JP2003121605A - Antireflection film and method for manufacturing the same - Google Patents
Antireflection film and method for manufacturing the sameInfo
- Publication number
- JP2003121605A JP2003121605A JP2001320973A JP2001320973A JP2003121605A JP 2003121605 A JP2003121605 A JP 2003121605A JP 2001320973 A JP2001320973 A JP 2001320973A JP 2001320973 A JP2001320973 A JP 2001320973A JP 2003121605 A JP2003121605 A JP 2003121605A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- film
- index film
- antireflection film
- target
- Prior art date
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Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 31
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 150000003377 silicon compounds Chemical class 0.000 claims description 5
- 229910004012 SiCx Inorganic materials 0.000 claims description 4
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 79
- 230000015572 biosynthetic process Effects 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 150000001722 carbon compounds Chemical class 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 101001034314 Homo sapiens Lactadherin Proteins 0.000 description 1
- 102100039648 Lactadherin Human genes 0.000 description 1
- 101100219325 Phaseolus vulgaris BA13 gene Proteins 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000011294 coal tar pitch Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、陰極管表示装置
（ＣＲＴ）、液晶表示装置（ＬＣＤ）、プラズマディス
プレイパネル（ＰＤＰ）などのディスプレイに好適な反
射防止膜、これを製造する方法に関し、その方法により
得られた反射防止膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antireflection film suitable for displays such as a cathode ray tube display (CRT), a liquid crystal display (LCD), and a plasma display panel (PDP), and a method for manufacturing the same. The present invention relates to an antireflection film obtained by the method.
【０００２】[0002]
【従来の技術】従来から、ＣＲＴ、ＬＣＤ、ＰＤＰなど
のディスプレイ表面に外光反射を抑制し、視認性を向上
させる目的で反射防止膜が用いられている。この反射防
止膜は、高屈折率材料と低屈折率材料を交互に積層する
ことで、特定波長の光を透過させるものである。このよ
うな反射防止膜として、ＴｉＯ２、ＳｉＯ２、ＺｎＯの
透明膜を有機フィルム上に積層したものが知られている
（特開平１１−１４２６０３）。このような高屈折材料
と低屈折材料を積層するための方法として、スパッタリ
ング法が用いられている。この方法は、大面積で均一
の、ナノオーダーでの薄層形成が可能なためよく用いら
れている。2. Description of the Related Art Conventionally, an antireflection film has been used on a display surface of a CRT, LCD, PDP or the like for the purpose of suppressing reflection of external light and improving visibility. The antireflection film is made of a material having a high refractive index and a material having a low refractive index which are alternately laminated to transmit light having a specific wavelength. As such an antireflection film, a film in which a transparent film of TiO 2 , SiO 2 , and ZnO is laminated on an organic film is known (JP-A-11-142603). A sputtering method is used as a method for laminating such a high refractive material and a low refractive material. This method is often used because it is possible to form a uniform thin layer on the nano-order in a large area.
【０００３】[0003]
【発明が解決しようとする課題】しかし、これらの薄膜
はスパッタリングでの成膜速度が非常に遅く生産性が低
い。成膜速度を上昇させるために、近年スパッタリング
で用いるカソードを２つ並べ、交流を印加することで高
速でスパッタリングできる方法（デュアルカソード法）
が提案されている。しかしながらこの成膜速度は工業化
するのに充分に大きいとはいえない。また低屈折率薄膜
作成時に用いるＳｉターゲットは脆く、高パワーを印加
すると割れが生じるなどの問題がある。However, these thin films have a very low film formation rate in sputtering and low productivity. In order to increase the film formation rate, two cathodes used in recent years are lined up, and high-speed sputtering is possible by applying an alternating current (dual cathode method).
Is proposed. However, this film forming rate is not sufficiently high for industrialization. In addition, the Si target used when forming the low refractive index thin film is fragile, and there is a problem that cracking occurs when high power is applied.
【０００４】そこで本発明の目的は、高速に成膜を行う
ことができる方法を見出し、高パワーを印加しても割れ
の生じない強固なターゲットを見出すことにある。さら
に、生産性の良い反射防止膜を得ることを目的とする。Therefore, an object of the present invention is to find a method capable of forming a film at a high speed, and to find a strong target that does not crack even when a high power is applied. Furthermore, it aims at obtaining an antireflection film with good productivity.
【０００５】[0005]
【発明を解決するための手段】本発明は、基板上に低屈
折率膜と高屈折率膜を交互に積層された反射防止膜にお
いて、低屈折率膜が、導電性炭化ケイ素をターゲットと
して用い、高屈折率膜が、導電性酸化チタンをターゲッ
トとして用いてスパッタリングにより形成されているこ
とを特徴とする反射防止膜にある。According to the present invention, in an antireflection film in which a low refractive index film and a high refractive index film are alternately laminated on a substrate, the low refractive index film uses conductive silicon carbide as a target. The high-refractive index film is an antireflection film formed by sputtering using conductive titanium oxide as a target.
【０００６】導電性炭化ケイ素をターゲットとすること
で、割れなく高パワー印加を行うことができる。さらに
導電性酸化チタンおよび導電性炭化ケイ素をターゲット
としたことで成膜速度を大きくすることができる。By using conductive silicon carbide as a target, high power can be applied without cracking. Furthermore, by using conductive titanium oxide and conductive silicon carbide as targets, the film formation rate can be increased.
【０００７】また本発明は、低屈折率膜が、Ｓｉと、
Ｃ、Ｏ、Ｎからなる群より選択された少なくとも１種と
を含む化合物であり、高屈折率膜が、ＴｉとＯを含む化
合物からなる、上記の反射防止膜にある。In the present invention, the low refractive index film is made of Si.
The high-refractive-index film is a compound containing at least one selected from the group consisting of C, O, and N, and the high-refractive-index film is the above-described antireflection film.
【０００８】さらに本発明は、低屈折率膜が、ＳｉＣ
ｘ、ＳｉＯｘ、ＳｉＮｘ、ＳｉＣｘＯｙ、ＳｉＣｘＮ
ｙ、ＳｉＯｘＮｙ、ＳｉＣｘＯｙＮｚからなる群から選
ばれたケイ素化合物からなり（但しｘが０．１〜３、好
ましくは０．５〜２．５、ｙが０．１〜３、好ましくは
０．５〜２．５、ｚが０．１〜３、好ましくは０．５〜
２．５）、高屈折率膜が、ＴｉＯｔ（但しｔは０．１〜
３、好ましくは０．５〜２．５）からなることを特徴と
する上記の反射防止膜にある。Further, in the present invention, the low refractive index film is made of SiC.
x, SiOx, SiNx, SiCxOy, SiCxN
It consists of a silicon compound selected from the group consisting of y, SiOxNy and SiCxOyNz (where x is 0.1 to 3, preferably 0.5 to 2.5, y is 0.1 to 3, and preferably 0.5 to 2.5, z is 0.1 to 3, preferably 0.5 to
2.5), the high refractive index film is TiOt (where t is 0.1 to
3, preferably 0.5 to 2.5).
【０００９】３８０から７８０ｎｍの光の反射を防止
し、反射率が１０％以下である、上記反射防止膜が好ま
しい。The above antireflection film which prevents reflection of light of 380 to 780 nm and has a reflectance of 10% or less is preferable.
【００１０】さらに本発明は、基板上に低屈折率膜と高
屈折率膜を交互に積層することからなる反射防止膜の製
造方法において、低屈折率膜を、ターゲットとして導電
性炭化ケイ素を用いてスパッタリング法により形成し、
高屈折率膜を、ターゲットとして導電性酸化チタンを用
いてスパッタリング法により形成することを特徴とする
反射防止膜の製造方法にある。Further, the present invention is a method for producing an antireflection film comprising alternately laminating a low refractive index film and a high refractive index film on a substrate, and using the low refractive index film as a target, conductive silicon carbide is used. Formed by sputtering,
The method for producing an antireflection film is characterized in that the high refractive index film is formed by a sputtering method using conductive titanium oxide as a target.
【００１１】上記スパッタリング法が、マグネトロンス
パッタリング法であることを特徴とする方法が好まし
い。A method characterized in that the above-mentioned sputtering method is a magnetron sputtering method is preferable.
【００１２】また上記マグネトロンスパッタリング法
が、デュアルカソードマグネトロンスパッタリング法で
あることを特徴とする方法が好ましい。A method characterized in that the magnetron sputtering method is a dual cathode magnetron sputtering method is preferable.
【００１３】上記低屈折率膜が、不活性ガスと反応性ガ
スの混合ガス雰囲気下で成膜される方法が好ましい。A method is preferred in which the low refractive index film is formed in a mixed gas atmosphere of an inert gas and a reactive gas.
【００１４】上記反応性ガスが、分子中に酸素を含むガ
スであることを特徴とする方法が好ましい。A method characterized in that the reactive gas is a gas containing oxygen in the molecule is preferable.
【００１５】さらに本発明は、基板上に低屈折率膜と高
屈折率膜を交互に積層されてなる反射防止膜において、
低屈折率膜が、ＳｉＣｘ、ＳｉＮｘ、ＳｉＣｘＯｙ、Ｓ
ｉＣｘＮｙ、ＳｉＯｘＮｙ、ＳｉＣｘＯｙＮｚからなる
群から選ばれたケイ素化合物からなり（但しｘが０．１
〜３、好ましくは０．５〜２．５、ｙが０．１〜３、好
ましくは０．５〜２．５、ｚが０．１〜３、好ましくは
０．５〜２．５）、高屈折率膜が、ＴｉＯｔ（但しｔは
０．１〜３、好ましくは０．５〜２．５）からなる反射
防止膜にある。Furthermore, the present invention provides an antireflection film comprising a low refractive index film and a high refractive index film alternately laminated on a substrate,
Low-refractive index film is made of SiCx, SiNx, SiCxOy, S
A silicon compound selected from the group consisting of iCxNy, SiOxNy, and SiCxOyNz (where x is 0.1
-3, preferably 0.5-2.5, y is 0.1-3, preferably 0.5-2.5, z is 0.1-3, preferably 0.5-2.5), The high refractive index film is an antireflection film made of TiOt (where t is 0.1 to 3, preferably 0.5 to 2.5).
【００１６】上記低屈折率膜が、ＳｉＣｘＯｙからなる
ことが好ましい。The low refractive index film is preferably made of SiCxOy.
【００１７】加えて本発明は、上記反射防止膜を取り付
けたディスプレイにある。In addition, the present invention resides in a display provided with the above antireflection film.
【００１８】上記炭化ケイ素ターゲットの密度は、２．
９ｇ／ｃｍ３以上であることが好ましい。The density of the silicon carbide target is 2.
It is preferably 9 g / cm 3 or more.
【００１９】上記炭化ケイ素ターゲットは、炭化ケイ素
粉末と非金属系焼結助剤との混合物を焼結させることに
より得られたものであることが好ましい。The silicon carbide target is preferably obtained by sintering a mixture of silicon carbide powder and a non-metal type sintering aid.
【００２０】上記スパッタリング時に、炭素化合物が真
空チャンバー内に堆積せず、成膜中の透明導電膜中に混
入しないことが好ましい。At the time of the above-mentioned sputtering, it is preferable that the carbon compound is not deposited in the vacuum chamber and is not mixed in the transparent conductive film during film formation.
【００２１】上記スパッタリング時に、炭素化合物がガ
ス化し、真空チャンバー外に排気され、真空チャンバー
内に堆積せず、成膜中の透明導電膜中に混入しないこと
が好ましい。At the time of the sputtering, it is preferable that the carbon compound is gasified, exhausted to the outside of the vacuum chamber, does not deposit in the vacuum chamber, and is not mixed into the transparent conductive film during film formation.
【００２２】[0022]
【発明の実施の形態】以下、本発明の実施の形態につい
て具体的に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be specifically described below.
【００２３】図１は、本発明の反射防止膜の一例を示す
図である。本発明の反射防止膜は、基板１上に低屈折率
膜２と高屈折率膜３を交互に積層された基本構成を有す
る。FIG. 1 is a view showing an example of the antireflection film of the present invention. The antireflection film of the present invention has a basic structure in which a low refractive index film 2 and a high refractive index film 3 are alternately laminated on a substrate 1.
【００２４】低屈折率膜と高屈折率膜の積層の厚さと積
層数は、反射防止膜として求められる特性を持つように
任意に設計され、例えば、第１層ＳｉＣｘＯｙ １５ｎ
ｍ、第２層ＴｉＯｔ ３０ｎｍ、第３層ＳｉＣｘＯｙ
１２５ｎｍ、第４層ＴｉＯｔ９４．５ｎｍ（但しｘ＝
０．１〜３、ｙ＝０．１〜３、ｔ＝０．１〜３）を積層
することで可視光の反射防止膜の特性が得られる。The thickness and the number of layers of the low-refractive index film and the high-refractive index film are arbitrarily designed so as to have the characteristics required for the antireflection film. For example, the first layer SiCxOy 15n
m, second layer TiOt 30 nm, third layer SiCxOy
125 nm, fourth layer TiOt 94.5 nm (where x =
0.1-3, y = 0.1-3, t = 0.1-3) are laminated to obtain the characteristics of the antireflection film for visible light.
【００２５】本発明は、低屈折率膜を導電性炭化ケイ素
をターゲットとしたスパッタリング法により形成してい
る。これにより割れなく高パワーを印加することができ
る。さらに、高屈折率膜を導電性酸化チタンをターゲッ
トとしたスパッタリング法により形成している。このた
め成膜速度をより大きくすることができる。In the present invention, the low refractive index film is formed by the sputtering method using conductive silicon carbide as a target. As a result, high power can be applied without cracking. Further, the high refractive index film is formed by a sputtering method using conductive titanium oxide as a target. Therefore, the film forming rate can be increased.
【００２６】各層の厚さは同じでなくともよく、求めら
れる特性に応じて任意に設計される。The thickness of each layer does not have to be the same, and is designed arbitrarily according to the required characteristics.
【００２７】本発明のスパッタリングを施す基板１は、
ガラス、プラスチック、例えばポリエステル、ポリエチ
レンテレフタレート（ＰＥＴ)、ポリブチレンテレフタレ
ート、ポリメチルメタクリレート、アクリル、ポリカー
ボネート（ＰＣ）、ポリスチレン、ポリ塩化ビニリデ
ン、ポリエチレン、エチレン−酢酸ビニル共重合体、ポ
リビニルブチラール、金属イオン架橋エチレン−メタク
リル酸共重合体、ポリウレタン、セロファン等が挙げら
れるが、特にガラス、ＰＥＴが好ましい。The substrate 1 to be sputtered according to the present invention is
Glass, plastic such as polyester, polyethylene terephthalate (PET), polybutylene terephthalate, polymethylmethacrylate, acrylic, polycarbonate (PC), polystyrene, polyvinylidene chloride, polyethylene, ethylene-vinyl acetate copolymer, polyvinyl butyral, metal ion crosslinking Examples thereof include ethylene-methacrylic acid copolymer, polyurethane, and cellophane, and glass and PET are particularly preferable.
【００２８】基板の厚さは、透明性を妨げない厚さであ
ればよく、ＰＥＴの場合は、一般に１５０から２００μ
ｍである。The thickness of the substrate may be any thickness so long as it does not impair transparency, and in the case of PET, it is generally 150 to 200 μm.
m.
【００２９】ＰＥＴを基板として使用する場合、基板表
面を保護するためにその上にハードコートを積層しても
よく、その厚さは一般に４から６μｍである。ハードコ
ートの材料として、アクリル樹脂、エポキシ樹脂、ウレ
タン樹脂、シリコーン樹脂などが挙げられる。When PET is used as the substrate, a hard coat may be laminated thereon to protect the surface of the substrate, and the thickness thereof is generally 4 to 6 μm. Examples of hard coat materials include acrylic resins, epoxy resins, urethane resins, and silicone resins.
【００３０】低屈折率膜２は、ＳｉＣｘ、ＳｉＯｘ、Ｓ
ｉＮｘ、ＳｉＣｘＯｙ、ＳｉＣｘＮｙ、ＳｉＯｘＮｙ、
ＳｉＣｘＯｙＮｚからなる群から選ばれたケイ素化合物
からなり（但しｘが０．１〜３、ｙが０．１〜３、ｚが
０．１〜３）、高屈折率膜３は、ＴｉＯｔ（但しｔは
０．１〜３）からなる。The low refractive index film 2 is made of SiCx, SiOx, S.
iNx, SiCxOy, SiCxNy, SiOxNy,
It is made of a silicon compound selected from the group consisting of SiCxOyNz (where x is 0.1 to 3, y is 0.1 to 3 and z is 0.1 to 3), and the high refractive index film 3 is formed of TiOt (however, t. Is 0.1 to 3).
【００３１】高屈折率膜３は、導電性酸化チタンをター
ゲットとして用いたスパッタリングにより得られる。ま
た、低屈折率膜２は、導電性炭化ケイ素をターゲットと
して用いたスパッタリングにより得られる。The high refractive index film 3 is obtained by sputtering using conductive titanium oxide as a target. The low refractive index film 2 is obtained by sputtering using conductive silicon carbide as a target.
【００３２】導電性酸化チタンターゲットとは、一般に
体積固有抵抗値が２Ｅ−１Ω・ｃｍ以下であるターゲッ
トを意味する。また、導電性炭化ケイ素ターゲットと
は、一般に体積固有抵抗値が２Ｅ−２Ω・ｃｍ以下であ
るターゲットを意味する。導電性酸化チタンターゲッ
ト、導電性炭化ケイ素ターゲットを使用することで、成
膜速度が大きくなり、本方法の実用化が可能となる。The conductive titanium oxide target generally means a target having a volume resistivity value of 2E −1 Ω · cm or less. The conductive silicon carbide target generally means a target having a volume resistivity value of 2E −2 Ω · cm or less. By using a conductive titanium oxide target or a conductive silicon carbide target, the film formation rate is increased and the method can be put into practical use.
【００３３】導電性炭化ケイ素ターゲットとしては、炭
化ケイ素粉末をコールタールピッチ、フェノール樹脂、
フラン樹脂、エポキシ樹脂、グルコース、蔗糖、セルロ
ース、デンプンなどの非金属系焼結助剤で焼結して得ら
れる、密度２．９ｇ／ｃｍ３以上のものが好ましい。こ
のような高密度かつ均一なターゲットであれば、スパッ
タリング成膜時に高入力で安定した放電をおこなうこと
ができ、成膜速度を高めることができる。As the conductive silicon carbide target, silicon carbide powder is used as coal tar pitch, phenol resin,
It is preferable that the density is 2.9 g / cm 3 or more, which is obtained by sintering with a non-metal type sintering aid such as furan resin, epoxy resin, glucose, sucrose, cellulose, starch. With such a high density and uniform target, stable discharge can be performed with high input during sputtering film formation, and the film formation rate can be increased.
【００３４】導電性炭化ケイ素ターゲットを使用するこ
とで、炭化ケイ素から生じた炭素化合物が真空チャンバ
ー内でガス化し、真空チャンバーの外に排気され、その
ため真空チャンバー内に炭素化合物が堆積せず、成膜中
の反射防止膜に混入しないという利点がある。By using the conductive silicon carbide target, the carbon compound generated from silicon carbide is gasified in the vacuum chamber and is exhausted out of the vacuum chamber, so that the carbon compound is not deposited in the vacuum chamber and the formation of the carbon compound occurs. There is an advantage that it does not mix with the antireflection film in the film.
【００３５】本発明で用いられるスパッタリング法は、
マグネトロンスパッタリング法が好ましい。デュアルカ
ソード式マグネトロンスパッタリング法も用いることが
でき、これによりさらに高速に成膜を行うことができ
る。The sputtering method used in the present invention is
The magnetron sputtering method is preferred. A dual-cathode magnetron sputtering method can also be used, which makes it possible to perform film formation at a higher speed.
【００３６】供給ガス、供給ガス流量、圧力、供給電力
などのスパッタリングの条件は、用いるターゲット、成
膜速度などを考慮して、任意に設定することができる。The sputtering conditions such as the supply gas, the supply gas flow rate, the pressure and the supply power can be arbitrarily set in consideration of the target to be used, the film forming rate and the like.
【００３７】[0037]
【実施例】以下実施例と比較例により本発明を具体的に
説明するが、本発明は以下の実施例に限定されるもので
はない。EXAMPLES The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited to the following examples.
【００３８】[実施例]低屈折率層の成膜は、スパッタリ
ング装置としてマグネトロンスパッタリング装置を用
い、基材をガラスとし、ターゲット材料を導電性炭化ケ
イ素（ブリヂストン製、抵抗値２Ｅ−２Ω・ｃｍ）とし
て、供給ガスがアルゴン１０ｃｃ／ｍｉｎ＋酸素ガス３
ｃｃ／ｍｉｎ、圧力が５ｍＴｏｒｒ、供給電力が１．２
ｋＷのスパッタリング条件で行った。[Examples] For the formation of the low refractive index layer, a magnetron sputtering device was used as a sputtering device, glass was used as the substrate, and conductive silicon carbide was used as the target material (manufactured by Bridgestone, resistance value 2E -2 Ω · cm). ), The supply gas is argon 10 cc / min + oxygen gas 3
cc / min, pressure 5 mTorr, power supply 1.2
It was performed under the sputtering conditions of kW.
【００３９】高屈折率層の成膜は、スパッタリング装置
としてマグネトロンスパッタリング装置を用い、基材を
ガラスとし、ターゲット材料を導電性酸化チタン（旭硝
子製、抵抗値２Ｅ−１Ω・ｃｍ）として、供給ガスがア
ルゴン１０ｃｃ／ｍｉｎ、圧力が５ｍＴｏｒｒ、供給電
力が１．２ｋＷのスパッタリング条件で行った。The high refractive index layer is deposited by using a magnetron sputtering device as a sputtering device, using glass as a base material, and conductive titanium oxide (made by Asahi Glass, resistance value: 2E -1 Ω · cm) as a target material. The sputtering was performed under the conditions that the gas was argon 10 cc / min, the pressure was 5 mTorr, and the power supply was 1.2 kW.
【００４０】[比較例]低屈折率層の成膜は、スパッタリ
ング装置としてマグネトロンスパッタリング装置を用
い、基材をガラスとし、ターゲット材料をＳｉとして、
供給ガスがアルゴン５ｃｃ／ｍｉｎ＋酸素ガス５ｃｃ／
ｍｉｎ、圧力が５ｍＴｏｒｒ、供給電力が１．２ｋＷの
スパッタリング条件で行った。[Comparative Example] The low refractive index layer was formed by using a magnetron sputtering device as a sputtering device, using glass as the base material, and Si as the target material.
Supply gas is argon 5 cc / min + oxygen gas 5 cc /
The sputtering was performed under the conditions of min, pressure of 5 mTorr and supply power of 1.2 kW.
【００４１】高屈折率層の成膜は、スパッタリング装置
として、マグネトロンスパッタリング装置を用い、基材
をガラスとし、ターゲット材料をＴｉとして、供給ガス
がアルゴン５ｃｃ／ｍｉｎ＋酸素ガス５ｃｃ／ｍｉｎ、
圧力が５ｍＴｏｒｒ、供給電力が１．２ｋＷのスパッタ
リング条件で行った。The high refractive index layer is formed by using a magnetron sputtering apparatus as a sputtering apparatus, glass as a base material, Ti as a target material, and an argon gas of 5 cc / min + oxygen gas of 5 cc / min.
The sputtering was performed under the conditions of a pressure of 5 mTorr and a power supply of 1.2 kW.
【００４２】表１に示す層構成、膜厚で反射防止膜を作
製した。作製した膜の光学性能を図２に示す。An antireflection film having the layer structure and film thickness shown in Table 1 was prepared. The optical performance of the produced film is shown in FIG.
【００４３】[0043]
【表１】 ｘ＝０．８、ｙ＝１．２、ｔ＝１．９を表す。[Table 1] It represents x = 0.8, y = 1.2, and t = 1.9.
【００４４】表１に示したように実施例では４層の反射
防止膜を約９分半で作製できるのに対し、比較例では２
時間以上成膜に時間を要することが判った。As shown in Table 1, in the example, a four-layer antireflection film can be formed in about 9 minutes and a half, whereas in the comparative example, the antireflection film can be formed in 2 minutes.
It was found that it takes more time to form the film.
【００４５】[0045]
【発明の効果】導電性炭化ケイ素および導電性酸化チタ
ンをターゲットとして用いたスパッタリングにより、基
板上に反射防止膜の層を高速で安定して作製することが
でき、生産性に富んだ反射防止膜を容易に作製すること
ができる。EFFECTS OF THE INVENTION An antireflection film having high productivity can be stably formed at a high speed on a substrate by sputtering using conductive silicon carbide and conductive titanium oxide as targets. Can be easily manufactured.
【図１】本発明の反射防止膜の一例を示す断面図であ
る。FIG. 1 is a cross-sectional view showing an example of an antireflection film of the present invention.
【図２】実施例の反射防止膜の反射率を示すグラフであ
る。FIG. 2 is a graph showing the reflectance of the antireflection film of the example.
１ 基板 ２ 低屈折率膜 ３ 高屈折率膜 1 substrate 2 Low refractive index film 3 High refractive index film
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2K009 AA02 AA07 CC02 CC03 DD04 EE03 4F100 AA12B AA12D AA16B AA16D AA20B AA20D AA21C AA21E AD05B AD05D AD08B AD08D AG00 AR00B AR00C AR00D AR00E AT00A BA03 BA04 BA05 BA07 BA08 BA10A BA10D BA10E BA13 BA26 EH662 EJ602 GB41 JG01B JG01C JG01D JG01E JL02 JN06 JN18B JN18C JN18D JN18E YY00B YY00D 4K029 AA09 AA11 BA17 BA35 BA46 BA48 BA54 BA58 BB02 BC07 CA05 DC05 DC30 DC39 5C040 GH10 JA07 KA20 KB06 KB13 MA04 ─────────────────────────────────────────────────── ─── Continued front page F term (reference) 2K009 AA02 AA07 CC02 CC03 DD04 EE03 4F100 AA12B AA12D AA16B AA16D AA20B AA20D AA21C AA21E AD05B AD05D AD08B AD08D AG00 AR00B AR00C AR00D AR00E AT00A BA03 BA04 BA05 BA07 BA08 BA10A BA10D BA10E BA13 BA26 EH662 EJ602 GB41 JG01B JG01C JG01D JG01E JL02 JN06 JN18B JN18C JN18D JN18E YY00B YY00D 4K029 AA09 AA11 BA17 BA35 BA46 BA48 BA54 BA58 BB02 BC07 CA05 DC05 DC30 DC39 5C040 GH10 JA07 KA20 KB06 KB13 MA04
Claims (12)
積層されてなる反射防止膜において、低屈折率膜が、導
電性炭化ケイ素をターゲットとして用い、高屈折率膜
が、導電性酸化チタンをターゲットとして用いてスパッ
タリングにより形成されていることを特徴とする反射防
止膜。1. An antireflection film comprising a low refractive index film and a high refractive index film alternately laminated on a substrate, wherein the low refractive index film uses conductive silicon carbide as a target, and the high refractive index film comprises: An antireflection film, which is formed by sputtering using conductive titanium oxide as a target.
る群より選択された少なくとも１種とを含む化合物から
なり、高屈折率膜が、ＴｉとＯを含む化合物からなる、
請求項１に記載の反射防止膜。2. The low refractive index film is made of a compound containing Si and at least one selected from the group consisting of C, O and N, and the high refractive index film is made of a compound containing Ti and O. ,
The antireflection film according to claim 1.
Ｎｘ、ＳｉＣｘＯｙ、ＳｉＣｘＮｙ、ＳｉＯｘＮｙ、Ｓ
ｉＣｘＯｙＮｚからなる群から選ばれたケイ素化合物か
らなり（但しｘが０．１〜３、ｙが０．１〜３、ｚが
０．１〜３）、高屈折率膜が、ＴｉＯｔ（但しｔは０．
１〜３）からなることを特徴とする請求項１または２に
記載の反射防止膜。3. A low-refractive-index film is formed of SiCx, SiOx, Si.
Nx, SiCxOy, SiCxNy, SiOxNy, S
A high-refractive-index film made of a silicon compound selected from the group consisting of iCxOyNz (where x is 0.1 to 3, y is 0.1 to 3, and z is 0.1 to 3) is TiOt (where t is 0.
1-3) The antireflection film according to claim 1 or 2, comprising:
反射を防止する、請求項１から３のいずれかに記載の反
射防止膜。4. The antireflection film according to claim 1, which prevents reflection of light having a wavelength of 380 to 780 nm.
積層することからなる反射防止膜の製造方法において、
低屈折率膜を、ターゲットとして導電性炭化ケイ素を用
いてスパッタリング法により形成し、高屈折率膜を、タ
ーゲットとして導電性酸化チタンを用いてスパッタリン
グ法により形成することを特徴とする反射防止膜の製造
方法。5. A method of manufacturing an antireflection film, which comprises alternately laminating a low refractive index film and a high refractive index film on a substrate,
A low-refractive-index film is formed by a sputtering method using conductive silicon carbide as a target, and a high-refractive-index film is formed by a sputtering method using conductive titanium oxide as a target. Production method.
リング法であることを特徴とする請求項５に記載の方
法。6. The method according to claim 5, wherein the sputtering method is a magnetron sputtering method.
ルカソードマグネトロンスパッタリング法であることを
特徴とする請求項６に記載の方法。7. The method according to claim 6, wherein the magnetron sputtering method is a dual cathode magnetron sputtering method.
混合ガス雰囲気下で成膜される請求項５から７のいずれ
かに記載の方法。8. The method according to claim 5, wherein the low refractive index film is formed in a mixed gas atmosphere of an inert gas and a reactive gas.
あることを特徴とする請求項８に記載の方法。9. The method according to claim 8, wherein the reactive gas is a gas containing oxygen in its molecule.
に積層されてなる反射防止膜において、低屈折率膜が、
ＳｉＣｘ、ＳｉＮｘ、ＳｉＣｘＯｙ、ＳｉＣｘＮｙ、Ｓ
ｉＯｘＮｙ、ＳｉＣｘＯｙＮｚからなる群から選ばれた
ケイ素化合物からなり（但しｘが０．１〜３、ｙが０．
１〜３、ｚが０．１〜３）、高屈折率膜が、ＴｉＯｔ
（但しｔは０．１〜３）からなる反射防止膜。10. An antireflection film comprising low refractive index films and high refractive index films alternately laminated on a substrate, wherein the low refractive index film comprises:
SiCx, SiNx, SiCxOy, SiCxNy, S
A silicon compound selected from the group consisting of iOxNy and SiCxOyNz (where x is 0.1 to 3 and y is 0.
1-3, z is 0.1-3), and the high refractive index film is TiOt.
(However, t is 0.1 to 3).
求項１０に記載の反射防止膜。11. The antireflection film according to claim 10, wherein the low refractive index film is made of SiCxOy.
れかに記載の反射防止膜を取り付けたディスプレイ。12. A display provided with the antireflection film according to any one of claims 1 to 4, 10 and 11.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001320973A JP2003121605A (en) | 2001-10-18 | 2001-10-18 | Antireflection film and method for manufacturing the same |
| EP02785927A EP1437609A4 (en) | 2001-10-18 | 2002-10-18 | Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film |
| US10/492,847 US20040240093A1 (en) | 2001-10-18 | 2002-10-18 | Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film |
| PCT/JP2002/010826 WO2003034106A1 (en) | 2001-10-18 | 2002-10-18 | Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001320973A JP2003121605A (en) | 2001-10-18 | 2001-10-18 | Antireflection film and method for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003121605A true JP2003121605A (en) | 2003-04-23 |
Family
ID=19138273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001320973A Pending JP2003121605A (en) | 2001-10-18 | 2001-10-18 | Antireflection film and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003121605A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005060789A (en) * | 2003-08-18 | 2005-03-10 | Toshiba Corp | Sputtering target for forming oxide film and manufacturing method of oxide film using the same |
| WO2009131206A1 (en) | 2008-04-24 | 2009-10-29 | 旭硝子株式会社 | Low reflection glass and protective plate for display |
| US7842168B2 (en) | 2003-04-25 | 2010-11-30 | Asahi Glass Company, Limited | Method for producing silicon oxide film and method for producing optical multilayer film |
| CN104136946A (en) * | 2012-02-29 | 2014-11-05 | 柯尼卡美能达株式会社 | Near-infrared reflective film and near-infrared reflective glass using same |
-
2001
- 2001-10-18 JP JP2001320973A patent/JP2003121605A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7842168B2 (en) | 2003-04-25 | 2010-11-30 | Asahi Glass Company, Limited | Method for producing silicon oxide film and method for producing optical multilayer film |
| JP2005060789A (en) * | 2003-08-18 | 2005-03-10 | Toshiba Corp | Sputtering target for forming oxide film and manufacturing method of oxide film using the same |
| WO2009131206A1 (en) | 2008-04-24 | 2009-10-29 | 旭硝子株式会社 | Low reflection glass and protective plate for display |
| US8287994B2 (en) | 2008-04-24 | 2012-10-16 | Asahi Glass Company, Limited | Low reflection glass and protective plate for display |
| JP5163742B2 (en) * | 2008-04-24 | 2013-03-13 | 旭硝子株式会社 | Low reflection glass and protective plate for display |
| CN104136946A (en) * | 2012-02-29 | 2014-11-05 | 柯尼卡美能达株式会社 | Near-infrared reflective film and near-infrared reflective glass using same |
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