JP2003273188A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JP2003273188A JP2003273188A JP2002068689A JP2002068689A JP2003273188A JP 2003273188 A JP2003273188 A JP 2003273188A JP 2002068689 A JP2002068689 A JP 2002068689A JP 2002068689 A JP2002068689 A JP 2002068689A JP 2003273188 A JP2003273188 A JP 2003273188A
- Authority
- JP
- Japan
- Prior art keywords
- cassette
- chamber
- semiconductor substrate
- particles
- cassette chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 11
- 238000011282 treatment Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 238000009423 ventilation Methods 0.000 abstract 1
- 238000010926 purge Methods 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 238000013022 venting Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体基板を収納
するカセットを格納し、半導体基板を処理チャンバとの
間で搬出入する際に、内部圧力をパージガスの給排気に
より常圧または減圧状態に変化させるカセットチャンバ
を具備する半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention stores a cassette for accommodating semiconductor substrates, and when the semiconductor substrates are carried in and out of a processing chamber, the internal pressure is brought to a normal pressure or a reduced pressure state by supplying and exhausting purge gas. The present invention relates to a semiconductor manufacturing apparatus including a changing cassette chamber.
【０００２】[0002]
【従来の技術】半導体装置の製造工程においては、スル
ープットの向上や半導体基板の汚染防止を目的に、カセ
ットチャンバ，搬送チャンバ，処理チャンバが連接する
マルチチャンバ方式の各種プロセス処理装置が使用され
る。2. Description of the Related Art In a semiconductor device manufacturing process, various multi-chamber process processing apparatuses in which a cassette chamber, a transfer chamber and a processing chamber are connected to each other are used for the purpose of improving throughput and preventing contamination of semiconductor substrates.
【０００３】従来のＣＶＤ装置の一例を図３，図４に示
す。図３は、縦断面図であり、図４は平面図である。マ
ルチチャンバ方式のＣＶＤ装置１は、カセットチャンバ
２と、搬送チャンバ３と、処理チャンバ４とで構成され
ている。An example of a conventional CVD apparatus is shown in FIGS. 3 is a vertical cross-sectional view, and FIG. 4 is a plan view. The multi-chamber CVD apparatus 1 includes a cassette chamber 2, a transfer chamber 3, and a processing chamber 4.
【０００４】カセットチャンバ２は、ゲートバルブ５ａ
を介して搬送チャンバ３に連接し、搬送チャンバ３は、
ゲートバルブ５ｂを介して処理チャンバ４に連接してい
る。The cassette chamber 2 has a gate valve 5a.
Is connected to the transfer chamber 3 via
It is connected to the processing chamber 4 via a gate valve 5b.
【０００５】カセットチャンバ２には、開閉扉２ａが設
けられ、そこから半導体基板６を収納したカセット７を
搬出入可能とし、また、カセット支持軸８と駆動モータ
９とから成る昇降機構１０を備え、カセット支持軸８に
セットされたカセット７の上下位置を移動可能としてい
る。An opening / closing door 2a is provided in the cassette chamber 2, through which a cassette 7 containing a semiconductor substrate 6 can be carried in and out, and an elevating mechanism 10 composed of a cassette support shaft 8 and a drive motor 9 is provided. The vertical position of the cassette 7 set on the cassette support shaft 8 can be moved.
【０００６】搬送チャンバ３は、搬送アーム１１を備
え、半導体基板６をカセットチャンバ２と処理チャンバ
４との間で搬送する。The transfer chamber 3 includes a transfer arm 11 and transfers the semiconductor substrate 6 between the cassette chamber 2 and the processing chamber 4.
【０００７】処理チャンバ４は、半導体基板６に、例え
ば、酸化シリコンや金属の成膜処理を施す。The processing chamber 4 subjects the semiconductor substrate 6 to film formation processing of, for example, silicon oxide or metal.
【０００８】また、各チャンバ２，３，４は、ガス供給
孔１２ａ，１２ｂ，１２ｃと、ガス排気孔１３ａ，１３
ｂ，１３ｃとを有し、それぞれ、各ベント装置１４ａ，
１４ｂ，１４ｃと、各排気装置１５ａ，１５ｂ，１５ｃ
とに接続され、適宜、各チャンバ２，３，４内のガスを
給排気可能となっている。尚、図では、処理チャンバ４
を１つ配備する構成としたが、複数の処理チャンバを配
備する構成のものもある。Further, each of the chambers 2, 3 and 4 has gas supply holes 12a, 12b and 12c and gas exhaust holes 13a and 13c.
b, 13c, and each vent device 14a,
14b, 14c and each exhaust device 15a, 15b, 15c
The gas in each of the chambers 2, 3 and 4 can be appropriately supplied and exhausted. In the figure, the processing chamber 4
However, there is also a configuration in which a plurality of processing chambers are provided.
【０００９】次に、このＣＶＤ装置１の動作について説
明する。先ず、ゲートバルブ５ａ，５ｂを閉め、各チャ
ンバ２，３，４間を隔離し、カセットチャンバ２内は常
圧状態に、搬送チャンバ３と処理チャンバ４内は、予め
設定した減圧状態にする。Next, the operation of the CVD apparatus 1 will be described. First, the gate valves 5a and 5b are closed, the chambers 2, 3 and 4 are isolated from each other, the cassette chamber 2 is set to a normal pressure state, and the transfer chamber 3 and the processing chamber 4 are set to a preset reduced pressure state.
【００１０】次に、複数の半導体基板６を収納したカセ
ット７を開閉扉２ａからカセットチャンバ２内に搬入し
密閉した後、カセットチャンバ２内を排気装置１５ａに
より真空引きする。カセットチャンバ２内が、予め設定
した減圧状態になったら、ゲートバルブ５ａを開き、搬
送アーム１１で半導体基板６を搬送チャンバ３内に取出
し、ゲートバルブ５ａを閉じる。次に、ゲートバルブ５
ｂを開き、搬送アーム１１で半導体基板６を処理チャン
バ４内に搬入し載置し、搬送アーム１１を搬送チャンバ
３内に戻してゲートバルブ５ｂを閉じる。処理チャンバ
４内で所定の成膜処理が完了したら、ゲートバルブ５ｂ
を開き、搬送アーム１１で半導体基板６を搬送チャンバ
３内に取出し、ゲートバルブ５ｂを閉じ、次に、ゲート
バルブ５ａを開き、搬送アーム１１で半導体基板６をカ
セットチャンバ２内に搬入し、カセット７に収納する。
そして、搬送アーム１１を搬送チャンバ３内に戻してゲ
ートバルブ５ａを閉じる。以上の動作を順次、繰り返し
てカセット７に収納された全ての半導体基板６の処理を
行い、次のカセット７と交換する。Next, the cassette 7 containing a plurality of semiconductor substrates 6 is carried into the cassette chamber 2 through the opening / closing door 2a and hermetically closed, and then the inside of the cassette chamber 2 is evacuated by the exhaust device 15a. When the inside of the cassette chamber 2 reaches a preset depressurized state, the gate valve 5a is opened, the semiconductor substrate 6 is taken out into the transfer chamber 3 by the transfer arm 11, and the gate valve 5a is closed. Next, the gate valve 5
b is opened, the semiconductor substrate 6 is loaded into the processing chamber 4 by the transfer arm 11 and placed, the transfer arm 11 is returned into the transfer chamber 3, and the gate valve 5b is closed. When the predetermined film forming process is completed in the processing chamber 4, the gate valve 5b
Open, the semiconductor substrate 6 is taken out into the transfer chamber 3 by the transfer arm 11, the gate valve 5b is closed, then the gate valve 5a is opened, and the semiconductor substrate 6 is loaded into the cassette chamber 2 by the transfer arm 11 and Store in 7.
Then, the transfer arm 11 is returned into the transfer chamber 3 and the gate valve 5a is closed. The above operation is sequentially repeated to process all the semiconductor substrates 6 accommodated in the cassette 7, and the semiconductor substrate 6 is replaced with the next cassette 7.
【００１１】このように、同一のカセット７内に収納さ
れた半導体基板６を順次、プロセス処理する間は、３つ
のチャンバ２，３，４内を、それぞれの排気装置１５
ａ，１５ｂ，１５ｃにより恒に減圧状態に保ち、ゲート
バルブ５ａ，５ｂを開けても、互いに真空度を下げるこ
となくチャンバ２，３，４間で半導体基板６を搬送可能
とし、カセット７を交換するときだけ、ゲートバルブ５
ａを閉めてカセットチャンバ２内を常圧に戻す。As described above, while the semiconductor substrates 6 housed in the same cassette 7 are sequentially processed, the respective exhaust devices 15 in the three chambers 2, 3 and 4 are processed.
Even when the gate valves 5a and 5b are opened, the semiconductor substrate 6 can be transferred between the chambers 2, 3 and 4 even if the gate valves 5a and 5b are opened, and the cassette 7 is replaced. Gate valve 5 only when
The inside of the cassette chamber 2 is returned to normal pressure by closing a.
【００１２】次に、このカセット７交換の際の動作につ
いて説明する。同一のカセット７内の全ての半導体基板
６のプロセス処理が完了したら、ゲートバルブ５ａを閉
めた状態でベント装置１４ａから、パージガスとして例
えば、Ｎ２ガス（図中矢印で示す）を流入させカセット
チャンバ２内を略大気圧に戻す。その後、開閉扉２ａを
開けて処理済みのカセット７を取出し、次のカセット７
を搬入する。Next, the operation when replacing the cassette 7 will be described. When the process processing of all the semiconductor substrates 6 in the same cassette 7 is completed, for example, N 2 gas (indicated by an arrow in the figure) as a purge gas is introduced from the vent device 14a with the gate valve 5a closed, as a purge gas. The inside of 2 is returned to about atmospheric pressure. After that, the opening / closing door 2a is opened to remove the processed cassette 7, and the next cassette 7
Bring in.
【００１３】しかしながら、このとき、Ｎ２ガスの流入
速度が速いとカセットチャンバ２の内壁に付着していた
プラスあるいはマイナスに帯電したパーティクル１６
が、このＮ２気流のため舞い上がり、カセットチャンバ
２内を循環して、カセット７内に収納されている半導体
基板６を汚染する虞があった。特に、カセットチャンバ
２は、他のチャンバ３，４に比べて、カセット７交換に
より外部と直接連通する機会が多く、このため外部から
持ち込まれるパーティクル１６が多いことや、カセット
チャンバ２の内部においてもカセット７を昇降動作させ
る昇降機構１０を備えるため、どうしても、そこから発
生する金属から成るパーティクル１６を皆無にすること
は困難であり、ある程度のパーティクル１６が恒常的に
存在することは避けられなかった。However, at this time, if the inflow rate of the N 2 gas is high, the positive or negatively charged particles 16 adhering to the inner wall of the cassette chamber 2 are charged.
However, there is a possibility that the semiconductor substrate 6 housed in the cassette 7 may be contaminated due to the N 2 air flow, circulating in the cassette chamber 2, and contaminating the semiconductor substrate 6. In particular, the cassette chamber 2 has more opportunities to directly communicate with the outside by exchanging the cassette 7 than the other chambers 3 and 4, so that many particles 16 are brought in from the outside and also inside the cassette chamber 2. Since the raising / lowering mechanism 10 for raising / lowering the cassette 7 is provided, it is inevitable that the particles 16 made of metal generated from the cassette 7 are completely absent, and it is inevitable that a certain amount of the particles 16 are constantly present. .
【００１４】このため、ベント作業は、カセットチャン
バ２内に強い気流が発生しないように時間を掛けて少し
づつＮ２ガスを流入させる必要があった。しかし、ベン
ト時間を長くすることは、プロセス処理時間、真空引き
時間との兼ね合いによっては、ＣＶＤ装置１のインデッ
クスのネックとなり製品のスループットを低下させる虞
があった。For this reason, in the venting operation, it was necessary to gradually inject the N 2 gas over a period of time so that a strong air flow was not generated in the cassette chamber 2. However, increasing the vent time may become a bottleneck in the index of the CVD apparatus 1 depending on the balance between the process processing time and the vacuuming time, which may reduce the product throughput.
【００１５】[0015]
【発明が解決しようとする課題】上述したような従来の
半導体製造装置のカセットチャンバには、強制的にパー
ティクルを捕捉する機能がなかったため、ベント作業に
際して、強い気流が発生しないようにパージガスをゆっ
くりと流入する必要があった。しかし、ガスの流入速度
を遅くすると気流の発生は低減できるが、ベント時間が
長くなり、装置のインデックスを低下させるという二律
背反した問題があった。Since the cassette chamber of the conventional semiconductor manufacturing apparatus as described above does not have the function of forcibly capturing particles, the purge gas is slowly added so as not to generate a strong air flow during venting work. And had to flow in. However, if the gas inflow rate is slowed down, the generation of air flow can be reduced, but the venting time becomes longer and the index of the apparatus is lowered, which is a contradictory problem.
【００１６】本発明の目的は、カセットチャンバのベン
ト作業に際して、装置のインデックスを低下させること
なく、かつ、パーティクルの舞い上がりを防止するカセ
ットチャンバを備えた半導体製造装置を提供することで
ある。An object of the present invention is to provide a semiconductor manufacturing apparatus equipped with a cassette chamber which prevents the particles from rising up without lowering the index of the apparatus when venting the cassette chamber.
【００１７】[0017]
【課題を解決するための手段】本発明は、上記課題を解
決するために提案されたもので、半導体基板を収納する
カセットを格納して、半導体基板に各種プロセス処理を
施す処理チャンバとの間で搬出入可能とし、かつ、内部
圧力をガスの給排気により常圧または減圧状態に変化さ
せるカセットチャンバを備えた半導体製造装置におい
て、カセットチャンバ内に静電力によりパーティクルを
吸着するパーティクル吸着部を具備したことを特徴とす
る半導体製造装置である。SUMMARY OF THE INVENTION The present invention has been proposed to solve the above-mentioned problems, and a cassette for accommodating a semiconductor substrate is housed in a processing chamber for performing various process treatments on the semiconductor substrate. In a semiconductor manufacturing apparatus equipped with a cassette chamber that can be carried in and out by an internal pressure and that changes an internal pressure to a normal pressure or a reduced pressure state by supplying and exhausting gas, a particle adsorption unit that adsorbs particles by electrostatic force is provided in the cassette chamber. The semiconductor manufacturing apparatus is characterized by the above.
【００１８】[0018]
【発明の実施の形態】本発明のＣＶＤ装置の一例を図
１，図２に示す。図１は、縦断面図であり、図２は断面
斜視図である。尚、図３，図４と同一部分には同一符号
を用いる。マルチチャンバ方式のＣＶＤ装置１０１は、
カセットチャンバ１０２と、搬送チャンバ３と、処理チ
ャンバ４とで構成されている。1 and 2 show an example of a CVD apparatus according to the present invention. 1 is a vertical sectional view, and FIG. 2 is a sectional perspective view. The same parts as those in FIGS. 3 and 4 are designated by the same reference numerals. The multi-chamber type CVD apparatus 101 is
It is composed of a cassette chamber 102, a transfer chamber 3, and a processing chamber 4.
【００１９】カセットチャンバ１０２は、ゲートバルブ
５ａを介して搬送チャンバ３に連接し、搬送チャンバ３
は、ゲートバルブ５ｂを介して処理チャンバ４に連接し
ている。The cassette chamber 102 is connected to the transfer chamber 3 through the gate valve 5a, and the transfer chamber 3
Is connected to the processing chamber 4 via the gate valve 5b.
【００２０】カセットチャンバ１０２には、開閉扉２ａ
が設けられ、そこから半導体基板６を収納したカセット
７を搬出入可能とし、また、カセット支持軸８と駆動モ
ータ９とから成る昇降機構１０を備え、カセット支持軸
８にセットされたカセット７の上下位置を移動可能とし
ている。また、カセットチャンバ１０２内のパーティク
ル１６を静電力で吸着するパーティクル吸着部１０３を
具備している。パーティクル吸着部１０３は、例えば、
４つの絶縁板１０４ａ，１０４ｂ，１０４ｃ，１０４ｄ
上に貼付けられた平板電極１０５ａ，１０５ｂ，１０５
ｃ，１０５ｄと、直流電源１０６ａ，１０６ｂと、切換
スイッチ１０７ａ，１０７ｂとで構成され、対角位置に
配置する２枚を１組とし、１組の平板電極１０５ａ，１
０５ｂは、切換スイッチ１０７ａによって直流電源１０
６ａまたはアースに切換接続可能となっており、もう１
組の平板電極１０５ｃ，１０５ｄは、切換スイッチ１０
７ｂによって直流電源１０６ｂまたはアースに切換接続
可能となっている。また、４つの平板電極１０５ａ，１
０５ｂ，１０５ｃ，１０５ｄは、それぞれ絶縁板１０４
ａ，１０４ｂ，１０４ｃ，１０４ｄによって、カセット
チャンバ１０２の内壁と絶縁した状態で底部に配置し、
パーティクル１６を広い範囲で吸着するようになってい
る。尚、カセットチャンバ１０２の内壁は不所望な電位
を持たないようにアースしてある。The cassette chamber 102 has an opening / closing door 2a.
Is provided to allow the cassette 7 in which the semiconductor substrate 6 is stored to be carried in and out, and also includes an elevating mechanism 10 including a cassette support shaft 8 and a drive motor 9, and the cassette 7 set on the cassette support shaft 8 The vertical position can be moved. Further, a particle adsorption unit 103 that adsorbs the particles 16 in the cassette chamber 102 by electrostatic force is provided. The particle adsorption unit 103 is, for example,
Four insulating plates 104a, 104b, 104c, 104d
Plate electrodes 105a, 105b, 105 attached on top
c, 105d, DC power supplies 106a, 106b, and change-over switches 107a, 107b, two plates arranged diagonally to form one set, and one set of plate electrodes 105a, 1
05b is a direct current power source 10 by the changeover switch 107a.
6a or earth can be switched and connected.
The pair of flat plate electrodes 105c and 105d are connected to the changeover switch 10
It is possible to switch and connect to the DC power supply 106b or the ground by 7b. Also, four plate electrodes 105a, 1
05b, 105c and 105d are insulating plates 104, respectively.
a, 104b, 104c, 104d are arranged at the bottom of the cassette chamber 102 while being insulated from the inner wall of the cassette chamber 102,
The particles 16 are adsorbed in a wide range. The inner wall of the cassette chamber 102 is grounded so as not to have an undesired potential.
【００２１】搬送チャンバ３は、搬送アーム１１を備
え、半導体基板６をカセットチャンバ２と処理チャンバ
４との間で搬送する。The transfer chamber 3 includes a transfer arm 11 and transfers the semiconductor substrate 6 between the cassette chamber 2 and the processing chamber 4.
【００２２】処理チャンバ４は、半導体基板６に、例え
ば、酸化シリコンや金属の成膜処理を施す。The processing chamber 4 subjects the semiconductor substrate 6 to film formation processing of, for example, silicon oxide or metal.
【００２３】また、各チャンバ１０２，３，４は、ガス
供給孔１２ａ，１２ｂ，１２ｃと、ガス排気孔１３ａ，
１３ｂ，１３ｃとを有し、それぞれ、各ベント装置１４
ａ，１４ｂ，１４ｃと、各排気装置１５ａ，１５ｂ，１
５ｃとに接続され、適宜、各チャンバ１０２，３，４内
のガスを給排気可能となっている。尚、図では、処理チ
ャンバ４を１つ配備する構成としたが、複数の処理チャ
ンバを配備する構成のものもある。Each chamber 102, 3, 4 has a gas supply hole 12a, 12b, 12c and a gas exhaust hole 13a,
13b and 13c, and each vent device 14
a, 14b, 14c and each exhaust device 15a, 15b, 1
5c, so that the gas in each chamber 102, 3, 4 can be supplied / exhausted as appropriate. In the figure, one processing chamber 4 is provided, but there is also a configuration in which a plurality of processing chambers are provided.
【００２４】次に、このＣＶＤ装置１０１の動作につい
て説明する。先ず、ゲートバルブ５ａ，５ｂを閉め、各
チャンバ１０２，３，４間を隔離し、カセットチャンバ
１０２内は常圧状態に、搬送チャンバ３と処理チャンバ
４内は、予め設定した減圧状態にする。このとき、パー
ティクル吸着部１０３は、切換スイッチ１０７ａ，１０
７ｂを直流電源１０６ａ，１０６ｂ側に切換接続し、１
組の平板電極１０５ａ，１０５ｂをプラスに、もう１組
の平板電極１０５ｃ，１０５ｄをマイナスに帯電させ、
それぞれ、マイナスあるいはプラスに帯電したパーティ
クル１６を静電力で吸着可能とする。Next, the operation of the CVD apparatus 101 will be described. First, the gate valves 5a and 5b are closed, the chambers 102, 3 and 4 are isolated from each other, the cassette chamber 102 is set to a normal pressure state, and the transfer chamber 3 and the processing chamber 4 are set to a preset reduced pressure state. At this time, the particle adsorbing unit 103 operates the changeover switches 107a and 10a.
7b is switched and connected to the DC power sources 106a and 106b, and 1
The pair of plate electrodes 105a and 105b are charged positively, and the other pair of plate electrodes 105c and 105d are charged negatively,
The negatively or positively charged particles 16 can be attracted by electrostatic force.
【００２５】次に、複数の半導体基板６を収納したカセ
ット７を開閉扉２ａからカセットチャンバ１０２内に搬
入し密閉した後、カセットチャンバ１０２内を排気装置
１５ａにより真空引きする。カセットチャンバ１０２内
が、予め設定した減圧状態になったら、ゲートバルブ５
ａを開き、搬送アーム１１で半導体基板６を搬送チャン
バ３内に取出し、ゲートバルブ５ａを閉じる。次に、ゲ
ートバルブ５ｂを開き、搬送アーム１１で半導体基板６
を処理チャンバ４内に搬入し載置し、搬送アーム１１を
搬送チャンバ３内に戻してゲートバルブ５ｂを閉じる。
処理チャンバ４内で所定の成膜処理が完了したら、ゲー
トバルブ５ｂを開き、搬送アーム１１で半導体基板６を
搬送チャンバ３内に取出し、ゲートバルブ５ｂを閉じ、
次に、ゲートバルブ５ａを開き、搬送アーム１１で半導
体基板６をカセットチャンバ１０２内に搬入し、カセッ
ト７に収納する。そして、搬送アーム１１を搬送チャン
バ３内に戻してゲートバルブ５ａを閉じる。以上の動作
を順次、繰り返してカセット７に収納された全ての半導
体基板６の処理を行い、次のカセット７と交換する。Next, the cassette 7 containing a plurality of semiconductor substrates 6 is carried into the cassette chamber 102 through the opening / closing door 2a and hermetically sealed, and then the inside of the cassette chamber 102 is evacuated by the exhaust device 15a. When the inside of the cassette chamber 102 reaches a preset depressurized state, the gate valve 5
a is opened, the semiconductor substrate 6 is taken out into the transfer chamber 3 by the transfer arm 11, and the gate valve 5a is closed. Next, the gate valve 5b is opened, and the semiconductor substrate 6 is moved by the transfer arm 11.
Are loaded into the processing chamber 4 and placed therein, the transfer arm 11 is returned into the transfer chamber 3, and the gate valve 5b is closed.
When the predetermined film forming process is completed in the processing chamber 4, the gate valve 5b is opened, the semiconductor substrate 6 is taken out into the transfer chamber 3 by the transfer arm 11, and the gate valve 5b is closed.
Next, the gate valve 5 a is opened, and the semiconductor substrate 6 is loaded into the cassette chamber 102 by the transfer arm 11 and stored in the cassette 7. Then, the transfer arm 11 is returned into the transfer chamber 3 and the gate valve 5a is closed. The above operation is sequentially repeated to process all the semiconductor substrates 6 accommodated in the cassette 7, and the semiconductor substrate 6 is replaced with the next cassette 7.
【００２６】このようにして、同一のカセット７内に収
納された半導体基板６を順次、プロセス処理する間は、
３つのチャンバ１０２，３，４を、それぞれの排気装置
１５ａ，１５ｂ，１５ｃにより恒に減圧状態に保ち、ゲ
ートバルブ５ａ，５ｂを開けても、互いに真空度を下げ
ることなくチャンバ１０２，３，４間で半導体基板６を
搬送可能とし、カセット７を交換するときだけ、ゲート
バルブ５ａを閉めてカセットチャンバ１０２内を常圧に
戻す。Thus, while the semiconductor substrates 6 housed in the same cassette 7 are sequentially processed,
The three chambers 102, 3, 4 are kept in a constant depressurized state by the respective exhaust devices 15a, 15b, 15c, and even if the gate valves 5a, 5b are opened, the chambers 102, 3, 4 are not lowered in vacuum degree. The semiconductor substrate 6 can be transferred between them, and the gate valve 5a is closed to return the inside of the cassette chamber 102 to the normal pressure only when the cassette 7 is replaced.
【００２７】次に、このカセット７交換の際の動作につ
いて説明する。同一のカセット７内の全ての半導体基板
６のプロセス処理が完了したら、ゲートバルブ５ａを閉
めた状態でベント装置１４ａから、パージガスとして例
えば、Ｎ２ガス（図中矢印で示す）を流入させカセット
チャンバ１０２内を略大気圧に戻す。その後、開閉扉２
ａを開けて処理済みのカセット７を取出し、次のカセッ
ト７を搬入する。このとき、パーティクル吸着部１０３
は、ＯＮ状態であるため、カセットチャンバ１０２内の
パーティクル１６は、パーティクル吸着部１０３に静電
力でしっかりと吸着されるため、Ｎ２ガスの流入速度を
ある程度速くしても舞い上がることがない。尚、平板電
極１０５ａ，１０５ｂ，１０５ｃ，１０５ｄに付着した
パーティクル１６は、適宜、切換スイッチ１０７ａ，１
０７ｂをアース側に切換接続し、放電状態にして清掃す
る。Next, the operation of exchanging the cassette 7 will be described. When the process processing of all the semiconductor substrates 6 in the same cassette 7 is completed, for example, N 2 gas (indicated by an arrow in the figure) as a purge gas is introduced from the vent device 14a with the gate valve 5a closed, as a purge gas. The inside of 102 is returned to substantially atmospheric pressure. Then open / close door 2
Open a, take out the processed cassette 7, and carry in the next cassette 7. At this time, the particle adsorption unit 103
Is in the ON state, the particles 16 in the cassette chamber 102 are firmly adsorbed to the particle adsorbing portion 103 by electrostatic force, so that the particles 16 do not soar even if the inflow speed of the N 2 gas is increased to some extent. The particles 16 adhering to the plate electrodes 105a, 105b, 105c, 105d are appropriately transferred to the changeover switches 107a, 1
07b is connected to the ground side by switching, and is brought into a discharged state for cleaning.
【００２８】尚、上記の例では、ＣＶＤ装置１０１を用
いて説明したが、これに限るものではなくカセットチャ
ンバ１０２を具備する各種プロセス処理装置であれば、
スパッタ装置やエッチング装置であってもよい。また、
パーティクル吸着部１０３として、４つの平板電極１０
５ａ，１０５ｂ，１０５ｃ，１０５ｄを配置し、２つづ
つを１組とし互いに異極に帯電する構成としたが、特に
これに限るものではなく、比較的簡単な構成として、平
板電極を１枚配置し、それをマイナスに帯電させ、カセ
ットチャンバ内に多い金属から成るプラスに帯電したパ
ーティクルを吸着する構成としてもよい。In the above example, the CVD apparatus 101 is used for description, but the present invention is not limited to this, and any process processing apparatus having the cassette chamber 102 can be used.
It may be a sputtering device or an etching device. Also,
As the particle adsorption portion 103, four flat plate electrodes 10
5a, 105b, 105c, 105d are arranged and two of them are set as one set to be charged with different polarities, but the present invention is not particularly limited to this, and one flat plate electrode is arranged as a relatively simple structure. However, it may be configured to be negatively charged and to adsorb positively charged particles made of a large amount of metal in the cassette chamber.
【００２９】[0029]
【発明の効果】本発明の半導体製造装置では、外部から
の持ち込みや、カセットの昇降機構から発生するパーテ
ィクルが多いことが予想されるカセットチャンバに、パ
ーティクルを強制的に吸着するパーティクル吸着部を備
えるため、ベント作業の際のガスの流入速度をある程度
速くしても、気流でパーティクルが舞い上がることを防
止できる。このため、ベント作業に掛かる時間がネック
になって装置のインデックスを低下させる虞がない。ま
た、パーティクル吸着部を複数配置し、それらを２つに
分けて一方をプラスに、他方をマイナスに帯電させる構
成とすると、プラス，マイナスいずれに帯電したパーテ
ィクルをも吸着できて好適である。According to the semiconductor manufacturing apparatus of the present invention, the cassette chamber, which is expected to have a large number of particles brought in from the outside or generated from the elevating mechanism of the cassette, is provided with the particle adsorbing section for forcibly adsorbing the particles. Therefore, even if the gas inflow rate at the time of venting is increased to some extent, it is possible to prevent particles from rising in the air flow. Therefore, there is no possibility that the time required for the vent work becomes a bottleneck and the index of the apparatus is lowered. Further, it is preferable that a plurality of particle adsorbing portions are arranged, and these are divided into two and one of them is charged positively and the other is charged negatively, because particles charged in either plus or minus can be adsorbed.
【図１】 本発明のＣＶＤ装置の一例を示す縦断面図FIG. 1 is a vertical sectional view showing an example of a CVD apparatus of the present invention.
【図２】 本発明のＣＶＤ装置の一例を示す断面斜視図FIG. 2 is a sectional perspective view showing an example of the CVD apparatus of the present invention.
【図３】 従来のＣＶＤ装置の縦断面図FIG. 3 is a vertical sectional view of a conventional CVD apparatus.
【図４】 従来のＣＶＤ装置の平面図FIG. 4 is a plan view of a conventional CVD apparatus.
４ 処理チャンバ ６ 半導体基板 ７ カセット １６ パーティクル １０１ ＣＶＤ装置 １０２ カセットチャンバ １０３ パーティクル吸着部 4 processing chamber 6 Semiconductor substrate 7 cassettes 16 particles 101 CVD equipment 102 cassette chamber 103 Particle adsorption part
Claims (2)
て、前記半導体基板に各種プロセス処理を施す処理チャ
ンバとの間で搬出入可能とし、かつ、内部圧力をガスの
給排気により常圧または減圧状態に変化させるカセット
チャンバを備えた半導体製造装置において、前記カセッ
トチャンバ内に静電力によりパーティクルを吸着するパ
ーティクル吸着部を具備したことを特徴とする半導体製
造装置。1. A cassette for accommodating a semiconductor substrate is stored so that it can be carried in and out of a processing chamber for performing various process treatments on the semiconductor substrate, and the internal pressure is atmospheric pressure or reduced pressure by gas supply / exhaust. A semiconductor manufacturing apparatus provided with a cassette chamber for changing the state, wherein the cassette chamber is provided with a particle adsorbing section for adsorbing particles by electrostatic force.
の電極板から成り、前記電極板を２つに分けて、一方は
プラスに、他方はマイナスに帯電することを特徴とする
請求項１に記載の半導体製造装置。2. The particle adsorbing part is composed of a plurality of flat plate-like electrode plates, and the electrode plates are divided into two parts, one of which is positively charged and the other of which is negatively charged. The semiconductor manufacturing apparatus according to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002068689A JP2003273188A (en) | 2002-03-13 | 2002-03-13 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002068689A JP2003273188A (en) | 2002-03-13 | 2002-03-13 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003273188A true JP2003273188A (en) | 2003-09-26 |
Family
ID=29199726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002068689A Pending JP2003273188A (en) | 2002-03-13 | 2002-03-13 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003273188A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336936C (en) * | 2003-12-24 | 2007-09-12 | 上海宏力半导体制造有限公司 | Process for reducing particles in low pressure chemical vapor deposition equipment |
| WO2008083026A1 (en) * | 2006-12-27 | 2008-07-10 | Varian Semiconductor Equipment Associates, Inc. | Active particle trapping for process control |
| JP2018037475A (en) * | 2016-08-30 | 2018-03-08 | 株式会社日立ハイテクマニファクチャ＆サービス | Wafer transfer apparatus |
| JP2022170477A (en) * | 2021-04-28 | 2022-11-10 | シンフォニアテクノロジー株式会社 | Efem |
| EP4672308A1 (en) * | 2024-06-24 | 2025-12-31 | ASML Netherlands B.V. | SUBSTRATE STORAGE SYSTEM, SUBSTRATE HANDLING DEVICE, METHOD FOR TEMPORARILY STORING A SUBSTRATE |
-
2002
- 2002-03-13 JP JP2002068689A patent/JP2003273188A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100336936C (en) * | 2003-12-24 | 2007-09-12 | 上海宏力半导体制造有限公司 | Process for reducing particles in low pressure chemical vapor deposition equipment |
| WO2008083026A1 (en) * | 2006-12-27 | 2008-07-10 | Varian Semiconductor Equipment Associates, Inc. | Active particle trapping for process control |
| JP2018037475A (en) * | 2016-08-30 | 2018-03-08 | 株式会社日立ハイテクマニファクチャ＆サービス | Wafer transfer apparatus |
| JP2022170477A (en) * | 2021-04-28 | 2022-11-10 | シンフォニアテクノロジー株式会社 | Efem |
| JP7795068B2 (en) | 2021-04-28 | 2026-01-07 | シンフォニアテクノロジー株式会社 | EFEM |
| EP4672308A1 (en) * | 2024-06-24 | 2025-12-31 | ASML Netherlands B.V. | SUBSTRATE STORAGE SYSTEM, SUBSTRATE HANDLING DEVICE, METHOD FOR TEMPORARILY STORING A SUBSTRATE |
| WO2026002464A1 (en) * | 2024-06-24 | 2026-01-02 | Asml Netherlands B.V. | Substrate storage system, substrate handling apparatus, method of temporarily storing a substrate |
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