JP2004040024A - Vapor phase thin film manufacturing equipment - Google Patents

Abstract

A vapor phase thin film manufacturing apparatus capable of accurately measuring a temperature of a semiconductor substrate is provided.
A susceptor (18) for holding and rotating a semiconductor substrate (W) and a semiconductor substrate (W) held on the susceptor (18) in a vapor phase thin film manufacturing apparatus. A heater (14) and gas introduction means (26) for introducing a predetermined gas into a first space (16) between the semiconductor substrate (W) held by the susceptor (18) and the heater (14). And a thermometer (22) provided on the side opposite to the heater (14) for measuring the temperature of the semiconductor substrate (W) from the second space (20) into which the gas (A) is not introduced.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a vapor phase thin film manufacturing apparatus used when forming a thin film on a semiconductor substrate.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, there has been known an apparatus that raises the temperature of a semiconductor substrate, feeds a necessary raw material gas thereto, and forms a thin film on the substrate.
[0003]
Methods for increasing the temperature of the semiconductor substrate include resistance heating, lamp heating, and high-frequency induction heating.
[0004]
Broadly classified according to the substrate setting method, there are a cold wall type for heating only the substrate as much as possible and a hot wall type for heating the entire periphery of the substrate.
[0005]
In the hot wall type, since the entire periphery of the substrate is heated, there is no major restriction on the method of setting the substrate, but the method of introducing the gas is restricted due to the heating of the outer wall. The substrate temperature is estimated by measuring with a thermocouple provided in the furnace soot, or by measuring with a radiation thermometer provided on the outer wall of the heating.
[0006]
In the cold wall type, heating is often performed from the side on which the substrate is set (the side opposite to the thin film growth surface). Alternatively, the thin film growth surface may be directed downward (down face), and a heating means may be provided so as to face the thin film growth surface. However, the side opposite to the thin film growth surface is covered with a heat insulating material or the like.
[0007]
The temperature of the substrate is estimated from a value measured by a radiation thermometer in the heating section or from a value measured by a thermocouple in the furnace soot (between the heater and the substrate).
[0008]
There is also a method of measuring the substrate surface (thin film growth surface) with a radiation thermometer.
[0009]
[Problems to be solved by the invention]
In the prior art, the substrate temperature cannot be measured accurately. This is because, as described above, the measurement at the soaking body in the furnace or at the outer wall of the heating is not accurate because the measurement temperature is approximate.
[0010]
In the method of measuring the substrate surface (thin film growth surface) with a radiation thermometer, even when the same material is grown such that a Si film is grown on a Si substrate, it is affected by the gas on the substrate. If the measurement temperature is not accurate and the compound is grown to grow another material as a thin film, or if the inside of the furnace is contaminated, accurate temperature measurement becomes impossible.
[0011]
In the case of such a measuring method, for example, when a plurality of gases are introduced during compound growth, the inside of the furnace is severely contaminated by precipitation at a high temperature portion in the furnace. In addition, particles due to curling of gas on the substrate may cause contamination.
[0012]
SUMMARY OF THE INVENTION It is an object of the present invention to provide a vapor phase thin film manufacturing apparatus capable of accurately measuring the temperature of a semiconductor substrate.
[0013]
[Means for Solving the Problems]
Examples of the solution according to the present invention are as follows.
[0014]
(1) A susceptor (18) which is formed in a hollow and holds and rotates the semiconductor substrate (W) at the upper or lower part thereof, and a semiconductor substrate (W) held by the susceptor (18). A heater (14) for heating, and a gas introducing means for introducing a predetermined gas into a first space (16) between the semiconductor substrate (W) held by the susceptor (18) and the heater (14). (26) and a thermometer (22) provided on the side opposite to the heater (14) for measuring the temperature of the semiconductor substrate (W) from the second space (20) into which gas is not introduced. An apparatus for producing a vapor phase thin film, comprising:
[0015]
(2) The gas phase thin film manufacturing apparatus described above, wherein the gas flows in a direction substantially parallel to the surface of the semiconductor substrate (W).
[0016]
(3) The gas phase as described above, wherein the gas flows vertically toward the surface of the semiconductor substrate (W) or at an angle close thereto and then flows off along the surface of the semiconductor substrate (W). Thin film manufacturing equipment.
[0017]
(4) A heater (141) is provided to face the thin film growth surface of the semiconductor substrate (W), and the surface of the semiconductor substrate (W) opposite to the thin film growth surface is measured by a thermometer (22). An apparatus for producing a vapor-phase thin film as described above, characterized in that:
[0018]
(5) When introducing the gas, the source gas (A) and the purge gas (B) can be introduced, and the source gas inlet (26a) for introducing the source gas (A) and the purge gas (B) are introduced. The gas-phase thin-film manufacturing apparatus as described above, wherein purge gas introduction ports (26b, 26c) are provided for controlling the flow rate of the source gas (A) and the purge gas (B).
[0019]
(6) The raw material gas (A) is composed of a plurality of types of raw materials, a raw material gas inlet is provided for each raw material gas, and each raw material gas can be separately introduced. The above-mentioned vapor phase thin film manufacturing apparatus.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
In a preferred embodiment according to the present invention, the susceptor for holding and rotating the semiconductor substrate is formed, for example, in a cylindrical shape, and a cylindrical space is formed therein, and the second space is used as the second space. It is configured. The semiconductor substrate is held horizontally on the upper part (upper end) or lower part (lower end) of the susceptor. As a method of rotating and holding the semiconductor substrate by the susceptor, a conventionally known method can be used.
[0021]
As a heater for heating the semiconductor substrate, various heating methods can be used in addition to a high-frequency induction heating method, a resistance heating method, and a lamp heating method.
[0022]
Preferably, the material gas is caused to flow in a space on one surface (for example, upper surface) side of the semiconductor substrate, and the material gas is not flowed in the space on the other surface (for example, lower surface) side, and the material gas is not flowed. The temperature of the semiconductor substrate is measured from the space by using a thermometer.
[0023]
For example, a source gas is introduced into a first space between the heater and the semiconductor substrate. At that time, the source gas may be introduced into the first space together with the purge gas. In this case, it is preferable to introduce a source gas along the semiconductor substrate and introduce a purge gas along the heater to prevent contamination of the heater.
[0024]
At least the source gas is prevented from being introduced into the second space located between the semiconductor substrate and the thermometer. Preferably, the second space is configured as an internal space of the susceptor, and the temperature of the semiconductor substrate is measured from the internal space of the susceptor. In this case, the susceptor is preferably formed in a cylindrical shape.
[0025]
Preferably, a heater is provided to face the thin film growth surface of the semiconductor substrate. This makes it possible to measure the temperature from the side opposite to the thin film growth surface of the semiconductor substrate (the back side of the semiconductor substrate).
[0026]
In this specification, a side on which a thin film is grown is referred to as a front side for convenience of explanation.
[0027]
【Example】
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0028]
FIG. 1 is a schematic longitudinal sectional view showing an example of a vapor phase thin film manufacturing apparatus according to the present invention.
[0029]
The vapor phase thin film manufacturing apparatus 10 is an apparatus for raising the temperature of a semiconductor substrate by high-frequency induction heating, feeding a necessary raw material gas thereto to form a thin film on the substrate, and mainly includes a furnace 12. .
[0030]
The furnace 12 is a processing furnace for performing, for example, heating growth of the semiconductor substrate W. The furnace 12 is provided with a high-frequency induction heating unit 14, a substrate W, and a susceptor 18.
[0031]
The high-frequency induction heating unit 14 includes a heating coil 14a and a heating body 14b. The heating coil 14a is provided outside the furnace 12. The heating body 14b is provided in the furnace 12 and is provided at an interval from the upper wall surface 12a of the furnace 12. By passing a high-frequency current through the heating coil 14a, the heating body 14b in the furnace 12 is heated.
[0032]
A substrate W is provided below the heater 14b with a predetermined space (hereinafter, referred to as a first space 16). The substrate W is a disc-shaped semiconductor substrate such as a silicon wafer.
[0033]
The substrate W is held by the susceptor 18. The susceptor 18 is supported in a vertical direction in the furnace 12 by a rotation support mechanism (not shown), and is rotatably supported around a central axis. A conventionally known rotation support mechanism can be used.
[0034]
The susceptor 18 has a columnar space (hereinafter referred to as a second space 20) formed therein.
[0035]
A radiation thermometer 22, which is a typical example of a thermometer, is provided below the susceptor 18 in the axial direction. The radiation thermometer 22 is directed to the back surface of the substrate W (the surface opposite to the thin film growth surface), and can measure the temperature of the substrate W.
[0036]
The heating coil 14a and the radiation thermometer 22 are connected to a temperature controller 24. The temperature controller 24 controls the temperature of the heating coil 14a based on the temperature measured by the radiation thermometer 22.
[0037]
Gas introduction means 26 for introducing a raw material gas A used for forming a thin film on the substrate W and a purge gas B used for preventing contamination of the substrate surface and the furnace are provided on the wall surface side 12b of the furnace 12. Is provided.
[0038]
The gas introduction means 26 includes a source gas introduction port 26a, purge gas introduction ports 26b and 26c, and discharge ports 26d, 26e and 26f.
[0039]
The source gas inlet 26a and the outlet 26d are provided in accordance with the height of the surface of the substrate W, and are used for supplying and discharging the source gas A. The source gas A supplied from the source gas inlet 26a flows in the first space 16 in a substantially parallel direction along the surface of the substrate W, and is discharged to the outlet 26d.
[0040]
The purge gas inlet 26b is provided at a height directly above the source gas inlet 26a and slightly below the heating unit 14b, and is used for supplying the purge gas B. The outlet 26d is located on the furnace wall side 12b opposite to the purge gas inlet 26b, and is used for discharging the purge gas B. That is, the outlet 26d is configured as a common outlet for the source gas inlet 26a and the purge gas inlet 26b. The purge gas B supplied from the purge gas inlet 26b flows in a substantially parallel direction along the lower surface of the heating unit 14b, and is discharged to the outlet 26d.
[0041]
The purge gas introduction port 26c and the discharge port 26e are provided at a height between the upper surface of the heating unit 14b and the furnace wall upper part 12a, and are used for supplying and discharging the purge gas B. The purge gas B supplied from the purge gas inlet 26c flows in a substantially parallel direction along the upper surface of the heating unit 14b, and is discharged to the outlet 26e.
[0042]
For cooling and purging, a gas inlet 26f1 and an exhaust port 26f2 may be provided in the lower furnace wall 12c.
[0043]
FIG. 2 is a schematic longitudinal sectional view showing another example of the vapor phase thin film manufacturing apparatus according to the present invention. The members having the same functions as those of the apparatus shown in FIG. 1 are denoted by the same reference numerals.
[0044]
The vapor phase thin film manufacturing apparatus 101 is an apparatus for raising the temperature of a semiconductor substrate by resistance heating, feeding necessary raw material gas thereto to form a thin film on the substrate, and mainly includes a furnace 121.
[0045]
The furnace 121 is a processing furnace for performing, for example, heat growth of the semiconductor substrate W. The furnace 121 is provided with a resistance heating unit 141, a substrate W, and a susceptor 18.
[0046]
The resistance heating unit 141 is provided on the furnace wall upper part 121 a of the furnace 121.
[0047]
A substrate W is provided below the resistance heating unit 141 with a predetermined space (hereinafter, referred to as a first space 161). The substrate W is a semiconductor substrate such as a silicon wafer.
[0048]
The substrate W is held by the susceptor 18. The susceptor 18 is rotatably supported in the furnace 121 by a rotation support mechanism (not shown). A conventionally known rotation support mechanism can be used. The inside of the susceptor 18 is configured as a space (hereinafter, referred to as a second space 20).
[0049]
A radiation thermometer 22, which is a typical example of a thermometer, is provided below the susceptor 18 in the axial direction. The radiation thermometer 22 is directed to the back surface of the substrate W (the surface opposite to the thin film growth surface), and can measure the temperature of the substrate W.
[0050]
The resistance heating unit 141 and the radiation thermometer 22 are connected to a temperature controller 24. The temperature controller 24 controls the temperature of the resistance heating unit 141 based on the temperature measured by the radiation thermometer 22.
[0051]
Gas introduction means 261 is provided on the wall surface side portion 121 b of the furnace 121. The gas introducing means 261 is used to introduce a source gas A used for forming a thin film on the substrate W and a purge gas B used for preventing contamination on the substrate surface and in the furnace.
[0052]
The gas introduction means 261 includes a source gas introduction port 261a, purge gas introduction ports 261b, 261c, 261f1, and discharge ports 261d, 261e, 261f2.
[0053]
The source gas inlet 261a and the outlet 261d are provided according to the height of the surface of the substrate W, and are used for supplying and discharging the source gas A. The source gas A supplied from the source gas inlet 261a flows in the first space 161 in a substantially parallel direction along the surface of the substrate W, and is discharged to the outlet 261d.
[0054]
The purge gas introduction port 261b is provided just above the raw material gas introduction port 261a and at a height slightly below the resistance heating unit 141, and is used for supplying the purge gas B. The discharge port 261d is located on the furnace wall side portion 121b opposite to the purge gas introduction port 261b, and is used for discharging the purge gas B. That is, the outlet 261d is configured as a common outlet for the source gas inlet 261a and the purge gas inlet 261b. The purge gas B supplied from the purge gas inlet 261b flows in a substantially parallel direction along the lower surface of the resistance heating unit 141, and is discharged to the outlet 261d.
[0055]
The purge gas introduction port 261c and the discharge port 261e are provided near the upper part 121a of the furnace wall, and are used for supplying and discharging the purge gas B. The purge gas B supplied from the purge gas introduction port 261c flows along the periphery of the resistance heating unit 141 and is discharged to the discharge port 261e.
[0056]
For cooling and purging, a gas inlet 261f1 and an outlet 261f may be provided in the lower part 121c of the furnace wall.
[0057]
FIG. 3 is a schematic longitudinal sectional view showing still another example of the vapor phase thin film manufacturing apparatus according to the present invention. The members having the same functions as those of the apparatus shown in FIG. 1 are denoted by the same reference numerals.
[0058]
The vapor phase thin film manufacturing apparatus 102 is an apparatus for raising the temperature of a semiconductor substrate by heating a lamp, feeding necessary raw material gas thereto to form a thin film on the substrate, and mainly includes a furnace 122.
[0059]
The furnace 122 is a processing furnace for performing, for example, heat growth of the semiconductor substrate W. The furnace 122 is provided with a lamp heating unit 142, a substrate W, and the susceptor 18.
[0060]
The lamp heating unit 142 is provided above the furnace 122. The furnace wall upper part 122a is configured as a flat surface.
[0061]
A substrate W is provided below the lamp heating unit 142 with a predetermined space (hereinafter, referred to as a first space 162). The substrate W is a semiconductor substrate such as a silicon wafer.
[0062]
The substrate W is held by the susceptor 18. The susceptor 18 is rotatably supported in a furnace 122 by a rotation support mechanism (not shown). A conventionally known rotation support mechanism can be used. The inside of the susceptor 18 is configured as a space (hereinafter, referred to as a second space 20).
[0063]
A radiation thermometer 22, which is a preferred example of a thermometer, is provided below the susceptor 18 in the axial direction. The radiation thermometer 22 is directed to the back surface of the substrate W (the surface opposite to the thin film growth surface), and can measure the temperature of the substrate W.
[0064]
The lamp heating unit 142 and the radiation thermometer 22 are connected to the temperature controller 24. The temperature controller 24 adjusts the temperature of the lamp heating unit 142 based on the temperature measured by the radiation thermometer 22.
[0065]
Gas introduction means 262 is provided on the wall surface side 122 b of the furnace 122. The gas introduction means 262 is used for introducing a source gas A used for forming a thin film on the substrate W and a purge gas B used for preventing contamination on the substrate surface and in the furnace.
[0066]
The gas introduction unit 262 includes a source gas introduction port 262a, purge gas introduction ports 262b and 262f1, and discharge ports 262d and 262f2.
[0067]
The source gas inlet 262a and the outlet 262d are provided according to the height of the surface of the substrate W, and are used for supplying and discharging the source gas A. The source gas A supplied from the source gas inlet 262a flows in the first space 162 in a substantially parallel direction along the surface of the substrate W, and is discharged to the outlet 262d.
[0068]
The purge gas inlet 262b is provided at a height just above the source gas inlet 262a and slightly below the lamp heating unit 142, and is used for supplying the purge gas B. The outlet 262d is located on the furnace wall side 122b facing the purge gas inlet 262b, and is used for discharging the purge gas B. That is, the outlet 262d is configured as a common outlet for the source gas inlet 262a and the purge gas inlet 262b. The purge gas B supplied from the purge gas inlet 262b flows in a direction substantially parallel to the flat surface of the furnace wall upper portion 122a, and is discharged to the outlet 26d.
[0069]
FIG. 4 is a schematic longitudinal sectional view showing still another example of the vapor phase thin film manufacturing apparatus according to the present invention. The members having the same functions as those of the apparatus shown in FIG. 1 are denoted by the same reference numerals.
[0070]
The vapor-phase thin-film manufacturing apparatus 103 is an apparatus when the thin-film growth surface faces downward (down face), and mainly includes a furnace 123.
[0071]
The furnace 123 is a processing furnace for performing, for example, heat growth of the semiconductor substrate W. The heating device 143, the semiconductor substrate W, and the susceptor 18 are provided in the furnace 123.
[0072]
The heating device 143 is provided below the furnace 123. As the heating device 143, various heating means such as the above-described high-frequency induction heating means, resistance heating means, lamp heating means and the like can be used.
[0073]
Above the heating device 143, a substrate W is provided with a predetermined space (hereinafter, referred to as a first space 163). The substrate W is a semiconductor substrate such as a silicon wafer.
[0074]
The substrate W is held by the susceptor 18 downward. The susceptor 18 is supported in the furnace 123 by a rotation support mechanism (not shown) so as to be rotatable at high speed. This is to make the gas flow (laminar flow) on the substrate surface uniform by the high-speed rotation. A conventionally known rotation support mechanism can be used. The inside of the susceptor 18 is configured as a space (hereinafter, referred to as a second space 20).
[0075]
Above the susceptor 18 in the axial direction, a radiation thermometer 22 is provided as a thermometer. The radiation thermometer 22 is directed to the back surface of the substrate W (the surface opposite to the thin film growth surface), and can measure the temperature of the substrate W.
[0076]
The heating device 143 and the radiation thermometer 22 are connected to a temperature controller (not shown). The temperature controller adjusts the temperature of the heating device 143 based on the temperature measured by the radiation thermometer 22.
[0077]
Gas introduction means 263 is provided on the wall surface of the furnace 123. The gas introduction means 263 is used for introducing a source gas A used for forming a thin film on the substrate W.
[0078]
The gas introduction means 263 includes a source gas introduction port 263a and a discharge port 263d.
[0079]
The source gas inlet 263a is provided in the lower part 123b of the furnace wall, and the source gas A is introduced from the center of the heating device 143 by a water-cooled nozzle. By controlling the gas flow on the substrate surface by the high-speed rotation, the gas can be introduced from the side of the furnace as in the previous example. The discharge port 263d is provided in the furnace wall upper portion 123a and discharges the raw material gas A.
[0080]
The source gas A supplied from the source gas inlet 263a flows in the first space 163 from the heating device 143 toward the surface of the substrate W at an angle perpendicular to or close to the surface of the substrate W. The flow changes in a direction substantially parallel to the surface, and is eventually discharged to the discharge port 262d.
[0081]
【The invention's effect】
According to the present invention, the temperature of the semiconductor substrate can be accurately measured by measuring the back surface temperature of the thin film growth surface of the semiconductor substrate.
[0082]
Further, since the temperature on the back surface of the thin film growth surface is measured, accurate temperature measurement not affected by the growing thin film can be performed.
[0083]
Further, if the measured temperature value is used for temperature control, accurate substrate temperature (growth temperature) control can be performed. Thereby, deterioration of crystallinity (defect generation, change in crystal form) due to temperature variation or deviation can be prevented.
[0084]
When a purge gas is introduced into the furnace, contamination of the substrate surface and the furnace can be prevented.
[0085]
When a plurality of types of source gases are used, they can be introduced separately, so that the more easily decomposed gas can be introduced closer to the substrate surface, the easier it is to control the crystal.
[0086]
The rotation of the substrate enables uniform film formation.
[0087]
When a mechanism for rotating the substrate is provided, it becomes easy to adjust the laminar flow of the raw material gas in the furnace and make the film thickness uniform.
[Brief description of the drawings]
FIG. 1 is a conceptual diagram showing an example of a vapor phase thin film manufacturing apparatus according to the present invention.
FIG. 2 is a conceptual diagram showing another example of the vapor phase thin film manufacturing apparatus according to the present invention.
FIG. 3 is a conceptual diagram showing still another example of the vapor phase thin film manufacturing apparatus according to the present invention.
FIG. 4 is a conceptual diagram showing still another example of the vapor phase thin film manufacturing apparatus according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Vapor phase thin film manufacturing apparatus 12 Furnace 12a Upper furnace wall 12b Lower furnace wall 12c Furnace wall side part 14 High frequency induction heating part 14a Heating coil 14b Heating body 16 First space 18 Susceptor 20 Second space 22 Radiation thermometer 24 Temperature controller 26 gas introduction means 26a source gas introduction ports 26b, 26c purge gas introduction ports 26d, 26e, 26f outlet W semiconductor substrate A source gas B purge gas

Claims (6)

A susceptor (18) which is formed in a hollow and holds and rotates the semiconductor substrate (W) at an upper portion or a lower portion thereof;
A heater (14) for heating the semiconductor substrate (W) held by the susceptor (18);
Gas introducing means (26) for introducing a predetermined gas into a first space (16) between the semiconductor substrate (W) held by the susceptor (18) and the heater (14);
A thermometer (22) provided on the side opposite to the heater (14) for measuring the temperature of the semiconductor substrate (W) from the second space (20) into which gas is not introduced;
An apparatus for producing a vapor-phase thin film, comprising: The apparatus according to claim 1, wherein the gas flows in a direction substantially parallel to the surface of the semiconductor substrate (W). 3. The gas according to claim 1, wherein the gas flows vertically toward the surface of the semiconductor substrate (W) or at an angle close thereto, and then flows away along the surface of the semiconductor substrate (W). Gas phase thin film manufacturing equipment. A heater (141) is provided to face the thin film growth surface of the semiconductor substrate (W), and a surface of the semiconductor substrate (W) opposite to the thin film growth surface is measured by a thermometer (22). The apparatus for producing a vapor phase thin film according to claim 1. When introducing the gas, the source gas (A) and the purge gas (B) can be introduced, and a source gas inlet (26a) for introducing the source gas (A) and a purge gas (B) for introducing the purge gas (B) are provided. The gas according to any one of claims 1 to 4, wherein a purge gas inlet (26b, 26c) is provided so that the flow rates of the source gas (A) and the purge gas (B) can be controlled separately. Phase thin film manufacturing equipment. The raw material gas (A) is composed of a plurality of types of raw materials, a raw material gas inlet is provided for each raw material gas, and each raw material gas can be separately introduced. 2. The vapor phase thin film manufacturing apparatus according to claim 1.

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