JP2003289149A - Light receiving module - Google Patents

Abstract

(57) [Problem] To provide a light receiving module capable of easily reducing the impedance of a power supply line and a signal line. SOLUTION: A die cap capacitor 41 has an electrode 42 on one surface side in contact with a mounting surface 12, and has four electrodes 43 to 45 arranged side by side on the other surface side. The die cap capacitor 41 is arranged such that the semiconductor light receiving element 31 (light receiving portion 32) arranged on the electrode 43 is located at the center of the mounting surface 12. The third electrode of the semiconductor light receiving element 31 is wire-bonded to the second electrode of the semiconductor electronic element 51. In the semiconductor electronic element 51, ground electrodes 57 are provided on both sides of the second electrode 53. The ground electrodes 57 are connected to the electrodes 44 and 45 located on both sides of the electrode 43 of the die cap capacitor 41 on which the semiconductor light receiving element 31 is arranged. Each of them is electrically connected to the mounting member 11 (mounting surface 12) via the corresponding one and grounded.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a light receiving module.

[0002]

2. Description of the Related Art As shown in FIG. 7, a light receiving module 101 includes a mounting member 111 and lead pins 121-12.
4, semiconductor light receiving element 131, die cap capacitor 141, semiconductor electronic element 151 and the like.

The mounting member 111 is made of a conductive material and has a mounting surface 112. Of the lead pins, the four lead pins 121 to 124 other than the lead pins (not shown) electrically connected to the mounting member 111 and the mounting member 111 are insulated by the glass member 125.

The semiconductor light receiving element 131 includes a light receiving portion 132.
And the first wire-bonded to the lead pin 121
Electrode 133, a second electrode 134, and a third electrode 135 that outputs a current signal from the light receiving unit 132.
Further, the semiconductor light receiving element 131 has the first electrode 13 at one end.
3 and a resistance element 136 electrically connected to the other end and connected to the second electrode 134 at the other end.

The die cap capacitor 141 has an electrode (not shown) in contact with the mounting surface on one surface side, and has two electrodes 142, 143 juxtaposed on the other surface side.
The semiconductor light receiving element 131 is disposed on the one electrode 142, and the second electrode 134 and the electrode 1 of the semiconductor light receiving element 131 are arranged.
42 and 42 are wire-bonded. The other electrode 1
43 is wire-bonded to the lead pin 122. Here, the resistance element 136 of the semiconductor light receiving element 131
The die cap capacitor 141 forms a CR filter, and serves as a decoupling filter for a power source applied to the semiconductor light receiving element 131.

The semiconductor electronic element 151 is for electrically processing the current signal output from the semiconductor light receiving element 131, and includes the first to fifth electrodes 152 to 156 and the mounting member 11.
1 (mounting surface 112) and a ground electrode 157 that is wire bonded. The first electrode 152 is for applying a power supply voltage (V _DD ) to the semiconductor electronic element 151, and is wire-bonded to the electrode 143 of the die cap capacitor 141. The second electrode 153 receives the current signal from the semiconductor light receiving element 131 and outputs the current signal from the semiconductor electronic element 1.
It is for input to 51 and is wire-bonded to the third electrode 135 of the semiconductor light receiving element 131. The third electrode 154 is for outputting a signal obtained by electrically processing the current signal output from the semiconductor light receiving element 131, and is wire-bonded to the lead pin 123. The fourth electrode 155 outputs a complementary signal whose phase is 180 ° different from the signal output from the third electrode 154, and is wire-bonded to the lead pin 124. The fifth electrode 156 is wire-bonded to the electrode of the die cap capacitor 161 arranged on the mounting surface 112.

The electrodes of the die cap capacitor 162 arranged on the mounting surface 12 are wire-bonded to the lead pins 122.

[0008]

The inventor is carrying out technical development in order to increase the operation speed of the light-receiving module having the above-described structure. Recently, there is a demand for increasing the operating speed of the light receiving module, and the inventors consider that a light receiving module that can realize a speed at which the signal frequency exceeds 2.5 GHz is required. In the region where the signal frequency exceeds 2.5 GHz, satisfactory characteristics cannot be obtained unless the impedance matching of the signal transmission line (signal line) between the components is considered. In addition, an unstable operation (oscillation) phenomenon due to a signal sneaking through the power supply path (power supply line) is likely to occur.

As a method for solving these problems, there is a reduction in impedance of the power supply line and a reduction in impedance of the signal line. Here, lowering the impedance means increasing the capacity of the decoupling capacitor of the power supply,
Alternatively, it means lowering the inductance of the line connected to the capacitor. To reduce the inductance, it is effective to wire a plurality of bonding wires in parallel. Further, the low impedance of the signal line can be realized by adopting a structure in which the periphery of this line is surrounded by a low impedance line such as a ground line or a power supply line. It is effective to perform this surrounding not only in the wire but also in the semiconductor electronic device.

However, in order to reduce the size of the light receiving module, it is necessary to make the mounting member small.
There is a restriction on the component mounting area of the mounting member. For this reason, it becomes difficult to mount many new parts. In addition, when surrounding the signal line with a low impedance line, since the wiring freedom is ensured in the semiconductor electronic element, surround the signal line with a low impedance line with a sufficient margin. However, it is difficult to surround the wire of the signal line with the wire of the ground line or the power line due to the problem of mutual interference between the wires when the wires are attached.

The present invention has been made in view of the above points, and an object thereof is to provide a light-receiving module capable of easily and reliably reducing the impedance of a signal line.

[0012]

A light receiving module according to the present invention includes a mounting member made of a conductive member and having a mounting surface, a light receiving section, and a signal output electrode for outputting a current signal from the light receiving section. A semiconductor light receiving element having, a signal input electrode for inputting a current signal, and a semiconductor electronic element having a ground electrode provided on both sides of the signal input electrode,
A die cap capacitor having an electrode in contact with the mounting surface on one surface side and having at least three electrodes juxtaposed on the other surface side; and the semiconductor light receiving element has at least three electrodes of the die cap capacitor. Of the die-cap capacitor is arranged such that the semiconductor light-receiving element is located in the center of the mounting surface, and the semiconductor electronic element has a signal input electrode whose signal output is the semiconductor light-receiving element. It is arranged on the mounting surface adjacent to the die cap capacitor so as to face the electrode, the signal output electrode of the semiconductor light receiving element and the signal input electrode of the semiconductor electronic element are electrically connected, and the ground electrode of the semiconductor electronic element is connected. Is electrically connected to the electrode on the corresponding side of the electrodes located on both sides of the electrode on which the semiconductor light receiving element of the die cap capacitor is arranged. , It is characterized in that the electrode and the mounting surface of the electrically-connected die capacitance capacitor to the ground electrode of the semiconductor electronic element is electrically connected.

In the light receiving module according to the present invention, ground electrodes are provided on both sides of the signal input electrode in the semiconductor electronic element, and the ground electrodes are electrodes located on both sides of the electrode on which the semiconductor light receiving element of the die cap capacitor is arranged. Electrically connected to the mounting member (mounting surface) via
It will be grounded. The wiring length between the ground electrode and the electrode of the die cap capacitor and the wiring length between the electrode of the die cap capacitor and the mounting member are the same as when the ground electrode is directly grounded to the mounting member. It is shorter than that. As a result, the influence of the inductance component of the wiring itself can be suppressed to be low, and the wiring is less likely to be deformed, so that it is possible to prevent the wiring from contacting each part.
As a result, a structure in which the signal line for sending a current signal from the semiconductor light receiving element to the semiconductor electronic element is surrounded by the ground line is realized, and the impedance of the signal line can be easily and reliably reduced.

Further, the die cap capacitor further has an electrode at the outermost position with respect to at least three electrodes arranged in parallel on the other surface side, and the outermost electrode and the semiconductor electron are provided. It is preferable that the power supply electrode of the element is electrically connected. When configured in this way, the die cap capacitor functions as a coupling capacitor for the power supply applied to the semiconductor electronic element,
The impedance of the power supply line can be reduced.

Further, the semiconductor electronic device has a pair of signal output electrodes for outputting a signal, and the signal output electrodes are respectively close to the sides orthogonal to one side where the signal input electrodes are arranged close to each other. It is preferable that they are arranged. With such a configuration, the wiring length for extracting a signal from the signal output electrode is shortened, and the influence of the inductance component of the wiring itself can be suppressed to a low level.

The semiconductor light receiving element includes a power supply electrode for applying a power supply voltage to the light receiving portion, an electrode electrically connected to the electrode of the die cap capacitor on which the semiconductor light receiving element is arranged, the electrode and the power supply. It is preferable to further include a resistance element connected in series with the electrode. With such a configuration, the die cap capacitor and the resistance element form a CR filter, and stable operation of the semiconductor light receiving element can be realized.

[0017]

DETAILED DESCRIPTION OF THE INVENTION A light receiving module according to an embodiment of the present invention will be described with reference to the drawings. In the description, the same elements or elements having the same function will be denoted by the same reference symbols, without redundant description.

(First Embodiment) FIG. 1 is a plan view showing a light receiving module, and FIG. 2 is a sectional view showing the same light receiving module. The light receiving module 1 is used, for example, in a receiving subassembly (ROSA) of an optical communication module, and as shown in FIGS. 1 and 2, a mounting member 11 and a plurality of (five in this embodiment) members. Lead pins 21 to 25, semiconductor light receiving element 31, die cap capacitor (parallel plate capacitor) 41, semiconductor electronic element 5
1 and so on.

The mounting member 11 has a mounting surface 12 on which components such as the semiconductor light receiving element 31, the die cap capacitor 41, and the semiconductor electronic element 51 are mounted, and the recess 14 is formed on the back surface side of the mounting surface 12. . The diameter of the mounting surface 12 is set to about 4.22 mm. This mounting member 11 is
It is made of metal such as Kovar, Fe-Ni alloy or CuW, and is plated with gold. The mounting member 11 is provided with a plurality (four in the present embodiment) of holes 15 penetrating from the mounting surface 12 to the back surface of the mounting surface 12. Corresponding lead pins 21 to 24 are inserted into these holes 15.

One end of each of the lead pins 21 to 24 is mounted on the mounting surface 1.
The mounting member 1 is inserted into the corresponding hole 15 in a state of protruding a predetermined length (for example, about 0.35 mm) from the mounting member 1.
1 is fixed in a state of being electrically insulated. The lead pins 21 to 24 and the mounting member 11 are insulated from each other by sealing with the glass member 16 filled in the recess 14.

The lead pin 21 is for applying a power source voltage (V _PD ) to the semiconductor light receiving element 31, and the lead pin 22 is for applying a power source voltage (V _DD ) to the semiconductor electronic element 51. The lead pins 23 and 24 are for outputting a signal electrically processed by the semiconductor electronic element 51. The lead pin 25 is fixed to the back surface of the mounting surface 12 while being electrically connected to the mounting member 11. These lead pins 21 to 25 are made of a metal material such as Kovar and have an outer diameter of about 0.45 mm.

The die cap capacitor 41 has an electrode 42 in contact with the mounting surface 12 on one surface side, and at least three (4 in this embodiment) arranged in parallel on the other surface side.
Three) electrodes 43 to 45. The die cap capacitor 41 is arranged such that the electrode 43 is located at the center of the mounting surface 12, and the electrode 42 is electrically connected to the mounting member 11. Die cap capacitor 41 is 0.7
The electrode 4 has a size of mm × 2.6 mm × 0.2 mm.
The size of 3 is set to 0.9 mm × 0.6 mm, the size of the electrodes 44 and 45 is set to 0.3 mm × 0.6 mm, and the size of the electrode 46 is set to 0.8 mm × 0.6 mm. Has been done.

The electrodes 44 and 45 located on both sides of the electrode 43 located in the center of the mounting surface 12 are wire-bonded and electrically connected to the mounting member 11, and are set to the ground potential. Electrodes 44 and 45 and mounting member 11
There are a plurality of wires (wirings) (two wires in the present embodiment) for electrically connecting and. The outermost electrode 46 is wire-bonded to the lead pin 22. There are a plurality of wires (two wires in the present embodiment) that electrically connect the electrodes 46 and the lead pins 22.

The semiconductor light receiving element 31 is, for example, a photodiode, and as shown in FIG.
2. It has a first electrode 33 (power supply electrode), a second electrode 34 and a third electrode 35 (signal output electrode). Further, the semiconductor light receiving element 31 has a resistance element 36 connected in series between the first electrode 33 and the second electrode 34, and a diode 37 connected in parallel to the resistance element 36. The size of the semiconductor light receiving element 31 is 0.5 mm × 0.5 mm. The semiconductor light receiving element 31 is arranged on the electrode 43 of the die cap capacitor 41. In other words, the die cap capacitor 41 is arranged such that the semiconductor light receiving element 31 (light receiving portion 32) arranged on the electrode 43 is located at the center of the mounting surface 12.

The first electrode 33 is for applying a power supply voltage to the semiconductor light receiving element 31, and is provided close to one corner of the semiconductor light receiving element 31. The first electrode 33 is wire-bonded to the lead pin 21. As a result, the power supply voltage is applied to the semiconductor light receiving element 31 via the lead pin 21 and the wire.

The third electrode 35 is for outputting a current signal obtained by converting the light incident on the light receiving portion 32, and has a corner portion provided adjacent to the first electrode 33. It is provided close to the adjacent corners.

The second electrode 34 is the first and third electrodes 3
3, 35 are provided along one side opposite to the corners provided close to each other. The second electrode 34 is wire-bonded to the electrode 43 of the die cap capacitor 41. As a result, the die cap capacitor 41
The CR element is configured by the (capacitor portion configured by the electrodes 42, 43) and the resistance element 36, and stable operation of the semiconductor light receiving element 31 can be realized.

The semiconductor electronic device 51 is, for example, a preamplifier IC, and electrically processes (for example, amplifies, current-voltage converts, etc.) the current signal output from the semiconductor light receiving device 31. The semiconductor electronic device 51 includes a first electrode 52 (power supply electrode), a second electrode 53 (signal input electrode), a third electrode 54 (signal output electrode), a fourth electrode 55 (signal output electrode), 5 electrode 56, ground electrodes 57, 58, and the like. The semiconductor electronic element 51 is arranged on the mounting surface 12 adjacent to the die cap capacitor 41 so that the second electrode 53 faces the third electrode 35 of the semiconductor light receiving element 31. In this embodiment, it is arranged between the lead pins 23 and 24.

The first electrode 52 is for applying a power supply voltage to the semiconductor electronic element 51, and is electrically connected by wire bonding to the outermost electrode 46 of the electrodes of the die cap capacitor 41. ing. As a result, the power supply voltage is applied to the semiconductor electronic element 51 via the lead pin 22, the electrode 46 of the die cap capacitor 41 and the wire. The number of wires (three in the present embodiment) that electrically connect the first electrode 52 and the electrode 46 is set.

The second electrode 53 is for inputting a current signal from the semiconductor light receiving element 31 to the semiconductor electronic element 51, and is wire-bonded to the third electrode 35 of the semiconductor light receiving element 31.

The third electrode 54 is for outputting a signal obtained by electrically processing the current signal output from the semiconductor light receiving element 31, and is wire-bonded to the lead pin 23. As a result, the signal electrically processed by the semiconductor electronic device 51 is output via the wire and the lead pin 23. The fourth electrode 55 is the third electrode 5
The signal output from 4 outputs a complementary signal having a phase difference of 180 ° and is wire-bonded to the lead pin 24. Thereby, the semiconductor electronic device 51
Complementary signals processed electrically at the wire and lead pin 2
4 will be output. The third electrode 54 and the fourth electrode 55 are orthogonal to one side where the second electrode 53 is arranged in close proximity and are opposite sides (lead pin 2
3 and 24) are arranged close to each other.

The fifth electrode 56 is wire-bonded to the electrode of the die cap capacitor 60. The die cap capacitor 60 functions as a smoothing capacitor used in the internal circuit of the semiconductor electronic element 51, and is for determining the cutoff frequency of the high frequency cutoff filter.

The ground electrodes 57 are provided on both sides of the second electrode 53, and the electrodes 44, 4 of the die cap capacitor 41 are provided.
5 are wire-bonded and electrically connected. As a result, the ground electrode 57 is connected to the electrodes 44 and 45.
And is electrically connected to the mounting member 11 via the wire and is set to the ground potential.

Each of the ground electrodes 58 is wire-bonded to the mounting surface 12 and has a ground potential.

As described above, in the first embodiment, the ground electrode 57 is provided on both sides of the second electrode 53 in the semiconductor electronic device 51, and the ground electrode 57 is the semiconductor light receiving device 31 of the die cap capacitor 41. Are electrically connected to the mounting member 11 (mounting surface 12) via the electrodes 44 and 45 located on both sides of the electrode 43 in which is disposed, and are grounded. The wiring length between the ground electrode 57 and the electrodes 44 and 45 of the die cap capacitor 41,
Also, the wiring length between the electrodes 44 and 45 of the die cap capacitor 41 and the mounting member 11 becomes shorter than the wiring length when the ground electrode 57 is directly grounded to the mounting member 11. As a result, the influence of the inductance component of the wire itself can be suppressed to a low level, and the wire is less likely to be deformed, so that it is possible to prevent the wire from contacting each part. As a result, the structure in which the signal line for sending the current signal from the semiconductor light receiving element 31 to the semiconductor electronic element 51 is surrounded by the ground line is realized, and the impedance of the signal line can be easily and reliably reduced. Stable transmission can be realized even for signals whose frequency exceeds 2.5 GHz.

Further, in the first embodiment, the die cap capacitor 41 further has an electrode 46 at the outermost position with respect to at least three electrodes 43 to 45 arranged in parallel on the other surface side. And the electrode 4 located on the outermost side
6 and the first electrode 52 of the semiconductor electronic device 51 are electrically connected. As a result, the die cap capacitor 41 (capacitor portion configured by the electrodes 42 and 46) functions as a coupling capacitor for the power supply applied to the semiconductor electronic element 51, and the impedance of the power supply line is reduced. be able to.

Further, in the first embodiment, the semiconductor electronic device 51 has the third electrode 54 and the fourth electrode 55 as signal output electrodes for outputting a signal,
The third electrode 54 and the fourth electrode 55 are arranged in proximity to the sides orthogonal to one side in which the second electrode 53 is arranged in proximity. Thereby, the third electrode 54
Also, the length of the wires that are respectively wired to the lead pins 23 and 24 for extracting the signal from the fourth electrode 55 becomes shorter, and the influence of the inductance component that the wire itself has can be suppressed to a low level.

Further, in the first embodiment, a wire and a lead pin which are electrically connected to the first electrode 52 of the semiconductor electronic element 51 and the electrode 46 located at the outermost of the electrodes of the die cap capacitor 41. 22 and a plurality of wires electrically connected to the electrodes 46 of the die cap capacitor. As a result, the influence of the parasitic inductance of the wire can be reduced, and stable characteristics in the high frequency region can be realized.

(Second Embodiment) FIG. 4 is a plan view showing a light receiving module, and FIG. 5 is a sectional view showing the same light receiving module. The light receiving module 61 of the second embodiment is
It differs from the first embodiment in the shape of the mounting member 11 and the like.

The mounting member 11 includes a main body portion 71 having the mounting surface 12 and the terminal arrangement surface 13, and a flange portion 72 projecting laterally from the main body portion 71. The main body 71 and the brim 72 are made of metal such as Kovar, Fe—Ni alloy or CuW, and are plated with gold. The mounting member 11 (main body 71) has a thickness of 1.1 mm to 1.5 mm, the main body 71 has an outer diameter of about 4.22 mm, and the collar 72 has an outer diameter of about 5.4 mm.

The body 71 of the mounting member 11 has a mounting surface 1
A plurality of (four in the present embodiment) holes 73 to 76 are formed so as to penetrate from 2 to the terminal placement surface 13. Corresponding lead pins 21-24 are inserted into these holes 73-76, respectively. The inner diameters of the holes 73 and 74 are set to about 0.8 mm, and the holes 75 and 76 are
The inner diameter of is set to about 1.1 mm.

One end of each of the lead pins 21 to 24 is the mounting surface 1.
It is inserted into the corresponding holes 73 to 76 in a state of protruding a predetermined length (for example, about 0.35 mm) from 2, and is fixed to the mounting member 11 in an electrically insulated state. The lead pins 21-24 pass substantially through the centers of the holes 73-76.
The outer diameter of the lead pin 21.22 inserted into the holes 73 and 74 is set to about 0.45 mm, and the holes 75 and 76 are
The outer diameter of the lead pins 23 and 24 inserted in the
It is set to m. The outer diameter of the lead pin 25 is set to about 0.45 mm.

The lead pins 21 to 24 and the mounting member 11 are fixed to each other by fixing the outer peripheral surfaces of the lead pins 21 to 24 and the holes 73 to 7 to each other.
This is performed by filling the glass members 81 to 84 only in the gap with the inner peripheral surface of 6 and hermetically sealing the gap.
Here, the dielectric constants of the glass members 81 to 84 are about 4.1.

Since the inner diameters of the holes 75 and 76 are about 1.1 mm, the outer diameters of the glass members 83 and 84 are also about 1.1 m.
m. On the other hand, the outer diameters of the lead pins 23 and 24 are set to about 0.2 mm as described above. As a result, the lead pins 23 and 24 have a signal frequency of 10 GHz.
The impedance becomes about 50Ω in the portion sealed by the glass members 83 and 84 so that the signal of (4) passes, and the impedance is matched.

As described above, also in the second embodiment, as in the first embodiment, a structure in which the signal line for sending a current signal from the semiconductor light receiving element 31 to the semiconductor electronic element 51 is surrounded by the ground line is realized. Therefore, it is possible to easily and surely reduce the impedance of the signal line,
Stable transmission can be realized even for signals whose signal frequency exceeds 2.5 GHz.

Further, in the second embodiment, the impedance of the lead pins 23, 24 is set to a desired value by appropriately setting the outer diameters of the lead pins 23, 24 and the inner diameters of the holes 75, 76. Next, glass member 8
The lead pin 2 in the portion sealed by 3, 84
The impedance matching of 3 and 24 can be easily achieved.

Further, in the second embodiment, the thickness of the mounting member 11 is set thicker than that of the first embodiment, so that the thermal resistance of the mounting member 11 is reduced. Become. Thereby, the heat dissipation characteristics of the light receiving module 61 can be improved.

(Third Embodiment) FIG. 6 is a plan view showing a light receiving module. The light receiving module of the third embodiment is
The die cap capacitor is different from that of the second embodiment.

The die cap capacitor 60 has a plurality of (two in the third embodiment) electrodes 91 and 92. As described above, the die cap capacitor 6
0 is for determining the cutoff frequency of the high-frequency cutoff filter in the semiconductor electronic device 51, and its capacitance value needs to be set carefully.

For this reason, the electrode of the die cap capacitor 60 is divided into a plurality of parts, and the fifth electrode of the semiconductor electronic device 51 is divided.
By appropriately selecting an electrode electrically connected to the electrode 56, the capacitance value of the capacitor portion of the die cap capacitor 60 that substantially functions as a smoothing capacitor is changed. As a result, the cutoff frequency of the high frequency cutoff filter in the semiconductor electronic device 51 can be set appropriately.

The present invention is not limited to the above embodiment. For example, the die cap capacitor 41 and the die cap capacitor 60 may be integrally formed. That is, the length of the die cap capacitor 41 may be extended, an electrode may be provided in this extended portion, and this portion may be used as the die cap capacitor 60.

Further, a new die cap capacitor may be arranged between the lead pins 21 and 22 and electrically connected to the lead pin 21 or the lead pin 22. By electrically connecting the die cap capacitor newly arranged between the lead pins 21 and 22 and the lead pin 21, it is possible to function as a coupling capacitor for the power supply applied to the semiconductor light receiving element 31. By electrically connecting the die cap capacitor newly arranged between the lead pins 21 and 22 and the lead pin 22, it is possible to function as a coupling capacitor for the power supply applied to the semiconductor electronic element 51.

As a wire (wiring) used for wire bonding, a gold wire having a diameter of 30 μm to 50 μm is usually used, but a gold ribbon may be used instead.

[0054]

As described above in detail, according to the present invention, it is possible to provide a light receiving module which can easily reduce the impedance of the power supply line and the signal line.

[Brief description of drawings]

FIG. 1 is a plan view showing a light receiving module according to a first embodiment.

FIG. 2 is a cross-sectional view showing a light receiving module according to the first embodiment.

FIG. 3 is a diagram showing a configuration of a semiconductor light receiving element included in a light receiving module.

FIG. 4 is a cross-sectional view showing a light receiving module according to a second embodiment.

FIG. 5 is a plan view showing a light receiving module according to a second embodiment.

FIG. 6 is a plan view showing a light receiving module according to a third embodiment.

FIG. 7 is a plan view showing a conventional light receiving module.

[Explanation of symbols]

1, 61, 101 ... Light receiving module, 11, 111 ... Mounting member, 12, 112 ... Mounting surface, 31, 131 ... Semiconductor light receiving element, 32, 132 ... Light receiving part, 33, 133 ... First
Electrode (power supply electrode), 34, 134 ... second electrode, 3
5,135 ... Third electrode (signal output electrode), 36, 13
6 ... Resistance element, 41, 141 ... Die cap capacitor, 42-46, 142, 143 ... Electrode, 51, 151
... Semiconductor electronic devices, 52,152 ... First electrodes (power supply electrodes), 53,153 ... Second electrodes (signal input electrodes), 5
4, 154 ... Third electrode (signal output electrode), 55, 15
5 ... Fourth electrode (signal output electrode), 56, 156 ... Fifth electrode
, 57, 58, 157 ... Ground electrode.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Makoto Ito             Sumitomoden 1 Taya-cho, Sakae-ku, Yokohama-shi, Kanagawa             Ki Industry Co., Ltd. Yokohama Works F-term (reference) 5F088 AA01 BA02 BA16 EA07 EA16                       JA03 JA10 KA02 KA10

Claims (4)

[Claims] 1. A semiconductor light receiving element having a mounting member made of a conductive member and having a mounting surface, a light receiving portion, and a signal output electrode for outputting a current signal from the light receiving portion, and inputting the current signal. A semiconductor electronic element having a signal input electrode for controlling the signal input electrode and ground electrodes provided on both sides of the signal input electrode, an electrode in contact with the mounting surface on one surface side, and arranged side by side on the other surface side. And a die cap capacitor having at least three electrodes, the semiconductor light receiving element is disposed on a central electrode of the at least three electrodes of the die cap capacitor, and the die cap capacitor is disposed A semiconductor light receiving element is arranged so as to be located at a central portion of the mounting surface, and the semiconductor electronic element has the signal input electrode having the signal output voltage of the semiconductor light receiving element. It is arranged on the mounting surface adjacent to the die cap capacitor so as to face the pole, and the signal output electrode of the semiconductor light receiving element and the signal input electrode of the semiconductor electronic element are electrically connected, The ground electrode of the semiconductor electronic element and the corresponding electrode of the electrodes located on both sides of the electrode of the die cap capacitor on which the semiconductor light receiving element is disposed are electrically connected to each other. The light-receiving module, wherein the electrode of the die cap capacitor electrically connected to the ground electrode of the element and the mounting surface are electrically connected to each other. 2. The die cap capacitor further has electrodes at outermost positions with respect to the at least three electrodes arranged side by side on the other surface side, and the outermost electrode is provided. 2. The light receiving module according to claim 1, wherein the power supply electrode of the semiconductor electronic element is electrically connected to the power supply electrode of the semiconductor electronic element. 3. The semiconductor electronic device has a pair of signal output electrodes for outputting a signal, and the signal output electrodes are arranged on a side orthogonal to one side where the signal input electrodes are arranged close to each other. The light receiving module according to claim 1, wherein the light receiving modules are arranged close to each other. 4. The semiconductor light receiving element includes a power supply electrode for applying a power supply voltage to the light receiving portion, and an electrode electrically connected to the electrode of the die cap capacitor on which the semiconductor light receiving element is arranged. The light receiving module according to claim 1, further comprising: a resistance element connected in series between the electrode and the power supply electrode.