JP2004014899A - Series structure of light emitting diode chips - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve light emission brightness from a single chip by assuring the use of high operation voltage per a single chip of a light emitting diode. <P>SOLUTION: A plurality of light emitting diodes are arranged in a two dimensional array on a single substrate as a unit, and voltage between the opposite ends of the light emitting diode formed on the substrate is raised by connecting unit chips in series to assure the use of high operation voltage and improve light emission brightness. The use of a commercial power supply is assured by increasing the number of units of the light emitting diodes connected in series, and hence power supply equipment can be simplified. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a serial structure of light emitting diode chips, and more particularly, to increasing the light emission luminance and operating voltage of a single chip (LED) using an equivalent series method inside a light emitting diode, and of an external power supply circuit attached to an external power supply system. It relates to a technology that can be omitted from use.
[0002]
[Prior art]
In a general light emitting diode chip, a method of increasing the brightness of a single chip is to increase the chip size, the size of which increases from 9 mm × 9 mm to 25 mm × 25 mm, and has grown to 40 mm × 40 mm in the last two years. I have. The operating current of one chip is changed from 20 mA to 50 mA and then to 500 mA, the power supply for general lighting is 110 V or 220 V alternating current (AC), and the current of the light emitting diode (LED) is 20 mA to 500 mA. The voltage was direct current (DC) between 2V and 4V, and the larger the intermediate current, the more difficult it was to supply power. Therefore, the cost and difficulty of rectifying equipment and transformer circuit equipment of 110 V or 220 V of alternating current (AC) and 2 V × 500 mA of direct current (DC) power to 4 V × 1 A have relatively increased. When used for a long time, a great deal of power is consumed and the power supply equipment becomes difficult to withstand the load. FIGS. 7 and 8 show equivalent circuits of the light emitting diode described above.
[0003]
[Problems to be solved by the invention]
The main object of the present invention is to increase the chip area by increasing the chip operating voltage when increasing the brightness of a single light emitting diode (LED) by using a series equivalent circuit to increase the chip area inside the light emitting diode chip. To improve the operational disadvantage that conventional large chips must use large currents and low voltages. In addition, the light emitting diode is not a direct current (DC) power of 2 V × 500 mA and 4 V × 1 A, but has many options such as 10 V, 24 V, 110 V,..., Or 20 mA, 50 mA,. Can be. The present invention generates similar or higher power under different operating conditions to improve the complexity of the light emitting diode (LED) and external power supply operating circuitry.
[0004]
[Means for Solving the Problems]
In order to achieve the above-described object, the light emitting diode chip of the present invention has a series structure in which a plurality of light emitting diodes are arranged on a single substrate by a two-dimensional array method. The semiconductor layer and the N-type semiconductor layer are electrically connected by a conductor, the P and N-type semiconductor layers of the plurality of light emitting diodes are connected in series, and the P and N-type semiconductor layers are not electrically connected to the conductor. , N-type semiconductor layers are electrically connected to the conductive portions, respectively, and are used to connect the conductive portions to an external power supply. In this way, the single light emitting diode can emit light as a light source with high luminance, and the power supply equipment attached to the light emitting diode can be omitted.
[0005]
DETAILED DESCRIPTION OF THE INVENTION
1 to 3 are a plan view of a light emitting diode, a layout view of a substrate, and a side view of the substrate, respectively, according to the present invention. As shown, in the light emitting diode chip series structure of the present invention, the light emitting diode 1 includes a P-type semiconductor layer 11 and an N-type semiconductor layer 12 electrically connected to the substrate 2. A plurality of light emitting diodes 1 are arranged on a substrate 2 by a two-dimensional array method, and the substrate 2 is made of an insulating material. The substrate 2 may be a transparent body or an opaque body. The P-type semiconductor layer 11 and the N-type semiconductor layer 12 of the plurality of light emitting diodes 1 are electrically connected by the conductor 3. The conductor 3 is a transparent or opaque body. A predetermined circuit including the conductor 3 is provided on the substrate 2 by wire bonding or chip plating coating, and the P-type semiconductor layers 11 of the plurality of light emitting diodes 1 are provided. And the N-type semiconductor layer 12 are turned on, and the P-type semiconductor layer 11 and the N-type semiconductor layer 12 not electrically connected to the conductor 3 are electrically connected to the conductive portions 4 and 5, respectively. Connect to By connecting the conductive portion 4 and the conductive portion 5 to an external power source (not shown), the conductive portion 4 and the conductive portion 5 are connected to an external power source by wire bonding, chip plating coating, or a conductor of a printed circuit board (PCB). To turn on the light emitting diode 1. In the present invention, since the P-type semiconductor layer 11 and the N-type semiconductor layer 12 of the plurality of light emitting diodes 1 are formed as a single serial light emitting diode, the operating voltage can be increased with a relatively small current and the luminance can be improved. it can. Therefore, it can be applied to a general household power supply, and the single light emitting diode 1 can be used as a light source for high luminance light emission. In this way, it is not necessary to separately add a new power supply facility. Thus, future light emitting diodes (LEDs) are not limited to a power of 2,3V, 20-500mA, and may have a power of 10mA, 20mA at 10V or 100V. By generating the same or higher power in the light emitting diode under different operating conditions, the complexity of the light emitting diode (LED) and the operation circuit of the external power supply can be improved.
[0006]
The P-type semiconductor layer and the N-type semiconductor layer of the plurality of light emitting diodes 1 described above can be provided above the substrate, or can be provided below the substrate as needed in actual situations ( Shown in FIG. 4). The P-type semiconductor layer 11 and the N-type semiconductor layer 12 may be electrically connected in a serial manner (shown in FIG. 5), or may be electrically connected in a serial manner after the parallel connection (see FIG. 5). 6).
[0007]
As described above, the present invention has been disclosed by the preferred embodiments. However, the present invention is not intended to limit the present invention, and within the scope of the technical concept of the present invention, as can be easily understood by those skilled in the art. Since appropriate changes and modifications can naturally be made, the scope of protection of the patent must be determined based on the claims and their equivalents.
[0008]
【The invention's effect】
By providing a series structure of light emitting diode chips and utilizing an equivalent series method inside the light emitting diode, the light emission brightness and operating voltage of a single chip (LED) can be increased.
[Brief description of the drawings]
FIG. 1 is a plan view of an encapsulated light emitting diode according to the present invention.
FIG. 2 is a layout diagram of a substrate according to the present invention.
FIG. 3 is a side view of a substrate according to the present invention.
FIG. 4 is a side view of a substrate according to another embodiment of the present invention.
FIG. 5 is a circuit diagram showing an equivalent circuit in a series state according to the present invention.
FIG. 6 is a circuit diagram showing an equivalent circuit in series and parallel states according to the present invention.
FIG. 7 is a plan view showing a general large chip.
FIG. 8 is a circuit diagram showing an equivalent circuit of a general large chip.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 light emitting diode 11 P-type semiconductive layer 12 N-type semiconductive layer 2 Substrate 3 Conductor 4 Conductor 5 Conductor

Claims (9)

A light emitting diode chip comprising a P-type semiconductor layer and an N-type semiconductor layer formed on a substrate,
A plurality of light-emitting diodes are arranged on the substrate by a two-dimensional array method, and the P-type semiconductor layer and the N-type semiconductor layer of the plurality of light-emitting diodes are electrically connected by a conductor. The P and N-type semiconductor layers of the plurality of light emitting diodes are made conductive by a series method, and the P and N-type semiconductor layers of the terminals that are not electrically connected to the conductor are electrically connected to the conductive portions, respectively. Connected to an external power supply, thus increasing the brightness of the single chip of the light emitting diode, reducing the load on the power supply equipment by enabling operation with high voltage and low current, and connecting the light emitting diode chips in series. Construction. 2. The light emitting diode chip of claim 1, wherein the substrate is made of an insulating material. The series structure of the light emitting diode chips according to claim 1, wherein the substrate is a transparent body or an opaque body. The light emitting diode chip of claim 1, wherein the P-type semiconductor layer and the N-type semiconductor layer of the plurality of light emitting diodes are electrically connected in series by a chip plating coating method. The series structure of a light emitting diode chip according to claim 1, wherein the P-type semiconductor layer and the N-type semiconductor layer of the plurality of light emitting diodes are connected in parallel and then electrically connected in series. The series structure of the light emitting diode chip according to claim 1, wherein the conductor is a transparent body. The light emitting diode chip of claim 1, wherein the conductor is an opaque material. The series structure of the light emitting diode chips according to claim 1, wherein the conductor is provided with a predetermined circuit on the chip substrate by a wire bonding method or a plating coating method in a chip manufacturing process. The series structure of the light emitting diode chips according to claim 1, wherein the P-type semiconductor layer and the N-type semiconductor layer are provided on the substrate or under the substrate as required in an actual situation.

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