JP2003304012A - Tunnel magnetoresistive element - Google Patents

Abstract

(57) [Problem] To provide a tunnel magnetoresistive element having excellent thermal stability. SOLUTION: In a step of forming a tunnel insulating layer of a tunnel magnetoresistive element, a first step of forming a conductive layer which is a precursor of a tunnel insulating layer, and a second step of oxidizing the conductive layer are provided. Wherein the film forming rate in the first step of forming the conductive layer is 0.4 ° / sec or less.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used for a high density magnetic recording / reproducing head (magnetic disk, magneto-optical disk, magnetic tape, etc.), a magnetic sensor used in automobiles, and a magnetic random access memory (MRAM). The present invention relates to a tunnel magnetoresistive effect element.

[0002]

2. Description of the Related Art Due to the rapid progress of information innovation due to the spread of the Internet and the development of advanced communication networks, the necessity of handling a large amount of information at high speed is increasing. Above all, the hard disk drive (HDD) stores a large amount of information,
Moreover, it is an external recording device capable of high-speed transfer. Giant Magnet Resistive e
The recording density is 60% per year due to technological innovations such as improvement of the playback head performance using ffect (GMR effect).
It is growing at ~ 100%. In addition, mobile communication devices such as mobile phones and laptop computers are now indispensable for daily life, and various information such as character information and moving image information is exchanged through the mobile devices. Even in this mobile device, there is an increasing need for a compact, lightweight, and low-consumption recording medium for instantly storing and transferring a large amount of information, such as flash memory and FeRAM (Ferro electric Ra
Ndom Access Memory) and other non-volatile memories are being developed. In particular, in recent years, as a large-capacity, high-speed nonvolatile memory device, a tunnel magnetoresistive effect (Tunnel Magnet Resist
ive effect: TMR effect next-generation magnetic head and non-volatile random access memory (MRAM: Magnetic Ran)
Expectations for dom Access Memory) are high.

The TMR effect is such that when a voltage is applied between two ferromagnetic layers (free magnetic layer and fixed magnetic layer) laminated with a tunnel insulating layer of about several nm, a tunnel current occurs and This is a phenomenon in which the resistance values differ depending on whether the magnetization directions are parallel or antiparallel. The first report of the TMR effect was Julliere in 1975.
(Physics Letters, vol1. 54A (1975). No.3, p225)
It is due to. Then, at room temperature, Miyazaki (Journal
of Magnetism and Magnetic Materials Vol. 139 (199
5) p231.) And Moodera (Physical Review Letters Vol. 74)
(1995) p3273.) Et al. Reported a magnetoresistance change rate (TMR ratio) of 10% or more, followed by accelerated research and development of TMR phenomenon for application to next-generation magnetic heads for HDDs and MRAM. .

These TMR elements are extremely thin laminated films having a layer thickness of several nm to several tens of nm.
In particular, materials such as Al ₂ O ₃ and AlN that have excellent insulating properties are mainly used for the tunnel insulating layer, but in order to obtain excellent tunnel magnetoresistive properties, the film thickness is extremely thin, approximately 2 nm or less. A tunnel layer is used. To develop the TMR element for magnetic head and magnetic memory device applications, an antiferromagnetic layer is arranged on the pinned magnetic layer side to generate an exchange coupling bias magnetic field and the magnetization direction of the pinned magnetic layer is fixed. The TMR element using this antiferromagnetic layer is called a spin valve TMR element. With this configuration, the free magnetic layer can relatively freely change the magnetization direction with respect to an external magnetic field, and the fixed magnetic layer and the free magnetic layer are relatively changed in magnetization direction to thereby reduce the magnetic resistance. Can occur.

[0005]

The spin valve type TMR element has a high output when it is considered to be applied to a device such as a high-density magnetic head or a high-speed and large-capacity nonvolatile solid-state magnetic memory (MRAM). A device with a large MR ratio is required. Furthermore, in the device manufacturing process, in addition to the need for reproducibility of TMR characteristics on the wafer and between lots, there is no deterioration of TMR characteristics in the manufacturing process, that is, process stability is an important factor.

A high temperature heat treatment process of about 2000 to 300 ° C. is required in the manufacturing process of the magnetic head, and about 400 ° C. is required in the manufacturing process of the MRAM. Applied Physics Letters (Volum
e 73, Number 22, p3288 (1998)), it has been reported that the TMR element increases the TMR ratio by heat treatment. T
The MR ratio will decrease. Since the thickness of the tunnel insulating layer that composes the TMR element is very thin, about 2 nm at the most, an increase in the crystal grain size of the ferromagnetic layer is one factor in the heat treatment at 250 to 300 ° C or higher. Interface diffusion occurs and TM
There is a problem that the R characteristic deteriorates. In particular, the spin valve type TMR element using the Mn-based antiferromagnetic layer has a problem that the characteristics are deteriorated by the heat treatment at 300 ° C. or higher due to the diffusion of Mn.

On the other hand, instead of using an antiferromagnetic layer, a coercive force difference type spin valve TM using Co-Cr-Pt having a large coercive force.
Applied Physics Lette reports on heat resistance of R element
rs (Volume 75, Number 4, p543 (1999))
There is a problem that the characteristics deteriorate.

The present invention improves upon this thermal stability problem,
An object of the present invention is to provide a tunnel magnetoresistive effect element which is stable even at heat treatment at 400 ° C., a magnetic head using the same, a magnetic recording device, and a memory element.

[0009]

The tunnel magnetoresistive element according to the present invention has a free magnetic layer which can easily rotate in magnetization by an external magnetic field and a magnetization which is harder to rotate in response to an external magnetic field than the free magnetic layer. In a tunnel magnetoresistive element having a tunnel insulating layer formed between the fixed magnetic layer and the fixed magnetic layer, an amorphous magnetic layer is included in at least one of the free magnetic layer or the fixed magnetic layer and the tunnel insulating layer. Adjacent free magnetic layer or pinned magnetic layer
Fe, Co, Ni and their alloys as main components, and R
By including at least one element selected from u, Rh, Pd, Ir, Pt, and Au, the above problems can be solved and the above objects can be achieved.

The tunnel insulating layer is selected from at least one of Al oxide, nitride and oxynitride.

The amorphous magnetic layer is made of an oxide, a nitride or an oxynitride containing at least one selected from Fe, Co and Ni, or contains at least one selected from Fe, Co and Ni, Furthermore, Ru, Rh, Pd, I
It is made of an oxide, a nitride or an oxynitride containing at least one element selected from r, Pt and Au. Further, the film thickness of the amorphous magnetic layer may be 0.5 nm or more and 2 nm or less.

At the interface of the pinned magnetic layer on the side opposite to the tunnel insulating layer, an A-Mn system (where A is any one element selected from Pt, Pd, Ir, Fe, Ru, and Rh) antiferromagnetic The magnetization direction of the pinned magnetic layer is fixed because the layers are in contact with each other.

A magnetic head according to the present invention is a tunnel magnetoresistive head for detecting a signal magnetic field from a magnetic recording medium, which comprises two shield portions containing a magnetic material, and
The tunnel magnetoresistive effect element according to the present invention is provided in the gap between the two shield portions, and by doing so, the above problems are solved and the above objects are achieved.

Another magnetic head according to the present invention is a tunnel magnetoresistive head which detects a signal magnetic field from a magnetic recording medium, and is guided by a magnetic flux guide section containing a magnetic body and the magnetic flux guide section. The tunnel magnetoresistive effect element according to the present invention for detecting a signal magnetic field is provided, and the above-mentioned problems are solved and the above-mentioned object is achieved.

A magnetic recording apparatus according to the present invention comprises a magnetic recording medium and a magnetic head of the present invention that scans the magnetic recording medium, and in that respect, the above problems are solved and the above objects are achieved.

The tunnel magnetoresistive effect memory according to the present invention is information for generating a magnetic field for causing the magnetization reversal of the tunnel magnetoresistive effect element of the present invention and the free magnetic layer constituting the tunnel magnetoresistive effect element. The recording conductor wire (word wire portion) and the information reading conductor wire (sense wire) portion for detecting the resistance change of the tunnel magnetoresistive effect element are provided, whereby the above problems are solved. ,
The above object is achieved.

The memory element according to the present invention is constituted by arranging the tunnel magnetoresistive effect memory elements according to the present invention in a matrix, which solves the above problems.
The above object is achieved.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION A tunnel magnetoresistive effect element (hereinafter referred to as a TMR element) of the present invention, a magnetic head using the same, a magnetic recording device, and a memory element will be described below.
An example will be described with reference to the drawings.

(TMR element) This is an embodiment of the present invention.
The TMR element is shown in FIG. In the TMR element 10, the free magnetic layer 11 and the pinned magnetic layer 12 are magnetically separated by the tunnel insulating layer 13, the free magnetic layer 11 is freely magnetized and rotated with respect to an external magnetic field, and the pinned magnetic layer 12 is Free magnetization rotation is more difficult than that of the free magnetic layer 11 with respect to an external magnetic field, and the magnetization direction is fixed. The magnetization direction of the pinned magnetic layer 12 is pinned in a desired direction by the antiferromagnetic layer 14.

The magnetization direction of the free magnetic layer 11 can be freely changed by an external magnetic field (medium signal, magnetic field generated from the word line). A change in resistance can be caused by a change in resistance.

In this embodiment, in order to improve heat resistance, the amorphous magnetic layer 15 is inserted into at least one interface of the free magnetic layer 11 or the fixed magnetic layer 12 on the tunnel insulating layer 13 side. Then, the amorphous magnetic layer 15
The free magnetic layer 11 or the pinned magnetic layer 12 adjacent to (i.e., when the amorphous magnetic layer 15 is disposed between the free magnetic layer 11 and the tunnel insulating layer 13, "the amorphous magnetic layer 15 side of the free magnetic layer 11") When the amorphous magnetic layer 15 is arranged between the pinned magnetic layer 12 and the tunnel insulating layer 13, “the amorphous magnetic layer 15 side of the pinned magnetic layer 12” is mainly Fe, Co, Ni and alloys thereof. It is made of an alloy containing, as a component, at least one element selected from Ru, Rh, Pd, Ir, Pt, and Au. In particular, the amorphous magnetic layer 15 is preferably made of an oxide, a nitride or an oxynitride containing at least one selected from Fe, Co and Ni as a main component. If the tunnel insulating layer 13 is made of Al oxide, nitride, or oxynitride having excellent insulating properties, excellent TMR properties can be obtained. As the heat treatment temperature rises, interdiffusion of Al atoms and oxygen (nitrogen) atoms progresses inside the tunnel insulating layer 13 to form a tunnel insulating layer with less composition fluctuation, and contains at least one selected from Fe, Co, and Ni. Oxygen (nitrogen), which is insufficient from the amorphous magnetic layer 15 made of oxide, nitride, or oxynitride, is supplied and a high-temperature heat treatment is performed to form a dense tunnel insulating layer. Moreover, for the magnetic layer in contact with the amorphous magnetic layer 15,
Fe, Co, Ni and their alloys as main components, Ru, Rh,
It contains at least one element selected from Pd, Ir, Pt, and Au. Oxygen (nitrogen) on the magnetic layer side is added by this additive element.
It is possible to suppress diffusion of oxygen (nitrogen) to the side of the tunnel insulating layer and form the tunnel insulating layer 13 and its interface having excellent thermal stability by promoting the diffusion of oxygen (nitrogen) to the side of the tunnel insulating layer. Therefore, the TMR element of this embodiment is an element having TMR characteristics with excellent thermal stability.

Here, Ru and R included in the magnetic layer (the fixed magnetic layer 12 in FIG. 1) in contact with the amorphous magnetic layer 15 are included.
The content of h, Pd, Ir, Pt, and Au is not particularly limited as long as the content can maintain the ferromagnetic properties, and may be 1 at% or more and 60 at% or less.

The above-mentioned amorphous magnetic layer 15 may further contain Ru, Rh, Pd, Ir, Pt and Au. In this case, the nonmagnetic metal element is present at the interface of the tunnel insulating layer, and the deterioration of the TMR ratio poses a problem. Therefore, the content is preferably 30 at% or less.

For the antiferromagnetic layer 14, it is desirable to use an A-Mn type metal antiferromagnetic material. As an element of A, A is Pt, Pd, I
An alloy of at least one selected from r, Fe, Ru, and Rh is preferable, and an antiferromagnetic material such as Fe-Mn, Rh-Mn, Ir-Mn, Pt-Mn, or Pt-Pd-Mn is preferably used. . Especially Pt which is an ordered alloy
Although -Mn and Pt-Pd-Mn require heat treatment at about 300 ° C for ordering, they are excellent materials from the viewpoint of heat resistance after elementary heat treatment.

In FIG. 1, the antiferromagnetic layer 14 is formed so that the pinned magnetic layer 12 and the antiferromagnetic layer 14 have good exchange coupling.
A magnetic layer made of Fe, Co, Ni, or an alloy thereof may be inserted in the side interface.

Further, the pinned magnetic layer 12 is composed of magnetic films 22 and 23 exchange-coupled via a non-magnetic film 21 for exchange coupling as shown in FIG. 2, and the magnetic film 22 in contact with the amorphous magnetic layer 15 is A magnetic alloy containing Fe, Co, Ni and an alloy thereof as a main component and containing at least one element selected from Ru, Rh, Pd, Ir, Pt and Au may be used.

With the film structure of the pinned magnetic layer 12 as shown in FIG. 2, it becomes possible to generate an exchange coupling magnetic field larger than that in FIG. 1, and it becomes difficult to reverse the magnetization of the pinned magnetic layer 12. it can. Ru and I are used for the exchange coupling film 21.
Any one of r, Rh, Re, Cr, and Cu is used, and the film thickness is 0.4 to
3 nm is desirable. The pinned magnetic layer shown in FIG. 2 is called a laminated ferri structure.

In FIGS. 1 and 2, the fixed magnetic layer 12 and the tunnel are disconnected.
A structure in which an amorphous magnetic layer 15 is provided at the interface with the edge layer 13.
Of the free magnetic layer 11 and the tunnel insulating layer 13
Of course even if the amorphous magnetic layer 15 is provided at the interface
Yes. In this case, the free magnetic layer 11 contains Fe, Co, Ni and
Based on these alloys, Ru, Rh, Pd, Ir, Pt, Au
Use a magnetic alloy containing at least one selected element
However, it is important that the free magnetic layer 11 has excellent soft magnetic characteristics.
Ni is necessary to improve the soft magnetic properties. _xCo_yFe
_z(0.6 ≦ x ≦ 0.9, 0 ≦ y ≦ 0.4, 0 ≦ z ≦ 0.3) or Ni
_{x '}Co_{y '}Fe_{z '}(0≤x'≤0.4, 0.2≤y'≤0.95, 0≤z'≤0.
You may use the soft magnetic film of 5).

The tunnel insulating layer 13 may be made of either an insulator or a semiconductor, but in particular Mg, Ti, Zr, H.
Elements selected from IIa to VIa containing f, V, Nb, Ta and Cr, lanthanoids containing La and Ce, and IIb to IVb containing Zn, B, Al, Ga and Si, and F, O, C and N. , B is preferably a compound with at least an element. In particular, Al oxides, nitrides, or oxynitrides have excellent insulating properties as compared with other materials, can be thinned, and have excellent reproducibility.
As a method of forming the tunnel insulating layer 13, for example, a method of forming an oxide of Al will be described as an example. After forming an Al metal layer that is a precursor of the tunnel insulating layer 13, pure oxygen or Ar in a vacuum is used. A natural oxidation method of introducing a mixed gas of an inert gas and pure oxygen to oxidize it, or a method of generating plasma in a mixed gas of an inert gas such as Ar and pure oxygen to oxidize the surface of the conductive layer 12A by plasma, Radical oxidation method,
Alternatively, in an Ar atmosphere or in an Ar + O ₂ atmosphere, Al (Al
By skipping the ₂ O ₃ ) target by a physical method, the tunnel insulating layer 13 made of a good Al oxide that is homogeneous and has no pinhole is formed. The plasma and radicals can be generated by usual means such as ECR discharge, glow discharge, RF discharge, helicon or inductively coupled plasma (ICP). Al nitrides and oxynitrides can also be produced by replacing part or all of oxygen with nitrogen.

The method for forming the amorphous magnetic layer 15 made of at least one oxide, nitride or oxynitride selected from Fe, Co and Ni is almost the same as the method for forming the tunnel insulating layer 13 described above. It is possible to create.

TM which is the embodiment of the present invention described above
As shown in FIG. 3, the R element has a structure in which a current flows in a direction substantially perpendicular to the film surface of the tunnel insulating layer 13,
Physical or chemical etching methods such as ion milling, FIB (focused ion beam), and RIE (reactive ion etching) used in semiconductor processes and GMR head manufacturing processes, and steppers for forming fine patterns. It is possible to fabricate an element as shown in FIG. 3 by performing fine processing in combination with a photolithography technique using the EB method or the like.

4 (a) to 4 (h) show a process of forming a mesa type element as shown in FIG. In the step (a), the TMR element part 505 is formed on the lower electrode part 503 formed on the substrate.
The above film is further formed with a part 502 ′ of the protective layer / upper electrode portion.

Next, in step (b), a resist is applied and baked as a processing pattern for the lower electrode portion 503, and then a resist pattern is formed by performing photolithography or EB exposure and development, and etching by ion irradiation. Then, the lower electrode portion 503 is processed.

In step (c), the TMR element portion 505 is transferred again to a resist coated with a processing pattern for cutting out into a mesa shape, and the time required for etching is controlled so that the mesa shape has an optimum thickness. Form a joint.

In step (d), an interlayer insulating layer is deposited before the resist used for processing is peeled off and the mesa-type junction is surrounded by the interlayer insulating layer 501.

In step (e), the resist and the interlayer insulating layer 501 on the resist are removed by lift-off cleaning, and in step (f), the upper electrode portion 502 is deposited. In the embodiment described below, Ta (5n
m) / Cu (500nm) / Pt (50nm) / Ta (5nm).

In step (g), a resist pattern for wiring the upper electrode portion 502 is formed by photolithography or EB exposure and development, and in step (h), a desired TMR element is formed by patterning by ion etching.

As described above, the TMR element shown in FIG. 3 was prepared and sandwiched between the upper electrode portion 502 and the lower electrode 503.
A current is passed through the TMR element section 505 to read the voltage. The interlayer insulating layer 501 has a function of preventing an electrical short circuit between the upper electrode 502 and the lower electrode 503.

By using the element structure as shown in FIG. 3,
It becomes possible to read the output by passing a current in the direction perpendicular to the film surface of the TMR element unit 505. It is also effective to use CMP, cluster ion beam etching, or ECR ion etching for flattening the surface of the electrodes and the like. As the electrode material, a low resistance material having a resistivity of 100 μΩcm or less, such as Pt, Au, Cu, Ru, Al and TiN, may be used. As the interlayer insulating layer 501, a layer having excellent insulating properties such as Al ₂ O ₃ or SiO ₂ may be used.

For the film formation of the TMR element of the present embodiment, pulse laser deposition (PLD), ion beam deposition (IBD), cluster ion beam or RF, DC,
It can be created by the sputtering method such as ECR, helicon, ICP or facing target, and the PVD method such as MBE method.

(MRAM) Using the tunnel magnetoresistive effect element of this embodiment as described above, a magnetic random access memory (MR) having high output and excellent heat resistance shown in FIG. 5 is used.
AM) can be created.

The MRAM element according to one embodiment of the present invention is made of Cu, as represented by A1 shown in FIG.
Are arranged in a matrix at the intersections of the sense lines 601 for detecting the resistance change of the TMR element made of Al and Al and the word line 602 for generating a magnetic field in the TMR element, and the signal is provided on each line. Signal information is recorded by a two-current coincidence method using a synthetic magnetic field generated when a current is passed.

A basic example of the write operation and the read operation by the current of the magnetic memory device in FIGS. 6 to 8 will be described. In each figure, as an example, the free magnetic layer 11 / tunnel insulating layer 13 / of the TMR element shown in FIG.
The pinned magnetic layer 12 is extracted and shown as a memory element. The free magnetic layer 11 in the figure will be described as a memory layer.

In FIG. 6, in order to read the magnetization state of each element individually, a switch element 70 represented by a FET is provided for each element.
3 shows a configuration provided with 3. This random access memory can be easily constructed on a CMOS substrate. Further, FIG. 7 shows a configuration in which a non-linear element 704 (or a rectifying element) is used for each element. Here, the nonlinear element 704
Is a varistor, a tunnel element, or 3 of the above configuration.
You may use a terminal element. This random access memory can be manufactured on an inexpensive glass substrate only by increasing the film forming process of the diode. Also in FIG.
Switching element 70 for element isolation as shown in FIGS. 6 and 7.
3 or directly using the non-linear element 704
An element is arranged at the intersection of the read line 702 and the sense line / word line 701. In each of FIGS. 6 to 8, the bit line is used in combination with a sense line for reading a resistance change by passing a current through the element. However, in order to prevent malfunction and element destruction due to the bit current, the sense line and the bit line are prevented. May be separately provided. At this time, it is preferable that the bit line is arranged at a position electrically insulated from the element and parallel to the sense line. Further, in the case of current writing, it is desirable that the distance between the word line and the bit line and the memory cell is about 500 nm or less in terms of power consumption.

(Magnetic Head) By using the TMR element of this embodiment, a magnetic head having high output and excellent heat resistance as shown in FIGS. 9 and 10 can be manufactured. Figure 9
10 and 10 are diagrams for explaining the magnetic head according to the embodiment of the present invention.

The magnetic head shown in FIG. 9 is an example of a so-called shield type magnetic head. In FIG. 9, two shields made of a magnetic material (upper shield 203 and lower shield 202)
The TMR element portion 201 is provided in the reproducing gap 204 of the two shield portions. For recording, a current is passed through the winding portion 205 to write a signal to a recording medium (not shown) by a leakage magnetic field from a recording gap 207 between the recording magnetic pole 206 and the upper shield 203, and for reproduction, a magnetic recording medium (not shown). Signal magnetic field from the TMR provided between the reproduction gap 204 (shield gap)
The reading is performed by the element unit 201. Figure 9
Although not shown in FIG. 3, the TMR element unit 201 may have electrode portions connected to the upper and lower sides of the film, and the upper and lower electrode portions may be electrically insulated from the upper and lower shields by an insulating layer. May be connected to the upper and lower shields so that the upper and lower shields also serve as electrode portions. Upper and lower shield 2
Soft magnetic films such as Ni-Fe, Fe-Al-Si, and Co-Nb-Zr alloys are used for 03 and 202. To control the magnetic domains of the free magnetic layer of the TMR element unit 201, a high coercive force magnetic film of Co-Pt, Co-Pt-Cr alloy or the like is arranged so as to sandwich the TMR element from both sides in the direction perpendicular to the plane of the drawing to generate a bias magnetic field. Add. Also, the insulating portion 208
For this, an insulating film of Al ₂ O ₃ , AlN, SiO ₂ or the like is used.

Further, as shown in FIG. 10, there is a magnetic flux guide (yoke) portion made of a magnetic material, and the T of the present embodiment is used as an element for detecting the signal magnetic field guided by this magnetic flux guide portion.
By using the MR element portion 301, it is possible to realize a yoke type magnetic head having a reproducing head portion having higher output and excellent thermal stability. A signal magnetic field from a recording medium (not shown) is guided by a yoke portion 302 which also serves as a lower shield and is connected to the yoke portion 302.
Is read by. In Fig. 13, TMR
The structure is such that the yoke portion also serves as the lower lead portion connected to the element portion 301. In FIG. 13, the entire free magnetic layer of the TMR element portion or a part thereof may also be used as the yoke portion. The yoke-type magnetic head is inferior to the shield-type magnetic head in output because the TMR element that detects the signal magnetic field generated from the magnetic recording medium is farther away from the recording medium, but the output is inferior. By the contact of the head
The yoke type magnetic head using the TMR element of the present embodiment is excellent as a streamer application in which the magnetic recording medium is a tape, because it is excellent in destruction and thermal shock of the TMR element part.

(Magnetic Recording / Reproducing Apparatus) A magnetic recording / reproducing apparatus according to an embodiment of the present invention will be described below with reference to FIGS. 11 and 12 and 13. Using the magnetic head according to the embodiment of the present invention shown in FIGS. 9 and 10, the high-density magnetic recording device shown in FIGS. 11 and 12 and 13 can be configured.

As shown in FIG. 11, the magnetic head 401,
The drive unit 402, the magnetic recording medium 40 for recording information
3 and the signal processing unit 404 can be used to configure the magnetic recording device 400 having excellent thermal stability.

12 and 13 show the configuration of another magnetic recording / reproducing apparatus using the magnetic head according to the embodiment of the present invention. 12 is a perspective view of a rotary drum device of the magnetic recording / reproducing apparatus, and FIG. 13 is a schematic view of a traveling system of the magnetic recording / reproducing apparatus.

The rotary drum device 103 shown in FIG. 12 has a lower drum 106 and an upper rotary drum 102, and a magnetic head 105 is provided on the outer peripheral surface thereof. The magnetic tape (not shown) runs along the lead 104 while being inclined with respect to the rotation axis of the upper rotary drum 102. Magnetic head 10
5 slidably inclines with respect to the running direction of the magnetic tape. In addition, the upper rotary drum 102 and the magnetic tape are in close contact with each other so that the upper rotary drum 102 and the magnetic tape can slide stably.
A plurality of grooves 101 are provided on the outer peripheral surface of 2. The air caught between the magnetic tape and the upper rotary drum is discharged from this groove 101.

As shown in FIG. 13, the traveling system of the magnetic recording / reproducing apparatus includes a rotating drum device 113, a supply reel 107,
Take-up reel 122, rotating post 108, 110, 1
11, 116, 117, 119, inclined posts 112, 1
15, a capstan 118, a pinch roller 120, and a tension arm 109 are provided. Rotating drum device 1
On the outer peripheral surface of 13, the magnetic head 105 according to the embodiment of the present invention described above is arranged. Supply reel 1
The magnetic tape 121 wound around 07 is the pinch roller 1
20 and the capstan 118 are drawn in, and guided by the inclined posts 112 and 115, pressed against the magnetic heads 114 and 123 mounted on the rotating drum device 813, and the pinch roller 120 and the capstan 11 are moved.
It is taken up by the take-up reel 122 through the gap between the reels 8 and 8. This rotary drum device is of an upper rotary drum type, and the reproducing magnetic head 114 is arranged from the outer peripheral surface of the rotary drum 20.
Two pieces are attached so as to protrude by about μm. In the magnetic recording / reproducing apparatus using the magnetic head according to the embodiment of the present invention, if the yoke type magnetic head as shown in FIG.
The shape of the TMR element does not change. In addition, high reliability can be secured because there is very little risk of electrostatic breakdown of the TMR element due to contact sliding and corrosion of the TMR element due to chemical reaction substances from the magnetic tape or the atmosphere. Further, since the magnetic head using the tunnel magnetoresistive effect film of the present invention, which has the performance superior to that of the conventional magnetic head, is mounted, the thermal stability is excellent and a high recording density can be achieved.

The present invention will be described below with reference to more detailed specific examples.

(Example 1) Spin valve type shown in FIG.
Example 1 of the present invention regarding a TMR element will be described.

The ultimate vacuum is 1 × 10 ^-8 Torr (1 Torr = 133.322P
a) DC and RF magnetron sputtering method on Si substrate with 500 nm thermal oxide film in the following deposition chamber
A TMR film was prepared.

First, Ta (3 nm) / Cu (5
0 nm) / Ta (3 nm) were laminated. On top of that, the Pt of the antiferromagnetic layer 14
-Mn (20 nm), [Co-Fe] _0.8 -Pt _0.2 (3 nm) of the fixed magnetic layer 12,
Fe-O (1 nm) of the amorphous magnetic layer 15 was laminated. The amorphous magnetic layer 15 was formed by depositing Fe (1 nm) and then maintaining the oxygen gas pressure in a vacuum at 100 Torr at room temperature for 10 minutes. Al-O (1 nm) of the tunnel insulating layer 13 was formed on it. The film thickness in parentheses of the Al-O tunnel insulating layer indicates the total design film thickness of Al before oxidation treatment.
After forming a 0.7 nm film, it was created by repeating the natural oxidation of the Al layer by introducing oxygen gas into the oxidation chamber evacuated to a vacuum. The conditions for the natural oxidation method of Al were held for 1 minute at room temperature in an oxygen-containing atmosphere of 200 Torr.

Further, as the free magnetic layer 11, Co-Fe (1 nm) / N
i-Fe (3 nm) and Ta (15 nm) / Pt (10 nm) were formed as an oxidation protection layer. Next, by using photolithography and ion milling, a mesa type spin valve type TMR as shown in FIG.
The device was produced through the manufacturing process shown in FIG.

In the step of FIG. 4F, Ta (5 nm) / Cu (500 nm) / Pt (50 nm) / Ta (5 nm) was formed as the upper electrode portion 502. The size of the TMR element portion was 2 μm × 6 μm. The sample of this example created as described above is referred to as Example sample 1.

As a comparative example, the TMR film of the present embodiment has a film structure substantially similar to that of the present embodiment, but the amorphous magnetic layer 15 is not provided.
Furthermore, the fixed magnetic layer 12 is made of Co-Fe (3 nm) TMR.
A device was created. The sample of this comparative example is referred to as a conventional sample A.

After the device was manufactured, a heat treatment was performed in a magnetic field in order to generate exchange coupling between the antiferromagnetic layer 14 and the pinned magnetic layer 12. The heat treatment condition is that a magnetic field of 5 kOe is applied in parallel to the film surface, the temperature is raised from room temperature to 280 ° C. in 3 hours, the temperature is kept at 280 ° C. for 1.5 hours, and then the temperature is lowered to room temperature in 6 hours. It was Then, in order to investigate the TMR characteristics, the magnetic resistance was measured by the DC four-terminal method. Further, in order to examine the heat resistance of the TMR element produced, heat treatment was performed up to 400 ° C. After each heat treatment, a magnetic field of 1 kOe was applied at room temperature to measure the tunnel magnetoresistance change rate (hereinafter referred to as TMR ratio). The heat-resistant heat treatment conditions were such that the temperature was raised from room temperature to each set temperature over 3 hours, held at the set temperature for 30 minutes, and then lowered to room temperature. The results are shown in Table 1.

[0061]

[Table 1]

As described above, it can be seen that the TMR element of this example is very excellent in thermal stability of TMR characteristics as compared with the conventional element. Further, using the element of Example Sample 1 ′ heat-treated to 400 ° C., the dependency of the number of heat-treatments was investigated when the heat treatment step of holding the temperature at 200 ° C. for 1 hour was set as one cycle. For comparison, the conventional sample A ′ after the heat treatment at 280 ° C. was also carried out in the same manner. The results are shown in Table 2.

[0063]

[Table 2]

From the above results, it was found that the TMR element of this example is superior in thermal stability to the conventional element.

(Example 2) As Example 2 of the present invention, a spin valve type TMR element in which the pinned magnetic layer 12 shown in FIG. 2 has a laminated ferri structure will be described. Ultimate vacuum is 1
TMR films were prepared by DC and RF magnetron sputtering on a Si substrate with a thermal oxide film of 500 nm in a film forming chamber of × 10 ^-8 Torr or less. First, Ta (3 nm) / Cu (50 nm) was laminated as a lower electrode on the substrate. The Cu lower electrode surface was etched by the ECR etching method.

Further, as an underlayer of the antiferromagnetic layer 14, Ta (3
nm) / Ni-Fe-Cr (4 nm) were laminated. Antiferromagnetic layer 1 on it
4 Pt-Mn (20 nm), pinned magnetic layer 12 Co-Fe (3 nm) / Ru (0.8
nm) / Co-Fe (1 nm) / Fe _0.9 -Pt _0.1 (3 nm), and Co-Fe-Pt-O (0.5 nm) of the amorphous magnetic layer 15 was formed. The amorphous magnetic layer 15 was formed by depositing Co _0.6 -Fe _0.25 -Pt _0.15 (0.5 nm) and then performing plasma oxidation in vacuum. The plasma oxidization conditions were Ar + with oxygen gas pressure adjusted to 75%.
150W for one-turn coil in O ₂ mixed gas (0.8mTorr)
Oxygen plasma was generated by applying the RF power of, and the oxidation time was 30 seconds. On top of that, Al-O of the tunnel insulating layer 13
(1 nm) was created. The film thickness in parentheses of the Al-O tunnel insulating layer shows the total value of the design film thickness of Al before the oxidation treatment.
The film was formed by repeating the process of depositing 0.3 to 0.7 nm of Al and then introducing oxygen gas into the oxidation chamber evacuated to vacuum to naturally oxidize the Al layer. The condition of Al natural oxidation method is 200 Torr
And kept at room temperature for 1 minute.

Further, as the free magnetic layer 11, Ni-Fe (3 nm),
Ta (15 nm) / Pt (10 nm) was formed as an oxidation protection layer. Then E
A mesa-type spin-valve TMR element as shown in FIG. 3 was manufactured using B lithography, photolithography, and ion milling through the manufacturing process shown in FIG.
In the process of FIG. 4F, Ta (5nm) / C is used as the upper electrode portion 502.
u (500 nm) / Pt (50 nm) / Ta (5 nm) was formed. The size of the TMR element part was 0.1 μm × 0.2 μm. The sample of this example created as described above is referred to as Example sample 2. As a comparative example, the TMR film of the present embodiment has a film structure substantially similar to that of the present embodiment, but the pinned magnetic layer 12 is made of Co without the amorphous magnetic layer 15.
A TMR element composed of -Fe (3nm) / Ru (0.8nm) / Co-Fe (3nm) was prepared. The sample of this comparative example is referred to as a conventional sample B.

After the element was manufactured, a heat treatment was carried out in a magnetic field in order to generate exchange coupling between the antiferromagnetic layer 14 and the pinned magnetic layer 12. The heat treatment condition is 3 k from room temperature to 280 ° C. with a magnetic field of 5 kOe applied in the longitudinal direction of the element parallel to the film surface.
After raising the temperature and holding at a temperature of 280 ° C for 10 hours,
The temperature was lowered to room temperature in 6 hours. Then, in order to investigate the TMR characteristics, the magnetic resistance was measured by the DC four-terminal method. In order to investigate the heat resistance of the TMR element created, 400
After heat treatment to ℃, after each heat treatment, a magnetic field of 1 kOe was applied at room temperature to measure the TMR ratio. Heat treatment conditions for heat resistance are 3 hours at the set temperature after increasing from room temperature to each set temperature over 3 hours.
After holding for 0 minutes, the temperature was lowered to room temperature. The results are shown in Table 3.

[0069]

[Table 3]

As described above, it can be seen that the TMR element of this example is very excellent in thermal stability of TMR characteristics as compared with the conventional element.

Example 3 As Example 3 of the present invention, in the film structure of the spin valve type TMR element shown in FIG.
A case where the amorphous magnetic layer 15 ′ is formed also at the interface between the tunnel insulating layer 13 and the free magnetic layer 11 will be described. The sample was prepared according to the following procedure. Ultimate vacuum
A TMR film was prepared by applying a magnetic field of 100 Oe on the surface of a Si substrate with a thermal oxide film of 500 nm by DC and RF magnetron sputtering in a deposition chamber of 1 × 10 ^-8 Torr or less. First, Ta (3nm) / Pt (100nm) /
Ta (3 nm) / Ni-Fe (3 nm) was laminated. Antiferromagnetic layer 1 on it
4 of Ir-Mn (20 nm) and Co _0.45 -Fe _0.45 -Pt of pinned magnetic layer 12
_0.1 (3 nm), Fe-Ni-O (0.5 nm) of the amorphous magnetic layer 15 was formed. Amorphous magnetic layer 15 is Fe _0.6 -Ni _0.4 (1 nm)
Was formed by performing plasma oxidation in vacuum after forming a film. The plasma oxidization conditions are as follows: In the Ar + O ₂ mixed gas (0.8mTorr) where the oxygen gas pressure is adjusted to 75%, oxygen plasma is generated by applying 150W RF power to the one-turn coil, and the oxidization time 30 Went in seconds. Al-N (1 nm) of the tunnel insulating layer 13 was formed on it. The film thickness in the parentheses of the tunnel insulating layer 15 indicates the designed film thickness of Al before the nitriding treatment. The tunnel insulating layer 15 introduces a mixed gas of 1 mTorr of Ar gas and nitrogen gas into the chamber evacuated to a vacuum with the flow rate adjusted so that the nitrogen gas pressure is 80% of the whole, and 100 W RF power is supplied to the one-turn coil. Was generated to generate nitrogen plasma, and the Al layer was plasma-nitrided.
Furthermore, Fe-O (0.5n
m) was formed. The amorphous magnetic layer 15 'was formed by sputtering Fe in a mixed gas of Ar gas and oxygen gas (Ar partial pressure: 0.8 mTorr, oxygen gas partial pressure: 0.1 mTorr).

Fe _0.5 -Ni _0.4 -Pi is used as the free magnetic layer 11.
_0.1 (0.5 nm) / Ni-Fe (3 nm), Ta (15 nm) / Pt as an oxidation protection layer
(10 nm) was formed. Next, using photolithography and ion milling, a mesa-type spin-valve TMR element as shown in FIG. 3 was produced through the manufacturing process shown in FIG.

In the step of FIG. 4F, Ta (5 nm) / Cu (500 nm) / Pt (50 nm) / Ta (5 nm) was formed as the upper electrode portion 502. The size of the TMR element part was 4 μm × 12 μm. The sample of this example created as described above is referred to as Example sample 3.

As a comparative example, the film structure is almost the same as that of the TMR film of this embodiment, but the amorphous magnetic layers 15 and 15 'are used.
Furthermore, a TMR element having no fixed magnetic layer 12 and composed of Co-Fe (3 nm) for the fixed magnetic layer 12 and Ni-Fe (5 nm) for the free magnetic layer 11 was prepared. The sample of this comparative example is referred to as a conventional sample B. Note that TM
The element was processed so that the direction of the magnetic field applied during the formation of the R film was the longitudinal direction of the element.

Ir-Mn exhibits a spin valve characteristic because it produces a one-way anisotropic magnetic field due to the magnetic field during film formation. Therefore, the magnetic resistance was measured at room temperature after the device was manufactured. afterwards,
A magnetic field of 5 kOe was applied in the longitudinal direction of the TMR element to examine the heat resistance of the element. The holding time at the set temperature in the heat treatment was 1 hour. Table 4 shows the measurement at room temperature after each heat treatment temperature.
TMR ratio (upper) and coercive force of free magnetic layer 12 (lower)
Indicates.

[0076]

[Table 4]

In the sample C of the conventional example, the TMR ratio increased with an increase in the heat treatment temperature, and the maximum value of 28% was obtained at 300 ° C. When the heat treatment temperature was further increased, the TMR ratio decreased. Free magnetic layer 12
The coercive force showing the soft magnetic property was low until the heat treatment at 250 ℃, but the coercive force increased with the increase of the heat treatment temperature above 300 ℃, and the soft magnetic property was deteriorated. As this conventional example shows, the maximum TMR ratio and the temperature at which the free magnetic layer exhibits good coercive force are different, and the temperature at which the excellent characteristics of both can be obtained is about 250 ° C, 300 ° C or more. The result was that the overall TMR characteristics deteriorated.

On the other hand, the TMR element of this example (Example sample C)
Although the characteristics of TMR ratio and coercive force during film formation are worse than those of Conventional Sample C, the TMR ratio increases as the heat treatment temperature rises, and the TMR ratio does not decrease even after heat treatment at 300 ° C or higher. It showed excellent stability. Furthermore, the coercive force was reduced by heat treatment at 200 ° C, and no deterioration in soft magnetic properties was observed even if the heat treatment temperature was increased thereafter. Therefore, the TMR element of the present embodiment is
It was found that the thermal stability of the properties (TMR ratio and soft magnetic properties of the free magnetic layer) was very good.

Example 4 A magnetoresistive effect memory element (MRAM) was produced using the TMR element produced in Example 1.
First, see Fig. 6 on a Si substrate with 3000 Å thermally oxidized SiO2 film.
After forming the word line 702 made of Cu and forming an Al2O3 insulating film, the sense line 700 made of Cu is formed.
Was produced. Here, after the surface was once smoothed by CMP, a TMR film was prepared. TMR created in Example 1
A film having the same film structure as the device was formed, and the film structure is shown below. The numerical value in parentheses indicates the film thickness, and the unit is nm. The following example sample 4 and conventional example sample D were performed in the same manner as in the method of forming the TMR film shown in example 1.

Example Sample 4: Pt-Mn (20) / [Co-Fe] _0.8 -Pt
_0.2 (3nm) / Fe-O (1nm) / Al-O (1.0) / Co-Fe (1) / Ni-Fe (3) Conventional sample D: Pt-Mn (20) / Co-Fe (3nm) /Al-O(1.0)/Co-Fe
(1) / Ni-Fe (3) Ta (5nm) / Pt as a part of the protective layer and upper electrode of the above 2 samples
(5 nm) was formed. First, at this stage, both samples were heat-treated in a magnetic field of 5 kOe at 280 ° C. for 5 hours. Next, a TMR element was manufactured by the method shown in Example 1. Finally, a sense line / word line 701 was formed as an upper electrode of the TMR element to manufacture a single memory element without the switch element 703 shown in FIG. A free magnetic layer 11 of the TMR element is generated by applying a current to the word line 702 and the sense line / word line 701 to generate a magnetic field.
(In this example, both samples were Co-Fe (1 nm) / Ni-Fe (3 nm)
Information "0" was recorded by reversing the magnetization direction of the film). Next, an electric current was applied to the word line 702 and the sense line / word line 701 in the opposite direction to the above direction to generate a magnetic field to cause magnetization reversal of the free magnetic layer 40 and record information "1". A bias voltage was applied between the sense line 700 and the sense line / word line 701 to flow a sense current, and the element voltages in the state of information “0” and information “1” were measured. The output difference of the same degree was obtained in the magnetic memory element using the example sample D. Therefore, it was found that the two magnetic memories thus manufactured have a memory function with the free magnetic layer 11 as an information recording layer.

Next, these TMR elements are mounted on a CMOS substrate as shown in FIG.
An integrated memory was manufactured with a memory device having a basic structure as shown in FIG. The device array has a total of 8 blocks, with 16 × 16 device memory as one block. First, the FET is used as a switching transistor (SW-Tr), the CMOS is arranged on the matrix, and the surface is flattened by CMP. Set up in. The element cross section of each sample is 0.
The size was 1 μm × 0.2 μm. The remaining one element in each block was a dummy element for canceling the wiring resistance, the element minimum resistance, and the FET resistance. Note that Cu was used for all the word lines and bit lines. A magnetic random access memory as shown in FIG. 5 was formed, and finally hydrogen sintering treatment was performed at 400 ° C.

8 due to the combined magnetic field of the word line and the bit line
Magnetization reversal of each free magnetic layer (Co-Fe (1 nm) / Ni-Fe (3 nm) film in this case) was simultaneously performed on 8 elements of one block, and signals of 8 bits each were recorded. Next, the FET gate made of CMOS was turned on one by one for each block, and a sense current was passed. At this time, the voltage generated in the bit line, the element and the FET in each block was compared with the dummy voltage by the comparator, and 8-bit information was read simultaneously from the output voltage of each element. As a result, in the MRAM using the example sample 4, the element output was obtained as in the case of the single magnetic memory element.
The MRAM using was almost no output. It is considered that this is because the TMR element of this example can withstand the hydrogen sintering treatment at 400 ° C., but the conventional element cannot withstand it.

(Embodiment 5) Using a TMR element having the same film structure as that of the embodiment sample 2 used in the embodiment 2 and the conventional sample B, a shield type head as shown in FIG. evaluated. An Al ₂ O ₃ —TiC substrate was used as a substrate, and a Ni _0.8 Fe _0.2 alloy was formed by plating on the upper recording magnetic pole 206, the upper shield 203, and the lower shield 202. The electrode part composed of a laminated film of Cu, Pt, and Ta is arranged above and below the TMR element part, and Al
Insulated from the upper and lower shields with ₂ O ₃ .

The direction of the easy magnetization axis of the pinned magnetic layer 12 is set to the signal magnetic field direction to be detected so that the easy magnetization direction of the free magnetic layer 11 is perpendicular to the signal magnetic field direction to be detected (track width direction). Anisotropy was imparted to the magnetic film so as to be parallel. This anisotropy imparting method is as follows. First, after forming a TMR film, heat treatment is performed in a magnetic field of 280 ° C. in a magnetic field of 5 kOe for 5 hours.
After defining the easy direction of the pinned magnetic layer, further 100 at 200 ℃
Heat treatment was performed for 1 hour in a magnetic field of Oe, and the easy axis of the free layer was defined. The reproducing gap 204 of the shield type magnetic head produced as described above was 0.1 μm, the track width of the TMR element was 0.5 μm, and the MR height was 0.5 μm. The shield type magnetic heads having the same film configurations as those of the example sample 2 and the conventional example sample B of the second example are referred to as example sample 5 and conventional example sample E, respectively.

In order to examine the thermal stability of the manufactured magnetic head, a test was carried out in which the magnetic head was placed in a constant temperature bath at 170 ° C. and kept for 20 days with a voltage of 250 mV applied. The output before and after this test was compared. As a result, the magnetic head of Example Sample 5 of the present invention showed a very stable output characteristic with a decrease in output of about 2% or less, whereas the conventional sample E
The output of the magnetic head was about 45%, a very large output reduction. Therefore, the magnetic head of the present invention has greatly improved thermal stability as compared with the conventional magnetic head,
It was found to have excellent durability.

Example 6 A magnetic head (reproducing section) having a yoke structure shown in FIG. 10 was produced. A high permeability Ni-Fe alloy film is used for the yoke portion 302, and the upper shield portion 301
A CuMoNiFe soft magnetic film was used for. Ni-F of the yoke part 302
After forming the e-alloy film and performing CMP polishing, a TMR film was formed in the same manner as in Example 1. First, the free magnetic layer Ni-Fe (5n
m) / Co-F (1 nm) was formed on the yoke portion 302, and then a tunnel insulating layer Al-O (0.6 nm) was formed. Al-O was formed by forming an Al film in the same manner as in Example 1 and then performing natural oxidation. Further, an amorphous magnetic layer Co-Fe-O (0.5 nm) was formed. Co-F
eO was prepared by forming a Co _0.9 -Fe _0.1 film with a thickness of 0.5 nm and then performing natural oxidation for 20 minutes in an oxygen atmosphere of 200 Torr. Co-Fe-Pt (2nm) / Co-Fe (1nm) / Ru (0.8nm) / Co-
Fe (3 nm) is deposited, antiferromagnetic layer Pt-Mn (20 nm) is deposited, and TM
An R film was created. This TMR film protective layer and upper lead 303
After forming the Ta / Pt film as a part of the TMR element, the TMR element was formed by photolithography and ion milling in the same manner as in Example 1 to form Cu as the upper lead 303.
/ Ta was formed. Element size of TMR element part is 1μm × 2μm
The longitudinal direction is set to be the direction perpendicular to the paper surface of FIG. After that, an SiO ₂ insulating layer was formed in order to prevent an electrical short circuit between the TMR element and the upper shield 301, and then the upper shield 301 was prepared to prepare a yoke type magnetic head as shown in FIG.

Thus, the TM which is an embodiment of the present invention
A magnetic head manufactured using the R element is referred to as Example Sample 6. In addition, in the film structure of the TMR element portion of Example Sample 6, there is no amorphous magnetic layer (Co-Fe-O), and the fixed magnetic layer is Co-Fe (3 nm) / Ru (0.8 nm) / Co-Fe ( 3nm) conventional TMR
A magnetic head manufactured by using the element is referred to as a conventional example sample F. Example sample 6 and conventional example sample prepared as described above
The direction of the easy magnetization axis of the fixed magnetic layer should be detected so that the easy magnetization direction of the free magnetic layer of the F magnetic head is perpendicular to the signal magnetic field direction to be detected (perpendicular to the paper surface in FIG. 11). Anisotropy was given to the magnetic film so as to be parallel to the direction (parallel to the line connecting the two yoke portions 301 shown in FIG. 11). This method, after creating the TMR element,
First, heat treatment is performed in a magnetic field of 280 ° C. in a magnetic field of 5 kOe to define the easy direction of the pinned magnetic layer, and then heat treatment is performed in a magnetic field of 500 Oe at 200 ° C. to specify the easy axis of the free magnetic layer. I went.

The track width of the magnetoresistive effect element of the yoke type head produced as described above is 1 μm, and the MR height is 2 μm.
m. To investigate the thermal stability of the manufactured head, 16
A test was conducted in which the sample was placed in a constant temperature bath at 0 ° C. and kept for 50 days with a voltage of 200 mV applied. The output before and after this test was compared. As a result, the inventive sample a0
In the heads using 3, b03, and b05, the output drop was within 1% and showed very stable output characteristics, while the output drop of the head using the conventional sample a01 was about 50%. There was a big decrease in output. Therefore, it was found that the magnetic head of the present embodiment has excellent thermal stability and very good reproduction sensitivity as compared with the conventional magnetic head.

[0089]

INDUSTRIAL APPLICABILITY As described above, the tunnel magnetoresistive effect element of the present invention solves the problem of thermal stability and has stable TMR characteristics even with heat treatment at 400 ° C. It is possible to provide a magnetic head, a magnetic recording device, and a magnetic memory element using the tunnel magnetoresistive effect element of the present invention.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a tunnel magnetoresistive effect element of the present invention.

FIG. 2 is a diagram showing an example of a tunnel magnetoresistive effect element of the present invention.

FIG. 3 is a schematic cross-sectional view of a tunnel magnetoresistive element which is an embodiment of the present invention in which electrodes are arranged above and below the film.

FIG. 4 is a schematic view illustrating a process of manufacturing a tunnel magnetoresistive effect element according to an embodiment of the present invention.

FIG. 5 is a diagram showing an example of a magnetic memory element of the present invention.

FIG. 6 is a diagram showing a basic example of a write operation and a read operation of a magnetic memory element using the tunnel magnetoresistive effect element of the present invention.

FIG. 7 is a diagram showing a basic example of a write operation and a read operation of a magnetic memory element using the tunnel magnetoresistive effect element of the present invention.

FIG. 8 is a diagram of a basic example of a write operation and a read operation of a magnetic memory element using the tunnel magnetoresistive effect element of the present invention.

FIG. 9 is a diagram showing an example of a magnetic head having a shield of the present invention.

FIG. 10 is a diagram showing an example of a magnetic head having a yoke of the present invention.

FIG. 11 is a diagram showing an example of a magnetic recording apparatus of the present invention.

FIG. 12 is a perspective view of a form of a rotary drum device as an example of the magnetic recording device of the present invention.

FIG. 13 is a diagram showing a schematic view of a traveling system in an example of the magnetic recording apparatus of the present invention.

[Explanation of symbols]

10 TMR element 11 Free magnetic layer 12 Fixed magnetic layer 13 Tunnel insulation layer 14 Antiferromagnetic layer 15 Amorphous magnetic layer 21 Non-magnetic layer for exchange coupling 22 Magnetic film 23 Magnetic film

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) C22C 38/00 303 C22C 38/00 303S 45/02 45/02 A 45/04 45/04 B G11B 5 / 39 G11B 5/39 G11C 11/15 112 G11C 11/15 112 H01F 10/13 H01F 10/13 10/16 10/16 10/32 10/32 H01L 27/105 H01L 27/10 447 (72) Inventor Matsukawa No. 1006 Kadoma, Kadoma, Osaka Prefecture Matsuda Denki Sangyo Co., Ltd. (72) Inventor Yoshio Kawashima 1006 Kadoma, Kadoma City Osaka Prefecture, Matsuda Denki Sangyo Co., Ltd. Address F term in Matsushita Electric Industrial Co., Ltd. (reference) 5D034 BA02 BA03 BA04 BA05 CA02 CA08 5E049 AA01 AA04 AA07 AC01 BA12 BA16 5F083 FZ10 GA30 JA05 JA36 JA37 JA38 JA39 JA40 PR01 PR04 PR40 ZA28

Claims (11)

[Claims] 1. A free magnetic layer whose magnetization can be rotated by an external magnetic field, a pinned magnetic layer which can be magnetized by an external magnetic field and is harder to rotate than the free magnetic layer, the free magnetic layer and the pinned layer. In a tunnel magnetoresistive effect element comprising a tunnel insulating layer arranged between a magnetic layer and, between the free magnetic layer and the tunnel insulating layer, between the fixed magnetic layer and the tunnel insulating layer, An amorphous magnetic layer is disposed on at least one side, a part of the amorphous magnetic layer side of the free magnetic layer, or a part of the amorphous magnetic layer side of the fixed magnetic layer, Fe, Co, Ni and alloys thereof. At least 1 selected from Ru, Rh, Pd, Ir, Pt, and Au as the main component
A tunnel magnetoresistive effect element comprising a seed element. 2. The tunnel magnetoresistive element according to claim 1, wherein the tunnel insulating layer is selected from at least one of Al oxide, nitride and oxynitride. 3. The tunnel magnetoresistive effect according to claim 1 or 2, wherein the amorphous magnetic layer is made of an oxide, a nitride or an oxynitride containing at least one selected from Fe, Co and Ni. element. 4. The amorphous magnetic layer contains at least one selected from Fe, Co and Ni, and further includes Ru, Rh, Pd, Ir,
The tunnel magnetoresistive effect element according to claim 1 or 2, which is made of an oxide, a nitride, or an oxynitride containing at least one element selected from Pt and Au. 5. The thickness of the amorphous magnetic layer is 0.5 nm or more 2
The tunnel magnetoresistive effect element according to claim 1, wherein the tunnel magnetoresistive effect element has a thickness of not more than nm. 6. An A-Mn system (where A is Pt, Pd, Ir, Fe, Ru, R) at the interface of the pinned magnetic layer opposite to the tunnel insulating layer.
The tunnel magnetic according to any one of claims 1 to 5, wherein any one element selected from h) is in contact with the antiferromagnetic layer, and the magnetization direction of the pinned magnetic layer is fixed. Resistance effect element. 7. A tunnel magnetoresistive head for detecting a signal magnetic field from a magnetic recording medium, the head being provided in two shield portions containing a magnetic material, and in a gap between the two shield portions. 7. A tunnel magnetoresistive head including the tunnel magnetoresistive element according to any one of 1 to 6. 8. A tunnel magnetoresistive head for detecting a signal magnetic field from a magnetic recording medium, wherein a magnetic flux guide portion including a magnetic material and a signal magnetic field guided by the magnetic flux guide portion are detected. 7. A tunnel magnetoresistive effect head comprising the tunnel magnetoresistive effect element according to any one of items 1 to 6. 9. A magnetic recording device comprising a magnetic recording medium and a magnetic head for scanning the magnetic recording medium, wherein the tunnel magnetoresistive head according to claim 8 is provided. Magnetic recording device. 10. The tunnel magnetoresistive effect element according to claim 1, and an information recording conductor line (word line portion) for generating a magnetic field for causing magnetization reversal of the free magnetic layer. ) Portion and an information reading conductor line (sense line) portion for detecting a resistance change of the tunnel magnetoresistive effect element. 11. A memory device configured by arranging the tunnel magnetoresistive effect memory devices according to claim 10 in a matrix.