JP2004031181A - Pattern film forming apparatus and pattern film forming method - Google Patents

Abstract

An object of the present invention is to provide a pattern film forming apparatus and a method capable of arranging a thinned mask on a substrate surface with high accuracy and performing pattern formation with good positional accuracy.
A substrate holding means (3) for vertically holding a substrate (W), and a mask (M) opposed to one main surface (Wa) of the substrate (W) held by the substrate holding means (M) with a vertical tension applied to the mask (M). Mask holding means 5, a position detecting means 7 for detecting a positional relation between the substrate W held by the substrate holding means 3 and a mask M held by the mask holding means 5, and a positional relationship detected by the position detecting means 7. And an alignment unit 9 for moving the substrate holding unit 3 so that the substrate W and the mask M have a predetermined positional relationship.
[Selection] Fig. 2

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a pattern film forming apparatus and a pattern film forming method, and more particularly, to a pattern film forming apparatus and a pattern forming method for forming a film pattern on one principal surface side of a substrate using a mask formed separately from the substrate. It relates to a membrane method.
[0002]
[Prior art]
As a next-generation full-color display device, an organic EL display that is thin, has high luminance, has high definition, consumes low power, and has a wide color reproducibility has been attracting attention. The organic EL element used in this organic EL display has an organic film sandwiched between an anode and a cathode, and an element that emits light of each color can be obtained by selecting a material of the organic film. By arranging the elements in a predetermined state, an organic EL display capable of full-color display can be formed.
[0003]
By the way, in order to make use of the above-mentioned excellent features of the organic EL display, it is necessary to form a high-definition RGB pixel pattern of an organic film on a thin glass substrate surface. However, since the organic film has low resistance to a solvent, it is difficult to form a pattern by lithography. For this reason, in the manufacture of an organic EL display, a mask is formed separately from a glass substrate, and vapor deposition is performed in a state where the mask is closely attached to the glass substrate surface. The organic film is patterned.
[0004]
[Problems to be solved by the invention]
However, in the mask evaporation method, since the opening wall of the mask is shaded by the evaporation material, the film thickness in the peripheral region of the opening tends to be thin, and the film thickness distribution in the pixel tends to be deteriorated. It must be thinned to about μm. For this reason, "bending", "distortion", and even "undulation" are generated in the mask, and the planarity is likely to be deteriorated. When the mask is disposed in close contact with the substrate surface, an error is likely to occur in the alignment with respect to the substrate. It has been difficult to form an organic film pattern with high positional accuracy on the portion.
[0005]
As a method for preventing such deterioration of the flatness of the mask, for example, JP-A-2002-69619 and JP-A-10-41069 disclose a method of securing the flatness by welding and fixing the mask to a frame. Is disclosed. However, in such a method, a new problem arises in that the mask is distorted in a heating temperature atmosphere during vapor deposition due to a difference in thermal expansion coefficient between the mask, the frame, and the welding material. Also, the mask must be disposable as a consumable because it is contaminated with vapor deposition, and low cost is required. However, there is also a problem that frame welding increases the cost.
[0006]
Further, Japanese Patent Application Laid-Open No. H10-223134 discloses a method in which a mask is attached to the surface of a glass substrate by attaching a weight below the glass substrate so as to extend the mask in the surface direction. The state where the mask is arranged horizontally is illustrated. However, in such a method, when the film formation surface (that is, the glass substrate) becomes large, an excessive tension is applied to the mask in order to sufficiently secure the planarity of the mask having a large area. Need to be added. For this reason, there arises a problem that the mask is easily deformed by the tension.
[0007]
Therefore, the present invention provides a highly accurate placement of a thinned and even large-area mask on a substrate surface without using frame welding, which increases costs, and without causing mask deformation. It is an object of the present invention to provide a pattern film forming method capable of forming a good pattern film.
[0008]
[Means for Solving the Problems]
The present invention for achieving such an object is a pattern film forming apparatus used when forming a pattern on one main surface of a substrate using a mask having an opening pattern, and a substrate for vertically holding the substrate. There is provided a holding means, and a mask holding means for disposing the mask on one main surface side of the substrate held by the substrate holding means while applying a vertical tension to the mask. Still further, a substrate held by the substrate holding unit, a position detecting unit that detects a positional relationship between the mask held by the mask holding unit, and a substrate and the mask based on the positional relationship detected by the position detecting unit. Is provided with an alignment means for moving the substrate holding means and the mask holding means so as to have a predetermined positional relationship.
[0009]
Such a pattern deposition apparatus is provided with a mask holding means for vertically disposing a mask on one main surface side of a vertically held substrate while applying a tension in a vertical direction. Therefore, a mask whose flatness is deteriorated due to “distortion” or “undulation” caused by thinning is arranged to be opposed to one main surface side of the substrate in a state where the flatness is well corrected. Further, this apparatus is provided with a detection unit for detecting the positional relationship between the substrate held by the substrate holding unit and the mask held by the above-described mask holding unit. The positional relationship between the mask and the substrate disposed opposite thereto is detected, and based on this, the relative positional relationship between the mask and the substrate is corrected. Therefore, even for a mask whose planarity has deteriorated due to thinning, it is possible to perform alignment in a state where the planarity has been corrected without reinforcing the frame by fixing the frame to the mask. In addition, since the substrate and the mask are arranged vertically, even for a large-area mask, it is sufficient to apply a minimum tension to correct the flatness, and it is possible to suppress the deformation of the mask due to this tension. It is possible.
[0010]
The present invention is also a pattern film forming method, and is characterized in that the method is performed in the following procedure. First, in a state where a mask to which a tension in the vertical direction is applied is arranged facing one principal surface of a vertically arranged substrate, the substrate and the mask are aligned. Next, while keeping the aligned state, the substrate and the mask are closely fixed. After that, a film formation gas is supplied to the substrate on which the mask is tightly fixed, and a film pattern is formed on one main surface side of the substrate.
[0011]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of a pattern film forming apparatus and a pattern film forming method of the present invention will be described.
[0012]
<First embodiment>
FIG. 1 is a schematic configuration diagram showing the overall configuration of an OVPD (Organic Vapor Phase Phase Deposition) apparatus to which the pattern deposition apparatus of the present invention is applied, and FIG. FIG. 2 is a configuration diagram for describing a main configuration of the device. First, a configuration of a main part of the pattern deposition apparatus will be described with reference to FIG.
[0013]
As shown in FIG. 2, a main part of this pattern film forming apparatus includes a substrate holding means 3 for holding a substrate W, a mask holding means 5 for holding a mask M, and a positional relationship between the substrate W and the mask M. And the alignment means 9 for correcting the positional relationship between the substrate W and the mask M.
[0014]
The substrate holding means 3 has a substrate support surface 3a capable of vertically holding the substrate W. The substrate holding means 3 includes a driving unit 3b that can move the held substrate W in the x, y, and θ directions on one main surface thereof, and further in the z direction that is the thickness direction of the substrate W.
[0015]
An electromagnet as, for example, magnetic control means 4 is provided on the back side of the substrate supporting surface 3a of the substrate holding means 3 so that magnetic force can be generated and controlled on the substrate holding surface 11a side. And The magnetic control means 4 is not limited to an electromagnet whose ON / OFF and magnetic force can be adjusted. The magnetic holding means 3 can be adjusted so that the distance between the magnetic control means 4 and the substrate support surface 3a can be freely adjusted. It may be configured to move within.
[0016]
Further, it is preferable that the substrate holding means 3 is made of a metal having high thermal conductivity, so that the heat of the held substrate W is quickly discharged to the outside. Although not shown here, it is assumed that a cooling mechanism for cooling the substrate W held on the substrate support surface 3a is provided. The cooling mechanism may cool the substrate W by, for example, circulating a coolant on the back surface of the substrate support surface 3a. The cooling mechanism is disposed on the back surface side of the substrate support surface 3a via the magnetic control unit 4. Alternatively, the magnetic control means 4 and the cooling mechanism may be arranged in a mixed manner with respect to the substrate support surface 3a in plan view.
[0017]
Then, the mask holding means 5 is arranged such that the mask M is opposed to one main surface Wa of the substrate W held by the substrate holding means 3 in a state where a vertical tension is applied to the mask M. The mask holding means 5 includes a hanging member 5a for holding the edge of the mask M to suspend the mask M, and a weight 5b attached to the lower end of the suspended mask M, and acts on the weight 5b. A vertical tension is applied to the mask M by gravity. For example, in the illustrated example, the hanging member 5a and the weight 5b are in a clamp shape in which the edge of the mask M is clamped by a plate-shaped member, and is fixed to the mask M with screws.
[0018]
The suspending member 5a and the weight 5b are not limited to such a configuration as long as the vertical tension is applied to the entire surface of the mask M. For example, as shown in FIG. 3, the weight 5b may be formed in two cylindrical shapes, the mask M may be held therebetween, and the weight 5b may be in line contact with the mask M. This suppresses the influence of the flatness of the surface of the weight 5b on the flatness of the mask M. Further, as shown in FIG. 4, if the hanging member 5a and the weight 5b are in point contact with the mask M, the influence of the flatness of the surface of the weight 5b on the flatness of the mask M can be completely reduced. Can be ignored. In this case, when a plurality of hanging points of the mask M by the hanging member 5a and a plurality of hanging points of the weight 5b on the mask M are provided, the upper and lower hanging points are vertically set in a state where the mask M is suspended. It is preferable that they are shifted.
[0019]
Here, returning to FIG. 2 again, it is preferable that the hanging member 5a and the weight 5b are provided with a Peltier element as a cooling mechanism for cooling the mask M held thereon.
[0020]
Here, for example, at the time of pattern formation described later, the film formation gas is N₂Assuming that the carrier gas is supplied to the mask M at 10 slm (standard @ liter / minutes: flow rate per minute in a standard state), the amount of heat c supplied to the mask M is c = (film forming gas density ρ × Deposition gas flow rate V × Deposition gas specific heat C₀× film formation gas temperature). Therefore, the following values are substituted into the above equation.
● Deformation gas density is N₂Ρ = 1.25kg / m as density³
● Deposition gas flow rate V = 0.01m³/ Min
● Specific heat of deposition gas is N₂C as representative of specific heat₀= 1.034kJ / kkg
● Deposition gas temperature = 300 ℃
As a result, the heat amount c supplied to the mask M is c = 3.8755 kJ / min = 64.6 W. For this reason, in order to prevent the thermal expansion of the mask M during film formation, a Peltier element having a cooling capacity equal to or greater than this may be provided, and for example, two 33 W elements may be used.
[0021]
Further, the weight 5b may be made of a magnetic material. In this case, below the mask holding means 5, a magnetic control means 6 (for example, an electromagnet) capable of adjusting the magnetic force between the weight 5b and the weight 5b is provided. It is assumed that the magnetic control means 6 is disposed immediately below the suspension member 5a in the mask holding means 5.
[0022]
The position detecting means 7 is for detecting the positional relationship between the substrate W held by the substrate holding means 3 and the mask M held by the mask holding means 5, and is connected to, for example, a CCD camera 7a. Calculation unit 7b. The CCD camera 7a is arranged such that an image obtained by superimposing the mask M and the substrate W held by the substrate holding unit 3 is captured from the mask M held by the mask holding unit 5. The arithmetic unit 7b also moves the CCD camera 7a to the position where the alignment mark is formed on the mask M and the substrate W, and calculates the position of the substrate W with respect to the mask M from the position of the CCD camera 7a and the superimposed image of the alignment mark. Calculate the displacement.
[0023]
Then, based on the positional relation detected by the position detecting means 7, the alignment means 9 adjusts the movement values of the substrate holding means 3 in the x, y, and θ directions so that the substrate W and the mask M have a predetermined positional relation. And a control unit 9a that controls the driving of the substrate holding unit 3 by the driving unit 3b provided on the substrate holding unit 3 based on the calculated value. Therefore, the control unit 9a and the driving unit 3b of the substrate holding unit 3 constitute the alignment unit 9.
[0024]
Note that the alignment means 9 only needs to be able to correct the relative positional relationship between the substrate W held by the substrate holding means 3 and the mask M held by the mask holding means 5. Therefore, any configuration may be used as long as at least one of the substrate holding unit 3 and the mask holding unit 5 is moved based on the positional relationship detected by the position detecting unit 7. However, in the case of a configuration in which the mask holding means 5 is moved, the hanging member 5a of the mask holding means 5 is provided with a drive unit capable of moving the hanging means 5 in the x, y, θ directions and, if necessary, the z direction. And that.
[0025]
Next, an overall configuration of a pattern film forming apparatus in which the above-described main components are arranged will be described with reference to FIG.
[0026]
The pattern film forming apparatus 1 includes an alignment film forming chamber 11 in which a pattern is formed on a substrate W. The alignment film forming chamber 11 is provided with an exhaust system not shown here, and the inside thereof is controlled to a predetermined pressure. In the alignment film forming chamber 11, the above-described mask holding means 5, magnetic control means 6, and CCD camera 7a of the position detecting means 7 are arranged.
[0027]
A substrate exchange chamber 15 is connected to the alignment film forming chamber 11 via a gate valve 13. The substrate exchange chamber 15 is also provided with an exhaust system not shown here, and the inside is controlled to a predetermined pressure. The substrate holding means 3 described above is arranged in the substrate exchange chamber 15. It is assumed that the substrate holding means 3 can move back and forth between the inside of the substrate exchange chamber 15 and the inside of the alignment film forming chamber 11 by, for example, movement in the z direction.
[0028]
Further, the pattern film forming apparatus 1 is provided with a gas supply unit 20 for supplying a film forming gas into the alignment film forming chamber 11. The gas supply means 20 has a plurality of supply pipe lines 21, and these supply ends are inserted into the alignment film formation chamber 11. It is assumed that the supply end of the supply pipe line 21 is arranged such that the film forming gas is evenly sprayed on each part of the surface of the mask M held by the mask holding means 5. Note that each supply pipe line 21 is provided with a flow rate adjusting mechanism 21a, respectively, so that the supply amount (spray amount) of the film forming gas to each part of the surface of the mask M is adjusted. .
[0029]
The other ends of these supply pipe lines 21 are inserted into a raw material container 23 in which film forming raw materials are stored. A supply pipe 27 connected to a gas cylinder serving as carrier gas supply means 25 is inserted into the raw material container 23. The supply pipe 27 is provided with a valve 27a, so that the carrier gas can be freely supplied into the raw material container 23. Various materials such as an organic material and an inorganic material are stored in the raw material container 23 in accordance with a material for forming a pattern.
[0030]
In the pattern film forming apparatus 1 having such a configuration, the heating mechanism 29 is disposed, whereby the temperature of the raw material container 23 and the supply pipe line 21 is controlled to a predetermined high temperature (100 ° C. to 400 ° C.). As a result, the film-forming material (organic material) heated and vaporized (sublimated) in the material container 23 is maintained in a heated state together with the carrier gas introduced from the supply pipe 27 (that is, the gas state is maintained). ) It is configured to be supplied into the alignment film forming chamber 11.
[0031]
Next, an embodiment of a pattern film forming method using the above-described pattern film forming apparatus 1 will be described based on FIG. 5 and with reference to FIGS.
[0032]
First, as shown in FIG. 5A, a weight 5b is fixed to an end of the mask M. At this time, a screw hole h for fixing with the screw 5b 'is formed in the mask M in advance so that the weight M can be easily fixed to the mask M. It is needless to say that after screwing, 5b 'becomes part of the weight 5b.
[0033]
Next, as shown in FIG. 5 (2), the other end of the mask M to which the weight 5b is fixed is fixed to the hanging member 5a installed in the alignment film forming chamber 11 (see FIG. 1) of the pattern film forming apparatus. I do. As a result, the mask M to which the tension in the vertical direction is applied is set in the pattern film forming apparatus. In this manner, with the mask M suspended in the alignment film forming chamber 11, the gate valve 13 is closed and the inside of the alignment film forming chamber 11 is evacuated to a predetermined reduced pressure state.
[0034]
On the other hand, as shown in FIG. 5C, the substrate W is fixedly held on the substrate supporting surface 3a of the substrate holding means 3. This operation is performed in the substrate exchange chamber 15 of the pattern deposition apparatus (see FIG. 1). Then, the cooling mechanism provided in the substrate holding means 3 cools and holds the held substrate W to about room temperature and exhausts the inside of the substrate exchange chamber 15.
[0035]
Thereafter, when the pressure in the substrate exchange chamber 15 decreases to a level substantially equal to the pressure in the alignment film forming chamber 11, the gate valve 13 is opened (see FIG. 1). Then, as shown in FIG. 5D, the substrate holding unit 3 is moved from the substrate exchange chamber 15 to the alignment film forming chamber 11 by driving the substrate holding unit 3 in the z direction (see FIG. 1). Then, the mask M held by the mask holding means 5 is arranged on one main surface Wa side of the substrate W so as to face at a predetermined interval. If necessary, a magnetic force is generated between the weight 5b and the magnetic control means 6 by the magnetic control means 6 disposed below the mask holding means 5, and the insufficient tension is applied to the weight 5b by the magnetic force. Then, the flatness of the mask M is ensured.
[0036]
In this state, the CCD camera 7a is moved to a position where an alignment mark is formed between the substrate W and the mask M, and an image of the alignment mark formed on each part of the substrate W and the mask M is captured by the CCD camera 7a. Here, an alignment pattern having an opening shape is formed on the mask M, and an alignment pattern having an uneven shape is formed on one main surface Wa of the substrate W at a position corresponding to the alignment pattern formation position of the mask M. And that. Therefore, the CCD camera 7a takes an image of the state in which the alignment pattern of the mask M and the alignment pattern of the substrate W are superimposed, and the arithmetic unit 7b detects the positional relationship of the superposition.
[0037]
Then, the substrate holding means 3 is moved in the x, y, and θ directions based on the detected superimposed state, and the mask M and the substrate W are positioned so as to be in a predetermined overlapping state.
[0038]
At this time, when the hanging portion 5a (see FIG. 2) of the mask holding means 5 is moved in the x, y, and θ directions to perform the alignment, the mask M is shaken by the driving of the hanging portion 5a. In order to suppress damage to the one principal surface Wa side of the substrate W, rough alignment is performed with the substrate W and the mask M once separated from each other, and the mask M and the substrate W are again brought close to each other to increase the height. It is desirable to perform accurate positioning. However, when changing the distance between the substrate W and the mask M, the generation of the magnetic force in the magnetic control means 6 is performed in an OFF state. The swing of the mask M due to the driving of the hanging portion 5a is minimized if the magnetic force is generated between the weight 5b and the magnetic control means 6 by the magnetic control means 6 disposed below the mask holding means 5. As a result, the alignment can be performed in one step.
[0039]
After the mask M and the substrate W are aligned as described above, the substrate holding means 3 is slowly moved in the z direction (see FIG. 2) as shown in FIG. The substrate W is brought into contact with the mask M held by the means 5. At this time, it is preferable that the mask M is slightly pressed by the substrate W. Then, in this state, the magnetic control means 4 (see FIG. 2) provided inside the substrate holding means 3 is turned on. As a result, a magnetic force is generated between the mask M and the magnetic control means 4, and the mask M is brought into close contact with one main surface of the substrate W by the magnetic force. If the magnetic control means 4 is configured to move within the substrate holding means 3 so that the distance between the magnetic control means 4 and the substrate supporting surface 3a can be freely adjusted, after the substrate W comes into contact with the mask M, By bringing the control means 4 close to the substrate supporting surface 3a, a magnetic force is generated between the mask M and the magnetic control means 4, and the mask M is brought into close contact with one main surface of the substrate W by the magnetic force. I do.
[0040]
As described above, when the hanging portion 5a (see FIG. 2) of the mask holding means 5 is moved in the x, y, and θ directions when the mask M and the substrate W are aligned, the hanging is performed. Since the mask M is shaken by the driving of the portion 5a, in order to prevent damage to one main surface Wa of the substrate W, a step of bringing the mask M into close contact with the substrate W is performed after the mask M is stopped. When the magnetic control means 6 is disposed immediately below the mask holding means 5, the mask M comes to a still state more quickly by the magnetic force acting between the magnetic control means 6 and the weight 5b.
[0041]
In such a state, the film forming gas G is supplied from each supply pipe line 21 of the pattern film forming apparatus (see FIG. 1), and the film forming gas G is rapidly cooled on one main surface Wa of the substrate W. A film pattern is formed. At this time, the supply state of the film forming gas G to one main surface side of the substrate W is made uniform by rotating or sliding the substrate holding means 3 with respect to the supply pipe line 21. You may do it. In this case, the hanging member of the mask holding means 5 is driven in accordance with the driving of the substrate holding means 3.
[0042]
When the above-described pattern formation method is applied to the formation of an organic film or an electrode film in the production of an organic EL display for full-color display, the steps described with reference to FIGS. 5 (1) to 5 (5) are performed. It is repeated three times for each of the RGB colors.
[0043]
In the pattern film forming apparatus and the pattern film forming method using the same described above, the mask M is hung and the tension is applied in the vertical direction by the weight 5b. Even if the mask M has deteriorated flatness, its planarity can be satisfactorily corrected. Then, the positional relationship between the substrate W held by the substrate holding unit 3 and the mask M whose planarity has been well corrected in this way is detected by the detecting unit 7, and the mask M and the mask M are determined based on the detected positional relationship. The relative positional relationship with the substrate W is corrected.
[0044]
Therefore, even in the case of the mask M whose planarity has been degraded due to the thinning, alignment can be performed in a state where the planarity has been corrected without applying reinforcement such as fixing a frame to the mask M. Moreover, since the substrate W and the mask M are arranged vertically, it is not necessary to consider the bending caused by arranging them horizontally, and even if the mask M has a large area, the flatness of the mask M is corrected. It is only necessary to apply the minimum tension to. For this reason, it is also possible to suppress the deformation of the mask M due to this tension.
[0045]
As a result, the thinner and larger-area mask M is positioned with high precision on one main surface Wa of the substrate W, and a pattern can be formed with good positional precision.
[0046]
Further, by providing the magnetic control means 4 on the substrate support surface 3a side, it becomes possible to bring the mask M into close contact with the substrate W side by magnetic force. For this reason, partial “floating” between the mask M and the substrate W is prevented, and the positional accuracy of the formed film pattern can be ensured.
[0047]
In addition, in the above-described pattern film forming apparatus, when the mask holding means 5 is provided with a cooling mechanism, the mask M can be kept in a cooled state even when the heated film forming gas G is supplied to the mask M. Since this is possible, it is possible to prevent the mask M from being thermally expanded and being displaced from the substrate W in a cooled state. Accordingly, it is possible to prevent the displacement between the mask M and the substrate W during the film formation, and to secure the positional accuracy of the formed film pattern.
[0048]
By providing the magnetic control means 6 under the mask holding means 5, it becomes possible to apply a magnetic force between the weight 5a and the magnetic control means 6, so that the mask M can be prevented from swinging during alignment. Can be. Thereby, alignment accuracy can be ensured. Moreover, the vertical tension applied to the mask M can be adjusted by adjusting the magnetic force. For this reason, it is possible to set the weight 5b lighter and to compensate for the shortage by magnetic force, so that the versatility of the weight 5b can be ensured with respect to the mask M of various forms, and the weight 5b can be applied to the mask M. Excessive tension can be prevented from being applied.
[0049]
<Second embodiment>
FIG. 6 shows another configuration example of a main part of the pattern film forming apparatus. The main part of the pattern film forming apparatus shown in this figure is different from the main part of the pattern film forming apparatus described with reference to FIG. 2 in that the structure of the substrate holding means 30 and the structure separately from the substrate holding means 30 are different. The point is that the film stage 32 is provided. The other configurations, that is, the mask holding unit 5, the magnetic control unit 6, the position detection unit 7, and the alignment unit 9 have the same configuration.
[0050]
That is, the substrate holding means 30 is configured to hold one main surface Wa of the substrate W vertically by clamping and hanging the end of the substrate W. The substrate holding means 30 is also provided with a driving unit 30a which can move the held substrate W in the x, y, and θ directions on one main surface thereof and further in the z direction which is the thickness direction of the substrate W.
[0051]
The film forming stage 32 includes a substrate support surface 32a that is disposed to face the other main surface Wb of the substrate W held by the substrate holding means 30 and that points the substrate W vertically from the other main surface. I have. The film forming stage 32 is configured to be movable on the substrate support surface 32a in the z direction toward the other main surface Wb of the substrate W held by the substrate holding means 30. The magnetic control means 4 is provided on the back side of the substrate support surface 32a of the film forming stage 32, and the magnetic force can be freely generated on the substrate support surface 32a side. The film forming stage 32 is made of the same material as the substrate holding means (3) described with reference to FIG. 2 in the first embodiment, and is provided with the same cooling mechanism.
[0052]
Although illustration is omitted here, in a pattern film forming apparatus having a main part having such a configuration, for example, a substrate holding unit is disposed between the substrate exchange chamber 15 and the alignment film forming chamber 11 in FIG. 30 and the film forming stage 32 are arranged movably.
[0053]
Even with a pattern film forming apparatus having such a main part, it is possible to form a pattern film in the same procedure as described in the first embodiment. In this case, the substrate holding unit 3 is replaced with the substrate holding unit 30 in the pattern film forming process described with reference to FIG. However, after the alignment between the mask M and the substrate W is completed in the step described with reference to FIG. 5D, before starting the pattern deposition in the step described with reference to FIG. Referring to FIG. 6, the substrate W and the mask M are brought into close contact with each other as follows.
[0054]
First, the substrate holding means 30 is further moved in the z direction to bring the substrate W into contact with the mask M held by the mask holding means 5, and the film formation stage 32 is moved in the z direction to move the substrate W. The substrate support surface 32a is brought into contact with the other main surface Wb. Then, in this state, the magnetic control means 4 provided inside the film forming stage 32 is turned on. As a result, a magnetic force is generated between the mask M and the magnetic control means 4, and the mask M is brought into close contact with one main surface of the substrate W by the magnetic force.
[0055]
Even in the pattern film forming apparatus and the pattern film forming method according to the second embodiment described above, the mask M and the substrate W are aligned with the mask M suspended and the tension is applied by the weight 5b. . For this reason, as in the first embodiment, the thinner and larger-area mask M is highly accurately aligned with respect to one main surface Wa of the substrate W, and a pattern is formed with good positional accuracy. Becomes possible.
[0056]
Further, by providing the magnetic control means 4 on the substrate support surface 32a side of the film forming stage 32, it is possible to bring the mask M into close contact with the substrate W side by magnetic force, and a portion between the mask M and the substrate W is provided. It is possible to prevent a typical "floating" and secure the positional accuracy of the formed film pattern.
[0057]
In each of the first and second embodiments described above, the case where the present invention is applied to the OVPD apparatus and the OVPD method has been described. However, the pattern film forming apparatus and the pattern film forming method of the present invention are not limited to the application to the OVPD apparatus and the OVPD method, but may be applied to, for example, a vacuum deposition method. In this case, directivity is given to the supply direction of the raw material vapor generated from the crucible of the vapor deposition raw material (that is, the film forming gas) so that the raw material gas is supplied to the vertically arranged substrate W and mask M. It is preferable to use a raw material container. Further, by using such a raw material container, a raw material vapor is supplied to a vertically arranged substrate from a predetermined angle (20 ° to 60 °), and a rotating motion is given to a rotating raw material container (a raw material vapor supply direction). It is preferable to improve the pixel film thickness distribution. This can prevent the displacement of the mask when the substrate and the mask are rotated.
[0058]
【The invention's effect】
As described above, according to the present invention, the configuration in which the substrate and the mask are aligned in a state in which the mask to which tension is applied in the vertical direction is opposed to one main surface of the substrate is used, thereby reducing the thickness of the substrate. Even if the mask has warped or undulated and the flatness is deteriorated, the relative flatness between the mask and the substrate can be maintained in a state where the flatness of the mask is properly corrected by applying the minimum tension. It becomes possible to correct the positional relationship. Therefore, a mask thinned to the substrate surface can be precisely formed without using frame welding, which increases costs, and in a state in which excessive tension is applied to a large-area mask to prevent it from being deformed. It is possible to perform pattern formation with good positional accuracy by disposing them.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing an example of an overall configuration of a pattern film forming apparatus to which the present invention is applied.
FIG. 2 is a configuration diagram for explaining a main configuration of the pattern deposition apparatus of the first embodiment.
FIG. 3 is a cross-sectional view showing an example of a weight constituting the mask holding means.
FIG. 4 is a diagram illustrating an example of a configuration of a mask holding unit.
FIG. 5 is a view for explaining a pattern film forming method using the pattern film forming apparatus of the present invention.
FIG. 6 is a configuration diagram for explaining a main configuration of a pattern film forming apparatus according to a second embodiment.
[Explanation of symbols]
3, 30: substrate holding means, 3a, 32a: substrate support surface, 3b, 30b, (9): driving means (alignment means), 4, 6: magnetic control means, 5: mask holding means, 5a: hanging member 5b: weight, 7: position detection means, 9a, (9): control means (alignment means), G: film forming gas, W: substrate, Wa: one main surface, Wb: other main surface

Claims (9)

A pattern film forming apparatus used when performing pattern film formation on one main surface of a substrate using a mask having an opening pattern,
Substrate holding means for holding the substrate vertically,
Mask holding means for disposing the mask on one main surface side of the substrate held by the substrate holding means in a state in which a vertical tension is applied to the mask,
Position detection means for detecting the positional relationship between the substrate held by the substrate holding means and the mask held by the mask holding means,
An alignment unit for moving at least one of the substrate holding unit and the mask holding unit such that the substrate and the mask have a predetermined positional relationship based on the positional relationship detected by the position detecting unit. A pattern film forming apparatus characterized by the above-mentioned. The pattern film forming apparatus according to claim 1,
The mask holding means,
A hanging member that holds the edge of the mask and suspends the mask,
And a weight attached to a lower end of the mask suspended by the suspension member. The pattern film forming apparatus according to claim 2,
The pattern deposition apparatus, wherein the hanging member and the weight have a cooling mechanism for cooling a mask held by the hanging member and the weight. The pattern film forming apparatus according to claim 2,
The weight is made of a magnetic material,
A pattern forming apparatus, wherein magnetic control means for generating a magnetic force in a controllable manner with the weight is provided below the hanging member. The pattern film forming apparatus according to claim 1,
The mask is made of a magnetic material,
It has a substrate support surface that is in contact with a mask held by the mask holding means via the substrate held by the substrate holding means, and generates a controllable magnetic force between the substrate support surface and the mask. A pattern forming apparatus characterized by comprising a magnetic control means for causing the pattern to be formed. A method for forming a pattern on one main surface of a substrate using a mask having an opening pattern,
A step of aligning the substrate and the mask in a state where the mask to which the tension in the vertical direction is applied is arranged facing one principal surface side of the vertically arranged substrate,
A step of closely fixing the substrate and the mask while maintaining the aligned state,
Supplying a film-forming gas to the substrate to which the mask is fixedly adhered, and forming a film pattern on one main surface side of the substrate. The pattern forming method according to claim 6,
In the step of performing the alignment, the mask is suspended so as to face one principal surface of the substrate with a weight added to a lower end thereof. The pattern deposition method according to claim 7,
A pattern film forming method, wherein the weight is formed of a magnetic material, and a magnetic force is applied to the weight from below to control a tension applied to the mask. The pattern forming method according to claim 6,
In the step of closely fixing the substrate and the mask,
In a state where the mask is in contact with one main surface of the substrate, a magnetic force is generated between the magnetic control means disposed on the other main surface side of the substrate and the mask made of a magnetic material, so that the mask is formed. A pattern film forming method, wherein the pattern is formed in close contact with one main surface of a substrate.

Images