JP2003324230A - Semiconductor laser and manufacturing method thereof - Google Patents

Abstract

(57) [Problem] To provide a semiconductor laser manufacturing method capable of suppressing contamination and damage of an end face during a manufacturing process, and a semiconductor laser obtained by the method. SOLUTION: A band-shaped multi-point emission type semiconductor laser chip 2
0 on the heat sink 7 as a mounting member.
In addition, the electrode formed on the surface side of the semiconductor laser chip 20 and the electrode 8 attached to the heat sink 7 via the insulating plate 9 are wire-bonded, and the semiconductor laser chip 20 is cleaved in this state. do it,
The semiconductor laser 25 is obtained by covering the light emitting side end face 24 exposed by the cleavage with the end face coat film 23.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser in which a semiconductor laser chip is mounted on a mount member such as a heat sink and a method for manufacturing the same, and more specifically,
The present invention relates to a technique for suppressing the contamination and damage of the end face that occurs during the manufacturing process by mounting the semiconductor laser chip on a mount member and then cleaving it to expose the end face on the light emitting side.

[0002]

2. Description of the Related Art As a semiconductor laser, a well-known semiconductor laser is provided with an optical resonator structure having a laminated structure of compound semiconductor layers forming a double heterojunction, and an end facet of the optical resonator structure It is an edge emitting semiconductor laser used as an emission surface. Above all, a method of manufacturing a multi-point emission type semiconductor laser having a plurality of light emission points will be described below.

First, as shown in FIG. 16, a plurality of marking lines 2 parallel to a specific crystal plane are formed on a surface of a wafer 1 on which a semiconductor laser device is formed, for example, by a diamond cutter 3. The interval between these marking lines 2 becomes the optical resonator length of the semiconductor laser. On the wafer 1, three layers of a basic structure of a semiconductor laser, that is, a clad layer / active layer / clad layer, are crystal-grown. Further, electrodes are formed on the front surface and the back surface of the wafer 1 via a contact layer. Has been done.

Next, a pressing force is applied to the wafer 1 from the side opposite to the surface on which the marking line 2 is formed, so that the wafer 1 is cleaved along the direction (crystal plane) of the marking line 2. By this cleavage,
As shown in FIG. 17, a plurality of band-shaped semiconductor laser chips 4 are obtained. The end surface 5 obtained by this cleavage (including the end surface on the opposite side not visible in the figure) functions as a mirror surface of the optical resonator structure.

In a semiconductor laser, the state of the end face has a great influence on the laser characteristics, and oxidation, dirt, or damage on the end face deteriorates the laser characteristics, and in severe cases, it does not oscillate. Further, the end face of the semiconductor laser is also a portion which is easily deteriorated by the light emitted from itself, and in particular, when the light output is high, the end face is often destroyed and does not operate as a laser.

Therefore, immediately after the cleavage, the end face coating film is applied. For example, Japanese Patent Laid-Open No. 61-13
In Japanese Patent No. 4094, the end face is covered with a dielectric multilayer film to protect the end face (in FIG. 17, the end face coat film 6 is shaded). This is done for both ends. Furthermore,
In addition to the function of protecting the end surface, the end surface coating film 6 has a low reflectance on the front end surface (for example, the end surface 5 in FIG. 17) and a high reflectance on the rear end surface by adjusting the material and the number of layers. It also has a reflectance control function.

The semiconductor laser chip divided into small pieces from the wafer state is usually mounted on a mount member such as a heat sink for reasons of easy carrying, heat dissipation, and convenience of setting the extraction electrode to the outside. In particular, for a semiconductor laser that consumes most of the injected power for heat generation, obtaining good heat dissipation is very important for maintaining laser characteristics and ensuring reliability.

FIG. 18 shows a heat sink 7 on which the semiconductor laser chip 4 is mounted. The heat sink 7 is a copper thick heat dissipation plate. On the heat sink 7, an insulating plate 9
The electrode 8 is attached via. That is, the heat sink 7 and the electrode 8 are electrically insulated. Further, the solder 10 is printed on the heat sink 7. Flux is applied on the solder 10.

As shown in FIG. 19, the semiconductor laser chip 4 is mounted on the solder 10 with its end face 5 on the light emitting side flush with the front end face 7a of the heat sink 7. After that, the semiconductor laser chip 4 is sent to a reflow furnace, where the solder 10 is melted and solidified in the reflow furnace.
And the heat sink 7 are soldered. As a result, the semiconductor laser chip 4 is fixed to the heat sink 7, and the electrode (for example, the positive electrode) formed on the back surface side of the semiconductor laser chip 4 and the heat sink 7 are electrically connected.

Next, as shown in FIG. 20, an electrode (for example, a negative electrode) formed on the front surface side of the semiconductor laser chip 4
And the electrode 8 mounted on the heat sink 7 via the insulating plate 9 are wire-bonded with a gold wire 11, for example. As a result, the electrode formed on the front surface side of the semiconductor laser chip 4 and the electrode 8 attached to the heat sink 7 side are electrically connected.

As described above, the semiconductor laser 12 in which the semiconductor laser chip 4 is mounted on the heat sink 7
Is completed. To operate this semiconductor laser 12,
For example, a negative voltage is applied to the electrode 8 and a positive voltage is applied to the heat sink 7 so that a forward voltage is applied to the PN junction (active layer) formed in the semiconductor laser chip 4. As a result, holes are injected from the P-type clad layer and electrons are injected into the active layer from the N-type clad layer. When the electrons and holes are recombined, light is emitted, further amplified by the optical resonator structure composed of both end faces, and emitted as laser light from the end face 5 on the light emitting side.

[0012]

As described above, since the end face 5 of the semiconductor laser 12 functions as a "mirror" of the optical resonator structure, it is necessary to prevent it from being contaminated or damaged. Therefore, the end face coat film 6 is covered. However, in the manufacture of a general semiconductor laser, many steps such as the mounting step including soldering remain as described above, and the work in the step is performed. Therefore, the end face coat film 6 may be deteriorated, or a foreign substance that blocks light may be attached to the light emission position. As a result, the end face 5 is deteriorated and the reliability of the laser is ensured. I can not do it. Further, since the end face coat film 6 has not only protection of the end face 5 but also the end face coat film 6 itself has an optical function of controlling reflectance, deterioration of the end face coat film 6 cannot obtain desired laser characteristics. It also leads to things.

In particular, when soldering, it is not possible to expose the semiconductor laser chip 4 to a high temperature, so it is necessary to use a flux in order to obtain a good solderability without making the temperature too high. Has become essential. The solvent in the flux evaporates during reflow and causes contamination of the end surface.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a method of manufacturing a semiconductor laser and a semiconductor laser obtained by the method, which suppress contamination and damage of an end face to be covered during a manufacturing process. To provide.

[0015]

The above problem is that the semiconductor laser chip is cleaved while mounted on the mount member, and the end face of the semiconductor laser chip exposed by the cleaving is covered with the end face coating film. Is solved by a semiconductor laser.

Further, the above-mentioned problems include a step of mounting the semiconductor laser chip on the mount member, and a step of cleaving the semiconductor laser chip while mounted on the mount member,
And a step of forming an end face coating film that covers the end face of the semiconductor laser chip exposed by the cleavage.

By cleaving the semiconductor laser chip after mounting it on the mount member, the end face and the end face coat film can be formed in the final step immediately before the completion of the semiconductor laser. As a result, the end face and the end face coat film are not exposed for a long time during the manufacturing process, and contamination and damage can be prevented.

Further, when the semiconductor laser chip is mounted by being spanned between a plurality of mount members, each of the semiconductor laser chips divided by cleavage is mounted on the mount member to form a semiconductor laser and be effectively utilized. Therefore, a wasteful semiconductor laser chip is not generated.

As a mount member on which the semiconductor laser chip is mounted, for example, a heat sink made of copper or iron having good heat dissipation property can be cited. In addition, a silicon substrate on which a photodiode for detecting light emitted from the rear end surface opposite to the front end surface, which is the end surface on the main light emission side, is formed (not only silicon but also SiC and diamond having better heat dissipation) However, a printed wiring board, an interposer substrate, etc. may be mentioned.

The mounting means not only simply supporting and fixing the semiconductor laser chip but also performing electrical connection between the semiconductor laser chip and the mounting member.

An example of the cleavage method is a method of applying a pressing force to the semiconductor laser chip. In this case, not only mechanical pressing force using a needle or blade, but also fluid pressure such as gas pressure or liquid pressure may be applied to cause cleavage. Alternatively, when mounting the semiconductor laser chip by mounting it across a plurality of mounting members,
A plurality of mount members may be attached to the stretched sheet, and then the stretched sheet may be stretched in the planar direction and cleaved.

After cleaving, the semiconductor laser chip together with the mounted mount members is put into a film forming apparatus and the end surface is covered with an end surface coating film. As a method for forming the end face coating film, a vapor deposition method, a sputtering method, or the like can be used. The material of the end face coating film is Al ₂ O ₃ , S
such _{iO 2, Si 2 O 3,} Si 3 N 4, AlN and the like,
It is formed as a multi-layer structure or a single layer structure of any one of these layers.

Further, in a band-shaped multi-point emission type semiconductor laser, a part of the end face is slightly soiled, and if the chip is defective, the yield is remarkably reduced. However, if a small amount of dirt is allowed, non-radiative recombination due to contamination in that part → heat generation becomes active, and the effect of that heat deteriorates other parts as well. Connect Therefore, the present invention is particularly suitable for a multipoint emission type semiconductor laser. Of course, the present invention can be applied to a semiconductor laser having only one light emitting point.

[0024]

DETAILED DESCRIPTION OF THE INVENTION (First Embodiment) FIG.
12 to 12, a method of manufacturing the semiconductor laser according to the first embodiment of the present invention will be described. In this embodiment, as in the conventional case, a multi-point emission type semiconductor laser will be described as an example.

First, as shown in FIG. 1, a plurality of marking lines 2 parallel to a specific crystal plane are formed on a surface of a wafer 1 on which a semiconductor laser device is formed, for example, by a diamond cutter 3. On the wafer 1, three layers of a basic structure of a semiconductor laser, that is, a clad layer / active layer / clad layer, are crystal-grown. Further, electrodes are formed on the front surface and the back surface of the wafer 1 via a contact layer. Has been done.

Then, a pressing force is applied to the wafer 1 from the side opposite to the surface on which the scribe line 2 is formed, so that the wafer 1 is cleaved along the direction (crystal plane) of the scribe line 2. Alternatively, wafer 1
May be attached to a stretched sheet made of an adhesive resin or the like, and the stretched sheet may be stretched in the plane direction to be cleaved. By this cleavage, as shown in FIG. 2, a plurality of belt-shaped semiconductor laser chips 20 are obtained. In addition, due to the "cleavability" that easily breaks along a specific crystal plane,
The marking line 2 can be easily broken by only partially forming it on the edge of the wafer 1.

Next, as shown in FIG. 3, the marking line 22 is formed again by the diamond cutter 3 on each of the semiconductor laser chips 20 obtained in the previous step. The marking line 22 is formed parallel to the longitudinal direction of the semiconductor laser chip 20. That is, it is formed parallel to the marking line 2 in the previous step.

Each semiconductor laser chip 20 has a marking line 2
It is divided into two parts 20a and 20b with 2 in between. The portion 20a is a portion to be soldered on the heat sink 7 in a process described later, and the portion 20b is a portion which does not remain as a product finally. Therefore, since the portion 20a is a portion that substantially functions as a semiconductor laser chip, the position where the marking line 22 is formed is determined so that the width w of the portion 20a becomes the desired optical resonator length.

Next, FIG. 4 shows the semiconductor laser chip 20.
2 shows a heat sink 7 as a mount member on which is mounted. The heat sink 7 is, for example, a copper thick heat dissipation plate. An electrode 8 is attached on the heat sink 7 via an insulating plate 9. That is, the heat sink 7 and the electrode 8 are electrically insulated. Further, the solder 10 is printed on the heat sink 7. That solder 1
Flux is applied on top of 0.

As shown in FIG. 5, the semiconductor laser chip 2
0 is placed on the solder 10 on the heat sink 7 with the surface on which the scribe line 22 is formed facing downward, and then sent to a reflow furnace to melt and solidify the solder 10 in the reflow furnace. After that, the semiconductor laser chip 20 is soldered (die-bonded) to the heat sink 7.

FIG. 6 is a plan view of the state of FIG. 5 seen from the back side, and the semiconductor laser chip 2 is soldered.
Only the portion 20a of 0 is provided, and the portion 20b is in a state of protruding from the front end surface 7a of the heat sink 7. Scribing line 22
Is also a position slightly protruding from the front end surface 7a of the heat sink 7. Due to the above, the semiconductor laser chip 2
0 is fixed to the heat sink 7, and an electrode (for example, a positive electrode) formed on the back surface side of the portion 20a and the heat sink 7 are electrically connected.

Then, as shown in FIG. 7, an electrode (for example, a negative electrode) formed on the surface side of the portion 20a and an electrode 8 mounted on the heat sink 7 via an insulating plate 9 are connected to each other with, for example, a gold wire. Wire bonding is performed at 11. As a result, the electrode formed on the surface side of the portion 20a and the electrode 8 attached to the heat sink 7 side are electrically connected.

Next, the cleavage of the semiconductor laser chip 20 will be described with reference to FIGS. The heat sink 7 on which the semiconductor laser chip 20 is mounted is fixed on the support base 26. The fixing means may be bolting, narrow pressure by a clamp member, or adhesion. The portion 20b of the semiconductor laser chip 20 is positioned so as to protrude from the support base 26.

In this state, the blade 27 as a pressing means for cleaving is raised toward the lower surface of the portion 20b. Then, as shown in FIG. 9, when the tip of the blade 27 comes into contact with the lower surface of the portion 20b and the pressing force from below is applied to the lower surface of the portion 20b due to the further rise of the blade 27, as shown in FIG. The semiconductor laser chip 20 is cleaved along the scribe line 22, and is fixed to the heat sink 7 via the solder 10 from the portion 20a to the portion 20b.
Separates. By this cleavage, the end face 23 from which the laser light is emitted is exposed at the portion 20a.

The semiconductor laser chip 20 whose end face 23 is exposed in the above step is immediately transferred to the vapor deposition device and the heat sink 7.
Everything is thrown in. As shown in FIG. 11, the end surface 23 exposed by the cleavage is opposed to the evaporation source 29 housed in the crucible 28. Then, for example, the evaporation source 29 is heated and evaporated in response to the irradiation of an electron beam from an electron gun (not shown), and the film of the material forming the evaporation source 29 has an end surface that has the functions of protecting the end surface 23 and controlling the reflectance. A coat film 24 is formed on the end face 23.

At the time of this vapor deposition, the evaporation material adheres to a portion other than the end face 23, such as the heat sink 7 and the gold wire 11 which is a bonding wire, but this does not affect the operation of the semiconductor laser. Alternatively, in FIG. 11, the shutter 15 shown by the alternate long and short dash line may hide the portion other than the end face 23 so that the film is formed only on the end face 23.

The end face 21 on the opposite side, which constitutes the mirror surface of the optical resonator structure together with the end face 23, is shown in FIG.
In the state shown in (1) (before separation of the portion 20a and the portion 20b), the end face coating film is formed in advance. This end face 21
Is not the end surface on the light emitting side, and therefore is not required to be as clean as the end surface 23 on the light emitting side. Alternatively, FIG.
In the state shown in FIG. 1, the heat sink 7 may be arranged upside down so that the end face 21 faces the evaporation source 29 before the film formation. The reflectance of the end face coating film is controlled by the number of layers and the material thereof, that is, the end face 21 has a high reflectance and the end face 23 has a low reflectance so that the laser beam is emitted only from the end face 23.

Through the above steps, as shown in FIG. 12, the semiconductor laser chip 20 (20
The semiconductor laser 25 in which a) is mounted is completed. To operate the semiconductor laser 25, for example, a negative voltage is applied to the electrode 8 and a positive voltage is applied to the heat sink 7 so that a forward voltage is applied to the PN junction (active layer) formed in the semiconductor laser chip 20. Apply. As a result, holes are injected from the P-type clad layer and electrons are injected into the active layer from the N-type clad layer. When the electrons and holes are recombined, light is emitted, further amplified by the optical resonator structure constituted by both end faces 23 and 21, and emitted as laser light from the end face 23 on the light emission side.

In the present embodiment, the semiconductor laser 25 is a multi-point emission type laser, and the band-shaped semiconductor laser chip 20.
Has a plurality of light emission points along the longitudinal direction thereof. For example,
If the length of the semiconductor laser chip 20 is about 10 mm,
It has about 100 light emission points. Such a multi-point emission type semiconductor laser 25 is arranged, for example, around a rod-shaped YAG crystal, and is used as a light source for exciting a solid-state laser using the YAG crystal.

As described above, in the present embodiment, the end face coating film 24 is formed immediately after the cleavage at the last stage of the series of manufacturing steps, and therefore the end face 23 and The end coat film 24 can be prevented from being contaminated or damaged. In particular, it is not necessary to worry about contamination by flux during soldering, and soldering using flux is possible. Therefore, mounting can be easily performed even if a solder that is susceptible to oxidation such as lead-free solder is used.

Further, in the present embodiment, since there is a portion 20b that does not finally become a product, that portion 20b serves as a holding margin during handling, and it is possible to strictly control the die bond position during die bonding to the heat sink 7. Become. Since all parts of the conventional semiconductor laser chip 4 (see FIG. 19) function as a final product, they must be handled carefully and carefully, and the handling property deteriorates and it is difficult to perform highly accurate positioning. On the other hand, in the present embodiment, since die bonding can be performed without contacting the part 20a that will be the final product at all, high-precision positioning can be easily performed without any care in handling.

Further, according to the method of the present embodiment in which cleavage is performed after mounting, it is impossible to cleave the portion 20a fixed to the heat sink 7 with the solder 10. Therefore, the end face 23 obtained by cleavage is inevitable. Has a structure protruding from the end surface 7a of the heat sink 7 (see FIG. 1).
0, see FIG. 12). Of course, if the marking line 22 is mounted so as to match the boundary (edge) between the upper surface of the heat sink 7 and its end surface 7a, the end surface 23 of the semiconductor laser chip 20 obtained by cleavage is flush with the end surface 7a of the heat sink 7. Become.

Such a structure has the semiconductor laser chip 2
Compared with the structure in which the end surface 23 of 0 retracts deeper than the end surface 7a of the heat sink 7, an FFP (Far Field Pattern)
Is advantageous in preventing the generation of diffraction interference fringes. However, if the amount of protrusion of the end face 23 of the semiconductor laser chip 20 is increased too much, the amount of the portion not in contact with the heat sink 7 will increase accordingly, so it is necessary to make the amount of protrusion that does not impair heat dissipation.

(Second Embodiment) Next, FIG. 13 and FIG.
The second embodiment of the present invention will be described with reference to FIG. The same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

First, similarly to the first embodiment, the band-shaped semiconductor laser chip 30 is obtained from the wafer 1 by cleaving, and the marking line 3 is attached to the semiconductor laser chip 30.
1 (formed on the back side of the semiconductor laser chip 30 in FIG. 13). By the marking line 31,
The semiconductor laser chip 30 is divided into two parts 30a and 30b. In the second embodiment, both of the two parts 30a and 30b are mounted on the heat sink 7 and utilized as a product. Therefore, the width of each of the portions 30a and 30b divided by the marking line 31 is set to be the optical resonator length.

In the semiconductor laser chip 30, the scribe line 31 is located between the two heat sinks 7, 7 and is bridged between the heat sinks 7, 7 to be die-bonded. After that, the respective portions 30a and 30b are wire-bonded with the electrodes 8 attached to the corresponding heat sinks 7 and the gold wires 11, and then cleaved as follows.

As shown in FIG. 14, one side (left side in the figure)
Only the heat sink 7 is fixed to the support base 26. In this state, when the blade 27 is brought into contact with the lower surface of the other heat sink 7 and a force for pushing up the other heat sink 7 is applied, the scribing line 31 is weakened in strength. The force for opening the line 31 acts and the other heat sink 7 rotates about the scribe line 31 as a fulcrum, as shown by the alternate long and short dash line. As a result, the semiconductor laser chip 30 is cleaved along the scribe line 31 and separated into two parts 30a and 30b. Of course, the two heat sinks 7, 7 may be attached to a stretched sheet, and the stretched sheets may be stretched in the plane direction to be cleaved.

Then, the two end faces 32a and 32b exposed by the cleavage are coated with end face coat films by the vapor deposition method, for example, as in the first embodiment. These end faces 32a and 32b become the light emitting side end faces of the semiconductor laser chips 30a and 30b, respectively.

As described above, in the second embodiment, the two separated semiconductor laser chips 30a and 30b obtained by cleavage after mounting each have a heat sink 7.
Since it functions as a laser element mounted on the substrate, it is not necessary to produce a wasteful semiconductor laser chip by cleavage.

The semiconductor laser chip may be mounted by being stretched over three or more heat sinks. Hereinafter, the three cases will be described as an example with reference to FIG.

Two marking lines 36a and 36b are formed on the semiconductor laser chip 35, and the two marking lines 36 are formed.
a, 36b, the three parts 35a, 35b, 35
It is divided into c.

The semiconductor laser chip 35 has a marking line 36.
a is located between the heat sink 7'a and the heat sink 7'b, and the scribe line 36b is located between the heat sink 7'b and the heat sink 7'c. , 7'c, and die-bonded.

The heat sinks 7'a, 7'b,
When 7'c is attached to the stretched sheet 37 and the stretched sheet 37 is stretched in the plane direction, the semiconductor laser chip 3
5 Cleavage is performed at the portions of the scribe lines 36a and 36b. As a result, the portion 35a mounted on the heat sink 7'a
And a portion 35b mounted on the heat sink 7'b and a portion 35c mounted on the heat sink 7'c are separated from each other, and each is used as a laser element without waste.

Although the respective embodiments of the present invention have been described above, of course, the present invention is not limited to these.
Various modifications are possible based on the technical idea of the present invention.

The semiconductor laser chip may not be directly die-bonded to the heat sink, but may be first mounted on a submount such as Si having a photodiode formed thereon and then mounted on the heatsink together with the submount. In this case, the laser light is emitted from the end face (sub-light emission end face) opposite to the end face (main light emission end face) obtained by cleavage after mounting, and the light is formed on the submount. It is used for output control of the main light emission end face.

The marking line for performing cleavage after mounting may be formed after mounting. Alternatively, the surface on which the marking line is formed may be mounted upward, and the blade may be pressed from above to cause cleavage. Further, wire bonding may be performed after cleavage and end face coating. If the soldering work using the flux has already been completed in the pre-step of cleavage, even if the wire-bonding step is performed after cleavage, the end surface is not so contaminated.

[0057]

As described above, according to the present invention, the cleavage and the coating of the end face exposed by the cleavage are performed after mounting, so that the cleavage and the end face coating can be performed immediately before the completion of the product. To that extent, it is possible to suppress the contamination and damage of the end face and the end face coat film which are covered during the manufacturing process. As a result, in the finally obtained semiconductor laser, good laser characteristics and high reliability can be secured. Further, if the semiconductor laser chip is mounted by being mounted between a plurality of mount members, each of the semiconductor laser chips divided by cleavage is mounted on the mount member to form a semiconductor laser, which is a waste (discard) semiconductor. Since no laser chip is generated, the yield can be improved and the cost can be reduced.

[Brief description of drawings]

FIG. 1 shows a manufacturing process (No. 1) of a semiconductor laser according to a first embodiment of the present invention, showing a state where a marking line is formed on a wafer.

FIG. 2 shows a manufacturing process (No. 2) of the semiconductor laser according to the first embodiment, showing a state of being cleaved into a band-shaped semiconductor laser chip.

3 shows a manufacturing process (No. 3) of the semiconductor laser according to the first embodiment, and shows a state where a marking line is formed again on the band-shaped semiconductor laser chip of FIG.

FIG. 4 shows a manufacturing process (No. 4) of the semiconductor laser according to the first embodiment, showing a state in which electrodes are formed on a heat sink via an insulating plate, and solder and flux are further applied.

FIG. 5 shows a manufacturing step (No. 5) of the semiconductor laser according to the first embodiment, showing a state in which the semiconductor laser chip shown in FIG. 3 is mounted on a heat sink via solder.

FIG. 6 is a plan view of FIG. 5 viewed from the back surface side.

FIG. 7 is a view showing a manufacturing step (6) of the semiconductor laser according to the first embodiment, in which electrodes formed on the front surface side of the semiconductor laser chip and electrodes attached to the heat sink are wire-bonded to each other; Indicates.

8A and 8B show a manufacturing process (No. 7) of the semiconductor laser according to the first embodiment, together with FIGS. 9 and 10, and show a process of cleaving the semiconductor laser chip mounted on the heat sink using a blade. .

9 shows a state in which the blade is further raised from the state of FIG. 8 and is in contact with the semiconductor laser chip.

FIG. 10 shows a state where the blade is further raised from the state of FIG. 9 and the semiconductor laser chip is cleaved.

FIG. 11 shows a final manufacturing process of the semiconductor laser according to the first embodiment, and shows a process of forming an end face coating film on the end face of the light emitting side exposed by cleavage after mounting by a vapor deposition method.

FIG. 12 is a perspective view showing a completed state of the semiconductor laser according to the first embodiment.

FIG. 13 is a plan view showing a manufacturing process of the semiconductor laser according to the second embodiment of the present invention.

FIG. 14 is a view of FIG. 13 viewed from the side.

FIG. 15 is a side view showing a modified example of the present invention.

FIG. 16 shows a manufacturing process (1) of a semiconductor laser in a conventional example, showing a state where a marking line is formed on a wafer.

FIG. 17 shows a manufacturing process (No. 2) of the semiconductor laser in the conventional example, and after cleaving into a band-shaped semiconductor laser chip, an end face serving as a light emitting face and a rear end face opposite thereto are coated with an end face coating film. Shows the state.

FIG. 18 shows a semiconductor laser manufacturing process (No. 3) in the conventional example, showing a state in which electrodes are formed on a heat sink via an insulating plate, and solder and flux are further applied.

FIG. 19 is a view showing a semiconductor laser manufacturing process (No. 4) in the conventional example, showing a state in which the semiconductor laser chip of FIG. 17 is mounted on a heat sink via solder.

20 shows a semiconductor laser chip from the state of FIG.
FIG. 7 is a perspective view showing a state where wire bonding is performed between the heat sink and an electrode on the heat sink to complete a semiconductor laser.

[Explanation of symbols]

1 ... Wafer, 2 ... Marking line, 7 ... Heat sink, 7'a to 7'c ... Heat sink, 8 ... Electrode, 9
...... Insulating plate, 10 ...... Solder, 11 ...... Bonding wire, 20 ...... Semiconductor laser chip, 21 ...... Rear end face,
22: marking line, 23: end face of laser light emitting side, 24
...... End face coating film, 25 …… Semiconductor laser, 30 …… Semiconductor laser chip, 31 …… Scribing line, 32a to 32b
...... End facet on the laser light emitting side, 35 ・ ・ ・ Semiconductor laser chip, 36a to 36b ・ ・ ・ Scribing line, 37 ・ ・ ・ Stretched sheet.

Claims (6)

[Claims] 1. A semiconductor laser in which a semiconductor laser chip is mounted on a mount member, wherein the semiconductor laser chip is cleaved while mounted on the mount member, and an end face coating film is formed on an end face exposed by the cleavage. A semiconductor laser characterized by being covered. 2. The semiconductor laser chip has a strip shape,
The semiconductor laser according to claim 1, wherein the semiconductor laser has a plurality of light emission points along the longitudinal direction. 3. The semiconductor laser according to claim 1, wherein an end face of the semiconductor laser chip is flush with an end face of the mount member or more than an end face of the mount member. 4. A step of mounting a semiconductor laser chip on a mount member, a step of cleaving the semiconductor laser chip in a state of being mounted on the mount member, and a step of covering an end face of the semiconductor laser chip exposed by the cleaving. And a step of forming a facet coating film. 5. The semiconductor laser chip is mounted by being spanned between a plurality of mount members, and the semiconductor laser chip is divided into a plurality of parts corresponding to each of the plurality of mount members by the cleavage. The method for manufacturing a semiconductor laser according to claim 4. 6. The semiconductor laser chip has a strip shape,
The semiconductor laser manufacturing method according to claim 4, wherein the semiconductor laser has a plurality of light emission points along the longitudinal direction.