JP2003204284A - High frequency switch and high frequency radio equipment - Google Patents

Abstract

(57) [Problem] To provide a small high-frequency switch of four different frequency bands. SOLUTION: A transmission terminal EATx used for transmission of a first and second frequency band, a first reception terminal ERx used for reception of a first frequency band, and a reception terminal EATx used for reception of a second frequency band. A first switch for switching to a second receiving terminal ARx to be used;
, A transmission terminal DPTx used for transmission in the third and fourth frequency bands, a third reception terminal DRx used for reception in the third frequency band, and reception in the fourth frequency band. Fourth receiving terminal PR used for receiving a frequency band
x, a second switch circuit for switching between the first and second
And a demultiplexing unit 3 composed of a low-pass filter (LPF) that passes through the third frequency band and a high-pass filter (HPF) that passes through the third and fourth frequency bands, and reduces harmonic distortion due to amplification during transmission. And a first and a second low-pass filter (LPF).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency switch and a high frequency wireless device used in, for example, a mobile phone, and more particularly to a high frequency switch and a high frequency wireless device used in four different systems.

[0002]

2. Description of the Related Art In recent years, due to expansion of mobile communication users and globalization of its system, for example, AMPS (Advanc) having a corresponding frequency band as shown in FIG.
edMobile Phone Service), E
GSM (Enhanced-Global System)
m for Mobile communicatio
ns), DCS (Digital Cellular)
System), PCS (Personal Comm)
4 different unifications Services)
A four-band compatible mobile phone in which one system is used in one mobile phone has begun to be studied, and a high frequency switch used in the mobile phone is drawing attention. Note that FIG.
FIG. 4 is an explanatory diagram of corresponding frequencies of EGSM, AMPS, DCS and PCS.

Therefore, the configuration and operation of a conventional high frequency switch used in a mobile phone or the like will be described with reference to FIG. 8 which is a block diagram of the conventional high frequency switch. The conventional high frequency switch includes a transmission / reception switching circuit 71,
72 and the transmission / reception switching circuits 71 and 72 are connected to the antenna (AN
It is a high frequency switch compatible with a dual band (the above-mentioned EGSM, DCS) including a branching circuit 73 for connecting to T). The transmission / reception switching circuit 71 has a transmission terminal Tx1 for transmitting EGSM and a reception terminal Rx1 for receiving EGSM, and the transmission / reception switching circuit 72 is a DCS.
It has a transmission terminal Tx2 for transmitting the signal and a reception terminal Rx2 for receiving the DCS.

In the above description, the frequency switch compatible with the dual band is described as an example, but there is also a high frequency switch compatible with the triple band (for example, refer to Patent Document 1).

[0005]

[Patent Document 1] Japanese Patent Laid-Open No. 2000-165274

[0006]

[Problems to be Solved by the Invention] However, in the future,
4 bands (eg EGSM / AMPS / DCS / PC
Although it is possible to further combine S) and the like by increasing the number of bands, there was a problem in that case such as an increase in circuit scale.

The present invention has been made in view of the above problems of the prior art, and an object thereof is to provide a small-sized multi-band compatible high-frequency switch and a high-frequency wireless device.

[0008]

A first aspect of the present invention is a high-frequency switch having a plurality of signal paths corresponding to four frequency bands, wherein a transmission signal and a reception signal in the four frequency bands are changed according to frequencies. Demultiplexing means for demultiplexing, a first and second transmission / reception switching means for switching to any one of the plurality of signal paths, and a plurality of filters arranged in the signal path. The first and second transmission / reception switching means are connected to the demultiplexing means, and the first transmission / reception switching means is a switching signal to be transmitted in the first frequency band and the second frequency band. A first common transmitter end for the first frequency band, a first receiver end for the first frequency band received signal, and a second common end for the second frequency band received signal. It is connected and consists of 1 input and 3 output ports, The second transmission / reception switching means has, as switching targets, a second common transmission end for transmission signals in the third frequency band and the fourth frequency band, and a reception signal in the third frequency band. A third receiving end for the
Is a high-frequency switch which is connected to a fourth receiving end for receiving signals in the frequency band of 1 and is composed of 1 input and 3 output ports.

A second aspect of the present invention has a plurality of control power sources for switching on / off states of a plurality of diodes of the first and second transmission / reception switching means, and the first transmission / reception switching means has the first and second control power sources. Is a high-frequency switch according to the first aspect of the present invention, in which the common transmission end side and the fourth reception end side in the second transmission / reception switching unit are controlled by a first common control power supply.

A third aspect of the present invention has a plurality of control power sources for switching ON / OFF states of a plurality of diodes of the first and second transmission / reception switching means, and the second control circuit of the first transmission / reception switching means. Is a high-frequency switch according to the second aspect of the present invention, in which the receiving end side of the above and the second common transmitting end side of the second transmission / reception switching means are controlled by a second common control power supply.

According to a fourth aspect of the present invention, the first transmission / reception switching means includes a first diode whose anode is connected to the first common transmission end and whose cathode is connected to the demultiplexing means. The second transmission / reception switching means has a second diode whose anode is connected to the fourth receiving end and whose cathode is connected to the demultiplexing means,
A first inductor is connected to the anode of the first diode, a second inductor is connected to the anode of the second diode, and the first and second inductors are grounded via a first capacitor. And a high frequency switch according to a third aspect of the present invention connected to a first common control terminal for the first common control power supply.

According to a fifth aspect of the present invention, the second transmission / reception switching means includes a third diode whose anode is connected to the second common transmission end and whose cathode is connected to the demultiplexing means. The first transmission / reception switching unit has a fourth diode whose anode is connected to the second receiving end and whose cathode is connected to the demultiplexing unit;
A third inductor is connected to the anode of the third diode, a fourth inductor is connected to the anode of the fourth diode, and the third and fourth inductors are grounded via a second capacitor. And a high frequency switch according to a fourth aspect of the present invention connected to a second common control terminal for the second common control power supply.

In a sixth aspect of the present invention, a plurality of strip lines and a plurality of capacitors, which form the first and second transmission / reception switching means, the plurality of filters, and the demultiplexing means, form a plurality of electrode patterns. Laminate formed on a dielectric layer, via hole conductors for forming the plurality of strip lines and the plurality of capacitors are formed between the dielectric layers, and formed by laminating the dielectric layers At least one of a diode, a capacitor, a resistor, and an inductor for configuring the first and second transmission / reception switching means, the plurality of filters, and the demultiplexing means is installed on the body. 5 is the high frequency switch of the present invention.

In a seventh aspect of the present invention, the first invention is provided inside the laminate.
Ground electrode patterns are arranged, and the first ground electrode pattern includes a first strip line forming the first inductor and a second strip line forming the second inductor.
Is a high frequency switch according to the sixth aspect of the present invention, which is arranged so as to insert the first ground electrode pattern in the stacking direction of the stacked body.

An eighth aspect of the present invention is the second aspect in which the laminated body is provided.
Ground electrode patterns are arranged, and the second ground electrode pattern includes a third strip line that forms the third inductor and a fourth strip line that forms the fourth inductor.
Is a high frequency switch according to the seventh aspect of the present invention, which is arranged so as to insert the second ground electrode pattern in the stacking direction of the stacked body.

A ninth aspect of the present invention is the high-frequency switch according to the eighth aspect of the present invention, wherein the first ground electrode pattern and the second ground electrode pattern arranged in the laminate are the same.

In a tenth aspect of the present invention, the first stripline forming the first inductor and the second stripline forming the second inductor do not overlap in the stacking direction. Located in the 6th
Is a high frequency switch of the present invention.

According to an eleventh aspect of the present invention, the third strip line forming the third inductor and the fourth strip line forming the fourth inductor do not overlap in the stacking direction. Located in the 6th
Is a high frequency switch of the present invention.

A twelfth aspect of the present invention is that the electrode widths of the first strip line, the second strip line, the third strip line, and the fourth strip line are the first strip line, The high-frequency switch according to the eighth aspect of the present invention is thinner than the electrode widths of strip lines other than the second strip line, the third strip line, and the fourth strip line.

A thirteenth aspect of the present invention is to provide a first transmission terminal electrode connected to the first common transmission end, and a second transmission terminal electrode connected to the second common transmission end, The first
First receiving terminal electrode, second receiving terminal electrode, and third receiving terminal which are respectively connected to the receiving end, the second receiving end, the third receiving end, and the fourth receiving end. Terminal electrodes,
A fourth receiving terminal electrode, first and second control terminal electrodes respectively connected to the first and second control terminals,
A plurality of ground terminal electrodes electrically connected to the first ground electrode pattern are formed on a bottom surface of the laminate, and are provided between the first transmission terminal electrode and the fourth reception terminal electrode. The high-frequency switch according to the seventh aspect of the present invention, in which the first control terminal electrode is arranged.

The 14th aspect of the present invention is the high-frequency switch according to the 13th aspect of the present invention, wherein a second control terminal electrode is disposed between the second transmitting terminal electrode and the second receiving terminal electrode. is there.

The fifteenth aspect of the present invention is the thirteenth aspect, wherein at least one of the plurality of ground terminal electrodes is arranged between the first receiving terminal electrode and the second receiving terminal electrode.
Is a high frequency switch of the present invention.

The sixteenth aspect of the present invention is the thirteenth aspect, wherein at least one of the plurality of ground terminal electrodes is arranged between the third receiving terminal electrode and the fourth receiving terminal electrode.
Is a high frequency switch of the present invention.

The seventeenth aspect of the present invention divides a received signal and a transmitted signal into a received signal and a transmitted signal having a frequency lower than a predetermined frequency and a received signal and a transmitting signal having a frequency higher than the predetermined frequency. Demultiplexing means for wave, a transmission path for transmitting a transmission signal of all or a part of a plurality of frequency bands lower than the predetermined frequency, and a plurality of lower than the predetermined frequency First transmission / reception switching means for switching a reception path for transmitting a reception signal corresponding to each frequency in the frequency band, and all or part of frequencies of at least one frequency band higher than the predetermined frequency A transmission path for transmitting a transmission signal of the band, and a reception path for transmitting a reception signal corresponding to each frequency of at least one frequency band higher than the predetermined frequency Of the second transmission / reception switching unit, and a second transmission / reception switching unit for switching between the first transmission / reception switching unit and the second transmission / reception switching unit to be switched by the first transmission / reception switching unit. A common control terminal for controlling any one of the transmission path and the reception path, which is a switching target, so as to be simultaneously connected to the demultiplexing means, and is simultaneously connected. The one path of the first transmission / reception switching means and the one path of the second transmission / reception switching means,
It is a high-frequency switch in which the relationship between transmission and reception is opposite.

The eighteenth aspect of the present invention divides a received signal and a transmitted signal into a received signal and a transmitted signal having a frequency lower than a predetermined frequency and a received signal and a transmitting signal having a frequency higher than the predetermined frequency. Demultiplexing means for wave, a transmission path for transmitting a transmission signal of all or a part of at least one frequency band lower than the predetermined frequency, and at least lower than the predetermined frequency First transmission / reception switching means for switching a reception path for transmitting a reception signal corresponding to each frequency in one frequency band, and all or a part of a plurality of frequency bands higher than the predetermined frequency. A transmission path for transmitting a transmission signal in a frequency band, and a reception path for transmitting a reception signal according to each frequency of a plurality of frequency bands higher than the predetermined frequency Of the second transmission / reception switching unit, and a second transmission / reception switching unit for switching between the first transmission / reception switching unit and the second transmission / reception switching unit to be switched by the first transmission / reception switching unit. A common control terminal for controlling any one of the transmission path and the reception path, which is a switching target, so as to be simultaneously connected to the demultiplexing means, and is simultaneously connected. The one path of the first transmission / reception switching means and the one path of the second transmission / reception switching means,
It is a high-frequency switch in which the relationship between transmission and reception is opposite.

In the nineteenth aspect of the present invention, the common control terminal transmits a transmission path for transmitting a transmission signal of the first transmission / reception switching means and a reception signal of the second transmission / reception switching means. A first common control terminal for controlling so as to simultaneously connect the receiving path and the demultiplexing means, a transmission path for transmitting a transmission signal of the second transmission / reception switching means, and the first A first common control terminal for controlling a reception path for transmitting a reception signal of the transmission / reception switching means and a second common control terminal for simultaneously connecting the reception path and the demultiplexing means;
7 is the high frequency switch of the present invention.

In the twentieth aspect of the present invention, the common control terminal transmits a transmission path for transmitting a transmission signal of the first transmission / reception switching means and a reception signal of the second transmission / reception switching means. A first common control terminal for controlling so as to simultaneously connect the receiving path and the demultiplexing means, a transmission path for transmitting a transmission signal of the second transmission / reception switching means, and the first A first common control terminal for controlling a reception path for transmitting a reception signal of the transmission / reception switching means and a second common control terminal for simultaneously connecting the reception path and the demultiplexing means;
8 is a high frequency switch of the present invention.

A twenty-first aspect of the present invention is the radio frequency switch according to any one of the first to twentieth aspects of the present invention, a receiver connected to the radio frequency switch for processing a reception signal, and the radio frequency switch connected to transmit a transmission signal. A high-frequency wireless device including a transmitting device for generating.

A twenty-second aspect of the present invention is to divide the transmission signal and the reception signal of four frequency bands according to frequencies, and to connect a plurality of them to the plurality of demultiplexers corresponding to the four frequency bands. A method for operating a high-frequency switch, comprising: first and second transmission / reception switching means for switching to any one of the signal paths of 1) and a plurality of filters arranged in the signal path, The first transmission / reception switching unit has a first common transmission end for transmission signals in the first frequency band and the second frequency band;
Switching between a first receiving end for a receiving signal in the frequency band and a second receiving end for a receiving signal in the second frequency band; and the second transmission / reception switching means, Three
Second common transmission end for transmission signals in the fourth frequency band and the third reception end for the reception signal in the third frequency band, and the fourth frequency band And a step of switching the fourth reception end for the reception signal of (4), and operating the high-frequency switch.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) First, the configuration of the high-frequency switch according to Embodiment 1 will be described mainly with reference to FIG. 1. FIG. 1 is a block diagram of the high frequency switch according to the first embodiment.

The high frequency switch 10 of the first embodiment is
A frequency band for EGSM which is an example of the first frequency band of the present invention, and an AMP which is an example of the second frequency band of the present invention
Transmission of a frequency band for S, a frequency band for DCS that is an example of the third frequency band of the present invention, and a frequency band for PCS that is an example of the fourth frequency band of the present invention A first switch circuit 1 which is an example of a first transmission / reception switching means of the present invention, which is a high frequency switch for four bands having a filter function, which passes the frequency band and the reception frequency band, and the second switch of the present invention. The second switch circuit 2, which is an example of the transmission / reception switching means, and the demultiplexing circuit 3, which is an example of the demultiplexing means of the present invention.

Next, the high frequency switch 1 of the first embodiment
Each means of 0 will be described in more detail.

The branching circuit 3 has internal terminals 21 and 22 and an antenna terminal 20 for connecting to an antenna (ANT).
A low-pass filter (LPF) connected between the internal terminal 21 and the antenna terminal 20 to pass the first and second frequency bands, and a third connected between the internal terminal 22 and the antenna terminal 20. And a high-pass filter (HPF) that passes the fourth frequency band. That is, the demultiplexing circuit 3 has a configuration for demultiplexing a transmission signal and a reception signal having a frequency lower than a predetermined frequency and a transmission signal and a reception signal having a frequency higher than the predetermined frequency. That is, the demultiplexing circuit 3 demultiplexes the received signal having a frequency lower than the predetermined frequency and the received signal having a frequency higher than the predetermined frequency among the received signals, and outputs the received signal having a frequency higher than the predetermined frequency. A low frequency transmission signal, and a high frequency transmission signal higher than a predetermined frequency,
It has a configuration for transmitting any of the above from one antenna.

The first switch circuit 1 which is an example of the first transmission / reception switching means of the present invention is used for transmission in the first and second frequency bands (shared for performing two transmissions). , A transmission terminal EATx, which is an example of a first common transmission end of the present invention, a first reception terminal ERx used for reception of a first frequency band, and a reception terminal of a second frequency band. It is connected to the internal terminal 21 for switching between the second receiving terminal ARx and the second receiving terminal ARx. The first switch circuit 1
Between the internal terminal 23 and the transmission terminal EATx of the first low-pass filter (LP) for reducing harmonic distortion due to amplification when transmission is performed using the transmission terminal EATx.
F) 12 is inserted.

The second switch circuit 2, which is an example of the second transmission / reception switching means of the present invention, is used for transmission in the third and fourth frequency bands (shared for performing two transmissions). A transmission terminal DPTx, which is an example of a second common transmission end of the present invention, a third reception terminal DRx used for reception of a third frequency band, and a reception terminal of a fourth frequency band. It is connected to the internal terminal 22 in order to switch the fourth receiving terminal PRx. The second switch circuit 2
Between the internal terminal 24 and the transmission terminal DPTx of the second low-pass filter (LP) for reducing harmonic distortion due to amplification when transmitting using the transmission terminal DPTx.
F) 13 is inserted.

The first switch circuit 1 has a control power supply terminal V for switching on / off a plurality of diodes.
The second switch circuit 2 is also connected to control power supply terminals Vc3 and Vc4 for switching ON / OFF of a plurality of diodes.

As described above, as shown in FIG.
First switch circuit 1 and second switch circuit 2
Has one input and three output ports.

Next, the detailed circuit configuration of each block of the high frequency switch according to the first embodiment will be described with reference to FIG. 2 is a circuit diagram of the high frequency switch according to the first embodiment.

Demultiplexing circuit 3 which is an example of the demultiplexing means of the present invention.
Is composed of inductors L1 and L2 and capacitors C1 to C5, the inductor L1 and the capacitor C1 are connected in parallel between the antenna terminal 20 and the internal terminal 21, and the internal terminal 21 is grounded via the capacitor C2. Also,
A capacitor C is provided between the antenna terminal 20 and the internal terminal 22.
3 and the capacitor C4 are connected in series, and the capacitor C3
The connection point between the capacitor C4 and the capacitor C4 is grounded via the series circuit of the inductor L2 and the capacitor C5.

The first switch circuit 1 includes a diode D1
To D3, inductors L3 to L8, capacitors C6 to C1
The resistor R1 is commonly used in the first and second switch circuits 1 and 2.

The diode D1 has an anode connected to the third internal terminal 23 and a cathode connected to the internal terminal 21, and a series circuit of an inductor L3 and a capacitor C7 is connected in parallel with the diode D1. The anode of the diode D1 is grounded via a series circuit of the inductor L4 and the capacitor C8, and the connection point of the inductor L4 and the capacitor C8 is connected to the first control power supply terminal Vc1.

Further, the internal terminal 21 and the first receiving terminal ER
An inductor L5 is connected between x and the internal terminal 21 is grounded via a capacitor C6. The anode of the diode D2 is connected to the first reception terminal ERx, and the cathode is grounded via the capacitor C9 and the inductor L6 and the resistor R1 in series.

Further, the diode D3 has an anode connected to the second reception terminal ARx and a cathode connected to the internal terminal 21, and a series circuit of an inductor L7 and a capacitor C10 is connected in parallel to the diode D3. The anode of the diode D3 is the inductor L8 and the capacitor C1.
1 is connected to the ground via the series circuit, and the inductor L
8 is connected to the capacitor C11 at the second control power supply terminal V
It is connected to c2.

The second switch circuit 2 includes a diode D4
~ D6, inductors L9 to L14, capacitor C12 ~
C17 and a resistor R1 commonly used by the first and second switch circuits 1 and 2.

The anode of the diode D4 is the internal terminal 24.
, The cathode is connected to the internal terminal 22, and the diode D
In parallel with 4, a series circuit of an inductor L9 and a capacitor C13 is connected. The anode of the diode D4 is grounded via the series circuit of the inductor L10 and the capacitor C14, and the connection point of the inductor L10 and the capacitor C14 is connected to the third control power supply terminal Vc3.

Further, the internal terminal 22 and the third receiving terminal DR
The inductor L11 is connected between x and the internal terminal 22
Is grounded via a capacitor C12. The anode of the diode D5 is connected to the third reception terminal DRx, and the cathode is grounded via the capacitor C15 and the inductor L12 and the resistor R1 in series.

Further, the diode D6 has an anode connected to the fourth reception terminal PRx and a cathode connected to the internal terminal 22, and is connected in parallel to the diode D6 with the inductor L13 and the first terminal.
A series circuit of 6 capacitors C16 is connected. The anode of the diode D6 is grounded via a series circuit of an inductor L14 and a capacitor C17, and
The connection point between the inductor L14 and the capacitor C17 is connected to the fourth control power supply terminal Vc4.

The first low pass filter 12 is composed of an inductor L15 and capacitors C18 to C20,
A parallel circuit of an inductor L15 and a capacitor C20 is connected between the fourth internal terminal 24 and the transmission terminal EATx, the internal terminal 24 is grounded via a capacitor C19, and the transmission terminal EATx is grounded via a capacitor C18. .

The second low pass filter 13 is composed of an inductor L16 and capacitors C21 to C23,
An inductor L1 is provided between the internal terminal 24 and the transmission terminal DPTx.
6 and the capacitor C23 are connected in parallel, the internal terminal 24 is grounded via the capacitor C21, and the transmission terminal D
PTx is grounded via a capacitor C22.

As described above, the path from the terminal EATx to the demultiplexing circuit 3, the path from the terminal ERx to the demultiplexing circuit 3,
The path from the terminal ARx to the demultiplexing circuit 3, the path from the terminal DPTx to the demultiplexing circuit 3, the path from the terminal DRx to the demultiplexing circuit 3, and the path from the terminal PRx to the demultiplexing circuit 3 are respectively divided as switching targets. It is connected to the wave circuit 3 and corresponds to an example of a plurality of signal paths of the present invention.

Next, the high frequency switch 10 of the first embodiment
The operation of will be described. First, EGSM or AMP
When transmitting the S transmission signal, the first switch circuit 1
By applying 3V to the first control power supply terminal Vc1 and 0V to the second control power supply terminal Vc2, the internal terminals 21 and 23 of the first switch circuit 1 are connected to each other. , EGSM or AMPS transmit signal is first
A signal is transmitted from the antenna after passing through the low-pass filter 12, the first switch circuit 1, and the branching circuit 3. At this time, the third control power supply terminal Vc of the second switch circuit 2
0V is applied to the third and fourth control power supply terminals Vc4.

Next, when receiving a reception signal of EGSM, 0 V is applied to the first and second control power supply terminals Vc1 and Vc2 of the first switch circuit 1 to make the first switch circuit 1 By connecting the internal terminal 21 and the first receiving terminal ERx of the EGSM, the received signal of EGSM passes from the antenna to the demultiplexing circuit 3 and the first switch circuit 1 to obtain the first receiving terminal ERx. Sent to. At this time, 0 V is applied to the third control power supply terminal Vc3 and the fourth control power supply terminal Vc4 of the second switch circuit 2.

Next, when receiving the reception signal of AMPS, the first control power supply terminal Vc1 of the first switch circuit 1 is received.
To the second control power supply terminal Vc2 to connect the internal terminal 21 of the first switch circuit 1 and the second reception terminal ARx to each other, thereby the AMPS
The received signal of 1 passes through the demultiplexing circuit 3 and the first switch circuit 1 from the antenna and is sent to the second receiving terminal ARx. At this time, 0 V is applied to the third control power supply terminal Vc3 and the fourth control power supply terminal Vc4 of the second switch circuit 2.

When transmitting a DCS or PCS transmission signal, the third control power supply terminal V of the second switch circuit 2 is used.
3V is applied to c3 and 0 is applied to the fourth control power supply terminal Vc4.
By applying V and connecting the internal terminal 22 and the internal terminal 24 of the second switch circuit 2, the DCS or PCS transmission signal is divided by the second low-pass filter 13, the second switch circuit 2, and A signal is transmitted from the antenna after passing through the wave circuit 3. At this time, the first control power supply terminal Vc1 and the second control power supply terminal Vc2 of the first switch circuit 1
Is applied with 0V.

Next, when receiving the reception signal of DCS, 0V is applied to the third and fourth control power supply terminals Vc3 and Vc4 of the second switch circuit 2, and the second switch circuit 2 receives the second signal. By setting the internal terminal 22 and the third receiving terminal DRx in the connected state, the received signal of DCS passes from the antenna to the branching circuit 3 and the second switch circuit 2,
It is sent to the third reception terminal DRx. At this time, 0 V is applied to the first control power supply terminal Vc1 and the second control power supply terminal Vc2 of the first switch circuit 1.

Next, when receiving the reception signal of the PCS, the third control power supply terminal Vc3 of the second switch circuit 2 is received.
To the fourth control power supply terminal Vc4 to connect the internal terminal 22 of the second switch circuit 2 and the fourth reception terminal PRx to each other, the reception signal of the PCS is From the antenna, passes through the branching circuit 3 and the second switch circuit 2, and is sent to the fourth receiving terminal PRx.
At this time, the first control power supply terminal V of the first switch circuit 1
0V is applied to c1 and the second control power supply terminal Vc2.

As described above, the first control power supply terminal Vc1
Therefore, the state of the high-frequency switch according to the present embodiment can be changed by turning on and off the control voltage to the fourth control power supply terminal Vc4. Table 1 shows a list of combinations for turning on and off the control voltage at each control terminal in this manner.

[0059]

[Table 1] As described above, according to the first embodiment, by using the 4-port configuration in which the first switch circuit 1 and the second switch circuit 2 use three diodes, It is possible to configure a 4-band high-frequency switch that suppresses the expansion of the circuit scale.

Although the above description has been made on the premise of a 4-band high-frequency switch, the high-frequency switch of the present invention may be a multi-band high-frequency switch. In that case, each transmission terminal may be configured so that the number of ports is less than twice the number of bands. For example, in the case of a high-frequency switch compatible with 6 bands, each transmission terminal may share a transmission signal of 3 bands, and a transmission terminal that shares a transmission signal of 2 bands and a transmission terminal that uses a transmission signal of 1 band. And may be configured.

(Second Embodiment) Next, the configuration of a high frequency switch according to the second embodiment will be described with reference to FIG. 3 is a block diagram of the high frequency switch according to the second embodiment.

The high frequency switch 30 of the second embodiment is
Similar to the high frequency switch 10 of the first embodiment, a first frequency band (EGSM), a second frequency band (AMPS),
Third frequency band (DCS) and fourth frequency band (PC
A high-frequency switch corresponding to four bands having a filter function of passing the transmission frequency band and the reception frequency band in each of S), which includes first and second switch circuits (transmission / reception switching circuits) 1 and 2, and a demultiplexer. The circuit 3 is provided. Therefore, parts different from the high frequency switch 10 of the first embodiment will be described.

The high frequency switch 30 of the second embodiment is
A control power supply terminal for switching ON / OFF of a plurality of diodes of the first switch circuit 1 and a control power supply terminal for switching ON / OFF of a plurality of diodes of the second switch circuit 2 are provided by the present invention. The control power supply terminal Vc31, which is an example of the first control terminal, and the Vc32, which is an example of the second control terminal of the present invention, are commonly used.

Next, the circuit configuration of the high frequency switch 30 of the second embodiment will be described with reference to FIG.
4 is a circuit diagram of the high-frequency switch according to the second embodiment, and the elements corresponding to the high-frequency switch according to the first embodiment shown in FIG. 2 have the same reference numerals as those in FIG. Note that the demultiplexing circuit 3, the first low-pass filter 12, and the second low-pass filter 13 have the same circuit configurations as those described in the first embodiment, and therefore the description thereof is omitted here. Further, regarding the first switch circuit 1 and the second switch circuit 2, only the portions different from the first embodiment will be described in detail.

In the first switch circuit 1, the anode of the diode D1 which is an example of the first diode of the present invention is the inductor L17 which is an example of the first inductor of the present invention and the first and second switch circuits. 1 and 2 are grounded via a series circuit with a capacitor C24, which is an example of the first capacitor of the present invention, and the connection point between the inductor L17 and the capacitor C24 serves as a first common control power supply. It is connected to the connected first control power supply terminal Vc31.

Further, the anode of the diode D3 which is an example of the fourth diode of the present invention is common to the inductor L18 which is an example of the fourth inductor of the present invention and the first and second switch circuits 1 and 2. , Is grounded via a series circuit with a capacitor C25 which is an example of the second capacitor of the present invention, and also has an inductor L18 and a capacitor C2.
The connection point of 5 is connected to the second common control power source
Is connected to the control power supply terminal Vc32.

In the second switch circuit 2, the anode of the diode D4, which is an example of the third diode of the present invention, has the inductor L19, which is an example of the third inductor of the present invention, and the first and second inductors L19. The switch circuit 1 and 2 are grounded via a series circuit of the common capacitor C24, and the connection point between the inductor L19 and the capacitor C24 is connected to the first control power supply terminal Vc31.

Further, the anode of the diode D6, which is an example of the second diode of the present invention, is common to the inductor L20, which is an example of the second inductor of the present invention, and the first and second switch circuits 1 and 2. The connection point between the inductor L20 and the capacitor C25 is connected to the second control power supply terminal Vc3 while being grounded via the series circuit with the capacitor C25.
Connected to 2.

The inductors L17 to L20 are EG
Select an inductor that has a sufficiently large impedance in the frequency bands of SM and AMPS transmission and reception signals.

Next, the high frequency switch 30 of the second embodiment
The operation of will be described. First, EGSM or AMP
When transmitting the S transmission signal, the first control power supply terminal V
3V is applied to c31, 0V is applied to the second control power supply terminal Vc32, and the internal terminal 21 of the first switch circuit 1 is applied.
By connecting the internal terminal 23 with the EGS,
The transmission signal of M or AMPS passes through the first low pass filter 12, the first switch circuit 1 and the demultiplexing circuit 3, and the signal is transmitted from the antenna.

Next, when receiving the reception signal of EGSM, 0 V is applied to the first and second control power supply terminals Vc31 and Vc32, and the internal terminal 21 and the first reception terminal of the first switch circuit 1 are applied. By connecting to ERx,
The received signal of the EGSM is transmitted from the antenna to the demultiplexing circuit 3, the first
Through the switch circuit 1 and is sent to the first receiving terminal ERx.

Next, when receiving the reception signal of AMPS, 0 V is applied to the first control power supply terminal Vc31, and the second control power supply terminal Vc31 is applied.
By applying 3V to the control power supply terminal Vc32 of the above and setting the internal terminal 21 of the first switch circuit 1 and the second receiving terminal ARx to the connected state, the received signal of AMPS is transmitted from the antenna to the demultiplexing circuit 3, The signal passes through the first switch circuit 1 and is sent to the second reception terminal ARx.

When transmitting a DCS or PCS transmission signal, 3V is applied to the first control power supply terminal Vc32.
By applying 0V to the second control power supply terminal Vc31 and connecting the internal terminal 22 and the internal terminal 24 of the second switch circuit 2, the DCS or PCS transmission signal is transmitted by the second low-pass filter 13. , The second switch circuit 2 and the demultiplexing circuit 3, and a signal is transmitted from the antenna.

Next, when receiving a DCS reception signal, 0 V is applied to the first and second control power supply terminals Vc31 and Vc32, and the internal terminal 22 and the third reception terminal of the second switch circuit 2 are applied. By connecting to DRx,
The reception signal of DCS passes from the antenna to the branching circuit 3 and the second switch circuit 2 and is sent to the third receiving terminal DRx.

Next, when receiving the reception signal of the PCS, 0V is applied to the first control power supply terminal Vc31, and the second control power supply terminal Vc31 is applied.
By applying 3V to the control power supply terminal Vc32 of the above and setting the internal terminal 22 of the second switch circuit 2 and the fourth receiving terminal PRx to the connected state, the received signal of the PCS is transmitted from the antenna to the branching circuit 3, Passing through the second switch circuit 2,
It is sent to the fourth receiving terminal PRx.

With this configuration, the EGSM
Alternatively, since the transmission of the AMPS transmission signal and the transmission of the DCS or PCS transmission signal do not occur at the same time, the transmission terminal EATx and the transmission terminal DPTx.
Since a sufficient isolation between and can be secured, it is possible to suppress the wraparound of the harmonic distortion signal during transmission.

As described above, the first control power supply terminal Vc3
By turning on / off the control voltage to the first and second control power supply terminals Vc32, the state of the high frequency switch of the present embodiment can be changed. Table 2 shows a list of combinations for turning on and off the control voltage at each control terminal in this manner.

[0078]

[Table 2] As described above, according to the second embodiment, the inductor connected to the control power supply terminal is selected so as to have a sufficiently large impedance in the first to fourth frequency bands. It is possible to reduce the number of control power supply terminals by sharing a power supply terminal for controlling ON / OFF of the plurality of diodes of the first and second switch circuits 2.

Although the above description has been made on the premise of a high frequency switch compatible with four bands, the high frequency switch of the present invention may be a high frequency switch compatible with multiple bands. In that case, each transmission terminal is configured such that the number of ports is less than twice the number of bands, and the transmission terminal side of the first transmission / reception switching means and the second
A common control power supply terminal is formed so that any one of the reception terminals of the transmission / reception switching means of the second transmission / reception switching means is simultaneously connected to the branching circuit 3, and the transmission terminal side of the second transmission / reception switching means and the first transmission / reception switching It suffices if a common control power supply terminal is formed so that one of the receiving terminals of the means is connected to the branching circuit 3 at the same time.

Contrary to the above, the high frequency switch of this embodiment may be a high frequency switch compatible with three bands. In that case, in the example of the high frequency switch shown in FIG. 3, the EAt connected to the switch circuit 1 is used.
x is a transmission terminal shared by two bands, DPTx connected to the switch circuit 2 is a transmission terminal for another one band, and either DRx or PRx is omitted. Or, conversely to the above, EATx is a transmission terminal for one band, DPTx is a transmission terminal for two bands, and
Either x or ARx is omitted.

Further, as in the example of the above-mentioned three bands, the switching circuit 1 is also used in the high frequency switch corresponding to the four bands.
It is also conceivable that EATx connected to is a transmission terminal shared by 3 bands and DPTx connected to the switch circuit 2 is a transmission terminal for 1 band. Further, in a high-frequency switch supporting more than four bands, the number of corresponding bands used by the transmission terminals connected to the switch circuit 1 and the number of corresponding bands used by the transmission terminals connected to the switch circuit 2 Can be different.

In the above case, the high frequency switch of the present invention connects the transmission path to be switched by the switch circuit 1 and the reception path to be switched by the switch circuit 2 to the demultiplexing circuit 3 at the same time. Control so that the first common control terminal, the transmission path to be switched by the switch circuit 2 and the reception path to be switched by the switch circuit 1 are simultaneously connected to the demultiplexing circuit 3. And a second common control terminal.

(Third Embodiment) Next, the structure of the high frequency switch according to the third embodiment will be described with reference to FIGS. Note that FIG. 5A is an explanatory diagram of the high frequency switch (front side) in the third embodiment, and FIG.
6B is an explanatory diagram of a high frequency switch (back side) according to the third embodiment, and FIG. 6 is a part of an exploded perspective view of the high frequency switch according to the third embodiment.

The high frequency switch of the third embodiment is constructed by stacking a plurality of dielectric layers DL.
The number of laminated dielectric layers is appropriately selected according to the required characteristics of the high frequency switch.

As the dielectric layer, it is possible to use a so-called glass ceramic substrate in which a low melting glass frit is mixed with ceramic powder such as forsterite or a compound containing alumina as a main component. Further, the green sheet formed by molding the slurry obtained by mixing the ceramic powder with an organic binder and an organic solvent,
A large number of via holes for electrically connecting the multilayer wirings are formed by mechanical punching or laser processing.

Printing is performed on a predetermined green sheet by using a conductive paste containing silver (or gold or copper) powder as a main component of a conductor to form a wiring pattern, and at the same time, each green sheet is printed. A strip line and a capacitor electrode are formed by printing and filling a conductive paste in the via hole for connecting the wiring patterns between layers.

The green sheets thus obtained are accurately aligned, the dielectric layers DL are laminated in order, and heated and pressed under a certain condition to form an integrated laminate. Can be obtained. After drying this laminate, 400 to 50 in a baking furnace in an oxidizing atmosphere.
The organic binder in the green sheet is burned out by firing at 0 degree, and (1) when powder of gold or silver is used as the main component of the conductor, in normal air, (2) powder of copper. When the body is used, the laminate 50 can be finally obtained by firing in a temperature range of about 850 to 950 degrees in an inert gas or a reducing atmosphere.

As shown in FIG. 5, diodes D1 to D6 and chip parts such as capacitors and resistors are formed on the upper surface of a laminated body 50 having a multi-layered structure in which various strip lines and capacitors constituting a high frequency switch are built. SD1 to SD6 are mounted via respective terminals T1 formed on the upper surface of the laminated body 50 and electrically connected to the internal circuit of the laminated body 50.

A plurality of terminals T21 to T32 for surface-mounting the high-frequency switch on the main board of the electronic device are formed on the back surface of the laminated body 50. The terminals T1 and T21 to T32 are formed by printing and patterning the conductive paste as described above.

Next, the laminated structure of the wiring patterns of the high frequency switch having such a multilayer structure will be described with some examples.

The stripline electrode pattern on the dielectric layer DL5 is interlayer-connected to the stripline electrode pattern on the dielectric layer DL4 via the via hole electrodes Vp11 and Vp21. The strip line electrode pattern of the dielectric layer DL4 is the via hole electrodes Vp12 and Vp2.
It is interlayer-connected to the stripline pattern of the dielectric layer DL3 via 2. In this way, for example, the strip line L17 forming the inductor 17 and the strip line L19 forming the inductor 19 are sequentially arranged on the dielectric layers DL1 to DL via the via hole electrodes.
5 layers of 5 are connected.

In the capacitors C3 and C4, the electrode pattern of the capacitor C3 is provided on the dielectric layer DL1, the electrode pattern shared by the capacitors C3 and C4 is provided on the dielectric layer DL2, and the capacitor pattern is provided on the dielectric layer DL3. By providing the electrode pattern of C4, they are connected in series.

Similarly, the stripline electrode pattern, the capacitor electrode pattern, and the via-hole electrode are appropriately arranged and appropriately electrically connected to the diode or the like mounted on the surface layer of the laminated body 50, so that the high frequency wave shown in FIG. 4 is obtained. The circuit of the switch is formed in the laminated body 50. The strip lines L17 and L19 and the capacitors C3 and C4 shown in FIG. 6 correspond to the inductor and the capacitor shown in FIG. 4, respectively.

In this way, the strip line and the capacitor are configured, but since all the input / output terminals of the high frequency switch in the third embodiment are gathered on the back surface of the laminated body 50 through the via holes, It is possible to reduce the mounting area when mounted on the main board of an electronic device.

By arranging the strip line L17 and the strip line L20 so as not to overlap each other in the stacking direction, it is possible to prevent coupling between the strip lines, and the first high frequency switch 1 and the second high frequency switch 2 can be prevented. It becomes possible to secure sufficient isolation between the two.

Further, by disposing the ground electrode pattern 80 between the strip line L17 and the strip line L20 in the stacking direction, the isolation between the first high frequency switch 1 and the second high frequency switch 2 is further achieved. It becomes possible to improve.

In the third embodiment, the inductor L1
The relationship between 7 and inductor L20 has been described,
The same effect can be obtained between the inductors L18 and L19 (see FIG. 7).

Further, the inductor L is formed on the dielectric layer DL5.
1 is arranged, the strip lines L17 and L19 have the same line width as the strip line L1 and the like.
By narrowing the line width of the strip lines other than the above, it is possible to configure an inductor having a large inductor value in a small area, and at the same time, it is possible to prevent interference with other strip lines. The same applies to the strip lines L18 and L20.

Further, the plurality of terminals formed on the bottom surface of the laminated body 50 are the terminal electrodes connecting T26 to the transmission terminal EATx, T25 is the terminal electrode connecting to the first control power supply terminal Vc1, and T24 is the first electrode. By making the terminal electrode connected to the receiving terminal PRx of No. 4, the first control power supply terminal Vc
It is possible to minimize the wiring of the line from 1, which can contribute to the miniaturization of the device. Further, by disposing the control power supply terminal through which only the DC signal passes between the terminal electrodes through which the high frequency signal passes, isolation between the terminals can be secured.

Similarly, T28 is used as a terminal electrode connected to the transmission terminal DPTx, and T29 is used as the second control power supply terminal Vc2.
T30 is the second receiving terminal AR
The same effect can be obtained by using the terminal electrode connected to x.

In addition, T21, T23, T27, T31
Is a ground terminal electrode for connecting to, for example, the ground electrode of the main substrate of the mobile phone, and T22 is the third receiving terminal DR.
The terminal electrode connected to x, and T32 is the first receiving terminal E
The terminal electrode is connected to Rx. As a result, the interference of signals in the adjacent reception frequency band between the first reception terminal ERx and the second reception terminal ARx, and the third reception terminal D
It is possible to prevent interference of signals in the reception frequency bands that are close to each other between Rx and the fourth reception terminal PRx.

As described above, according to the third embodiment, by realizing the high frequency switch as a laminated body by using the dielectric, it is possible to contribute to the miniaturization and the height reduction of the device. Further, by using a strip line having a narrow line width as an inductor for connecting to a common control power supply terminal, it is possible to form a small area, and further it is possible to prevent interference with other elements. Further, since the input / output terminal and the ground electrode of the high frequency switch are all gathered on the back surface of the laminated body through the via holes, it is possible to reduce the mounting area when mounting on the main board of the electronic device.

In the above description, the diodes are used to switch the paths, but other elements may be used to switch the paths.

It goes without saying that the present invention includes high-frequency radio equipment using the high-frequency switch of the present invention.

[0105]

According to the present invention, it is possible to provide a small-sized high-frequency switch compatible with a plurality of bands and a high-frequency wireless device.

[Brief description of drawings]

FIG. 1 is a block diagram of a high frequency switch according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram of the high frequency switch according to the first embodiment of the present invention.

FIG. 3 is a block diagram of a high frequency switch according to a second embodiment of the present invention.

FIG. 4 is a circuit diagram of a high frequency switch according to a second embodiment of the present invention.

5A is an explanatory diagram of a high frequency switch (front side) according to a third embodiment of the present invention, and FIG. 5B is an explanatory diagram of a high frequency switch (back side) according to a third embodiment of the present invention.

FIG. 6 is an exploded perspective view of a part of a high frequency switch according to a third embodiment of the present invention.

FIG. 7 is an exploded perspective view of a part of the high frequency switch according to the third embodiment of the present invention.

FIG. 8 is a block diagram of a conventional high frequency switch.

FIG. 9 is an explanatory diagram of corresponding frequency bands of EGSM, AMPS, DCS, and PCS.

[Explanation of symbols]

1, 2 switch circuit (transmission / reception switching circuit) 3 demultiplexing circuit 20 antenna terminals 21,22,23,24 Internal terminals 12,13 Low-pass filter (LPF)

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hideaki Nakakubo             55-12 Ohsumihama, Kyotana-shi, Kyoto Prefecture Matsushita Nitto             Denki Co., Ltd. (72) Inventor Toru Yamada             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 5K011 BA03 DA22 DA27 DA29 FA01                       JA01 KA01

Claims (22)

[Claims] 1. A high-frequency switch having a plurality of signal paths corresponding to four frequency bands, comprising: a demultiplexing unit that demultiplexes a transmission signal and a reception signal of the four frequency bands according to frequencies. And a plurality of filters arranged in the signal path, the first and second transmission / reception switching means for switching to any one of the signal paths Means is connected to the demultiplexing means, and the first transmission / reception switching means has a first common transmission end for transmission signals of the first frequency band and the second frequency band as switching targets. A first input end for the received signal in the first frequency band and a second receiving end for the received signal in the second frequency band are connected to each other and configured with one input and three output ports The second transmission / reception switching means is As a switching target, a second common transmission end for transmission signals in the third frequency band and the fourth frequency band, and a third reception end for reception signals in the third frequency band A high-frequency switch, which is connected to a fourth receiving end for a received signal in the fourth frequency band and is configured by one input and three output ports. 2. A plurality of control power supplies for switching on / off states of a plurality of diodes of the first and second transmission / reception switching means, and the first common transmission end in the first transmission / reception switching means. The high-frequency switch according to claim 1, wherein the side and the fourth receiving end side of the second transmission / reception switching unit are controlled by a first common control power supply. 3. A plurality of control power supplies for switching ON / OFF states of a plurality of diodes of the first and second transmission / reception switching means, and the second reception end side of the first transmission / reception switching means. 3. The high frequency switch according to claim 2, wherein the second common transmission end side of the second transmission / reception switching means is controlled by a second common control power supply. 4. The first transmission / reception switching means has a first diode whose anode is connected to the first common transmission end and whose cathode is connected to the demultiplexing means. In the second transmission / reception switching means, its anode is the fourth
A second diode connected to the receiving end of the second diode, the cathode of which is connected to the demultiplexing means, the first inductor being connected to the anode of the first diode, and the anode of the second diode being connected to the anode of the first diode. A second inductor is connected to the first and second inductors, the first and second inductors are grounded via a first capacitor, and are connected to a first common control terminal for the first common control power supply. The high frequency switch according to claim 3, which is connected. 5. The second transmission / reception switching means has a third diode whose anode is connected to the second common transmission end and whose cathode is connected to the demultiplexing means. In the first transmission / reception switching means, the anode is the second
A fourth diode connected to the receiving end of the fourth diode, the cathode of which is connected to the demultiplexing means, the third inductor being connected to the anode of the third diode, and the anode of the fourth diode being connected to the anode of the third diode. Is connected to a fourth inductor, the third and fourth inductors are grounded via a second capacitor, and are connected to a second common control terminal for the second common control power supply. The high frequency switch according to claim 4, which is connected. 6. The first and second transmission / reception switching means,
A plurality of strip lines and a plurality of capacitors that constitute the plurality of filters and the demultiplexing unit are formed on a plurality of dielectric layers as an electrode pattern, and the plurality of strip lines are provided between the dielectric layers. And a via hole conductor for forming the plurality of capacitors is formed, and the first and second transmission / reception switching means, the plurality of filters, and the laminated body formed by laminating the dielectric layers. The high frequency switch according to claim 5, wherein at least one of a diode, a capacitor, a resistor, and an inductor for configuring the demultiplexing unit is installed. 7. A first ground electrode pattern is disposed inside the laminated body, wherein the first ground electrode pattern includes a first strip line forming the first inductor and the second inductor. 7. The high-frequency switch according to claim 6, wherein the second strip line that configures the second strip line is arranged so as to insert the first ground electrode pattern in the stacking direction of the stacked body. 8. A second ground electrode pattern is disposed inside the laminated body, wherein the second ground electrode pattern includes a third strip line forming the third inductor, and the fourth inductor. 8. The high frequency switch according to claim 7, wherein the fourth strip line forming the second ground electrode pattern is arranged so as to be inserted in the stacking direction of the stacked body. 9. The first ground electrode pattern and the second ground electrode pattern arranged in the laminate,
The high frequency switch according to claim 8, which is the same. 10. A first constituting the first inductor
7. The high frequency switch according to claim 6, wherein the strip line and the second strip line forming the second inductor are arranged so as not to overlap in the stacking direction. 11. A third component of the third inductor.
7. The high frequency switch according to claim 6, wherein the strip line and the fourth strip line forming the fourth inductor are arranged so as not to overlap with each other in the stacking direction. 12. The first strip line, the second strip line, the third strip line,
And the electrode widths of the fourth strip line are the first strip line, the second strip line,
Thinner than the electrode widths of the strip lines other than the third strip line and the fourth strip line,
The high frequency switch according to claim 8. 13. A first transmitting terminal electrode connected to the first common transmitting end, a second transmitting terminal electrode connected to the second common transmitting end, and the first receiving terminal. End, the second receiving end, the third receiving end, and the fourth receiving end, respectively, a first receiving terminal electrode, a second receiving terminal electrode, and a third receiving terminal electrode. A fourth receiving terminal electrode, first and second control terminal electrodes respectively connected to the first and second control terminals, and electrically connected to the first ground electrode pattern. A plurality of ground terminal electrodes are formed on the bottom surface of the laminate, and the first control terminal electrode is disposed between the first transmission terminal electrode and the fourth reception terminal electrode. The high frequency switch according to claim 7. 14. The high frequency switch according to claim 13, wherein a second control terminal electrode is arranged between the second transmitting terminal electrode and the second receiving terminal electrode. 15. The high frequency switch according to claim 13, wherein at least one of the plurality of ground terminal electrodes is arranged between the first receiving terminal electrode and the second receiving terminal electrode. 16. The high frequency switch according to claim 13, wherein at least one of the plurality of ground terminal electrodes is arranged between the third receiving terminal electrode and the fourth receiving terminal electrode. 17. A component for demultiplexing a received signal and a transmitted signal into a received signal and a transmitted signal having a frequency lower than a predetermined frequency and a received signal and a transmitting signal having a frequency higher than the predetermined frequency. Wave means, all or part of a plurality of frequency bands lower than the predetermined frequency, a transmission path for transmitting a transmission signal, and a plurality of frequency bands lower than the predetermined frequency, First transmission / reception switching means for switching a reception path for transmitting a reception signal according to a frequency, and a transmission signal for all or a part of at least one frequency band higher than the predetermined frequency. And a reception path for transmitting a reception signal according to each frequency of at least one frequency band higher than the predetermined frequency. Second transmission / reception switching means, one of the transmission path and the reception path which is a switching target of the first transmission / reception switching means, and a switching target of the second transmission / reception switching means. A common control terminal for controlling any one of the transmission path and the reception path so as to connect to the demultiplexing means at the same time, The high-frequency switch in which the one path of the transmission / reception switching means and the one path of the second transmission / reception switching means have a reverse relationship for transmission and reception. 18. A component for demultiplexing a received signal and a transmitted signal into a received signal and a transmitted signal having a frequency lower than a predetermined frequency and a received signal and a transmitting signal having a frequency higher than the predetermined frequency. A wave means, a transmission path for transmitting a transmission signal of all or a part of at least one frequency band lower than the predetermined frequency, and at least one frequency band lower than the predetermined frequency. A first transmission / reception switching means for switching a reception path for transmitting a reception signal corresponding to each frequency, and transmission of all or some of a plurality of frequency bands higher than the predetermined frequency. A transmission path for transmitting a signal and a reception path for transmitting a reception signal according to each frequency of a plurality of frequency bands higher than the predetermined frequency are switched. Second transmission / reception switching means, one of the transmission path and the reception path which is a switching target of the first transmission / reception switching means, and a switching target of the second transmission / reception switching means. A common control terminal for controlling any one of the transmission path and the reception path so as to connect to the demultiplexing means at the same time, The high-frequency switch in which the one path of the transmission / reception switching means and the one path of the second transmission / reception switching means have a reverse relationship for transmission and reception. 19. The common control terminal comprises a transmission path for transmitting a transmission signal of the first transmission / reception switching means, and a reception path for transmitting a reception signal of the second transmission / reception switching means. A first common control terminal for controlling so as to connect to the demultiplexing means at the same time, a transmission path for transmitting a transmission signal of the second transmission / reception switching means, and a reception of the first transmission / reception switching means. The high frequency switch according to claim 17, further comprising: a reception path for transmitting a signal, and a second common control terminal for controlling the reception path to be connected to the demultiplexing means at the same time. 20. The common control terminal includes a transmission path for transmitting a transmission signal of the first transmission / reception switching means, and a reception path for transmitting a reception signal of the second transmission / reception switching means. A first common control terminal for controlling so as to connect to the demultiplexing means at the same time, a transmission path for transmitting a transmission signal of the second transmission / reception switching means, and a reception of the first transmission / reception switching means. The high frequency switch according to claim 18, further comprising: a reception path for transmitting a signal, and a second common control terminal for controlling the reception path so as to be simultaneously connected to the demultiplexing means. 21. The radio frequency switch according to claim 1, a receiving device connected to the radio frequency switch for processing a reception signal, and a transmission device connected to the radio frequency switch for generating a transmission signal. And a high-frequency wireless device equipped with. 22. Demultiplexing means for demultiplexing a transmission signal and a reception signal of four frequency bands according to frequencies, and a plurality of signal paths connected to the demultiplexing means and corresponding to the four frequency bands. A method for operating a high-frequency switch, comprising: first and second transmission / reception switching means for switching to any one of the signal paths, and a plurality of filters arranged in the signal path. Switching means includes a first common transmitting end for transmitting signals in the first frequency band and the second frequency band, and a first receiving end for receiving signals in the first frequency band. A second for the received signal in the second frequency band
And a second common transmission end for transmitting signals of the third frequency band and the fourth frequency band, and the third transmission / reception switching means, A third receiving end for receiving signals in the frequency band and a fourth receiving end for receiving signals in the fourth frequency band
And a step of switching the receiving end of the high frequency switch.