JP2003121470A - Probe manufacturing method and probe - Google Patents

Abstract

(57) [Abstract] [Purpose] To manufacture a probe that can cope with highly integrated and miniaturized semiconductor integrated circuits. A first resist layer 231 having a first opening 232 exposing a lower contact portion 310 of an intermediate substrate 300 is formed on an intermediate substrate 300 of a probe card. The first plating structure 130A having conductivity is formed by connecting to the lower contact portion 310, and the first plating structure 130A is formed.
A second resist layer 241 having a second opening 242 extending above the first resist layer 231 is formed on the first resist layer 231 by exposing a part of the second resist layer 231.
The second plating structure 120A having a conductivity of 0 is formed by connecting the second plating structure 120A to the first plating structure 130A.
A third resist layer 261 having a third opening 262 exposing the other end of 20A is formed on the second resist layer 241 and the second plating structure 120A, and the third opening 262 becomes a contact portion 110. The third plating structure 110A having conductivity is formed by being connected to the second plating structure 120A.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe used in a probe card for measuring various electrical characteristics of a semiconductor integrated circuit or the like which is an object to be measured and a method for manufacturing the probe.

[0002]

2. Description of the Related Art For example, in a cantilever type probe card for measuring electrical characteristics of a semiconductor integrated circuit, a large number of probes are mounted on a substrate by manual work or machining.

[0003]

However, semiconductor integrated circuits, LCD devices, etc., which are objects to be measured, are rapidly being highly integrated and miniaturized, and they are used for measuring various electrical characteristics thereof. As for the probe card, the conventional cantilever type that is manufactured by mechanical processing and manual work cannot be used. That is, when many probes are manually arranged on the substrate, it is very time-consuming because there are variations in the height and position accuracy of the contact portion at the tip of the probe that contacts the electrode of the measurement target. Also,
Variations in height and position accuracy of the contact portion have been a factor of lacking stability of contact of the measurement target with the electrode. further,
Since manual assembly requires skill, production cost,
There are also undesirable points in terms of production time.

The present invention has been devised in view of the above circumstances, and provides a method of manufacturing a probe and a probe which can deal with a measurement object such as a semiconductor integrated circuit which has been highly integrated and miniaturized. The purpose is to do.

[0005]

According to the method of manufacturing a probe of the present invention, a first resist layer having a first opening exposing a lower contact portion of an intermediate substrate is formed on an intermediate substrate constituting a probe card. A step of forming, a step of forming a conductive first plating structure serving as a connection part in the first opening by connecting the lower contact part, and at least a part of the first plating structure is exposed And the first resist layer having a second opening extending over the first resist layer is formed into a first resist layer.
Forming a resist layer on the resist layer; and forming a conductive second plating structure, which serves as an arm portion, in the second opening.
Forming a third resist layer having a third opening exposing the other end of the second plating structure on the second resist layer and the second plating structure; And a step of forming a conductive third plating structure serving as a contact portion in the third opening by connecting to the second plating structure.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic explanatory view showing steps of forming a first plated structure in a probe manufacturing method according to a first embodiment of the present invention, and FIG. Of the method of manufacturing the probe according to the first embodiment of the invention,
FIG. 3 is a schematic explanatory view showing a process up to forming the second plated structure, and FIG. 3 is a process up to forming the third plated structure in the probe manufacturing method according to the first embodiment of the present invention. FIG. 4 is a schematic front view of a probe manufactured by the probe manufacturing method according to the first embodiment of the present invention, and FIG. 5 is related to the second embodiment of the present invention. FIG. 6 is a schematic explanatory view showing a configuration for forming a third plated structure in the probe manufacturing method.
FIG. 7 is a schematic front view of a probe manufactured by the probe manufacturing method according to the embodiment, and FIG. 7 is a schematic front view of a probe card using the probe manufactured by the probe manufacturing method according to the present invention. In the drawings, particularly the drawings of the steps showing the method for manufacturing the probe, the dimensions of the respective parts are different from the actual ones.

First, before describing the method of manufacturing a probe according to the first embodiment of the present invention, a probe 100 manufactured by this method of manufacturing a probe will be described with reference to FIG.

As shown in FIG. 4, the probe 100 has a contact portion 110 having a tip protruding upward and an arm portion 12 extending horizontally from the lower end of the contact portion 110.
0 and a connecting portion 130 extending downward from the end of the arm portion 120 are integrally formed. Contact part 11
Reference numeral 0 denotes a portion that comes into contact with the electrode 710 of the semiconductor integrated circuit 700 or the like that is the measurement target, and the connection portion 130 electrically and mechanically connects to the lower contact portion 310 of the intermediate substrate 300 that forms a part of the probe card. Is the part that is physically connected. In the probe manufacturing method according to the first embodiment, the probe 100 is manufactured in a state of being connected to the intermediate substrate 300. In addition, the probe 100 is generally used in several hundreds to several thousands in one probe card.
The probe 100 has a contact portion 11 at the tip during manufacture.
0 is upward, but when the probe is attached to the probe card, the contact portion 110 is turned upside down. 1 to 6, the lower contact portion 310 of the intermediate substrate 300 is shown on the upper side, but this intermediate substrate 3
When 00 is incorporated in the probe card, it is repeatedly used, so that the lower contact portion 310 is located on the lower side.

In the method of manufacturing a probe according to the embodiment of the present invention, the first contact portion 310 of the intermediate substrate 300 is exposed on the intermediate substrate 300 constituting the probe card.
The step of forming the first resist layer 231 having the opening 232, and the conductive first plating structure 130A serving as the connecting portion 130 in the first opening 232 is applied to the lower contact portion 3.
And forming at least a part of the first plating structure 130A, and
Forming a second resist layer 241 having a second opening 242 extending on the resist layer 231 on the first resist layer 231; and arm part 120 in the second opening 242.
And forming a conductive second plating structure 120A which is to be connected to the first plating structure 130A,
Forming a third resist layer 261 having a third opening 262 exposing the other end of the second plated structure 120A on the second resist layer 241 and the second plated structure 120A; The contact portion 11 contacts the third opening 262.
And a step of forming a third plating structure 110A having a conductivity of 0 and being connected to the second plating structure 120A.

First, as shown in FIGS. 1A and 4, the intermediate substrate 300 forming a part of the probe card has a lower contact portion 310 on the upper surface thereof on which the electrodes 710 of the semiconductor integrated circuit 700 are arranged. Correspondingly installed. In addition, an upper contact portion 320 is installed on the lower surface of the intermediate substrate 300 so as to correspond to a wiring pattern 510 of the mother boat 500 described later. Then, the lower contact portion 310 and the upper contact portion 320
Are electrically connected to each other by the intermediate wiring portion 330.

A photoresist 230 is applied to the upper surface of the intermediate substrate 300 by an appropriate method such as spin coating (see FIG. 1B). And this photoresist 23
For 0, exposure is performed using a mask (not shown) corresponding to the arrangement pattern of the lower contact portion 310, that is, an opening (not shown) provided at the same position as the position of the lower contact portion 310. Done. Further, the exposed photoresist 230 is developed, and as shown in FIG. 1C, the photoresist 2 is exposed only from above the lower contact portion 310.
A first resist layer 231 having a first opening 232 from which 30 is removed is formed. The first resist layer 231
On the other hand, polishing is performed to ensure flatness.
A photosensitive thick film resist is used as the photoresist 230 for forming the first resist layer 230.

A portion of the upper portion of the lower contact portion 310 where the photoresist 230 is removed, that is, a depth dimension of the first opening 232 is about 50 to 200 μm.

The intermediate substrate 300 is plated to form a first plated structure 130A extending over the lower contact portion 310 and the first opening 232 (see FIG. 1D). The first plated structure 130A serves as the connecting portion 130 of the probe 100. In addition, the first plating structure 130
After forming A, polishing is performed to secure the flatness of the surface.

Next, a photoresist 240 to be the second resist layer 241 is applied on the first plated structure 130A and the first resist layer 231 by an appropriate method such as spin coating (FIG. 2A). reference). A photosensitive thick film resist is used for the photoresist 240.

The photoresist 240 is exposed using a mask (not shown) having an opening (not shown) corresponding to the arm portion 120 of the probe 100. Further, the exposed photoresist 240 is developed to form a second resist layer 241 having a second opening 242 in which at least the first plating structure 130A is exposed (see FIG. 2B). The second resist layer 241 is polished to ensure flatness.

The second opening 242 formed in the second resist layer 241 has a depth of about ten to several hundreds μm and a length of several hundreds μm to 1 mm.

On the upper surface of the second resist layer 241 and the exposed upper surface of the first resist layer 231, as shown in FIG. 2C, a seed layer which becomes an electrode when the second plated structure 120A is formed. 250 is formed.

The intermediate substrate 300 is plated to form a second plated structure 120A in the second opening 242 (see FIG. 2D). This second plating structure 120A
The second plating structure 120A is the first resist layer 231.
Is formed so as to extend over the first plating structure 130 and is electrically and mechanically connected to the first plated structure 130A via the seed layer 250. In this way, the second plated structure 1
20A serves as the arm portion 120 of the probe 100. In addition, after forming the second plated structure 120A,
Polishing is performed to ensure the flatness of the surface. By this polishing, the portion of the seed layer 250 formed on the upper surface of the second resist layer 241 is removed.

Further, on the second resist layer 242 and the second plated structure 120A, a photoresist 260, which is a photosensitive thick film resist to be the third resist layer 261, is applied by an appropriate method such as spin coating. (See FIG. 3A). The photoresist 260 is exposed using a mask (not shown) having an opening (not shown) corresponding to the contact portion 110 of the probe 100. The opening of this mask is arranged so as to overlap a part of the second plated structure 120A, specifically, a side opposite to the side on which the first plated structure 130A is formed. In addition, the exposed photoresist 260 is developed to expose at least the second plated structure 120A to the third opening 2.
A third resist layer 261 having 62 is formed (FIG. 3).
(See (B)). The third resist layer 261 is polished to ensure flatness.

Next, the upper surface of the third resist layer 261 and the exposed upper surface of the second plated structure 120A are formed on the upper surface of FIG.
As shown in (C), a seed layer 270 to be an electrode when forming the third plated structure 110A is formed.

Further, the intermediate substrate 300 is plated to form the third plated structure 110A in the third opening 262 (see FIG. 3D). This third plating structure 110
Part A of the second plated structure 120A is exposed from the third opening 262, and thus A is formed in a state of being electrically and mechanically connected to the second plated structure 120A. Also,
Since the third opening 262 is disposed at the end on the side opposite to the side where the first plated structure 130A is formed,
The third plating structure 110A is the first plating structure 130.
It will be formed on the side opposite to A. The third plated structure 110A serves as the contact portion 110 of the probe 100. Further, after forming the third plated structure 110A, polishing is performed to ensure the flatness of the surface. By this polishing, the portion of the seed layer 270 formed on the upper surface of the third resist layer 261 is removed. The third plated structure 110A may have a quadrangular pyramid shape.

The depth of the third opening 262, that is, the height dimension of the third plated structure 110A serving as the contact portion 110 is about 50 to 300 μm. Semiconductor integrated circuit 7
It is necessary to bring the probe 100 into contact with the electrode 710 of the semiconductor integrated circuit 700 when measuring various electrical characteristics of the semiconductor integrated circuit 700. Since an oxide film is generally formed on the surface of the electrode 710, the probe 100 may be attached to the electrode 710.
It cannot be said that they are electrically conducted simply by making them contact. The electrical conduction can be ensured only by removing the oxide film and contacting the internal conduction layer. To this end, the probe 100 is connected to the electrode 71.
It is necessary to make a pressure contact with 0 at a pressure of a certain value or more. Generally, it is necessary to move the probe card and the semiconductor integrated circuit 700 by several tens of μm after the probe 100 comes into contact with the electrode 710 in a direction that promotes contact (hereinafter, referred to as “overdrive”). become.
This overdrive is required to be about 20 μm or more. Further, the position of the height of the contact portion 110 at the tip of the plurality of probes 100 constituting the probe card varies by several tens of μm. Also, there is some variation in the test environment. Therefore, in order for all the probes 100 to stably conduct electricity to the electrodes 710, it is necessary to have several tens of μm.
Therefore, an overdrive of about 200 μm is required. When this overdrive is performed, in the probe 100, the arm portion 120 is deformed. However, if a part of the arm portion 120 comes into contact with the semiconductor integrated circuit 700 by performing overdriving, it may damage the semiconductor integrated circuit 700, and therefore it should be avoided. Therefore, when the height dimension of the contact portion 110 is set to about 50 to 300 μm, the contact of the arm portion 120 with the semiconductor integrated circuit 700 due to overdrive is eliminated.

The opening of the mask at the time of forming the third resist layer 261 is a semiconductor integrated circuit 70 which is an object to be measured.
Since it is formed at the position corresponding to the arrangement pattern of the electrode 710 of 0, the arrangement pattern of the formed third plating structure 110A is the position corresponding to the arrangement pattern of the electrode 710.

By going through such steps, FIG.
The probe 100 as shown in FIG. 3 is manufactured, and also a large number of probes 100 are manufactured at a time in a state of being connected to the intermediate substrate 300.

Next, an operation of manufacturing a probe card using the probe manufactured by the above-described probe manufacturing method will be described with reference to FIG.

The first to third resist layers 231, 241, 261 are removed using a known photoresist removing device. As a result, as shown in FIG. 4, a large number of probes 1 with the connecting portion 130 connected to the intermediate substrate 300 are provided.
00 is completed.

In the state in which the probe 100 in which the connecting portion 130 is connected to the intermediate substrate 300 is completed, the contact portion 110 faces upward, but when actually used as a probe card, the contact portion 110 is repeatedly turned upside down. Make it face down. The intermediate substrate 300 to which the large number of probes 100 are connected is attached to the mother board 500, and the upper contact portion 320 of the intermediate substrate 300 and the lower surface of the wiring pattern 510 of the mother board 500 are attached by using an appropriate conductive means 520 such as a wire. The probe card is completed by connecting the side exposed portion 511.

Numeral 530 in FIG. 7 is a mounting member for mounting the intermediate substrate 300 on the mother board 500. Further, 600 is the semiconductor integrated circuit 7 in a wafer state.
This is a table that holds 00 by suction.

Although the third resist layer 261 for forming the contact portion 110 of the probe 100 is one layer in the above-described embodiment, a plurality of third resist layers 261 are provided as in the second embodiment described below. It can also be a layer. That is, as shown in FIG.
By dividing the third resist layer 261 forming the film into two layers of a 3-1st resist layer 261A and a 3-2nd resist layer 261B, the third plating structure becomes the 3-1st plating structure 110A1. The contact portion 110 composed of the 3-2nd plated structure 110A2 can be a multistage probe.

The process for this is as follows. That is, the third resist layer 261 shown in FIG.
As the 3-1st resist layer 261A shown in (A), a photoresist 260B which is a photosensitive thick film resist is applied on the upper surface of the 3-1st resist layer 261A by an appropriate method such as spin coating (see FIG. See A)). Then, the photoresist 260B is exposed and developed to form an opening 262B smaller than the 3-1st plated structure 110A1.
The third resist layer 261B is formed on the first resist layer 261B (see FIG. 5B). In this state, the 3-1st plated structure 110A1 is already formed in the third opening 262.

Next, a seed layer 280 is formed on the upper surface of the 3-2nd resist layer 261B and the opening 262B (see FIG. 5C). Then, the intermediate substrate 300 is plated, and the 3-2nd plated structure 110A2 is electrically and mechanically connected to the 3-1st plated structure 110A1.
Are formed (see FIG. 5D). In addition, the opening 262
Since B is smaller than the third opening 262, the 3-2nd plated structure 110A2 is the 3-1st plated structure 110A1.
It is getting smaller.

Although the contact portion 110 has two stages in the above-described second embodiment, it may have three or more stages.

[0033]

According to the method for manufacturing a probe card of the present invention, a step of forming a first resist layer having a first opening exposing a lower contact portion of the intermediate substrate on an intermediate substrate constituting the probe card. And a step of forming a conductive first plating structure serving as a connection part in the first opening by connecting to the lower contact part, and exposing at least a part of the first plating structure, A step of forming a second resist layer having a second opening extending on the first resist layer on the first resist layer, and a conductive second plating structure serving as an arm portion in the second opening. And forming a third resist layer having a third opening exposing the other end of the second plating structure, the second resist layer and the second plating. Forming on the structure, The third plating structure having conductivity as a contact portion to the serial third opening and a step of forming in connection with the second plating structure.

As described above, when the probes are manufactured by using the photolithography technique, a large number of probes corresponding to the arrangement of the electrodes of the semiconductor integrated circuit which is the measurement object can be manufactured simultaneously from the beginning. Moreover, this probe is manufactured in a state in which a large number of probes are simultaneously and uniformly connected to the intermediate substrate that constitutes a part of the probe card in advance. It is not necessary to attach it to the intermediate substrate. Therefore, it is possible to obtain the effect of improving the work efficiency and reducing the cost accordingly. Further, since the work of attaching the probe card to the intermediate substrate is unnecessary, the height and position accuracy of the contact portion at the tip of the probe can be improved. Further, it is possible to provide a so-called next-generation probe card that can be applied to a semiconductor integrated circuit or the like that is highly integrated and miniaturized.

Further, if the contact portion is of a multi-stage type, the portion in contact with the electrode of the semiconductor integrated circuit can be made small, so that the insulating layer formed on the surface of the electrode is destroyed to achieve good conduction. Helps to secure.

Further, since the third opening is formed corresponding to the arrangement pattern of the electrodes of the semiconductor integrated circuit which is the object to be measured, it is possible to improve the working efficiency.

[Brief description of drawings]

FIG. 1 is a schematic explanatory diagram showing steps up to forming a first plated structure in a method for manufacturing a probe according to a first embodiment of the present invention.

FIG. 2 is a schematic explanatory view showing a process up to forming a second plated structure in the probe manufacturing method according to the first embodiment of the present invention.

FIG. 3 is a schematic explanatory view showing steps up to forming a third plated structure in the probe manufacturing method according to the first embodiment of the present invention.

FIG. 4 is a schematic front view of the probe manufactured by the method of manufacturing the probe according to the first embodiment of the present invention.

FIG. 5 is a schematic explanatory view showing a configuration for forming a third plated structure in the probe manufacturing method according to the second embodiment of the present invention.

FIG. 6 is a schematic front view of a probe manufactured by a probe manufacturing method according to a second embodiment of the present invention.

FIG. 7 is a schematic front view of a probe card using a probe manufactured by the method for manufacturing a probe according to the present invention.

[Explanation of symbols]

100 probes 110 contact part 110A Third plating structure 120 arm 120A Second plating structure 130 connection 130A First plating structure 231 First resist layer 232 First opening 241 second resist layer 242 Second opening 261 Third resist layer 262 3rd opening 300 intermediate substrate 310 Lower contact part

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Tetsuji Ueno             2-5-13 Nishi-Nagasu-cho, Amagasaki-shi, Hyogo             Inside the Electronic Materials Co., Ltd. (72) Inventor Moriomi             2-5-13 Nishi-Nagasu-cho, Amagasaki-shi, Hyogo             Inside the Electronic Materials Co., Ltd. (72) Inventor Shinichiro Furusaki             2-5-13 Nishi-Nagasu-cho, Amagasaki-shi, Hyogo             Inside the Electronic Materials Co., Ltd. (72) Inventor Yasuo Miura             2-5-13 Nishi-Nagasu-cho, Amagasaki-shi, Hyogo             Inside the Electronic Materials Co., Ltd. (72) Inventor Teppei Kimura             2-5-13 Nishi-Nagasu-cho, Amagasaki-shi, Hyogo             Inside the Electronic Materials Co., Ltd. F-term (reference) 2G003 AA07 AB01 AG03 AG12 AH04                 2G011 AA10 AA16 AA18 AC14 AE03                       AF07                 4M106 AA01 BA01 CA70 DD03 DD10                       DD30

Claims (5)

[Claims] 1. A step of forming a first resist layer having a first opening exposing a lower contact portion of the intermediate substrate on an intermediate substrate constituting a probe card, and forming a connection portion in the first opening. Forming a conductive first plating structure connected to the lower contact portion, exposing at least a portion of the first plating structure, and extending over the first resist layer; Forming a second resist layer having two openings on the first resist layer, and connecting a conductive second plating structure serving as an arm portion to the second opening with the first plating structure. Forming a third resist layer having a third opening exposing the other end of the second plating structure on the second resist layer and the second plating structure; The third opening, which has conductivity and serves as a contact portion 3. A method for manufacturing a probe, comprising the step of forming a 3-plated structure by connecting it to the second plated structure. 2. The method for manufacturing a probe according to claim 1, wherein the third plated structure is a multi-stage type. 3. The method for manufacturing a probe according to claim 1, wherein the third opening is formed in correspondence with an arrangement pattern of electrodes of a measurement object. 4. A contact part having a protruding tip, an arm part extending horizontally from the contact part, and a connecting part extending from the end of the arm part in a direction opposite to the contact part. The probe is characterized in that the connecting portion is connected to a lower contact portion of an intermediate substrate constituting a probe card. 5. The probe according to claim 1, wherein the contact portion is of a multistage type.