JP2003322869A - Liquid crystal display of ultra-high aperture ratio and wide visual field angle - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an active matrix liquid crystal display actualizing high- quality images which are free of color shifting and gradation inversion, are high in bright contrast and hardly give rise to after images. <P>SOLUTION: The active matrix liquid crystal display device is formed by boring slender slit holes in pixel electrodes on an active matrix substrate side, in which the intersection angle of the alignment direction of negative dielectric constant anisotropic liquid crystals and the major axis direction of the holes of the slits exists in the relation of 60°≤θ<90° (where θ is a range of 0°≤θ<90°). The negative dielectric constant anisotropic liquid crystals are held by the pixel electrodes bored with a plurality of the holes of the slits and color filter layers formed with a transparent conductive film over the entire surface. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a low cost and a wide viewing angle.
The present invention relates to an active matrix type liquid crystal display device capable of realizing high image quality, high reliability and high yield.

[0002]

2. Description of the Related Art A method of applying an electric field from a lateral direction to a liquid crystal composition layer in a horizontal direction to a substrate by using a comb-teeth-shaped electrode pair formed on one substrate of a conventional active matrix type liquid crystal display device (IPS). Method) has been proposed in JP-A-7-36058 and JP-A-7-159786. FIG. 32 is a cross-sectional view of an IPS (in-plane switching) comb-teeth-shaped electrode pair. Layers formed so that the electrode pairs are not short-circuited are changed and separated by an insulating film. Generally, the number of manufacturing steps is significantly reduced by simultaneously forming different comb-teeth electrodes when forming the scanning lines and the video signal wirings. Therefore, a metal that does not transmit light is used for the comb-shaped electrodes.
The scanning line had a large film thickness in order to reduce the resistance, and the comb-teeth-shaped electrode had a large film thickness as well.

A fringe field driving method different from the IPS method is disclosed in Japanese Patent Laid-Open No. 2000-089255 and Japanese Patent Laid-Open No. 2000-89255.
-347220 and Japanese Patent Laid-Open No. 2001-056476. 1 and 3 are a plan view and a sectional view of a fringe field driving type liquid crystal panel. As shown in the sectional view of FIG. 3, a liquid crystal driving electrode is formed on a common electrode made of a transparent conductor with an insulating layer interposed therebetween. In order to improve the light transmittance, the liquid crystal driving electrode should also be formed of a transparent conductor. The surface of the color filter substrate facing the active matrix substrate, which is in contact with the liquid crystal layer, has an IPS
As in the method, there is no transparent conductive film. A transparent conductive film is formed on the back surface of the color filter substrate to have a shield effect against an external electric field.

[0004]

In the conventional IPS type liquid crystal display device, as shown in FIG. 32, it is difficult to perform uniform rubbing treatment in the conventional rubbing alignment treatment using a rubbing cloth because the comb-teeth electrodes are thick. Display unevenness and light leakage were likely to occur, and the yield was very poor. Furthermore, since the comb-teeth electrodes are non-transparent, the light transmittance is low, and in order to obtain a bright display screen, the power of the backlight must be increased to increase the brightness, increasing the power consumption of the entire system. I had the problem of doing it.

In the conventional fringe field driving type liquid crystal display device, by using transparent conductors for the upper and lower pixel electrodes as shown in FIG. 3, the transmittance can be improved, but the thin film transistor manufacturing process becomes complicated and the yield is reduced. However, there was a problem that the cost was significantly increased.

Further, in the conventional fringe field driving method, the driving voltage is increased as compared with the IPS method as shown in FIG. 31 in order to drive the liquid crystal molecules by utilizing the electric field in the region B as shown in FIG. There was a drawback that

The present invention solves the above-mentioned problems, and since it can use almost the same structure and electrode material as the conventional TN mode liquid crystal panel, the pixel electrodes of the counter side substrate and the thin film transistor side substrate are transparent. An object of the present invention is to manufacture a liquid crystal display device which can be formed of a conductor to improve the transmittance and can perform the same operation as that of a horizontal electric field type liquid crystal display device at low cost with high yield.

[0008]

In order to solve the above problems and achieve the above object, the present invention uses the following means.

[Means 1] A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate. Then, a transparent conductor electrode is formed on the surface of the counter side substrate facing the thin film transistor side substrate, and a plurality of slit-shaped patterns are formed on the surface of the thin film transistor side substrate facing the counter side substrate. Transparent pixel electrodes, and the crossing angle between the major axis direction of the slit pattern and the orientation direction of the negative dielectric anisotropy liquid crystal is in the range of 60 degrees to 90 degrees (where crossing angle θ is 0 Angle is limited to θ ≦ 90 °).

[Means 2] In the means 1, the orientation direction of the negative dielectric constant anisotropic liquid crystal is set to be substantially parallel to the video signal wiring of the thin film transistor substrate.

[Means 3] In means 1, the orientation direction of the negative dielectric constant anisotropic liquid crystal is set to be substantially parallel to the scanning line of the thin film transistor substrate.

[Means 4] A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate. Then, a transparent pixel electrode is formed on a surface of the thin film transistor side substrate facing the opposite side substrate, and a plurality of slit-shaped is formed on a surface of the counter side substrate facing the transparent pixel electrode of the thin film transistor side substrate. There is a transparent common electrode on which a pattern is formed, and the crossing angle between the major axis direction of the slit pattern of the common electrode and the alignment direction of the negative dielectric constant anisotropic liquid crystal is 90 degrees except 60.
The range is from 90 degrees to 90 degrees.

[Means 5] In means 4, the orientation direction of the negative dielectric constant anisotropic liquid crystal is set to be substantially parallel to the video signal wiring.

[Means 6] In the means 4, the orientation direction of the negative dielectric constant anisotropic liquid crystal is set to be substantially parallel to the scanning line.

[Means 7] A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate. Then, a transparent conductor electrode is formed on a surface of the counter side substrate facing the thin film transistor side substrate, and a plurality of linear slit patterns are formed on a surface of the thin film transistor side substrate facing the counter side substrate. Transparent pixel electrodes, the crossing angle between the major axis direction of the slit pattern and the alignment direction of the negative dielectric anisotropy liquid crystal is in the range of 60 to 90 degrees except 90 degrees, and one pixel The liquid crystal molecules with negative dielectric anisotropy can rotate in two different directions, that is, the direction of rotation of the liquid crystal molecule is counterclockwise and the direction of rotation is different. It was so.

[Means 8] A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent conductor electrode is formed on a surface of the counter side substrate facing the thin film transistor side substrate, and a plurality of bent slit patterns are formed on a surface of the thin film transistor side substrate facing the counter side substrate. Transparent pixel electrodes, the crossing angle between the long axis direction of the slit pattern and the orientation direction of the negative dielectric anisotropy liquid crystal is in the range of 60 to 90 degrees except 90 degrees, and within one pixel. The structure in which the slit pattern is bent once or more is used.

[Means 9] A thin film transistor side substrate, a counter substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate. A transparent pixel electrode is formed on the surface of the thin film transistor side substrate facing the opposite side substrate, and a plurality of slit-like patterns are formed on the surface of the opposite side substrate facing the transparent pixel electrode of the thin film transistor side substrate. And the crossing angle between the major axis direction of the slit-shaped pattern and the alignment direction of the negative dielectric anisotropy liquid crystal is in the range of 60 degrees to 90 degrees except 90 degrees, and In one pixel of the substrate on the thin film transistor side, the negative dielectric anisotropy liquid crystal molecules can rotate in two different rotational directions, counterclockwise and clockwise. Area of the region of, and to be approximately equal in one pixel.

[Means 10] Substrate on the thin film transistor side,
An opposite side substrate facing the thin film transistor side substrate,
A negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, and a transparent pixel electrode is formed on a surface of the thin film transistor side substrate facing the counter side substrate. The surface of the opposite substrate facing the transparent pixel electrode of the thin film transistor side substrate has a transparent common electrode formed with a plurality of bent slit-shaped patterns, and a long axis direction of the slit-shaped patterns. , The crossing angle of the alignment direction of the negative dielectric anisotropy liquid crystal is in the range of 60 degrees to 90 degrees except 90 degrees, and the slit shape in the common electrode of the opposite side substrate corresponding to one pixel of the thin film transistor side substrate The structure is such that the pattern is bent once or more.

[Means 11] With respect to the means 7, 8, 9 and 10, the orientation direction of the negative dielectric constant anisotropic liquid crystal is set to be substantially parallel to the video signal wiring formed on the thin film transistor side substrate.

[Means 12] With respect to the means 7, 8, 9 and 10, the orientation direction of the negative dielectric anisotropy liquid crystal is set to be substantially parallel to the scanning line formed on the thin film transistor side substrate.

[Means 13] With respect to the means 8, 10 and 12, the slit pattern which is bent once or more in one pixel and the black mask (light-shielding film) of the video signal wiring, the color filter and the color filter at substantially the same angle. ) Is 1 in 1 pixel
The structure has been bent more than once.

[Means 14] With respect to the means 8, 10, and 11, the scanning line, the color filter, and the black mask (light-shielding) of the color filter are formed at substantially the same angle as the slit pattern bent once or more in one pixel. The film has a structure in which one film is bent once or more within one pixel.

[Means 15] Means 1, 2, 3, 7, 8, 1
Regarding 1, 12, 13, and 14, a transparent metal oxide insulating layer having a large relative dielectric constant or a transparent metal oxynitride insulating layer is formed under a transparent pixel electrode having a plurality of slit-shaped patterns formed on a thin film transistor side substrate. Layers were formed.

[Means 16] Means 4, 5, 6, 9, 10,
Regarding 11, 12, 13, and 14, the transparent common electrode lower layer having a plurality of slit-shaped patterns formed on the counter substrate facing the thin film transistor side substrate has a transparent metal oxide insulating layer or a transparent metal having a large relative dielectric constant. An oxynitride insulating layer was formed.

[Means 17] With respect to the means 1 to 16, the slit electrode width is W, the inter-electrode space of the slit is S, the liquid crystal cell gap is d, and the refractive index anisotropy of the negative dielectric anisotropy liquid crystal is Δn. Then W ≦ d and d ≦ S <4 × d
And 1, 0 μm <d <5, 0 μm and 200 nm ≦
The condition of Δn × d ≦ 460 nm is satisfied.

[Means 18] A thin film transistor side substrate,
An opposite side substrate facing the thin film transistor side substrate,
A negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, and a plurality of slit-shaped patterns on a surface of the counter side substrate facing the thin film transistor side substrate. Transparent conductor electrode (common electrode) is formed on the thin film transistor side substrate, the transparent pixel electrode having a plurality of slit-shaped patterns is also formed on the surface facing the opposite side substrate. The plurality of slit-shaped patterns formed on the upper and lower substrates are arranged substantially parallel to each other, and the thin film transistor side substrate is provided at a position corresponding to the central portion of the interelectrode space of the slit electrodes formed on the opposite side substrate. The electrode portion of the slit electrode of the pixel electrode of is disposed across the negative dielectric constant anisotropic liquid crystal, and the long axis direction of the slit-shaped pattern facing in parallel to each other, Crossing angle of the orientation direction of the electric anisotropic liquid crystal is to be in the range of 90 degrees from 60 degrees except 90 degrees.

[Means 19] A thin film transistor side substrate, an opposite side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the opposite side substrate and the thin film transistor side substrate, A transparent conductor electrode (common electrode) having a plurality of slit-shaped patterns is formed on a surface of the counter side substrate facing the thin film transistor side substrate, and the transparent conductor electrode (common electrode) facing the counter side substrate of the thin film transistor side substrate. Similarly, the surface also has transparent pixel electrodes on which a plurality of slit-shaped patterns are formed.The plurality of slit-shaped patterns formed on the upper and lower substrates are arranged substantially parallel to each other, and the opposite substrate At the position corresponding to the central part of the inter-electrode space of the slit electrode formed in
The electrode portion of the slit electrode of the pixel electrode of the thin film transistor side substrate is arranged with a negative dielectric anisotropy liquid crystal interposed therebetween, and the long axis direction and the negative dielectric constant of the slit-shaped patterns facing each other in parallel with each other. The crossing angle of the orientation direction of the anisotropic liquid crystal is in the range of 60 to 90 degrees except 90 degrees, and 1
The rotational movement direction of the negative dielectric constant anisotropic liquid crystal molecules in the pixel can be two different rotational movements, counterclockwise and clockwise, and the areas of the regions that perform different rotational movements are almost equal in one pixel. I tried to be.

[Means 20] A thin film transistor side substrate,
An opposite side substrate facing the thin film transistor side substrate,
A negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, and a plurality of bent slits are formed on a surface of the counter side substrate facing the thin film transistor side substrate. There is a transparent conductor electrode (common electrode) on which a pattern is formed, and a transparent electrode on which a plurality of bent slit-shaped patterns are similarly formed on the surface of the thin film transistor side substrate facing the opposite side substrate. There is
The plurality of bent slit-shaped patterns formed on the upper and lower substrates are arranged substantially parallel to each other, and at the position corresponding to the central portion of the inter-electrode space of the slit electrodes formed on the opposite substrate, the thin film transistor side. The electrode part of the slit electrode of the pixel electrode of the substrate is arranged with a negative dielectric constant anisotropic liquid crystal interposed, and the long axis direction and the negative dielectric constant anisotropy of the slit-shaped patterns facing each other in parallel with each other. A structure is used in which the crossing angle of the alignment direction of the organic liquid crystal is in the range of 60 to 90 degrees except 90 degrees, and the slit pattern is bent once or more in one pixel.

[Means 21] With respect to the means 18, 19 and 20, the orientation direction of the negative dielectric constant anisotropic liquid crystal is set to be substantially parallel to the video signal wiring formed on the thin film transistor side substrate.

[Means 22] With respect to the means 18, 19 and 20, the orientation direction of the negative dielectric anisotropy liquid crystal is set to be substantially parallel to the scanning line formed on the thin film transistor side substrate.

[Means 23] Regarding the means 20 and 22, 1
The video signal wiring, the color filter, and the black mask (light-shielding film) of the color filter are bent once or more in one pixel at substantially the same angle as the slit-shaped pattern bent once or more in the pixel.

[Means 24] Regarding the means 20 and 21, 1
The scan line, the color filter, and the black mask (light-shielding film) of the color filter are bent at least once within one pixel at almost the same angle as the slit-shaped pattern that is bent once inside the pixel. .

[Means 25] With respect to the means 18 to 24,
When the electrode width of the slit is W, the space between the electrodes of the slit is S, the liquid crystal cell gap is d, and the refractive index anisotropy of the negative dielectric anisotropy liquid crystal is Δn, W ≦ d and 1/3 × d ≤
S <7 × d and 1.0 μm <d <5.0 μm and 200
The condition of nm ≦ Δn × d ≦ 460 nm is satisfied.

[0034]

[Function] A plurality of slit-shaped patterns are formed on either one of the transparent pixel electrode of the active matrix substrate and the transparent common electrode on the opposite substrate side facing the pixel electrode,
Since the other electrode left is a plane electrode, the transmittance characteristic of the liquid crystal cell does not change even if the alignment accuracy of the upper and lower substrates is poor. Therefore, variations in optical characteristics are unlikely to occur.

In the liquid crystal display system of the present invention, when a voltage is applied between the pixel electrode and the counter electrode (common electrode) of the counter substrate, a negative dielectric constant anisotropic liquid crystal is used, and therefore TN
Unlike the (twisted nematic) method, the liquid crystal molecules do not come off from the surface of the substrate. Since the electric field component in the direction parallel to the substrate causes the rotational movement in the plane parallel to the substrate, the same operation as the liquid crystal display mode of the horizontal electric field system similar to the IPS (in-plane switching) system can be performed. For this reason, it is possible to obtain a good image without gradation inversion from any direction.

By adopting the structure in which the slits are bent, the rotational movement directions of the negative dielectric anisotropy liquid crystal molecules can be rotated in two different directions of left rotation and right rotation as shown in FIG. Occur. As a result, almost no color change (color shift) depending on the viewing direction can be solved.

In the case of the present invention of any type as shown in FIGS. 4, 5, 16, 24 and 33, the unevenness of the pixel electrode region is determined by the film thickness of the transparent conductor. . When the slit is formed on the active matrix substrate side, the film thickness of the pixel transparent conductor is about 300 angstroms to 500 angstroms.
The pixel area can be sufficiently flattened only by applying a polyimide alignment film of 0 angstrom to 700 angstrom on the slit electrode. Compared with the conventional IPS method, a stable rubbing treatment can be performed, so that a uniform alignment treated surface can be formed. Since the rubbing unevenness is eliminated, stable production with high yield can be performed.

In the type in which the slits are formed in the pixel electrode on the active matrix substrate side, the active matrix substrate manufacturing process, the color filter manufacturing process, and the liquid crystal cell process are almost all conventional except for the liquid crystal material used and the rubbing direction. Since the same manufacturing process as the TN (twisted nematic) mode can be used, the manufacturing line can be easily changed from the TN mode to the in-plane switching liquid crystal mode of the present invention, and troubles caused by the liquid crystal mode change Can be kept to a minimum.

In the present invention, a negative dielectric anisotropy liquid crystal is sandwiched between transparent conductor electrodes from above and below, and a voltage is applied between the upper and lower electrodes to form a plurality of transparent conductor electrodes formed on at least one transparent conductor electrode. This is a method in which a lateral electric field parallel to the substrate generated at the edge of the slit of the book is used to rotate the negative dielectric constant anisotropic liquid crystal molecules in a plane parallel to the substrate.
Since the upper and lower transparent conductor electrodes are separated by the cell gap distance d, the pixel electrode is a common electrode unlike the conventional IPS mode or the conventional fringe field type horizontal electric field type liquid crystal display device as shown in FIGS. The probability of short-circuiting and becoming defective is very small. Since the structure is almost the same as that of the conventional TN mode, the yield as high as that of the conventional TN mode can be obtained. Since the upper and lower electrodes use the same transparent conductor electrodes as in the conventional TN mode,
A bright image equivalent to the N mode can be obtained.

In the present invention, in the type in which the negative dielectric constant anisotropic liquid crystal is oriented in parallel with the video signal wiring, liquid crystal molecules oriented in parallel between the video signal wiring and the pixel electrode as shown in FIG. Since no rotational motion occurs even when an electric field is applied between the video signal wiring and the pixel electrode, light leakage from this area does not occur. When this type of structure of the present invention is adopted, it is possible to omit the light shielding film (BM ... Black mask) formed on the counter substrate so as to cover the video signal wiring. Even when the light-shielding film (BM) is formed on the counter substrate, light leakage does not occur even if the bonding accuracy of the upper and lower substrates in the scanning line direction is poor, so that the yield in the liquid crystal cell process can be greatly improved.

By forming a transparent insulating layer having a high relative dielectric constant below the slit electrode as shown in FIGS.
Since the electric field can be concentrated in the space portion of the slit electrode, the lateral electric field in the region of the edge portion of the slit electrode can be strongly generated. Since the negative dielectric constant anisotropic liquid crystal can be rotated by applying a slight voltage, the output voltage of the liquid crystal driving IC can be reduced.

As shown in FIG. 34, the crossing angle between the major axis direction of the slit pattern and the orientation direction of the negative dielectric anisotropy liquid crystal is set to 60 to 90 degrees except 90 degrees, so that a low driving voltage can be obtained. It is possible to rotate the liquid crystal.

35, 36, 40, 41, 4
2, a slit-shaped pattern is formed in two electrodes facing each other as shown in FIG. 43, the space S of the slit is wider than the cell gap d, and the width W of the electrode is wider than the cell gap d. When it is small, the horizontal electric field component becomes larger than the vertical electric field component of the upper and lower electrodes, so that a positive dielectric anisotropy liquid crystal can be used, and the degree of freedom in selecting the liquid crystal material becomes wide. In the case of a positive dielectric constant anisotropic liquid crystal, by adopting a high dielectric constant liquid crystal with low viscosity,
Realizes high-speed response.

As shown in FIGS. 23, 27, 40 and 41, by aligning the liquid crystal molecules in parallel with the video signal wirings and the scanning lines, the polarization axis of the polarizing plate is arranged as shown in FIGS. 17 and 18. The effective utilization efficiency of the polarizing plate is improved.

Pixel electrodes having a slit pattern bent as shown in FIGS. 12, 14 and 15, and FIGS.
By combining a curved light-shielding film (BM) such as No. 1 and a color filter layer, a high-quality image with a high aperture ratio and no color shift can be obtained.

[0046]

[Embodiment 1] FIGS. 2 and 4 are a plan view and a cross section of a unit pixel when a slit-shaped pattern is formed on a pixel electrode of a thin film transistor side substrate so as to be substantially parallel to a video signal wiring. It is a figure. The crossing angle between the alignment direction of the negative dielectric anisotropy liquid crystal and the major axis direction of the electrode of the slit pattern is set in the range of 60 to 90 degrees except 90 degrees. The electric field distribution inside the liquid crystal cell of the present invention is characterized in that the transverse electric component pressure x is concentrated around the edge of the slit electrode as shown in FIG. When the space S between the slit electrodes becomes wider than the cell gap d, the lateral electric field component pressure x increases and the liquid crystal molecules can be driven with a small voltage. In the conventional fringe field switching mode liquid crystal panel as shown in FIGS. 1 and 3, the lateral electric field component pressure x in the region B shown in FIG. 30 is used, but in the case of the present invention, in the region A. The horizontal electric field component pressure x is used. When the slit space S becomes larger than the cell gap d, it becomes possible to drive at a voltage lower than the drive voltage in the conventional fringe field switching mode as shown in FIG.

If the crossing angle θ between the major axis direction of the slit electrode and the orientation direction of the negative dielectric anisotropy liquid crystal becomes smaller than 60 degrees as shown in FIG. 34, the driving voltage rapidly increases. The optimum value is in the range of 75 ° ± 10 °. In the conventional field switching mode, the coupling capacitance formed by the slit pixel electrode and the transparent common electrode becomes too large as shown in FIG. Therefore 1
The conventional field fitting mode cannot be applied to a television liquid crystal panel having a large number of pixels. In the case of the present invention, as shown in FIG. 4, even if the area of one pixel is increased, the coupling capacitance formed by the transparent common electrode formed on the color filter side substrate and the slit pixel electrode on the thin film transistor side substrate is increased. Absent. As a result, the present invention can be easily applied to a liquid crystal television having a large area of one pixel. Since the structure of the thin film transistor element and the color filter can use the same process as the conventional TN mode, it is easy to change the production line.

[Embodiment 2] FIGS. 6 and 4 are a plan view and a sectional view of a unit pixel according to a second embodiment of the present invention. The orientation direction of the negative dielectric anisotropy liquid crystal molecules is substantially parallel to the video signal wiring. In the case of the present invention, the polarization axes of the upper and lower polarizing plates are arranged as shown in FIG. When Aligning Negative Dielectric Anisotropy Liquid Crystal by Rubbing Treatment The rubbing treatment method for the thin film transistor substrate is as shown in FIG. When the liquid crystal molecules are aligned in parallel with the video signal wiring, even if an electric field is generated between the pixel electrode and the video signal wiring as shown in FIG. 29, the gap between the pixel electrode and the video signal wiring is reduced (2).
The negative dielectric anisotropy liquid crystal (22) existing in (7) cannot rotate. In this alignment direction, light does not leak from this clearance (27) even if there is no light-shielding film for the color filter. Therefore, even if the alignment accuracy of the thin-film transistor substrate and the color filter substrate is not good, the yield is high. , Does not fall.

[Embodiment 3] FIGS. 7 and 4 are a plan view and a sectional view of a unit pixel according to a third embodiment of the present invention. The alignment direction of the negative dielectric anisotropy liquid crystal molecules is substantially parallel to the scanning line. In the case of the present invention, the polarization axes of the upper and lower polarizing plates are arranged as shown in FIG. In the case of the present invention, the film thickness of the video signal wiring of the thin film transistor substrate is considerably thicker than that of the slit pixel electrode, so that a problem tends to occur during the rubbing process. To solve this problem, the slit pixel electrode may be formed after forming the flattening layer (19) as shown in FIG.

[Embodiment 4] FIGS. 8, 10, and 12 are plan views of a unit pixel according to a fourth embodiment of the present invention. The orientation direction of the negative dielectric anisotropy liquid crystal molecules is substantially parallel to the video signal wiring. In the case of the present invention, the polarization axes of the upper and lower polarizing plates are arranged as shown in FIG. FIG. 27 is a perspective view of FIG. 10 of the present embodiment. In the case of the present invention, as shown in FIG. 22, the negative dielectric anisotropy liquid crystal molecules make rotational movements in two different directions, that is, counterclockwise rotation and clockwise rotation within one pixel. Due to this phenomenon, the color does not change when viewed from any direction and the gradation inversion does not occur in the halftone region, so that the best image can be expressed.

Further, in the fourth embodiment, since the rubbing process is performed in the direction parallel to the video signal wiring as in the second embodiment, the flattening process is not performed even when the film thickness of the video signal wiring is thick. However, good rubbing treatment can be performed. Similarly, for the color filter side substrate, good rubbing treatment can be performed because alignment treatment is performed in a direction parallel to the grooves of the color filter without subjecting the unevenness of the surface of the color filter to flattening. The slit pixel electrode formed on the thin film transistor substrate has a film thickness of 300.
Since it is ˜500 Å, a sufficient flat surface can be obtained only by applying a polyimide alignment film of 500 to 800 Å.

As shown in FIGS. 22 and 30, in the present invention, the negative dielectric constant anisotropic liquid crystal molecules are rotationally moved by utilizing the lateral electric field pressure x generated at the edge portion of the slit electrode.
Since the transverse electric field pressure x is not generated in the central part of the slit electrode or the central part of the space between the slit electrodes, the liquid crystal molecules in this region cannot rotate by themselves. However, when the applied voltage increases and a strong electric field is generated, the liquid crystal molecules in the region where the in-plane electric field pressure x is not generated are also affected by the liquid crystal molecules that start to rotate from the edge portion of the electrode and rotate in the rotating direction. I will exercise. Due to this phenomenon, the liquid crystal display device of the present invention uses a transparent conductor electrode for the pixel electrode and the common electrode as compared with the conventional IPS mode, and therefore a bright image with high transmittance can be obtained at low cost. Since the common electrode is installed on the opposite substrate, there is almost no chance of a short circuit, so
Compared with a conventional fringe field switching (FFS) mode liquid crystal panel, a high yield can be obtained, and a low cost can be realized because the process is simple. Since the capacitive coupling between the slit element electrode and the common electrode is also small, the load on the thin film transistor element does not increase sharply even if one pixel becomes large. Therefore, a large-sized liquid crystal TV can be realized with a conventional amorphous silicon thin film transistor element.

In FIG. 12, the scanning line is also bent in accordance with the bent shape of the slit pixel electrode. The color filter substrate facing the thin film transistor substrate preferably has a shape in which the light-shielding layer (BM) corresponding to the scanning line is similarly bent as shown in FIG. The aperture ratio can be improved by using such a color filter.

[Embodiment 5] FIGS. 9, 11, 13, and 1.
4, FIG. 15 is a plan view of a unit pixel according to the fifth embodiment of the present invention. The orientation direction of the liquid crystal molecules with negative dielectric anisotropy is
It is almost parallel to the scanning line. In the case of the present invention, the polarization axes of the upper and lower polarizing plates are arranged as shown in FIG. In the case of the present invention, as shown in FIG. 22, the negative dielectric anisotropy liquid crystal molecules make rotational movements in two different directions, that is, counterclockwise rotation and clockwise rotation within one pixel. Due to this phenomenon, the color does not change when viewed from any direction and the gradation inversion does not occur in the halftone region, so that the best image can be expressed.

In the case of the present invention, unlike the fifth embodiment, the liquid crystal molecules between the video signal wiring and the slit pixel electrode are not oriented parallel to the video signal wiring, so that when the electric field is generated, the liquid crystal molecules rotate. . Therefore, if the alignment accuracy between the light-shielding film (BM) on the color filter side and the video signal wiring is poor, light leaks from this gap. In order to solve this problem, in FIG. 13, a metal electrode that does not transmit light is arranged between the video signal wiring and the slit pixel electrode. The metal electrode (20) which does not transmit light is set to the same potential as the common electrode on the counter substrate side. This metal electrode can be formed at the same time when the scanning line is formed, and as shown in FIG. 16, it overlaps with the slit pixel electrode, the gate insulating film (16) and the passivation film (15). . A storage capacitor is formed by this overlap.

In FIGS. 14 and 15, the video signal wiring is also bent in accordance with the bent shape of the slit pixel electrode. The color filter substrate facing the thin film transistor substrate preferably has a shape in which the light shielding layer (BM) corresponding to the video signal wiring is similarly bent as shown in FIG. The aperture ratio can be improved by using such a color filter.

Similar to the third embodiment, in the fifth embodiment, since the film thickness of the video signal wiring of the thin film transistor substrate is thicker than the film thickness of the slit pixel electrode, when the liquid crystal molecules are aligned by the rubbing process, the rubbing failure occurs. Is easy to occur. To solve this problem, as shown in Fig. 5, the flattening layer-1
It is preferable to form the slit pixel electrode after forming 9). Since the film thickness of the slit pixel electrode is as thin as 300 to 500 Å, a polyimide alignment film (14)
It is possible to sufficiently flatten the slit pixel electrode simply by coating the film with a film thickness of 500 to 800 angstrom.

[Embodiment 6] FIGS. 25, 26, 28 and 24 are a plan view of a unit pixel of a color filter side substrate and a sectional view of a liquid crystal cell according to a sixth embodiment of the present invention. Figure 2
3 is a perspective view of the sixth embodiment. Unlike the fourth and fifth embodiments, the slit electrode is formed on the color filter side substrate, and the pixel electrode (23) having no slit pattern is formed on the thin film transistor side substrate. This structure has a drawback that a photolithography process must be added once more to form a slit-shaped pattern on the transparent conductive film of the color filter side substrate. However, in FIG. 25, FIG. 26, and FIG. By etching and removing the transparent conductive film in the area corresponding to the scanning line and the video signal wiring, the coupling capacitance formed by the scanning line and the video signal wiring with the transparent conductive film of the color filter side substrate is greatly increased. It can be reduced, and the delay and deformation of the signal waveform can be greatly improved. A large liquid crystal TV panel of 30 inches or more can have a great effect.

In this embodiment, since the region B is on the color filter substrate side as shown in FIG. 30, the electric field from the pixel electrode acts even inside the color filter layer. Therefore, as shown in FIG. 24, it is difficult to obtain reliability unless the ionic substance from the color filter layer (11) is eluted into the liquid crystal layer by the flattening layer (33).

In the same manner as in Examples 4 and 5, since the slit electrode intersects with the orientation direction of the negative dielectric anisotropy liquid crystal molecules in the range of 60 to 90 degrees except 90 degrees, At this point, the rotational movement of the liquid crystal molecules occurs in different directions, counterclockwise and clockwise. Therefore, the phenomenon of color shift in which the color shifts depending on the viewing direction and the gradation inversion phenomenon in the halftone region do not occur, so that a natural image can be obtained.

As shown in FIGS. 24 and 33, by using a transparent metal oxide having a large relative dielectric constant for the flattening film, the electric field can be efficiently concentrated in the space region S of the slit electrode. The driving voltage of the negative dielectric constant anisotropic liquid crystal can be reduced. Metal oxides such as TiOx and TaOx and metal oxynitrides such as TiOxNy and TaOxNy are low in cost and effective.

[Embodiment 7] FIGS. 35, 36, 37, 38, 39, 40, 41, 42 and 43 are sectional views of a liquid crystal cell according to a seventh embodiment of the present invention. FIG. 3 is a perspective view and a plan view of a unit pixel. In this embodiment, the transparent conductive electrodes facing each other on both the thin film transistor side substrate and the color filter side substrate are in the range of 60 to 90 degrees except for 90 degrees with respect to the orientation direction of the liquid crystal molecules of negative dielectric anisotropy. A slit-shaped pattern that intersects is formed. When the space S of the slit is three times or more the width W of the slit electrode as shown in FIGS. 35 and 36, it is possible to use the positive dielectric constant anisotropic liquid crystal. In this case, the crossing angle between the slit electrode and the alignment direction of the positive dielectric anisotropy liquid crystal molecules is most suitable in the range of 0 to 30 degrees except 0 degree. FIG. 37
If the space S of the slit of the electrode on one side is equal to or narrower than the width W of the slit electrode as shown in FIGS. 38 and 39, the positive dielectric constant anisotropic liquid crystal cannot be used. This is because the vertical electric field component pressure y becomes larger than the horizontal electric field component pressure x, liquid crystal molecules rise in the positive dielectric constant anisotropic liquid crystal, and the viewing angle becomes small. In the case of FIGS. 35, 36, and 37, since the upper and lower slit electrodes can use substantially the same slit space S and slit electrode width W, the upper and lower substrates can be balanced, and the problem of flicker and afterimage is caused. Is less likely to occur.

In the case of the slit pattern as shown in FIGS. 40 and 42, the orientation direction of the negative dielectric anisotropy liquid crystal molecules is parallel to the video signal wiring. 41 and 43
In the case of the slit pattern as described in (1), the orientation direction of the negative dielectric constant anisotropic liquid crystal molecules is parallel to the scanning line.
In the same manner as in Example 6, in Example 7, in order to form the slit-shaped pattern on the transparent conductive film of the color filter side substrate,
Since the photolithography process has to be added once, there is a drawback that the cost is increased.
As shown in FIGS. 26 and 28, the transparent conductive film in the region corresponding to the scanning line and the video signal wiring is removed by etching, so that the scanning line and the video signal wiring are transparent conductive films of the color filter side substrate. It is possible to greatly reduce the coupling capacitance formed by the above, and it is possible to greatly improve the delay and deformation of the signal waveform. In this embodiment, the best image can be obtained on a large LCD TV panel of 30 inches or more.

[0064]

According to the present invention, it is possible to realize a liquid crystal panel having a wide viewing angle and a wide range of color shifts, which cannot be realized in the conventional IPS mode, with almost no change in the conventional TN mode process. By aligning the orientation of the liquid crystal molecules with the negative dielectric anisotropy in parallel with the video signal wiring, the problem of light leakage does not occur even if the alignment accuracy between the color filter side substrate and the thin film transistor side substrate is very loose. The yield of the assembly process is improved.

[Brief description of drawings]

FIG. 1 is a plan view of a conventional horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate.

FIG. 2 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 3 is a cross-sectional view of a conventional horizontal electric field liquid crystal drive system (fringe field switching system) active matrix liquid crystal display panel.

FIG. 4 is a cross-sectional view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix liquid crystal display panel of the present invention.

FIG. 5 is a sectional view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix liquid crystal display panel of the present invention.

FIG. 6 is a plan view of an in-plane switching liquid crystal driving method (fringe field switching method) active matrix substrate of the present invention.

FIG. 7 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 8 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 9 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 10 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 11 is a plan view of an in-plane switching liquid crystal driving method (fringe field switching method) active matrix substrate of the present invention.

FIG. 12 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 13 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 14 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 15 is a plan view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 16 is a cross-sectional view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix liquid crystal panel of the present invention.

FIG. 17 is a diagram showing the relationship between the polarization axis of the polarizing plate of the present invention and the liquid crystal panel.

FIG. 18 is a diagram showing the relationship between the polarization axis of the polarizing plate of the present invention and the liquid crystal panel.

FIG. 19 is a diagram showing the relationship between the rubbing roll and the substrate during the rubbing orientation treatment of the present invention.

FIG. 20 is a plan view of a color filter used in the present invention.

FIG. 21 is a plan view of a color filter used in the present invention.

FIG. 22 is an explanatory view showing an electric field vector inside the liquid crystal cell of the present invention and an operation direction of negative dielectric constant anisotropic liquid crystal molecules.

FIG. 23 is a perspective view of an active matrix liquid crystal panel of the present invention.

FIG. 24 is a cross-sectional view of an in-plane switching liquid crystal driving method (fringe field switching method) active matrix liquid crystal panel of the present invention.

FIG. 25 is a plan view of a color filter used in the present invention.

FIG. 26 is a plan view of a color filter used in the present invention.

FIG. 27 is a perspective view of an active matrix liquid crystal panel of the present invention.

FIG. 28 is a plan view of a color filter used in the present invention.

FIG. 29 is an explanatory view showing the operation direction of the negative dielectric constant anisotropic liquid crystal molecules near the video signal wiring of the present invention.

FIG. 30 is an explanatory diagram of a fringe field electric field vector.

FIG. 31 is a relationship diagram between a driving voltage and a transmittance of a horizontal electric field driving type liquid crystal panel.

FIG. 32 is a sectional view of a conventional in-plane switching liquid crystal drive system (IPS ... In-plane switching system) drive electrode structure.

FIG. 33 is a cross-sectional view of a horizontal electric field liquid crystal drive system (fringe field switching system) active matrix substrate of the present invention.

FIG. 34 is a relationship between a driving voltage and a crossing angle between a slit electrode and a liquid crystal alignment direction in a horizontal electric field liquid crystal driving method (fringe field switching method) of the present invention.

FIG. 35 is a cross-sectional layout view of electrodes when slits are formed in the upper and lower transparent electrodes of the present invention.

FIG. 36 is a cross-sectional layout view of a pixel electrode of a type in which slits are formed in the upper and lower transparent electrodes of the present invention.

FIG. 37 is a sectional layout view of a pixel electrode of a type in which a slit is formed in the upper and lower transparent electrodes of the present invention.

FIG. 38 is a sectional layout view of a pixel electrode of a type in which slits are formed in the upper and lower transparent electrodes of the present invention.

FIG. 39 is a sectional layout view of a pixel electrode of a type in which slits are formed in the upper and lower transparent electrodes of the present invention.

FIG. 40 is a perspective view of an active matrix liquid crystal panel of the present invention.

FIG. 41 is a perspective view of an active matrix liquid crystal panel of the present invention.

FIG. 42 is a plan view after the upper and lower electrodes of the type in which slits are formed in the upper and lower transparent electrodes of the present invention are bonded together.

FIG. 43 is a plan view after the upper and lower electrodes of the type in which the upper and lower transparent electrodes of the present invention are provided with slits are attached to each other;

[Explanation of symbols]

1 scanning line 2 video signal wiring 3 thin film transistor element 4 transparent common electrode 5 formed on the thin film transistor side substrate transparent pixel electrode 6 having a slit pattern negative dielectric anisotropy Alignment direction of liquid crystal molecules and polarization axis direction of polarizing plate 7 ... Negative dielectric constant anisotropy Alignment direction of liquid crystal molecules and slit pixel electrode crossing angle θ 8 ... Opposing side substrate (color filter side substrate) 9 ... Transparent conductive film 10 for static electricity shielding Light-shielding film (black mask) 11 Color filter layer 12 Flattening layer on color filter 13 Alignment film on counter substrate 14 Alignment film on thin film transistor substrate 15 Passivation (protective film) 16 ... Gate insulating film 17 ... Thin film transistor side substrate 18 ... Transparent common electrode 19 formed on opposite side substrate (color filter side substrate) Thin film transistor substrate side flattening layer 20 .. Thin film transistor side common electrode 21 .. Polarizing axis direction of polarizing plate 22 .. Negative dielectric constant anisotropic liquid crystal molecule 23 .. Transparent pixel electrode 24 formed on thin film transistor side substrate. ...... Transparent slit common electrode 25 formed on the opposite side substrate (color filter side substrate) ...... Orientation direction 26 of liquid crystal molecules on the thin film transistor side substrate ...... Orientation direction 27 of liquid crystal molecules on the opposite side substrate (color filter side substrate). Space between video signal line and pixel electrode 28. Light transmittance characteristic of conventional IPS mode liquid crystal panel 29. Light transmittance characteristic of conventional fringe field switching mode liquid crystal panel 30. Transmissivity characteristics of the horizontal electric field driving type liquid crystal panel 31 ... IPS mode liquid crystal driving electrode 32 ... IPS mode pixel common charge 33 ‥‥ high dielectric constant overcoat flattening layer

Claims (26)

[Claims] 1. A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent conductor electrode is formed on a surface of the counter substrate facing the thin film transistor side substrate, and a plurality of slit-shaped patterns are formed on a surface of the thin film transistor side substrate facing the counter substrate. There is a transparent pixel electrode, and the crossing angle between the major axis direction of the slit pattern and the alignment direction of the negative dielectric constant anisotropic liquid crystal is 90.
It is characterized in that it is in the range of 60 degrees to 90 degrees except for degrees (however, the crossing angle θ is limited to 0 degrees ≦ θ ≦ 90 degrees). In-field liquid crystal drive type active matrix liquid crystal display device 2. The crossing angle between the major axis direction of a plurality of slit patterns formed on the transparent pixel electrode of the thin film transistor side substrate and the video signal wiring formed on the thin film transistor side substrate is 90 degrees. Peek 60 degrees to 9
A horizontal electric field liquid crystal drive type active matrix liquid crystal display device in which the orientation direction of the negative dielectric constant anisotropic liquid crystal is in the range of 0 degree and is substantially parallel to the video signal wiring. 3. The crossing angle between the major axis direction of the plurality of slit patterns formed on the transparent pixel electrode of the thin film transistor side substrate and the scanning line formed on the thin film transistor side substrate is 90 degrees except for the above. A horizontal electric field liquid crystal drive type active matrix liquid crystal display device in which the orientation direction of the negative dielectric constant anisotropic liquid crystal is in the range of 60 to 90 degrees and is substantially parallel to the scanning line. 4. A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent pixel electrode is formed on a surface of the thin film transistor side substrate facing the counter side substrate, and a plurality of slit-shaped patterns are formed on a surface of the counter side substrate facing the transparent pixel electrode of the thin film transistor side substrate. There is a transparent common electrode formed, and the crossing angle between the major axis direction of the slit pattern and the alignment direction of the negative dielectric anisotropy liquid crystal is in the range of 60 degrees to 90 degrees except 90 degrees. In-field liquid crystal drive type active matrix liquid crystal display device 5. The crossing angle between a major axis direction of a plurality of slit patterns formed on a substrate on the thin film transistor side and a video signal wiring formed on the substrate on the thin film transistor side is 90 degrees. Except in the range of 60 degrees to 90 degrees, and the orientation direction of the negative dielectric constant anisotropic liquid crystal is substantially parallel to the video signal wiring, a horizontal electric field liquid crystal drive type active matrix type liquid crystal display device. 6. The crossing angle between a major axis direction of a plurality of slit patterns formed on a counter substrate facing a thin film transistor side substrate and a scanning line formed on the thin film transistor side substrate except for 90 degrees. A horizontal electric field liquid crystal drive type active matrix liquid crystal display device in which the orientation direction of the negative dielectric constant anisotropic liquid crystal is in the range of 60 to 90 degrees and is substantially parallel to the scanning line. 7. A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent dielectric electrode is formed on the surface of the counter substrate facing the thin film transistor side substrate, and a transparent dielectric electrode having a plurality of slit patterns is formed on the surface of the thin film transistor side substrate facing the counter substrate. There is a pixel electrode, the intersection angle between the major axis direction of the slit pattern and the alignment direction of the negative dielectric anisotropy liquid crystal is in the range of 60 degrees to 90 degrees except 90 degrees, and the negative angle within one pixel. The direction of rotation of the liquid crystal molecules with anisotropic dielectric constant can be two different directions, that is, the direction of rotation is counterclockwise and the direction of clockwise rotation is different. Field driving type active-matrix liquid crystal display device 8. A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent conductor electrode is formed on the surface of the opposite substrate facing the thin film transistor side substrate, and a plurality of bent slit-shaped patterns are formed on the surface of the thin film transistor side substrate facing the opposite substrate. And the crossing angle between the major axis direction of the slit pattern and the alignment direction of the negative dielectric anisotropy anisotropic liquid crystal is in the range of 60 to 90 degrees except 90 degrees, and 1
In-Plane Liquid Crystal Drive Actig Madrix type liquid crystal display device characterized by a structure in which a slit pattern is bent once or more in a pixel 9. A thin film transistor side substrate, a counter substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent pixel electrode is formed on the surface of the thin film transistor side substrate facing the opposite side substrate, and a plurality of slit-like patterns are formed on the surface of the opposite side substrate facing the transparent pixel electrode of the thin film transistor side substrate. And the crossing angle between the major axis direction of the slit-shaped pattern and the alignment direction of the negative dielectric anisotropy liquid crystal is in the range of 60 degrees to 90 degrees except 90 degrees, and In one pixel on the thin film transistor side substrate, the rotational movement direction of the negative dielectric constant anisotropic liquid crystal molecule can be two different rotational movements, counterclockwise rotation and clockwise rotation. Area of the lateral electric field drive system active matrix type liquid crystal display device, characterized in that approximately equal in one pixel 10. A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent pixel electrode is formed on a surface of the thin film transistor side substrate facing the opposite side substrate, and a plurality of bent slit-shaped patterns are formed on a surface of the opposite side substrate facing the transparent pixel electrode of the thin film transistor side substrate. There is a transparent common electrode in which the crossing angle between the major axis direction of the slit pattern and the alignment direction of the negative dielectric anisotropy liquid crystal is 90 degrees except 60 degrees to 9 degrees.
Lateral electric field liquid crystal drive type active matrix liquid crystal having a structure in which the slit-shaped pattern in the common electrode of the opposite side substrate corresponding to one pixel of the thin film transistor side substrate is bent once or more in the range of 0 degree Display device 11. A transverse electric field according to claim 7, 8, 9 or 10, wherein the orientation direction of the negative dielectric anisotropy liquid crystal is substantially parallel to the video signal wiring formed on the thin film transistor side substrate. Liquid crystal drive active matrix liquid crystal display 12. A lateral electric field according to claim 7, 8, 9 or 10, wherein the alignment direction of the negative dielectric anisotropy liquid crystal is substantially parallel to the scanning line formed on the thin film transistor side substrate. Liquid crystal drive active matrix liquid crystal display 13. A black mask (light-shielding film) for a video signal wiring, a color filter and a color filter at substantially the same angle as a slit-shaped pattern bent once or more in one pixel. A horizontal electric field liquid crystal drive type active matrix type liquid crystal display device characterized in that each pixel is bent once or more 14. The scanning line, the color filter, and the black mask (light-shielding film) of the color filter at substantially the same angle as the slit pattern bent once or more in one pixel. Is bent once or more in one pixel, and an in-field liquid crystal drive type active matrix type liquid crystal display device is characterized. 15. Claims 1, 2, 3, 7, 8, 11, 1
Regarding Nos. 2, 13 and 14, a transparent metal oxide insulating layer or a transparent metal oxynitride insulating layer having a large relative dielectric constant is formed under a transparent pixel electrode having a plurality of slit-shaped patterns formed on a thin film transistor side substrate. In-field liquid crystal drive type active matrix type liquid crystal display device characterized in that 16. The method according to claim 4, 5, 6, 9, 10, 11, 1.
Regarding Nos. 2, 13 and 14, a transparent metal oxide insulating layer or a transparent metal oxide layer having a large relative dielectric constant is formed below the transparent common electrode having a plurality of slit-shaped patterns formed on the counter substrate facing the thin film transistor side substrate. In-field liquid crystal driving type active matrix type liquid crystal display device characterized in that a nitride insulating layer is formed. 17. The electrode width of the slit is W, the space between the slit electrodes is S, the liquid crystal cell gap is d, and the refractive index anisotropy of the negative dielectric anisotropy liquid crystal is Δn. Then, W ≦ d and d ≦ S <4 × d and 1, 0 μm <d <5, 0 μm and 200 nm ≦ Δn ×
In-plane switching liquid crystal drive type active matrix type liquid crystal display device characterized by satisfying a condition of d ≦ 460 nm 18. A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent dielectric electrode (common electrode) in which a plurality of slit-shaped patterns are formed on the surface of the opposite substrate facing the thin film transistor side substrate.
And a transparent pixel electrode in which a plurality of slit-shaped patterns are similarly formed on the surface of the thin film transistor side substrate facing the opposite side substrate, and the plurality of slits formed on the upper and lower substrates are formed. The striped patterns are arranged substantially parallel to each other, and the electrode part of the slit electrode of the pixel electrode of the thin film transistor side substrate has a negative dielectric at a position corresponding to the center of the interelectrode space of the slit electrode formed on the opposite side substrate. The crossing angle between the major axis directions of the slit-shaped patterns arranged parallel to each other in parallel with the anisotropic liquid crystal and facing the alignment direction of the negative dielectric constant anisotropic liquid crystal is 90 degrees. In the range of 90 degrees to 90 degrees, a horizontal electric field liquid crystal drive type active matrix liquid crystal display device. 19. A negative dielectric constant anisotropic liquid crystal sandwiched between the thin film transistor side substrate and an opposite side substrate facing the thin film transistor side substrate, and the opposite side substrate and the thin film transistor side substrate, A transparent conductor electrode (common electrode) having a plurality of slit-shaped patterns is formed on the surface of the counter substrate facing the thin film transistor side, and the surface of the thin film transistor side substrate facing the counter substrate. Similarly, there is a transparent pixel electrode on which a plurality of slit-shaped patterns are similarly formed, and the plurality of slit-shaped patterns formed on these upper and lower substrates are arranged substantially parallel to each other and are formed on the opposite substrate. At the position corresponding to the center of the inter-electrode space of the formed slit electrode, the electrode part of the slit electrode of the pixel electrode of the thin film transistor side substrate has a negative dielectric constant anisotropic liquid. The crossing angle between the long axis direction of the slit-like patterns and the alignment direction of the negative dielectric anisotropy anisotropic liquid crystal arranged in parallel with each other is 60 ° to 90 ° except 90 °. Within one pixel range, and the negative dielectric constant anisotropic liquid crystal molecules can rotate in two different rotational directions, counterclockwise and clockwise, and the area of each region that makes different rotational movements is 1 Horizontal electric field drive type active matrix type liquid crystal display device characterized by being almost equal in the pixel 20. A thin film transistor side substrate, a counter side substrate facing the thin film transistor side substrate, and a negative dielectric constant anisotropic liquid crystal sandwiched between the counter side substrate and the thin film transistor side substrate, A transparent conductor electrode (common electrode) having a plurality of bent slit-shaped patterns is formed on a surface of the counter-side substrate facing the thin-film transistor-side substrate, and the thin-film transistor-side substrate faces the counter-side substrate. On the surface, similarly, there are transparent electrodes formed with a plurality of bent slit-shaped patterns, and the plurality of bent slit-shaped patterns formed on these upper and lower substrates are
The electrode parts of the slit electrodes of the pixel electrodes on the thin film transistor side substrate have a negative dielectric constant anisotropy at positions corresponding to the center of the interelectrode space of the slit electrodes formed on the opposite side substrate, which are arranged substantially parallel to each other. Crossing angle between the long axis direction of the slit-shaped patterns and the orientation direction of the negative dielectric anisotropy anisotropic liquid crystal, which are arranged to face each other in parallel with each other, is 90 to 60 degrees except 90 degrees. Is in the range of degrees,
Further, a horizontal electric field liquid crystal drive type active matrix liquid crystal display device characterized by a structure in which a slit pattern is bent once or more in one pixel 21. A lateral electric field liquid crystal device according to claim 18, 19 or 20, wherein the orientation direction of the negative dielectric anisotropy liquid crystal is substantially parallel to the video signal wiring formed on the thin film transistor side substrate. Drive system active matrix liquid crystal display device 22. A horizontal electric field liquid crystal drive according to claim 18, 19, or 20, wherein the orientation direction of the negative dielectric constant anisotropic liquid crystal is substantially parallel to the scanning line formed on the thin film transistor side substrate. Method Active matrix liquid crystal display device 23. With respect to claims 20 and 22, 1 in 1 pixel
A horizontal electric field liquid crystal characterized in that the video signal wiring, the color filter, and the black mask (light-shielding film) of the color filter are bent once or more within one pixel at substantially the same angle as the slit-shaped pattern that is bent more than once. Drive system active matrix liquid crystal display device 24. The scanning line, the color filter, and the black mask (light-shielding film) of the color filter are formed at substantially the same angle as the slit-shaped pattern bent once or more in one pixel. In-field liquid crystal drive type active matrix liquid crystal display device characterized by being bent once or more within one pixel 25. The electrode width of the slit is W, the space between the electrodes of the slit is S, the liquid crystal cell gap is d, and the refractive index anisotropy of the negative dielectric anisotropy liquid crystal is Δn. Then, W ≦ d and 1/3 × d ≦ S <7
Xd and 1.0 μm <d <5, 0 μm and 200
A lateral electric field liquid crystal drive type active matrix type liquid crystal display device characterized by satisfying a condition of nm ≦ Δn × d ≦ 460 nm 26. The angle according to claim 8, 10, or 20, which is substantially the same as the angle at which the video signal wiring or the scanning line is bent,
A color filter substrate characterized in that the black mask (BM) and the color filter layer are bent once or more within one pixel.