JP2004012408A - Manufacturing method of physical quantity detector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of physical quantity detector by which a physical quantity detector can be cut favorably out of a silicon wafer or the like, even for a physical quantity detector of air-exposed type. <P>SOLUTION: A movable electrode plate is formed on a silicon substrate 102, fixed electrode plates are formed on glass substrates 101, 103, a groove part M is provided along a width direction in a prescribed position of the silicone substrate, the movable electrode plate is face to the fixed electrode plates, the silicon substrate is anode-joined to the glass substrates, a depth of cut is provided along a width direction in a position corresponding to the groove part to provide a glass notch part (for example, the first notch part K1), and one-portions of the silicon substrate and the glass substrates are cut out along the groove part and the glass notch part. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a physical quantity detector that detects physical quantities such as acceleration, displacement, pressure, and the like based on a capacitance difference.
[0002]
[Prior art]
Conventionally, various types of physical quantity detectors have been provided. For example, a capacitive acceleration sensor described in Japanese Patent Application Laid-Open No. 9-243654 is known.
In the acceleration sensor 1000, for example, as shown in FIG. 5, a first glass substrate 1002 is joined to a lower surface of a silicon substrate 1001, and a second glass substrate 1003 is joined to an upper surface of the silicon substrate 1001. The weight portion 1001b of the silicon substrate 1001 is supported by a cantilever via a beam portion 1001c, and is connected to a support frame 1001a having a flat square shape formed by etching. Further, a predetermined gap is formed between the upper and lower surfaces of the weight portion 1001b and the opposing surfaces of the opposing glass substrates 1002 and 1003. Accordingly, when receiving an acceleration, the beam portion 1001c bends, the weight portion 1001b is displaced, and the distance of the gap changes.
[0003]
Then, movable electrodes 1004 are formed on both surfaces of the weight portion 1001b, and first fixed electrodes 1005 are respectively formed on inner surfaces of the first glass substrate 1002 and the second glass substrate 1003 so as to face the movable electrodes 1004. And a second fixed electrode 1006 are formed. Therefore, when the weight portion 1001b is displaced and the distance of the gap changes, a first capacitor is formed between the movable electrode 1004 and the first fixed electrode 1005, and a second capacitor is formed between the movable electrode 1004 and the second fixed electrode 1006. Are formed, and as the movable electrode 1004 moves, the capacitances of the first capacitor and the second capacitor also change. By detecting the change in the capacitance, the acceleration based on the displacement of the weight portion 1001b can be detected.
[0004]
By the way, conventionally, for example, a plurality of acceleration sensors 1000 are manufactured from one silicon wafer, and a first glass substrate 1002 and a second glass substrate 1003 are joined to a silicon wafer-like silicon substrate 1001. After that, the cutting device such as a dicer is used to cut and cut the acceleration sensor 1000 to manufacture. When the acceleration sensor 1000 is cut out with a dicer or the like, cutting is performed while flowing water. However, in the case of an acceleration sensor in which the inside of the capacitor is sealed, water does not enter the capacitor even when the water flows. So there was no problem.
[0005]
[Problems to be solved by the invention]
However, in the case of an acceleration sensor or the like that opens the atmosphere without closing the inside of the capacitor, there is a problem that water when cutting by the cutting device enters the capacitor together with chips and the like.
[0006]
An object of the present invention is to provide a method for manufacturing a physical quantity detector that can be suitably cut out from a silicon wafer or the like even in an open-to-atmosphere type physical quantity detector.
[0007]
[Means for Solving the Problems]
To solve the above problems, the following means are provided. The numbers in parentheses indicate the reference numerals of the corresponding components in the embodiment.
According to the first aspect of the present invention, the inside of the capacitor formed by the movable electrode plate 21 movably supported by the elastic portion 22 and the fixed electrode plates 11 and 31 disposed at a position facing the movable electrode plate. A method for manufacturing a physical quantity detector (for example, an acceleration sensor chip 1) that is released to the atmosphere and detects any physical quantity of displacement, velocity, or acceleration of a measured object based on the capacitance of the capacitor,
Forming the movable electrode plate on the silicon substrate 102, forming the fixed electrode plate on the glass substrates 101 and 103, and providing a groove M at a predetermined position of the silicon substrate along the width direction;
Next, the movable electrode plate and the fixed electrode plate face each other, a step of anodically bonding the silicon substrate and the glass substrate,
Next, a step of making a cut in the glass substrate along the width direction at a position corresponding to the groove to provide a glass cut (for example, a first cut K1);
Next, a step of cutting off the silicon substrate and a part of the glass substrate along the groove and the glass cut portion,
It is characterized by having.
[0008]
According to the first aspect of the present invention, in the physical quantity detector of the open-to-atmosphere type, after the silicon substrate and the glass substrate are anodically bonded, a part of the silicon substrate and the glass substrate is cut along the groove and the glass cut portion. Since the cutting can be performed, the physical quantity detector can be cut out without water or chips entering the capacitor.
[0009]
According to the second aspect of the present invention, the inside of the capacitor formed by the movable electrode plate 21 supported to be displaceable by the elastic portion 22 and the fixed electrode plates 11 and 31 arranged at a position facing the movable electrode plate. A method for manufacturing a physical quantity detector (for example, an acceleration sensor chip 1) that is released to the atmosphere and detects any physical quantity of displacement, velocity, or acceleration of a measured object based on the capacitance of the capacitor,
The movable electrode plate is formed on a silicon substrate 102, the fixed electrode plate is formed on first and second glass substrates 101 and 103, and a groove M is formed at a predetermined position on the silicon substrate along a width direction. A first step of providing;
Next, a second step of anodically bonding the silicon substrate and the first and second glass substrates so that the movable electrode plate and the fixed electrode plate face each other,
Next, a cut is made in the outer surface of the first glass base at a position corresponding to the groove along the width direction to form a first cut K1, and the cut is longer than the first cut. A third step of forming cuts along the width direction to form second cuts (K21, K22) on the outside in the direction;
A fourth step of making cuts in the outer surface of the second glass substrate along the width direction at positions corresponding to the second cuts to provide third cuts (K31, K32); and A fifth step of cutting along the second cut portion and the third cut portion to cut off a part of the silicon base and the first and second glass bases;
Next, a sixth step of bending along the groove and the first cutout to cut off a part of the silicon substrate and the first glass substrate,
It is characterized by having.
[0010]
Here, the order in which the notches are formed in the third step is arbitrary. Further, the order of the third step and the fourth step may be reversed.
According to the second aspect of the present invention, after the silicon substrate and the first and second glass substrates are anodically bonded, the silicon substrate and the second substrate are formed along the second cut portion and the third cut portion. 1. A cutting device that uses water because a part of the second glass base is cut off, and then a part of the silicon base and the first glass base is cut along the groove and the first cut part. Can be used to cut the silicon substrate and the glass substrate without using the same, so that the physical quantity detector can be cut out without water or chips entering the capacitor, and the anode of the second glass substrate can be cut out. Part of the bonding surface can be exposed.
[0011]
According to a third aspect of the present invention, in the method for manufacturing a physical quantity detector according to the second aspect,
The cutting is performed such that a gap a is formed between the cut portion (for example, the thin plate portion 24) of the silicon base cut by the sixth step and the second glass base facing the cut portion. The thickness of the portion is formed thinner than the thickness of the other silicon substrate.
[0012]
According to the third aspect of the present invention, the cut portion of the cut portion is formed such that a gap is formed between the cut portion of the silicon base cut in the sixth step and the second glass base facing the cut portion. Since the plate thickness is formed smaller than the plate thickness of the other silicon substrates, when a force is applied to the groove and the second cut portion in the sixth step, the first glass substrate and the silicon substrate are in the gap. It is easy to bend and bend.
[0013]
According to a fourth aspect of the present invention, in the method for manufacturing a physical quantity detector according to the second or third aspect,
The first step includes forming electrode pads 13a, 14a, 15a, 16a, and 17a on the glass substrate exposed in the sixth step.
[0014]
According to the fourth aspect of the present invention, in the first step, the electrode pads are formed on the glass substrate exposed in the sixth step, so that the steps after the anodic bonding are simplified, and the manufacture is facilitated.
[0015]
The invention according to claim 5 is a method for manufacturing a physical quantity detector according to any one of claims 2 to 4,
The method may further include a step of forming islands (for example, islands 4 and 5) on the silicon substrate separated from the silicon substrate by the sixth step.
[0016]
According to the fifth aspect of the present invention, since the island portion separated from the silicon substrate is formed by the sixth step, the formation of the island portion is easier than in the case where the island portion is formed separately.
In addition, at the time of anodic bonding, since it is integrated with the silicon substrate, it is not necessary to provide a short wiring for making the potential between the electrode plates equal to prevent sticking of the movable electrode plates.
[0017]
The invention according to claim 6 is a method for manufacturing a physical quantity detector according to claim 5,
The step of forming the island portion includes:
A first gap penetrating in the thickness direction from the widthwise end toward the center of the longitudinal direction with respect to the groove, and a second gap extending from the tip of the first gap to the groove and penetrating in the thickness direction. And a step of forming the gap.
[0018]
According to the invention described in claim 6, in the silicon substrate, a first gap penetrating in the thickness direction from the widthwise end to the center is formed closer to the center in the longitudinal direction than the groove, and the first gap is formed. Since the second gap penetrating in the thickness direction from the tip of the gap to the groove is formed, an island separated from the silicon substrate can be formed by the sixth step, and the formation of the island is easy. It becomes.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 4 by taking a capacitance type acceleration sensor as an example of a physical quantity detector.
As shown in FIGS. 1 and 2, a capacitance type acceleration sensor chip (physical quantity detector) 1 includes a silicon substrate 102 disposed at the center, and two first glasses sandwiching the silicon substrate 102 from both upper and lower sides. The substrate 101 and the second glass substrate 103 are each formed by anodic bonding. Most of the silicon substrate 102 is constituted by a main body 20 made of silicon. The main body 20 has an elastic portion 22 formed in a leaf spring shape, and can be displaced in the thickness direction by the elastic portion 22. And a movable electrode plate 21 having a circular shape in a plan view and supported integrally by etching.
[0020]
On the upper first glass substrate 101, a gap (gap) of several microns is secured at a position facing the movable electrode plate 21 so that the first fixed electrode plate 11 can be used for vapor deposition or sputtering. The film is formed by the method.
The first fixed electrode plate 11 matches the area occupied by the movable electrode plate 21 and the elastic portion 22 in a projection view. The first fixed electrode plate 11 and the movable electrode plate 21 form a first capacitor.
From the first fixed electrode plate 11, planar L-shaped first detection wires 12, 12 made of an alloy of titanium and platinum extend toward the projection region of each of the islands 4, 5 of the silicon substrate 102. Is established.
[0021]
On the other hand, on the lower glass substrate 103, a gap of several microns is secured at a position facing the movable electrode plate 21, and the second fixed electrode plate 31 is formed by a method such as evaporation or sputtering. Is filmed.
The second fixed electrode plate 31 matches the area occupied by the movable electrode plate 21 and the elastic portion 22 in a projection view. The second fixed electrode plate 31 and the movable electrode plate 21 form a second capacitor.
[0022]
The glass substrate 103 is provided with an extension 33 extending beyond the upper glass substrate 101 and the silicon substrate 102, and five electrode pads 13 a, 14 a, 15 a, 16 a, and 17 a are provided on the upper surface of the extension 33. Have been.
From the second fixed electrode plate 31, a plane L-shaped second detection wiring 32 made of an alloy of titanium and platinum is connected to the electrode pads 14a and 15a.
[0023]
At the corners of the silicon substrate 102 on the side of the electrode pads 13a and 17a, there are provided silicon islands 4 and 5 for taking out electrodes whose two end surfaces are flush with the end surface of the silicon substrate 102. I have. Each of the island portions 4 and 5 is arranged so as not to contact with the other island portion and the main body portion 20, and is therefore electrically insulated from the other island portion and the main body portion 20.
Further, on the second glass substrate 103 side of the silicon substrate 102, ventilation holes 23 serving as electrode passages for preventing the second detection wiring 32 from contacting the silicon substrate 102 are provided. The vent holes 23 open the inside of the capacitor to the atmosphere.
[0024]
The electrode pads 13a and 17a are electrically connected to the first fixed electrode plate 11 via the first detection wiring 12, and the electrode pads 15a are electrically connected to the second fixed electrode plate 31. The electrode pad 16a is electrically connected to the movable electrode plate 21 via the main body 20.
The electrode pads 13a, 14a, 15a, 16a, 17a are connected to an external substrate by wire bonding or the like.
[0025]
As shown in FIG. 3, the elastic portion 22 is provided with a recess inside the surface of the movable electrode plate 21 or provided with a stopper 21a. 21 is prevented from sticking.
Alternatively, a hole may be formed in a part of the movable electrode plate 21 to allow communication between the first capacitor and the second capacitor.
[0026]
Next, a method of manufacturing the capacitance type acceleration sensor 1 will be described below with reference to FIGS.
The method of manufacturing the capacitance type acceleration sensor 1 includes a pre-process for individually processing each of the first glass substrate 101, the second glass substrate 103, and the silicon substrate 102, and a post-process after anodic bonding. Can be roughly classified. For convenience, the direction in which the electrode pads 13a to 17a are arranged side by side with respect to the base surface is defined as the width direction, and the direction perpendicular to the width direction is defined as the longitudinal direction.
[0027]
First, the pre-process will be described.
On the outer side in the longitudinal direction of a portion to be the groove portion M of the silicon substrate 102, a thin plate portion 24 whose thickness is reduced by wet etching the lower surface side is formed. The thin plate portion 24 becomes a cut portion to be cut later. Then, the movable electrode plate 21 and the elastic portion 22 are integrally formed on the silicon substrate 102 by dry etching (first step). At this time, a groove M is formed at a predetermined position of the silicon substrate 102 from the lower surface thereof along the width direction.
[0028]
Further, in the silicon substrate 102, a first gap b penetrating in the thickness direction from both ends 1a in the width direction toward the center in the width direction at the center in the longitudinal direction from the groove M, and a tip of the first gap b. , And a second gap c which reaches the groove M and penetrates in the thickness direction is integrally formed by dry etching. That is, the gap b and the gap c form an L-shaped gap penetrating the silicon substrate 102 in the thickness direction.
[0029]
On the other hand, the fixed electrode plate 11 is formed on the lower surface of the first glass substrate 101 by vapor deposition, sputtering, or the like, and the fixed electrode plate 31 is similarly formed on the upper surface of the second glass electrode plate 103 (first step). At this time, the electrode pads 13a, 14a, 15a, 16a, and 17a are simultaneously formed on the second glass substrate 103 (first step).
Note that the processing order in the preceding step is arbitrary, and does not necessarily have to be the order described above.
[0030]
Next, the post-process will be described.
First, as shown in FIG. 3A, the silicon substrate 102, the first glass substrate 101, and the second glass substrate 102 are anodically bonded so that the movable electrode plate 21 and the fixed electrode plates 11, 31 face each other. (Second step).
Next, a cut is made in the first glass base 101 at a position corresponding to the groove M of the silicon base 102 along the width direction of the first glass base 101 to provide a first cut K1 (third cut). Process). Further, two second cut portions K21 and K22 are provided by making cuts along the width direction outside the first cut portion K1 in the longitudinal direction (third step).
The order in which the cuts are formed in the third step is arbitrary, and is not necessarily the order described above.
[0031]
Further, cuts are made in the second glass substrate 103 at positions corresponding to the second cuts K21, K22 along the width direction to provide third cuts K31, K32 (fourth step). .
[0032]
Next, the substrate is bent along the second cuts K21 and K22 and the third cuts K31 and K32, and a part of the silicon base 102, the first glass base 101, and the second glass base 103 (FIG. 3 (a) (1) is excised (fifth step). Then, as shown in FIG. 3B, the gap a is exposed.
[0033]
Next, a part of the silicon substrate 102 and the first glass substrate 101 ((2) in FIGS. 3A and 3B) is cut along the first cut portion K1 and the groove portion M (sixth step). ). As a result, the electrode pads 13a, 14a, 15a, 16a, and 17a formed on the upper surface of the glass substrate 103 are exposed (see FIG. 3C).
In addition, the islands 4 and 5 are insulated from the silicon substrate 102 by the sixth step. In addition, the processing order in the above-mentioned post-process does not necessarily have to be the order described above, and may be appropriately changed.
In the subsequent process, a cut is made also in the longitudinal direction of the glass bases 101 and 103 of the capacitive acceleration sensor 1 and cut along the cut, thereby forming a large silicon base with the glass base being anodically bonded. A step of cutting out each of the capacitive acceleration sensors 1 from is also performed.
[0034]
According to the method of manufacturing the acceleration sensor chip 1 according to the present invention described above, after the silicon substrate 102 is anodically bonded to the first glass substrate 101 and the second glass substrate 103, the second cut portion K21 is formed. , K22 and a part of the silicon substrate 102, the first glass substrate 101, and the second glass substrate 103 along the third cuts K31 and K32, and then the first cut K1. Since the silicon substrate 102 and a part of the first glass substrate 101 are cut off along the groove M, the silicon substrate 102 and the glass substrates 101 and 103 can be cut without using a cutting device using water. As a result, the acceleration sensor chip 1 can be cut out without water or chips entering the capacitor, and a part of the anode bonding surface of the second glass substrate 103 can be removed. It can be issued.
[0035]
At this time, since the gap a is formed between the silicon substrate 102 to be cut and the second glass substrate 103, when a force is applied to the first cut portion K1 and the groove portion M, the first glass The base 101 and the silicon base 102 are easily bent into the gap a and easily cut off.
In addition, since the electrode pads 13a to 17a are formed on the upper surface of the second glass substrate 103 exposed in the sixth step before the anodic bonding, the steps after the anodic bonding are simplified, and the manufacturing becomes easy.
[0036]
In addition, since the island portions 4 and 5 separated from the silicon substrate 102 are formed by the sixth step, manufacturing is easier as compared with a case where island portions are separately formed.
In particular, in the silicon substrate 104, at a position on the center side in the longitudinal direction from the groove portion M, the first gap b in the thickness direction toward the center, and from the tip of the first gap b to the fourth cut portion K4. Since the second gap c in the thickness direction that reaches is formed, the islands 4 and 5 are integrated with the silicon substrate 102 before the sixth step, and the islands can be separated by the sixth step. Thus, the formation of the island portions 4 and 5 becomes easy.
In addition, at the time of anodic bonding, since it is integrated with the silicon substrate 102, it is not necessary to provide a short wiring for setting the potential between the electrode plates to an equal potential in order to prevent sticking of the movable electrode plate 21.
[0037]
As described above, the capacitive acceleration sensor to which the present invention is applied has been described, but the technical idea of the present invention is not limited to this. For example, the following can be said to be equivalent to the present invention.
For example, the design can be changed so as to detect a pressure and other physical quantities other than the acceleration. This can be easily realized by configuring the movable electrode plate 21 to be displaced due to an external pressure or other physical quantity.
Further, the capacitance-type physical quantity sensor 1 according to the present invention is also applicable to an inclinometer.
[0038]
【The invention's effect】
According to the first aspect of the present invention, in the physical quantity detector of the open-to-atmosphere type, after the silicon substrate and the glass substrate are anodically bonded, a part of the silicon substrate and the glass substrate is cut along the groove and the glass cut portion. Since it can be cut, the silicon substrate and the glass substrate can be cut without using a cutting device that uses water, and the physical quantity detector is cut out without water or chips entering the capacitor. be able to.
[0039]
According to the second aspect of the present invention, after the silicon substrate and the first and second glass substrates are anodically bonded, the silicon substrate and the second substrate are formed along the second cut portion and the third cut portion. 1. A cutting device that uses water because a part of the second glass base is cut off, and then a part of the silicon base and the first glass base is cut along the groove and the first cut part. Can be used to cut the silicon substrate and the glass substrate without using the same, so that the physical quantity detector can be cut out without water or chips entering the capacitor, and the anode of the second glass substrate can be cut out. Part of the bonding surface can be exposed.
[0040]
According to the third aspect of the present invention, the cut portion of the cut portion is formed such that a gap is formed between the cut portion of the silicon base cut in the sixth step and the second glass base facing the cut portion. Since the plate thickness is formed smaller than the plate thickness of the other silicon substrates, when a force is applied to the groove and the second cut portion in the seventh step, the first glass substrate and the silicon substrate are in the gap. It is easy to bend and bend.
[0041]
According to the fourth aspect of the present invention, in the first step, the electrode pads are formed on the glass substrate exposed in the sixth step, so that the steps after the anodic bonding are simplified, and the manufacture is facilitated.
[0042]
According to the fifth aspect of the present invention, since the island portion separated from the silicon substrate is formed by the sixth step, the formation of the island portion is easier than in the case where the island portion is formed separately.
In addition, at the time of anodic bonding, since it is integrated with the silicon substrate, it is not necessary to provide a short wiring for making the potential between the electrode plates equal to prevent sticking of the movable electrode plates.
[0043]
According to the invention as set forth in claim 6, in the silicon substrate, the first gap penetrating in the thickness direction from the widthwise end toward the center is formed closer to the center in the longitudinal direction than the groove, and the first gap is formed. Since the second gap penetrating in the thickness direction extending from the leading end of the gap to the groove is formed, an island separated from the silicon substrate can be formed in the sixth step, and the formation of the island is easy. It becomes.
[Brief description of the drawings]
FIG. 1 is a perspective view schematically showing a schematic configuration of a capacitance type acceleration sensor.
FIG. 2 is an exploded perspective schematic view of the capacitance type acceleration sensor of FIG.
FIG. 3 is a front view for explaining a manufacturing process of the capacitive acceleration sensor.
FIG. 4 is a left side view (a) and a plan view (b) of the capacitance type acceleration sensor.
FIG. 5 is a cross-sectional view showing a capacitance type acceleration sensor according to the related art.
[Explanation of symbols]
1 acceleration sensor chip (physical quantity detector)
4, 5 island part 11 1st fixed electrode plate (fixed electrode plate)
13a, 14a, 15a, 16a, 17a Electrode pad 20 Main body 21 Movable polar plate (movable polar plate)
22 elastic part 23 vent hole 24 thin plate part 31 second fixed electrode plate (fixed electrode plate)
101 glass base 102 silicon base 103 glass base K1 first cuts K21, K22 second cuts K31, K32 third cuts M groove a gap b first gap c second gap

Claims (6)

The inside of a capacitor formed by a movable electrode plate displaceably supported by an elastic portion and a fixed electrode plate disposed at a position facing the movable electrode plate is opened to the atmosphere, and based on the capacitance of the capacitor. Displacement of the measured object, speed, a method of manufacturing a physical quantity detector for detecting any physical quantity of acceleration,
Forming the movable electrode plate on a silicon substrate, forming the fixed electrode plate on a glass substrate, and providing a groove along a width direction at a predetermined position of the silicon substrate;
Next, the movable electrode plate and the fixed electrode plate face each other, a step of anodically bonding the silicon substrate and the glass substrate,
Next, a step of providing a glass cut portion by making a cut along the width direction at a position corresponding to the groove, on the glass base,
Next, bending the silicon substrate and a part of the glass substrate by bending along the groove and the glass cut portion,
A method for manufacturing a physical quantity detector, comprising: The inside of a capacitor formed by a movable electrode plate displaceably supported by an elastic portion and a fixed electrode plate disposed at a position facing the movable electrode plate is opened to the atmosphere, and based on the capacitance of the capacitor. Displacement of the measured object, speed, a method of manufacturing a physical quantity detector for detecting any physical quantity of acceleration,
A first step of forming the movable electrode plate on a silicon substrate, forming the fixed electrode plate on first and second glass substrates, and providing a groove along a width direction at a predetermined position of the silicon substrate; ,
Next, a second step of anodically bonding the silicon substrate and the first and second glass substrates so that the movable electrode plate and the fixed electrode plate face each other,
Next, a cut is made along the width direction at a position corresponding to the groove on the outer surface of the first glass substrate to form a first cut, and the first cut is formed in a longitudinal direction more than the first cut. A third step of forming cuts on the outside along the width direction to form second cuts;
A fourth step of making a cut in the second glass substrate along the width direction at a position corresponding to the second cut to provide a third cut;
Next, a fifth step of cutting the silicon substrate and a part of the first and second glass substrates by bending along the second cut portion and the third cut portion,
Next, a sixth step of bending along the groove and the first cutout to cut off a part of the silicon substrate and the first glass substrate,
A method for manufacturing a physical quantity detector, comprising: The method for manufacturing a physical quantity detector according to claim 2,
The thickness of the cut portion is changed to another silicon base so that a gap is formed between the cut portion of the silicon base cut by the sixth step and the second glass base facing the cut portion. A method for producing a physical quantity detector, characterized in that the physical quantity detector is formed to be thinner than the plate thickness of the physical quantity detector. The method for manufacturing a physical quantity detector according to claim 2 or 3,
The method of manufacturing a physical quantity detector, wherein the first step includes a step of forming an electrode pad on an exposed portion of the second glass substrate exposed in the sixth step. The method for manufacturing a physical quantity detector according to any one of claims 2 to 4,
A method for manufacturing a physical quantity detector, comprising a step of forming an island portion separated from the silicon substrate by the sixth step on the silicon substrate. The method for manufacturing a physical quantity detector according to claim 5,
The step of forming the island portion includes:
A first gap penetrating in the thickness direction from the widthwise end toward the center of the longitudinal direction with respect to the groove, and a second gap extending from the tip of the first gap to the groove and penetrating in the thickness direction. And a step of forming a physical gap detector.

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