JP2004017214A - Pad conditioning device, pad conditioning method, and polishing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pad conditioning device, a pad conditioning method and a polishing device wherein polishing characteristics is stabilized without polishing dummy wafer after replacing a polishing pad, and deterioration of section shape of the polishing pad is controlled even if the number of polished wafers increases. <P>SOLUTION: A pad conditioning device 20 setting and conditioning a polishing pad 12 is composed of a pad dresser 23 performing dressing of the polishing pad 12 and a dedicated dummy polishing article 24 conditioning the polishing pad 12 by being pressed on the polishing pad 12 to be polished instead of a dummy wafer. Setting and conditioning of the polishing pad 12 can be performed without using expensive dummy wafer by pressing the pad conditioning device 20 on the polishing pads 12 independently. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to pad conditioning for dressing and break-in of a polishing pad of a polishing apparatus, and more particularly, to pad conditioning of a polishing pad in a wafer polishing apparatus by chemical mechanical polishing (CMP).
[0002]
[Prior art]
In recent years, with the development of semiconductor technology, finer design rules and multilayer wiring have been advanced, and in order to reduce costs, the diameter of wafers has also been increased. Due to such miniaturization of the design rule, the depth of focus of the stepper in the lithography process is becoming increasingly shallow, and a prescribed wiring width cannot be accurately obtained due to fine irregularities on the wafer surface.
[0003]
For this reason, a surface flattening process has been performed for each wiring layer. A chemical mechanical polishing (CMP) apparatus is used for the planarization. In this method, the surface of a flattened wafer is pressed against a rotating polishing pad (polishing pad) while applying a slurry containing fine abrasive grains and chemicals, and the wafer is polished by a combined action of chemical action and mechanical action. This is widely used particularly for flattening metal films such as Cu wiring and W plugs.
[0004]
In polishing a semiconductor device wafer, a dressing tool (dresser) used for dressing a polishing pad uses a diamond dresser in which diamond is electrodeposited on a metal material such as SUS. As a method of manufacturing the diamond dresser, there is a method described in Japanese Patent Application Laid-Open No. H10-15819. In this method, one layer of diamond abrasive grains is temporarily fixed to a dresser substrate by metal plating such as nickel, and then the diamond abrasive grains called floating stones are removed, and then plated until the diamond abrasive grains are completely embedded. Is performed, and then the stone is processed to expose the tip of the abrasive grains. The diamond dresser thus produced has a shape in which the tips of the abrasive grains are substantially at the same height.
[0005]
By operating this dresser by pressing it against a clogged polishing pad, the surface of the polishing pad is shaved thinly and the pad surface is replaced with a new surface, thereby maintaining the polishing pad's slurry retention and obtaining stable polishing performance. I have to.
[0006]
[Problems to be solved by the invention]
However, polishing characteristics cannot be stabilized only by dressing with a dresser, and it is necessary to polish a wafer (dummy wafer) on which a film to be polished is formed so as to break in a polishing pad. In particular, immediately after the replacement of the polishing pad, it was necessary to flow a large amount of dummy wafers of 5 to 10 sheets, and sometimes 25 sheets after dressing with a dresser.
[0007]
For this reason, it usually takes about one hour to start the replacement of the polishing pad, including the time for replacing the polishing pad. In addition, the dummy wafer used for this purpose is expensive, and it has conventionally required a great deal of cost and time to start the replacement of the polishing pad.
[0008]
In addition, even with the polishing pad thus started up, as the number of polished wafers increases, a portion of the polishing pad in contact with the wafer is selectively shaved, or deformed or deteriorated, and the cross-sectional shape of the polishing pad is reduced. Since it changes with time, the polishing characteristics, particularly the polishing rate, become less uniform within the wafer surface.
[0009]
The present invention has been made in view of such circumstances, and it is possible to stabilize polishing characteristics without polishing a dummy wafer after replacing a polishing pad, and it is possible to stabilize polishing characteristics even when the number of polished wafers increases. It is an object of the present invention to provide a pad conditioning device, a pad conditioning method, and a polishing device capable of suppressing deterioration of polishing.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, the invention according to claim 1 is a pad conditioning apparatus that adjusts the surface state of the polishing pad of a polishing apparatus that presses a wafer against a polishing pad while supplying a slurry, and adjusts a surface state of the polishing pad. A pad dresser for dressing the polishing pad, and a pseudo-abrasive that is provided exclusively for the pad conditioning device and that breaks in the polishing pad, wherein the pad dresser and the pseudo-abrasive are independent of each other. The polishing pad is configured to be pressed by the polishing pad.
[0011]
According to the first aspect of the present invention, the pad conditioning apparatus has a pad dresser for dressing the polishing pad and a dedicated pseudo-abrasive for customizing the polishing pad, each of which is independently pressed by the polishing pad. Therefore, dressing and break-in of the polishing pad can be performed without using an expensive dummy wafer, and the cost and time required for starting up the replacement of the polishing pad and for repairing the polishing pad at an intermediate stage are significantly reduced. be able to.
[0012]
The invention according to claim 2 is characterized in that, in the invention according to claim 1, the pseudo-polished object is made of the same or similar material as the object to be polished.
[0013]
According to the second aspect of the present invention, since the material of the pseudo-polished object used in place of the dummy wafer is the same as or similar to the object to be polished, the object to be polished is not contaminated by contamination of another material.
[0014]
According to a third aspect of the present invention, in the first or the second aspect of the present invention, a center of the pad dresser and a center of the pseudo polishing object are concentrically arranged.
[0015]
According to the third aspect of the present invention, since the pad dresser and the quasi-abrasive are concentric, the rotating means for rotating each of them can be shared, and the structure of the pad conditioning device can be simplified and the cost can be reduced. .
[0016]
The pad conditioning method according to claim 4, wherein at least at the time of starting the pad after replacing the polishing pad, or between wafer polishing and wafer polishing, or during wafer polishing, the pad conditioning method according to claim 1. Using a pad conditioning device according to the above, applying an independent load to each of the pad dresser and the pseudo-abrasive, both at the same time, or each alone, or conditioning the polishing pad while using alternately. Features.
[0017]
According to the invention of claim 4, by using a pad conditioning device having a pad dresser that sharpens the polishing pad independently pressed against the polishing pad and a dedicated pseudo-abrasive to perform break-in of the polishing pad, Polishing and conditioning of the polishing pad allows conditioning of the polishing pad without using expensive dummy wafers. The time can be significantly reduced, and the life of the polishing pad can be extended.
[0018]
In a polishing apparatus for polishing a wafer by pressing a wafer against a polishing pad while supplying a slurry, a pad dresser for dressing the polishing pad and a dedicated dummy for dressing the polishing pad are provided. A pad conditioning apparatus having a polished object, a pad profile measuring means for measuring a surface profile of the polishing pad, and an operation of the pad conditioning apparatus based on surface profile data of the polishing pad measured by the pad profile measuring means. And a controller for controlling.
[0019]
According to the fifth aspect of the present invention, since the controller for measuring the surface profile of the polishing pad and controlling the operation of the pad conditioning apparatus based on the measurement data is provided, the cross-sectional state of the polishing pad is maintained in a good shape. The polishing characteristics, particularly the uniformity of the polishing rate within the wafer surface, can be kept good, and the life of the polishing pad can be extended.
[0020]
7. A pad conditioning method for adjusting a surface condition of a polishing pad of a polishing apparatus for polishing a wafer by pressing a wafer against a polishing pad while supplying a slurry, wherein the polishing pad is dressed. Using a dresser, and a pad conditioning device having a dedicated polished material for performing a break-in of the polishing pad, measuring the surface profile of the polishing pad, the measured surface profile data of the polishing pad, the pad The operation of the conditioning device is controlled.
[0021]
According to the pad conditioning method of the sixth aspect, the surface profile of the polishing pad is measured, and the operation of the pad conditioning device is controlled based on the measured surface profile data of the polishing pad. In addition, it is possible to maintain good uniformity of the polishing characteristics, particularly the uniformity of the polishing rate within the wafer surface, and extend the life of the polishing pad.
[0022]
In a polishing apparatus for polishing a wafer by pressing a wafer against a polishing pad while supplying a slurry, a pad dresser for dressing the polishing pad, and a dedicated dummy for performing a break-in of the polishing pad are provided. It is characterized by having a pad conditioning device having a polishing object, and a pseudo polishing object profile measuring means for measuring a surface profile of the pseudo polishing object.
[0023]
According to the seventh aspect of the present invention, since the means for measuring the profile of the pseudo-abrasive provided in the pad conditioning apparatus is provided, it is possible to determine whether the mounting state of the pseudo-abrasive is good or to determine the replacement time. Or you can.
[0024]
9. A pad conditioning method for adjusting a surface state of a polishing pad of a polishing apparatus for polishing a wafer by pressing a wafer against a polishing pad while supplying a slurry, wherein the polishing pad is dressed. A dresser, and using a pad conditioning apparatus having a dedicated polished material for performing a break-in of the polishing pad, measuring the surface profile of the simulated polished material, by the measured surface profile data of the simulated polished material, It is characterized in that it is determined whether or not the pseudo abrasive can be used.
[0025]
According to the eighth aspect of the present invention, the surface profile of the simulated polished object is measured, and the use of the simulated polished object is determined based on the measured surface profile data. Or determine when to replace it.
[0026]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of a pad conditioning apparatus, a pad conditioning method, and a polishing apparatus according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same members are denoted by the same reference numerals and symbols.
[0027]
FIG. 1 is a plan view showing a polishing apparatus provided with a pad conditioning apparatus for a polishing pad according to the present invention. As shown in FIG. 1, a polishing apparatus 10 includes a polishing platen 11 having a polishing pad 12 adhered to an upper surface, a polishing head 30 for holding a wafer W and pressing the polishing pad 12, and an upper surface of the polishing pad 12. A slurry nozzle 13 for supplying slurry to the polishing pad 12, a pure water nozzle 14 for supplying pure water to the upper surface of the polishing pad 12, and a pad conditioning apparatus 20 for adjusting the surface condition of the polishing pad 12.
[0028]
The polishing apparatus 10 includes a pad profile measuring means (51 in FIG. 5) for measuring the surface profile of the polishing pad 12 and a pseudo polishing described later attached to the pad conditioning apparatus 20 and used to break in the polishing pad 12. A simulated polished object profile measuring means (52 in FIG. 6 described later) for measuring a polished surface profile of the object is provided.
[0029]
The polishing platen 11 and the polishing head 30 rotate in the directions of the arrows in the figure, respectively, and the wafer W held by the polishing head 30 and pressed against the polishing pad 12 exerts chemical and mechanical actions due to the supplied slurry. Polished.
[0030]
As shown in FIG. 1, the pad conditioning device 20 is mounted on a pivot shaft 25, an arm 26 extending from the pivot shaft 25, and a tip of the arm 26. The pad conditioning device 20 is pivoted in the direction of arrow AA in FIG. The conditioning head 21 is configured to rotate by a mechanism.
[0031]
FIG. 2 is a plan view of the polishing apparatus 10, which is schematically illustrated for explaining the conditioning head 21 of the pad conditioning apparatus 20. In FIG. 2, the illustration of the polishing head 30 is omitted.
[0032]
As shown in FIG. 2, the conditioning head 21 includes a head body 22, a pad dresser 23, a pseudo-abrasive 24, and the like, which are rotated and vertically moved by a driving unit (not shown). The pad dresser 23 is for sharpening and sharpening the surface of the polishing pad 12 of the polishing apparatus 10, and diamond abrasive grains are electrodeposited on the end surface of the ring-shaped base material using Ni as a binder.
[0033]
The abrasive grains were artificial diamond # 100 (average particle diameter 170 μm), and the average protrusion amount from the upper surface of the binder to the tip of the abrasive grains was 30 μm. In addition, a material having high hardness such as SiC (silicon carbide), DLC (Diamond Like Carbon), CBN (Cubic Boron Nitride), and WC (tungsten carbide) can be used for the abrasive grains other than diamond.
[0034]
The pad dresser 23 is vertically slidably mounted on the outer periphery of the head main body 22 and is moved up and down by driving means (not shown). The pad dresser 23 is pressed against the polishing pad 12 by a force F2 shown in the figure. ing. Further, the head body 22 is rotated together with the rotation.
[0035]
The simulated polishing object 24 is used to fix the polishing pad 12 by being pressed against the polishing pad 12 instead of the dummy wafer and polished, and has a cylindrical shape, and is attached to the lower surface of the head main body 22. The head is rotated together with the head main body 22 by a driving unit (not shown) and is moved up and down, and is pressed against the polishing pad 12 by a force F1 shown in the figure.
[0036]
The simulated polished object 24 is preferably made of the same or similar material as the film to be polished of the wafer W in order to prevent the wafer W to be polished from being contaminated by contamination. Therefore, it is made of SiO2, Cu or the like, and can be used properly according to the film to be polished.
[0037]
FIG. 3 is a view of the conditioning head 21 viewed from the lower surface side. As shown in FIG. 3, the pad dresser 23 has a concentric arrangement in which the center of the pad dresser 23 coincides with the center of the simulated abrasive 24.
[0038]
Further, as shown in FIG. 2, the polishing apparatus 10 is provided with a controller 40, which controls the operation of each part of the polishing apparatus 10 and the operation of the pad conditioning apparatus 20. The controller 40 includes a CPU, a memory, an input / output circuit unit, and the like (not shown), and is connected to each other via a bus line.
[0039]
Next, the operation of the pad conditioning device 20 will be described. When the polishing pad 12 is replaced and the pad is started up, the polishing pad 12 is rotated together with the polishing platen 11, and only the pad dresser 23 is rotated as shown in FIG. While being pressed, the polishing pad 12 is pressed by the force F3 shown in the figure. At the same time, the entire conditioning head 21 is turned around the turning axis 25 by the arm 26, and dressing is performed by the pad dresser 23 from the central portion to the outer peripheral portion of the polishing pad 12. At this time, pure water is supplied from the pure nozzle to the upper surface of the polishing pad 12 to wash away shavings.
[0040]
Next, as shown in FIG. 2, the pseudo abrasive 24 is pressed against the polishing pad 12, and pad dressing by the pad dresser 23 and polishing of the pseudo abrasive 24 are performed simultaneously. Also at this time, the entire conditioning head 21 is rotated and turned, and the polishing pad 12 is uniformly dressed and conditioned in a region including its periphery with respect to a contact region with the wafer W to be polished. At this time, a slurry for polishing is supplied from the slurry nozzle 13.
[0041]
Finally, the pad dresser 23 is raised, and only the polishing of the simulated polishing object 24 is performed, so that the polishing pad 12 is optimally conditioned. In addition, since the pad dresser 23 and the simulated polishing object 24 are independently pressed against the polishing pad 12, the conditioning method is not limited to the order described above, and may be appropriately adjusted according to the surface condition of the polishing pad. Combinations are possible.
[0042]
Embodiment 1
Next, a specific embodiment of the pad conditioning method according to the present invention will be described. In the first embodiment, when starting up the pad after the replacement of the polishing pad 12, first, only the pad dresser 23 is actuated, the load of the pad dresser 23 is 5 psi, the number of revolutions of the polishing platen 11 is 50 rpm, and the conditioning head 21 is turned on. The number of revolutions was 30 rpm, and the conditioning head 21 was dressed for 15 minutes while rotating from the center to the outer periphery of the polishing pad 12 at one reciprocation of 20 sec. The slurry was supplied to the vicinity of the center of the polishing pad 12 at a flow rate of 150 ml / min using an oxide film.
[0043]
Next, a pad dresser 23 was used in combination with a pad dresser 23 using an SiO 2 block as the simulated polished object 24, the pad dresser load was changed to 2 psi, and the SiO 2 block was operated for 15 minutes with a load of 3 psi. The rotation speed, swirling speed, and slurry flow rate were the same as described above.
[0044]
After the pad conditioning described above, 100 wafers with TEOS film were continuously run. As a result, a stable polishing rate was obtained from the first wafer, and the polishing rate non-uniformity between wafers was as good as 3% or less. Was.
[0045]
Embodiment 2
Next, a second embodiment will be described. First, 100 wafers with a TEOS film were continuously run on one polishing pad 12 by a normal polishing method. The non-uniformity of the polishing rate in the wafer surface was reduced from about 2% immediately after the polishing pad 12 was started up. It gradually deteriorated to about 6%.
[0046]
Therefore, the load of the pad dresser 23 was set to 2 psi, and the SiO 2 block as the simulated polishing object 24 was operated for 15 minutes while applying a load of 3 psi. At this time, the turning speed of the conditioning head was adjusted, and the contact time between the portion of the polishing pad 12 that did not contact the wafer W and the conditioning head was controlled to be five times that of the other portions.
[0047]
When 20 wafers with a TEOS film were continuously polished after the pad conditioning operation, the non-uniform polishing rate in-plane of the wafer was improved to 3% or less in all the wafers W.
[0048]
Next, the configuration and operation of the pad profile measuring means and the pseudo-polished product profile measuring means provided in the polishing apparatus 10 will be described.
[0049]
FIG. 5 is a conceptual diagram illustrating a method for measuring the wear profile of the polishing pad 12. As shown in FIG. 5, the wear profile of the polishing pad 12 is measured by the pad profile measuring means 51, and the measured data is taken into the controller 40.
[0050]
The pad profile measuring means 51 includes a displacement measuring device such as an electric micrometer and a driving device (not shown) for moving the displacement measuring device along the polishing pad 12. The method of measuring the wear profile of the polishing pad 12 is measured by bringing the probe of the displacement measuring device into contact with the upper surface of the polishing pad 12 and traversing the displacement measuring device along the upper surface of the polishing pad 12.
[0051]
The wear profile of the polishing pad 12 is used as follows. First, a large number of wafers W are continuously polished by a normal polishing method. When the non-uniformity of the in-plane polishing rate of the wafer W becomes worse, the wear profile of the polishing pad 12 is measured, and the pad conditioning device 20 is controlled based on the data. The operation is controlled to control the surface state of the polishing pad 12.
[0052]
In this case, in order to make the thickness of the polishing pad uniform, the turning method of the conditioning head 21, the rotation speeds of the conditioning head 21 and the polishing platen 11, and the loads of the pad dresser 23 and the simulated polishing object 24 are respectively changed. Conditioning is performed. The control parameters of each unit are freely programmable and are feedback-controlled by the controller 40. Thereby, the nonuniformity of the polishing rate in the wafer surface is recovered.
[0053]
FIG. 6 is a conceptual diagram illustrating a method of measuring the surface profile of the simulated polished object 24. As shown in FIG. 6, the profile of the polished surface of the simulated polished object 24 is measured by the simulated polished object profile measuring means 52, and the measurement data is taken into the controller 40. At this time, the pad dresser 23 is retracted above the simulated polished object 24 so as not to interfere with the simulated polished object profile measuring means 52.
[0054]
Similar to the pad profile measuring means 51, the pseudo polishing object measuring means 52 includes a displacement measuring device such as an electric micrometer and a driving device (not shown) for moving the displacement measuring device along the surface to be polished of the pseudo polishing object 24. Has become. The method of measuring the profile of the simulated polished object 24 is measured by bringing the probe of the displacement measuring device into contact with the lower surface of the simulated polished object 24 and traversing the displacement measuring device along the lower surface of the simulated polished object 24.
[0055]
The polished surface profile of the polishing pad 12 is used as follows. First, when the simulated abrasive 24 is mounted on the head body 22 of the conditioning head 21, the profile of the lower surface of the simulated abrasive 24 is measured, and based on the measurement data, the quality of the mounted state of the simulated abrasive 24 is determined. I do. For example, when a foreign substance is mixed into the mounting surface of the simulated abrasive 24 and the entire simulated abrasive 24 is inclined and attached, the lower surface profile of the simulated abrasive 24 is inclined and it is determined that the mounting is defective.
[0056]
In addition, during the conditioning of the polishing pad 12, the dummy polishing object 24 is polished instead of the dummy wafer, and the polishing pad 12 is broken in. In some cases, the polishing pad 12 may be deformed into a shape that is inappropriate for the break-in. Also in this case, the profile of the lower surface of the simulated polished object 24 is periodically measured, and the time for replacing the simulated polished object 24 can be determined based on the measured data.
[0057]
The judgment as to whether or not the mounting state of the simulated abrasive 24 is good and the time to replace the simulated abrasive 24 may be automatically determined by the controller 40 based on limit data input in advance, or The determination may be made by the operator.
[0058]
In the embodiment described above, the pad dresser 23 and the simulated abrasive 24 of the pad conditioning device 20 are mounted on the common head main body 22 to form the conditioning head 21. However, the present invention is not limited to this. The moving mechanism and the turning mechanism may be provided, or the rotating mechanism and the vertical moving mechanism may be made independent and the turning mechanism may be shared.
[0059]
Further, the pad profile measuring means 51 and the pseudo-abrasive product profile measuring means 52 are separately provided. However, the pad profile measurement and the pseudo-abrasive product profile measurement can be switched and performed by one displacement measuring device. Is also good.
[0060]
【The invention's effect】
As described above, according to the present invention, the pad conditioning apparatus has a pad dresser for dressing the polishing pad, and a pseudo-abrasive for exclusive use to break-in the polishing pad, each of which is independently pressed by the polishing pad. Therefore, dressing and break-in of the polishing pad can be performed without using expensive dummy wafers, greatly reducing the cost and time required for starting up the replacement of the polishing pad or repairing the polishing pad in the middle stage. And the life of the polishing pad can be extended.
[0061]
Further, since the material of the pseudo-polished object used in place of the dummy wafer is the same as or similar to the object to be polished, the object to be polished is not contaminated by contamination of another material.
[0062]
In addition, since the pad dresser and the simulated polished material are concentric, the rotating means for rotating each of them can be shared, and the structure of the pad conditioning apparatus can be simplified, and the cost can be reduced.
[0063]
Further, the polishing apparatus has a pad profile measuring means, and the operation of the pad conditioning apparatus is controlled by the surface profile data of the polishing pad, so that the cross-sectional state of the polishing pad can be maintained in a good shape, and the polishing characteristics can be maintained. In particular, the uniformity of the polishing rate within the wafer surface can be kept good, and the life of the polishing pad can be extended.
[0064]
In addition, since the pseudo abrasive article profile is provided with a measuring means, it is possible to judge whether or not the attached state of the pseudo abrasive article is good or to judge the replacement time.
[Brief description of the drawings]
FIG. 1 is a plan view of a polishing apparatus provided with a pad conditioning apparatus according to an embodiment of the present invention. FIG. 2 is a side view of the polishing apparatus according to the embodiment of the present invention. FIG. FIG. 4 is a side view illustrating a dressing state. FIG. 5 is a side view illustrating a method of measuring a polishing pad wear profile. FIG. 6 is a side view illustrating a method of measuring a pseudo-abrasive profile. Description】
DESCRIPTION OF SYMBOLS 10 ... Polishing device, 11 ... Polishing surface plate, 12 ... Polishing pad, 20 ... Pad conditioning device, 21 ... Conditioning head, 22 ... Head main body, 23 ... Pad dresser, 24 ... Pseudo polished material, 30 ... Polishing head, 40 ... Controller, 51: Pad profile measuring means, 52: Pseudo-abrasive profile measuring means, W: Wafer

Claims (8)

In a polishing apparatus for polishing by pressing a wafer against a polishing pad while supplying a slurry, a pad conditioning apparatus for adjusting the surface state of the polishing pad,
A pad dresser for dressing the polishing pad,
A dedicated polishing object that is provided exclusively for the pad conditioning device, and performs break-in of the polishing pad,
The pad conditioning apparatus according to claim 1, wherein the pad dresser and the simulated polishing object are configured to be independently pressed by the polishing pad. 2. The pad conditioning apparatus according to claim 1, wherein the simulated polished object is made of the same or similar material as the polished object. 3. The pad conditioning apparatus according to claim 1, wherein a center of the pad dresser and a center of the pseudo polished object are arranged concentrically. 4. At least at the time of pad startup after the polishing pad exchange, or between wafer polishing and wafer polishing, or during wafer polishing,
Using the pad conditioning device according to any one of claims 1 to 3,
Applying an independent load to each of the pad dresser and the simulated abrasive,
A pad conditioning method characterized in that the polishing pad is conditioned while using the polishing pad simultaneously, individually or alternately. In a polishing apparatus for polishing by pressing a wafer against a polishing pad while supplying a slurry,
A pad conditioning device having a pad dresser for dressing the polishing pad, and a dedicated quasi-abrasive to perform break-in of the polishing pad,
Pad profile measuring means for measuring the surface profile of the polishing pad,
A controller for controlling the operation of the pad conditioning apparatus according to the surface profile data of the polishing pad measured by the pad profile measuring means;
A polishing apparatus comprising: A polishing apparatus for polishing by pressing a wafer against a polishing pad while supplying a slurry, in a pad conditioning method for adjusting the surface state of the polishing pad,
While using a pad conditioning device having a pad dresser for dressing the polishing pad, and a dedicated pseudo-abrasive to perform break-in of the polishing pad,
Measure the surface profile of the polishing pad,
A pad conditioning method, wherein the operation of the pad conditioning apparatus is controlled based on the measured surface profile data of the polishing pad. In a polishing apparatus for polishing by pressing a wafer against a polishing pad while supplying a slurry,
A pad conditioning device having a pad dresser for dressing the polishing pad, and a dedicated quasi-abrasive to perform break-in of the polishing pad,
Pseudo-abrasive profile measurement means for measuring the surface profile of the pseudo-abrasive,
A polishing apparatus comprising: A polishing apparatus for polishing by pressing a wafer against a polishing pad while supplying a slurry, in a pad conditioning method for adjusting the surface state of the polishing pad,
While using a pad conditioning device having a pad dresser for dressing the polishing pad, and a dedicated pseudo-abrasive to perform break-in of the polishing pad,
Measure the surface profile of the simulated abrasive,
A pad conditioning method, comprising determining whether or not the simulated polished object can be used based on the measured surface profile data of the simulated polished object.

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