JP2003168559A - Donor film and substrate for organic LED, organic LED display panel using them, and method of manufacturing the same - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To improve the light-emitting characteristics of an organic LED display panel to extend its life. SOLUTION: A step of attaching a donor film for an organic LED, which comprises a base film and a light-to-heat conversion layer and a transfer layer sequentially laminated thereon, to a substrate such that the transfer layer is in contact with the base, Transferring the transfer layer onto the substrate by radiating transfer energy by light or heat from the substrate, wherein the peak value of the transfer energy is from 0.6 to
It is manufactured by a control method of 1.8 J / cm ² .

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a donor film and a substrate for an organic LED, and an organic LED using them.
The present invention relates to a display panel and a manufacturing method thereof.

[0002]

2. Description of the Related Art Recently, a technique for patterning an organic light emitting layer for a full color organic LED display panel has been actively researched and developed. For example, a mask vapor deposition method (Japanese Patent Laid-Open No. 8-2272).
No. 76), an inkjet method (JP-A-10-123).
77). However, the mask vapor deposition method has a problem that it is very difficult to manufacture an element using a large-sized substrate, and the inkjet method also has a problem that it takes a very long time to manufacture an element when a large-sized substrate is used. . Therefore, as a patterning method capable of using a large-sized substrate and significantly reducing the manufacturing time, a transfer method (Japanese Patent Laid-Open No. 10-208881;
JP-A-11-237504, JP-A-11-260
No. 549) has been proposed. Further, for the purpose of improving the aperture ratio, a method of extracting light from the direction opposite to that of the TFT substrate (JP-A-10-189252) has also been proposed.

[0003]

However, in the above transfer method, when the organic light emitting material (low molecular weight material, high molecular weight material) is irradiated with laser light, the organic light emitting material absorbs the laser light, or Due to thermal damage,
There is a problem that the characteristics (luminous efficiency, life, etc.) as an organic LED are deteriorated. Further, if the transfer energy is lowered to solve the above problem, a problem that the transfer layer is not uniformly transferred to the substrate occurs.

[0004]

According to the present invention, a step of placing a donor film for an organic LED, which comprises a substrate film, a photothermal conversion layer and a transfer layer, which are sequentially laminated on the substrate film, on a substrate so that the transfer layer is in contact with the substrate. And a step of transferring the transfer layer onto the substrate by radiating transfer energy by light or heat from the base material film side, and the peak value of the transfer energy is set to 0.6 to 1.8 J / cm ² . The present invention provides a method for manufacturing an organic LED display panel characterized by controlling.

[0005]

BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing an organic LED display panel using a donor film for an organic LED and a substrate according to the present invention will be described. In the embodiment of the present invention, as shown in FIG. 1, an organic LED donor film 7 in which a transfer layer 3 is laminated on a base film 6 is placed on a second electrode 10 of a substrate 8. Thereafter, the transfer layer 3 in the donor film 7 is transferred to the second electrode 1 by irradiating transfer energy from the back surface of the donor film 7 with light or heat.
Transfer over 0. Further, the base film 6 is removed, and then the first electrode is formed if necessary, whereby the organic LED display panel can be manufactured.

However, in the present invention, when the transfer is performed,
The peak value of transfer energy is 0.6 to 1.8 J / cm.
It is preferably ² and more preferably 0.8 to 1.6 J / cm ² .

Here, the transfer energy means an organic LED.
After attaching the donor film 7 for the substrate to the substrate 8, the organic LE
This is the energy when the light or heat rays emitted from an energy source such as a laser when the transfer layer 3 in the D donor film 7 is transferred to the substrate 8 side is measured on the organic LED donor film.

The peak value of transfer energy is 0.6 J
If it is / cm ² or less, the transfer layer cannot be evenly transferred onto the substrate, which causes leakage between electrodes and a non-light emitting region. If it is 1.8 J / cm ² or more, the luminous efficiency and life of the organic LED element deteriorate.

When transferring with low energy, no particular problem occurs when a low molecular weight material is used, but when using a high molecular weight material, transfer cannot be made uniform if the transfer energy is too low. The problem arises. In this case, by using a layer having a melting point of 300 ° C. or less as a layer in which the transfer layer and the substrate are in contact, the transfer layer can be transferred uniformly. Here, the transfer step is preferably performed in an inert gas or in a vacuum.

When the electrode is provided on the substrate before the organic LED donor film is attached, the electrode is preferably cleaned before the organic LED donor film is attached to the substrate. For example, washing with IPA or the like for the purpose of removing dust and the like adhering to the electrodes
It is desirable to perform UV ozone treatment or plasma treatment for the purpose of increasing the adhesion to the donor film for ED and to perform cleaning treatment such as reverse sputtering for the purpose of removing the insulating layer formed on the electrode surface.

Here, by using organic layers having different electrical and optical characteristics formed on different base films respectively (for example, for an organic LED in which a hole injection material is formed on the base film). Donor film, organic LED donor film having a hole transport material formed on a base film, and organic LED having a light emitting material formed on a base film
Donor film, a donor film for an organic LED in which an electron transport material is formed on a base film, and the like, and a transfer process may be repeated to form a multilayer film including an organic layer on a substrate.

An organic red light emitting multilayer film (for example, hole transport layer / red light emitting layer / first electrode), organic green light emitting multilayer film (for example, hole transport layer / green light emitting layer / first electrode). , And an organic blue light emitting multilayer film (for example, a hole transport layer / a blue light emitting layer / a first electrode) are formed on a base film, respectively, and a transfer process is performed using a donor film for an organic LED. The multicolor light emitting element composed of the red, green, and blue light emitting multilayer films may be formed on the substrate by repeating, but the present invention is not particularly limited thereto.

The respective components and their manufacturing methods will be described below. 1. Donor Film As shown in FIG. 2A, the donor film 7 is composed of at least a base film 1, a photothermal conversion layer (light absorbing layer) 2 and a transfer layer 3 formed on the base film 1. ing. If necessary, a heat propagation layer 4 may be provided between the photothermal conversion layer (light absorption layer) 2 and the transfer layer 3 as shown in FIG. If necessary, a gas generating layer 5 may be provided between the photothermal conversion layer (light absorbing layer) 2 and the transfer layer 3 as shown in FIG.

1-1. Base Film The base film 1 is made of a transparent polymer film, for example, polycarbonate, polyethylene terephthalate,
Examples thereof include polyester, polyacrylic, polyepoxy, polyethylene, polystyrene, and polyether sulfone, but the present invention is not particularly limited to these, but polyethylene terephthalate and polycarbonate are most preferable. The thickness is 10 to 600 μm.
Is preferable, and further, 50 to 200 μm is preferable. Further, it is preferable to use a substrate film having a heat resistant temperature of 150 ° C. or higher.

1-2. Light-to-heat conversion layer (light-absorption layer) The light-to-heat conversion layer (light-absorption layer) 2 is composed of a substance having a property of absorbing light and efficiently generating heat, such as aluminum or its oxide / sulfide. It is possible to use a metal film made of, a film in which carbon black, graphite, an infrared dye or the like is dispersed in a polymer material.

1-3. Heat Propagation Layer (Peeling Layer) The heat propagation layer (peeling layer) 4 is a layer for efficiently performing transfer, and examples thereof include poly-α-methylstyrene.

1-4. Gas Generation Layer The gas generation layer 5 is a layer that efficiently transfers light by absorbing light or heat and releasing a gas (for example, nitrogen gas or the like) by a decomposition reaction, and is, for example, pentatetranitrate. Examples include erythritol and trinitrotoluene.

1-5. Transfer Layer The transfer layer 3 is a layer that is actually transferred in the transfer step, has at least an organic layer, and has the following configuration, for example. Organic layer Organic layer / second electrode First electrode / organic layer First electrode / organic layer / second electrode

1-5-1. Organic Layer The organic layer may have a single-layer structure or a multi-layer structure, and examples thereof include the following structures. Organic light emitting layer Hole transport layer Electron transport layer Hole transport layer / Organic light emitting layer Organic light emitting layer / Electron transport layer Hole transport layer / Organic light emitting layer / Electron transport layer Hole injection layer / Hole transport layer / Organic light emitting layer / Electron Transport Layer Hole Injection Layer / Hole Transport Layer / Organic Light Emitting Layer / Blocking Layer / Electron Transport Layer Here, the organic light emitting layer may be a single layer or a multilayer structure.

Here, the organic light emitting layer can be formed by a conventional method. For example, the organic light emitting material is directly formed by a dry process such as a vacuum vapor deposition method, an EB method, an MBE method and a sputtering method. It is possible to film. Further, for example, a spin coating method using a coating liquid for forming an organic light emitting layer,
It is possible to form a film by a wet process such as a dip coating method, a doctor blade method, a discharge coating method, a spray coating method, an inkjet method, and a relief printing method, an intaglio printing method, a screen printing method, and a microgravure coating method.

Here, the coating solution for forming an organic light emitting layer is a solution containing at least a light emitting material, and may contain one kind or a plurality of kinds of light emitting materials, or a resin for binding. It may be. In addition, a leveling agent, a light emission assisting agent, a charge transporting material, an additive (donor, acceptor, etc.), a light emitting dopant, or the like may be contained.

The environment for forming the organic layer is not particularly limited, but it is preferable to form the film in an inert gas such as nitrogen or argon in consideration of moisture absorption of the film and alteration of the material. After forming the organic film, it is preferable to perform heat drying for the purpose of removing the residual solvent. Also, as the environment for drying,
From the viewpoint of preventing deterioration of the organic material used, it is preferably in an inert gas such as nitrogen or argon. Furthermore, it is preferable to carry out under reduced pressure.

As a light emitting material for the organic light emitting layer, an organic LED is used.
Known luminescent materials for use can be used. For example, an aromatic dimethylene compound such as a low-molecular light emitting material (eg, 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi), 5-methyl-2- [2- [4-]
Oxadiazole compounds such as (5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazole, 3- (4-biphenylyl) -4-phenyl-5-
t-Butylphenyl-1,2,4-triazole (TA
Z) and other triazole derivatives, 1,4-bis (2-methylstyryl) benzene and other styrylbenzene compounds, thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, diphenoquinone derivatives, fluorenone derivatives, etc. Organic materials,
Azomethine zinc complex, fluorescent organometallic compounds such as (8-hydroxyquinolinato) aluminum complex (Alq3), etc.), polymer light emitting material (eg, poly (2-decyloxy-1,4-phenylene) DO-PPP, poly [2,5
-Bis- [2- (N, N, N-triethylammonium) ethoxy] -1,4-phenyl-alto-1,4-
Phenylylene] dibromide (PPP-NEt3 +), poly [2- (2'-ethylhexyloxy) -5-methoxy-1,4-phenylenevinylene] (MEH-PP
V), poly [5-methoxy- (2-propanoxysulfonyl) -1,4-phenylenevinylene] (MPS-P
PV), poly [2,5-bis- (hexyloxy)-
1,4-phenylene- (1-cyanovinylene)] (CN
-PPV), (poly (9,9-dioctylfluorene)) (PDAF) and the like, precursors of polymer light emitting materials (for example, PPV precursor, PNV precursor, PPP precursor, etc.) and the like.

Examples of the binder resin include polycarbonate and polyester. The solvent may be any solvent that can dissolve or disperse the light emitting material, and is not particularly limited in the present invention, for example, pure water, methanol, ethanol, THF, chloroform, toluene, xylene, Trimethylbenzene and the like can be mentioned.

The charge injecting / transporting layer may be a single layer or a multi-layer structure. Here, the charge injecting and transporting layer can be formed by a conventional method. For example, the charge injecting and transporting material can be directly deposited by vacuum vapor deposition, EB, MBE.
The film can be formed by a dry process such as a sputtering method or a sputtering method. Further, for example, spin coating, dip coating, doctor blade, discharge coating, spray coating, inkjet, and letterpress printing, intaglio printing, screen printing using a charge injection transport layer forming coating liquid. It is also possible to form the film by a wet process such as a coating method or a microgravure coating method.

The coating liquid for forming the charge injecting and transporting layer is a solution containing at least the charge transporting material, and may contain one kind or multiple kinds of the charge injecting and transporting material.
A resin for binding may be contained. In addition,
Leveling agents, additives (donors, acceptors, etc.) and the like may be contained.

As the charge injection / transport material, for organic LED,
Known charge transport materials for organic photoconductors can be used. For example, as the charge transport material, a hole transport material (for example, an inorganic p-type semiconductor material, a porphyrin compound, N,
N'-bis- (3-methylphenyl) -N, N'-bis-
Aromatic tertiary amine compounds such as (phenyl) -benzidine (TPD), N, N'-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (NPD), hydrazone compounds, quinacridone compounds, Low molecular weight materials such as styrylamine compounds, polyaniline (PANI), 3,4-
Polymeric materials such as polyethylenedioxythiophene / polystyrene sulfonate (PEDT / PSS), poly [triphenylamine derivative] (Poly-TPD), polyvinylcarbazole (PVCz), poly (p-phenylenevinylene) precursor (Pre) -PPV), poly (p-
Polymeric material precursors such as naphthalene vinylene) precursor (Pre-PNV)), electron transport materials (for example, inorganic n-type semiconductor materials, oxadiazol derivatives, triazole derivatives, thiopyrazine dioxide derivatives, benzoquinone derivatives) , Low molecular weight materials such as naphthoquinone derivative, anthraquinone derivative, diphenoquinone derivative, fluorenone derivative, poly [oxadiazole [(Poly-OXZ)]
Polymeric materials such as).

Examples of the binder resin include polycarbonate and polyester. The solvent may be any solvent that can dissolve or disperse the charge transport material, and examples thereof include pure water, methanol, ethanol, THF, chloroform, xylene, and trimethylbenzene.

The blocking layer may be a single layer or a multilayer structure. Further, the coating liquid for forming the blocking layer is a solution containing at least the charge blocking material, and may contain one kind or multiple kinds of charge blocking materials, or may contain a binding resin. Good. In addition, a leveling agent and the like may be contained.

Organic LED as the charge blocking material
Known charge blocking materials for use can be used, and examples of the charge blocking material include 4,7-diphenyl-1,10-phenanthroline and 2,9-dimethyl-1,10-phenanthroline.

Examples of the binder resin include polycarbonate and polyester. here,
The solvent may be any solvent that can dissolve or disperse the charge blocking material, and examples thereof include pure water, methanol, ethanol, THF, chloroform, xylene, trimethylbenzene and the like.

1-5-2. First Electrode A conventional electrode material can be used as the first electrode material. When the first electrode is used as an anode, a metal having a high work function (Au, Pt, Ni, etc.) or a transparent electrode (ITO, IDIXO, SnO _2, etc.) can be used. Further, these materials can be formed by EB, sputtering, resistance heating vapor deposition, or the like.

Further, when the first electrode is used as a cathode, metals having a low work function (Ca, Ce, Cs, Rb, B) are used.
Use of a single layer film of an alkali metal such as a or an alkaline earth metal) or a thin film insulating layer (insulator made of an alkali metal such as LiF, Li ₂ O or BaF ₂ or an insulator of an alkaline earth metal). And a metal having a low work function, and /
Alternatively, a laminated film of an insulator and a metal (Al, Ag, or the like), and / or a transparent electrode (ITO, IDIXO, SnO _2, or the like) can be given. In addition, these materials are
B, sputtering, resistance heating vapor deposition or the like can be used.

1-5-3. Second Electrode A conventional electrode material can be used for the second electrode. When the first electrode is used as an anode, the second electrode is used as a cathode, and when the first electrode is used as a cathode,
The second electrode is used as an anode. Here, the same material as the first electrode can be used as the anode material and the cathode material.

When a substrate with a TFT is used as the substrate, the electrodes are previously patterned in a stripe shape in order to prevent a short circuit due to the electrodes between the pixels, and a laser is irradiated in a direction perpendicular to the electrodes patterned in the stripe shape. Alternatively, the electrodes may be transferred in a square shape by radiating and transferring heat, or a laser may be irradiated or heat may be radiated by using an electrode which is patterned in a square shape from the beginning. Also, using a pulsed laser as the laser,
The transfer may be performed for each pixel. Also, TF as a substrate
When a substrate with T is used, the film thickness of the electrode may be thin enough to prevent a short circuit between the pixels in order to prevent a short circuit due to the electrode between the pixels.

2. Donor film The donor film is composed of a base film and a transfer layer.

3. Substrate Examples of substrates that can be used in the present invention include:
Inorganic materials such as glass and quartz, plastics such as polyethylene terephthalate, insulating substrates such as ceramics such as alumina substrates, or metal substrates such as aluminum and iron are coated with insulators such as SiO ₂ and organic insulating materials. A substrate or a substrate in which the surface of a metal substrate such as aluminum is subjected to insulation treatment by a method such as anodic oxidation can be used. A switching element such as a thin film transistor may be formed on the substrate.

However, in order to form a thin film transistor using a polysilicon TFT formed by a low temperature process, a substrate that does not melt at a temperature of 500 ° C. or lower and is free from distortion is preferable. Further, in order to form a thin film transistor using a polysilicon TFT formed by a high temperature process, a substrate that does not melt at a temperature of 1000 ° C. or lower and does not cause distortion is preferable.

4. Organic LED Element The organic LED element used in the present invention comprises a first electrode, an organic layer having at least one organic light emitting layer, and a second electrode. At least one of the organic layers is
Although it is necessary to form a film by the transfer method of the present invention,
The other layer may be formed by a conventional method, such as spin coating method, dipping method, doctor blade method, discharge coating method, spray coating method, or other coating method, inkjet method, letterpress printing, intaglio printing method. It can be formed by a wet process such as a screen printing method or a printing method such as a microgravure printing method, or a dry process such as a vacuum deposition method, an EB method, an MBE method, or a sputtering method.
Further, as the electrode, a conventional electrode material can be used, and it may be formed by a transfer method at the same time as the organic layer, or by a conventional method, for example, EB, sputtering, resistance heating evaporation method or the like. It is possible. It is also possible to perform patterning by a photolithography method.

5. Polarizing Plate The polarizing plate applicable to the present invention may be a combination of a conventional linear deflection plate and a 1 / 4λ plate. Thereby, the contrast can be improved.

6. Sealing Film, Sealing Substrate As the sealing film or sealing substrate applicable to the present invention, it is possible to use materials and sealing methods conventionally used for sealing, for example, nitrogen gas, argon gas. A method of sealing an inert gas such as glass with a metal such as glass, and a method of mixing a hygroscopic agent such as barium oxide into the inert gas.
It is possible to directly spin coat the resin on one electrode, or to bond it to form a sealing film, or to form a sealing film by depositing silicon nitride or the like on the first electrode by plasma CVD. . As a result, it is possible to prevent oxygen and moisture from the outside from mixing into the element and improve the life.

As a method of driving the organic LED display panel of the present invention, a conventional method of driving an organic LED display panel can be used. For example, passive matrix driving or active matrix driving may be used.

[0043]

EXAMPLES The present invention will be described more specifically by way of examples, but the present invention is not limited to these examples. (Example 1) A polyethylene terephthalate film having a thickness of 0.1 mm was used as a base film, and a thermosetting epoxy resin mixed with carbon particles as a heat conversion layer was coated on the film to a thickness of 5 μm and cured at room temperature. . Next, as a heat transfer and peeling layer, a poly-α-methylstyrene film is coated to a thickness of 1 μm to form a base film.

Next, using a coating solution for forming a blue light emitting layer on the base film, a microgravure coater was used for 80%.
nm emission layer was formed. Here, as the blue light emitting layer forming coating liquid, PDAF was used after being dissolved in xylene at a solid content of 1 wt%. The viscosity of the coating liquid at this time was 2.8 cps.

Next, this film was heated at 90 ° C. for 1 hour in a high purity nitrogen atmosphere to remove the solvent in the light emitting layer. Next, using a resistance heating vapor deposition device on this light emitting layer,
40 nm of NPD (melting point: mp = 281 ° C.) is formed,
The hole transport layer was used. This was used as a donor film.

Next, an IT having a length of 20 mm and a width of 100 μm
PED on the substrate with O lined up at 200 μm pitch
A 20 nm hole-transporting layer was formed with a spin coater using a hole-transporting-layer-forming coating liquid composed of OT / PSS.
Heat drying was carried out at 0 ° C. for 1 minute in high purity nitrogen.

Next, the donor film was once adhered onto the substrate with a roller under a pressure of 2 kg, and then YA
The ITO on the substrate was scanned with a G laser to transfer the transfer layer including the light emitting layer and the hole transport layer, and then the donor film was peeled from the substrate. This substrate was observed with an optical microscope to see if the transfer layer was transferred onto the substrate (presence or absence of the transfer layer).

Here, the transfer energy of the laser on the donor film during transfer was set to 0.6 J / cm ² .
The transfer energy is measured by a power meter (GENTE
C company make, TPM300).

Example 2 The same as Example 1 except that the transfer energy at the time of transfer was 0.8 J / cm ² . (Example 3) The transfer energy during transfer was 1.2 J / c.
Same as Example 1 except that m ² was used. (Example 4) The transfer energy at the time of transfer was 1.4 J / c.
Same as Example 1 except that m ² was used. (Example 5) The transfer energy at the time of transfer is 1.4 J / c.
Same as Example 1 except that m ² was used.

Example 6 The same as Example 1 except that the transfer energy at the time of transfer was 1.6 J / cm ² . (Example 7) The transfer energy at the time of transfer was 1.8 J / c.
Same as Example 1 except that m ² was used. (Example 8) The transfer energy at the time of transfer was 2.0 J / c.
Same as Example 1 except that m ² was used. (Example 9) The transfer energy at the time of transfer was 2.2 J / c.
Same as Example 1 except that m ² was used. (Example 10) The transfer energy at the time of transfer was 2.4 J /
The same procedure was performed as in Example 1 except that the value was cm ² .

Comparative Example 1 The same as Example 1 except that the transfer energy at the time of transfer was 0.2 J / cm ² . (Comparative Example 2) The transfer energy during transfer was 0.4 J / c.
Same as Example 1 except that m ² was used.

(Example 11) As a base film,
A polyethylene terephthalate film having a thickness of 1 mm is used, and a thermosetting epoxy resin mixed with carbon particles as a heat conversion layer is coated on the film to a thickness of 5 μm and cured at room temperature. Then as a heat transfer and release layer,
A base film is formed by coating a poly-α-methylstyrene film to a thickness of 1 μm.

Next, Alq3 is formed in a thickness of 60 nm on this base film by using a resistance heating vapor deposition device to form a light emitting layer. Next, a 40 nm-thick NPD film was formed on this light emitting layer using a resistance heating vapor deposition device to form a hole transport layer.
This was used as a donor film.

Next, indium (melting point: mp = 156.6 ° C.) width of 100 is applied to the substrate using a resistance heating vapor deposition apparatus.
A film was formed by mask vapor deposition so as to have a film thickness of 100 μm, pitch of 200 μm, and used as a cathode.

Next, the donor film was once brought into close contact with the substrate at a pressure of 2 kg using a roller, and then YA
The ITO on the substrate was scanned with a G laser to transfer the transfer layer including the light emitting layer and the hole transport layer, and then the donor film was peeled from the substrate. This substrate was observed with an optical microscope to see if the transfer layer was transferred onto the substrate (presence or absence of the transfer layer).

Here, the transfer energy of the laser on the donor film at the time of transfer was set to 0.2 J / cm ² .
The transfer energy is measured by a power meter (GENTE
C3, PS3300WBv2).

Example 12 The same as Example 11 except that the transfer energy at the time of transfer was 0.8 J / cm ² . (Example 13) Transfer energy at the time of transfer was 1.2 J /
Same as Example 11 except that cm ² was used. (Example 14) The transfer energy at the time of transfer was 1.4 J /
Same as Example 11 except that cm ² was used. (Example 15) The transfer energy at the time of transfer was 1.4 J /
Same as Example 11 except that cm ² was used.

Example 16 The same as Example 11 except that the transfer energy at the time of transfer was 1.6 J / cm ² . (Example 17) The transfer energy at the time of transfer was 1.8 J /
Same as Example 11 except that cm ² was used. (Example 18) Transfer energy at the time of transfer was 2.0 J /
Same as Example 11 except that cm ² was used. (Example 19) The transfer energy at the time of transfer was 2.2 J /
Same as Example 11 except that cm ² was used. (Example 20) The transfer energy at the time of transfer was 2.4 J /
Same as Example 11 except that cm ² was used.

(Comparative Example 3) The same as Example 11 except that the transfer energy at the time of transfer was 0.2 J / cm 2. (Comparative Example 4) The transfer energy at the time of transfer is 0.4 J / c.
Same as Example 11 except that m2 was used. Table 1 shows the observation results of the above Examples 1 to 20 and Comparative Examples 1 to 4, that is, the relationship between the transfer energy and the presence or absence of the transfer layer on the substrate.

[0060]

[Table 1]

Example 21 On the organic LED layer formed by the transfer method in Examples 1 to 10, a resistance heating vapor deposition apparatus was used to mask calcium having a width of 100 μm so as to be orthogonal to ITO. Vapor deposition. The film thickness of calcium at this time was 30 nm. Subsequently, silver was deposited on calcium to a thickness of 300 nm using the same mask as above, and sealed with glass to fabricate an organic LED element. Next, a voltage was applied to the organic LED by a DC power source, and the electrical characteristics of the device were measured. The result is shown by the curve (a) in FIGS. 4 and 5.

(Embodiment 22) Embodiments 11 to 20
On the organic LED layer formed by the transfer method in 1., using a resistance heating vapor deposition device, 100 is formed so as to be orthogonal to indium.
Mask IDIXO with a width of μm. I at this time
The film thickness of DIXO was 150 nm. Then, it sealed with glass and produced the organic LED element. Next, a voltage was applied to the organic LED by a DC power source, and the electrical characteristics and life of the device were measured. The result is shown by the curve (b) in FIGS. 4 and 5.

(Example 23) An alumina substrate is used as a substrate. On this substrate, due to decomposition of SiH ₄ LP-
An α-Si film having a film thickness of 50 nm is formed by the CDV method,
After that, α-Si is polycrystallized by the solid layer growth method.

Next, the Poly-Si film consisting of the channel part and the source / drain part is etched, and p-Si is thermally oxidized at 1000 ° C. or more as a gate insulating film to form SiO ₂ having a film thickness of 100 nm.

After that, Al is formed as a gate electrode by sputtering. Then, the gate electrode is patterned. Also, the lower electrode of the capacitor was processed. After that, the side surface of the gate electrode is anodized to form an offset portion, and then the source / drain portions are heavily doped with phosphorus by an ion implantation method.

A scanning line is formed, and thereafter, a film of SiO ₂ having a thickness of 300 nm is formed as an interlayer insulating film. Further, the source and the common electrode are formed, the connection electrode is formed from the drain part of the active layer of the thin film transistor to the central part of the pixel by the sputtering method using the aluminum target, and the upper electrode of the capacitor is formed. A Poly-Si TFT was formed.

Next, as a flattening film, SiO ₂ having a film thickness of 3 is formed.
A μm film is formed. Next, a resist is applied on this flattening film, and a pattern is formed by penetrating the contact holes by a photolithography method, and then etching is performed, so that the opening has a shape wider on the pixel side than on the substrate side. Open contact holes. Here, the contact hole was provided in the central portion of the pixel. As a result, the current can be evenly supplied to the pixels.

Next, silver is deposited as a pixel electrode on this insulating film by a 3 μm sputtering method. Next, this is 4μ
By polishing by a thickness of m, the insulating film and the contact hole are flattened.

Next, as the second electrode, calcium is deposited to a thickness of 1 nm by the resistance vapor deposition method. Next, as an insulating film, Si
O ₂ is formed to 200 nm. Next, by polishing the surface, the insulating film remains as partition walls only between the pixel electrodes, and the insulating film and the pixel electrodes can be planarized at the same time.

Thus, as shown in FIG. 4 (a),
The second electrode 10 separated by the partition wall 16 is obtained on the substrate 8 having the TFT. This makes it possible to prevent the deterioration of the element due to the electric field concentration at the edge portion of the pixel electrode, and even when the organic LED layer is formed by the transfer method, the base film completely adheres to the substrate,
It is possible to prevent the non-transferred portion of the organic LED layer from occurring.

Next, a 0.1 mm thick polyethylene terephthalate film was used as a base material film as a donor film for forming red light emitting pixels, and a thermosetting epoxy resin having carbon particles mixed therein as a heat conversion layer was added to this film at a thickness of 5 μm. The film thickness is coated and cured at room temperature.

Next, a poly-α-methylstyrene film is formed as a heat propagation and peeling layer by coating to a film thickness of 1 μm, and UV light having a wavelength of 177 nm is irradiated for 5 minutes to prepare a base film.

A hole transport layer having a thickness of 50 nm is formed on this base film by using a coating solution for forming a hole transport layer with a microgravure coater. Here, as the hole transport layer forming coating liquid, PEDOT / PSS was added to pure water with a solid content of 1 wt.
It was used after being melted in%. The viscosity of the coating liquid at this time is 4.6c.
It was ps.

Next, this film was heated at 110 ° C. for 5 minutes.
The solvent in the transfer layer is removed by heating in a high-purity nitrogen atmosphere, and then a coating liquid for forming a red light emitting layer is formed thereon to form a 75 nm light emitting layer using a microgravure coater.
Here, as the coating liquid for forming the red light emitting layer, CN-PPV is used.
Was dissolved in chloroform at a solid content of 2 wt% and used.
The viscosity of the coating liquid at this time was 2.6 cps.

Next, this film was heated at 110 ° C. for 5 minutes.
The solvent in the transfer layer is removed by heating in a high-purity nitrogen atmosphere to obtain a red-emitting pixel forming donor film. That is, as shown in FIG. 3A, the donor film R having the red light emitting pixel transfer layer 13 on the base film 6 is obtained.

Next, as a donor film for forming green light emitting pixels, a polyethylene terephthalate film having a film thickness of 0.1 mm was used as a substrate film, and a thermosetting epoxy resin having carbon particles mixed as a heat conversion layer was added to this film at a thickness of 5 μm. The film thickness is coated and cured at room temperature.

Next, a poly-α-methylstyrene film is formed as a 1 μm-thick film as a heat transfer and peeling layer, and UV light having a wavelength of 177 nm is irradiated for 5 minutes to prepare a base film. On the base film, using a hole transport layer forming coating solution, a microgravure coater
A 0 nm hole transport layer is formed. Here, as the hole transport layer forming coating liquid, PEDOT / PSS was used after being dissolved in pure water at a solid content of 1 wt%. The viscosity of the coating liquid at this time was 4.6 cps.

Next, this film was heated at 110 ° C. for 5 minutes.
The solvent in the transfer layer is removed by heating in a high-purity nitrogen atmosphere, and then a coating solution for forming a green light emitting layer is formed thereon and a 75 nm light emitting layer is formed using a microgravure coater.
Here, as the green light emitting layer forming coating liquid, pre-PP is used.
V was dissolved in methanol at a solid content of 2 wt% and used.
The viscosity of the coating liquid at this time was 3.6 cps.

Next, this film was heated at 110 ° C. for 5 minutes,
By heating in a high-purity nitrogen atmosphere to remove the solvent in the transfer layer, pre-PPV is converted into PPV to form a donor film for forming a green light emitting pixel. That is, as shown in FIG. 3D, the donor film G including the green light emitting pixel transfer layer 14 on the base film 6 is obtained.

Next, as a donor film for forming blue light emitting pixels, a polyethylene terephthalate film having a film thickness of 0.1 mm was used as a base film, and a thermosetting epoxy resin having carbon particles mixed as a heat conversion layer was added to this film at 5 μm. The film thickness is coated and cured at room temperature.

Next, a poly-α-methylstyrene film is formed as a heat propagation and peeling layer by coating to a film thickness of 1 μm, and UV light having a wavelength of 177 nm is irradiated for 5 minutes to prepare a base film. On the base film, using a hole transport layer forming coating solution, a microgravure coater
A 0 nm hole transport layer is formed. Here, as the hole transport layer forming coating liquid, PEDOT / PSS was used after being dissolved in pure water at a solid content of 1 wt%. The viscosity of the coating liquid at this time was 4.6 cps.

Next, this film was heated at 110 ° C. for 5 minutes.
The solvent in the transfer layer is removed by heating in a high-purity nitrogen atmosphere, and then a blue light-emitting layer forming coating liquid is formed thereon to form a 75-nm light emitting layer using a microgravure coater. Here, as the blue light emitting layer forming coating liquid, PDAF is used.
Was dissolved in xylene at a solid content of 1 wt% and used. The viscosity of the coating liquid at this time was 6.6 cps.

Next, this film was heated at 110 ° C. for 5 minutes,
The solvent in the transfer layer is removed by heating in a high-purity nitrogen atmosphere to obtain a blue light emitting pixel forming donor film. That is, as shown in FIG. 3G, the donor film B including the blue light emitting pixel transfer layer 15 on the base film 6 is obtained.

Next, as shown in FIG. 3B, the substrate 8
Affix the red light emitting pixel forming donor film R to
Transfer energy is 1.2 with 13W YAG laser 12.
J / cm ² is adjusted, and a desired position is scanned, so that the red light-emitting pixel is changed to pS as shown in FIG. 3C.
i Pattern transfer is performed on the substrate on which the TFT is formed. Similarly, pattern transfer is performed for green light emitting pixels as shown in FIGS. 3D to 3F and for blue light emitting pixels as shown in FIGS. 3G to 3I.

Next, as shown in FIG. 3 (j), as the first electrode 9, IDIXO is formed on the entire surface by sputtering so as to have a film thickness of 150 nm at room temperature, and is formed of a transparent electrode.
1 The electrode 9 is formed. Here, the formed transparent electrode has a surface resistance of <30 Ω / □ and a transmittance of> 80% (550 n
m), flatness: ± 2%. Next, as shown in (k) of FIG. 3, an epoxy resin is spin-coated on the entire first electrode 9 to a film thickness of 1 μm to form a sealing film 17, and a polarizing plate is formed on the sealing film. Provided and completed the organic LED display panel. Here, the steps from the production of the donor film for forming the red, green, and blue light emitting pixels to the transfer, the formation of the first electrode, and the sealing are performed for the purpose of preventing the deterioration of the organic layer and the electrodes.
It was carried out in an inert gas.

[0086]

According to the present invention, a donor film for an organic LED having a photothermal conversion layer and a transfer layer laminated on a base film is placed on a substrate, and transfer energy is transferred from the base film side of the organic LED donor film. In the method for manufacturing an organic LED display panel in which the transfer layer is transferred onto the substrate by irradiating the organic light, the peak value of the transfer energy is set to 0.6 to 1.8 J / cm ^2, and the organic L
It is possible to prevent the emission characteristics and life of the ED display panel from being shortened.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing the principle of a transfer method of the present invention.

FIG. 2 is a cross-sectional view of a donor film of this invention.

FIG. 3 is a process drawing showing a method for manufacturing an organic LED display panel of the present invention.

FIG. 4 is a graph showing a relationship between transfer energy and luminous efficiency according to an example of the present invention.

FIG. 5 is a graph showing a relationship between transfer energy and life according to an embodiment of the present invention.

[Explanation of symbols]

1 Base film 2 Photothermal conversion layer 3 Transfer layer 4 Heat transfer layer 5 Gas generation layer 6 base film 7 Donor film 8 substrates 9 First electrode 10 Second electrode 12 laser light 13 Red light emitting pixel transfer layer 14 Green light emitting pixel transfer layer 15 Blue light emitting pixel transfer layer 16 Partition (insulating film) 17 Sealing film

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shinji Yamana             22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka             Inside the company F term (reference) 3K007 AB04 AB11 AB18 BA06 BB07                       CB01 DB03 FA01

Claims (6)

[Claims] 1. A step of placing a donor film for an organic LED, which comprises a base film, a photothermal conversion layer sequentially laminated on the base film, and a transfer layer on a substrate so that the transfer layer is in contact, and from the side of the base film. Or a step of transferring the transfer layer onto the substrate by radiating transfer energy by heat, wherein the peak value of the transfer energy is 0.6 to 1.8.
A method for manufacturing an organic LED display panel, which is controlled to J / cm ² . 2. A donor film for an organic LED used in the method of manufacturing an organic LED display panel according to claim 1, wherein the transfer layer is in contact with a substrate and is made of an organic or inorganic material having a melting point of 300 ° C. or lower. Organic L on the side
Donor film for ED. 3. A donor film for an organic LED used in the method for manufacturing an organic LED display panel according to claim 1, wherein the transfer layer has a layer made of an organic material having a melting point of 300 ° C. or lower on a side in contact with the substrate. A donor film for an organic LED, characterized in that the organic material comprises one of a hole injecting and transporting material and an electron injecting and transporting material. 4. A substrate used in the method for manufacturing an organic LED display panel according to claim 1, wherein the substrate has an organic or inorganic material layer having a melting point of 300 ° C. or lower laminated on the surface thereof. And the substrate. 5. A substrate used in the method for manufacturing an organic LED display panel according to claim 1, wherein the substrate has an organic material layer having a melting point of 300 ° C. or lower laminated on the surface thereof, and the organic material layer is a hole. A substrate comprising one of an injecting and transporting material and an electron injecting and transporting material. 6. An organic LED display panel manufactured by using the manufacturing method according to claim 1.