JP2003318319A - High frequency module - Google Patents

Abstract

(57) Abstract: Provided is a small, high-performance, high-frequency module that can maintain the electrical characteristics of a filter component without being affected by heat generated by a power amplification element. A power amplification element mounting portion and a filter component mounting portion are formed on a main surface of a dielectric substrate, and a first substrate penetrates the dielectric substrate to the other main surface below the power amplification element mounting portion. And a second through conductor 11 extending to at least the other main surface of the dielectric substrate 2 between at least the power amplification element mounting portion 2a and the filter component mounting portion 2b. The first through conductor 6 and the second through conductor 11 are mounted on the upper surface of the external electric circuit board 7 via the brazing material 13.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a portable information terminal,
Wireless LAN, WLL (Wireless Local)
The present invention relates to a small-sized, high-performance and low-cost high-frequency module that is integrally configured with a high-frequency power amplification device, a high-frequency filter device, and a high-frequency demultiplexer device, which are used in electronic devices and electronic devices such as Loop).

[0002]

2. Description of the Related Art In a high frequency module, a high frequency power amplifying element which constitutes a high frequency power amplifying apparatus handles a large amount of high frequency power as the transmission capacity and transmission speed of a current mobile communication system increase. The amount of heat generated by oneself is increasing. As a heat dissipation measure, there is a method of attaching a heat dissipation fin, and a method of using aluminum nitride, which is a high thermal conductivity ceramic with high thermal conductivity, on the dielectric substrate on which the high frequency power amplification element is mounted. Can be done. Further, Japanese Patent Application Laid-Open No. 2000-31331 proposes a technique for improving heat dissipation by disposing a high frequency power amplifier element on the back surface of a wiring board and soldering it to an external electric circuit board.

A surface acoustic wave element used in a high frequency filter element formed in the vicinity of a high frequency power amplifier in a high frequency module is generally used to propagate a surface acoustic wave to a piezoelectric substrate such as lithium tantalate. Although the comb-shaped electrodes are formed, the electrical characteristics of the piezoelectric substrate itself are greatly affected by temperature changes, so it is necessary to place it in a position away from heating elements such as high-frequency power amplifier elements in the module. Has become essential. For this reason, a high-frequency module in which a conventional high-frequency power amplifier device and a high-frequency filter element are integrally formed is used to reduce the size, weight, density and cost of mobile communication information terminals in recent years. However, there was a problem that it was not possible to fully meet the demand of.

On the other hand, for example, Japanese Unexamined Patent Publication No. 7-58586.
In the publication, an active circuit element, which is a high-frequency power amplifier element, is mounted on a single piezoelectric substrate on which a passive circuit element, which is a surface acoustic wave element, is mounted, thereby forming a compact and low-cost high-frequency circuit device. It is suggested to do so.

[0005]

However, in the high frequency circuit device disclosed in Japanese Unexamined Patent Publication No. 7-58586, a large amount of high frequency power is required as the transmission capacity and the transmission speed increase in the mobile communication system in recent years. When it is necessary to handle it, if an active circuit element that is a high-frequency power amplification element is mounted on a single piezoelectric substrate on which a passive circuit element that is a surface acoustic wave element is formed, the high-frequency power amplification element itself will generate large heat. The deterioration of the filter characteristics due to the heat in the high frequency filter formed on the piezoelectric substrate poses a problem that it cannot be used for a small information terminal device used in a mobile communication system handling a large amount of high frequency power. .

The present invention has been made in view of the above-mentioned problems in the prior art, and its object is to be free from the influence of heat generated by a power amplification element for high-power high-frequency waves.
It is possible to maintain electrical characteristics such as high frequency filter characteristics of filter components such as surface acoustic wave elements arranged in the vicinity thereof, and is small in size, high in performance, and low in price. An object of the present invention is to provide a high-frequency module suitable for electronic devices and devices such as LAN and WLL.

[0007]

In a high frequency module of the present invention, a power amplifying element and a filter component are mounted on one main surface of a dielectric substrate formed by laminating a plurality of dielectric layers. And forming a first penetrating conductor that penetrates the dielectric substrate to the other main surface below the power amplification element mounting section, and at least between the power amplification element mounting section and the filter component mounting section. A second penetrating conductor extending to the other main surface of the dielectric substrate is formed, and the first penetrating conductor and the second penetrating conductor are mounted on the upper surface of the external electric circuit board via a brazing material. It is characterized by that.

According to the above configuration of the present invention, the heat generated from the power amplification element is transferred to the upper surface of the external electric circuit board through the first through conductor and the brazing material formed in the lower portion of the power amplification element mounting portion. It is possible to dissipate heat efficiently to the heat dissipation conductor. Further, the heat transfer from the power amplification element to the filter component arranged in the vicinity thereof is blocked by the second penetrating conductor, and the heat transfer to the filter component can be extremely reduced. As a result, it is possible to provide a small-sized high-performance high-frequency module without deteriorating electrical characteristics such as high-frequency filter characteristics of the filter component. Moreover, with this configuration, it is not necessary to separately provide a heat dissipation member such as a heat dissipation fin for the high frequency module, and it is possible to reduce the size.

It should be noted that a power amplifying device mounting recess and / or a filter component mounting recess is formed in one main surface of a dielectric substrate formed by laminating a plurality of dielectric layers, and the power amplifying device and / or the power amplifying device are mounted in the recess. Alternatively, it is desirable to enhance reliability by sealing the filter component with a lid or an insulating resin.

A third through conductor which penetrates the dielectric substrate to the other main surface under the filter component mounting portion mounted on one main surface of the dielectric substrate formed by laminating a plurality of dielectric layers. Or by forming a conductor layer on the bottom surface of the power amplification element mounting portion and extending the conductor layer in the planar direction to connect with the second penetrating conductor, The influence can be reduced.

Further, the thermal conductivity of the dielectric layer is 20.
W / m · K or less, and the dielectric layer around the power amplifier element mounting recess is formed of a dielectric layer having a lower thermal conductivity than the dielectric layer around the filter component mounting recess. That the power amplification element mounting portion and the filter component mounting portion are separated from each other by 0.8 mm or more, and a conductor layer is formed below the filter component mounting portion,
By forming the conductor layer in a dielectric layer different from the conductor layer below the power amplification element mounting portion, without deteriorating the electrical characteristics such as high frequency filter characteristics and high frequency duplexer characteristics of the filter component, It is possible to provide a compact and high-performance high-frequency module.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION The high frequency module of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a sectional view showing an embodiment of a high frequency module of the present invention. In this example, the high frequency module 1 is mounted and mounted on an external electric circuit board 7 such as a mother board.

Dielectric substrate 2 in high frequency module 1
Is formed by laminating a plurality of dielectric layers. For the dielectric layers, low-temperature fired ceramics such as alumina ceramics, mullite ceramics, glass ceramics, or a mixed material of an organic resin material and a ceramic material is used. be able to. In particular, when Cu and Ag are used as the conductor by simultaneous firing, low-temperature firing ceramics such as glass ceramics and a mixed material of an organic resin material and a ceramic material are mentioned, and they are excellent in thermal stability. Low temperature fired ceramics such as glass ceramics are most desirable.

The thermal conductivity of the dielectric layer constituting the dielectric substrate 2 can be controlled by the ceramic material used and the mixing ratio thereof, and is 20 W / m · K or less, particularly 10 W. / M · K or less, more preferably 5 W / m · K or less, and even more preferably 3 W / m · K or less.

In the high frequency module shown in FIG. 1, a power amplification element mounting portion 2a composed of a concave portion and a flat filter component mounting portion 2b are formed on the upper surface of the dielectric substrate 2 at a predetermined interval. .

A conductor layer 2a1 is formed on the lower surface of the power amplification element mounting portion 2a, and the power amplification element 4 is electrically connected and mounted via wire bonding 3a.

As the power amplification element 4, for example, a pn junction gate type field effect transistor, a Schottky barrier gate type field effect transistor, a heterojunction type field effect transistor, a pn junction gate type heterojunction field effect transistor. Also, the power amplification element 4 is used.
The sealing resin 5 is injected between the conductor layer 2a1 and the conductor layer 2a1 for the purpose of protecting the connection portion and the element surface. As the sealing resin 5, a resin such as an epoxy resin or a silicone resin that cures when heat is applied can be used. Also, the sealing resin 5
In the high frequency module 1 of the present invention, it is desirable to use one having a thermal conductivity of 20 W / m · K or less, and preferably an epoxy resin one having a thermal conductivity of about 10 W / m · K or less. This makes it possible to suppress the heat generated by the power amplification element 4 from being transmitted to the dielectric substrate 2 itself.

A first penetrating conductor 6 that penetrates the dielectric substrate 2 to the other main surface is formed below the power amplification element mounting portion 2a. In order to easily transfer heat to the external electric circuit board 7, the first penetrating conductor 6 is preferably made to have a thermal conductivity five times or more higher than that of the dielectric substrate 2, and further, the thermal conductivity is higher. It is preferable to use one having a power of 100 W / m · K or more. Furthermore, it is desirable that the first through conductor 6 has a diameter (minor axis) of 0.1 to 0.5 mm. The penetrating conductor 6 does not necessarily have to be circular, but may have an elliptical shape or a slit shape.

The first penetrating conductor 6 is provided on the upper surface of the external electric circuit board 7 via the brazing material 13 for heat dissipation.
It is attached to 5. As a result, the heat generated from the power amplification element 4 is efficiently transferred to the heat dissipation conductor 15 formed on the surface of the external electric circuit board 7 via the first penetrating conductor 6 and the brazing material 13, and the power is transmitted. It is possible to prevent the heat generated from the amplification element 4 from exerting a thermal influence on the filter component 8 in the module.

On the other hand, on the filter component mounting portion 2b, the filter component 8 is mounted by being electrically connected to the electrode portion formed of the conductor layer 2b1 formed on the lower surface of the filter component mounting portion 2b via the conductor bump 3b. Has been done. Here, gold, solder, thermosetting Ag paste, or the like can be used for the conductor bump 3b.

Examples of the filter component 8 include a resonator type filter, a resonator ladder type and a lattice type connection filter,
Multi IDT (Inter Digital Tran)
surface acoustic wave device such as a sducer type filter or FB
AR (Film Bulk Acoustic Reso
filter element, BAW (Bulk Aco)
A rusty wave) filter element or the like is used.
In addition, a package in which the above various filter elements are housed and hermetically sealed may be used. When the filter component 8 is, for example, a resonator type filter, a 36 ° Y-cut-X propagation LiTaO ₃ crystal, 6 is used as the piezoelectric substrate.
A 4 ° Y-cut-X propagation LiNbO ₃ crystal, a 45 ° X-cut-Z propagation LiB ₄ O ₇ crystal and the like are preferably used because they have a large electromechanical coupling coefficient and a small group delay time temperature coefficient. . Further, in the filter component 8, in order to excite, propagate and resonate a surface acoustic wave on the surface of the piezoelectric substrate, at least a pair of IDTs (Inter Dig) of comb-teeth-shaped electrodes formed so as to mesh with each other are formed on the surface.
Ital Transducer) electrodes (not shown) are provided. This IDT electrode is configured by connecting a plurality of pairs of comb-teeth electrodes by a method such as serial connection or parallel connection in order to obtain desired filter characteristics. Such an IDT electrode is
Vapor deposition / sputtering or CVD on a piezoelectric substrate
It can be formed into a desired shape and size by a thin film forming method such as a method.

In the example of FIG. 1, the filter component mounting portion 2b has a sealing resin 5 such as silicone resin or epoxy resin.
However, it is also possible to mount the filter component in the recess and seal with the sealing resin 5.

According to the present invention, the second through conductor 11 extending to the other main surface of the dielectric substrate 2 is formed between the power amplification element mounting portion 2a and the filter component mounting portion 2b. Similarly to the first through conductor 6, the second through conductor 11 also includes the external electrical circuit board 7 through the brazing material 13.
Is attached to the heat dissipation conductor 15 on the upper surface of the.

By forming the second penetrating conductor 11 as described above, of the heat generated by the power amplification element 4, the heat transferred to the power amplification element mounting section 2a and both mounting sections 2
The heat transmitted to the dielectric layer between a and 2b is absorbed by the second penetrating conductor 11, and is efficiently transmitted to the heat radiating conductor 15 formed on the surface of the external electric circuit board 7 via the brazing material 13. can do.

Further, according to the present invention, the conductor layer 2a1 is formed below the power amplification element mounting portion 2a, and the conductor layer 2a1 is extended in the horizontal direction, and the second through conductor 11 is formed. Connected with. With this structure, the conductor layer 2a1 absorbs heat from the surroundings, and the second through conductor 11
Heat is introduced to the surface of the external electric circuit board 7 for heat dissipation 1
It is possible to efficiently radiate heat up to 5.

Further, according to the present invention, it is desirable to form the third penetrating conductor 23 under the filter element mounting portion 2b. Like the first through conductor 6 and the second through conductor 11, the third through conductor 23 is also formed so as to extend to the other main surface of the dielectric substrate 2, and via the brazing material 13. It is attached to the heat dissipation conductor 15 on the upper surface of the external electric circuit board 7. By forming the third penetrating conductor 23, the temperature rise of the filter element 8 itself can be reduced.

By providing not only one second penetrating conductor 11 but also two or more between the power amplification element mounting portion 2a and the filter element mounting portion 2b, the above effect can be further enhanced.

Specific examples thereof are shown in FIGS. Figure 2
It is the top view which looked at the high frequency module of FIG. 1 from the upper side,
The filter component and the power amplification element are omitted, and FIGS. 3 and 4 are plan views showing still another example.

According to the example of FIG. 2, two second penetrating conductors 11 are formed in a substantially intermediate portion between the power amplification element mounting portion 2a and the filter element mounting portion 2b which are obliquely arranged in a plan view. Is. In FIG. 3, a plurality of second penetrating conductors 11 are linearly arranged so as to surround the power amplification element mounting portion 2a. Further, FIG. 4 shows an example in which a plurality of second through conductors 11 are arranged in a zigzag pattern.

It is preferable to provide a space of 0.8 mm or more between the power amplifying element mounting portion 2a and the filter component mounting portion 2b, and more preferably 1.0 mm or more. It is possible to sufficiently reduce the heat generated by the element 4 being transmitted to the filter component 8 via the dielectric layer between the mounting portions 2a and 2b.
The distance between the power amplification element mounting portion 2a and the filter component mounting portion 2b is the shortest distance in a plan view when the mounted power amplification element and the filter component are mounted.

The first, second, and third penetrating conductors 6, 11, and 23 in the present invention are preferably formed of a metal having excellent thermal conductivity because of their functions, and particularly Cu and C are used.
It is desirable to use a conductor whose main component is a metal whose main component is at least one selected from the group consisting of uO, Ag, Ag-Pd, Ag-Pt, and Au. In particular, at least the through conductor 11 has a heat conductivity of 5 or higher than that of the dielectric substrate 2 in order to prevent heat generated by the power amplification element 4 from being transferred to the dielectric substrate 2 and further to the filter 8.
It is desirable to increase the thermal conductivity by a factor of two or more, and it is more preferable to use one having a thermal conductivity of 100 W / m · K or more.
In addition, these penetrating conductors 6, 11, and 23 are used for the dielectric substrate 2
It is desirable to form the film by co-firing, and for that purpose, an inorganic substance such as a metal oxide or glass may be contained in order to match the firing shrinkage during firing and firing with the dielectric substrate.

Such a high thermal conductivity through conductor is, for example, 80 to 90% by mass of Ag powder and 1% of lead borosilicate glass.
The thermal conductivity can be set to about 130 W / m · K or more by setting the compounding ratio of ˜4 mass% and SiO ₂ to 5 to 15 mass%.

The first, second and third through conductors 6, 11, 2
It is desirable that each of 3 has a diameter (minor axis) of 0.1 to 0.5 mm, and when a plurality of them are formed, the distance between the side surfaces of adjacent through conductors is 0.2 to 1.0 mm. By arranging the through conductors at intervals, it is possible to improve the heat transfer efficiency by the plurality of through conductors while suppressing the occurrence of cracks in the dielectric between the through conductors. Further, these penetrating conductors 6, 11, and 23 do not necessarily have to be circular, and may have an elliptical shape or a slit shape.

Further, in the high frequency module of the present invention, as shown in FIG. 1, the power amplification element mounting portion 2a and the filter component mounting portion 2b are formed to have different depths by forming recesses and the like, and the dielectric substrate 2 is formed. Conductor layer 2a1 formed on the bottom surface of the power amplification element mounting portion 2a formed in the above, and conductor layer 2b1 formed on the bottom surface of the filter component mounting portion 2b.
Are formed in different dielectric layers, respectively, so that they are transmitted from the power amplification element 4 to the filter component 8 via the dielectric layer and the conductor layer, as compared with the case where they are formed on the same dielectric layer. It is possible to reduce the amount of heat more effectively, and it is possible to more reliably prevent the deterioration of the electrical characteristics due to the thermal influence of the filter component 8.

In the high frequency module 1 of the present invention,
In order to make the power amplification element 4 and the filter component 8 electrically function, the inner conductor wiring 16, the surface conductor wiring 17, and the via-hole conductor 1 are formed on the surface or inside of the dielectric substrate 2.
8 to form an electronic circuit on the upper surface of the dielectric substrate 2, a resistor, a capacitor, an inductor, a semiconductor element, M
EMS (Micro Electro Mechanical)
An electronic component 12 such as an Al Systems) is mounted to form a desired electronic circuit. In addition, if necessary, inside the dielectric substrate 2, a capacitor using conductor wiring,
By incorporating a high-frequency filter (not shown) including an inductor or the like, it is possible to configure the high-performance and compact high-frequency module 1.

Further, by attaching the metal shield case 14 for the purpose of protecting the electronic parts 12 and the circuit mounted on the surface of the high frequency module 1, the external mechanical stress, the influence of the atmosphere and the electromagnetic noise are shielded. Alternatively, it can be suppressed.

Furthermore, by incorporating an electronic component 12 such as a varistor or a chip inductor on the surface of the high frequency module 1 or an inductor inside the dielectric substrate 2, the high frequency module 1 against static electricity can be constructed.

In the high frequency module 1, the electrode pads 20 formed on the high frequency module 1 are formed on the surface of the external electric circuit board 7 via the brazing material 13 for signal transmission to the external electric circuit board 7. And the connected signal wiring layer 21.

FIG. 5 is a sectional view showing another example of the high-frequency module of the present invention. In the example of FIG. 1, the filter component mounting portion 2b is surface-mounted on the main surface, but in FIG. 5, the filter component mounting portion 2b is formed in the concave portion, and as in FIG. Conductor layer 2 formed on the bottom surface of the
It is mounted on b1. Furthermore, the filter component 8 may be connected to the signal line by wire bonding.

In the high frequency module of FIG. 5, the lid 9 is attached to the recessed filter component mounting portion 2b so as to be separated from the filter component 8. The lid 9 is a vibration space for the filter component mounting portion 2 for the purpose of mechanical protection of the filter component 8 and suppression of deterioration due to oxidation of the IDT electrode.
A low humidity air or the like is enclosed in the inner space of b and is attached using an epoxy resin, a brazing material or the like to hermetically seal the filter component 8. Even if an inert gas such as nitrogen gas or argon gas or an inert gas having a lower thermal conductivity than air is sealed instead of air, the deterioration of the IDT electrode due to oxidation can be prevented.

The material used for the lid 9 is SU
Metals such as S, copper, nickel silver, and resins such as glass epoxy resin can be used.

Also in the embodiment of FIG. 5, the second penetrating conductor 11 is formed in the portion located between the filter component mounting portion 2b and the power amplification element mounting portion 2a, as in FIG. At this time, one end of the penetrating conductor 11 is exposed on the lower surface of the module 1 and is brazed to the heat dissipation conductor 15 via the brazing material 13, as in FIG. 1, but the other end is extended from the conductor layer 2a1. It may be connected to the installation portion and further extended to the upper surface side.

FIG. 6 is a schematic cross-sectional view showing still another example of the high frequency module of the present invention. In the examples of FIGS. 1 and 5, the dielectric substrate 2 is formed of the same material, but in FIG. 6, the dielectric substrate 2 having a lower thermal conductivity than the other portions is provided around the power amplification element mounting portion 2a. By being formed of a body material, the low thermal conductive dielectric material around the mounting portion 2a functions as a heat insulating material and prevents heat generated from the power amplification element 4 from being diffused and transferred to the surroundings. You can

The high-frequency module of the present invention can be manufactured by a conventionally known method. Here, as a preferred example, a case where the dielectric substrate is made of a composition capable of low temperature firing such as glass ceramics will be briefly described below.

First, in order to form each dielectric layer on the dielectric substrate 2, a ceramic green sheet made of a glass ceramic composition to be each dielectric layer is prepared. The ceramic green sheet to be the dielectric layer is a known glass such as borosilicate glass, borosilicate zinc glass, SiO ₂ —Al ₂ O ₃ -alkaline earth oxide, 30 to 90% by mass.
A mixture of inorganic fillers such as alumina, quartz, mullite, AlN, and forsterite in a proportion of 10 to 70% by mass, an organic binder such as alkyl methacrylate, a plasticizer such as DBP (dibutyl phthalate), and toluene such as toluene. An organic solvent is mixed and kneaded with a ball mill for 4 to 8 hours to prepare a slurry. Using this slurry, tape molding is performed by a doctor blade method or the like, and the tape is cut into a predetermined size.

Then, the through conductor 11, the internal conductor wiring 16 and the surface conductor wiring 1 are provided on a predetermined ceramic green sheet.
Via hole 18 for connecting with 7, a recess for mounting a power amplifying element or a filter component, a through hole for a through conductor, a micro drill, punching, or a photosensitive resin. It is possible to form recesses and through holes having various shapes such as various circular shapes, elliptical shapes, and long holes by performing processing such as exposure and development processing on the green sheet including.

Then, of these, the through holes for the through conductor 11 and the via-hole conductor 18 are filled with Cu or Ag-based conductor paste. At the same time, the inner layer conductor wiring 16, the surface layer conductor wiring 17, the conductor layers 2a1 and 2 are provided on each green sheet.
The pattern b1 is formed by printing using a Cu or Ag-based conductor paste by a screen printing method, a gravure printing method, or the like.

Here, the Cu or Ag-based conductor paste includes, for example, Cu powder, CuO powder, Ag powder, and A
Ag-Pd powder and Ag-Pt powder, which are g-alloys, can be used, and if necessary, for example, a predetermined amount of borosilicate low-melting glass, SiO ₂ , Al ₂ O ₃ , MgO, CaO.
Alkaline earth metal oxides such as, and metal oxides such as Bi ₂ O ₃ are further added, an organic binder such as ethyl cellulose, and an organic solvent such as 2,4-trimethyl-1,3-pentanediol monoisobutyrate. A material obtained by mixing and homogeneously kneading is used.

These metal powders and, if necessary, a predetermined amount of zinc borosilicate glass, borosilicate low melting glass such as lead borosilicate glass, Al ₂ O ₃ , Mg
Inorganic substances such as metal oxides such as O, CaO, SiO ₂ , and Bi ₂ O ₃ ; organic binders such as ethyl cellulose;
A mixture obtained by homogeneously kneading with an organic solvent such as 4-trimethyl-1,3-pentanediol monoisobutyrate is used. The thermal conductivity depends on the ratio of the low melting point glass and the metal oxide added to the metal powder. Can be controlled.

The ceramic green sheets obtained as described above are aligned with, for example, the via-hole conductors 18 as a reference, laminated according to the laminating order, and thermocompression bonded to form an unfired laminated body.

Next, the unfired laminate is fired in, for example, an oxidizing atmosphere to be sintered and integrated. Specifically, 800 to 1000 ° C. in an oxygen atmosphere or an air atmosphere
A sintered substrate can be manufactured by firing at.

After that, the filter component 8, the power amplification element 4 and the like are mounted in the mounting portions 2a and 2c, the lid 9 is brazed, and the sealing organic resin 19 is filled and sealed.

When the module is mounted on the external electric circuit board 7, the electrode pads for signal transmission of the normal module are brazed, and at the same time, the first through conductor 6, the second through conductor 11, The third penetrating conductor 23 is brazed to the heat dissipation conductor 15 formed on the surface of the external electric circuit board 7.

Further, as shown in FIG. 6, when the periphery of the power amplification element mounting portion 2a is formed of a dielectric material having a heat insulating property, a photosensitive resin is mixed with an ordinary dielectric substrate material, and development exposure is performed. After forming a predetermined recessed portion, a heat insulating dielectric material is filled into the recessed portion, and the recessed portion is formed by punching or the like to prepare an unfired laminated body, and then firing may be performed. .

[0056]

EXAMPLE A dielectric material composed of 70% by mass of borosilicate glass and 30% by mass of alumina has a thermal conductivity of 2 W /
A high frequency module was manufactured as described above using a glass ceramic dielectric material of m · K and a through conductor of 150 W / m · K of Ag based conductive material. The glass woven fabric-epoxy resin composite material The heat-dissipating conductor and signal wiring layer made of copper were formed on the insulating substrate made of Cu, and the Cu-Ag brazing material was used for mounting on the mother board surface.

In addition, the power of the power amplification element (PA) is turned on.
With the / OFF ratio (duty ratio) set to 1/8, 0d
The input signal of B was input and the conditions were set so that an output of 33.5 dBm was obtained, and the steady temperature in the power amplification element mounting portion and the filter component mounting portion was measured.

Also, using a heat conduction analysis simulation program, the temperatures of the dielectric substrates when they were changed were calculated.

[0059]

[Table 1]

From the results of Table 1, according to the structure of the present invention,
It has been found that by providing the first through conductor and the second through conductor, it is possible to effectively dissipate the heat of the power amplification element and reduce the influence on the filter component.

Further, in such a structure, it is understood that the larger the number of the second penetrating conductors and the smaller the thermal conductivity of the dielectric substrate, the more excellent the effect. It was also found that similar results can be obtained when the dielectric substrate is made of two kinds of dielectric materials.

[0062]

As described above in detail, according to the present invention, the heat generated by the power amplifying element can be efficiently dissipated to the heat dissipation conductor of the external electric circuit board, and the power amplifying element can be provided in the vicinity thereof. Since it is possible to significantly reduce heat transfer to the placed filter components, a compact and high-performance high-frequency module is provided without deteriorating the electrical characteristics such as high-frequency filter characteristics and high-frequency duplexer characteristics of the filter components. can do. In addition, a high-frequency module suitable for electronic equipments / devices such as low-priced portable information terminals does not need a separate heat dissipation member such as a heat dissipation fin.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing an example of an embodiment of a high-frequency module of the present invention.

FIG. 2 is a schematic plan view showing an example of arrangement of through conductors in the high-frequency module of the present invention.

FIG. 3 is a schematic plan view showing another example of arrangement of through conductors in the high-frequency module of the present invention.

FIG. 4 is a schematic plan view showing still another example of arrangement of through conductors in the high-frequency module of the present invention.

FIG. 5 is a schematic cross-sectional view showing another example of the embodiment of the high-frequency module of the present invention.

FIG. 6 is a schematic sectional view showing still another example of the embodiment of the high-frequency module of the present invention.

[Explanation of symbols]

1 ... High-frequency module 2 ... Dielectric substrate 2a --- Power amplifier element mounting part 2b ・ ・ ・ ・ ・ ・ Filter component mounting part 2a1, 2b1 and conductor layer 3a ... Wire bonding 3b ··· Conductor bump 4 ... Power amplification element 6 ... First through conductor 7 ... External electric circuit board 8 ... Filter parts 9 ... Lid 11 ... Second through conductor 13 --- Brazil material 15, 24 ... Heat dissipation conductor 23 ... Third through conductor

Claims (8)

[Claims] 1. A power amplification device and a filter component are mounted on one main surface of a dielectric substrate formed by laminating a plurality of dielectric layers, and the power amplification device and the filter component are mounted on the lower surface of the power amplification device mounting portion. A first penetrating conductor that penetrates the dielectric substrate to the other main surface is formed, and extends to at least the other main surface of the dielectric substrate between at least the power amplification element mounting portion and the filter component mounting portion. A high-frequency module, wherein the second through conductor is formed, and the first through conductor and the second through conductor are mounted on the upper surface of the external electric circuit board via a brazing material. 2. A power amplifying device mounting recess and / or a filter component mounting recess is formed in one main surface of a dielectric substrate formed by laminating a plurality of dielectric layers, and the power amplifying device and / or The high frequency module according to claim 1, wherein the filter component is sealed with a lid or an insulating resin. 3. A third through conductor which penetrates the dielectric substrate to the other main surface below the filter component mounting portion mounted on one main surface of the dielectric substrate formed by laminating a plurality of dielectric layers. The high frequency module according to claim 1 or 2, wherein the high frequency module is formed. 4. A conductor layer is formed on a bottom surface of the power amplification element mounting portion, and the conductor layer is extended in a plane direction and connected to the second penetrating conductor. The high frequency module according to claim 3. 5. The thermal conductivity of the dielectric layer is 20 W / m · K.
It is the following, The high frequency module in any one of Claim 1 thru | or 4. 6. The dielectric layer around the power amplifier element mounting recess is formed of a dielectric layer having a lower thermal conductivity than the dielectric layer around the filter component mounting recess. The high frequency module according to any one of claims 1 to 5. 7. The high frequency module according to claim 1, wherein the power amplification element mounting portion and the filter component mounting portion are separated from each other by 0.8 mm or more. 8. A conductor layer is formed below the filter component mounting portion, and the conductor layer is formed on a dielectric layer different from the conductor layer below the power amplification element mounting portion. The high frequency module according to any one of claims 1 to 7.