JP2004111680A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can be improved in the ease of cutting of a thin film resistor with laser light, and to provide a method of manufacturing the device. <P>SOLUTION: For example, a conductive film 10 is formed directly on the thin film resistor 6. The film 10 is formed so that the film 10 may be disposed in the laser-trimmed area of the resistor 6. Therefore, when the laser trimming is performed, the resistor 6 generates heat due to the laser light and, in addition, the conductive film 10 also generates heat by absorbing the laser light in the portion irradiated with the laser light. Since the heat added to the thin film resistor 6 increases, the ease of cutting of the resistor 6 is improved. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device having a thin film resistor that is trimmed by a laser and a method of manufacturing the same.
[0002]
[Prior art]
Conventionally, there is a laser trimming method as one of the semiconductor manufacturing techniques. FIG. 16 is a plan view of a semiconductor device having a thin film resistor, and FIG. 17 is a cross-sectional view taken along the line CC ′ in FIG. In FIG. 16, the TEOS film and the P-SiN film formed on the thin film resistor are omitted.
[0003]
On a semiconductor substrate 1 having a LOCOS oxide film 2 formed on a surface thereof, a BPSG film 3, a SiN film 4, and an insulating film such as TEOS (Tetra Ethyl OrthoSilicate) / SOG (Spin On Glass) / TEOS film 5 interposed. , CrSi and the like, and thin film resistor electrodes 7 are formed on both ends thereof. After that, an insulating film such as a TEOS film 8 and a P-SiN film 9 is formed on the thin film resistor 6. In the final process of the device formed in this way, laser trimming is performed by irradiating a laser beam to generate heat in a portion irradiated with the laser beam, and the heat blows a part of the thin film resistor 6. The resistance value is adjusted to a desired value.
[0004]
[Problems to be solved by the invention]
The ease with which a thin film resistor is cut by a laser depends on the structure of an insulating film existing around the thin film resistor as shown in JP-A-7-22585 and JP-A-10-22452. For example, when the variation in the thickness of the insulating film is large, the variation in the easiness of cutting the thin film resistor is also large.
[0005]
Further, as shown in Japanese Patent Application No. 2002-196146 filed earlier by the present inventors, when the end of the thin film resistor has a tapered shape due to the influence of processing, other portions are not formed at this end. It is harder to cut than. FIG. 18 shows a cross section of the semiconductor device at this time. As shown in the figure, when the thin film resistor 6 has a trapezoidal shape in which the side of the lower base is longer than the upper base, that is, the film thickness becomes thinner toward the end, the laser beam Since the absorptivity is lower than the region other than the end 6a, it is presumed that the end 6a is hard to cut.
[0006]
As described above, the ease with which the thin film resistor is cut is determined depending on the structure of the semiconductor device.
[0007]
In view of the above, it is an object of the present invention to provide a semiconductor device and a method of manufacturing the same, which can improve the easiness of cutting a thin film resistor by laser light as compared with the related art.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, according to the first aspect of the present invention, a material (10) of a thin film resistor (6) that directly contacts a region to be irradiated with a laser beam and absorbs the laser beam to generate heat. Is formed.
[0009]
According to the third aspect of the present invention, the step of forming the thin film resistor (6) on the semiconductor substrate (1) is performed so that the thin film resistor (6) is in direct contact with a region where laser trimming is to be performed. Forming a material (10) that absorbs laser light and generates heat; and irradiates the thin film resistor (6) with laser light to absorb the thin film resistor (6) and the laser light and generate heat (10). And performing a laser trimming of the thin film resistor (6).
[0010]
According to the first and third aspects of the present invention, when the thin film resistor is irradiated with the laser beam, the thin film resistor absorbs the laser beam and generates heat, and is formed on the thin film resistor at a portion irradiated with the laser beam. Materials that absorb laser light and generate heat also generate heat. Thus, the thin film resistor can be more easily cut by the laser light than a semiconductor device having no material that absorbs the laser light and generates heat.
[0011]
The material (10) that absorbs laser light and generates heat can be formed on the thin film resistor (6) after the thin film resistor (6) is formed. Further, it can be formed under the thin film resistor (6). In this case, before forming the thin film resistor (6), a material (10) that absorbs laser light and generates heat is formed on the insulating film. And a thin film resistor (6) is formed thereon.
[0012]
According to the second aspect of the present invention, of the thin film resistor (6), the material (10) that absorbs laser light and generates heat is directly provided on the end (6a) to be irradiated with laser light. It is characterized by being formed.
[0013]
According to the fourth aspect of the present invention, the step of forming the thin film resistor (6) on the semiconductor substrate (1) and the step of forming the thin film resistor (6) on the end (6a) where laser trimming is to be performed. Directly forming a material (10) that absorbs laser light and generates heat; and irradiating the thin film resistor (6) with laser light to absorb the thin film resistor (6) and the laser light and generate heat (10). And performing a laser trimming of the thin film resistor (6).
[0014]
If the end is tapered, the end is harder to cut during laser trimming than other parts. On the other hand, according to the second and fourth aspects of the present invention, since the conductive film is formed on the end portion of the thin film resistor, when laser light is applied to the end portion of the thin film resistor during laser trimming. In addition to the fact that the end of the thin film resistor absorbs laser light and generates heat, a material that absorbs laser light and generates heat also generates heat. This makes it easier to cut off the end of the thin film resistor by the laser light than a semiconductor device that does not have a material that absorbs the laser light and generates heat.
[0015]
Also in the inventions of claims 2 and 4, the material (10) that absorbs laser light and generates heat can be formed on the upper side after the thin film resistor (6) is formed. It can also be formed below the thin film resistor (6).
[0016]
As a method for forming the material (10) that absorbs laser light and generates heat, for example, the barrier metal (38) is patterned to form the barrier metal (11) and the electrode material (7). Forming a thin-film resistance electrode formed at the same time as leaving a barrier metal (38a) of a desired film thickness on the thin-film resistance (6), thereby absorbing the laser beam to generate heat. A film (10) can also be formed.
[0017]
Accordingly, the number of manufacturing steps can be reduced as compared with the case where the conductive film is simply formed on the thin film resistor in a step different from the patterning of the barrier metal.
[0018]
In addition, the code | symbol in the parenthesis of each said means shows the correspondence with the concrete means described in embodiment mentioned later.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
(1st Embodiment)
FIG. 1A is a plan view of a semiconductor device according to the first embodiment of the present invention. FIGS. 1B and 2 are a cross-sectional view taken along the line AA ′ and a line BB ′ in FIG. 1A, respectively. FIG. 1A is a top view of a thin film resistor formed on a semiconductor substrate, and a TEOS film and a P-SiN film formed on the thin film resistor are omitted.
[0020]
Most of the structure is the same as the conventional structure shown in FIGS. 16 and 17, but the semiconductor device of the present embodiment differs from the conventional one in that it has a conductive film 10 directly formed on the thin film resistor 6. Is different.
[0021]
More specifically, the structure of the semiconductor device of the present embodiment will be described. On the surface of the semiconductor substrate 1, the surface step depth caused by the formation of the LOCOS oxide film 2 is 200 to 300 nm, and the BPSG film 3 and the SiN film 4 are formed. , TEOS / SOG / TEOS film 5 are 600 nm or less, 100 nm or less, and 540 nm, respectively.
[0022]
The thin film resistor 6 is made of CrSi and has a thickness of 12 nm. As shown in FIG. 1B, at the end of the thin film resistor 6, a thin film resistor electrode composed of a TiW film 11 as a barrier metal and an Al film 7 is formed.
[0023]
Then, a conductive film 10 made of a W film is formed on the thin film resistor 6 and has a thickness of 0.1 nm. As shown in FIG. 1A, the conductive film 10 is formed on the entire surface of the thin film resistor 6 excluding the thin film resistor electrode.
[0024]
On the conductive film 10, a TEOS film 8 having a thickness of 0.3 μm and a P-SiN film 9 as a protective film having a thickness of 1.6 μm are formed. A metal wiring 12 made of an Al film is formed between the TEOS film 8 and the P-SiN film 9, and the metal wiring 12 and the thin-film resistance electrode 7 are formed via via holes formed in the TEOS film 8. And are electrically connected. In FIG. 1A, a connection portion (via) 12a between the metal wiring 12 and the thin-film resistance electrodes 7 and 12a is indicated by a mark x.
[0025]
When laser trimming is performed on the semiconductor device configured as described above, in the portion of the thin film resistor 6 irradiated with the laser beam, the thin film resistor 6 absorbs the laser beam and generates heat. The conductive film 10 formed on the resistor 6 also generates heat. Therefore, since more heat is applied to the thin film resistor 6 than in a structure in which the conductive film 10 is not formed, the thin film resistor 6 can be more easily cut by laser light.
[0026]
As shown in Japanese Patent Application Laid-Open No. Hei 10-22452, in a semiconductor device having BPSG films 3 having different thicknesses, large variations occur in the magnitude of the laser output at which laser trimming can be performed for the same thin film resistor. I do. This is because, of the laser light, the incident light that directly irradiates the thin film resistor and the reflected light that is reflected on the surface of the semiconductor substrate 1 and reaches the thin film resistor interfere with each other, and the BPSG film 3 has a specific thickness. It is presumed that the interference light is weakened at the position where the thin film resistor 6 is present, and the calorific value of the thin film resistor 6 is reduced.
[0027]
Therefore, in a semiconductor device having a thin-film resistor subjected to laser trimming, when the thickness of the BPSG film 3 has a large variation, the thin-film resistor is easily cut by laser light. That is, the processing stability of the thin film resistor is reduced.
[0028]
On the other hand, according to the present embodiment, even when the thickness of the BPSG film 3 varies, the conductive film 10 absorbs the laser beam and generates heat during laser trimming, so that the thin film resistor 6 Heat can be applied. Thus, even if the thickness variation of the BPSG film 3 is large, it is possible to suppress the processing stability of the thin film resistor from being reduced.
[0029]
The technique disclosed in Japanese Patent Application Laid-Open No. 10-21452 discloses a technique in which a laser beam reflected in this region is formed at an interface between a semiconductor substrate and an insulating film thereon by forming a region oblique to the substrate surface. Is made to interfere with the laser light incident on the thin film resistor in a complicated manner. Thus, even if the thickness of the BPSG film below the thin film resistor varies greatly, the variation in the ease of cutting the thin film resistor by the laser beam is suppressed.
[0030]
The inventors of the present invention have examined the easiness of cutting the thin film resistor. As a result, even when the thickness of the TEOS / SOG / TEOS film 5 between the BPSG film 3 and the thin film resistor 6 is large, the thin film resistor 6 It was found that the easiness of cutting varied. However, it has been found that the technique disclosed in the above-mentioned publication has a small effect of suppressing the variation in the easiness of cutting the thin film resistor due to the variation in the thickness of the TEOS / SOG / TEOS film 5.
[0031]
On the other hand, according to the present embodiment, even if the thickness variation of the TEOS / SOG / TEOS film 5 becomes large, the variation in the ease of cutting the thin film resistor 6 by the laser beam can be suppressed.
[0032]
In laser trimming, the thin film resistor 6 is normally cut in a direction perpendicular to the current direction from the end 6a of the thin film resistor 6. As shown in the drawing, when the end 6a of the thin film resistor 6 has a tapered shape, the end 6a is harder to cut than other portions.
[0033]
On the other hand, according to the present embodiment, even when the end 6a of the thin film resistor 6 has a tapered shape, the conductive film 10 absorbs laser light and generates heat during laser trimming. Heat can be applied to the end 6 a of the thin film resistor 6. This makes it easier to cut the end 6a of the thin film resistor 6 by the laser light.
[0034]
Next, a method of manufacturing the semiconductor device thus configured will be described. 3 to 13 show the manufacturing process. These figures are cross-sectional views taken along the line AA ′ in FIG. Here, an integrated circuit having a MOSFET and a thin-film resistor will be described as an example of the semiconductor device. However, the present invention is not limited to the MOSFET and can be applied to other semiconductor devices having a thin-film resistor.
[0035]
[Step shown in FIG. 3]
A silicon substrate 1 having an SOI structure in which a high impurity concentration n-type layer 1c and a low impurity concentration n-type layer 1d are stacked on a high impurity concentration p-type substrate 1a via a silicon oxide film 1b is prepared.
[0036]
After forming a trench reaching the silicon oxide film 1b at the boundary between the elements, a silicon oxide film 21a is formed on the side wall of the trench, and the space between the silicon oxide films 21a is filled with another crystal silicon layer 21b to separate the elements. I do.
[0037]
Next, ion implantation is selectively performed to form a p-type well layer 23 in a surface portion of the n-type layer 1d in the MOSFET formation region 22. Then, a LOCOS oxide film 2 is formed on the trench by LOCOS oxidation. At this time, in the formation region 24 of the thin film resistor 6, the LOCOS oxide film 2 has an uneven shape as a structure for improving workability of laser trimming of the thin film resistor 6 (see FIGS. 1 and 2).
[0038]
Further, after forming a gate oxide film 26 on the p-type well layer 23, polysilicon is deposited. Then, the gate electrode 28 is formed by patterning the polysilicon. Thereafter, ion implantation is performed using the gate electrode 28 as a mask, and heat treatment is performed to form the source region 25a and the drain region 25b.
[0039]
Thereafter, a BPSG film 3 serving as an interlayer insulating film is formed on the entire surface of the silicon substrate 1 by a CVD method or the like, and a reflow process is performed.
[0040]
[Step shown in FIG. 4]
After the contact hole 3a is formed in the BPSG film 3, a reflow process at about 900 to 950 ° C. is performed so that the edge of the contact hole 3a becomes gentle.
[0041]
[Step shown in FIG. 5]
A TiN film 30 as a barrier metal is formed with a thickness of about 100 nm. Then, after forming an AlSiCu film to a thickness of about 0.45 μm by sputtering, the TiN film 30 and the AlSiCu film are patterned by ECR (Electron cyclotron resonance) dry etching. Thus, the first Al film 31 and the wiring patterns 32a and 32b are formed.
[0042]
[Step shown in FIG. 6]
First, after forming the P-SiN film 4, a TEOS film 34 is formed by a CVD method. Furthermore, after applying SOG, the irregularities on the surface of the silicon substrate 1 are buried and flattened by SOG 35 by baking and etch-back processing. Further, a TEOS film 36 is formed by a CVD method. Thus, a TEOS / SOG / TEOS film 5 is formed.
[0043]
[Step shown in FIG. 7]
Then, after forming a CrSi film to a thickness of about 12 nm by sputtering, the CrSi film is patterned to form a thin film resistor 6.
[0044]
Further, a barrier metal 38 made of a TiW film is formed on the entire upper surface of the silicon substrate 1 including the thin film resistor 6 to a thickness of about 1000 °.
[0045]
[Step shown in FIG. 8]
An Al film 39 serving as an electrode for a thin film resistor is formed to a thickness of about 2000 °. Then, in order to perform a photolithography process, the photoresist 45 is patterned and left on both ends of the thin film resistor 6.
[0046]
[Step shown in FIG. 9]
Wet etching is performed using the photoresist 45 as a mask, and the Al thin film layer 39 is patterned to form the Al film 7.
[0047]
[Step shown in FIG. 10]
The barrier metal 38 is patterned by performing wet etching using the photoresist 45 and the patterned Al film 7 as a mask. In this wet etching, a H ₂ O ₂ / NH ₄ OH / H ₂ O-based solution is used as an etching solution.
Thus, a TiW film 11 is formed. In this way, electrodes for the thin film resistor constituted by the TiW film 11 and the Al film 7 are formed at both ends of the thin film resistor 6.
[0048]
At this time, TiW dissolves as complex ions, but the dissolution reaction of Ti is considered to be more active than W, and as a result, Ti is contained on the thin film resistor 6 and the TEOS / SOG / TEOS film 5. The remaining W film is finally left as a residue 38a which is an etching residue of TiW.
[0049]
Next, although not shown, a photoresist is formed on this region in order to use the residue 38 a located on the thin film resistor 6 as the conductive film 10. Then, the residue 38a located other than on the thin film resistor 6 is sufficiently oxidized by oxygen plasma treatment to form an oxide.
[0050]
[Step shown in FIG. 11]
Then, the residue 38a oxidized together with the photoresist and the photoresist 45 formed in the previous step are removed with a resist stripper such as an organic amine. At this time, the oxidized residue 38a is dissolved in the resist stripper and completely removed together with the photoresist. This is because the tungsten residue 38a is oxidized to have an affinity for the OH ^- group and is easily dissolved in an alkaline solution, so that it can be removed.
[0051]
[Step shown in FIG. 12]
The entire surface of the silicon substrate 1 is covered with the TEOS film 8.
[0052]
[Step shown in FIG. 13]
After forming a via hole 8a in the TEOS film 8, the second Al film (metal wiring) 12 is patterned through the via hole 8a. Further, after the entire upper surface of the silicon substrate 1 including the metal wiring 12 is covered with the P-SiN film 9 as a protective film, a reflow process is performed.
[0053]
After that, laser trimming is performed on the thin film resistor 6. At this time, of the thin film resistor 6 and the conductive film 10, the laser beam is absorbed at a portion irradiated with the laser beam to generate heat, thereby blowing the thin film resistor 6. Through these steps, a MOSFET integrated circuit is completed.
[0054]
In this embodiment, the residue 38 a generated when the barrier metal (TiW) 38 is wet-etched is used as the conductive film 10. Thereby, the conductive film 10 having a uniform thickness can be formed on the thin film resistor 6.
[0055]
Further, since the TiW film 38 is patterned to form the TiW film 11 constituting the thin-film resistance electrode and the conductive film 10 is formed at the same time, the conductive film 10 is formed in a step different from the step of patterning the TiW film 38. As compared with the case where the conductive film 10 is simply formed on the thin film resistor 6, the number of manufacturing steps can be reduced.
[0056]
When the residue 38a is used as the conductive film 10, the resistance of the conductive film 10 is about 10Ω. Since the sheet resistance of the thin film resistor 6 is about 500Ω and the resistance value of the conductive film 10 is about the error of the thin film resistor 6, the influence of the conductive film 10 on the resistance value of the thin film resistor is small. Further, the temperature coefficient of resistance is about 10 ppm, and the influence on the TCR is small.
[0057]
In the present embodiment, the case where a TiW film is used as the barrier metal has been described as an example, but other alloys containing W (tungsten) may be used. Further, a polymer material containing C as a main component can also be used.
[0058]
(2nd Embodiment)
FIG. 14 is a plan view of a semiconductor device as a first example of the present embodiment. FIG. 15 is a plan view of a semiconductor device as a second example of the present embodiment. These figures are views when the thin film resistor 6 is viewed from above the semiconductor substrate 1, and are partially modified from the structure shown in FIG.
[0059]
As shown in FIG. 14, of the thin film resistor 6 having the thin film resistor electrodes 7 at both ends, the conductive film 10 may be formed only on the end 6a so as to cover the end 6a of the thin film resistor 6. it can. As described above, when the end 6a of the thin film resistor 6 has a tapered shape, the end 6a is difficult to cut. Therefore, the conductive film 10 is formed directly on the tapered end 6a so as to be in direct contact with the end 6a. The cutting easiness due to the laser beam at the end 6a can be improved without changing the cutting easiness.
[0060]
As described above, the conductive film 10 can be disposed at a position where the ease of cutting by the laser light is desired to be improved.
[0061]
Further, as shown in FIG. 15, a structure in which the conductive film 10 is disposed only in a region where laser trimming is performed may be employed. By arranging the conductive film 10 in a region including at least the cut portion 51 by the laser beam, the conductive film 10 can generate heat during laser trimming. Also in this case, the ease with which the thin film resistor 6 is cut by the laser beam can be improved.
[0062]
In order to obtain the structure shown in this embodiment, in the process shown in FIG. 10 of the first embodiment, the pattern of the photoresist formed to leave the residue 38a on the thin film resistor 6 is changed. good.
[0063]
(Other embodiments)
In the above-described embodiments, the case where the residue 38a generated when forming the TiW film 11 is used as a material that absorbs laser light and generates heat is described. It can be formed on the resistor 6.
[0064]
In each of the above embodiments, the case where the conductive film 10 is formed on the thin film resistor 6 has been described as an example. However, in each of the above embodiments, the conductive film 10 formed on the thin film resistor 6 , Can be formed under the thin film resistor 6 in the same shape. Even in this case, since the conductive film 10 is in direct contact with the thin film resistor 6, the same effect as in the above-described embodiments can be obtained.
[0065]
In this case, the order of forming the thin film resistor 6 and the conductive film 10 may be changed. That is, before forming the thin film resistor 6, the conductive film 10 having a desired shape is formed on the TEOS / SOG / TEOS film 5 in a region where the thin film resistor 6 is to be formed. After that, the thin film resistor 6 is formed on the conductive film 10.
[0066]
As a material that absorbs laser light and generates heat, a material that absorbs more laser light than the thin film resistor 6, that is, a material that generates more heat than the thin film resistor 6, such as Ti, TiN, or TiW, instead of the W film. Other materials such as conductive films and polymers can also be used.
[Brief description of the drawings]
FIGS. 1A and 1B are diagrams showing a semiconductor device having a thin film resistor according to a first embodiment of the present invention, wherein FIG. 1A is a diagram when the thin film resistor is viewed from above, and FIG. It is AA 'line sectional drawing.
FIG. 2 is a cross-sectional view taken along the line BB ′ in FIG.
FIG. 3 is a diagram for explaining a manufacturing process of the semiconductor device having a thin film resistor according to the first embodiment of the present invention, and is a cross-sectional view along the line AA ′ in FIG.
FIG. 4 is a view illustrating a manufacturing step following FIG. 3;
FIG. 5 is a view illustrating a manufacturing step following FIG. 4;
FIG. 6 is a view illustrating a manufacturing step following FIG. 5;
FIG. 7 is a view illustrating a manufacturing step following FIG. 6;
FIG. 8 is a view illustrating a manufacturing step following FIG. 7;
FIG. 9 is a view illustrating a manufacturing step following FIG. 8;
FIG. 10 is a view illustrating a manufacturing step following FIG. 9;
FIG. 11 is a view illustrating a manufacturing step following FIG. 10;
FIG. 12 is a view illustrating a manufacturing step following FIG. 11;
FIG. 13 is a view illustrating a manufacturing step following FIG. 12;
FIG. 14 is a plan view of a semiconductor device as a first example in a second embodiment of the present invention.
FIG. 15 is a plan view of a semiconductor device as a second example according to the second embodiment of the invention.
FIG. 16 is a plan view of a conventional semiconductor device.
FIG. 17 is a sectional view taken along line CC ′ in FIG. 16;
FIG. 18 is a cross-sectional view similar to FIG. 17, schematically showing the structure of a thin-film resistor.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... LOCOS oxide film, 3 ... BPSG film, 4 ... SiN film,
5: TEOS / SOG / TEOS film, 6: thin film resistor, 7: Al film,
8 TEOS film 9 P-SiN film 10 Conductive film 11 TiW film
12 Metal wiring.

Claims (5)

In a semiconductor device having a thin film resistor (6) formed on a semiconductor substrate (1) and subjected to laser trimming,
A semiconductor device, wherein a material (10) that absorbs laser light and generates heat is formed directly in contact with a region to be irradiated with laser light in the thin film resistor (6). In a semiconductor device having a thin film resistor (6) formed on a semiconductor substrate (1) and subjected to laser trimming,
In the thin film resistor (6), a material (10) that absorbs laser light and generates heat is formed directly in contact with an end (6a) to be irradiated with laser light. Semiconductor device. In a method of manufacturing a semiconductor device having a thin film resistor (6) subjected to laser trimming,
Forming a thin film resistor (6) on a semiconductor substrate (1);
Forming a material (10) that absorbs laser light and generates heat so as to be in direct contact with a region where laser trimming is to be performed in the thin film resistor (6); Irradiating light to heat the thin film resistor (6) and the material (10) that absorbs the laser beam and generates heat, thereby performing laser trimming of the thin film resistor (6). Semiconductor device manufacturing method. In a method of manufacturing a semiconductor device having a thin film resistor (6) subjected to laser trimming,
Forming a thin film resistor (6) on a semiconductor substrate (1);
Forming a material (10) that absorbs laser light and generates heat so as to directly contact the end (6a) of the thin film resistor (6) where laser trimming is to be performed;
The thin film resistor (6) is irradiated with a laser beam, and at the end (6a), the thin film resistor (6) and a material (10) that absorbs the laser beam and generates heat are heated to generate the thin film resistor. (6) a step of performing laser trimming. Sequentially forming a barrier metal (38) and an electrode material (39) on the thin film resistor (6);
Patterning the electrode material (39);
Forming a thin-film resistance electrode electrically connected to the thin-film resistance (6) by patterning the barrier metal (38) and comprising the barrier metal (11) and the electrode material (7); And having
The barrier metal (38) is patterned to form a thin-film resistance electrode composed of the barrier metal (11) and the electrode material (7), and at the same time, a desired film is formed on the thin-film resistance (6). 5. The manufacturing of the semiconductor device according to claim 3, wherein a conductive film is formed as a material that absorbs the laser light and generates heat by leaving the thick barrier metal. Method.

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