JP2003209118A - Active matrix organic electroluminescent display device and method of manufacturing the same - Google Patents

Abstract

(57) [Summary] TF of drive section for driving organic EL element
T and / or T of the drive IC connected to the driving unit.
Provided is an active matrix organic electroluminescent display device in which an FT is manufactured by an SLS method so as to enhance uniformity of TFT characteristics and have uniform brightness. SOLUTION: Scan lines arranged in one direction on a substrate, data lines arranged in a direction perpendicular to the scan lines, and data lines arranged at a fixed distance from each other and arranged in a direction parallel to the data lines. Power line and
An electroluminescent element formed in a pixel region between a scan line, a data line and a power line and emitting light according to an applied voltage; a switching transistor for switching a signal of the data line according to a signal of a scan line; and a switching transistor. A drive transistor for applying a power supply of the power line to the electroluminescent element according to a signal applied through
Switching transistor or drive transistor is SL
It is characterized by being formed by the S method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix organic light emitting display device, and more particularly to an SL.
An active matrix organic light emitting display device having higher brightness uniformity than that of the existing low temperature polysilicon process using the S (Sequential lateral solidification) method, and capable of highly integrated integrated circuits (ICs), and its manufacture. Regarding the method.

[0002]

2. Description of the Related Art In recent years, with the development of flat panel displays, liquid crystal display devices (LCD) and plasma display panels (P
Various types of display elements such as DP), field emission display (FED), electroluminescence (EL) have been developed. The flat panel display is classified into the following two types according to its driving method. One is a passive matrix system and the other is an active matrix system. The passive matrix method requires a larger current level than the active matrix method. Therefore, FED and EL
In the current driving method such as the above, the active matrix method is considered to be more advantageous than the passive matrix method which requires a larger current level even in the same line time.

FIG. 1 is an equivalent circuit diagram of a unit pixel of a conventional two-transistor (2T) type active matrix organic electroluminescent display device (OED). As shown in FIG. 1, a circuit configuration of a unit pixel of a conventional active matrix organic light emitting display device includes a scan line 1 arranged in one direction and a data line 2 arranged in a direction perpendicular to the scan line 1. A power line 3 having a certain distance from the data line 2 and arranged in a direction parallel to the data line 2, the scan line 1, the data line 2 and the power line 3.
An electroluminescent device 7 which emits light according to an applied voltage, a switching transistor 4 which switches a signal of the data line 2 according to a signal of the scan line 1, and a switching transistor 4 which are formed in a pixel region between A drive transistor 5 for applying a power source of the power line 3 to the electroluminescent device according to a signal applied via the capacitor, a capacitor 6 formed between the power line 3 and a gate electrode of the drive transistor 5, and the like. ing.

The structure and manufacturing method of the unit pixel of the conventional active matrix organic light emitting display device having the above circuit structure are as follows.

FIG. 2 is a layout view of the active matrix organic light emitting display device of FIG. 1, and FIG. 3 is a cross-sectional view taken along the line II 'of FIG. Board 10
Island-shaped first and second semiconductor layers 4a and 5a are formed in the upper region where the switching transistor 4 and the driving transistor 5 are formed. At this time, the method of forming each of the semiconductor layers 4a and 5a is as follows.
-Si: H) is deposited, and the amorphous silicon is crystallized into polysilicon by a scanning method using an excimer laser, and then selectively removed to remove the first and second semiconductor layers 4a,
5a is formed.

A substrate 10 including the semiconductor layers 4a and 5a
A gate insulating film 30 is formed on the entire surface of the. Next, the scan line 1 is formed in one direction on the gate insulating film 30 so as to pass through the first semiconductor layer 4a, and the gate electrode 5b of the driving transistor is formed so as to pass through the second semiconductor layer 5a. It At this time, the scan line 1 and the gate electrode 5b of the driving transistor are formed so as to be separated from each other, and the gate electrode 5b overlaps with a power line 3 to be formed later to form a certain area so as to form a capacitor. Widely formed.

Source and drain regions are formed in the first and second semiconductor layers on both sides of the scan line 1 and the gate electrode 5b of the driving transistor by implanting impurity ions. Therefore, the scan line 1 and the first semiconductor layer 4a form the switching transistor 4, and the gate electrode 5b and the second semiconductor layer 5a form the driving transistor 5.

The scan line 1 and the gate electrode 5b
An interlayer insulating film 50 is formed on the entire surface including the source and drain regions and the gate electrode 5 of the first semiconductor layer 4a.
b, contact holes are formed in the source regions of the second semiconductor layer 5a. Further, the data line 2 is formed on the interlayer insulating layer 50 so as to be connected to the source region of the first semiconductor layer 4a in a direction perpendicular to the scan line 1.
Is formed, is connected to the source region of the second semiconductor layer 5a in a direction perpendicular to the scan line 1, and is overlapped with the gate electrode 5b.
Is formed, and an electrode pattern 20 is formed to connect the drain region of the first semiconductor layer 4a and the gate electrode 5b. Here, a capacitor 6 is formed at a portion where the gate electrode 5b and the power line 3 overlap each other.

An insulating film 70 for planarization is formed on the entire surface of the substrate 10, and a contact hole is formed in the drain region of the second semiconductor layer 5a on the insulating film 70 for planarization and is connected to the drain region. Thus, the electroluminescent element 7 is formed. A method of manufacturing a conventional active matrix organic light emitting display device having such a structure will be described below.

Amorphous silicon (a-Si:
H) is vapor-deposited, the amorphous silicon is crystallized from polysilicon by using an excimer laser, and then selectively removed to form island-shaped first and second regions in a region where the switching transistor 4 and the driving transistor 5 are formed. Second semiconductor layer 4
a and 5a are formed. At this time, a method of scanning the amorphous silicon with an excimer laser to crystallize polysilicon will be specifically described as follows.

FIG. 4 is a plan view for explaining a conventional crystallization method using a laser annealing method (scanning method). That is, a laser beam having a width of about 0.5 mm or less and having a length smaller than that of the liquid crystal display panel is 25 μm / pulses vertically from one side of the panel.
e Move and irradiate the amorphous silicon by the scanning method to crystallize the polysilicon.

A substrate 10 including the semiconductor layers 4a and 5a
A gate insulating film 30 is formed on the entire surface of and the metal layer is deposited on the entire surface. Then, the metal layer is selectively removed, and the scan line 1 is formed on the gate insulating film 30 in one direction so as to pass through the first semiconductor layer 4a. At the same time, the scan line 1 is formed.
The gate electrode 5b of the drive transistor is formed so as to pass through the semiconductor layer 5a. At this time, the scan line 1
And the gate electrode 5b of the driving transistor are formed so as to be isolated from each other, and the gate electrode 5b overlaps the power line 3 which will be formed later to form a certain region so as to form a capacitor.

The first and second portions using the scan line 1 and the gate electrode 5b of the driving transistor as a mask.
Impurities (P +) are ion-implanted into the semiconductor layers 4a and 5a to form the source and drain regions of the switching transistor and the driving transistor. Therefore, the scan line 1 and the first semiconductor layer 4a form the switching transistor 4, and the gate electrode 5b and the second semiconductor layer 5a form the driving transistor 5.

The scan line 1 and the gate electrode 5b
An interlayer insulating film 50 is deposited on the entire surface including the source and drain regions of the first semiconductor layer 4a and the gate electrode 5b,
The interlayer insulating layer 50 and the gate insulating layer 30 are selectively removed so that the source region of the second semiconductor layer 5a is exposed to form contact holes. Then, a metal layer is vapor-deposited on the entire surface and selectively removed, and the first layer is formed on the interlayer insulating film 50 in a direction perpendicular to the scan line 1.
The data line 2 is formed to be connected to the source region of the semiconductor layer 4a, and at the same time, is connected to the source region of the second semiconductor layer 5a in a direction perpendicular to the scan line 1 and overlaps with the gate electrode 5b. The power line 3 is formed as described above, and the electrode pattern 20 is formed so as to connect the drain region of the first semiconductor layer 4a and the gate electrode 5b.

A flattening insulating film 70 is formed on the entire surface, and a contact hole is formed in the drain region of the second semiconductor layer 5a on the flattening insulating film 70 so as to be connected to the drain region. The electroluminescent element 7 is formed.

[0016]

However, the conventional active matrix organic electroluminescent display device and the manufacturing method thereof have the following problems.

FIG. 5 shows a grain boundary and carrier migration diagram of polysilicon by a conventional scanning crystallization method. That is, since amorphous silicon is crystallized using an excimer laser to form the first and second semiconductor layers, grain boundaries are irregularly formed in a direction perpendicular to the channel direction.
Therefore, the operating voltage of each transistor becomes non-uniform, and a waveform phenomenon occurs on the screen. That is, amorphous silicon is deposited on a substrate, and the amorphous silicon is crystallized by a scanning method using an excimer laser to obtain polysilicon. At this time, since hydrogen (H) is bonded to the amorphous silicon in a predetermined percentage, the hydrogen should be removed and the silicon should be crystallized while maintaining a minimum temperature so as not to deform the substrate. Therefore, it is not easy to realize the process conditions.

Further, since the scanning method using the laser is a method of applying a predetermined pulse per scanning line, the laser is not continuously irradiated, and
Since the energy of the laser irradiated for each line is not uniform, a waveform is formed in the scanning direction. Therefore, the TF per scanning line is increased by the waveform.
The characteristic of T becomes non-uniform and is reflected in the waveform of the display screen of the organic electroluminescent device, which affects the non-uniformity of brightness. That is, since the size and the crystalline state of the Si grains forming the semiconductor layer which functions as a channel of the current path become non-uniform, the characteristics of the TFT driving each pixel change, and the same gray level is applied. Also, the magnitude of the current flowing through each TFT changes, which causes a difference in the brightness of the pixel.

Further, the grain size of Si is not constant, and the protrusions at the grain boundary surface cause non-uniformity in characteristics when manufacturing a thin film transistor (TFT), resulting in non-uniform brightness.

There is a compensation circuit technology that uses four TFTs in a pixel portion in order to compensate the nonuniformity of the brightness in a circuit manner. However, this technology increases the defective rate in the manufacturing process, and the TFT However, there is a disadvantage that the aperture ratio decreases with increasing.

Therefore, the present invention has been made in view of the above problems, and is a TFT of a drive unit for driving an organic electroluminescence (EL) element and / or a drive connected to the drive unit. S of TFT of integrated circuit (IC)
An object of the present invention is to provide an active matrix organic light emitting display device manufactured by the LS (Sequential Lateral Solidification) method to improve the uniformity of the characteristics of the TFT and realize uniform brightness.

Another advantage of the present invention is that the TFT of the driver IC (external drive circuit) is manufactured by the SLS method, and the pixels and the drive circuit are integrated on one substrate with higher density to reduce the size. To provide an active matrix organic light emitting display device.

[0023]

To achieve the above object, an active matrix organic light emitting display device according to the present invention comprises a scan line arranged in one direction on a substrate and a direction perpendicular to the scan line. Formed in a pixel area between the scan line, the data line and the power line, and the power line arranged in a direction parallel to the data line and having a certain distance from the data line, The electroluminescent element that emits light according to the applied voltage, the switching transistor that switches the signal of the data line according to the signal of the scan line, and the power source of the power line according to the signal that is applied through the switching transistor. And a drive transistor for applying Packaging transistor or the driving transistor, characterized in that it is formed by the SLS method.

An active matrix organic light emitting display device according to the present invention comprises a plurality of scan lines to which scan signals are sequentially applied on a substrate, and a plurality of data lines arranged to intersect the scan lines and applying data signals. Each pixel area defined by each scan line and data line, an organic EL element formed in a part of each pixel area, and the scan line and data line in another part of each pixel area. A driving unit connected to the organic EL element and driving the organic EL element, and applying the scan signal and the data signal to the scan line and the data line, respectively.
It is characterized by comprising a gate drive IC and a data drive IC formed by using the SLS method.

In order to achieve the above-mentioned object, a method of manufacturing an active matrix organic light emitting display device according to the present invention comprises depositing amorphous silicon on a substrate and performing SL.
A step of crystallizing the amorphous silicon with polysilicon by the S method, and selectively removing the crystallized polysilicon to form first and second semiconductor layers in a region where a switching transistor and a driving transistor are formed. Forming a gate insulating film on the entire surface including each semiconductor layer, forming a scan line in one direction on the gate insulating film so as to pass through the first semiconductor layer, and simultaneously forming the second semiconductor. Forming a gate electrode of the driving transistor so as to pass through the layer, and forming source and drain regions of the switching transistor and the driving transistor in the first and second semiconductor layers on both sides of the scan line and the gate electrode of the driving transistor. And depositing an interlayer insulating film on the entire surface, and forming the source and drain regions of the first semiconductor layer and the driving transistor. Forming contact holes to expose the gate electrode and the source region of the second semiconductor layer, and connecting the source region of the first semiconductor layer in a direction perpendicular to the scan line on the interlayer insulating film. The data line is formed, and at the same time, the power line is formed to be connected to the source region of the second semiconductor layer in a direction perpendicular to the scan line and overlap the gate electrode of the driving transistor. Forming an electrode pattern so as to connect the drain region of the first semiconductor layer and the gate electrode of the driving transistor;
Forming a planarization insulating film on the entire surface of the second semiconductor layer so as to have a contact hole in the drain region; and forming an electroluminescent device on the planarization insulating film so as to be connected to the drain region. And a step of performing.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of an active matrix organic electroluminescent display device according to the present invention will be described in detail with reference to the drawings.

First, an equivalent circuit and layout of a unit pixel of the active matrix organic light emitting display device according to the present invention is as shown in FIGS. That is, as shown in FIG. 1, the circuit configuration of the unit pixel of the active matrix organic light emitting display device according to the present invention is as follows. The scan lines 1 are arranged in one direction and the scan lines 1 are arranged in a direction perpendicular to the scan lines 1. Pixel between the scan line 1, the data line 2 and the power line 3, and the power line 3 arranged in parallel with the data line 2 at a constant interval from the data line 2. An electroluminescent device 7 formed in the region to emit light according to an applied voltage; a switching transistor 4 for switching a signal of the data line 2 according to a signal of the scan line 1;
A drive transistor 5 for applying the power source of the power line 3 to the electroluminescent device according to a signal applied through the switching transistor 4, and the power line 3
And a gate electrode of the driving transistor 5 and the like.

In the present invention, a pixel portion having a plurality of unit pixels arranged as shown in FIGS. 1 to 3 and a gate driver IC and a data driver IC for driving them are arranged on the same substrate. In addition to the thin film transistors in the pixel section, the thin film transistors in each driver IC are manufactured by the SLS method so that the thin film transistors have uniform characteristics.

FIG. 6 shows an active matrix organic light emitting display device according to a first embodiment of the present invention,
This shows that the TFT of the pixel portion is formed by using the LS method. In the example shown in FIG. 6, a pixel unit PS is formed on a substrate, and a gate drive IC (GIC) and a data drive IC (DIC) in which a drive circuit for driving the pixel unit PS is integrated are provided outside the substrate. It was formed in. Therefore, the active layer of the thin film transistor in the pixel portion is crystallized by the SLS method, and the gate drive I
The active layers of C and the TFT of the data drive IC were formed by a low temperature polysilicon (LTPS) low temperature process and an excimer laser method.

FIG. 7 shows an active matrix organic light emitting display device according to a second embodiment of the present invention, in which a pixel portion and a TFT of a drive IC for driving the pixel portion are formed by an SLS method.

As shown in FIG. 7, when the pixel portion, the gate and the data drive IC are formed on the same substrate,
The pixel portion and the semiconductor layer of the TFT of each drive IC are crystallized by the SLS method. Of course, even in the case of FIG. 7, the semiconductor layer of the thin film transistor in the pixel portion may be formed by the LTPS low temperature process and the excimer laser method (scanning method), and the semiconductor layer of the TFT of each drive IC may be formed by the SLS method. good.

In each of the embodiments of the present invention, the SLS method is SLS high throughput polysilicon, SLS directional polysilicon, SLS x-Si (crystal).
-Si).

Therefore, the method of manufacturing the thin film transistor of the active matrix organic light emitting display device of the present invention will be described in detail below. As shown in FIGS. 2 and 3, island-shaped first and second semiconductor layers 4a and 5a are formed on the substrate 10 in the regions where the thin film transistors 4 and 5 are formed. At this time, as a method of forming the semiconductor layers 4a and 5a, amorphous silicon (a-Si: H) is vapor-deposited on the entire surface, and the amorphous silicon is crystallized with polysilicon by a scanning method using an excimer laser. And then selectively removed to form the first and second semiconductor layers 4
a and 5a are formed.

Substrate 10 including the semiconductor layers 4a and 5a
A gate insulating film 30 is formed on the entire surface of the. A scan line 1 is formed on the gate insulating film 30 so as to pass through the first semiconductor layer 4a in one direction, and a gate electrode 5b of the driving transistor is formed so as to pass through the second semiconductor layer 5a. . At this time, the scan line 1 and the gate electrode 5b of the driving transistor are formed to be separated from each other, and the gate electrode 5b overlaps with a power line 3 to be formed later to form a certain area so as to form a capacitor. Widely formed.

Source and drain regions are formed in the first and second semiconductor layers on both sides of the scan line 1 and the gate electrode 5b of the driving transistor by ion implantation of impurities. Therefore, the first scan line 1
The first semiconductor layer 4a forms the switching transistor 4, and the gate electrode 5b and the second semiconductor layer 5a form the driving transistor 5.

The scan line 1 and the gate electrode 5b
An interlayer insulating film 50 is formed on the entire surface including the source and drain regions and the gate electrode 5 of the first semiconductor layer 4a.
b, contact holes are formed in the source regions of the second semiconductor layer 5a. The data line 2 is formed on the interlayer insulating film 50 so as to be connected to the source region of the first semiconductor layer 4a in a direction perpendicular to the scan line 1.
Is formed, is connected to a source region of the second semiconductor layer 5a in a direction perpendicular to the scan line 1, and a power line 3 is formed so as to overlap the gate electrode 5b. An electrode pattern 20 is formed to connect the drain region and the gate electrode 5b. Here, the capacitor 6 is formed at a portion where the gate electrode 5b and the power line 3 overlap. A planarization insulating film 70 is formed on the entire surface, a contact hole is formed in the drain region of the second semiconductor layer 5a on the planarization insulating film 70, and the electroluminescent device 7 is connected to the drain region. Is formed.

Hereinafter, a method of manufacturing the active matrix organic electroluminescent display device of the present invention having the above structure will be described.

Amorphous silicon (a-Si:
H) is deposited, and the amorphous silicon is crystallized by polysilicon by the SLS method, and then selectively removed to form islands in the region where the switching transistor 4 and the driving transistor 5 are formed. The semiconductor layers 4a and 5a are formed. At this time, a specific method of crystallizing the amorphous silicon by the SLS method is as follows.

FIG. 8 is a plan view for explaining a method of crystallizing by the SLS method according to the present invention, and FIG. 9 is a plan view of polysilicon crystallized by the SLS method of the present invention. A beam having a size of about 2 μm × 10 mm,
The exposure area / pulse is set to 10 × 10 mm 2 or less, and the amorphous silicon is irradiated by the SLS method to be crystallized by polysilicon.

That is, as shown in FIG. 8, the primary amorphous silicon substrate is irradiated with a beam at regular intervals to crystallize the amorphous silicon, and then the primary irradiation is performed to crystallize the amorphous silicon. The method of irradiating the side surface of the part with the beam secondarily is repeated to crystallize all the amorphous silicon.

When the amorphous silicon layer is crystallized by such a method, grain boundaries are formed in the crystallized polysilicon in the direction parallel to the channel direction as shown in FIG. The degree is significantly improved.

Then, a gate insulating film 30 is formed on the entire surface of the substrate 10 including the semiconductor layers 4a and 5a, and a metal layer is deposited on the entire surface. Then, by selectively removing the metal layer, a scan line 1 is formed on the gate insulating film 30 in one direction so as to pass through the first semiconductor layer 4a, and at the same time, passes through the second semiconductor layer 5a. Then, the gate electrode 5b of the drive transistor is formed. At this time, the scan line 1 and the gate electrode 5b of the driving transistor are formed so as to be separated from each other, and the gate electrode 5b overlaps with a power line 3 which will be formed later to form a capacitor. To form widely.

Impurities (P +) are ion-implanted into the first and second semiconductor layers 4a and 5a using the scan line 1 and the gate electrode 5b of the driving transistor as a mask,
The source and drain regions of the switching transistor and the driving transistor are formed. Therefore, the scan line 1 and the first semiconductor layer 4a form the switching transistor 4, and the gate electrode 5b and the second semiconductor layer 5a form the driving transistor 5.

The scan line 1 and the gate electrode 5b
An interlayer insulating film 50 is deposited on the entire surface including the source and drain regions of the first semiconductor layer 4a and the gate electrode 5b,
The interlayer insulating film 50 and the gate insulating film 30 are selectively removed so that the source region of the second semiconductor layer 5a is exposed to form contact holes.

Then, a metal layer is vapor-deposited on the entire surface and is selectively removed so that it is connected to the source region of the first semiconductor layer 4a on the interlayer insulating film 50 in a direction perpendicular to the scan line 1. A data line 2 is formed on the second semiconductor layer 5a at the same time in a direction perpendicular to the scan line 1.
A power line 3 connected to the source region of the first semiconductor layer 4a and overlapping the gate electrode 5b, and an electrode pattern 20 formed to connect the drain region of the first semiconductor layer 4a to the gate electrode 5b. To do.

A flattening insulating film 70 is formed on the entire surface, and a contact hole is formed in the drain region of the second semiconductor layer 5a on the flattening insulating film 70 so as to be connected to the drain region. The electroluminescent element 7 is formed.

[0047]

As described above, the active matrix organic light emitting display device according to the present invention has the following effects.

First, a TFT of a driving unit for driving an organic EL element and / or a drive IC connected to the driving unit
Since the TFT is manufactured by the SLS method to increase the uniformity of the characteristics of the TFT and have uniform brightness, it is possible to increase the aperture ratio of the element by using a small number of transistors. Second, the TFT of the driver IC (external drive circuit) is manufactured by the SLS method, and the pixel and the drive circuit are integrated on one substrate, whereby the element can be downsized.

[Brief description of drawings]

FIG. 1 is an equivalent circuit diagram of a unit pixel of a conventional 2T active matrix organic light emitting display device.

FIG. 2 is a layout diagram of the active matrix organic light emitting display device of FIG.

FIG. 3 is a cross-sectional view taken along the line II ′ of FIG.

FIG. 4 is a plan view for explaining a conventional crystallization method by a scan method.

FIG. 5 is a plan view of polysilicon crystallized by a conventional scanning method.

FIG. 6 illustrates that the TFT of the pixel unit is formed using the SLS method in the active matrix organic light emitting display device according to the first embodiment of the present invention.

FIG. 7 is a view illustrating an active matrix organic light emitting display device according to a second embodiment of the present invention, in which a pixel unit and a TFT of a drive IC for driving the pixel unit are formed by an SLS method.

FIG. 8 is a diagram illustrating a method of crystallizing by an SLS method according to the present invention.

FIG. 9 is a plan view of polysilicon crystallized by the SLS method of the present invention.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/268 H05B 33/14 A 29/786 H01L 29/78 627G H05B 33/14 612B F term (reference) 3K007 AB11 DB03 GA00 5C094 AA07 AA10 AA13 AA15 AA25 AA43 AA48 AA53 AA55 BA03 BA27 CA19 CA25 DA09 DA13 DB01 DB04 EA04 FB01 FB12 FB14 FB15 FB20 GC10 JA08 5F02A02 BB07A110 A02 A04 BA18 BB07A04 A02 NN02 NN73 PP03 PP05 PP06 PP24 5G435 AA14 AA16 AA17 BB05 CC09 HH12 HH13 HH14 KK05

Claims (14)

[Claims] 1. A scan line arranged in one direction on a substrate, a data line arranged in a direction perpendicular to the scan line, a data line having a certain distance, and parallel to the data line. Direction-aligned power lines, an electroluminescent device formed in a pixel region between the scan line, the data line and the power line, and emitting light according to an applied voltage; and the data line according to a signal of the scan line. A switching transistor for switching the signal of the above, and a driving transistor for applying the power of the power line to the electroluminescent element according to the signal applied through the switching transistor, wherein the switching transistor or the driving transistor is a continuous side surface. Characterized by the crystal system Active matrix organic electroluminescent display device. 2. The SLS method is high throughput polysilicon, SLS directional polysilicon, SL
The active matrix organic light emitting display device of claim 1, wherein any one of S crystal silicon is formed. 3. The active matrix organic material of claim 1, further comprising a capacitor that stores charges based on a difference between a voltage of a data signal applied to the data line and a voltage supplied by the power. Electroluminescent display device. 4. The active matrix organic electric field according to claim 1, further comprising a gate drive IC for applying a scan signal to each scan line, and a data drive IC for applying a data signal to each data line. Emissive display device. 5. The active matrix organic light emitting display device of claim 4, wherein each of the gate drive IC and the data drive IC includes a plurality of thin film transistors, and each thin film transistor is formed by an SLS method. 6. The active matrix organic light emitting display according to claim 4, wherein the SLS method forms one of SLS high-throughput polysilicon, SLS directional polysilicon, and SLS crystal silicon. apparatus. 7. SL is formed by depositing amorphous silicon on a substrate.
Crystallizing the amorphous silicon with polysilicon by S method, and selectively removing the crystallized polysilicon to form first and second semiconductor layers in a region where a switching transistor and a driving transistor are formed. Forming a gate insulating film on the entire surface including each semiconductor layer, forming a scan line in one direction on the gate insulating film so as to pass through the first semiconductor layer, and simultaneously forming the scan line. Forming a gate electrode of the driving transistor so as to pass through the second semiconductor layer; and forming source and drain regions of the switching transistor and the driving transistor in the first and second semiconductor layers on both sides of the scan line and the gate electrode of the driving transistor. And forming an interlayer insulating film on the entire surface, forming a source and drain region of the first semiconductor layer, and Forming a contact hole so that the gate electrode of the driving transistor and the source region of the second semiconductor layer are exposed; and a source region of the first semiconductor layer on the interlayer insulating film in a direction perpendicular to the scan line. A data line is connected to the source line of the second semiconductor layer in a direction perpendicular to the scan line, and a power line is formed to overlap the gate electrode of the driving transistor. Forming an electrode pattern so as to connect the drain region of the first semiconductor layer and the gate electrode of the driving transistor, and planarizing the entire surface to have a contact hole in the drain region of the second semiconductor layer. Forming an insulating film, and an electroluminescent device connected to the drain region on the planarizing insulating film. And a step of forming an active matrix organic light emitting display device. 8. The method of claim 7, wherein the scan line and the gate electrode of the driving transistor are formed to be separated from each other. 9. The method as claimed in claim 7, wherein the gate electrode is formed to have a certain area so as to overlap with the power line to form a capacitor. . 10. The crystallization of the SLS method is about 2 μm.
A beam having a size of × 10 mm is adjusted so that the exposure area per pulse is 10 × 10 mm2 or less, and SL
The method of claim 7, wherein the amorphous silicon is irradiated by the S method to crystallize the polysilicon. 11. The SLS crystallization method comprises irradiating a beam on a primary amorphous silicon substrate at a constant interval to crystallize amorphous silicon, and then performing the primary irradiation to crystallize the amorphous silicon. 8. The method for manufacturing an active matrix organic light emitting display device according to claim 7, wherein the amorphous silicon is crystallized by repeating the method of secondarily irradiating the side surface of the converted portion with a beam. 12. A scan line arranged in one direction, a data line arranged substantially perpendicular to the scan line, a constant distance from the data line, and substantially parallel to the data line. A power line arranged in a line, an electroluminescent device formed in a pixel region between the scan line, the data line and the power line, a switching transistor switching a signal of the data line according to a signal of the scan line, An active matrix organic electroluminescence device comprising: a driving transistor for applying a power source of the power line to the electroluminescent device according to a signal applied through a switching transistor, the driving transistor being formed by a continuous lateral crystal method. Display device. 13. The SLS method is high throughput polysilicon, SLS directional polysilicon, S
The active matrix organic light emitting display device of claim 12, wherein the active matrix organic light emitting display device is any one of LS crystal silicon. 14. The capacitor according to claim 1, further comprising a capacitor that stores a charge based on a difference between a voltage of a data signal applied to the data line and a voltage supplied by the power.
2. The active matrix organic electroluminescent display device according to 2.