the original life of the container.
[0010]
Further, in the semiconductor processing apparatus according to the present invention, the control unit measures the thickness of the container from the emission intensity detected by the detector, and when the thickness of the container is equal to or less than a predetermined thickness, It is preferable to determine the time for replacement.
[0011]
Further, in the semiconductor processing apparatus according to the present invention, the semiconductor processing may be an etching processing.
[0012]
The semiconductor processing method according to the present invention is a semiconductor processing method for performing semiconductor processing by generating plasma in a container,
The emission intensity is measured by detecting the emission spectrum of the plasma emitter in the container during semiconductor processing through the wall of the container,
The replacement time of the container is determined from the measured light emission intensity.
[0013]
Further, in the semiconductor processing method according to the present invention, the determination of the replacement time of the container, the thickness of the container is measured from the measured emission intensity, when the thickness of the container is less than a predetermined thickness, It is preferable to determine when it is time to replace the battery.
[0014]
Further, in the semiconductor processing method according to the present invention, the semiconductor processing may be an etching processing.
[0015]
A semiconductor device according to the present invention is manufactured by performing semiconductor processing using the semiconductor processing device according to any one of claims 1 to 3.
[0016]
A semiconductor device according to the present invention is manufactured by performing semiconductor processing using the semiconductor processing method according to any one of claims 4 to 6.
[0017]
A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device having a step of performing semiconductor processing using a semiconductor processing apparatus,
The semiconductor processing device is
A container constituting a semiconductor processing chamber in which semiconductor processing is performed by generating plasma;
A detector attached to the container and detecting the emission intensity of the plasma luminous body;
A control unit that determines the replacement time of the container from the emission intensity detected by the detector,
It is characterized by having.
[0018]
Further, in the method of manufacturing a semiconductor device according to the present invention, the control unit measures the thickness of the container from the emission intensity detected by the detector, when the thickness of the container is less than a predetermined thickness, It is preferable to determine when it is time to replace the container.
[0019]
Further, in the method of manufacturing a semiconductor device according to the present invention, the semiconductor processing may be an etching processing.
[0020]
A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device having a step of performing semiconductor processing using a semiconductor processing method,
The semiconductor processing method includes:
A method for performing semiconductor processing by generating plasma in a container,
The emission intensity is measured by detecting the emission spectrum of the plasma emitter in the container during semiconductor processing through the wall of the container,
The replacement time of the container is determined from the measured light emission intensity.
[0021]
Further, in the method of manufacturing a semiconductor device according to the present invention, the determination of the replacement time of the container is performed by measuring the thickness of the container from the measured emission intensity, and determining that the thickness of the container is equal to or less than a predetermined thickness. It is preferable to determine when it is time to replace the container.
[0022]
Further, in the method of manufacturing a semiconductor device according to the present invention, the semiconductor processing may be an etching processing.
[0023]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a configuration diagram showing a plasma etching apparatus as an example of a semiconductor processing apparatus according to an embodiment of the present invention.
[0024]
This plasma etching apparatus has a bell jar 1 made of quartz constituting a plasma etching processing chamber. The bell jar 1 has a spectrum so as to face a plasma luminous body 3 such as ions and radicals generated during the plasma etching processing. The detector 2 is mounted by a mounting jig 2a. The spectrum detector 2 is disposed at a portion where the bell jar 1 is likely to be thinned by performing a plasma etching process on the bell jar 1. The controller 4 is connected to the spectrum detector 2. The control unit 4 has a function of performing control as described later and determining the timing of replacing the bell jar.
[0025]
The spectrum detector 2 is detachably attached to the bell jar 1 by an attachment jig 2a. The spectrum detector 2 is installed at any place where the plasma generated inside the bell jar 1 can be observed. This installation position enables direct observation of plasma generated by installing the lower electrode (not shown) and the upper electrode (not shown) at a position where they are viewed sideways.
[0026]
Although the specific structure inside and outside the bell jar 1 is not shown, for example, it is as follows. In the bell jar, an upper electrode and a lower electrode, which are parallel plate electrodes, are arranged to face each other. The lower electrode serves as a stage on which a semiconductor wafer to be etched is placed. The upper electrode is connected to GND, and the lower electrode is connected to a high frequency power supply for applying high frequency power. A matching device for matching high-frequency power applied to the semiconductor wafer is provided between the high-frequency power supply and the lower electrode. The matching device has a variable coil wired in series and a variable capacitor. The upper part of the bell jar 1 is connected to a gas supply system, and the lower part of the bell jar 1 is connected to a vacuum pump.
[0027]
The spectrum detector 2 includes an optical filter (which may be another optical unit such as a monochromator) for separating light of a specific wavelength from a plasma emission spectrum from the inside of the bell jar 1 and a light amount of the specific wavelength light separated by the optical filter. A light quantity measuring device for measuring the luminous intensity by converting the electric signal into a corresponding electric signal. The control unit 4 is electrically connected to the light quantity measuring device, and performs data processing of an output value to detect a replacement time of the bell jar 1.
[0028]
Next, a method of performing an etching process using the above-described plasma etching apparatus will be described.
The inside of the bell jar 1 is evacuated by a vacuum pump, and a constant flow rate of etching gas is supplied from a gas supply system to maintain the inside of the bell jar 1 at a constant pressure. In this state, high-frequency power is applied to the lower electrode from the high-frequency power supply, matching is performed by the matching device, plasma is generated between the upper electrode and the lower electrode, and the semiconductor wafer placed on the lower electrode is plasma-etched. Various types of semiconductor wafers can be used for etching. For example, a silicon oxide film is deposited on the entire surface of a silicon wafer, and a photoresist film is patterned on the silicon oxide film. It is a pattern formed.
[0029]
The plasma etching of the semiconductor wafer generates plasma luminous bodies 3 such as ions and radicals. The plasma luminous spectrum emitted from the luminous bodies 3 is taken in from the wall of the bell jar 1 and passed through the optical filter of the spectrum detector 2. Then, the light is introduced into the light quantity measuring device, thereby detecting the light emission intensity of the specific wavelength light selected by the optical filter. Then, the control unit calculates the transmission amount of the plasma emission from the emission intensity, and extrapolates the thickness of the bell jar 1 from the result to determine the life of the bell jar.
[0030]
FIG. 2 shows an example of the relationship between the emission intensity detected as described above and the plasma processing time. The plasma processing times 1 to 5 shown in FIG. 2 indicate the timing at which the inside of the bell jar 1 is dry-cleaned. When the dry cleaning is performed, the number of etching processes for the product is set in advance so as not to cause a product defect. As the number of times the product is etched increases, the detection window 2a becomes cloudy, but this cloudiness can be removed by dry cleaning. For this reason, when the same etching target is etched under the same etching conditions, the emission intensity is detected to be high immediately after the dry cleaning in the bell jar is performed. Further, as the number of etching processes increases, clouding occurs, and the light emission intensity is gradually detected. Next, when dry cleaning is performed again, the light emission intensity is repeatedly detected.
[0031]
However, the bell jar 1 is also etched as the plasma etching process of the product is performed, so that the thickness of the bell jar 1 is gradually reduced. When the thickness of the bell jar 1 is reduced, the amount of the plasma emission spectrum transmitted through the wall of the bell jar increases, so that the emission intensity detected by the spectrum detector 2 increases. Therefore, as shown in FIG. 2, the emission intensity tends to increase as the plasma processing time increases. Then, the control unit is set so that when the predetermined light emission intensity 5 shown in FIG. 2 is detected by the spectrum detector 2, it is determined that the bell jar 1 needs to be replaced. The luminous intensity 5 is the luminous intensity when the thickness of the bell jar 1 is reduced by the etching process, and when the thickness is further reduced, the bell jar 1 has a risk of breaking. Since the light emission intensity 5 varies depending on the etching target and the etching conditions, it is preferable to confirm and set in advance by performing experiments and the like for each etching target and the etching conditions.
[0032]
According to the above embodiment, the plasma emission spectrum of the plasma luminous body 3 generated when the semiconductor wafer is plasma-etched is taken in from the wall surface of the bell jar 1, and the emission intensity is detected by the spectrum detector 2. The transmission amount of plasma emission is calculated from the emission intensity, and the thickness of the bell jar 1 can be measured from the result. Therefore, there is no need to stop the apparatus and remove the bell jar to measure the thickness unlike the conventional semiconductor processing apparatus. Therefore, the operation rate of the apparatus can be improved, and the throughput can be improved.
[0033]
Further, in the present embodiment, since the thickness of the bell jar is measured by detecting the intensity of the plasma emission spectrum, the measurement error is reduced as compared with the conventional measurement method using ultrasonic waves and the measurement method using clamps. Can be. Therefore, it is possible to realize a service life close to the original life of the bell jar, and to reduce the cost of semiconductor processing such as etching.
[0034]
The present invention is not limited to the above embodiment, but can be implemented with various modifications. For example, in the above embodiment, a plasma etching apparatus is used as the semiconductor processing apparatus of the present invention, but the present invention is not limited to this, and another semiconductor processing apparatus using plasma can be used. It is.
[0035]
In the above embodiment, a plasma etching process is used as a semiconductor processing method of the present invention. However, the present invention is not limited to this, and another semiconductor processing method may be used as long as the semiconductor processing uses plasma. Is also possible.
[0036]
In the above embodiments, the semiconductor processing device and the semiconductor processing method have been described. However, the present invention is not limited to these, and the semiconductor device can be manufactured by performing semiconductor processing using the semiconductor processing device. The semiconductor device can be manufactured, and a semiconductor device can be manufactured by performing semiconductor processing using the semiconductor processing method. That is, the semiconductor device according to the present invention is manufactured by performing semiconductor processing using the semiconductor processing apparatus. Further, a semiconductor device according to the present invention is manufactured by performing semiconductor processing using the semiconductor processing method. Further, a method of manufacturing a semiconductor device according to the present invention includes a step of performing semiconductor processing using the semiconductor processing apparatus. Further, a semiconductor processing apparatus according to the present invention includes a step of performing semiconductor processing using the semiconductor processing method.
[0037]
【The invention's effect】
As described above, according to the present invention, the emission intensity of the plasma illuminant generated during the semiconductor processing is detected by the detector, and the control unit determines the replacement time of the container based on the emission intensity. Therefore, it is possible to provide a semiconductor processing apparatus, a semiconductor processing method, a semiconductor device, and a method of manufacturing the same, which can improve the operation rate of the apparatus and can realize a use period close to the original life of the container.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing a plasma etching apparatus as an example of a semiconductor processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating an example of a relationship between emission intensity detected by the spectrum detector illustrated in FIG. 1 and plasma processing time.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Bell jar 2 ... Spectrum detector 2a ... Mounting jig 3 ... Plasma luminous body 4 ... Control part 5 ... Predetermined light emission intensity

Claims (14)

A container constituting a semiconductor processing chamber in which semiconductor processing is performed by generating plasma;
A detector attached to the outside of the container and detecting the emission intensity of the plasma illuminant during semiconductor processing;
A control unit that determines the replacement time of the container from the emission intensity detected by the detector,
A semiconductor processing apparatus comprising: The said control part measures the thickness of a container from the light emission intensity detected by the detector, and when the thickness of the container becomes a predetermined thickness or less, determines that it is time to replace the container. Item 2. A semiconductor processing apparatus according to item 1. The semiconductor processing apparatus according to claim 1, wherein the semiconductor processing is an etching processing. In a semiconductor processing method of performing semiconductor processing by generating plasma in a container,
The emission intensity is measured by detecting the emission spectrum of the plasma emitter in the container during semiconductor processing through the wall of the container,
A semiconductor processing method comprising: determining a time for replacing a container based on the measured emission intensity. The determination of the replacement time of the container is characterized in that the thickness of the container is measured from the measured emission intensity, and when the thickness of the container becomes equal to or less than a predetermined thickness, it is determined that the replacement time of the container is determined. The semiconductor processing method according to claim 4. The semiconductor processing method according to claim 4, wherein the semiconductor processing is an etching processing. A semiconductor device manufactured by performing semiconductor processing using the semiconductor processing device according to claim 1. A semiconductor device manufactured by performing semiconductor processing using the semiconductor processing method according to claim 4. A method for manufacturing a semiconductor device having a step of performing semiconductor processing using a semiconductor processing apparatus,
The semiconductor processing device is
A container constituting a semiconductor processing chamber in which semiconductor processing is performed by generating plasma;
A detector attached to the outside of the container and detecting the emission intensity of the plasma illuminant during semiconductor processing;
A control unit that determines the replacement time of the container from the emission intensity detected by the detector,
A method for manufacturing a semiconductor device, comprising: The said control part measures the thickness of a container from the light emission intensity detected by the detector, and when the thickness of the container becomes a predetermined thickness or less, determines that it is time to replace the container. Item 10. A method for manufacturing a semiconductor device according to item 9. The method for manufacturing a semiconductor device according to claim 9, wherein the semiconductor processing is an etching processing. A method of manufacturing a semiconductor device having a step of performing semiconductor processing using a semiconductor processing method,
The semiconductor processing method includes:
A method for performing semiconductor processing by generating plasma in a container,
The emission intensity is measured by detecting the emission spectrum of the plasma emitter in the container during semiconductor processing through the wall of the container,
A method of manufacturing a semiconductor device, comprising determining a time for replacing a container from the measured emission intensity. The determination of the replacement time of the container is characterized in that the thickness of the container is measured from the measured emission intensity, and when the thickness of the container becomes equal to or less than a predetermined thickness, it is determined that the replacement time of the container is determined. A method for manufacturing a semiconductor device according to claim 12. 14. The method according to claim 12, wherein the semiconductor processing is an etching processing.

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