JP2003328137A - Film forming equipment - Google Patents

Abstract

[Problem] To achieve both film quality control and film formation control. An electrode disposed in a vacuum vessel into which a gas is introduced is supplied with a negative DC pulse voltage and a positive bias voltage. The bias voltage 13 is applied to the electrode 6 between two DC pulse voltages 12, 12 that are temporally adjacent to each other. The bias voltage 13 can be supplied as an AC voltage or a positive voltage of a bipolar pulse voltage. Controlled by independent control of bias voltage and DC pulse voltage by effectively generating plasma ion sheath by bias voltage and uniform deposition on the processing surface by plasma CVD and ion implantation by applying negative DC pulse voltage The number of variables is increased to two, and it is possible to achieve both the film forming speed and the film quality control.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a film forming apparatus,
In particular, the present invention relates to a film forming apparatus for forming a film uniformly on various surfaces by a plasma CVD method.

[0002]

2. Description of the Related Art A film forming apparatus forms a film on various surfaces such as a resin bottle, a resin film, and a substrate.
Various physical properties such as improved encapsulation performance due to improved gas permeability, improved mechanical strength due to improved surface layer hardness,
It is widely used for modifying chemical and mechanical properties. As such a film forming apparatus, there is known a plasma CVD method (chemical vapor deposition method) in which one or more chemical substances are synthesized on a surface by vapor deposition by plasma generation or they are deposited in multiple layers. Has been.

In FIG. 10, the chemical substance to be deposited on the inner surface of the resin container 101 is introduced into the resin container 101 through the cylindrical perforated internal electrode 102, and the raw material gas 103 is introduced into the resin container 1
RF power source (high frequency power source) 1 on the external electrode 104 surrounding 01.
AC power is supplied from 05, and by the plasma P generated in the resin container 101 by the AC power, the resin container 1
1 shows a known CVD film forming apparatus for forming a film on the inner surface of 01. Such a film forming apparatus often uses an electromagnet for plasma confinement as shown in FIG.

In FIG. 12, a microwave is introduced from a microwave generator 109 into a microwave resonator 108 having a resin container 106 suspended therein and a dielectric tube 107 provided inside, and a plasma is generated around or inside the resin container 106. 2 shows another known film forming apparatus for forming a film on the inner surface of the resin container 106.

A known film forming apparatus of this kind uses CV utilizing plasma generated by applying an alternating (high frequency) voltage.
The film is formed by the D process. In the known film forming apparatus, the parameters that can be set for controlling the AC input power are limited to the electrode structure and the input power, and the dynamic control of the input power is limited. Such limitations include the adhesion of the film, the denseness of the film,
In principle, it is difficult to simultaneously control chemical, physical, and mechanical properties such as film hardness to achieve satisfactory film properties.

[0006]

An object of the present invention is to provide a film forming apparatus capable of establishing a technique for improving film quality. Another object of the present invention is to provide a film forming apparatus capable of achieving both film quality control and processing speed control.

[0007]

Means for solving the problem Means for solving the problem are expressed as follows. The technical matters appearing in the expression are accompanied by parentheses (), and numbers, symbols and the like are added. The numbers, symbols and the like are technical matters constituting at least one embodiment or a plurality of examples of the plurality of embodiments or a plurality of examples of the present invention, particularly, the embodiment or the example. It corresponds to the reference numbers, reference symbols, etc. attached to the technical matters expressed in the drawings corresponding to. Such reference numbers and reference symbols clarify correspondences and bridges between the technical matters described in the claims and the technical matters of the embodiments or examples. Such correspondence / bridge does not mean that the technical matters described in the claims are limited to the technical matters of the embodiment or the examples.

The film forming apparatus according to the present invention comprises a vacuum container (1) into which a gas is introduced and an electrode (6) arranged in the vacuum container (1). A negative DC pulse voltage (12) and an AC voltage (13) are supplied to the electrode (6). The AC voltage (13) is applied to the electrode (6) during the time between two DC pulse voltages (12, 12) that are adjacent in time. The object to be treated (T) is electrically joined to the electrode (6), and the object to be treated (T) is a dielectric hollow container for food.

A positive voltage (bias voltage) is used to effectively generate an ion sheath of plasma, and uniform deposition on the surface to be processed by plasma CVD and ion implantation by applying a negative DC pulse voltage cause a positive voltage and a negative voltage. The control variable is increased to two by the independent control of the DC pulse voltage, and the film formation rate and the film quality control can be compatible with each other. Known devices for processing food containers that utilize a self-bias determined by the electrode structure and the input power do not allow independent control of the self-bias and the input power, but the invention is free from the constraints of the known device. It realizes effective treatment of hollow containers for food.

The DC pulse voltage can be used as part of the bipolar pulse voltage. In this case, a positive voltage is inserted between adjacent negative DC pulse voltages, and an AC voltage (1
The control of 3) can be controlled as the positive voltage of the AC voltage.
The positive pulse voltage of the bipolar pulse voltage and its negative pulse voltage can be controlled independently. Independent control may be performed for each of the time-sequential intervals of the time series pulses, the pulse width, and the pulse height. Each of the two control variables is controlled in terms of the time sequence interval of the time-series pulse, the pulse width, and the pulse height, and the control parameters are increased, making it more effective to control both the film formation rate and the film quality control. .

A DC pulse power supply (5) which is arranged outside the vacuum container (1) and outputs a DC pulse voltage (12), and an AC power supply which is arranged outside the vacuum container (1) and outputs an AC voltage (13). (8) and a splicer (10) arranged between the DC pulse power supply (5) and the electrode (6) are arranged. The AC power supply (8) is connected to the electrode (6) via the splicer (10). The junction device (10) has a function of temporally correlatively controlling the DC pulse voltage (12) and the AC voltage (13) and supplying them to the electrode (6), and of course, the DC pulse voltage (12) ) And an alternating voltage (13) are independently supplied to the electrode (6).

The processing object (T), which is a hollow food container, is
It is possible to directly contact the electrode (6) and couple to the electrode (6). The object to be treated (T) is a hollow container, the gas is introduced into the hollow container, and the electrode (6) surrounds almost the entire hollow container. Such a spatial arrangement enables effective film formation on the inner surface of the hollow container.

The name according to the invention is: a vacuum container (1) into which a gas is introduced, an electrode (6) arranged in the vacuum container (1), and an electrode () arranged outside the vacuum container (1). 6)
An AC power supply (8) for supplying an AC voltage (13) to the electrode and a DC pulse power supply (5) for supplying a negative DC pulse voltage to the electrode (6). The DC voltage is applied to the electrode (6) for a time period, and the AC voltage and the DC pulse voltage are independently controlled. In particular, it is important that the AC power source (8) is connected to the power source via the transformer (14). With the addition of the transformer (14), a continuous AC voltage or a long-term AC voltage can be supplied. DC pulse power supply (5)
Is connected to the power source (17) via the transformer (16), which further increases the degree of freedom in control. According to the present invention, the addition of the transformer allows more control of the AC pulse width, the degree of being restrained by the shape or material of the processing target is low, and it is possible to control the film formation of various articles as described later. is there.

A bipolar pulse power supply (5) arranged outside the vacuum container (1) and outputting a DC pulse voltage (12).
Is effective. In this case, the AC power supply and the DC pulse power supply are also used as the same power supply, and the first duty of the positive pulse voltage of the bipolar pulse voltage and the second DC pulse voltage of the negative pulse voltage of the bipolar pulse voltage are used. Is controlled together with duty,
Moreover, the ratio of the first duty and the second duty is controlled. Such duty control further reduces the degree of being restricted by the shape or material of the processing target. The positive pulse voltage being smaller than the negative pulse voltage (12) is an effective control example.

The object to be treated (T ') is not limited to the above-mentioned hollow container (T), but a resin film, a resin sheet, a resin single layer flat plate, a resin multilayer flat plate, a resin uneven surface forming plate, a metal single layer flat plate, a metal. Multilayer flat plate, metal uneven surface forming plate, dielectric film, dielectric sheet, dielectric single layer flat plate, dielectric multilayer flat plate,
Although it is one element selected from a set including a dielectric uneven surface forming plate, a mechanical element, and an engine component, those not exemplified here are also effective.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Corresponding to the drawings, an embodiment of a film forming apparatus according to the present invention uses a vacuum container and a plasma generator for plasma generation. A plasma generator 2 is arranged together with the vacuum container 1 as shown in FIG. The plasma generator 2 generates an ion implantation plasma, performs an electrical acceleration for ion implantation, and implants ions into the processing target T, and an implantation plasma generator 3 and a plasma generation in a non-diffusion region of the plasma. To help
It is composed of a film-forming plasma generator 4 for increasing the amount of excited species / radicals of the plasma and performing film formation on the processing target T by chemical vapor deposition (CVD method). The film formation plasma generator 4 is physically the same as the plasma generator of the known apparatus, and a high frequency power supply is used.

Here, the implantation means that ions (eg, atomic ions or molecular ions, but electrons are excluded) penetrate from the surface of the object to be treated T into the inner surface layer or the thin film layer during film formation. The film formation is to adhere to the surface of the processing target T or the surface of the thin film during film formation by vapor deposition in a vacuum environment.

The injecting plasma generator 3 is a processing target bonding electrode 6 which is electrically bonded to the DC pulse power source 5 and the processing target T to mount the processing target T and to electrode the processing target itself.
It is formed from and. The bonding electrode 6 to be treated is arranged in the vacuum container 1 and is connected to the DC pulse power supply 5 arranged outside the vacuum container 1 via the current introducing terminal 7 mounted on the wall of the vacuum container 1. ing. The film forming plasma generator 4 is formed of a radio frequency power supply (RF) 8 and a processing target bonding electrode 6. The processing target bonding electrode 6 of the injection plasma generator 3 is used as it is as the processing target bonding electrode 6 of the film formation plasma generator 4, and the processing target bonding electrode 6 of the injection plasma generator 3 is used as the film formation plasma. Generator 4
It is identically identical to the processing target bonding electrode 6.

The vacuum container 1 is grounded. The high frequency power supply 8 is connected to the processing target bonding electrode 6 via the current introducing terminal 7. The vacuum container 1 is provided with a gas inlet 9 and a gas outlet 11. The processing target bonding electrode 6 is
In the present embodiment, it has an inner surface shape that closely and spatially surrounds the processing target T, and is an electric nonconductor such as a dielectric.

A jointer 1 is provided between the current introduction terminal 7 and the DC pulse power source 5. The same splicer 1 is provided between the current introduction terminal 7 and the high frequency power supply 8. The junction device 1 synthesizes the DC pulse power 12 which is the output of the DC pulse power source 5 and the alternating current (pulse) power 13 which is the output of the high frequency power source 8 and synthesizes it into the processing target junction electrode 6 via the current introduction terminal 7. Supply power. Both the DC pulse power supply 5 and the high frequency power supply 8 are grounded. The splicer 1 controls the relative time difference between the DC pulse power 12 and the AC power 13.

The junction electrode 6 to be treated, which is equally shared in this way, is treated by the plasma generator 3 for implantation.
Is a basic electrode that generates plasma around the plasma, and the plasma density of the generated plasma is also increased to increase the plasma energy of the plasma, and (simultaneously) the plasma energy of the plasma. Is a bias electrode for statically or dynamically stabilizing and controlling.

2A and 2B show a DC pulse power supply 5
And a preferable power waveform of the high frequency power source 8 is shown. Figure 2
As shown in (b), the DC pulse power supply 5 includes a DC pulse 1 having a DC negative voltage of V and a pulse width of t1.
2 is generated in a cycle (charging time) t2. High frequency power supply 8
Generates the AC pulse 13 periodically or continuously.
As the rf condition of the AC pulse 13, the frequency is set to f, the peak voltage is set to K, and the pulse width is set to t3. The DC pulse 12 rises at a rising time of the AC pulse 13 or a time delay of a unit pulse width Δt.

The prescribed film forming conditions can be controlled by adjusting the parameters constituting the negative voltage pulse condition and the rf condition to adjust the ion implantation energy distribution, the energy peak and the plasma density. By adjusting the duty ratio determined by the number of repetitions of the pulse of the DC pulse power 12 with the period t2, it is possible to more effectively control the film formation rate, which is the ion flux incident on the processing target T in a unit time. The magnitude of such a parameter affects the charge transfer speed on the surface of the processing target T (insulator in this case) that affects the pulse width t1 of the DC pulse 12, and the collision between the processing target T and particles in the plasma. The resulting charge elimination speed is set in consideration.

The width of the DC pulse 12 is on the order of μs to ms, and its voltage is preferably about several tens of kV at maximum. However, the peak value of the current is adjusted to be equal to or less than the set value of the circuit component. DC pulse 12
It is preferable that the repetition width t2 of is about several hundreds pps to several thousands pps.

A film forming gas and a plasma excitation gas (eg, argon) are introduced into the vacuum chamber 1, and a DC pulse power 5 and a high frequency power supply 8 are applied to the processing target junction electrode 6 to generate a DC pulse power 12 and an alternating current. The power 13 is applied under the above-mentioned application conditions.

FIG. 3 exemplifies an electric conductor as the material of the processing object T. By appropriate setting of the application conditions and setting of the gas pressure at which a high voltage is maintained without non-uniform discharge and arc generation, along the surface of the processing target T in the peripheral region of the processing target T or in the vicinity thereof, Plasma P is uniformly generated.

The DC pulse 12 has an electric ability to generate plasma P in a region near the surface of the processing object T by self-discharge due to its own high voltage. The AC pulse 13 for generating the bias voltage further increases the excitation energy of the plasma generated by the DC pulse 12,
The amount of excited species / radicals is supplementarily and widely increased. The plasma sheath formed by the self-discharge of the DC pulse 12 applied to the same electrode 6 as the electrode 6 for generating the plasma in the presence of the plasma has a shape corresponding to the surface shape of the processing target T, An electric accelerating field that uniformly implants positive ions is formed on the surface layer of a processing target (example: PET bottle) T having various different shapes (example: uneven surface shape).

Bonding electrode 6 to be treated and bonding electrode 6 to be treated
A plasma is generated around the processing target T of the conductor that is electrically joined to. An AC pulse 13 is applied to the bonding electrode 6 to be processed, preceding the DC pulse 12 in time. The DC pulse 12 is applied to the processing target junction electrode 6 with a time delay of Δt from the application of the AC pulse 13. Processing target T
The positive ions and the electrons of the plasma P around the are subjected to electrostatic force. The electrons are strongly repelled from the surface of the processing target T or in the vicinity of the surface and move away from the processing target T, and positive ions are attracted to the processing target T and remain around the processing target T, resulting in ionization. The generated positive ions are strongly accelerated toward the processing target T. The positive ions thus accelerated are implanted and vapor-deposited on the surface of the processing target T. DC pulse power controlled 12
The auxiliary application of the AC pulse controlled with respect to the control parameter weakens the control constraint of the control parameter and enhances the setting freedom of the control condition, and the control can be dynamically executed in one processing process.

During the direct current pulse 12 of the period t2, the ion sheath is eliminated, and the radicals existing in the vicinity of the processing target T, which are the excited species activated in the plasma P by the afterglow, are high. It efficiently reaches the surface of the processing target T and promotes film formation. As described above, according to the present invention, the adhesion (corresponding to the chemical effect) and the denseness (corresponding to the physical effect) are combined by the combined effect of the physical effect that is the injection film formation and the chemical effect that is the vapor deposition film. A new material layer having a (corresponding to) can be formed on the surface of the processing target T at a high speed.

FIG. 4 shows another embodiment of the film forming apparatus according to the present invention. The present embodiment differs from the above-described embodiment in that the high-frequency power supply 8 of the above-described embodiment is omitted, but the DC pulse power supply 5 is modified. The DC pulse power supply 5 of the present embodiment outputs DC pulse power of positive and negative bipolar, instead of DC pulse of only negative voltage. While the positive voltage pulse of the bonding electrode 6 to be processed is being applied, the positive voltage pulse causes the target T to be processed.
Plasma is generated around the
Formation of a film by D is promoted. The application of the negative voltage pulse immediately after the application of the positive voltage assists the discharge.

FIG. 5 shows a control mode of the bipolar DC pulse of the DC pulse power supply 5. In the present embodiment,
Positive voltage is converted to direct current. The DC pulse power 12 is formed of a positive voltage pulse 12-1 and a negative voltage pulse 12-2. The positive-side voltage pulse 12-1 is processed by the negative-side voltage pulse 12-2 to form the processing target junction electrode 6 of the processing target T.
By eliminating the electrical accumulation accumulated on the processing target T on the inner surface of the substrate, the film formation rate can be improved. In FIG. 5A, the positive-side voltage pulse 12-1 and the negative-side voltage pulse 12-2 have the same voltage absolute value, and the positive-side voltage pulse 12 is in the middle of two adjacent negative-side voltage pulses 12-2. -1 shows a control mode in which it is temporally located.

In FIG. 5B, the absolute voltage value of the positive voltage pulse 12-1 is smaller than the absolute voltage value of the negative voltage pulse 12-2, and two adjacent negative voltage pulses 12-2.
The control mode is shown in which the positive side voltage pulse 12-1 is temporally positioned in the middle of the figure. By optimizing the ratio of relative voltage intensities, it is possible to optimize the degree of elimination of ion accumulation, and controllably improve the film formation rate, the film adhesion performance, and the film denseness performance.

In FIG. 5C, the absolute voltage value of the positive voltage pulse 12-1 is smaller than the absolute voltage value of the negative voltage pulse 12-2, and two adjacent negative voltage pulses 12-2.
The positive side voltage pulse 12-1 is not positioned in the middle of the time, and the negative side voltage pulse 12-2 is the positive side voltage pulse 12-1.
The time width preceding in time is the positive voltage pulse 1
2-1 is different from the time width in which the negative-side voltage pulse 12-2 temporally precedes, and in particular, the time in which the negative-side voltage pulse 12-2 temporally precedes the positive-side voltage pulse 12-1. As for the width, the positive side voltage pulse 12-1 is the negative side voltage pulse 12-
The ion accumulation timing and its elimination degree are controlled to be wider than the time width preceding 2 in terms of time.

Not limited to the control mode shown in FIG. 5, the duty, ion accumulation timing, and ion accumulation elimination timing can be controlled by changing the temporal density of both pulses 12-1 and 12-2.

FIG. 6 shows an embodiment of another film forming apparatus according to the present invention. The present embodiment differs from the embodiment corresponding to FIG. 1 in that the DC pulse power supply 5 of the embodiment corresponding to FIG. 1 is changed to a positive / negative bipolar DC pulse power supply 5. In the present embodiment, a positive DC (bias) voltage is further added to the DC pulse voltage of the embodiment corresponding to FIG. The present embodiment controls the positive voltage more finely,
By increasing the number of control parameters, the film formation rate, the film adhesion performance, and the film denseness performance can be improved respectively. The increase in the number of control parameters means that the processing target T '
The present invention is not limited to the dielectric hollow container T, and promotes the effectiveness of the film forming process for various articles.

FIG. 7 shows still another embodiment of the film forming apparatus according to the present invention. High-frequency power source 8 of the present embodiment
Is provided as a continuous RF power supply or a long-time pulsed RF power supply. A power source 15 and an isolation transformer 14 are attached to the high frequency power source 8. The present embodiment is
By generating a continuous pulse or a long time pulse as the AC power 13, the discharge time for plasma generation can be extended. Discharge time of AC power 13 is several μs
In the present embodiment in which the DC pulse power 12 and the AC power 13 temporally overlap each other due to the extension of the discharge time due to continuous control, it is necessary to insulate the high frequency power supply 8 by the insulating transformer 14.

FIG. 8 shows still another embodiment of the film forming apparatus according to the present invention. The present embodiment differs from the embodiment shown in FIG. 7 in that the DC pulse power supply 5 is insulated and the variable DC power supply 18 is added to the high frequency power supply 8. Another power source 17 and another isolation transformer 16 are added. The isolation transformer 16 is provided between the DC pulse power source 5 and the power source 17. Isolation transformer 14
The variable DC output that is output by is input to the high frequency power source 8 and is output from the high frequency power source 8 as it is. A variable DC power is further mixed with the AC / DC hybrid power that is configured by connecting the DC pulse power source 5 and the high frequency power source 8 in parallel, and is supplied to the processing target bonding electrode 6. By adding the insulation transformer 16, it is possible to mix continuously variable DC power. Due to the mixed input of the continuously variable DC power, the voltage of the continuous DC is applied to the bonding electrode 6 to be processed, and the plasma generation can be further stabilized.

In the present embodiment, a negative continuous bias is applied to the junction electrode 6 to be processed by the variable DC power supply 18, and ion implantation is possible in a time period when the DC pulse power 12 is not applied. While 12 is being applied, ions can be implanted at a high voltage with a higher voltage, and the film quality can be maintained and improved during high-speed film formation.

FIG. 9 shows still another embodiment of the film forming apparatus according to the present invention. The present embodiment differs from the embodiment shown in FIG. 8 in that the high frequency power supply 8 shown in FIG. 8 is omitted. In the present embodiment, the number of control parameters is reduced as compared with the embodiment shown in FIG. 8, but positive and negative DC pulse power is applied to the processing target junction electrode 6 as a bipolar and discharge is controlled by the positive DC pulse power. The point that ion implantation is realized with negative DC pulse power is common to all the embodiments of the film forming apparatus according to the present invention.

The film quality (physical properties such as adhesion, denseness and hardness) and the processing speed are the duty of the DC pulse power 12, the pulse width of the DC pulse power 12, and the AC power 13
The duty, the time difference between the DC pulse power 12 and the AC power 13, the pulse voltage of the DC pulse power 12, the pulse voltage of the AC power 13, and the relative difference between the pulse voltage of the DC pulse power 12 and the pulse voltage of the AC power 13. Stipulated. The combination of the AC power 13 and the DC pulse power 12 exponentially increases the control combinations of the control parameters, and by increasing the variables, it is possible to increase the number of variables to be controlled, and to increase the number of film qualities. The processing speed can be controlled simultaneously. The gas pressure is appropriately set for avoiding the discharge arc, in addition to controlling the hardness and the processing speed (film forming speed).

Applying a negative voltage pulse or a bipolar pulse and an AC voltage to the junction electrode 6 to be treated, which is the same electrode, attracts plasma ions (positive ions) to the negative voltage applying electrode 6 to cause the negative voltage applying electrode 6 to move. Negative charges are uniformly dispersed on the surface or the inner surface of the bonding electrode 6 to be processed by receiving the atmosphere of the surrounding plasma, and the plasma is generated along the surface. While the DC voltage is pulsed and there is a rest period, and while the self-repulsive dispersion and assembly of electrons on the surface of the junction electrode 6 to be treated is repeated, positive ions collide with the surface of the T to be treated, resulting in an ion implantation effect. Is demonstrated. In this way, a film that is both dense and coherent is formed on the processing target T by achieving both deposition and implantation. When a negative voltage is applied in the presence of plasma, the ion sheath formed along the shape of the container directs positive ions toward the target T to be processed T ′.
It promotes uniform acceleration with respect to the surface of the implant and promotes uniformity of implantation. In this way, the film formation rate and the film quality are made uniform over the entire area of the surface of the processing target T ′, and the film quality is improved in terms of uniformity. Such an effect is particularly strong when the processing target has a three-dimensionally complicated shape. An inner surface coating of a PET bottle is preferably exemplified as a treatment target that receives a particularly strong effect.

When the object T'to be treated is an electrically insulating object, positive ions are projected onto the inner wall surface of the container to be treated T'by the ion sheath formed as described above,
At the same time, the surface potential shifts in the positive direction due to charge accumulation, and the incoming ions may eventually be repelled.The pulse width of the applied negative pulse voltage depends on the charge mobility of the insulator surface and other particles. It is another effect accompanying the present invention that the electric charge elimination time due to collision of the electric field is limited, and the restriction is relaxed by controlling the cycle of the application of the positive voltage pulse and the application of the AC voltage. Such restrictions do not apply to electrically conductive objects.

The film forming apparatus according to the present invention has the following effects. (1) A negative voltage DC pulse and a positive voltage in a time period in which the negative voltage DC pulse is not applied are applied to the electrodes, and the plasma CVD effect of applying the positive voltage and the positive ion acceleration effect of applying the negative voltage are applied. By repeating the two actions of injection, the number of control parameters is increased, the film quality can be improved, and further, the film quality at the time of high-speed regular film can be expected. The positive voltage can be obtained as a pulse on the positive side of the bipolar DC pulse. Here, the direct current is a current that allows simultaneous control of the number of pulses per unit time, the pulse width, and the height of the pulse, and generally, a digitalized rectangular wave is exemplified. It is not an alternating sine wave current.

(2) By applying AC power and a positive voltage pulse, the film formation rate by plasma CVD based on the discharge along the processing surface is improved, and the ion implantation effect improves the adhesion and denseness of the film. can do.

(3) By applying an AC voltage and a bipolar DC voltage, the plasma regularity is strengthened when a positive voltage is applied to accelerate the progress of the CVD process, and by applying a negative voltage,
It is possible to promote discharge assistance and ion implantation while forming an ion sheath to form a uniform plasma layer on the treated surface. (4) Continuous ion implantation is realized by applying a variable DC voltage, and high-voltage ion implantation is possible by adding a negative voltage pulse, improving the film formation speed and physical properties (film quality).
It is possible to effectively achieve both improvement and improvement.

[0046]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The electrode 6 shown in FIG. 1 is covered with an insulator or a ground electrode and is shielded to avoid film formation on the electrode and discharge of the electrode. The gas inlet 9 is the vacuum container 1
Be pulled in. If the processing target T is an electric conductor, the processing target T also serves as the processing target bonding electrode 6. The end of the gas inlet 9 in the vacuum container 1 does not enter the processing target bonding electrode 6 in order to prevent excessive gas discharge and carbon contamination.
Moreover, it does not enter the processing target T which is a container. As the vacuum container 1, a container whose vacuum degree can be made higher than 10 −4 power is used. A negative voltage having a width of μs to ms is applied to the bonding electrode 6 to be processed. The DC pulse power supply 5 is grounded. While the DC pulse power 12 is at rest (not present), the AC power 13 is applied to the bonding electrode 6 to be processed. DC pulse power 12
And AC power 13 are repeated several hundred pps
~ On the order of thousands of pps. The embodiment shown in FIGS. 1 and 2 applies only to the processing of containers.

[0047]

The film forming apparatus according to the present invention can control film quality and film formation by increasing control variables.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a film forming apparatus according to the present invention.

FIG. 2 is a graph showing an AC pulse and a DC pulse, respectively.

FIG. 3 is a cross-sectional view showing generation of an ion sheath.

FIG. 4 is a cross-sectional view showing another embodiment of the film forming apparatus according to the present invention.

5 (a), (b), and (c) are graphs showing bipolar DC pulses, respectively.

FIG. 6 is a cross-sectional view showing still another embodiment of the film forming apparatus according to the present invention.

FIG. 7 is a cross-sectional view showing still another embodiment of the film forming apparatus according to the present invention.

FIG. 8 is a sectional view showing still another embodiment of the film forming apparatus according to the present invention.

FIG. 9 is a cross-sectional view showing still another embodiment of the film forming apparatus according to the present invention.

FIG. 10 is a cross-sectional view showing a known device.

FIG. 11 is a cross-sectional view showing another known device.

FIG. 12 is a sectional view showing still another known device.

[Explanation of symbols]

1 ... Vacuum container 5 ... Bipolar pulse power supply (DC pulse power supply) 6 ... Electrode 8 ... AC pulse power supply 10 ... Splicer 12 ... DC pulse voltage 13 ... AC voltage 14, 16 ... Transformer 15, 17 ... Power source T: Target (hollow container) T '... processing target

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) // C08L 101: 00 C08L 101: 00 (72) Inventor Mitsuhiro Yoshida 4-6 Kannon Shinmachi, Nishi-ku, Hiroshima-shi, Hiroshima No. 22 Mitsubishi Heavy Industries, Ltd. Hiroshima Research Laboratory (72) Inventor Yuji Asahara 4-6-22 Kannon Shinmachi, Nishi-ku, Hiroshima-shi, Hiroshima Prefecture Mitsubishi Heavy Industries Ltd. Hiroshima Research Laboratory (72) Inventor Toshiaki Katsura Kannon, Nishi-ku, Hiroshima-shi, Hiroshima Prefecture 4-6-22, Shinmachi Mitsubishi Heavy Industries Ltd. Hiroshima Research Laboratory (72) Inventor Takeshi Tanaka, 1-1 Miyake 2-chome, Saiki-ku, Hiroshima City, Hiroshima Prefecture (72) Inventor Toshinori Takagi Hiroshima City, Hiroshima Prefecture 2-1, 1-1 Miyake, Saiki-ku Hiroshima Institute of Technology F-term (reference) 3E062 AA09 AB02 AB14 JA01 JA07 JB24 4F006 AA11 AA31 AB72 BA00 BA02 BA05 CA00 DA01 4K030 CA 07 CA15 EA06 FA01 FA03 JA17 KA41

Claims (13)

[Claims] 1. A vacuum container into which a gas is introduced, and an electrode arranged in the vacuum container, wherein a negative DC pulse voltage and an AC voltage are supplied to the electrode, and the AC voltage is The AC voltage and the DC pulse voltage are independently controlled by being applied to the electrode between two DC pulse voltages that are temporally adjacent to each other, and the processing target is electrically bonded to the electrode, The target is a film forming apparatus that is a hollow container for food made of dielectric material. 2. The film forming apparatus according to claim 1, wherein a gas for film formation is introduced into the inside of the hollow container. 3. The film forming apparatus according to claim 1, wherein the DC pulse voltage is a part of a bipolar pulse voltage. 4. A bipolar pulse power supply which is arranged outside the vacuum container and outputs the bipolar pulse voltage, an AC power supply which is arranged outside the vacuum container and outputs the AC voltage, the DC pulse power supply and the electrode. Further comprising a splicer disposed between the AC power supply and the electrode via the splicer, the splicer temporally correlates the DC pulse voltage and the AC voltage. 3. The electrode is controlled to be electrically supplied to the electrode.
Film deposition equipment. 5. A vacuum container into which a gas is introduced, an electrode arranged inside the vacuum container, an AC power supply arranged outside the vacuum container to supply an AC voltage to the electrode, and a negative electrode connected to the electrode. A DC pulsed power supply for supplying a DC pulsed voltage of, wherein the AC voltage is applied to the electrode between two DC pulsed voltages that are temporally adjacent to each other, and the AC voltage and the DC pulsed voltage are A film forming apparatus which is independently controlled and in which the AC power source is connected to a power source via a transformer. 6. The film forming apparatus according to claim 5, wherein the DC pulse power source is connected to a power source via a transformer. 7. The film forming apparatus according to claim 6, wherein the DC pulse power supply is a bipolar pulse power supply that outputs a bipolar pulse voltage. 8. The film forming apparatus according to claim 5, wherein the DC pulse power supply is a bipolar pulse power supply that outputs a bipolar pulse voltage. 9. The alternating current power supply and the direct current pulse power supply are also used as the same power supply, and the first duty of the positive side pulse voltage of the bipolar pulse voltage and the direct current of the negative side pulse voltage of the bipolar pulse voltage. The film forming apparatus according to claim 5, wherein the second duty of the pulse voltage is controlled together, and the ratio between the first duty and the second duty is controlled. 10. The film forming apparatus according to claim 9, wherein the positive pulse voltage is smaller than the negative pulse voltage. 11. The film forming apparatus according to claim 1, wherein the object to be processed is selected from any one of claims 5 to 10 which is in direct contact with the electrode and is bonded to the electrode. 12. The method according to claim 5, wherein the object to be treated is a hollow container, the gas is introduced into the hollow container, and the electrode surrounds substantially the entire hollow container. Item film forming apparatus. 13. The object to be treated is a resin film, a resin sheet, a resin single layer flat plate, a resin multilayer flat plate, a resin uneven surface forming plate, a metal single layer flat plate, a metal multilayer flat plate, a metal uneven surface forming plate,
13. An element selected from the group consisting of a dielectric film, a dielectric sheet, a dielectric single layer flat plate, a dielectric multilayer flat plate, a dielectric uneven surface forming plate, a mechanical element, and an engine component. The film forming apparatus according to claim 1, which is selected.