JP2004093705A - Mask pattern correction method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce constriction while suppressing corner rounding of a pattern having a line width wider than before by an easy method. <P>SOLUTION: The mask pattern is corrected with two blocks which are a 1st block 2 incorporated at least in a corner for correction and a 2nd block 5 correcting a corner outline part of the mask pattern. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for correcting a mask pattern, and more particularly to a serif for easily and accurately correcting a mask pattern provided on an exposure mask based on rule-based proximity effect correction (OPC: Optical Proximity Correct). ) Relates to a method of correcting a mask pattern which is characterized by
[0002]
[Prior art]
With the advancement of miniaturization of semiconductor devices, the demand for miniaturization of semiconductor manufacturing equipment has been continually continued.In recent years, a pattern having a line width smaller than the wavelength of an exposure light source used in a semiconductor device manufacturing process has been required. It became so.
[0003]
Along with this, the difference in the shape of the exposure mask used in the exposure process and the transfer pattern obtained by using the exposure mask, that is, the shape of the resist pattern has become remarkable. This will be described using FIG.
[0004]
See FIGS. 13A and 13B
FIG. 13A shows a design pattern, and A ₂₁ , A ₂₂ Has a line width of 140 nm and A ₂₃ , A ₂₄ Indicates the case where the line width is 110 nm.
FIG. 13B shows a transfer pattern of the resist when exposed and developed using the exposure mask according to the design pattern shown in FIG. 13A, in which corner rounding is remarkably generated.
For example, bulging occurs at inner corners or depressions, and rounding occurs at outer angles or projections.
[0005]
Such a difference in shape is the influence of the proximity effect, and one method of correcting the proximity effect is proximity effect correction (OPC). In particular, the difference in the shape of the convex portion and the concave portion of the pattern is mainly called serif. Since a corrected mask pattern was manufactured by introducing a correction pattern and performing appropriate logical processing, and the corrected mask pattern was used in the exposure process, a transfer pattern by the conventional correction pattern exposure will be described with reference to FIG. (If necessary, see Japanese Patent Application Laid-Open No. 2001-100389).
[0006]
See FIG. 14 (a)
FIG. 14A shows a square pattern, that is, a mask pattern in which the design pattern is corrected using the correction blocks 21 and 22, and the overlapping portion is removed by using the correction block 21 in the concave portion of the design pattern. On the other hand, in the convex portion of the design pattern, the non-overlapping portion of the correction block 22 is compensated by using the correction block 22.
[0007]
See FIG. 14 (b)
FIG. 14B shows a transfer pattern of the resist when exposed and developed using the exposure mask according to the design pattern shown in FIG. 14A, and corner rounding is performed by removing or filling corners of the mask pattern. Has been improved.
[0008]
According to this conventional correction method, two or more correction rectangles (serifs) are introduced at appropriate positions of a convex portion or a concave portion on a mask pattern in accordance with a rule specified in advance, and necessary to obtain a desired resist shape. This is based on rule-based OPC aiming at realizing a mask pattern at high speed and with high fidelity, and is a method of acquiring a corrected mask pattern figure according to a predetermined value or rule.
[0009]
[Problems to be solved by the invention]
However, the correction blocks 21 and 22 used in the conventional correction technique have a size dependence of the correction amount, and a defect occurs in a correction block other than the category.
In other words, when a quadrangle such as the correction blocks 21 and 22 is applied to various pattern line widths in order to suppress or reduce the influence of the rounding and the tip retreat caused by the proximity effect in photolithography, the suppression may be suppressed in some cases. Alternatively, the effect of the reduction is higher than expected, causing a problem that a corner portion of a target pattern shape is broken, disconnected, or short-circuited.
[0010]
For example, when the correction amount is too small, the purpose of the correction cannot be achieved faithfully, and when the correction amount is too large, defects such as disconnection and the like have occurred due to being confined to the mask pattern and eventually the resist pattern. .
[0011]
Again, see FIG.
Considering that the sizes of the correction blocks 21 and 22 are fixed and applied to patterns of various line widths, A ₃₁ , A ₃₂ As shown in the figure, the correction amount is compared with the effective mask pattern line width. ₃₃ , A ₃₄ When the correction blocks 21 and 22 of the same size are applied to a relatively thin mask pattern as shown in FIG. 12, the degree of suppression of the proximity effect becomes excessive, the line width becomes thinner than the design value, and constriction and pattern short-circuiting occur. I was invited.
[0012]
This is A ₃₁ , A ₃₂ The correction blocks 21 and 22 having the line width optimized for the pattern in the 140 nm generation shown in FIG. ₃₃ , A ₃₄ This is the result of applying this method as is.
[0013]
See FIG.
Referring to FIG. 7, the rounding amount is significantly improved as compared with the case without correction, but the line width is smaller than that of the pattern A. ₃₃ , A ₃₄ When the thickness is 110 nm, the value becomes minus, the correction becomes excessive, and problems such as an increase in wiring resistance occur.
[0014]
See FIG.
In addition, referring to FIG. 8, the maximum reduction amount from the design value, that is, the maximum constriction amount is about −10 nm, and as is apparent from the figure, compared with the 180 nm generation and the 140 nm generation. It is clear that large constriction occurs in the 110 nm generation, and the correction is excessive.
Here, for convenience, it is assumed that the line width of the current generation is 140 nm, the line width of the next and subsequent generations is 110 nm, and the line width of the old generation is 180 nm.
[0015]
Even in this generation's manufacturing technology, the old generation is always mixed, and the next generation, the next generation's development elements and the finer pattern than the latest generation's minimum line width for monitoring purposes must be included. However, conventionally, the optimal values of the correction blocks 21 and 22 have been designed based on the rules of the current generation, which is the most disciplined. Over-correction is applied to the rules of the next generation, resulting in squeezing.
[0016]
In addition, when there are patterns that are close to each other due to the application of the correction blocks 21 and 22, an undesired connection portion may be formed. This will be described with reference to FIG. .
See FIGS. 15A and 15B
FIG. 15A shows a design pattern, and FIG. 15B shows a transfer pattern when exposure is performed using an exposure mask according to the design pattern shown in FIG.
Pattern B ₂₅ , B ₂₆ As shown in (1), with the miniaturization of the semiconductor device, the retreat of the tip caused by the proximity effect cannot be ignored.
[0017]
To correct this, the design data is converted to A using a rectangular correction pattern at the corner at the tip of the rectangular pattern. ₃₅ , A ₃₆ Is corrected to a simple rectangular pattern A ₃₅ In the case of, the transfer pattern B in which the tip retreat is suppressed ₃₅ Is obtained.
[0018]
However, pattern A ₃₆ When there is an adjacent pattern that is perpendicular to the long side of the rectangular pattern as shown in FIG. ₃₆ As shown in (1), there is a problem that a connection portion remains between the rectangular pattern and the adjacent pattern, and the two patterns are not separated.
[0019]
Further, since it has been proposed to further perform fine correction in consideration of distortion and deformation at the time of manufacturing a photomask, a description will be given with reference to FIG. 16 (see Japanese Patent Application Laid-Open No. 2001-324794 if necessary). .
See FIG. 16 (a)
The four corners of the rectangular design pattern 41 are filled with the same primary correction block 42 as the conventional correction pattern, and the primary correction block 42 is used to correct distortion during photomask manufacturing. These three corners are supplemented with minute secondary correction blocks 43, whereby the occurrence of rounding at the corners is further suppressed.
[0020]
See FIG. 16 (b)
In the case of FIG. 16B, in order to compensate for the narrowing of the rough portion due to the pattern density, a large portion is provided above the central rectangular design pattern 51, that is, a portion where no adjacent pattern exists. A secondary correction block 55 is provided at the corner to compensate for the large primary correction block 54 and to compensate for distortion and deformation of the photomask at the time of manufacturing the photomask. In addition, the secondary correction block 56 is supplemented.
[0021]
In addition, a small primary correction block 54 and a secondary correction block 55 are used to perform a supplementary process even at the bottom of the design pattern 51, and the primary correction block 54 is also used for adjacent rectangular design patterns 52 and 53. And a supplementary process by the secondary correction block 55 is performed.
[0022]
However, such a model-based OPC can obtain a faithful mask pattern figure based on a simulation technique. However, it is necessary to set appropriate calculation parameters and obtain a corrected mask pattern figure. Has a problem that it requires a considerably long calculation time.
[0023]
Therefore, an object of the present invention is to suppress corner rounding in a pattern having a wider line width than in the past by using a simple method, and to reduce constriction.
[0024]
[Means for Solving the Problems]
FIG. 1 is an explanatory diagram of the basic configuration of the present invention, and means for solving the problems in the present invention will be described with reference to FIG.
See FIG.
In order to achieve the above object, the present invention provides a method for correcting a mask pattern, comprising: a first block 2 for correcting the mask pattern so as to be incorporated at least inside the corner; and correcting the shape of a corner contour portion of the mask pattern. The correction is performed by two blocks of the second block 5 to be performed.
[0025]
In this manner, based on the rule base OPC that applies a common rule to the patterns of each generation, the first block 2 that is corrected so as to be incorporated inside the corners of the mask pattern, and the shape of the corner contour of the mask pattern By using the two blocks of the second block 5 that corrects, the rounding amount can be prevented from being excessively reduced, the rounding amount does not become negative, and the maximum amount of constriction can be reduced as much as possible.
[0026]
In the case of performing the above-described correction, when performing correction so as to be incorporated inside the corner of the mask pattern, exclusive processing with the design pattern 1 is performed using the first block 2 to form the first correction pattern 4, When correcting the shape of the corner contour portion of the mask pattern, the second block 5 is used to perform an exclusion process with the design pattern 1 to form a second correction pattern 6, and then the two mask patterns 4, 6 In this case, the correction mask pattern 7 may be formed by integrating the common parts.
[0027]
It is also desirable to correct the outside of the corner using the third block 3 incorporated outside the corner. In this case, the outline outside the corner is corrected by the second block 5.
In this case, it is desirable that the area of the first block 2 incorporated inside the corner is larger than the area of the third block 3 incorporated outside the corner.
[0028]
When correcting the outside of the corner, an additional process is performed using the third block 3 when forming the first correction pattern 4 outside the corner, and the second correction pattern 6 is formed. When forming, the correction mask pattern 7 may be formed by performing an additional process using the second block and integrating the common portion of the two mask patterns 4 and 6.
[0029]
When correcting the tip corner of a mask pattern having at least the tip having a long-sided rectangular portion, the shape of the first block 2 incorporated in the tip corner and the shape of the corner contour of the tip corner are determined. The correction may be performed by the second block 5 to be corrected, and thereby, it is possible to prevent a retreat of the front end of the corner or a short circuit between the adjacent pattern.
[0030]
Alternatively, a composite correction block in which the relatively large first block 2 and the relatively small second block 5 are overlapped is formed in advance, and the inside and outside of the corner of the mask pattern are formed using the composite correction block. It may be corrected.
[0031]
The logical processing in this case can be a single logical processing of performing exclusive processing using the composite correction block when correcting the inside of the corner of the mask pattern, and the process is simplified.
[0032]
In addition, such a composite correction block may be used to correct a tip corner of a mask pattern having at least a tip having a rectangular shape with a long side.
[0033]
The positional relationship between the first block 2 and the second block 5 in the above processing may be such that the diagonal of the first block 2 and the diagonal of the second block 5 partially overlap each other. Desirably, thereby, the shape of the corner portion can be appropriately corrected without excessively correcting the shape.
[0034]
BEST MODE FOR CARRYING OUT THE INVENTION
Here, a method of correcting a mask pattern according to the first embodiment of the present invention will be described with reference to FIGS.
See FIG.
FIG. 2 is a flowchart of a method of correcting a mask pattern according to the first embodiment of the present invention. First, OPC for the purpose of line width correction is performed on an original design data based on rule-based OPC. After the first step described above, a second step is performed in which the large angle correction block 12 is used to perform an exclusion process for an inner angle and an outer angle is used for an additional process. Then, a small correction block 13 is used. In the case where the outside angle is processed, mask drawing data is produced by a third step of adding processing.
[0035]
See FIG.
FIG. 3 is an explanatory diagram of the correction pattern and the amount of overlap used in the first embodiment of the present invention. In consideration of the exposure condition of the current generation of 140 nm, the small correction block 13 and the large correction block 12 are different from each other. Length d of one side of superimposed correction block 11 ₁ For the inner angle, 80 to 120 nm is appropriate, and for the outer angle, 40 to 60 nm is appropriate.
[0036]
The size of the correction block 11 in this case is set so as to be equal to the size of the conventional correction patterns 21 and 22, and the overlapping amount with the design pattern is 15 in the case of the inside angle. The thickness is suitably from 35 to 35 nm, and in the case of an external angle, from 30 to 40 nm.
[0037]
For example, although it is necessary to consider the MASK manufacturing technology for a semiconductor device, the size of the small correction block 13 is set to d ₃ = 20 to 30 nm, for example, 30 nm (d ₃ = 30 nm), while the size of the large correction block 12 is 85 □ nm (d ₂ = 85 nm), 45 nm (d ₂ = 45 nm).
[0038]
See FIG.
FIG. 4 is an explanatory diagram of the amount of overlap of the correction patterns in the correction patterns used in the first embodiment of the present invention.
Regarding the large correction block 12, there are two factors for overlapping with the design pattern, and these are the amounts of overlap in the horizontal and vertical directions with respect to the corners. It is considered that the vertical overlap amount H is suitably H = 15 to 20 nm, and the horizontal overlap amount W is W = 75 to 95 nm.
[0039]
The optimum value for the inner angle for the three generations from 110 nm to 180 nm is such that the small correction block 13 of 30 nm □ is embedded in the corner portion and the large correction block 12 of 85 nm □ overlaps each other by 15 nm. It was determined that it was optimal to arrange them so that the total thickness was 100 nm.
[0040]
The optimum value of the correction pattern for the outer angle is such that the small correction block 13 of 30 nm square is embedded in the corner portion, and the large correction blocks 12 of 45 nm square are arranged so as to overlap each other by 15 nm so that the total is 60 nm. It was determined that it was optimal to do so.
[0041]
Next, with reference to FIG. 5, the definition of the rounding amount as an evaluation standard of the correction method of the present invention will be described. Here, for the sake of simplicity, the case of the inner angle, that is, the case of the inner serif, is described. Will be described.
See FIG.
As shown in the figure, rounding portions 16 and 17 bulging out of the design pattern 14 occur at the inner and outer corners of the transfer pattern 15. It is defined by the amount of change from the design value at a position 50 nm away from.
[0042]
See FIGS. 6A and 6B
FIG. 6A shows a design pattern, and A ₁₁ , A ₁₂ Has a line width of 140 nm and A _Thirteen , A ₁₄ Indicates the case where the line width is 110 nm.
FIG. 6B shows a transfer pattern of the resist when exposed and developed using the exposure mask according to the design pattern shown in FIG. ₁₁ , A ₁₂ , A _Thirteen , A ₁₄ Transfer pattern B corresponding to ₁₁ , B ₁₂ , B _Thirteen , B ₁₄ Is shown.
[0043]
See FIG.
FIG. 7 is an explanatory diagram of the rounding amount in the mask pattern correction method according to the first embodiment of the present invention. The rounding amount is reduced as compared with the rounding amount without correction that does not employ the correction shape. You can see that it is doing.
Further, compared to the conventional example using only a square correction pattern, a negative rounding amount did not occur, and there was a feeling that the degree of correction was gentle with respect to the 180 nm rule of the old generation.
[0044]
See FIG.
FIG. 8 is an explanatory diagram of the maximum amount of constriction in the mask pattern correction method according to the first embodiment of the present invention. However, a significant improvement was observed as compared with the conventional example in which a large amount of squeezing occurred.
[0045]
As described above, by combining the large correction block 12 and the small correction block 13 and applying them to the design pattern according to a predetermined rule, excessive correction is brought about in addition to the main purpose of reducing rounding. The constriction problem can be suppressed, and in addition, it can be applied to a wide line width.
[0046]
In addition, the size of the large correction block 12 and the small correction block 13 itself, and the size of the overlap between the large correction block 12 and the small correction block 13 can be adjusted. , 22 more easily, quickly, and faithfully.
[0047]
In addition, as described in FIG. 16 described above, with the miniaturization of the semiconductor device, the retreat of the tip due to the proximity effect has become a situation that cannot be ignored. ₃₆ As shown in (1), when there is a pattern facing at right angles to the long side, the correction shape has a negative effect, and the patterns are connected to each other.
[0048]
See FIGS. 9A and 9B
FIG. 9 shows a rectangular pattern A _Fifteen FIG. 9 (a) shows a design pattern, and FIG. 9 (b) shows a case where the mask pattern correction method of the first embodiment of the present invention is applied. 3 shows a transfer pattern of a resist when exposed and developed using an exposure mask according to the design pattern shown in FIG.
[0049]
FIG. 15B ₂₅ As shown in FIG. 9B, in the pattern before correction, the tip of the resist pattern receded due to the proximity effect caused by lithography. However, as shown in FIG. _Fifteen The retreat of the front end portion is greatly suppressed, and the method of using a plurality of correction blocks according to the present invention is effective only for the outer angle.
[0050]
See FIGS. 10A and 10B
FIG. 10 shows a rectangular pattern A _Fifteen A that faces at right angles to ₁₆ Is present, the mask pattern correction method according to the first embodiment of the present invention is applied to the rectangular pattern A. _Fifteen FIG. 10A shows a design pattern, and FIG. 10B shows exposure / development using an exposure mask according to the design pattern shown in FIG. 10A. 3 shows a transfer pattern of the resist in the case where the transfer is performed.
[0051]
As shown in FIG. _Fifteen The retreat of the tip of the pattern is greatly suppressed, and the pattern B ₁₆ It is understood that since the expansion portion at the bottom is small, connection / short circuit between the two is prevented, and by applying the correction pattern of the present invention, the adjacent pattern B ₁₆ Can be intentionally suppressed.
[0052]
Next, a second embodiment of the present invention will be described with reference to FIG.
See FIG.
FIG. 11 is a flowchart of a method of correcting a mask pattern according to the second embodiment of the present invention. First, OPC for the purpose of line width correction is performed on an original design data based on rule-based OPC. After the first step described above, by using the composite correction block 18 formed by using the large correction block 12 and the small correction block 13, a second step is performed in which exclusive processing is performed for an inner angle and additional processing is performed for an outer angle. Create mask drawing data.
[0053]
See FIG.
FIG. 12 is an explanatory diagram of a composite correction block used in the second embodiment of the present invention. The large correction block 12 and the small correction block 13 are overlapped so that their diagonals partially overlap. Thus, a composite correction block 18 is formed.
[0054]
In the second embodiment of the present invention, since the composite correction block 18 formed in advance is used, the logical processing at the time of correction can be performed only once, and the correction processing is further simplified.
[0055]
The embodiments of the present invention have been described above. However, the present invention is not limited to the configurations described in the embodiments, and various modifications are possible.
For example, in the description of the first embodiment, the logical processing is performed by using the large correction block to produce a correction mask pattern, and the logical processing is performed on the correction mask pattern by using the small correction block. Is performed to produce the final correction mask pattern, but the present invention is not necessarily limited to such a procedure.
[0056]
For example, after the logical processing using the large correction block and the logical processing using the small correction block for the design pattern are separately performed in parallel, the common area between both correction mask patterns is excluded at the inner corner. After the processing, the outer corners may be subjected to additional processing to generate a final correction mask pattern.
[0057]
Further, in each of the above embodiments, one small correction block is superimposed on one large correction block, but a plurality of small correction blocks are superimposed on one large correction block. They can be combined.
[0058]
In each of the above embodiments, the size of the small correction block is the same for both the inner angle and the outer angle. However, small correction blocks having different sizes may be used. It is.
[0059]
Further, in each of the above-described embodiments, the large correction block and the small correction block are squares. However, the present invention is not limited to squares, and rectangles may be used. A parallelogram pattern may be used according to the shape of the corner.
[0060]
Here, the detailed features of the present invention will be described again with reference to FIG. 1 again.
Again, see FIG.
(Supplementary Note 1) The correction is performed by two blocks, that is, a first block 2 that corrects the mask pattern so as to be incorporated at least inside the corner, and a second block 5 that corrects the shape of the corner contour of the mask pattern. A method for correcting the characteristic mask pattern.
(Supplementary Note 2) When performing correction in a form incorporated in the corner of the mask pattern, exclusive processing is performed using the first block 2, and when correcting the shape of the corner contour portion of the mask pattern, 2. The method of claim 1, further comprising performing an exclusion process using the second block 5, and then integrating the common portion of the two mask pattern areas.
(Supplementary note 3) The mask pattern correction method according to Supplementary note 1 or 2, wherein the outside of the corner is corrected by a third block 3 incorporated outside the corner of the mask pattern.
(Supplementary Note 4) The mask pattern correction method according to supplementary note 3, wherein the area of the first correction block is larger than the area of the third block.
(Supplementary Note 5) The first block 2 incorporated at the tip corner of the mask pattern having at least the tip having a long-sided rectangular portion, and the second block 5 for correcting the shape of the corner contour of the tip corner. A method for correcting a mask pattern, wherein the correction is performed.
(Supplementary Note 6) A mask pattern characterized in that at least the inside of a corner of the mask pattern is corrected by using a composite correction block in which a relatively large first block 2 and a relatively small second block 5 are overlapped. Correction method.
(Supplementary note 7) The mask pattern correction method according to supplementary note 6, wherein exclusive processing is performed using the composite correction block when correcting the inside of the corner of the mask pattern.
(Supplementary Note 8) For compound correction in which a relatively large first block 2 and a relatively small second block 5 are overlapped with a relatively large first block 2 at a top corner of a mask pattern having at least a top portion having a long-sided rectangular portion. A method for correcting a mask pattern, wherein the correction is performed using blocks.
(Supplementary note 9) The mask pattern correction method according to any one of Supplementary notes 1 to 8, wherein a diagonal line of the first block 2 and a diagonal line of the second block 5 partially overlap each other. .
[0061]
【The invention's effect】
According to the present invention, when the mask pattern is corrected, the first block for correcting the corner pattern inside and outside the corner and the second block for correcting the contour of the corner are used. It is possible to suppress or reduce the degree of corner rounding and tip retreat of the pattern due to the proximity effect brought about by lithography, thereby solving the problem caused by excessive suppression and reduction, and for a wider range of patterns than before. Therefore, the accuracy of the exposure step can be improved, and the performance of the semiconductor device can be greatly improved.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of a basic configuration of the present invention.
FIG. 2 is a flowchart of a mask pattern correction method according to the first embodiment of the present invention.
FIG. 3 is an explanatory diagram of a correction pattern and an overlap amount used in the first embodiment of the present invention.
FIG. 4 is an explanatory diagram of the amount of overlap of correction patterns in the mask pattern correction method according to the first embodiment of the present invention.
FIG. 5 is an explanatory diagram of a definition of a rounding amount by a mask pattern correction method according to the first embodiment of the present invention.
FIG. 6 is an explanatory diagram of a method of correcting a mask pattern according to the first embodiment of the present invention. .
FIG. 7 is an explanatory diagram of a rounding amount in the mask pattern correction method according to the first embodiment of the present invention.
FIG. 8 is an explanatory diagram of a maximum constriction amount in the mask pattern correction method according to the first embodiment of the present invention.
FIG. 9 is an explanatory diagram of the effect of improving the receding end portion of the rectangular pattern by the mask pattern correction method according to the first embodiment of the present invention.
FIG. 10 is an explanatory diagram of an effect of improving short-circuiting of mutually adjacent patterns by the mask pattern correction method according to the first embodiment of the present invention.
FIG. 11 is a flowchart of a mask pattern correction method according to the second embodiment of the present invention. is there.
FIG. 12 is an explanatory diagram of a composite correction block used for a mask pattern correction method according to a second embodiment of the present invention.
FIG. 13 is an explanatory diagram of a transfer pattern by conventional exposure without correction.
FIG. 14 is an explanatory diagram of a transfer pattern by conventional correction pattern exposure.
FIG. 15 is an explanatory diagram of the influence of a proximity pattern on exposure by a conventional correction pattern.
FIG. 16 is an explanatory diagram of another conventional mask pattern correction method.
[Explanation of symbols]
1 Design pattern
2 First block
3 Third block
4 First correction pattern
5 Second block
6 Second correction pattern
7 Correction mask pattern
11 Correction block
12 Large correction block
13 Small correction block
14 Design Pattern
15 Transfer pattern
16 Rounding part
17 Rounding part
18 Composite correction block
21 Correction block
22 Correction block
41 Design Pattern
42 Primary correction block
43 Secondary correction block
51 design patterns
52 design patterns
53 design patterns
54 Primary correction block
55 Secondary correction block
56 Secondary correction block

Claims (5)

The mask pattern is characterized in that the correction is performed by two blocks, that is, a first block that is corrected so as to be incorporated at least inside the corner of the mask pattern, and a second block that corrects the shape of the corner contour of the mask pattern. Correction method. Exclusive processing is performed using the first block when correcting in a form incorporated into the corner of the mask pattern, and the second block is corrected when correcting the shape of the corner contour of the mask pattern. 2. A method according to claim 1, wherein the exclusive processing is performed by using the mask pattern area, and then the common part of the two mask pattern areas is integrated. The correction is performed by a first block that is incorporated at a tip corner of a mask pattern having at least a tip having a long-sided rectangular portion, and a second block that corrects a shape of a corner contour of the tip corner. Correction method of the mask pattern to be used. A method of correcting a mask pattern, comprising correcting at least the inside of a corner of a mask pattern using a composite correction block in which a relatively large first block and a relatively small second block are overlapped. 5. The method according to claim 4, wherein when the inside of the corner of the mask pattern is corrected, exclusive processing is performed using the composite correction block.

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