JP2003110382A - Microwave semiconductor amplifier - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor microwave amplifier capable of correcting the phase difference between the signals propagating the lines at the center and the both ends of a transistor. SOLUTION: Wires 3 from an input side microstrip line 2 are wired to an input terminal 8 of a cell 10 located at the center of a transistor 4, and the number of wires 3 per unit area at the input terminal 8 of the cell 10 of the transistor 4 is denoted by N1. Similarly, wires 3 from an input side microstrip line 2 are wired to input terminals 8 of cells 10 located at the both ends of the transistor 4, and the number of wires 3 per unit area at the input terminals 8 of the cells 10 of the transistor 4 is denoted by N2 with the wires 3 being wired, so that N1≠N2 is satisfied.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave semiconductor amplifier for terrestrial microwave, millimeter wave communication device, mobile communication device, satellite communication device and the like.

[0002]

2. Description of the Related Art FIG. 13 is a document by Ito and Takagi, "MM.
Fig. 1 is a block diagram of a conventional device of this type, which is shown in "Basics and Applications of IC Technology", Realize Co., Ltd., 1996. In the figure, 1 is an input side substrate to which a main signal is input, and 2 is an input side micro. Strip line, 3 is an input side wire, 4 is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9 is an output terminal, and 10 is a cell forming a transistor. In the conventional wiring method, a straight line is formed according to the end shapes of the microstrip line 2 at the end of the input side substrate 1 on the input terminal 8 side and the end of the output side substrate 7 at the output terminal 9 side. Wires 3 and 5 are wired in a uniform pattern at equal intervals.

Next, the operation will be described. As an input signal, the signal is input to the strip line 2 installed on the input side of the transistor 4. The input signal propagating through the strip line 2 is distributed by the plurality of wires 3 connected to the strip line 2, propagates to the input terminal 8 of the transistor 4, and is amplified by each cell 10 of the transistor 4. The signals amplified by each cell 10 of the transistor 4 are combined by the wire 5 connected to the output side, and the strip line 6 connected to the output side.
Is output as an output signal.

[0004]

The conventional microwave semiconductor amplifier of this type is constructed as described above, but when the signal amplified by the semiconductor amplifier propagates through the microstrip line, it propagates. When the line width of the microstrip line becomes larger than the wavelength of
There is a problem that a phase difference occurs between the signal flowing through the central portion of the microstrip line and the signal flowing toward both ends thereof due to the difference in path length. The above description will be supplemented with reference to FIG. In FIG. 14, it is assumed that a signal is input at point A. The signal propagating from point A is point B or C
The phase of the signal changes on the way to the point. Let φB be the passing phase when the signal propagates between A and B, and φC be the passing phase when the signal propagates between A and C, and the path length from A point to B point and from A point to C point. ΦB ≠
φC, and the phases at points B and C are different. Due to this phase difference, the signals to the cells 10 of the FETs do not become in phase, resulting in gain imbalance in each FET cell,
This causes a problem that the gain of the FET as a whole is lowered.

In the present invention, in order to solve the problem of the phase difference caused by the path length of the microstrip line, the phase difference of the signal propagating through the line is corrected as compared with the conventional semiconductor amplifier using the wire wiring method. It is an object of the present invention to provide a microwave semiconductor amplifier by a wire wiring method that enables the above.

[0006]

In view of the above object, the present invention provides a transistor consisting of a plurality of K cells (K is an integer, K ≧ 3) and a microstrip on both sides of its input terminal and output terminal. A microwave semiconductor amplifier including a plurality of parallel wires for arranging lines and connecting an input terminal and an input side microstrip line, and a plurality of parallel wires connecting an output terminal and an output side microstrip line. In the input side microstrip line, the cell in the center of the transistor (if K is an even number, the K / 2th cell and the K / 2 + 1th cell from the end,
If it is an odd number, the number of wires per unit area at the input terminal of the cell of the transistor wired to the input terminal to (K + 1) / 2nd cell) is set to N1, and from the input side microstrip line, Let N2 be the number of wires per unit area at the input terminals of the cell of the transistor wired to the input terminals to the cells at both ends,
A microwave semiconductor amplifier is characterized in that wires are wired so that N1 ≠ N2.

Also, a transistor consisting of a plurality of K cells (K is an integer, K ≧ 3) and microstrip lines on both sides of its input terminal and output terminal are arranged, and the input terminal and the microstrip line on the input side are arranged. In a microwave semiconductor amplifier composed of a plurality of parallel wires that connect to each other and a plurality of parallel wires that connect the output terminal and the output side microstrip line, from the output side microstrip line to the center of the transistor. Of the transistor wired to the output terminal to a certain cell (near K / 2 cell and K / 2 + 1 cell from the end if K is even, near (K + 1) / 2 cell if odd) The number of wires per unit area at the cell output terminal is N1, and the output terminals from the output side microstrip line to the cells at both ends of the transistor are also the same. The number of wires per unit area at the output terminal of the cell transistor which is wired to N2
In the microwave semiconductor amplifier, the wires are arranged so that N1 ≠ N2.

Further, there is provided a microwave semiconductor amplifier characterized in that both the input side and the output side are provided with a wire wiring configuration in which the number of wires per unit area at each terminal is changed.

Further, a microstrip line is arranged on both sides of a transistor consisting of K cells (K is an integer, K ≧ 3) and its input terminal and output terminal, and the input terminal and the microstrip line on the input side are arranged. In a microwave semiconductor amplifier composed of multiple parallel wires that connect to each other and multiple parallel wires that connect the output terminal and the output-side microstrip line, from the input-side microstrip line to the center of the transistor. Of the wire wired to the input terminal to a certain cell (if K is an even number, the K / 2th cell and K / 2 + 1th cell from the end, and if it is an odd number, (K + 1) / 2th cell is near) Let L1 be the length and L2 be the length of the wire wired from the input side microstrip line to the input terminals to the cells at both ends of the transistor. In a microwave semiconductor amplifier, characterized in that the wire is wired so that.

Also, a transistor consisting of a plurality of K cells (K is an integer, K ≧ 3) and microstrip lines are arranged on both sides of the input terminal and the output terminal, and the input terminal and the microstrip line on the input side are arranged. In a microwave semiconductor amplifier composed of a plurality of parallel wires that connect to each other and a plurality of parallel wires that connect the output terminal and the output side microstrip line, from the output side microstrip line to the center of the transistor. Of the wire wired to the output terminal to a certain cell (K / 2 is near the K / 2th cell and K / 2 + 1st cell from the end if K is even, and (K + 1) / 2th cell is near if it is odd) Let L1 be the length, and L2 be the length of the wire wired from the output side microstrip line to the output terminals to the cells at both ends of the transistor. In a microwave semiconductor amplifier, characterized in that the wire is wired so that.

A microwave semiconductor amplifier is characterized in that the input side and the output side are both provided with a wire wiring configuration in which the lengths of the wires to the respective terminals are changed.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION First, the outline of the present invention will be briefly described. In order to solve the above problems, the microwave semiconductor amplifier according to the present invention utilizes the inductance of the wire connecting the microstrip substrate and the transistor. Hereinafter, the conventional example shown in FIG.
An example of the present invention shown in (B) will be described as an example. In both of FIGS. 15A and 15B, the number of cells forming a transistor is three. FIG. 15 (A),
In (B), 1 is an input substrate, 2 is an input side microstrip line, 3A to 3F are input side wires, 4 is a transistor, 8A to 8C are input terminals of each cell forming the transistor, and 10A to 10C are transistors. It is a cell to be configured. FIG. 15A shows an input terminal 8B of the cell 10B at the central portion of the transistor 4 and an input terminal 8B of the two cells 10A and 10C at both ends of the transistor 4.
The wires connected to A and 8C have the same number of wires per unit area. On the other hand, in FIG. 15B, the number of wires per unit area at the input terminal 8B of the cell 10B in the central portion is twice that of the input terminals 8A and 8C of the cells 10A and 10C at both ends. There is.

When the wires used in FIGS. 15A and 15B have the same length and the same thickness, the inductance per wire is the same. Here, the inductance is L. Here, when each frequency ω is used, the impedance per wire is jωL. Generally, when two wires with impedance jωL are connected in parallel, the combined impedance is jωL / 2, which is half of the case of one wire.

From the above, the transistor 4 shown in FIG.
Comparing the inductance of the wires connected to the input terminals of the cells at both ends with the inductance of the wires connected to the input terminals 8A and 8C of the cells at both ends of the transistor 4 of FIG. Is doubled. The phase difference between the signal propagated to the central portion of the transistor 4 and the signal propagated to both ends can be corrected by the difference in the inductance.

The present invention will be described below according to each embodiment. Embodiment 1. 1 is a block diagram of a microwave semiconductor amplifier according to a first embodiment of the present invention. In FIG.
1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4 is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9 is an output terminal,
Reference numeral 10 is a cell that constitutes a transistor. In the present embodiment, in the parallel wiring of the input side wire 3, the number of wires per unit area connected to the input terminal 8 of the cell 10 at the center of the transistor 4 and the input to the cell 10 at both ends of the transistor 4 Comparing with the number of wires per unit area connected to the terminal 8, the number of wires per unit area in the input terminal 8 is larger in both end portions than in the central portion.

Assuming that the transistor 4 is composed of a plurality of K cells (K is an integer, K ≧ 3), a cell at the center (center) of the transistor 4 is, for example, an end if K is an even number. To the K / 2th cell and the K / 2 + 1th cell or in the vicinity thereof, or the odd number, the (K + 1) / 2th cell or in the vicinity thereof.

Next, the operation will be described. Embodiment 1
According to the wire wiring method, the phase difference between the signals generated at the center of the microstrip line 2 and at both ends thereof at the terminal end of the microstrip line 2 on the input side is
This can be corrected by the difference in inductance caused by the difference in the number of wires 3 per unit area at the input terminal 8 of the cell 10 between the central portion and both ends of the transistor 4.
When the inductance of the wire at both ends is L1 and the inductance of the wire at the center is L2, L1 <L2 due to the difference in the number of wires 3 per unit area. Here, assuming that the passing phase (phase shift amount) of the signal propagating to both ends is φ1, and the phase difference (phase shift amount) of the signal propagating to the central part is φ2, the phase shift amounts of both are φ1> φ2. If so, the phase can be corrected according to the present embodiment.

Embodiment 2. 2 is a configuration diagram of a microwave semiconductor amplifier according to a second embodiment of the present invention. In FIG. 2, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4
Is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9
Is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the output wires 5, the output terminal 9 of the cell 10 in the central portion of the transistor 4 is
When the number of wires per unit area connected to the output terminal 5 is compared with the number of wires per unit area connected to the output terminal 9 to the cell 10 at both ends of the transistor 4, There are more wires per unit area than in the central area.

Next, the operation will be described. Embodiment 2
According to the above wire wiring method, the phase difference between the signals generated at the central portion of the microstrip line 2 and both ends thereof at the terminal end portion of the microstrip line 6 on the input side is
Output terminal 9 of cell 10 at the center and both ends of transistor 4
Can be corrected by the difference in the amount of inductance caused by the difference in the number of wires per unit area.

Embodiment 3. 3 is a block diagram of a microwave semiconductor amplifier according to a third embodiment of the present invention. In FIG. 3, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4
Is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9
Is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the input side wire 3 and the output side wire 5, the number of wires per unit area connected to the input terminal 8 and the output terminal 9 of the cell 10 in the central portion of the transistor 4 Comparing the number of wires per unit area connected to the input terminal 8 and the output terminal 9 to the cell 10 at both ends of each of the both ends of the input side and the output side than the central part There are many wires per unit area.

Next, the operation will be described. Embodiment 3
According to the wire wiring method, the phase difference between the signals generated at the center of the microstrip line 2 and at both ends thereof at the terminal end of the microstrip line 2 on the input side is
More phase difference can be corrected by the difference in the amount of inductance caused by the difference in the number of wires per unit area at the input terminal 8 and the output terminal 9 of the cell between the central portion and both ends of the transistor 4.

Fourth Embodiment 4 is a configuration diagram of a microwave semiconductor amplifier according to a fourth embodiment of the present invention. In FIG. 4, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4
Is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9
Is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the input side wires 3, the number of wires per unit area connected to the input terminal 8 of the cell at the center of the transistor 4 and the input terminals 8 to the cells at both ends of the transistor 4 are connected. Comparing with the number of wires per unit area connected to, the central portion of the input terminal 8 has more wires per unit area than both ends.

Next, the operation will be described. Embodiment 4
According to the wire wiring method, the phase difference between the signals generated at the center of the microstrip line 2 and at both ends thereof at the terminal end of the microstrip line 2 on the input side is
This can be corrected by the difference in inductance caused by the difference in the number of wires per unit area in the input terminal 8 of the cell 10 between the central portion and both ends of the transistor 4. When the inductance of the wire at both ends is L1 and the inductance of the wire at the center is L2, L1> L2 due to the difference in the number of wires per unit area. Here, the passing phase (phase shift amount) of the signal propagating to both ends
Is φ1, and the phase difference (phase shift amount) of signals propagating to the center is φ2
As a result, when the phase shift amounts of both satisfy the relationship of φ1 <φ2, the phase can be corrected by the present embodiment.

Embodiment 5. 5 is a block diagram of a microwave semiconductor amplifier according to a fifth embodiment of the present invention. In FIG. 5, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4
Is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9
Is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the output side wires 5, the number of wires per unit area connected to the output terminal 9 of the cell at the center of the transistor 4 and the output terminals 9 to the cells at both ends of the transistor 4 are connected. When compared with the number of wires per unit area connected to the output terminal 9, the central portion of the output terminal 9 has more wires per unit area than both ends.

Next, the operation will be described. Embodiment 5
According to the wire wiring method, the phase difference between the signals generated at the center of the microstrip line 2 and at both ends thereof at the terminal end of the microstrip line 2 on the input side is
This can be corrected by the difference in the amount of inductance caused by the difference in the number of wires per unit area at the output terminal 9 of the cell between the central part and both ends of the transistor 4.

Sixth Embodiment 6 is a block diagram of a microwave semiconductor amplifier according to a sixth embodiment of the present invention. In FIG. 6, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4
Is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9
Is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the input side wire 3 and the output side wire 5, the number of wires per unit area connected to the input terminal 8 and the output terminal 9 of the cell at the center of the transistor 4 and the number of wires of the transistor 4 Comparing the number of wires per unit area connected to the input terminal 8 and the output terminal 9 to the cells at both ends, the central area of both the input side and output side terminals is larger than the unit area at both ends. There are many wires per hit.

Next, the operation will be described. Sixth Embodiment
According to the wire wiring method, the phase difference between the signals generated at the center of the microstrip line 2 and at both ends thereof at the terminal end of the microstrip line 2 on the input side is
More phase difference can be corrected by the difference in the amount of inductance caused by the difference in the number of wires per unit area at the input terminal 8 and the output terminal 9 of the cell between the central portion and both ends of the transistor 4.

Embodiment 7. 7 is a block diagram of a microwave semiconductor amplifier according to a seventh embodiment of the present invention. In FIG. 7, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4
Is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9
Is an output terminal, and 10 is a cell forming a transistor. In this embodiment, in the parallel wiring of the input side wire 3, the input terminal 8 of the cell 10 in the central portion of the transistor 4 is connected.
When the length of the wire connected to the input terminal 8 to the cell 10 at both ends of the transistor 4 is compared with the length of the wire connected to the input terminal 8, the both ends of the input terminal 8 are longer than the central part. .

Next, the operation will be described. Embodiment 7
According to the wire wiring method, the phase difference between the signals generated at the center of the microstrip line 2 and at both ends thereof at the terminal end of the microstrip line 2 on the input side is
This can be corrected by the difference in the inductance caused by the difference in the wire length at the input terminal 8 of the cell 10 between the central portion and both ends of the transistor 4. When the inductance of the wire at both ends is L1 and the inductance of the wire at the center is L2, L1> L2 due to the difference in wire length. Here, assuming that the passing phase (amount of phase shift) of the signal propagating to both ends is φ1, and the phase difference (amount of phase shift) of the signal propagating to the center is φ2, the amount of phase shift between them is φ1 <φ2.
When the relationship of is satisfied, the phase can be corrected by the present embodiment.

Embodiment 8. 8 is a configuration diagram of a microwave semiconductor amplifier according to an eighth embodiment of the present invention. In FIG. 8, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4
Is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9
Is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the output wires 5, the output terminal 9 of the cell 10 in the central portion of the transistor 4 is
When the length of the wire connected to the output terminal 9 is compared with the length of the wire connected to the output terminal 9 to the cell at both ends of the transistor, the wire at the both ends of the output terminal 9 is longer than that at the center.

Next, the operation will be described. Embodiment 8
According to the wire wiring method, the phase difference between the signals generated at the center of the microstrip line 2 and at both ends thereof at the terminal end of the microstrip line 2 on the input side is
This can be corrected by the difference in the amount of inductance caused by the difference in the wire length at the output terminal 9 of the cell 10 between the central portion and both ends of the transistor 4.

Ninth Embodiment 9 is a block diagram of a microwave semiconductor amplifier according to a ninth embodiment of the present invention. In FIG. 9, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4
Is a transistor, 5 is an output side wire, 6 is an output side microstrip line, 7 is an output side substrate, 8 is an input terminal, 9
Is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the input side wire 3 and the output side wire 5, the length of the wire connected to the input terminal 8 and the output terminal 9 of the cell 10 in the central portion of the transistor 4 and the both ends of the transistor 4 Comparing with the lengths of the wires connected to the input terminal 8 and the output terminal 9 to the cell, both of the input side and output side terminals are longer at both ends than at the center.

Next, the operation will be described. Ninth Embodiment
According to the wire wiring method, the phase difference between the signals generated at the center of the microstrip line 2 and at both ends thereof at the terminal end of the microstrip line 2 on the input side is
A larger phase difference can be corrected by the difference in the amount of inductance caused by the difference in the wire lengths at the input terminal 8 and the output terminal 9 of the cell 10 between the central portion and both ends of the transistor 4.

Embodiment 10. 10 is a block diagram of a microwave semiconductor amplifier according to a tenth embodiment of the present invention. In FIG. 10, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4 is a transistor, 5 is an output side wire, 6 is an output side microstrip line, and 7 is An output side substrate, 8 is an input terminal, 9 is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the input side wire 3, the length of the wire connected to the input terminal 8 of the cell 10 at the central portion of the transistor 4 and the connection to the input terminal 8 to the cell 10 at both ends of the transistor 4 are connected. When compared with the length of the wire, the central portion of the input terminal 8 has a longer wire than both ends.

Next, the operation will be described. Embodiment 1
According to the wiring method of 0 wire, at the terminal end of the microstrip line 2 on the input side, the phase difference of the signal generated between the central part of the microstrip line 2 and its both ends is determined by the central part of the transistor 4 and both ends. Cell input terminal 8
It can be corrected by the difference in inductance caused by the difference in the length of the wires. If the inductance of the wire at both ends is L1 and the inductance of the wire at the center is L2, then due to the difference in wire length,
L1 <L2. Here, the passing phase (phase shift amount) of the signal propagating to both ends is φ1, and the phase difference of the signal propagating to the center is
When the (phase shift amount) is φ2 and both phase shift amounts satisfy the relationship of φ1> φ2, the phase can be corrected according to the present embodiment.

Eleventh Embodiment 11 is a block diagram of a microwave semiconductor amplifier according to an eleventh embodiment of the present invention. In FIG. 11, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4 is a transistor, 5 is an output side wire, 6 is an output side microstrip line, and 7 is An output side substrate, 8 is an input terminal, 9 is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the output side wire 5, the length of the wire connected to the output terminal 9 of the cell 10 in the central portion of the transistor 4 and the output terminal 9 to the cell 10 at both ends of the transistor 4 are connected. When compared with the length of the wire, the central portion of the output terminal 9 has a longer wire than both ends.

Next, the operation will be described. Embodiment 1
According to the wire wiring method of No. 1, at the terminal end of the microstrip line 2 on the input side, the phase difference of the signal generated between the central part of the microstrip line 2 and its both ends is determined by the central part of the transistor 4 and both ends. It can be corrected by the difference in the amount of inductance caused by the difference in the length of the wire at the output terminal 9 of the cell with the section.

Twelfth Embodiment 12 is a block diagram of a microwave semiconductor amplifier according to an eleventh embodiment of the present invention. In FIG. 12, 1 is an input side substrate to which a main signal is input, 2 is an input side microstrip line, 3 is an input side wire, 4 is a transistor, 5 is an output side wire, 6 is an output side microstrip line, and 7 is An output side substrate, 8 is an input terminal, 9 is an output terminal, and 10 is a cell forming a transistor. In the present embodiment, in the parallel wiring of the input side wire 3 and the output side wire 5, the length of the wire connected to the input terminal 8 and the output terminal 9 of the cell 10 in the central portion of the transistor 4 and the both ends of the transistor 4 Comparing the lengths of the wires connected to the input terminal 8 and the output terminal 9 to the cell 10, the wires at the central portion of each of the input side and output side terminals are longer than both ends.

Next, the operation will be described. Embodiment 1
According to the wiring method of the wire No. 2, the phase difference of the signal generated between the central portion of the microstrip line 2 and its both ends at the terminal end of the microstrip line 2 on the input side is determined by the central portion of the transistor 4 and the both ends thereof. A larger phase difference can be corrected by the difference in the amount of inductance caused by the difference in the wire lengths at the input terminal 8 and the output terminal 9 of the cell with the section.

[0040]

As described above, according to the present invention, K pieces are provided.
(K is an integer, K ≧ 3) Transistors consisting of multiple cells and microstrip lines on both sides of the input terminal and output terminal, and a plurality of parallel lines connecting the input terminal and the input side microstrip line In the microwave semiconductor amplifier composed of a plurality of parallel wires connecting the output wire and the output terminal to the microstrip line on the output side, from the input side microstrip line to the cell in the center of the transistor (if K is an even number, For example, if it is an odd number (K +
The number of wires per unit area at the input terminal of the cell of the transistor wired to the input terminal to (1) / the second cell vicinity) is set to N1, and also from the input side microstrip line to both ends of the transistor. A microwave semiconductor amplifier characterized in that wires are laid out so that N1 ≠ N2, where N2 is the number of wires per unit area at a cell input terminal of a transistor wired to an input terminal to a certain cell. Therefore, at the end of the microstrip line on the input side, the phase difference between the signal generated at the center of the microstrip line and at both ends of the microstrip line can be calculated as the unit area at the input terminal of the cell between the center and both ends of the transistor. Can be corrected by the difference in inductance caused by the difference in the number of wires.

Also, a microstrip line is arranged on both sides of a transistor consisting of K cells (K is an integer, K ≧ 3) and its input terminal and output terminal, and the input terminal and the microstrip line on the input side are arranged. In a microwave semiconductor amplifier composed of a plurality of parallel wires that connect to each other and a plurality of parallel wires that connect the output terminal and the output side microstrip line, from the output side microstrip line to the center of the transistor. Of the transistor wired to the output terminal to a certain cell (near K / 2 cell and K / 2 + 1 cell from the end if K is even, near (K + 1) / 2 cell if odd) The number of wires per unit area at the cell output terminal is N1, and the output terminals from the output side microstrip line to the cells at both ends of the transistor are also the same. The number of wires per unit area at the output terminal of the cell transistor which is wired to N2
As described above, since the microwave semiconductor amplifier is characterized in that the wires are wired so that N1 ≠ N2, it occurs at the center part of the microstrip line and both ends thereof at the end part of the microstrip line on the input side. The phase difference between signals can be corrected by the difference in inductance caused by the difference in the number of wires per unit area at the cell output terminals between the central portion and both ends of the transistor.

Further, since the number of wires per unit area at the terminals at the center and both ends of the transistor is changed at the input terminal and the output terminal of the transistor, more phase difference can be corrected. it can.

Further, a microstrip line is arranged on both sides of a transistor composed of a plurality of K cells (K is an integer, K ≧ 3) and its input terminal and output terminal. In a microwave semiconductor amplifier composed of multiple parallel wires that connect to each other and multiple parallel wires that connect the output terminal and the output-side microstrip line, from the input-side microstrip line to the center of the transistor. Of the wire wired to the input terminal to a certain cell (if K is an even number, the K / 2th cell and K / 2 + 1th cell from the end, and if it is an odd number, (K + 1) / 2th cell is near) Let L1 be the length and L2 be the length of the wire wired from the input side microstrip line to the input terminals to the cells at both ends of the transistor. Since the microwave semiconductor amplifier, characterized in that the wire is wired so that,
At the terminal end of the microstrip line on the input side, the phase difference between the signal generated at the center of the microstrip line and its both ends is determined by the difference in the wire length at the cell input terminal between the transistor center and both ends. It can be corrected by the difference in the generated inductance.

Further, a microstrip line is arranged on both sides of a transistor consisting of K cells (K is an integer, K ≧ 3) and its input terminal and output terminal, and the input terminal and the microstrip line on the input side are arranged. In a microwave semiconductor amplifier composed of a plurality of parallel wires that connect to each other and a plurality of parallel wires that connect the output terminal and the output side microstrip line, from the output side microstrip line to the center of the transistor. Of the wire wired to the output terminal to a certain cell (K / 2 is near the K / 2th cell and K / 2 + 1st cell from the end if K is even, and (K + 1) / 2th cell is near if it is odd) Let L1 be the length, and L2 be the length of the wire wired from the output side microstrip line to the output terminals to the cells at both ends of the transistor. Since the microwave semiconductor amplifier, characterized in that the wire is wired so that,
At the end of the microstrip line on the input side, the phase difference of the signal generated at the center of the microstrip line and its both ends is determined by the difference in the wire length at the cell output terminal between the center of the transistor and both ends. It can be corrected by the difference in the generated inductance.

Further, since the lengths of the wires wired to the terminals at the center and both ends of the transistor are changed at the input terminal and the output terminal of the transistor, more phase difference can be corrected. You can

[Brief description of drawings]

FIG. 1 is a configuration diagram of a microwave semiconductor amplifier according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram of a microwave semiconductor amplifier according to a second embodiment of the present invention.

FIG. 3 is a configuration diagram of a microwave semiconductor amplifier according to a third embodiment of the present invention.

FIG. 4 is a configuration diagram of a microwave semiconductor amplifier according to a fourth embodiment of the present invention.

FIG. 5 is a configuration diagram of a microwave semiconductor amplifier according to a fifth embodiment of the present invention.

FIG. 6 is a configuration diagram of a microwave semiconductor amplifier according to a sixth embodiment of the present invention.

FIG. 7 is a configuration diagram of a microwave semiconductor amplifier according to a seventh embodiment of the present invention.

FIG. 8 is a configuration diagram of a microwave semiconductor amplifier according to an eighth embodiment of the present invention.

FIG. 9 is a configuration diagram of a microwave semiconductor amplifier according to a ninth embodiment of the present invention.

FIG. 10 is a configuration diagram of a microwave semiconductor amplifier according to a tenth embodiment of the present invention.

FIG. 11 is a configuration diagram of a microwave semiconductor amplifier according to an eleventh embodiment of the present invention.

FIG. 12 is a configuration diagram of a microwave semiconductor amplifier according to a twelfth embodiment of the present invention.

FIG. 13 is a configuration diagram of a conventional device of this type.

FIG. 14 is a diagram for explaining a conventional problem.

FIG. 15 is a diagram for explaining the outline of the present invention.

[Explanation of symbols]

1 input side substrate, 2 input side microstrip line,
3 input side wires, 4 transistors, 5 output side wires, 6 output side microstrip lines, 7 output side substrates, 8 input terminals, 9 output terminals, 10 cells.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Masatoshi Nakayama             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor, Shuji Ishida             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Yukio Ikeda             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Kenichi Horiguchi             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. F term (reference) 5F044 AA02 AA18 AA19 EE02                 5J067 AA04 CA26 FA16 HA01 HA33                       KA66 KA68 LS12 QA04 QS02                       SA13

Claims (6)

[Claims] 1. A microstrip line on both sides of an input terminal and an output terminal of a transistor consisting of a plurality of K cells (K is an integer, K ≧ 3) and its input terminal and output terminal. In a microwave semiconductor amplifier composed of multiple parallel wires that connect to each other and multiple parallel wires that connect the output terminal to the output-side microstrip line, from the input-side microstrip line to the center of the transistor. A cell (if K is an even number, it is near the K / 2th cell and the K / 2 + 1th cell from the edge, and if it is an odd number, (K + 1) / 2
N1 is the number of wires per unit area at the input terminal of the cell of the transistor wired to the input terminal (near the second cell), and similarly from the input side microstrip line to the cells at both ends of the transistor. A microwave semiconductor amplifier, wherein wires are wired so that N1 ≠ N2, where N2 is the number of wires per unit area at an input terminal of a cell of a transistor wired to an input terminal. 2. A transistor consisting of a plurality of K cells (K is an integer, K ≧ 3) and microstrip lines on both sides of an input terminal and an output terminal thereof, and a microstrip line on the input terminal and the input side. In a microwave semiconductor amplifier composed of multiple parallel wires that connect to each other and multiple parallel wires that connect the output terminal to the output-side microstrip line, connect the output-side microstrip line to the center of the transistor. A cell (if K is an even number, it is near the K / 2th cell and the K / 2 + 1th cell from the edge, and if it is an odd number, (K + 1) / 2
The number of wires per unit area at the output terminal of the cell of the transistor wired to the output terminal to (the vicinity of the first cell) is N1, and similarly from the output side microstrip line to the cells at both ends of the transistor. A microwave semiconductor amplifier, wherein wires are laid out so that N1 ≠ N2, where N2 is the number of wires per unit area at an output terminal of a cell of a transistor wired to an output terminal. 3. A microwave semiconductor amplifier comprising the wire wiring structure according to claim 1 or 2. 4. A transistor consisting of a plurality of K cells (K is an integer, K ≧ 3) and microstrip lines on both sides of its input terminal and output terminal, and a microstrip line on the input terminal and the input side. In a microwave semiconductor amplifier composed of multiple parallel wires that connect to each other and multiple parallel wires that connect the output terminal to the output-side microstrip line, from the input-side microstrip line to the center of the transistor. A cell (if K is an even number, it is near the K / 2th cell and the K / 2 + 1th cell from the edge, and if it is an odd number, (K + 1) / 2
Let L1 be the length of the wire wired to the input terminal to the (near the cell), and let the length of the wire wired from the input side microstrip line to the input terminals to the cells at both ends of the transistor. A microwave semiconductor amplifier, in which a wire is wired so that L1 ≠ L2 as L2. 5. A transistor consisting of a plurality of K cells (K is an integer, K ≧ 3) and microstrip lines on both sides of its input terminal and output terminal, and a microstrip line on the input terminal and the input side. In a microwave semiconductor amplifier composed of multiple parallel wires that connect to each other and multiple parallel wires that connect the output terminal to the output-side microstrip line, connect the output-side microstrip line to the center of the transistor. A cell (if K is an even number, it is near the K / 2th cell and the K / 2 + 1th cell from the edge, and if it is an odd number, (K + 1) / 2
The length of the wire wired to the output terminal to the (near the cell) is L1, and the length of the wire wired from the output side microstrip line to the output terminals to the cells at both ends of the transistor is also set. A microwave semiconductor amplifier, in which a wire is wired so that L1 ≠ L2 as L2. 6. A microwave semiconductor amplifier provided with both the wire wiring structure according to claim 4 and claim 5.