JP2003249660A - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that a threshold value becomes too large when a metal gate composed of W, TiN, etc., is used since electric field strength in a semiconductor layer becomes too small in a thin gate oxide film structure, although it is effective that difference between potentials in a vertical direction in the semiconductor layer is made small, when substrate floating effect is restrained in a field effect transistor formed on an SOI substrate. <P>SOLUTION: Conductive material constituting a gate electrode is changed in accordance with a channel type. A dummy gate electrode wherein a lower layer is composed of conductive material and an upper layer is constituted of silicon nitride films is arranged, and source/drain regions of a first or a second conductivity type are arranged on both sides of the dummy gate electrode in accordance with a channel type of a transistor. After that, at least the dummy gate electrode in a region where a transistor of one conductivity type is to be arranged is eliminated, conductive material different from that of the dummy gate electrode is embedded in an obtained slit being in contact with a gate insulating film, and a gate electrode is formed, thereby mixedly disposing gate electrodes composed of different materials on a semiconductor substrate. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a field effect transistor (SOI-MOSFET, which is abbreviated as SOI-MOSFET in which a channel is formed in a semiconductor layer on an insulator to perform a transistor operation. Sil
icon on Insulator or Semi
The present invention relates to a method for manufacturing a semiconductor device, which suppresses the substrate floating effect, in the abbreviation of “conductor on insulator”.

[0002]

2. Description of the Related Art In a field effect transistor of the first conductivity type using a normal semiconductor substrate, surplus carriers of the second conductivity type are discharged to the semiconductor substrate, so that the carriers of the second conductivity type do not remain near the channel. There is no. As an example, FIG. 11A shows a case of an n-channel field effect transistor in which the first conductivity type is n-type.

In the figure, 301 is a p-type silicon substrate, 306 is an n ⁺ type source region, 307 is an n ⁺ type drain region, 30
Reference numeral 4 is a gate oxide film, 305 is a gate electrode, and 308 is a channel formation region. In this case, the first conductivity type carrier is an electron and is shown by a symbol e in the figure, and the second conductivity type carrier is a hole and is shown by a symbol h in the figure. Even if excess holes h are generated due to carriers colliding with atoms in the vicinity of the n ⁺ type drain region 307 during transistor operation, the holes h flow to the lower side of the p type silicon substrate 301. It does not remain near the channel. Here, the channel formation region 308 means a position where a channel is formed on the surface of the p-type silicon substrate 301 and a portion below the position where the channel is formed when a voltage higher than a threshold voltage is applied to the gate electrode. Indicates a semiconductor region having a low impurity concentration.

However, a field effect transistor (SOI-) having a channel formed in a silicon semiconductor layer on an insulator is formed.
In the MOSFET, there is a problem that the surplus second-conductivity-type carriers are not effectively removed because of the insulator under the silicon semiconductor layer. The phenomenon is referred to as n-channel SO
FIG. 11B shows an example of the case of the I-MOSFET.

Reference numeral 311 denotes a supporting substrate 312, 31 for supporting an SOI structure (a structure in which a semiconductor layer is provided on an insulator).
Reference numeral 3 designates a buried oxide film and a silicon semiconductor layer (SOI layer) which respectively constitute the SOI structure. In this case, the excess holes h cannot flow into the support substrate 311 because they are obstructed by the buried oxide film 312 that is an insulator. Therefore, excess holes are accumulated in the vicinity of the channel, and the characteristics of the element such as the threshold voltage (the value of the gate voltage at which the transistor changes from the off state to the on state) change.

This problem is called a floating body effect or a parasitic bipolar effect. The surplus second-conductivity type carriers are holes in the n-type field effect transistor and electrons in the p-type field effect transistor.

Excessive second conductivity type carriers are generated when any of the following four causes occurs. These causes will be described by taking an n-type field effect transistor as an example.

(First cause) The electrons in the channel are accelerated at the drain end to cause impact ionization and generate holes.

(Second cause) Excess carriers are generated due to a change in potential distribution accompanying a change in gate voltage. Details are as follows. Generally, in a fully depleted type SOI-MOSFET (SOI-MOSFET in which a silicon semiconductor layer becomes a depletion layer at least when a voltage higher than a threshold voltage is applied to the gate), silicon is used when the gate voltage is low. The potential of the semiconductor layer is lowered and the hole concentration in the silicon semiconductor layer is in an equilibrium state at a high value. On the other hand, when the gate voltage is high, the potential of the silicon semiconductor layer is high, and the equilibrium state is reached when the hole concentration in the silicon semiconductor layer is low. Here, during the circuit operation, the gate voltage once becomes low (including the case where the gate-to-source voltage becomes relatively low as a result of the increase in the source potential), and the equilibrium is reached in the state where the hole concentration is high, When the gate-to-source voltage is changed to a high voltage, the equilibrium concentration of holes in the silicon semiconductor layer changes from a high value to a low value. The holes are not promptly removed, and holes that are excessive with respect to the equilibrium concentration at the time of a high gate voltage remain in the silicon semiconductor layer. In addition, a partially depleted SOI-MOSFET (an SOI-MO in which the silicon semiconductor layer does not become a depletion layer completely even if it is higher than a threshold voltage)
SFET) has a narrow depletion layer at a low gate voltage, so that equilibrium is achieved in a state where the amount of holes in the silicon semiconductor layer is large. Since equilibrium is achieved in a small amount,
As with the fully depleted SOI-MOSFET, excess carriers are generated when the gate-to-source voltage is changed from a low voltage to a high voltage.

(Third cause) Excess carriers are generated due to a change in potential distribution accompanying a change in source voltage or drain voltage. The second cause is that when the drain voltage and the source voltage change and the potential distribution in the silicon semiconductor layer changes, the hole concentration in the equilibrium state or the total amount of holes in the equilibrium state changes accordingly. The effect is similar to the case of.

(Fourth cause) Electron-hole pairs are generated by high-energy particles such as alpha rays, and electrons are absorbed in the drain, while holes remain in the silicon semiconductor layer. That is.

There is also a substrate floating effect that occurs in the reverse order of the above process. This is because in a normal first conductivity type field effect transistor, the second conductivity type carrier is supplied from the substrate, whereas in the SOI-MOSFET there is a buried insulating layer, so the second conductivity type carrier is This is a problem in that the second conductivity type carrier is not supplied from the substrate, and the characteristics fluctuate. This is the second cause above,
The third cause is that the second-conductivity-type carrier becomes excessive, and the problem is the opposite side. This is the second cause above,
This occurs when the bias voltage is changed in the reverse order of the case where excess carriers are generated due to the third cause.
It can be said that this is not a surplus carrier but a substrate floating effect caused by a shortage of carriers.

In order to suppress the substrate floating effect, it is effective to reduce the potential difference in the vertical direction in the silicon semiconductor layer to reduce the potential barrier when excess carriers flow into the source. This is described, for example, by Tsuchiya et al. In Non-Patent Document 1 (I.E.E., Transaction of Electron Devices, Vol. 45, pages 1116 to 1121 (T. Tsuchiya et al.,
IEEE Trans. Electron Devi
ces, in particular, drawing 4)), Y. et al., Non-Patent Document 2 (Electronic Information and Communication Engineers, English Journal, E80-C, pages 893 to 898 (R. Koh, et al., IEICE Trans.
Electron. In particular, they are described in Figures 7 and 8)).

[0014]

[Non-Patent Document 1] IEEE Trans. Elect
ron Devices Volume 45 (1116-1121)
Page, drawing 4)

[Non-patent Document 2] IEICE English journal, E80
Volume C (Pages 893-898, Drawings 7 and 8)

[0015]

When it is attempted to suppress the substrate floating effect by reducing the potential difference in the vertical direction in the SOI layer, the electric field in the vertical direction is reduced, and as a result, a fine SOI- having a thin gate oxide film is formed. In MOSFETs, the threshold voltage is too low for n-channel transistors and too high for p-channel transistors (the absolute value of the threshold voltage with respect to the source voltage is too low). If an ordinary metal gate is used here to increase the threshold voltage in the n-channel transistor or decrease the threshold voltage in the p-channel transistor, the threshold voltage becomes too high in the n-channel transistor, The p-channel transistor is too low (the absolute value of the threshold voltage based on the source voltage is too high). In particular, when a metal gate is used for the p-type field effect transistor, the absolute value of the threshold value becomes too high (because of the influence of the interface charge and fixed charge on the back side of the SOI layer). In addition, when the potential difference in the SOI layer is reduced, a back channel is easily formed when the drain voltage is high, which deteriorates the characteristics. These are usually due to the work function of Ta, TiN, W, etc., which are the materials used for the metal gate, in the vicinity of the center of the forbidden band of silicon.

An object of the present invention is to provide a semiconductor device formed on an SOI substrate (semiconductor substrate having an SOI structure),
It is an object of the present invention to provide a method for manufacturing a semiconductor device equipped with a field effect transistor capable of suppressing the substrate floating effect and suppressing the back channel.

[0017]

According to a first method of manufacturing a semiconductor device of the present invention, in a substrate having a semiconductor region at least on its surface, a first conductivity type transistor formation region and a second conductivity type transistor are formed in the semiconductor region. Forming a first insulating film on the semiconductor region, depositing a mask material layer at least a lower layer of which is a second conductive material, and patterning the mask material layer. A dummy gate electrode is provided in the formation region of the first conductivity type transistor, and a second gate electrode is provided in the formation region of the second conductivity type transistor.
The first insulating film below the second gate electrode is made into a second gate insulating film, and the dummy gate electrode is used as a mask in the formation region of the first conductivity type transistor to form the dummy gate electrode. A source / drain region of the first conductivity type is provided on both sides, and in the formation region of the transistor of the second conductivity type, the second gate electrode is used as a mask and the source / drain region of the second conductivity type is formed on both sides of the second gate electrode. A source / drain region is provided, and at least above the source / drain region of the first conductivity type, the source / drain region of the second conductivity type is provided.
A second layer is formed on the first insulating film so as to cover the second gate electrode and the dummy gate electrode above the drain region.
An insulating film is deposited, at least a part of the second insulating film above the dummy gate electrode is removed to expose the dummy gate electrode, and a slit is provided by selectively removing the dummy gate electrode, In the slit, the first gate electrode is formed by embedding a first conductive material on the semiconductor region via a first gate insulating film, and regarding the n-type field effect transistor, When the first conductivity type is n-type and the second conductivity type is p-type, a part of the first gate electrode of the n-type transistor that is in contact with the first gate insulating film is formed. The work function of the first conductive material is
It is larger than the absolute value of the energy difference between the vacuum level and the bottom of the silicon conduction band, and is more than the absolute value of the vacuum level minus the energy corresponding to the middle between the bottom of the conduction band of silicon and the center of the forbidden band of silicon. Small, specifically, the first gate electrode of the n-type transistor among the first gate electrode
The first conductive material forming the portion in contact with the gate insulating film is erbium silicide.

Regarding the p-type field effect transistor,
When the first conductivity type is n-type and the second conductivity type is p-type, at least a portion of the mask material layer that is in contact with the first insulating film is formed of the second conductive material. The work function is smaller than the absolute value of the energy difference between the vacuum level and the top of the silicon valence band, and the energy corresponding to the middle of the top of the valence band of silicon and the center of the forbidden band of silicon is subtracted from the vacuum level. Greater than the absolute value of the value, specifically, at least the first of the mask material layers.
The second conductive material forming the portion in contact with the insulating film is a polycrystalline silicon germanium mixed crystal.

Further, in the above method of manufacturing a semiconductor device,
As the mask material layer, a laminated film of p ⁺ type silicon germanium mixed crystal and silicon nitride film is used in this order from the bottom.

Next, according to a second method of manufacturing a semiconductor device of the present invention, in a substrate having a semiconductor region at least on the surface thereof, a first conductivity type transistor formation region and a second conductivity type transistor formation region are formed in the semiconductor region. And are set,
After forming a third insulating film on the semiconductor region, a mask material layer is deposited and the mask material layer is patterned to form a first dummy gate electrode in the formation region of the first conductivity type transistor. A second dummy gate electrode is provided in the formation region of the second conductivity type transistor, and the first dummy gate electrode is masked in the formation region of the first conductivity type transistor by using the first dummy gate electrode as a mask. Source / drain regions of the first conductivity type are provided on both sides of the second dummy gate electrode in the transistor formation region of the second conductivity type, and second source / drain regions are formed on both sides of the second dummy gate electrode. A conductive type source / drain region is provided, or the second conductive type transistor is formed in the formation region of the second conductive type transistor.
Second conductive type source / drain regions are provided on both sides of the second dummy gate electrode by using the dummy gate electrode as a mask, and the first dummy gate electrode is formed in the first conductive type transistor forming region. A source of the first conductivity type is formed on both sides of the first dummy gate electrode as a mask.
By providing a drain region, at least the source / drain region of the first conductivity type and the source / drain region of the second conductivity type /
A fourth insulating film is deposited so as to cover the drain region, the first dummy gate electrode and the second dummy gate electrode, and the fourth insulating film is deposited so that at least the upper part of the first dummy gate electrode is exposed. A part of the insulating film is removed, the exposed first dummy gate electrode is removed to provide a first slit, and a third gate insulating film is provided on the semiconductor region in the first slit. A third gate electrode is formed by embedding a third conductive material, the second dummy gate electrode is removed and a second slit is provided, and a second slit is provided on the semiconductor region in the second slit. The fourth conductive material is embedded through the fourth gate insulating film to form the fourth
It is characterized in that the gate electrode is formed.

Regarding the n-type field effect transistor,
When the first conductivity type is n-type and the second conductivity type is p-type, the third gate electrode of the n-type transistor, which constitutes a portion in contact with the third gate insulating film, is formed. The work function of the conductive material of 3 is larger than the absolute value of the energy difference between the vacuum level and the lower end of the silicon conduction band, and the work function of the conductive material is between the lower end of the conduction band of silicon and the center of the forbidden band of silicon. It is smaller than the absolute value of the value obtained by subtracting the corresponding energy, and the first conductivity type is the p type and the second conductivity type is the second type.
When the conductivity type is n-type, the work function of the fourth conductive material forming a part of the fourth gate electrode of the n-type transistor which is in contact with the fourth gate insulating film is It is larger than the absolute value of the energy difference between the vacuum level and the bottom of the silicon conduction band, and is more than the absolute value of the vacuum level minus the energy corresponding to the middle between the bottom of the conduction band of silicon and the center of the forbidden band of silicon. Small, specifically, when the first conductivity type is n-type and the second conductivity type is p-type, among the third gate electrodes of the n-type transistor,
When the first conductive type is p-type and the second conductive type is n-type, the third conductive material forming a portion in contact with the third gate insulating film is the n-type transistor Four
Of the gate electrode, the fourth conductive material forming a portion in contact with the fourth gate insulating film is erbium silicide.

Regarding the p-type field effect transistor,
When the first conductivity type is n-type and the second conductivity type is p-type, the fourth gate electrode of the p-type transistor, which constitutes a portion of the fourth gate electrode in contact with the fourth gate insulating film, is formed. The work function of the conductive material of No. 4 is smaller than the absolute value of the energy difference between the vacuum level and the upper end of the silicon valence band. When the first conductivity type is p-type and the second conductivity type is n-type, which is larger than an absolute value of a value obtained by subtracting energy corresponding to the middle, among the third gate electrodes of the p-type transistor, The work function of the third conductive material forming the portion in contact with the third gate insulating film is smaller than the absolute value of the energy difference between the vacuum level and the upper end of the silicon valence band, and the vacuum level is From the top of the valence band of silicon and silicon Is larger than the absolute value of the value obtained by subtracting the energy corresponding to the middle of the forbidden band, and more specifically, when the first conductivity type is n-type and the second conductivity type is p-type, p Of the fourth gate electrode of the n-type transistor, the fourth conductive material forming a portion in contact with the fourth gate insulating film, the first conductivity type is p-type, and the second conductivity type is n-type. In the case of a p-type transistor, the third conductive material forming a portion of the third gate electrode of the p-type transistor that is in contact with the third gate insulating film is p ⁺ type polysilicon or p ⁺ type. It is either a polycrystalline silicon germanium mixed crystal or platinum silicide.

In the second method for manufacturing a semiconductor device of the present invention described above, specifically, the first conductivity type is n-type and the second conductivity type is the second conductivity type.
When the conductivity type is p-type, the configuration of the third gate electrode is such that at least erbium silicide in contact with the third gate insulating film and p ⁺ -type polysilicon or p ⁺ -type polycrystalline silicon covering the erbium silicide The third gate is formed by including at least a portion of the fourth gate electrode that is in contact with the fourth gate insulating film, the first gate electrode including at least a germanium mixed crystal or platinum silicide. The electrode also has a configuration that it is the same as the material that covers the erbium silicide, and that the mask material layer is a silicon nitride film.

As a mode common to the first and second methods of manufacturing a semiconductor device of the present invention described above, a semiconductor in which the substrate serves as a support substrate, an insulator on the support substrate, and an element formation region covering the insulator. It has a structure in which it is composed of regions or the entire substrate is a semiconductor.

[0025]

A field effect transistor according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1A is a cross-sectional view of the field effect transistor according to the first embodiment of the present invention, and FIG. 2 is a potential distribution along the cutting line XX ′ of FIG.

The semiconductor layer 3 is provided on the buried insulating film 2 on the support substrate 1, and the gate electrode 5 made of a conductor having a certain width is formed on the semiconductor layer 3 with the gate insulating film 4 interposed therebetween. It On both sides of the gate electrode 5, an n ⁺ type source region 6 and an n ⁺ type source region 6 in which n type impurities are introduced into the semiconductor layer 3 at a high concentration are formed.
^In the semiconductor layer 3 in which the ⁺ type drain region 7 is formed and is sandwiched between the n ⁺ type source region 6 and the n ⁺ type drain region 7, a channel formation is performed in which an n type inversion layer is formed on the surface of the semiconductor layer 3 when a gate voltage is applied. The area 8 is formed (FIG. 1A).

The impurity concentration of the channel forming region 8 is n ⁺
When the source region 6 is grounded, the power supply voltage is applied to the n ⁺ drain region 7, and the threshold voltage is applied to the gate electrode 5, the potential of the surface of the semiconductor layer 3 is higher than that of the interface between the semiconductor layer and the buried insulating film. It is set to be high and satisfy the condition that the channel forming region 8 in the semiconductor layer 3 becomes a depletion layer completely. FIG. 2 shows a vertical cross section including a potential barrier portion (a lateral position at which the potential on the surface of the semiconductor layer 3 is lowest when the lateral dependency of the potential on the surface of the semiconductor layer 3 is viewed) under these conditions ( 1A is taken along the line XX '. The potential barrier portion is normally located near the center of the channel formation region when the drain voltage is low, and closer to the source than the center of the channel formation region when the drain voltage increases.) The potential distribution at is shown.

Here, the work function of the material forming at least the portion of the gate electrode 5 in contact with the gate insulating film 4 is larger than the absolute value of the energy difference between the vacuum level and the lower end of the silicon conduction band, and the vacuum level is Is smaller than the absolute value of the value obtained by subtracting the energy corresponding to the middle between the bottom of the conduction band of silicon and the center of the forbidden band of silicon.

Specific materials and dimensions are as follows, for example. The supporting substrate 1 is a p-type silicon substrate, the buried insulating film 2 is a silicon oxide film having a thickness of 100 nm, and the semiconductor layer 3 is a thickness of 5
0 nm single crystal silicon layer, gate insulating film 4 has a thickness of 3 n
m thermal oxide film (SiO 2), the gate electrode 5 is an erbium silicide layer, the gate length (the length of the gate electrode in the source-drain direction) is 0.1 μm, and the n ⁺ type source regions 6 and n are formed.
^{The positive} drain region 7 has 1 × 10 ²⁰ atoms / cm ³
Arsenic is introduced into the channel formation region 8 at 4 to 8 × 1.
0 ¹⁷ atoms / cm ³ , typically 5 to 7 × 10 ¹⁷ t
Boron of oms / cm ³ is introduced. As for the gate electrode 5, a layer of another material may be provided on the erbium silicide layer. The work function relationship is that the Fermi energy of the material forming the part of the gate electrode in contact with the gate insulating film is on the valence band side of the minimum of the conduction band of silicon and the silicon midgap (conduction band of the conduction band). The condition may be replaced by the condition that it is on the side of the conduction band rather than just between the minimum and the maximum of the valence band, that is, between the middle of the forbidden band and the bottom of the conduction band.

Next, in the semiconductor device according to the second embodiment of the present invention, the p-type field effect transistor described below and the n-type field effect transistor according to the first embodiment are formed on the same substrate. Form. The structure of the p-type field effect transistor will be described with reference to the sectional view of FIG.

In the p-type field effect transistor,
The semiconductor layer 3 is provided on the embedded insulating film 2 on the support substrate 1, and the gate electrode 15 made of a conductor having a certain width is formed on the semiconductor layer 3 via the gate insulating film 14. On both sides of the gate electrode 15, p ⁺ -type source regions 16 and p ⁺ in which p-type impurities are introduced into the semiconductor layer 3 at a high concentration are formed.
^{The +} type drain region 17 is formed, and the p ⁺ type source region 1 is formed.
6 and the p ⁺ type drain region 17 sandwich the semiconductor layer 3 between
With the application of the gate voltage, a p-type inversion layer is formed on the surface thereof to form a channel formation region 18 (FIG. 1 (b)).

The impurity concentration of the channel forming region 18 is p
^{In the state} where the power supply voltage is applied to the ⁺ type source region 16, the p ⁺ type drain region 17 is grounded, and the threshold voltage is applied as the gate electrode-to-source voltage, the surface potential of the semiconductor layer 3 becomes It is set to be lower than the potential of the interface of the embedded insulating film and satisfy the condition that the channel forming region 18 in the semiconductor layer 3 becomes a depletion layer completely.

Here, the work function of the material forming at least the portion of the gate electrode 15 in contact with the gate insulating film 14 is from the vacuum level to the middle between the upper end of the valence band of silicon and the center of the forbidden band of silicon. It is larger than the absolute value of the value obtained by subtracting the corresponding energy.

Specific materials and dimensions are as follows, for example. The support substrate 11 is a p-type silicon substrate, the buried insulating film 1
2 is a 100-nm-thick silicon oxide film, semiconductor layer 3 is a 50-nm-thick single crystal silicon layer, gate insulating film 14 is a 3-nm-thick thermal oxide film (SiO 2), and gate electrode 15 is p.
⁺ Polysilicon layer, gate length (length of gate electrode in source-drain direction) is 0.1 μm, p ⁺ type source region 1
6 and p ⁺ type drain region 17 has 1 × 10 ²⁰ atoms
/ Cm ³ of boron is introduced, and the channel formation region 18 is 4 to 8 × 10 ¹⁷ atoms / cm ³ , typically 5 to 5.
7 × 10 ¹⁷ atoms / cm ³ of phosphorus is introduced.

The thickness of the semiconductor layer 3 in the device region shown in FIG. 1 is typically about 30 nm to 100 nm, but there is no particular limitation.

For the gate electrode 15, a layer of another material may be provided on the p ⁺ polysilicon layer. The work function relationship is that the Fermi energy of the material forming the part of the gate electrode in contact with the gate insulating film is the midgap of silicon (just between the minimum of the conduction band and the maximum of the valence band, that is, the center of the forbidden band). It may be replaced with the condition that it is closer to the valence band than the middle of the upper end of the valence band.

Further, the work function of the material forming the portion of the gate electrode 15 in contact with the gate insulating film is smaller than the absolute value of the energy difference between the vacuum level and the upper end of the silicon valence band. The material may be selected so that the value is larger than the absolute value of the value obtained by subtracting the energy corresponding to the middle between the upper end of the valence band and the center of the forbidden band of silicon. Materials that satisfy this condition include p ⁺ polycrystalline silicon germanium (SiGe) and platinum silicide.

In general, the work function of a material is defined as the absolute value of the difference between the vacuum level and the Fermi level of the material. However, in the case of a semiconductor, the effective work function is different from the difference between the vacuum level and the Fermi level because the Fermi level is in the forbidden band where no carriers exist. The effective work function is usually almost the absolute value of the difference between the vacuum level and the energy at the bottom of the conduction band for n-type semiconductors, and the absolute value of the difference between the vacuum level and the energy at the top of the valence band for p-type semiconductors. Since they are the same, the work function of a semiconductor usually refers to these effective work functions. Therefore, in this specification, it is described that the work function is larger than the absolute value of the energy difference between the vacuum level and the lower end of the silicon conduction band, because the work function is higher than the work function of n-type silicon (or n-type polysilicon). It is equal to what is usually described as being large, and it is described that the work function is smaller than the absolute value of the energy difference between the vacuum level and the top of the silicon valence band because the work function is p-type silicon (or p-type polysilicon). Less than the work function of is equal to what is usually stated. When the impurity concentration is extremely high, even in a semiconductor, the Fermi level may be in the conduction band or the valence band, but it is considered that the difference from the case of using the above definition is small, and in the present invention, I think that it is good to design using the definition.

Further, the transistor of the present invention obtains its effect by using a material having a work function corresponding to the energy difference between the energy in the forbidden band of silicon and the vacuum level. The material used for the gate electrode must have no forbidden band at an energy level satisfying the required work function relationship. Therefore, neither silicon nor polysilicon is suitable as a material for the gate electrode (the band gap of polysilicon is slightly different from the band gap of silicon, but it is not sufficient to obtain the effect of the present invention). Although the Fermi level can be set in the forbidden band by lowering the impurity concentration of the polysilicon gate, the work function corresponding to the Fermi level set in the normal state cannot be obtained because it is in the forbidden band.
Similarly, when the Fermi level is set in the forbidden band, there arises a problem that the impurity concentration of the gate electrode becomes low and the gate resistance increases. Specifically, in the present invention, the gate electrode has a metal silicide (erbium silicide, platinum silicide, etc.), a compound containing another metal element, a metal, etc.
Use a material whose Fermi level is not in the forbidden band. Alternatively, a semiconductor such as Ge or SiGe having a forbidden band position different from that of silicon is used. However, as will be described later, it may be possible to use polysilicon for the gate only in the case of a p-channel transistor.

In the first and second embodiments of the present invention described above, what effects the configuration of the present invention brings about will be described below with a theoretical reason.

Band diagrams showing the effects of the present invention are shown in FIGS. 3 and 4 by taking an n-type field effect transistor as an example. here,
The state in which the energy is larger than that of the electron is taken on the upper side. In the figure, E _c is the minimum value (lower end) of the conduction band, and E _v is the maximum value (upper end) of the valence band. 3 (a), (b) and FIG.
FIG. 4A shows a case where n ⁺ polysilicon is used for the gate, and FIG.
4B shows a case of a normal metal gate, and FIG. 4C shows a case of the present invention. The gate voltages were all the same. In this case, the gate potential is shown in FIG.
It is highest in (b) and FIG. 4 (a), and next is in FIG.
The present invention in (c) is the case of FIG. 4 (b).

FIG. 3A shows a case where the threshold voltage is adjusted in an ordinary n ⁺ gate transistor mainly by the electric field due to ionization of impurities introduced into the channel. At this time, since a potential gradient is formed in the SOI layer, a low potential region (a portion where the band is bent upward in the drawing) is generated, and holes are easily accumulated. As a result, the substrate floating effect is likely to occur. On the other hand, FIG.
As shown in (b), when the n ⁺ gate is adopted and the impurity concentration is lowered, the electric field generated by the ionization of the impurities is reduced, so that the potential gradient in the SOI layer becomes small and a region having a low potential is formed. It is less likely to be generated and holes are less likely to be accumulated. However, on the other hand, since the electric field in the gate oxide film (which is reflected in the band slope of the gate oxide film portion in the figure) is smaller than that in FIG. 3A, the potential of the SOI layer increases (in the figure, Corresponding to the lower energy of the arrow). Then, the threshold voltage of the transistor is lowered by the amount of the increased potential in this way. In fact, when the n ⁺ gate is adopted and the channel impurity is not introduced, the threshold voltage based on the source voltage becomes a negative value, which is too low for application to CMOS.

FIG. 4A is the same as FIG. 3A. FIG. 3B shows a structure using a normal metal gate (Ta, TiN, etc.) in the structure of FIG. 3B (structure having a low channel impurity concentration). In this case, the Fermi level of the metal gate corresponds to the energy near the center of the forbidden band of silicon, and the work function of the metal gate is n.
^{It is} larger than silicon by about half the bandgap of silicon. As a result, the potential of the SOI layer becomes lower (corresponding to the higher energy in the arrow in the figure), and the threshold voltage of the transistor rises. In this case, the threshold voltage based on the source voltage is about 0.4 to 0.6 V even when the impurities are not introduced, and becomes higher than that when the impurities are introduced. However, the threshold voltage based on the source voltage is a threshold voltage of the transistor when the source is grounded (a gate voltage value at which a transition between an on state and an off state occurs. Generally, CMOS The threshold voltage of the n-type field effect transistor used in the circuit having the configuration is required to be about 0.1 to 0.4 V with reference to the source voltage, and the threshold value is too high to be practical.
3C shows a structure in which the Fermi level corresponds to an energy intermediate between the center of the forbidden band of silicon and the lower end of the conduction band of silicon in the structure of FIG. 3B (structure in which the channel impurity concentration is low). In this case, the work function of the gate is larger than that of n ⁺ silicon, but the difference is less than ¼ of the band gap of silicon. As a result, SOI
An increase in the potential of the layer is suppressed, and a threshold voltage similar to that in FIG. 4A is obtained. Specifically, the threshold voltage based on the source voltage can be set in the range of 0.1 to 0.4V. Moreover, since the potential gradient in the SOI layer is small, the floating body effect is suppressed. In the case of the p-type field effect transistor, if the polarities are all reversed, the same relationship as in the case of the n-type field effect transistor is established, and the same effect as in the case of the n-type field effect transistor is obtained. For example, for the gate electrode, a metal whose Fermi level corresponds to energy closer to the valence band than the middle between the center of the forbidden band of silicon and the top of the valence band of silicon is used. At this time, the work function of the gate is smaller than that of p ⁺ silicon, but the difference is 1/4 or less of the band gap of silicon.

In the SOI-MOSFET, if the electric field in the vertical direction is reduced in order to suppress the substrate floating effect, when the drain voltage is high, the current flows through the backside interface of the SOI layer, so that the characteristics deteriorate. There is. Such a current path at the backside interface of the SOI layer is called a back channel. The back channel is formed in the n-type field effect transistor when the potential of the backside interface is higher than the potential of the surface of the SOI layer in all lateral positions of the channel formation region, in the p-type field effect transistor. The potential of the backside interface is lower than the potential of the surface of the SOI layer at all lateral positions of the channel formation region. In the n-type field effect transistor, when the back channel is formed when the gate voltage is higher than the threshold voltage, the drain current deteriorates. Therefore, in the n-type field effect transistor, the source voltage is low level (for example, It is possible to set the impurity concentration so that a back channel does not occur when a voltage higher than the threshold voltage is applied to the gate voltage in the state where a high level (eg, power supply voltage VDD) is applied to the ground voltage) and the drain voltage. preferable. For that purpose, the potential of the surface may be higher than the potential of the backside interface of the SOI layer in the cross section at all lateral positions of the channel forming region within the range of this bias condition. Note that in this specification, high level and low level refer to maximum and minimum values of a signal voltage applied to the transistor. SOI-MOS
In the FET, when a back channel (the effect of current flowing through the backside of a semiconductor layer) is formed in a subthreshold region (a region in which a voltage below the threshold voltage is applied to the gate), a change in current in the subthreshold region is detected. The effect of deteriorating the steepness is remarkable, the subthreshold current increases, and the standby current increases. In order to suppress this, in the n-type field effect transistor, the low level (for example, the ground voltage) is applied to the source voltage and the high level (for example, the power supply voltage VDD) is applied to the drain voltage, and the low level ( When a voltage equal to or higher than the ground voltage) is applied, the surface potential of the back channel becomes higher than that of the back side interface of the SOI layer in the cross section at all lateral positions of the channel formation region.
The impurity concentration of the channel formation region may be set.

Further, the gate voltage is low level (for example, ground voltage) while the source voltage is slightly lower than the high level (for example, 0.1 V) and the drain voltage is at high level (for example, power supply voltage VDD). A stricter condition may be imposed such that the impurity concentration is set so that the back channel is not generated when the above voltage is applied.

In the case of a p-type field effect transistor, it is sufficient to use the condition that the polarities are reversed. For example, in a state in which a high level (for example, power supply voltage) is applied to the source voltage and a low level (for example, ground voltage) is applied to the drain voltage, a back channel is prevented from occurring when a voltage below the threshold voltage is applied to the gate voltage. It is preferable to set the impurity concentration. If this is expressed using a threshold voltage with the source voltage as a reference, the source voltage is grounded (0V)
However, in the state in which a negative voltage (−1.0 V if the power supply voltage is 1.0 V) in which the sign of the power supply voltage is reversed is applied to the drain voltage, the gate voltage has a voltage equivalent to the threshold voltage (typically Specifically, the impurity concentration is set so that a back channel is not generated when a voltage of −0.4 to −0.1 V) or less is applied. An example when the power supply voltage VDD is applied to the source is as follows. Power supply voltage VDD to the source
Is applied and the drain is grounded (that is, 0V is applied), and the threshold voltage with respect to the source is Vth (negative value, for example, −0.3V), VDD + Vth (for example, VD
If D is 1.0V and Vth is -0.3V, 0.7
The impurity concentration is set so that a back channel does not occur when V) is applied to the gate electrode. In order to suppress the standby current, in the case of a p-type field effect transistor, the gate voltage is high when the high level (for example, power supply voltage) is applied to the source voltage and the low level (for example, ground voltage) is applied to the drain voltage. It is preferable to set the impurity concentration so that a back channel does not occur when a voltage lower than a level (for example, power supply voltage) is applied. In order to suppress the back channel, within these bias conditions, at all lateral positions of the channel formation region,
The potential of the surface of the SOI layer may be lower than that of the back side interface.

Further, the substrate floating effect in the SOI-MOSFET is remarkable in the partially depleted type transistor in which the entire semiconductor layer is not depleted and the neutral region remains in the semiconductor layer. The impurity concentration may be set so as to be depleted (so as to form a fully depleted transistor). Furthermore, it is preferable to reduce the potential difference in the semiconductor layer even for the same fully depleted transistor. Therefore, taking an n-channel transistor as an example, the source is grounded, a threshold voltage is applied to the gate electrode, and a minute drain voltage (for example, 0.
The minimum potential φmin in the semiconductor layer in the state of being applied with 1 V, more strictly the same potential as the source, is set to be a certain value or more. Here, the minimum potential φmin is a potential at a position where the potential is minimum in the range of the channel formation region sandwiched between the source / drain regions. φmin is, for example, at least −0.6V or more, preferably −0.4V or more. φmin is, for example, in a transistor to which a clock is periodically applied, holes accumulated when a low voltage is applied are
It may be set so that it is discharged when a high voltage is applied. In the n-type field effect transistor, holes are mainly accumulated by a band-to-band tunnel current when a high level signal is applied to both the source / drain regions and a low level signal is applied to the gate. In this case, when the source / drain regions and the gate are all at the same potential (all are at high level or all are at low level), it is necessary to discharge all accumulated holes without causing the substrate floating effect. Good. At this time, if φmin is low, a hole current (current that holes flow to the source / drain regions) necessary for discharging holes does not flow without accumulating holes to some extent, but if φmin is high, Even when the hole concentration is low, a hole current sufficient for discharging holes flows, and as a result, the hole concentration is kept low. The maximum hole concentration is kept at 10 ¹⁸ / cm ³ or less, and the condition that balances generation of holes by band-to-band tunneling and elimination of holes by hole current is generally φmin of −0.4 to −.
Since it is about −0.6 V, φmin may be set larger than this.

Further, when a voltage higher than the band gap of silicon is applied to the drain, φmin is preferably set higher (for example, -0.25 V or higher) because holes due to impact ionization become remarkable. . In this case, the minimum potential in the channel formation region with the power supply voltage applied to the drain may be considered to be φmin.

In the case of a p-type field effect transistor, the polarities may be reversed and the same applies. Maximum potential φm in the semiconductor layer when the threshold voltage is applied to the gate voltage, the power supply voltage is applied to the source, and the minute drain voltage (for example, -0.1 V, more strictly the same potential as the source) is applied to the drain electrode.
The ax is set to a certain value or less (for example, 0.6 V or less, more preferably 0.4 V or less, further preferably 0.25 V or less).

However, the above φmin and φmax are all values with reference to the source potential (values obtained by subtracting the source potential from the potential in the channel region, corresponding to the case where the source voltage is 0V of the reference voltage). ).

Next, a semiconductor device according to a third embodiment of the present invention will be described with reference to the sectional views of FIGS.

An SOI substrate having a single crystal silicon layer 23 with a thickness of 50 nm on a buried oxide film 22 with a thickness of 100 nm is prepared. The single crystal silicon layer 23 is the element isolation oxide film 1
Then, the surface of the single crystal silicon layer 23 is thermally oxidized to a thickness of 3 nm to form a silicon oxide film 101. A region in which a p-type field effect transistor is formed and a region in which an n-type field effect transistor is formed are set on the substrate.
An element region in which the p-type field effect transistor is formed and an element region in which the n-type field effect transistor is formed are formed. Subsequently, the p ⁺ type silicon germanium mixed crystal layer (p ⁺ type SiGe mixed crystal layer) 102 is formed by CVD to 2
00 nm, and the silicon nitride film 103 is 30 nm above it.
Deposit (FIG. 5A).

Next, p⁺Type SiGe mixed crystal layer 102 and
The silicon nitride film 103 on the top of the
And patterning by RIE, p⁺Type SiGe mixed crystal
Dami consisting of the layer 102 and the silicon nitride film 103 thereon
-The gate electrode 104 is formed. Furthermore, single crystal silicon
Part of the region on the layer 23 was covered with the resist film 105.
Then, using the dummy gate electrode 104 as a mask, 1 × boron is used.
10¹⁵atoms / cm ²P-type
P with high concentration of impurities⁺Mold source region 26 and
p⁺The mold drain region 27 is formed (FIG. 5B).

Next, the region where the p ⁺ type source region 26 and the p ⁺ type drain region 27 of the p type field effect transistor are formed is covered with a resist film 106, and arsenic is added at 1 × 10 ¹⁵ at.
Ions are implanted at a concentration of oms / cm ² to form an n ⁺ type source region 36 and an n ⁺ type drain region 37 in which n type impurities are introduced at a high concentration (FIG. 5C).

Next, the resist film 106 is removed, and the entire surface is removed.
After depositing the CVD oxide film 107 having a thickness of 00 nm, the silicon nitride film 10 forming the upper layer of the dummy gate electrode 104 is formed.
Using 3 as a stopper, flattening is performed by CMP. The resist film 108 is newly covered on the upper part of the portion where the p ⁺ -type source region 26 and the p ⁺ -type drain region 27 of the p-type field effect transistor are formed (FIG. 6A), and the n ⁺ -type of the n-type field effect transistor is formed. The silicon nitride film 103 in the region where the source region 36 and the n ⁺ type drain region 37 are formed is removed by RIE, and then the p ⁺ type SiGe mixed crystal layer 102 is RI.
It is removed by E or chemical dry etching to form the slit 109 (FIG. 6B). p ⁺ type SiGe
The mixed crystal layer 102 is removed after removing the resist film 108.
It may be removed by wet etching using a mixed solution of hydrofluoric acid and nitric acid or phosphoric acid. Similarly, after removing the resist film 108, the resist film 108 may be removed by exposing it to hydrochloric acid gas.

After removing the resist film 108, the slit 109 is formed.
The silicon oxide film 101 therein is removed by RIE or wet etching, and then thermally oxidized to a thickness of 3 nm.
The gate insulating film 34 of the n-type field effect transistor is formed, the erbium silicide 110 having a thickness of 20 nm is embedded in the slit 109 by the sputtering method, and then the metal 11 such as aluminum (Al) or tungsten (W) 11 is formed.
1 is embedded by sputtering or CVD (FIG. 7A),
Subsequently, Al or W outside the slit 109 is etched back or removed by CMP, and then RIE is performed.
Erbium silicide 110 outside the slit 109 by
Are removed (FIG. 7B). Erbium silicide 11
The removal of 0 is performed under the condition that the physical etching action is strong, such as RIE having a high RF power as compared with the case of etching the metal 111. Alternatively, it is removed by sputtering using inert gas ions such as Ar ions and Xe ions. In addition,
In the n-type field effect transistor, the insulating film below the dummy gate electrode may be directly used as the gate insulating film without being removed. In addition, p-type impurities are introduced into the non-doped SiGe when the source / drain regions of the p-channel transistor are formed using non-doped SiGe in which impurities are not introduced instead of p ⁺ SiGe.
^A step of forming a ⁺ type gate electrode may be used. In addition, p ⁺
SiGe and non-doped SiGe may be a polycrystalline film deposited by CVD or sputtering, or may be an amorphous film. The mixed crystal ratio of Si and Ge is, for example, 0.
8 to 0.2. The mixed crystal ratio of Si and Ge may be set so that the required work function is satisfied. The work function depends to some extent on the creation conditions, but usually the ratio of Ge is 30%.
It is desirable in the present invention that the amount is less than 1. Figure 7
In (b), the p ⁺ type source region 26, the p ⁺ type drain region 27, the channel forming region which is the single crystal silicon layer 23 sandwiched between these, the gate insulating film 101 (silicon oxide film) on the channel forming region , The p ⁺ type SiGe mixed crystal layer 102 forming the gate electrode on the upper part thereof constitutes a p type field effect transistor, and the n ⁺ type source region 3
6, n ⁺ -type drain region 37, a channel formation region which is a single crystal silicon layer 23 sandwiched therebetween, a gate insulating film 34 on the channel formation region, an erbium silicide 110 which forms a gate electrode on the upper portion thereof, a metal 1
11 constitutes an n-type field effect transistor.

In the n-channel transistor and the p-channel transistor, the single crystal silicon layer below the gate electrode has a concentration that satisfies any of the potential distributions described in the first and second embodiments. Impurities are introduced. For example, in an n-channel transistor, the single crystal silicon layer below the gate electrode has 4 to 8 × 10 ¹⁷ atoms.
ms / cm ³ , typically 5 to 7 × 10 ¹⁷ atoms /
cm ³ of boron is introduced. In the p-channel transistor, 4 to 8 × 10 is formed in the single crystal silicon layer below the gate electrode.
¹⁷ atoms / cm ³ , typically 5 to 7 × 10 ¹⁷ at
Oms / cm ³ phosphorus is introduced. These are introduced by an impurity introduction process such as ion implantation or plasma doping at an appropriate time, such as before the formation of the gate electrode or before the deposition of the dummy layer (p ⁺ type SiGe mixed crystal layer).

In the above description, in the case of the n-type field effect transistor, the dummy gate electrode and the silicon oxide film thereunder are removed, and the gate insulating film and the gate electrode are formed again, and the p-type field effect transistor is formed. 1 shows a manufacturing flow in which the dummy gate electrode and the silicon oxide film thereunder are used as they are as the gate electrode and the gate insulating film, respectively.

Next, a method of removing the dummy gate electrode of the p-type field effect transistor and the silicon oxide film thereunder and re-forming the gate insulating film and gate electrode,
A fourth embodiment of the present invention will be described. In the third embodiment, only the n-type field effect transistor in FIGS. 5 to 7 is removed until the dummy gate electrode and the silicon oxide film thereunder are removed and the gate insulating film and the gate electrode are formed again. Since it is shown, the steps subsequent to the state of FIG. 7B will be described with reference to FIG.

After the shape of FIG. 7B is formed, the n-type field effect transistor is covered with a resist 112 (see FIG. 8).
(A)), in the slit obtained by removing the dummy gate electrode 104 on the p-type field effect transistor side, the gate insulating film 44 is formed again in the same manner as in the step related to the n-type field effect transistor, and the gate electrode material, For example, a step of embedding platinum silicide (PtSi2) 113 may be used (FIG. 8B). When this process is used, the dummy gate electrode 104 having a laminated structure that is initially formed does not need to include a conductive material. For example, the whole may be a nitride film. When the entire dummy gate electrode 104 is a nitride film, for example, after forming the shape of FIG. 7B, a thin oxide film having a thickness of about 10 nm is deposited on the entire surface, and a p-type electric field is formed using a resist film. Only the thin oxide film in the effect transistor portion may be removed by etching, and the nitride film in the p-type field effect transistor portion exposed after removing the resist film may be removed by etching with phosphoric acid or the like.

Further, as shown in FIG. 9, the metal 121 is used for both n-type and p-type transistors, after the gate insulating film 54 and the gate insulating film 64 are embedded in the slits, respectively. You may form. In this case, the erbium silicide 120 formed on the p-type field effect transistor section is removed by using the resist film 122 as a mask as shown in FIG.
Platinum silicide 123, which is a gate electrode material of the p-type field effect transistor, may be deposited, and subsequently, a metal 121 common to the n-type field effect transistor and the p-type field effect transistor may be deposited (FIG. 9B). After that, the gate electrode material may be left in a slit provided above each type of transistor (FIG. 9C). In this case, in the gate electrode of the n-type field effect transistor, the materials having different work functions are erbium silicide 12 in order from the gate insulating film 54 side.
0, a structure in which a metal 121 is embedded on a structure in which platinum silicide 123 is laminated in two layers.

The order of forming the n-type field effect transistor and the p-type field effect transistor may be reversed. Alternatively, the insulating film under the slit obtained by removing the dummy gate electrode 104 may not be removed and may be used as the gate insulating film.

FIG. 10 shows the structure obtained when the present invention is applied to the MOSFET on the bulk substrate. Figure 1
0 shows a structure obtained by applying the manufacturing method according to the fourth embodiment of the present invention using an SOI substrate to a semiconductor substrate. In the figure, 201 is a p-type silicon substrate, 20
0 is an element isolation oxide film, 202 is a p-type channel stopper, 231 is an n well, 206 is a p ⁺ type source region, 2
Reference numeral 07 is a p ⁺ type drain region, 216 is an n ⁺ type source region, 217 is an n ⁺ type drain region, 214 and 224 are gate insulating films, 211 is a silicon oxide film, and 217 is CVD.
An oxide film, 220 is an erbium silicide, 223 is a platinum silicide, and 221 is a metal.

The description of the source region and the drain region in the present invention includes the case where they are interchanged depending on the bias conditions. When the bias condition is specified, of the source / drain regions on both sides of the gate electrode, the region to which the lower voltage is applied in the n-type field effect transistor is the source region and the region in which the lower voltage is higher is the p-type field effect transistor. The applied region is the source region, and the other region is the drain region. In addition, in a circuit having a CMOS structure, a source / drain region of a source / drain region of a p-type field effect transistor, a side connected to a power source, a source / drain region of an n-type field effect transistor that is grounded, or the like. When the role is fixed, it can be considered to be fixed to the source region or the drain region based on the layout, regardless of the actual bias condition. The side of the source / drain region of the p-type field effect transistor that is connected to the power supply and the side of the source / drain region of the n-type field effect transistor that is grounded are both source regions. However, for an element such as a transfer gate in which the source region and the drain region are switched depending on the bias condition, one of the source / drain regions may be either the source region or the drain region under the condition that the bias condition is not specified or during the manufacturing process. Since it can not be specified as a region, the description for the state where the bias condition is not specified, or the description of the source region and the drain region during the manufacturing process,
The term "source / drain region" whose role is not fixed is read. The term “SOI layer” used in the present invention refers to a semiconductor layer provided on an insulator, and the term “SOI substrate” includes a structure in which a semiconductor layer is provided on an insulator. Means a substrate

Further, a part of the semiconductor layer may be silicon and the other part may be a semiconductor other than silicon. For example,
In the semiconductor layer, part of the silicon layer is Ge or SiGe
May be replaced by.

In the third and fourth embodiments of the present invention, the semiconductor layers in the element region are insulated by the insulating layer. However, the element isolation or the isolation between transistors of different conductivity types may be used. It is not limited to this form. A method of forming a plurality of transistors in a single semiconductor layer such as a field shield method may be used. Further, the p-type transistor and the n-type transistor may be provided in the same semiconductor layer that is not isolated. In addition, the sources / sources of the n-channel transistor and the p-channel transistor, to which the same potential is applied,
The drain regions may be in contact with each other, specifically, the drain regions in a CMOS circuit may be in contact with each other.

In the present invention, when the impurity having the first conductivity is an n-type impurity such as phosphorus or arsenic, the impurity having the second conductivity is a p-type impurity such as boron or indium. Is. Also, the first
When the conductivity type impurity is a p-type impurity such as boron or indium, the second conductivity type impurity is a p-type impurity such as phosphorus or arsenic. Further, in order to introduce boron, a method of implanting ions composed of an element to be introduced and an element other than that, such as a method using BF2 ions, may be used.

The field effect transistor is, for example,
SOI substrate formed by SIMOX, bonding, etc.
Alternatively, it may be formed on an SOI substrate formed by another method such as ELO (lateral epitaxial growth) or laser annealing.

The semiconductor layer (SOI layer) formed on the insulating layer in these SOI substrates is a single crystal. These S
A part or all of a semiconductor layer included in a field-effect transistor formed using an OI substrate is a single crystal.

Here, SIMOX is Separat
ion-by-implanted-oxygen, which is a technique for forming an oxide film layer under a thin silicon layer by ion-implanting oxygen into a silicon substrate, or an SOI substrate formed by such a technique. .

The bonding technique is an SOI substrate forming technique in which two silicon substrates are bonded to each other so that an oxide film is sandwiched between them. On the other hand, ELO
Is the Epitaxal Lateral Over
It is an abbreviation for Growth and is a technique for epitaxially growing a semiconductor layer laterally on an insulator.

In the above embodiment, the semiconductor layer in which the element is formed is the SOI layer 3 made of a single crystal Si layer, but the semiconductor layer is not limited to the single crystal. In a TFT formed of a polycrystalline semiconductor on an insulator or an amorphous semiconductor, surplus carriers are likely to be lost by recombination, so that the substrate floating is generally higher than that of a field effect transistor formed on a single crystal SOI substrate. Although the effect is less likely to occur, the present invention is preferably used when it is necessary to suppress the substrate floating effect in the TFT as well.

Further, a part of the semiconductor layer may be a single crystal and the other part may be a polycrystal. For example, if the channel formation region is a single crystal instead of a polycrystal, carrier mobility is increased and drain current is increased.
A structure in which only the channel formation region is a single crystal semiconductor and a polycrystalline region is included in the semiconductor layer in the other portion may be used. In addition, if the vicinity of the channel formation region is made of a single crystal instead of a polycrystal, the effect of reducing leakage current through crystal defects can be obtained. A semiconductor may have a structure in which a polycrystalline region is present in the semiconductor layer in another portion.

The thickness of the buried oxide film layer is typically 80 nm to 400 nm in the SIMOX substrate and about 100 nm to 2 μm in the laminated substrate.
Since the effect of the present invention is not related to the thickness of the buried oxide film layer, a buried oxide film having a film thickness larger or smaller than these may be used so as to satisfy the electrostatic breakdown voltage and thermal conductivity specifications. However, in general, in order to reduce the parasitic capacitance between the support substrate and the SOI layer, it is advantageous to make the buried oxide film thickness larger than at least about 5 times the gate oxide film thickness.

Further, instead of the buried oxide film, another insulator may be used. For example, a silicon nitride film (Si3N
4), alumina, porous silicon oxide film, amorphous carbon, etc. may be used. Also, the buried oxide film may be replaced with a cavity. The transistor may be formed over an insulator over a sapphire substrate or a glass substrate without providing a supporting substrate.

The thickness of the semiconductor layer 3 in the element region shown in FIG. 1 is typically about 50 nm to 250 nm, but this is not particularly limited. However, from the viewpoint of reducing the parasitic capacitance of the source region 6 (16) and the drain region 7 (17), the impurities introduced into the source region 6 and the drain region 7 reach the bottom of the semiconductor layer 3, or the source region 6 It is desirable to set the thickness of the semiconductor layer 3 to a thickness such that (16) and the lower portion of the drain region 7 (17) are depleted.

In the channel forming region 8 (18), an acceptor impurity such as boron is introduced in the case of an n-type field effect transistor, and a donor impurity such as phosphorus or arsenic is introduced in the case of a p-type field effect transistor. It

Source region 6 (16) and drain region 7
The impurity concentration of (17) is typically 1 × 10 ¹⁹ ato
It is in the range of ms / cm ³ to 1 × 10 ²¹ atoms / cm ³ , and is preferably larger than 1 × 10 ²⁰ atoms / cm ³ from the viewpoint of reducing parasitic resistance. Source area 6
Donor impurities such as phosphorus and arsenic are introduced into (16) and the drain region 7 (17) in the case of an n-type field effect transistor, and acceptor impurities such as boron are introduced into a p-type field effect transistor.

The thickness of the gate insulating film 4 (14) is usually 2n.
It is about m to 20 nm. If it is thinner than this, the leakage current from the gate electrode is generated due to the tunnel current,
An insulating film thinner than this may be used if the leakage current may be large due to the use of the device.

The reason why the film thickness is set to 20 nm or less is to obtain a drain current that is generally required as an element for LSI. However, in a high breakdown voltage element, etc. When the electric field relaxation is important, it may be thicker than this, and the gate insulating film 4 (1
4) is an insulator other than a silicon oxide film,
For example, silicon nitride film, tantalum pentoxide (Ta2O5)
And so on. Also, a plurality of materials may be laminated.

The gate length (the length of the gate electrode in the method of connecting the source and drain regions) is, for example, in the range of about 30 nm to 0.6 μm. These are the dimensions that are normally used and the dimensions that are said to be used in the future, assuming a transistor for LSI.
When it is applied to other uses such as an OS, it may be larger than this. Further, when miniaturization of the device is important, it may be smaller than this. Further, the source / drain regions do not have a uniform depth, but may have an extension structure provided shallowly only in a portion in contact with the channel formation region, or an LDD structure in which the impurity concentration in the portion in contact with the channel formation region is lowered. In addition, even if at least a part of the source / drain region or at least a part of the region such as the extension region connected to the source / drain region has a structure protruding above the surface of the channel formation region by epitaxial growth or the like. good.

In each of the above specific examples of the present invention,
As the material of the gate insulating film and the buried insulating film, it is possible to use materials other than the above-mentioned silicon oxide film.

In the inventions of the third and fourth embodiments relating to the manufacturing method, neither the field effect transistor described in the first embodiment nor the semiconductor element described in the second embodiment is formed, and the same substrate is simply used. It may be used to form two types of field effect transistors each having two types of gate electrodes made of different materials. Also,
The order of the process relating to the n-channel transistor and the process relating to the corresponding p-channel transistor may be exchanged.

The invention relating to the manufacturing method may be applied to a MOSFET on a normal bulk substrate other than the SOI substrate. Further, it may be applied to a structure in which a support substrate is not provided below an insulator below a semiconductor layer, such as a TFT on a glass substrate or a FET having an SOS structure.

In the invention relating to the manufacturing method, among the transistors of the same channel type on the same substrate, the material of the part of the gate electrode of some transistors which is in contact with the gate insulating film is replaced by the remaining part of the transistors. It may be used when another material is used for the portion of the gate electrode which is in contact with the gate insulating film.

In the manufacturing method described in the third embodiment, the material forming the gate electrode of the n-channel transistor may form the mask material layer and the dummy gate electrode for manufacturing the p-channel transistor. . However, from the viewpoint of manufacturing the semiconductor device of the second embodiment, it is possible to use, as the dummy gate electrode, polycrystalline Si or polycrystalline SiGe, which is the same or similar material as the normal gate. In terms of the point, the method of forming the mask material layer and the dummy gate electrode for manufacturing the n-channel transistor is excellent depending on the material forming the gate electrode of the p-channel transistor.

In the manufacturing method described in the fourth embodiment, the order of the step of forming the gate electrode of the n-channel transistor and the step of forming the gate electrode of the p-channel transistor may be reversed. good. Also,
In the manufacturing method described in the third and fourth embodiments,
The order of the step of forming the source / drain regions of the n-channel transistor and the step of forming the source / drain regions of the p-channel transistor may be opposite to the above description. Further, in the fourth embodiment, the dummy gate electrode (104) for forming the gate electrode is not used as it is as a gate electrode, so an insulating film such as a Si3N4 film may be used as a dummy gate electrode. In addition, in the fourth embodiment, the insulating film (1) forming the lower layer of the dummy gate electrode (104) for forming the gate electrode is formed.
Since (01) is not used as it is as a gate insulating film, it may be omitted particularly when an insulating film is used as a material (mask material layer) constituting the upper layer portion.

[0088]

As described above, according to the present invention,
It is possible to achieve both the suppression of the substrate floating effect and the back channel and the realization of a preferable threshold voltage in the CMOS logic circuit.

In the n-type SOI-MOSFET, SO
When the concentration of p-type impurities in the I layer is high, the depletion layer does not spread over the entire channel formation region. That is, a neutral region, which is a region other than the depletion layer, is formed. S with a neutral region
The OI-MOSFET is called a partially depleted type, and it is known that a substrate floating effect easily occurs in this type of transistor, which is not preferable in terms of device operation.

On the other hand, if the concentration of the p-type impurity in the SOI layer is too low, the potential of the backside interface of the SOI layer becomes higher than the potential of the surface of the SOI layer. In this case, a phenomenon occurs in which a leakage current flows on the back side of the SOI layer (back channel), and the transistor does not turn off sharply below the threshold voltage, which is not preferable.

If an attempt is made to set the impurity concentration so as to have an intermediate impurity concentration between the above two, in a fine SOI-MOSFET having a thin oxide film, the electric field strength in the SOI layer becomes too small, and As a result, a new problem occurs that the threshold voltage becomes too low. If a normal metal gate is used to increase the threshold voltage, the threshold voltage becomes too high.

This is because materials such as Ta, TiN, and W that are usually used for the metal gate have a work function in the center of the forbidden band of Si.

On the other hand, when a material having a work function satisfying the conditions of the present invention is used for the gate electrode, the threshold voltage (which has an intermediate impurity concentration between the above two and is suitable for a CMOS logic circuit) In the n-type field effect transistor, the threshold voltage based on the source voltage is 0 V or more and 0.4 V or more.
Below, preferably 0.1 V to 0.3 V) can be realized.

In the case of the p-type field effect transistor, in the action of the n-type field effect transistor, the action of reversing the polarity works, and by using the configuration of the above invention, both the substrate floating effect and the back channel are suppressed. And it is possible to realize a preferable threshold voltage (threshold voltage based on the source is −0.4 V or more and 0 V or less, preferably −0.3 V to −0.1 V) suitable for a CMOS logic circuit. .

In the case of a p-type field effect transistor, the threshold voltage is lowered by the interface charge or fixed charge. This effect is brought about by the charges in the gate oxide film, the charges in the buried oxide film, and the charges at the upper and lower interfaces of the SOI layer. Of these, charges in the buried oxide film, S
The electric charge at the lower interface of the OI layer is not in a normal FET,
Since it is peculiar to the I-MOSFET, the p-channel SOI-
The threshold voltage of the MOSFET tends to be low (the absolute value of the threshold voltage based on the source voltage tends to be large). Therefore, even if the work function of the material forming the portion of the gate electrode in contact with the gate insulating film is similar to that of p ⁺ silicon forming the source / drain regions, the threshold voltage based on the source voltage is Since it can be a negative value, p ⁺ polysilicon may be used in this portion as the gate electrode.

According to the manufacturing method of the present invention, the gate electrode is formed of the first material, the source / drain regions are formed, and then, in some transistors, the gate electrode made of the first material is removed. The feature is that the second material is embedded in the void obtained by removing the gate electrode made of the above material. Therefore, mix the transistors with the first and second gate electrode materials on the same substrate. To be
Further, by using this feature, it is possible to provide a manufacturing method for forming the gate electrode of the n-type field effect transistor and the gate electrode of the p-type field effect transistor with different materials. In addition, polycrystalline silicon, polycrystalline SiGe
By using a material having excellent heat resistance as the first material, it is possible to suppress the heat treatment step such as formation of the source / drain regions from affecting the first material. Further, according to the present invention, after embedding a dummy pattern in an insulating film, part of the dummy pattern is removed, the first gate electrode material is embedded in the obtained void, and another part of the dummy pattern is removed. By embedding the second gate electrode material in the obtained void, the transistors having the first and second gate electrode materials can be mixed on the same substrate. Since the present invention provides a manufacturing method necessary for using different materials for the gate electrodes for n-channel and p-channel transistors, the above work function relationship is satisfied and the characteristics of the SOI-MOSFET are improved. Is effective for. In addition, the manufacturing method of the present invention is the SOI-M
Not limited to the OSFET, it may be used in the case of forming a transistor having different gate electrode materials on the same substrate in a MOSFET on a bulk substrate. This is because, for example, when the material of the gate electrode is changed between the n-type field effect transistor and the p-type field effect transistor on the same substrate, or in the same channel type transistor on the same substrate, the material of the gate electrode is changed by the transistor. It may be used when changing. In addition, MOSFE on the bulk substrate
The purpose of changing the gate electrode according to the channel type at T is to optimize the threshold voltage of each transistor. For example, for an n-type field effect transistor, a material having a work function corresponding to the conduction band closer to the center of the forbidden band of silicon, and for a p-type field effect transistor, closer to the valence band than the center of the forbidden band of silicon. A material having a work function equivalent to is used. In addition, SOI-M
In a transistor of the same channel type on the same substrate regardless of whether it is an OSFET or a MOSFET on a bulk substrate, it may be used when the material of the gate electrode is changed according to the function of the transistor. In the same channel type transistor, the purpose of changing the material of the gate electrode according to the function is to mix transistors having different threshold voltages. For example, in a DRAM, a material having a large work function is used for a gate electrode of an n-channel cell transistor that requires a high threshold voltage, and an n-type field effect transistor of a peripheral circuit portion that requires a low threshold voltage is used. This is a case where a material having a small work function is used for the gate electrode.

[Brief description of drawings]

FIG. 1 is a sectional view of a field effect transistor obtained according to first and second embodiments of the present invention.

FIG. 2 is a potential distribution in a depth direction in a channel formation region during operation of the field effect transistor obtained according to the first and second embodiments of the present invention.

FIG. 3 is a band diagram illustrating an effect of the field effect transistor obtained according to the first and second embodiments of the present invention.

FIG. 4 is a band diagram for explaining the effect of the field effect transistor obtained according to the first and second embodiments of the present invention together with FIG.

FIG. 5 is a cross-sectional view showing, in the order of steps, a method for manufacturing a semiconductor device equipped with a field effect transistor obtained according to a third embodiment of the present invention.

6A to 6C are cross-sectional views showing the method of manufacturing the semiconductor device in order of steps, following FIG.

FIG. 7 is a cross-sectional view showing the method of manufacturing the semiconductor device following the process in FIG. 6 in order of steps.

FIG. 8 is a cross-sectional view showing a method of manufacturing a semiconductor device equipped with a field effect transistor obtained by the fourth embodiment of the present invention in the order of steps.

FIG. 9 is a cross-sectional view showing, in the order of steps, a method for manufacturing a semiconductor device equipped with a field effect transistor in which the configuration of the gate electrode of the field effect transistor obtained according to the fourth embodiment of the present invention is changed.

FIG. 10 is a cross-sectional view showing, in the order of steps, a method for manufacturing a semiconductor device when a field effect transistor having a gate electrode structure according to a fourth embodiment of the present invention is mounted on a silicon semiconductor substrate.

FIG. 11 is a cross-sectional view schematically showing a substrate floating effect of a field effect transistor using an SOI substrate.

[Explanation of symbols]

1, 21, 311 Support substrate 2 Buried insulating film 3 Semiconductor layers 4, 14, 54, 64, 214, 224 Gate insulating film 5, 15, 305, 315 Gate electrode 6, 36, 216, 306, 316 n ⁺ type Source regions 7, 37, 217, 307, 317 n ⁺ type drain regions 8, 18, 28, 38, 308, 318 Channel forming regions 16, 26, 206 p ⁺ type source regions 17, 27, 207 p ⁺ type drain regions 22, 312 Buried oxide film 23 Single crystal silicon layers 100, 200 Element isolation oxide films 101, 211 Silicon oxide film 102 p ⁺ type SiGe mixed crystal layer 103 Silicon nitride film 104 Dummy gate electrodes 105, 106, 108, 112, 122 Resist film 107, 217 CVD oxide film 109 Slits 110, 120, 220 Erbium silicide 111, 11 4, 121, 221 Metal 113, 123, 223 Platinum silicide 201, 301 p-type silicon substrate 202 p-type channel stopper 231 n-well 304, 314 Gate oxide film 313 Silicon semiconductor layer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 29/423 H01L 29/78 613A 29/49 626B 27/08 321D 29/58 G F term (reference) 4M104 AA01 AA09 BB01 BB19 BB22 BB36 CC05 DD03 DD26 DD37 DD43 DD64. EE05 EE08 EE09 EE11 EE14 EE44 EE45 FF01 FF02 FF03 FF23 GG01 GG02 GG03 GG12 GG13 GG15 GG25 GG28 GG32.

Claims (33)

[Claims] 1. A substrate having a semiconductor region on at least a surface thereof, wherein a formation region of a first conductivity type transistor and a formation region of a second conductivity type transistor are set in the semiconductor region, and a first insulation film is formed on the semiconductor region. After forming the film,
By depositing a mask material layer of which at least a lower layer is made of a second conductive material and patterning the mask material layer, a dummy gate electrode is formed in the formation region of the first conductivity type transistor, and a mask layer of the second conductivity type transistor is formed. In the formation region of the first conductivity type transistor, the second gate electrode is provided in each formation region, and the first insulating film under the second gate electrode is made a second gate insulation film. Using the dummy gate electrode as a mask,
Source / drain regions of the first conductivity type are provided on both sides of the dummy gate electrode, and in the formation region of the second conductivity type transistor, the second gate electrode is used as a mask,
A second conductivity type source / drain region is provided on both sides of the second gate electrode, and at least the first conductivity type source / drain region, the second conductivity type source / drain region, and the second gate electrode. And depositing a second insulating film on the first insulating film so as to cover the dummy gate electrode, and at least partially removing the second insulating film above the dummy gate electrode to form the dummy gate electrode. A slit is provided by exposing and selectively removing the dummy gate electrode, and a first conductive material is buried in the slit over the semiconductor region through a first gate insulating film to form a first conductive material. A method for manufacturing a semiconductor device, comprising forming the gate electrode of the above. 2. When the first conductivity type is n-type and the second conductivity type is p-type, the first of the n-type transistors is formed.
Of the gate electrode of the first conductive material forming the portion in contact with the first gate insulating film has a work function larger than the absolute value of the energy difference between the vacuum level and the bottom of the silicon conduction band. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the absolute value of the value obtained by subtracting the energy corresponding to the middle between the bottom of the conduction band of silicon and the center of the forbidden band of silicon is smaller than the vacuum level. 3. The first conductivity type of the n-type transistor when the first conductivity type is n-type and the second conductivity type is p-type.
3. The method of manufacturing a semiconductor device according to claim 1, wherein the first conductive material forming a portion of the gate electrode of the second contacting the first gate insulating film is erbium silicide. 4. When the first conductivity type is n type and the second conductivity type is p type, the second material forming at least a portion of the mask material layer in contact with the first insulating film.
The work function of the conductive material is smaller than the absolute value of the energy difference between the vacuum level and the top of the silicon valence band, and is equivalent to the middle of the top of the valence band of silicon and the center of the forbidden band of silicon from the vacuum level. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the method is larger than the absolute value of the value obtained by subtracting the energy. 5. The semiconductor according to claim 1, wherein the second conductive material forming at least a portion in contact with the first insulating film in the mask material layer is a polycrystalline silicon germanium mixed crystal. Device manufacturing method. 6. The method of manufacturing a semiconductor device according to claim 1, wherein the mask material layer is a laminated film of a p + type silicon germanium mixed crystal and a silicon nitride film in order from the bottom. 7. A substrate having a semiconductor region on at least the surface thereof, wherein a formation region of a first conductivity type transistor and a formation region of a second conductivity type transistor are set in the semiconductor region, and a third insulation film is formed on the semiconductor region. After forming a film, a mask material layer is deposited, and the mask material layer is patterned to form a first dummy gate electrode in the formation region of the first conductivity type transistor and a formation region of the second conductivity type transistor in the formation region of the second conductivity type transistor. Second dummy gate electrodes are provided respectively, and in the formation region of the first conductivity type transistor, the first dummy gate electrode is used as a mask to form a source of the first conductivity type on both sides of the first dummy gate electrode. / Drain region is provided, and in the second conductivity type transistor formation region, the second dummy gate electrode is used as a mask to A source / drain region of the second conductivity type is provided on both sides of the second dummy gate electrode, or in the formation region of the transistor of the second conductivity type,
Using the second dummy gate electrode as a mask, the second dummy gate electrode
Second conductive type source / drain regions are provided on both sides of the dummy gate electrode, and in the first conductive type transistor formation region, the first dummy gate electrode is used as a mask to form the first dummy gate electrode By providing a source / drain region of the first conductivity type on both sides, at least the source / drain region of the first conductivity type, the source / drain region of the second conductivity type, the first dummy gate electrode, and the first dummy gate electrode. A second insulating film is deposited so as to cover the second dummy gate electrode, and the fourth insulating film is partially removed so that at least an upper portion of the first dummy gate electrode is exposed;
The exposed first dummy gate electrode is removed to provide a first slit, and a third conductive material is embedded in the first slit on the semiconductor region through a third gate insulating film. To form a third gate electrode, remove the second dummy gate electrode and provide a second slit, and in the second slit, a fourth gate insulating film is provided on the semiconductor region. A method of manufacturing a semiconductor device, which comprises burying a fourth conductive material to form a fourth gate electrode. 8. A portion of the third gate electrode of the n-type transistor, which is in contact with the third gate insulating film, when the first conductivity type is n-type and the second conductivity type is p-type. The work function of the third conductive material forming
It is larger than the absolute value of the energy difference between the vacuum level and the bottom of the silicon conduction band, and is more than the absolute value of the vacuum level minus the energy corresponding to the middle between the bottom of the conduction band of silicon and the center of the forbidden band of silicon. When it is small and the first conductivity type is p-type and the second conductivity type is n-type, it constitutes a part of the fourth gate electrode of the n-type transistor which is in contact with the fourth gate insulating film. The fourth conductive material is
The work function is larger than the absolute value of the energy difference between the vacuum level and the bottom of the silicon conduction band, and the vacuum level minus the energy corresponding to the middle between the bottom of the conduction band of silicon and the center of the forbidden band of silicon. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the absolute value is smaller than the absolute value of. 9. A portion of the third gate electrode of the n-type transistor which is in contact with the third gate insulating film when the first conductivity type is n-type and the second conductivity type is p-type. When the first conductivity type is p-type and the second conductivity type is n-type, the third conductive material forming the third conductive material is the fourth gate electrode of the fourth gate electrode of the n-type transistor. 9. The method of manufacturing a semiconductor device according to claim 7, wherein the fourth conductive material forming the portion in contact with the gate insulating film is erbium silicide. 10. A portion of the fourth gate electrode of a p-type transistor which is in contact with the fourth gate insulating film when the first conductivity type is n-type and the second conductivity type is p-type. The work function of the fourth conductive material is smaller than the absolute value of the energy difference between the vacuum level and the upper end of the silicon valence band. When the first conductivity type is p-type and the second conductivity type is n-type and is larger than the absolute value of a value obtained by subtracting energy corresponding to the middle of the forbidden band, the third of the p-type transistors is formed. Of the third conductive material forming a portion of the gate electrode in contact with the third gate insulating film, the work function of the third conductive material is more than the absolute value of the energy difference between the vacuum level and the upper end of the silicon valence band. Small, vacuum level, silicon valence electrons 10. The method of manufacturing a semiconductor device according to claim 7, wherein the absolute value of the value obtained by subtracting the energy corresponding to the middle between the upper end of the band and the center of the forbidden band of silicon is larger. 11. A portion of the fourth gate electrode of a p-type transistor which is in contact with the fourth gate insulating film when the first conductivity type is n-type and the second conductivity type is p-type. When the first conductive type is p-type and the second conductive type is n-type, the fourth conductive material forming the third conductive layer includes the third gate electrode of the third gate electrode of the p-type transistor. 11. The semiconductor according to claim 7, wherein the third conductive material forming the portion in contact with the gate insulating film is p + type polysilicon, p + type polycrystalline silicon germanium mixed crystal, or platinum silicide. Device manufacturing method. 12. When the first conductivity type is n type and the second conductivity type is p type, the configuration of the third gate electrode is at least erbium silicide in contact with the third gate insulating film. And a p + -type polysilicon or a p + -type polycrystalline silicon germanium mixed crystal or platinum silicide covering the same, and at least a portion of the fourth gate electrode that is in contact with the fourth gate insulating film. 12. The method of manufacturing a semiconductor device according to claim 7, wherein the fourth conductive material forming the same is the same as the material covering the erbium silicide in the third gate electrode. 13. The method of manufacturing a semiconductor device according to claim 7, wherein the mask material layer is a silicon nitride film. 14. The method of manufacturing a semiconductor device according to claim 1, wherein the substrate is composed of a support substrate, an insulator on the support substrate, and a semiconductor region serving as an element formation region that covers the insulator. 15. The method of manufacturing a semiconductor device according to claim 1, wherein the entire substrate is a semiconductor. 16. A mask material having a substrate having a semiconductor region on at least a surface thereof, and after forming a first insulating film on the semiconductor region, at least a lower layer is made of a conductive material and an upper layer is made of a silicon nitride film. A dummy gate electrode is provided by depositing a layer and patterning the mask material layer, and using the dummy gate electrode as a mask, source / drain regions of the first conductivity type are provided on both sides of the dummy gate electrode; A second insulating film is deposited on the first insulating film so as to cover the source / drain regions of the first conductivity type and the dummy gate electrode, and the silicon nitride provided in the upper layer portion of the mask material layer. By performing a CMP process using the film as a stopper, the second insulating film on the silicon nitride film is removed and the dummy gate electrode is selected. A slit is provided by selective removal, and a first gate electrode is formed by embedding a first conductive material in the slit on the semiconductor region via a first gate insulating film. A method for manufacturing a characteristic semiconductor device. 17. In a substrate having a semiconductor region on at least its surface, after forming a first insulating film on the semiconductor region, at least the lower layer is made of polycrystalline silicon or polycrystalline S.
A mask material layer made of iGe and having a layer made of a silicon nitride film is deposited on the upper layer, and a dummy gate electrode is provided by patterning the mask material layer. The dummy gate electrode is used as a mask, and both sides of the dummy gate electrode A source / drain region of the first conductivity type is formed on the first insulating film, and a second insulating film is deposited on the first insulating film so as to cover at least the source / drain region of the first conductivity type and the dummy gate electrode. By performing a CMP process using the silicon nitride film provided in the upper layer portion of the mask material layer as a stopper, the second layer on the silicon nitride film is formed.
The insulating film is removed, and the dummy gate electrode is selectively removed to provide a slit, and in the slit, a first conductive material is embedded on the semiconductor region through the first gate insulating film. Thus, the method for manufacturing a semiconductor device is characterized in that the first gate electrode is formed. 18. A slit is provided by selectively removing the dummy gate electrode, and then the first gate insulating film is formed in the slit after removing the first insulating film. 17. The method according to claim 16, wherein
To 17 semiconductor device manufacturing methods 19. A slit is provided by selectively removing the dummy gate electrode, and then the first insulating film is used as a first gate insulating film in the slit. 16. A method of manufacturing a semiconductor device according to items 16 to 17 20. The CMP process is performed by using the silicon nitride film provided in an upper layer portion of the mask material layer as a stopper, thereby performing the second CMP process on the silicon nitride film.
After removing the insulating film of the above, only the silicon nitride film is removed using a resist as a mask, and the slit is provided by removing the remaining region of the dummy gate electrode after removing the resist. Item 16. A method for manufacturing a semiconductor device 21. The CMP process, wherein the mask material layer is formed to have a layer made of a silicon nitride film as an upper layer, and the silicon nitride film provided in an upper layer portion of the mask material layer is used as a stopper. Is performed to remove the second insulating film on the silicon nitride film to expose the dummy gate electrode.
A method of manufacturing a semiconductor device according to claim 1. 22. A slit is provided by selectively removing the dummy gate electrode, and then the first gate insulating film is formed in the slit after removing the first insulating film. 22.
Manufacturing method of semiconductor device 23. The CMP process is performed using the silicon nitride film provided in an upper layer portion of the mask material layer as a stopper, thereby performing the second CMP process on the silicon nitride film.
After removing the insulating film of the above, only the silicon nitride film is removed using a resist as a mask, and the slit is provided by removing the remaining region of the dummy gate electrode after removing the resist. Item 21. Method for manufacturing a semiconductor device 24. When the first conductivity type is n-type and the second conductivity type is p-type, the first gate electrode of the n-type transistor is in contact with the first gate insulating film. 24. The method of manufacturing a semiconductor device according to claim 21, wherein the first conductive material forming the part is erbium silicide. 25. The second conductive material forming a portion of the mask material layer in contact with the first insulating film is a p + type silicon germanium mixed crystal layer.
25. A method for manufacturing a semiconductor device according to any one of 1 to 24. 26. The mask material layer is formed to have a layer made of a silicon nitride film as an upper layer, and the CMP process is performed by using the silicon nitride film provided in an upper layer portion of the mask material layer as a stopper. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the fourth insulating film is partially removed by performing the above step so that at least an upper portion of the first dummy gate electrode is exposed. 27. After the first or second slit is provided by selectively removing the first or second dummy gate electrode, a third slit is formed in the first or second slit. 27. The method of manufacturing a semiconductor device according to claim 26, wherein after removing the fourth insulating film, the third or fourth gate insulating film is formed again. 28. After the first or second slit is provided by selectively removing the first or second dummy gate electrode, the third or third slit in the first or second slit is formed. 27. A method of manufacturing a semiconductor device according to claim 26, wherein the fourth insulating film is used as a third or fourth gate insulating film, respectively. 29. The CMP process is performed by using the silicon nitride film provided in an upper layer portion of the mask material layer as a stopper, thereby performing the second CMP process on the silicon nitride film.
After removing the insulating film of the above, only the silicon nitride film is removed using a resist as a mask, and the slit is provided by removing the remaining region of the dummy gate electrode after removing the resist. Item 26. A method of manufacturing a semiconductor device 30. In a region where an n-type field effect transistor is formed, the conductive material embedded in the slit on the gate insulating film is erbium silicide.
30. A method for manufacturing a semiconductor device according to any one of 29 to 29. 31. The method of manufacturing a semiconductor device according to claim 26, wherein the second conductive material forming a portion of the mask material layer in contact with the first insulating film is platinum silicide. 32. In a substrate having a semiconductor region on at least the surface thereof, a formation region of a first conductivity type transistor and a formation region of a second conductivity type transistor are set in the semiconductor region, and a third insulation film is formed on the semiconductor region. After forming a film, a mask material layer is deposited, and the mask material layer is patterned to form a first dummy gate electrode in a formation region of the first conductivity type transistor and a first dummy gate electrode in a formation region of the second conductivity type transistor. Second dummy gate electrodes are provided respectively, and in the formation region of the first conductivity type transistor, the first dummy gate electrode is used as a mask to form a source of the first conductivity type on both sides of the first dummy gate electrode. / Drain region is provided, and in the second conductivity type transistor formation region, the second dummy gate electrode is used as a mask, A second conductivity type source / drain region is provided on both sides of the second dummy gate electrode, or in the formation region of the second conductivity type transistor,
Using the second dummy gate electrode as a mask, the second dummy gate electrode
Second conductive type source / drain regions are provided on both sides of the dummy gate electrode, and in the first conductive type transistor formation region, the first dummy gate electrode is used as a mask to form the first dummy gate electrode By providing a source / drain region of the first conductivity type on both sides, at least the source / drain region of the first conductivity type, the source / drain region of the second conductivity type, the first dummy gate electrode, and the first dummy gate electrode. A second insulating film is deposited so as to cover the second dummy gate electrode, and the fourth insulating film is partially removed so that at least an upper portion of the first dummy gate electrode is exposed;
The exposed first dummy gate electrode is removed to provide a first slit, and in the first slit, a third conductive material is embedded on the semiconductor region via a third gate insulating film, A third area around the second dummy gate electrode
Second conductive film is removed, and then the second dummy gate electrode is removed to provide a second slit, and the second slit is provided on the fourth gate insulating film in the second slit and in the first slit. Embedding a fourth conductive material on the third conductive material, and forming a third gate electrode in the first slit and a fourth gate electrode in the second slit. A method for manufacturing a semiconductor device, comprising: 33. In a substrate having a semiconductor region on at least a surface thereof, a formation region of a first conductivity type transistor and a formation region of a second conductivity type transistor are set in the semiconductor region, and a third insulation film is formed on the semiconductor region. After forming a film, a mask material layer is deposited, and the mask material layer is patterned to form a first dummy gate electrode in the formation region of the first conductivity type transistor and a formation region of the second conductivity type transistor in the formation region of the second conductivity type transistor. Second dummy gate electrodes are provided respectively, and in the formation region of the first conductivity type transistor, the first dummy gate electrode is used as a mask to form a source of the first conductivity type on both sides of the first dummy gate electrode. / Drain region is provided, and in the second conductivity type transistor formation region, the second dummy gate electrode is used as a mask, A second conductivity type source / drain region is provided on both sides of the second dummy gate electrode, or in the formation region of the second conductivity type transistor,
Using the second dummy gate electrode as a mask, the second dummy gate electrode
Second conductive type source / drain regions are provided on both sides of the dummy gate electrode, and in the first conductive type transistor formation region, the first dummy gate electrode is used as a mask to form the first dummy gate electrode By providing a source / drain region of the first conductivity type on both sides, at least the source / drain region of the first conductivity type, the source / drain region of the second conductivity type, the first dummy gate electrode, and the first dummy gate electrode. A second insulating film is deposited so as to cover the second dummy gate electrode, and the fourth insulating film is partially removed so that at least an upper portion of the first dummy gate electrode is exposed;
The exposed first dummy gate electrode is removed to provide a first slit, and a third conductive material is embedded in the first slit on the semiconductor region through a third gate insulating film, A third area around the second dummy gate electrode
Second conductive film is removed, and then the second dummy gate electrode is removed to provide a second slit, and the second slit is provided on the fourth gate insulating film in the second slit and in the first slit. Embedding a fourth conductive material on the conductive material of 3.
Further, a method of manufacturing a semiconductor device, which comprises forming a fourth conductive material, a third gate electrode and a fourth gate electrode in the first slit.