JP2003109771A - Organic electroluminescence device and method of manufacturing the same - Google Patents
Organic electroluminescence device and method of manufacturing the sameInfo
- Publication number
- JP2003109771A JP2003109771A JP2001296583A JP2001296583A JP2003109771A JP 2003109771 A JP2003109771 A JP 2003109771A JP 2001296583 A JP2001296583 A JP 2001296583A JP 2001296583 A JP2001296583 A JP 2001296583A JP 2003109771 A JP2003109771 A JP 2003109771A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- anode
- organic
- insulating layer
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 19
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 94
- 239000010409 thin film Substances 0.000 description 10
- 239000000872 buffer Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000010405 anode material Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- 101000854908 Homo sapiens WD repeat-containing protein 11 Proteins 0.000 description 1
- -1 ITO Chemical compound 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 102100020705 WD repeat-containing protein 11 Human genes 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】
【課題】 発光を陰極側から取り出す場合において、光
取りだし効率の良好な有機エレクトロルミネッセンス素
子及びその製造方法を提供する。
【解決手段】 少なくとも、表面にトランジスタ２が形
成された基板１上に絶縁層３、陽極５、有機ＥＬ層９、
陰極１２を順次積層してなり、絶縁層３にはコンタクト
ホールＣが形成され、このコンタクトホールＣ中に埋め
込まれた金属層を介してトランジスタ２と陽極５が接続
された有機エレクトロルミネッセンス素子において、陽
極５と有機ＥＬ層９との間に酸化ニッケルを設ける。
(57) [Problem] To provide an organic electroluminescence element having good light extraction efficiency when emitting light from the cathode side, and a method of manufacturing the same. SOLUTION: An insulating layer 3, an anode 5, an organic EL layer 9, at least on a substrate 1 having a transistor 2 formed on its surface.
In the organic electroluminescent device in which the cathode 12 is sequentially laminated, the contact hole C is formed in the insulating layer 3, and the transistor 2 and the anode 5 are connected via the metal layer embedded in the contact hole C, Nickel oxide is provided between the anode 5 and the organic EL layer 9.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機エレクトロル
ミネッセンス素子（有機ＥＬ素子）及びその製造方法に
関する。TECHNICAL FIELD The present invention relates to an organic electroluminescence device (organic EL device) and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、高速応答性を有し、視
野角依存性のない光を低消費電力で発光することによ
り、表示素子として、携帯端末機器やパーソナルコンピ
ュータのディスクプレイ等に応用することが検討されて
おり、車載オーディオ用表示パネルには、モノカラーを
部分的に組み合わせたエリアカラー表示素子として実用
化されている。2. Description of the Related Art Organic EL devices have high-speed responsiveness and emit light that does not depend on the viewing angle with low power consumption, and thus are applied as display devices to portable terminals and personal computers such as disc play. It has been studied, and it has been put into practical use as an area color display element in which mono-colors are partially combined in a vehicle-mounted audio display panel.
【０００３】そして、赤（Ｒ）、緑（Ｇ）、青（Ｂ）に
対応した表示素子を組み合わせれば、フルカラー表示が
可能であることから低電圧駆動で高輝度発光する高性能
の有機ＥＬ素子についての検討が種々行われている。ま
た、高精度表示を行うには単純マトリクス駆動よりも優
れたアクティブマトリクス方式が検討されている。By combining display elements corresponding to red (R), green (G), and blue (B), full-color display is possible. Therefore, a high-performance organic EL device that emits light with high brightness at low voltage drive. Various studies have been made on devices. In addition, an active matrix method, which is superior to the simple matrix driving method, is under study for high-precision display.
【０００４】図４は、従来の有機ＥＬ素子の１画素を示
す断面図である。図４に示すように、有機ＥＬ素子は、
各画素がマトリクス状に配置され、この各画素は、表面
に薄膜トランジスタ２が形成されたガラス基板１上に絶
縁層３と、所定の間隔を有した陽極５と、正孔輸送層８
と、電子輸送層兼発光層９と、陰極１２とが順次積層さ
れた構成を有する。FIG. 4 is a sectional view showing one pixel of a conventional organic EL element. As shown in FIG. 4, the organic EL element is
Each pixel is arranged in a matrix, and each pixel has an insulating layer 3 on a glass substrate 1 on which a thin film transistor 2 is formed, an anode 5 having a predetermined space, and a hole transporting layer 8.
The electron transport layer / light emitting layer 9 and the cathode 12 are sequentially laminated.
【０００５】更に、絶縁層３には、コンタクトホールＣ
が形成され、このコンタクトホールＣ中に埋め込まれた
金属層４により薄膜トランジスタ２のソース２２と陽極
５が接続されている。なお、薄膜トランジスタ２は、ド
レイン２１、ソース２２、ゲート２３からなる。このコ
ンタクトホールＣの開口率は、電子輸送層兼発光層９か
らの発光効率を向上させるために極力小さくするように
形成されている。正孔輸送層８と、電子輸送層兼発光層
９とで有機ＥＬ層Ｐを構成している。Further, the insulating layer 3 has a contact hole C
The metal layer 4 embedded in the contact hole C connects the source 22 of the thin film transistor 2 to the anode 5. The thin film transistor 2 includes a drain 21, a source 22 and a gate 23. The aperture ratio of the contact hole C is formed to be as small as possible in order to improve the light emission efficiency from the electron transport layer / light emitting layer 9. The hole-transporting layer 8 and the electron-transporting layer / light-emitting layer 9 form an organic EL layer P.
【０００６】ここで、陽極５は、透明導電性のインジウ
ム−スズ酸化物（以下、ＩＴＯという）からなり、正孔
輸送層８は、アリールジアミン化合物（以下、ＴＰＤと
いう）からなる。電子輸送層兼発光層９は、トリス（８
−キノリノール）アルミニウム有機金属錯体（以下、単
にＡｌｑ３という）からなる。有機ＥＬ層Ｐとしては、
単層型、電荷注入性、電荷輸送性、発光性の機能に応じ
た層からなる積層型等がある。陰極１２は、仕事関数の
小さいＡｇ−Ｍｇ合金膜からなる。The anode 5 is made of transparent conductive indium-tin oxide (hereinafter referred to as ITO), and the hole transport layer 8 is made of aryldiamine compound (hereinafter referred to as TPD). The electron transport layer / light emitting layer 9 is a tris (8
-Quinolinol) aluminum organometallic complex (hereinafter, simply referred to as Alq3). As the organic EL layer P,
There are a single layer type, a layered type including layers corresponding to the functions of charge injection, charge transport, and light emission. The cathode 12 is made of an Ag—Mg alloy film having a small work function.
【０００７】この有機ＥＬ素子は、マトリクス状に配置
された画素における陽極５と陰極１２との間に電圧を印
加して、陽極５からホールを注入し、正孔輸送層８を経
て電子輸送層兼発光層９に輸送する一方、陰極１２から
電子を電子輸送層兼発光層９に注入し、ここで電子とホ
ールとを結合させて発光させ、この発光した光を陽極５
を介してガラス基板１側から外部に取り出すことによっ
て表示を行うものである。この電子輸送層兼発光層９か
ら発せられた光の発光色は、電子輸送層兼発光層９の発
光色に依存し、単色発光であり、電子輸送層兼発光層９
がＡｌｑ３の場合は、緑色発光である。In this organic EL device, a voltage is applied between the anode 5 and the cathode 12 in pixels arranged in a matrix to inject holes from the anode 5, and the electron transport layer is passed through the hole transport layer 8. The electrons are injected from the cathode 12 into the electron-transporting-layer / light-emitting layer 9 while being transported to the dual-light-emitting layer 9, where electrons and holes are combined to emit light, and the emitted light is emitted to the anode 5
Display is performed by taking out from the glass substrate 1 side through the outside. The emission color of the light emitted from the electron transport layer / light emitting layer 9 depends on the emission color of the electron transport layer / light emitting layer 9 and is monochromatic light emission.
Is Alq3, green light is emitted.
【０００８】この場合、ガラス基板１側から発光した光
を取り出す限り、薄膜トランジスタ２の占める割合を小
さくしても、この薄膜トランジスタ２が発光した光を遮
るため、発光効率を低下させる。そして、高精細化のた
めに、画素サイズが小さくなると、発光面積が益々小さ
くなるので、発光効率が低下してしまう。また、安定し
た定電流駆動を行うためには、１画素当たり２〜４個の
薄膜トランジスタ２が必要となる。この対策として、陰
極１２側から発光を取り出すことが考えられた。In this case, as long as the light emitted from the glass substrate 1 side is taken out, even if the proportion of the thin film transistor 2 is reduced, the light emitted by the thin film transistor 2 is blocked, so that the luminous efficiency is lowered. When the pixel size becomes smaller for higher definition, the light emitting area becomes smaller and smaller, so that the light emitting efficiency is lowered. Further, in order to perform stable constant current driving, 2 to 4 thin film transistors 2 are required per pixel. As a countermeasure against this, it has been considered to take out light emission from the cathode 12 side.
【０００９】この場合、陽極５を金属電極にし、陰極１
２を透明電極にすることが考えられる。陰極１２は、透
明かつ抵抗値が低くなるための条件で成膜する必要があ
るが、この条件を満たすものとして、スパッタリング方
法によりＩＴＯを成膜することが一般的である。ところ
が、このＩＴＯを有機ＥＬ層Ｐ上に成膜すると、堆積粒
子及び成膜時のプラズマの影響により、有機ＥＬ層Ｐへ
のダメージが大きく加わるため、動作時に発光しなくな
ってしまう。この問題を解決する方法として、陰極１２
を透明率がある程度得られる薄さにする方法がＡｐｐ
ｌ．Ｐｈｙｓ．Ｌｅｔｔ．６８，ｐ２６０６等に開示さ
れている。In this case, the anode 5 is a metal electrode and the cathode 1
It is conceivable that 2 is a transparent electrode. The cathode 12 needs to be formed under the condition that the cathode 12 is transparent and has a low resistance value. However, if the condition is satisfied, it is common to form ITO by a sputtering method. However, when this ITO film is formed on the organic EL layer P, the organic EL layer P is greatly damaged due to the influence of deposited particles and plasma at the time of film formation, so that light emission is stopped during operation. As a method of solving this problem, the cathode 12
App is a method to reduce the thickness to obtain a certain degree of transparency
l. Phys. Lett. 68, p2606 and the like.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、陽極材
料としてＩＴＯを用いており、光取り出し効率が悪かっ
た。このＩＴＯの代わりに、仕事関数が大きく、反射率
も高い金、ニッケル等の材料を用いることが考えられた
が、前記したように発光を効率的に取り出すためにコン
タクトホールＣが極力小さくなるように形成されている
ので、通常のスパッタリング法や蒸着法等では、コンタ
クトホールＣ内部に金属層４が良好なステップカバレー
ジで成膜されず、陽極５と金属層４とのコンタクト抵抗
が高くなり、低電圧駆動ができないといった問題を生じ
ていた。However, since ITO is used as the anode material, the light extraction efficiency is poor. It has been considered to use a material such as gold or nickel having a large work function and a high reflectance in place of this ITO, but as described above, the contact hole C is made as small as possible in order to efficiently take out light emission. Therefore, the metal layer 4 is not formed inside the contact hole C with a good step coverage by the usual sputtering method or vapor deposition method, and the contact resistance between the anode 5 and the metal layer 4 increases. There was a problem that low voltage drive was not possible.
【００１１】このため、コンタクトホールＣ内部に形成
する金属層４をＣＶＤ法（Ｃｈｅｍｉｃａｌ Ｖａｐｏ
ｕｒ Ｄｅｐｏｓｉｔｉｏｎ法）やリフロー工程で行う
ことが望ましいが、前記した金属材料では困難であっ
た。Therefore, the metal layer 4 formed inside the contact hole C is formed by the CVD method (Chemical Vapo).
ur Deposition method) or a reflow process is preferable, but it is difficult with the above metal materials.
【００１２】そこで、本発明は、上記のような問題点を
解消するためになされたもので、発光を陰極側から取り
出す場合において、低電圧駆動が可能で、かつ光取りだ
し効率の良好な有機エレクトロルミネッセンス素子及び
その製造方法を提供することを目的とする。Therefore, the present invention has been made in order to solve the above-mentioned problems, and in the case of taking out light emission from the cathode side, it is possible to drive at a low voltage and to have good light extraction efficiency. It is an object of the present invention to provide a luminescence element and a method for manufacturing the same.
【００１３】[0013]
【課題を解決するための手段】本発明の第１の発明は、
少なくとも、表面にトランジスタが形成された基板上に
絶縁層、陽極、有機ＥＬ層、陰極を順次積層してなり、
前記絶縁層にはコンタクトホールが形成され、このコン
タクトホール中に埋め込まれた金属層を介して前記トラ
ンジスタと前記陽極が接続された有機エレクトロルミネ
ッセンス素子において、前記陽極と前記有機ＥＬ層との
間に酸化ニッケルを設けたことを特徴とする有機エレク
トロルミネッセンス素子を提供する。第２の発明は、表
面にトランジスタが形成された基板上に絶縁層を形成し
た後、この絶縁層中にコンタクトホールを形成し、引き
続いて、ＣＶＤ法又はリフロー工程によりＡｌを堆積さ
せた後、前記絶縁層が露出するまで平坦化して前記コン
タクトホール中にＡｌを埋め込んで前記トランジスタに
接触させ、次に、前記絶縁層上に金属からなる陽極を形
成すると共に前記Ａｌを介して前記トランジスタと接続
し、次に、前記陽極上にＲＦスパッタリング方法により
酸化ニッケルを形成し、更に、有機ＥＬ層、陰極を順次
積層したことを特徴とする有機エレクトロルミネッセン
ス素子の製造方法を提供する。第３の発明は、表面にト
ランジスタが形成された基板上に絶縁層を形成した後、
コンタクトホールを形成し、引き続いて、ＣＶＤ法又は
リフロー工程によりＡｌを堆積させた後、前記絶縁層が
露出するまで平坦化して前記コンタクトホール中にＡｌ
を埋め込んで前記トランジスタに接触させ、次に、前記
絶縁層上に金属からなる陽極を形成すると共に前記Ａｌ
を介して前記トランジスタと接続し、次に、前記陽極上
に金属ニッケルを形成して、この金属ニッケルを酸素プ
ラズマ処理して酸化ニッケルを形成し、更に、有機ＥＬ
層、陰極を順次積層したことを特徴とする有機エレクト
ロルミネッセンス素子の製造方法を提供する。The first invention of the present invention is as follows:
At least an insulating layer, an anode, an organic EL layer, and a cathode are sequentially laminated on a substrate having a transistor formed on the surface,
A contact hole is formed in the insulating layer, and in the organic electroluminescence element in which the transistor and the anode are connected to each other through a metal layer embedded in the contact hole, between the anode and the organic EL layer. Provided is an organic electroluminescence device, which is provided with nickel oxide. A second invention is to form an insulating layer on a substrate having a transistor formed on the surface thereof, form a contact hole in the insulating layer, and subsequently deposit Al by a CVD method or a reflow process. The insulating layer is flattened until it is exposed, Al is buried in the contact hole to contact the transistor, and then an anode made of metal is formed on the insulating layer and connected to the transistor through the Al. Then, there is provided a method for manufacturing an organic electroluminescence device, characterized in that nickel oxide is formed on the anode by an RF sputtering method, and an organic EL layer and a cathode are sequentially laminated. A third invention is to form an insulating layer on a substrate on which a transistor is formed,
After forming a contact hole and subsequently depositing Al by a CVD method or a reflow process, the contact layer is flattened until the insulating layer is exposed and Al is deposited in the contact hole.
And contacting the transistor, and then forming an anode made of metal on the insulating layer and forming the Al
Connected to the transistor through the above, and then metal nickel is formed on the anode, and this metal nickel is subjected to oxygen plasma treatment to form nickel oxide.
Provided is a method for manufacturing an organic electroluminescence device, which comprises laminating layers and a cathode in order.
【００１４】[0014]
【発明の実施の形態】本発明の実施形態の有機エレクト
ロルミネッセンス素子及びその製造方法について図１〜
図３を参照しながら以下に説明する。図１は、本発明の
第１実施形態の有機エレクトロルミネッセンス素子を示
す断面図である。図２は、本発明の第１実施形態の有機
エレクトロルミネッセンス素子の陽極材料の種類を変化
させた場合の電流電圧特性を示す図である。図３は、本
発明の第２実施形態の有機エレクトロルミネッセンス素
子を示す断面図である。従来例と同一構成には同一符号
を付し、その説明を省略する。BEST MODE FOR CARRYING OUT THE INVENTION An organic electroluminescence device according to an embodiment of the present invention and a method for manufacturing the same will be described with reference to FIGS.
This will be described below with reference to FIG. FIG. 1 is a cross-sectional view showing an organic electroluminescent element according to the first embodiment of the present invention. FIG. 2 is a diagram showing current-voltage characteristics when the kind of the anode material of the organic electroluminescent element of the first embodiment of the present invention is changed. FIG. 3 is a cross-sectional view showing the organic electroluminescent element of the second embodiment of the present invention. The same components as those of the conventional example are designated by the same reference numerals, and the description thereof will be omitted.
【００１５】図１に示すように、本発明の第１実施形態
の有機エレクトロルミネッセンス素子は、従来の有機エ
レクトロルミネッセンス素子において、陽極５にＡｌを
用い、この陽極５上に酸化ニッケルからなるバッファ層
７が形成され、更に陰極１２がＬｉＦ層１０とＡｌ層１
１とからなるものであり、それ以外は同様である。As shown in FIG. 1, the organic electroluminescence device according to the first embodiment of the present invention is the same as the conventional organic electroluminescence device, except that Al is used for the anode 5 and a buffer layer made of nickel oxide is formed on the anode 5. 7 is formed, and further the cathode 12 is the LiF layer 10 and the Al layer 1
1 and is the same as the others.
【００１６】次に、本発明の第１実施形態の有機エレク
トロルミネッセンス素子の製造方法について説明する。
予め表面に薄膜トランジスタ２が形成されたガラス基板
１上にＳｉＯ2からなる絶縁層３を形成した後、平坦化
する。この絶縁層３中にあって、薄膜トランジスタ２の
ソース２２上にコンタクトホールＣを形成した後、引き
続いてＡｌをＣＶＤ法やリフロー工程により堆積し、こ
のＡｌを絶縁層３が露出するまで平坦化してコンタクト
ホールＣ中にＡｌからなる金属層４を形成する。Next, a method of manufacturing the organic electroluminescent element according to the first embodiment of the present invention will be described.
After forming the insulating layer 3 made of SiO 2 in advance surface to the thin film transistor 2 is formed on a glass substrate 1 which is formed, it is planarized. After forming a contact hole C on the source 22 of the thin film transistor 2 in the insulating layer 3, Al is subsequently deposited by a CVD method or a reflow process, and the Al is flattened until the insulating layer 3 is exposed. A metal layer 4 made of Al is formed in the contact hole C.
【００１７】次に、絶縁層３及び金属層４上にパターン
化した陽極５を形成して、薄膜トランジスタ２のソース
２２と陽極５とを金属層４を介して接続する。更に、絶
縁層３及び陽極５上にＳｉＯ2を形成した後、陽極５が
露出するまで平坦化して画素間に絶縁層６を形成する。Next, a patterned anode 5 is formed on the insulating layer 3 and the metal layer 4, and the source 22 of the thin film transistor 2 and the anode 5 are connected via the metal layer 4. Further, after SiO 2 is formed on the insulating layer 3 and the anode 5, the insulating layer 6 is formed between the pixels by flattening until the anode 5 is exposed.
【００１８】次に、ＲＦスパッタリング法により、陽極
５上に酸化ニッケルをスパッタしてバッファ層７を形成
する。更に、厚さ５０ｎｍのαーＮＰＤからなる正孔輸
送層８、厚さ５０ｎｍのＡｌｑ３の電子輸送層兼発光層
９、ＬｉＦ層１０、厚さ１０ｎｍのＡｌ層１１を順次形
成して有機ＥＬ素子を作製する。なお、ＬｉＦ層１０と
Ａｌ層１１とで陰極１２を構成する。また、前記したよ
うに、正孔輸送層８と電子輸送層兼発光層９とで有機Ｅ
Ｌ層Ｐを構成する。Next, nickel oxide is sputtered on the anode 5 by the RF sputtering method to form the buffer layer 7. Further, a hole transporting layer 8 made of α-NPD having a thickness of 50 nm, an electron transporting layer / light emitting layer 9 of Alq3 having a thickness of 50 nm, a LiF layer 10, and an Al layer 11 having a thickness of 10 nm are sequentially formed to form an organic EL device. To make. The LiF layer 10 and the Al layer 11 form the cathode 12. As described above, the hole transport layer 8 and the electron transport layer / light emitting layer 9 together form the organic E
The L layer P is formed.
【００１９】ここで、本発明の第１実施形態におけるバ
ッファ層７を酸化ニッケル、ＩＴＯ、金属ニッケル、Ｐ
ｔ（白金）にした場合の駆動する電流電圧特性について
調べた。その結果を図２に示す。図２中、□は、酸化ニ
ッケル、△は、ＩＴＯ、△は、金属ニッケル、〇は、Ｐ
ｔを示す。図２に示すように、金属ニッケル及びＩＴＯ
の場合は、駆動する電圧が高く抵抗が高い。一方、酸化
ニッケル及びＩＴＯの場合には、駆動する電圧が低く抵
抗が低く良好な電流電圧特性が得られている。Here, the buffer layer 7 in the first embodiment of the present invention is formed of nickel oxide, ITO, metallic nickel, P.
The driving current-voltage characteristics when t (platinum) was used were examined. The result is shown in FIG. In FIG. 2, □ is nickel oxide, Δ is ITO, Δ is metallic nickel, and ◯ is P.
indicates t. As shown in FIG. 2, metallic nickel and ITO
In the case of, the driving voltage is high and the resistance is high. On the other hand, in the case of nickel oxide and ITO, the driving voltage is low, the resistance is low, and good current-voltage characteristics are obtained.
【００２０】更に、酸化ニッケル及びＩＴＯの場合につ
いて、陰極１２側からの光取り出し効率を調べた。その
結果、酸化ニッケルの場合には、３ｃｄ／Ａであり、Ｉ
ＴＯの場合には、０．５ｃｄ／Ａであった。以上のこと
から、バッファ層７として、酸化ニッケルを用いれば、
低電圧駆動で、かつ光取り出し効率が向上することがわ
かった。なお、バッファ層７に酸化ニッケルを用いた場
合のＡｌの反射率を調べた結果、ニッケルや金と比較し
て２％程度の低下であった。Further, in the case of nickel oxide and ITO, the light extraction efficiency from the cathode 12 side was examined. As a result, in the case of nickel oxide, it was 3 cd / A, and I
In the case of TO, it was 0.5 cd / A. From the above, if nickel oxide is used as the buffer layer 7,
It was found that the light extraction efficiency was improved with low voltage driving. As a result of examining the reflectance of Al when nickel oxide was used for the buffer layer 7, it was about 2% lower than that of nickel or gold.
【００２１】以上のように、本発明の第１実施形態の有
機ＥＬ素子によれば、陽極５上にバッファ層７を形成し
たので、低電圧駆動、かつ高い光取り出し効率を得るこ
とができる。また、その製造方法によれば、ＣＶＤ法や
リフローによりコンタクトホールＣ中にＡｌをＣＶＤ法
やリフロー工程により形成するので、陽極３とＡｌとの
コンタクト抵抗が低くなり、低電圧駆動が可能となる。As described above, according to the organic EL element of the first embodiment of the present invention, since the buffer layer 7 is formed on the anode 5, low voltage driving and high light extraction efficiency can be obtained. Further, according to the manufacturing method, since Al is formed in the contact hole C by the CVD method or the reflow step by the CVD method or the reflow method, the contact resistance between the anode 3 and the Al becomes low, and the low voltage driving becomes possible. .
【００２２】次に、本発明の第２実施形態について図３
を用いて説明する。本発明の第１実施形態と同一構成に
は同一符号を付し、その説明を省略する。図３に示すよ
うに、本発明の第２実施形態の有機ＥＬ素子は、本発明
の第１実施形態の有機ＥＬ素子において、陰極１２の構
成をＬｉＦ層１０、Ａｌ層１１、Ａｕ層１３を順次積層
したものであり、それ以外は同様である。Next, the second embodiment of the present invention will be described with reference to FIG.
Will be explained. The same components as those of the first embodiment of the present invention are designated by the same reference numerals and the description thereof will be omitted. As shown in FIG. 3, the organic EL device of the second embodiment of the present invention is the same as the organic EL device of the first embodiment of the present invention except that the cathode 12 has a LiF layer 10, an Al layer 11, and an Au layer 13. The layers are sequentially laminated, and the others are the same.
【００２３】また、本発明の第２実施形態の有機ＥＬ素
子の製造方法は、本発明の第１実施形態の有機ＥＬ素子
の製造方法におけるバッファ層７を構成する酸化ニッケ
ルをＲＦスパッタリング法により形成する代わりに、陽
極５上に金属ニッケルを形成した後、酸素プラズマ処理
を行って、酸化ニッケルを形成すること及び陰極１２の
構成であるＬｉＦ層１０、Ａｌ層１１の代わりに、Ｌｉ
Ｆ層１０、Ａｌ層１１、Ａｕ層１３を順次積層したこと
が異なり、それ以外は同様である。前記した酸素プラズ
マ処理は、例えば、１０ｍＴｏｒｒ、１００Ｗの条件の
下で４分間の酸素プラズマ中で行うものである。Further, in the method of manufacturing the organic EL element of the second embodiment of the present invention, nickel oxide forming the buffer layer 7 in the method of manufacturing the organic EL element of the first embodiment of the present invention is formed by the RF sputtering method. Instead of forming metallic nickel on the anode 5, an oxygen plasma treatment is performed to form nickel oxide, and instead of the LiF layer 10 and the Al layer 11 which are the constituents of the cathode 12, Li is used.
The F layer 10, the Al layer 11, and the Au layer 13 are different in that they are sequentially stacked, and the other points are the same. The above-mentioned oxygen plasma treatment is performed in oxygen plasma for 4 minutes under the conditions of 10 mTorr and 100 W, for example.
【００２４】本発明の第２実施形態の有機ＥＬ素子の製
造方法によっても、本発明の第１実施形態と同様な効果
が得られる。なお、本発明の第１及び第２実施形態で
は、ガラス基板１を用いたが、不透明な材料を用いるこ
ともできる。The same effect as that of the first embodiment of the present invention can be obtained by the method of manufacturing the organic EL element of the second embodiment of the present invention. Although the glass substrate 1 is used in the first and second embodiments of the present invention, an opaque material can also be used.
【００２５】[0025]
【発明の効果】本発明の有機エレクトロルミネッセンス
素子によれば、陽極と有機ＥＬ層との間に酸化ニッケル
を設けたので、低電圧駆動で、かつ光取り出し効率を向
上させることができる。また、本発明の有機エレクトロ
ルミネッセンス素子の製造方法によれば、コンタクトホ
ール中にＡｌをＣＶＤ法又はリフロー工程により形成す
るので、陽極とＡｌとのコンタクト抵抗が低くなり、低
電圧駆動が可能となる。According to the organic electroluminescent element of the present invention, nickel oxide is provided between the anode and the organic EL layer, so that it can be driven at a low voltage and the light extraction efficiency can be improved. Further, according to the method for manufacturing an organic electroluminescence element of the present invention, Al is formed in the contact hole by the CVD method or the reflow process, so that the contact resistance between the anode and Al becomes low and low voltage driving becomes possible. .
【図１】本発明の第１実施形態の有機エレクトロルミネ
ッセンス素子を示す断面図である。FIG. 1 is a cross-sectional view showing an organic electroluminescent element according to a first embodiment of the present invention.
【図２】本発明の第１実施形態の有機エレクトロルミネ
ッセンス素子の陽極材料の種類を変化させた場合の電流
電圧特性を示す図である。FIG. 2 is a diagram showing current-voltage characteristics when the type of anode material of the organic electroluminescence element of the first embodiment of the present invention is changed.
【図３】本発明の第２実施形態の有機エレクトロルミネ
ッセンス素子を示す断面図である。FIG. 3 is a cross-sectional view showing an organic electroluminescent element of a second embodiment of the present invention.
【図４】従来の有機エレクトロルミネッセンス素子を示
す断面図である。FIG. 4 is a sectional view showing a conventional organic electroluminescence element.
１…ガラス基板、２…薄膜トランジスタ、３、６…絶縁
層、４…金属層、５…陽極、７…バッファ層、８…正孔
輸送層、９…電子輸送層兼発光層、１０…ＬｉＦ層、１
１…Ａｌ層、１２…陰極、Ｃ…コンタクトホール、Ｐ…
有機ＥＬ層DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... Thin film transistor, 3, 6 ... Insulating layer, 4 ... Metal layer, 5 ... Anode, 7 ... Buffer layer, 8 ... Hole transport layer, 9 ... Electron transport layer and light emitting layer, 10 ... LiF layer 1
1 ... Al layer, 12 ... Cathode, C ... Contact hole, P ...
Organic EL layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｂ 33/14 Ｈ０５Ｂ 33/14 Ａ 33/24 33/24 33/28 33/28 Ｆターム(参考） 3K007 AB02 AB06 AB18 BA00 BA06 BB07 CB03 CB04 CC01 DA01 DB03 EB00 FA01 5C094 AA10 AA24 AA43 BA03 BA27 CA19 DA13 DB01 DB04 EA04 EA06 FA01 FA02 FB01 FB02 FB20 GB10 5G435 AA03 AA16 AA17 BB05 CC09 HH01 HH12 HH14 HH20 KK05─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H05B 33/14 H05B 33/14 A 33/24 33/24 33/28 33/28 F term (reference) 3K007 AB02 AB06 AB18 BA00 BA06 BB07 CB03 CB04 CC01 DA01 DB03 EB00 FA01 5C094 AA10 AA24 AA43 BA03 BA27 CA19 DA13 DB01 DB04 EA04 EA06 FA01 FA02 FB01 FB02 FB20 GB10 5G435 AA03 AA16 AA17 BB05 CC12 HH14 H12
Claims (3)
れた基板上に絶縁層、陽極、有機ＥＬ層、陰極を順次積
層してなり、前記絶縁層にはコンタクトホールが形成さ
れ、このコンタクトホール中に埋め込まれた金属層を介
して前記トランジスタと前記陽極が接続された有機エレ
クトロルミネッセンス素子において、 前記陽極と前記有機ＥＬ層との間に酸化ニッケルを設け
たことを特徴とする有機エレクトロルミネッセンス素
子。1. An insulating layer, an anode, an organic EL layer, and a cathode are sequentially laminated on a substrate having a transistor formed on the surface thereof, and a contact hole is formed in the insulating layer. An organic electroluminescence element in which the transistor and the anode are connected via an embedded metal layer, wherein nickel oxide is provided between the anode and the organic EL layer.
絶縁層を形成した後、この絶縁層中にコンタクトホール
を形成し、引き続いて、ＣＶＤ法又はリフロー工程によ
りＡｌを堆積させた後、前記絶縁層が露出するまで平坦
化して前記コンタクトホール中にＡｌを埋め込んで前記
トランジスタに接触させ、次に、前記絶縁層上に金属か
らなる陽極を形成すると共に前記Ａｌを介して前記トラ
ンジスタと接続し、次に、前記陽極上にＲＦスパッタリ
ング方法により酸化ニッケルを形成し、更に、有機ＥＬ
層、陰極を順次積層したことを特徴とする有機エレクト
ロルミネッセンス素子の製造方法。2. An insulating layer is formed on a substrate having a transistor formed on the surface thereof, a contact hole is formed in the insulating layer, and subsequently, Al is deposited by a CVD method or a reflow step. The insulating layer is flattened until it is exposed and Al is embedded in the contact hole to make contact with the transistor, and then an anode made of metal is formed on the insulating layer and connected to the transistor through the Al. Next, nickel oxide is formed on the anode by the RF sputtering method, and further, organic EL
A method for manufacturing an organic electroluminescence device, which comprises laminating layers and a cathode in order.
絶縁層を形成した後、コンタクトホールを形成し、引き
続いて、ＣＶＤ法又はリフロー工程によりＡｌを堆積さ
せた後、前記絶縁層が露出するまで平坦化して前記コン
タクトホール中にＡｌを埋め込んで前記トランジスタに
接触させ、次に、前記絶縁層上に金属からなる陽極を形
成すると共に前記Ａｌを介して前記トランジスタと接続
し、次に、前記陽極上に金属ニッケルを形成して、この
金属ニッケルを酸素プラズマ処理して酸化ニッケルを形
成し、更に、有機ＥＬ層、陰極を順次積層したことを特
徴とする有機エレクトロルミネッセンス素子の製造方
法。3. An insulating layer is formed on a substrate on which a transistor is formed, a contact hole is formed, and subsequently, Al is deposited by a CVD method or a reflow process, and then the insulating layer is exposed. Planarized to fill the contact hole with Al and contact the transistor, then form an anode made of metal on the insulating layer and connect to the transistor through the Al, and then A method for manufacturing an organic electroluminescence device, comprising forming metallic nickel on an anode, subjecting the metallic nickel to oxygen plasma treatment to form nickel oxide, and further laminating an organic EL layer and a cathode in this order.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001296583A JP2003109771A (en) | 2001-09-27 | 2001-09-27 | Organic electroluminescence device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001296583A JP2003109771A (en) | 2001-09-27 | 2001-09-27 | Organic electroluminescence device and method of manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003109771A true JP2003109771A (en) | 2003-04-11 |
Family
ID=19117794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001296583A Pending JP2003109771A (en) | 2001-09-27 | 2001-09-27 | Organic electroluminescence device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003109771A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005203728A (en) * | 2003-08-19 | 2005-07-28 | Seiko Epson Corp | Electrode, electrode forming method, thin film transistor, electronic circuit, organic electroluminescence element, display device, and electronic apparatus |
| KR100739579B1 (en) | 2005-12-09 | 2007-07-16 | 삼성에스디아이 주식회사 | OLED display and manufacturing method thereof |
| US7414362B2 (en) | 2004-07-02 | 2008-08-19 | Samsung Electronics Co., Ltd. | Display panel |
| JP2008205254A (en) * | 2007-02-21 | 2008-09-04 | Toyota Central R&D Labs Inc | Organic electroluminescence device |
| JP5543441B2 (en) * | 2010-06-28 | 2014-07-09 | パナソニック株式会社 | ORGANIC LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD, ORGANIC DISPLAY PANEL, ORGANIC DISPLAY DEVICE |
-
2001
- 2001-09-27 JP JP2001296583A patent/JP2003109771A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005203728A (en) * | 2003-08-19 | 2005-07-28 | Seiko Epson Corp | Electrode, electrode forming method, thin film transistor, electronic circuit, organic electroluminescence element, display device, and electronic apparatus |
| US7414362B2 (en) | 2004-07-02 | 2008-08-19 | Samsung Electronics Co., Ltd. | Display panel |
| KR100739579B1 (en) | 2005-12-09 | 2007-07-16 | 삼성에스디아이 주식회사 | OLED display and manufacturing method thereof |
| JP2008205254A (en) * | 2007-02-21 | 2008-09-04 | Toyota Central R&D Labs Inc | Organic electroluminescence device |
| JP5543441B2 (en) * | 2010-06-28 | 2014-07-09 | パナソニック株式会社 | ORGANIC LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD, ORGANIC DISPLAY PANEL, ORGANIC DISPLAY DEVICE |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7629743B2 (en) | Organic light-emitting display device | |
| JP4382381B2 (en) | Organic electroluminescence device | |
| JP3249297B2 (en) | Organic electroluminescent device | |
| US20100164842A1 (en) | Organic luminescent display device | |
| JP2010199093A (en) | Light emitting device | |
| JPH0963771A (en) | Organic thin-film light emitting device | |
| CN100440573C (en) | Display device and manufacturing method thereof | |
| WO2006132226A1 (en) | Organic el element, organic el display device, and process for producing organic el element | |
| JP2002246185A (en) | Organic electroluminescent device | |
| US7061175B2 (en) | Efficiency transparent cathode | |
| JP2004282066A (en) | Thin film transistor and flat panel display device having the same | |
| KR100844788B1 (en) | Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method | |
| JP2000068073A (en) | Organic electroluminescence device and method of manufacturing the same | |
| JP3143362B2 (en) | Organic electroluminescence device | |
| JP2003272867A (en) | Light-emitting element and active matrix display | |
| JP2002260858A (en) | Light emitting device and manufacturing method thereof | |
| JP2003109771A (en) | Organic electroluminescence device and method of manufacturing the same | |
| US20060279206A1 (en) | Organic el element, organic el display using same and manufacturing method for organic el element | |
| US20060220535A1 (en) | Organic electroluminescent element and display device | |
| CN1322600C (en) | Optical element and its making method | |
| JP2004227943A (en) | Organic EL light emitting device and method of manufacturing the same | |
| KR101744874B1 (en) | Organic light emitting diodes | |
| JP2002170688A (en) | Organic electroluminescent element | |
| JP2002184585A (en) | Organic electroluminescent element | |
| JP2002260865A (en) | Organic electroluminescence element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060207 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060224 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070828 |