JP2003328128A - Method for producing metallic film and apparatus for producing metallic film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing a metallic film by which film deposition reaction can be promoted in the production of a metallic film by which a film deposition rate is accelerated, inexpensive raw materials can be used, and impurities in a film can be reduced as possible. <P>SOLUTION: The temperatures of a steel sheet member 7 and a substrate 3 and a temperature difference therebetween are controlled in accordance with the prescribed ones, so that the copper sheet member 7 is subjected to etching with gaseous Cl<SB>2</SB>plasma in a chamber 1 to form a precursor of a Cu component and gaseous Cl<SB>2</SB>. The Cu component in the precursor is precipitated over the substrate 3, so that film deposition of Cu is carried out. In this case, Cl* is formed in an excitation chamber 25 of a passage 24 communicating with the inside of the chamber 1 and circulating the gaseous Cl<SB>2</SB>. The Cl* is fed into the chamber 1, so that the gaseous Cl<SB>2</SB>is discharged from the precursor adsorbed on the substrate 3 to promote the film deposition reaction of the Cu film. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a metal film and a method for manufacturing the same.
Regarding a metal film production apparatus, in particular, a raw material gas containing halogen.
High vapor pressure halides formed from metal
The etched member under specified conditions.
This is useful for forming a film of this metal.
It is. [0002] The present invention also relates to an object having a plurality of types of metals.
Raw material gas purifier containing halogen especially for etching member
Forming a composite metal by etching with Zuma
It is also useful to apply to cases. [0003] 2. Description of the Related Art Conventionally, a metal film is formed by a vapor phase growth method.
For example, when producing a copper thin film, for example,
Liquids such as roacetylacetonato and trimethylvinylsilane
Using solid organometallic complex as raw material and dissolving solid raw material
By dissolving in a medium and vaporizing using a thermal reaction
A film is being formed on the substrate. [0004] SUMMARY OF THE INVENTION The above-mentioned prior art is based on a thermal method.
To improve the film formation rate for film formation utilizing a reactive reaction.
And was difficult. Also, the metal complex as the raw material is expensive
Yes, and hexafluoroacetyla
Setonato and trimethylvinylsilane are not present in the copper film.
Difficult to improve film quality because it remains as a pure substance
Met. In view of the above prior art, the present invention provides a film forming rate
Fast, inexpensive raw materials can be used, and impurities in the film
Film manufacturing method and metal film manufacturing apparatus capable of reducing as much as possible
The purpose is to provide a device. [0006] The present inventors have made the following findings.
Obtained. That is, the salt is placed in a vacuum chamber containing the substrate.
The chlorine gas is supplied by the plasma generation means.
While the copper plate is placed in the chamber.
The member to be etched is etched with chlorine gas plasma.
Control the temperature relationship between the copper plate and the board
To deposit the etched copper on the substrate
Thus, a copper thin film can be formed. Ie etch
A copper plate as a sealing member is heated to a high temperature (for example, 300 ° C. to 400 ° C.).
° C) and when the substrate temperature is low (about 200 ° C).
If the substrate can form a copper thin film
It is. Therefore, a relatively high temperature atmosphere is formed.
While placing a copper plate facing the chlorine gas plasma
Relative low-temperature atmosphere facing the copper plate across the plasma atmosphere
Place the board in the atmosphere and properly control the temperature of both.
To provide Cu thin film production equipment easily by controlling
be able to. Here, the member to be etched is Cu
In addition, for example, Ta, Ti, W, Zn, In, Cd
For metals that produce high vapor pressure halides, such as
Can be. Furthermore, these metals are included in plural types.
A part to be etched with a composite metal, for example, an alloy of In and Cu
It can also be a material. Further, the metal such as S, Se, etc.
Composite metals containing non-metallic elements, such as CuInSe_Two, C
An alloy such as dS or ZnSe is used as a member to be etched.
You can also. The source gas is Cl_TwoBesides, halo
Any gen gas can be generally used. In the above-described apparatus for producing a Cu thin film,
It is considered that such a reaction has occurred. Plasma dissociation reaction; Cl_Two→ 2Cl^*Etching reaction; Cu + Cl^*→ CuCl (g)   Adsorption reaction on substrate; CuCl (g) → CuCl (ad)   Film formation reaction; CuCl (ad) + Cl^*→ Cu + Cl_Two・ ・ ・ ... (1) Where Cl^*Is a radical of Cl, (g)
Indicates a gas state, and (ad) indicates an adsorption state.
Respectively. In the above equation (1), Cl^*If exists
The reaction proceeds to the right side of the equation, and the Cu film can be deposited well.
Can be. However, Cl gas plasma contains Cl
_Two, Cl⁺Etc. are mixed and Cl^*Occurs preferentially
There is no. Therefore, the reaction of equation (1) uniquely proceeds
Rather, a reaction that proceeds to the left is generated at the same time. Further
Possible to etch Cu film deposited
There is also. [0011] Further, from CuCl (ad) to Cl_TwoEnough
The next reaction may occur without pulling out. CuCl (ad) → CuCl (s) That is, a CuCl solid is formed. This CuC
l (s) is an insulator. Therefore, in Cu film
The presence of CuCl (s) reduces the conductivity of the resulting Cu film.
This causes a decrease in the film quality, and deteriorates the film quality. Therefore, metal film production based on the above-mentioned knowledge is
Achieving good manufacturing methods and further improving film quality
At the same time, in order to further improve the deposition rate,
And a sufficient amount of Cl^*So that there is
Cl^*May be supplied separately. This is the chamber
High density Cl in another space with a smaller volume than^*Occurs
What is necessary is just to supply this. Empty with small volume
The one in between is Cl^*The plasma conditions so that
This is because it is easy. On the other hand, another film forming reaction is as follows:
It is considered that the reaction represented by (2) also occurred.       2CuCl (ad) → 2Cu + Cl_Two・ ・ ・ ・ ・ ・ ・ ・ ・ (2) In the above equation (2), CuCl (ad) is thermally
With the energy, Cu is deposited, and Cl_TwoRelease gas
Reaction, but a reversible reaction that is possible in thermal equilibrium
It is. In the above formula (2), Cl_TwoIf you reduce the amount of
Reaction goes to the right, but for this, Cl_TwoSolve gas
You just have to separate it. [0015] Therefore, metal film production based on the above-mentioned knowledge is considered.
Achieving good manufacturing methods and further improving film quality
At the same time, to further improve the deposition rate,
And Cl generated during the film formation reaction_TwoThe amount of gas decreases
It is sufficient to increase the dissociation rate as described above. This is a basic
Can be realized by adjusting the plasma conditions. [0016] The object of the present invention is a predetermined
By utilizing the etching phenomenon under the temperature control of
While achieving the effect, and
By supplying the radicals of
The present invention, which focuses on the film forming reaction of the above formula (1),
The configuration of the first metal film manufacturing method has the following features. 1) The height of the chamber for accommodating the substrate therein is high.
Etching formed with metal making vapor pressure halide
While the member is provided, the member to be etched and the substrate
By controlling the temperature to a predetermined temperature and a temperature difference.
Source gas containing halogen in the chamber.
Etching the member to be etched with a metal
And a precursor gas and a metal component of the precursor
Film on the substrate to form a predetermined film
Then, radicals of the source gas are separately formed,
By replenishing feed gas radicals into the chamber
Raw material gas is obtained from the precursor which is in an adsorbed state on the substrate.
Pull out to deposit the metal component on the substrate
To do. 2) The method for producing a metal film described in 1) above
In, the radicals of the source gas communicate with the chamber
High-frequency electric field acts on the raw material gas flowing through the cylindrical passage
Then, the raw material gas is turned into plasma. 3) The method for producing a metal film described in 1) above
In, the radicals of the source gas communicate with the chamber
Microwave to the raw material gas flowing through the cylindrical passage
Obtaining the leverage gas by converting it into plasma. 4) The method for producing a metal film described in 1) above
In, the radicals of the source gas communicate with the chamber
Heats the raw material gas flowing through the cylindrical passage for thermal dissociation
To gain more. 5) The method for producing a metal film described in 1) above
In, the radicals of the source gas communicate with the chamber
Laser gas or electron beam to the raw material gas flowing through the cylindrical passage
To dissociate this source gas by supplying electromagnetic waves such as
To gain more. Similarly, the object of the present invention is based on the above findings.
Using the etching phenomenon under a predetermined temperature control
And achieve the effect by adsorbing it on the substrate.
To increase the dissociation rate of the raw material gas
In order to make the film formation reaction of the above formula (2) even more remarkable,
The configuration of the second method for manufacturing a metal film according to the present invention, which has been focused on, is as follows.
Is characterized. 6) The height of the chamber for accommodating the substrate therein is high.
Etching formed with metal making vapor pressure halide
While the member is provided, the member to be etched and the substrate
By controlling the temperature to a predetermined temperature and a temperature difference.
Source gas containing halogen in the chamber.
Etching the member to be etched with a metal
And a precursor gas and a metal component of the precursor
Film on the substrate to form a predetermined film
Increases the dissociation rate of the source gas generated during the film formation reaction.
Control of the plasma conditions to be applied. 7) The method for producing a metal film described in 6) above
In the control of the plasma conditions, the supply amount of the source gas
To achieve by reducing. 8) The method for producing a metal film described in 6) above
In the control of the plasma conditions, the source gas plasma
To increase the amount of high-frequency power to form
To achieve more. 9) The method for producing a metal film described in 6) above
In the control of plasma conditions, in addition to the source gas,
By supplying a rare gas having an amount of Ne or more into the chamber,
Realization. 10) The method for preparing a metal film described in 6) above
In the method, the control of the plasma conditions is controlled by an electromagnetic
A wave is supplied to dissociate the source gas supplied into the chamber.
To achieve it. The first method for realizing the first method for producing a metal film is described below.
The configuration of the metal film manufacturing apparatus described above is characterized by the following points. 11) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
Etched metal formed of high vapor pressure halide
Between the substrate and the member to be etched.
Supply a halogen-containing source gas into the chamber at
Source gas supply means for supplying the material to be etched, and
To supply high frequency power to the chamber
The raw material gas supplied to the inside of the
Plasma generator for forming source gas plasma in the chamber
Step and the temperature of the substrate are higher than the temperature of the member to be etched.
The source gas plasma is subjected to
Metal component obtained by etching the etching member
Of metal components from the precursors of gas and raw material gas onto the substrate
Temperature control means for performing a predetermined film formation;
Source gas radical replenishment to replenish the chamber with the chamber
Having means. 12) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
Etched metal formed of high vapor pressure halide
And a raw material gas plasma containing halogen
It is formed outside the chamber,
Gap between the substrate and the member to be etched
Source gas plasma supply means for supplying into the chamber;
The temperature of the plate is lower than the temperature of the member to be etched.
The source gas plasma to be etched
Metal component and raw material gas obtained by etching members
The metal component is deposited on the substrate from the precursor with
Temperature control means for performing film formation, and radicals in the raw material gas
Source gas radical replenishing means for replenishing the inside of the chamber.
To have. 13) A cylindrical chamber for accommodating a substrate
And avoiding the position facing the substrate in this chamber
Formed with metal making high vapor pressure halide located at the location
The member to be etched, and the substrate in the chamber.
And between the member to be etched and
A shielding plate having a hole facing the direction of the substrate;
Halo in the chamber between the sealing member and the shielding plate.
Source gas supply means for supplying a source gas containing benzene
And a high-frequency wave for etching the member to be etched.
Raw material supplied inside the chamber by the supply of a number of power
Convert the gas into plasma and generate source gas plasma in the chamber
A plasma generating means for forming a film, and a temperature of the substrate.
A predetermined temperature lower than the temperature of the member to be etched is controlled.
The source gas plasma etches the member to be etched.
Of metal component and raw material gas obtained by chilling
Temperature at which metal components are deposited on the substrate from the body to form a prescribed film
Degree control means, and radicals of the source gas
Source gas radical replenishing means for replenishing the inside
When. 14) The above 11), 12) or 13)
In the metal film manufacturing apparatus according to any one of the above,
The means for replenishing radicals communicates with the
Coil wound around a cylindrical passage through which
Frequency current, which creates an electric field.
That the source gas is converted to plasma. 15) The above 11), 12) or 13)
In the metal film manufacturing apparatus according to any one of the above,
The means for replenishing radicals communicates with the
A means for supplying microwaves is provided in the cylindrical passage through which the
The microwave generated by the microwave supply means.
The source gas is turned into plasma. 16) The method of the above 11), 12) or 13)
In the metal film manufacturing apparatus according to any one of the above,
The means for replenishing the radical is a cylindrical
The raw material gas flowing through the passage is heated to thermally
Have heating means to dissociate. 17) The method of the above 11), 12) or 13)
In the metal film manufacturing apparatus according to any one of the above,
The means for replenishing the radical is a cylindrical
Electromagnetic such as laser light or electron beam is applied to the raw material gas flowing through the passage.
Electromagnetic wave generating means for supplying waves to dissociate this source gas
Having The second method for realizing the second method for producing a metal film is described below.
The configuration of the metal film manufacturing apparatus described above is characterized by the following points. 18) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
Etched metal formed of high vapor pressure halide
Between the substrate and the member to be etched.
Supply a halogen-containing source gas into the chamber at
Source gas supply means for supplying the material to be etched, and
To supply high frequency power to the chamber
The raw material gas supplied to the inside of the
Plasma generator for forming source gas plasma in the chamber
Step and the temperature of the substrate are higher than the temperature of the member to be etched.
The source gas plasma is subjected to
Metal component obtained by etching the etching member
Of metal components from the precursors of gas and raw material gas onto the substrate
Temperature control means for performing predetermined film formation,
A rare gas supply for supplying a rare gas having an amount of Ne or more into the chamber.
Having supply means. 19) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
Etched metal formed of high vapor pressure halide
And a raw material gas plasma containing halogen
It is formed outside the chamber,
Gap between the substrate and the member to be etched
Source gas plasma supply means for supplying into the chamber;
The temperature of the plate is lower than the temperature of the member to be etched.
The source gas plasma to be etched
Metal component and raw material gas obtained by etching members
The metal component is deposited on the substrate from the precursor with
In addition to the temperature control means for performing the film and the source gas, the mass is Ne.
A rare gas supply means for supplying the above rare gas into the chamber;
Having 20) A cylindrical chamber for accommodating a substrate
And avoiding the position facing the substrate in this chamber
Formed with metal making high vapor pressure halide located at the location
The member to be etched, and the substrate in the chamber.
And between the member to be etched and
A shielding plate having a hole facing the direction of the substrate;
Halo in the chamber between the sealing member and the shielding plate.
Source gas supply means for supplying a source gas containing benzene
And a high-frequency wave for etching the member to be etched.
Raw material supplied inside the chamber by the supply of a number of power
Convert the gas into plasma and generate source gas plasma in the chamber
A plasma generating means for forming a film, and a temperature of the substrate.
A predetermined temperature lower than the temperature of the member to be etched is controlled.
The source gas plasma etches the member to be etched.
Of metal component and raw material gas obtained by chilling
Temperature at which metal components are deposited on the substrate from the body to form a prescribed film
And a rare gas whose mass is equal to or greater than Ne, in addition to the raw material gas.
Rare gas supply means for supplying a gas into the chamber.
A metal film production apparatus characterized by the above. 21) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
Etched metal formed of high vapor pressure halide
Between the substrate and the member to be etched.
Supply a halogen-containing source gas into the chamber at
Source gas supply means for supplying the material to be etched, and
To supply high frequency power to the chamber
The raw material gas supplied to the inside of the
Plasma generator for forming source gas plasma in the chamber
Step and the temperature of the substrate are higher than the temperature of the member to be etched.
The source gas plasma is subjected to
Metal component obtained by etching the etching member
Of metal components from the precursors of gas and raw material gas onto the substrate
Temperature control means for performing a predetermined film formation;
Supplying a magnetic wave to dissociate the source gas generated during the film formation reaction
And means for generating electromagnetic waves. 22) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
Etched metal formed of high vapor pressure halide
And a raw material gas plasma containing halogen
It is formed outside the chamber,
Gap between the substrate and the member to be etched
Source gas plasma supply means for supplying into the chamber;
The temperature of the plate is lower than the temperature of the member to be etched.
The source gas plasma to be etched
Metal component and raw material gas obtained by etching members
The metal component is deposited on the substrate from the precursor with
Temperature control means for forming a film, and an electromagnetic wave supplied to the chamber.
To dissociate the source gas generated during the film formation reaction.
Having magnetic wave generating means. 23) A cylindrical chamber for accommodating a substrate
And avoiding the position facing the substrate in this chamber
Formed with metal making high vapor pressure halide located at the location
The member to be etched, and the substrate in the chamber.
And between the member to be etched and
A shielding plate having a hole facing the direction of the substrate;
Halo in the chamber between the sealing member and the shielding plate.
Source gas supply means for supplying a source gas containing benzene
And a high-frequency wave for etching the member to be etched.
Raw material supplied inside the chamber by the supply of a number of power
Convert the gas into plasma and generate source gas plasma in the chamber
A plasma generating means for forming a film, and a temperature of the substrate.
A predetermined temperature lower than the temperature of the member to be etched is controlled.
The source gas plasma etches the member to be etched.
Of metal component and raw material gas obtained by chilling
Temperature at which metal components are deposited on the substrate from the body to form a prescribed film
Degree control means and film formation by supplying electromagnetic waves into the chamber
An electromagnetic wave generator that dissociates the source gas generated during the reaction
Having steps. The structure of the third method for forming a metal film is characterized by the following points.
Sign. 24) In a chamber for housing a substrate inside
From multiple types of metal components to form high vapor pressure halides
Of a member to be etched formed of a composite metal
On the other hand, the source gas plug containing halogen in the chamber
Etching the member to be etched with a metal
And precursor gases to form a plurality of types of precursors.
A predetermined temperature and a temperature difference between the temperature of the
To control the metal composition of the plurality of types of precursors.
And depositing a predetermined amount on a substrate to form a predetermined film. The structure of the fourth method for producing a metal film is as follows.
Sign. 25) In a chamber for housing a substrate inside
One or more metal components that make up high vapor pressure halides and 1
Of a composite metal composed of at least
While installing the etching member, the halo in the chamber
The part to be etched with a source gas plasma containing
At least one type of metal component and source gas by etching material
Precursors, one or more precursors of non-metallic components and source gases
Forming a body, the temperature of the member to be etched and the substrate,
By controlling the temperature to a predetermined temperature and temperature difference,
The metal component and the non-metal component are simultaneously deposited on the substrate.
Perform constant film formation. The third method for realizing the third method for producing a metal film is described below.
The configuration of the metal film manufacturing apparatus described above is characterized by the following points. 26) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
Types of metal components that make high vapor pressure halides
A member to be etched formed of a composite metal comprising:
In a chamber between the substrate and the member to be etched
Gas supply to supply halogen-containing material gas to
Means for etching said member to be etched.
Supplied inside the chamber by supply of frequency power
Source gas is converted into plasma and source gas plasma is placed in the chamber.
Plasma generation means for forming the mask and the temperature of the substrate.
A predetermined temperature lower than the temperature of the member to be etched is controlled.
The source gas plasma etches the member to be etched.
Of metal components and raw material gas obtained by
Precipitate multiple metal components from different precursors on a substrate
And temperature control means for performing predetermined film formation. 27) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
Types of metal components that make high vapor pressure halides
A member to be etched formed of a composite metal
A source gas plasma containing a gas is formed outside the chamber.
And the source gas plasma is
Supply into the chamber between the member to be etched
Source gas plasma supply means and the substrate temperature
Control to a predetermined temperature lower than the temperature of the
The source gas plasma etches the member to be etched.
Before the multiple types of metal components and raw material gas obtained by
Precipitate multiple metal components from the precursor onto the substrate
Temperature control means for forming a film; The fourth method for realizing the fourth method for producing a metal film is described below.
The configuration of the metal film manufacturing apparatus described above is characterized by the following points. 28) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
One or more metal components that make high vapor pressure halides
And one or more non-metallic components.
Member to be etched, the substrate and the portion to be etched
Material containing halogen in the chamber between the material
Source gas supply means for supplying a gas;
By supplying high frequency power to etch components
The raw material gas supplied into the chamber is turned into plasma
Plasma plate for forming source gas plasma in chamber
The temperature of the substrate to be etched and the temperature of the substrate.
Temperature to a predetermined temperature lower than
Is obtained by etching the member to be etched
One or more precursors of a metal component and a source gas and a non-metal component
And metal components from one or more precursors
Predetermined film formation by simultaneously depositing non-metal components on the substrate
Temperature control means. 29) A cylindrical chamber for accommodating a substrate
Disposed in a position facing the substrate in this chamber.
One or more metal components that make high vapor pressure halides
And one or more non-metallic components.
Material to be etched and a raw material gas pump containing halogen
The plasma is formed outside the chamber and the raw material
Gas plasma is applied between the substrate and the member to be etched.
Source plasma source to supply into the chamber at
Step and the temperature of the substrate are higher than the temperature of the member to be etched.
The source gas plasma is subjected to
Metal component obtained by etching the etching member
One or more precursors, non-metallic components, and raw materials
Metal and non-metal components from one or more precursors with a gas
Temperature control that deposits a predetermined amount of film on the substrate at the same time
Having control means. The first or second metal film forming method is applied.
Fifth metal film production to realize composite metal thin film
The configuration of the method is characterized by the following points. 30) Any of the above 1) to 10)
In one embodiment, the metal film forming method
The member to be etched is composed of multiple types of metal components.
And the source gas plasma is
Metal component obtained by etching the etching member
Of multiple types of metal from multiple types of precursors
And depositing a predetermined amount on a substrate to form a predetermined film. The fifth method for realizing the fifth method for forming a metal film is described below.
The configuration of the metal film manufacturing apparatus described above is characterized by the following points. 31) Any of the above 11) to 23)
In the metal film manufacturing apparatus according to any one of the above,
The formed member to be etched is composed of multiple types of metal components.
Formed of a composite metal comprising
Metal component obtained by etching an etching member
From multiple types of precursors with different kinds of raw materials
Deposition of components on a substrate to form a predetermined film. Applying the first and second methods for forming a metal film
And 6th metal film production method to realize composite metal thin film production
The constitution of the law is characterized by the following points. 32) Any of the above 1) to 10)
In one embodiment, the metal film forming method
The formed member to be etched has one or more metal components and one or more metal components.
Formed of a composite metal consisting of more than one type of non-metal component,
The source gas plasma etches the member to be etched.
Or more of a metal component and a raw material gas obtained by performing
Precursors, one or more precursors of non-metallic components and source gases
Metal and non-metal components are simultaneously deposited on the substrate from the body
And perform a predetermined film formation. A sixth method for realizing the sixth method for producing a metal film.
The configuration of the metal film manufacturing apparatus described above is characterized by the following points. 33) Any of the above 11) to 23)
In the metal film manufacturing apparatus according to any one of the above,
The formed member to be etched is combined with one or more metal components.
Formed from a composite metal consisting of one or more non-metallic components
And the source gas plasma etches the member to be etched.
Type of metal component and raw material gas obtained by
One or more of the above precursors, non-metallic components and source gases
Simultaneously deposits metal and non-metal components on the substrate from the precursor
And perform a predetermined film formation. [0061] DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.
This will be described in detail based on FIG. <First Embodiment> FIG. 1 shows a first embodiment of the present invention.
FIG. 1 is a schematic side view of a metal film manufacturing apparatus according to an embodiment.
You. As shown in the figure, for example, formed in a cylindrical shape,
Chamber 1 (insulating material) made of ceramics (insulating material)
) Is provided near the bottom of
The substrate 3 is placed. The heater 2 and the coolant flow
Temperature control means 6 provided with a communication means 5;
Is a predetermined temperature (for example, when the substrate 3
(A temperature maintained at 00 ° C to 200 ° C). The upper surface of the chamber 1 is formed as an opening.
Is formed by a copper plate member 7 as a metal member to be etched.
Is closed. Chamber closed by copper plate member 7
The inside of 1 is maintained at a predetermined pressure by a vacuum device 8. Around the copper plate member 7 side of the cylindrical portion of the chamber 1
Is a coil-shaped film wound in the axial direction of the chamber 1
A plasma antenna 9 for film formation is provided.
A matching device 10 and a power supply 11 are connected to the plasma antenna 9.
Power is supplied. Plasma antenna 9 for film formation, matching
A plasma generating means for film formation is constituted by the vessel 10 and the power supply 11.
ing. Obliquely above substrate 3 in the cylindrical portion of chamber 1
A slit-shaped opening 23 is formed at one of the positions.
One end of a cylindrical passage 24 is fixed to the opening 23 of
I have. In the middle of the passage 24, a cylindrical
An excitation chamber 25 is provided, and a coil is provided around the excitation chamber 25.
A round plasma antenna 26 is wound. This plastic
A matching device 27 and a power supply 28 are connected to the zuma antenna 26.
Power supply. Here, the opening 2
3. The accompanying passage 24 and the excitation chamber 25
At the same height, four places around the chamber 1 (in the figure,
Shows only two places. ). Other than passage 24
A flow controller 29 is connected to the end side.
9 into passage 24 via^*Cl to obtain_Twogas
Is supplied. These plasma antenna 26, matching device
27, power supply 28 and flow controller 29
It constitutes a supply means. In such a raw material gas radical supply means,
Then, Cl is introduced into the excitation chamber 25 through the flow controller 29._Twogas
Excitation of electromagnetic wave from plasma antenna 26 while supplying
By entering the inside of the chamber 25, Cl^*To form This
At this time, Cl in the excitation chamber 25 ^*High density
The plasma conditions are adjusted so that like this
Cl formed^*Is formed through the passage 24 during film formation.
It is supplied into the chamber 1. This Cl^*Is absorbed on the substrate 3.
From CuCl (ad) in the wearing state to Cl_TwoGas
Dissociation promotes the film formation reaction. That is, the above equation
The film formation reaction shown in (1) is promoted. The cylindrical portion of the chamber 1 above the support 2
In the chamber 1, a raw material gas containing chlorine (He
At a chlorine concentration of ≤50%, preferably about 10%
Cl_TwoGas) is connected. Noz
The shell 12 is open toward the copper plate member 7. Also this
Source gas is supplied to the nozzle 12 via the flow controller 13.
Is done. The raw material gas is deposited on the wall side in the chamber 1 during film formation.
Is sent from the substrate 3 side to the copper plate member 7 side. On the other hand, the upper part of the cylindrical portion of the chamber 1
Nozzle 3 for supplying a rare gas such as Ar gas into the inside of the chamber 1
0 is connected. Here, the rare gas such as Ar gas is
The flow rate is controlled by the flow rate controller 31 and
Cl in membrane reaction_TwoImproves gas dissociation rate,
It is to promote the response. Therefore, the raw material gas
Excluding He gas contained as a diluent gas
The rare gas of Ne or more is Cl_TwoImprove gas dissociation rate
It can be used as a gas for promoting a film forming reaction. Just dissociation
To improve the efficiency, so to speak, function as a catalyst
For example, Ar gas to Kr gas is preferable, and
Ar gas is optimal in consideration of the surface. The state at the time of film formation in such a metal film production apparatus
The situation is as follows. In addition, at the time of film formation,
The antenna 9 and the plasma antenna 26 are energized. First, the nozzle 12 is inserted into the chamber 1.
While supplying the raw material gas, from the film forming plasma antenna 9
When an electromagnetic wave enters the inside of the chamber 1, Cl_TwoMoth
Ionize_TwoGas plasma (raw material gas plasm
B) Generate 14. This Cl_TwoGas plasma 14
Is adjacent to the film forming plasma antenna 9 in the chamber 1.
Space, that is, in the copper plate member 7 side (upper part) of the chamber 1
Formed in space. Cl_TwoCopper plate member by gas plasma 14
7 undergoes an etching reaction, producing precursor (CuxCly) 15
Is done. At this time, the copper plate member 7 is Cl_TwoGas plasma
14, a predetermined temperature higher than the temperature of the substrate 3 (for example,
(200 ° C. to 400 ° C.). The precursor (Cu) generated inside the chamber 1
xCly) 15 was controlled to a lower temperature than the copper plate member 7.
It is transported to the substrate 3. It is transported to the substrate 3 and adsorbed on it.
The precursor (CuxCly) 15 is expressed by the above-mentioned formula representing a film forming reaction.
Cu is deposited on the substrate 3 by the reaction of (1) and (2).
Let Thus, a Cu thin film 16 is formed on the surface of the substrate 3.
You. At this time, in the excitation chamber 25, Cl^*High effect
By filling the chamber 1
Thus, Cl in the above formula (1) is dissociated to promote the film forming reaction.
Let go. In addition, Ar gas is changed from the nozzle 30.
And supplied into the bath 1 to remove Cl in the formula (2)._TwoSolve gas
Separated to promote the film formation reaction. In the metal film forming apparatus having the above configuration, Cl_Twogas
Since plasma (source gas plasma) 14 is used,
The reaction efficiency is greatly improved, and the film forming speed is increased. Also,
Cl as source gas_TwoBecause gas is used, costs
It can be greatly reduced. Furthermore, temperature control means
6, the substrate 3 is controlled to a temperature lower than that of the copper plate member 7.
Therefore, the residue of impurities such as chlorine in the Cu thin film 16 is reduced.
And a high quality Cu thin film 16 can be produced.
And become possible. <Second Embodiment> FIG. 2 shows a second embodiment of the present invention.
FIG. 1 is a schematic side view of a metal film manufacturing apparatus according to an embodiment.
You. As shown in FIG.
Compared to the first embodiment shown in FIG.
Configuration and related parts are different.
Is the same configuration. Therefore, in the same part as FIG.
Are denoted by the same reference numerals, and duplicate description will be omitted. As shown in FIG. 2, the chamber 41 has a cylindrical shape.
A member made of metal (for example, made of aluminum)
The upper surface is an opening, and the opening is an insulating member (for example,
(Made of ceramics).
Is peeling. Copper made of a ring portion 59 and a protrusion 60
The member 58 to be etched will be described later in detail with reference to FIG.
Is located at a position facing the substrate 3 in the chamber 41 in the circumferential direction.
And a plurality of projections, each of which is a divided portion.
60 projects from the inner peripheral surface side of the chamber 41 toward the center side.
Is out. The plasma forming antenna 49 is a spiral
And is arranged outside of the ceiling plate 47,
The current supplied from the power supply 51 through the matching unit 50
And an electric field is formed, and the member 5 to be etched in the chamber 41 is formed.
Supply inside the chamber 41 in the internal space on the 8th (upper) side
Source gas Cl_TwoGas is converted to plasma and Cl
_TwoA gas plasma 14 is formed. In other words,
Zuma antenna 49, matching device 50 and power supply 51
It constitutes a plasma generating means. As shown in detail in FIG.
The chamber 41 (FIG. 2)
reference. ) Extends to near the radial center and has the same width
(Twelve in the illustrated example) are provided in the circumferential direction.
Have been killed. The protruding portion 60 is aligned with the ring portion 59.
It is attached to the body or detachable. ceiling
Between the plate 47 (see FIG. 2) and the inside of the chamber 41
There is a notch 67 (space) formed between the protrusions 60
It is in a state where it has been done. Ring 59 is grounded
The plurality of protrusions 60 are electrically connected by a ring 59.
At the same potential. At the time of film formation in such a metal film production apparatus,
Are a plasma antenna 49 for film formation and a plasma antenna
26 is energized. As a result, the film forming plasma antenna 4
By inputting an electromagnetic wave from inside 9 into the chamber 41,
Cl_TwoIonize the gas to produce Cl _TwoGas plasma (raw material gas
14), and the first embodiment and
The Cu thin film 16 is formed in a similar manner. However, the shape of the film forming plasma in this embodiment is
The mode at the time of formation is slightly different from the metal film manufacturing apparatus shown in FIG.
Therefore, this will be described with reference to FIG. Shown in the figure
As shown in FIG._TwoGasp
When generating plasma 14 (see FIG. 2),
The direction A of the current of the antenna 49 crosses the protrusion 60
Direction. As a result, the film forming plasma
On the side facing the tenor 49, the induced current B is in the direction shown in FIG.
Occurs. Here, a notch is formed in the member to be etched 58.
Since 67 (space) exists, the induced current B
On the lower surface side of 0, the current of the film forming plasma antenna 49 is
It flows in the same direction a as the direction A. As a result, the substrate 3
When the switching member 58 is viewed, the plasma antenna for film formation
49, ie, on the substrate 3 side, the protrusion 6 which is a conductor.
0 effectively exists even if the film forming plasma antenna 49 is
There is no current in the direction to cancel the current, and the protrusion
Alternation by plasma antenna 49 for film formation below section 60
An electric field can be formed. Moreover, the ring portion 59
The projection 60 is maintained at the same potential by being grounded. This
As a result, the member to be etched 58 which is a conductor is present.
The electromagnetic wave from the film forming plasma antenna 49
The incident light surely enters the chamber 41, and the
Cl downward_TwoStably forming gas plasma 14
Can be. In this embodiment, too, the excitation chamber 25
Is Cl^*Is formed with high efficiency and is formed in the chamber 41.
By replenishing, Cl in the formula (1) is dissociated.
To promote the film formation reaction. Also, from the nozzle 30,
Ar gas is supplied into the chamber 41 to obtain the above equation (2).
Cl_TwoThe gas is dissociated to promote the film formation reaction. In this embodiment, the protrusion 60 is formed by a ring.
By controlling the supply of the source gas without connecting to the
Eliminate plasma instability due to differences in position
Both are possible. <Third Embodiment> As shown in FIG.
This embodiment is for the film formation in the first embodiment shown in FIG.
Remove the plasma antenna 9 and replace it with
Of plasma antenna for film formation on copper plate member 7
It has both functions. Therefore, the power supply 11
High frequency power is supplied to the copper plate member 7 via the matching unit 10
At the same time, the support 2 as a conductive member is grounded.
It has been done. That is, the copper plate member 7 and the support 2
It becomes a pole and Cl_Twogas
A plasma 14 is formed. In the apparatus for manufacturing a metal film according to the present embodiment,
Other configurations are the same as those in FIG.
Numbers are assigned and duplicate descriptions are omitted. In this embodiment, the inside of the chamber 1
The raw material gas is supplied from the nozzle 12 to the
When an electromagnetic wave enters the inside of the chamber 1, Cl_TwoMoth
Is ionized to Cl_TwoGas plasma (raw material gas plastic
Zuma) 14 occurs. As a result, Cl_TwoGas plasma
14 causes an etching reaction in the copper plate member 7,
A body (CuxCly) 15 is generated. At this time, the copper plate member 7
Is lower than the temperature of the substrate 3 by temperature control means (not shown).
Maintained at a high temperature (eg, 200-400 ° C.)
ing. Thus, exactly the same mode as the first embodiment
Thus, a Cu thin film 16 is formed on the surface of the substrate 3. Also in this embodiment, the excitation chamber 25
Is Cl^*Is formed in the chamber 1 with high efficiency.
To dissociate Cl in the above formula (1).
To promote the film formation reaction. Also, from the nozzle 30, A
r gas is supplied into the chamber 1 and the above equation (2)
Cl_TwoThe gas is dissociated to promote the film formation reaction. <Fourth Embodiment> As shown in FIG.
This embodiment is a modification of the third embodiment shown in FIG.
Can be placed, but the member to be etched
Is opposed to the substrate 3 in the chamber 71.
To the opposite electrode at the same time
And a shielding plate 73 of the ground potential to be provided. So
Then, the high-frequency power from the power supply 11 is
While supplying to the copper plate member 7,
Between the copper plate member 72 and the shielding plate 73 in the chamber 71.
So that the source gas is supplied in between to form the plasma
Has become. Here, the shielding plate 73 has a large number of holes 73a.
Formed between the copper plate member 72 and the shielding plate 73
Precursor 15 passes through hole 73a and enters chamber 71.
To reach the space above the substrate 3 at
You. The copper plate member 72 is a hollow frustoconical member.
There is a shielding plate 73 having a hollow shape similar to the copper plate member 72.
It is composed of a frusto-conical member. Therefore, both
The opposing surfaces are parallel and inclined with respect to the substrate 3.
It is arranged at an angle. This allows for etching
Particles falling from the copper plate member 72
Prevents adhesion on the plate 3 and a predetermined precursor
15 can be supplied to the space above the substrate 3. Previous
The particles are shielded by the shielding plate 73 and are above the substrate 3.
Is unlikely to reach the space of
The reason for this is that the vehicle can easily pass through 73a. In the apparatus for manufacturing a metal film according to the present embodiment,
Other configurations are the same as those in FIG.
Numbers are assigned and duplicate descriptions are omitted. In this embodiment, the chamber 71
A raw material gas is supplied from the nozzle 12 to the inside, and the copper plate member 72 is supplied.
Incident on the inside of the chamber 71 from the
l_TwoThe gas is ionized to Cl_TwoGas plasma (raw material gas
(Plasma) 14 is generated. As a result, Cl_TwoGasp
Etching reaction occurs in the copper plate member 72 due to the plasma 14.
First, a precursor (CuxCly) 15 is generated. And this
The precursor (CuxCly) 15 passes through the hole 73 a of the shielding plate 73.
It reaches the space above the substrate 3 in the chamber 71. This
At this time, the copper plate member 72 is
Temperature higher than the temperature of the substrate 3 (for example, 200 ° C.
400 ° C.). Thus, the first implementation
A Cu thin film 16 is formed on the surface of the substrate 3 in the same manner as in the embodiment.
It is formed. Here, the precursor (CuxCly) 15 has holes 73a.
Easily pass between the copper plate member 72 and the shielding plate 73.
Cl formed in the space of^*Of which passes through the hole 73a
Only a small amount reaches the space above the substrate 3. The Cl^*
Of those, those that collided with the shielding plate 73 combine to form Cl_Two
This is because it becomes gas. That is, Cl^*+ Cl^*→ C
l_TwoThe reaction represented by^*Because it disappears
is there. On the other hand, also in this embodiment, the excitation chamber 25
Is Cl^*Is formed with high efficiency and is
By replenishing, Cl in the formula (1) is dissociated.
To promote the film formation reaction. As described above, the copper plate member 72
Cl formed in the space between the shield plate 73 and^*Many
In this embodiment in which the dust is extinguished, Cl^*Supply is more willing
The contribution to promoting the film formation reaction is
Will be remarkable. In this embodiment, the nozzle 30
Supplies an Ar gas into the chamber 71 to obtain the above equation (2)
Cl at_TwoThe gas is dissociated to accelerate the film formation reaction.
You. <Fifth Embodiment> In each of the above embodiments,
Supplies the source gas to the inside of the chamber 1 etc.
Although it has been razed, source gas plasma is directly injected into the chamber.
You may make it supply. Diagram of such a metal film production apparatus
7 will be described in detail. As shown in FIG.
The metal film manufacturing apparatus is the same as the first embodiment shown in FIG.
For the metal film production apparatus, the plasma antenna 9 for film formation is used.
Although there is no major difference, many common configurations
With parts. Therefore, the same parts as those in FIG.
, And duplicate description will be omitted. [0093] As shown in FIG.
For example, a chamber 81 made of ceramics (made of an insulating material)
The upper surface is an opening, and the opening is made of, for example, ceramics.
It is closed by a ceiling plate 100 (made of insulating material).
On the lower surface of the ceiling plate 100, a metal (copper: Cu)
A member 88 is provided, and the member 88 to be etched is
It has a shape. Also, the upper part of the cylindrical portion of the chamber 81
Slip around four places (only two places are shown in the figure).
The opening 89 has a cylindrical shape.
One end of each of the paths 90 is fixed. Way of passage 90
A cylindrical excitation chamber 95 made of an insulator is provided in the center.
Around the excitation chamber 95, a coiled plasma antenna
A matching device 92 is provided on the plasma antenna 91.
And a power supply 93 to supply power. Plasmaa
Plasma is generated by the antenna 91, the matching unit 92, and the power supply 93.
It constitutes a raw means. A flow controller 94 is connected to the other end of the passage 90.
Then, halogen is introduced into the passage 90 through the flow controller 94.
Containing chlorine as the source gas (He has a chlorine concentration of ≤50
%, Preferably about 10% Cl_TwoGas) supplied
Is done. The electromagnetic wave is excited from the plasma antenna 91 to the excitation chamber 95.
By entering the inside of_TwoGas is ionized
Cl_TwoGas plasma (raw material gas plasma) 96 is generated
You. That is, the source gas containing chlorine is supplied to the chamber 81.
Excitation means for exciting in the isolated excitation chamber 95 is configured.
You. Cl_TwoExcited chlorine is opened by generation of gas plasma 96
From the opening 89 to the member to be etched 88 in the chamber 81
(Upper part) and the member to be etched 88 is Cl_TwoMoth
Etched by plasma 96. At the time of film formation in such a metal film production apparatus,
Is Cl in the excitation chamber 95._TwoA gas plasma 96 is formed,
Set the temperature conditions of the etching member 88 and the substrate 3 as specified.
Through the opening 89, the Cl
_TwoGas plasma 96 is introduced. As a result, FIG.
Etched parts as in the case of the metal film production equipment shown in
The material 88 is etched to form the Cu thin film 16 on the substrate 3.
Can be In this embodiment, too, the excitation chamber 25
Is Cl^*Is formed in the chamber 81 with high efficiency.
By replenishing, Cl in the formula (1) is dissociated.
To promote the film formation reaction. Also, from the nozzle 30,
Ar gas is supplied into the chamber 81 and the above equation (2) is satisfied.
Cl_TwoThe gas is dissociated to promote the film formation reaction. Next, the member to be etched is, for example, In and C
u, or for example, CuInS
e_Two, CdS, ZnSe, etc.
A case of forming a thin film will be described. In the same manner as in the preparation of the Cu thin film,
In the production of a thin film (for example, an InCu thin film),
It is considered that such a reaction has occurred. Plasma dissociation reaction; Cl_Two→ 2Cl^*Etching reaction; Cu + Cl^*→ CuCl (g)                         In + Cl^*→ InCl (g)   Adsorption reaction on substrate; CuCl (g) → CuCl (ad)                         InCl (g) → InCl (ad)   Film formation reaction; CuCl (ad) + Cl^*→ Cu + Cl_Two・ ・ ・ ・ ・ ・ (3)               InCl (ad) + Cl^*→ In + Cl_Two・ ・ ・ ・ ・ ・ (4) Where Cl^*Is a Cl radical, (g) is a gas state,
(Ad) represents the adsorption state. As another film formation reaction, Cu thin
According to the equation (2) expected at the time of producing the film,
The reaction is expected to occur as well.       2CuCl (ad) → 2Cu + Cl_Two    ・ ・ ・ ・ ・ (5)       2InCl (ad) → 2In + Cl_Two    ・ ・ ・ ・ ・ (6) In addition, CuInSe containing a nonmetallic element
_Two, CdS, ZnSe, etc.
The non-metallic element in it is Cl^*Is thought to be chlorinated by
You. That is, Cl^*As a result of etching by Se,
Nonmetallic elements such as S form chlorides and become precursors,
To be a constituent element of the thin film. <Sixth Embodiment> FIG. 8 shows a sixth embodiment of the present invention.
FIG. 1 is a schematic side view of a metal film manufacturing apparatus according to an embodiment.
You. As shown in the figure, for example, formed in a cylindrical shape,
Chamber 1 (insulating material) made of ceramics (insulating material)
) Is provided near the bottom of
The substrate 3 is placed. The heater 2 and the coolant flow
Temperature control means 6 provided with a communication means 5;
Is a predetermined temperature (for example, when the substrate 3
(A temperature maintained at 00 ° C to 200 ° C). The upper surface of the chamber 1 is formed as an opening.
Is a member to be etched made of a composite metal of In and Cu
Is closed by the composite metal plate member 101. This
Here, the composite metal plate member 101 has a one-to-one correspondence between In and Cu.
After being uniformly mixed at a certain ratio, it was press-formed into a plate shape.
It is. According to this manufacturing method, the composite metal plate portion can be easily formed.
The material 101 can be manufactured. Others are composite metal plates
The right half of the member 101 is made of In, and the left half is made of Cu.
It may be made into a split type formed by the above. This manufacturing method
According to the above, the composition control of the thin film to be formed can be easily performed.
Become. Chamber closed by composite metal plate member 101
The inside of 1 is maintained at a predetermined pressure by a vacuum device 8. The composite metal plate member 101 in the cylindrical portion of the chamber 1
A coil wound around the chamber 1 in the axial direction
A film-shaped plasma antenna 9 is provided.
A matching device 10 and a power supply 1
1 is connected to supply power. Plasma antenna for film formation
, A matching device 10 and a power supply 11
Constitutes a stage. Obliquely above substrate 3 in the cylindrical portion of chamber 1
A slit-shaped opening 23 is formed at one of the positions.
One end of a cylindrical passage 24 is fixed to the opening 23 of
I have. In the middle of the passage 24, a cylindrical
An excitation chamber 25 is provided, and a coil is provided around the excitation chamber 25.
A round plasma antenna 26 is wound. This plastic
A matching device 27 and a power supply 28 are connected to the zuma antenna 26.
Power supply. Here, the opening 2
3. The accompanying passage 24 and the excitation chamber 25
At the same height, four places around the chamber 1 (in the figure,
Shows only two places. ). Other than passage 24
A flow controller 29 is connected to the end side.
9 into passage 24 via^*Cl to obtain_Twogas
Is supplied. These plasma antenna 26, matching device
27, power supply 28 and flow controller 29
It constitutes a supply means. In such a raw material gas radical supply means,
Then, Cl is introduced into the excitation chamber 25 through the flow controller 29._Twogas
Excitation of electromagnetic wave from plasma antenna 26 while supplying
By entering the inside of the chamber 25, Cl^*To form This
At this time, Cl in the excitation chamber 25 ^*High density
The plasma conditions are adjusted so that like this
Cl formed^*Is formed through the passage 24 during film formation.
It is supplied into the chamber 1. This Cl^*Is absorbed on the substrate 3.
Metal chloride (CuCl, InCl) in an attached state
From Cl_TwoThe gas is dissociated to accelerate the film forming reaction.
That is, the film formation reaction represented by the above equations (3) and (4) is promoted.
Let The cylindrical portion of the chamber 1 above the support 2
In the chamber 1, a raw material gas containing chlorine (He
At a chlorine concentration of ≤50%, preferably about 10%
Cl_TwoGas) is connected. Noz
The shell 12 is open toward the composite metal plate member 101.
In addition, raw material is supplied to the nozzle 12 through a flow controller 13.
Gas is delivered. The source gas is supplied to the chamber 1 at the time of film formation.
Inside the composite metal plate member 101 from the substrate 3 side along the wall surface side
Sent to the side. On the other hand, the upper part of the cylindrical portion of the chamber 1 is
Nozzle 3 for supplying a rare gas such as Ar gas into the inside of the chamber 1
0 is connected. Here, the rare gas such as Ar gas is
The flow rate is controlled by the flow rate controller 31 and the above equations (5) and (6)
Cl in the film formation reaction shown in _TwoImproved gas dissociation rate
To promote the film formation reaction. Accordingly
He gas contained as a diluent gas in the source gas
Except for rare gases whose mass is equal to or greater than Ne, Cl_TwoGas dissociation rate
Can be used as a gas to promote
You. However, as a catalyst to improve the dissociation rate,
Considering the performance, Ar gas to Kr gas are preferable,
Ar gas is optimal in consideration of cost. A state at the time of film formation in such a metal film manufacturing apparatus.
The situation is as follows. In addition, at the time of film formation,
The antenna 9 and the plasma antenna 26 are energized. First, the nozzle 12 is inserted into the chamber 1.
While supplying the raw material gas, from the film forming plasma antenna 9
When an electromagnetic wave enters the inside of the chamber 1, Cl_TwoMoth
Ionize_TwoGas plasma (raw material gas plasm
B) Generate 14. This Cl_TwoGas plasma 14
Is adjacent to the film forming plasma antenna 9 in the chamber 1.
Space, that is, the side of the composite metal plate member 101 of the chamber 1
It is formed in the (upper) space. Cl_TwoComposite metal by gas plasma 14
An etching reaction occurs in the plate member 101, and the precursor 102
Generated. At this time, the composite metal plate member 101 has Cl_Two
A predetermined temperature higher than the temperature of the substrate 3 by the gas plasma 14
Degrees (eg, 200 ° C to 400 ° C)
You. Here, the precursor 102 is made of Cu_x1Cl_y1And In
_x2Cl_y2Consists of Precursor 10 generated inside chamber 1
2 is controlled to a lower temperature than the composite metal plate member 101.
The substrate 3 is transferred to the substrate 3. Conveyed to substrate 3 and adsorbed on it
The precursor 102 thus obtained has the above formula (3) representing the film formation reaction.
Cu and In are deposited on the substrate 3 by the reaction (6).
You. Thus, the composite of Cu and In is
A composite metal thin film 103 is generated. At this time, in the excitation chamber 25, Cl^*High effect
By filling the chamber 1
In the above formulas (3) and (4), Cl is dissociated to form a film.
Promote response. Ar gas is supplied from the nozzle 30.
C is supplied into the chamber 1 and the C in the above equations (5) and (6)
l_TwoThe gas is dissociated to promote the film formation reaction. In the metal film forming apparatus having the above configuration, Cl_TwoMoth
Splasma (source gas plasma) 14 is used.
Therefore, the reaction efficiency is greatly improved, and the film forming speed is increased. Ma
Also, Cl was used as a source gas._TwoBecause gas is used, cost
Can be greatly reduced. In addition, temperature control
By using the means 6, the substrate 3 is set lower than the composite metal plate member 101.
Temperature is controlled so that salt in the composite metal thin film 103
Residue of impurities such as silicon
The composite metal thin film 103 can be generated. Further, in the metal film forming apparatus according to the present embodiment,
Sets the composite metal plate member 101 to CuInSe._Two, CdS, Z
By using a composite metal such as nSe,
It is also possible to produce a thin film of a composite metal. <Seventh Embodiment> FIG. 9 shows a seventh embodiment of the present invention.
FIG. 1 is a schematic side view of a metal film manufacturing apparatus according to an embodiment.
You. As shown in FIG.
A plasma antenna according to the sixth embodiment shown in FIG.
Configuration and related parts are different.
Is the same configuration. Therefore, in the same part as FIG.
Are denoted by the same reference numerals, and duplicate description will be omitted. As shown in FIG. 9, the chamber 41 has a cylindrical shape.
A member made of metal (for example, made of aluminum)
The upper surface is an opening, and the opening is an insulating member (for example,
(Made of ceramics).
Is peeling. Consists of a ring 106 and a projection 107
The composite metal member 105 will be described later in detail with reference to FIG.
Is located at a position facing the substrate 3 in the chamber 41 in the circumferential direction.
And a plurality of projections, each of which is a divided portion.
107 is from the inner peripheral surface side of the chamber 41 toward the center side
It is protruding. The film forming plasma antenna 49 is a spy
It is formed into a ral shape and is disposed outside the ceiling plate 47.
To the current supplied from the power supply 51 through the matching unit 50.
By forming an electric field, the composite metal member 10 of the chamber 41 is formed.
Supply inside this chamber 41 in the internal space on the 5th (upper) side
Source gas Cl_TwoGas is converted to plasma and Cl
_TwoA gas plasma 14 is formed. In other words,
Zuma antenna 49, matching device 50 and power supply 51
It constitutes a plasma generating means. As shown in detail in FIG.
A chamber 41 (see FIG.
See No. 9. ) Extends to near the center in the radial direction and has the same width
Projections 107a to 107l in the circumferential direction
(12 in the example). Projections 107a to 10
7l is integrated with or removed from the ring portion 106.
It is attached freely. Here, the protrusion 107
a, e, and i are made of Cu (copper), and the protrusions 107c, g, and k are
In (indium), protrusions 107b, d, f, h,
j and l are made of Se (selenium). That is, CuIn
Se_TwoAre formed in accordance with the composition ratio. Heaven
Between the well 47 (see FIG. 9) and the inside of the chamber 41
Is a notch 6 formed between the protrusions 107a to 107l.
7 (space) exists. Ring part 10
6 is grounded, and a plurality of projections 107a to 107
1 are electrically connected at the ring 106 and have the same potential.
ing. At the time of film formation in such a metal film production apparatus,
Are a plasma antenna 49 for film formation and a plasma antenna
26 is energized. As a result, the film forming plasma antenna 4
By inputting an electromagnetic wave from inside 9 into the chamber 41,
Cl_TwoIonize the gas to produce Cl _TwoGas plasma (raw material gas
14), and the sixth embodiment is used.
The composite metal thin film 103 is formed in a similar manner. In the present embodiment, the composite metal thin film 103 is made of non-gold
CuInSe containing genus elements_TwoComposite metal thin
It is a film, but only the metal element shown in the sixth embodiment.
It is thought that film formation similar to the formation of a composite metal film consisting of
Can be That is, not only Cu and In metal elements,
Se, which is a nonmetallic element, is also Cl^*Precursor by chlorination by
Forms chloride, which is transported to the substrate to form a thin film.
It is thought that. In this embodiment, too, the excitation chamber 25
Is Cl^*Is formed with high efficiency and is formed in the chamber 41.
By replenishing, Cl in the above formulas (3) and (4)
To promote the film formation reaction. In addition,
Chlorinated Se also dissociates Cl and accelerates the film formation reaction.
It is considered to be. In addition, Ar gas is output from the nozzle 30.
Is supplied into the chamber 41 and the above equations (5) and (6) are used.
R Cl_TwoThe gas is dissociated to promote the film formation reaction. Further, in the metal film forming apparatus according to the present embodiment,
Is a composite metal member 105 made of CdS, ZnSe, InCu, etc.
By manufacturing with these composite metals,
It is also possible to produce a thin film. <Eighth Embodiment> As shown in FIG.
This embodiment is different from the sixth embodiment shown in FIG.
The film plasma antenna 9 is removed, and
Plassing for film formation on the composite metal plate member 101 which is a
The antenna combines the functions of the antennas. For this reason,
The high-frequency power from the power supply 11 is applied to the composite
Supplied to the metal plate member 101, and
The support 2 is configured to be grounded. That is, composite
The metal plate member 101 and the support 2 serve as both electrodes and
Cl between the two in the bath 1_TwoShape gas plasma 14
Is to be implemented. Here, the composite metal plate member 10
Numeral 1 is formed of a composite metal of In and Cu. In the apparatus for manufacturing a metal film according to the present embodiment,
Other configurations are the same as those in FIG.
Numbers are assigned and duplicate descriptions are omitted. In this embodiment, the inside of the chamber 1
Material gas is supplied from the nozzle 12 to the
Injecting electromagnetic waves into the chamber 1 from 101
And Cl_TwoThe gas is ionized to Cl_TwoGas plasma
(Source gas plasma) 14 is generated. As a result, Cl
_TwoThe composite metal plate member 101 is etched by the gas plasma 14.
The etching reaction occurs, and the precursor 102 is generated. here
The precursor 102 is made of Cu_x1Cl_y1And In_x2Cl_y2
Consists of At this time, the composite metal plate member 101 is
Temperature higher than the temperature of the substrate 3 by the temperature control means
(For example, 200 ° C. to 400 ° C.).
Thus, the substrate 3 is provided in exactly the same manner as in the sixth embodiment.
A composite metal thin film 103 composed of Cu and In on the surface of
It is formed. In this embodiment, too, the excitation chamber 25
Is Cl^*Is formed in the chamber 1 with high efficiency.
By supplying Cl in the above formulas (3) and (4),
Dissociates to promote the film formation reaction. Also, from the nozzle 30
Is obtained by supplying Ar gas into the chamber 1 and using the above equation (5),
Cl in (6)_TwoDissociate gas to accelerate film formation reaction
Let In the metal film manufacturing apparatus according to the present embodiment,
Sets the composite metal plate member 101 to CuInSe._Two, CdS, Z
By using a composite metal such as nSe,
It is also possible to produce a thin film of a composite metal. <Ninth Embodiment> The sixth to eighth embodiments will be described.
In the embodiment, the source gas is supplied to the inside of the chamber 1 or the like.
This was turned into plasma, but the raw material gas was directly
Splasma may be supplied. Such a metal film
The manufacturing apparatus will be described in detail with reference to FIG. As shown in the figure
The apparatus for manufacturing a metal film according to the present embodiment is the sixth apparatus shown in FIG.
The metal film manufacturing apparatus according to the embodiment, etc.
Although there is a great difference in not having a plasma antenna 9 etc.
Has many common components. Therefore, it is the same as FIG.
Portions are given the same numbers, and duplicate descriptions are omitted. [0128] As shown in FIG.
For example, a chamber 8 made of ceramics (made of insulating material)
1 has an opening, and the opening is, for example, a ceramic.
Is covered with a ceiling plate 100 made of stainless steel (made of insulating material).
You. A composite metal plate member 101 is provided on the lower surface of the ceiling plate 100.
Therefore, the composite metal plate member 101 has a conical shape.
Here, the composite metal plate member 101 is a composite metal of In and Cu.
The genus is formed. Further, the periphery 4 of the upper part of the cylindrical portion of the chamber 81
In the places (only two places are shown in the figure), slit-like
An opening 89 is formed, and a cylindrical passage 90 is formed in the opening 89.
Are fixed at one end. In the middle of passage 90
Is provided with a cylindrical excitation chamber 95 formed of an insulator.
A coiled plasma antenna 91 is provided around the chamber 95.
The plasma antenna 91 has a matching device 92 and a power supply.
The power supply is performed by being connected to 93. Plasma antenna 9
1. The plasma generating means is provided by the matching unit 92 and the power supply 93.
Make up. A flow controller 94 is connected to the other end of the passage 90.
Then, halogen is introduced into the passage 90 through the flow controller 94.
Containing chlorine as the source gas (He has a chlorine concentration of ≤50
%, Preferably about 10% Cl_TwoGas) supplied
Is done. The electromagnetic wave is excited from the plasma antenna 91 to the excitation chamber 95.
By entering the inside of_TwoGas is ionized
Cl_TwoGas plasma (raw material gas plasma) 96 is generated
You. That is, the source gas containing chlorine is supplied to the chamber 81.
Excitation means for exciting in the isolated excitation chamber 95 is configured.
You. Cl_TwoExcited chlorine is opened by generation of gas plasma 96
From the mouth 89 to the composite metal plate member 101 in the chamber 81
(Upper part), and the composite metal plate member 101_TwoMoth
Etched by plasma 96. At the time of film formation in such a metal film production apparatus,
Is Cl in the excitation chamber 95._TwoA gas plasma 96 is formed,
Set the temperature conditions of the composite metal plate member 101 and the substrate 3 as specified.
Through the opening 89, the Cl
_TwoGas plasma 96 is introduced. As a result, FIG.
Composite metal plate member as in the case of the metal film production apparatus shown in
101 is etched, and Cu and In
Can be formed. In this embodiment, also in the excitation chamber 25,
Is Cl^*Is formed in the chamber 81 with high efficiency.
By replenishing, Cl in the above formulas (3) and (4)
To promote the film formation reaction. In addition, nozzle 30
Supplied Ar gas into the chamber 81 and
Cl in (5) and (6)_TwoDissociate gas to form film
Promote. In the metal film forming apparatus according to the present embodiment,
Sets the composite metal plate member 101 to CuInSe._Two, CdS, Z
By using a composite metal such as nSe,
It is also possible to produce a thin film of a composite metal. The source gas radio in each of the above embodiments
The coil supply means is a coil wound around the cylindrical excitation chamber 25.
A plasma antenna 26 in the shape of
l^*To form this Cl^*Refill inside chamber 1 etc.
However, the present invention is not limited to this. material
Gas (eg, Cl_TwoGas) radicals (eg, Cl
^*) Is formed separately and supplied inside the chamber.
It should just be able to do. For example,
A source gas radical supply means having the above configuration is conceivable. 1) The raw material gas flows through the chamber
A microwave supply means in a cylindrical passage through which the microwave passes;
The microwave generated by the microwave supply means of
It converts source gas into plasma. This is, for example,
It can be easily configured by using TRON
You. In this case, the frequency is about 2.45 (GHz)
Can be used. By the way, each of the above embodiments
And the frequency supplied to the plasma antenna 26 is 13.56.
(MHz). Therefore, when using microwaves,
Can form higher density source gas radicals.
Wear. 2) A cylindrical passage communicating with the inside of the chamber
Heats the flowing raw material gas to thermally dissociate it
Having heating means for heating. As such a heating means,
A heater made of filament is conceivable.
Temperatures over 1500 ° C required for thermal dissociation with heaters are easy
can get. Therefore, the most inexpensive source gas radical supplement
Supply means can be configured. 3) A cylindrical passage communicating with the chamber is
An electromagnetic wave such as a laser beam or an electron beam is supplied to the flowing raw material gas.
Has an electromagnetic wave generating means for dissociating this source gas
Things. This allows you to specify the wavelength of the laser light or electron beam.
By fixing the desired radical (for example, Cl 2
^*) Can be generated with high efficiency. That is,
The desired radical can be selectively generated with high efficiency
You. In each of the above embodiments, the above equation is used.
In order to promote the film forming reaction of (2) and (5), (6)
Cl_TwoAs a means to improve the gas dissociation rate,
Although the supply means was provided, instead of this, inside the chamber 1 etc.
Supplying electromagnetic wave to Cl_TwoGas can be dissociated
No. That is, the source gas (for example, C
l_Two) Are dissociated, such as 200 n
If it is configured to supply laser light of m to 350 nm,
good. Such a configuration is used for excimer laser, YAG laser, etc.
Using a laser oscillator that emits ultraviolet laser light
By doing so, it can be easily configured. Further, the above equations (2), (5) and (6)
To increase the dissociation rate to accelerate the film formation reaction, the following
Control of such plasma conditions is effective. 1) Raw material gas (for example, Cl_TwoOf gas)
Reduce your salary. In this case, the amount of the precursor is also reduced
It is necessary to sacrifice the deposition rate to some extent. Just principle
It is possible. For example, consider the case of each of the above embodiments.
In consideration of the film formation rate, the standard supply amount
A reduction of about 0% is appropriate. That is, Cl_TwoGas standard
When supply amount is 50 (sccm), about 45 (ccm)
It is appropriate to reduce to 2) Plasma is generated inside the chamber 1 or the like.
Of high frequency power to the plasma antenna for film formation
Increase the amount. For example, if the standard power is 22 (W / c
m^Two) In the case of 30 (W / cm^Two). The metal film forming apparatus according to each of the above embodiments
Promotes the film formation reaction by the above equations (1), (3) and (4).
Requirements and the formulas (2) and (5), (6)
A device that simultaneously satisfies both requirements for promoting the membrane reaction
However, of course, either one of the film formation reactions is promoted.
Such a device may be used. In addition, the above equation (2) and
(5) To increase the dissociation rate to promote the film formation reaction by (6)
Ar gas was separately supplied to increase the
This is based on a source gas (eg, Cl_TwoGas) as diluent gas
If He gas is used, replace this He gas.
Can also be used. In this case, dilution of the source gas
Function as a gas and for improving the dissociation rate
It also has a function as a film formation promoting gas. In each of the above embodiments, the raw materials
As a gas, Cl diluted with He_TwoExplanation using gas as an example
But Cl_TwoUse gas alone or apply HCl gas.
It is also possible. If HCl gas is applied,
In the plasma, HCl gas plasma is generated.
Precursor generated by etching the member to be etched
Is CuxCly. In addition, the etched metal
In the case of a member, the precursor is Cu_x1Cl_y1, In_x2Cl_y2,
Se and S chlorides. Therefore, the source gas is
Any gas containing chlorine may be used, such as HCl gas and Cl._Twogas
It is also possible to use a mixed gas of In addition, general
Is not limited to chlorine, but any halogen gas
It can be used as a source gas. The member to be etched is not limited to copper.
For example, high vapor pressures of Ta, Ti, W, Zn, In, Cd, etc.
The same can be used if it is a metal that forms a logenide.
You. In this case, the precursor is Ta, Ti, W, Zn, In,
It becomes chloride (halide) such as Cd, and the surface of the substrate 3
The thin films formed at this time are Ta, Ti, W, Zn, In, and Cd.
And so on. Furthermore, composite gold containing a plurality of these metals
Metal, for example, an alloy of In and Cu is used as the member to be etched.
You can also. The metal may be a non-metal such as S, Se, etc.
Composite metal containing element, for example, CuInSe_Two, CdS,
An alloy such as ZnSe can be used as the member to be etched.
You. In this case, the precursors are salts of metal chlorides and non-metallic elements.
And a composite metal thin film is formed on the surface of the substrate 3.
It is. In each of the above embodiments, the source gas
Although the case of replenishing radicals has been described,
Depending on the circumstances, it is not always necessary to supply radicals in the source gas
No need. However, radicals in the separately formed source gas
To improve film formation speed and film quality
Can be achieved. [0147] The present invention will be described specifically with the above embodiments.
As described above, the invention described in [Claim 1] has a substrate inside.
High vapor pressure halide metal in the containing chamber
While the formed member to be etched is provided,
A predetermined temperature and a temperature difference between the temperature of the
To control the amount of halogen contained in the chamber.
Etch the member to be etched with the source gas plasma
To form a precursor of the metal component and the source gas.
The metal component of the precursor is deposited on the substrate to form a predetermined film.
In the method for producing a metal film, the
And the source gas radicals are introduced into the chamber.
Before the above, which is in a suction state on the substrate by replenishment
Extract the raw material gas from the precursor and deposit the metal component on the substrate
And perform a predetermined film formation,
The reaction efficiency is greatly improved, and the film forming speed is increased. Ma
Since halogen gas is used as the source gas,
Cost can be greatly reduced, and the desired
Since the film can be formed, impurities such as chlorine
High quality metal thin film
Basic functions and effects that can be generated
Play. Furthermore, the formation of radicals in the separately formed source gas
Can accelerate film formation by promoting film formation.
Wear. The invention described in [Claim 2] is based on [Claim 2
1] The method for producing a metal film according to item 1), wherein
Zikaru circulates through a cylindrical passage communicating with the chamber.
A high-frequency electric field is applied to the raw material gas to push the raw material gas.
Since it is obtained by plasming, it is described in [Claim 1]
The effect of the present invention can be obtained with a simple device. The invention described in [Claim 3] is based on [Claim 3
1] The method for producing a metal film according to item 1), wherein
Zikaru circulates through a cylindrical passage communicating with the chamber.
A microwave is supplied to the source gas to generate a plasma.
(Claim 2)
Higher frequency electromagnetic waves can be used than the invention,
The raw material gas radicals can be obtained with high density and high efficiency.
Wear. The invention described in [Claim 4] is based on [Claim 4
1] The method for producing a metal film according to item 1), wherein
Zikaru circulates through a cylindrical passage communicating with the chamber.
Since the raw material gas is obtained by thermal dissociation by heating,
The effect of the invention described in 1) can be obtained at the lowest cost.
Wear. The invention described in [Claim 5] is based on [Claim 5]
1] The method for producing a metal film according to item 1), wherein
Zikaru circulates through a cylindrical passage communicating with the chamber.
Supply an electromagnetic wave such as a laser beam or an electron beam to the source gas.
Is obtained by dissociating the raw material gas
Select and fix the wavelength to select the desired radical.
Alternatively, it can be obtained with high efficiency. As a result, [Claim
The effect of the invention described in 1) may be remarkable.
it can. The invention described in [Claim 6] has an internal
Gold making high vapor pressure halide in the chamber containing the plate
While the member to be etched formed of metal is provided,
The temperature of the etching member and the substrate is set to a predetermined temperature and temperature.
By controlling to a difference in degree, halogen in the chamber
The member to be etched with a source gas plasma containing
Etching to form precursor of metal component and source gas
Then, the metal component of the precursor is deposited on the substrate to obtain a predetermined composition.
Generated during the film formation reaction in the metal film manufacturing method for forming a film
Plasma conditions to increase the dissociation rate of
Control, so the same basics as the invention described in [Claim 1]
Besides the general action and effect, the increase in the dissociation rate of the raw material gas
Film formation can be promoted to increase the speed. The invention described in [Claim 7] is based on [Claim 7]
6] In the metal film forming method described in 6), the plasma conditions
Control is achieved by reducing the supply of source gas.
Therefore, the effect of the invention described in [Claim 6] is most
It can be easily realized. The invention described in [Claim 8] is based on [Claim 8]
6] In the metal film forming method described in 6), the plasma conditions
Is controlled by high frequency power for forming source gas plasma.
This is achieved by increasing the amount of power
The effect of the invention described in claim 6 can be obtained by reducing the film formation rate.
It can be easily realized. The invention described in [Claim 9] is based on [Claim 9]
6] In the metal film forming method described in 6), the plasma conditions
Control of rare gas whose mass is more than Ne in addition to the source gas
Noble gas is realized by supplying it into the chamber.
Functions as a catalyst to increase the dissociation rate,
Dragons can be increased. The invention described in [Claim 10] is based on [Claim 10]
Item 6] The method for producing a metal film according to Item 6, wherein
The control of the case is to supply electromagnetic waves to the chamber and
Is realized by dissociating the raw material gas supplied to
Therefore, the dissociation of source gas is highly effective by the energy of electromagnetic waves
Rate. [0157] According to the invention described in claim 11, the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
A member to be etched made of metal to be made,
Halogen is present in the chamber between the member to be etched.
Source gas supply means for supplying a source gas containing
In order to etch the member to be etched, a high frequency
Source gas supplied into the chamber by power supply
Into plasma and form source gas plasma in the chamber
A plasma generating means for forming a film, and the temperature of the substrate
Control to a predetermined temperature lower than the temperature of the
The source gas plasma etches the member to be etched.
From the precursor of the metal component and the source gas
Temperature control means for depositing metal components on the substrate and forming a prescribed film
Step and replenish the radicals of the source gas into the chamber
Source gas radical replenishment means for
Reaction efficiency is greatly improved by plasma
Be faster. Also, using halogen gas as the source gas
Cost can be greatly reduced and temperature control
Since a more desired film formation can be performed,
High quality with less residual impurities such as chlorine
Basic metal thin film
Get action and effect. In addition, such actions and effects are so-called
It can be obtained with an inductively coupled device. In addition, separately
Promote film formation by the action of radicals in the formed source gas
Its speed can be improved. [0158] According to the invention described in [Claim 12], the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
The member to be etched made of metal to be
When the source gas plasma is formed outside the chamber,
In both cases, the source gas plasma is applied to the substrate and the substrate to be etched.
Raw material gas supplied into the chamber between the
Plasma supply means and the substrate temperature
The raw material gas is controlled by controlling the temperature to a predetermined temperature lower than the temperature of the member.
Splasma etches the workpiece
Metal component from the precursor of the obtained metal component and source gas
Temperature control means for depositing on the substrate to form a predetermined film;
A raw material for supplying radicals of the raw material gas into the chamber
Since it has gas radical replenishing means, [Claim 11]
The same operation and effect as the invention described in
The so-called plasma is supplied into the chamber.
It can be realized by a remote plasma type apparatus. According to a thirteenth aspect of the present invention, the substrate is
A cylindrical chamber to be accommodated, and
High vapor pressure c located at a position avoiding the position facing the plate
A member to be etched formed of a metal that forms a logenide,
In the chamber, the substrate and the member to be etched
It has a hole that is arranged between and facing the substrate
Between the shielding member and the member to be etched and the shielding plate.
Supply a halogen-containing source gas into the chamber at
Source gas supply means for supplying the material to be etched, and
To supply high frequency power to the chamber
The raw material gas supplied to the inside of the
Plasma generator for forming source gas plasma in the chamber
The step and the temperature of the substrate from the temperature of the member to be etched.
And the source gas plasma is controlled to a predetermined temperature
Metal obtained by etching the member to be etched
Metal component is deposited on the substrate from the precursor of the component and the source gas.
Temperature control means for performing a predetermined film formation,
Source gas radical to supply radicals into the chamber
Since it has a supply means,
It has the same effect as Ming. In addition, the etched substrate
Particles that come off and fall off the etching member
Certain precursors are used to prevent adherence to the
Can be supplied to the space above. Especially before here
The precursor easily passes through the holes in the shielding plate, but
Of the radicals formed in the space between the material and the shielding plate,
Only a small amount passes through the hole to reach the space above the substrate
In consideration of the above, the supply of the radicals promotes the film formation reaction.
The contribution to the progress can be significant. The invention described in [Claim 14] is based on [Claim 14
Any of [11], [12] or [13]
In the metal film manufacturing apparatus described in one, the raw material gas
The replenishing means of the cull communicates the source gas with the inside of the chamber.
High-frequency power is applied to the coil wound around the cylindrical passage
To supply the source gas
Is converted into plasma, so that [Claim 11] to
[Claim 13]
The feeding means can be realized with a simple configuration. The invention described in [Claim 15] is based on [Claim 15]
Any of [11], [12] or [13]
In the metal film manufacturing apparatus described in one, the raw material gas
The replenishing means of the cull communicates the source gas with the inside of the chamber.
A microwave supply means in a cylindrical passage through which the microwave passes;
The microwave generated by the microwave supply means of
Since the raw material gas is converted into plasma, [Claim 1
(1) The raw material gas radio according to the invention described in (13).
The replenishing means for the cull according to the present invention described in [Claim 14]
Can be made more efficient than the above. The invention described in [Claim 16] relates to [Claim
Any of [11], [12] or [13]
In the metal film manufacturing apparatus described in one, the raw material gas
The cull replenishing means is provided with a cylindrical passage communicating with the chamber.
Heats the flowing raw material gas to thermally dissociate it
[Claim 11] to [Claim
Item 13] Means for replenishing source gas radicals according to the invention described in [13]
Can be constructed at the lowest cost. The invention described in [Claim 17] is based on [Claim 17]
Any of [11], [12] or [13]
In the metal film manufacturing apparatus described in one, the raw material gas
The cull replenishing means is provided with a cylindrical passage communicating with the chamber.
An electromagnetic wave such as a laser beam or an electron beam is supplied to the flowing raw material gas.
Has an electromagnetic wave generating means for dissociating this source gas
Therefore, it is described in [Claim 11] to [Claim 13].
The means for replenishing the raw material gas radical of the invention
Can be selectively formed with high efficiency. [0164] In the invention described in claim 18, the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
A member to be etched made of metal to be made,
Halogen is present in the chamber between the member to be etched.
Source gas supply means for supplying a source gas containing
In order to etch the member to be etched, a high frequency
Source gas supplied into the chamber by power supply
Into plasma and form source gas plasma in the chamber
A plasma generating means for forming a film, and the temperature of the substrate
Control to a predetermined temperature lower than the temperature of the
The source gas plasma etches the member to be etched.
From the precursor of the metal component and the source gas
Temperature control means for depositing metal components on the substrate and forming a prescribed film
In addition to the step and the source gas, a rare gas having a mass of Ne or more is charged.
Noble gas supply means for supplying the gas into the chamber.
In any inductively coupled device, the dissociation rate of
The dissociation rate is satisfactorily increased by the catalytic function of the rare gas
As a result, the film formation reaction can be promoted. The invention described in [Claim 19] is characterized in that the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
The member to be etched made of metal to be
When the source gas plasma is formed outside the chamber,
In both cases, the source gas plasma is applied to the substrate and the substrate to be etched.
Raw material gas supplied into the chamber between the
Plasma supply means and the substrate temperature
The raw material gas is controlled by controlling the temperature to a predetermined temperature lower than the temperature of the member.
Splasma etches the workpiece
Metal component from the precursor of the obtained metal component and source gas
Temperature control means for depositing on a substrate to form a predetermined film;
In addition to the source gas, a rare gas whose mass is Ne or more
And a rare gas supply means for supplying
In a plasma-type system, the dissociation rate of the source gas
The dissociation rate is satisfactorily increased by the catalytic function of noble gas.
Can promote the film formation reaction. In the invention described in claim 20, the substrate is
A cylindrical chamber to be accommodated, and
High vapor pressure c located at a position avoiding the position facing the plate
A member to be etched formed of a metal that forms a logenide,
In the chamber, the substrate and the member to be etched
It has a hole that is arranged between and facing the substrate
Between the shielding member and the member to be etched and the shielding plate.
Supply a halogen-containing source gas into the chamber at
Source gas supply means for supplying the material to be etched, and
To supply high frequency power to the chamber
The raw material gas supplied to the inside of the
Plasma generator for forming source gas plasma in the chamber
The step and the temperature of the substrate from the temperature of the member to be etched.
And the source gas plasma is controlled to a predetermined temperature
Metal obtained by etching the member to be etched
Metal component is deposited on the substrate from the precursor of the component and the source gas.
Temperature control means for forming a predetermined film by
Then, a rare gas having a mass of more than Ne is supplied into the chamber.
Gas supply means, so that the
So that the tickle does not fall on the substrate.
13] in the same apparatus as described in
Due to the catalytic function of the rare gas for the dissociation rate,
The film formation reaction can be promoted by increasing the separation rate. According to a twenty-first aspect of the present invention, the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
A member to be etched made of metal to be made,
Halogen is present in the chamber between the member to be etched.
Source gas supply means for supplying a source gas containing
In order to etch the member to be etched, a high frequency
Source gas supplied into the chamber by power supply
Into plasma and form source gas plasma in the chamber
A plasma generating means for forming a film, and the temperature of the substrate
Control to a predetermined temperature lower than the temperature of the
The source gas plasma etches the member to be etched.
From the precursor of the metal component and the source gas
Temperature control means for depositing metal components on the substrate and forming a prescribed film
And supplying electromagnetic waves into the chamber to accompany the film formation reaction.
Electromagnetic wave generating means for dissociating the generated source gas
In a so-called inductively coupled device,
By dissociating the raw material gas generated by the
Thus, a film formation reaction can be promoted. According to the invention described in claim 22, the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
The member to be etched made of metal to be
When the source gas plasma is formed outside the chamber,
In both cases, the source gas plasma is applied to the substrate and the substrate to be etched.
Raw material gas supplied into the chamber between the
Plasma supply means and the substrate temperature
The raw material gas is controlled by controlling the temperature to a predetermined temperature lower than the temperature of the member.
Splasma etches the workpiece
Metal component from the precursor of the obtained metal component and source gas
Temperature control means for depositing on the substrate to form a predetermined film;
When electromagnetic waves are supplied into the chamber, the
Electromagnetic wave generating means for dissociating the raw material gas
In a remote plasma system,
Dissociation of source gas generated by membrane reaction with electromagnetic waves
Thereby, the film formation reaction can be promoted. According to the twenty-third aspect of the present invention, the substrate is
A cylindrical chamber to be accommodated, and
High vapor pressure c located at a position avoiding the position facing the plate
A member to be etched formed of a metal that forms a logenide,
In the chamber, the substrate and the member to be etched
It has a hole that is arranged between and facing the substrate
Between the shielding member and the member to be etched and the shielding plate.
Supply a halogen-containing source gas into the chamber at
Source gas supply means for supplying the material to be etched, and
To supply high frequency power to the chamber
The raw material gas supplied to the inside of the
Plasma generator for forming source gas plasma in the chamber
The step and the temperature of the substrate from the temperature of the member to be etched.
And the source gas plasma is controlled to a predetermined temperature
Metal obtained by etching the member to be etched
Metal component is deposited on the substrate from the precursor of the component and the source gas.
Temperature control means for performing predetermined film formation by
The source gas generated by the film formation reaction by supplying electromagnetic waves to the
Having an electromagnetic wave generating means for dissociation,
Device so that the particles of the material do not fall onto the substrate
The same device as described in [Claim 13]
To dissociate the source gas generated during the film formation reaction.
Thereby, the film formation reaction can be promoted. The invention described in [Claim 24] has an internal
Making high vapor pressure halides in chambers containing substrates
An object formed of a composite metal composed of multiple types of metal components
While the switching member is provided, the halogenation in the chamber
The member to be etched with a source gas plasma containing
Etch the metal component and the source gas before multiple types
Forming a precursor, the temperature of the member to be etched and the substrate
And a predetermined temperature and temperature difference,
Deposit metal components of multiple types of precursors on the substrate and
Since the film is formed, various thin films can be manufactured according to the application.
It can be used as a highly versatile metal film fabrication method.
Can be The invention described in [Claim 25] is characterized in that
Making high vapor pressure halides in chambers containing substrates
From one or more metal components and one or more non-metal components
Of a member to be etched formed of a composite metal
On the other hand, the source gas plug containing halogen in the chamber
Etching the member to be etched with a metal
One or more precursors, non-metallic components, and raw materials
Forming one or more precursors with a gas,
The temperature of the substrate and the substrate to a predetermined temperature and a temperature difference.
By controlling, the metal component and the non-metal component
At the same time, it is deposited on the substrate to form a predetermined film.
Various thin films can be produced according to the requirements, and it has excellent versatility.
It can be used as a method for producing a metal film. The invention according to [claim 26] is characterized in that the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
Made of composite metal composed of multiple types of metal components
Member to be etched, substrate and member to be etched
Source gas containing halogen in the chamber between
Source gas supply means for supplying a source gas;
Supply high frequency power to etch the material.
The raw material gas supplied into the chamber is turned into plasma and
Deposition plasma for forming source gas plasma in chamber
Generating means for controlling the temperature of the substrate to the temperature of the member to be etched;
Controlling the raw material gas plasma to a predetermined temperature lower than
Obtained by etching a member to be etched
From several kinds of precursors of metal and source gas
Temperature control for depositing metal components on a substrate and forming a predetermined film
Means to produce various thin films according to the application.
As a highly versatile metal film production system.
Can be used. In the invention according to claim 27, the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
Made of composite metal composed of multiple types of metal components
Member to be etched and raw material gas plug containing halogen
A gas is formed outside the chamber, and
Plasma between the substrate and the member to be etched.
Gas supply means for supplying the source gas into the chamber in the chamber
The temperature of the substrate is lower than the temperature of the member to be etched.
At a predetermined temperature, the source gas plasma is etched.
Metal components obtained by etching the
Multiple types of metal components from multiple types of precursors with source gas
Temperature control means for precipitating on a substrate and forming a predetermined film.
To produce various thin films according to the application.
It can be used as a highly versatile metal film production system.
Can be. [0174] In the invention described in claim 28, the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
One or more metal components and one or more non-metal components to make
A member to be etched formed of a composite metal comprising:
In a chamber between the substrate and the member to be etched
Gas supply to supply halogen-containing material gas to
Means for etching said member to be etched.
Supplied inside the chamber by supply of frequency power
Source gas is converted into plasma and source gas plasma is placed in the chamber.
Plasma generation means for forming the mask and the temperature of the substrate.
A predetermined temperature lower than the temperature of the member to be etched is controlled.
The source gas plasma etches the member to be etched.
One of metal components and raw material gas obtained by
One or more kinds of precursors, non-metal components and raw material gas
Metal and non-metal components from the precursor of
Temperature control means for depositing and forming a predetermined film.
It is possible to produce various thin films according to the application.
It can be used as a metal film manufacturing device with excellent usability
You. According to the invention described in claim 29, the substrate is
A cylindrical chamber to be accommodated, and
A high vapor pressure halide disposed at a position facing the plate
One or more metal components and one or more non-metal components to make
A member to be etched formed of a composite metal
A source gas plasma containing a gas is formed outside the chamber.
And the source gas plasma is
Supply into the chamber between the member to be etched
Source gas plasma supply means and the substrate temperature
Control to a predetermined temperature lower than the temperature of the
The source gas plasma etches the member to be etched.
Of one or more metal components and raw material gas
One or more precursors of a precursor, a non-metal component, and a source gas
From which metal and non-metal components are simultaneously deposited on the substrate
And temperature control means for performing predetermined film formation by
It can produce various thin films according to
It can be used as a metal film manufacturing apparatus. The invention described in [Claim 30] is based on [Claim 30].
The metal according to any one of Items 1 to 10
In the method for producing a film, an etching target formed of the metal is used.
The component is made of a composite metal composed of multiple types of metal components.
And the source gas plasma etches the member to be etched.
Of metal components and raw material gas obtained by
Of various types of metal components from precursors
Preparing various thin films according to the application
And a highly versatile metal film fabrication method
Can be used. The invention described in [Claim 31] is based on [Claim 31].
Item 11. The gold according to any one of claims 23 to 23
In the apparatus for producing a metal film, the etching target formed of the metal may be used.
Member is made of a composite metal composed of multiple types of metal components
The source gas plasma etches the member to be etched.
Of metal components and raw material gas obtained by
Precipitate multiple metal components from different precursors on a substrate
To form various thin films according to the application.
Metal film production equipment with excellent versatility.
Can be used. The invention described in [Claim 32] is based on [Claim 32].
The metal according to any one of Items 1 to 10
In the method for producing a film, an etching target formed of the metal is used.
The components are one or more metal components and one or more non-metal components
The source gas plasma formed of a composite metal consisting of
Obtained by etching a member to be etched
One or more precursors of a metal component and a source gas and a non-metal component
Metal components from one or more precursors of
Predetermined film formation by simultaneously depositing metal components on the substrate
Therefore, it is possible to produce various thin films according to the application,
It can be used as a highly versatile metal film manufacturing method.
Wear. The invention described in [Claim 33] is based on [Claim
Item 11. The gold according to any one of claims 23 to 23
In the apparatus for producing a metal film, the etching target formed of the metal may be used.
The components are one or more metal components and one or more non-metal components.
And the raw material gas plasma
Is obtained by etching the member to be etched
One or more precursors of a metal component and a source gas and a non-metal component
And metal components from one or more precursors
Predetermined film formation by simultaneously depositing non-metal components on the substrate
Therefore, it is possible to produce various thin films according to the application.
To be used as a highly versatile metal film production system
Can be.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic side view showing a metal film manufacturing apparatus according to a first embodiment of the present invention. FIG. 2 is a schematic side view showing a metal film manufacturing apparatus according to a second embodiment of the present invention. FIG. 3 is a view taken along line II of FIG. 2; FIG. 4 is a view taken along the line II-II in FIG. 3; FIG. 5 is a schematic side view showing a metal film manufacturing apparatus according to a third embodiment of the present invention. FIG. 6 is a schematic side view showing a metal film manufacturing apparatus according to a fourth embodiment of the present invention. FIG. 7 is a schematic side view showing a metal film manufacturing apparatus according to a fifth embodiment of the present invention. FIG. 8 is a schematic side view showing a metal film manufacturing apparatus according to a sixth embodiment of the present invention. FIG. 9 is a schematic side view showing a metal film manufacturing apparatus according to a seventh embodiment of the present invention. FIG. 10 is a view taken along line II of FIG. 9; FIG. 11 is a schematic side view showing a metal film manufacturing apparatus according to an eighth embodiment of the present invention. FIG. 12 is a schematic side view showing a metal film manufacturing apparatus according to a ninth embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 Chamber 3 Substrate 6 Temperature control means 7 Copper plate member 9 Plasma antenna 12 for film formation Nozzle 14 Cl ₂ gas plasma 15 Precursor 16 Cu thin film 24 Passage 25 Excitation chamber 26 Plasma antenna 41 Chamber 47 Ceiling plate 49 Plasma antenna for film 58 Member to be etched 59 Ring portion 60 Projecting portion 71 Chamber 72 Copper plate member 73 Shielding plate 73 a Hole 81 Chamber 88 Member to be etched 90 Passage 91 Plasma antenna 101 Composite metal plate member 102 Precursor 103 Composite metal thin film 105 Composite metal Member 106 Ring 107 Projection

   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Hiroshi Tonegawa             1-8-1 Koura, Kanazawa-ku, Yokohama-shi, Kanagawa               Mitsubishi Heavy Industries, Ltd. Advanced Technology Research Center             Inside (72) Inventor Ikumasa Ogi             2-1-1 Shinhama, Arai-cho, Takasago-shi, Hyogo Prefecture             Mitsubishi Heavy Industries, Ltd. Takasago Research Laboratory (72) Inventor Ken Ogura             1-8-1 Koura, Kanazawa-ku, Yokohama-shi, Kanagawa               Mitsubishi Heavy Industries, Ltd. Advanced Technology Research Center             Inside (72) Inventor Yoshiyuki Ohba             1-8-1 Koura, Kanazawa-ku, Yokohama-shi, Kanagawa               Mitsubishi Heavy Industries, Ltd. Advanced Technology Research Center             Inside (72) Inventor Toshihiko Nishimori             2-1-1 Shinhama, Arai-cho, Takasago-shi, Hyogo Prefecture             Mitsubishi Heavy Industries, Ltd. Takasago Research Laboratory (72) Inventor Naoki Yawata             2-1-1 Shinhama, Arai-cho, Takasago-shi, Hyogo Prefecture             Mitsubishi Heavy Industries, Ltd. Takasago Research Laboratory F term (reference) 4K030 AA02 BA01 DA04 EA01 FA01                       FA07 FA10                 4M104 BB04 BB14 BB17 BB18 DD43                       DD44 DD45

Claims (1)

Claims: 1. A member to be etched formed of a metal for forming a high vapor pressure halide is disposed in a chamber for accommodating a substrate therein, and the temperature of the member to be etched and the temperature of the substrate are determined. By controlling to a predetermined temperature and a temperature difference, the member to be etched is etched with a source gas plasma containing halogen in the chamber to form a precursor of a metal component and a source gas, and a metal of the precursor is formed. In the metal film forming method of depositing a component on a substrate to form a predetermined film, a radical of the source gas is separately formed, and the source gas radical is supplied into the chamber to be in an adsorbed state on the substrate. A method for producing a metal film, comprising extracting a source gas from the precursor, depositing the metal component on a substrate, and forming a predetermined film. 2. The metal film forming method according to claim 1, wherein the radicals of the source gas are applied to a source gas flowing through a cylindrical passage communicating with the chamber by applying a high-frequency electric field to the source gas. A method for producing a metal film, characterized in that a method for producing a metal film comprises: 3. The metal film forming method according to claim 1, wherein the radicals of the raw material gas are supplied to the raw material gas flowing through a cylindrical passage communicating with the chamber by supplying microwaves to the raw material gas. A method for producing a metal film, characterized by being obtained by forming into plasma. 4. The method for producing a metal film according to claim 1, wherein radicals of the source gas are obtained by thermal dissociation by heating the source gas flowing through a cylindrical passage communicating with the chamber. Characteristic metal film manufacturing method. 5. The metal film forming method according to claim 1, wherein the radicals of the source gas supply an electromagnetic wave such as a laser beam or an electron beam to the source gas flowing through a cylindrical passage communicating with the chamber. And a source film obtained by dissociating the source gas. 6. An etching target member made of a metal for forming a high vapor pressure halide is disposed in a chamber for accommodating a substrate therein, and a temperature and a temperature difference between the etching target member and the substrate are set to a predetermined temperature and a predetermined temperature difference. To form a precursor of the metal component and the source gas by etching the member to be etched with the source gas plasma containing halogen in the chamber, and depositing the metal component of the precursor on the substrate. A method for producing a metal film, wherein a plasma condition is controlled so as to increase a dissociation rate of a source gas generated by a film forming reaction. 7. The method of manufacturing a metal film according to claim 6, wherein the control of the plasma conditions is realized by reducing the supply amount of the source gas. 8. The method of manufacturing a metal film according to claim 6, wherein the control of the plasma conditions is realized by increasing the amount of high frequency power for forming the source gas plasma. Metal film production method. 9. The method of manufacturing a metal film according to claim 6, wherein the control of the plasma conditions is realized by supplying a rare gas having a mass of Ne or more into the chamber in addition to the source gas. Characteristic metal film manufacturing method. 10. The method for manufacturing a metal film according to claim 6, wherein the control of the plasma conditions is realized by supplying an electromagnetic wave into the chamber to dissociate the source gas supplied into the chamber. Characteristic metal film manufacturing method. 11. A cylindrical chamber for accommodating a substrate, a member to be etched made of a metal for forming a high vapor pressure halide disposed at a position facing the substrate in the chamber, Source gas supply means for supplying a source gas containing halogen into the chamber between the member to be etched, and a source gas supplied into the chamber by supplying high-frequency power to etch the member to be etched; A film forming plasma generating means for forming a source gas plasma in a chamber by converting a gas into a plasma, and controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched so that the source gas plasma is The temperature at which the metal component is deposited on the substrate from the precursor of the metal component and the source gas obtained by etching the Control means and a metal film production apparatus and having a source gas radical replenishment means for replenishing the radicals of the source gas into the chamber. 12. A cylindrical chamber for accommodating a substrate, a member to be etched formed of a metal for forming a high vapor pressure halide disposed at a position facing the substrate in the chamber, and containing a halogen. Source gas plasma supply means for forming a source gas plasma outside the chamber and supplying the source gas plasma into the chamber between the substrate and the member to be etched; and A temperature at which the source gas plasma is controlled to a predetermined temperature lower than the temperature to deposit a metal component on a substrate from a precursor of the metal component and the source gas obtained by etching the member to be etched, thereby forming a predetermined film. Control means, and source gas radical replenishing means for replenishing the source gas radicals into the chamber. That metal film production apparatus. 13. A cylindrical chamber for accommodating a substrate, and a member to be etched formed of a metal for forming a high vapor pressure halide disposed at a position in the chamber avoiding a position facing the substrate. A shielding plate disposed between the substrate and the member to be etched in the chamber and having a hole facing the direction of the substrate; and a halogen in the chamber between the member to be etched and the shielding plate. Source gas supply means for supplying a source gas containing: a source gas supplied to the inside of the chamber by supplying high-frequency electric power to etch the member to be etched, thereby forming a source gas plasma in the chamber. A plasma generating means for forming a film, and controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched, and Temperature control means for depositing a metal component on a substrate from a precursor of a metal component and a source gas obtained by etching a member to be etched by a zuma to form a predetermined film, and radicals of the source gas are introduced into the chamber. An apparatus for producing a metal film, comprising: a raw material gas radical replenishing means for replenishing. 14. A metal film forming apparatus according to any one of [11], [12] and [13], wherein the supply means of the raw material gas radical is communicated with the inside of the chamber. An apparatus for producing a metal film, characterized in that a high-frequency current is supplied to a coil wound around a cylindrical passage through which a raw material gas flows, and the raw material gas is turned into plasma by the action of an electric field formed thereby. 15. The metal film forming apparatus according to any one of [11], [12] and [13], wherein the supply means of the raw material gas radical is communicated with the inside of the chamber. An apparatus for producing a metal film, comprising: means for supplying microwaves in a cylindrical passage through which a raw material gas flows, wherein the microwaves generated by the microwave supply means convert the raw material gas into plasma. 16. The metal film forming apparatus according to claim 11, wherein the supply means for the source gas radical is a cylinder connected to the inside of the chamber. An apparatus for producing a metal film, comprising: a heating means for heating a raw material gas flowing through a flow path having a shape and thermally dissociating the raw material gas. 17. The metal film forming apparatus according to any one of claims 11 to 12, wherein the supply means for the source gas radicals comprises a cylinder communicating with the inside of the chamber. An apparatus for producing a metal film, comprising: an electromagnetic wave generating means for supplying an electromagnetic wave, such as a laser beam or an electron beam, to a raw material gas flowing through a flow path to dissociate the raw material gas. 18. A cylindrical chamber for accommodating a substrate, a member to be etched formed of a metal for forming a high vapor pressure halide disposed in a position facing the substrate in the chamber, Source gas supply means for supplying a source gas containing halogen into the chamber between the member to be etched, and a source gas supplied into the chamber by supplying high-frequency power to etch the member to be etched; A film forming plasma generating means for forming a source gas plasma in a chamber by converting a gas into a plasma, and controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched so that the source gas plasma is The temperature at which the metal component is deposited on the substrate from the precursor of the metal component and the source gas obtained by etching the And control means, in addition to the raw material gas, the metal film production apparatus characterized by mass and a rare gas supply means for supplying the more noble gases Ne into the chamber. 19. A cylindrical chamber for accommodating a substrate, a member to be etched made of a metal for forming a high vapor pressure halide disposed at a position facing the substrate in the chamber, and a halogen-containing member. Source gas plasma supply means for forming a source gas plasma outside the chamber and supplying the source gas plasma into the chamber between the substrate and the member to be etched; and A temperature at which the source gas plasma is controlled to a predetermined temperature lower than the temperature to deposit a metal component on a substrate from a precursor of the metal component and the source gas obtained by etching the member to be etched, thereby forming a predetermined film. Control means; and rare gas supply means for supplying a rare gas having a mass of Ne or more into the chamber in addition to the source gas. Metal film production apparatus. 20. A cylindrical chamber for accommodating a substrate, and a member to be etched made of a metal for forming a high vapor pressure halide disposed at a position in the chamber avoiding a position facing the substrate. A shielding plate disposed between the substrate and the member to be etched in the chamber and having a hole facing the direction of the substrate; and a halogen in the chamber between the member to be etched and the shielding plate. Source gas supply means for supplying a source gas containing: a source gas supplied to the inside of the chamber by supplying high-frequency electric power to etch the member to be etched, thereby forming a source gas plasma in the chamber. A plasma generating means for forming a film, and controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched, and Temperature control means for depositing a metal component on a substrate from a precursor of a metal component and a raw material gas obtained by etching a member to be etched by a zuma to form a predetermined film; A rare gas supply means for supplying the rare gas into the chamber. 21. A cylindrical chamber for accommodating a substrate, a member to be etched formed of a metal for forming a high vapor pressure halide disposed in a position facing the substrate in the chamber, Source gas supply means for supplying a source gas containing halogen into the chamber between the member to be etched, and a source gas supplied into the chamber by supplying high-frequency power to etch the member to be etched; A film forming plasma generating means for forming a source gas plasma in a chamber by converting a gas into a plasma, and controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched so that the source gas plasma is The temperature at which the metal component is deposited on the substrate from the precursor of the metal component and the source gas obtained by etching the Control means and a metal film production apparatus and having an electromagnetic wave generating means for dissociating the source gas with generated film-forming reaction by supplying electromagnetic waves into the chamber. 22. A cylindrical chamber accommodating a substrate, a member to be etched formed of a metal for forming a high vapor pressure halide disposed in a position facing the substrate in the chamber, and a halogen-containing member. Source gas plasma supply means for forming a source gas plasma outside the chamber and supplying the source gas plasma into the chamber between the substrate and the member to be etched; and A temperature at which the source gas plasma is controlled to a predetermined temperature lower than the temperature to deposit a metal component on a substrate from a precursor of the metal component and the source gas obtained by etching the member to be etched, thereby forming a predetermined film. Control means; and electromagnetic wave generating means for supplying an electromagnetic wave into the chamber to dissociate a source gas generated by a film forming reaction. Metal film production apparatus according to claim Rukoto. 23. A cylindrical chamber for accommodating a substrate, and a member to be etched made of a metal for forming a high vapor pressure halide disposed at a position in the chamber avoiding a position facing the substrate. A shielding plate disposed between the substrate and the member to be etched in the chamber and having a hole facing the direction of the substrate; and a halogen in the chamber between the member to be etched and the shielding plate. Source gas supply means for supplying a source gas containing: a source gas supplied to the inside of the chamber by supplying high-frequency electric power to etch the member to be etched, thereby forming a source gas plasma in the chamber. A plasma generating means for forming a film, and controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched, and Temperature control means for depositing a metal component on a substrate from a precursor of a metal component and a raw material gas obtained by etching a member to be etched by a plasma to form a predetermined film; and supplying an electromagnetic wave into the chamber to form a film. An apparatus for producing a metal film, comprising: an electromagnetic wave generating means for dissociating a source gas generated by a film reaction. 24. An etching target member formed of a composite metal comprising a plurality of types of metal components for producing a high vapor pressure halide is disposed in a chamber accommodating a substrate therein.
The member to be etched is etched with a source gas plasma containing halogen in the chamber to form a plurality of types of precursors of a metal component and a source gas, and the temperature of the member to be etched and the temperature of the substrate are set to a predetermined temperature. And controlling the temperature difference so as to deposit metal components of the plurality of types of precursors on a substrate to form a predetermined film. 25. An etching target member formed of a composite metal comprising one or more metal components and one or more non-metal components for forming a high vapor pressure halide in a chamber for accommodating a substrate therein. Etching the member to be etched with a halogen-containing source gas plasma in the chamber to form at least one precursor of a metal component and a source gas and at least one precursor of a non-metal component and a source gas; Forming, controlling the temperature of the member to be etched and the substrate to a predetermined temperature and a temperature difference, thereby simultaneously depositing the metal component and the non-metal component on the substrate to form a predetermined film. Characteristic metal film manufacturing method. 26. A composite material comprising a cylindrical chamber for accommodating a substrate, and a plurality of metal components for producing a high vapor pressure halide disposed at a position facing the substrate in the chamber. A member to be etched, source gas supply means for supplying a source gas containing halogen into a chamber between the substrate and the member to be etched, and supply of high frequency power to etch the member to be etched. A plasma generating means for forming a source gas plasma in the chamber by turning the source gas supplied into the chamber into plasma, and controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched. The raw material gas plasma is used to form a plurality of precursors of a metal component and a raw material gas obtained by etching a member to be etched. The type of metal component is deposited on the substrate metal film production apparatus, comprising a temperature control means for performing predetermined film formation. 27. A cylindrical chamber for accommodating a substrate, and a composite metal comprising a plurality of types of metal components for producing a high vapor pressure halide disposed at a position facing the substrate in the chamber. A member to be etched, a source gas plasma supply means for forming a source gas plasma containing halogen outside the chamber, and supplying the source gas plasma into the chamber between the substrate and the member to be etched; Controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched, the source gas plasma is used to etch the member to be etched. A metal film forming apparatus, comprising: a temperature control means for depositing a metal component on a substrate to perform a predetermined film formation. 28. A cylindrical chamber for accommodating a substrate, and one or more metal components for producing a high vapor pressure halide disposed at a position facing the substrate in the chamber.
A member to be etched formed of a composite metal comprising at least one kind of non-metal component; a material gas supply unit for supplying a material gas containing halogen into a chamber between the substrate and the member to be etched; In order to etch the etching member, film-forming plasma generating means for forming a source gas plasma in the chamber by turning a source gas supplied into the chamber by supplying high-frequency power into the chamber, The raw material gas plasma is controlled to a predetermined temperature lower than the temperature of the etching member, and one or more precursors of a metal component and a raw material gas obtained by etching the member to be etched, a non-metallic component, and a raw material gas. Temperature control means for simultaneously depositing a metal component and a non-metal component from one or more precursors on a substrate to form a predetermined film; Metal film production apparatus, characterized by. 29. A cylindrical chamber for accommodating a substrate, and one or more metal components for producing a high vapor pressure halide disposed at a position facing the substrate in the chamber.
A member to be etched formed of a composite metal comprising at least one type of non-metallic component, and a source gas plasma containing halogen is formed outside the chamber, and the source gas plasma is applied between the substrate and the member to be etched. A source gas plasma supply means for supplying the source gas plasma into the chamber, and a metal component obtained by controlling the temperature of the substrate to a predetermined temperature lower than the temperature of the member to be etched and etching the member to be etched by the source gas plasma. Temperature control means for simultaneously depositing a metal component and a nonmetal component on a substrate from one or more precursors of a source gas, a nonmetal component, and one or more precursors of a source gas, and forming a predetermined film. And a metal film forming apparatus comprising: 30. The metal film forming method according to any one of claims 1 to 10, wherein the member to be etched formed of the metal is a composite metal comprising a plurality of types of metal components. Forming a predetermined film by depositing a plurality of types of metal components on a substrate from a plurality of types of precursors of a metal component and a source gas obtained by etching the member to be etched by the source gas plasma. Characteristic metal film manufacturing method. 31. The metal film forming apparatus according to any one of [11] to [23], wherein the member to be etched formed of the metal is a composite metal comprising a plurality of types of metal components. Forming a predetermined film by depositing a plurality of types of metal components on a substrate from a plurality of types of precursors of a metal component and a source gas obtained by etching the member to be etched by the source gas plasma. Characteristic metal film production equipment. 32. The metal film forming method according to any one of claims 1 to 10, wherein the member to be etched formed of the metal has at least one metal component and at least one metal component. One or more precursors of a metal component and a source gas obtained by etching the member to be etched by the source gas plasma, and one of a non-metal component and a source gas. A method for producing a metal film, comprising simultaneously depositing a metal component and a non-metal component from a plurality of types of precursors on a substrate to form a predetermined film. 33. The metal film forming apparatus according to any one of claims 11 to 23, wherein the member to be etched formed of the metal has at least one metal component and at least one metal component. One or more precursors of a metal component and a source gas obtained by etching the member to be etched by the source gas plasma, and one of a non-metal component and a source gas. A metal film production apparatus characterized in that a metal component and a non-metal component are simultaneously deposited on a substrate from a plurality of types of precursors and a predetermined film is formed.