JP2004079528A - Manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for vapor deposition of one of film forming apparatus, which raises utilization efficiency of EL material excellent in homogenity and throughput of an EL layer forming. <P>SOLUTION: After a substrate is evenly heated under vacuum with a sheath heater, a vapor-deposition source holder where a vessel 202 in which a vapor deposition material is sealed up is provided is moved relative to a substrate 201 by some pitch within a chamber. A film-thickness monitor 201 is moved integrally with the vapor deposition holder as well. Further, the moving speed of the vapor-deposition source holder is adjusted too according to the value measured by the film thickness monitor 201 for securing the uniformity in film thickness. <P>COPYRIGHT: (C)2004,JPO

Description

The present invention relates to a manufacturing apparatus provided with a film forming apparatus used for forming a material capable of forming a film by vapor deposition (hereinafter, referred to as an evaporation material), and a light emitting device using the manufacturing apparatus and having a layer containing an organic compound as a light emitting layer. The method for producing In particular, the present invention relates to an evaporation method and an evaporation apparatus for forming a film by evaporating an evaporation material from a plurality of evaporation sources provided opposite to a substrate.

In recent years, research on light-emitting devices having EL elements as self-luminous light-emitting elements has been active. This light emitting device is also called an organic EL display or an organic light emitting diode. These light-emitting devices have characteristics such as fast response speed, low voltage, and low power consumption driving suitable for displaying moving images. Therefore, next-generation displays such as a new generation of mobile phones and personal digital assistants (PDAs) are available. As a big attention.

An EL element including a layer containing an organic compound as a light-emitting layer has a structure in which a layer containing an organic compound (hereinafter, referred to as an EL layer) is sandwiched between an anode and a cathode. , The EL layer emits luminescence (Electro Luminescence). Light emission from the EL element includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state.

The EL layer has a laminated structure represented by “hole transport layer / light emitting layer / electron transport layer”. In addition, EL materials forming an EL layer are roughly classified into a low molecular (monomer) material and a high molecular (polymer) material, and the low molecular material is formed into a film using an evaporation apparatus.

A conventional vapor deposition apparatus has a substrate placed in a substrate holder, and has a crucible in which an EL material, that is, a vapor deposition material is sealed, a shutter for preventing the EL material to be sublimated from rising, and a heater for heating the EL material in the crucible. ing. Then, the EL material heated by the heater sublimates and is deposited on the rotating substrate. At this time, the distance between the substrate and the crucible needs to be 1 m or more in order to form a uniform film.

Therefore, the vapor deposition apparatus itself becomes large, and the time required for exhausting each film forming chamber of the vapor deposition apparatus becomes long, so that the film deposition rate becomes slow and the throughput is lowered. As one means for solving this point, the present applicant has proposed vapor deposition apparatuses (Patent Documents 1 and 2).

JP 2001-247959 A JP-A-2002-60926

In the above-described vapor deposition apparatus and vapor deposition method, when an EL layer is formed by vapor deposition, most of the sublimated EL material is formed on the inner wall of the deposition chamber of the vapor deposition apparatus, a shutter or an anti-adhesion shield (the vapor deposition material adheres to the inner wall of the deposition chamber). Protection plate to prevent that). Therefore, at the time of forming the EL layer, the utilization efficiency of the expensive EL material is extremely low at about 1% or less, and the manufacturing cost of the light emitting device is extremely high.

(4) In the conventional vapor deposition apparatus, it is necessary to keep the distance between the substrate and the vapor deposition source at least 1 m in order to obtain a uniform film. For this reason, the vapor deposition apparatus itself becomes large, and the time required for exhausting the film forming chambers of the vapor deposition apparatus becomes long, so that the film deposition rate is reduced, and the processing speed is reduced. Further, in the case of a large-area substrate, there is a problem that the film thickness tends to be non-uniform at the central portion and the peripheral portion of the substrate. Furthermore, since the evaporation apparatus has a structure in which the substrate is rotated, there is a limit to the evaporation apparatus intended for a large-area substrate.

ＥＬ Further, there is a problem that the EL material is easily oxidized and deteriorated by the presence of oxygen or water. However, when forming a film by the vapor deposition method, a predetermined amount of the vapor deposition material contained in a container (glass bottle) is taken out, and a container (typically, a container disposed at a position facing a film-forming product in a vapor deposition apparatus (typically, In this transfer operation, oxygen, water, and even impurities may be mixed into the deposition material.

Furthermore, the work of transferring from a glass bottle to a container has been performed manually by a human, for example, in a pretreatment chamber of a film forming chamber provided with gloves or the like. However, when gloves were provided in the pretreatment chamber, vacuum could not be achieved, and the work was performed at atmospheric pressure, and the possibility of contamination with impurities was high. Even if the transfer is performed in a pretreatment chamber in a nitrogen atmosphere, it has been difficult to sufficiently reduce moisture and oxygen. It is also conceivable to use a robot, but it is very difficult to make a robot that performs the transfer operation because the evaporating material is in powder form. For this reason, it has been difficult to form an EL device, that is, a process from a process of forming an EL layer on a lower electrode to a process of forming an upper electrode into a consistent closed system capable of avoiding impurity contamination.

Accordingly, an object of the present invention is to provide a vapor deposition apparatus and a vapor deposition method, which are one of the manufacturing apparatuses that can improve the utilization efficiency of an EL material, and are excellent in uniformity of EL layer film formation and processing speed. Another object of the present invention is to provide a light emitting device manufactured by the evaporation apparatus and the evaporation method of the present invention and a method for manufacturing the light emitting device.

In addition, the present invention relates to a substrate having a large area such as a substrate having a size of 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm. And a manufacturing apparatus for efficiently depositing an EL material. Another object of the present invention is to provide a vapor deposition apparatus capable of obtaining a uniform film thickness over the entire surface of a large-area substrate.

Furthermore, the present invention provides a manufacturing system capable of avoiding contamination of the EL material with impurities.

In order to achieve the above object, the present invention provides a vapor deposition apparatus characterized in that a substrate and a vapor deposition source move relatively. That is, the present invention is characterized in that, in a vapor deposition apparatus, a vapor deposition source holder in which a container in which a vapor deposition material is sealed moves at a certain pitch with respect to a substrate. Also, the film thickness monitor moves integrally with the deposition holder. The moving speed of the evaporation source holder is also adjusted according to the value measured by the film thickness monitor to make the film thickness uniform.

In addition, as shown in FIG. 3, the shutter 503 is provided with a minute hole so that the vapor deposition material obliquely discharged from the hole (opening S2) hits the film thickness monitor to close the shutter. The deposition rate can always be measured even in the state where it is in the state. The method of opening and closing the shutter is not particularly limited, and may be a slide type. At the time of vapor deposition, since the container 501 in which the vapor deposition material is sealed is kept heated, the vapor deposition material is heated even when there is no substrate above the vapor deposition holder 502 by moving the vapor deposition holder 502, and the shutter 503 is opened. This eliminates waste of the deposition material. In addition, by providing a small hole in the shutter, it is possible to cause a leak so that the pressure in the container does not become high. However, the opening area S2 of the hole is smaller than the opening area S1 of the container.

Further, in order to make the film thickness uniform, it is preferable to rotate the deposition holder at the periphery of the substrate. FIG. 2C shows an example in which the evaporation holder makes one rotation. Further, half rotation may be repeated as shown in FIG. Further, it is preferable to move the deposition source holder at a certain pitch so that the ends (hems) of the sublimated deposition material overlap (overlap).

In addition, since the main cause of the shrinkage of the non-light-emitting region is that a small amount of water including the adsorbed water reaches the layer containing the organic compound, the layer containing the organic compound is formed on the active matrix substrate provided with the TFT. Immediately before formation, it is desirable to remove moisture (including adsorbed moisture) existing in the active matrix substrate.

According to the present invention, a heating chamber for uniformly heating a plurality of substrates is provided using a plurality of flat plate heaters (typically, a sheath heater), and vacuum heating is performed at 100 ° C. to 250 ° C. before forming a layer containing an organic compound. , It is possible to prevent or reduce the occurrence of shrinkage. In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition, moisture is easily absorbed depending on the organic resin material, and further degassing may occur. Therefore, before forming a layer containing an organic compound, It is effective to perform vacuum heating at 100 ° C to 250 ° C.

Further, in the present invention, in order to prevent moisture from entering the layer containing the organic compound, it is preferable to perform a process from formation of the layer containing the organic compound to sealing without exposure to the air.

The configuration of the invention disclosed in this specification is:
A load chamber, a transfer chamber connected to the load chamber, and a manufacturing apparatus having a plurality of film formation chambers and a processing chamber connected to the transfer chamber,
The plurality of film forming chambers are connected to an evacuation processing chamber that evacuates the film forming chamber, and an alignment unit that aligns a mask and a substrate, a substrate holding unit, an evaporation source holder, and the evaporation source holder. Means for moving
The vapor deposition source holder has a container in which a vapor deposition material is sealed, means for heating the container, and a shutter provided on the container,
The manufacturing apparatus is characterized in that the processing chamber is connected to a vacuum evacuation processing chamber for evacuating, and a plurality of flat plate heaters are arranged at intervals so as to vacuum heat a plurality of substrates.

In addition, in order to remove organic substances or moisture, it is preferable to perform plasma treatment before vapor deposition of a layer containing an organic compound.
A load chamber, a transfer chamber connected to the load chamber, and a manufacturing apparatus having a plurality of film formation chambers and a processing chamber connected to the transfer chamber,
The plurality of film forming chambers are connected to an evacuation processing chamber that evacuates the film forming chamber, and an alignment unit that aligns a mask and a substrate, a substrate holding unit, an evaporation source holder, and the evaporation source holder. Means for moving
The vapor deposition source holder has a container in which a vapor deposition material is sealed, means for heating the container, and a shutter provided on the container,
The processing chamber is connected to a vacuum evacuation processing chamber for evacuating, and generates plasma by introducing a hydrogen gas, an oxygen gas, or a rare gas.

(4) In the above structure, a plurality of flat plate heaters are arranged in the transfer chamber at an interval and connected to a processing chamber capable of heating a plurality of substrates in vacuum. By uniformly heating the substrate with a plurality of flat heaters in vacuum to remove moisture adsorbed on the substrate, it is possible to prevent or reduce the occurrence of shrink.

In each of the above configurations, the means for moving the evaporation source holder has a function of moving the evaporation source holder in the X-axis direction at a certain pitch and moving the evaporation source holder in the Y-axis direction at a certain pitch. Features. In the vapor deposition method of the present invention, since it is not necessary to rotate the substrate, it is possible to provide a vapor deposition apparatus that can handle a large-area substrate. Further, according to the present invention in which the evaporation source holder moves in the X-axis direction and the Y-axis direction with respect to the substrate, it becomes possible to uniformly form the evaporation film.

In the vapor deposition apparatus of the present invention, at the time of vapor deposition, the distance d between the substrate and the vapor deposition source holder is typically reduced to 30 cm or less, preferably 20 cm or less, more preferably 5 cm to 15 cm, and the utilization efficiency of the vapor deposition material and The processing speed has been significantly improved.

In the above vapor deposition apparatus, the vapor deposition source holder includes a container (typically a crucible), a heater disposed outside the container via a heat equalizing member, a heat insulating layer provided outside the heater, , A cooling pipe turned outside of the outer cylinder, a vapor deposition shutter for opening and closing the opening of the outer cylinder including the opening of the crucible, and a film thickness sensor. Note that the heater may be a container that can be conveyed while being fixed to the container. The container is made of a material such as a sintered body of BN, a composite sintered body of BN and AlN, quartz, or graphite, and can withstand high temperature, high pressure, and reduced pressure.

機構 Further, the evaporation source holder is provided with a mechanism capable of moving in the X direction or the Y direction in the film forming chamber while keeping the horizontal position. Here, the evaporation source holder is moved in a zigzag manner as shown in FIG. 2A or 2B on a two-dimensional plane. Also, the moving pitch of the evaporation source holder may be appropriately adjusted to the interval between the partition walls.

2A and 2B, the timing at which the evaporation source holders A, B, C, and D start moving may be after or before the previous evaporation source holder is stopped. There may be. For example, an organic material having a hole transporting property is set in the deposition holder A, an organic material to be a light emitting layer is set in the deposition holder B, an organic material having an electron transporting property is set in the deposition holder C, and the deposition holder D is set in the deposition holder D. If a material to be a cathode buffer is set, these material layers can be continuously laminated in the same chamber. In the case where the movement of the next deposition source holder is started before the deposited film is solidified, a region (mixed region) in which the deposition material is mixed at the interface with each film in the EL layer having a laminated structure. Can be formed.

According to the present invention in which the substrate and the evaporation source holders A, B, C, and D move relatively, it is possible to reduce the size of the apparatus without having to provide a long distance between the substrate and the evaporation source holder. In addition, since the vapor deposition apparatus is small, the sublimated vapor deposition material is less likely to adhere to the inner wall of the film formation chamber or the anti-adhesion shield, and the vapor deposition material can be used without waste. Further, in the vapor deposition method of the present invention, since it is not necessary to rotate the substrate, it is possible to provide a vapor deposition apparatus capable of supporting a large-area substrate. Further, according to the present invention in which the evaporation source holder moves in the X-axis direction and the Y-axis direction with respect to the substrate, it becomes possible to uniformly form the evaporation film.

The number of organic compounds provided in the evaporation source holder is not necessarily one or one, but may be plural. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source holder, another organic compound (dopant material) which can be a dopant may be provided together. The organic compound layer to be deposited is composed of a host material and a light emitting material (dopant material) having lower excitation energy than the host material, and the excitation energy of the dopant is the excitation energy of the hole transport region and the excitation of the electron transport layer. It is preferable to design so as to be lower than the energy. Thus, diffusion of molecular excitons of the dopant can be prevented, and the dopant can emit light effectively. If the dopant is a carrier trap type material, the recombination efficiency of carriers can be increased. The present invention also includes a case where a material capable of converting triplet excitation energy into light emission is added to the mixed region as a dopant. In forming the mixed region, the mixed region may have a concentration gradient.

Further, when a plurality of organic compounds are provided in one evaporation source holder, it is desirable that the direction in which the organic compounds evaporate so as to be mixed with each other is oblique so as to intersect at the position of the deposition target. Further, in order to perform co-evaporation, the evaporation source holder may be provided with four types of evaporation materials (for example, two types of host materials as the evaporation material a and two types of dopant materials as the evaporation material b). Further, when the pixel size is small (or when the distance between the insulators is small), the inside of the container is divided into four parts, and co-evaporation is performed so that each is appropriately evaporated, so that a precise film can be formed.

た め Also, since the distance d between the substrate and the evaporation source holder is typically reduced to 30 cm or less, preferably 5 cm to 15 cm, the evaporation mask may be heated. Therefore, the evaporation mask is made of a metal material having a low coefficient of thermal expansion that is not easily deformed by heat (for example, a high melting point metal such as tungsten, tantalum, chromium, nickel, or molybdenum, or an alloy containing these elements, a material such as stainless steel, Inconel, or Hastelloy). It is desirable to use For example, a low thermal expansion alloy of 42% nickel and 58% iron may be used. Further, a mechanism for circulating a cooling medium (cooling water, cooling gas) through the evaporation mask may be provided to cool the heated evaporation mask.

In addition, in order to clean the deposits attached to the mask, it is preferable that plasma is generated in the film formation chamber by the plasma generating means, and the deposits attached to the mask are vaporized and exhausted to the outside of the film formation chamber. Therefore, an electrode is separately provided on the mask, and a high-frequency power supply is connected to one of the electrodes. As described above, the mask is preferably formed using a conductive material. Further, it is preferable that a substrate shutter (not shown) is provided between the mask and the vapor deposition holder, and plasma is generated between the substrate shutter and the mask.

Note that the evaporation mask is used when a deposited film is selectively formed on the first electrode (cathode or anode), and is not particularly required when the deposited film is formed on the entire surface.

Further, the film formation chamber has a gas introducing means for introducing one or a plurality of gases selected from Ar, H, F, NF ₃ , or O, and a means for exhausting a vaporized deposit. . With the above configuration, the film formation chamber can be cleaned without touching the atmosphere during maintenance.

In addition, in each of the above configurations, the vapor deposition holder rotates when switching from the X-axis direction to the Y-axis direction. By rotating the deposition holder, the film thickness can be made uniform.

Further, in each of the above structures, the shutter is characterized in that a hole having an opening area S2 smaller than the opening area S1 of the container is provided. By providing a small hole in the shutter, a leak is made so that the pressure in the container does not become high.

に お い て Further, in each of the above structures, the evaporation source holder is provided with a film thickness monitor. The film thickness is made uniform by adjusting the moving speed of the evaporation source holder according to the value measured by the film thickness monitor.

{Circle around (1)} In each of the above structures, the rare gas element is one or more selected from He, Ne, Ar, Kr, and Xe. Among them, Ar is preferable because it is inexpensive.

In addition, when a main process in which impurities such as oxygen and water may be mixed with an EL material or a metal material to be deposited is given, a process of setting the EL material in a deposition chamber before the deposition, a deposition process, or the like. Can be considered.

Therefore, it is preferable to provide a glove in the pretreatment chamber connected to the film formation chamber, move the deposition source from the deposition chamber to the pretreatment chamber, and set a deposition material in the deposition source in the pretreatment chamber. That is, the manufacturing apparatus is such that the evaporation source moves to the pretreatment chamber. By doing so, the evaporation source can be set while maintaining the degree of cleaning of the film formation chamber.

容器 Also, the container for storing the EL material is usually put in a brown glass bottle and closed with a plastic lid (cap). It is also conceivable that the degree of sealing of the container for storing the EL material is insufficient.

2. Description of the Related Art Conventionally, when a film is formed by a vapor deposition method, a predetermined amount of an evaporating material placed in a container (glass bottle) is taken out, and a container (typically, a container disposed at a position opposed to a film-forming product in a vapor deposition apparatus) (A crucible or a vapor deposition boat), but there is a risk that impurities may be mixed in this transfer operation. That is, oxygen, water, and other impurities, which are one of the causes of deterioration of the EL element, may be mixed.

作業 The work of transferring from a glass bottle to a container may be performed by a human hand in a pretreatment chamber provided with gloves or the like in a vapor deposition apparatus. However, if a glove is provided in the pretreatment chamber, it cannot be evacuated and work must be performed at atmospheric pressure. Even if it is performed in a nitrogen atmosphere, it is difficult to reduce moisture and oxygen in the pretreatment chamber as much as possible. Met. It is possible to use a robot, but it is difficult to make a transfer robot because the evaporating material is in powder form. Therefore, it has been difficult to fully automate the steps from the step of forming the EL layer on the lower electrode to the step of forming the upper electrode, and to form a consistent closed system capable of avoiding impurity contamination.

Therefore, the present invention does not use a conventional container as a container for storing the EL material, typically a brown glass bottle or the like, and directly stores the EL material or the metal material in a container to be installed in a vapor deposition apparatus, This is a manufacturing system in which vapor deposition is carried out after transport, thereby realizing prevention of impurities from being mixed into a high-purity vapor deposition material. When the evaporation material of the EL material is directly stored, sublimation purification may be directly performed in a container to be installed in the evaporation apparatus instead of storing the obtained evaporation material separately. According to the present invention, it is possible to cope with further high-purity deposition materials in the future. Alternatively, a metal material may be directly stored in a container to be installed in a vapor deposition apparatus, and vapor deposition may be performed using a heating resistor.

Also, it is preferable that other components, for example, a film thickness monitor (a crystal oscillator or the like), a shutter, and the like are similarly transported without touching the atmosphere, and installed in a vapor deposition apparatus.

It is desirable that the light emitting device maker using the vapor deposition device request the material maker that produces or sells the vapor deposition material to directly store the vapor deposition material in the container installed in the vapor deposition device.

Also, no matter how high the purity of the EL material is provided by the material manufacturer, there is a risk of contamination of impurities as long as the light emitting device manufacturer has the conventional relocation work, and the purity of the EL material cannot be maintained. The purity was limited. According to the present invention, a light emitting device manufacturer and a material manufacturer cooperate to reduce the contamination of impurities, thereby maintaining an extremely high purity EL material obtained by the material manufacturer, and performing vapor deposition by the light emitting device manufacturer without reducing the purity as it is. be able to.
The form of the container to be transported will be specifically described with reference to FIG. The second container divided into an upper portion (621a) and a lower portion (621b) used for transport is provided with fixing means 706 provided for fixing the first container provided on the upper portion of the second container, and for pressurizing the fixing means. A spring 705, a gas inlet 708 serving as a gas path for holding the second container at a reduced pressure provided in a lower part of the second container, an O-ring 707 for fixing the upper container 621a and the lower container 621b, It has a fastener 702. In the second container, a first container 701 in which a purified deposition material is sealed is provided. Note that the second container may be formed using a material including stainless steel, and the first container may be formed using a material including titanium.

(4) At the material maker, the purified evaporation material is sealed in the first container 701. Then, the second upper part 621a and the lower part 621b are joined via the O-ring 707, the upper container 621a and the lower container 621b are fixed with the fastener 702, and the first container 701 is sealed in the second container. . After that, the inside of the second container is depressurized through the gas inlet 708, further replaced with a nitrogen atmosphere, the spring 705 is adjusted, and the first container 701 is fixed by the fixing means 706. Note that a desiccant may be provided in the second container. When the inside of the second container is kept in a vacuum, reduced pressure, or nitrogen atmosphere as described above, even slight adhesion of oxygen or water to the deposition material can be prevented.

(5) In this state, the first container 701 is transported to the light emitting device maker and is directly installed in the processing chamber 613. After that, the evaporation material is sublimated by heating, and a deposition film is formed.

Next, referring to FIGS. 4 and 5, a mechanism for setting the first container hermetically sealed and conveyed in the second container in the film formation chamber will be described. FIGS. 4 and 5 show a state where the first container is being conveyed.

FIG. 4A is a top view of an installation chamber 805 including a base 804 on which a first container or a second container is placed, an evaporation source holder 803, and a transport unit 802 for transporting the first container. FIG. 4B is a perspective view of the installation room. Further, the installation chamber 805 is arranged so as to be adjacent to the film formation chamber 806, and the atmosphere in the installation chamber can be controlled by means for controlling the atmosphere through a gas inlet. Note that the transporting means of the present invention is not limited to a configuration in which the first container is transported across the side surface of the first container as shown in FIG. A configuration may be adopted in which the sheet is conveyed by sandwiching (pinching).

。 The second container is placed on the base 804 in such an installation room 805 with the fastener 702 removed. Next, the inside of the installation chamber 805 is reduced in pressure by means for controlling the atmosphere. When the pressure in the installation chamber is equal to the pressure in the second container, the second container can be easily opened. Then, the upper part 621a of the second container is removed by the transporting means 802, and the first container 701 is set on the evaporation source holder 803. Although not shown, a place where the removed upper part 621a is arranged is appropriately provided. Then, the evaporation source holder 803 moves from the installation chamber 805 to the film formation chamber 806.

(4) Thereafter, the evaporation material is sublimated by the heating means provided on the evaporation source holder 803, and the film formation is started. When a shutter (not shown) provided in the evaporation source holder 803 is opened during the film formation, the sublimated evaporation material is scattered in the direction of the substrate, is evaporated on the substrate, and is formed on the light emitting layer (hole transport layer, hole injection layer). Layer, an electron transport layer, and an electron injection layer).

Then, after the vapor deposition is completed, the vapor deposition source holder 803 returns to the installation chamber 805, and the first container 701 installed in the vapor deposition source holder 803 is moved to the second container mounted on the base 804 by the transport unit 802. It is moved to a lower container (not shown) and is sealed by an upper container 621a. At this time, it is preferable that the first container, the upper container 621a, and the lower container are hermetically sealed in the transported combination. In this state, the installation chamber 805 is set to the atmospheric pressure, the second container is taken out of the installation chamber, and the fastener 702 is fixed and transported to the material maker.

Note that the turntable 807 may have a function of rotating in order to efficiently transport the evaporation source holder that starts the evaporation and the evaporation source holder that has completed the evaporation. The turntable 807 is not limited to the above-described configuration, and has a function of moving the turntable 807 left and right. When the turntable 807 approaches the deposition source holder arranged in the film formation chamber 806, a plurality of May be installed in the evaporation source holder.

Next, a mechanism for installing a plurality of first containers sealed and conveyed in a second container different from FIG. 4 in a plurality of evaporation source holders will be described with reference to FIG.

FIG. 5A illustrates a table 904 on which a first container or a second container is placed, a plurality of evaporation source holders 903, a plurality of transfer units 902 for transferring the first container, and a turntable 907. 5A is described, and FIG. 5B is a perspective view of the installation chamber 905. Further, the installation chamber 905 is arranged so as to be adjacent to the film formation chamber 906, and the atmosphere in the installation chamber can be controlled by means for controlling the atmosphere via a gas inlet.

The plurality of first containers 701 are set on the plurality of evaporation source holders 903 by such a rotating table 907 and the plurality of transport units 902, and the plurality of first containers are mounted on the plurality of evaporation source holders on which film formation is completed. 904 can be efficiently performed. At this time, it is preferable that the first container is installed in the second container that has been transported.

蒸 着 The vapor deposition film formed by the vapor deposition apparatus as described above can minimize impurities to a minimum, and when a light emitting element is completed using this vapor deposition film, high reliability and luminance can be realized. In addition, with such a manufacturing system, the container sealed by the material manufacturer can be directly installed on the vapor deposition device, preventing the vapor deposition material from adhering oxygen and water, and responding to future ultra-high purity light emitting devices. It becomes possible. Further, by purifying the container having the residual evaporation material again, waste of the material can be eliminated. Further, the first container and the second container can be reused, and cost reduction can be realized.

Further, according to the present invention, as shown in FIG. 10, in a multi-chamber type manufacturing apparatus having a plurality of film formation chambers, a first film formation chamber for vapor deposition on a first substrate and a vapor deposition on a second substrate are provided. And a plurality of organic compound layers may be stacked in parallel (parallel) in each of the film formation chambers to shorten the processing time per substrate. That is, after carrying the first substrate from the transfer chamber into the first film formation chamber, the second substrate is transferred from the transfer chamber to the second film formation chamber while vapor deposition is performed on the first substrate. The substrate is loaded and vapor deposition is performed on the second substrate.

In FIG. 10, since six transfer chambers are provided in the transfer chamber 1004a, six substrates can be carried into each of the transfer chambers and vapor deposition can be sequentially performed in parallel. Further, even during maintenance, vapor deposition can be sequentially performed in another film forming chamber without temporarily stopping the production line.

In addition, in the case of forming a full-color light-emitting device in FIG. 10, a hole transport layer, a light-emitting layer, and an electron transport layer may be successively stacked in R, G, and B in different deposition chambers. Further, a hole transporting layer, a light emitting layer, and an electron transporting layer may be continuously laminated for R, G, and B in the same film forming chamber. When a hole transporting layer, a light emitting layer, and an electron transporting layer are continuously laminated in R, G, and B in the same film forming chamber, respectively, the film forming apparatus as shown in FIG. An evaporation apparatus provided with a plurality of at least three evaporation source holders (evaporation source holders moving in the X direction or the Y direction) may be used. In order to avoid color mixing, it is preferable to use different vapor deposition masks for R, G, and B, perform mask alignment before vapor deposition, and form a film only in a predetermined region. In order to reduce the number of masks, the same vapor deposition mask may be used for R, G, and B, mask alignment may be performed before vapor deposition, and the mask position may be shifted for each color to form a film only in a predetermined region.

In addition, the present invention is not limited to a structure in which a hole transport layer, a light emitting layer, and an electron transport layer are continuously stacked in the same chamber, but may be a plurality of connected chambers. The layers may be laminated.

In the above description, as a typical example, an example in which three layers of a hole transport layer, a light-emitting layer, and an electron transport layer are stacked as a layer containing an organic compound disposed between a cathode and an anode has been described. There is no particular limitation, and a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are laminated on the anode in this order. A structure, a two-layer structure or a single-layer structure may be used. The light emitting layer may be doped with a fluorescent dye or the like. Further, as the light emitting layer, there are a light emitting layer having a hole transporting property, a light emitting layer having an electron transporting property, and the like. All of these layers may be formed using a low molecular material, or one or some of them may be formed using a high molecular material. In this specification, all layers provided between the cathode and the anode are collectively referred to as a layer containing an organic compound (EL layer). Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer. The layer containing an organic compound (EL layer) may also contain an inorganic material such as silicon.

Note that the light-emitting element (EL element) includes a layer containing an organic compound that can obtain luminescence (Electro Luminescence) generated by application of an electric field (hereinafter, referred to as an EL layer), an anode, and a cathode. Luminescence of an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence), which are produced by the present invention. The light emitting device can be applied to the case of using either light emission.

In the light emitting device of the present invention, a driving method for screen display is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a plane sequential driving method, or the like may be used. Typically, a line-sequential driving method is used, and a time-division grayscale driving method or an area grayscale driving method may be used as appropriate. Further, the video signal input to the source line of the light emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be appropriately designed in accordance with the video signal.

In this specification, a light-emitting element formed of a cathode, an EL layer, and an anode is referred to as an EL element, and includes an EL layer between two types of stripe-shaped electrodes provided to be orthogonal to each other. There are two types: a formation method (simple matrix method), and a method of forming an EL layer between a pixel electrode connected to a TFT and arranged in a matrix and an opposing electrode (active matrix method).

According to the present invention, since there is no need to rotate a substrate, a deposition apparatus capable of supporting a large-area substrate can be provided. Further, it is possible to provide an evaporation apparatus which can obtain a uniform film thickness even when a large-area substrate is used.

According to the present invention, the distance between the substrate and the evaporation source holder can be reduced, and the size of the evaporation apparatus can be reduced. And since a vapor deposition apparatus becomes small, adhesion of the sublimated vapor deposition material to the inner wall in a film formation chamber or an anti-adhesion shield is reduced, and the vapor deposition material can be used effectively.

According to the present invention, it is possible to provide a manufacturing apparatus in which a plurality of film forming chambers for performing a vapor deposition process are continuously arranged. As described above, when the parallel processing is performed in a plurality of deposition chambers, the processing speed of the light-emitting device is improved.

According to the present invention, it is possible to provide a manufacturing system that enables a container in which a vapor deposition material is sealed, a film thickness monitor, and the like to be directly installed in a vapor deposition apparatus without being exposed to the atmosphere. According to the present invention, the evaporation material can be easily handled and contamination of the evaporation material with impurities can be avoided. With such a manufacturing system, the container sealed by the material maker can be directly installed on the vapor deposition device, preventing the vapor deposition material from adhering to oxygen and water, and supporting further ultra-high purity light emitting devices in the future. It becomes.

最 良 The best embodiment of the present invention will be described below.

FIG. 7 illustrates a deposition holder that moves in the X direction or the Y direction in the film formation chamber.

FIG. 7A shows a state in which the evaporation material 302 in the container 301 is evaporated by heating with the heating means 303 connected to the power supply 307 with the slide shutter 306 opened. It is. Note that a film thickness monitor 305 is attached to the vapor deposition holder 304, and the film thickness can be controlled with the shutter open by adjusting the heating temperature of the power supply 307 and the moving speed of the vapor deposition holder 304.

FIG. 7B shows a state in which the sliding shutter 306 is closed. A hole is formed in the shutter 306, and the material discharged obliquely from the hole is directed to the direction of the film thickness monitor 305. Although FIG. 7 shows an example in which the interval between the container 301 and the shutter 306 is wide, the interval may be small or not, that is, the container 301 and the shutter 306 may be close to each other. Even if they are brought into close contact with each other, the pressure inside the container can be leaked because the minute holes are opened.

7A and 7B show an example of the evaporation holder provided with one container 301, but FIGS. 8A and 8B show a case where co-evaporation or the like is performed. Shows a deposition holder provided with a plurality of containers 202.

膜厚 As shown in FIGS. 8A and 8B, a film thickness monitor 201 is provided in each of two containers 202, and one of the containers 202 is installed at an angle to the substrate 201. A heater is used as a heating means, and vapor deposition is performed by a resistance heating method. In addition, at the time of vapor deposition, as shown in FIG. 8A, the shutter is moved below the substrate with the shutter open. When there is no deposition holder below the substrate 201, the deposition is stopped by the shutter 204 having a small hole.

さ せ る Such a deposition source holder is moved in a two-dimensional plane in a zigzag manner in the film forming chamber as shown in FIG. 2A or 2B.

A multi-chamber manufacturing apparatus provided with the above film formation chamber (an example is shown in FIG. 1) is a device for forming a layer containing an organic compound without exposure to air to prevent moisture from entering the layer containing the organic compound. Steps from formation to sealing can be performed.

本 The present invention having the above configuration will be described in more detail with reference to the following embodiments.

In this embodiment, FIG. 1 shows an example of a multi-chamber manufacturing apparatus in which the processes from the first electrode to the sealing are fully automated.

FIG. 1 shows gates 100a to 100y, an extraction chamber 119, transfer chambers 102, 104a, 108, 114, 118, delivery chambers 105, 107, 111, a preparation chamber 101, a first film formation chamber 106H, A second deposition chamber 106B, a third deposition chamber 106G, a fourth deposition chamber 106R, a fifth deposition chamber 106E, other deposition chambers 109, 110, 112, 113, 131, 132, and vapor deposition Installation chambers 126R, 126G, 126B, 126E, 126H for installing sources, pretreatment chambers 103a, 103b, sealing chamber 116, mask stock chamber 124, sealing substrate stock chamber 130, cassette chambers 120a, 120b And a tray mounting stage 121.

Hereinafter, a procedure in which a substrate provided with a thin film transistor, an anode (first electrode), and an insulator covering an end portion of the anode in advance is loaded into the manufacturing apparatus illustrated in FIG. 1 and a light-emitting device is manufactured will be described.

First, the substrate is set in the cassette chamber 120a or the cassette chamber 120b. When the substrate is a large substrate (for example, 300 mm × 360 mm), the substrate is set in the cassette chamber 120 a or 120 b. When the substrate is a normal substrate (for example, 127 mm × 127 mm), the substrate is transferred to the tray mounting stage 121 and the tray (for example, 300 mm × 360 mm). × 360 mm).

Next, the substrate provided with the plurality of thin film transistors, the anode, and the insulator covering the end of the anode is transferred to the transfer chamber 118.

Before forming a film containing an organic compound, it is preferable to perform annealing for degassing in vacuum in order to remove moisture and other gases contained in the substrate. Then, it may be transported to the pretreatment chamber 123 where annealing is performed.

In the film formation chamber 112, a hole injection layer made of a polymer material may be formed by an inkjet method, a spin coating method, or the like. A poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS), a polyaniline / camphorsulfonic acid aqueous solution (PEDOT / PSS) acting as a hole injection layer (anode buffer layer) on the first electrode (anode) PANI / CSA), PTPDES, Et-PTPDEK, PPBA, or the like may be applied and fired over the entire surface. The firing is preferably performed in the bake chamber 123. When a hole injection layer made of a polymer material is formed by a coating method using spin coating or the like, the flatness is improved, and the coverage and uniformity of the film formed thereon are improved. be able to. In particular, since the thickness of the light emitting layer becomes uniform, uniform light emission can be obtained. In this case, after the hole injection layer is formed by a coating method, it is preferable to perform vacuum heating (100 to 200 ° C.) immediately before film formation by a vapor deposition method. Note that, for example, after the surface of the first electrode (anode) is washed with a sponge, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) is coated on the entire surface with a film thickness of 60 nm by spin coating. Preliminary baking at 80 ° C. for 10 minutes, main baking at 200 ° C. for 1 hour, and furthermore, vacuum heating (170 ° C., heating 30 minutes, cooling 30 minutes) immediately before vapor deposition and vapor deposition without exposure to air. Is formed. In particular, when unevenness or fine particles exist on the surface of the ITO film, these effects can be reduced by increasing the thickness of PEDOT / PSS.

In addition, PEDOT / PSS has poor wettability when applied on an ITO film, so after applying the PEDOT / PSS solution for the first time by spin coating, it is washed once with pure water to improve wettability. Then, it is preferable that the PEDOT / PSS solution is applied again by the spin coating method for the second time, followed by baking to form a film with good uniformity. After the first application, the surface can be modified by once washing with pure water, and the effect of removing fine particles can be obtained.

When PEDOT / PSS is formed by spin coating, the film is formed on the entire surface, so that the end face, peripheral edge, terminals, connection area between the cathode and the lower wiring of the substrate can be selectively removed. Preferably, it is preferably removed by O ₂ ashing or the like in the pretreatment chamber 103a.

Next, the wafer is transferred to the preparation chamber 101 from the transfer chamber 118 provided with the substrate transfer mechanism. In the manufacturing apparatus of the present embodiment, the loading chamber 101 is provided with a substrate reversing mechanism, and the substrate can be appropriately reversed. The preparation chamber 101 is connected to a vacuum exhaust processing chamber, and it is preferable that the chamber is evacuated and then an inert gas is introduced to maintain the atmospheric pressure.

Then, it is transferred to the transfer chamber 102 connected to the preparation chamber 101. It is preferable to pre-evacuate and maintain a vacuum so that moisture and oxygen are not present in the transfer chamber 102 as much as possible.

The vacuum evacuation chamber is provided with a magnetically levitated turbo molecular pump, a cryopump, or a dry pump. Thereby, the ultimate vacuum degree of the transfer chamber connected to the charging chamber can be set to 10 ⁻⁵ to 10 ⁻⁶ Pa, and the reverse diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as a gas to be introduced. These gases introduced into the apparatus are those that have been highly purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition device after being highly purified. Accordingly, oxygen, water, and other impurities contained in the gas can be removed in advance, so that introduction of these impurities into the device can be prevented.

In the case where a film containing an organic compound formed in an unnecessary portion is to be removed, the film may be transferred to the pretreatment chamber 103a and a stack of the organic compound film may be selectively removed. The pretreatment chamber 103a has a plasma generation unit, and performs dry etching by exciting one or more types of gas selected from Ar, H, F, and O to generate plasma.

In order to eliminate shrinkage, it is preferable to perform vacuum heating immediately before deposition of a film containing an organic compound, and transport the film to the pretreatment chamber 103a to thoroughly remove moisture and other gases contained in the substrate. For this purpose, annealing for degassing is performed in a vacuum (5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa). In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition, moisture is easily absorbed depending on the organic resin material, and further degassing may occur. Therefore, before forming a layer containing an organic compound, After heating at 100 ° C. to 250 ° C., preferably 150 ° C. to 200 ° C., for example, for 30 minutes or more, it is effective to perform natural cooling for 30 minutes to perform vacuum heating for removing adsorbed moisture.

Further, the pretreatment chamber 103b is preferably a multi-stage vacuum heating chamber as shown in FIG. In FIG. 13, C is a vacuum chamber, 1 is a constant temperature bath, 2 is a frame, 3 is a heater, 4 is a slot for heating a substrate, and 5 is a substrate holder. The substrate to be processed held in each slot 4 is uniformly heated by heaters above and below it. The thermostat 1 can be provided with a total of seven substrates, one in the slot 4.

Next, after performing the above-described vacuum heating, the substrate is transferred from the transfer chamber 102 to the film formation chamber 106H, and vapor deposition is performed. Next, after transferring the substrate from the transfer chamber 102 to the transfer chamber 105, the substrate is further transferred from the transfer chamber 105 to the transfer chamber 104a without touching the atmosphere.

After that, the substrate is appropriately transferred to the film formation chambers 106R, 106G, 106B, and 106E connected to the transfer chamber 104a, and the organic compound layer made of a low molecule to be a hole injection layer, a hole transport layer, or a light emitting layer is removed. Form. Here, the film forming chambers 106R, 106G, 106B, 106E, and 106H will be described.

In each of the film forming chambers 106R, 106G, 106B, 106E, and 106H, a movable evaporation source holder is provided. A plurality of the evaporation source holders are prepared, and a plurality of containers (crucibles) in which an EL material is sealed are appropriately provided, and are set in this state in a film forming chamber.

設置 It is preferable to install the EL material in these film forming chambers by using the following manufacturing system. That is, it is preferable to form a film using a container (typically, a crucible) in which an EL material is stored in advance by a material maker. Further, it is preferable that the crucible is installed without being exposed to the atmosphere when it is installed, and it is preferable that the crucible is introduced into the film forming chamber while being sealed in the second container when transported from a material maker. Preferably, the installation chambers 126R, 126G, 126B, 126H, 126E having vacuum exhaust means connected to each of the film formation chambers 106R, 106G, 106B, 106H, 106E are evacuated or have an inert gas atmosphere. The crucible is taken out of the container and the crucible is set in the film forming chamber. By doing so, the crucible and the EL material stored in the crucible can be prevented from being contaminated. The installation chambers 126R, 126G, 126B, 126H, and 126E may be stocked with a metal mask.

By appropriately selecting an EL material to be provided in the film formation chambers 106R, 106G, 106B, 106H, and 106E, the light emitting element as a whole can be monochromatic (specifically, white) or full color (specifically, red, green, or blue). A light-emitting element which emits light of ()) can be formed.

Note that an organic compound layer that emits white light is a three-wavelength type containing three primary colors of red, green, and blue and a blue / yellow or blue-green / orange color when light-emitting layers having different emission colors are stacked. They are roughly classified into two-wavelength types using the relationship of complementary colors. When a white light emitting element is obtained using a three-wavelength type, a plurality of deposition source holders are prepared in one film forming chamber, and an aromatic diamine (TPD) for forming a white light emitting layer is provided in a first deposition source holder. 2 of the deposition source p-EtTAZ the holder to form a white light emitting layer, Alq _3, Alq ₃ in the fourth evaporation source holder in forming the white light emitting layer in the third evaporation source holder to form a white light-emitting layer An EL material obtained by adding NileRed, which is a red light-emitting dye, to the fifth evaporation source holder is sealed with Alq _{3, and} is placed in each film forming chamber in this state. Then, the first to fifth deposition source holders start moving in order, perform deposition on the substrate, and stack. Specifically, the TPD is sublimated from the first evaporation source holder by heating, and is evaporated on the entire surface of the substrate. Thereafter, p-EtTAZ is sublimated from the second evaporation source holder, Alq ₃ is sublimated from the _third evaporation source holder, Alq ₃ : NileRed is sublimated from the fourth evaporation source holder, and the fifth evaporation source holder Alq ₃ is sublimated from the substrate and deposited on the entire surface of the substrate. Thereafter, if a cathode is formed, a white light emitting element can be obtained.

After the layers containing the organic compound are appropriately laminated by the above steps, the substrate is transferred from the transfer chamber 104a to the transfer chamber 107, and further, the substrate is transferred from the transfer chamber 107 to the transfer chamber 108 without being exposed to the atmosphere. .

Next, the substrate is transferred to the film formation chamber 110 by a transfer mechanism provided in the transfer chamber 108 to form a cathode. The cathode is formed by a metal film formed by an evaporation method using resistance heating (an alloy such as MgAg, MgIn, AlLi, or CaN, or an element belonging to Group 1 or 2 of the periodic table and aluminum by a co-evaporation method). Film). A cathode may be formed in the film formation chamber 132 by using a sputtering method. Further, a transparent conductive film (ITO (indium tin oxide alloy), ITSO, indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like) is formed in the film formation chamber 109 by a sputtering method. A film may be formed.

Alternatively, the protective film may be transferred to the film formation chamber 113 connected to the transfer chamber 108 and formed using a silicon nitride film or a silicon nitride oxide film. Here, a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride is provided in the film formation chamber 113. For example, a silicon nitride film can be formed by using a silicon target and setting the atmosphere in a deposition chamber to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.

Through the above steps, a light emitting element having a laminated structure is formed.

Next, the substrate on which the light emitting elements are formed is transferred from the transfer chamber 108 to the transfer chamber 111 without being exposed to the atmosphere, and further transferred from the transfer chamber 111 to the transfer chamber 114. Next, the substrate on which the light emitting elements are formed is transferred from the transfer chamber 114 to the sealing chamber 116.

The sealing substrate is set in the load chamber 117 from the outside and prepared. Note that it is preferable to perform annealing in advance in vacuum to remove impurities such as moisture. In the case where a sealing material for bonding to a substrate provided with a light emitting element is formed on the sealing substrate, the sealing material is formed in a sealing chamber, and the sealing substrate on which the sealing material is formed is sealed in a sealing substrate stock chamber. It is transported to 130. Note that a desiccant may be provided on the sealing substrate in the sealing chamber. Note that although an example in which a sealant is formed over a sealing substrate is described here, the present invention is not particularly limited thereto. A sealant may be formed over a substrate over which a light-emitting element is formed.

Next, the sealing chamber 116 is bonded to the substrate and the sealing substrate, and the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 116 to cure the sealant. Note that, here, an ultraviolet curable resin is used as a sealant, but there is no particular limitation as long as it is an adhesive.

Next, the pair of bonded substrates is transported from the sealing chamber 116 to the transport chamber 114 and from the transport chamber 114 to the unloading chamber 119 and taken out. FIG. 9 is a diagram in which the above route is indicated by an arrow.

As described above, by using the manufacturing apparatus shown in FIG. 1, it is not necessary to expose the light-emitting element to the atmosphere until the light-emitting element is completely enclosed in a closed space, so that a highly reliable light-emitting device can be manufactured. Note that in the transfer chambers 114 and 118, vacuum and a nitrogen atmosphere at atmospheric pressure are repeated, but it is desirable that the transfer chambers 102, 104a, and 108 always maintain a vacuum.

Although not shown here, there is provided a control controller for controlling the path for moving the substrate to each processing chamber to realize full automation.

Further, in the manufacturing apparatus shown in FIG. 1, a substrate provided with a transparent conductive film (or a metal film (TiN)) is carried in as an anode, a layer containing an organic compound is formed, and then a transparent or translucent cathode (for example, By forming a thin metal film (a laminate of a transparent conductive film and Al and Ag), it is also possible to form an upward emission type (double emission) light emitting element.

In the manufacturing apparatus shown in FIG. 1, a substrate provided with a transparent conductive film as an anode is carried in, a layer containing an organic compound is formed, and then a cathode made of a metal film (Al, Ag) is formed. It is also possible to form a downward emission type light emitting element.

The present embodiment can be freely combined with the above-described best mode.

In the present embodiment, an example that is partially different from the manufacturing apparatus of the first embodiment, specifically, an example of a manufacturing apparatus including six film forming chambers 1006R, 1006G, 1006B, 1006R ', 1006G', and 1006B 'in a transfer chamber 1004a Is shown in FIG.

In FIG. 10, the same symbols are used for the same parts as in FIG. The description of the same parts as those in FIG. 1 is omitted here for simplification.

FIG. 10 shows an example of an apparatus capable of manufacturing full-color light-emitting elements in parallel.

After the substrate heated in vacuum in the pretreatment chamber 103 in the same manner as in the first embodiment is transferred from the transfer chamber 102 to the transfer chamber 1004a via the transfer chamber 105, the first substrate is formed in the film formation chambers 1006R and 1006G. , 1006B, and the second substrate is stacked along a path passing through the film forming chambers 1006R ′, 1006G ′, and 1006B ′. As described above, by performing vapor deposition on a plurality of substrates in parallel, the processing speed can be improved. In the subsequent steps, if a cathode is formed and sealed according to the first embodiment, the light emitting device is completed.

Further, as shown in FIG. 11, which shows a sequence from the substrate loading to the substrate unloading, the R, G, and B hole transporting layer, the light emitting layer, and the electron transporting layer are laminated in three different film forming chambers. Good. In FIG. 11, mask alignment is performed before vapor deposition, and a film is formed only in a predetermined region. In order to prevent color mixing, it is preferable to use different masks, and in the case of FIG. 11, three masks are required. In the case of processing a plurality of substrates, for example, the first substrate is loaded into the first deposition chamber, a layer containing an organic compound emitting red light is deposited, the substrate is unloaded, and then the second deposition is performed. The second substrate may be carried into the first deposition chamber and a layer containing a red-emitting organic compound may be formed while the substrate is carried into a chamber and a layer containing a green-emitting organic compound is formed. Finally, the first substrate is carried into the third film formation chamber, and while the layer containing the organic compound emitting blue light is being formed, the second substrate is carried into the second film formation chamber. The substrates may be carried into the first film formation chamber and sequentially laminated.

Further, as shown in FIG. 12 (A) showing a sequence from the loading of the substrate to the unloading of the substrate, the hole transport layer, the light emitting layer, and the electron transport layer of R, G, and B are laminated in the same film forming chamber. May be. When a hole transporting layer, a light emitting layer, and an electron transporting layer are successively laminated for R, G, and B in the same film forming chamber, the mask is shifted during mask alignment as shown in FIG. By doing so, RGB and three types of material layers may be selectively formed. In FIG. 12B, reference numeral 10 denotes a substrate, 15 denotes a shutter, 17 denotes a vapor deposition holder, 18 denotes a vapor deposition material, and 19 denotes a vaporized vapor deposition material. A state in which the vapor deposition mask 14 is shifted for each layer containing an organic compound. It is shown. In this case, the mask is common, and only one mask is used.

Further, a substrate 10 and an evaporation mask 14 are provided in a film forming chamber (not shown). Further, it is preferable to confirm the alignment of the evaporation mask 14 using a CCD camera (not shown). A container in which a vapor deposition material 18 is sealed is provided in the vapor deposition source holder 17. The film forming chamber 11 is evacuated to a vacuum degree of 5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa by means of a reduced pressure atmosphere. At the time of vapor deposition, the vapor deposition material is previously sublimated (vaporized) by resistance heating, and scatters in the direction of the substrate 10 by opening the shutter 15 during vapor deposition. The evaporated material 19 scatters upward and is selectively deposited on the substrate 10 through an opening provided in the deposition mask. Note that it is preferable that the microcomputer can control the film forming speed, the moving speed of the evaporation source holder, and the opening and closing of the shutter. The deposition rate can be controlled by the moving speed of the deposition source holder. Although not shown, vapor deposition can be performed while measuring the thickness of the vapor deposition film using a quartz oscillator provided in a film formation chamber. When measuring the film thickness of the deposited film using this quartz oscillator, a change in the mass of the film deposited on the quartz oscillator can be measured as a change in the resonance frequency. In the vapor deposition apparatus, at the time of vapor deposition, the distance d between the substrate 10 and the vapor deposition source holder 17 is typically reduced to 30 cm or less, preferably 20 cm or less, more preferably 5 cm to 15 cm, and the utilization efficiency and processing of the vapor deposition material are reduced. Speed has been greatly improved. Further, the evaporation source holder 17 is provided with a mechanism capable of moving in the X direction or the Y direction in the film forming chamber while keeping the horizontal position. Here, the evaporation source holder 17 is moved in a zigzag manner as shown in FIG. 2A or 2B on a two-dimensional plane.

When the hole transport layer and the electron transport layer can be used in common, after the hole transport layer is formed, the light emitting layers made of different materials are selectively laminated with different masks, and then the electron transport layer is formed. May be laminated. In this case, three masks are used.

This embodiment can be freely combined with the best mode or Embodiment 1.

Since the entire surface of the substrate can be efficiently heated by the sheath heater, the occurrence or reduction of shrinkage can be prevented, and the reliability of the light emitting element can be greatly improved.

The figure which shows the manufacturing apparatus of this invention. FIG. 4 is a diagram illustrating a movement path of a deposition holder according to the present invention. FIG. 4 is a view showing an evaporation source holder (having a hole in a shutter) of the present invention. The figure which shows the crucible conveyance to the vapor deposition source holder in an installation room. The figure which shows the crucible conveyance to the vapor deposition source holder in an installation room. The figure which shows the transport container of this invention. FIG. 3 is a diagram showing opening and closing of a shutter of an evaporation source holder (one container) of the present invention. FIG. 3 is a view showing opening and closing of a shutter of a deposition source holder (a plurality of containers) of the present invention. FIG. 3 is a diagram showing a sequence of the manufacturing apparatus of the present invention. The figure which shows the manufacturing apparatus of this invention. (Example 2) It is a figure showing an example of a sequence. (Example 2) It is a figure showing an example of a sequence. (Example 2) It is a figure showing a multi-stage vacuum heating room.

Explanation of reference numerals

101: preparation chamber 102: transfer chamber 103a: pretreatment chamber (bake, O ₂ plasma, H ₂ plasma, Ar plasma, etc.)
103b: Pretreatment chamber (multistage vacuum heating chamber)
104a: transfer chamber 104b: transfer mechanism 104c: substrate 105: delivery room

Claims (8)

A load chamber, a transfer chamber connected to the load chamber, and a manufacturing apparatus having a plurality of film formation chambers and a processing chamber connected to the transfer chamber,
The plurality of film forming chambers are connected to an evacuation processing chamber that evacuates the film forming chamber, and an alignment unit that aligns a mask and a substrate, a substrate holding unit, an evaporation source holder, and the evaporation source holder. Means for moving
The vapor deposition source holder has a container in which a vapor deposition material is sealed, means for heating the container, and a shutter provided on the container,
The apparatus is characterized in that the processing chamber is connected to a vacuum exhaust processing chamber for evacuating, and a plurality of flat plate heaters are arranged at intervals so as to vacuum heat a plurality of substrates. A load chamber, a transfer chamber connected to the load chamber, and a manufacturing apparatus having a plurality of film formation chambers and a processing chamber connected to the transfer chamber,
The plurality of film forming chambers are connected to an evacuation processing chamber that evacuates the film forming chamber, and an alignment unit that aligns a mask and a substrate, a substrate holding unit, an evaporation source holder, and the evaporation source holder. Means for moving
The vapor deposition source holder has a container in which a vapor deposition material is sealed, means for heating the container, and a shutter provided on the container,
The manufacturing apparatus is characterized in that the processing chamber is connected to a vacuum exhaust processing chamber for evacuating, and generates plasma by introducing a hydrogen gas, an oxygen gas, or a rare gas. 3. The manufacturing apparatus according to claim 2, wherein a plurality of flat plate heaters are arranged in the transfer chamber at an interval, and a processing chamber capable of vacuum heating a plurality of substrates is connected. 4. The device according to claim 1, wherein the means for moving the evaporation source holder has a function of moving the evaporation source holder in the X-axis direction at a certain pitch and moving the evaporation source holder in the Y-axis direction at a certain pitch. A manufacturing apparatus characterized in that: The manufacturing apparatus according to any one of claims 1 to 4, wherein the deposition holder rotates when switching from the X-axis direction to the Y-axis direction. The manufacturing apparatus according to any one of claims 1 to 5, wherein the shutter has a hole having an opening area S2 smaller than the opening area S1 of the container. The manufacturing apparatus according to any one of claims 1 to 6, wherein the evaporation source holder is provided with a film thickness monitor. The manufacturing apparatus according to any one of claims 1 to 7, wherein the rare gas element is one or more kinds selected from He, Ne, Ar, Kr, and Xe.

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