JP2003298034A - Solid-state imaging device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state imaging device having a structure capable of improving sensitivity and being inexpensively and stably manufactured, and a method of manufacturing the same. In each pixel, a hole is formed in a transparent film formed above a light receiving sensor portion in each pixel, at a position directly above the light receiving sensor portion, and an organic polymer having a higher refractive index than the transparent film is formed. Are embedded in the holes to form a solid-state imaging device. In addition, a color filter is constituted by the organic polymer 10 to which a dye is added. The hole 1 is formed in a portion of the transparent film 9 immediately above the light receiving sensor 2.
3; a step of filling the holes 13 to form the organic polymer 10; and a step of performing etch-back on the organic polymer 10 to flatten the surface. The device is manufactured.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device having a structure in which a hole having a high refractive index material embedded therein is provided immediately above a light receiving sensor unit, and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, various proposals have been made for the purpose of improving the sensitivity characteristics of solid-state image pickup devices.

As one of them, for example, Japanese Patent Application Laid-Open No. 10-32
6885, JP-A-11-121725, etc.,
There has been proposed a structure in which a hole is formed immediately above the light receiving sensor unit and a high refractive index material is filled in the hole to form a waveguide structure.

In the case of manufacturing such a structure, a transparent film (interlayer insulating film, passivation film, etc.) having a low refractive index formed above the light receiving sensor section is directly above the light receiving sensor section. A method is employed in which a hole is formed at a position and then a plasma SiN film, for example, as a high refractive index material is embedded in the hole.

[0005]

However, as the solid-state image pickup device is miniaturized, the area of the light receiving sensor portion becomes smaller, and the aspect ratio (ratio of width to depth) of the hole portion becomes larger. Since the aspect ratio of the hole becomes large in this manner, the coverage of the plasma SiN film filling the hole is deteriorated, and there is a problem that a void is generated.

Further, in the case where a color filter film is further provided to the solid-state image pickup device having the above-mentioned structure, an additional step of forming the color filter film after forming the waveguide structure is required. Therefore, there is a problem that the number of steps increases and the manufacturing cost increases.

In order to solve the above-mentioned problems, the present invention provides a solid-state image pickup device having a structure capable of improving sensitivity and being manufactured inexpensively and stably, and a manufacturing method thereof. Is.

[0008]

A solid-state image sensor according to the present invention comprises a large number of light-receiving sensor portions forming pixels, and a transparent film is formed above each light-receiving sensor portion in each pixel. A hole is formed immediately above the light receiving sensor unit, and an organic polymer having a higher refractive index than the transparent film is embedded in the hole to form a waveguide.

According to the method of manufacturing a solid-state image pickup device of the present invention, a large number of light-receiving sensor parts forming pixels are formed, and a transparent film is formed above each light-receiving sensor part in each pixel. , A step of forming a transparent film, and then forming a hole in the transparent film immediately above the light receiving sensor section, and filling the hole with an organic polymer having a higher refractive index than the transparent film. And a step of flattening the surface by etching back the organic polymer.

According to the above-mentioned structure of the solid-state image pickup device of the present invention, an organic polymer having a refractive index higher than that of the transparent film is embedded in the hole formed in the transparent film immediately above the light receiving sensor part. Due to the construction of the wave tube, the organic polymer in the hole has a higher refractive index than the transparent film, so that the light incident on the wall surface of the hole can be reflected and directed to the light-receiving sensor section, and the sensitivity can be improved. It will be possible to improve. Also,
By embedding the hole that constitutes the waveguide with an organic polymer, the embedding property and coverage when embedding in the hole are improved, so that a structure that can be easily and highly reliable manufactured is obtained. There is.

According to the above-described method for manufacturing a solid-state image sensor of the present invention, a hole is formed in a portion of the transparent film immediately above the light receiving sensor portion, and the hole is filled to have a refractive index higher than that of the transparent film. By forming an organic polymer with high efficiency, it is possible to reflect the light incident on the wall surface of the hole and direct it toward the light receiving sensor part, and to manufacture the above-mentioned waveguide structure that can improve the sensitivity. can do. At this time, since the organic polymer is formed by filling the pores, the filling property into the pores and the coverage are improved, and therefore, the manufacturing can be easily performed with high reliability. Further, by performing etch back on the organic polymer to flatten the surface, it is possible to fill the pores of the transparent film with the organic polymer and form a structure in which the transparent film and the organic polymer have a flat surface. .

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, a large number of light receiving sensor portions forming pixels are formed, and a transparent film is formed above each light receiving sensor portion in each pixel. The solid-state imaging device has a hole formed at a position, and an organic polymer having a higher refractive index than the transparent film is embedded in the hole to form a waveguide.

Further, according to the present invention, in the above solid-state image pickup device, a coloring film is formed by adding a dye to an organic polymer, and the coloring film forms a color filter for a light receiving sensor portion of each pixel. To do.

Further, according to the present invention, in the above solid-state image pickup device, the organic polymer has a refractive index of 1.5 or more.

Further, according to the present invention, in the above solid-state image pickup device, the transparent film is formed by forming an inorganic transparent film on an organic film.

The present invention is a method for manufacturing a solid-state image pickup device in which a large number of light receiving sensor portions forming pixels are formed and a transparent film is formed above the light receiving sensor portion in each pixel. Forming, and then forming a hole in a portion of the transparent film immediately above the light receiving sensor section; and a step of filling the hole and forming an organic polymer having a higher refractive index than the transparent film over the entire surface, And a step of flattening the surface by performing etch back on the organic polymer.

Further, according to the present invention, in the method for manufacturing a solid-state image pickup device, a dye is added to an organic polymer.

According to the present invention, in the method for manufacturing a solid-state image pickup device, in the step of forming a transparent film, an organic film is formed and an inorganic transparent film is formed thereon.

First, an outline of the present invention will be described prior to the description of specific embodiments of the present invention. In the present invention, a hole is formed in the transparent film at a position directly above the light-receiving sensor part that constitutes each pixel of the solid-state image sensor, and the hole is filled to form a high refractive index material layer made of an organic polymer. Configure a waveguide. The high refractive index material layer is formed of a material having a higher refractive index than the transparent film (low refractive index material layer) around the hole.

Then, as shown in the schematic view of FIG. 11, the holes formed in the transparent film (low refractive index material layer) 52 are filled,
A high refractive index material layer 53 made of an organic polymer is formed.
As a result, the incident light 55 focused by the on-chip lens 54 can be totally reflected at the interface between the transparent film (low refractive index material layer) 52 and the high refractive index material layer 53, that is, the wall surface of the hole. The incident light 55 incident on the wall surface of the part can also be directed to the light receiving sensor part 51. Therefore, the sensitivity characteristic of the solid-state image sensor can be improved.

As a material having a low refractive index which constitutes the transparent film (low refractive index material layer), a SiO ₂ (silicon oxide) -based material (refractive index: about 1.45) or a fluorine-based transparent resin (refractive index: About 1.35) can be used. SiO ₂
As the system material, SiO ₂ system oxide film such as PSG, B
-PSG, plasma SiO, SOG, etc. can be used. As the fluorine-based transparent resin, for example, CYTOP (trade name) manufactured by Asahi Kasei Corporation can be used.

Polyimide resin (refractive index: about 1.75) can be used as the organic polymer of the high refractive index material layer forming the waveguide.

As the organic polymer used as the high refractive index material, for example, the following polymers can be used in addition to the above polyimide resin. Polybenzyl methacrylate (refractive index 1.568) Polyphenyl methacrylate (refractive index 1.5706) Polydiallyl phthalate (refractive index 1.572) Polystyrene (refractive index 1.59) Poly-p-bromophenyl methacrylate (refractive index 1.59)
5904) Polypentachlorophenyl methacrylate (refractive index 1.
608) Poly-o-chlorostyrene (refractive index 1.6098) Poly-α-naphthyl methacrylate (refractive index 1.641
0) Polyvinylnaphthalene (refractive index 1.6818) Polyvinylcarbazole (refractive index 1.683) Polypentabromophenyl methacrylate (refractive index 1.83)
71)

As described above, an organic polymer having a refractive index higher than that of the low refractive index material layer around the hole, preferably an organic polymer having a refractive index of 1.5 or more is used to fill the hole with a high refractive index material layer. To form.

Each of the above-mentioned organic polymers can be applied by spin coating, and has good embedding properties and coverage for the pores. Therefore, when the solid-state imaging device is miniaturized, it is possible to suppress the generation of voids in the holes, so that the miniaturized solid-state imaging device can be manufactured with high reliability.

Furthermore, by adding a dye to the polyimide resin or the above-mentioned organic polymer to form a colored film,
With this colored film, it is possible to provide a color filter corresponding to the light receiving sensor section of each pixel. That is, the colored film can serve as both the waveguide and the color filter.

The dye added to the organic polymer is appropriately selected from dyes such as yellow, cyan, magenta, green, red and blue depending on the constitution of the color filter array. Then, for example, when forming a primary color filter array, green, red, and blue patterns are formed, and when forming a complementary color filter array, yellow, cyan, magenta, and green patterns are formed. Form.

The spectral characteristics of the color filter are adjusted by the concentration of the dye in the organic polymer such as the polyimide resin and the amount of etch back in the dry etching process of the colored film.

As described above, by forming a colored film formed by adding a dye to an organic polymer, the high refractive index material layer constituting the waveguide is also used as a color filter, and these are simultaneously formed. Therefore, the number of steps can be reduced. Therefore, it is possible to inexpensively realize a solid-state imaging device having a color filter and a waveguide.

When an organic film such as a fluorine-based transparent resin is used as the transparent film (low refractive index material layer) around the hole where the colored film made of an organic polymer is embedded, the organic film is formed on the organic film. It is desirable to provide an inorganic transparent film to serve as an etching stopper when the colored film in the hole is etched and removed.

Next, specific embodiments of the present invention will be described.

FIG. 1 shows a schematic configuration diagram (cross-sectional view) of a solid-state image pickup device as an embodiment of the present invention. The present embodiment is a case where the present invention is applied to a CCD solid-state image pickup device and a SiO ₂ based material is used as a low refractive index material. This solid-state image sensor has a semiconductor substrate 1 and a light receiving sensor section 2
And transfer channels 3 are formed respectively, and a read gate or a channel stop region (not shown) is formed between the light receiving sensor unit 2 and the transfer channel 3.
A transfer electrode 5 is formed above the transfer channel 3 via a gate insulating film 4. A thin insulating film 6 is formed so as to cover the transfer electrode 5, and an interlayer insulating film 7 is formed so as to cover the transfer electrode 5 and extend over the light receiving sensor portion 2. Further, a light-shielding film 8 is formed on the interlayer insulating film 7 to prevent light from entering the transfer electrode 5. The light-shielding film 8 is provided with an opening on the light-receiving sensor unit 2 so that light is incident on the light-receiving sensor unit 2.

A thick transparent film 9 is formed on the light shielding film 8. The transparent film 9 is formed of a low refractive index material such as SiO ₂ material.

Further, the transfer channel 3 and the transfer electrode 5 constitute a charge transfer section having a CCD structure.

In this embodiment, the hole 13 is formed in the portion of the transparent film 9 made of a material having a low refractive index directly above the light receiving sensor 2.
Is formed, and the hole 13 is filled with a high refractive index material to form a waveguide. Further, as a high refractive index material forming the waveguide, a colored film made of an organic polymer (a high refractive index organic polymer such as the polyimide resin described above) to which a dye corresponding to the color of a color filter formed in a pixel is added. 10 is used. Then, this colored film 10
Is embedded in the hole 13 to form a waveguide.

In this case, the refractive index of the colored film 10 is higher than that of the transparent film 9, and the light incident on the wall surface of the hole 13 is reflected by this wall surface as in the case shown in FIG. Toward the light receiving sensor unit 2.

A transparent flattening film 11 is formed on the transparent film 9 and the colored film 10 to flatten the surface, and an on-chip lens 12 is formed thereon.

According to the above-described solid-state image pickup device of the present embodiment, the colored film 10 embedded in the hole 13 and made of an organic polymer (for example, polyimide resin) to which a dye is added,
It can function as a color filter and a waveguide in a solid-state image sensor. That is, in the conventional structure, the embedding property of the plasma SiN film in the hole is deteriorated,
Although the number of steps is inevitably increased to form the color filter layer after forming the waveguide structure and the manufacturing cost is increased, in the present embodiment, the colored film 10 is inexpensive and the hole portion is formed. It becomes possible to form the embedding property in 13 and the coverage well.

Therefore, according to this embodiment, it is possible to suppress the manufacturing cost and realize a highly reliable solid-state image pickup device.

Next, a method of manufacturing the above-described solid-state image pickup device of the present embodiment will be described. First, each region such as the light receiving sensor 2 portion and the transfer channel 3 in the semiconductor substrate 11, each layer from the transfer electrode 5 to the light shielding film 8, and other necessary layers such as a passivation film are formed.

Next, as shown in FIG. 2A, a transparent film 22 made of a SiO ₂ material is entirely formed so as to cover the surface of the lower layer (including each layer from the substrate to the light shielding film) 21. 2A and the subsequent figures, the details of the transfer electrode 5 and the light-shielding film 8 of each pixel are omitted, and a schematic cross-sectional view showing a region for three pixels is shown. Subsequently, as shown in FIG. 2B, a photoresist 23 having a predetermined pattern is formed on the transparent film 22. Next, as shown in FIG. 2C, the transparent film 22 is dry-etched using the photoresist 23 as a mask. Then, as shown in FIG. 2D, the photoresist 23 is removed to form a hole portion 24 serving as a waveguide on the light receiving sensor portion (not shown).

From the state shown in FIG. 2D, in order to form a predetermined color filter array, a colored film of each color made of an organic polymer to which a dye corresponding to each color forming the color filter array is added is formed in the hole 24. To form. Hereinafter, a case of forming color filters of three colors (for example, red, green, and blue) in the illustrated three pixels will be described.

Next, as shown in FIG. 2E, a first coating made of an organic polymer such as a polyimide resin to which the dye of the first color (for example, red) has been added by spin coating to cover the hole 24. The colored film 25 is formed. Subsequently, as shown in FIG. 3F, the entire surface of the first colored film 25 is dry-etched by dry etching so that the upper surface becomes a substantially flat surface. As a result, the first colored film 25 remains in each hole 24 in a buried state.

Next, as shown in FIG. 3G, some of the pixels in the first colored film 25 embedded in the holes 24, as shown in FIG.
In G, the transparent film 22 covering the leftmost pixel and surrounding it
A photoresist 26 is formed in a pattern that overlaps with. Subsequently, as shown in FIG. 3H, using the photoresist 26 as a mask, the first pixels embedded in the holes 24 of the remaining pixels, that is, the central pixel and the rightmost pixel in FIG. 3H.
The colored film 25 is subjected to dry etching. At this time, the photoresist 26 has a film thickness T even after dry etching.
The film thickness T of the photoresist 26 shown in FIG. 3G is selected so that about '(<T) remains. Then, as shown in FIG. 3I, the photoresist 26 is removed.

Next, as shown in FIG. 3J, a second colored film made of an organic polymer such as a polyimide resin to which the second dye (for example, green) is added so as to cover the entire surface by spin coating. 27 is formed. Subsequently, as shown in FIG. 4K, the entire surface of the second colored film 27 is dry-etched by dry etching so that the upper surface becomes a substantially flat surface. As a result, the second colored film 27 remains in the holes 24 of the central pixel and the rightmost pixel.

Next, as shown in FIG. 4L, a part of pixels of the first colored film 25 embedded in the hole 24 and the second colored film 27 embedded in the hole 24, as shown in FIG. 4L. Then, a photoresist 28 is formed in a pattern covering the central pixel and overlapping the transparent film 22 around the central pixel. Subsequently, as shown in FIG. 4M, using the photoresist 28 as a mask, dry etching is performed on the remaining pixel, that is, the second colored film 27 embedded in the hole 24 of the rightmost pixel in FIG. 4M. . At this time as well, the film thickness at the time of forming the photoresist 28 is selected so that the photoresist 28 remains after the dry etching. Then, as shown in FIG. 4N, the photoresist 28 is removed.

Next, as shown in FIG. 4O, a third colored film 29 made of an organic polymer such as a polyimide resin to which a third dye (for example, blue) has been added to cover the entire surface by spin coating. To form. Then, FIG. 5P
As shown in FIG. 7, the third colored film 29 is etched back by dry etching so that the upper surface becomes a substantially flat surface. As a result, the third colored film 29 remains in the hole portion 24 of the rightmost pixel, and the colored films 25, 27, and 29 of three colors are filled in the three pixels, respectively, and the waveguide also serving as a color filter is provided. A tube is formed.

Thereafter, as shown in FIG. 5Q, a transparent flattening film 30 made of resin is formed so as to cover the surface. continue,
As shown in FIG. 5R, the on-chip lens 31 is formed. In FIG. 5R, the reference numerals in parentheses correspond to the same reference numerals 9, 11, 12, and 13 in FIG. In this way, the solid-state image sensor of this embodiment shown in FIG. 1 can be manufactured.

Subsequently, as another embodiment of the present invention,
FIG. 6 shows a schematic configuration diagram (cross-sectional view) of the solid-state imaging device. In the above-mentioned embodiment, the SiO ₂ material is used for the low refractive index transparent film, but in this embodiment, the fluorine resin is used for the low refractive index transparent film.

In the solid-state imaging device of this embodiment, the transparent film forming the outer wall of the hole 13 of the waveguide is the first transparent film 15 made of fluorine resin and the inorganic material film thereon. Second transparent film 1 made of (for example, plasma SiO film)
6 and a laminated film. Other configurations are shown in FIG.
Since it is the same as the solid-state image pickup device of the previous embodiment shown in, the same reference numerals are given and duplicate description is omitted.

According to the solid-state image pickup device of the present embodiment, as in the solid-state image pickup device of the previous embodiment, the coloring film 10 made of a dye-added organic polymer (for example, polyimide resin) is used for the solid-state image pickup device. It is possible to function as a color filter and a waveguide in the above, and it is possible to form the colored film 10 at low cost and to have good embeddability and coverage in the hole 13. Therefore, it is possible to suppress the manufacturing cost and realize a highly reliable solid-state imaging device.

The solid-state image sensor according to this embodiment can be manufactured as follows. First, each region such as the light receiving sensor section and the transfer channel in the semiconductor substrate, the transfer electrode,
Each layer up to the light-shielding film and other passivation film is formed. Next, as shown in FIG. 7A, a first transparent film 41 made of a fluorinated resin is formed over the entire surface so as to cover the surface of the lower layer (including each layer from the substrate to the light shielding film) 21. A second transparent film 42 made of an inorganic material film (for example, a plasma SiO film) is formed on the entire surface of the transparent film 41. 7A and the subsequent figures, a schematic cross-sectional view showing a region for three pixels is shown by omitting the details of the transfer electrodes and the light-shielding film of each pixel. Subsequently, as shown in FIG. 7B, a photoresist 23 having a predetermined pattern is formed on the second transparent film 42. Further, as shown in FIG. 7C, the first transparent film 41 made of a fluororesin and the second transparent film 42 made of an inorganic material are simultaneously processed by dry etching. Then, as shown in FIG. 7D, the photoresist 23 is removed.

In this embodiment, the two-layer transparent film 4 is used.
1 (15) and 42 (16) are laminated. This is because the etching characteristics of the fluorine-based resin forming the first transparent film 41 (15) are close to those of the organic polymer of the colored film in the dry etching process of the colored film made of an organic polymer such as a polyimide resin. This is for ensuring and making the second transparent film 42 (16) act as an etching stopper.

Thereafter, as shown in FIGS. 7E to 10R, in the same manner as the previous embodiment shown in FIGS. 2E to 5R, three color pigments are added so as to fill the inside of the hole 24. By forming the colored films 25, 27, and 29 described above to form a waveguide, a solid-state imaging device can be manufactured. Incidentally, FIG.
In 0R, the code in parentheses is the same code 11, 1 in FIG.
It corresponds to 2, 13, 15, and 16.

In each of the above embodiments, the gate insulating film 4 and the interlayer insulating film are provided between the surface of the semiconductor substrate 1 on which the light receiving sensor portion 2 is formed and the bottom of the hole 13 of the waveguide. Although there is the film 7, the layer configuration between the surface of the substrate and the bottom of the hole is not limited to this. For example, a structure having only the gate insulating film 4 or a structure provided with an etching stopper film (for example, SiN film) is possible. Further, although the opening of the light-shielding film 8 on the light-receiving sensor unit 2 coincides with the wall surface of the hole 13,
The invention is not limited to this, and the opening of the light shielding film may be outside the wall surface of the hole. If the opening of the light shielding film is aligned with the wall surface of the hole, there is an advantage that the opening and the hole can be formed by etching using the same mask.

Further, in each of the above embodiments, the CCD
Although the present invention is applied to the solid-state imaging device, the present invention can also be applied to solid-state imaging devices having other configurations. For example, the present invention can be similarly applied to a solid-state image pickup device having a charge transfer section other than the CCD structure, a CMOS type solid-state image pickup device, or a MOS type solid-state image pickup device. Even in the solid-state imaging device having such a configuration, by applying the present invention to form a hole directly above the light receiving sensor unit and using an organic polymer as a high refractive index material filling the hole, the sensitivity is improved and the solid-state imaging is performed. The device can be miniaturized. Even in solid-state image pickup devices having other configurations, if a dye is further added to the organic polymer to form a colored film, the colored film also serves as a color filter to reduce the number of steps and reduce the manufacturing cost. It becomes possible to do.

Further, in the present invention, the high refractive index material for filling the hole of the waveguide is not limited to the structure using the coloring film to which the dye is added as in each of the above-described embodiments, but the dye is included. It also includes a configuration using a non-organic polymer. With such a configuration, the present invention can be applied to a solid-state image pickup device without a color filter array. In addition, it is possible to improve the embeddability and coverage of holes, improve sensitivity and reliability, and configure a solid-state imaging device that is highly reliable even when the device is miniaturized. You can In this case, since the color filter can be formed separately from the waveguide as in the conventional case, the conventional manufacturing process can be used as it is, and the reliability of the solid-state imaging device can be improved. It can also be improved.

When the above-mentioned organic polymer does not contain a dye or when the color filter has a single color (for example, when forming a line of each color of the color line sensor),
Since the step of removing the organic polymer or the colored film in the hole by etching (the step corresponding to FIG. 3G to FIG. 3H) is unnecessary, the waveguide is completed in the first etchback step corresponding to FIG. 2F. Even if the transparent film on the outer side of is formed of an organic film, a transparent film for an etching stopper is not required.

The present invention is not limited to the above-described embodiments, and various other configurations can be adopted without departing from the gist of the present invention.

[0060]

According to the present invention described above, by using an organic polymer in the high refractive index material layer functioning as a waveguide, the sensitivity can be improved and the solid-state image sensor can be manufactured with high reliability. It will be possible.

Further, if a coloring film is formed by adding a dye to the organic polymer, a solid-state image pickup device having a color filter can be manufactured at a low cost because the coloring film serves as both the waveguide and the color filter. It will be possible.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram (cross-sectional view) of a solid-state image sensor according to an embodiment of the present invention.

2A to 2E are process drawings showing a manufacturing process of the solid-state imaging device of FIG.

FIG. 3 is a process diagram showing a manufacturing process of the solid-state imaging device of FIGS.

4A to 4C are process drawings showing a manufacturing process of the solid-state imaging device of FIG.

5A to 5D are process drawings showing a manufacturing process of the solid-state imaging device of FIGS.

FIG. 6 is a schematic configuration diagram (cross-sectional view) of a solid-state image sensor according to another embodiment of the present invention.

7A to 7E are process drawings showing a manufacturing process of the solid-state imaging device of FIGS.

8A to 8J are process drawings showing manufacturing processes of the solid-state imaging device of FIGS.

9A to 9C are process diagrams showing a manufacturing process of the solid-state imaging device of FIG.

10A to 10C are process charts showing the manufacturing process of the solid-state imaging device of FIGS.

FIG. 11 is a diagram illustrating the operation of the waveguide.

[Explanation of reference numerals] 2 light receiving sensor section, 3 transfer channels, 5 transfer electrodes,
7 Interlayer insulating film, 8 Light-shielding film, 9,22 Transparent film, 10
Colored film, 11,30 Transparent flattening film, 12,31 On-chip lens, 13,24 Hole, 15,41 First
Transparent film, 16, 42 second transparent film, 25 first colored film, 27 second colored film, 29 third colored film

Claims (7)

[Claims] 1. A plurality of light receiving sensor portions forming a pixel are formed, and a transparent film is formed above each light receiving sensor portion in each pixel, and a hole is formed at a position directly above the light receiving sensor portion of the transparent film. Is formed, and an organic polymer having a refractive index higher than that of the transparent film is embedded in the hole to form a waveguide. 2. A coloring film is formed by adding a pigment to the organic polymer, and the coloring film forms a color filter for the light-receiving sensor portion of each pixel. The solid-state image sensor according to claim 1. 3. The solid-state image sensor according to claim 1, wherein the organic polymer has a refractive index of 1.5 or more. 4. The solid-state imaging device according to claim 1, wherein the transparent film is formed by forming an inorganic transparent film on an organic film. 5. A method for manufacturing a solid-state imaging device, comprising a plurality of light receiving sensor portions forming pixels, and a transparent film being formed above the light receiving sensor portion in each pixel, wherein the transparent film is formed. Then, a step of forming a hole in a portion of the transparent film immediately above the light receiving sensor section, and a step of filling the hole and forming an organic polymer having a higher refractive index than the transparent film over the entire surface. And a step of flattening the surface by performing etch back on the organic polymer. 6. The method for manufacturing a solid-state image sensor according to claim 5, wherein a dye is added to the organic polymer. 7. The method for manufacturing a solid-state image sensor according to claim 5, wherein in the step of forming the transparent film, an organic film is formed and an inorganic transparent film is formed on the organic film.