JP2003231354A - Optical information recording medium - Google Patents
Optical information recording mediumInfo
- Publication number
- JP2003231354A JP2003231354A JP2002027965A JP2002027965A JP2003231354A JP 2003231354 A JP2003231354 A JP 2003231354A JP 2002027965 A JP2002027965 A JP 2002027965A JP 2002027965 A JP2002027965 A JP 2002027965A JP 2003231354 A JP2003231354 A JP 2003231354A
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- Prior art keywords
- recording medium
- layer
- recording
- optical recording
- alloy
- Prior art date
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- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
(57)【要約】
【課題】 高線速高密度化に対応でき、繰り返し特性と
保存特性に優れた光情報記録媒体(以下、単に記録媒体
ということがある)を提供すること。
【解決手段】 基板上に第一耐熱保護層、記録層、第二
耐熱保護層、反射放熱層、そして環境保護層を少なくと
も備えて層構成をなし、電磁波を照射することにより、
情報の記録、再生、消去を行なう相変化型光記録媒体に
おいて、この記録層が、Gaと、Sbと、Bからなり、
これにAg,Cu,Ge,Sn,Zn,In,Se,
N,Ni,Ti,V,Cr,Mn,Coの中から選ばれ
た少なくとも一つの元素を添加として得られる合金から
なることを特徴とする光記録媒体。
(57) [Problem] To provide an optical information recording medium (hereinafter, sometimes simply referred to as a recording medium) which can cope with high linear velocity and high density and has excellent repetition characteristics and storage characteristics. SOLUTION: A substrate has at least a first heat-resistant protective layer, a recording layer, a second heat-resistant protective layer, a reflective heat-radiating layer, and an environmental protective layer to form a layer structure, and is irradiated with electromagnetic waves,
In a phase-change optical recording medium for recording, reproducing, and erasing information, this recording layer comprises Ga, Sb, and B;
Ag, Cu, Ge, Sn, Zn, In, Se,
An optical recording medium comprising an alloy obtained by adding at least one element selected from N, Ni, Ti, V, Cr, Mn, and Co.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、光情報記録媒体に
関し、さらに詳しくは、光ビームを照射することによ
り、相変化材料からなる記録層に光学的な変化を生じさ
せ、情報の記録、再生又は消去を行なう書換え可能な光
情報記録媒体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording medium, and more specifically, by irradiating a light beam, an optical change is caused in a recording layer made of a phase change material to record and reproduce information. Or, it relates to a rewritable optical information recording medium for erasing.
【0002】[0002]
【従来の技術】光ビーム照射による情報の記録、再生又
は消去が可能な光情報記録媒体の一つとして、結晶−非
結晶相間又は結晶−非結晶相間の転移を利用する、いわ
ゆる相変化型光ディスクが知られている。この光ディス
クは、単一ビームによるオーバライトが可能であり、ド
ライブ側の光学系がより単純で済むため、コンピュータ
関連のハード、映像、音響に関する記録媒体として応用
されている。2. Description of the Related Art As one of optical information recording media capable of recording, reproducing or erasing information by irradiating a light beam, a so-called phase change type optical disk utilizing a transition between a crystalline-amorphous phase or a crystalline-amorphous phase. It has been known. Since this optical disc can be overwritten by a single beam and the optical system on the drive side is simpler, it is applied as a recording medium for computer-related hardware, video, and sound.
【0003】この記録材料としては、GeTe,GeT
eSe,GeTeS,GeSeS,GeSeSb,Ge
AsSe,InTe,SeTe,SeAs,Ge−Te
−(Sn,Au,Pd),GeTeSeSb,GeTe
Sb,Ag−In−Sb−Te等が用いられている。特
に、Ag−In−Sb−Teは、高感度でアモルファス
部分の輪郭が明確であるという特徴を有し、マークエッ
ジ記録用の記録層材料として使用されている(特開平3
−231889号公報、特開平4−191089号公
報、特開平4−232779号公報、特開平4−267
192号公報、特開平5−345478号公報、特開平
6−166266号公報等参照)。また、Sb−Teを
主成分とし、これにAg,In,Ga,Si等を添加し
た記録材料を用い、単一なγ層を有するものが開示され
ている(特開平1−303643号公報)。As the recording material, GeTe, GeT
eSe, GeTeS, GeSeS, GeSeSb, Ge
AsSe, InTe, SeTe, SeAs, Ge-Te
-(Sn, Au, Pd), GeTeSeSb, GeTe
Sb, Ag-In-Sb-Te, etc. are used. In particular, Ag-In-Sb-Te is characterized by having high sensitivity and a clear outline of an amorphous portion, and is used as a recording layer material for mark edge recording (Japanese Patent Laid-Open No. Hei 3).
No. 231889, Japanese Unexamined Patent Publication No. 4-191089, Japanese Unexamined Patent Publication No. 4-232779, and Japanese Unexamined Patent Publication No. 4-267.
192, JP-A-5-345478, JP-A-6-166266, etc.). Further, a recording material containing Sb-Te as a main component and Ag, In, Ga, Si or the like added thereto and having a single γ layer is disclosed (Japanese Patent Laid-Open No. 1-303643). .
【0004】また、IをI族元素、IIIをIII族元素、V
をV族元素、VIをVI族元素として、I・(III1−γV
γ)・VI型の一般組成式で表わされる記録層も提案され
ている(特開平3−231889号公報)。しかしなが
ら、これら記録層では、繰り返し記録特性に問題があっ
た。I is a group I element, III is a group III element, and V
Is a group V element and VI is a group VI element, and I · (III 1-γ V
A recording layer represented by a general composition formula of γ ) · VI type has also been proposed (JP-A-3-231889). However, these recording layers have a problem in repeated recording characteristics.
【0005】特開平4−191089号公報に開示され
た光情報記録媒体に使用されている記録層による場合、
消去比の向上と高速記録とは達成されるものの、繰返し
記録特性に問題があった。さらに、特開平4−2327
79号公報に開示された光情報記録媒体に使用されてい
る記録層のみの記録部分(結晶化部分)の構造は、安定
層(AgSbTe 2)とこの安定層の周囲に存在するア
モルファス相とが混在したものとなっている。このた
め、繰返し記録特性は向上するものの、結晶化部に微細
な結晶粒界が存在することになり、ノイズ発生の原因と
なっている。これは、記録再生波長が780nm程度の
レーザ光を使用するCD−RW(Compact Disk-Rewrita
ble)等のように比較的低い記録密度を有する光情報記
録媒体の記録特性には重大な悪影響を与えないが、波長
680nm以下のレーザ光を使用し、記録密度がCD−
RWの約4倍であるDVD(Digital Versatile Disk)
RAMや、さらに、高密度なDVD−RW等の高密度記
録を実現する上では障害となるものであった。また、繰
返し記録特性においても問題を残しているものであっ
た。Disclosed in Japanese Patent Laid-Open No. 4-191089
When the recording layer used in the optical information recording medium is
Improves erase ratio and achieves high-speed recording, but repeats
There was a problem with the recording characteristics. Furthermore, JP-A-4-2327
Used in the optical information recording medium disclosed in Japanese Patent Publication No. 79
The structure of the recording part (crystallized part) of only the recording layer is stable.
Layer (AgSbTe Two) And the
It is a mixture of Morpheus phases. others
Therefore, the repetitive recording characteristics are improved, but the crystallization part is fine.
Since there are various grain boundaries, it may cause noise.
Has become. This is because the recording / reproducing wavelength is about 780 nm.
CD-RW (Compact Disk-Rewrita) that uses laser light
optical information recording having a relatively low recording density such as
Although it does not have a serious adverse effect on the recording characteristics of the recording medium,
Laser light of 680 nm or less is used, and the recording density is CD-
DVD (Digital Versatile Disk) which is about 4 times as large as RW
RAM and high-density storage such as high-density DVD-RW
It was an obstacle to realizing the recording. In addition,
It also leaves a problem with the return recording characteristics.
It was
【0006】特開平4−267192号公報に使用され
ている記録層の結晶化部分の構造は、一様なアモルファ
ス相から相分離したAgSbTe2とその他の相(安定
層又はアモルファス相)との混相状態である。その他の
相がアモルファス相である場合には、上記した特開平4
−232779号公報に開示された光情報記録媒体の場
合と同様な問題点があり、その他の相が安定結晶相であ
る場合には、後記するように、良好な記録特性が得られ
ないという問題がある。The structure of the crystallized portion of the recording layer used in Japanese Unexamined Patent Publication No. 4-267192 has a mixed phase of AgSbTe 2 phase-separated from a uniform amorphous phase and another phase (stable layer or amorphous phase). It is in a state. When the other phase is an amorphous phase, the above-mentioned Japanese Patent Laid-Open No.
There is a problem similar to the case of the optical information recording medium disclosed in Japanese Patent Laid-Open No. 232779/1990, and when the other phase is a stable crystal phase, good recording characteristics cannot be obtained as described later. There is.
【0007】また、特開平1−303643号公報で開
示された光情報記録媒体では、単一なγ層が得られ、良
好な繰り返し特性が得られたとしているが、このγ層が
どのような結晶構造を有しているかについては言及して
おらず、今後の高線速、高密度対応の記録媒体を実現す
る上で問題を有するものであった。Further, in the optical information recording medium disclosed in Japanese Patent Laid-Open No. 1-303643, a single γ layer is obtained, and good repeating characteristics are obtained. What kind of γ layer does this have? No mention is made as to whether or not it has a crystal structure, and there is a problem in realizing a recording medium compatible with high linear velocity and high density in the future.
【0008】[0008]
【発明が解決しようとする課題】従って、本発明の目的
は、このような従来の問題点を解消し、高線速高密度化
に対応でき、繰り返し特性と保存特性に優れた光情報記
録媒体(以下、単に記録媒体ということがある)を提供
することをその課題とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned conventional problems, to cope with high linear velocity and high density, and to provide an optical information recording medium excellent in repeatability and storage characteristics. It is an object to provide (hereinafter, may be simply referred to as a recording medium).
【0009】[0009]
【課題を解決するための手段】本発明者らは、上記課題
を解決するために、記録層および反射放熱層を構成する
材料に着目し、鋭意研究を重ねた結果、記録材料がGa
と、Sbと、Bからなり、これにAg,Cu,Ge,S
n,Zn,In,Se,N,Ni,Ti,V,Cr,M
n,Coの中から選ばれた少なくとも一つの元素を添加
したものであり、又、反射放熱層用材料がAgを主成分
とし、これにIn,Mg,C,Cu,Ni,Pd,Mo
の中から選ばれた少なくとも一つの元素を添加したもの
であるときに、上記課題が解決できることを見出し、こ
の知見に基づいて本発明を完成するに到った。In order to solve the above problems, the present inventors have focused their attention on the materials constituting the recording layer and the reflection / heat dissipation layer, and as a result of earnest studies, as a result, the recording material was Ga.
, Sb and B, and Ag, Cu, Ge, S
n, Zn, In, Se, N, Ni, Ti, V, Cr, M
At least one element selected from n and Co is added, and the material for the reflective heat dissipation layer contains Ag as a main component, and In, Mg, C, Cu, Ni, Pd, Mo
It was found that the above problem can be solved when at least one element selected from the above is added, and the present invention has been completed based on this finding.
【0010】即ち、上記課題は、本発明の(1)「基板
上に第一耐熱保護層、記録層、第二耐熱保護層、反射放
熱層、そして環境保護層を少なくとも備えて層構成をな
し、電磁波を照射することにより、情報の記録、再生、
消去を行なう相変化型光記録媒体において、この記録層
が、Gaと、Sbと、Bからなり、これにAg,Cu,
Ge,Sn,Zn,In,Se,N,Ni,Ti,V,
Cr,Mn,Coの中から選ばれた少なくとも一つの元
素を添加として得られる合金からなることを特徴とする
光記録媒体」、(2)「前記記録層を構成する合金の組
成式がThat is, the above-mentioned problem is (1) of the present invention, which has a layer structure including at least a first heat-resistant protective layer, a recording layer, a second heat-resistant protective layer, a reflective heat-dissipating layer, and an environmental protective layer on a substrate. , Recording and reproducing information by irradiating electromagnetic waves,
In a phase change type optical recording medium for erasing, this recording layer is composed of Ga, Sb and B, and Ag, Cu,
Ge, Sn, Zn, In, Se, N, Ni, Ti, V,
An optical recording medium comprising an alloy obtained by adding at least one element selected from Cr, Mn, and Co., (2) "The composition formula of the alloy constituting the recording layer is
【0011】[0011]
【数7】GaαSbβBγMδ
(但し、MはAg,Cu,Ge,Sn,Zn,In,S
e,N,Ni,Ti,V,Cr,Mn,Coの中から選
ばれた少なくとも一つの元素でα+β+γ+δ=100
原子%である)で表わされ、α、β、γ、δが、7≦α
≦60、30≦β≦90、0<γ≦10、0<δ≦15
の範囲にあることを特徴とする前記第(1)項に記載の
光記録媒体」、(3)「前記反射放熱層が、Agを主成
分としこれにIn,Mg,C,Cu,Ni,Pd,Mo
の中から選ばれた少なくとも一つの元素を添加して得ら
れる合金から成ることを特徴とする前記第(1)項に記
載の光記録媒体」、(4)「前記反射放熱層の合金がA
gとCuとNiから成り、その組成式が## EQU7 ## GaαSbβBγMδ (where M is Ag, Cu, Ge, Sn, Zn, In, S
at least one element selected from e, N, Ni, Ti, V, Cr, Mn, and Co, and α + β + γ + δ = 100
%, And α, β, γ, δ is 7 ≦ α
≦ 60, 30 ≦ β ≦ 90, 0 <γ ≦ 10, 0 <δ ≦ 15
(3) "The reflective heat dissipation layer contains Ag as a main component, and In, Mg, C, Cu, Ni, Pd, Mo
(4) The optical recording medium according to item (1) above, which comprises an alloy obtained by adding at least one element selected from
It consists of g, Cu and Ni, and its composition formula is
【0012】[0012]
【数8】AgxCuyNiz
(但し、x+y+z=100原子%)で表わされ、x、
y、zが95≦x≦98、1≦y≦3、1≦z≦2の範
囲にあることを特徴とする前記第(3)項に記載の光記
録媒体」、(5)「前記反射放熱層の合金がAgとPd
とMoからなり、その組成式が## EQU8 ## Represented by AgxCuyNiz (where x + y + z = 100 atom%), x,
y and z are in the range of 95≤x≤98, 1≤y≤3, 1≤z≤2, and (5) "the reflection The alloy of the heat dissipation layer is Ag and Pd
And Mo, whose composition formula is
【0013】[0013]
【数9】AgxPdyMoz
(但し、x+y+z=100原子%)で表わされ、x、
y、zが94≦x≦98、1≦y≦3、1≦z≦3の範
囲にあることを特徴とする前記第(3)項に記載の光記
録媒体」、(6)「前記反射放熱層の合金がAgとIn
とMoから成り、その組成式が## EQU9 ## Represented by AgxPdyMoz (where x + y + z = 100 atom%), x,
The optical recording medium according to item (3) above, wherein y and z are in the range of 94 ≦ x ≦ 98, 1 ≦ y ≦ 3, and 1 ≦ z ≦ 3 ”, (6)“ the reflection ” The alloy of the heat dissipation layer is Ag and In
And Mo, whose composition formula is
【0014】[0014]
【数10】AgxInyMoz
(但し、x+y+z=100原子%)で表わされ、x、
y、zが95≦x≦98、1≦y≦2、1≦z≦3の範
囲にあることを特徴とする前記第(3)項に記載の光記
録媒体」、(7)「前記反射放熱層の合金がAgとMg
とNiからなり、その組成式が## EQU10 ## Represented by AgxInyMoz (where x + y + z = 100 atom%), x,
The optical recording medium according to item (3), wherein y and z are in the range of 95 ≦ x ≦ 98, 1 ≦ y ≦ 2, and 1 ≦ z ≦ 3 ”, (7)“ the reflection ” The alloy of the heat dissipation layer is Ag and Mg
And Ni, whose composition formula is
【0015】[0015]
【数11】AgxMgyNiz
(但し、x+y+z=100原子%)で表わされ、x、
y、zが95≦x≦98、0.5≦y≦2、1≦z≦3
の範囲にあることを特徴とする前記第(3)項に記載の
光記録媒体」、(8)「前記反射放熱層の合金がAgと
CとCuからなり、その組成式が## EQU11 ## Represented by AgxMgyNiz (where x + y + z = 100 atom%), x,
y and z are 95 ≦ x ≦ 98, 0.5 ≦ y ≦ 2, 1 ≦ z ≦ 3
The optical recording medium according to item (3), characterized in that it is in the range of (3), (8) "the alloy of the reflective heat dissipation layer is composed of Ag, C and Cu
【0016】[0016]
【数12】AgxCyCuz
(但し、x+y+z=100原子%)で表わされ、x、
y、zが96≦x≦98、0≦y≦1、1≦z≦3の範
囲にあることを特徴とする前記第(3)項に記載の光記
録媒体」により達成される。## EQU12 ## Represented by AgxCyCuz (where x + y + z = 100 atom%), x,
The optical recording medium according to item (3) above, wherein y and z are in the range of 96 ≦ x ≦ 98, 0 ≦ y ≦ 1, 1 ≦ z ≦ 3 ”.
【0017】以下、本発明を詳細に説明する。本発明
は、線速が20m/s以上の高線速において、オーバラ
イトができる繰り返し特性と保存特性に優れた相変化型
光記録媒体を提供することにあり、これを実現するため
に、従来技術に用いられる記録材料よりも高速結晶化が
可能なGaとSbとBを主成分とした記録材料を用いて
いる。GaとSbから成る記録材料としては、化合物組
成であるGaSbが高速結晶化が可能な相変化材料とし
て報告(Applied Optics/Vol.26,No.22/15 November 19
87 P4772-4776)されている。この点が何故高速結晶化
が不可能なのか不明であるが、一つの考え方としてGa
Sbは共有結合性が弱いためと考えられる。一方、結晶
化速度が速いことは、非晶質としての記録マークの安定
性に問題が生じるために、これを解決するために本発明
では、Bを加えている。即ち、Bを加えることにより、
GaSbの結晶化速度を制御し、高速結晶化の機能を保
持しつつ、非晶質の記録マークの安定性を実現した。さ
らに、本発明では、繰り返し特性と再生信号の特性向上
のために、Ag,Cu,Ge,Sn,Zn,In,S
e,N,Ni,Ti,V,Cr,Mn,Coの中から選
ばれた少なくとも一つの元素を添加している。このとき
の組成は、その組成式をThe present invention will be described in detail below. An object of the present invention is to provide a phase change type optical recording medium which is excellent in repetitive characteristics and storage characteristics capable of overwriting at a high linear velocity of 20 m / s or more. A recording material containing Ga, Sb, and B as main components, which can be crystallized at a higher speed than the recording material used in the technology, is used. As a recording material composed of Ga and Sb, the compound composition GaSb is reported as a phase change material capable of high-speed crystallization (Applied Optics / Vol.26, No.22 / 15 November 19
87 P4772-4776). It is unclear why this point makes high-speed crystallization impossible, but one idea is that Ga
It is considered that Sb has weak covalent bondability. On the other hand, a high crystallization rate causes a problem in the stability of the recording mark as an amorphous state. Therefore, in the present invention, B is added to solve the problem. That is, by adding B,
By controlling the crystallization rate of GaSb and maintaining the function of high-speed crystallization, the stability of amorphous recording marks was realized. Furthermore, in the present invention, Ag, Cu, Ge, Sn, Zn, In, S are used to improve the repetitive characteristics and the characteristics of the reproduced signal.
At least one element selected from e, N, Ni, Ti, V, Cr, Mn, and Co is added. The composition at this time is expressed by the composition formula
【0018】[0018]
【数13】GaαSbβBγMδ
但し、MはAg,Cu,Ge,Sn,Zn,In,S
e,N,Ni,Ti,V,Cr,Mn,Coの中から選
ばれた少なくとも一つの元素でα+β+γ+δ=100
原子%で、α、β、γ、δが、7≦α≦60、30≦β
≦90、0<γ≦10、0<δ≦15の範囲にあり、α
が7より少ないと結晶化速度が低下し、高線速対応が困
難となる。また、αが60より少ないと繰り返し特性が
劣下する。βが30より少ないと結晶化速度が低下し、
高線速対応が困難となり、βが90より多いと、非晶質
化が困難となり記録することができなくなる。また、γ
の場合はBが少しでも添加されていれば、記録マークの
安定性が確保され、再生信号の良好なジッターが得られ
るが、1at%より多いことが望ましいが、より好まし
くは2at%以上である。しかし、10より多いと、結
晶化速度が低下し、高線速対応が困難となる。一方、δ
の場合は、これらの元素が少しでも添加されていればオ
ーバライト繰り返し特性及び再生信号特性の向上に効果
があるが、1at%以上の添加が好ましい。又、15よ
り多いと結晶化速度が低下し、高線速対応が困難とな
る。## EQU13 ## GaαSbβBγMδ where M is Ag, Cu, Ge, Sn, Zn, In, S
at least one element selected from e, N, Ni, Ti, V, Cr, Mn, and Co, and α + β + γ + δ = 100
In atomic%, α, β, γ, δ are 7 ≦ α ≦ 60, 30 ≦ β
≦ 90, 0 <γ ≦ 10, 0 <δ ≦ 15, and α
Is less than 7, the crystallization rate is reduced and it becomes difficult to cope with high linear velocity. Further, when α is less than 60, the repeatability is deteriorated. If β is less than 30, the crystallization rate will decrease,
It becomes difficult to cope with high linear velocity, and if β is more than 90, it becomes difficult to amorphize and recording becomes impossible. Also, γ
In this case, if B is added even in a small amount, the stability of the recording mark is ensured and a good jitter of the reproduced signal can be obtained. However, it is desirable that the content is more than 1 at%, but more preferably 2 at%. . However, when it is more than 10, the crystallization rate is lowered and it becomes difficult to cope with high linear velocity. On the other hand, δ
In this case, if any of these elements is added, it is effective in improving the overwrite repetition characteristics and reproduction signal characteristics, but addition of 1 at% or more is preferable. On the other hand, if it is more than 15, the crystallization rate is lowered and it becomes difficult to cope with high linear velocity.
【0019】また、本発明では、反射放熱層にAg合金
を用いている。その理由は、高線速化のもとでもきれい
なマークを記録するために熱伝導率の良好なAgを用
い、さらに耐食性の向上のために、In,Mg,C,C
u,Ni,Pd,Moの中から選ばれた少なくとも一つ
の元素を加えているが、その中でも特に、Ag−Cu−
Ni合金、Ag−Pd−Mo合金、Ag−In−Mo合
金、Ag−Mg−Ni合金、Ag−C−Cu合金が好ま
しい。上記合金は、その組成が請求項5、6、7、8で
限定されているが、In,Mg,C,Cu,Ni,Pd
の元素の場合、その限定された組成範囲より少ないとA
g合金としての耐食性が低下し、大きいと熱伝導率が小
さくなって、記録マークの再生信号特性、特にジッター
が悪くなる。Further, in the present invention, an Ag alloy is used for the reflection / heat dissipation layer. The reason is that Ag having a good thermal conductivity is used to record a clean mark even at a high linear velocity, and In, Mg, C and C are used to improve the corrosion resistance.
At least one element selected from u, Ni, Pd, and Mo is added. Among them, Ag-Cu-
Ni alloys, Ag-Pd-Mo alloys, Ag-In-Mo alloys, Ag-Mg-Ni alloys, Ag-C-Cu alloys are preferable. Although the composition of the above alloy is limited in claims 5, 6, 7 and 8, In, Mg, C, Cu, Ni, Pd
In the case of the element of A, if it is less than the limited composition range, A
Corrosion resistance as a g-alloy decreases, and if it is large, the thermal conductivity becomes small, and the reproduction signal characteristics of the recording mark, particularly the jitter, deteriorates.
【0020】[0020]
【発明の実施の形態】次に、本発明の記録媒体の構成を
図面に基づいて説明する。図1は、本発明の記録媒体の
構成例を示すもので、基板(1)上に下部耐熱保護層
(2)、記録層(3)、上部耐熱保護層(4)、反射放
熱層(5)が設けられている。耐熱保護層は、必ずしも
記録層の両側に設ける必要はないが、基板(1)がポリ
カーボネート樹脂のように耐熱性が低い材料の場合に
は、下部耐熱層を設けることが望ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the structure of the recording medium of the present invention will be described with reference to the drawings. FIG. 1 shows an example of the structure of a recording medium of the present invention, in which a lower heat-resistant protective layer (2), a recording layer (3), an upper heat-resistant protective layer (4), a reflective heat dissipation layer (5) are provided on a substrate (1). ) Is provided. The heat-resistant protective layer does not necessarily have to be provided on both sides of the recording layer, but when the substrate (1) is made of a material having low heat resistance such as polycarbonate resin, it is desirable to provide the lower heat-resistant layer.
【0021】基板(1)の材料は、通常、ガラス、セラ
ミック又は樹脂であり、樹脂基板が成形性、コストの点
から好適である。樹脂の代表例としては、ポリカーボネ
ート樹脂、アクリル樹脂、エポキシ樹脂、ポリスチレン
樹脂、アクリロニトリル−スチレン共重合樹脂、ポリス
チレン樹脂、ポリプロピレン樹脂、シリコーン樹脂、フ
ッ素樹脂、ABS樹脂、ウレタン樹脂等が挙げられる
が、加工性、光学特性等の点からポリカーボネート樹脂
が好ましい。また、基板の形状は、ディスク状、カード
状又はシート状のいずれであってもよい。The material of the substrate (1) is usually glass, ceramic or resin, and a resin substrate is preferable from the viewpoint of moldability and cost. Typical examples of the resin include polycarbonate resin, acrylic resin, epoxy resin, polystyrene resin, acrylonitrile-styrene copolymer resin, polystyrene resin, polypropylene resin, silicone resin, fluorine resin, ABS resin, urethane resin, etc. Polycarbonate resin is preferable from the viewpoints of properties and optical characteristics. The substrate may have a disc shape, a card shape, or a sheet shape.
【0022】耐熱保護層、すなわち誘電体層は、(Zn
S)・(SiO2)を用いてスパッタ法により膜形成を
行なう。この誘電体層は、耐熱保護層としての機能と光
干渉層としての機能を有することから、これらの機能を
最大限に活かすことが必要であり、そのためには、膜厚
を、200〜3000Å、好ましくは、350〜200
0Åとする。200Å未満の場合は、耐熱保護としての
機能が失われ、また、3000Åを越えると界面剥離が
生じやすくなるので好ましくない。The heat-resistant protective layer, that is, the dielectric layer, is made of (Zn
A film is formed by a sputtering method using S). (SiO 2 ). Since this dielectric layer has a function as a heat-resistant protective layer and a function as an optical interference layer, it is necessary to make the most of these functions. For that purpose, the film thickness is 200 to 3000 Å, Preferably 350-200
Set to 0Å. When it is less than 200Å, the function as heat resistance is lost, and when it exceeds 3000Å, interfacial peeling is likely to occur, which is not preferable.
【0023】また、本発明の記録層は、一般的にはスパ
ッタ法により膜形成が行なわれ、その膜厚は、100〜
1000Å、好ましくは、200〜350Åである。1
00Åより薄いと、光吸収能が低下し、記録層としての
機能を失い、100Åより厚いと、透過光が少なくなる
ため、干渉効果が期待できなくなる。本発明の反射放熱
層はAg合金が用いられ、その膜形成は、スパッタ法に
より行なうことができる。膜厚は、500〜2000
Å、好ましくは、700〜1500Åである。The recording layer of the present invention is generally formed by a sputtering method, and the film thickness is 100 to 100.
It is 1000Å, preferably 200 to 350Å. 1
If it is thinner than 00Å, the light absorption ability is lowered and the function as a recording layer is lost. An Ag alloy is used for the reflection and heat dissipation layer of the present invention, and its film can be formed by a sputtering method. The film thickness is 500-2000
Å, preferably 700 to 1500Å.
【0024】[0024]
【実施例】以下、実施例を挙げて本発明をさらに詳しく
説明するが、これら実施例によって、本発明はなんら限
定されものではない。The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.
【0025】トラックピッチ0.7μm、溝深さ400
Å、厚さ0.6mm、直径120mmφのポリカーボネ
ート基板上に、表1に示す構造の記録媒体を作製するた
めに、下部耐熱保護層、記録層、上部耐熱保護層、反射
放熱層をスパッタ法により順次設けた。さらに反射放熱
層の上には、スピンコート法により環境保護層を設け
た。次に、得られた記録媒体を初期結晶化した後に、記
録線速、記録パワーを20m/s(18mw)、23m
/s(20mw)、25m/s(22mw)とした。こ
のときの記録用レーザの波長は650nmとし、EFM
ランダムパターンでオーバライトの繰り返しを行ない、
その信号特性の評価は3T信号のジッター値で行ない、
保存特性は3000回オーバライト記録した記録媒体を
80℃、85%温湿下で300時間保持した後の初期記
録(オーバライト1回目)の3T信号ジッター値で評価
した。その結果を表2、3に示す。Track pitch 0.7 μm, groove depth 400
Å, a lower heat-resistant protective layer, a recording layer, an upper heat-resistant protective layer, and a reflective heat dissipation layer were formed by a sputtering method on a polycarbonate substrate having a thickness of 0.6 mm and a diameter of 120 mmφ in order to produce a recording medium having the structure shown in Table 1. It was set up sequentially. Further, an environmental protection layer was provided on the reflection / heat dissipation layer by spin coating. Next, after initial crystallization of the obtained recording medium, the recording linear velocity and recording power were set to 20 m / s (18 mw) and 23 m.
/ S (20 mw) and 25 m / s (22 mw). The wavelength of the recording laser at this time is 650 nm, and the EFM
Repeat the overwrite with a random pattern,
The signal characteristic is evaluated by the jitter value of the 3T signal,
The storage characteristics were evaluated by the 3T signal jitter value of the initial recording (first overwrite) after holding the recording medium overwritten 3000 times at 80 ° C. under 85% humidity for 300 hours. The results are shown in Tables 2 and 3.
【0026】[0026]
【表1−1】 [Table 1-1]
【0027】[0027]
【表1−2】 [Table 1-2]
【0028】[0028]
【表2−1】
注)3000回オーバライト後の記録媒体を80℃、8
5%温湿下で300時間保持した後のオーバーライト1
回目の3T信号のジッター値で評価した。[Table 2-1] Note) The recording medium after overwriting 3000 times, at 80 ℃, 8
Overwrite 1 after holding at 5% humidity for 300 hours
The jitter value of the third 3T signal was evaluated.
【0029】[0029]
【表2−2】
注)3000回オーバライト後の記録媒体を80℃、8
5%温湿下で300時間保持した後のオーバーライト1
回目の3T信号のジッター値で評価した。[Table 2-2] Note) The recording medium after overwriting 3000 times, at 80 ℃, 8
Overwrite 1 after holding at 5% humidity for 300 hours
The jitter value of the third 3T signal was evaluated.
【0030】[0030]
【表3−1】
注)3000回オーバライト後の記録媒体を80℃、8
5%温湿下で300時間保持した後のオーバーライト1
回目の3T信号のジッター値で評価した。[Table 3-1] Note) The recording medium after overwriting 3000 times, at 80 ℃, 8
Overwrite 1 after holding at 5% humidity for 300 hours
The jitter value of the third 3T signal was evaluated.
【0031】[0031]
【表3−2】
注)3000回オーバライト後の記録媒体を80℃、8
5%温湿下で300時間保持した後のオーバーライト1
回目の3T信号のジッター値で評価した。[Table 3-2] Note) The recording medium after overwriting 3000 times, at 80 ℃, 8
Overwrite 1 after holding at 5% humidity for 300 hours
The jitter value of the third 3T signal was evaluated.
【0032】表2、3から明らかなように、本発明の記
録材料及び反射放熱材料を用いて構成された記録媒体
(実施例1〜14)は、20m/s、23m/s、25
m/sの線速でジッターとオーバライトの繰り返し特性
が良好で保存特性も優れていることがわかる。比較例と
して、記録材料がGa12Sb88、Ga50Sb50
を用いた場合、比較例1、2は、高線速下での記録は可
能であるが、オーバライト繰り返し特性と記録マークの
安定性に影響されるジッターが悪い。又、本発明の記録
材料を用いて反射放熱層材料をAgとしたときの比較例
3、4は、ジッターとオーバライト繰り返し特性は良好
であるが、Agの耐候性が悪いために保存特性がもたな
いことを示している。As is clear from Tables 2 and 3, the recording mediums (Examples 1 to 14) constituted by using the recording material and the reflection / heat dissipation material of the present invention were 20 m / s, 23 m / s, 25.
It can be seen that at a linear velocity of m / s, the repeating characteristics of jitter and overwrite are good, and the storage characteristics are also excellent. As comparative examples, the recording materials are Ga 12 Sb 88 , Ga 50 Sb 50.
When Comparative Example 1 and 2 are used, the recording can be performed at a high linear velocity, but the jitter which is influenced by the overwrite repetitive characteristic and the stability of the recording mark is bad. Further, in Comparative Examples 3 and 4 in which the reflective heat dissipation layer material was Ag using the recording material of the present invention, the jitter and overwrite repetition characteristics were good, but the storage resistance was poor due to the poor weather resistance of Ag. It shows that it does not have.
【0033】[0033]
【発明の効果】以上、詳細かつ具体的な説明から明らか
なように、本発明により20m/s以上の高線速に対応
でき、繰り返し特性と保存特性に優れた相変化型の光情
報記録媒体が提供され、光情報記録分野に寄与できると
いう極めて優れた効果を奏するものである。As is apparent from the detailed and specific description above, the present invention can cope with a high linear velocity of 20 m / s or more, and is a phase change type optical information recording medium excellent in repeatability and storage characteristics. Is provided, which has an extremely excellent effect of contributing to the field of optical information recording.
【図1】本発明の光情報記録媒体の構成を示す断面図で
ある。FIG. 1 is a sectional view showing a configuration of an optical information recording medium of the present invention.
1 基板 2 下部耐熱保護層 3 記録層 4 下部耐熱保護層 5 反射放熱層 1 substrate 2 Lower heat-resistant protective layer 3 recording layers 4 Lower heat-resistant protective layer 5 Reflective heat dissipation layer
フロントページの続き (72)発明者 田代 浩子 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 (72)発明者 水谷 未来 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 (72)発明者 出口 浩司 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 Fターム(参考) 2H111 EA03 EA04 EA12 EA23 EA32 EA40 EA41 FA12 FA14 FA18 FA23 FB04 FB05 FB06 FB08 FB09 FB15 FB16 FB17 FB19 FB20 FB21 FB23 FB29 FB30 5D029 JA01 MA13 Continued front page (72) Inventor Hiroko Tashiro 1-3-3 Nakamagome, Ota-ku, Tokyo Stocks Company Ricoh (72) Inventor Mizutani Mirai 1-3-3 Nakamagome, Ota-ku, Tokyo Stocks Company Ricoh (72) Inventor Koji Deguchi 1-3-3 Nakamagome, Ota-ku, Tokyo Stocks Company Ricoh F-term (reference) 2H111 EA03 EA04 EA12 EA23 EA32 EA40 EA41 FA12 FA14 FA18 FA23 FB04 FB05 FB06 FB08 FB09 FB15 FB16 FB17 FB19 FB20 FB21 FB23 FB29 FB30 5D029 JA01 MA13
Claims (8)
耐熱保護層、反射放熱層、そして環境保護層を少なくと
も備えて層構成をなし、電磁波を照射することにより、
情報の記録、再生、消去を行なう相変化型光記録媒体に
おいて、この記録層が、Gaと、Sbと、Bからなり、
これにAg,Cu,Ge,Sn,Zn,In,Se,
N,Ni,Ti,V,Cr,Mn,Coの中から選ばれ
た少なくとも一つの元素を添加として得られる合金から
なることを特徴とする光記録媒体。1. A layer structure comprising at least a first heat-resistant protective layer, a recording layer, a second heat-resistant protective layer, a reflective heat-dissipating layer, and an environmental protective layer on a substrate, and irradiating with an electromagnetic wave,
In a phase change type optical recording medium for recording, reproducing and erasing information, this recording layer is composed of Ga, Sb and B,
Ag, Cu, Ge, Sn, Zn, In, Se,
An optical recording medium comprising an alloy obtained by adding at least one element selected from N, Ni, Ti, V, Cr, Mn and Co.
e,N,Ni,Ti,V,Cr,Mn,Coの中から選
ばれた少なくとも一つの元素でα+β+γ+δ=100
原子%である)で表わされ、α、β、γ、δが、7≦α
≦60、30≦β≦90、0<γ≦10、0<δ≦15
の範囲にあることを特徴とする請求項1に記載の光記録
媒体。2. The composition formula of the alloy forming the recording layer is as follows: GaαSbβBγMδ (where M is Ag, Cu, Ge, Sn, Zn, In, S
at least one element selected from e, N, Ni, Ti, V, Cr, Mn, and Co, and α + β + γ + δ = 100
%, And α, β, γ, δ is 7 ≦ α
≦ 60, 30 ≦ β ≦ 90, 0 <γ ≦ 10, 0 <δ ≦ 15
The optical recording medium according to claim 1, wherein the optical recording medium is in the range of 1.
れにIn,Mg,C,Cu,Ni,Pd,Moの中から
選ばれた少なくとも一つの元素を添加して得られる合金
から成ることを特徴とする請求項1に記載の光記録媒
体。3. The reflection heat dissipation layer is made of an alloy containing Ag as a main component and at least one element selected from In, Mg, C, Cu, Ni, Pd, and Mo added thereto. The optical recording medium according to claim 1, wherein:
iから成り、その組成式が 【数2】AgxCuyNiz (但し、x+y+z=100原子%)で表わされ、x、
y、zが95≦x≦98、1≦y≦3、1≦z≦2の範
囲にあることを特徴とする請求項3に記載の光記録媒
体。4. The alloy of the reflection and heat dissipation layer is Ag, Cu and N.
The composition formula is represented by AgxCuyNiz (where x + y + z = 100 atomic%), and x,
The optical recording medium according to claim 3, wherein y and z are in the range of 95≤x≤98, 1≤y≤3, and 1≤z≤2.
oからなり、その組成式が 【数3】AgxPdyMoz (但し、x+y+z=100原子%)で表わされ、x、
y、zが94≦x≦98、1≦y≦3、1≦z≦3の範
囲にあることを特徴とする請求項3に記載の光記録媒
体。5. The alloy of the reflection and heat dissipation layer is Ag, Pd and M.
and the composition formula is represented by AgxPdyMoz (where x + y + z = 100 atomic%), and x,
The optical recording medium according to claim 3, wherein y and z are in the range of 94≤x≤98, 1≤y≤3, and 1≤z≤3.
oから成り、その組成式が 【数4】AgxInyMoz (但し、x+y+z=100原子%)で表わされ、x、
y、zが95≦x≦98、1≦y≦2、1≦z≦3の範
囲にあることを特徴とする請求項3に記載の光記録媒
体。6. The alloy of the reflection and heat dissipation layer is Ag, In and M.
The composition formula is represented by AgxInyMoz (where x + y + z = 100 atomic%), and x,
The optical recording medium according to claim 3, wherein y and z are in the range of 95≤x≤98, 1≤y≤2, and 1≤z≤3.
iからなり、その組成式が 【数5】AgxMgyNiz (但し、x+y+z=100原子%)で表わされ、x、
y、zが95≦x≦98、0.5≦y≦2、1≦z≦3
の範囲にあることを特徴とする請求項3に記載の光記録
媒体。7. The alloy of the reflection and heat dissipation layer is Ag, Mg and N.
i, the composition formula of which is represented by AgxMgyNiz (where x + y + z = 100 atom%), and x,
y and z are 95 ≦ x ≦ 98, 0.5 ≦ y ≦ 2, 1 ≦ z ≦ 3
The optical recording medium according to claim 3, wherein the optical recording medium is in the range of.
からなり、その組成式が 【数6】AgxCyCuz (但し、x+y+z=100原子%)で表わされ、x、
y、zが96≦x≦98、0≦y≦1、1≦z≦3の範
囲にあることを特徴とする請求項3に記載の光記録媒
体。8. The alloy of the reflection and heat dissipation layer is Ag, C and Cu.
And its composition formula is represented by AgxCyCuz (where x + y + z = 100 atom%), and x,
The optical recording medium according to claim 3, wherein y and z are in the range of 96≤x≤98, 0≤y≤1, and 1≤z≤3.
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|---|---|---|---|
| JP2002027965A JP2003231354A (en) | 2002-02-05 | 2002-02-05 | Optical information recording medium |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027965A JP2003231354A (en) | 2002-02-05 | 2002-02-05 | Optical information recording medium |
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|---|---|
| JP2003231354A true JP2003231354A (en) | 2003-08-19 |
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| WO2005044576A1 (en) | 2003-11-05 | 2005-05-19 | Ricoh Company, Ltd. | Optical recording medium, process for producing the same, sputtering target, method of using optical recording medium and optical recording apparatus |
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| US7242657B2 (en) | 2002-12-27 | 2007-07-10 | Ricoh Company, Ltd. | Phase change type optical recording medium and recording method therefor |
| EP1434206A3 (en) * | 2002-12-27 | 2005-11-23 | Ricoh Company, Ltd. | Phase change type optical recording medium and recording method therefor |
| US7081289B2 (en) | 2003-03-24 | 2006-07-25 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material and information recording medium |
| US7105217B2 (en) | 2003-04-30 | 2006-09-12 | Mitsubishi Chemical Corporation | Phase-change recording material and information recording medium |
| WO2005037566A1 (en) * | 2003-10-16 | 2005-04-28 | Ricoh Company, Ltd. | Phase transition type optical recording medium, process for producing the same, sputtering target, method of using optical recording medium and optical recording apparatus |
| WO2005044576A1 (en) | 2003-11-05 | 2005-05-19 | Ricoh Company, Ltd. | Optical recording medium, process for producing the same, sputtering target, method of using optical recording medium and optical recording apparatus |
| EP1690693A4 (en) * | 2003-11-26 | 2008-09-17 | Ricoh Kk | Optical recording medium |
| US7485357B2 (en) | 2003-11-26 | 2009-02-03 | Ricoh Company, Ltd. | Optical recording medium |
| WO2005051672A1 (en) * | 2003-11-26 | 2005-06-09 | Ricoh Company, Ltd. | Optical recording medium |
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