JP2004026588A - Dielectric porcelain composition - Google Patents
Dielectric porcelain composition Download PDFInfo
- Publication number
- JP2004026588A JP2004026588A JP2002186627A JP2002186627A JP2004026588A JP 2004026588 A JP2004026588 A JP 2004026588A JP 2002186627 A JP2002186627 A JP 2002186627A JP 2002186627 A JP2002186627 A JP 2002186627A JP 2004026588 A JP2004026588 A JP 2004026588A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- sample
- glass
- temperature
- tio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 65
- 229910052573 porcelain Inorganic materials 0.000 title claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 36
- 238000010304 firing Methods 0.000 claims abstract description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 claims description 23
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 22
- 238000005245 sintering Methods 0.000 claims description 19
- 239000000843 powder Substances 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011812 mixed powder Substances 0.000 description 5
- 229910005793 GeO 2 Inorganic materials 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000007721 mold pressing method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Images
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、誘電体磁器組成物に係り、特に、誘電体の高周波特性が優れ、且つ低温焼成が可能な誘電体磁器組成物に関する。
【0002】
【従来の技術】
近年、携帯電話に代表される移動体通信機器は小型化、軽量化が進んでいて、使用される部品にも小型・軽量化が求められている。例えば、マイクロ波用セラミックフィルタは、セラミック磁器組成物のグリーンシートに例えば銀(Ag)材料を印刷し、これらのシートを重ね合わせ、焼成することで積層フィルタ等の積層型部品が製造される。この場合の焼成は、銀(Ag)が溶け出さない温度(900℃前後が望ましい)で、銀(Ag)とセラミック磁器組成物を同時に焼結させることが好ましい。
【0003】
マイクロ波用セラミックフィルタのチップ素地には、BaO−TiO2系組成の誘電体磁器組成物が好適であり、その特性は比誘電率が30〜40と高く、共振周波数(ここでは以下、測定周波数)の温度係数も小さいので有用であることが知られている。しかし、この組成物は、その焼成温度が約1300℃と高温であり、これより低い温度では焼結せず誘電体特性も著しく低下する。
【0004】
適当な焼結助剤を用いて、900℃前後の温度でBaO−TiO2系組成物の焼結を試みた場合、この温度での良好な焼結は難しく、焼結したとしても誘電体磁器組成物の誘電体特性が大きく変化するため、高周波帯域において優れた高誘電率、高Qの特性が得られなくなってしまう。
【0005】
一般的に誘電体磁器組成物を低温で焼成するために、焼結助剤としてホウケイ酸ガラスを用いることが知られている。このガラスを用いてBaO−TiO2系組成物を930℃で焼成した5件の試料のデータを表2に示す。ホウケイ酸ガラスを焼結助剤として用いた焼成では、表2のデータが示すように、BaO−TiO2系組成物を銀(Ag)の融点以下の温度で良好に焼結させることは困難である。従って、一般的に知られた焼結助剤を用いた方法では、銀(Ag)と同時焼成でき、例えばマイクロ波用セラミックフィルタが必要とする誘電体特性を十分に満足する誘電体磁器組成物を作り出せないという問題があった。
【0006】
【発明が解決しようとする課題】
本発明は上述した事情に鑑みて為されたもので、良好な誘電体特性を有すると共に、比較的低温で銀電極などと同時に焼成が可能で緻密な焼結体が得られる誘電体磁器組成物を提供することを目的とする。
【0007】
【課題を解決するための手段】
以上の課題を解決するために、本発明の誘電体磁器組成物は、一般式αBaO・(1−α)TiO2(αは、モル比で、0.12≦α≦0.24)で表される組成物を主成分とする材料100重量部に対して、GeO2を含むガラスをx重量部(10≦x≦17.5)と、B2O3をy重量部(3.0≦y≦7.5)添加して焼成したことを特徴とする。
【0008】
前記ガラスは、組成式=aGeO2−bBaO−cBi2O3で表され、ここに、a,b,cは、モル比で、0.4≦a≦0.6、0.1≦b≦0.5、0.1≦c≦0.5、但し、a+b+c=1の範囲内にあることを特徴とする。
【0009】
本発明者は、誘電体材料(BaO−TiO2系組成物)に少量の添加で焼成を促進させることのできるガラスを開発し、それとB2O3を併用することで、銀(Ag)の融点未満の温度で焼成して、良好な焼結体が得られることを知得した。即ち、この誘電体磁器組成物の焼結体は、比誘電率εr=32〜46、Q=191〜993(測定周波数=6.0〜8.0GHZにおいて)の特性を有するとともに、吸水率0.1%未満の緻密な構造が得られる。この緻密な構造により、セラミックの強度が向上し、比誘電率εr、Q値等の誘電体特性のバラツキが減少して安定化する。また、誘電体磁器組成物と銀(Ag)電極を同時焼成できることにより、製造工程の短縮と製造コストの削減ができるという製造上のメリットがある。
【0010】
【発明の実施の形態】
以下、本発明に係る誘電体磁器組成物の実施形態について、表1、図1乃至図5を参照してさらに詳しく説明する。
【0011】
表1は、34件の試料についての組成と諸特性のデータをまとめたものである。試料の作製に当たり、ガラスとB2O3の添加率を変えること、ガラスの組成を変えること、焼結助剤としてガラスとB2O3の添加の有無、焼結温度などを変えている。ガラスの組成については、図1に示される。
【0012】
[実施例]
本発明の出発原料としてBaCO3粉末とTiO2粉末を用い、表1の組成になるように所定量の秤量をする。この秤量原料をボールミルで18時間湿式混合した後、乾燥させて混合粉を得る。この混合粉を大気中において焼結助剤なしでBaO−TiO2系化合物を生成するような高温(例えば1250℃)にて焼成する。その後、ボールミルで24時間湿式粉砕して平均粒径0.5μmのBaO−TiO2組成物粉末を得る。図4にこの粒径分布データを示す。図3に示すX線回折パターンにより、BaO−TiO2系組成物であることを確認できる。なお、上記混合時間、高温焼成温度、平均粒径等は一例であり、X線回折パターンにより、組成物がBaO−TiO2系組成物であることを確認できれば十分である。
【0013】
次に、Geを含むガラスを作製した。出発原料にGeO2粉末とBaCO3粉末とBi2O3 粉末を用い、表1に示した試料組成になるように秤量する。この秤量原料を乳鉢・乳棒で10分間乾式混合する。混合した粉末をアルミナ質るつぼに入れ、1000℃の炉内で溶融させる。30分後、炉からるつぼを取り出し、室内で放冷してガラスを固化させる。るつぼからガラスを取り出し、自動乳鉢機で粗粉砕する。粗粉砕したガラス粉末をボールミルで湿式粉砕して平均粒径1μmのガラス粉末を得る(図5を参照)。図2に示すように、X線回折パターンにより、粉末が非晶質ガラスであることを確認できる。なお、この実施例ではガラスは溶融後室温で放冷して作製しているが、一般的な急冷水砕法、急冷ロール法等を用いるようにしても当然よい。いずれの方法でも、X線回折パターンにより、粉末が非晶質ガラスであることを確認できればよい。
【0014】
表1の組成になるように、所定成分のBaO−TiO2組成物に対して、ガラス粉末とB2O3を秤量する(B2O3は、H3BO3で秤量する)。それをボールミルで湿式混合した後、乾燥させて混合粉を得る。この混合粉にPVA水溶液を添加して造粒する。この造粒粉を金型に詰めて、一軸加圧で仮成形する。さらにその成形体に対して静水圧プレス機を使って等方加圧し成形する。その成形体を大気中において、銀(Ag)の融点(=961.93℃)未満の表1に示す低温焼成温度で、2時間焼成して焼結体を得た。なお、この実施例では粉末金型プレス法と静水圧プレス法を組み合わせて試料を作製しているが、他の成形方法、例えばグリーンシート法、鋳込み法(キャスティング法)、押し出し法等を用いるようにしてもよい。
【0015】
表1の各温度で2時間焼成した試料No.1〜試料No.31を直径9mm、高さ4.5mmに加工した。その後、マイクロ波用ファインセラミックの誘電特性の試験方法(JISR1627)に規定された両端短絡形誘電体共振器法で得られた焼結体の比誘電率εrとQを測定した。その測定データを表1に示す。なお同様の方法にて、試料No.32〜試料No.34の測定も行った。
【0016】
表1の試料No.1〜試料No.31の吸水率を、電気絶縁用セラミック材料試験方法(JISC2141)に規定された方法により求めた。吸水率が0.1%未満のものは、焼結が十分されているものと判断した。なお同様の方法にて、試料No.32〜試料No.34の測定も行った。
【0017】
表1の34件のうちの試料11件、即ち、試料No.3〜No.4、試料No.9〜No.10、試料No.12、試料No.16〜No.19、試料No.21、試料No.26は、α,a,b,c,x,yの値が本発明の好ましい組成の範囲内にある。即ち、一般式αBaO・(1−α)TiO2(0.12≦α≦0.24モル)で表される組成物を主成分とする材料100重量部に対して、GeO2を含むガラスをx重量部(10.0≦x≦17.5)、B2O3をy重量部(3.0≦y≦7.5)混合して焼成したもので、前記ガラスは、組成式=aGeO2−bBaO−cBi2O3で表され、ここに、a,b,cは、モル比で、0.4≦a≦0.6、0.1≦b≦0.5、0.1≦c≦0.5、但し、a+b+c=1の範囲内にある。
【0018】
試料No.3〜No.4、試料No.9〜No.10、試料No.12、試料No.21、試料No.26は、低温焼成温度が900℃であり、試料No.16〜No.19は、低温焼成温度が870℃である。これら試料11件については、低温焼成温度870〜900℃の範囲で、吸水率が0.1%未満で緻密な構造を有する誘電体磁器組成物が得られている。比誘電率εrについて、試料No.21が最高値(εr=46)を有し、試料No.10と試料No.12と試料No.16と試料No.19が最低値(εr=32)を有している。Q値については、試料No.16が最高値(Q=993[測定周波数=8GHzにおいて])を有し、試料No.9が最低値(Q=518[測定周波数=7〜8GHZにおいて])を有している。上述したように試料11件については、表1に示されているように焼結性、比誘電率、Qともに良好なデータが得られている。
【0019】
[比較例]
試料No.1は、B2O3の添加率が下限値3.0重量部より少ないので、900℃焼成では焼結が不十分で、構造が緻密化しない誘電体磁器組成物となる。一方、試料No.5と試料No.6と試料No.7は、B2O3の添加率が上限値7.5重量部を超えているので、B2O3の過剰な添加によるものと考えられる発泡現象が確認され、吸水率が高くなった。試料No.8のように、低温焼成温度が870℃より低い場合は、緻密な構造にならず吸水率も0.1%未満とならない。
【0020】
次に、ガラス組成が好ましい組成範囲外にある試料について説明する。試料No.28、試料No.30及び試料No.31は、吸水率が高くなり、緻密化しない。また、試料No.29は、緻密化するがQ<100で、マイクロ波用セラミックフィルタ特性を十分満足するものではない。
【0021】
次に、ガラス組成が好ましい組成範囲内にある、即ち、aGeO2−bBaO−cBi2O3で表され、ここに、a,b,cは、モル比で、0.4≦a≦0.6、0.1≦b≦0.5、0.1≦c≦0.5、但し、a+b+c=1の範囲内にある組成のガラスを用いた試料について説明する。試料No.15は、ガラス添加が10重量部より少ないため吸水率が0.1%未満に緻密化しない。また、試料No.13は、B2O3の添加を15重量部としてガラス添加を2重量部とした試料であるが、緻密化せず軽石のような構造となった。一方、試料No.20のように、ガラス添加が17.5重量部を超えると、過焼結により試料が破損した。
【0022】
一般式αBaO・(1−α)TiO2のαが大きい試料No.23(α>0.24)は、過焼結が発生して破損した。一方、αが小さい試料No.22(α<0.12)は、吸水率<0.1%に緻密化しなかった。
【0023】
次に、ガラス及びB2O3の添加のないBaO−TiO2組成物について記述する。ガラスを添加しないで高温焼成温度=1200℃で焼成したものが試料No.32である。試料No.32は、焼結不十分であり、εr及びQの測定が出来なかった。一方、高温焼成温度=1250℃で焼成したものが試料No.33と試料No.34である。試料No.33と試料No.34は、緻密化してその電気特性としてεr≧38及びQ≧2780が得られている。従って、ガラス添加のないBaO−TiO2組成物を焼結させるには焼成温度≧1250℃が必要である。
【0024】
表1は、34件の試料について組成と諸特性のデータをまとめて示したものである。
【表1】
【0025】
ホウケイ酸ガラスは、焼結助剤として知られている。表2は、このガラスを用いて1250℃の高温焼成にて作製したBaO−TiO2組成物を低温焼成温度930℃で焼成した5件の試料のデータを示したものである。表2に示すように吸水率が高く、焼結不十分のため、誘電体特性は測定不可能であった。
【表2】
【0026】
これまで本発明の一実施形態について説明したが、本発明は上述の実施形態に限定されず、その技術的思想の範囲内において種々異なる形態にて実施されてよいことは言うまでもない。
【0027】
【発明の効果】
本発明によれば、一般式αBaO・(1−α)TiO2(ただし、αはモル比で、0.12≦α≦0.24)で表される組成物を主成分とする材料に対して、焼結促進剤として少量のガラスとB2O3を添加することで、比誘電率εr=32〜46、Q=191〜993(周波数=6.0〜8.0GHZにおいて)の特性を有する緻密な誘電体磁器組成物を銀(Ag)の融点未満の温度で焼成することができる。この緻密な構造により、セラミックの強度が向上し、比誘電率εr、Q値のバラツキが減少して誘電体特性が安定化するという性能面の改良がある。また、誘電体磁器組成物と銀(Ag)電極の同時焼成ができることにより、製造工程の短縮と製造コストの削減が達成できるという製造上のメリットがある。
【図面の簡単な説明】
【図1】本発明のガラスの3元組成図である。
【図2】ガラスが組成式=aGeO2−bBaO−cBi2O3(a=0.567、b=0.243、c=0.189)であることを示すX線回折パターン図である。
【図3】BaO−TiO2組成物[αBaO・(1−α)TiO2;α=0.174]であることを示すX線回折パターン図である。
【図4】BaO−TiO2組成物の粒径データを示す図である。
【図5】GeO2を含むガラスの粒径データを示す図である。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a dielectric porcelain composition, and more particularly to a dielectric porcelain composition having excellent dielectric high-frequency characteristics and capable of being fired at a low temperature.
[0002]
[Prior art]
2. Description of the Related Art In recent years, mobile communication devices typified by mobile phones have been reduced in size and weight, and smaller and lighter components have been required. For example, in a ceramic filter for microwaves, for example, a silver (Ag) material is printed on a green sheet of a ceramic porcelain composition, and these sheets are laminated and fired to produce a laminated component such as a laminated filter. In the firing in this case, it is preferable to simultaneously sinter silver (Ag) and the ceramic porcelain composition at a temperature at which silver (Ag) does not melt (preferably around 900 ° C.).
[0003]
For the chip base of the ceramic filter for microwaves, a dielectric ceramic composition of BaO-TiO 2 composition is preferable, and its characteristic is that its relative dielectric constant is as high as 30 to 40 and its resonance frequency (hereafter, measurement frequency ) Is known to be useful because the temperature coefficient is also small. However, the sintering temperature of this composition is as high as about 1300 ° C., and at a lower temperature, the composition does not sinter and the dielectric properties are significantly reduced.
[0004]
When sintering of a BaO—TiO 2 composition at a temperature of about 900 ° C. using an appropriate sintering aid, good sintering at this temperature is difficult, and even if the sintering is performed, the dielectric ceramic Since the dielectric properties of the composition change significantly, excellent high dielectric constant and high Q characteristics in a high frequency band cannot be obtained.
[0005]
Generally, it is known to use borosilicate glass as a sintering aid in order to fire a dielectric ceramic composition at a low temperature. Table 2 shows data of five samples obtained by firing the BaO-TiO 2 composition at 930 ° C. using this glass. In the firing using borosilicate glass as a sintering aid, as shown in the data of Table 2, it is difficult to sinter the BaO-TiO 2 composition at a temperature equal to or lower than the melting point of silver (Ag). is there. Therefore, a generally known method using a sintering aid can be co-fired with silver (Ag), for example, a dielectric ceramic composition that sufficiently satisfies the dielectric properties required for a ceramic filter for microwaves. There was a problem that can not be created.
[0006]
[Problems to be solved by the invention]
The present invention has been made in view of the above circumstances, and has a good dielectric property, and a dielectric ceramic composition that can be sintered at the same time as a silver electrode at a relatively low temperature to obtain a dense sintered body. The purpose is to provide.
[0007]
[Means for Solving the Problems]
In order to solve the above problems, the dielectric ceramic composition of the present invention is represented by a general formula αBaO · (1-α) TiO 2 (α is a molar ratio of 0.12 ≦ α ≦ 0.24).
[0008]
The glass is represented by a composition formula = aGeO 2 -bBaO-cBi 2 O 3 , wherein a, b, and c are molar ratios of 0.4 ≦ a ≦ 0.6 and 0.1 ≦ b ≦ 0.5, 0.1 ≦ c ≦ 0.5, where a + b + c = 1.
[0009]
The present inventor has developed a glass that can promote the sintering in a small amount of additives to the dielectric material (BaO-TiO 2 based composition), thereto by a combination of B 2 O 3, silver (Ag) It has been found that firing at a temperature lower than the melting point gives a good sintered body. That is, the sintered body of this dielectric porcelain composition has characteristics of relative permittivity εr = 32 to 46, Q = 191 to 993 (at a measurement frequency of 6.0 to 8.0 GHZ), and has a water absorption of 0. A dense structure of less than 1% is obtained. Due to this dense structure, the strength of the ceramic is improved, and the dispersion of the dielectric properties such as the relative dielectric constant εr and the Q value is reduced and stabilized. In addition, since the dielectric ceramic composition and the silver (Ag) electrode can be fired simultaneously, there is an advantage in manufacturing that the manufacturing process can be shortened and the manufacturing cost can be reduced.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the dielectric ceramic composition according to the present invention will be described in more detail with reference to Table 1 and FIGS. 1 to 5.
[0011]
Table 1 summarizes the composition and properties data for 34 samples. In preparing the sample, the addition ratio of glass and B 2 O 3 was changed, the composition of the glass was changed, the presence or absence of glass and B 2 O 3 as a sintering aid, and the sintering temperature were changed. The composition of the glass is shown in FIG.
[0012]
[Example]
BaCO 3 powder and TiO 2 powder are used as starting materials of the present invention, and a predetermined amount is weighed so as to have the composition shown in Table 1. This weighed raw material is wet-mixed with a ball mill for 18 hours and then dried to obtain a mixed powder. This mixed powder is fired in the atmosphere at a high temperature (for example, 1250 ° C.) without generating a sintering aid, to produce a BaO—TiO 2 compound. Thereafter, the powder is wet-pulverized with a ball mill for 24 hours to obtain a BaO-TiO 2 composition powder having an average particle diameter of 0.5 μm. FIG. 4 shows the particle size distribution data. From the X-ray diffraction pattern shown in FIG. 3, it can be confirmed that the composition is a BaO-TiO 2 composition. The above mixing time, high firing temperature, average particle size and the like are merely examples, and it is sufficient that the composition can be confirmed to be a BaO-TiO 2 composition by an X-ray diffraction pattern.
[0013]
Next, a glass containing Ge was produced. GeO 2 powder, BaCO 3 powder, and Bi 2 O 3 powder are used as starting materials, and they are weighed so as to have the sample compositions shown in Table 1. This weighed material is dry-mixed with a mortar / pestle for 10 minutes. The mixed powder is put into an alumina crucible and melted in a furnace at 1000 ° C. After 30 minutes, remove the crucible from the furnace and allow it to cool in the room to solidify the glass. The glass is taken out of the crucible and coarsely ground with an automatic mortar machine. The coarsely ground glass powder is wet-ground with a ball mill to obtain a glass powder having an average particle size of 1 μm (see FIG. 5). As shown in FIG. 2, it can be confirmed from the X-ray diffraction pattern that the powder is an amorphous glass. In addition, in this embodiment, the glass is produced by being allowed to cool at room temperature after being melted, but a general quenching granulation method, a quenching roll method or the like may be used. In any method, it is only necessary to confirm that the powder is an amorphous glass by an X-ray diffraction pattern.
[0014]
Glass powder and B 2 O 3 are weighed with respect to a BaO—TiO 2 composition of a predetermined component so that the composition shown in Table 1 is obtained (B 2 O 3 is weighed with H 3 BO 3 ). After it is wet-mixed with a ball mill, it is dried to obtain a mixed powder. An aqueous PVA solution is added to the mixed powder and granulated. This granulated powder is packed in a mold and is temporarily formed by uniaxial pressing. Further, the molded body is isotropically pressed by using a hydrostatic press to be molded. The compact was fired in the air at a low firing temperature shown in Table 1 below the melting point of silver (Ag) (= 961.93 ° C.) for 2 hours to obtain a sintered body. In this example, the sample is prepared by combining the powder mold pressing method and the hydrostatic pressing method. However, other forming methods such as a green sheet method, a casting method (casting method), and an extrusion method are used. It may be.
[0015]
Sample No. fired at each temperature in Table 1 for 2 hours. No. 1 to No. 1 31 was processed into a diameter of 9 mm and a height of 4.5 mm. Thereafter, the relative permittivity εr and Q of the sintered body obtained by the dielectric resonator method specified by the method for testing the dielectric properties of the microwave fine ceramic (JISR1627) were measured. Table 1 shows the measured data. In the same manner, the sample No. 32 to sample no. 34 measurements were also made.
[0016]
Sample No. 1 in Table 1. No. 1 to No. 1 The water absorption of No. 31 was determined by the method specified in the Electrical Insulating Ceramic Material Test Method (JISC2141). Those having a water absorption of less than 0.1% were judged to have been sufficiently sintered. In the same manner, the sample No. 32 to sample no. 34 measurements were also made.
[0017]
Eleven of the 34 samples in Table 1, ie, sample no. 3-No. 4, sample no. 9-No. 10, sample no. 12, sample no. 16-No. 19, sample no. 21, sample no. In No. 26, the values of α, a, b, c, x, and y are within the preferred composition range of the present invention. That is, a glass containing GeO 2 is added to 100 parts by weight of a material mainly containing a composition represented by the general formula αBaO · (1-α) TiO 2 (0.12 ≦ α ≦ 0.24 mol). x part by weight (10.0 ≦ x ≦ 17.5) and B 2 O 3 mixed with y part by weight (3.0 ≦ y ≦ 7.5) and baked, wherein the glass has a composition formula = aGeO 2- bBaO-cBi 2 O 3 , wherein a, b and c are represented by a molar ratio of 0.4 ≦ a ≦ 0.6, 0.1 ≦ b ≦ 0.5, 0.1 ≦ c ≦ 0.5, provided that a + b + c = 1.
[0018]
Sample No. 3-No. 4, sample no. 9-No. 10, sample no. 12, sample no. 21, sample no. Sample No. 26 has a low-temperature firing temperature of 900 ° C. 16-No. No. 19 has a low-temperature firing temperature of 870 ° C. For these 11 samples, a dielectric ceramic composition having a dense structure with a water absorption of less than 0.1% at a low temperature firing temperature of 870 to 900 ° C. was obtained. Regarding the relative dielectric constant εr, the sample No. 21 has the highest value (εr = 46), and the sample No. 10 and sample no. 12 and sample no. 16 and sample no. 19 has the lowest value (εr = 32). Regarding the Q value, the sample No. 16 has the highest value (Q = 993 [at the measurement frequency = 8 GHz]), and the sample No. 9 has the lowest value (Q = 518 [at measurement frequency = 7 to 8 GHZ]). As described above, as shown in Table 1, good data on sinterability, relative dielectric constant, and Q were obtained for 11 samples.
[0019]
[Comparative example]
Sample No. In No. 1, since the addition ratio of B 2 O 3 was less than the lower limit of 3.0 parts by weight, sintering was insufficient at 900 ° C., and the dielectric ceramic composition did not have a dense structure. On the other hand, sample No. 5 and sample no. 6 and sample no. In No. 7, since the addition rate of B 2 O 3 exceeded the upper limit of 7.5 parts by weight, a foaming phenomenon considered to be caused by excessive addition of B 2 O 3 was confirmed, and the water absorption rate was increased. Sample No. When the low-temperature sintering temperature is lower than 870 ° C. as in 8, the structure does not become dense and the water absorption does not become less than 0.1%.
[0020]
Next, a sample whose glass composition is out of the preferable composition range will be described. Sample No. 28, sample no. 30 and sample no. No. 31 has a high water absorption and is not densified. Further, the sample No. 29 is densified, but Q <100, which does not sufficiently satisfy the ceramic filter characteristics for microwaves.
[0021]
Next, the glass composition is within a preferable composition range, that is, represented by aGeO 2 -bBaO-cBi 2 O 3 , wherein a, b, and c are in a molar ratio of 0.4 ≦ a ≦ 0. 6, 0.1 ≦ b ≦ 0.5, 0.1 ≦ c ≦ 0.5, provided that a sample using glass having a composition in the range of a + b + c = 1 will be described. Sample No. In No. 15, since the glass addition is less than 10 parts by weight, the water absorption is not densified to less than 0.1%. Further, the sample No. Sample No. 13 is a sample in which the addition of B 2 O 3 was 15 parts by weight and the addition of glass was 2 parts by weight. On the other hand, sample No. As in 20, when the glass addition exceeded 17.5 parts by weight, the sample was damaged by oversintering.
[0022]
Sample No. 1 of the general formula αBaO · (1-α) TiO 2 having a large α was used. 23 (α> 0.24) was damaged due to oversintering. On the other hand, for sample No. 22 (α <0.12) did not densify to a water absorption of <0.1%.
[0023]
Next, it describes no BaO-TiO 2 composition addition of glass and B 2 O 3. The sample fired at a high firing temperature of 1200 ° C. without adding glass was the sample No. 32. Sample No. Sample No. 32 was insufficiently sintered and could not measure εr and Q. On the other hand, the sample fired at a high firing temperature of 1250 ° C. 33 and sample no. 34. Sample No. 33 and sample no. The sample No. 34 has been densified to obtain εr ≧ 38 and Q ≧ 2780 as its electrical characteristics. Therefore, a sintering temperature of ≧ 1250 ° C. is required for sintering a BaO—TiO 2 composition without glass addition.
[0024]
Table 1 summarizes the data of the composition and various characteristics for 34 samples.
[Table 1]
[0025]
Borosilicate glass is known as a sintering aid. Table 2 shows data of five samples obtained by firing the BaO-TiO 2 composition manufactured by firing the glass at a high temperature of 1250 ° C. at a low firing temperature of 930 ° C. As shown in Table 2, the dielectric properties could not be measured due to high water absorption and insufficient sintering.
[Table 2]
[0026]
Although one embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment, and it goes without saying that the present invention may be embodied in various forms within the scope of the technical idea.
[0027]
【The invention's effect】
According to the present invention, a material containing a composition represented by the general formula αBaO · (1-α) TiO 2 (where α is a molar ratio of 0.12 ≦ α ≦ 0.24) as a main component is used. By adding a small amount of glass and B 2 O 3 as sintering accelerators, the characteristics of relative permittivity εr = 32 to 46 and Q = 191 to 993 (at a frequency of 6.0 to 8.0 GHZ) are obtained. The dense dielectric ceramic composition can be fired at a temperature lower than the melting point of silver (Ag). Due to this dense structure, there is an improvement in performance in that the strength of the ceramic is improved, the variation in the relative dielectric constant εr and the Q value is reduced, and the dielectric characteristics are stabilized. Further, since the dielectric ceramic composition and the silver (Ag) electrode can be simultaneously fired, there is an advantage in manufacturing that the manufacturing process can be shortened and the manufacturing cost can be reduced.
[Brief description of the drawings]
FIG. 1 is a ternary composition diagram of the glass of the present invention.
FIG. 2 is an X-ray diffraction pattern diagram showing that the glass has a composition formula = aGeO 2 -bBaO-cBi 2 O 3 (a = 0.567, b = 0.243, c = 0.189).
FIG. 3 is an X-ray diffraction pattern diagram showing that the composition is a BaO—TiO 2 composition [αBaO. (1-α) TiO 2 ; α = 0.174].
FIG. 4 is a diagram showing particle size data of a BaO—TiO 2 composition.
FIG. 5 is a diagram showing particle size data of a glass containing GeO 2 .
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002186627A JP4097018B2 (en) | 2002-06-26 | 2002-06-26 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002186627A JP4097018B2 (en) | 2002-06-26 | 2002-06-26 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004026588A true JP2004026588A (en) | 2004-01-29 |
| JP4097018B2 JP4097018B2 (en) | 2008-06-04 |
Family
ID=31181924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002186627A Expired - Fee Related JP4097018B2 (en) | 2002-06-26 | 2002-06-26 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4097018B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011133303A (en) * | 2009-12-24 | 2011-07-07 | Kyocera Corp | Ceramic wiring board for probe card and probe card using the same |
| CN103553599A (en) * | 2013-09-27 | 2014-02-05 | 广东风华高新科技股份有限公司 | ZNT-BRT composite microwave dielectric ceramic and preparation method thereof |
-
2002
- 2002-06-26 JP JP2002186627A patent/JP4097018B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011133303A (en) * | 2009-12-24 | 2011-07-07 | Kyocera Corp | Ceramic wiring board for probe card and probe card using the same |
| CN103553599A (en) * | 2013-09-27 | 2014-02-05 | 广东风华高新科技股份有限公司 | ZNT-BRT composite microwave dielectric ceramic and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4097018B2 (en) | 2008-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4632534B2 (en) | Dielectric porcelain and manufacturing method thereof | |
| CN107986774A (en) | Low temperature sintering high-dielectric constant microwave-medium ceramics material and preparation method thereof | |
| JP3737773B2 (en) | Dielectric ceramic composition | |
| JP3737774B2 (en) | Dielectric ceramic composition | |
| JP2004284941A (en) | Dielectric composition for low temperature firing, and electronic component | |
| JPH05211007A (en) | Dielectric porcelain composition for microwave | |
| JP2781500B2 (en) | Dielectric ceramic composition for low temperature firing | |
| JP2005272199A (en) | Low temperature firing ceramic composition and method of manufacturing the same | |
| JP2004026588A (en) | Dielectric porcelain composition | |
| JP7315902B2 (en) | Dielectric porcelain composition and electronic parts | |
| JP4613952B2 (en) | Dielectric ceramic composition and high frequency device using the same | |
| JP2000086337A (en) | Dielectric ceramic composition for low temperature firing | |
| US7314841B2 (en) | Porcelain composition | |
| JP5422329B2 (en) | Dielectric porcelain composition | |
| JP3909366B2 (en) | Low dielectric constant porcelain composition and method for producing substrate for electronic circuit using the porcelain composition | |
| JP2781501B2 (en) | Dielectric ceramic composition for low temperature firing | |
| JP3375450B2 (en) | Dielectric porcelain composition | |
| JP4368136B2 (en) | Dielectric porcelain composition | |
| JP2004026590A (en) | Dielectric porcelain composition | |
| JP2004026591A (en) | Dielectric porcelain composition | |
| JP2005035870A (en) | Low-temperature fired dielectric ceramic and its manufacturing method | |
| JP2004026589A (en) | Dielectric porcelain formulation | |
| KR20040106235A (en) | Dielectric material and method of producing the same | |
| JP4998833B2 (en) | Manufacturing method of glass ceramic substrate and glass ceramic substrate | |
| JP3839868B2 (en) | Dielectric ceramic composition and electronic component |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041130 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071107 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071113 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080108 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080212 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080304 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110321 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110321 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120321 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130321 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140321 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313632 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313532 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |