JP2003318133A - Film pattern forming method, film pattern forming apparatus, conductive film wiring, semiconductor chip mounting structure, semiconductor device, light emitting device, electro-optical device, electronic equipment, and non-contact card medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film pattern forming method and a film pattern forming apparatus capable of forming a highly accurate film pattern in a simple process, a conductive film wiring, a semiconductor chip mounting structure, and a semiconductor device. , Light-emitting devices, electro-optical devices, electronic equipment,
And a contactless card medium. A method for forming a film pattern according to the present invention forms a film pattern by discharging droplets made of a liquid material containing a film forming component to a predetermined film forming region on a substrate by a droplet discharging method. Forming a plurality of film patterns at adjacent positions by discharging a plurality of droplets that do not mix with each other.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to an electrode, an antenna,
The present invention relates to a conductive film wiring used for wiring of electronic circuits, integrated circuits, etc., a method for forming a film pattern such as an insulating film for protecting the conductive film wiring, and a film pattern forming apparatus.

The present invention also relates to a film pattern forming method and a film pattern forming apparatus for forming each layer constituting an electro-optical device.

Furthermore, the present invention provides a semiconductor chip mounting structure, a semiconductor device, a light emitting device, an electro-optical device, an electronic device,
And a non-contact type card medium.

[0004]

BACKGROUND ART A method has been developed in which a predetermined material is discharged onto a substrate by an inkjet method to form wirings and layers included in various electro-optical devices in a predetermined pattern. For example, U.S. Pat. No. 5,132,248 proposes a method in which a liquid material in which conductive fine particles are dispersed is directly pattern-coated on a substrate by an inkjet method, and then heat treatment or laser irradiation is performed to convert it into a conductive film pattern. According to this method, there is an advantage that the wiring forming process is greatly simplified and the amount of raw materials used is small.

By the way, with the recent miniaturization of elements, wirings and insulating layers included in various electro-optical devices have been miniaturized. Among them, the wiring used for electronic circuits, electrodes, and integrated circuits is becoming finer, and there is a greater possibility that adjacent wirings come into contact with each other to cause a short circuit. Therefore, it is important to ensure insulation between the wirings by accurately patterning the wirings.

On the other hand, in the case of forming a light emitting device, for example, an organic EL device, a plurality of layers (for example, a light emitting layer and a hole transporting / injecting layer) forming the organic EL device can be formed by an ink jet method. . In this case, generally, a plurality of different materials are sequentially applied. When the organic EL device is driven, charges (holes or electrons) move between the plurality of layers forming the organic EL device. In order to obtain a highly efficient organic EL device, it is important to enhance the mobility of charges between these layers. By forming the interfaces of these layers uniformly, the mobility of charges can be enhanced.

[0007]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a film pattern forming method and a film pattern forming apparatus which can be formed by a simple method and have high precision.

Further, an object of the present invention is to provide a film pattern forming method and a film pattern forming apparatus for forming each layer constituting a light emitting device or a semiconductor device, and a light emitting device formed by the film pattern forming method. The present invention relates to a semiconductor device.

Further, the present invention relates to a conductive film wiring formed by the method for forming a film pattern, a semiconductor chip mounting structure including the conductive wiring, an electro-optical device, an electronic device, and a non-contact type card medium. .

[0010]

(Means for Solving the Problem) (Method for Forming Film Pattern) In the method for forming a film pattern according to the present invention, droplets made of a liquid containing a film-forming component are formed on a substrate by a droplet discharge method. A method for forming a film pattern by ejecting the film pattern to a film forming region, wherein a plurality of film patterns are formed at adjacent positions by ejecting a plurality of droplets that are not mixed with each other. Including.

According to the film pattern forming method of the present invention,
It is possible to accurately form a plurality of film patterns at adjacent positions by a simple method. Details will be described in the section of the present embodiment.

The method of forming a film pattern of the present invention comprises (1)
(6) can be adopted.

(1) The plurality of film patterns formed at the adjacent positions may have different functions. According to this method, it is possible to simultaneously form a plurality of film patterns having different functions, so that it is possible to improve the efficiency of the steps of the manufacturing process. Furthermore, each of the plurality of patterns can be formed into a desired shape.

(2) The plurality of film patterns are formed so as to be adjacent to each other in the direction parallel to the substrate by ejecting the plurality of droplets to positions adjacent to each other in the direction parallel to the substrate. You can

(3) The plurality of film patterns can be formed so as to be adjacent to the substrate in the vertical direction by superimposing and ejecting the plurality of droplets at substantially the same position.

In this case, the liquid material forming one of the plurality of liquid droplets has a lower boiling point than the liquid material forming the liquid droplets formed above the one liquid droplet. You can According to this method, it is possible to more easily remove the liquid substance forming the first droplet.

In this case, the plurality of film patterns can be formed in the recess by discharging the plurality of droplets into the recess provided in the substrate. At this time, after ejecting the plurality of droplets to the recess, centrifugal force may be applied to the plurality of droplets to promote separation of the plurality of droplets. According to this method, the plurality of droplets are easily separated, and the film quality can be made uniform in a short time.

(4) The plurality of droplets are composed of a first droplet and a second droplet, and the first droplet is a liquid substance containing conductive fine particles as the film forming component, The second droplet may be a liquid material containing an insulator as the film forming component. According to this method, the insulating film can be formed together with the conductive film. Further, since the conductive film can be formed by an accurate and simple method, defects such as disconnection and short circuit hardly occur, and conductive film wiring having excellent reliability can be obtained.

In this case, a conductive film can be formed from the first droplet and an insulating film can be formed from the second droplet. According to this method, the insulating film can be formed together with the conductive film, so that the efficiency of the steps of the manufacturing process can be improved.

In this case, the conductive film can be formed by performing heat treatment and / or light irradiation on the first droplet. According to this method, the film forming component contained in the first droplet can be solidified by a simple method.

(5) Further, a lyophilic pattern and a lyophobic pattern are formed on a predetermined region of the substrate, and the plurality of droplets are provided with the lyophilic pattern and the lyophobic pattern. By ejecting onto the region, the plurality of film patterns can be formed on the lyophilic pattern. According to this method, by forming the lyophilic pattern in a region where the plurality of film patterns are desired to be formed, the plurality of film patterns can be selectively formed in a desired region. A film pattern having a shape can be formed.

For example, in the case where the substrate processing for applying the plurality of droplets to a desired area is performed in advance, for example,
The substrate is made lyophilic by irradiating with UV, for example, heptadecafluoro-1,1,2,2 tetrahydrodecyltriethoxysilane, tridecafluoro-1,
The substrate is made lyophobic by using fluoroalkylsilane (FAS) typified by 1,2,2 tetrahydrooctyltriethoxysilane and the like, and the lyophilic property is obtained at a desired position by UV pattern irradiation of the FAS. A liquid pattern and the liquid repellent pattern can be created. As a result, the film pattern can be accurately formed.

(6) By simultaneously removing the liquid material contained in each of the plurality of droplets by evaporation and / or decomposition, the interfaces of the plurality of film patterns can be formed without exposing to the atmosphere. . According to this method, the interface between the plurality of film patterns can be formed in a good state, so that the function of the film pattern can be enhanced.

(Membrane Pattern Forming Apparatus) In the film pattern forming apparatus of the present invention, droplets made of a liquid containing a film forming component are discharged to a predetermined film forming region on a substrate by a droplet discharging method. A film pattern forming apparatus for forming a film pattern by using the above-described film pattern forming method.

According to the film pattern forming apparatus of the present invention,
A plurality of film patterns can be accurately and easily formed at adjacent positions.

The film pattern forming apparatus may include one head capable of ejecting the plurality of droplets. In addition, a dedicated head can be installed for each of the droplets forming the plurality of droplets. Further, a mixing unit that mixes the plurality of liquid droplets is included, and the plurality of liquid droplets can be discharged after being mixed by the mixing unit.

(Mounting Structure of Conductive Film Wiring and Semiconductor Chip and Electro-Optical Device) The conductive film wiring of the present invention is formed by the film pattern forming method of the present invention. The semiconductor chip mounting structure of the present invention and the electro-optical device of the present invention include the conductive film wiring of the present invention.

According to the conductive film wiring of the present invention, it is possible to obtain a fine conductive film wiring which is obtained by a simple method, is less likely to cause defects such as disconnection and short circuit.

(Semiconductor Device) A semiconductor device of the present invention includes a source electrode, a drain electrode, and a gate electrode, and an insulating layer that insulates the electrodes from each other, and the electrode and the insulating layer are the same as those of the present invention. It is formed through a method of forming a film pattern.

(Light Emitting Device) The light emitting device of the present invention comprises a light emitting layer and a hole transporting / injecting layer, and a pair of electrode layers sandwiching the light emitting layer and the hole transporting / injecting layer. The layer and the hole transport / injection layer are formed by the method for forming a film pattern of the present invention.

(Electronic Device and Non-contact Card Medium) An electronic device of the present invention includes the electro-optical device of the present invention, the semiconductor device of the present invention, and / or the light emitting device of the present invention. Further, the non-contact type card medium of the present invention includes the conductive film wiring of the present invention as an antenna circuit.

[0032]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below with reference to the drawings.

[First Embodiment] As a first embodiment, a method of forming a conductive film wiring, which is an example of the film pattern forming method of the present invention, will be described. In the present invention, the droplet discharge method is a method of forming a material substance having a desired pattern on a substrate by discharging droplets in a desired pattern, and is also called an inkjet method. However, in this case, the discharged droplets are not so-called inks used for printed matter, but a liquid material containing a material substance forming a device, and the material substance functions as, for example, a conductive substance or an insulating substance forming a device. It contains the substance to be obtained. Furthermore, the droplet discharge is not limited to the case of being sprayed at the time of discharge, but also includes the case where one droplet of the liquid material is continuously applied.

FIG. 1 is a sectional view schematically showing a method of forming a film pattern according to the first embodiment to which the present invention is applied, and FIG. 2 shows a film pattern according to the first embodiment. It is a top view which shows typically the film pattern formed by the forming method. The substrate 10 shown in FIG. 1 corresponds to the cross section taken along the line AA of FIG.

The wiring forming method according to this embodiment is mainly
The discharge step of the first and second droplets 22a and 24a and the solidification step are included. Hereinafter, each step will be described.

(Discharging Step) In the discharging step, a film for forming a film pattern is formed by discharging a liquid droplet containing a film-forming component into a predetermined film forming region on a substrate by a droplet discharging method. In the method of forming a pattern, a liquid material containing conductive fine particles (first droplets) and a liquid material containing an insulator (second droplets) are discharged. In the present embodiment, the liquid substance (first droplet 22
The liquid (a) and the liquid containing the insulator (the second droplet 24a) have the property of not being mixed with each other.

In the present embodiment, as shown in FIG. 1, a nozzle 11a for ejecting a liquid material containing conductive fine particles (first droplet 22a) and a liquid material containing an insulator (second liquid). The inkjet head 12 in which the nozzles 11b for ejecting the droplets 24a) are installed alternately is used. While moving the inkjet head 12 in the Y direction shown in FIG. 1, the first droplet 22a and the second droplet 24a are moved to the substrate 1
By ejecting to a position adjacent to the direction parallel to 0 (X direction in FIG. 1), the liquid is discharged onto the substrate 10 (-Z in FIG. 1).
In the direction). This makes the first
Droplets 22a and second droplets 24a are alternately arranged in the X direction of FIG. 1 and a pattern extending in the Y direction of FIGS. 1 and 2 is formed (see FIG. 2).

Liquid material containing conductive fine particles (first droplet 2
2a) and a liquid containing an insulator (second droplet 24a)
There is no particular limitation on the materials of the materials as long as they do not mix with each other.

As the liquid material containing conductive fine particles, a liquid material (dispersion liquid) in which conductive fine particles are dispersed in a liquid material (dispersion medium) is used. The conductive fine particles used here are gold,
In addition to metal fine particles containing any one of silver, copper, palladium, and nickel, fine particles of conductive polymers and superconductors are used.

In order to improve dispersibility, these conductive fine particles may be used by coating the surface with an organic substance or the like. Examples of the coating material for coating the surface of the conductive fine particles include polymer materials such as gelatin and polyvinyl alcohol, and citric acid.

The dispersion medium used is not particularly limited as long as it can disperse the above-mentioned conductive fine particles and does not cause aggregation.

As the liquid material containing the insulator, a liquid material in which the insulator is dispersed in a dispersion medium or a liquid material obtained by dissolving the insulator in a solvent is used. The material of the insulator used here is not particularly limited, and an inorganic material such as silicon oxide or silicon nitride, or an organic material such as a polyimide resin or an epoxy resin can be used.

As a combination of the first droplet 22a and the second droplet 24a, for example, a particle dispersion liquid (manufactured by ULVAC, Inc .; trade name Perfect Silver (main solvent: toluene)) is used as the first droplet 22a. As the second droplet 24a, Pymel manufactured by Asahi Kasei Kogyo Co., Ltd. (main solvent: N-methyl-
2-pyrrolidone) can be used. Alternatively, for example, as the first droplet 22a, the conductive fine particles are dispersed in a phenol resin or an epoxy resin, and if necessary, a solvent, a curing agent, a dispersant, an antioxidant, or the like is mixed, and the second droplet 22a is used. A solder resist containing an epoxy resin or the like as a main component can be used as the droplet 24a. In this case, the phenol resin or epoxy resin can be cured by heat treatment and / or light irradiation.

The substrate on which the wiring is to be formed is S
Various materials such as i-wafer, quartz glass, glass, plastic film, and metal plate can be used. In addition, semiconductor films, metal films,
A dielectric film, an organic film, or the like formed as a base layer can also be used as a substrate on which wiring is to be formed.

(Solidifying Step) Next, after the first and second droplets 22a and 24a are discharged onto the substrate 10, the dispersion medium and the solvent contained in these droplets are removed to obtain the first droplet. The film forming components contained in the first and second droplets 22a and 24a are solidified.

The solidifying step is carried out, for example, by subjecting the first droplet 22a and the second droplet 24a to heat treatment and / or light irradiation. By this process,
The conductive film 22 and the insulating film 24 are formed. For example, the liquid material contained in the first droplet 22a and / or the second droplet 24a is evaporated and / or decomposed by heat treatment, so that the liquid material is removed from the droplet, and thus the liquid droplet is removed. The film-forming components contained in solidify, and the conductive film 2
2 and the insulating film 24 are formed. Or, for example,
By the light irradiation, the film forming component contained in the first droplet 22a and / or the second droplet 24a is solidified (cured),
The conductive film 22 and the insulating film 24 are formed. According to this method, the film-forming components contained in the first droplet and the second droplet can be solidified by a simple method.

First droplet 22a and second droplet 24a
A heat treatment is performed on the conductive film 22 and the insulating film 24.
In the case of forming, a process such as an ordinary hot plate for heating the substrate 10 or an electric furnace, or a lamp annealing can be performed. The light source of light used for lamp annealing is not particularly limited, but an infrared lamp, a xenon lamp, a YAG laser, an argon laser,
Carbon dioxide laser, XeF, XeCl, XeBr, Kr
An excimer laser such as F, KrCl, ArF, or ArCl can be used as a light source.

Further, in this case, the heat treatment process can be carried out in parallel with the discharging process at the same time. For example, by ejecting the droplets onto the substrate 10 which has been heated in advance, or by cooling the inkjet head 12 (see FIG. 1) and using a dispersion medium having a low boiling point, the liquid can be transferred to the substrate 10. Evaporation can proceed immediately after the droplet has landed. Through the above steps, as shown in FIGS. 1 and 2, a plurality of film patterns (conductive film 22 and insulating film 24) are formed at adjacent positions. In the present embodiment,
An example is shown in which a plurality of conductive films 22 and insulating films 24 are formed so as to be alternately adjacent to each other in a direction parallel to the substrate 10 (here, the Y direction). That is, as shown in FIG.
0, a plurality of conductive films 22 are arranged via an insulating film 24. Therefore, in the present embodiment, the plurality of patterns (conductive film 22 and insulating film 24) formed at adjacent positions have different functions. According to this method, a plurality of film patterns having different functions (the conductive film 22 and the insulating film 24) can be simultaneously formed, so that the efficiency of the steps of the manufacturing process can be improved.
In addition, the conductive film 22 and the insulating film 24 can be formed in desired shapes.

According to the film pattern forming method of the present embodiment, it is possible to form a plurality of film patterns at adjacent positions with high accuracy and by a simple method.

In the present embodiment, a conductive film wiring forming method is exemplified as an example of the film pattern forming method. According to this method, it is possible to form a conductive film wiring that is highly reliable and is highly reliable, while ensuring insulation between adjacent conductive film wirings, while preventing defects such as disconnection and short circuit from occurring with high precision and a simple method. You can For the reason,
Hereinafter, description will be made in comparison with formation of a general conductive film wiring using an inkjet method.

In a general conductive film wiring forming method using the ink jet method, as shown in FIG. 27, a droplet (first droplet) containing a conductive material is discharged (S11),
Then, after the dispersion medium (solvent) contained in the droplets is removed by a solidification step (S12), a film quality inspection and a positioning step are performed (S13, S14), and then droplets containing an insulator (second droplets). ) Is discharged (S15), and then a conductive film and an insulating film are formed by a solidification process (S16).

On the other hand, according to the method of forming the conductive film wiring of the present embodiment, as shown in FIG. 26, after discharging the droplet containing the conductive material (S2), the insulator is continuously formed. The containing droplet is discharged (S3). Then, a conductive film and an insulating film are formed by a solidification process (S4).

As described above, according to the conductive film wiring forming method of the present embodiment, the insulating film can be formed together with the conductive film, so that the efficiency of the manufacturing process can be improved. . For example, when the liquid material (dispersion medium) contained in the first and second droplets is removed by heat treatment such as evaporation, the step of removing the liquid material is performed once, so that the manufacturing process is simplified. Can be achieved.

Furthermore, according to the conductive film wiring forming method of the present embodiment, fine conductive film wiring can be accurately formed.

As described above, in the present embodiment, the wiring forming method has been described as an example of the film pattern forming method of the present invention, but the film pattern forming method of the present invention is not limited to the wiring forming method. However, the present invention is not limited to this, and a plurality of droplets may be formed as long as a plurality of film patterns are formed at adjacent positions by ejecting a plurality of droplets that are not mixed with each other by a droplet discharge method. The material (the material forming the plurality of film patterns) is not particularly limited. For example, each layer (for example, a light emitting layer and a hole transporting / injecting layer) forming the organic EL device can be formed by using the film pattern forming method of the present invention. Further, in the present embodiment, the case where two types of droplets to be ejected, that is, the first droplet and the second droplet have been described, but the number of ejected droplets may be two or more. These points are the same in the film pattern forming methods of the sixth and ninth embodiments described later.

[Second Embodiment] In the second embodiment, as an example of a film pattern forming apparatus to which the present invention is applied, a wiring for carrying out the wiring forming method according to the first embodiment described above. The forming device will be described. Note that the film pattern forming apparatus according to this embodiment can be similarly applied to other embodiments described later.

FIG. 3 is a schematic perspective view of the wiring forming apparatus according to this embodiment. As shown in FIG. 3, the wiring forming apparatus 100 includes an inkjet head group 1, an X-direction guide shaft 2 for driving the inkjet head group 1 in the X direction, and an X-direction drive motor for rotating the X-direction guide shaft 2. 3 and 3.

The mounting table 4 for mounting the substrate W thereon
And a Y-direction guide shaft 5 for driving the mounting table 4 in the Y-direction, and a Y-direction drive motor 6.

The X-direction guide shaft 2 and the Y-direction guide shaft 5 each include a base 7 fixed to a predetermined position, and a control device 8 is provided below the base 7.

Further, the cleaning mechanism portion 14 and the heater 15 are provided.

The ink jet head group 1 is provided with an ink jet head for ejecting a dispersion liquid containing conductive fine particles and a dispersion liquid containing an insulator from nozzles (ejection ports) and applying them to a substrate at predetermined intervals. ing. In this inkjet head, a dedicated inkjet head can be installed for each of the dispersion liquid containing conductive fine particles and the dispersion liquid containing an insulator. Then, the dispersion liquid can be individually ejected from each of these inkjet heads in accordance with the ejection voltage supplied from the control device 8. The dispersion liquid containing the conductive fine particles and the dispersion liquid containing the insulator may be ejected by the same inkjet head.

The ink jet head group 1 is fixed to the X-direction guide shaft 2, and the X-direction guide motor 2 is connected to the X-direction guide shaft 2. The X-direction drive motor 3 is a stepping motor or the like, and is configured to rotate the X-direction guide shaft 2 when a drive pulse signal in the X direction is supplied from the control device 8. When the X-direction guide shaft 2 is rotated, the inkjet head group 1 moves in the X-axis or -X-axis direction with respect to the base 7.

The mounting table 4 mounts the substrate W to which the dispersion liquid is applied by the wiring forming apparatus 100, and has a mechanism for fixing the substrate W at the reference position.

The mounting table 4 is fixed to the Y-direction guide shaft 5,
The Y-direction drive shafts 6 and 16 are connected to the Y-direction guide shaft 5. The Y-direction drive motors 6 and 16 are moving units including stepping motors and the like, and are configured to release the Y-direction guide shaft 5 when a drive pulse signal in the Y-axis direction is supplied from the control device 8. Then, when the Y-direction guide shaft 5 is released, the mounting table 4 moves in the Y-axis or −Y-axis direction with respect to the base 7.

The cleaning mechanism section 14 has a mechanism for cleaning the ink jet head group. The cleaning mechanism unit 14 is configured to move along the Y-direction guide shaft 5 by the Y-direction drive motor 16. The movement of the cleaning mechanism unit 14 is also controlled by the control device 8.

The heater 15 is a means for heat-treating the substrate W by lamp annealing here, and is a heat treatment for evaporating the liquid material contained in the droplets discharged onto the substrate and converting it into a conductive film or an insulating film. Is designed to do. The controller 8 also controls the turning on and off of the power of the heater 15. When the droplets are solidified by light irradiation, a light irradiation device can be installed instead of the heater 15.

In the wiring forming apparatus 100 of this embodiment, in order to discharge the dispersion liquid to a predetermined wiring forming region,
A predetermined drive pulse signal from the control device 8 is supplied to the X-direction drive motor 3 and / or the Y-direction drive motor 6,
By moving the inkjet head group 1 and / or the mounting table 4, the inkjet head group 1 and the substrate W (mounting table 4) are relatively moved. Then, during this relative movement, an ejection voltage from the control device 8 is supplied to a predetermined inkjet head in the inkjet head group 1 to eject the dispersion liquid from the inkjet head.

In the wiring forming apparatus 100 of the present embodiment, the amount of droplets ejected from each head of the inkjet head group 1 can be adjusted by the magnitude of the ejection voltage supplied from the controller 8.

The pitch of the liquid droplets discharged onto the substrate W depends on the relative movement speed between the inkjet head group 1 and the substrate W (mounting table 4) and the discharge frequency from the inkjet head group 1 (frequency of discharge voltage supply). It is determined.

According to the film pattern forming apparatus of the present embodiment, a plurality of film patterns can be accurately and easily formed at the adjacent positions.

[Third Embodiment] In the third embodiment, an example of a conductive film wiring to which the present invention is applied will be described.

FIG. 4 is a plan view schematically showing conductive film wiring according to the third embodiment of the present invention. In FIG. 4, the insulating film 24 formed between the wirings
Illustration (see FIG. 5A) is omitted. Figure 5
FIG. 5A is an enlarged schematic diagram of a region B shown in FIG.
(B) is a figure which shows typically the cross section along CC of Fig.5 (a).

In this embodiment, the case where the conductive film 22 and the insulating film 24 obtained by the wiring forming method of the first embodiment are applied to the rearrangement wiring of the semiconductor IC chip 30 will be described. Further, the conductive film 22 and the insulating film 24 can be formed by the wiring forming device according to the second embodiment.

As shown in FIG. 4, the semiconductor IC chip 30 has terminals 34 formed in the vicinity of the outer edge portion and the terminals 34.
The rearrangement terminal 32 formed inside 4 is formed. The terminals 34 and the rearrangement terminals 32 are electrically connected by the wiring (conductive film wiring) 22. That is, the conductive film 22 functions as a rearrangement wiring.

The semiconductor IC chip 30 has a portion where the conductive film 22 is densely formed, such as the region B. Since the conductive film wiring according to the present embodiment is formed by the wiring forming method according to the first embodiment using the wiring forming apparatus according to the second embodiment, adjacent conductive films 22 are formed.
The insulating property can be ensured by disposing the insulating film 24 therebetween (see FIGS. 5A and 5B).
As a result, it is possible to obtain a conductive film wiring which is obtained by a simple method, is less likely to cause defects such as disconnection and short circuit, and is miniaturized.

[Fourth Embodiment] In the fourth embodiment, an example of a conductive film wiring to which the present invention is applied will be described. FIG. 6D is a sectional view schematically showing the conductive film wiring according to the fourth embodiment of the present invention.
6A to 6C are cross-sectional views each schematically showing one manufacturing process of the conductive film wiring shown in FIG. 6D.

In this embodiment, the case where the conductive film 22 obtained by the wiring forming method of the first embodiment is formed on the multilayer wiring of the printed board 40 will be described. Further, the conductive film 22 can be formed by the wiring forming device according to the second embodiment.

On the printed circuit board 40, as shown in FIG. 6D, a plurality of wiring layers (conductive films 22) are provided in multiple layers on the base substrate 41 on which the conductive layer 42 is formed (FIG. 6D). 6 layers) are laminated. The conductive film 22 is laminated in multiple layers on the base substrate 41. An insulating film 24 is arranged between the conductive films 22 adjacent to each other in the X direction.
As a material of the insulating film 24 used in the present embodiment, a polyimide resin can be exemplified.

In order to manufacture this printed circuit board 40, as shown in FIGS. 6 (a) to 6 (c), droplet discharge is carried out by the same method as the wiring forming method of the first embodiment. The first and second droplets 22a and 24a are ejected at predetermined positions by a method to stack layers one by one to form a plurality of wiring layers. After laminating a predetermined layer, the dispersion medium and the solvent contained in the droplets are removed to obtain the first and second droplets 2.
The film forming components contained in 2a and 24a are solidified. For the solidification, the method described in the section of the first embodiment can be used. Through the above steps, the printed circuit board 40 shown in FIG. 6D is obtained.

In the present embodiment, the case has been described in which all the wiring layers to be formed are removed and then the solvent or the like is removed to solidify the respective layers. However, the wiring layer including the conductive film 22 and the insulating film 24 is formed. The film-forming components may be solidified by removing the solvent or the like every time one layer or several layers are formed.

According to this embodiment, it is possible to obtain a miniaturized multilayer wiring which is obtained by a simple method, is less likely to cause defects such as disconnection and short circuit.

[Fifth Embodiment] In the fifth embodiment, an example of a mounting structure of a semiconductor device to which the present invention is applied will be described. FIG. 7 is a sectional view schematically showing a CPU mounting board 50 according to a fifth embodiment, which is an example of a semiconductor device mounting structure to which the present invention is applied.

CPU mounting board 5 according to the fifth embodiment
As shown in FIG. 7, 0 has a printed circuit board 40 according to the fourth embodiment. A CPU 58 is mounted above the printed circuit board 40. This CPU 58
The printed circuit board 40 is electrically connected via the ball bumps 53. A cushioning material 56 is arranged on the CPU 58. This cushioning material 56 also functions as a heat dissipation material,
A cover 58 is provided on the CPU 58 via the cushioning material 56.
Are arranged.

According to the present embodiment, it is possible to obtain a miniaturized CPU mounting board which is obtained by a simple method, is less likely to cause defects such as disconnection and short circuit.

[Sixth Embodiment] As a sixth embodiment, a conductive film wiring forming method which is an example of the film pattern forming method of the present invention will be described. FIG. 8A is a sectional view schematically showing a film pattern forming method according to a sixth embodiment of the present invention. FIG. 8B is a sectional view schematically showing a film pattern formed by the film pattern forming method according to the sixth embodiment. Figure 8 (c)
[FIG. 10] is a plan view schematically showing a film pattern formed by the film pattern forming method according to the sixth embodiment. Note that FIG. 8B corresponds to a cross section taken along line E-E of FIG.

In the present embodiment, a case will be described in which a plurality of film patterns are formed so as to be adjacent to each other in the direction perpendicular to the substrate by superimposing a plurality of liquid droplets at substantially the same position and discharging them. Specifically, the liquid material containing the conductive fine particles (first droplets 62a) and the liquid material containing the insulator (second droplets 64a) are superposed and ejected at substantially the same position. After that, the solvent or the like is removed to solidify the film-forming components so that the conductive film 62 and the insulating film 64 are adjacent to the substrate 10 in the vertical direction (Z direction shown in FIGS. 8B and 8C). To form. Furthermore, in the present embodiment,
The conductive film 62 is formed so as to be covered with the insulating film 64. Further, the plurality of patterns (the conductive film 62 and the insulating film 64) formed at the adjacent positions have different functions.

First droplet 62a and second droplet 64a
Can be made of the same material as that of the first droplet 22a and the second droplet 24a used in the wiring forming method of the first embodiment.

Further, the boiling point of the liquid material forming the first droplet 62a can be made lower than that of the liquid material forming the second droplet 64a. In the present embodiment, since the second droplet 64a is formed above the first droplet 62a, as the liquid substance forming the first droplet 62a,
By using a material having a lower boiling point than the liquid material forming the second droplet 64a, the liquid material forming the first droplet 62a can be more easily removed.

The wiring forming method according to the present embodiment mainly includes
It includes a discharging step of the first and second droplets 62a and 64a and a solidifying step. Of these, the solidification step is the first
Since it is the same as the wiring forming method of the first embodiment, in the present embodiment, the first and second droplets 62a, 64 are formed.
Only the ejection step of a will be described.

In the present embodiment, as shown in FIG. 8A, a liquid substance (first droplets 62) containing conductive fine particles is used.
An inkjet head 72 is used in which a nozzle 11a for ejecting a) and a nozzle 11b for ejecting a liquid substance (second droplet 64a) containing an insulator are installed adjacent to each other. While moving the inkjet head 72 in the Y direction shown in FIG. 8A, the first droplet 62a and the second droplet 6 are formed.
By discharging 4a and 4a at almost the same position,
These droplets are landed toward the substrate 10 (in the −Z direction shown in FIGS. 8B and 8C). More specifically, it is preferable that the second droplet 64a is landed so as to overlap the first droplet 62a immediately after landing the first droplet 62a. First droplet 62a and second droplet 64a
Are composed of substances that do not mix with each other, so that these droplets remain separated from each other. By the above process,
The first droplet 62a and the second droplet 64a are formed so as to be adjacent to the substrate 10 in the vertical direction (Z direction in FIGS. 8B and 8C), and are parallel to the substrate 10. A pattern extending in (Y direction in FIGS. 8B and 8C) is formed. Then, the solidifying step is performed by the same method as the method for forming the wiring according to the first embodiment. Through the above steps, FIG. 8B and FIG.
As shown in (c), a plurality of film patterns (conductive film 62 and insulating film 64) are formed at adjacent positions.

According to the wiring forming method of the present embodiment, a plurality of film patterns can be formed at positions adjacent to the substrate 10 in the vertical direction. In particular, in this embodiment, a plurality of film patterns are formed of the conductive film 62 and the insulating film 64, and the conductive film 62 covered with the insulating film 64 can be formed by a droplet discharge method. Thus, the conductive film wiring protected by the insulating film can be formed by a simple method.

[Seventh Embodiment] In the seventh embodiment, an example of a non-contact type card medium to which the present invention is applied will be described. FIG. 9 is an exploded perspective view schematically showing the non-contact type card medium 400 according to the present embodiment.

(Structure of Device) As shown in FIG. 9, a non-contact type card medium 400 according to the present embodiment has a semiconductor integrated circuit chip 408 and an antenna circuit 412 in a housing composed of a card base 402 and a card cover 418. Is built in, and at least one of power supply and data transfer is performed by an electromagnetic wave or at least one of capacitive coupling with an external transceiver (not shown).

In this embodiment, a part of the antenna circuit 412 (region I shown in FIG. 9) is formed by using the wiring forming apparatus according to the second embodiment (FIG. 8). (See reference).
That is, the region I of the antenna circuit 412 includes the conductive film 62 and the insulating film 64 formed so as to cover the conductive film 62. The insulating film 64 is not formed on the conductive film 62 except for the region I in the antenna circuit 412. The insulating film 64 is formed in at least a region of the antenna circuit 412 where wiring is formed.

The terminals 66 and 68 are electrically connected to each other via the wiring 65. A part of the wiring 65 is formed on the insulating film 64. That is, the wiring 65 and the conductive film 62 are insulated by the insulating film 64. According to this configuration, a part of the antenna circuit 412 is formed by the wiring forming method of the sixth embodiment, so that at least the upper layer can be formed without a step of separately forming the insulating layer on the conductive film 62. The insulating film (insulating film 64) can be formed at a position where insulation between the wiring (wiring 65) and the underlying wiring (conductive film 62) is desired to be secured.

(Device Manufacturing Method) Next, referring to FIGS. 10 and 11, the non-contact type card medium 4 according to the present embodiment.
An example of the manufacturing method of 00 is shown. FIG. 10A and FIG.
1A is a plan view schematically showing one manufacturing process of the non-contact type card medium shown in FIG. In addition, FIG.
(B) and FIG. 11 (b) are cross-sectional views schematically showing cross sections taken along line JJ of FIG. 10 (a) and FIG.

First, as shown in FIGS. 10A and 10B, the conductive film 62 that constitutes the antenna circuit 412.
Are formed by the wiring forming apparatus of the second embodiment. Here, a part (area I) of the antenna circuit 412 is
It is formed by using the same method as the wiring forming method of the sixth embodiment. Thus, the insulating film 64 is formed so as to cover the conductive film 62 in the region I of the antenna circuit 412. In the antenna circuit 412, the insulating film 64 is not formed on the conductive film 62 except the region I.

Next, FIG. 11A and FIG. 11B
As shown in FIG. 5, the wiring 65 that electrically connects the terminals 66 and 68 is formed. Here, a part of the wiring 65 is a part of the conductive film 6.
2 is formed over the insulating film 64. The non-contact type card medium 400 is obtained by the above steps.

Non-contact type card medium 400 of the present embodiment
According to this, it is possible to provide a non-contact type card medium that is less likely to cause a failure such as a disconnection or a short circuit of the antenna circuit 412 and can be made smaller and thinner.

[Eighth Embodiment] In the eighth embodiment, an example of a conductive film wiring to which the present invention is applied will be described.

FIG. 12 is a plan view schematically showing conductive film wiring according to the eighth embodiment of the present invention. In FIG. 12, the insulating film 64 formed between the wirings
Illustration (see FIG. 13C) is omitted. FIG.
13A to 13C are cross-sectional views each schematically showing one manufacturing process of the conductive film wiring shown in FIG. 12, and each corresponds to a cross section taken along line FF of FIG.

In this embodiment, the case where the conductive film 62 and the insulating film 64 obtained by the wiring forming method of the sixth embodiment are applied to the rearrangement wiring of the semiconductor IC chip 80 will be described.

As shown in FIG. 12, the semiconductor IC chip 80 is provided with terminals 82 formed near the outer edge and repositioning terminals 84 formed inside the terminals 82. The terminal 82 and the rearrangement terminal 84 are electrically connected by a wiring (conductive film wiring) 62.
That is, the conductive film 62 functions as a rearrangement wiring.

Next, a method of manufacturing the semiconductor IC chip 80 will be described with reference to FIGS. 13 (a) to 13 (c).

First, as shown in FIG. 13A, the substrate 8
After a terminal (pad) 82 made of a metal layer such as aluminum or gold is formed at a predetermined position of 1, an insulating layer 83 made of a polyimide resin is formed on the entire surface. Then
An opening 85 is formed in the insulating layer 83 at a position corresponding to the upper portion of the terminal 82.

Then, as shown in FIG. 13B, the sixth
The first droplet 62a and the second droplet 64a are ejected by the same method as the wiring forming method of the above embodiment. In this step, the second droplet 64a is not ejected to the position where the rearrangement terminal 84 will be formed later. As a result, the opening 87 is formed in the second droplet 64a. Next, the solvent or the like of these droplets is removed to solidify the film-forming components, and the conductive film 62
And the insulating film 64 is formed.

Next, as shown in FIG. 13C, a ball bump is formed in the opening 87. The ball bump functions as the rearrangement terminal 84 by connecting to the conductive film 62 exposed on the bottom surface of the opening 87. Through the above steps, the semiconductor IC chip 80 shown in FIG. 12 is obtained.

According to the present embodiment, the opening 87 is provided in the insulating film 64 by not ejecting the second droplet 64a only at the place where the rearrangement terminal 84 is to be formed. Thereby, the rearrangement terminal 84 can be directly formed on the conductive film 62. As a result, it is possible to obtain a conductive film wiring which is obtained by a simple method, is less likely to cause defects such as disconnection and short circuit, and is miniaturized.

[Ninth Embodiment] As a ninth embodiment, a conductive film wiring forming method which is an example of the film pattern forming method of the present invention will be described. FIG. 14 is a sectional view schematically showing a film pattern forming method according to a ninth embodiment of the present invention. FIG. 15 is a diagram for explaining one forming step of the film pattern forming method according to the ninth embodiment.

In the present embodiment, a plurality of droplets are
By discharging into the concave portion 96 provided in the substrate 91,
A case where a plurality of film patterns (conductive film 62 and insulating film 64) are formed in the recess 96 will be described. Here, the plurality of film patterns (the conductive film 62 and the insulating film 64) can be formed so as to be adjacent to the substrate 91 in the vertical direction (Z direction shown in FIG. 14).

The wiring forming method according to the present embodiment is the same as the wiring forming method according to the sixth embodiment except that a plurality of droplets are ejected into the recess 96. In the present embodiment, specifically, the liquid material containing the conductive fine particles (first droplets 62a) and the liquid material containing the insulator (second droplets 64a) are superposed at substantially the same position. And discharges into the recess 96. After that, the solvent is removed to solidify the film forming components, and the conductive film 62 and the insulating film 64 are formed in the recess 96 so as to be adjacent to the substrate 10 in the vertical direction (Z direction shown in FIG. 14). .

First droplet 62a and second droplet 64a
For each of them, the same material as that used in the wiring forming method of the sixth embodiment can be used. in this case,
The specific gravity of the first droplet 62a is preferably larger than the specific gravity of the second droplet 64a.

First droplet 62a and second droplet 64a
After being discharged into the recess 96, for example, as shown in FIG.
If necessary, the substrate 91 is subjected to a centrifugal separator to apply a centrifugal force, so that the separation of the first droplet 62a and the second droplet 64a can be promoted. According to this method, the first droplet 62a and the second droplet 64a can be easily separated, and the film quality can be made uniform in a short time.

According to the wiring forming method of the present embodiment, the same action and effect as those of the wiring forming method of the sixth embodiment can be obtained.

[Tenth Embodiment] In the tenth embodiment, an example of a mounting structure of a semiconductor device to which the present invention is applied will be described.

(Device Structure) FIG. 16A is a sectional view schematically showing an IC chip laminated body 70 according to the tenth embodiment which is an example of the mounting structure of the semiconductor device to which the present invention is applied. , FIG. 16B shows a region G of FIG.
It is an enlarged schematic diagram of a part.

The IC chip laminate 70 according to the tenth embodiment is formed by laminating a plurality of IC chips 70a as shown in FIG. 16 (a). Although FIG. 16A shows a case where four IC chips 70a are stacked, the number of stacked IC chips 70a in the IC chip stacked body 70 is not limited to this.

An electronic circuit (not shown) is formed on the surface of each IC chip 70a. I adjoining vertically
The C chip 70a is electrically connected by the contact portion 76. FIG. 16B shows this contact portion 76.
It is an enlarged schematic diagram of the vicinity. IC chips 7 vertically adjacent to each other
0a are electrically connected to each other via a contact portion 76.

The contact portion 76 includes a conductive film 62 and an insulating film 64. The conductive film 62 and the insulating film 64 are formed in a recess (opening 75) provided in the substrate 71. A conductive layer 77 is provided on the side surface of the opening 75. The conductive layer 77 is formed on the conductive film 62 below the opening 75.
And is connected to the wiring layer 73 near the upper portion of the opening 75. Therefore, the conductive film 62 is electrically connected to the wiring layer 73 via the conductive layer 77.

Further, the contact portions 76 of the adjacent IC chips 70a are electrically connected to each other via the pad 78. That is, the conductive layer 77 and / or the wiring layer 73 of the lower IC chip 70a is connected to the pad 78, and the pad 78 is connected to the conductive layer 77 and / or the wiring layer 73 of the upper IC chip 70a. The lower IC chip 70a and the upper IC chip 70a
And are electrically connected.

(Device Manufacturing Method) Next, an example of a method for manufacturing the IC chip laminate 70 according to the present embodiment will be described. 17A to 17D are respectively shown in FIG.
It is sectional drawing which shows one manufacturing process in the manufacturing method of the IC chip laminated body 70 shown to (a).

First, as shown in FIG. 17A, the pad 78 and the adhesive 7 are formed on the surface of the substrate 71 of the lower IC chip 70a among the plurality of IC chips 70a to be stacked.
9 is formed. The pad 78 is formed by plating or a droplet discharge method.

A recess (opening 75) is formed in the upper IC chip 70a. Then, a conductive layer 73 made of, for example, gold or copper is formed on the side surface of the opening 75, and a wiring layer 77 connected to the conductive layer 73 is further formed. If necessary, before forming the conductive layer 73,
Refractory metal layer and / or refractory metal layer nitride layer,
For example, a barrier layer made of Ta, TaN, Ti, TiN can be formed. In this step, the order of forming the wiring layer 77 and the conductive layer 73 is not particularly limited.

Next, as shown in FIG. 17B, the lower layer IC chip 70a and the upper layer IC chip 70a are bonded together. Here, the adhesive 79 maintains the physical connection. Depending on the degree of mechanical strength required for the adhesive 79, the lower layer IC chip 70a and the upper layer IC chip 70a can be connected without using the adhesive 79. Next, by using the same method as the wiring forming method according to the ninth embodiment, a liquid material containing conductive fine particles (first liquid droplets 62a) and a liquid material containing an insulator are formed by a droplet discharge method. The (second droplet 64a) and the second droplet 64a are superposed at substantially the same position and are ejected to the opening 75. After that, the solvent and the like are removed to solidify the film forming component, and as shown in FIG. 17C, the conductive film 62 and the insulating film 64 are formed in the opening 75 so as to be vertically adjacent to the substrate 71. To be done. Also, after this step,
The above-mentioned centrifugation step can be performed if necessary. Through the above steps, the contact portion 76 is formed.

Next, as shown in FIG. 17D, after forming the pads 78 on the substrate 71 of the upper IC chip 70a, another IC chip 70a is further laminated on the upper layer,
Similarly, the contact portion 76 is formed. Through the above steps, the IC chip laminated body 70 shown in FIGS. 16A and 16B is obtained.

According to the present embodiment, it is possible to obtain an IC chip laminated body which is obtained by a simple method, is less likely to cause defects such as disconnection and short circuit, and is miniaturized.

[Eleventh Embodiment] As an eleventh embodiment, an example of the film pattern forming method of the present invention will be described. 18A to 18D are cross-sectional views schematically showing droplets formed by the film pattern forming method according to the eleventh embodiment of the present invention.

In this embodiment, the first droplet 11
In the case where the second droplet 114a and the second droplet 114a have a property that they do not mix with each other, the state of the interface between the droplets is obtained by superimposing these droplets at substantially the same position without performing the solidification process. An example in which a film pattern is formed by performing a solidification step after maintaining the above will be described.
18A to 18D, the case where the specific gravity of the first droplet 112a is larger than the specific gravity of the second droplet 114a will be described.

In FIG. 18A, the first droplet 11
Since the specific gravity of 2a is larger than that of the second droplet 114a, these droplets are separated into layers, and as a result, the second droplet 114 is separated.
a is arranged in a layer above the first droplet 112a. In this case, the first droplet 112a and the second droplet 1
The order of discharging 14a is not particularly limited, and the one having the higher specific gravity is arranged in the lower layer.

In FIG. 18B, the first droplet 11
2a has a specific gravity larger than that of the second droplet 114a,
In addition, the ejection amount of the second droplet 114a is equal to that of the first droplet 112.
The second droplet 114a
Are formed so as to cover the first droplet 112a.

In FIG. 18C, the first droplet 11
2a and the second droplet 114a are formed in the recess 116. Even in this case, the specific gravity of the first droplet 112a is larger than that of the second droplet 114a. Further, in this example, the bottom surface 116a of the recessed portion 116 provided in the insulating layer 118 is subjected to a treatment having liquid repellency with respect to the first droplet 112a. Therefore, the first droplet 112
Since a has a larger specific gravity than the second droplet 114a, it tends to move toward the bottom surface 116a of the recess 116, but the bottom surface 116a is not treated to be liquid repellent to the first droplet 112a. Since it has been applied, a part of the second droplet 114a remains on the bottom surface 116a. In addition, the bottom surface 11 of the recess 116
The same effect can be obtained by subjecting the liquid droplets 114a to the liquid droplets 6a. As a result, as shown in FIG. 18C, the first droplet 112a is sandwiched by the second droplets 114a, and a so-called sandwich structure is formed.

For example, in the structure of FIG. 18C, a liquid material containing an insulator can be used as the first droplet 112a, and a liquid material containing conductive fine particles can be used as the second droplet 114a. In this case, the film pattern finally obtained after the solidifying step is performed if necessary is composed of two conductive films 114 and an insulating film 112 sandwiched by the conductive films 114. In this case, this film pattern can function as a capacitor, for example.

In this way, after the two layers are separated into the desired film structure, the solvent (dispersion medium) is removed by a method such as natural standing, heating, and pressure reduction to solidify the film-forming components. A target film pattern is formed.

In the present embodiment, the mode of separation is not limited to that described above, and by controlling the specific gravity of the liquid droplets used, the amount of liquid droplets, and the lyophilicity and liquid repellency of the liquid droplets on the bottom surface, The mode of droplet separation can be controlled arbitrarily. Further, the substrate or the entire system can be cooled in order to prevent evaporation of the liquid component contained in the previously ejected droplets. Further, in the above-mentioned example, the case where the number of types of liquid droplets is two is shown, but the types of liquid droplets are not limited to this, and three or more types may be used. When three types of liquid droplets are used, for example, the solvent (or dispersion medium) used for each liquid droplet is a non-polar organic liquid having a high specific gravity, an aqueous liquid having a medium specific gravity, or a non-polar organic liquid having a low specific gravity. By using a liquid, the three layers obtained by ejecting these droplets can be separated.

Further, according to the method for forming a film pattern of the present embodiment, since the interface of the film forming the obtained film pattern can be formed without being exposed to the outside even once, the characteristics as a device are obtained. Can be significantly improved.

[Twelfth Embodiment] In the twelfth embodiment, a specific example of a semiconductor device to which the present invention is applied will be described. 19A is a plan view schematically showing a thin film transistor (TFT) 120 according to this embodiment, which is an example of a semiconductor device, and FIG. 19B is a plan view thereof.
It is a figure which shows typically the cut surface in HH of TFT120 shown to (a).

The TFT 120 shown in FIG. 19A has the first
It is formed by applying the film pattern forming method of the first embodiment. In this TFT 120, a gate electrode 122 made of, for example, silver is formed on a substrate 121. An insulating layer 124 made of, for example, silicon oxide is formed on the gate electrode 122. This insulating layer 124 is
Gate electrode 122 and source / drain regions 126, 12
It is installed to insulate 7 and. Further, a channel region 125 made of, for example, amorphous silicon is formed so as to cover the insulating layer 124. Source / drain regions 126 and 127 made of, for example, doped silicon are formed on the channel region 125. Further, the source / drain regions 126 and 127
Source / drain electrodes 128 and 129 are formed on the above.

In the present embodiment, the gate electrode 12
2, the source / drain electrodes 128 and 129, the channel region 125, the source / drain regions 126 and 127, and the insulating layer 124 are all formed by the film pattern forming method of the eleventh embodiment.

In the present embodiment, each layer can be formed by solidifying the film-forming components by evaporating and removing the liquid material contained in each of these layers. Therefore, the interface between the layers can be formed without exposing to the atmosphere. Thereby, the interface between the layers can be formed in a good state. As a result, the function of each layer can be enhanced.

Next, an experimental example of the method for manufacturing the TFT 120 will be described with reference to FIGS. 20 (a) to 20 (e). Note that this manufacturing method is an example, and the electrode, the insulating layer, and the like can be formed using a material other than the materials shown here. 20 (a) to 20 (e), the drawings on the left side are plan views schematically showing one manufacturing process of the TFT 120 of the present embodiment, and correspond to the plan view of FIG. 19 (a). It shows the part to do. Also, FIG.
In FIG. 20 (e), the diagram on the right side is a diagram showing a cross section of the diagram on the left side, and shows a cross section corresponding to the sectional view of FIG. 19 (b).

First, the quartz substrate 121 and 0.1 g of hexafluoro-1,1,2,2-tetrahydrodecyltriethoxysilane were placed in a closed container having a volume of 10 liters and kept at 120 ° C. for 2 hours. As a result, the substrate 12
The entire surface of No. 1 was made liquid repellent. Next, mask UV irradiation was performed to form a lyophilic pattern (not shown) having a width of 10 μm to form a gate electrode. Then, 5 p of an aqueous dispersion liquid in which silver particles having a diameter of 10 nm are dispersed at a ratio of 10 wt% is formed on the lyophilic pattern by a droplet discharge method.
20 μm each was discharged at intervals of 30 μm to form a coating film 122a having a width of 10 μm and a length of 1 mm as shown in FIG.

Then, while the coating film 122a is not dried, a 25 wt% xylene solution of polysilazane is directed from another ink jet head toward the same place as the region where the coating film 122a is formed, and 10 μl of 30 μm each.
The coating film 124a was formed by discharging at intervals of. By this step, as shown in FIG. 20B, the coating film 122a is formed.
And the coating film 124a landed on the coating film 122a cause layer separation, and the coating film 124a becomes the coating film 122a.
Was fixed on the substrate 121 so as to completely cover the substrate. At this time, in order to delay the drying of the previously-applied coating film 122a, element formation was performed while maintaining the entire system at 10 ° C. However, depending on the solvent used, the entire system may be placed in a solvent atmosphere to remove the solvent ( A method of suppressing the evaporation of the dispersion medium) can be adopted. In this step, part of the coating film 122a was exposed for wiring connection (see FIG. 20B).

Next, this substrate was held at 80 ° C. for 30 minutes while reducing the pressure to 20 torr to completely remove water in the coating film 122a and xylene in the coating film 124a, and then 350 ° C. in atmospheric pressure. Heated for 10 minutes. Thus, as shown in FIG. 20C, the gate electrode 122 made of silver and the insulating layer 124 made of silicon oxide were formed. As a result of the measurement, the thickness of the insulating layer 124 is 60 to 8
It was 0 nm.

Then, a film thickness of 1 is formed by the plasma CVD method.
After a 50 nm amorphous silicon film (not shown) is formed on the entire surface, a photolithography process is performed, as shown in FIG.
As shown in (d), the channel region 1 is 500 μm square.
25 was formed.

Next, 12 wt% of cyclopentasilane
%, And 1 wt% of yellow phosphorus were mixed and dissolved in 20 ml of a toluene solution, which was irradiated with UV having a wavelength of 254 nm for 15 minutes and then filtered to obtain a solution, which was then deposited on the channel region 125 by a droplet discharge method. It was discharged. Here, the solution was discharged so that a gap 125a of 10 μm was formed in a portion located immediately above the gate electrode 122 (see FIG. 20 (e)). Then, the entire substrate 121 was baked at 400 ° C. to form the source / drain regions 126 and 127 made of doped silicon as shown in FIG.

Next, using the same silver dispersion liquid as that used for forming the gate electrode 122, the source / drain electrode 128 is brought into contact with the source / drain regions 126 and 127 by a droplet discharge method. , 129 was formed. Through the above steps, FIG. 19A and FIG.
As shown in (b), a TFT 120 was obtained.

As a result of measuring the voltage-current characteristics of the TFT 120 obtained by the above process, the mobility is 0.3 cm ² / V.
s transistor.

[Thirteenth Embodiment] In the thirteenth embodiment, specific examples of electronic equipment to which the present invention is applied will be described. FIG. 21 shows a first example of the liquid crystal device according to the present embodiment.
It is a figure which shows the plane layout of a signal electrode etc. on a board | substrate.
The liquid crystal device according to the present embodiment is configured such that the first substrate, a second substrate (not shown) provided with scanning electrodes and the like, and liquid crystal enclosed between the first substrate and the second substrate (see FIG. (Not shown).

As shown in FIG. 21, in the pixel region 303 on the first substrate 300, a plurality of signal electrodes 310 ... Are provided in a multiple matrix form. In particular, each signal electrode 310 ...
Is a plurality of pixel electrode portions 3 provided corresponding to each pixel.
10a ... And signal wiring portions 310b ... Which connect these in a multi-matrix form, and extend in the Y direction.

Further, reference numeral 350 is a liquid crystal drive circuit having a one-chip structure, and the liquid crystal drive circuit 350 and the signal wiring portion 31.
0b ... One end side (lower side in the figure) is the first routing wiring 33.
1 ... are connected.

Numerals 340 ... Are vertical conduction terminals, and these vertical conduction terminals 340 ... Are connected to terminals provided on the second substrate (not shown) by vertical conduction members 341. Further, the vertical conduction terminals 340 ... And the liquid crystal drive circuit 3
50 is connected via the second lead wiring 332 ...

In the liquid crystal device of this embodiment, the pixel electrode portions 310a ... Are composed of the thin film transistor 120 according to the twelfth embodiment.

According to the liquid crystal device of the present embodiment, since the pixel electrode portion 310a is formed of the thin film transistor 120 according to the twelfth embodiment, the manufacturing is easy, the cost is low, and the high speed and stable driving is possible. The liquid crystal device can be provided and can be downsized and thinned.

[Fourteenth Embodiment] In the fourteenth embodiment, a specific example of a light emitting device to which the present invention is applied will be described. FIG. 22 is a cross-sectional view schematically showing the light emitting device 140 according to this embodiment, which is an example of the semiconductor device.

The light emitting device 140 shown in FIG. 22 is an organic EL device that emits light by electroluminescence (EL).
The device includes a substrate 141 and a light emitting element portion 140a formed on the substrate 140. The light emitting element section 140a is
Includes anode 143, cathode 145, hole transport / injection layer 142, and light emitting layer 144. An insulating layer 148 is formed on the anode 143, and the opening 1 is formed in the insulating layer 148.
46 is formed. The hole transport / injection layer 142 and the light emitting layer 144 are formed in the opening 146. Further, the hole transporting / injecting layer 142 and the light emitting layer 1
44 is arranged so as to be sandwiched by the anode 143 and the cathode 145.

The anode 143 and the cathode 145 form a pair of electrode layers. Anode 143 and cathode 145
By applying a voltage between and, holes are injected from the anode 143 through the hole transport / injection layer 142 and electrons are injected into the light emitting layer 144 from the cathode 145, respectively. here,
The holes and the electrons combine in the light emitting layer 144 to generate excitons, and light is generated when the excitons are deactivated.

According to the light emitting device of the present embodiment, the hole transport / injection layer 142 and the light emitting layer 144 can be formed by applying the film pattern forming method of the eleventh embodiment. In this case, the hole transport / injection layer 142 and the light emitting layer 144 are formed by the droplet discharge method.
A liquid substance containing the constituents of 2 (first droplet 142
It is formed through a step of continuously ejecting a) and a liquid material (second droplet 144a) containing a component forming the light emitting layer 144. That is, after the first droplet 142a and the second droplet 144a are discharged by the droplet discharging method, the solvent contained in these droplets can be evaporated and removed at the same time. Therefore, when the solvent is removed, the interface between the hole transport / injection layer 142 and the light emitting layer 144 is not exposed and is not exposed to the air. Therefore, the hole transport / injection layer 1
The state of the interface between 42 and the light emitting layer 144 can be kept very good. As a result, the interface between the hole transport / injection layer 142 and the light emitting layer 144 is formed uniformly, so that the mobility of charges at the interface can be secured. As a result, the characteristics of the obtained light emitting device can be significantly improved.

Next, an experimental example of a method for manufacturing the light emitting device 140 will be described with reference to FIGS. 23 (a) to 23 (c) and 24 (a) to 24 (c). In addition,
This manufacturing method is an example, and the electrode, the light emitting layer, and the like can be formed using a material other than the materials shown here.

(Experimental example) First, as shown in FIG. 23A, an anode 143 made of ITO was formed on a substrate 141. Then, as shown in FIG.
On top of the insulating layer 1 made of polyimide resin and having a thickness of 2 μm.
48 were formed. The insulating layer 148 has a diameter of 30 μm.
The openings 146 are formed at m and pitch of 40 μm. The opening 146 is provided to form the hole transport / injection layer 142 and the light emitting layer 144 in the process described later. Next, this substrate 141 is subjected to a continuous treatment of oxygen plasma and fluorocarbon plasma to lyophobicize the surface of the insulating layer 148 and expose the exposed surface of the anode 143 (as shown in FIG. 23C). The bottom surface 146a) of the opening 146 was made lyophilic. That is, in this step, as shown in FIG. 23C, only the surface of the insulating layer 148 is made liquid repellent. That is, in this step, the liquid repellent pattern 147 is formed on the surface of the insulating layer 148, and the bottom surface 146a of the opening 146 is formed.
A lyophilic pattern is formed on.

Then, PEPOT (polyethylene dioxythiophene) / PSS (polystyrene sulfonic acid)
(Baytron P-water dispersion): 8 wt%, water 81.5 w
t%, 5.5 wt% of methanol, 5 wt% of isopropyl alcohol, and 0.05 wt% of γ-glycidyloxypropytrimethoxysilane were mixed in the opening 14
By discharging 10 pl toward No. 6, a first droplet 142a was formed in the opening 146 as shown in FIG.

Next, before the first droplets 142a are evaporated, 2 wt% of PPV (polyparaphenylene vinylene) and 20 w of methanol are jetted by another ink jet head.
t%, 1,3-dimethyl-2-imidazolidinone 70w
A solution obtained by mixing t% and butyl carbitol acetate 8 wt% is discharged by 8 pl onto the first droplet 142a,
As shown in FIG. 24B, the second droplet 144a was formed on the first droplet 142a. This first droplet 142a
And the second droplet 144a were separated into layers.

Then, in vacuum (1 torr), 150 ° C.
For 4 hours, the first droplet 142a and the second droplet 142a
24C, the solvent is completely removed from the droplets 144a to solidify the film components, and as shown in FIG.
2 and the light emitting layer 144 were formed.

Then, a Ca layer 145a having a film thickness of 50 nm is formed on the hole transporting / injecting layer 142 by vacuum heating vapor deposition.
And an Al layer 145b having a film thickness of 200 nm were formed. Thereby, as shown in FIG. 22, the cathode 145 including the Ca layer 145a and the Al layer 145b was formed. Subsequently, sealing was performed with an acrylic resin (not shown) for protecting the electrodes. Through the above steps, the light emitting device 14 shown in FIG.
0 was obtained.

As a result of investigating the light emitting characteristics of the light emitting device 140 obtained by the above process, the driving voltage is 5 V and the brightness is 12V.
The emission lifetime (luminance half-life) was 0 cd / m ² and 3000 hours.

According to the above experimental example, a light emitting device having excellent light emitting characteristics could be obtained.

Further, according to the above experimental example, a lyophilic pattern is formed in a region (bottom surface 146a of the opening 146) where a plurality of film patterns (hole transporting / injecting layer 142 and light emitting layer 144) are desired to be formed, The liquid-repellent pattern 14 is formed on a region (surface of the insulating layer 148) where formation of a plurality of film patterns is not desired.
7 are formed, the first and second droplets 142a, 142a, 14a
4a is discharged. Thereby, the first and second droplets 1
42a and 144a can be formed in a desired area. As a result, a plurality of film patterns (hole transport / injection layer 1
42 and the light emitting layer 144) can be selectively formed in a desired region, so that a film pattern having a desired shape can be formed at a desired position.

Comparative Example On the other hand, as a comparative example, the solvent contained in the first droplet 142a is completely removed after the first droplet 142a is landed on the bottom surface 146a of the opening 146 to form the film forming component. After solidifying, the second droplet 144a was discharged to form a light emitting device. Specifically, the anode 143 is formed on the substrate 141 in the same manner as in Experimental Example 1 above.
And the first droplet 142 after forming the insulating layer 148.
a is landed on the bottom surface 146a of the opening 146. Then, in this comparative example, in vacuum (1 torr), 150 ° C.
The first droplet 142a is treated for 2 hours, the solvent contained in the first droplet 142a is removed, and the film-forming component is solidified.
The first droplet 142a is ejected onto the surface 44a, and then further treated in vacuum (1 torr) at 150 ° C. for 2 hours to remove the solvent contained in the second droplet 144a to form a film forming component. Solidified. In the subsequent steps, a light emitting device (not shown) was prepared in the same manner as in Experimental Example 1 above. As a result, the driving voltage was 8 V, the luminance was 85 cd / m ² , and the light emission life (luminance half time) was 2000 hours. That is, the light emitting device of the comparative example had a low luminance and a short light emitting life even when a driving voltage higher than that of the light emitting device of the experimental example was applied.

From the above results, in the light emitting device of the above-described embodiment, the solvent contained in the first and second droplets 142a and 144a was removed at the same time to solidify the film-forming component, so that the hole transporting / Injection layer 142 and light emitting layer 144
The hole transport / injection layer 142 without exposing the interface with
And the light emitting layer 144 was formed. Therefore, the interface between the hole transport / injection layer 142 and the light emitting layer 144 is in a good state, and the mobility of charges at the interface is good. As a result, the characteristics of the obtained light emitting device could be significantly improved.

[Fifteenth Embodiment] In the thirteenth embodiment, specific examples of electronic equipment to which the present invention is applied will be described. The electronic device according to this embodiment includes a display unit (described later) including the liquid crystal device according to the thirteenth embodiment or the light emitting device according to the fourteenth embodiment.

FIG. 25A is a perspective view showing an example of a mobile phone. In FIG. 25A, reference numeral 600 denotes a mobile phone main body, and 601 denotes a display unit including the liquid crystal device according to the thirteenth embodiment or the light emitting device according to the fourteenth embodiment.

FIG. 25B is a perspective view showing an example of a portable information processing device such as a word processor and a personal computer. In FIG. 25B, 700 is an information processing apparatus, 701 is an input unit such as a keyboard, 703 is an information processing apparatus main body,
702 is a liquid crystal device or a first liquid crystal device according to the thirteenth embodiment.
4 illustrates a display unit including the light emitting device according to the fourth embodiment.

FIG. 25C is a perspective view showing an example of a wrist watch type electronic device. In FIG. 25 (c), 800
Indicates a watch body, and 801 indicates a display unit including the liquid crystal device according to the thirteenth embodiment or the light emitting device according to the fourteenth embodiment.

Since the electronic equipment shown in FIGS. 25 (a) to 25 (c) is equipped with the liquid crystal device or the light emitting device of the above-mentioned embodiment, high speed and stable driving is possible,
In addition, downsizing and thinning can be achieved.

In addition to the above-mentioned electronic devices of this embodiment, a car navigation device, a pager, an electronic notebook, a calculator, a workstation, a videophone, a POS terminal, an IC card, a mini disk player,
A device equipped with a touch panel can be exemplified. Needless to say, the above-described display unit can be applied as the display unit of these various electronic devices.

The present invention is not limited to the above-described embodiment, but various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations having the same function, method and result, or configurations having the same object and result). Further, the invention includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. Further, the present invention includes a configuration having the same effects as the configurations described in the embodiments or a configuration capable of achieving the same object. Further, the invention includes configurations in which known techniques are added to the configurations described in the embodiments.

[Brief description of drawings]

FIG. 1 is a cross-sectional view schematically showing a film pattern forming method according to a first embodiment of the present invention.

FIG. 2 is a plan view schematically showing a film pattern formed by the film pattern forming method according to the first embodiment.

FIG. 3 is a perspective view schematically showing a film pattern forming apparatus according to a second embodiment of the present invention.

FIG. 4 is a plan view schematically showing conductive film wiring according to a third embodiment of the present invention.

5 (a) is an enlarged schematic view of a region B shown in FIG. 4, and FIG. 5 (b) is a view schematically showing a cross section taken along line C-C of FIG. 5 (a). Is.

6A to 6D are cross-sectional views each schematically showing one manufacturing process of a conductive film wiring according to a fourth embodiment of the present invention.

FIG. 7 is a sectional view schematically showing a mounting structure of a semiconductor device according to a fifth embodiment of the present invention.

8 (a) and 8 (b) are views for explaining a film pattern forming method according to a sixth embodiment to which the present invention is applied, and FIG. It is a top view which shows typically the film pattern formed by the film pattern forming method which concerns on 6th Embodiment.

FIG. 9 is an exploded perspective view schematically showing a non-contact type card medium according to a seventh embodiment of the present invention.

10 (a) is a plan view schematically showing one manufacturing process of the non-contact type card medium shown in FIG.
(B) is a figure which shows typically the cross section in JJ of Fig.10 (a).

11 (a) is a plan view schematically showing one manufacturing process of the non-contact type card medium shown in FIG.
11B is a diagram schematically showing a cross section taken along line JJ of FIG.

FIG. 12 is a plan view schematically showing a conductive film wiring according to an eighth embodiment of the present invention.

13 (a) to 13 (c) are cross-sectional views each schematically showing one manufacturing process of the conductive film wiring shown in FIG.

FIG. 14 is a sectional view schematically showing a film pattern forming method according to a ninth embodiment of the invention.

FIG. 15 is a diagram illustrating a forming step of a film pattern forming method according to a ninth embodiment of the present invention.

16A is a sectional view schematically showing a mounting structure of a semiconductor device according to a tenth embodiment to which the invention is applied, and FIG. 16B is a sectional view of FIG. ) Area G
FIG.

17 (a) to 17 (d) are cross-sectional views each schematically showing one manufacturing step of the mounting structure of the semiconductor device shown in FIG.

18 (a) to 18 (d) are cross-sectional views schematically showing droplets formed by a film pattern forming method according to an eleventh embodiment of the present invention. is there.

19 (a) is a plan view schematically showing a thin film transistor according to a twelfth embodiment which is an example of a semiconductor device to which the present invention is applied, and FIG.
It is a figure which shows the cross section in HH of 9 (a) typically.

20 (a) to 20 (e) are respectively a plan view and a cross-sectional view schematically showing one manufacturing process of the thin film transistor shown in FIG.

FIG. 21 is a plan view schematically showing a first substrate of a liquid crystal device according to a thirteenth embodiment which is an example of the electro-optical device to which the invention is applied.

FIG. 22 is a fourteenth example of a light emitting device to which the present invention is applied.
3 is a cross-sectional view schematically showing the light emitting device according to the embodiment of FIG.

23 (a) to 23 (c) are cross-sectional views each schematically showing one manufacturing process of the light emitting device shown in FIG.

24A to 24C are cross-sectional views each schematically showing one manufacturing process of the light emitting device shown in FIG.

25 (a) is a diagram showing a mobile phone according to a fifteenth embodiment, which is an example of an electronic device to which the present invention is applied, and FIG. 25 (b) is an electronic device to which the present invention is applied. It is a figure which shows the portable information processing apparatus which concerns on 15th Embodiment which is an example of apparatus, FIG.25 (c) is the wristwatch type which concerns on 15th Embodiment which is an example of the electronic equipment to which this invention is applied. It is a figure which shows an electronic device.

FIG. 26 is a flowchart illustrating a film pattern forming method according to the first embodiment.

FIG. 27 is a flowchart illustrating a general method for forming a film pattern.

[Explanation of symbols]

1 Inkjet head group 2 X direction guide shaft 3 X-direction drive motor 4 table 5 Y direction guide shaft 6,16 Y direction drive motor 7 base 8 control device 10 substrates 11, 11a, 11b nozzles 12 inkjet head 14 Cleaning mechanism 15 heater 18a, 18b ink tank 22 Conductive film 22a First droplet 24 Insulating film 24a second droplet 30 Semiconductor IC chip 31 substrate 32 rearranged terminals 34 terminals 40 printed circuit board 41 base substrate 42 conductive layer 50 CPU board 52,53 ball bump 54 cover 56 cushioning material 58 CPU 62 conductive film 62a First droplet 64 insulating film 64a second droplet 65 wiring 66, 68 terminal 70 IC chip stack 70a IC chip 71 board 72 heads 73 Conductive layer 74 ball bump 75 opening 76 Contact part 77 wiring layer 78 pads 79 Adhesive 80 Semiconductor IC chip 81 substrate 82 terminal 83 Insulation layer 84 Rearrangement terminal 85,87 opening 89 Reinforcement material 91 substrate 96 recess 100 wiring forming equipment 112 conductive film 112a first droplet 114 insulating film 114a second droplet 116 recess 118 insulating layer 120 thin film transistor (TFT) 121 substrate 122 gate electrode 122a coating film 124 insulating layer 124a coating film 125 channel region 125a gap 126, 127 source / drain regions 128,129 source / drain electrodes 140 light emitting device 140a light emitting element section 141 substrate 142 Hole Transport / Injection Layer 142a First droplet 143 Anode 144 light emitting layer 144a second droplet 145 cathode 146 opening 146a Bottom of opening (lyophilic pattern) 147 liquid repellent pattern 148 insulating layer 149 power supply 300 First substrate 303 pixel area 310 signal electrode 310a Pixel electrode part 310b Signal wiring part 331 First routing wiring 332 Second wiring 340 Vertical conduction terminal 341 Vertical conduction material 350 LCD drive circuit 400 Non-contact card medium 402 card base 408 Semiconductor integrated circuit chip 412 Antenna circuit 418 card cover 600 mobile phone body 601 display 700 information processing device 701 input section 702 display 703 Information processing device body 800 watch body 801 display

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 29/78 627C 617V (72) Inventor Takashi Aoki 3-3-5 Yamato, Suwa-shi, Nagano Seiko Epson shares companies in the F-term (reference) 4M104 AA01 BB01 BB02 BB04 BB05 BB07 BB08 BB09 BB36 CC01 CC05 DD20 DD51 DD78 DD80 DD81 EE09 EE14 EE17 EE18 FF13 GG09 GG10 GG14 GG20 HH13 HH14 HH20 5F033 HH00 HH04 HH07 HH11 HH13 HH14 HH40 JJ00 JJ01 JJ07 JJ11 JJ13 JJ14 KK05 KK08 KK13 MM05 PP26 QQ09 QQ37 QQ53 QQ73 QQ82 QQ83 RR04 RR21 RR22 SS30 VV07 VV15 XX00 XX02 XX03 XX03 XX31 5F045 AB32 BB08 EB19 GG25 FF27 FF27 FF27 FF27 EE27 FF02 EE02 FF02 EE47 FF02 EE47 FF21 EE47 FF21 EE47 FF21 EE47 FF21 EE47 FF21 EE41 EE21 EE47 FF21 EE41 EE41 EE41 EE41 EE21 EE02 EE47 EE02 EE47 EE41 EE21 EE47 NN72 QQ01 QQ08

Claims (25)

[Claims] 1. A method for forming a film pattern, which comprises forming a film pattern by discharging a liquid droplet containing a film-forming component into a predetermined film-forming region on a substrate by a droplet-discharging method. A method for forming a film pattern, which comprises forming a plurality of film patterns at adjacent positions by ejecting a plurality of droplets that are not mixed with each other. 2. The method for forming a film pattern according to claim 1, wherein the plurality of film patterns formed at the adjacent positions have different functions. 3. The plurality of film patterns are adjacent to each other in a direction parallel to the substrate by discharging the plurality of droplets to positions adjacent to each other in a direction parallel to the substrate. A method of forming a film pattern, which is formed so as to match. 4. The film according to claim 1, wherein the plurality of film patterns are formed so as to be adjacent to each other in a direction perpendicular to the substrate by discharging the plurality of liquid droplets at substantially the same position. Pattern formation method. 5. The liquid material forming one of the plurality of liquid droplets has a boiling point higher than that of the liquid material forming the liquid droplet formed above the one liquid droplet. Low film pattern forming method. 6. The method for forming a film pattern according to claim 4, wherein the plurality of film patterns are formed in the recess by ejecting the plurality of droplets into the recess provided in the substrate. 7. The method according to claim 6, wherein after the plurality of droplets are discharged to the concave portion, centrifugal force is applied to the plurality of droplets to promote separation of the plurality of droplets. A method of forming a film pattern, comprising: 8. The droplet according to claim 1, wherein the plurality of droplets are composed of first droplets and second droplets, and the first droplets are conductive as the film forming component. A method for forming a film pattern, which is a liquid containing fine particles, and the second droplet is a liquid containing an insulator as the film forming component. 9. The method for forming a film pattern according to claim 8, wherein a conductive film is formed from the first droplets, and an insulating film is formed from the second droplets. 10. The method of forming a film pattern according to claim 9, wherein the conductive film is formed by performing heat treatment and / or light irradiation on the first droplet. 11. The lyophilic pattern according to claim 1, further comprising forming a lyophilic pattern and a lyophobic pattern on a predetermined region of the substrate, wherein the plurality of droplets are provided on the lyophilic pattern. And a method of forming a film pattern, wherein the plurality of film patterns are formed on the lyophilic pattern by discharging the liquid-repellent pattern on the area. 12. The interface according to claim 1, wherein the liquid material contained in each of the plurality of droplets is simultaneously removed by evaporation and / or decomposition so that the interfaces of the plurality of film patterns are exposed to the atmosphere. A method for forming a film pattern, which is formed without being exposed to light. 13. A film pattern forming apparatus for forming a film pattern by discharging a liquid droplet containing a film forming component to a predetermined film forming region on a substrate by a droplet discharging method. A film pattern forming apparatus for forming a film pattern by the method for forming a film pattern according to claim 1. 14. The film pattern forming apparatus according to claim 13, including one head capable of ejecting the plurality of droplets. 15. The film pattern forming apparatus according to claim 13, wherein a dedicated head is installed for each of the droplets forming the plurality of droplets. 16. The film pattern forming apparatus according to claim 13, further comprising: a mixing unit that mixes the plurality of droplets, and the mixture unit ejects the plurality of droplets after mixing the plurality of droplets. 17. A conductive film wiring formed by the method for forming a film pattern according to claim 8. 18. A semiconductor chip mounting structure including the conductive film wiring according to claim 17. 19. An electro-optical device comprising the conductive film wiring according to claim 17. 20. A source electrode, a drain electrode, and a gate electrode; and an insulating layer that insulates the electrodes from each other, wherein the electrode and the insulating layer undergo the film pattern forming method according to claim 1. A semiconductor device formed. 21. A light emitting layer and a hole transporting / injecting layer, and a pair of electrode layers sandwiching the light emitting layer and the hole transporting / injecting layer, the light emitting layer and the hole transporting / injecting layer. Is formed by the method for forming a film pattern according to any one of claims 1 to 7. 22. An electronic device including the electro-optical device according to claim 19. 23. An electronic device including the semiconductor device according to claim 20. 24. The light emitting device according to claim 21,
Electronics. 25. A non-contact type card medium containing the conductive film wiring according to claim 17 as an antenna circuit.