JP2004079767A - Substrate washing apparatus and method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate washing apparatus which uses as small quantity of washing liquid as possible while increasing the uniformity of a washing treatment and suppressing damages to a substrate. <P>SOLUTION: The substrate washing apparatus comprises a spin base 10 which supports a substrate W, cylindrical spindle 16 attached vertically to the lower surface side of the spin base, a mechanism 26-32 for rotating the cylindrical spindle, an ultrasonic washing nozzle 46, and a nozzle moving means 48-52 for moving the ultrasonic washing nozzle along the front surface of the substrate. The ultrasonic washing nozzle 46 has a slender and rectangular discharge port whose longitudinal size is smaller than the radius of the substrate and discharges the washing liquid onto the front surface of the turning substrate, and is also equipped with an ultrasonic vibrator which emits ultrasonic waves toward the washing liquid to be discharged from the discharge port onto the front surface of the substrate. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an apparatus and a method for supplying a cleaning liquid to the surface of a substrate such as a semiconductor wafer and an optical disk substrate to clean the substrate in a single wafer system, and particularly to a substrate cleaning apparatus for applying ultrasonic vibration to the cleaning liquid to clean the substrate. And a substrate cleaning method.
[0002]
[Prior art]
When a cleaning liquid is supplied to the surface of a substrate, for example, a semiconductor wafer, and the wafers are cleaned one by one, by applying ultrasonic vibration to the cleaning liquid supplied to the wafer surface, the throughput in the cleaning process is increased. ing. In this case, an ultrasonic cleaning nozzle having an ultrasonic vibrator that emits ultrasonic waves toward the cleaning liquid discharged from the discharge port to the wafer surface is used. Conventionally, as the ultrasonic cleaning nozzle, a nozzle having a slit-shaped discharge port having a length approximately equal to the diameter of the wafer or a length equal to or larger than the radius of the wafer, and a nozzle having a discharge port narrowed in a spot shape are used.
[0003]
In a wafer cleaning apparatus provided with an ultrasonic cleaning nozzle having a slit-shaped discharge port, the cleaning liquid is uniformly discharged from the slit-shaped discharge port to the entire surface of the wafer so that a uniform cleaning process can be performed. . In addition, since the longitudinal dimension of the slit-shaped discharge port is large, the range of ultrasonic wave irradiation to the wafer can be widened, and the range of ultrasonic wave propagation can be widened. Therefore, there is an advantage that damage to the wafer due to ultrasonic waves can be suppressed.
[0004]
Further, in a wafer cleaning apparatus provided with an ultrasonic cleaning nozzle having a spot-shaped discharge port, the ultrasonic cleaning nozzle scans the entire surface of the wafer along the surface of the wafer to improve the uniformity of the cleaning process. . In this ultrasonic cleaning nozzle, since the discharge port is narrowed, only a small amount of the cleaning liquid, for example, 0.1 l / min to 1 l / min is discharged from the discharge port. For this reason, there is an advantage that the cleaning liquid can be effectively used and the amount of the cleaning liquid used can be reduced.
[0005]
[Problems to be solved by the invention]
However, in an ultrasonic cleaning nozzle having a slit-shaped discharge port, a slit-shaped discharge port having a large longitudinal dimension is formed, so that the nozzle is inevitably increased in size. Then, in order to favorably apply ultrasonic vibration to the cleaning liquid by the ultrasonic vibrator, it is necessary to fill the liquid reservoir inside the nozzle with the cleaning liquid and keep the vibrator in a state where the vibrator is always in contact with the liquid, A large amount, for example, 10 l / min to several tens l / min of the cleaning liquid flows out from the slit-shaped discharge port having a large longitudinal dimension. For this reason, a part of the cleaning liquid is wasted and the amount of the cleaning liquid used increases. In addition, since the ultrasonic vibrator becomes large, the ultrasonic cleaning nozzle is often used in a fixed state. When the ultrasonic cleaning nozzle is used in such a manner, the uniformity of the cleaning process is sufficiently improved. There is a problem that it is difficult to increase.
[0006]
On the other hand, in an ultrasonic cleaning nozzle having a spot-shaped discharge port, the discharge port is squeezed, and the propagation range of the ultrasonic wave is concentrated in spots on each part of the wafer surface, so that the wafer is easily damaged. And so on.
[0007]
The present invention has been made in view of the above circumstances, and a substrate cleaning apparatus and a substrate capable of suppressing consumption of a cleaning liquid, improving uniformity of a cleaning process, and suppressing damage to the substrate. It is an object to provide a cleaning method.
[0008]
[Means for Solving the Problems]
The invention according to claim 1 is a substrate cleaning apparatus for cleaning a substrate by supplying a cleaning liquid to the substrate, wherein the substrate supporting and rotating means for supporting and rotating the substrate has a longitudinal dimension larger than a radial dimension of the substrate. It has an elongated rectangular discharge port for discharging the cleaning liquid to the surface of the substrate that is reduced and supported by the substrate support / rotation means and rotated, and emits ultrasonic waves toward the cleaning liquid discharged from the discharge port to the substrate surface. An ultrasonic oscillator that emits, and an ultrasonic cleaning nozzle that includes a high-frequency oscillator that drives the ultrasonic oscillator, and a substrate that is rotated while being supported by the substrate supporting / rotating means. Nozzle moving means for moving along the surface of the nozzle.
[0009]
According to a second aspect of the present invention, in the substrate cleaning apparatus of the first aspect, the cleaning liquid is discharged from the discharge port of the ultrasonic cleaning nozzle to the surface of the substrate at a flow rate of 1.6 l / min to 6.5 l / min. It is characterized by doing so.
[0010]
According to a third aspect of the present invention, in the substrate cleaning apparatus according to the first or second aspect, a power controller for adjusting the ultrasonic power of the ultrasonic cleaning nozzle to 140 W or less is provided.
[0011]
The invention according to claim 4 is a substrate cleaning method for cleaning a substrate by supplying a cleaning liquid to the substrate, wherein the substrate is rotated and an elongated rectangular discharge port whose longitudinal dimension is smaller than the radial dimension of the substrate. While moving the ultrasonic cleaning nozzle having the ultrasonic cleaning nozzle along the surface of the substrate, the cleaning liquid to which ultrasonic vibration has been applied from the discharge port of the ultrasonic cleaning nozzle is supplied at a flow rate of 1.6 l / min to 6.5 l / min. It is characterized by discharging to the whole.
[0012]
According to a fifth aspect of the present invention, in the method for cleaning a substrate according to the fourth aspect, the cleaning liquid discharged from the discharge port of the ultrasonic cleaning nozzle to the surface of the substrate is collected.
[0013]
In the substrate cleaning apparatus according to the first aspect of the present invention, while the substrate is supported and rotated by the substrate supporting / rotating means, the ultrasonic cleaning nozzle is moved along the surface of the substrate by the nozzle moving means. Ultrasonic waves are emitted from the ultrasonic vibrator of the nozzle toward the cleaning liquid, and the cleaning liquid is discharged onto the substrate surface from the elongated rectangular discharge port of the ultrasonic cleaning nozzle. In this way, the surface of the substrate is cleaned with the cleaning liquid and ultrasonically cleaned. At this time, since the ejection port of the ultrasonic cleaning nozzle has an elongated rectangular shape, the propagation range of the ultrasonic wave to the substrate is expanded without being concentrated, so that damage to the substrate by the ultrasonic wave is suppressed. Further, since the elongated rectangular discharge port of the ultrasonic cleaning nozzle has a smaller longitudinal dimension than the radius of the substrate, the flow rate of the cleaning liquid flowing from the discharge port to the substrate surface is reduced, and the amount of the cleaning liquid used is suppressed. It becomes possible. Further, since the ultrasonic cleaning nozzle discharges the cleaning liquid to the surface of the substrate while moving along the surface of the substrate, it is possible to improve the uniformity of the cleaning process.
[0014]
In the substrate cleaning apparatus according to the second aspect of the present invention, while the ultrasonic cleaning nozzle moves along the surface of the substrate, the cleaning liquid is discharged from the discharge port to the substrate surface at a flow rate of 1.6 l / min to 6.5 l / min. As a result, the amount of the cleaning liquid used is reduced, and the uniformity of the cleaning process is improved.
[0015]
In the substrate cleaning apparatus according to the third aspect of the present invention, the ultrasonic power of the ultrasonic cleaning nozzle can be adjusted to 140 W at the maximum, and the cleaning effect can be sufficiently improved.
[0016]
According to the substrate cleaning method of the fourth aspect of the present invention, while the substrate is rotated, the ultrasonic cleaning nozzle is moved along the surface of the substrate, and the ultrasonic cleaning nozzle irradiates the ultrasonic wave with the elongated rectangular discharge. The cleaning liquid is discharged from the outlet onto the substrate surface. In this way, the surface of the substrate is cleaned with the cleaning liquid and ultrasonically cleaned. At this time, since the ultrasonic cleaning nozzle having an elongated rectangular discharge port is used, the propagation range of the ultrasonic wave to the substrate is expanded without being concentrated, so that damage to the substrate by the ultrasonic wave is suppressed. Also, an ultrasonic cleaning nozzle is used in which the longitudinal dimension of the discharge port is smaller than the radial dimension of the substrate, and the cleaning liquid is discharged from the discharge port to the substrate surface at a flow rate of 1.6 l / min to 6.5 l / min. Therefore, it is possible to reduce the amount of the cleaning liquid used. Further, since the ultrasonic cleaning nozzle discharges the cleaning liquid to the surface of the substrate while moving along the surface of the substrate, it is possible to improve the uniformity of the cleaning process.
[0017]
In the substrate cleaning method according to the fifth aspect of the present invention, the cleaning liquid discharged from the discharge port of the ultrasonic cleaning nozzle to the surface of the substrate is collected, so that the consumption of the cleaning liquid can be further reduced.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
[0019]
FIG. 1 is a schematic configuration diagram showing an example of an embodiment of the present invention and showing an essential part of a substrate cleaning apparatus by an end face.
[0020]
The substrate cleaning apparatus includes a disk-shaped spin base 10 that supports a substrate, for example, a semiconductor wafer W in a horizontal posture. A plurality of, for example, six, chuck pins 12 for gripping the peripheral portion of the wafer W are implanted in the peripheral portion on the upper surface side of the spin base 10 so as to be equally arranged in the circumferential direction. The chuck pins 12 are in contact with the lower peripheral edge of the wafer W to support the wafer W, and a fixing portion that presses the outer peripheral end surface of the wafer W supported on the supporting portion 12a to fix the wafer W. 12b. Although the detailed structure is not shown, the fixing portion 12b of the chuck pin 12 presses the outer peripheral end surface of the wafer W to fix the wafer W, and separates from the outer peripheral end surface of the wafer W to open the wafer W. It can be switched between the state to be performed.
[0021]
A through hole 14 is formed in the center of the spin base 10, and a cylindrical rotary support shaft 16 is vertically provided on the lower surface side of the spin base 10 so as to communicate with the through hole 14. Around the cylindrical rotary support shaft 16, a covered cylindrical casing 20 fixed on the base plate 18 is provided. The cylindrical rotation support shaft 16 is supported by the base plate 18 and the casing 20 via bearings 22 and 24 so as to be rotatable about a vertical axis. In the casing 20, a motor 26 is fixedly mounted on the base plate 18. A driving pulley 28 is fixed to the rotating shaft of the motor 26, while a driven pulley 30 is fitted to the cylindrical rotary support shaft 16, and a belt 32 is fixed to the driving pulley 28 and the driven pulley 30. It is hung around. By these mechanisms, the cylindrical rotation support shaft 16 is rotated, and the wafer W held on the spin base 10 fixed to the upper end of the cylindrical rotation support shaft 16 is rotated in a horizontal plane. . A nozzle 34 connected to the flow path of the cleaning liquid supply source is inserted through the hollow portion of the cylindrical rotary support shaft 16. The cleaning liquid is discharged from the upper end discharge port of the nozzle 34 toward the center of the lower surface of the wafer W held on the spin base 10.
[0022]
Around the casing 20, a cylindrical wall portion 36 disposed so as to surround the casing 20, and a bottom wall portion 38 formed integrally with the cylindrical wall portion 36 and connected to a lower end portion of the outer peripheral surface of the cylindrical portion of the casing 20. Are fixedly mounted on the base plate 18. The cylindrical portion, the cylindrical wall portion 36, and the bottom wall portion 38 of the casing 20 form a collecting tank 40. The bottom wall 38 forming the bottom of the recovery tank 40 has a V-shaped vertical section, and the bottom wall 38 has a drainage hole 42 formed therein. A drain port 44 is formed in the base plate 18 so as to communicate with the drain hole 42. Although not shown, the drain port 44 is connected to a cleaning liquid recovery tank by a flow path. The collected recovery pipes are connected to each other.
[0023]
Above the wafer W held by the spin base 10, an ultrasonic cleaning nozzle 46 having a discharge port arranged so as to face the surface of the wafer W is provided. The ultrasonic cleaning nozzle 46 is fixed to the tip of a scanning arm 48, and the scanning arm 48 is held in a cantilever manner by an arm holding unit 50, and the arm holding unit 50 is connected to a nozzle scanning mechanism 52, for example, in a horizontal direction. To a linear motion mechanism that linearly reciprocates. Further, the nozzle scanning mechanism 52 is fixed to the upper end of a rotation support shaft 54 disposed in the vertical direction. The rotation support shaft 54 is connected to a nozzle moving mechanism 56, is rotated by the nozzle moving mechanism 56, and is reciprocated vertically. Then, the ultrasonic cleaning nozzle 46 can reciprocate in the radial direction of the wafer W along the surface of the wafer W on the spin base 10 by the nozzle scanning mechanism 52. The nozzle moving mechanism 56 moves the ultrasonic cleaning nozzle 46 toward and away from the surface of the wafer W, and swings the ultrasonic cleaning nozzle 46 in a horizontal plane to retreat from the space above the wafer W. Can be done. It should be noted that the nozzle scanning mechanism and the nozzle moving mechanism are not limited to those in the illustrated example, and various mechanisms can be adopted.
[0024]
The ultrasonic cleaning nozzle 46 has a perspective view shown in FIG. 2, a longitudinal sectional view cut along the longitudinal direction in FIG. 3, and a longitudinal sectional view cut in a direction perpendicular to the longitudinal direction in FIG. The lower half portion has a V-shaped cross-section, and has a housing 58 in which an elongated rectangular discharge port 60 is formed at the lower end surface, and a through hole 62 formed in the upper wall surface of the housing 58. And an ultrasonic vibrator 64. The housing 58 is formed of a material having chemical resistance such as a fluororesin. In addition, a thin plate of quartz or high-purity SiC (silicon carbide) is attached to the surface of the ultrasonic transducer 64. The longitudinal dimension of the elongated rectangular discharge port 60 of the housing 58 is smaller than the radius dimension of the wafer W (for example, 8 inches in diameter). For example, the longitudinal dimension of the discharge port 60 is 10 mm to 35 mm. The widthwise dimension is 1.3 mm to 4.0 mm. The distance between the surface of the wafer W held on the spin base 10 and the lower end of the ultrasonic cleaning nozzle 46 is, for example, about 2 mm to 30 mm.
[0025]
A cable 66 is electrically connected to the ultrasonic vibrator 64, and the cable 66 is electrically connected to a high-frequency oscillator (not shown). Further, a power controller is provided for adjusting the ultrasonic power of the ultrasonic transducer 64 to, for example, 140 W at the maximum. Ultrasonic waves are emitted from the ultrasonic vibrator 64 toward the cleaning liquid 68 filled in the housing 58, and the ultrasonic vibration is applied to the cleaning liquid 68 discharged from the discharge port 60.
[0026]
A liquid inlet 70 is formed on the side wall surface of the housing 58, and a cleaning liquid supply pipe 72 connected to a cleaning liquid supply device (not shown) is connected to the liquid inlet 70. I have. The cleaning liquid 68 supplied from the cleaning liquid supply device into the housing 58 of the ultrasonic cleaning nozzle 46 through the cleaning liquid supply pipe 72 always fills the inside of the housing 58 and is discharged from the discharge port 60 to the surface of the wafer W. You. The discharge flow rate from the discharge port 60 is, for example, about 1.6 l / min to 6.5 l / min.
[0027]
When cleaning the wafer W with the cleaning device having the above-described configuration, the motor 26 is driven to rotate the wafer W on the spin base 10 in a horizontal plane, and the ultrasonic cleaning nozzle 46 is As shown by a solid line and a two-dot chain line in FIG. 1, the housing is moved from the ultrasonic transducer 64 of the ultrasonic cleaning nozzle 46 to the housing while reciprocating in the radial direction of the wafer W along the surface of the wafer W on the spin base 10. The cleaning liquid is discharged from the discharge port 60 of the ultrasonic cleaning nozzle 46 to the surface of the wafer W while emitting ultrasonic waves toward the cleaning liquid 68 in the inside 58. At the same time, the cleaning liquid is discharged from the upper end discharge port of the nozzle 34 toward the center of the lower surface of the wafer W held by the spin base 10.
[0028]
FIG. 5A is a plan view conceptually showing the scanning method of the ultrasonic cleaning nozzle 46 with respect to the wafer W by the movement of the ejection port 60. As shown in FIG. 5A, the ultrasonic cleaning nozzle 46 is arranged so that the longitudinal direction of the discharge port 60 is along the radial direction of the wafer W, and the ultrasonic cleaning nozzle 46 is rotated with respect to the rotating wafer W. Is reciprocated linearly between the vicinity of the periphery and the vicinity of the center of the wafer W along the radial direction of the wafer W as indicated by the arrow. The time of one reciprocation is, for example, about 3 to 15 seconds. By doing so, the cleaning liquid discharged from the discharge port 60 of the ultrasonic cleaning nozzle 46 is supplied evenly and uniformly to the entire surface of the wafer W.
[0029]
The method of scanning the ultrasonic cleaning nozzle 46 on the wafer W is not limited to the method shown in FIG. For example, as shown in FIG. 5B, the ultrasonic cleaning nozzle 46 is arranged so that the longitudinal direction of the discharge port 60 is orthogonal to the radial direction of the wafer W, or as shown in FIG. The ultrasonic cleaning nozzle 46 is disposed such that the longitudinal direction of the discharge port 60 obliquely intersects the radial direction of the wafer W, and the ultrasonic cleaning nozzle 46 discharges the rotating wafer W to the rotating wafer W, respectively. The outlet 60 may be linearly reciprocated between the vicinity of the periphery and the vicinity of the center of the wafer W along the radial direction of the wafer W as indicated by the arrow.
[0030]
As described above, the surface of the wafer W is uniformly cleaned with the cleaning liquid and ultrasonically cleaned. In addition, the back surface of the wafer W is also cleaned by the cleaning liquid discharged from the upper end discharge port of the nozzle 34, and is also cleaned by the ultrasonic vibration transmitted to the back surface of the wafer W, and particles adhered to the back surface of the wafer W are removed. Removed.
[0031]
In this cleaning apparatus, since the discharge port 60 of the ultrasonic cleaning nozzle 46 is not a spot but an elongated rectangle, the propagation range of the ultrasonic wave to the wafer W expands without concentrating, and the ultrasonic wave Damage is reduced. Further, since the discharge port 60 of the ultrasonic cleaning nozzle 46 has a longitudinal dimension smaller than the radius dimension of the wafer W, the discharge port 60 of the ultrasonic cleaning nozzle 46 is smaller than the conventional ultrasonic cleaning nozzle having a slit-shaped discharge port. The flow rate of the cleaning liquid flowing out to the surface of the wafer W is reduced, and the amount of the cleaning liquid used is suppressed. Further, this cleaning apparatus includes a recovery tank 40, and the cleaning liquid flowing down from the periphery of the wafer W flows into the recovery tank 40, passes through the drainage hole 42 and the drainage port 44 from the recovery tank 40. It is discharged and collected in a collection tank. Therefore, the consumption of the cleaning liquid is further reduced.
[0032]
As the cleaning liquid used in this cleaning apparatus, a cleaning effect can be recognized even with pure water. For example, it is more effective to use a mixed aqueous solution of ammonia water and hydrogen peroxide water or a liquid in which hydrogen gas is dissolved in pure water. It is. Also, a mixed aqueous solution of hydrochloric acid and hydrogen peroxide solution, a dilute hydrofluoric acid aqueous solution, a mixed aqueous solution of hydrofluoric acid and hydrochloric acid, a mixed aqueous solution of hydrofluoric acid and hydrogen peroxide solution, a solution in which ozone gas is dissolved in hydrofluoric acid, etc. If a chemical solution capable of removing metal contamination is used, particles and metal contamination can be removed from the wafer by a single cleaning process if the contamination is relatively light. Further, when more severe contamination is required or when a higher level of cleanliness is required, the cleaning process may be performed twice as follows.
[0033]
{Circle around (1)} Using a mixed aqueous solution of ammonia water and hydrogen peroxide water or a solution obtained by dissolving hydrogen gas in pure water as a cleaning liquid, the above-described cleaning apparatus is used to perform wafer cleaning processing. {Circle around (2)} A mixed aqueous solution of hydrochloric acid and hydrogen peroxide, a diluted aqueous solution of hydrofluoric acid, a mixed aqueous solution of hydrofluoric acid and hydrochloric acid, a mixed aqueous solution of hydrofluoric acid and aqueous hydrogen peroxide, and a solution obtained by dissolving ozone gas in hydrofluoric acid Using the above as a cleaning liquid, the wafer is cleaned by the above-described cleaning apparatus.
[0034]
The cleaning processes (1) and (2) are performed in the order of (1) → (2) or in the order of (2) → (1). When the cleaning processes (1) and (2) are continuously performed as described above, the cleaning process is performed for the process (2) without using the cleaning apparatus having the ultrasonic cleaning nozzle 46. You may do so. Further, a pure water rinsing process may be performed between the process (1) and the process (2). When the cleaning process using the chemical solution is completed, a final pure water rinsing process is performed, and finally, the wafer is spin-dried.
The basic cleaning apparatus described above performs various cleaning steps, for example, so-called pre-cleaning and post-cleaning, such as particle removal from a wafer before film formation processing such as oxidation and diffusion, particle removal after ashing, and polymer removal. It can be widely and generally used in the step.
[0036]
【The invention's effect】
When the substrate cleaning apparatus according to each of the first and second aspects of the present invention is used, the consumption of the cleaning liquid can be suppressed, the uniformity of the cleaning process can be improved, and damage to the substrate can be suppressed.
[0037]
In the substrate cleaning apparatus according to the third aspect, the cleaning effect can be sufficiently improved.
[0038]
According to the substrate cleaning method of the present invention, the consumption of the cleaning liquid can be suppressed, the uniformity of the cleaning process can be improved, and the damage to the substrate can be suppressed.
[0039]
In the substrate cleaning method according to the fifth aspect, the consumption of the cleaning liquid can be further reduced.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing an example of an embodiment of the present invention and showing an essential part of a substrate cleaning apparatus by an end face.
FIG. 2 is a perspective view showing a configuration of an ultrasonic cleaning nozzle which is a component of the substrate cleaning apparatus shown in FIG.
FIG. 3 is a view showing a cross section of the ultrasonic cleaning nozzle shown in FIG. 2 cut along a longitudinal direction.
FIG. 4 is a view showing a cross section of the ultrasonic cleaning nozzle shown in FIG. 2 cut in a direction orthogonal to a longitudinal direction.
5 is a plan view conceptually showing a method of scanning an ultrasonic cleaning nozzle with respect to a wafer by a movement of a discharge port in the substrate cleaning apparatus shown in FIG.
[Explanation of symbols]
W Semiconductor wafer 10 Spin base 12 Chuck pin 16 Cylindrical rotating shaft 18 Base plate 20 Casing 22, 24 Bearing 26 Motor 28, 30 Pulley 32 Belt 34 Nozzle 36 Cylindrical wall 38 Bottom wall 40 Recovery tank 44 Drain outlet 46 Ultrasonic cleaning 48 Scanning arm 50 Arm holding part 52 Nozzle scanning mechanism 54 Rotating support shaft 56 Nozzle moving mechanism 58 Housing 60 Slender rectangular discharge port 64 Ultrasonic transducer 66 Cable 68 Cleaning liquid 70 Liquid introduction port 72 Cleaning liquid supply Piping

Claims (5)

A substrate cleaning apparatus for supplying a cleaning liquid to the substrate and cleaning the substrate,
Substrate supporting and rotating means for supporting and rotating the substrate,
It has an elongated rectangular discharge port for discharging the cleaning liquid to the surface of the substrate whose longitudinal dimension is smaller than the radial dimension of the substrate and which is supported and rotated by the substrate support / rotation means, and discharges from the discharge port to the substrate surface. An ultrasonic oscillator that emits ultrasonic waves toward the cleaning liquid to be cleaned, and an ultrasonic cleaning nozzle including a high-frequency oscillator that drives the ultrasonic oscillator,
Nozzle moving means for moving the ultrasonic cleaning nozzle along the surface of the substrate which is supported and rotated by the substrate supporting / rotating means,
A substrate cleaning apparatus comprising: 2. The substrate cleaning apparatus according to claim 1, wherein the cleaning liquid is discharged from the discharge port of the ultrasonic cleaning nozzle to the surface of the substrate at a flow rate of 1.6 l / min to 6.5 l / min. The substrate cleaning apparatus according to claim 1, further comprising a power controller that adjusts an ultrasonic power of the ultrasonic cleaning nozzle to 140 W or less. A substrate cleaning method for cleaning a substrate by supplying a cleaning liquid to the substrate,
While rotating the substrate, the ultrasonic vibration nozzle having an elongated rectangular discharge port whose longitudinal dimension is smaller than the radial dimension of the substrate is moved along the surface of the substrate while ultrasonic vibration is generated from the discharge port of the ultrasonic cleaning nozzle. A substrate cleaning method, wherein the cleaning liquid provided with is supplied to the entire surface of the substrate at a flow rate of 1.6 l / min to 6.5 l / min. 5. The substrate cleaning method according to claim 4, wherein the cleaning liquid discharged from the discharge port of the ultrasonic cleaning nozzle to the surface of the substrate is collected.

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