JP2003280032A - Liquid crystal display - Google Patents

Abstract

(57) [Summary] In a liquid crystal display device in which a storage capacitor is formed between a semiconductor layer and a storage capacitor line, a decrease in contrast due to a backlight light passing through a region where the semiconductor layer is not covered by the storage capacitor can be achieved. A color change occurs. SOLUTION: On an array substrate 91, a semiconductor layer (polysilicon) 10, a gate insulating layer 21, a storage capacitor line 30, and an interlayer insulating layer are provided.
22 passivation layer 23 and color filter layer 50
In a liquid crystal display device in which pixel electrodes 71 and 72 are sequentially deposited, a light shielding layer 40 is formed at least in a region where a semiconductor layer is not covered with a storage capacitor line between an interlayer insulating layer and a passivation layer.
The light-shielding layer shields the backlight light passing through these regions, so that the light does not pass through the pixel openings and can suppress a decrease in contrast and a change in color.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device, particularly to an active matrix type liquid crystal display device using a low temperature polysilicon (p-Si) process.

[0002]

2. Description of the Related Art Liquid crystal display devices are used in a wide variety of electric appliances, starting from conventional notebook or desktop personal computer displays, to small ones for mobile phones and various mobile terminals, to large ones for TVs. It is used as a display.

Among these, in recent years, TV applications, particularly high-definition TV applications by taking advantage of their high definition, are expected.
In such a flow, from the liquid crystal display device using the conventional amorphous silicon (a-Si) to the semiconductor layer, a-Si is polycrystallized by laser annealing (low temperature) polysilicon (p-Si). ) Process studies are underway. Compared to a-Si process LCDs, p-Si process LCDs use switching elements such as TFTs (Thin Film Transistors).
r) has the advantages of high mobility and small parasitic capacitance, and is an important technology for displaying more beautiful images, such as the display of high-definition images and high-speed driving.

In the current liquid crystal display device, an array substrate having a TFT or the like and a counter substrate having a color filter (hereinafter CF) layer and a black matrix (hereinafter BM) layer formed thereon are opposed to each other with a liquid crystal layer sandwiched therebetween. The CF method is the mainstream. On the other hand, mainly for the purpose of cost reduction, research and development have been conducted on a color filter on array (COA) type liquid crystal display device in which a CF layer is formed on an array substrate. In the COA type liquid crystal display device, the wiring formed by the opaque conductive layer is used as BM, and the CF layer formed on the array substrate improves the flatness of the pixel. Therefore, it can be said that the technology is as important as the p-Si process.

A process of a COA type liquid crystal display device by a p-Si process will be described with reference to the drawings. Figure 1 shows a typical low temperature pS
FIG. 2A is a plan view of the liquid crystal display device by the i process and FIG. 6A is a cross-sectional view taken along the line AA ′ in FIG. First, semiconductor layers (a-Si) 10 and 11 are deposited and laser-annealed (p-Si conversion) is performed on an array substrate 91 such as glass, and patterning is performed. After that, a gate insulating layer 21 such as Si oxide and a conductive layer such as Al are continuously deposited, and the gate line 31 and the storage capacitance line 30 of the TFT are formed by patterning the conductive layer. Do the doping. At this time, the semiconductor layer that is not ion-doped by the gate line is in the channel of the TFT 12,
The semiconductor layer covered by the storage capacitor line forms a MIS capacitor having a metal-insulating layer-semiconductor structure and becomes a storage capacitor. Next, an interlayer insulating layer 22 is deposited, a contact hole 60 is formed in the insulating layer to provide contact between the source line and the source electrode of the TFT, and a source line 43 is formed by depositing and patterning a conductive layer such as Al. . Subsequently, the passivation film 23 and the color filter layer 50 are deposited, and the pixel electrode and
A pixel electrode 71, 72 is formed by forming a contact hole 61 between the TFT drain electrode and the semiconductor layer of the storage capacitor and depositing and patterning a transparent conductive layer such as ITO (Indium Tin Oxide).
To form. Finally, the array substrate is bonded to the counter substrate 92 having a transparent conductive layer deposited as the counter electrode 80 on the entire surface together with a spacer (not shown) for maintaining a gap of about 5 mm, and the liquid crystal layer 100 is injected between the substrates. An alignment film and a polarizing plate for controlling the alignment of the liquid crystal molecules applied to the surfaces of the array substrate and the counter substrate in contact with the liquid crystal layer are omitted because they are not directly related to the present invention. Further, the contact between the semiconductor layer and the pixel electrode may be made via another conductive layer.

[0006]

In such a structure, since it is necessary to perform ion doping on the p-Si layer of the storage capacitor portion as disclosed in Japanese Patent Laid-Open No. 5-326961, the p-Si layer is not formed. It must be deposited so that it protrudes at least 2 mm from the storage capacitance line. However, p-Si
Since the layer is not a sufficiently opaque layer, in a conventional pixel configuration, the light from the backlight 110 passes through the liquid crystal layer after being modulated by the p-Si layer as shown in FIG. 1. An image display different from the backlight light passing only through the liquid crystal layer is displayed. That is, there is a problem that it becomes a factor of deterioration of contrast and color change.

[0007]

In order to solve such problems, a liquid crystal display device according to the present invention has a plurality of liquid crystal layers sandwiched between an array substrate and a counter substrate and arranged in a matrix on the array substrate. Each pixel includes at least a pixel electrode, a storage capacitor line, a semiconductor layer, and an insulating layer formed between the storage capacitor line and the semiconductor layer, and the storage capacitor line and the semiconductor layer. A liquid crystal display device in which a storage capacitor is formed by the insulating layer, wherein a light shielding layer is formed in a region of the semiconductor layer not covered by the storage capacitor line. 1).

At this time, the light shielding layer is formed of an opaque conductor (claim 2).

Further, the light shielding layer is electrically connected to the storage capacitor line. (Claim 3).

Alternatively, the light shielding layer may be electrically connected to the pixel electrode (claim 4).

A liquid crystal layer is sandwiched between an array substrate and a counter substrate, and a plurality of pixels are arranged in a matrix on the array substrate, each pixel having at least a pixel electrode, a storage capacitor line, a semiconductor layer, and A first pixel electrode having an insulating layer formed between a storage capacitance line and the semiconductor layer, wherein the pixel electrode is adjacent to the storage capacitance line or partially overlaps with the storage capacitance line; In a liquid crystal display device including a second pixel electrode and forming a storage capacitor by the storage capacitor line, the semiconductor layer, and the insulating layer, the semiconductor layer is electrically connected to the first pixel electrode. In the liquid crystal display device, a light-shielding layer is formed in a region of the semiconductor layer that is not covered by the storage capacitance line (claim 5).

At this time, the light shielding layer is formed of an opaque conductor (claim 6).

Further, a first light-shielding layer of the light-shielding layer which overlaps a first pixel electrode is the storage capacitor line (claim 1).
7) Alternatively, it is electrically connected to the first pixel electrode (claim 8).

Further, a second light-shielding layer of the light-shielding layer which overlaps a second pixel electrode is the storage capacitor line (claim 2).
9) or electrically connected to the second pixel electrode (claim 10).

Alternatively, the light shielding layer is electrically connected to the first pixel electrode or the second pixel electrode (claim 11).

Alternatively, the light shielding layer is electrically connected to the storage capacitance line (claim 12).

A liquid crystal layer is sandwiched between an array substrate and a counter substrate, and a plurality of pixels arranged in a matrix on the array substrate are provided. Each pixel has at least a pixel electrode, a storage capacitor line, a semiconductor layer, and A first pixel electrode that is adjacent to the pixel electrode along the storage capacitor line or partially overlaps with the storage capacitor line; and a second pixel electrode that includes an insulating layer formed between the storage capacitor and the semiconductor layer. A liquid crystal display device that includes a pixel electrode of, and forms a storage capacitor by the storage capacitor line, the semiconductor layer, and the insulating layer, wherein the semiconductor layer is electrically connected to the first pixel electrode. A light shielding layer is formed in a region where the semiconductor layer is not covered by the storage capacitor line and the first pixel electrode overlaps, and at least the semiconductor layer of the second pixel electrode is the storage capacitor. A liquid crystal display device characterized by providing an opening portion in a part of the area overlapping the uncovered areas by (claim 13).

At this time, the light shielding layer is formed of an opaque conductor (claim 14).

Further, the light-shielding layer is the first pixel electrode (claim 15) or the storage capacitance line (claim 16).
And is electrically connected to.

Further, a black matrix layer covering at least the opening is formed on the counter substrate (claim 17) or the array substrate (claim 18).

In the liquid crystal display device according to any one of claims 1 to 18, at least the semiconductor layer on the counter substrate (claim 19) or on the array substrate (claim 20) is covered with the storage capacitance line. A black matrix layer is formed in the unexposed area.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. A plan view of the pixels referenced below
In the cross-sectional view, the semiconductor layer is electrically connected to the first pixel electrode, and a COA type liquid crystal display device in which a color filter layer is formed on an array substrate is used.

(Embodiment 1) FIG. 1 is a plan view (a) of the pixel configuration of the above-mentioned conventional liquid crystal display device and AA 'in FIG.
2B is a sectional view in FIG. 2A, and FIG. 2A is a plan view of the pixel configuration of the liquid crystal display device according to the first embodiment of the present invention, and FIG.
A sectional view (b) at A ′ is shown.

In FIG. 1 (b), when a backlight is irradiated from the lower side of the substrate, a region that passes only the liquid crystal layer in the pixel,
A region that is shielded by the storage capacitor line and a region that passes through the semiconductor layer and the liquid crystal layer are formed. Of these, an image is displayed according to the voltage applied to the liquid crystal layer as a display area,
Has the same effect as the black matrix, but is displayed as an image similar to. As described above, in the above, since the backlight light is modulated by the semiconductor layer, an arbitrary image cannot be obtained even after passing through the liquid crystal layer, which is recognized as a decrease in contrast or a color change.

Therefore, in the liquid crystal display device according to the first embodiment of the present invention, as shown in FIG. 2, the light shielding layer 40 is provided in a region of the semiconductor layer which is not covered with the storage capacitance line. At this time, it is desirable that the light-shielding layer is formed in the same process as the source line 31 because the number of masks and the cost are not increased. With such a pixel structure, backlight light that passes through the semiconductor layer can be blocked and deterioration of contrast and color change can be suppressed, whereby favorable image display can be performed.

Although the light shielding layer is in a floating state in FIG. 2, the first hole is formed through the contact hole 62 provided in the passivation layer and the CF layer as shown in FIG.
Alternatively, since the storage capacitor can be formed between the light-shielding layer and the storage capacitor line by electrically connecting to the second pixel electrode, the aperture ratio is reduced even when a large storage capacitor is formed. Can be minimized.

(Embodiment 2) FIG. 4 is a plan view (a) and a diagram of a pixel configuration of a liquid crystal display device according to a second embodiment of the present invention.
Sectional drawing (b) in AA 'in (a) is shown. The feature of this embodiment is that the light shielding layer 40 electrically connected to the floating or pixel electrode in the first embodiment is electrically connected to the storage capacitance line 30. With such a configuration, it is possible to suppress a decrease in contrast due to the semiconductor layer, and there are advantages described below.

In FIG. 3, since the light blocking layer 40 is electrically connected to the first pixel electrode 71, the light blocking layer and the second pixel electrode 72 are connected.
A capacitance between pixels is formed in a region where and overlap. This capacitance is the capacitance (Cdd) between the first and second pixel electrodes because the semiconductor layer is electrically connected to the first pixel electrode.
That is, as shown in FIG. 19 (a), it is obtained from the geometrical overlapping area S of the semiconductor layer and the second pixel electrode and the dielectric constant and film thickness of the insulating layer formed between them. Not only the capacitance but also the capacitance due to the electric field component acting in the oblique direction as shown in FIG. This capacity Cdd is 1st and 2nd
When the opposite polarity charge is applied to the pixel electrode, the pixel potential is changed, which becomes a factor to prevent good image display. As an example, if the first pixel electrode is charged (0V → 9V) and then the second pixel electrode is charged (9V → 0V), Cdd
Is 1% of the pixel capacity Cpix. The variation ΔVd2 (= -9V) due to the charging of the second pixel electrode is
Of the pixel electrode. The superimposed voltage is approximately -90 mV as shown in (Equation 1), and the degree of influence varies depending on the TV characteristics and γ characteristics of the liquid crystal layer, but it is fully possible that the image will be different from what should be displayed. To be

[0029]

[Equation 1]

On the other hand, by electrically connecting the light shielding layer to the storage capacitor line as in the present embodiment, the Cdd
The pixel potential does not fluctuate after charging because no charge is formed. Capacitors are formed between the light-shielding layer and the first and second pixel electrodes, but since these act as storage capacitors, good image display is possible without deterioration of contrast and color change.

(Embodiment 3) FIGS. 5 to 9 show the first embodiment of the present invention.
3 is a plan view of the pixel configuration of the liquid crystal display device according to the third embodiment. FIG.
FIG. 3A shows a cross-sectional view taken along the line AA ′ in FIG. The feature of this embodiment is that the light shielding layer in the first and second embodiments is used.
40, a first light shielding layer 41 formed on the first pixel electrode 71 side,
This is because it is separated into the second light shielding layer 41 formed on the second pixel electrode 72 side. By separating the light shielding layer in this way, it is possible to shield the region where the semiconductor layer 10 is not covered with the storage capacitance line 30, and the first and second light shielding layers are electrically connected to arbitrary conductive layers. Can be connected to.

As an example thereof, the effect of electrically connecting the first light-shielding layer shown in FIG. 9 to the first pixel electrode and the second light-shielding layer to the storage capacitance line will be described.

First, by electrically connecting the first light-shielding layer to the first pixel electrode, a storage capacitor can be formed between the first light-shielding layer and the storage capacitance line. As a result, a large storage capacitance can be formed together with the storage capacitance between the storage capacitance line and the semiconductor layer. Alternatively, even when the required storage capacitance can be obtained, the storage capacitance line can be made thin, which has the effect of increasing the aperture ratio.

By electrically connecting the second light-shielding layer to the storage capacitance line, it is possible to prevent the formation of the capacitance between the semiconductor layer and the second pixel electrode. By electrically connecting the second light shielding layer to the storage capacitor line, the electric field from the semiconductor layer is
Since it works with the second light-shielding layer and serves as a storage capacitor on the side of the first pixel electrode, fluctuations in the pixel potential after charging the second pixel electrode are also suppressed, and good image display is possible.

(Fourth Embodiment) FIGS. 10 and 11 are plan views (a) of the pixel configuration of a liquid crystal display device according to a fourth embodiment of the present invention and a cross section taken along line AA ′ in FIG. Figure (b) is shown. The feature of this embodiment is that at least a part of the region where the semiconductor layer 10 of the second pixel electrode 72 overlaps the region not covered by the storage capacitance line 30 is provided with the opening 73, and the BM is provided in the region covering the opening.
Forming the layer 51.

By providing an opening in the second pixel electrode,
The capacitance formed between the second pixel electrode and the semiconductor layer can be reduced. This capacitance is Cdd because the semiconductor layer is electrically connected to the first pixel electrode, and therefore causes a variation in pixel potential depending on the driving method as described above.

However, in this structure, there is no light-shielding layer for blocking the light passing through the semiconductor layer, and an arbitrary electric field cannot be applied to the liquid crystal layer in the opening of the pixel electrode. Therefore, as shown in FIG. A BM layer is formed in a region facing the opening of the counter substrate 92 to shield light. Alternatively, FIG.
By forming the BM layer as the CF layer 50 in the vicinity of the opening as shown in, it is possible to block the backlight light from the opening. Further, in the pixel configuration shown in FIG. 11, since it is not necessary to consider the misalignment between the array substrate 91 and the counter substrate, it is possible to suppress the formation of BM to a minimum, as compared with the case where the counter substrate BM layer is formed. As a result, it is possible to suppress a decrease in aperture ratio, and it is possible to display a good image.

(Embodiment 5) FIG. 12 and FIG.
5 is a plan view of the pixel configuration of the liquid crystal display device according to the fifth embodiment. FIG.
FIG. 3A shows a cross-sectional view taken along the line AA ′ in FIG. A feature of this embodiment is that the BM layer 51 is formed in a region of the semiconductor layer 10 which is not covered by the storage capacitor line 30, and the backlight light passing through the semiconductor layer is blocked. The BM layer is formed on the counter substrate 92 as shown in FIG. 12 or the array substrate 91 as shown in FIG. However, when the BM layer is formed on the counter substrate, misalignment between the array substrate and the counter substrate occurs, so it is preferable to form it on the array substrate.

In the pixel configuration shown in these figures, as described above, the capacitance Cdd is formed between the semiconductor layer (electrically the first pixel electrode 71) and the second pixel electrode 72. Will end up. Therefore, as shown in FIG. 14 or 15, by providing a conductive layer 43 electrically connected to the storage capacitance line between the semiconductor layer and the second pixel electrode, the first and second pixel electrodes Since the capacitance Cdd between them is not formed and the pixel potential does not fluctuate, good image display is possible.

(Sixth Embodiment) FIG. 16 shows a plan view (a) of a pixel configuration of a liquid crystal display device according to a sixth embodiment of the present invention and a sectional view taken along line AA ′ in FIG. . Although the first pixel electrode 71 and the second pixel electrode 72 are configured to overlap the storage capacitance line 30 in the above embodiments, the present embodiment
This is a case where one pixel electrode 70 overlaps the storage capacitance line. Also in this case, the light shielding layer 40 shields the light passing through the region of the semiconductor layer that is not covered by the storage capacitor line, so that it is possible to suppress the deterioration of the contrast and the color change and to display a good image.

Further, although the light shielding layer is in an electrically floating state in FIG. 16, it is electrically connected to the pixel electrode or the storage capacitor line as shown in FIG. 3 or 4, or from FIG. 5 to FIG. It is obvious that the same effect can be obtained even if the structure is divided into two light shielding layers 41 and 42 as shown in FIG.

(Embodiment 7) FIG. 17 is a plan view (a) of a pixel configuration of a liquid crystal display device according to a seventh embodiment of the present invention and a sectional view (b) taken along the line AA ′ in FIG. Indicates. A feature of this embodiment is that the BM layer 51 is formed at least in a region where the semiconductor layer 10 is not covered with the storage capacitance line 30. In the pixel configuration as shown in FIG. 17, the semiconductor layer 10 and the pixel electrode 70 have the same potential, and the pixel-pixel capacitance Cdd with the adjacent pixel is not formed. Therefore, a conductive layer that blocks the electric field component that acts between the semiconductor layer and the pixel electrode is not necessarily required. Therefore, by forming the BM layer in the region where the semiconductor layer is not covered by the storage capacitor line as shown in the figure, it is possible to block the light passing through the semiconductor layer, so that there is a reduction in contrast and color change. Suppressed, and good image display is possible.

Although the BM layer is formed on the array substrate 91 in FIG. 17, it is obvious that the same effect can be obtained by forming it on the counter substrate 92.

In the above embodiments, the liquid crystal display device is a COA.
However, the passivation layer 23
Even in a liquid crystal display device having a pixel structure in which a flattening film for flattening the pixel electrode is formed thereon, the same effect can be obtained by using the CF layer 50 as the flattening film. Further, the same effect can be obtained also in the counter CF type liquid crystal display device in which the CF layer 50 is formed on the counter substrate 92. In this case,
Except for the COA layer 50, the CF layer and BM on the counter substrate
The pixel configuration has layers. As an example, FIG. 18 shows a plan view (a) and a cross-sectional view (b) taken along the line AA ′ in FIG. 18A when the COA type liquid crystal display device shown in FIG.

[0045]

As described above, in the liquid crystal display device of the present invention, the region where the semiconductor layer is not covered with the storage capacitance line can be shielded from light, and a good image can be displayed.

[Brief description of drawings]

FIG. 1 is a diagram showing a conventional liquid crystal display device.

FIG. 2 is a diagram showing a liquid crystal display device according to a first embodiment of the present invention.

FIG. 3 is a diagram showing a case where a light shielding layer is electrically connected to a first pixel electrode in the liquid crystal display device according to the first embodiment.

FIG. 4 is a diagram showing a pixel configuration of a liquid crystal display device according to a second embodiment of the present invention.

FIG. 5 is a diagram showing a pixel configuration of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 6 is a diagram showing a pixel configuration of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 7 is a diagram showing a pixel configuration of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 8 is a diagram showing a pixel configuration of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 9 is a diagram showing a pixel configuration of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 10 is a diagram showing a pixel configuration of a liquid crystal display device according to a fourth embodiment of the present invention, in which a black matrix layer is formed on a counter substrate.

FIG. 11 is a diagram showing a case where a black matrix layer is formed on an array substrate in a pixel configuration of a liquid crystal display device according to a fourth embodiment of the present invention.

FIG. 12 is a diagram showing a case where a black matrix layer is formed on an array substrate in a pixel configuration of a liquid crystal display device according to a fifth embodiment of the present invention.

FIG. 13 is a diagram showing a case where a black matrix layer is formed on a counter substrate in a pixel configuration of a liquid crystal display device according to a fifth embodiment of the present invention.

14 is a diagram showing a pixel configuration of a liquid crystal display device provided with a conductive layer in FIG.

15 is a diagram showing a pixel configuration of a liquid crystal display device provided with a conductive layer in FIG.

FIG. 16 is a diagram showing a pixel configuration of a liquid crystal display device according to a sixth embodiment of the present invention.

FIG. 17 is a diagram showing a pixel configuration of a liquid crystal display device according to a seventh embodiment of the present invention.

FIG. 18 is a diagram showing a pixel configuration in a facing CF type liquid crystal display device.

FIG. 19 is a diagram illustrating capacitance formation by an oblique electric field.

[Explanation of symbols]

10,11 Semiconductor layer 12 TFT 21,22,23 Gate insulation layer, interlayer insulation layer, passivation layer 30,31 Storage capacitance line, gate line 40,41,42,43 Light shielding layer, first light shielding layer, second Light-shielding layer, source line 50,51 color filter layer, black matrix layer 60 to 63 Contact holes 70,71,72,73 Pixel electrode, first pixel electrode, second pixel electrode, second pixel electrode opening 80 counter electrode 91,92 array substrate, counter substrate 100 liquid crystal layer 110 backlight

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hiroshi Tabata             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Taku Hamaoka             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 2H091 FA34Y FA35Y FD04 GA13                       LA03 LA17                 2H092 GA11 GA12 GA17 GA25 JA21                       JA24 JA28 JB52 JB54 JB64                       KA04 NA21 NA22 NA23 PA09

Claims (20)

[Claims] 1. A liquid crystal layer is sandwiched between an array substrate and a counter substrate, and a plurality of pixels are arranged in a matrix on the array substrate, wherein the pixels include at least a pixel electrode, a storage capacitor line, a semiconductor layer, and A liquid crystal display device comprising a storage capacitor line and an insulating layer formed between the semiconductor layers, wherein a storage capacitor is formed by the storage capacitor line, the semiconductor layer and the insulating layer, wherein the storage of the semiconductor layer A liquid crystal display device, wherein a light-shielding layer is formed in a region which is not covered with a capacitance line. 2. The liquid crystal display device according to claim 1, wherein the light shielding layer is made of an opaque conductor. 3. The liquid crystal display device according to claim 2, wherein the light shielding layer is electrically connected to the storage capacitance line. 4. The liquid crystal display device according to claim 2, wherein the light shielding layer is electrically connected to the pixel electrode. 5. A liquid crystal layer is sandwiched between an array substrate and a counter substrate, and a plurality of pixels are arranged in a matrix on the array substrate, and each pixel has at least a pixel electrode, a storage capacitor line, and a semiconductor layer. A first pixel electrode having an insulating layer formed between the storage capacitance line and the semiconductor layer, wherein the pixel electrode is adjacent to the storage capacitance line or partially overlaps with the storage capacitance line; A liquid crystal display device including a second pixel electrode and a storage capacitor line, the semiconductor layer, and the insulating layer, wherein the semiconductor layer is electrically connected to the first pixel electrode. And a light-shielding layer is formed in a region of the semiconductor layer that is not covered by the storage capacitance line. 6. The liquid crystal display device according to claim 5, wherein the light shielding layer is made of an opaque conductor. 7. The first light-shielding layer of the light-shielding layer, which overlaps with the first pixel electrode, is electrically connected to the first pixel electrode. Liquid crystal display device. 8. The liquid crystal display according to claim 6, wherein a first light-shielding layer of the light-shielding layer that overlaps the first pixel electrode is electrically connected to the storage capacitance line. apparatus. 9. The light shielding layer, wherein the second light shielding layer overlapping the second pixel electrode is electrically connected to the storage capacitor line. 9. The liquid crystal display device according to any one of 8. 10. The second light-shielding layer of the light-shielding layer, which overlaps with the second pixel electrode, is electrically connected to the second pixel electrode.
7. The liquid crystal display device according to 7 or 7. 11. The liquid crystal display device according to claim 6, wherein the light-shielding layer is electrically connected to either the first pixel electrode or the second pixel electrode. 12. The liquid crystal display device according to claim 6, wherein the light shielding layer is electrically connected to the storage capacitance line. 13. A liquid crystal layer is sandwiched between an array substrate and a counter substrate, and a plurality of pixels are arranged in a matrix on the array substrate, and each pixel has at least a pixel electrode, a storage capacitor line, and a semiconductor layer. An insulating layer formed between the storage capacitor and the semiconductor layer, wherein the pixel electrode is adjacent to the storage capacitor line or partially overlaps with the storage capacitor line; A liquid crystal display device including two pixel electrodes, wherein a storage capacitor is formed by the storage capacitor line, the semiconductor layer, and the insulating layer, wherein the semiconductor layer is electrically connected to the first pixel electrode. A light-shielding layer is formed in a region in which the first pixel electrode overlaps a region where the semiconductor layer is not covered by the storage capacitance line, and at least the semiconductor layer of the second pixel electrode is the storage layer. The liquid crystal display device characterized by providing an opening portion in a part of the area overlapping the area not covered by the amount line. 14. The liquid crystal display device according to claim 13, wherein the light shielding layer is formed of an opaque conductor. 15. The liquid crystal display device according to claim 14, wherein the light shielding layer is electrically connected to the first pixel electrode. 16. The liquid crystal display device according to claim 14, wherein the light shielding layer is electrically connected to the storage capacitor line. 17. The liquid crystal display device according to claim 13, wherein a black matrix layer covering at least the opening is formed on the counter substrate. 18. The liquid crystal display device according to claim 13, wherein a black matrix layer covering at least the opening is formed on the array substrate. 19. The black matrix layer according to claim 1, wherein a black matrix layer is formed in at least a region of the counter substrate which faces a region where the semiconductor layer is not covered by the storage capacitor line. The described liquid crystal display device. 20. The liquid crystal according to claim 1, wherein a black matrix layer is formed on a region of the array substrate where at least the semiconductor layer is not covered by the storage capacitance line. Display device.