JP2004079557A - Plasma processing apparatus and plasma processing method - Google Patents

Abstract

A plasma processing apparatus capable of stably etching a nonvolatile material is provided.
A processing chamber, a processing gas introducing pipe for introducing a processing gas into the processing chamber, a mounting electrode disposed in the processing chamber for mounting and holding a sample, and a bias potential applied to the sample. A plasma processing apparatus comprising: a high-frequency power supply 9 for generating a bias potential for supplying a plasma gas; and an induction coil 12 for supplying high-frequency power to the processing gas to convert the processing gas into plasma. A conductive member 18 for supplying a bias potential to the portion, and a detachable trap member 22 having a reaction product attachment surface formed on another portion of the inner surface of the processing chamber.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma processing apparatus and a plasma processing method, and more particularly to a plasma processing apparatus and a plasma processing method suitable for etching a non-volatile etching material having a low vapor pressure of a reaction product.
[0002]
[Prior art]
High integration of semiconductor devices typified by LSIs is progressing more and more, and their design rules are being refined to the level of under-submicron. Accordingly, the pattern width of the internal wiring is also reduced. As an internal wiring material of a semiconductor device, highly doped polycrystalline silicon or an Al-based metal has been frequently used. However, in such an internal wiring material, wiring resistance increases with reduction in wiring width, and signal propagation delay and Deterioration of various migration resistances has become a problem. As a method for solving such a problem, a low-resistance metal material for wiring such as Cu metal, an Al—Cu alloy, or an Al—Si—Cu alloy is employed.
[0003]
In recent years, ferroelectric thin films such as lead titanate [PbTiO ₃ ], PZT [Pb (Zr, Ti) O ₃ ], and PLZT [(Pb, La) (Zr, Ti) O ₃ ] have been used as dielectric materials. Proposed next-generation LSIs have been proposed. DRAMs having memory cells utilizing the ferroelectricity of these materials, FRAMs (Ferroelectric RAMs) which are nonvolatile memories, and the like have already been realized on a trial production level or partially on a mass production level. In order to put these ferroelectric devices into practical use, it is particularly important to develop a technique for forming a ferroelectric thin film having excellent characteristics and also to develop an electrode patterning technique for the ferroelectric thin film. Conventionally, Pt metal is often used as an electrode material on a ferroelectric thin film from the viewpoint of stability of characteristics.
[0004]
Further, an iron-based material such as Fe or Ni-Fe is used for a new non-volatile memory LSI using the magnetism of a material typified by an MRAM (Magnetic Random Access Memory). In addition, various new material thin films such as Ru and Ir are being introduced one after another in order to realize next-generation LSI devices.
[0005]
When fine electrodes and wirings are formed by patterning the Cu-based metal or Pt, Fe-based material, etc., plasma etching using a halogen-based gas such as chlorine gas is mainly employed. Plasma etching is a technique for etching an object using ions and reactive neutral radicals that enter the object with energy.
[0006]
Plasma etching has played an important role mainly as a technique for patterning a Si, SiO ₂ , or Al-based wiring film with the progress of LSI manufacturing technology. At the time of etching, the material such as Si, SiO ₂ and Al is reacted with a gas such as chlorine, fluorine and bromine. By removing the reaction products generated during the reaction by the exhaust means, the etching can be continuously performed.
[0007]
However, materials such as Cu, Pt, and Fe, which are new materials that are expected to be newly introduced in the future, have low reactivity with a halogen gas, and the vapor pressure of a halide as a reaction product is low. That is, such a material (non-volatile material) is characterized in that its etching rate is low and the adhesion of its reaction product is extremely high.
[0008]
FIG. 2 is a diagram showing vapor pressures of indium and tin halides, which are metal elements used for a transparent conductive film ITO (indium tin oxide) used for a display or the like. In the figure, for example, in the case of tin, its chloride (SnCl ₄ ) has a vapor pressure of 10 Torr or more at room temperature. Therefore, it is possible to exhaust the gas by using a chlorine gas at the time of etching and converting tin into tin chloride. For this reason, tin can be positioned as a volatile material.
[0009]
On the other hand, in the case of indium, in order to obtain a vapor pressure of 10 Torr with indium chloride, it is necessary to heat at 650K, that is, near 400 ° C. That is, it is difficult to exhaust indium as a gas. Therefore, ITO is positioned as a nonvolatile material.
[0010]
Alumina (Al ₂ O ₃ ) and the like have a high vapor pressure of a chloride of Al, which is a constituent element, but alumina itself is extremely stable. No reactivity can be expected. Further, the product is not sufficiently decomposed and cannot necessarily be exhausted as aluminum chloride. Therefore, a material such as alumina is also positioned as a nonvolatile material. In addition, for example, FED Review Vol. 1 No. 26 2001, an Fe-based material uses a gas such as CO / NH ₃ and an etching technique for producing a carbonyl compound Fe (CO) x having a higher vapor pressure than chloride as a reaction product. Are known. That is, the gas can be exhausted by changing the gas used. However, even when such a gas system is used, the reactivity between the gas and the material to be etched is not as high as in the case of etching aluminum with chlorine.
[0011]
In the present specification, a material in which the vapor pressure of a reaction product is three orders of magnitude lower than SiCl ₄ which is a typical reaction product when ordinary Si or SiO ₂ is etched is defined as a non-volatile material. I will do it.
[0012]
In order to etch these non-volatile materials, it is known that it is effective to maintain a high temperature of an object to be processed in order to promote ion irradiation with a high bias and sublimation of a reaction product. For example, in the case of a Cu thin film, it can be etched using a mixed gas of CCl ₄ and N ₂ while being heated to 350 ° C. or higher. The 36th Annual Meeting of the Japan Society of Applied Physics (Spring Annual Meeting of 1989), p570 , Lecture number 1p-L-1. Here, Cu, which is a material to be etched, is sputter-etched with ions of high energy, and the chloride of the product, Cu, returns to the surface of the material to be etched again by keeping the material to be etched at a high temperature. Adhesion is prevented, thereby realizing etching of a nonvolatile material such as Cu.
[0013]
[Problems to be solved by the invention]
As described above, it has been confirmed at the experimental and trial production levels that patterning of these non-volatile materials by plasma etching can be realized by using high-temperature, high-bias process conditions, and new LSI devices using these materials have been confirmed. Is being prototyped. However, it is not easy to realize such non-volatile material plasma etching at a mass production level. That is, as described above, the vapor pressure of a reaction product generated when performing a plasma etching process on these nonvolatile materials is extremely small. For this reason, most of the reaction product is not exhausted by the exhaust means, but adheres to the wall surface of the chamber or the like.
[0014]
Even if there is no problem at the experimental / prototype level, the adhesion of the reaction product is a problem in a mass production line of LSI. In other words, when performing an etching process on these materials, only a few to several tens of wafers are processed, and a deposited film of a reaction product adheres thickly to the wall surface of the chamber. In such a case, it becomes difficult to continue the etching process because the plasma state changes or particles are generated. Therefore, in order to realize a non-volatile material etching apparatus applicable to a mass production line, how to treat this deposited film becomes a problem.
[0015]
The present invention has been made in view of such a problem, and provides a plasma processing apparatus and a plasma processing method capable of stably etching a nonvolatile material.
[0016]
[Means for Solving the Problems]
The present invention employs the following means in order to solve the above problems.
[0017]
A processing chamber, a processing gas introduction pipe for introducing a processing gas into the processing chamber, a mounting electrode placed in the processing chamber for mounting and holding a sample, and a high frequency power supply for generating a bias potential for supplying a bias potential to the sample And a plasma processing apparatus provided with an induction coil for supplying high-frequency power to the processing gas and converting the processing gas into plasma, wherein the processing chamber faces a part of an inner surface of the processing chamber and supplies a bias potential to the part. And a detachable trap member having a reaction product attachment surface formed on another portion of the inner surface of the processing chamber.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a diagram illustrating a plasma processing apparatus according to an embodiment of the present invention. In the figure, a processing chamber 1 is, for example, a vacuum vessel made of aluminum or stainless steel whose surface is anodized, and this vessel is electrically grounded. The processing chamber 1 includes a vacuum exhaust unit 2 and a transfer system 4 for loading and unloading a semiconductor wafer 3 as an object to be processed. A mounting electrode 5 for mounting the semiconductor wafer 3 is provided in the processing chamber 1. The transfer system 4 carries the wafer into the processing chamber and places the wafer on the placement electrode 5. The mounting electrode 5 electrostatically attracts and holds the wafer 5 by an electrostatic chuck (not shown).
[0019]
A high frequency power supply 9 having a frequency of several hundred KHz to several tens MHz is connected to the mounting electrode 5 via a matching unit 8. By adjusting the output of the power supply, the energy of ions incident on the semiconductor wafer 3 during the plasma processing can be controlled. In addition, a coolant passage (not shown) is provided in the mounting electrode 5, and the temperature of the wafer heated by the plasma during the processing is kept substantially constant by flowing the coolant through the passage. A susceptor 10 made of an insulating material is provided on the upper surface of the mounting electrode 5 other than the wafer mounting surface to protect the mounting electrode from plasma and reactive gas.
[0020]
A plasma source is disposed at a position facing the wafer 3 in the processing chamber 1. The figure shows an example in which an inductively coupled plasma source is used as a plasma source. As shown in the figure, the induction coil 12 is arranged on the air side of a dome-shaped insulator member 17 formed of an insulating material such as quartz or alumina ceramic so as to face the wafer 3.
[0021]
Further, a conductor member 18 is provided between the induction coil 12 and the insulator member 17. The conductor member 18 is made of a metal plate provided with radial slits as described later, and covers the dome-shaped insulator member 17 completely. The slit is formed at a position where the coil 12 exists and so as to cross the coil. This prevents the induced current caused by the current flowing through the induction coil from flowing into the plasma. A power supply line is drawn from the center of the induction coil 12, and a high-frequency power supply 16 of several hundred KHz to several tens MHz is connected to this power supply line via a power branch circuit 14 and a matching circuit 15. A processing gas outlet 20 is provided at substantially the center of the dome-shaped insulator member 17 at the upper part of the processing chamber. The processing gas is introduced into the chamber via the introduction pipe 21 and the outlet 20. It is desirable that the temperature of the entire processing chamber 1 be adjusted by a temperature adjustment mechanism (not shown).
[0022]
As described above, the power generated by the high-frequency power supply 16 is supplied to the induction coil 12 and the conductor 18. The induction coil 12 electromagnetically couples with the plasma to generate a high-density high-frequency inductively coupled plasma. The conductor member 18 draws ions in the plasma generated by the induction coil 12 to the surface of the processing chamber 1 by the generated high-frequency electric field. Therefore, it is possible to control the energy of the ions incident on the dome-shaped insulator member 17 by controlling the power supplied to the conductor member 18 and changing the high-frequency voltage generated in the conductor member 18. .
[0023]
In the example shown in FIG. 1, a dome-shaped insulator member 17 is used. However, the shape of the insulator member 17 can be flat as shown in FIG. Moreover, as shown in FIG. 4, it can be made cylindrical. In this case, the induction coil 12 is installed on the side surface of the cylindrical insulator member 17.
[0024]
Next, the arrangement of the conductor members 18 will be described. In the example shown in FIG. 1, the conductor member 18 is installed on the atmosphere side of the dome-shaped insulator member 17. However, the conductor member 18 may be installed on the vacuum side of the insulator member 17 as shown in FIG. However, in this case, it is desirable to provide an insulating cover 42 to protect the conductive member 18 disposed on the vacuum side (inside the processing chamber) from corrosive gas or plasma.
[0025]
When the conductor member 18 is installed on the vacuum side of the insulator member 17 as shown in FIG. 5, the induction coil 12 is embedded in the vacuum side or in the insulator member 17 as shown in FIG. Can be arranged as follows.
[0026]
Further, as shown in FIG. 7, a portion 18a of the conductor member 18 can be arranged on the atmosphere side of the insulator member 17, and the remaining portion 18b can be arranged on the vacuum side. Even if the same voltage is applied to the conductor member 18, the effect of the electric field by the portion 18a of the conductor member disposed on the atmosphere side remote from the plasma is smaller than that of the remaining portion 18b, so that the capacitor 43 having an appropriate value is used. It is desirable to connect the part 18a of the conductive member and the remaining part 18b by using a method such as to form a circuit configuration in which a higher voltage is generated on the part 18a side than the remaining part 18b of the conductive cover.
[0027]
Further, as shown in FIG. 8, the induction coil 12 is formed in a flat shape, and the flat-shaped coil is disposed close to the insulator member 17. Thereby, the flat induction coil 12 can be used as the conductor member 18 to which the power generated by the induction coil 12 and the high frequency power supply 16 is supplied. Therefore, in this case, the conductor member and the power branch circuit 14 shown in FIG. 1 are not required. However, in this case, although the configuration of the apparatus is simplified, it is impossible to independently control the density of the plasma and the incident ions.
[0028]
FIG. 9 is a diagram illustrating details of the above-described conductor member 18. As shown in the figure, the conductor member 18 is made of a metal plate provided with radial slits 41 and covers the dome-shaped insulator member 17. Further, the induction coil 12 is arranged on the upper surface of the conductor member 18.
[0029]
Next, a method for keeping the surface of the insulator member 17 clean using the conductor member 18 will be described.
[0030]
FIG. 10 is a diagram showing an etching / deposition rate of the insulator member 17 when platinum is etched with chlorine gas plasma under predetermined conditions, using the temperature of the insulator member 17 as a parameter. As shown in the figure, when the temperature of the insulator member 17 is set to 100 ° C., when the voltage applied to the conductor member 18 is low, the reaction product generated by the etching of platinum causes the insulator member 17 to react. Although it adheres to the surface, when the applied voltage is increased, the surface of the insulator member 17 starts to be etched with a threshold of about 500 Vpp (peak value from high frequency peak to peak value). Although it depends on the material and thickness of the insulating material, under the predetermined conditions, a voltage of 500 Vpp or more is supplied to the conductive member 18 so that the surface of the insulating member 17 can be cleaned even when platinum is etched. Can be kept.
[0031]
When the temperature of the insulator member 17 is increased to 350 ° C., even when the voltage applied to the conductor member 18 is low, the deposition of the reaction product can be substantially prevented. However, in consideration of the reliability of the vacuum seal portion between the insulator member 17 and the vacuum chamber 1, there is a limit to the prevention of deposition of deposits due to high temperature. Therefore, applying the bias voltage according to the present invention is more suitable for use in mass production lines.
[0032]
Next, a method for keeping the surface of the susceptor 10 clean will be described. The susceptor 10 is located very close to the wafer, and when a thick deposited film is formed on the susceptor surface, a large amount of particles are generated.
[0033]
A method for keeping the susceptor surface clean using wafer bias will be described with reference to FIG. As shown in FIG. 1, the output of the high frequency power supply 9 for wafer bias is applied to a susceptor bias application unit 27 installed on the side surface of the electrode via a matching unit 8 and a power branch circuit 26. By controlling the power applied to the bias applying unit 27, ions incident on the surface of the susceptor 10 can be controlled to prevent the deposition of reaction products, as in the case of the insulator member 17. . Special hardware such as a branch circuit is prepared by adjusting the thickness of the susceptor 10 so that a voltage is also generated on the susceptor surface within the range of the bias power condition used for etching the actual wafer. Without doing so, adhesion of the reaction product to the susceptor 10 can be prevented.
[0034]
As described above, the method of keeping the surfaces of the insulator member 17 and the susceptor 10 clean by controlling the energy of the ions incident on the susceptor 10 has been described. However, even if the reaction product is prevented from adhering to the surface of the insulator member 17 and the surface of the susceptor 10, the vapor pressure of the product in the etching process of the non-volatile material is low, so that it cannot be exhausted even by the exhaust pump. Eventually, the product will adhere to other parts of the processing chamber.
[0035]
Therefore, in the present invention, a member 22 (trap member) for attaching these products is provided downstream of the processing chamber.
[0036]
FIG. 11 is a diagram illustrating the configuration of the trap member. The trap member 22 includes an outer cylinder 22a that covers the inner wall of the processing chamber, an inner cylinder 22b that covers the outer wall of the mounting electrode, and a bottom plate 22c that covers the bottom of the processing chamber. The outer cylinder 22a and the bottom plate 22c are provided with a through hole 221 and an exhaust port 222 for loading and unloading a wafer, respectively.
[0037]
As shown in FIG. 11, the trap member has a structure that can be easily attached and detached. For example, by replacing the trap member with a cleaned one during maintenance, the downtime of the apparatus can be reduced. The trap member may be made of a metal material such as aluminum or stainless steel, or an insulating material such as quartz. The main surfaces in the processing chamber (the insulator member 17 and the upper portion of the mounting electrode (the wafer mounting portion and the susceptor 10)) ) Is almost covered.
[0038]
It is desirable that the surface of the trap member has irregularities in order to improve the adhesion of the reaction product. According to the experiments by the inventors, it is desirable that the surface roughness (Ra) of the trap member is 10 μm or more with respect to the etching reaction products of various nonvolatile thin films. Therefore, it is effective to provide irregularities on the surface of the trap member in advance by a method such as shot blasting. Further, the thickness of the deposit that can be held on the surface of the trap member is finite (if the deposit is too thick, it will peel off). For this reason, it is advantageous that the trap member has a large surface area in a macroscopic sense, and increasing the surface area within a range that does not hinder exhaust is effective in extending the life of the trap member.
[0039]
FIG. 12 is a diagram illustrating another configuration example of the trap member. As shown in the figure, a plurality of fins 223 are attached to the inner surface of the outer cylinder 22a.
[0040]
FIG. 13 is a diagram showing still another configuration example of the trap member. As shown in the figure, a plurality of irregularities 224 are provided on the inner surface of the outer cylinder 22a. The plurality of concavities and convexities can be provided in a dot shape or a line shape.
[0041]
FIG. 14 is a diagram showing still another configuration example of the trap member. As shown in the figure, a cylindrical part 225 is mounted concentrically inside the outer cylinder 22a. This structure facilitates handling during maintenance (particularly cleaning with a chemical solution).
[0042]
FIG. 15 is a diagram showing still another configuration example of the trap member. As shown in the figure, the outer cylinder 22a is formed in a funnel shape expanded on the downstream side, and a funnel-shaped part 226 expanded concentrically on the downstream side is mounted inside the outer cylinder 22a. By attaching the funnel-shaped part, the chamber downstream of the trap member cannot be seen from the discharge space, and the adhesion of products on the downstream side can be prevented.
[0043]
FIG. 16 is a diagram illustrating a surface covered with a conductor member and a surface covered with a trap member among the inner surfaces of the processing chamber 1.
[0044]
As described above, by supplying a high-frequency bias to the insulator member 17 via the conductor member, for example, by optimizing the thickness of the susceptor 10 and supplying the high-frequency bias to the susceptor, or Attaching the substrate 22 makes it possible to realize the etching process of the nonvolatile material at a mass production level.
[0045]
There are portions that cannot be protected by the trap member or the conductive member, such as openings such as a wafer loading / unloading hole 221 and an exhaust port 222, but other portions are supplied with a high-frequency bias (wall bias) by the conductive member. It is desirable to have a portion covered with a trap member.
[0046]
As shown in FIG. 16, when the processing chamber 1 is defined as a plasma generation space above the electrode surface of the mounting electrode 5 (on the side of the insulator member 17) (in the figure, a space of Φ500 × 150 mm), the chamber 1, It is desirable that at least 90% or more of the inner wall surface constituting the space such as the mounting electrode 5 be a portion whose ion energy can be controlled by applying a high-frequency bias voltage, or a detachable trap member.
[0047]
By the way, in the plasma processing apparatus shown in FIG. 1, the concentration of the reaction product in the processing chamber is highest near the upper part of the mounting electrode 3. For this reason, more reaction products adhere to the vicinity of the upper end of the outer cylinder 22a of the trap member, and the frequency of replacement of the trap member is limited by the deposits in this portion.
[0048]
FIG. 17 is a diagram for explaining a method of adjusting the amount of the reaction product deposited on the trap member. As shown in the figure, a gap is provided between the outer cylinder 22a of the trap member and the processing chamber 1, and the upper part of the outer cylinder 22a is floated from the wall of the processing chamber 1 so that the upper part of the outer cylinder 22a and the processing chamber 1 are separated. Insulate. The outer cylinder 22a is heated by the plasma 44 generated in the processing chamber 1. At this time, since the plasma density is high on the upper side, the upper part of the outer cylinder 22a of the trap member has a high temperature distribution, and as shown in FIG. 3, the deposition of the reaction product on the upper part of the outer cylinder 22a is suppressed.
[0049]
FIG. 18 is a view for explaining another method for adjusting the amount of the reaction product deposited on the trap member. As shown in the figure, the upper part of the outer cylinder 22a of the trap member is heated by a heating means 23 such as a halogen lamp and is maintained at a predetermined temperature. Thereby, the deposition of the reaction product on the upper portion of the outer cylinder 22a can be suppressed.
[0050]
FIG. 19 is a view for explaining still another method of adjusting the amount of the reaction product deposited on the trap member. In the figure, the outer cylinder 22a, the inner cylinder 22b, and the bottom plate 22c of the trap member each incorporate a heat source such as a sheathed heater (not shown) and a temperature sensor. Reference numeral 25 denotes a temperature controller, which supplies power to the outer cylinder 22a, the inner cylinder 22b, and the bottom plate 22c of the trap member via the feedthrough 24, and heats each of them to a predetermined temperature. As a result, the accumulation of the reaction product can be prevented from being concentrated on a specific portion, and the exchange frequency of the trap member can be prevented from being limited by the deposit on this portion.
[0051]
As described above, according to the present embodiment, the inner surface of a part of the processing chamber, which is necessary to keep the process constant and hinders the process processing due to generation of particles, reacts. Since the product is kept from accumulating, while the reaction product is concentrated on the exchangeable portion where there is no problem in the process, high process stability and simple maintenance can be realized.
[0052]
The present invention is not limited to the field of semiconductor device manufacturing, but can be applied to liquid crystal display manufacturing, film formation of various materials, or surface treatment. In addition, the present invention is effective not only for a non-volatile material etching apparatus but also for a plasma CVD apparatus in which a large amount of deposits adhere to a wall surface.
[0053]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a plasma processing apparatus and a plasma processing method capable of stably etching a nonvolatile material.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a plasma processing apparatus according to an embodiment of the present invention.
FIG. 2 is a view showing a vapor pressure of a halide.
FIG. 3 is a diagram illustrating the shape of an insulator member.
FIG. 4 is a view for explaining another example of the shape of the insulator member.
FIG. 5 is a diagram illustrating an example of the arrangement of conductive members.
FIG. 6 is a diagram illustrating an arrangement of an insulator member and an induction coil.
FIG. 7 is a diagram illustrating another example of the arrangement of the insulator member and the induction coil.
FIG. 8 is a diagram illustrating another example of an induction coil.
FIG. 9 is a diagram illustrating details of a conductor member.
FIG. 10 is a diagram illustrating an etching / deposition rate of an insulator member.
FIG. 11 is a diagram illustrating a configuration of a trap member.
FIG. 12 is a diagram illustrating another configuration of the trap member.
FIG. 13 is a diagram illustrating still another configuration of the trap member.
FIG. 14 is a diagram illustrating still another configuration of the trap member.
FIG. 15 is a diagram illustrating still another configuration of the trap member.
FIG. 16 is a diagram illustrating a surface covered with a conductor member and a surface covered with a trap member.
FIG. 17 is a view for explaining a method of adjusting the amount of reaction products deposited on the trap member.
FIG. 18 is a view for explaining another method for adjusting the amount of the reaction product deposited on the trap member.
FIG. 19 is a view for explaining still another method of adjusting the amount of reaction products attached to the trap member.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Processing chamber 2 Vacuum exhaust means 3 Semiconductor wafer 4 Transfer system 5 Mounting electrode 8, 15 Matching device 9, 16 High frequency power supply 10 Susceptor 12 Induction coil 14, 26 Power branching circuit 17 Insulator member 18 Conductor member 20 Processing gas Outlet 21 Gas introduction pipe 22 Trap member 23 Heating means 24 Feedthrough 25 Temperature controller 26 Power branch circuit 27 Susceptor bias applying section 41 Slit 43 Capacitor 44 Plasma

Claims (6)

A processing chamber, a processing gas introduction pipe for introducing a processing gas into the processing chamber, a mounting electrode placed in the processing chamber for mounting and holding a sample, and a high frequency power supply for generating a bias potential for supplying a bias potential to the sample And a plasma processing apparatus including an induction coil that supplies high-frequency power to the processing gas and converts the processing gas into plasma.
The processing chamber includes a conductor member opposed to a part of the inner surface of the processing chamber and configured to supply a bias potential to the part, and an attachment / detachment surface having a reaction product attachment surface formed on another part of the inner surface of the processing chamber. A plasma processing apparatus comprising a trap member capable of being used. A processing chamber, a processing gas introduction pipe for introducing a processing gas into the processing chamber, a mounting electrode placed in the processing chamber for mounting and holding a sample, and a high frequency power supply for generating a bias potential for supplying a bias potential to the sample And a plasma processing apparatus including an induction coil that supplies high-frequency power to the processing gas and converts the processing gas into plasma.
The processing chamber includes a conductor member for supplying a bias potential to a portion of the inner surface of the processing chamber, and a temperature at which a reaction product attachment surface is formed on another portion of the inner surface of the processing chamber. A plasma processing apparatus comprising an adjustable trap member detachably provided. In any one of claims 1 and 2,
The detachable trap member has a surface roughness (Ra) of 10 μm or more. In any one of claims 1 and 2,
The total of the surface covered with the conductor member, the mounting electrode surface to which a bias is applied by the susceptor bias applying unit, the sample mounting surface, and the surface covered with the trap member is the plasma generation space in the processing chamber. A plasma processing apparatus comprising 90% or more of the inner wall surface. In the description of claim 2,
The plasma processing apparatus, wherein the trap member includes a heating unit for adjusting a temperature of the trap member. A processing chamber, a processing gas introduction pipe for introducing a processing gas into the processing chamber, a mounting electrode placed in the processing chamber for mounting and holding a sample, and a high frequency power supply for generating a bias potential for supplying a bias potential to the sample And an induction coil for supplying high-frequency power to the processing gas, wherein the high-frequency power is supplied to the induction coil to convert the processing gas into plasma to process the sample,
The processing chamber includes a conductive member that covers a portion of the processing chamber and supplies a bias potential to a corresponding portion of the processing chamber inner surface, and has a removable surface formed with a reaction product attachment surface on another portion of the processing chamber inner surface. A plasma processing method comprising: replacing a trap member with a predetermined trap member at predetermined intervals.

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