JP2004054281A - Electro-optical devices and electronic equipment - Google Patents

Abstract

An electro-optical device having a long operating life by preventing as much as possible moisture from entering a TFT.
An electro-optical device includes a pixel electrode (9a), a thin film transistor (30) connected to the pixel electrode, a scanning line (3a) connected to the pixel electrode (9a), and data on a TFT array substrate (10). A line (6a) and a nitride film (401) formed at least on the surface of the data line.
[Selection] Fig. 2

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention belongs to the technical field of electro-optical devices and electronic devices, and particularly includes an electro-optical device and an electronic device including a pair of substrates sandwiching an electro-optical material such as a liquid crystal, and including various wirings on the substrates. Belongs to the technical field of equipment.
[0002]
[Background Art]
Pixel electrodes in which electro-optical materials such as liquid crystals are arranged in a matrix, and thin film transistors (Thin Film Transistors; hereinafter, appropriately referred to as “TFTs”) connected to each of the electrodes, connected to each of the TFTs, and 2. Description of the Related Art There is known an electro-optical device capable of so-called active matrix driving by providing a scanning line, a data line, and the like provided in parallel in a column direction.
[0003]
Such an electro-optical device includes, in addition to a TFT array substrate having the above-described configuration, a counter substrate including a common electrode opposed to the TFT array substrate with an electro-optical material such as liquid crystal interposed therebetween. In addition to the above-described TFTs, scanning lines, data lines, and the like, the TFT array substrate also has a storage capacitor provided with the TFTs for maintaining the electric field applied to the pixel electrodes for a certain period, It is provided with an interlayer insulating film for avoiding an electric short circuit between the components, and a contact hole provided in the interlayer insulating film for establishing an electrical connection between the components.
[0004]
[Problems to be solved by the invention]
However, the conventional electro-optical device has the following problems. That is, the lifetime of the TFT was relatively short. This is because when moisture enters a semiconductor layer or a gate insulating film constituting a TFT, water molecules diffuse into an interface between the gate insulating film and the semiconductor layer to generate positive charges, and the threshold voltage is relatively short. This is because Vth rises. Such a phenomenon is more appropriate in a P-channel TFT.
[0005]
When the TFT has such a relatively short life, the entire electro-optical device is naturally affected, and a deterioration in image quality is observed from a relatively early stage, and the device itself eventually stops operating. There is even fear.
[0006]
Note that such a problem becomes more serious when the electro-optical device is used in a high-temperature and high-humidity environment. This is because it can be said that the chance of water intrusion into the TFT is increasing. In the case where the electro-optical device is used as a light valve of a liquid crystal projector, light emitted from a relatively strong light source provided in the liquid crystal projector is applied to the electro-optical device or the light valve. Therefore, they will reach high temperatures. Such a use environment is a harsher environment from the viewpoint of maintaining the life of the TFT, and the above-described problems are likely to become apparent.
[0007]
Incidentally, as described above, various components such as TFTs, scanning lines and data lines and an interlayer insulating film for separating these components are formed on the TFT array substrate. However, it is not possible to sufficiently prevent the mixing of the water.
[0008]
The present invention has been made in view of the above problems, and an electro-optical device having a long operational life by preventing water from entering a TFT as much as possible, and an electronic apparatus including such an electro-optical device. The task is to provide
[0009]
[Means for Solving the Problems]
The electro-optical device of the present invention, in order to solve the above problems, on the substrate, a thin film transistor provided corresponding to the intersection of the scanning line and the data line, and a pixel electrode provided corresponding to the thin film transistor, at least A nitride film formed on the data line surface.
[0010]
According to the electro-optical device of the present invention, so-called active matrix driving is performed by controlling the operation of the thin film transistor through the scanning line and applying an image signal to the pixel electrode through the data line and through the thin film transistor. It becomes possible.
[0011]
Here, in particular, in the present invention, since the nitride film is formed on at least the data line surface, the following operation and effect can be obtained. That is, it is possible to prevent moisture from entering the thin film transistor or the gate insulating film or the semiconductor layer constituting the thin film transistor. This is because the nitride film has a dense structure.
[0012]
Therefore, in the electro-optical device according to the present invention, stable operation can be performed for a relatively long period.
[0013]
In the present invention, the nitride film may be formed at least on the surface of the data line. This means that the nitride film may be formed on the scanning line, or in some cases, over the entire surface of the substrate. It means that it may be formed. As the “nitride film” in the present invention, typically, a silicon nitride film (SiN film, SiON film, or the like) is assumed. However, it goes without saying that other things may be used.
[0014]
In one aspect of the electro-optical device of the present invention, the pixel electrodes are arranged in a matrix, and the scanning lines and the data lines are formed in a shape corresponding to the matrix along a direction intersecting each other. The nitride film is formed on at least the data line surface and the scanning line.
[0015]
According to this aspect, since the scanning lines and the data lines are formed in a lattice shape or the like as a whole, the nitride film formed thereon can also be formed in a lattice shape or the like. Become. Therefore, first, the above-described operation and effect of preventing the intrusion of water can be more reliably achieved.
[0016]
Further, the fact that the nitride film can be formed in such a shape means that it is possible to adopt a form in which the nitride film does not exist on almost the entire surface of the pixel electrode. It is possible to maintain the transmittance of the entire device. Therefore, according to this aspect, it is possible to provide a brighter high-quality image, despite the fact that the above-described effect of extending the life can be obtained due to the presence of the nitride film. Incidentally, according to the study of the present inventor, it has been confirmed that the transmittance is reduced by about 4% when the nitride film is left on the entire surface, as compared with the case where no nitride film is provided.
[0017]
In addition, the term “arrayed in a matrix” as used in the present embodiment includes not only a case where each pixel row and each pixel column extend vertically and horizontally, but also a case where they are two-dimensionally arranged in a meandering or staggered manner. It is a broad concept. Therefore, the “shape corresponding to the matrix shape” in this embodiment must be interpreted in consideration of what has just been described.
[0018]
In another aspect of the electro-optical device of the present invention, the nitride film is formed around an image display area defined as an area where the pixel electrode, the scanning line, and the data line are formed.
[0019]
According to this aspect, since the nitride film is formed at least on the data line surface, or at least on the data line surface and on the scanning line, and also around the image display area, the above-described water infiltration prevention effect can be improved. It is possible to ensure that it is exhibited.
[0020]
In this aspect, in particular, it is preferable that the nitride film is formed only on the data line in addition to the periphery of the image display region.
[0021]
According to such a configuration, as described above, it is possible to take a form in which the nitride film does not exist on almost the entire surface of the pixel electrode, and therefore, it is possible to maintain the transmittance of the entire electro-optical device. Can be achieved.
[0022]
Further, according to the present embodiment in which the nitride film is formed only on the data lines, it is possible to reduce the stress acting inside the nitride film, as is apparent in comparison with the case where the nitride film is formed on the entire surface of the substrate. Therefore, it is possible to avoid a situation in which the nitride film itself is broken by its internal stress, and the internal stress acts to the outside, so that other structures existing around the nitride film (for example, interlayer) It is also possible to prevent a situation in which a crack is generated in the insulating film or the like. This can be said to be substantially the same for the nitride film having the above-mentioned lattice shape or the like.
[0023]
Moreover, according to the confirmation of the present inventor, even when the nitride film is formed only around the image display area and on the data lines, the operating life of the thin film transistor or the electro-optical device is extended to about three times as long as before. It is possible. Therefore, according to this aspect, it is possible to effectively prevent the intrusion of moisture into the TFT by using only the minimum necessary nitride film.
[0024]
In this embodiment, the fact that the nitride film exists “only on the data line” means that the nitride film exists only immediately above the data line and also includes the nitride film around the data line. It is also included when you do. In short, when viewed from the whole electro-optical device, all the forms in which the nitride film exists substantially only around the data line are included in the scope of the present configuration.
[0025]
In another aspect of the electro-optical device of the present invention, the nitride film is formed in a region other than a light transmitting region on the substrate.
[0026]
In this embodiment, first, the “light transmitting region” refers to a region where light that contributes to image display passes through the electro-optical device, and more specifically, for example, is arranged in a matrix. The region where the pixel electrode is formed substantially corresponds to the region. Or, in another expression, it refers to a region excluding a region where scanning lines and data lines are formed and a light-shielding region where a lattice-like light-shielding film is formed from the entire region of the substrate.
[0027]
Therefore, according to this aspect, since the nitride film is formed in a portion that does not hinder the progress of light that contributes to image display, the transmittance of the entire electro-optical device may be reduced. There is no.
[0028]
In another aspect of the electro-optical device of the present invention, a width of the nitride film formed on the data line is larger than a width of the data line.
[0029]
According to this aspect, it is possible to reduce damage to the data lines, which may occur during the manufacturing process of the electro-optical device.
[0030]
That is, for example, when the case where the nitride film according to the present invention is formed only on the data line is considered, specifically, first, an original film of the nitride film is formed on the entire surface of the substrate, and then a predetermined pattern (in this case, A manufacturing method using a so-called photolithography method, such as forming a resist having a “pattern covering only the data lines” and then performing etching on the resist and the original film, is typical. Is assumed. However, in this method, since the etching step is interposed as described above and the resist stripping step is included, there is a possibility that the data lines may be unnecessarily damaged during these steps. It is.
[0031]
However, in this embodiment, since the width of the nitride film is made larger than the width of the data line, the damage due to the etching or the like is covered by the peripheral portion of the nitride film, and the Damage can be minimized.
[0032]
Thereby, the stable operation of the electro-optical device is ensured, and this contributes to the display of high-quality images.
[0033]
In this embodiment, particularly, the edge of the nitride film is preferably larger than the edge of the data line by 0.1 to 2.2 μm on each side.
[0034]
According to such a configuration, it is meant that the width of the nitride film is suitably set with respect to the width of the data line, and the above-described effect of preventing damage to the data line is more reliably achieved. Become.
[0035]
In another aspect of the electro-optical device according to the present invention, the thickness of the nitride film is 3 to 100 nm.
[0036]
According to this aspect, it means that the thickness of the nitride film is suitably set, and it is possible to more effectively eliminate the above-described influence of the stress inside the nitride film.
[0037]
When the thickness of the nitride film is made relatively small as described above, the following operation and effect can be obtained. That is, when some components such as wiring and the like are formed on a substrate and an interlayer insulating film or the like is formed on a region where the components are formed and other regions, a so-called surface of the interlayer insulating film or the like is formed. Steps may occur. This is due to each component having a unique “height”. When such a step occurs, the coating of an alignment film, which is usually provided in an electro-optical device such as a liquid crystal display device, becomes non-uniform, or the rubbing treatment on the alignment film cannot be suitably performed. Problems will result, which will result in reduced image quality such as reduced contrast.
[0038]
However, in this embodiment, since the thickness of the nitride film is relatively small, such as about 3 to 100 nm, the above-described step can be suppressed to a low level, and a situation such as a decrease in contrast is caused. The possibility can be reduced.
[0039]
In another aspect of the electro-optical device of the present invention, another substrate opposing the substrate with an electro-optical material interposed therebetween, and formed on the other substrate so as to correspond in position to the scanning lines and the data lines. And a width of the nitride film is smaller than a width of the light shielding film.
[0040]
According to this aspect, the width of the nitride film is smaller than the width of the light shielding film. That is, when viewed in a plan view, the nitride film according to this embodiment has a form covered by the light-shielding film. Here, the light-shielding film is usually provided so as not to transmit light for the purpose of preventing confusion of light between pixels, improving image contrast, and the like. By forming the nitride film so as to be covered by the light-shielding film, it is possible to appropriately maintain the light transmittance of the entire electro-optical device.
[0041]
In this embodiment, the light-shielding film is formed on “another substrate”, but the present invention is not limited to such an embodiment. For example, instead of the light-shielding film according to the present embodiment, another light-shielding film provided on the substrate (not the “other substrate”) may be applicable. In this case, further, as described above, the TFT, the storage capacitor, the scanning line, the data line, and the like, and the interlayer insulating film that separates them, and the like, are formed on the substrate. Can be considered as constituting a part of the elements described above, and by being provided between the interlayer insulating films, it can be considered as constituting a so-called built-in light shielding film.
[0042]
Further, it is needless to say that this embodiment can be applied to an electro-optical device having both a light-shielding film provided on another substrate and another light-shielding film provided on the substrate.
[0043]
In this embodiment, particularly, the edge of the nitride film is preferably smaller than the edge of the light-shielding film by 1 μm or less on both sides thereof.
[0044]
According to such a configuration, the width of the nitride film is suitably set to the width of the light-shielding film, and the above-described operation and effect of maintaining the transmittance of the electro-optical device is more reliably achieved. The Rukoto.
[0045]
In another aspect of the electro-optical device of the present invention, another substrate opposing the substrate with an electro-optical material interposed therebetween, and formed on the other substrate so as to correspond in position to the scanning lines and the data lines. And a width of the nitride film is larger than a width of the light shielding film.
[0046]
According to this aspect, it is possible to reduce flicker appearing on the image. Although the exact reason is not clear, it is considered that the intrinsic refractive index of the nitride film refracts incident light passing by the side of the light-shielding film. That is, light incident on a relatively wide portion of the nitride film is refracted by the portion and changes its traveling path, and light that would otherwise have been incident on the thin film transistor is changed to somewhere else. It is thought that it will lead. Therefore, according to this aspect, it is possible to reduce the light incident on the thin film transistor, and it is considered that the light leakage current is reduced, and the flicker is thereby reduced.
[0047]
From the above viewpoint alone, it is considered that the larger the width of the nitride film is, the better. However, if the width is too large, the nitride film will cover the light transmitting region, and the entire electro-optical device will be damaged. The light transmittance of the image may be reduced, thereby deteriorating the image quality. Therefore, the extent to which the width of the nitride film is greater than the width of the light-shielding film is restricted from the viewpoint just described, and more specifically, one edge of the nitride film as viewed from one edge of the light-shielding film. It is considered preferable that the distance up to about 1.7 μm be reached.
[0048]
In addition, it is needless to say that the operation and effect according to this aspect are similarly exerted in the above-described aspect in which the width of the nitride film is made larger than the width of the data line. In this case, the light that is refracted in the above description is "light passing by the data line".
[0049]
In another aspect of the electro-optical device of the present invention, the nitride film is formed by a plasma CVD method.
[0050]
According to this aspect, for example, in order to secure high electrical conductivity, for example, it is possible to preferably form the nitride film according to the present invention on a data line often formed of aluminum or the like. This is because, since the melting point of aluminum is low, if a nitride film is formed by a process requiring a high-temperature environment, the data lines may be melted.
[0051]
However, in this embodiment, since the nitride film is formed by the plasma CVD method, this can be performed in a relatively low-temperature environment, and the above-described problem does not occur.
[0052]
According to another aspect of the invention, an electronic apparatus includes the above-described electro-optical device (including various aspects thereof).
[0053]
According to the electronic apparatus of the present invention, since the electronic apparatus includes the above-described electro-optical device, a projection display apparatus (liquid crystal projector) capable of continuously displaying a high-quality image for a relatively long period of time. Various electronic devices such as a liquid crystal television, a mobile phone, an electronic organizer, a word processor, a view finder type or a monitor direct view type video tape recorder, a workstation, a video phone, a POS terminal, and a touch panel can be realized.
[0054]
The operation and other advantages of the present invention will become more apparent from the embodiments explained below.
[0055]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the electro-optical device of the present invention is applied to a liquid crystal device.
[0056]
(Configuration in the pixel section)
First, the configuration of the pixel portion of the electro-optical device according to the first embodiment of the present invention will be described with reference to FIGS. Here, FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of the electro-optical device. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed. FIG. 3 is a cross-sectional view taken along line AA ′ of FIG. FIG. 5 is a sectional view taken along the line BB ′ of FIG. FIG. 4 is a schematic plan view showing the overall configuration of the nitride film according to the present embodiment formed on the TFT array substrate. In FIGS. 3 and 5, the scale of each layer and each member is made different so that each layer and each member has a size recognizable in the drawings.
[0057]
In FIG. 1, a plurality of pixels formed in a matrix forming an image display area of the electro-optical device according to the present embodiment are each formed with a pixel electrode 9a and a TFT 30 for controlling switching of the pixel electrode 9a. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. Good.
[0058]
Also, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulsed manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30. By closing the switch of the TFT 30, which is a switching element, for a predetermined period, the image signals S1, S2,... Write at a predetermined timing.
[0059]
The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal as an example of the electro-optical material via the pixel electrodes 9a are held for a certain period between the pixel electrodes 9a and the counter electrode formed on the counter substrate. The liquid crystal modulates light by changing the orientation and order of the molecular assembly depending on the applied voltage level, thereby enabling gray scale display. In the normally white mode, the transmittance for the incident light decreases according to the voltage applied in each pixel unit, and in the normally black mode, the light enters according to the voltage applied in each pixel unit Light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole.
[0060]
In order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The storage capacitor 70 is provided alongside the scanning line 3a, includes a fixed potential side capacitor electrode, and includes a capacitor line 300 fixed to a constant potential.
[0061]
Hereinafter, a more realistic configuration of the electro-optical device in which the above-described circuit operation is realized by the data line 6a, the scanning line 3a, the TFT 30, and the like will be described with reference to FIGS.
[0062]
First, as shown in FIG. 3, which is a cross-sectional view taken along the line AA ′ of FIG. 2, the electro-optical device according to the present embodiment includes a transparent TFT array substrate 10 and a transparent counter substrate 20 disposed to face the TFT array substrate. It has. The TFT array substrate 10 is made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate.
[0063]
As shown in FIG. 3, a pixel electrode 9a is provided on the TFT array substrate 10, and an alignment film 16 on which a predetermined alignment process such as a rubbing process is performed is provided above the pixel electrode 9a. The pixel electrode 9a is made of a transparent conductive film such as an ITO (Indium Tin Oxide) film. On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode 21. The counter electrode 21 is also made of a transparent conductive film such as an ITO film, for example, like the pixel electrode 9a. The alignment films 16 and 22 are made of, for example, a transparent organic film such as a polyimide film.
[0064]
An upper light-shielding film 23 is formed on the counter substrate 20 so as to sew a gap between pixel electrodes 9a arranged in a matrix, which will be described later. This includes, for example, a metal containing at least one of the opaque high melting point metals Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), and Pd (palladium). It is composed of simple substance, alloy, metal silicide, etc. Alternatively, it may be made of another metal such as Al (aluminum) and Ag (silver). The aperture region is defined by such an upper light-shielding film 23, but in the place where the upper light-shielding film 23 is present, light cannot pass through, and confusion of light between pixels is prevented. This makes it possible to improve the contrast of the image.
[0065]
On the other hand, in FIG. 2, a plurality of the pixel electrodes 9a are provided in a matrix on the TFT array substrate 10 (the outline is indicated by a dotted line portion 9a '), and the pixel electrodes 9a are respectively provided on the vertical and horizontal boundaries of the pixel electrode 9a. The data line 6a and the scanning line 3a are provided along.
[0066]
Particularly, in the present embodiment, a nitride film such as a SiN film or a SiON film is formed on and along the data line 6a formed of a metal film or an alloy film such as an aluminum film. 401 is provided. However, in the nitride film 401 according to the present embodiment, in addition to the data lines 6a, the pixel electrodes 9a arranged in a matrix and the data lines 6a and the scanning lines 3a arranged so as to sew these gaps are formed. The area around the image display area 10a defined as an area is also formed in a square shape.
[0067]
As described above, the nitride film 401 according to the present embodiment is formed on the TFT array substrate 10 in the overall shape as schematically shown in FIG. In FIG. 4, the nitride film 401 existing around the image display area 10a is used to prevent moisture from entering a CMOS (Complementary MOS) type TFT constituting the data line driving circuit 101 and the scanning line driving circuit 104 described later. It greatly contributes (see FIG. 10). However, since nitride is expected to have a lower etching rate in dry etching or the like than other general materials, the nitride film 401 is formed in a region around the image display region 10a. If it is necessary to form a contact hole or the like in the region, a hole corresponding to the position of the contact hole may be formed in the nitride film 401 in advance. If this is performed at the same time as performing the patterning as shown in FIG. 4, this contributes to simplification of the manufacturing process.
[0068]
In the nitride film 401, the nitride film 401 existing on the data line 6a is formed to be slightly larger than the width of the data line 6a as shown in FIG. The width of the film 23 is equal to or slightly smaller than the width of the film 23. Incidentally, regarding the relationship between the width W1 of the nitride film 401 and the width W2 of the data line 6a, in the present embodiment, in particular, the former W1 is larger than the latter W2 by 0.1 to 0.5 μm on each side (that is, (W1−W2) /2=0.1 to 0.5 μm).
[0069]
As described above, the data lines 6a are formed so as to be covered with the nitride film 401 and the nitride film 401 is formed so as to be covered with the upper light-shielding film 23 when viewed in a plan view from the counter substrate 20 side. .
[0070]
In the present embodiment, in addition to the above-described upper light-shielding film 23, as shown in FIG. 3, a lower light-shielding film is provided on the TFT array substrate 10 and below the TFT 30 as a component for defining the opening region. 11a is provided. The lower light-shielding film 11a is patterned in a lattice pattern, which also defines an opening area of each pixel. The lower light-shielding film 11a extends from the image display area to the periphery thereof in order to prevent the potential fluctuation from adversely affecting the TFT 30 as in the case of the capacitance line 300 described later. It is good to connect to a constant potential source.
[0071]
In addition, the definition of the opening region can be realized by the data line 6a and the capacitor line 300 if the later-described capacitor line 300 formed to intersect the data line 6a is made of a light-shielding material. Is possible. The members such as the lower light-shielding film 11a or the data lines 6a and the capacitance lines 300 formed on the TFT array substrate 10 and between the interlayer insulating films on the substrate 10 are referred to as "built-in light-shielding films". It can be called.
[0072]
In this embodiment, in particular, the width of the lower light-shielding film 11a is formed to be the same as the width of the above-described upper light-shielding film 23 (that is, both have the same width W3). As a result, the width W1 of the nitride film 401 is equal to or smaller than the width W3 of the lower light-shielding film 11a. Therefore, the nitride film 401 according to the present embodiment exists only in the non-opening region.
[0073]
In the present embodiment, as described above, the width of the lower light-shielding film 11a is made equal to the width of the upper light-shielding film 23, but the present invention is not limited to such an embodiment. is not. For example, the width of the lower light shielding film 11a may be smaller than the width of the upper light shielding film 23. In this way, it is possible to prevent the light entering the electro-optical device obliquely from being reflected or the like beforehand, and it is possible to further improve the light shielding performance for the TFT 30.
[0074]
When the above configurations are collectively illustrated, the electro-optical device according to the present embodiment has a structure as shown in FIG. 5, which is a cross-sectional view taken along line BB ′ of FIG. In FIG. 5, as described above, the width W1 of the nitride film 401 according to the present embodiment is larger than the width W2 of the data line 6a, and the widths of the upper light-shielding film 23 and the lower light-shielding film 11a. It is formed equal to or smaller than W3. This means that the edge of the nitride film 401 does not reach the light transmitting region. In FIG. 5, dashed lines defining light transmitting regions and regions other than the light transmitting regions are drawn at positions on the left and right sides in the figure corresponding to the width W3 of the upper light shielding film 23 and the lower light shielding film 11a. Does not exist further to the right (or left) beyond the dashed line on the right (or left). That is, the edge of the nitride film 401 does not reach the light transmitting region.
[0075]
The above-described nitride film 401 can be suitably formed by, for example, a plasma CVD method or the like. If the nitride film 401 is formed by such a method capable of forming a film under a low-temperature environment, the data line 6a may be formed of a low-melting-point metal such as aluminum without being melted. It is possible to form the nitride film 401 on the substrate. However, in the present invention, it goes without saying that the nitride film 401 may be formed by other methods.
[0076]
The thickness of the nitride film 401 is, for example, about 3 to 100 nm, more preferably about 3 to 30 nm.
[0077]
Returning to FIG. 2, the scanning line 3a is arranged so as to face a channel region 1a 'indicated by a hatched region in the semiconductor layer 1a, which rises to the right in the figure. The scanning line 3a functions as a gate electrode. That is, pixel switching TFTs 30 are provided at the intersections of the scanning lines 3a and the data lines 6a, in which the main lines of the scanning lines 3a are opposed to each other as gate electrodes in the channel region 1a '.
[0078]
As shown in FIG. 3, the TFT 30 has an LDD (Lightly Doped Drain) structure, and its component is a scanning line 3a functioning as a gate electrode as described above, for example, a scanning line made of a polysilicon film. A channel region 1a 'of the semiconductor layer 1a in which a channel is formed by an electric field from 3a, an insulating film 2 including a gate insulating film for insulating the scanning line 3a from the semiconductor layer 1a, a lightly doped source region 1b in the semiconductor layer 1a, A high concentration drain region 1c, a high concentration source region 1d and a high concentration drain region 1e are provided.
[0079]
The TFT 30 preferably has an LDD structure as shown in FIG. 3, but may have an offset structure in which impurities are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c, or a part of the scanning line 3a. A self-aligned TFT in which a high concentration source region and a high concentration drain region are formed in a self-aligned manner by implanting impurities at a high concentration using a gate electrode formed of as a mask. Further, in the present embodiment, a single gate structure in which only one gate electrode of the pixel switching TFT 30 is disposed between the high-concentration source region 1d and the high-concentration drain region 1e has been described. Electrodes may be arranged. When a TFT is formed with a dual gate or triple gate or more as described above, a leak current at a junction between a channel and a source / drain region can be prevented, and a current in an off state can be reduced. Further, the semiconductor layer 1a constituting the TFT 30 may be a non-single-crystal layer or a single-crystal layer. For forming the single crystal layer, a known method such as a bonding method can be used. By using the semiconductor layer 1a as a single crystal layer, the performance of peripheral circuits in particular can be improved.
[0080]
On the other hand, in FIG. 3, the storage capacitor 70 is composed of a relay layer 71 serving as a pixel potential side capacitor electrode connected to the high-concentration drain region 1 e and the pixel electrode 9 a of the TFT 30, and a capacitor line 300 serving as a fixed potential side capacitor electrode. A part of them is formed by being opposed to each other with a dielectric film 75 interposed therebetween. According to the storage capacitor 70, the potential holding characteristic of the pixel electrode 9a can be significantly improved.
[0081]
The relay layer 71 is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitance electrode. However, the relay layer 71 may be formed of a single-layer film or a multilayer film containing a metal or an alloy, similarly to the capacitance line 300 described later. The relay layer 71 has a function of relaying the pixel electrode 9a and the high-concentration drain region 1e of the TFT 30 via the contact holes 83 and 85, in addition to the function as the pixel potential side capacitor electrode.
[0082]
By using the relay layer 71 in this way, even if the interlayer distance is as long as, for example, about 2000 nm, it is possible to avoid the technical difficulty of connecting the two with one contact hole and to connect two or more relatively small-diameter series. Both can be satisfactorily connected with a simple contact hole, and the pixel aperture ratio can be increased. It also helps to prevent penetration of the etching when opening the contact hole.
[0083]
The capacitance line 300 is made of, for example, a conductive film containing a metal or an alloy and functions as a fixed potential side capacitance electrode. When viewed in plan, the capacitance line 300 is formed so as to overlap the formation region of the scanning line 3a, as shown in FIG. More specifically, the capacitance line 300 includes a main line portion extending along the scanning line 3a, a protrusion protruding upward along the data line 6a from each location intersecting the data line 6a in the figure, and a contact hole. A portion corresponding to 85 is provided with a constricted portion slightly constricted. Of these, the protruding portion contributes to an increase in the formation area of the storage capacitor 70 by utilizing the area above the scanning line 3a and the area below the data line 6a.
[0084]
Such a capacitance line 300 is preferably formed of a conductive light-shielding film containing a high-melting point metal, and functions as a fixed-potential-side capacitance electrode of the storage capacitor 70 and a light-shielding layer that shields the TFT 30 from incident light above the TFT 30. Has the function as Further, as described above, if the capacitor line 300 is configured in this manner, the capacitor line 300 can also function as a built-in light-shielding film that defines an opening region.
[0085]
The capacitance line 300 preferably extends from the image display area 10a where the pixel electrode 9a is arranged to the periphery thereof, and is electrically connected to a constant potential source to have a fixed potential. Such a constant potential source may be a constant potential source of a positive power supply or a negative power supply supplied to the data line driving circuit 101, or may be a constant potential supplied to the counter electrode 21 of the counter substrate 20.
[0086]
As shown in FIG. 3, the dielectric film 75 is, for example, a relatively thin HTO (High Temperature Oxide) film having a thickness of about 5 to 200 nm, a silicon oxide film such as an LTO (Low Temperature Oxide) film, or a silicon nitride film. Consists of From the viewpoint of increasing the storage capacitance 70, the thinner the dielectric film 75 is, the better the reliability of the film can be obtained.
[0087]
2 and 3, in addition to the above, a base insulating film 12 is provided below the TFT 30. The base insulating film 12 has a function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, and is formed over the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 is roughened at the time of polishing the surface and dirt remaining after cleaning. It has a function of preventing a change in the characteristics of the pixel switching TFT 30.
[0088]
On the scanning line 3a, a first interlayer insulating film 41 having a contact hole 81 leading to the high-concentration source region 1d and a contact hole 83 leading to the high-concentration drain region 1e is formed.
[0089]
A relay layer 71 and a capacitor line 300 are formed on the first interlayer insulating film 41, and a contact hole 81 leading to the high-concentration source region 1d and a contact hole 85 leading to the relay layer 71 are formed on these. A perforated second interlayer insulating film 42 is formed.
[0090]
In this embodiment, the first interlayer insulating film 41 is baked at about 1000 ° C. to activate the ions implanted into the semiconductor layer 1a and the polysilicon film forming the scanning line 3a. You may. On the other hand, by not performing such sintering on the second interlayer insulating film 42, stress generated near the interface of the capacitance line 300 may be reduced.
[0091]
The data line 6a and the nitride film 401 according to the present embodiment are formed on the second interlayer insulating film 42, and the third interlayer insulating film in which a contact hole 85 leading to the relay layer 71 is formed thereon. 43 are formed.
[0092]
The surface of the third interlayer insulating film 43 is flattened by a CMP (Chemical Mechanical Polishing) process or the like, and reduces the alignment failure of the liquid crystal layer 50 due to a step due to various wirings, elements, and the like existing below the surface. However, instead of or in addition to performing the flattening process on the third interlayer insulating film 43, the TFT array substrate 10, the underlying insulating film 12, the first interlayer insulating film 41, and the second interlayer insulating film 42 A flattening process may be performed by digging a groove in at least one of them and burying a wiring such as the data line 6a or a TFT 30 or the like.
[0093]
In the electro-optical device according to the present embodiment having such a configuration, the following operation and effect can be obtained due to the existence of the nitride film 401.
[0094]
First, the provision of the nitride film 401 around the image display region 10a and on the data lines 6a prevents moisture from entering the semiconductor layer 1a constituting the TFT 30 or the insulating film 2 including the gate insulating film. Can be prevented. Therefore, it is possible to avoid a situation in which the threshold voltage Vth of the TFT 30 rises in a relatively short period of time and the control becomes impossible, as conventionally observed.
[0095]
In the present embodiment, the nitride film 401 has a shape that exists only on the data line 6a and does not reach the light transmission region, except for the film formed around the image display region 10a. (See FIG. 5), it is possible to avoid a situation where the transmittance of the entire electro-optical device is reduced despite the provision of the nitride film 401. Therefore, according to the present embodiment, a brighter high-quality image can be displayed.
[0096]
Further, for the same reason, the nitride film 401 itself is broken by its internal stress, and the stress acts on the outside, so that the nitride film 401 exists around the nitride film 401, for example, the third interlayer insulating film 43 or the like. There is no possibility that cracks will occur. That is, since the nitride film 401 exists only on the data line 6a, a large internal stress does not concentrate. This is clearer assuming that the nitride film is provided on the entire surface of the TFT array substrate 10.
[0097]
Moreover, in the present embodiment, even in such a form, the above-described operation and effect of preventing moisture penetration can be sufficiently obtained. The inventor of the present application can extend the life of the nitride film 401 having a thickness of 3 to 30 nm to at least three times that of the conventional electro-optical device even when the nitride film 401 is formed only on the data line 6a. Make sure that.
[0098]
Further, as shown in FIG. 2 or FIG. 5, the nitride film 401 in this embodiment is formed to have a width W1 larger than the width W2 of the data line 6a (W1> W2). This makes it possible to reduce damage to the data line 6a during the manufacturing process. As described above, the damage in the manufacturing process is typically considered to be damage caused by an etching process required when using the photolithography method. In such a case, the operation of the electro-optical device may be affected by generating unnecessary erosion or the like on the data line 6a by the etching.
[0099]
However, in the present embodiment, as described above, since the relationship of (width W1 of nitride film 401)> (width W2 of data line 6a) is satisfied, the damage given by the above-described etching is The edge of the nitride film 401 can take charge. Therefore, according to the present embodiment, it is possible to provide an electro-optical device that can operate favorably without causing erosion or the like relating to the data line 6a.
[0100]
FIG. 6 shows an experimental result that proves such a situation. Here, FIG. 6 shows that, after an original film of a nitride film is once formed on the entire surface of the TFT array substrate 10, various patterns having different shapes are performed by using a photolithography method. It is a graph which shows what happened. Note that the “defective rate” as used herein refers to the proportion of the data line 6a that did not operate normally due to a break in the data line 6a as a result of experimental production of the electro-optical device. Further, “various patterning with different shapes” specifically means a value of ((width W1 of nitride film 401) − (width W2 of data line 6a)) / 2 (hereinafter referred to as “projection value”). , And is represented by the symbol “P.” That is, it means three types of patterning where the protrusion value P = (W1−W2) / 2) is P = 0.45 μm, 2.17 μm, and 10 μm.
[0101]
As can be seen from this figure, the defect rate is shown as a result of patterning the nitride film on the entire surface by only leaving the square-shaped nitride film around (leftmost in FIG. 6). Compared with reaching nearly 20%, the result of patterning the nitride film 401 while leaving the nitride film 401 on the data line 6a and having a width W1 larger than the width W2 of the data line 6a indicates that The defect rate is extremely small.
[0102]
As described above, by setting W1> W2, it is possible to provide an electro-optical device that can be expected to operate accurately.
[0103]
Incidentally, in the above-described embodiment, the widths W1 and W2 are adjusted so that the protrusion value P becomes 0.1 to 0.5 μm, but FIG. 7 shows the basis thereof. Here, FIG. 7 is a graph showing how the degree of flicker appearing on the image displayed by the completed electro-optical device changes according to the change of the protrusion value P.
[0104]
As shown in this figure, when the nitride film 401 according to the present embodiment is formed as compared with the conventional example (on the left axis in FIG. 7), that is, when the nitride film does not exist on the data line 6a, It can be seen that flicker on the image is reduced. It can also be seen that the degree of the reduction increases as the protrusion value P increases (that is, the flicker decreases as the protrusion value P increases).
[0105]
Although the exact reason is not clear, it is considered that the intrinsic refractive index of the nitride film 401 is to refract incident light passing beside the data line 6a. That is, the light incident on the relatively wide portion of the nitride film 401 is refracted by the portion and changes its traveling path, and the light that should have been incident on the TFT 30 is changed to another place. It is thought that it will lead to. Then, the light incident on the TFT 30 is reduced, so that it is considered that the light leakage current is reduced, thereby reducing the flicker.
[0106]
From FIG. 7, it can be seen that the effect of reducing flicker as described above can be obtained relatively sufficiently by providing a mode in which the protrusion value P is provided only slightly. From the above, it is preferable that the lower limit of the protrusion value P is basically set to be as small as possible (see FIG. 7), and more specifically, 0.1 μm It can be seen that it is preferable to set the constraint of the degree or more. By the way, if the protrusion value P is set at the smallest possible lower limit, the nitride film 401 will reach the light transmitting region even if an assembly error or the like occurs at the time of manufacturing or assembling the electro-optical device. It is also possible to obtain the advantage that there is no need to worry about
[0107]
On the other hand, as for the upper limit of the protrusion value P, as shown in FIG. 6, it can be read that the flicker decreases as the protrusion value P increases, so that no special restriction is required. Seem. However, it is not necessary to blindly increase the protrusion value P. This is because, as is apparent from FIG. 5, if the protrusion value P is too large, the edge of the nitride film 401 will extend beyond the one-dot chain line shown in FIG. This is because there is a possibility that the overall transmittance is reduced.
[0108]
However, in the present invention, it is not necessary to restrict the upper limit of the width W1 of the nitride film 401 only by formally preventing the nitride film 401 from reaching the light transmitting region. For example, in some cases, as shown in FIG. 8, a form in which the nitride film 401 reaches the light transmitting region may be adopted. Here, FIG. 8 is a view having the same effect as FIG. 5 and shows a mode in which the width W1 ′ of the nitride film 401 ′ is formed to be larger than the width W3 of the upper light shielding film 23. In FIG. 8, components denoted by the same reference numerals as those in FIG. 5 are completely the same as the configuration shown in FIG. 5, and the description thereof will not be repeated.
[0109]
As shown in FIG. 8, when the width W1 'of the nitride film 401' is larger than the width W3 of the upper light-shielding film 23, the nitride film 401 'actually reaches the light transmitting region. However, as long as the size of W3-W2 does not become very large, a range that does not substantially affect the light transmittance can be considered, and such a form is also possible. In such a case, as already described with reference to FIG. 7, the effect of reducing flicker on an image can be enjoyed more than in the above-described embodiment. You can even say that you have an advantage.
[0110]
As described above, the upper limit of the width W1 of the nitride film 401 takes into account the relationship between avoiding a decrease in light transmittance and reducing flicker on an image (the two are considered to be in a trade-off relationship). You can decide by paying. More specifically, if the emphasis is placed on the point of flicker reduction on the image, the projection value P may be set to be as large as about 2.2 μm, and the emphasis is on avoiding a decrease in light transmittance. If so, it is considered appropriate to adopt a form in which the protrusion value P is set to be as small as about 0.5 μm. In the former case, generally, the width W1 of the nitride film 401 is larger than the width W3 of the upper light-shielding film 23, and therefore, a part of the nitride film 401 slightly reaches the light transmitting region (see FIG. 8), in the latter case, the nitride film 401 does not reach the light transmitting region (see FIG. 5).
[0111]
However, the upper limit of the protrusion value P is essentially determined by the size of the pixel electrode 9a, the width of the scanning line 3a, and other various components in addition to the nitride film 401 and the data line 6a. is there. Therefore, more generally speaking, when emphasis is placed on reducing flicker on an image, the width W1 of the nitride film 401 is preferably larger than the width W3 of the upper light-shielding film 23. If the emphasis is placed on preventing the transmittance from decreasing, it can be said that the nitride film 401 only needs to satisfy at least the criterion that the nitride film 401 be formed in the region excluding the light transmitting region. In the case where the latter case is particularly emphasized, the relationship between the nitride film 401 and the upper light-shielding film 23 is focused on, not the relationship between the nitride film 401 and the data line 6a, and the former edge is larger than the latter edge. It is preferable to provide a restriction such that the thickness is reduced within 1 μm.
[0112]
After all, taking into account all of the above, including the effect of avoiding the etching damage to the data line 6a and the effect of the above, the protrusion value P is more preferably about 0.45 to 0.55 μm. Then it is considered better.
[0113]
Further, in this embodiment, since the thickness of the nitride film 401 is about 3 to 100 nm, the following operation and effect can be obtained. In other words, according to the nitride film 401 having such a relatively small thickness, it is possible to reduce the level difference caused on the surface of the interlayer insulating film or the like formed on the nitride film 401 due to this. Thus, the image quality is not lowered by lowering the contrast. In this regard, in the present embodiment, as described above, since the surface of the third interlayer insulating film 43 has been subjected to the CMP process, it is possible to make a flat surface appear. However, in view of the above-mentioned circumstances, it means that a relatively flat surface can be obtained even if the CMP process or the like is not performed.
[0114]
Note that, in the above embodiment, the form in which the nitride film 401 exists only around the image display area 10a and on the data line 6a has been described, but the present invention is not limited to such a form. For example, as shown in FIG. 9 to the same effect as FIG. 4, in the direction in which the scanning line 3a extends, the nitride film 401 is formed as the same film at the same time as the formation of the nitride film 401 in the data line 6a direction. Such a form may be used. According to such an embodiment, it is considered that the effect of preventing moisture from entering the TFT 30 can be more reliably enjoyed. Incidentally, even in such a case, it is of course possible to adopt a form in which the edge of the nitride film 401 does not enter the light transmission region (see FIG. 5) or a form in which the edge of the nitride film 401 enters (see FIG. 8). .
[0115]
(Overall configuration of electro-optical device)
Hereinafter, the overall configuration of the electro-optical device according to the present embodiment configured as described above will be described with reference to FIGS. FIG. 10 is a plan view of the TFT array substrate together with the components formed thereon as viewed from the counter substrate 20, and FIG. 11 is a cross-sectional view taken along the line HH 'of FIG.
[0116]
10 and 11, in the electro-optical device according to the present embodiment, the TFT array substrate 10 and the opposing substrate 20 are arranged to face each other. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the opposing substrate 20, and the TFT array substrate 10 and the opposing substrate 20 are separated from each other by a seal provided in a sealing area located around the image display area 10a. The members 52 are bonded to each other.
[0117]
The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like, and is hardened by ultraviolet light, heating, or the like in order to bond the two substrates. In addition, if the electro-optical device according to the present embodiment is applied to a liquid crystal device that performs a small-sized enlarged display such as a projector, the distance between the two substrates (the distance between the substrates) A gap material (spacer) such as glass fiber or glass beads for setting the gap to a predetermined value is dispersed. Alternatively, such a gap material may be included in the liquid crystal layer 50 if the electro-optical device is applied to a large-sized liquid crystal device such as a liquid crystal display or a liquid crystal television that displays images at the same magnification.
[0118]
In a region outside the sealing material 52, a data line driving circuit 101 for driving the data line 6 a by supplying an image signal to the data line 6 a at a predetermined timing and an external circuit connection terminal 102 are connected to one side of the TFT array substrate 10. The scanning line driving circuit 104 that drives the scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to this one side. I have.
[0119]
If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area 10a.
[0120]
On one remaining side of the TFT array substrate 10, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area 10a are provided. In at least one of the corners of the counter substrate 20, a conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20 is provided.
[0121]
In FIG. 11, on the TFT array substrate 10, an alignment film is formed on the pixel electrode 9a after the TFT for pixel switching and the wiring such as the scanning line and the data line are formed. On the other hand, on the counter substrate 20, an alignment film is formed on the uppermost layer in addition to the counter electrode 21. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.
[0122]
Note that, on the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to the plurality of data lines 6a at a predetermined timing, a plurality of data lines 6a, a precharge circuit for supplying a precharge signal of a predetermined voltage level prior to the image signal, an inspection circuit for inspecting the quality, defects, and the like of the electro-optical device during manufacturing or shipping are formed. Is also good.
[0123]
Further, in each of the above-described embodiments, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, the driving LSI mounted on a TAB (Tape Automated Bonding) substrate is provided with a TFT. The connection may be made electrically and mechanically via an anisotropic conductive film provided on the periphery of the array substrate 10. For example, a TN (Twisted Nematic) mode, a VA (Vertically Aligned) mode, and a PDLC (Polymer Dispersed Liquid Crystal) are provided on the side of the opposite substrate 20 where the projected light is incident and on the side where the emitted light of the TFT array substrate 10 is emitted, respectively. A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as a mode and a normally white mode / normally black mode.
[0124]
Further, as the electro-optical device, in addition to the liquid crystal device, an electro-optical device using an organic EL element or an inorganic EL element, an electrophoretic device, or the like using a thin film transistor can be applied.
[0125]
(Electronics)
Next, an overall configuration, particularly an optical configuration, of an embodiment of a projection type color display device as an example of an electronic apparatus using the electro-optical device described above in detail as a light valve will be described. FIG. 12 is a schematic cross-sectional view of the projection type color display device.
[0126]
In FIG. 12, a liquid crystal projector 1100, which is an example of a projection type color display device according to the present embodiment, prepares three liquid crystal modules each including a liquid crystal device in which a driving circuit is mounted on a TFT array substrate, and each of them has a light valve for RGB. The projector is configured as a projector used as 100R, 100G, and 100B. In the liquid crystal projector 1100, when projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, three mirrors 1106 and two dichroic mirrors 1108 emit light components R, G and R corresponding to the three primary colors RGB. B, and are led to light valves 100R, 100G, and 100B corresponding to each color. At this time, in particular, the B light is guided through a relay lens system 1121 including an entrance lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path. The light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B are combined again by the dichroic prism 1112, and then projected as a color image on the screen 1120 via the projection lens 1114.
[0127]
The present invention is not limited to the above-described embodiment, and can be appropriately changed within the scope of the invention or the idea that can be read from the entirety of the claims and the specification, and an electro-optical device with such a change. And electronic devices are also included in the technical scope of the present invention.
[Brief description of the drawings]
FIG. 1 is a circuit diagram showing an equivalent circuit such as various elements and wiring provided in a plurality of pixels in a matrix forming an image display area in an electro-optical device according to an embodiment of the present invention.
FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the embodiment of the present invention.
FIG. 3 is a sectional view taken along line AA ′ of FIG. 2;
FIG. 4 is a plan view schematically showing the overall configuration of a nitride film according to the embodiment on a TFT array substrate.
FIG. 5 is a sectional view taken along the line BB ′ of FIG. 2;
FIG. 6 is a graph showing a relationship between various patterning results of different shapes and a defect rate of an electro-optical device prototyped according to the result.
FIG. 7 is a graph showing a relationship between a protrusion value and a degree of flicker on an image.
FIG. 8 is a cross-sectional view having the same concept as in FIG. 5 and shows a different aspect in that a width of a nitride film is larger than a width of an upper light-shielding film.
FIG. 9 is a plan view having the same concept as FIG. 4 and schematically showing an overall configuration of a nitride film having a form different from that of FIG. 4;
FIG. 10 is a plan view of a TFT array substrate in an electro-optical device according to an embodiment of the present invention, together with components formed thereon, viewed from a counter substrate side.
FIG. 11 is a sectional view taken along line HH ′ of FIG. 10;
FIG. 12 is a schematic sectional view showing a color liquid crystal projector as an example of a projection type color display device which is an embodiment of the electronic apparatus of the invention.
[Explanation of symbols]
1a: Semiconductor layer
2. Insulating film (including gate insulating film)
3a: scanning line
6a Data line
10 ... TFT array substrate
10a: Image display area
11a: Lower light-shielding film
20: Counter substrate
23 Upper light shielding film
30 ... TFT
70 ... Storage capacity
300 ... Capacitance line
401, 401 '... nitride film
W1, W1 ': width of nitride film
W2: width of data line
W3: width of upper or lower light-shielding film

Claims (13)

On the substrate,
A thin film transistor provided corresponding to the intersection of the scanning line and the data line and a pixel electrode provided corresponding to the thin film transistor,
An electro-optical device comprising at least a nitride film formed on a surface of the data line. The pixel electrodes are arranged in a matrix, and the scanning lines and the data lines are formed in a shape corresponding to the matrix along a direction crossing each other,
2. The electro-optical device according to claim 1, wherein the nitride film is formed on at least the data line surface and the scan line. 3. The electro-optical device according to claim 1, wherein the nitride film is formed around an image display area defined as an area where the pixel electrode, the scan line, and the data line are formed. apparatus. 4. The electro-optical device according to claim 3, wherein the nitride film is formed only on the data line in addition to the periphery of the image display area. The electro-optical device according to claim 1, wherein the nitride film is formed in a region on the substrate excluding a light transmitting region. The electro-optical device according to claim 1, wherein a width of the nitride film formed on the data line is larger than a width of the data line. 7. The electro-optical device according to claim 6, wherein an edge of the nitride film is larger than an edge of the data line by 0.1 to 2.2 [mu] m on each side. The electro-optical device according to any one of claims 1 to 7, wherein the thickness of the nitride film is 3 to 100 nm. Another substrate facing the substrate with an electro-optical material interposed therebetween, further comprising a light-shielding film formed on the other substrate so as to correspond to the scanning lines and the data lines,
The electro-optical device according to claim 1, wherein a width of the nitride film is smaller than a width of the light shielding film. 10. The electro-optical device according to claim 9, wherein an edge of the nitride film is formed smaller than an edge of the light-shielding film by 1 μm or less on both sides thereof. Another substrate facing the substrate with an electro-optical material interposed therebetween, further comprising a light-shielding film formed on the other substrate so as to correspond to the scanning lines and the data lines,
9. The electro-optical device according to claim 1, wherein a width of the nitride film is larger than a width of the light shielding film. 10. The electro-optical device according to claim 1, wherein the nitride film is formed by a plasma CVD method. An electronic apparatus comprising the electro-optical device according to claim 1.

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