JP2004055684A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

In manufacturing a semiconductor device intended to have a high density and a low thickness, a thinned semiconductor substrate can be easily handled, and dicing of the semiconductor substrate can be performed in a short time.
SOLUTION: A semiconductor substrate 20 with a protective film having a protective film 22 adhered to the surface on the side where each element formation region to be divided as a semiconductor device is defined is fixed and held on jigs 11 to 13. After the metal layers 23 and 24 are formed on the entire exposed side of the semiconductor substrate 20 with a protective film, a portion of the metal layers 23 and 24 corresponding to a boundary portion separating each element formation region is removed by laser. Then, the semiconductor substrate 21 is divided (diced) into the semiconductor devices 30 along the portion where the metal layer is removed by plasma etching or the like.
[Selection diagram] Fig. 4

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a technique useful for easily handling a semiconductor substrate such as a thinned silicon wafer when manufacturing a semiconductor device such as an LSI chip.
[0002]
[Prior art]
Conventionally, a silicon wafer used as a substrate in the manufacture of a semiconductor device has a relatively large thickness of about 200 μm or more. (Such as "dicing") is relatively easy, and when used for a specific application (such as a silicon chip having an antenna effect), the chip must have a shielding function. Processing in which a metal layer was formed on the back surface of a silicon wafer was also possible.
[0003]
On the other hand, with recent demands for higher density and thinner semiconductor devices (devices), various methods have been proposed in order to meet the demands. As one method, for example, for each region to be divided as a device on a silicon wafer, a hole is drilled at a required depth, and the hole is filled with a conductor by plating or the like. After forming a desired device pattern (including a circuit pattern, a wiring pattern, etc.) so as to be electrically connected to the conductor, the device pattern is covered with an insulating film made of a polyimide resin or the like. The back surface is polished by a back grinding method or the like, and the wafer is thinned to a predetermined thickness (about 50 μm), while the conductor is exposed, and then the wafer is diced into each chip unit to make individual devices. There is a way to do that. In this method, an external connection terminal such as a metal bump is bonded to the back surface (the surface where the conductor is exposed) of the silicon wafer before the dicing is performed, or the device has a shielding function. In some cases, a metal layer is formed on the back surface of the silicon wafer.
[0004]
When dicing is performed, mechanical means such as a dicer is usually used.
[0005]
[Problems to be solved by the invention]
As described above, the conventional silicon wafer was relatively thick, so that its handling was relatively easy. However, with the recent demand for thinning, a process of thinning the silicon wafer has been performed. It is technically very difficult to handle the thinned silicon wafer as it is. This is because cracks may occur during handling of the thinned silicon wafer, and in some cases, the silicon wafer may be broken or the silicon wafer may be warped.
[0006]
That is, there is a problem that it is very difficult to handle the thinned silicon wafer without damaging it (formation of a metal layer by plating or the like, dicing for each chip).
[0007]
In addition, in the conventional technology, dicing is performed by a mechanical means such as a dicer.For example, when manufacturing a sub-millimeter-order ultra-small device such as a microchip, a dicing interval between devices on a silicon wafer is extremely narrow. For this reason, dicing takes a considerable amount of time to complete and increases the cost, which is not practical.
[0008]
In this case, if the thickness of the silicon wafer is relatively thick, there is a disadvantage that the time required for dicing is further increased by the thicker. On the other hand, if the silicon wafer is thinned to a predetermined thickness, During the process, the silicon wafer may be cracked or broken by the mechanical impact, so that dicing requires great care and is technically difficult.
[0009]
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device that is intended to have a higher density and a smaller thickness in view of the above-mentioned problems in the prior art. An object of the present invention is to enable dicing of a substrate in a short time.
[0010]
[Means for Solving the Problems]
According to one embodiment of the present invention, a protective film is attached to a surface of a semiconductor substrate on a side where each element formation region to be divided as a semiconductor device is defined. Fixing the semiconductor substrate with the protective film to the jig by exposing only the surface opposite to the side to which the protective film is attached, and the semiconductor substrate with the protective film fixed and held by the jig. Forming a metal layer on the entire surface on the exposed side of the metal layer; removing a portion of the metal layer corresponding to a boundary portion separating each of the element formation regions by laser; and dry etching or wet etching. Dividing the semiconductor substrate into the respective semiconductor devices so as to include one element formation region along the portion where the metal layer is removed. The method of manufacturing a semiconductor device according to is provided.
[0011]
According to the method of manufacturing a semiconductor device according to this aspect, prior to handling the semiconductor substrate (forming a metal layer on the back surface, dicing each semiconductor device (chip), etc.), each element formation region of the semiconductor substrate is formed. Since the semiconductor substrate with the protective film whose surface on which is defined is covered with a protective film is fixedly held on a jig, even if the semiconductor substrate is thinned to a predetermined thickness, the thickness of the semiconductor substrate is reduced. The handled semiconductor substrate can be easily handled without damaging it.
[0012]
Further, the dicing of each semiconductor device (chip) is not performed by a mechanical means such as a dicer as used in the conventional technology, but by a portion which is not removed by a laser (that is, divided into each chip). Since the metal layer of a portion corresponding to each element formation region to be formed) is dry-etched using an etching resist, batch dicing can be performed in a short time.
[0013]
As described above, since it becomes possible to collectively dice the thinned semiconductor substrate in a short time, it is expected that a new semiconductor chip manufacturing technology such as a microchip will be spurred.
[0014]
According to another aspect of the present invention, in the method of manufacturing a semiconductor device according to the above-described aspect, the step of removing a predetermined portion of the metal layer by the laser and the step of dry-etching or wet-etching the semiconductor substrate. In place of the step of dividing the semiconductor device, the laser is used to remove a portion of the metal layer corresponding to a boundary portion that divides each of the element formation regions, and further along the removed portion of the metal layer. A method of manufacturing a semiconductor device is provided, comprising a step of dividing the semiconductor substrate into each semiconductor device so as to include one element formation region.
[0015]
According to the method of manufacturing a semiconductor device according to this embodiment, in addition to the effects obtained by the method of manufacturing a semiconductor device according to the above-described embodiment, a process of removing a predetermined portion of a metal layer and a dicing process of a semiconductor substrate are further performed. Is performed in one step, so that the process can be simplified.
[0016]
According to still another aspect of the present invention, in the method of manufacturing a semiconductor device according to each of the above-described embodiments, after the step of dividing the semiconductor substrate into the respective semiconductor devices, the respective semiconductor devices are exposed by a laser. A step of patterning each of the metal layers into a required circuit element shape.
[0017]
According to the method of manufacturing a semiconductor device according to this embodiment, in addition to the effects obtained by the method of manufacturing a semiconductor device according to each of the above-described embodiments, the metal layers of each semiconductor device are further separated by laser after dicing. Since the pattern is formed into a required shape, it can be used as an inductance or an antenna according to the shape to be patterned. This leads to a reduction in the pattern area formed in each semiconductor device.
[0018]
Further, according to another aspect of the present invention, there is provided a semiconductor device manufactured by the method of manufacturing a semiconductor device according to each of the above-described embodiments.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 schematically shows a configuration example of a jig used when carrying out a method of manufacturing a semiconductor device according to the present invention.
[0020]
As shown in the drawing, a jig 10 includes a lower part 11 for placing and holding a processing object, an upper part 12 for pressing and holding the processing object from above in cooperation with the lower part 11, It comprises a jig clamp 13 for fixing the two parts 11, 12 for sandwiching and holding the object from the circumferential direction thereof (see FIG. 1 (c)).
[0021]
As will be described later, the object to be processed is a surface on the side of the silicon wafer 21 (indicated by a broken line in the figure) on which a device pattern such as a circuit pattern and a wiring pattern is formed (that is, a final surface). (Hereinafter referred to as a "wafer with a protective film" for convenience) on the surface on the side where each element formation region to be divided as a semiconductor device (chip) is defined.
[0022]
The lower part 11 and the upper part 12 are each made of stainless steel (SUS) or the like, and their surfaces are Teflon (registered trademark) processed. The lower part 11 is formed in a circular shape as shown in FIG. 1A, and a packing P1 made of silicone rubber, Teflon, or the like is arranged in a ring shape in the vicinity along a peripheral surface thereof. The size of the packing P1 (ring) is selected to be slightly larger than the size of the silicon wafer 21. On the other hand, the upper part 12 is formed in a ring shape as shown in FIG. 1B, and the outer diameter of the ring is the same as the outer diameter of the lower part 11 and is defined by the inner diameter of the ring. The size of the opening is selected to be smaller than the size of the silicon wafer 21. Further, a packing P2 made of a similar material is arranged in a ring shape in the vicinity along the inner peripheral surface of the upper part 12.
[0023]
A method for setting a wafer with a protective film on the jig 10 (11 to 13) configured as described above will be described with reference to FIG.
[0024]
First, as shown in FIG. 2A, an adhesive (not shown) is applied to the surface of the lower part 11 on which the packing P1 is formed, and the protective film 22 of the protective film-attached wafer 20 is attached. The wafer 20 with the protective film is fixed to a predetermined position of the lower part 11 with an adhesive, with the surface on which it is attached facing down. By fixing the protective film-attached wafer 20 using the adhesive in this way, the difference in the thermal expansion coefficient between both surfaces (the silicon wafer 21 side and the protective film 22 side) of the protective film-attached wafer 20 causes the difference. The possibility that the wafer is warped can be eliminated.
[0025]
Next, the two parts 11, 12 are aligned so that the packing P2 of the upper part 12 contacts the peripheral surface of the silicon wafer 21 and the packing P1 of the lower part 11 contacts the peripheral surface of the upper part 12. After that, the two parts 11, 12 holding the wafer 20 with the protective film are firmly fixed and held by a plurality of (four in the example of FIG. 2B) jig clamps 13 so as to be sandwiched from the circumferential direction. I do. As a result, in the wafer 20 with a protective film, only the back surface (the surface opposite to the surface on which the device pattern is formed) of the silicon wafer 21 is exposed to the outside. In other words, the wafer 20 with the protective film is hermetically sealed from the outside by the packings P1, P2 of both parts 11, 12, except for the back surface of the silicon wafer 21.
[0026]
Hereinafter, a method of manufacturing the semiconductor device according to the first embodiment will be described with reference to FIGS.
[0027]
First, in the first step (see FIG. 3A), the surface of the silicon wafer 21 thinned to a thickness of about 50 μm (on the lower side in the illustrated example) on which the device pattern is formed is formed. The protection film-equipped wafer 20 to which the protection film 22 having a thickness of about 100 μm to 1 mm is attached is set on the jigs 11 to 13 by the method described with reference to FIG.
[0028]
The protective film 22 includes, for example, a resin film made of an epoxy resin, a polyimide resin, or the like, or a sheet-shaped support made of a plastic film such as PET (polyethylene terephthalate), on one surface of which an acrylic or rubber-based material is used. What applied the adhesive (resin in an unhardened state) is used. Alternatively, as another form of the protection film 22, one side (the side to be polished and the other side) is used to protect the silicon wafer when the silicon wafer having a relatively large thickness of about 100 μm to 300 μm is thinned by mechanical polishing such as a back grinding method. The back-grinding protection tape (hereinafter, also referred to as “BG tape”) attached to the opposite surface) may be used as it is.
[0029]
This protective film 22 is for facilitating the handling of the thinned silicon wafer 21 after this step, and also for preventing the silicon wafer 21 from being damaged during the handling.
[0030]
In the next step (see FIG. 3B), a metal layer 23 is formed by electroless plating on the exposed back surface of the silicon wafer 21 of the wafer 20 with a protective film.
[0031]
That is, as shown in the figure, a plating tank 41 containing an electroless nickel (Ni) plating solution 42 (a solution containing Ni ions and a reducing agent) was prepared, and was set in the jigs 11 to 13 in the previous step. The wafer 20 with the protective film is immersed in the plating bath 41 to cause an oxidation-reduction reaction in the electroless Ni plating solution 42 so that the reducing agent is oxidized and Ni ions are reduced to Ni at the same time. By depositing Ni on the back surface of the silicon wafer 21, an electroless Ni plating layer (metal layer 23) is formed to a thickness of about 0.2 μm to 0.4 μm. As the electroless Ni plating solution 42, for example, an electroless Ni plating solution manufactured by Meltex Co., Ltd .: Melplate NI-867 is preferably used.
[0032]
The electroless Ni plating layer 23 is formed to increase the adhesion between the underlying silicon (Si) wafer 21 and the metal layer formed in the next step.
[0033]
After the formation of the metal layer 23 (electroless Ni plating layer), the wafer 20 with the protective film is taken out of the plating tank 41 while being set in a jig.
[0034]
In the next step (see FIG. 3C), a metal layer 24 is further formed by electroless plating on the metal layer 23 (electroless Ni plating layer) formed in the previous step. The formation of the metal layer 24 is performed by a “substitution plating” process by substitution with a metal (in this case, Ni) of the underlayer.
[0035]
That is, as shown in the figure, a plating tank 43 containing an electroless gold (Au) plating solution 44 (a solution containing Au ions and a reducing agent) is prepared, and the silicon wafer 21 of the protective film-attached wafer 20 is prepared in the previous step. The electroless Ni plating layer 23 formed on the back surface is immersed in a plating bath 43, and the Au ions in the electroless Au plating solution 44 are replaced with Au in exchange for the underlying metal ions (Ni ions) being oxidized and dissolved. By depositing Au on the electroless Ni plating layer 23 so as to reduce the thickness of the electroless Ni plating layer 23, the electroless Au plating layer (metal layer 24) is formed to be extremely thin (less than 0.05 μm). As the electroless Au plating solution 44, for example, an electroless Au plating solution: Melplate AU-601 manufactured by Meltex Corporation is preferably used.
[0036]
The electroless Au plating layer 24 is formed to reduce the electric resistance of the entire metal layer (Ni / Au) formed on the back surface of the silicon wafer 21.
[0037]
Further, in this step, a very thin metal layer 24 (electroless Au plating layer) having a thickness of 0.05 μm or less is formed by the displacement plating process. The electroless Au plating treatment as performed in the above is performed.
[0038]
After the formation of the metal layer 24 (electroless Au plating layer), the wafer 20 with the protective film is taken out of the plating tank 43 while being set in a jig.
[0039]
In the next step (see FIG. 4A), the metal layer having a two-layer structure (electroless Ni plating layer 23 / electroless Au plating layer 24) is patterned by laser trimming. That is, predetermined portions of the metal layers 23 and 24 are removed by laser. The predetermined portion to be removed is a portion corresponding to a boundary portion for dividing each element formation region of the silicon wafer 21 to be finally divided as a semiconductor device (chip) (portion indicated by SP in FIG. 6B). ). As the laser, for example, a UV-YAG laser, an excimer laser, or the like is used.
[0040]
In the next step (see FIG. 4B), predetermined portions of the metal layers 23 and 24 removed in the previous step, that is, each element formation region, are separated by dry etching (plasma etching in this embodiment). The silicon wafer 21 is divided into individual semiconductor devices (chips) along the boundary portion so as to include one element formation region (dicing). The gas used for plasma discharge is mainly oxygen (O 2 ₂ ), Nitrogen (N ₂ ), Hydrogen (H ₂ ) Is used, but in order to increase the etching rate, CF ₄ , SF ₆ A mixture of such reactive gases is used.
[0041]
As a result, each semiconductor device (chip) is separated while being attached to the protective film 22.
[0042]
In this step, dicing of each semiconductor device unit is performed by plasma etching. In addition to the plasma etching, dicing is performed by etching using an ion beam such as argon (Ar) ions (ion beam etching). It is also possible. Alternatively, dicing can be performed by wet etching using a solution of an acid, an alkali, an organic solvent, or the like instead of the dry etching.
[0043]
In this case, it should be noted that when dicing each semiconductor device, before dicing the protective film 22 holding each semiconductor device (that is, the state in which the protective film 22 is completely cut). (Before) the process such as plasma etching is terminated.
[0044]
After this step, the wafer 20 with the protective film diced for each semiconductor device is removed from the jigs 11 to 13.
[0045]
In the last step (see FIG. 4C), the protection film 22 is peeled off from the wafer 20 with the protection film diced for each semiconductor device. That is, each semiconductor device (chip) 30 is removed from the protective film 22. Each semiconductor device 30 includes a silicon substrate 21a including a corresponding element formation region, and Ni / Au metal layers 23a and 24a formed on the back surface of the silicon substrate 21a. Note that a semiconductor device (a portion indicated by 31 in the drawing) manufactured from a peripheral portion of the silicon wafer is removed as a defective chip.
[0046]
As described above, according to the method for manufacturing a semiconductor device according to the first embodiment, the handling of the thinned silicon wafer 21 (the formation of the metal layers 23 and 24 on the back surface of the wafer, the formation of each semiconductor device ( Prior to performing dicing (chips) of 30 units, the silicon wafer 21 with the protective film 22 is covered with a protective film 22 on the surface of the silicon wafer 21 on which the device pattern is formed, as shown in FIG. Is fixedly held on the jigs 11 to 13, so that the thinned silicon wafer 21 can be easily handled without damaging it.
[0047]
Further, dicing of 30 units of each semiconductor device (chip) is performed by laser trimming as shown in FIGS. 4 (a) and 4 (b) instead of mechanical means such as a dicer used in the prior art. Is performed by plasma etching using the metal layers 23 and 24 of the portions not removed by the plasma etching using the metal layers 23 and 24 as etching resists (portions corresponding to the respective element forming regions to be divided into each chip unit), and thus a large number of batches can be performed in a short time Dicing can be performed. As described above, it is expected that a large-scale batch dicing of the thinned silicon wafer 21 will be used to accelerate a new silicon chip manufacturing technology such as a microchip.
[0048]
In addition, since dicing is performed by plasma etching, curved dicing, which cannot be performed by conventional mechanical dicing, can be performed.
[0049]
When the back-grinding protection tape (BG tape) used for thinning the silicon wafer is used as the protection film 22 without peeling it off, there is no need to attach a new protection film to the silicon wafer 21. The process can be simplified.
[0050]
Further, the presence of the metal layers 23 and 24 on the back surface of the silicon wafer 21 allows the chip to have a shielding function when used for, for example, a silicon chip having an antenna effect.
[0051]
Further, since the metal layers 23 and 24 are patterned (removal of predetermined portions of the metal layers 23 and 24) by laser trimming, a resist for patterning (such as a dry film) used in the related art is used. Need not be used, and there is no need to remove the resist. Thereby, the process can be simplified, and the BG tape can be prevented from being damaged by the resist stripping solution as conventionally used.
[0052]
Further, the wafer 20 with the protective film is fixed and held on the jigs 11 to 13 so as to swing in the plating solutions 42 and 44 when performing the electroless plating process (see FIGS. 3B and 3C). And so on.
[0053]
In addition, in the related art, vapor deposition or sputtering is performed to form a metal layer on a silicon wafer, and such processing is performed while evacuating air from a processing chamber and maintaining a vacuum state. Undesirable gas is generated from the BG tape attached to the silicon wafer.
[0054]
On the other hand, in the present embodiment, the metal layers 23 and 24 are formed by electroless plating (see FIGS. 3B and 3C), and the protection film 22 (BG tape) is Since the parts 11 and 12 are completely shielded from the plating solutions 42 and 44 by the packings P1 and P2, generation of gas from the protective film 22 (BG tape) can be prevented.
[0055]
Next, a method for manufacturing a semiconductor device according to the second embodiment will be described with reference to FIG. 5 showing a part of the manufacturing process.
[0056]
The method of manufacturing the semiconductor device according to the second embodiment differs from the method of manufacturing the semiconductor device according to the first embodiment (FIGS. 3 and 4) in the steps of FIGS. 4A and 4B. Instead of the performed processing, predetermined portions of the metal layers 23 and 24 (each element formation region of the silicon wafer 21) are separated by a laser (UV-YAG laser, excimer laser, or the like) as shown in FIG. The portions corresponding to the boundary portions) are removed, and the laser is used to separate the silicon wafer 21 along the removed portions of the metal layers 23 and 24 so that each of the semiconductor devices (chips) includes one element formation region. The difference is that dicing is performed in units. Other steps are the same as those in the first embodiment, and a description thereof will be omitted.
[0057]
As described above, the method of manufacturing the semiconductor device according to the present embodiment is characterized in that the patterning of the metal layers 23 and 24 and the dicing of the silicon wafer 21 are performed in one step.
[0058]
According to the method of manufacturing the semiconductor device according to the second embodiment, in addition to the effects obtained in the first embodiment, the patterning process of the metal layers 23 and 24 and the dicing process of the silicon wafer 21 are further performed in one step. Since the process is performed in a single process (see FIG. 5A), the process can be simplified.
[0059]
Further, since the metal layers 23 and 24 are formed on the back surface of the silicon wafer 21, heat generated by the laser can be effectively dissipated through the metal layers 23 and 24 during dicing by the laser. The circuit of the silicon wafer 21 can be prevented from being damaged by heat.
[0060]
Next, a method for manufacturing a semiconductor device according to the third embodiment will be described with reference to FIG.
[0061]
6A shows a part of a manufacturing process of the semiconductor device according to the present embodiment, and FIG. 6B schematically shows an example of a pattern formed in the process of FIG. Things.
[0062]
The method for manufacturing a semiconductor device according to the third embodiment is different from the method for manufacturing a semiconductor device according to the first and second embodiments (FIGS. 3, 4, and 5) in FIG. As shown in FIG. 6A, a laser (UV-YAG laser, excimer laser) is used between the process and the process of FIG. 4C or between the process of FIG. 5A and the process of FIG. Etc.) in that a process of patterning the metal layers 23 and 24 of each semiconductor device after dicing into a required shape by trimming according to the above method is added. The other steps are the same as those in the first and second embodiments, and a description thereof will be omitted.
[0063]
As described above, in the method of manufacturing a semiconductor device according to the present embodiment, after dicing the silicon wafer 21, the metal layers 23 and 24 of each semiconductor device (chip) are replaced with required circuit elements (EP in FIG. 6B). (Part shown in the figure). As the circuit element to be patterned, there are an antenna, a SAW filter, and the like, in addition to the coil-shaped inductance element EP as shown in FIG. SP indicates a portion corresponding to a boundary portion that divides each element formation region of the silicon wafer 21 to be finally divided into each chip unit.
[0064]
According to the method of manufacturing a semiconductor device according to the third embodiment, in addition to the effects obtained in the first and second embodiments, after dicing is performed for each semiconductor device (chip), Since each of the metal layers 23 and 24 is patterned into a required circuit element shape, it can be used as an inductance, an antenna, a SAW filter, or the like according to the patterning shape. The area of the formed pattern can be reduced.
[0065]
The reason why laser trimming (FIG. 6A) is performed after dicing is that if the metal layers 23 and 24 are patterned into required circuit element shapes before dicing, plasma dicing (FIG. This is because the metal layers 23 and 24 cannot be used as a dicing protective film during b)) or laser dicing (FIG. 5A) (that is, the circuit element pattern may be damaged).
[0066]
【The invention's effect】
As described above, according to the present invention, in manufacturing a semiconductor device intended for high density and thinning, the thinned semiconductor substrate can be easily handled, and dicing of the semiconductor substrate can be performed. This can be performed in a short time.
[Brief description of the drawings]
FIG. 1 is a view showing one configuration example of a jig used when carrying out a method of manufacturing a semiconductor device according to the present invention.
FIG. 2 is a view for explaining a method of setting a wafer with a protective film on the jig of FIG. 1;
FIG. 3 is a sectional view illustrating a manufacturing process of the semiconductor device according to the first embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a manufacturing process following the manufacturing process of FIG. 3;
FIG. 5 is a cross-sectional view showing a part of the manufacturing process of the semiconductor device according to the second embodiment of the present invention.
FIG. 6 is a diagram schematically illustrating a part of a manufacturing process of a semiconductor device according to a third embodiment of the present invention and an example of a pattern formed in the manufacturing process.
[Explanation of symbols]
10 ... Jig,
11 ... lower part,
12 Upper part,
13 ... Jig clamp,
20: wafer with protective film,
21: silicon wafer (semiconductor substrate),
21a: silicon substrate,
22 ... Protective film (BG tape etc.),
23, 23a ... electroless Ni plating layer (first metal layer),
24, 24a ... electroless Au plating layer (second metal layer),
30 ... semiconductor device (chip),
41, 43 ... electroless plating tank,
42 ... Electroless Ni plating solution,
44 ... Electroless Au plating solution,
EP: pattern (circuit element) formed by laser trimming of the metal layer,
P1, P2 ... packing,
SP: a part corresponding to a boundary part that divides each element formation region (semiconductor device).

Claims (9)

A semiconductor substrate with a protective film having a protective film adhered to the surface of the semiconductor substrate on which the element forming regions to be divided as semiconductor devices are defined is opposite to the side on which the protective film is adhered. A step of exposing only the side surface and fixing and holding the jig,
A step of forming a metal layer on the entire exposed side of the semiconductor substrate with a protective film fixed and held by the jig,
Removing a portion of the metal layer, which corresponds to a boundary portion that divides each of the element formation regions, with a laser;
Dividing the semiconductor substrate into each semiconductor device along the portion where the metal layer is removed by dry etching or wet etching so that each semiconductor device includes one element formation region. Manufacturing method. The method according to claim 1, wherein in the step of dividing the semiconductor substrate into the semiconductor devices, the dry etching or the wet etching is terminated before the protective film holding each semiconductor device is divided. A method for manufacturing a semiconductor device. Instead of the step of removing a predetermined portion of the metal layer by the laser and the step of dividing the semiconductor substrate into each semiconductor device by the dry etching or wet etching,
By using a laser, a portion of the metal layer, which corresponds to a boundary portion that divides each of the element formation regions, is removed, and further, one semiconductor device formation region is formed along the semiconductor substrate along the removed portion of the metal layer. 2. The method according to claim 1, further comprising the step of dividing the semiconductor device into semiconductor devices so as to be included. 4. The semiconductor device according to claim 3, wherein, in the step of dividing the semiconductor substrate into the respective semiconductor devices, the laser irradiation is terminated before the protective film holding each semiconductor device is divided. Manufacturing method. After the step of dividing the semiconductor substrate into each semiconductor device,
5. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of patterning each exposed metal layer of each semiconductor device into a required circuit element shape by using a laser. Method. The step of forming the metal layer,
Immersing the semiconductor substrate with a protective film fixed and held in the jig in a first electroless metal plating solution, and depositing the metal by an oxidation-reduction reaction to form a first metal layer;
The semiconductor substrate with a protective film on which the first metal layer is formed is immersed in a second electroless metal plating solution, and the second metal layer is subjected to a displacement plating process by replacing the first metal layer with a metal. Forming a semiconductor device. 6. The method according to claim 1, further comprising the step of: The semiconductor substrate is formed by polishing a relatively thick semiconductor substrate in which each of the element formation regions is defined on one surface from a surface opposite to the side on which each of the element formation regions is defined to a predetermined thickness. The method for manufacturing a semiconductor device according to claim 1, wherein the method is obtained by thinning. A step of forming a metal layer on a surface of the semiconductor substrate opposite to a surface on which each element formation region to be divided as a semiconductor device is defined;
Removing a portion of the metal layer corresponding to a boundary portion that divides each of the element formation regions;
Etching the semiconductor substrate along a portion from which the metal layer has been removed by dry etching or wet etching, and dividing the semiconductor substrate. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 1.

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