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JP2004071772A - High frequency package - Google Patents

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Publication number
JP2004071772A
JP2004071772A JP2002227824A JP2002227824A JP2004071772A JP 2004071772 A JP2004071772 A JP 2004071772A JP 2002227824 A JP2002227824 A JP 2002227824A JP 2002227824 A JP2002227824 A JP 2002227824A JP 2004071772 A JP2004071772 A JP 2004071772A
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JP
Japan
Prior art keywords
conductor
frequency
dielectric
frequency package
lid
Prior art date
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JP2002227824A
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Japanese (ja)
Inventor
Toshifumi Morita
敏文 森田
Shigetoshi Segawa
茂俊 瀬川
Hiroaki Yamamoto
博章 山本
Hiroshi Iwachido
博 岩知道
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MIKKU KK
Panasonic Holdings Corp
PTM Corp
Original Assignee
MIKKU KK
Matsushita Electric Industrial Co Ltd
PTM Corp
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Priority to JP2002227824A priority Critical patent/JP2004071772A/en
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Abstract

【課題】高周波特性を改善し、外部の高周波ノイズから保護し、外部への漏洩電力削減し、高出力素子の放熱を可能とした高周波パッケージを提供する。
【解決手段】誘電体材料からなる誘電体多層基板(251,296,301,306)と、蓋体(281)と、前記誘電体基板と前記蓋体により形成され高周波素子(381)を収納するためのキャビティ(271)と、前記誘電体基板内に設けられた接地導体(211,321)と、前記接地導体に導通し、前記誘電体基板を貫通するスル−ホール内に充填されたビア導体(221,231)とを具備した高周波パッケージとする。これにより、漏洩電力及び高周波ノイズの発生を防止でき、実装補助ガードエリヤが不要となり、パッケージの周辺にシールド板が不要となり、実装エリアが広がる。
【選択図】 図2
Provided is a high-frequency package that improves high-frequency characteristics, protects against external high-frequency noise, reduces leakage power to the outside, and enables heat radiation of a high-output element.
A dielectric multilayer substrate (251, 296, 301, 306) made of a dielectric material, a lid (281), and a high frequency element (381) formed by the dielectric substrate and the lid are housed. (271), a ground conductor (211 and 321) provided in the dielectric substrate, and a via conductor filled in a through-hole that is electrically connected to the ground conductor and penetrates the dielectric substrate. (221, 231). As a result, the generation of leakage power and high-frequency noise can be prevented, the need for an auxiliary mounting guard area is eliminated, and the need for a shield plate around the package is eliminated, thus increasing the mounting area.
[Selection] Fig. 2

Description

【0001】
【発明が属する技術分野】
本発明は、高周波領域におけるMMIC(monolithic microwave or millimeter wave integrated circuit)用表面実装型高周波パッケージに関するものであり、特に小型化で、自動実装が可能で、MMICの高出力素子にも対応が可能な、低温焼成セラミック(LTCC)を用いた高周波パッケージに関する。
【0002】
【従来の技術】
従来、この種の高周波パッケージとしては、例えばフランス国ユナイテド モノリシック セミコンダクター(United Monolithic Semiconductor)社製の製品名:CHA5093TCFが提案されている。図11は、前記従来の高周波パッケージを外部回路基板に実装した時の断面図を示すものである。図11において、2001は外部回路基板の絶縁層、2061は誘電体材料からなる高周波パッケージの誘電体基板、2011は高周波パッケージの蓋体、2031は高周波素子、2051は高周波信号入出力用高周波パッケージの端子導体、2151は前記高周波素子をダイボンディングするためのダイボンド導体、2041は前記高周波素子と前記高周波信号入出力用の端子導体をワイヤボンディングするためのワイヤ、2131は高周波信号入出力用の前記外部回路基板の端子導体、2081は前記外部回路基板の接地導体、2111は前記外部回路基板の接地導体、2161は前記外部回路基板の端子導体に高周波パッケージを導通させる高周波パッケージの実装端子導体、2121,2091は外部回路基板と高周波パッケージを導通させるための半田、2141,2101は前記高周波パッケージの誘電体基板を貫通するスル−ホール内に充填されたビア導体である。
【0003】
【解決しようとする課題】
しかしながら、前記従来の構成では、電磁波がシールドされてなく、外部の高周波ノイズがパッケージ内に到達したり、パッケージ内の信号が漏洩したり、機密性が悪かったり、高出力素子の放熱が十分出来ないという課題がある。また、半田2121,2091で実装しているので、高周波パッケ−ジと外部回路基板の間隔が狭く、寄生素子が付いたり、間隔がばらついたりして、高周波特性が悪いという課題を有していた。
【0004】
本発明は、前記従来の課題を解決するもので、高周波特性を改善し、外部の高周波ノイズから保護し、外部への漏洩電力削減し、高出力素子の放熱を可能とした高周波パッケージを提供することを目的とする。
【0005】
【課題を解決するための手段】
前記目的を達成するため、本発明の高周波パッケージは、誘電体材料からなる誘電体多層基板と、蓋体と、前記誘電体基板と前記蓋体により形成され高周波素子を収納するためのキャビティと、前記誘電体基板内に設けられた接地導体と、前記接地導体に導通し、前記誘電体基板を貫通するスル−ホール内に充填されたビア導体とを具備したことを特徴とする。
【0006】
次に本発明の別の高周波パッケージは、誘電体材料からなる誘電体多層基板と、シールド導体層を有する蓋体と、前記誘電体基板と前記蓋体により形成され高周波素子を収納するためのキャビティと、前記誘電体基板内に設けられた接地導体と、前記接地導体に導通し、前記誘電体基板を貫通するスル−ホール内に充填されたビア導体とを具備し、前記蓋体のシールド導体層と前記ビア導体を導通させたことを特徴とする。
【0007】
本発明のさらに別の高周波パッケージは、誘電体材料からなる誘電体多層基板と、シールド導体を有する蓋体と、前記誘電体基板と前記蓋体により形成され高周波素子を収納するためのキャビティを具備したことを特徴とする。
【0008】
【発明の実施の形態】
前記本発明においては、キャビティ内の前記高周波素子を前記誘電体多層基板に実装するダイボンディング領域に、前記誘電体多層基板を貫通するスル−ホール内に充填されたビア導体と、ダイボンド導体を配置し、前記接地導体に導通させたことが好ましい。
【0009】
前記ダイボンディング領域と、その周辺領域に前記誘電体基板を貫通するスル−ホール内に充填されたビア導体とダイボンド導体を配置し、前記ダイボンド導体と、高周波信号を入出力する端子導体でマイクロ波伝送線路を形成したことが好ましい。
【0010】
また、前記ダイボンディング領域に配置したビア導体と導体層を多層構造にしたことが好ましい。
【0011】
また、前記誘電体多層基板に設けられた外部回路基板に実装するための実装面に、絶縁材料からなる半田隔離用の半田ダムを前記実装面上の信号用端子導体と接地導体間に形成したことが好ましい。
【0012】
また、前記誘電体多層基板に設けられた外部回路基板に実装するための実装導体と、前記外部回路基板の導体層との間に半田外装メッキした樹脂ボールを配置したことが好ましい。
【0013】
以下、発明の実施の形態について図面を用いて説明する。
【0014】
(実施の形態1)
図1は、本発明の実施の形態1における高周波パッケージの蓋体を外したときの上から見た高周波パッケージを示す平面図である。図1において、101は高周波パッケージ本体の最上の導体層である第1導体層で形成されたビアランド導体、131は誘電体材料からなる高周波パッケージの誘電体多層基板最上絶縁層である第1絶縁層、171はMMICなどの高周波素子である。141は第2導体層で形成された高周波信号用端子導体、161は第3導体層で形成された前記高周波素子をダイボンディングするダイボンド導体、151は第2絶縁層、121は第2導体層で形成された信号用端子導体を示す。
【0015】
図2は、本発明の実施の形態1における高周波パッケージを外部回路基板に実装したときの、図1におけるI−I線の高周波パッケージの断面図である。図2において、321は第4導体層で形成された接地導体、371は蓋体のシールド導体、291は導電性の接着剤、251は高周波パッケージ本体の第1絶縁層、296は高周波パッケージ本体の第2絶縁層、301は第3絶縁層、306は第4絶縁層、281は前記251と同じ材質で形成された蓋体の絶縁層、391は高周波パッケージ本体の第2導体層で形成された高周波信号用端子導体である。361は第3導体で層形成されたダイボンド導体であり、前記キャビティ内の前記高周波素子を前記誘電体多層基板に実装するダイボンディング領域と、その周辺領域に前記誘電体基板を貫通するスル−ホール内に充填されたビア導体とダイボンド導体を配置し、前記ダイボンド導体と、高周波信号を入出力する前記端子導体391でマイクロ波伝送線路を形成している。また、ダイボンド導体361は、ビヤ導体231,221を介し、接地導体321,211と導通している。211は、前記外部回路基板に高周波パッケージを実装するための実装面上の実装導体である第5導体層で層形成され接地導体である。331は前記第2絶縁層を貫通するスル−ホール内に充填されたビア導体、231,332は前記第3絶縁層を貫通するスル−ホール内に充填されたビア導体、221,333は前記第4絶縁層を貫通するスル−ホール内に充填されたビア導体である。201は外部回路基板の絶縁層、351は外部回路基板の導体層で形成された高周波信号用端子導体、341は外部回路基板の導体層で形成された接地導体層、311は絶縁材料からなる半田隔離用の半田ダムであり、信号用端子導体と接地導体間のみに塗布している。381は高周波素子、271は前記誘電体基板と前記蓋体により形成され高周波素子を収納するためのキャビティである。261は前記高周波素子381と前記高周波信用端子導体391をワイヤボンディングするためのワイヤ、241は高周波パッケージを前記回路基板導体に電気的導通させ実装するための半田メッキ外装の樹脂ボールである。高周波信号用端子導体391と307は電気的に導通している。
【0016】
このように構成すると、キャビティ271内の高周波素子381を本発明の高周波パッケージに実装するに際し、ダイボンディング領域161のみに、第3、4絶縁層301,306を貫通するスル−ホール内に充填されたビア導体221,231とダイボンド導体361を配置できる。その結果、接地導体211に導通させ、高周波素子381が高出力素子で発熱しても、ビア導体221,231とダイボンド導体361を介し、外部回路基板の接地導体341に伝わり、放熱するので、高周波素子381が高温になることはない。したがって、性能劣化または破壊を防ぐことができる。
【0017】
また、ダイボンディング領域161と、その周辺領域に第3、4絶縁層301,306を貫通するスル−ホール内に充填されたビア導体342,343とダイボンド導体361を配置し、高周波信号用端子導体391を信号導体と、ダイボンド導体361を接地導体としたマイクロ波伝送線路を形成したので、高周波素子381から減衰なく信号を取り出せる。また、減衰なく信号を入力することができる。
【0018】
特に、低温焼成セラミック(LTCC)おいては、ビア導体の材質は、導体層の材質より気密性が悪く、放熱用にビア導体を多数配置すると、パッケ−ジ内のキャビティ部の気密性が悪くなり、外部から湿気が混入したりキャビティ内の気体が外に漏れだす。本実施形態は、ダイボンディング領域に配置したビア導体221,231と、導体層361,321,211を多層構造にしたことで、この問題を解決できた。
【0019】
図3は、本発明の実施の形態1における高周波パッケージを外部回路基板に実装したときの、図1におけるII−II線の高周波パッケージの断面図である。図3において、401は蓋体、402は蓋体のシールド導体、403は導電性の接着材、404は高周波パッケージ本体の第1導体層で形成されたビアランド導体、405は高周波パッケージ本体の第1絶縁層、406は前記第1絶縁層405を貫通するスル−ホール内に充填されたビア導体、407は第2絶縁層、408は前記第2絶縁層407を貫通するスル−ホール内に充填されたビア導体、409は第2導体、451は外部回路基板の絶縁層、452は外部回路基板の導体層で形成された信号端子導体、453は半田外装メッキした樹脂ボール、454は第3絶縁層、455は第4絶縁層、456は前記第3絶縁層454を貫通するスル−ホール内に充填されたビア導体、457は前記第4絶縁層455を貫通するスル−ホール内に充填されたビア導体、458は第5導体層で形成された信号端子導体ある。蓋体のシールド導体402と、高周波パッケージ本体の第1導体層で形成されたビアランド導体404とは、導電性の接着材403により接着され電気的に導通している。信号端子導体458と452の間に樹脂ボール453を配置し加熱することで、前記信号端子導体458と452を電気的に導通しいる。
【0020】
図4は、本発明の実施の形態1における高周波パッケージを外部回路基板に実装したときの、図1におけるIII−III線の高周波パッケージの断面図である。図4において、501は蓋体のシールド導体、502は前記第2絶縁層511を貫通するスル−ホール内に充填されたビア導体、503は前記第3絶縁層512を貫通するスル−ホール内に充填されたビア導体、504は高周波素子を収納するためのキャビティ、505は高周波素子、506は第2絶縁層、507は第1絶縁層、508は導電性の接着材、509は高周波パッケージ本体の第1導体層で形成されたビアランドであり、接地導体526,527に導通されている。511は高周波パッケージ本体の第2絶縁層、512は高周波パッケージ本体の第2絶縁層、513は高周波パッケージ本体の第3絶縁層、514は高周波パッケージ本体の第4絶縁層、521は前記第4絶縁層514を貫通するスル−ホール内に充填されたビア導体、522は前記第3絶縁層513を貫通するスル−ホール内に充填されたビア導体、523は外部回路基板の導体層で形成された接地導体、524は樹脂ボール、525は外部回路基板の絶縁層、526は高周波パッケージ本体の第5導体層で形成された接地導体、527は高周波パッケージ本体の第4導体層で形成された接地導体、528は高周波パッケージ本体の第3導体層で形成されたダイボンド導体、529は高周波パッケージ本体の第2導体層で形成されたビアランド導体である。
【0021】
高周波素子を収納するためのキャビティの周辺に、前記誘電体基板内に設けられた接地導体と、前記接地導体に導通し、前記誘電体基板を貫通するスル−ホール内に充填されたビア導体502、503と導体層で形成さビアランド509,529を具備し、前記蓋体のシールド導体層501と前記ビア導体509を導電性接着剤508により、導通させている。この構成により、高周波パッケージ内のキャビティに収納された高周波素子の電磁シールドが完璧となり、外部の高周波ノイズがパッケージ内に到達したり、パッケージ内の信号が漏洩したりしなくなる。
【0022】
前記蓋体のシールド導体層501をキャビティ504側に配置したことにより、シールド導体層と反対の蓋体の絶縁層281面に、他の回路、例えばアンテナやフィルタを形成したり、設置することが可能になる。
【0023】
前記誘電体多層基板に設けられた外部回路基板に実装するための実装導体526と、前記外部回路基板の導体523との間に、半田外装メッキした樹脂ボール524を配置し加熱することで、前記導体526と523が導通可能となる。従来の目的は、ギャップを高くし、部品実装を可能としたり、外部回路基板との干渉材として働かせ、信頼性を向上させるのが目的であったが、高周波パッケ−ジ実装に樹脂ボールを用いることにより、高周波パッケ−ジと外部回路基板の間隔が広くなり、寄生素子を小さくできる。また、間隔がばらつかず、しかも高精度となり、高周波特性が改善される。更に、高周波パッケ−ジが大型化すると、効果が大となる。
【0024】
図5は、本発明の実施の形態1における高周波パッケージの第1絶縁層と第1導体層とビア導体を表す平面図である。図5において、601は誘電体材料からなる高周波パッケージの誘電体多層基板最上絶縁層である第1絶縁層、611は高周波パッケージ本体の第1導体層で形成されたビアランド導体、621は前記第1絶縁層601を貫通するスル−ホール内に充填されたビア導体である。
【0025】
図6は、本発明の実施の形態1における高周波パッケージの第2絶縁層と第2導体層とビア導体を表す平面図である。701は第2絶縁層、711は第2導体層で形成されたビアランド導体、721はビア導体、731は第2導体層で形成された高周波信号入出力用端子導体、741は第2導体層で形成された信号入出力用又は電源供給用端子導体である。
【0026】
図7は、本発明の実施の形態1における高周波パッケージの第3絶縁層と第3導体層とビア導体を表す平面図である。図7において、801はビア導体、802は第3導体層で形成されたビアランド導体、803は第3絶縁層、804はビア導体、805は第3導体層で形成されたダイボンド導体であり、接地導体とビア導体804により導通している。
【0027】
図8は、本発明の実施の形態1における高周波パッケージの第4絶縁層と第4導体層とビア導体を表す平面図である。図8において、901はビア導体、902は第4導体層で形成された、ビアランド、903は第4絶縁層、904はビア導体、905は第4導体層で形成された接地導体である。
【0028】
図9は、本発明の実施の形態1における高周波パッケージの第4絶縁層と第5導体層を表す平面図である。1001は第5導体層で形成された信号用端子導体、1002は第5導体層で形成された接地導体、1003は高周波用端子導体、1004は第4絶縁層である。この面は、高周波パッケージを外部回路基板に実装する、実装面である。第5導体層は高周波パッケージを外部回路基板の導体層と導通を取るための実装用導体層である。
【0029】
図10は、本発明の実施の形態1における高周波パッケージを下から見た高周波パッケージ底面図である。図10において、1101は第5導体層で形成された信号用端子導体、1102は第5導体層で形成された接地導体、1103は高周波用端子導体、1104は第4絶縁層、1105は半田外装メッキした樹脂ボール、1106は絶縁材料からなる半田隔離用の半田ダムであり、前記実装面上の信号用端子導体1101、1103と接地導体1102間のみに形成している。信号端子1101と1103間に半田ダムを形成しないことで、半田ダムの材料固有の誘電ロスが生じず、高周波特性を高く維持できる。従来、表面実装での各端子間、パターン間の半田の流れ出しを防止するために、ハンダ隔離用のダムを形成したいたが、高周波パッケージにおいては、半田ダムの配置の仕方によっては性能を満足させることが出来 ない場合がある。本実施形態の半田ダムの配置方法は、高周波特性に全く影響の無い様に配置されている。
【0030】
また、実施の形態1では、前記蓋体のシールド導体層と前記ビア導体を導通させたが、高周波素子を収納するためのキャビティの周辺に、前記誘電体基板内に設けられた接地導体と、前記接地導体に導通し、前記誘電体基板を貫通するスル−ホール内に充填されたビア導体と導体層で形成さビアランドを具備することのみでも、低周波数では高周波素子の電磁シールドが可能である。
【0031】
また、蓋体にシールド導体を有することのみでも、低周波数では、高周波素子の電磁シールドが可能である。
【0032】
【発明の効果】
以上説明したとおり本発明は、高周波特性を改善し、外部の高周波ノイズから保護し、外部への漏洩電力削減し、高出力素子の放熱を可能とした高周波パッケージを提供できる。さらに、漏洩電力及び高周波ノイズの発生を防止でき、実装補助ガードエリヤが不要となり、パッケージの周辺にシールド板が不要となり、実装エリアが広がる。
【図面の簡単な説明】
【図1】本発明の実施の形態1における高周波パッケージの蓋体を着脱時、上から見た高周波パッケージ平面図
【図2】本発明の実施の形態1における高周波パッケージを外部回路基板に実装したときの、図1におけるI−I線の高周波パッケージ断面図
【図3】本発明の実施の形態1における高周波パッケージを外部回路基板に実装したときの、図1におけるII−II線の高周波パッケージ断面図
【図4】本発明の実施の形態1における高周波パッケージを外部回路基板に実装したときの、図1におけるIII−III線の高周波パッケージ断面図
【図5】本発明の実施の形態1における高周波パッケージの、第1絶縁層、第1導体層とビア導体を表す平面図
【図6】本発明の実施の形態1における高周波パッケージの、第2絶縁層、第2導体層とビア導体を表す平面図
【図7】本発明の実施の形態1における高周波パッケージの、第3絶縁層、第3導体層とビア導体を表す平面図
【図8】本発明の実施の形態1における高周波パッケージの、第4絶縁層、第4導体層とビア導体を表す平面図
【図9】本発明の実施の形態1における高周波パッケージの、第4絶縁層と第5導体層を表す平面図
【図10】本発明の実施の形態1における高周波パッケージを、下から見た高周波パッケージ底面図
【図11】従来の高周波パッケージを外部回路基板に実装した時の、高周波パッケージ断面図
【符号の説明】
101 ビアランド導体
121 信号用端子導体
131 誘電体多層基板最上絶縁層の第1絶縁層
141 高周波信号用端子導体
151 第2絶縁層
161 ダイボンド導体
171 高周波素子
201 絶縁層
211 接地導体
221,231,331,332,333 ビア導体
241 半田メッキ外装の樹脂ボール
251 第1絶縁層
261 ワイヤ
271 キャビティ
281 蓋体の絶縁層
291 導電性接着剤
296 第2絶縁層
301 第3絶縁層
306 第4絶縁層
311 半田隔離用半田ダム
321 接地導体
341 接地導体層
351 高周波信号用端子導体
361 ダイボンド導体
371 蓋体のシールド導体
381 高周波素子
391 高周波信号用端子導体
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a surface-mount type high-frequency package for a MMIC (monolithic microwave or millimeter wave integrated circuit) in a high-frequency region. In particular, the present invention relates to a miniaturization, automatic mounting, and a high output element of the MMIC. And a high-frequency package using low-temperature fired ceramics (LTCC).
[0002]
[Prior art]
Conventionally, as this type of high-frequency package, for example, a product name: CHA5093TCF manufactured by United Monolithic Semiconductor (France) has been proposed. FIG. 11 is a cross-sectional view when the conventional high-frequency package is mounted on an external circuit board. 11, reference numeral 2001 denotes an insulating layer of an external circuit board; 2061, a dielectric substrate of a high-frequency package made of a dielectric material; 2011, a lid of a high-frequency package; 2031, a high-frequency element; 2051, a high-frequency signal input / output high-frequency package; A terminal conductor, 2151 is a die bond conductor for die bonding the high frequency element, 2041 is a wire for wire bonding the high frequency element and the terminal conductor for high frequency signal input / output, and 2131 is the external for high frequency signal input / output. A terminal conductor of the circuit board; 2081, a ground conductor of the external circuit board; 2111, a ground conductor of the external circuit board; 2161, a mounting terminal conductor of a high-frequency package for conducting the high-frequency package to the terminal conductor of the external circuit board; 2091 is an external circuit board and high frequency package Solder for through, 2141,2101 will penetrate the dielectric substrate of the high-frequency package - a via conductor which is filled in the hole.
[0003]
[Problem to be solved]
However, in the conventional configuration, the electromagnetic wave is not shielded, and external high-frequency noise reaches the inside of the package, the signal in the package leaks, the confidentiality is poor, and the heat of the high-power element can be sufficiently dissipated. There is a problem that there is no. Also, since the components are mounted with the solders 2121 and 2091, the distance between the high-frequency package and the external circuit board is small, and there is a problem that the parasitic elements are attached or the distance varies, resulting in poor high-frequency characteristics. .
[0004]
The present invention solves the above-mentioned conventional problems, and provides a high-frequency package that improves high-frequency characteristics, protects against external high-frequency noise, reduces leakage power to the outside, and enables heat dissipation of high-output elements. The purpose is to:
[0005]
[Means for Solving the Problems]
To achieve the above object, the high-frequency package of the present invention is a dielectric multilayer substrate made of a dielectric material, a lid, and a cavity formed by the dielectric substrate and the lid to house a high-frequency element, A ground conductor provided in the dielectric substrate, and a via conductor filled in a through-hole that is electrically connected to the ground conductor and penetrates the dielectric substrate is provided.
[0006]
Next, another high-frequency package according to the present invention includes a dielectric multilayer substrate made of a dielectric material, a lid having a shield conductor layer, and a cavity formed by the dielectric substrate and the lid for housing a high-frequency element. And a ground conductor provided in the dielectric substrate; and a via conductor filled in a through-hole that is electrically connected to the ground conductor and penetrates the dielectric substrate. The layer and the via conductor are electrically connected.
[0007]
Still another high-frequency package according to the present invention includes a dielectric multilayer substrate made of a dielectric material, a lid having a shield conductor, and a cavity formed by the dielectric substrate and the lid to house a high-frequency element. It is characterized by having done.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
In the present invention, a via conductor filled in a through-hole penetrating the dielectric multilayer substrate and a die bond conductor are arranged in a die bonding region for mounting the high-frequency element in the cavity on the dielectric multilayer substrate. In addition, it is preferable that the conductive member is electrically connected to the ground conductor.
[0009]
In the die bonding region, a via conductor and a die bond conductor filled in a through hole penetrating the dielectric substrate are arranged in a peripheral region thereof, and the die bond conductor and a terminal conductor for inputting / outputting a high-frequency signal use microwaves. Preferably, a transmission line is formed.
[0010]
It is preferable that the via conductor and the conductor layer arranged in the die bonding region have a multilayer structure.
[0011]
Further, on a mounting surface for mounting on an external circuit board provided on the dielectric multilayer substrate, a solder dam for isolating solder made of an insulating material was formed between the signal terminal conductor and the ground conductor on the mounting surface. Is preferred.
[0012]
In addition, it is preferable that a resin ball plated with solder is disposed between a mounting conductor for mounting on an external circuit board provided on the dielectric multilayer substrate and a conductor layer of the external circuit board.
[0013]
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0014]
(Embodiment 1)
FIG. 1 is a plan view showing a high-frequency package viewed from above when a lid of the high-frequency package according to Embodiment 1 of the present invention is removed. In FIG. 1, reference numeral 101 denotes a via land conductor formed of a first conductor layer, which is the uppermost conductor layer of the high-frequency package body, and 131, a first insulating layer which is the uppermost insulating layer of a dielectric multilayer substrate of a high-frequency package made of a dielectric material. , 171 are high-frequency elements such as MMICs. 141 is a high-frequency signal terminal conductor formed of the second conductor layer, 161 is a die bond conductor for die-bonding the high-frequency element formed of the third conductor layer, 151 is a second insulating layer, and 121 is a second conductor layer. 4 shows a formed signal terminal conductor.
[0015]
FIG. 2 is a cross-sectional view of the high-frequency package taken along line II in FIG. 1 when the high-frequency package according to Embodiment 1 of the present invention is mounted on an external circuit board. 2, 321 is a ground conductor formed of a fourth conductor layer, 371 is a shield conductor of a lid, 291 is a conductive adhesive, 251 is a first insulating layer of the high-frequency package body, and 296 is a first insulating layer of the high-frequency package body. A second insulating layer, 301 is a third insulating layer, 306 is a fourth insulating layer, 281 is a lid insulating layer formed of the same material as that of 251, and 391 is a second conductor layer of the high-frequency package body. This is a high-frequency signal terminal conductor. Reference numeral 361 denotes a die bond conductor formed of a third conductor, and a die bonding region for mounting the high-frequency element in the cavity on the dielectric multilayer substrate, and a through hole penetrating the dielectric substrate in a peripheral region thereof. A via conductor and a die bond conductor filled inside are arranged, and a microwave transmission line is formed by the die bond conductor and the terminal conductor 391 that inputs and outputs a high-frequency signal. The die bond conductor 361 is electrically connected to the ground conductors 321 and 211 via the via conductors 231 and 221. Reference numeral 211 denotes a ground conductor formed as a fifth conductor layer, which is a mounting conductor on a mounting surface for mounting the high-frequency package on the external circuit board. 331 is a via conductor filled in a through-hole penetrating the second insulating layer, 231 and 332 are via conductors filled in a through-hole penetrating the third insulating layer, and 221 and 333 are the via conductors. 4 Via conductors filled in through holes penetrating through the insulating layer. 201 is an insulating layer of the external circuit board, 351 is a high-frequency signal terminal conductor formed of a conductive layer of the external circuit board, 341 is a ground conductor layer formed of the conductive layer of the external circuit board, and 311 is a solder made of an insulating material. It is a solder dam for isolation, and is applied only between the signal terminal conductor and the ground conductor. 381 is a high-frequency element, and 271 is a cavity formed by the dielectric substrate and the lid for housing the high-frequency element. 261 is a wire for wire bonding the high-frequency element 381 and the high-frequency credit terminal conductor 391, and 241 is a resin ball of a solder plating exterior for electrically conducting and mounting the high-frequency package to the circuit board conductor. The high-frequency signal terminal conductors 391 and 307 are electrically conductive.
[0016]
With this configuration, when the high-frequency element 381 in the cavity 271 is mounted on the high-frequency package of the present invention, only the die bonding region 161 is filled in the through-hole penetrating the third and fourth insulating layers 301 and 306. Via conductors 221 and 231 and a die bond conductor 361 can be arranged. As a result, even if the high-frequency element 381 generates heat with the high-power element by conducting to the ground conductor 211, the heat is transmitted to the ground conductor 341 of the external circuit board via the via conductors 221 and 231 and the die bond conductor 361, and heat is released. The element 381 does not become hot. Therefore, performance degradation or destruction can be prevented.
[0017]
Further, via conductors 342 and 343 and a die bond conductor 361 filled in through holes penetrating the third and fourth insulating layers 301 and 306 are arranged in a die bonding region 161 and a peripheral region thereof, and a terminal conductor for high frequency signals is provided. Since a microwave transmission line is formed using the signal conductor 391 as the signal conductor and the die bond conductor 361 as the ground conductor, a signal can be extracted from the high frequency element 381 without attenuation. Also, a signal can be input without attenuation.
[0018]
In particular, in low-temperature fired ceramics (LTCC), the material of the via conductor is less airtight than the material of the conductor layer, and if a large number of via conductors are arranged for heat dissipation, the airtightness of the cavity in the package is poor. As a result, moisture is mixed in from the outside or gas in the cavity leaks out. In the present embodiment, this problem can be solved by forming the via conductors 221 and 231 arranged in the die bonding region and the conductor layers 361, 321 and 211 in a multilayer structure.
[0019]
FIG. 3 is a cross-sectional view of the high-frequency package taken along line II-II in FIG. 1 when the high-frequency package according to Embodiment 1 of the present invention is mounted on an external circuit board. 3, reference numeral 401 denotes a lid, 402 denotes a shield conductor of the lid, 403 denotes a conductive adhesive, 404 denotes a via land conductor formed of the first conductor layer of the high-frequency package main body, and 405 denotes a first conductor of the high-frequency package main body. An insulating layer, 406 is a via conductor filled in a through hole passing through the first insulating layer 405, 407 is a second insulating layer, and 408 is filled in a through hole passing through the second insulating layer 407. Via conductors, 409 is a second conductor, 451 is an insulating layer of an external circuit board, 452 is a signal terminal conductor formed of a conductive layer of the external circuit board, 453 is a resin ball plated with solder, and 454 is a third insulating layer , 455 is a fourth insulating layer, 456 is a via conductor filled in a through hole penetrating the third insulating layer 454, and 457 is a via conductor penetrating the fourth insulating layer 455 Hama vias conductor, 458 is a signal terminal conductors formed by the fifth conductor layer. The shield conductor 402 of the lid and the via land conductor 404 formed of the first conductor layer of the high-frequency package body are adhered by a conductive adhesive 403 and are electrically connected. By arranging and heating the resin balls 453 between the signal terminal conductors 458 and 452, the signal terminal conductors 458 and 452 are electrically conducted.
[0020]
FIG. 4 is a cross-sectional view of the high-frequency package taken along line III-III in FIG. 1 when the high-frequency package according to Embodiment 1 of the present invention is mounted on an external circuit board. In FIG. 4, reference numeral 501 denotes a shield conductor of a lid, 502 denotes a via conductor filled in a through hole penetrating the second insulating layer 511, and 503 denotes a via conductor penetrating the third insulating layer 512. A filled via conductor, 504 is a cavity for accommodating a high-frequency element, 505 is a high-frequency element, 506 is a second insulating layer, 507 is a first insulating layer, 508 is a conductive adhesive, and 509 is a high-frequency package body. It is a via land formed of the first conductor layer, and is electrically connected to the ground conductors 526 and 527. 511 is a second insulating layer of the high-frequency package body, 512 is a second insulating layer of the high-frequency package body, 513 is a third insulating layer of the high-frequency package body, 514 is a fourth insulating layer of the high-frequency package body, and 521 is the fourth insulating layer. The via conductor filled in the through hole penetrating the layer 514 and the via conductor filled in the through hole penetrating the third insulating layer 513 were formed of a conductor layer of an external circuit board. The ground conductor 524 is a resin ball, 525 is an insulating layer of an external circuit board, 526 is a ground conductor formed of the fifth conductor layer of the high-frequency package body, and 527 is a ground conductor formed of the fourth conductor layer of the high-frequency package body. Reference numeral 528 denotes a die bond conductor formed of the third conductor layer of the high-frequency package body, and 529 denotes a vial formed of the second conductor layer of the high-frequency package body. A de conductor.
[0021]
A ground conductor provided in the dielectric substrate around a cavity for accommodating a high-frequency element, and a via conductor 502 which is electrically connected to the ground conductor and is filled in a through-hole penetrating the dielectric substrate. , 503 and a conductive layer, and via lands 509 and 529, and the shield conductive layer 501 of the lid and the via conductor 509 are electrically connected by a conductive adhesive 508. With this configuration, the electromagnetic shield of the high-frequency element housed in the cavity in the high-frequency package is perfect, and external high-frequency noise does not reach the package or the signal in the package does not leak.
[0022]
By disposing the shield conductor layer 501 of the lid on the cavity 504 side, another circuit, for example, an antenna or a filter can be formed or installed on the surface of the insulating layer 281 of the lid opposite to the shield conductor layer. Will be possible.
[0023]
A resin ball 524 plated with solder is placed between a mounting conductor 526 for mounting on an external circuit board provided on the dielectric multilayer substrate and a conductor 523 of the external circuit board, and is heated. The conductors 526 and 523 become conductive. Conventionally, the purpose was to increase the gap, enable parts mounting, or work as an interference material with an external circuit board to improve reliability, but use resin balls for high-frequency package mounting. As a result, the distance between the high-frequency package and the external circuit board is increased, and the parasitic element can be reduced. In addition, the intervals do not vary, and the accuracy is high, and the high-frequency characteristics are improved. Further, when the high-frequency package is enlarged, the effect is increased.
[0024]
FIG. 5 is a plan view illustrating the first insulating layer, the first conductor layer, and the via conductor of the high-frequency package according to Embodiment 1 of the present invention. In FIG. 5, reference numeral 601 denotes a first insulating layer which is an uppermost insulating layer of a dielectric multilayer substrate of a high-frequency package made of a dielectric material; 611, a via land conductor formed of a first conductor layer of the high-frequency package body; This is a via conductor filled in a through-hole penetrating the insulating layer 601.
[0025]
FIG. 6 is a plan view illustrating the second insulating layer, the second conductor layer, and the via conductor of the high-frequency package according to Embodiment 1 of the present invention. 701 is a second insulating layer, 711 is a via land conductor formed of the second conductor layer, 721 is a via conductor, 731 is a high-frequency signal input / output terminal conductor formed of the second conductor layer, and 741 is a second conductor layer. It is a formed signal input / output or power supply terminal conductor.
[0026]
FIG. 7 is a plan view illustrating the third insulating layer, the third conductor layer, and the via conductor of the high-frequency package according to Embodiment 1 of the present invention. In FIG. 7, reference numeral 801 denotes a via conductor; 802, a via land conductor formed of a third conductive layer; 803, a third insulating layer; 804, a via conductor; 805, a die bond conductor formed of the third conductive layer; Conduction is provided by the conductor and the via conductor 804.
[0027]
FIG. 8 is a plan view illustrating the fourth insulating layer, the fourth conductor layer, and the via conductor of the high-frequency package according to Embodiment 1 of the present invention. 8, reference numeral 901 denotes a via conductor; 902, a via land formed of a fourth conductive layer; 903, a fourth insulating layer; 904, a via conductor; and 905, a ground conductor formed of the fourth conductive layer.
[0028]
FIG. 9 is a plan view illustrating a fourth insulating layer and a fifth conductor layer of the high-frequency package according to Embodiment 1 of the present invention. 1001 is a signal terminal conductor formed of the fifth conductor layer, 1002 is a ground conductor formed of the fifth conductor layer, 1003 is a high-frequency terminal conductor, and 1004 is a fourth insulating layer. This surface is a mounting surface on which the high-frequency package is mounted on the external circuit board. The fifth conductor layer is a mounting conductor layer for conducting the high-frequency package with the conductor layer of the external circuit board.
[0029]
FIG. 10 is a bottom view of the high-frequency package according to Embodiment 1 of the present invention when viewed from below. In FIG. 10, 1101 is a signal terminal conductor formed of the fifth conductor layer, 1102 is a ground conductor formed of the fifth conductor layer, 1103 is a high-frequency terminal conductor, 1104 is a fourth insulating layer, and 1105 is a solder sheath. The plated resin balls 1106 are solder dams made of insulating material for solder isolation, and are formed only between the signal terminal conductors 1101 and 1103 and the ground conductor 1102 on the mounting surface. By not forming a solder dam between the signal terminals 1101 and 1103, dielectric loss inherent to the material of the solder dam does not occur, and high-frequency characteristics can be maintained at a high level. Conventionally, a dam for solder isolation was formed to prevent the flow of solder between each terminal and between patterns in surface mounting.However, in a high-frequency package, the performance is satisfied depending on the arrangement of the solder dam. May not be possible. The method of arranging the solder dams of the present embodiment is arranged so as not to affect the high frequency characteristics at all.
[0030]
In the first embodiment, the shield conductor layer of the lid and the via conductor are electrically connected, but a ground conductor provided in the dielectric substrate is provided around a cavity for accommodating a high-frequency element, Electromagnetic shielding of a high-frequency element is possible at low frequencies only by providing a via land formed of a conductive layer and a via conductor filled in a through-hole penetrating the dielectric substrate through the ground conductor. .
[0031]
Further, the electromagnetic shielding of the high-frequency element can be performed at a low frequency only by providing the cover with the shield conductor.
[0032]
【The invention's effect】
As described above, the present invention can provide a high-frequency package that improves high-frequency characteristics, protects against external high-frequency noise, reduces power leakage to the outside, and enables heat radiation of a high-output element. Furthermore, the generation of leakage power and high-frequency noise can be prevented, the mounting auxiliary guard area is not required, the shield plate is not required around the package, and the mounting area is widened.
[Brief description of the drawings]
FIG. 1 is a plan view of a high-frequency package viewed from above when a lid of the high-frequency package according to the first embodiment of the present invention is attached and detached. FIG. 2 is a diagram illustrating the high-frequency package according to the first embodiment of the present invention mounted on an external circuit board. FIG. 3 is a cross-sectional view of the high-frequency package taken along the line II in FIG. 1; FIG. 3 is a cross-sectional view of the high-frequency package taken along the line II-II in FIG. FIG. 4 is a sectional view of the high-frequency package according to the first embodiment of the present invention taken along line III-III in FIG. 1 when the high-frequency package according to the first embodiment of the present invention is mounted on an external circuit board. FIG. 6 is a plan view showing a first insulating layer, a first conductor layer, and a via conductor of the package. FIG. FIG. 7 is a plan view showing a conductor layer and a via conductor. FIG. 7 is a plan view showing a third insulating layer, a third conductor layer, and a via conductor of the high-frequency package according to the first embodiment of the present invention. FIG. 9 is a plan view illustrating a fourth insulating layer, a fourth conductor layer, and a via conductor of the high-frequency package according to the first embodiment. FIG. 9 illustrates a fourth insulating layer and a fifth conductor layer of the high-frequency package according to the first embodiment of the present invention. FIG. 10 is a bottom view of the high-frequency package according to the first embodiment of the present invention viewed from below. FIG. 11 is a cross-sectional view of the high-frequency package when a conventional high-frequency package is mounted on an external circuit board. Description]
101 Via Land Conductor 121 Signal Terminal Conductor 131 First Insulating Layer 141 of Uppermost Insulating Layer of Dielectric Multilayer Substrate 141 High Frequency Signaling Terminal Conductor 151 Second Insulating Layer 161 Die Bonding Conductor 171 High Frequency Element 201 Insulating Layer 211 Grounding Conductors 221 231 331 332, 333 Via conductor 241 Solder-plated resin ball 251 First insulation layer 261 Wire 271 Cavity 281 Cover insulation layer 291 Conductive adhesive 296 Second insulation layer 301 Third insulation layer 306 Fourth insulation layer 311 Solder isolation Solder dam 321 Ground conductor 341 Ground conductor layer 351 High frequency signal terminal conductor 361 Die bond conductor 371 Shield conductor 381 of lid body High frequency element 391 High frequency signal terminal conductor

Claims (8)

誘電体材料からなる誘電体多層基板と、
蓋体と、
前記誘電体基板と前記蓋体により形成され高周波素子を収納するためのキャビティと、
前記誘電体基板内に設けられた接地導体と、
前記接地導体に導通し、前記誘電体基板を貫通するスル−ホール内に充填されたビア導体とを具備したことを特徴とする高周波パッケージ。
A dielectric multilayer substrate made of a dielectric material;
A lid,
A cavity formed by the dielectric substrate and the lid to house a high-frequency element,
A ground conductor provided in the dielectric substrate,
A high-frequency package comprising: a via conductor that is electrically connected to the ground conductor and is filled in a through-hole penetrating the dielectric substrate.
誘電体材料からなる誘電体多層基板と、
シールド導体層を有する蓋体と、
前記誘電体基板と前記蓋体により形成され高周波素子を収納するためのキャビティと、
前記誘電体基板内に設けられた接地導体と、
前記接地導体に導通し、前記誘電体基板を貫通するスル−ホール内に充填されたビア導体とを具備し、
前記蓋体のシールド導体層と前記ビア導体を導通させたことを特徴とする高周波パッケージ。
A dielectric multilayer substrate made of a dielectric material;
A lid having a shield conductor layer,
A cavity formed by the dielectric substrate and the lid to house a high-frequency element,
A ground conductor provided in the dielectric substrate,
And a via conductor filled in a through-hole that penetrates the ground conductor and penetrates the dielectric substrate,
A high-frequency package wherein the shield conductor layer of the lid and the via conductor are conducted.
前記キャビティ内の前記高周波素子を前記誘電体多層基板に実装するダイボンディング領域に、前記誘電体多層基板を貫通するスル−ホール内に充填されたビア導体と、ダイボンド導体を配置し、前記接地導体に導通させた請求項1又は2に記載の高周波パッケージ。A via conductor filled in a through-hole penetrating the dielectric multilayer substrate and a die bond conductor are arranged in a die bonding region for mounting the high-frequency element in the cavity on the dielectric multilayer substrate, and the ground conductor The high-frequency package according to claim 1, wherein the high-frequency package is made conductive. 前記ダイボンディング領域と、その周辺領域に前記誘電体基板を貫通するスル−ホール内に充填されたビア導体とダイボンド導体を配置し、前記ダイボンド導体と、高周波信号を入出力する端子導体でマイクロ波伝送線路を形成した請求項3に記載の高周波パッケージ。In the die bonding region, a via conductor and a die bond conductor filled in a through-hole penetrating the dielectric substrate are arranged in a peripheral region thereof, and a microwave is formed by the die bond conductor and a terminal conductor for inputting and outputting a high-frequency signal. The high-frequency package according to claim 3, wherein a transmission line is formed. 前記ダイボンディング領域に配置したビア導体と導体層を多層構造にした請求項3に記載の高周波パッケージ。The high-frequency package according to claim 3, wherein the via conductor and the conductor layer arranged in the die bonding region have a multilayer structure. 前記誘電体多層基板に設けられた外部回路基板に実装するための実装面に、絶縁材料からなる半田隔離用の半田ダムを前記実装面上の信号用端子導体と接地導体間に形成した請求項1又は2記載の高周波パッケージ。A solder dam for isolating solder made of an insulating material is formed between a signal terminal conductor and a ground conductor on the mounting surface on a mounting surface for mounting on an external circuit board provided on the dielectric multilayer substrate. 3. The high-frequency package according to 1 or 2. 前記誘電体多層基板に設けられた外部回路基板に実装するための実装導体と、前記外部回路基板の導体層との間に半田外装メッキした樹脂ボールを配置した請求項1又は2記載の高周波パッケージ。3. The high-frequency package according to claim 1, wherein a resin ball plated with solder is disposed between a mounting conductor for mounting on an external circuit board provided on the dielectric multilayer substrate and a conductor layer of the external circuit board. . 誘電体材料からなる誘電体多層基板と、シールド導体を有する蓋体と、前記誘電体基板と前記蓋体により形成され高周波素子を収納するためのキャビティを具備したことを特徴とする高周波パッケージ。A high-frequency package comprising: a dielectric multilayer substrate made of a dielectric material; a lid having a shield conductor; and a cavity formed by the dielectric substrate and the lid for housing a high-frequency element.
JP2002227824A 2002-08-05 2002-08-05 High frequency package Withdrawn JP2004071772A (en)

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Cited By (7)

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KR100822662B1 (en) * 2007-02-26 2008-04-18 전자부품연구원 Front end module substrate and its manufacturing method
KR100870134B1 (en) 2007-10-05 2008-11-24 한국전자통신연구원 Ultra-Wideband Sealed Surface Mount Package for Ultra-High Frequency Single Integrated Circuits
JP2011134956A (en) * 2009-12-25 2011-07-07 Shinko Electric Ind Co Ltd Semiconductor device
CN102496612A (en) * 2011-12-21 2012-06-13 重庆西南集成电路设计有限责任公司 High-isolation integrated circuit packaged by adopting ceramic casing
CN102543720A (en) * 2010-12-07 2012-07-04 中国振华集团永光电子有限公司 Silicon two-way transient voltage suppression diode and manufacture method thereof
KR20170021414A (en) * 2015-08-17 2017-02-28 한국전자통신연구원 Transmitting and receiving package
CN110164852A (en) * 2019-05-24 2019-08-23 中芯长电半导体(江阴)有限公司 Antenna packages structure and packaging method with air chamber

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100822662B1 (en) * 2007-02-26 2008-04-18 전자부품연구원 Front end module substrate and its manufacturing method
KR100870134B1 (en) 2007-10-05 2008-11-24 한국전자통신연구원 Ultra-Wideband Sealed Surface Mount Package for Ultra-High Frequency Single Integrated Circuits
US8362608B2 (en) 2007-10-05 2013-01-29 Electronics And Telecommunications Research Institute Ultra wideband hermetically sealed surface mount technology for microwave monolithic integrated circuit package
JP2011134956A (en) * 2009-12-25 2011-07-07 Shinko Electric Ind Co Ltd Semiconductor device
US8729680B2 (en) 2009-12-25 2014-05-20 Shinko Electric Industries Co., Ltd. Semiconductor device
CN102543720A (en) * 2010-12-07 2012-07-04 中国振华集团永光电子有限公司 Silicon two-way transient voltage suppression diode and manufacture method thereof
CN102496612A (en) * 2011-12-21 2012-06-13 重庆西南集成电路设计有限责任公司 High-isolation integrated circuit packaged by adopting ceramic casing
KR20170021414A (en) * 2015-08-17 2017-02-28 한국전자통신연구원 Transmitting and receiving package
KR102037763B1 (en) * 2015-08-17 2019-10-30 한국전자통신연구원 Transmitting and receiving package
CN110164852A (en) * 2019-05-24 2019-08-23 中芯长电半导体(江阴)有限公司 Antenna packages structure and packaging method with air chamber

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