JP2003309318A - Starting method of semiconductor laser device and optical communication device using semiconductor laser device - Google Patents

Abstract

(57) Abstract: A semiconductor capable of preventing an excessive thermomodule current from flowing in a heating direction of a thermomodule at the time of starting a semiconductor laser device and preventing a problem caused by the excessive thermomodule current. Provided are an activation method of a laser device and an optical communication device using the semiconductor laser device. When the indicated temperature Ts of the thermistor 20 is lower than a predetermined starting temperature Tref1 when the semiconductor laser device 10 is started, the semiconductor laser device 16 is turned on before the thermomodule current Itec is supplied to the thermomodule 38.
Is supplied with a heating current Ih to preheat the semiconductor laser element 16. Then, the indicated temperature T of the thermistor 20
When s reaches the starting temperature Tref1, power supply to the semiconductor laser element 16 and the thermomodule 38 is started. Thus, the activation of the semiconductor laser device 10 is completed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for starting a semiconductor laser device used for optical communication and an optical communication device using the semiconductor laser device to which the starting method is applied.

[0002]

2. Description of the Related Art For example, a conventional semiconductor laser device used for optical communication or optical amplification is a module in which a semiconductor laser element and an optical fiber are optically coupled to each other.
For example, FIG. 7 of Japanese Unexamined Patent Application Publication No. 2002-9384 and Japanese Unexamined Patent Application Publication 20
It is configured as shown in FIG. 6 of Japanese Unexamined Patent Publication No. 00-216474.

In such a semiconductor laser device, when a laser drive current is supplied to the semiconductor laser element, the semiconductor laser element is driven to emit laser light. This laser light is incident on the optical fiber via the coupling optical system including a lens. The laser light incident on the optical fiber propagates through the optical fiber and is used for a desired purpose. by the way,
In the semiconductor laser device, generally, the light intensity and wavelength of the laser light fluctuate according to the temperature change due to the heat generation of the semiconductor laser device itself or the influence of the ambient environmental temperature. For this reason,
A semiconductor laser device is generally provided with a thermo module in its package. This thermo module, depending on the direction of the current supplied to the Peltier element,
A heat generating operation (heating operation) or a heat absorbing operation (cooling operation) is executed. Further, the amount of heat generation and the amount of heat absorption change depending on the configuration of the thermomodule and the magnitude of its current.

That is, when a temperature change occurs in the semiconductor laser device, the temperature of the semiconductor laser device is detected by a thermistor which is a temperature sensor, and based on the temperature Ts indicated by the thermistor, a drive current (power supplied to the thermomodule is supplied. Hereinafter referred to as "thermomodule current" as appropriate) I
The direction and size of the tec are adjusted, and the heating operation or cooling operation is performed accordingly. By such temperature control by the thermo module, the semiconductor laser device can be maintained at a temperature under almost desired driving conditions. Therefore, the semiconductor laser device is driven in a state where the light intensity and the wavelength of the laser light emitted from the semiconductor laser element are stabilized.

[0005]

However, when the above-mentioned conventional semiconductor laser device is started up in a low temperature environment, the following problems occur. For example, a semiconductor laser device designed to emit laser light having a desired light intensity and wavelength under the condition that the temperature of the semiconductor laser element (instruction temperature Ts of the thermistor) is 25 ° C. has an ambient temperature Tc = 10.
Suppose it was started at ℃. In this case, the thermomodule current Itec flows through the thermomodule in the direction of heating the semiconductor laser element.

When the thermomodule current Itec at this time is monitored, for example, as shown in the graph of FIG.
Immediately after the semiconductor laser device is activated, that is, immediately after the supply of the thermomodule current Itec is started, the thermomodule current Itec may become excessive. Such a phenomenon frequently occurs depending on the control system. When an excessive thermomodule current Itec flows in the heating direction, the thermomodule is overheated, and further, components such as a semiconductor laser device and a lens (or an optical fiber with a lens) arranged on the thermomodule via a substrate. Also, it is rapidly heated to a high temperature. In the graph of FIG. 5, the upper limit value of the thermomodule current Itec in the heating direction is set to -3 A (ampere). However, even if the thermomodule current Itec is suppressed to about this upper limit value, the semiconductor laser element or Depending on conditions such as parts such as lenses placed in a high temperature environment or bad heat dissipation, the temperature may rise to 200 ° C. or higher.

In such a case, for example, a melting point of 148.degree.
If the In-Pb-Ag eutectic solder is used, the solder may be melted and the substrate may be displaced. In this case, the semiconductor laser element and the lens (or the optical fiber with a lens) are displaced from the regular position, and the optical coupling of the semiconductor laser element with the optical fiber is impaired. As a result, the optical output of the semiconductor laser device is significantly reduced. In particular, when the semiconductor laser element causes an angular deviation with respect to the optical fiber due to the positional deviation of the substrate, the optical output is reduced by 95% due to the angular deviation of 0.2 °, for example.

Further, the lens is, for example, low melting glass or A
It is fixed to a metal holder using solder such as u-Sn,
Since this metal holder is fixed to the substrate, if the temperature of the lens and the metal holder rises sharply due to overheating of the thermo module, a large difference in the coefficient of thermal expansion between the lens and the holder will result. As a result, cracks may occur at the joint between the lens and the holder (low melting glass or solder such as Au—Sn).

Even if the cracks are generated, the position of the lens is displaced and the lens is tilted so that the optical axis of the lens is displaced or the lens is detached from the holder. Optical coupling is lost. As a result, a good light output cannot be obtained from the semiconductor laser device. Also, when the optical fiber with a lens to which the laser light from the semiconductor laser element is directly incident is fixed on the substrate via the hot melt connecting material such as solder, the hot melt connecting material is melted, The optical fiber with a lens may be displaced. As a result, the optical coupling of the optical fiber with a lens to the semiconductor laser element is deviated, and the optical output of the semiconductor laser device is significantly reduced.

Further, the thermomodule has a large number of Peltier elements and two plate members on the heat radiating side and the heat absorbing side that sandwich these Peltier elements, and these Peltier elements and the plate members are soldered. Are combined using.
For this reason, this solder may be melted by overheating of the thermomodule and, for example, the Peltier element may drop off, and the thermomodule itself may deteriorate in function or be damaged.

In order to deal with such a problem, it is conceivable to provide means for suppressing the thermo-module current Itec in the heating direction to a predetermined value or less. However, in that case, when the semiconductor laser device is started or driven in a low temperature environment, the thermomodule current Itec in the heating direction is limited, so that the temperature of the semiconductor laser element is maintained at a desired value, for example, 25 ° C. You may not be able to.

The present invention has been made to solve the above problems, and prevents an excessive thermomodule current from flowing to the thermomodule in the heating direction at the time of startup of the semiconductor laser device, thereby preventing the excessive increase of the thermomodule current. An object of the present invention is to provide a method for starting a semiconductor laser device capable of preventing the occurrence of a defect due to a thermomodule current and an optical communication device using the semiconductor laser device to which the starting method is applied.

[0013]

In order to achieve the above-mentioned object, in the present invention, the semiconductor laser element and the semiconductor laser element are heated when supplied with power in one direction and supplied with power in the opposite direction. And a thermomodule that controls the temperature of the semiconductor laser element by cooling the semiconductor laser element when receiving the semiconductor laser element, and the semiconductor laser element is fixed to the thermomodule using a hot-melt connection material. A method of starting the device, comprising supplying a heating current to the semiconductor laser element to preheat the semiconductor laser element by heat generation of the semiconductor laser element itself, and after preheating the semiconductor laser element. , While starting power supply to the thermo module,
Starting the supply of a laser drive current to the semiconductor laser device. A method for starting a semiconductor laser device is provided.

Further, in the present invention, a semiconductor laser element that oscillates a laser beam for optical communication, and a semiconductor laser element that is heated when it is fed in one direction and is fed in the opposite direction. A semiconductor laser device having a thermomodule for cooling the semiconductor laser device to control the temperature of the semiconductor laser device, wherein the semiconductor laser device is fixed to the thermomodule using a hot melt connecting material; A laser drive power supply for supplying one of a laser drive current and a heating current for preheating to the semiconductor laser device; a thermomodule drive power supply for supplying power to the thermomodule; and a laser drive power supply and a thermomodule drive power supply. And a control unit for controlling the operation, the control unit, when starting the semiconductor laser device,
After operating the laser drive power source and supplying a heating current to the semiconductor laser element, the thermomodule drive power source is operated to start power supply to the thermomodule and to the laser to the semiconductor laser element. There is provided an optical communication device characterized by starting supply of a drive current.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. (First Embodiment) As shown in FIG. 1, a semiconductor laser device 10 according to the present embodiment is used, for example, as a signal light source for optical communication or an excitation light source for optical amplification, and is used as a semiconductor laser device 16 and an optical source. The fiber 34 is optically coupled to form a module.

The semiconductor laser device 10 has a thermo module 38 in its package 36. The thermo module 38 includes a plurality of Peltier elements 38a and plate members 38b, 3b sandwiching the Peltier elements 38a.
8c, the plate members 38b and 38c are made of an insulating substrate such as alumina or aluminum nitride. In this example, a plate member 38b is fixed on the inner bottom wall surface of the package 36, and the heat radiation side end (lower side in FIG. 1) of the Peltier element 38a is fixed to the plate member 38b by soldering. Plate member 38c
Is fixed to the heat absorption side end (upper side in FIG. 1) of the Peltier element 38a by soldering.

On the upper side of the thermo module 38, that is, on the plate member 38c, a substrate 40 used for mounting components.
The substrate 40 is fixed to the plate member 38c by a hot-melt connection material, for example, In-Pb-Ag eutectic solder having a melting point of 148 ° C. In addition, this substrate 4
Above the laser diode 0, a laser diode carrier 12 having a semiconductor laser element 16 fixed thereto and a photodiode 46 for monitoring are provided.
Fixed photodiode carrier 42 and lens 4
4 is fixed. The photodiode 46 monitors the light emitting state of the semiconductor laser device 16.

A through hole is formed in the side wall of the package 36, and an optical fiber supporting member 48 is fitted in the through hole. The optical fiber support member 48 is, for example, Fe-N.
It is made of i-Co alloy (trade name: Kovar) or the like. The optical fiber support member 48 has an insertion hole 48a. The tip of the optical fiber 34 is introduced from the outside of the package 36 into the insertion hole 48a. Insertion hole 48
A lens 50 is arranged inside a.

As shown in FIG. 2, a submount (hereinafter, simply referred to as “heatsink”) 14 having a heatsink function is disposed on the laser diode carrier 12, and a semiconductor laser element 16 is disposed on the heatsink 14. Is installed. Further, on the laser diode carrier 12, a sub-mount 18 for the thermistor is arranged at a predetermined distance from the heat sink 14.
A thermistor 20 is installed on the submount 18 as a temperature sensor for detecting the temperature of the semiconductor laser element 16.

A ceramic support 27 is arranged on the laser diode carrier 12, and an Au plating layer 28 is formed on the upper surface of the ceramic support 27.
The Au plated layer 28 serves as a relay portion for electrical wiring to the semiconductor laser element 16. Then, the semiconductor laser device 16 uses the Au wire 29 for the Au plating layer 2
The Au plated layer 28 is connected to the Au wire 2
It is connected to a laser drive power source (not shown) of the semiconductor laser device 16 by means of 9. The electric circuit to the semiconductor laser device 16 is configured in this way.

Another ceramic support base 30 is disposed on the laser diode carrier 12, and Au plating layers 31a and 31b, which serve as relay portions for electrical wiring of the thermistor 20, are disposed on the upper surface of the ceramic support base 30. Are formed respectively. The thermistor 20 is the Au wire 2
9 is electrically connected to the Au plated layers 31a and 31b, and the Au plated layers 31a and 31b are connected to the Au wire 29.
Is connected to the power source (not shown) of the thermistor 20. The electric circuit to the thermistor 20 is configured in this way.

Next, a method of starting the semiconductor laser device 10 according to this embodiment will be described with reference to FIG. FIG. 3 is a block diagram for explaining a method of starting the semiconductor laser device 10 according to this embodiment. First, when the semiconductor laser device 10 is started, the temperature of the semiconductor laser element 16 is detected by the thermistor 20. The temperature information of the semiconductor laser device 16 is converted into a voltage signal,
It is transmitted to the drive control unit 56.

Here, when the instruction temperature Ts of the thermistor 20 is lower than a preset starting temperature Tref1,
That is, when Ts <Tref1, when the power is immediately supplied to the thermo module 38, the thermo module current Itec in the excessive heating direction suddenly flows, and the solder fixing the substrate 40 and the thermo module 38 to each other. It may melt. Therefore, the drive control unit 56 first compares the voltage signal Vts indicating the instruction temperature Ts with the voltage signal Vref1 corresponding to the starting temperature Tref1.

As a result, the temperature T of the semiconductor laser device 16 is increased.
If s is equal to or higher than the starting temperature Tref1, the drive control unit 5
6, a drive start signal is transmitted to the laser drive power source 54,
The laser drive power supply 54 that has received the drive start signal starts supplying the laser drive current Iop to the semiconductor laser element 16. At the same time, a cooling start signal is transmitted from the drive control unit 56 to the thermomodule drive power supply 52, and the thermomodule drive power supply 52 that has received the cooling start signal causes the thermomodule 38 to send the thermomodule current I in the cooling direction.
Power tec. In this way, the laser driving current Iop and the thermomodule current Itec are supplied to the semiconductor laser device 16 and the thermomodule 38, and the semiconductor laser device 1
0 is activated.

On the other hand, when the semiconductor laser device 1 is started up,
When the temperature Ts of 6 is lower than the starting temperature Tref1, the heating start signal is first transmitted from the drive control unit 56 to the laser drive power source 54. In this way, the heating current Ih is supplied from the laser driving power source 54 to the semiconductor laser element 16, the semiconductor laser element 16 heats itself and preheats itself, and its temperature rises.

Thereafter, when the instruction temperature Ts of the thermistor 20 rises and reaches a predetermined starting temperature Tref1, a drive start signal is transmitted from the drive control unit 56 to the laser drive power supply 54, and the laser drive power supply 54 is Semiconductor laser device 16
The power supply of the laser drive current Iop to the laser is started. At the same time, the drive control unit 56 controls the thermomodule drive power supply 52.
The operation start signal is transmitted to the thermo module drive power supply 52 which receives the operation start signal.
8, the power supply of the thermo-module current Itec necessary for keeping the instructed temperature Ts of the thermistor 20 at the predetermined driving temperature Tref2 is started.

Specifically, when Ts> Tref2, the drive control section 56 outputs a control signal for lowering the temperature of the semiconductor laser element 16. At this time, the control signal to the thermomodule drive power supply 52 is a signal for supplying the thermomodule current Itec in the cooling direction according to the deviation. On the other hand, if Ts <Tref2, the drive controller 56
A control signal for raising the temperature of the semiconductor laser device 16 is output. Thermo module drive power supply 5 in this case
The control signal to 2 is a signal for supplying the thermomodule current Itec in the heating direction according to the deviation.

Thus, the semiconductor laser device 10 is activated. The starting temperature Tref1 and the driving temperature Tref2 are preferably Tref1 ≧ Tref2 in order to reliably prevent the thermomodule current Itec in the heating direction from flowing. As described above, in the present embodiment, when the semiconductor laser device 10 is activated, if the instruction temperature Ts of the thermistor 20 is lower than the predetermined activation temperature Tref1, the semiconductor laser device 16 is first supplied with the heating current Ih. , The semiconductor laser element 16 is preheated by its own heat generation, and the thermistor 20
After the instruction temperature Ts of 1 reaches the starting temperature Tref1, the supply of the laser drive current Iop to the semiconductor laser element 16 and the supply of the thermomodule current Itec to the thermomodule 38 are started. Therefore, even when the environmental temperature Tc is low, it is possible to prevent the semiconductor laser device 10 from deteriorating or breaking due to the excessive flow of the thermomodule current Itec in the heating direction at startup.

When it is assumed that the instruction temperature Ts of the thermistor 20 is lower than the starting temperature Tref1 when the semiconductor laser device 10 is started, the first step of detecting the temperature of the semiconductor laser element 16 by the thermistor 20 is omitted. May be. That is, a method may be adopted in which the semiconductor laser device 1 is always supplied with the heating current Ih when the semiconductor laser device 10 is started. Also in this case, since the power supply to the semiconductor laser element 16 is started after the instructed temperature Ts of the thermistor 20 reaches the starting temperature Tref1, the same effect can be obtained.

When the semiconductor laser element 16 is preheated by the heat generated by itself, it is not always necessary that the instructed temperature Ts of the thermistor 20 reaches the starting temperature Tref1. When the instruction temperature Ts reaches a predetermined temperature lower than the starting temperature Tref1, the heating current Ih to the semiconductor laser element 16 is reached.
It is also possible to stop the power supply to the thermo module 38 and then supply the thermo module current Itec in the heating direction to the thermo module 38 so that the instruction temperature Ts reaches the starting temperature Tref1 by the heating operation of the thermo module 38. Also in this case, by appropriately setting the predetermined temperature, it is possible to prevent the thermomodule current Itec from flowing in the thermomodule 38 in an excessive heating direction.

Further, in the first embodiment, the starting temperature Tref1 and the driving temperature Tref2 may be set to a common temperature as the starting / driving temperature Tref. In this case, the starting temperature Tref1 and the driving temperature Tref2 may be read as the starting / driving temperature Tref in the above description, and basically the same starting method and driving method are applied. Further, the laser drive current Iop supplied from the laser drive power source 54 to the semiconductor laser element 16 and the heating current Ih are different concepts of currents having different actions, but in reality, they have the same current value. It is also possible.

Further, instead of the optical fiber 34 that is optically bonded to the semiconductor laser element 16 through the lens 44 or the like in the first embodiment, an optical fiber with a lens that is directly optically bonded to the semiconductor laser element 16 may be used. Good. Also in this case, it is possible to prevent the characteristic deterioration of the semiconductor laser device 16 and to prevent the output reduction due to the optical coupling shift between the semiconductor laser device 16 and the optical fiber with a lens.

(Second Embodiment) FIG. 4 shows a second embodiment of the present invention.
2 shows an optical fiber amplifier 60 as an optical communication device according to the embodiment. The optical fiber amplifier 60 includes the above-mentioned semiconductor laser device 10 as an excitation light source. The optical fiber amplifier 60 includes a signal light input unit 62 to which signal light is input, an EDF (erbium-doped fiber) 64 that is connected to the signal light input unit 62 and amplifies the signal light from the signal light input unit 62, It has a signal light output unit 66 which is connected to the EDF 64 and outputs the amplified signal light.
An optical coupler 68 is inserted in the EDF 64, and the semiconductor laser device 10 is connected to the optical coupler 68 via an optical fiber 34.

A thermomodule drive power supply 52, a laser drive power supply 54, and a drive control unit 56 are installed around the semiconductor laser device 10 for pumping light. When the semiconductor laser device 10 is driven, the semiconductor laser device 10
From which laser light having a desired intensity and wavelength, that is, excitation light, is emitted, and further, the optical fiber 34 and the optical coupler 6
It is input to the EDF 64 via 8. As a result, the signal light input from the signal light input unit 62 is amplified by the pump light from the semiconductor laser device 10 in the EDF 64, and then output from the signal light output unit 66.

As described above, in the present embodiment, the semiconductor laser device 10 is used as the light source of the excitation light, and
Since the starting method described in the embodiment is applied, even when the environmental temperature Tc is low, an excessive thermomodule current in the heating direction does not flow to the thermomodule when the semiconductor laser device 10 is started. Therefore, deterioration or destruction of the semiconductor laser device 10 due to an excessive thermomodule current can be prevented.

In the second embodiment, the optical fiber amplifier 60 having the semiconductor laser device 10 for pumping has been described. This is designed so that in the case of the semiconductor laser device 10 for excitation, the amount of heat generated from the semiconductor laser element 16 is large, and a large thermomodule current Itec flows in consideration of use in a high temperature or low temperature environment. Therefore, it is considered to be suitable as an object to which the present invention is applied. However, the present invention is applied to an optical fiber amplifier 60 including the semiconductor laser device 10 for pumping.
However, the present invention is not limited to the present invention, as long as it is an optical communication device including one or more semiconductor laser devices and is provided with a thermo module for controlling the temperature of the semiconductor laser element of the semiconductor laser device. Can be applied.

[0037]

As described in detail above, according to the present invention, the following effects can be obtained. That is, according to the method of starting the semiconductor laser device according to claims 1 to 3, before the power supply to the thermomodule is started, the heating current is supplied to the semiconductor laser device to preheat the semiconductor laser device. After that, the power supply to the thermomodule and the laser drive current to the semiconductor laser element are started, so that the semiconductor laser caused by the excessive flow of the thermomodule current in the heating direction even when starting at a low environmental temperature. It is possible to prevent deterioration and destruction of the device.

According to the optical communication equipment of claims 4 to 6, when the semiconductor laser device is started up, the operation of the laser drive power source and the thermomodule drive power source is controlled to supply the heating current to the semiconductor laser element. After that, since a control unit that starts power supply to the thermo module and laser drive current to the semiconductor laser element is installed, even when starting at a low environmental temperature, the thermo module current in the excessive heating direction It is possible to prevent the semiconductor laser device from being deteriorated or destroyed due to the flowing of the gas.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a schematic perspective view showing a part of the semiconductor laser device according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram for explaining a method of starting the semiconductor laser device according to the first embodiment of the present invention.

FIG. 4 is a schematic diagram showing an optical fiber amplifier according to a second embodiment of the present invention.

FIG. 5 is an example of a graph showing a result of monitoring a thermomodule current flowing in the thermomodule when the conventional semiconductor laser device is activated at a low environmental temperature.

[Explanation of symbols]

10 Semiconductor Laser Device According to First Embodiment 12 Laser diode carrier 14 heat sink 16 Semiconductor laser device 18 submount 20 thermistor 28, 31a, 31b Au plating layer 26 Insulation area 27, 30 Ceramic support 29 Au wire 34 optical fiber 36 packages 38 Thermo Module 38a Peltier element 38b, 38c plate member 40 substrates 42 Photodiode carrier 44 lens 46 photodiode 48 optical fiber support member 48a insertion hole 50 lenses 52 Thermo Module Drive Power Supply 54 Laser drive power supply 56 Drive controller 60 Optical Fiber Amplifier According to Second Embodiment 62 Signal light input section 64 EDF 66 Signal light output section 68 Optical coupler

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Jun Sandaikawa             2-6-1, Marunouchi, Chiyoda-ku, Tokyo             Kawa Electric Industry Co., Ltd. (72) Inventor Takeshi Aiyoshi             2-6-1, Marunouchi, Chiyoda-ku, Tokyo             Kawa Electric Industry Co., Ltd. F-term (reference) 5F073 AB27 AB28 BA02 EA28 EA29                       FA02 FA22 FA24 FA25 GA23                       GA26 GA31 GA38

Claims (6)

[Claims] 1. A semiconductor laser device and a semiconductor laser device, wherein when the power is supplied in one direction, the semiconductor laser device is heated, and when the power is supplied in the opposite direction, the semiconductor laser device is cooled. A method for starting a semiconductor laser device, comprising: a thermomodule for controlling temperature; wherein the semiconductor laser element is fixed to the thermomodule using a hot-melt connection material, wherein a heating current is supplied to the semiconductor laser element. Then, the step of preheating the semiconductor laser element by heat generation of the semiconductor laser element itself, and after preheating the semiconductor laser element, start supplying power to the thermomodule and A method of starting a semiconductor laser device, comprising the step of starting power supply of a laser drive current. 2. The method according to claim 1, further comprising the step of detecting the temperature of the semiconductor laser device, wherein the semiconductor laser device is preheated when the temperature of the semiconductor laser device is lower than a predetermined starting temperature. Method of starting semiconductor laser device. 3. The method of detecting the temperature of the semiconductor laser device, wherein after the semiconductor laser device is preheated, the temperature of the semiconductor laser device reaches a predetermined starting temperature, and then the thermomodule is connected to the thermomodule. 2. The method for starting a semiconductor laser device according to claim 1, wherein the power supply of the laser drive current to the semiconductor laser element is started together with the power supply of 1. 4. A semiconductor laser device that oscillates a laser beam for optical communication, and a semiconductor laser device that heats the semiconductor laser device when power is supplied in one direction and that is supplied when power is supplied in the opposite direction. And a semiconductor module that controls the temperature of the semiconductor laser element, wherein the semiconductor laser element is fixed to the thermomodule using a hot melt connecting material, and the semiconductor laser element A laser drive power supply that supplies one of a laser drive current and a heating current for preheating, a thermomodule drive power supply that supplies power to the thermomodule, and a control that controls the operation of the laser drive power supply and the thermomodule drive power supply. The semiconductor laser device is activated, the control unit operates the laser driving power source to activate the semiconductor laser device. After supplying a heating current to the body laser element, the thermomodule drive power supply is operated to start supplying power to the thermomodule and start supplying laser drive current to the semiconductor laser element. Optical communication equipment. 5. The semiconductor laser device includes a temperature sensor for detecting the temperature of the semiconductor laser element, and the controller drives the laser when the temperature detected by the temperature sensor is lower than a predetermined starting temperature. The optical communication device according to claim 4, wherein a power supply is operated to supply a heating current to the semiconductor laser element. 6. The semiconductor laser device includes a temperature sensor for detecting the temperature of the semiconductor laser element, and the control unit is configured to operate the temperature sensor after the temperature detected by the temperature sensor reaches a predetermined starting temperature. 5. The optical communication device according to claim 4, wherein a thermomodule driving power supply is operated to start power supply to the thermomodule and power supply of a laser drive current to the semiconductor laser element.