JP2003101380A - Surface acoustic wave device and method of manufacturing the same - Google Patents

Abstract

(57) [Summary] (with correction) [PROBLEMS] To provide a highly reliable surface acoustic wave device while protecting a functional part and reducing the size and weight. SOLUTION: A frame-shaped first insulating film 2a provided so as to surround a functional portion 1a on a chip 1, and a predetermined insulating material is mounted between the first insulating film 2a and the functional portion 1a. A surface acoustic wave element having a space and having a cover-like second insulating film 2b covering the excitation electrode of the functional part and the surface acoustic wave propagation path is mounted on the circuit board.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device used as a high frequency resonator in telecommunications equipment and the like, and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 10 is a side sectional view showing a conventional surface acoustic wave device. In this figure, reference numeral 1 denotes a piezoelectric substrate (hereinafter referred to as a chip) which constitutes a surface acoustic wave element,
On one main surface (upper surface in the drawing) of the chip 1, a well-known interdigital transfer (Interdigital Trans)
(hereinafter referred to as IDT)), and a surface acoustic wave functional unit 1a having a propagation path of a surface wave excited in a predetermined direction on the chip surface by the excitation electrode.
Also, an electrode pad (not shown) extending from the excitation electrode and serving as a connection terminal to the outside of the functional unit is formed. Reference numeral 12 is a package for holding the chip, and 12a and 12b are peripheral wall portions of the package which are provided so as to surround the chip and form a housing portion of the chip.
A terminal portion 12c serving as a connection portion to the outside is formed on a part of the. Reference numeral 4 is a wire for electrically connecting the electrode pad of the functional portion 1a and the terminal portion 12c.

Reference numeral 11 denotes a metal cover which is joined to a sealing portion 12d provided on the upper surface of the package peripheral wall portion 12b to hermetically seal and protect the functional portion 1a of the chip 1. Since the surface acoustic wave device elastically opens the surface wave excited by the well-known IDT and its propagation path, in order to secure a hollow portion in the surface portion of the functional portion 1a and prevent damage to the functional portion 1a. Protection measures are required.

FIG. 11 shows, for example, Japanese Patent Laid-Open No. 4-3019.
FIG. 11 is a side sectional view showing another conventional surface acoustic wave device shown in Japanese Patent Laid-Open No. 10-34. 11, parts that are the same as or correspond to those in FIG. 10 are given the same reference numerals, and descriptions thereof will be omitted. In the device shown in this figure, the functional portion 1a is provided on the lower surface of the chip 1, and a hollow portion is formed in the opposing portion between the functional portion 1a and the package 12. The bump electrode 6 connects the functional portion 1a and the terminal portion 12c. That is, the bump electrode 6 formed on the electrode pad (not shown) of the chip 1 is electrically connected to the terminal portion 12c. The package peripheral wall portion 12a also contributes to secure the hollow portion 9 by forming a step in a portion facing the functional portion 1a,
As a result, the functional portion 1a is protected and a void is secured in the surface portion thereof. Further, the metal cover 11 is similar to that of FIG. 10 in that the opening of the package 12 is hermetically sealed on the upper surface side of the chip 1 via the sealing portion 12d.

[0005]

The conventional surface acoustic wave device is constructed as described above, and the cover 1 made of metal is hermetically sealed.
1 is used, this means that when it is attempted to cover the periphery of the chip 1 with an insulating resin or the like as a means for manufacturing at a lower cost, the resin adheres to the chip 1 and functions. This is because it becomes impossible to secure a hollow portion on the surface of the portion 1a, but the hermetic sealing with the metal cover has a problem that the manufacturing cost becomes high.

The present invention has been made in order to solve the above-mentioned problems, and secures a hollow portion on the surface of the functional portion of the surface acoustic wave device to prevent the functional portion from being damaged and to reduce the size and weight. It is an object of the present invention to obtain a highly reliable surface acoustic wave device. Another object of the present invention is to provide a method for manufacturing a surface acoustic wave device, which can reduce the manufacturing cost by simplifying the manufacturing process and improving the accuracy while increasing the productivity.

[0007]

A surface acoustic wave device according to the present invention is formed on a piezoelectric substrate and one main surface of the piezoelectric substrate, and generates a surface wave in a predetermined direction on the surface of the piezoelectric substrate. A functional portion having an exciting electrode for exciting, a frame-shaped first insulating film provided on one main surface of the piezoelectric substrate so as to surround the functional portion, and attached to the first insulating film. A surface acoustic wave device that holds a predetermined space between the functional unit and a lid-shaped second insulating film that covers the excitation electrode of the functional unit and the surface wave propagation path is formed on the circuit board. It is designed to be implemented.

The surface acoustic wave device according to the present invention also includes
The outer surface of the surface acoustic wave element is covered with an insulating resin.

The surface acoustic wave device according to the present invention further comprises:
On one or the other main surface of the piezoelectric substrate, bump electrodes forming an external connection portion of the surface acoustic wave element are formed, and the surface acoustic wave element is flip-chip connected to the circuit board via the bump electrode. It is a thing.

The surface acoustic wave device according to the present invention also includes
A piezoelectric substrate, a functional part formed on one main surface of the piezoelectric substrate and having excitation electrodes for exciting surface waves in a predetermined direction on the surface of the piezoelectric substrate, and one main surface of the piezoelectric substrate. And a bump electrode forming an external connection portion of the functional portion, and provided on one main surface of the piezoelectric substrate,
A surface acoustic wave device having an insulating film from which the functional portion and a portion corresponding to the bump electrode have been removed, and the bump electrode of the surface acoustic wave device is flip-chip mounted on a circuit board via an anisotropic conductive material. It is designed to be connected.

The surface acoustic wave device according to the present invention also includes
A piezoelectric substrate, a functional part formed on one main surface of the piezoelectric substrate and having excitation electrodes for exciting surface waves in a predetermined direction on the surface of the piezoelectric substrate, and one main surface of the piezoelectric substrate. A first insulating film which is provided in the at least a portion corresponding to the functional portion and the bump electrode, and
It is attached to the first insulating film, maintains a predetermined space between the functional section and the excitation electrode and the surface wave propagation path of the functional section, and at least a portion corresponding to the bump electrode is formed. A surface acoustic wave device having the removed second insulating film is provided, and the bump electrodes of the surface acoustic wave device are flip-chip connected to a circuit board via an anisotropic conductive material. .

The surface acoustic wave device according to the present invention also includes
The first and second insulating films are composed of photosensitive films and are formed by photolithography.

A method of manufacturing a surface acoustic wave device according to the present invention comprises a plurality of surface acoustic waves having excitation electrodes for exciting surface waves in a predetermined direction on the surface of the piezoelectric substrate on one main surface of the piezoelectric substrate. A step of forming a functional portion of the wave element, and a step of providing a first insulating film on one main surface of the piezoelectric substrate in a shape excluding at least the functional portion and electrode pad portions for bump electrodes. A second insulating film is mounted on each of the first insulating films in a shape excluding the lid shape and the electrode pad portions that covers the functional portions, and a predetermined gap is provided between the functional insulating portions and the second insulating film. While maintaining a space, a step of covering the excitation electrode and the surface wave propagation path of each of the functional parts, and bump electrodes forming an external connection part of each of the functional parts on one main surface of the piezoelectric substrate. Separate the process of providing each surface acoustic wave element It is intended to include a step.

In the method of manufacturing a surface acoustic wave device according to the present invention, the first and second insulating films are made of photosensitive films and are formed by photolithography.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1 of the Invention Embodiment 1 of the present invention will be described below with reference to the drawings. 1 is a side sectional view showing a surface acoustic wave device according to a first embodiment of the present invention. In the figure, reference numeral 1 denotes a chip of a piezoelectric substrate which constitutes a surface acoustic wave device, and one main surface (upper surface in the drawing) of the chip 1 is provided with an excitation electrode made of a well-known IDT, and the excitation electrode forms a chip surface. Surface acoustic wave functional unit 1 having a surface wave propagation path excited in a predetermined direction of
a and electrode pads (not shown) extending from the excitation electrodes and serving as connection terminals to the outside of the functional unit are formed.

Reference numeral 3 denotes a circuit board on which the above chip is mounted, 3c
Is a terminal portion formed on a part of the circuit board 3, 4 is a wire for electrically connecting the electrode pad of the functional portion 1a and the terminal portion 3c, and 2a is a portion surrounding the functional portion 1a on the chip. A frame-shaped first insulating film 2b provided on the upper surface of the chip 1 is a lid-shaped second insulating film attached to the first insulating film 2a so as to cover the first insulating film 2a. The film holds a predetermined space 9 between the film and the functional portion 1a and covers the excitation electrode and the surface wave propagation path of the functional portion 1a.

In the surface acoustic wave device having such a structure, the functional portion 1a which influences the characteristics is protected by the first and second insulating films 2a and 2b while keeping the hollow portion 9 on the surface of the functional portion. Therefore, when the chip 1 is handled, there is no risk of accidentally damaging the functional portion 1a, and stable manufacture can be achieved. Further, since the functional portion 1a is simply sealed by the first and second insulating films 2a and 2b, it is not always necessary to hermetically seal the functional portion 1a unlike the conventional surface acoustic wave device, and it is inexpensive. A surface acoustic wave device can be obtained.

Second Embodiment of the Invention The second embodiment of the present invention will be described below with reference to the drawings. 2 is a side sectional view showing a surface acoustic wave device according to Embodiment 2 of the present invention. In this figure, parts that are the same as or correspond to those in FIG. In FIG. 2, 5
Is an insulating resin, and the first and second insulating films 2a,
After mounting the chip 1 on which the lid of the functional portion 1a is formed by 2b on the circuit board 3 and obtaining the electrical connection between the functional portion 1a and the terminal portion 3c by the metal wire 4, the chip 1 and the metallic wire 4
It is intended to cover and. As a result, the same effects as those of the first embodiment of the invention can be obtained, and a more reliable surface acoustic wave device can be obtained.

Third Embodiment of the Invention The third embodiment of the present invention will be described below with reference to the drawings. 3 (a)-(f)
FIG. 9A is a schematic diagram of a manufacturing process of a chip used in the surface acoustic wave device according to the third embodiment of the present invention. Also, FIG.
FIGS. 3A and 3B are perspective views showing the chip in the states of FIGS. 3D and 3F, respectively.

On the wafer 30 shown in FIG. 3A, as shown in FIG. 3B, a plurality of functional portions 1a are arranged at predetermined intervals.
Are formed by conductor patterning. Then, FIG.
As shown in (c), the photosensitive film 40 is attached to all the functional units 1a on the wafer, and the functional units as shown in FIGS. 3D and 4A are formed by photolithography. Forming a frame-shaped first insulating film 2a. FIG. 4A shows a case in which the two functional portions 1a are surrounded by the first insulating film 2a. Then, as shown in FIG. 3E, all the first
A single photosensitive film 5 for the insulating film 2a of
0 is mounted, and a predetermined space 9 is formed between each functional unit 1a. Then, as in FIGS. 3D and 4A, the lid-shaped second insulating film 2a for the respective first insulating films 2a as shown in FIGS. 3F and 4B is formed by the photolithography technique. The insulating film 2b is formed. After that, FIG.
Individual chips are formed by dicing at the positions of the separation lines 60 between the chips shown in (a) and (b).

Therefore, according to the surface acoustic wave device of the third embodiment of the present invention, the first and second insulating films capable of obtaining the same effects as those of the first and second embodiments of the present invention are finely divided. It can be manufactured in various shapes with high dimensional accuracy and high productivity.

Fourth Embodiment of the Invention Embodiment 4 of the present invention will be described below with reference to the drawings. 5 is a side sectional view showing a surface acoustic wave device according to a fourth embodiment of the present invention. In this figure, parts that are the same as or correspond to those in FIG. In FIG. 5, 6
Is a bump electrode forming an external connection portion of the functional portion 1a, and the chip 1 on which the lid of the functional portion 1a is formed by the first and second insulating films 2a and 2b is connected to a predetermined connection portion 3c of the circuit board 3. Flip chip connection.

With such a structure, it is possible to obtain a further downsized surface acoustic wave device while obtaining the same effect as that of the first embodiment of the invention. By covering the entire chip or part of the chip with an insulating resin as in the second embodiment of the invention, a more reliable surface acoustic wave device can be obtained.

Fifth Embodiment of the Invention Embodiment 5 of the present invention will be described below with reference to the drawings. 6 is a side sectional view showing a surface acoustic wave device according to a fifth embodiment of the present invention. Further, FIG. 7 is a plan view showing a chip 1 used in a surface acoustic wave device according to a fifth embodiment of the present invention. In these figures, parts that are the same as or correspond to those in FIG. As shown in FIGS. 6 and 7, the insulating film 7 is formed at least on the portion excluding the functional portion 1a on the chip 1 and the electrode pads 10 constituting the external connection portion thereof. It is desirable that the insulating film 7 is formed to have the same thickness as the bump electrode 6 or to be slightly thinner than the bump electrode 6 as shown in FIG. After that, as shown in FIG. 6, the chip 1 is secured to the surface of the functional portion 1a by the bump electrode 6 and the hollow portion 9 is secured to the predetermined connecting portion 3c of the circuit board 3 through the anisotropic conductive material 8. Flip chip connection.

According to the surface acoustic wave device of the fifth embodiment of the present invention, since the chip 1 is bonded to the circuit board 3 not only at the bump electrode 6 but also at the insulating film 7, the bonding stress is not generated. It is possible to obtain a surface acoustic wave device having high connection reliability of the bump electrodes 6 without concentration. By covering the entire chip or part of the chip with an insulating resin as in the second embodiment of the invention, a more reliable surface acoustic wave device can be obtained. Further, if the insulating film 7 is formed by photolithography using a photosensitive material as in the third embodiment of the invention, the insulating film 7 is manufactured into a fine shape with high dimensional accuracy and high productivity. Is something that can be done.

Sixth Embodiment of the Invention Embodiment 6 of the present invention will be described below with reference to the drawings. 8 is a side sectional view showing a surface acoustic wave device according to a sixth embodiment of the present invention. In this figure, parts that are the same as or correspond to those in FIG. As shown in FIG. 8, the first insulating film 7a is provided on at least a portion excluding the functional portion 1a and the bump electrode pad 10 on the chip 1, and then the second insulating film 7b is provided.
The functional portion 1a is covered while holding the hollow portion 9 on the surface portion of a, and the electrode pad 10 is removed similarly to the first insulating film 7a to expose the bump electrode 6. It is desirable that the first insulating film 7a and the second insulating film 7b are formed so that the total thickness thereof is the same as or slightly smaller than that of the bump electrode 6. After that, the chip 1 is flip-chip connected to the predetermined connecting portion 3c of the circuit board 3 via the anisotropic conductive material 8 by the bump electrode 6.

Therefore, the same effect as that of the fifth embodiment of the invention can be obtained, and the functional portion 1a which further influences the characteristics is kept hollow by the first insulating film 7a and the second insulating film 7b. However, since the chip 1 is protected, there is no risk of accidentally damaging the functional unit 1a when handling the chip 1, and stable manufacturing is possible. Further, since the functional portion 1a is simply sealed by the first insulating film 7a and the second insulating film 7b, it is not always necessary to perform hermetic sealing unlike the conventional surface acoustic wave device. Therefore, an inexpensive surface acoustic wave device can be obtained.

By covering the entire chip or part of the chip with an insulating resin as in the second embodiment of the invention, a more reliable surface acoustic wave device can be obtained. Furthermore,
Similar to the third embodiment of the invention, the first insulating film 7a
If a photosensitive material is used for the second insulating film 7b and the second insulating film 7b by photolithography, the first insulating film 7a and the second insulating film 7b can be formed in a fine shape with high dimensional accuracy. Moreover, it can be manufactured with high productivity.

Seventh Embodiment of the Invention Embodiment 7 of the present invention will be described below with reference to the drawings. 9 (a) to 9 (f)
FIG. 14A is a schematic view of a step of manufacturing a chip used for the surface acoustic wave device according to the seventh embodiment of the present invention. On the wafer 30 shown in FIG. 9A, as shown in FIG. 9B, a plurality of functional portions 1a are formed at predetermined intervals by conductor patterning. Next, a first insulating film 7a made of, for example, a photosensitive material is provided on the surface of the wafer including the functional portion 1a, and the functional portion 1a and the electrode pad portion for the bump electrode are removed by photolithography to form a shape. A first insulating film 7a having the shape shown in FIG. 3C is formed.

In this state, a second insulating film 7b made of a photosensitive material is further provided on the first insulating film 7a, and a lid portion covering the functional portion 1a is formed by the same photolithography process. By excluding the electrode pad portion for the bump electrode, the second insulating film 7b shown in FIG. 7C is formed. Next, the bump electrodes 6 corresponding to the respective functional parts are formed as shown in FIG. At this time, the first
It is desirable that the total thickness of the insulating film 7a and the second insulating film 7b is equal to or slightly thinner than the height of the bump electrode 6. Thereafter, as shown in FIG. 7E, a single anisotropic conductive material 8 is provided so as to cover all the functional portions and their bump electrodes, and the bump electrodes 6 are formed.
Contact with. In this state, individual chips are formed by dicing at the positions of the separation lines 60 between the chips shown in FIG.

According to the method of manufacturing a surface acoustic wave device according to the seventh embodiment of the present invention, it is possible to manufacture with high productivity a surface acoustic wave device which can obtain the same effects as those of the fifth and sixth embodiments of the invention. You can

[0032]

The surface acoustic wave device of the present invention includes a piezoelectric substrate and an exciting electrode formed on one main surface of the piezoelectric substrate for exciting a surface wave in a predetermined direction on the surface of the piezoelectric substrate. A functional portion having, a frame-shaped first insulating film provided on one main surface of the piezoelectric substrate so as to surround the functional portion, and mounted on the first insulating film,
A surface acoustic wave device that holds a predetermined space between the functional unit and a lid-shaped second insulating film that covers the excitation electrode and the surface wave propagation path of the functional unit is mounted on a circuit board. As a result, the hollow portion is secured on the surface of the functional portion and the functional portion is protected, resulting in stable manufacturing.

In the surface acoustic wave device of the present invention, since the outer surface of the surface acoustic wave element is covered with the insulating resin, a highly reliable device can be obtained.

In the surface acoustic wave device of the present invention, a bump electrode forming an external connection portion of the surface acoustic wave element is formed on one or the other of the main surfaces of the piezoelectric substrate, and the surface of the bump electrode is connected via the bump electrode. Since the elastic wave element is flip-chip connected to the circuit board, the device can be downsized.

The surface acoustic wave device of the present invention also includes a piezoelectric substrate and an exciting electrode formed on one main surface of the piezoelectric substrate and exciting the surface wave in a predetermined direction on the surface of the piezoelectric substrate. A functional portion having, a bump electrode formed on one main surface of the piezoelectric substrate and forming an external connection portion of the functional portion, and provided on one main surface of the piezoelectric substrate, at least the functional portion and A surface acoustic wave device having an insulating film from which portions corresponding to the bump electrodes have been removed,
Since the bump electrodes of the surface acoustic wave element are flip-chip connected to the circuit board via the anisotropic conductive material, the chip bonding stress is not concentrated and the bump electrode connection reliability can be improved.

The surface acoustic wave device of the present invention also includes a piezoelectric substrate and an excitation electrode formed on one main surface of the piezoelectric substrate and exciting the surface wave in a predetermined direction on the surface of the piezoelectric substrate. Attached to the first insulating film, the first insulating film having the functional portion, the first insulating film provided on one main surface of the piezoelectric substrate, and at least the portions corresponding to the functional portion and the bump electrodes are removed. And a second insulating film in which a predetermined space is maintained between the functional portion and at least a portion corresponding to the bump electrode is removed while covering the excitation electrode and the surface wave propagation path of the functional portion. Since the bump electrodes of the surface acoustic wave element having the above are arranged to be flip-chip connected to the circuit board through the anisotropic conductive material, the protection of the functional portion is strengthened. Tightly sealed It is not necessary to do so, it can be inexpensive device may further not concentrated bonding stress of the chip, increasing the connection reliability of the bump electrode.

The surface acoustic wave device of the present invention also includes the first
And the second insulating film is composed of a photosensitive film,
Since it is formed by photolithography, a fine shape can be manufactured with high dimensional accuracy and high productivity.

The method of manufacturing a surface acoustic wave device according to the present invention comprises:
A step of forming a functional portion of a plurality of surface acoustic wave elements having excitation electrodes for exciting surface waves in a predetermined direction on the surface of the piezoelectric substrate on one main surface of the piezoelectric substrate; and at least the functional portions described above. And a step of providing a first insulating film on one main surface of the piezoelectric substrate in a shape excluding the electrode pad portions for bump electrodes, and the functional portions on the first insulating film. The second insulating film is attached in a shape excluding the lid shape and the electrode pad portions for covering the space to maintain a predetermined space between the functional portions and the excitation electrodes and surface waves of the functional portions. A step of covering the propagation path, a step of providing a bump electrode forming an external connection portion of each of the functional portions on one main surface of the piezoelectric substrate for each functional portion, the plurality of functional portions and each bump electrode. The process of mounting a single anisotropic conductive material in the form of a cover and Because it is intended to include a step of separating the surface acoustic wave device, it is possible to manufacture with high productivity.

The method of manufacturing a surface acoustic wave device according to the present invention comprises:
Further, since the first and second insulating films are made of a photosensitive film and are formed by photolithography, it is possible to manufacture fine shapes with high dimensional accuracy and high productivity.

[Brief description of drawings]

FIG. 1 is a side sectional view showing a surface acoustic wave device according to a first embodiment of the present invention.

FIG. 2 is a side sectional view showing a surface acoustic wave device according to a second embodiment of the present invention.

FIG. 3 is a schematic diagram of a manufacturing process of a chip used in a surface acoustic wave device according to a third embodiment of the present invention.

FIG. 4 is a perspective view during a manufacturing process of a chip used in a surface acoustic wave device according to a third embodiment of the present invention.

FIG. 5 is a side sectional view showing a surface acoustic wave device according to a fourth embodiment of the present invention.

FIG. 6 is a side sectional view showing a surface acoustic wave device according to a fifth embodiment of the present invention.

FIG. 7 is a plan view of a chip used in a surface acoustic wave device according to a fifth embodiment of the present invention.

FIG. 8 is a side sectional view showing a surface acoustic wave device according to a sixth embodiment of the present invention.

FIG. 9 is a schematic diagram of a manufacturing process of a chip used in a surface acoustic wave device according to a seventh embodiment of the present invention.

FIG. 10 is a side sectional view showing a conventional surface acoustic wave device.

FIG. 11 is a side sectional view showing another conventional surface acoustic wave device.

[Explanation of symbols]

1 surface acoustic wave device, 1a functional part, 2a insulating film (frame), 2b insulating film (lid), 3
Circuit board, 3c connection part, 4 metal wire,
5 Insulating coating resin, 6 Bump electrode, 7
Insulating film, 7a First insulating film, 7a
b second insulating film, 8 anisotropic conductive material,
9 hollow part, 10 electrode pad, 11 metallic cover, 12 package, 12a, 12b package peripheral wall part, 12c connecting part, 12d sealing part, 30 wafer, 40, 50 photosensitive film, 60 dicing line.

Claims (8)

[Claims] 1. A piezoelectric substrate, a functional part having an excitation electrode formed on one main surface of the piezoelectric substrate and exciting a surface wave in a predetermined direction on the surface of the piezoelectric substrate, and the functional part. A frame-shaped first insulating film provided on one main surface of the piezoelectric substrate so as to surround it and attached to the first insulating film to maintain a predetermined space between the functional unit and the functional unit. In addition, the surface acoustic wave device having the excitation electrode of the functional portion and the lid-shaped second insulating film covering the surface wave propagation path is mounted on the circuit board. . 2. The surface acoustic wave device according to claim 1, wherein the outer surface of the surface acoustic wave element is covered with an insulating resin. 3. A piezoelectric substrate on one or the other main surface thereof,
3. A bump electrode forming an external connection portion of the surface acoustic wave element is formed, and the surface acoustic wave element is flip-chip connected to the circuit board via the bump electrode. Surface acoustic wave device. 4. A piezoelectric substrate, a functional portion having an excitation electrode formed on one main surface of the piezoelectric substrate and exciting a surface wave in a predetermined direction on the surface of the piezoelectric substrate, and the piezoelectric substrate. A bump electrode which is formed on one main surface of the piezoelectric substrate and constitutes an external connection portion of the functional part, and at least a portion corresponding to the functional part and the bump electrode is removed on the one main surface of the piezoelectric substrate. Surface acoustic wave device having an insulating film, and the bump electrodes of the surface acoustic wave device are flip-chip connected to a circuit board via an anisotropic conductive material. apparatus. 5. A piezoelectric substrate, a functional portion having an excitation electrode formed on one main surface of the piezoelectric substrate and exciting a surface wave in a predetermined direction on the surface of the piezoelectric substrate, and the piezoelectric substrate. Between the first insulating film, which is provided on one main surface of the first insulating film and at least the portions corresponding to the functional portion and the bump electrode are removed, and is mounted on the first insulating film, and between the functional portion. A surface acoustic wave element which holds a predetermined space and covers the excitation electrode and the surface wave propagation path of the functional portion and has a second insulating film from which at least a portion corresponding to the bump electrode is removed A surface acoustic wave device characterized in that the bump electrodes of the surface acoustic wave element are flip-chip connected to a circuit board via an anisotropic conductive material. 6. The surface according to claim 1, wherein the first and second insulating films are made of a photosensitive film and are formed by photolithography. Elastic wave device. 7. A step of forming a functional portion of a plurality of surface acoustic wave elements having excitation electrodes for exciting surface waves in a predetermined direction on the surface of the piezoelectric substrate, on one main surface of the piezoelectric substrate. A step of providing a first insulating film on one main surface of the piezoelectric substrate in a shape excluding at least the functional portions and electrode pad portions for bump electrodes; and a step of forming a first insulating film on the first insulating film. A second insulating film is attached in a shape that excludes the lid and the electrode pad portions that cover the functional portions, maintains a predetermined space between the functional portions, and excites the functional portions. A step of covering the electrodes and the surface wave propagation path; a step of providing a bump electrode constituting an external connection portion of each of the functional portions on one main surface of the piezoelectric substrate for each functional portion; and a plurality of the functional portions, Step of mounting a single anisotropic conductive material so as to cover each bump electrode And a step of flip-chip connecting each bump electrode, and a step of separating each bump electrode into individual surface acoustic wave elements. 8. The method of manufacturing a surface acoustic wave device according to claim 7, wherein the first and second insulating films are composed of photosensitive films and are formed by photolithography.