JP2004078991A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for effectively preventing forgery of a paper or film-like medium.
An example of the solution is to embed a thin semiconductor chip with an antenna of 0.5 mm square or less in a medium, the side wall of the semiconductor chip is formed by an oxide film, and the semiconductor chip is separated by etching. . By limiting the size of the semiconductor chip to 0.5 mm or less, it is possible to improve bending and concentration overload, and it becomes a semiconductor chip without crack breakage due to etching separation. And a simple process can be adopted.
[Selection] Fig. 26A

Description

The present invention aims to prevent forgery of paper or film-like media, for example, various token device media, securities, various vouchers, important documents, IC cards, prepaid cards, etc., and a batteryless non-contact recognition system utilizing a semiconductor chip. Technology related to the means for realizing.

技術 As a technique related to the present invention, JP-A-8-50672 will be described first (Patent Document 1). This technology relates to a security thread recognition device for various token device media, in which metal patterns such as characters are embedded in various token device media, and this pattern is to be electrically detected by the presence or absence of metal. is there. Basically, it is difficult to forge by adding a metal pattern for the purpose of forging by applying advanced copy technology only to ordinary paper.

Next, a conventional technique disclosed in Japanese Patent Application Laid-Open No. 8-202844 will be described (Patent Document 2). This technique connects a semiconductor chip to a base material made of paper or synthetic paper using an anisotropic conductive paste.
FIG. 4 shows a prior art example. This indicates that there is a crack 42 from the chipping 41. In this figure, there is a possibility that the conductive particles 46 in the adhesive resin 45 may be short-circuited to the edge when the pad 43 is on the semiconductor chip 44 and the conductive particles 48 are on the substrate 49 because the antenna wiring 47 is on the substrate 49. It shows the role that contributes to the connection with the electrode.

FIG. 7 shows another conventional example. The adhesive resin 71 is formed by dispersing conductive particles 75 on a semiconductor chip having an aluminum pad 73 and a surface oxide film 74 on the surface of the device silicon layer 72, and the conductive particles 77 captured on the surface of the gold pad 77 are electrically connected to the antenna wiring 78. Are shown. The insulator 79 is a passivation film. FIG. 1 shows a cross-sectional structure of a semiconductor chip connected by a conventional anisotropic conductive adhesive.

JP-A-8-50672

JP-A-8-202844

The present inventor considers that the following problem exists in Japanese Patent Application Laid-Open No. Hei 8-50672 (Patent Document 1) disclosed as a prior art. That is, if countermeasures are taken against counterfeiting of various token device media, etc., it is considered that there is a technical added value in whether or not the forging method is easy. In this conventional example, it is described that a metal pattern is encapsulated in various token device media, but this method not only makes the pattern creation method easy but also has a danger close to recommending a forgery method. ing. Since anti-counterfeiting technology increases the reliability at the same time as the mission to improve security, there is a possibility that it will be completely no guard against advanced counterfeiting, and easy anti-counterfeiting technology will conversely increase counterfeiting It is necessary to think deeply about having In this case, although it is at the technical level of metal pattern creation, it is obvious that as long as the detection technology is the presence or absence of metal, it can be clarified without using advanced technology if opened and closely inspected. That is, since the presence or absence of a metal pattern is a necessary condition, it is sufficiently possible to select a means for realizing it at a normal technical level.

By the way, the present inventor considers a problem concerning Japanese Patent Application Laid-Open No. Hei 8-202844 (Patent Document 2). This technique is not a mere material change but a thin medium such as paper. It is considered that further investigation is required for the strength and the strength of the semiconductor chip. Considering the structure of this conventional example having a thickness of 100 μm or less, the way of solving the problem is completely different depending on whether there is no mechanical stress. That is, mounting a semiconductor chip on a thin paper-like medium requires clarification of different constraints. It is necessary to consider the thickness and size of the semiconductor chip. For example, whether a 1-mm semiconductor chip can withstand a normal use level with a paper having a thickness of 100 microns needs to be determined not from the fact that it can be formed structurally but from the viewpoint of using. The present inventor has considered that this known example alone is not enough to produce a thin medium having a thickness of 100 μm or less that can be practically used.

Next, problems in the conventional example of FIG. 4 will be described. Since semiconductor chips diced by a diamond blade are used in the peripheral processing of the semiconductor chips, when external stress is applied to the semiconductor chips, if the stress concentrates around the semiconductor chips, cracks such as cracks may occur, and the semiconductor chips may be damaged. Part or all functions are lost. When a semiconductor chip is encapsulated in a thin medium such as paper, stress such as bending or concentrated load is likely to be applied, so even if there is slight chipping or chipping around the semiconductor chip, there is a problem that leads to destruction of the semiconductor chip. .

Next, problems in the conventional example shown in FIG. 7 will be described. In this structure, there is no gold bump and no side effect to the anisotropic conductive adhesive or conductive adhesive around the semiconductor chip, that is, no consideration is given to an increase due to the presence of the gold bump in the vertical structure size, and no short circuit around the semiconductor. As a result, there is a problem in that the entire structure becomes abnormally thick due to the configuration of the semiconductor chip including the gold bumps, thereby preventing a structure resistant to bending from being obtained.

A first means for solving the above-mentioned problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and has a plurality of bits. Is transmitted to the semiconductor device.

A second means for solving the above problem is a semiconductor device in which a periphery of a semiconductor chip is formed of an insulating material, and terminals on the semiconductor are connected to terminals of a mounting substrate with a conductive adhesive. It is.

A third means for solving the above-mentioned problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the semiconductor chip is separated by etching and provided with an antenna in a paper or film medium. A semiconductor device is characterized by transmitting information of a plurality of bits inserted in a state.

A fourth means for solving the above-mentioned problem is that the semiconductor chip has a plane dimension of 0.5 mm or less on a long side and is inserted into a paper or film-like medium with an antenna and formed by electron beam direct drawing. And transmitting a plurality of bits of information.

A fifth means for solving the above-mentioned problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, a pad of the semiconductor chip is formed of tungsten, and an antenna is provided in a paper or film medium. And sends out a plurality of bits of information.

A sixth means for solving the above-mentioned problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side and one or a plurality of pads of the semiconductor chip are present on a device on a semiconductor main surface. A semiconductor device which is inserted into a film-like medium with an antenna and transmits a plurality of bits of information.

A seventh means for solving the above-mentioned problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side and is inserted into a paper or film-like medium with a built-in capacitor antenna to store a plurality of bits of information. It is a semiconductor device characterized by transmitting.

Eighth means for solving the above-mentioned problem is that the semiconductor chip has a long dimension of 0.5 mm or less on a long side and is inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information. A semiconductor device characterized in that the information is encrypted and printed on a medium.

A ninth means for solving the above problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side and a plurality of pads smaller than pads for connecting to an antenna to generate random numbers on the semiconductor chip. Semiconductor device.

A tenth means for solving the above problem is that a writable memory area exists in a semiconductor chip, an area for generating a first random number exists in the semiconductor chip, and the first random number is After being read and encrypted and written to the memory area, a second random number different from the random number is given to the semiconductor chip, the first random number is encrypted and read, and further read. The semiconductor device is characterized in that the content of the memory area is read out and returned to the second random number to confirm that the semiconductor chip is not forged.

An eleventh means for solving the above-mentioned problem is that a carrier wave is periodically amplitude-modulated in a plurality of frequency units and applied to a semiconductor chip with an antenna, and a leading edge of each cycle is used as a clock, and the semiconductor chip And transmitting one bit of information in the semiconductor chip by changing an antenna load in the semiconductor device.

A twelfth means for solving the above-mentioned problem is that a carrier is periodically amplitude-modulated in a plurality of frequency units and applied to a semiconductor chip with an antenna. The semiconductor chip has a counter, and a leading edge of each cycle is clocked. Is used as the input to the counter, and the output of the counter selects the memory output, and changes the antenna load in the semiconductor chip within the cycle to transmit one bit of information in the semiconductor chip. The feature is to provide a semiconductor device.

A thirteenth means for solving the above problem is a semiconductor device characterized in that a plurality of semiconductor chips share one antenna, and each semiconductor chip operates according to the load state of the antenna.

A fourteenth means for solving the above-mentioned problem is that all of physical information such as size, thickness, position and degree of a semiconductor chip which is inserted into a paper or film-like medium with an antenna and transmits a plurality of bits of information is provided. Alternatively, a semiconductor device is characterized in that part of the device is encrypted and printed.

A fifteenth means for solving the above problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the semiconductor chip is placed between two or more roll sheets in a paper or film medium. A semiconductor device which is inserted with an antenna and transmits a plurality of bits of information is provided.

A sixteenth means for solving the above problem is a fifteenth means for solving the above problem, in which an antenna smaller than the size of the semiconductor chip is mounted on the semiconductor chip, and the semiconductor chip is a paper or film medium. A semiconductor device is characterized in that a plurality of pieces of information are inserted therein and transmit a plurality of bits of information without interference.
A seventeenth means for solving the above problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and a plurality of bits are inserted. Is transmitted, and each semiconductor chip is not disposed at a folding position of an integral multiple of the medium.

An eighteenth means for solving the above-mentioned problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and has a plurality of bits. And the semiconductor device is characterized in that the corner of the semiconductor chip is tapered at least 1/100 of the long side length.

A nineteenth means for solving the above-mentioned problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and has a plurality of bits. The semiconductor device is characterized in that the semiconductor chip is present in the Braille projection.

A twentieth means for solving the above problem is that a plurality of semiconductor chips have a plane dimension of 0.5 mm or less on a long side, and the semiconductor chips are inserted into a paper or film medium with an antenna. A semiconductor device is characterized in that information of a plurality of bits is transmitted, and information of each semiconductor chip is printed on a medium in an encrypted pattern pattern.

A twenty-first means for solving the above problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and has a plurality of bits. Is transmitted, and a metal thicker than the semiconductor chip is bonded to the semiconductor chip.

A twenty-second means for solving the above-mentioned problem is that a semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a medium of Japanese paper with an antenna to store a plurality of bits of information. The semiconductor device is characterized in that the semiconductor chip is sent out, and the semiconductor chip is treated as a part of the washi fiber when the washi is made, and is mounted inside or on the surface of the washi.

A twenty-third means for solving the above-mentioned problem is the semiconductor device according to any one of claims 1 to 22, wherein the semiconductor chip is made of a silicon-on-insulator wafer.

A twenty-fourth means for solving the above-mentioned problem is a semiconductor device according to any one of claims 1 to 22, wherein the semiconductor chip is formed with a thickness of 50 microns or less.

A twenty-fifth means for solving the above-mentioned problem is at least a semiconductor device having an antenna and an IC semiconductor chip for transmitting and receiving information in a state where there is no electrical contact with a reader / writer. A width of a part connected to the IC semiconductor chip is smaller than a length of at least one side of the IC semiconductor chip.

A twenty-sixth means for solving the above-mentioned problem is that at least a semiconductor device having an antenna and an IC semiconductor chip for transmitting and receiving information in a state where there is no electrical contact with a reader / writer is provided. The antenna having a pair of fine wire conductors on the side where the antenna is provided and the opposite side thereof, wherein a cross-sectional area of a portion of the antenna connected to the IC semiconductor chip is smaller than an area of the IC semiconductor chip. Semiconductor device.

At least a twenty-seventh means for solving the above problems includes a step of forming the IC semiconductor chip on a semiconductor wafer, a step of bonding the semiconductor wafer to a predetermined support, and a step of separating the IC semiconductor chips from each other; 27. The method of manufacturing a semiconductor device according to claim 25, further comprising a step of simultaneously connecting the plurality of IC semiconductor chips separated on the support and the plurality of antennas.

A twenty-eighth means for solving the above-mentioned problem comprises a step of simultaneously connecting a plurality of linearly arranged IC semiconductor chips and a plurality of the antennas among the IC semiconductor chips separated on the support. A method of manufacturing a semiconductor device according to claim 27.

A twenty-ninth means for solving the above-mentioned problem comprises a step of simultaneously connecting a plurality of two-dimensionally arranged IC semiconductor chips and a plurality of the antennas among the IC semiconductor chips separated on the support. A method of manufacturing a semiconductor device according to claim 27.

A thirtieth means for solving the above-mentioned problem is at least a semiconductor device having an antenna and an IC semiconductor chip for transmitting and receiving information in a state where there is no electrical contact with a reader / writer. A semiconductor device having a pair of the antennas on a side where the antenna is provided and an opposite side thereof, wherein a main surface of the IC semiconductor chip is inclined with respect to a major axis direction of the antenna. .

The present invention is useful for preventing forgery of paper or film-like media, for example, various token device media, securities, various vouchers, important documents, IC cards, prepaid cards, and the like. Further, it is possible to realize a battery-less contactless recognition system utilizing a semiconductor chip.

FIG. 1 shows an embodiment of the present invention. The semiconductor chip side wall oxide film 11 is on the side of the device layer silicon 12, the pad 13 is on the surface of the semiconductor chip having the back surface oxide film 14 and the semiconductor chip side wall oxide film 15, and is connected to the antenna wiring 17 by the adhesive resin 16. The antenna wiring is formed on the surface of the substrate 18 with a conductive material such as silver paste. The conductive particles 19 are directly between the pad and the antenna wiring and contribute to the conduction in the vertical direction, but the conductive particles 19a are near the side of the semiconductor chip and do not directly contribute to the conduction between the pad and the antenna wiring. However, in the case of a semiconductor device in which the periphery of the semiconductor chip is formed of an insulating material and the terminals on the semiconductor are connected to the terminals of the mounting substrate with a conductive adhesive, the conductive particles are in contact with the edge of the semiconductor chip. However, there is no short circuit between the antenna wiring and the semiconductor chip. In addition, when a normal conductive adhesive is used instead of the anisotropic conductive adhesive, the effect is particularly remarkable. That is, even if the conductive adhesive contacts the edge of the semiconductor chip, it does not cause an electrical short.

(A) to (f) of FIG. 2 show another embodiment of the present invention. FIG. 2A shows a cross section of a step immediately after a semiconductor chip is completed in a wafer shape. In advance, the side wall oxide film shown in FIG. 1 is oxidized at a position where the semiconductor chip is separated in a wafer state, and is connected to the main surface and the oxide film of the oxide film layer 23. The pad 21 is formed on the device layer silicon 22, and the oxide film layer 23 has a sandwich structure sandwiched between the silicon substrate 24 and the device layer silicon. This structure is a silicon-on-insulator wafer. FIG. 2B is a cross-sectional view of a step immediately after the support tape is continuously attached to the main surface of the wafer. Reference numeral 30 in FIG. 2B indicates an adhesive layer. Hereinafter, reference numeral 30 indicates a similar adhesive layer. FIG. 2C shows a cross-sectional view immediately after the step of removing the silicon substrate 24 by etching with potassium hydroxide, hydrazine, ammonia, or the like. FIG. 2D is a cross-sectional view immediately after the photoresist 26 is applied to the back surface of the wafer and exposed and developed. The printing of the pattern of the portion to be separated into the semiconductor chip has been completed. FIG. 2E is a cross-sectional view of a step immediately after the etching groove 27 is formed. For the etching, hydrofluoric acid for etching an oxide film, a mixed solution thereof, or dry etching is used. FIG. 2F shows a cross-sectional view in which the semiconductor chip is expanded by the expanded support tape 28. In this way, a thin, small, and chipping-free semiconductor chip can be easily and economically produced. The semiconductor chip has a long dimension of 0.5 mm or less on a long side. The semiconductor chip is separated by etching as in the embodiment, and is inserted into a paper or film-like medium with an antenna and a plurality of chips are inserted. The present invention is characterized in that bit information is transmitted.

FIG. 3 shows another embodiment of the present invention. The pads 31 are formed on active devices such as a memory mat 32, a read circuit 33, a selector circuit 34, a transmission / reception circuit 36, and a power supply circuit 38. In this case, a pad having a large area can be formed in order to reliably and stably connect to the antenna wiring. A semiconductor chip side wall oxide film 35 exists around the semiconductor chip to prevent a short circuit with the conductive adhesive. The pad 31 is connected to a circuit by a through hole 37. The semiconductor chip has a small pad 39 for random number generation. In this portion, the semiconductor chip and the antenna can obtain a value whose analog value has changed due to the contact resistance between conductive particles between the latitude lines and the variation in capacitance with the ferroelectric substance. Therefore, analog-digital conversion is performed by the random number generation circuit 39a to convert the information into information. This value can be used as unique information that does not repeat like a human fingerprint, and can contribute to preventing forgery of a medium in which this semiconductor chip is used. Since this unique information is lost when the semiconductor chip and the antenna wiring are separated, it has a feature that is strong against tamper resistance, that is, forgery. As described above, one or a plurality of pads are present on a device on a semiconductor main surface, and are inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information. The device is characterized in that the semiconductor chip has a plane dimension of 0.5 mm or less on a long side and there are a plurality of pads on the semiconductor chip smaller than pads for connecting to an antenna to generate random numbers. This is effective for preventing forgery. In the memory mat 32, random numbers are arbitrarily printed on each semiconductor chip on a wafer with a small area by direct electron beam drawing.

(A) through (c) of FIG. 5 show another embodiment of the present invention. FIG. 5A is a plan view showing a state where the semiconductor chip 51 is connected to the antenna 52 and exists in the film-like medium. FIG. 5B is one of the cross-sectional views of FIG. 5A. The electrodes are taken from the front and back of the semiconductor chip, and antenna electrodes 1 and 55 forming a capacitor and antenna electrode 2 forming a capacitor are taken. , 56 are formed, and a capacitance is formed by these electrodes. This makes it possible to form a small semiconductor chip having no capacitance on the semiconductor chip side, and to produce a semiconductor chip that is economically advantageous in terms of yield. In FIG. 5C, a plurality of electrodes are taken from the surface of the semiconductor chip, antenna electrodes 3 and 57 forming a capacitor and antenna electrodes 4 and 58 forming a capacitor are taken, and a capacitance is formed by these electrodes. You. These semiconductor devices are characterized in that the semiconductor chip has a plane dimension of 0.5 mm or less on a long side and is inserted into a paper or film-like medium with an antenna with a built-in capacitor to transmit a plurality of bits of information. By doing so, it is possible to provide an economical and effective forgery prevention recognition function device.

FIG. 6 shows another embodiment of the present invention. The adhesive resin 61 has a backside oxide film 62, and in a semiconductor chip having a side wall oxide film 66 on the side of the device silicon layer 63, tungsten on the surface oxide film 66 is formed by an anisotropic conductive adhesive in which conductive particles 65 are dispersed. The pad 68 can be electrically connected to the antenna wiring 69 by the conductive particles 67. The combination of a semiconductor chip and an antenna that is thin and does not short-circuit is formed because the pad is formed of tungsten or a metal that does not oxidize, and the adoption of the sidewall oxide film. As described above, the semiconductor chip has a plane dimension of 0.5 mm or less on a long side, and the pad of the semiconductor chip is formed of tungsten, and is inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information. A forgery-preventing various token device medium, which is a semiconductor device characterized by being transmitted, is formed.

FIG. 8 shows another embodiment of the present invention. The medium surface printing pattern 81 is on the surface of a film-like medium 83, and includes a semiconductor chip 82 including an antenna therein. If only the information in the read-only memory of the semiconductor chip is emulated as it is, the resistance to forgery prevention will be lost, so if you encrypt that information and print it as a numerical value or pattern, it will be more rigorous to check for forgery be able to. In addition, since only a read-only memory is required for the semiconductor chip, the semiconductor chip can be manufactured in a small size. That is, the semiconductor chip has a plane dimension of 0.5 mm or less on a long side and is inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information, and encrypts the information to encrypt the medium. By forming a semiconductor device characterized by being printed thereon, various token device media and the like that are resistant to forgery are formed. As the encrypted print information, a combination of a special ink, a magnetic material, and the like is further used.

FIGS. 9A and 9B show another embodiment of the present invention. FIG. 9A is a plan view of the semiconductor chip 91. FIG. The conductive particles 92 are dispersed on the small pads 93. A writable memory area 97 exists in the semiconductor chip. FIG. 9B is a cross-sectional view in which the semiconductor chip 91 is connected to the antenna wiring 95 on the substrate 96 with the adhesive resin 94. Since the analog value changes due to the contact resistance between the conductive particles between the semiconductor chip and the antenna wiring and the variation in the capacitance with the ferroelectric material at the small pad portion of the semiconductor chip, analog-to-digital conversion is performed by the random number generation circuit. Go and computerize. This value can be used as unique information that does not repeat like a human fingerprint or ink pattern, and can contribute to preventing forgery of a medium in which the semiconductor chip is used. Since this unique information disappears when the semiconductor chip and the antenna wiring are separated and is difficult to reproduce, it has a feature that is strong against tamper resistance, that is, forgery.

FIG. 10 shows another embodiment of the present invention. This figure shows an embodiment of a protocol for preventing forgery using a semiconductor chip of the present invention and a random number generation circuit therein. There are mainly two types: open type and closed type. First, an embodiment of an open type protocol will be described. In the open type, an inquiry such as a reader / writer asks a semiconductor chip of the present invention on a film medium such as a card about a random number N generated by the semiconductor chip in the card at the time of initializing. After replying N, the card closes the N reading circuit by itself or by the command of the inquirer, and makes reading impossible. When the inquirer receives N, it registers it in the database. Next, at the time of operation, first, the inquirer inquires of the card ID. When the ID of the card is returned to the inquirer, the inquirer sends a random number to the card. The card encrypts the random number using N as a key and returns it to the inquirer. The inquirer compares the N obtained from the database with the numerical value decoded this time and regards it as a valid card if they are the same. In this embodiment, the card can be replaced and used without any particular limitation on the forming medium of the present invention, that is, various token device media, securities, and the like. Next, in the closed type, there is a writable memory area in the semiconductor chip, and at the time of initialization, the encrypted N is written from the inquirer into the memory area of the card. Thereafter, the N read circuit on the card side is closed. Next, a second random number different from the random number N in the semiconductor chip is given to the semiconductor chip, the random number N is encrypted and read out, and the contents of the memory area are read out, and the The card and the system are characterized by confirming that the semiconductor chip is not forged by returning to the second random number. As a result, N is safely checked, and authentication as a valid card is performed.

FIGS. 11A and 11B show another embodiment of the present invention. FIG. 11A shows a waveform of an electromagnetic wave sent from an inquirer to a paper or film-like medium including a semiconductor chip in the present invention. The frequency of the carrier is arbitrary, but the carrier is amplitude-modulated, and when the n-th clock 111 is applied, the data of the n-th address of the read-only memory is transmitted from the semiconductor chip. Therefore, the latter half of the clock cycle is a period during which the n-th data 112 is transmitted. Similarly, the period of the (n + 1) th clock 113 and the (n + 1) th data 114 follow. These operations are repeated to read the contents of the read-only memory in the semiconductor chip into the inquirer. That is, a carrier wave is periodically amplitude-modulated in a plurality of frequency units and given to a semiconductor chip with an antenna, using the leading edge of each cycle as a clock, and changing the antenna load in the semiconductor chip within the cycle to change the amplitude. A semiconductor device is characterized by transmitting one bit of information in a semiconductor chip. FIG. 11B shows a circuit block diagram in the semiconductor chip 118. The antenna 115 is connected to the rectifier 116 and supplies a voltage inside the semiconductor chip. At the same time, it enters the counter 119 and sends out data one bit at a time together with the selector 119a of the output of the ROM 117. These configurations constitute a small semiconductor chip. That is, a carrier wave is periodically amplitude-modulated in a plurality of frequency units and provided to a semiconductor chip with an antenna.The semiconductor chip has a counter, and is input to the counter using a leading edge of each cycle as a clock. Further, the semiconductor device is characterized in that the output of the counter selects the memory output, changes the antenna load in the semiconductor chip within the period, and transmits one bit of information in the semiconductor chip.

FIG. 12 shows another embodiment of the present invention. In the film medium 124, a first semiconductor chip 121 and a second semiconductor chip 123 are connected to both ends of an antenna 122. In general, a semiconductor device is formed in which a plurality of semiconductor chips share one antenna, and each semiconductor chip operates according to the load state of the antenna. In this way, it is possible to easily mount a plurality of semiconductor chips without having a complicated congestion circuit in the semiconductor chip and to assist other semiconductor chips in the event of breakage, thereby improving the reliability of the medium. Can be improved. Further, a system with higher security is constructed by giving unique information to a plurality of semiconductor chips, communicating each other's relationship, and transmitting data when a plurality of conditions are met.

FIG. 13 shows another embodiment of the present invention. The semiconductor chip 131 is sealed in a film-like medium 133 having an encrypted physical information entry field 132 on the surface. In order to prevent forgery, it is a necessary condition that it is difficult to accurately create physically the same thing and that the discrimination technology is sophisticated. It is difficult to make a semiconductor chip itself by using a high-level process technology, and without a manufacturing technology per se, it is difficult to make an imitation of a semiconductor chip called a clone. Semiconductor process technology is represented by the precision level of fine patterns. Therefore, even if the same function is realized, the higher the process technology, the smaller the semiconductor chip size, and the technical level improves over time, and if the function is the same, the physical shape becomes smaller, and if the physical shape is the same, Function will be improved. All or part of physical information such as size, thickness, position, and degree of physical information of a semiconductor chip that is inserted into a paper or film-like medium with an antenna and sends out multiple bits of information has been encrypted and printed. With the semiconductor device characterized in that the semiconductor chip and the mounting method are counterfeit products, it is easy to distinguish them.

FIG. 14 shows another embodiment of the present invention. There is a first cover film roll 141 and a second cover film roll 144, and a semiconductor chip 142 is inserted between the first cover film 145 and the second cover film 143 to complete a take-up roll 146. Is wound up. The material for the cover film is not particularly selected, such as paper, synthetic paper, plastic, cloth, and fiber cloth. The semiconductor chip is automatically picked up and positioned. An antenna is attached to the semiconductor chip in advance, or a printed or wire is provided on the first or second film and is bonded with a conductive adhesive at the time of insertion. On the intermediate bonding film surface where the semiconductor chip is inserted, another adhesive such as urethane-based, cyanol-based, or UV-curable is formed at low temperature and to ensure the flatness and rigidity of the completed medium at low temperatures. Is done.

FIGS. 15A and 15B show another embodiment of the present invention. FIG. 15A shows one form in which a plurality of semiconductor chips 151 are dispersedly arranged in a film medium 152. FIG. 15B shows an example in which a small antenna 154 is mounted on the semiconductor chip 151 of FIG. 15A. The shape and characteristics of the antenna differ depending on the radio frequency and energy used. As one method of forming an antenna, it is conceivable to use a semiconductor wiring process technique to form fine wiring into a coil shape. Also, if a multilayer wiring or copper wiring technique is used, it is possible to obtain a coil which is compact and has a low resistance and a long wiring length. Further, when the antenna is formed by using the on-semiconductor chip, the reliability of the antenna connection is increased, and the number of manufacturing steps is reduced, so that the semiconductor chip can be economically manufactured. In addition, if a plurality of semiconductor chips are dispersed and arranged on a medium, non-repeatability can be secured, and it becomes possible to compensate for a semiconductor failure, thereby preventing forgery and improving reliability. Can be. A semiconductor device having an antenna smaller than the size of a semiconductor chip mounted on the semiconductor chip, and inserting the plurality of semiconductor chips into a paper or film-like medium and transmitting a plurality of bits of information without interference. Is formed, it becomes easy to realize various token device media for preventing forgery.

FIG. 16 shows another embodiment of the present invention. A first antenna pad 161 and a second antenna pad 162 exist on the active device of the semiconductor chip and are connected to both ends of the antenna coil 163. Although a coil-shaped antenna is assumed in this drawing, each antenna terminal of a dipole antenna may be used. The first antenna pad is connected to a transmission / reception circuit of the semiconductor chip through a first through hole 164, and the second antenna pad is connected to a transmission / reception circuit of the semiconductor chip through a second through hole 165. In this way, a plurality of pads are provided on the active device to connect with an antenna and an external capacitor as necessary. The connection between the pad and the antenna terminal is performed by crimping or an adhesive. If an anisotropic conductive adhesive is used as the adhesive, it is possible to efficiently connect the plurality of pads and the wiring pattern of the substrate by one joining heating / pressing process.

FIG. 17 shows another embodiment of the present invention. FIG. 11 is a plan view of the embodiment showing that a tapered corner 171 is provided at a corner of a semiconductor chip. In order to increase the mechanical strength such as concentrated load and bending and to use the semiconductor chip area effectively by eliminating the cut width of the dicing blade, the semiconductor chips are separated by an etching technique. At this time, the pattern design of the separation groove is optimized to reduce the mechanical stress concentration by providing a tapered or round shape at the semiconductor chip corner. The semiconductor chip has a planar dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information, A semiconductor device having a high reliability can be obtained by using various forgery prevention token device media in the form of a semiconductor device characterized in that the corner of the semiconductor chip is tapered at least 1/100 of the long side length.

FIG. 18 shows another embodiment of the present invention. The concentrated load tool 181 is pressed against the film-like medium 182, and the semiconductor chip 183 is located below or near the neutral plane of the medium. The film-like medium has a silicon rubber 184 on a steel plate 185. Silicon rubber indicates an environment near a film-like medium in a real life space. The diameter of the concentrated load tool is 1 mm or more. This indicates an environment in which a concentrated load is applied in a real life space. As shown in FIG. 18, the film-shaped medium is deformed by the degree of the concentrated load, and becomes a cross-sectional state as shown in FIG. FIG. 19 shows the relationship between the concentrated load resistance and the size of the semiconductor chip having a thickness of 50 microns in such a state experimentally obtained. In the real life space, the degree that a person presses with a ballpoint pen is 700 g, and if the criteria is that it can withstand 1 kg with respect to the concentrated load, it can be seen from FIG. The inventor has found that a strong region and a region of 0.5 mm or more can be separated as a region weak against a concentrated load. Based on this fact, the semiconductor chip has a planar dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and transmits multiple bits of information. It is a technical restriction that a semiconductor device is characterized in that the semiconductor chip is manufactured with a thickness of 50 μm or less. It is a necessary requirement and is considered to constitute a part of the present invention.

FIGS. 20A and 20B show another embodiment of the present invention. A semiconductor chip 202 having an antenna 203 is provided in a braille projection 201 on a film medium 204. The braille projection is attached to various token device media, etc., but if the semiconductor chip size is 0.5 mm or less, it can be accommodated in the projection. This can contribute to improving the structural strength of the mounting portion of the semiconductor chip. That is, the semiconductor chip has a planar dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and transmits a plurality of bits of information. The reliability can be improved by using various forgery-preventing token device media as a semiconductor device characterized in that the semiconductor chip is present in the Braille projection.

FIG. 21 shows another embodiment of the present invention. A first semiconductor chip 211 connected to the first antenna 212 and a second semiconductor chip 213 connected to the second antenna 214 are present on the film medium 217. At this time, there are a first encrypted description area 215 and a second encrypted description area 216 on the surface of the film-like medium. The information sent from the first semiconductor chip is printed in the first encrypted description area with a numerical value or a special pattern, and the information sent from the second semiconductor chip is written in the second encrypted description area with a numerical value or a special pattern. Is printed according to a simple pattern. As a result, even if one of the semiconductor chips is destroyed, the forgery can be identified. In general, it is assumed that a plurality of semiconductor chips have a planar dimension of 0.5 mm or less on a long side and that the semiconductor chips are inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information. Characteristically, the information of each semiconductor chip is printed in an encrypted pattern pattern on the medium, and a reliable method is provided by forming various anti-counterfeiting token device media as semiconductor devices. It is possible to do.

FIG. 22 shows another embodiment of the present invention. A semiconductor chip 223 having a structure in which an antenna 226 is connected to an antenna pad 225 is provided between the first cover film 221 and the second cover film 224, and the semiconductor chip is reinforced by a reinforcing metal 222. Has a structure. The reinforcing metal is a material having a large elastic modulus, so that it can improve the concentrated load. It is desirable that the thickness of the reinforcing metal is large, but there is a limit due to the limitation of the thickness of the film-like medium. Therefore, the thickness of the reinforcing metal is considerably larger than the thickness of the semiconductor chip, and it is possible to obtain an improvement effect. It is desirable that the bonding between the reinforcing metal and the semiconductor chip be strong. This is necessary to reduce the tensile stress of a thin semiconductor chip. According to the present invention, it is assumed that the semiconductor chip has a planar dimension of 0.5 mm or less on a long side and that the semiconductor chip is inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information. The present invention provides a highly reliable method using various forgery-preventing token device media as a semiconductor device, characterized in that a metal thicker than the semiconductor chip is bonded to the semiconductor chip. Becomes possible.

FIG. 23 shows another embodiment of the present invention. A large number of Japanese paper fibers 231 are formed on a making frame 234 on a making net 235 of Japanese paper. The semiconductor chip 232 with the antenna 233 is formed together with the washi fiber. If the semiconductor chip is made 0.5 mm or less, it can be treated as a fibrous part and inserted into Japanese paper. In this figure, one semiconductor chip is shown as a representative, but it is within the scope of the present invention to mix a plurality of semiconductor chips. That is, the semiconductor chip has a planar dimension of 0.5 mm or less on a long side, and the semiconductor chip is inserted into a medium of Japanese paper with an antenna and transmits a plurality of bits of information, Semiconductor chips are treated as a part of Washi fiber when Washi is made and are mounted inside or on the surface of Washi paper. Can be provided.

(A) through (g) of FIG. 24 show another embodiment of the present invention. FIG. 24A is a cross-sectional view of the silicon-on-insulator wafer having the oxide film layer 242 between the device layer silicon 241 and the silicon wafer 243 immediately after the step of completing device fabrication. FIG. 24B shows a cross-sectional view immediately after the step of continuously attaching the first support sheet 244 to the main surface side of the wafer. FIG. 24C is a cross-sectional view showing a state immediately after the step of removing the substrate silicon with a chemical solution for etching only silicon, such as potassium hydroxide. The oxide film layer 242 serves as an etching stopper for the chemical solution, and is effective in obtaining an extremely thin semiconductor having a thickness of, for example, 0.1 to 50 microns. FIG. 24D shows a cross-sectional view immediately after the step of continuously attaching the reinforcing metal 245 to which the second support sheet 246 is attached. FIG. 24E shows a cross-sectional view immediately after the step of continuously removing the first support sheet. FIG. 24F shows a cross-sectional view immediately after the process of applying, exposing, and developing a photoresist 247. The mask pattern is a linear pattern for separating the semiconductor chips. FIG. 24 (g) shows a cross-sectional view immediately after the separation metal is formed by etching the reinforcing metal, the oxide film layer, and the device layer silicon by the etching technique. These steps make it possible to efficiently, reliably, and stably produce a small semiconductor chip with a thin reinforcing metal.

FIG. 25 shows another embodiment of the present invention. Integer multiple fold lines 251 exist along the long and short sides of the plan view of the film-like medium in the figure. When the semiconductor chip 252 with the antenna 253 is placed therein, the semiconductor chip has a long side of 0.5 mm or less, and the semiconductor chip is inserted into a paper or film-like medium with the antenna. It is characterized by transmitting a plurality of bits of information, and each semiconductor chip is not arranged at a folding position of an integral multiple of the medium. The semiconductor device is a token device. The semiconductor device has no semiconductor chip even if it is bent at the position, and the probability of breakage due to bending is reduced to provide a highly reliable structure.

Another embodiment of the present invention will be described with reference to FIGS. 26A and 26B. In this embodiment, the present invention is applied to a proximity type non-contact IC card conforming to ISO / IEC14443. FIG. 26A shows a memory and communication control function on a card-shaped wiring board 9003 on which an antenna coil 9002 is formed. FIG. 26B is a view showing a state in which one built-in IC semiconductor chip 9001 is mounted as viewed from the side where no device of the IC semiconductor chip is formed, and FIG. 26B is a view of the semiconductor chip portion along the line AB in FIG. 26A of the completed card. It is sectional drawing.

In this embodiment, the IC semiconductor chip 9001 is mounted on the wiring board 9003 on which the coil 9002 is formed in the face-down direction in which the electrode bump 9004 faces the coil. The wiring substrate 9003 is made of PET (polyethylene terephthalate), and the coil 9002 is formed by screen printing of a conductive paste. An anisotropic conductive adhesive 9005 was used for connection between the electrode bump 9004 and the coil 9002. The anisotropic conductive adhesive is obtained by dispersing conductive fine particles in an adhesive layer, and the opposing portions of the electrode bump 9004 and the coil 9002 are electrically connected via the conductive fine particles sandwiched between the two. Although connected, the conductive fine particles are dispersed, so that an electrical short circuit does not occur between electrode bumps and coil wirings that are not opposed to each other. Here, the size of the IC semiconductor chip 9001 is 0.3 mm, the thickness is about 30 μm, and the back surface of the Si wafer on which the devices are formed is polished by a combination of mechanical polishing and chemical polishing to reduce the thickness. Then, dicing was performed to obtain a thin IC semiconductor chip. A card surface layer 9006 made of PET is provided on the side of the IC semiconductor chip 9001 where no device is formed, and the card is formed in a laminated structure in which the IC semiconductor chip 9001 and the resin layer 9007 are sandwiched between two PET layers. Formed.

In this embodiment, since the semiconductor chip area is small, the thickness is small, and it is connected to the printing coil by an anisotropic conductive adhesive, it is strong against bending and point pressure and can be made thin. Thus, a low-cost non-contact IC card can be obtained.

FIGS. 27A and 27B are diagrams showing another embodiment of the semiconductor device according to the present invention. FIG. 27A is a plan view, and FIG. 27B is a sectional view of a semiconductor chip portion. In this embodiment, one Au bump 9013 formed by vapor deposition is provided on each of the IC semiconductor chip 9011 on which the device is formed and the back surface thereof, and the bump 9013 is connected to a strip antenna 9012 made of Sn-plated Cu. Have been. The end of the IC semiconductor chip 9011 does not protrude from both sides of the antenna, and the main surface is connected to the main surface of the antenna 9012 so as to be inclined. The periphery of the IC semiconductor chip 9011 is filled with a resin 9014, and the whole of the IC semiconductor chip 9011 has a flat strip shape in which the IC semiconductor chip is embedded between a pair of antennas.

ＩＣ The size of the IC semiconductor chip 9011 used in this embodiment is 0.25 mm, the thickness is about 50 μm including the Au bump, and the thickness of the antenna 9012 is 0.15 mm. The angle between the main surface of the IC semiconductor chip 9011 and the antenna 9012 is about 30 degrees so that the IC semiconductor chip does not protrude from the antenna surface, and the width of the antenna 9012 is larger than the width of the IC semiconductor chip 9011. .

In this embodiment, since the entire IC semiconductor chip is embedded in the thickness of the dipole antenna, an extremely flat semiconductor device can be obtained. It is possible to do. Note that the semiconductor device according to the present embodiment may be used alone, but the strip-shaped semiconductor device shown in FIG. 27 may be embedded in another base material, for example, to have a normal credit card size or the like. Is also possible.

FIGS. 28A to 28E are diagrams showing another embodiment of the semiconductor device according to the present invention and a method of manufacturing the same. In this embodiment, as shown in the plan view of FIG. 28A and the cross-sectional view of FIG. 28B, two bumps 9023 are formed on the surface of the IC semiconductor chip 9021 on which the device is formed, and the antenna 9022 They are connected by an anisotropic conductive adhesive 9024. The width of the rectangular antenna 9022 made of Cu is smaller than the width of the IC semiconductor chip 9021.

In the manufacture of the semiconductor device according to the present embodiment, the antenna member was processed into a lead frame structure connected to the antenna frame 9025 in a state where many antennas 9022 were arranged as shown in FIG. 28C. Here, the pitch between adjacent antennas is equal to the pitch of the IC semiconductor chips 9021 formed on the Si wafer, and the interval between the opposing antennas is equal to the interval between a pair of antennas to be connected to the IC semiconductor chip. FIG. 28D shows a state where the lead frame-shaped antenna member and the LSI wafer 9026 are overlapped to connect the antenna 9022 and the IC semiconductor chip 9021. The LSI wafer 9026 is separated into respective IC semiconductor chips by dicing while being bonded to a support sheet stretched on a predetermined sheet frame 9028. In this state, the antenna members are aligned on a predetermined row of IC semiconductor chips on the support sheet such that the tips of the antennas are arranged on the bumps of the IC semiconductor chips. FIG. 28E is a diagram showing a cross-sectional structure taken along line AB in FIG. 28D in a state where the antenna 9022 and the IC semiconductor chip 9021 are connected. Of the IC semiconductor chips 9021 bonded on the support sheet 9027, the tip of the antenna 9022 supported by the antenna frame 9025 is aligned with the leftmost IC semiconductor chip in the drawing, and the IC semiconductor chip is heated and pressed by the heating / pressing device 9029. The bump 9023 on the chip and the antenna 9022 are connected with an anisotropic conductive adhesive 9024. When heating and pressurization are performed for a predetermined time and then pressurization is completed, the IC semiconductor chip 9021 and the support sheet 9027 are separated by heat, and the IC semiconductor chip is separated from the support sheet and connected to the antenna. Here, the heating / pressing device 9029 has a structure that is long in a direction perpendicular to the paper surface of the drawing, and in the connection process described above, all the effective semiconductor chips in a row on the support sheet are simultaneously connected to the antenna, Thereafter, the antenna 9022 is cut from the antenna frame 9025 along the lines CD and CD in the figure, whereby an IC semiconductor chip to which the dipole antenna is connected is completed. Note that the semiconductor chip on the left side of the semiconductor chip connected in FIG. 28E has already been connected to the antenna and has been separated, and subsequent to this process, the second IC semiconductor chip from the left in the figure and a plurality of The antenna connection of the IC semiconductor chip is performed.

As described above, in this embodiment, since the width of the antenna 9022 is smaller than the width of the IC semiconductor chip 9021, a plurality of IC semiconductor chips in a row formed on a Si wafer are connected to the antenna at the same time. This is advantageous in that the throughput of the manufacturing process is large and the cost is low. The structure shown in FIGS. 28A and 28B of this embodiment can be further used by being embedded in a resin or other base material.

FIGS. 29A to 29D are diagrams showing another embodiment of the semiconductor device according to the present invention and a method of manufacturing the same. In this embodiment, as shown in FIG. 29A, bumps 9033 are formed on the surface of the IC semiconductor chip 9031 on which the device is formed and the back surface on which the device is not formed, respectively. Connected. The thin wire antenna 9032 made of Cu-coated iron is thick at the connection with the IC semiconductor chip 9021, but its cross-sectional area is smaller than the area of the IC semiconductor chip 9021.

In the manufacture of the semiconductor device according to the present embodiment, the antenna member is inserted into a hole provided in the antenna support 9038 with a large number of antennas 9032 arranged two-dimensionally as shown in FIG. 29C. Here, the arrangement of the antenna is equal to the arrangement of the IC semiconductor chips 9031 formed on the Si wafer. FIG. 29B shows an LSI wafer 9035 on which IC semiconductor chips 9021 are formed. The LSI wafer 9035 is bonded to a support sheet 9036 stretched on a predetermined sheet frame 9037, and each IC semiconductor chip 9035 is diced. Are separated. FIG. 29D is a sectional view showing a state where the LSI wafer of FIG. 29B and the antenna of FIG. 29C are arranged so as to face each other. Although the antenna 9032 penetrates a hole provided in the antenna support 9038, the thick portion connected to the IC semiconductor chip has a larger diameter than the hole, so that the antenna does not fall off the support. In this state, each antenna member is positioned so as to face the IC semiconductor chip 9031 bonded to the support sheet 9036. Next, the bumps 9033 on the IC semiconductor chip and the antenna 9032 are connected by solder 9034 by a heating / pressing device (not shown). When heating and pressurization are performed for a predetermined time and pressurization is completed, the IC semiconductor chip 9031 and the support sheet 9036 are separated by heat, and the IC semiconductor chip is separated from the support sheet and connected to the antenna. In the connection process described above, one surface of all the effective semiconductor chips on the support sheet is simultaneously connected to the antenna. Thereafter, the antennas similarly arranged in a two-dimensional manner are simultaneously connected to the other surface of the IC semiconductor chip. In this step, it is necessary to position the antenna in a direction opposite to that of FIG. 29D, and thus the magnet is prevented from falling off by using a magnet parallel to the support.

As described above, in this embodiment, since the cross-sectional area of the antenna 9032 is smaller than the area of the IC semiconductor chip 9031, a plurality of planar IC semiconductor chips formed on a Si wafer are simultaneously connected to the antenna. It is possible to obtain the advantage that the throughput of the manufacturing process is large and the cost is low. The structure shown in FIG. 29A of this embodiment can be further used by being embedded in a resin or other base material.

な ら If countermeasures are taken against counterfeiting of various token device media, etc., it is considered that there is a technical added value in whether the counterfeiting method is easy. In the conventional example, it is described that a metal pattern is encapsulated in various token device media, but this method not only makes the pattern creation method easy, but has a danger close to recommending a forgery method. I have. Since anti-counterfeiting technology increases the reliability at the same time as the mission to improve security, there is a possibility that it will be completely no guard against advanced counterfeiting, and easy anti-counterfeiting technology increases counterfeiting conversely It is necessary to think deeply about the effect of causing this. In this case, although it is at the technical level of metal pattern creation, it is obvious that if the detection technology is the presence / absence of metal, an advanced technology is not required if opened and closely investigated. That is, since the presence or absence of a metal pattern is a necessary condition, it is sufficiently possible to select a means for realizing it at a normal technical level. The present invention solves the above-mentioned problem by using a semiconductor chip to prevent forgery of various token device media and the like, using an encryption technology together, using a random number generation method, and showing a means for economically realizing a practical structure. Effect can be found.

考 え る For paper, it is necessary to further study the mechanical strength and the strength of the semiconductor chip. Considering the structure of the conventional example having a thickness of 100 μm or less, the way of solving the problem is completely different depending on whether there is no mechanical stress. In other words, mounting a semiconductor chip on a thin paper-like medium requires clarification of different constraints, which is worth consciously clarifying through deep consideration. Is missing. It is necessary to consider the thickness and size of the semiconductor chip. For example, whether a 1-mm semiconductor chip can withstand a normal use level with a paper having a thickness of 100 microns needs to be determined not from the fact that it can be formed structurally but from the viewpoint of using. According to the present invention, the effect of solving these problems can be obtained.

A semiconductor chip diced by a diamond blade is used around the semiconductor chip, so when external stress is applied to the semiconductor chip, cracks such as cracks occur when the stress concentrates around the semiconductor chip, and a part of the semiconductor chip or All functions are lost. When a semiconductor chip is encapsulated in a thin medium such as paper, bending or concentrated load stress is easily applied, so even if there is slight chipping or chipping around the semiconductor chip, there is a problem that the semiconductor chip is broken. . A deep consideration from this perspective is not a conventional structure. According to the present invention, the effect of solving these problems can be obtained.
The provision of the gold bump and the side effect of the anisotropic conductive adhesive or the conductive adhesive around the semiconductor chip, that is, no consideration is given to an increase due to the presence of the gold bump having a vertical structure dimension or a short circuit around the semiconductor chip. For this reason, there is a problem that it is difficult to obtain a structure resistant to bending due to the configuration of the semiconductor chip including the thin gold bumps. According to the present invention, the effect of solving these problems can be obtained.

FIG. 1 is a view showing an embodiment of the present invention. FIG. 2 (FIG. 2) is a drawing showing an embodiment of the present invention. FIG. 3 is a view showing an embodiment of the present invention. FIG. 4 shows a conventional embodiment. FIG. 5 is a view showing an embodiment of the present invention. FIG. 6 is a view showing an embodiment of the present invention. FIG. 7 shows a conventional embodiment. FIG. 8 shows an embodiment of the present invention. FIG. 9A (FIG. 9A) is a plan view showing an embodiment of the present invention. FIG. 9B (FIG. 9B) is a sectional view showing an embodiment of the present invention. FIG. 10 shows an embodiment of the present invention. FIG. 11A is a diagram showing a waveform of an electromagnetic wave in the embodiment of the present invention. FIG. 11B is a diagram showing a circuit block according to an embodiment of the present invention. FIG. 12 is a view showing an embodiment of the present invention. FIG. 13 is a view showing an embodiment of the present invention. FIG. 14 (FIG. 14) is a drawing showing an example of the state of the film roll of the present invention. FIG. 15A (FIG. 15A) is a view showing a state in which semiconductor chips are dispersed in a film medium. FIG. 15B (FIG. 15B) is a view showing a state where the semiconductor chip has an antenna mounted thereon. FIG. 16 shows an embodiment of the present invention. FIG. 17 is a view showing an embodiment of the present invention. FIG. 18 is a view showing an embodiment of the present invention. FIG. 19 is a drawing showing an example of the basis of the present invention. FIG. 20A (FIG. 20A) is a plan view showing an embodiment of the present invention. FIG. 20B (FIG. 20B) is a cross-sectional view corresponding to FIG. 20A. FIG. 21 is a view showing an embodiment of the present invention. FIG. 22 is a sectional view showing an embodiment of the present invention. FIG. 23 is a plan view showing an embodiment of the present invention. FIG. 24 is a view showing an embodiment of the present invention. FIG. 25 is a plan view showing an embodiment of the present invention. FIG. 26A is a plan view showing an embodiment of the present invention. FIG. 26B is a cross-sectional view of the embodiment of FIG. 26A. FIG. 27A (FIG. 27A) is a plan view showing an embodiment of the present invention. FIG. 27B is a partial cross-sectional view of the semiconductor chip. FIG. 28A is a plan view of the embodiment of the present invention. FIG. 28B is a cross-sectional view of the embodiment of FIG. 28A. FIG. 28C (FIG. 28C) is a plan view showing the antenna frame. FIG. 28D (FIG. 28D) is a view of the state where the antenna member and the LSI wafer are overlaid, as viewed from above. FIG. 28E (FIG. 28E) is a cross-sectional view showing a state where the antenna and the semiconductor chip are connected. FIG. 29A (FIG. 29A) is a sectional view for explaining an embodiment of the present invention. FIG. 29B is a plan view showing the LSI wafer. FIG. 29C (FIG. 29C) is a plan view showing an arrangement state of the antenna. FIG. 29D is a cross-sectional view showing a state where the LSI wafer and the antenna are opposed to each other.

Explanation of reference numerals

DESCRIPTION OF SYMBOLS 11 ... Semiconductor chip side wall oxide film, 12 ... Device layer silicon, 13 ... Pad, 14 ... Backside oxide film, 15 ... Semiconductor chip side wall oxide film, 16 ... Adhesive resin, 17 ... Antenna wiring, 18 ... Substrate, 19 ... Conductive particle 19a: conductive particles, 21: pad, 22: device layer silicon, 23: oxide film layer, 24: silicon substrate, 25: support tape, 26: photoresist, 27: etching groove, 28: expanded support tape, 29 ... Gap, 30 ... Adhesive layer, 31 ... Pad, 32 ... Memory mat, 33 ... Readout circuit, 34 ... Selector circuit, 35 ... Semiconductor chip side wall oxide film, 36 ... Transceiver circuit, 37 ... Through hole, 38 ... Power circuit, 39 small pad for random number generation, 39a random number generation circuit, 41 chipping, 42 crack, 43 pad, 44 semiconductor chip , 45 ... adhesive resin, 46 ... conductive particles, 47 ... antenna wiring, 48 ... conductive particles, 49 ... substrate, 51 ... semiconductor chip, 52 ... antenna, 53 ... film-like medium, 55 ... capacitance antenna electrode 1, 56: an antenna electrode 2 for forming a capacitor, 57: an antenna electrode 358 for forming a capacitor, an antenna electrode 4, 61 for forming a capacitor, an adhesive resin, 62: a back oxide film, 63: a device silicon layer, 64: a sidewall oxide film 65, conductive particles, 66, surface oxide film, 67, conductive particles, 68, tungsten pad, 69, antenna wiring, 71, adhesive resin, 72, device silicon layer, 73, aluminum pad, 74, surface oxide film, 75 ... conductive particles, 76 ... gold pad, 77 ... conductive particles, 78 ... antenna wiring, 79 ... insulator, 81 ... medium surface printing pattern, 82 ... semiconductor chip 83: film-shaped medium, 91: semiconductor chip, 92: conductive particles, 93: small pad, 94: adhesive resin, 95: antenna wiring, 96: substrate, 97: writable memory area, 111: nth clock, 112 .. N-th data, 113 ... n + 1-th clock, 114 ... n + 1-th data, 115 ... antenna, 116 ... rectifier, 117 ... ROM, 118 ... semiconductor chip, 119 ... counter, 119a ... selector, 121 ... first Semiconductor chip, 122: antenna, 123: second semiconductor chip, 124: film medium, 131: semiconductor chip, 132: encrypted physical information entry field, 133: film medium, 141: first cover film roll, 142: semiconductor chip; 143: second cover film; 144: second cover film roll; 5: first cover film, 146: take-up roll, 151: semiconductor chip, 152: film medium, 154: antenna, 161: first antenna pad, 162: second antenna pad, 163: antenna Coil, 164 first through hole, 165 second through hole, 171 tapered corner, 181 concentrated load tool, 182 film medium, 183 semiconductor chip, 184 silicon rubber, 185 steel plate, Reference numeral 201: Braille projection, 202: semiconductor chip, 203: antenna, 204: film medium, 211: first semiconductor chip, 212: first antenna, 213: second semiconductor chip, 214: second antenna 215: first encrypted description area 216: second encrypted description area 217: film-like medium, 221: first Cover film, 222: reinforcing metal, 223: semiconductor chip, 224: second cover film, 225: antenna pad, 226: antenna, 231: Japanese paper fiber, 232: semiconductor chip, 233: antenna, 234: embedded Frame for use, 235: woven net, 241: device layer silicon, 242: oxide film layer, 243: substrate silicon wafer, 244: first support sheet, 245: reinforcing metal, 246: second support sheet, 247 ... Photoresist, 248 etching groove, 251 integer fold line, 252 semiconductor chip, 253 antenna, 9001 IC semiconductor chip, 9002 coil, 9003 wiring board, 9004 electrode bump, 9005 anisotropic conductivity Adhesive, 9006: surface layer, 9007: resin layer, 9011: IC semiconductor chip, 012 ... antenna, 9013 ... bump, 9014 ... resin, 9021 ... IC semiconductor chip, 9022 ... antenna, 9023 ... bump, 9024 ... anisotropic conductive adhesive, 9025 ... antenna frame, 9026 ... wafer, 9027 ... support sheet, 9028 ... Sheet frame, 9029 ... Heating / pressing device, 9031 ... IC semiconductor chip, 9032 ... Antenna, 9033 ... Bump, 9034 ... Solder, 9035 ... Wafer, 9036 ... Support sheet, 9037 ... Seat frame, 9038 ... Antenna support.

Claims (13)

A semiconductor chip having a memory having a planar dimension of 0.5 mm or less on a long side and storing a plurality of bits of information;
An antenna connected to the semiconductor chip and transmitting the information,
The semiconductor chip is mounted on a film-like medium,
The semiconductor device, wherein the information of the plurality of bits is described in the medium. A semiconductor chip having a memory whose plane dimension is 0.5 mm or less on a long side and stores information of an identification number;
An antenna connected to the semiconductor chip and transmitting the identification number;
The semiconductor chip is mounted on a film-like medium,
The semiconductor device, wherein the identification number is written on the medium. (3) The semiconductor device according to (1) or (2), wherein the information is encrypted and written on the medium. 4. The semiconductor device according to claim 1, wherein the information is encrypted and described as a numerical value or a pattern on the medium. (5) The semiconductor device according to any one of (1) to (4), wherein the information is described in a special ink. 6. The semiconductor device according to claim 1, wherein the memory is a pattern on the semiconductor chip formed by electron beam drawing. (7) The semiconductor device according to any one of (1) to (6), wherein physical information of the semiconductor chip is described in the medium. A semiconductor chip having a memory whose plane dimension is 0.5 mm or less on a long side and stores an identification number;
An antenna connected to the semiconductor chip and transmitting the identification number;
The semiconductor chip is mounted on a film-like medium,
A semiconductor device, wherein physical information of the semiconductor chip is described on the medium. 9. The semiconductor device according to claim 8, wherein the physical information is encrypted and described on the medium. 10. The semiconductor device according to claim 7, wherein the physical information is at least one of a size, a thickness, a position, and a degree of the semiconductor chip. 11. The semiconductor device according to claim 1, wherein the antenna is formed on the semiconductor chip. 12. The semiconductor device according to claim 1, wherein the medium is an IC card. The medium is paper;
The semiconductor device according to claim 1, wherein the semiconductor chip is embedded together with paper fibers.

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