JP2003167003A - Probe needle for probe card - Google Patents
Probe needle for probe cardInfo
- Publication number
- JP2003167003A JP2003167003A JP2001366290A JP2001366290A JP2003167003A JP 2003167003 A JP2003167003 A JP 2003167003A JP 2001366290 A JP2001366290 A JP 2001366290A JP 2001366290 A JP2001366290 A JP 2001366290A JP 2003167003 A JP2003167003 A JP 2003167003A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- ptfe
- probe needle
- probe
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 49
- 238000007747 plating Methods 0.000 claims abstract description 81
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 52
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 52
- 229910018104 Ni-P Inorganic materials 0.000 claims description 8
- 229910018536 Ni—P Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 16
- 230000003647 oxidation Effects 0.000 abstract description 10
- 238000007254 oxidation reaction Methods 0.000 abstract description 10
- 238000005299 abrasion Methods 0.000 abstract description 4
- 230000000717 retained effect Effects 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- 239000000463 material Substances 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 and in particular Substances 0.000 description 2
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ上の
集積回路チップの通電検査をするためのプローブカード
用プローブ針に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe needle for a probe card, which is used for inspecting the electric conduction of an integrated circuit chip on a semiconductor wafer.
【0002】[0002]
【従来の技術】半導体ウエハの製造工程において集積回
路チップの通電検査(ウエハテスト)をするためのプロ
ーブカード用プローブ針は、プリント配線基板(図示せ
ず)に数十本から数百本が配設されるものであって、そ
の材質としては、硬くて弾力性のあるタングステン、レ
ニウムタングステン、ベリリウム銅などが使用されてお
り、特に、耐摩耗性および強靱性に優れたタングステン
が多用されている。しかしながら、タングステンは、耐
摩耗性、弾力性、硬度等に優れ、強靱性があって直径数
十ミクロンという細い線材で構成するプローブ針に適し
た材料であるが、酸化しやすくて、プローブ針として集
積回路の電極とコンタクトされ通電されたときの摩擦熱
や接触抵抗による発熱で先端部の温度が上昇することに
よって酸化が進み、また、集積回路に蒸着されているア
ルミニウムと反応し、数千回から数万回のコンタクトで
針先端部に酸化アルミニウムが発生付着する。2. Description of the Related Art Dozens to hundreds of probe needles for a probe card for conducting electric current inspection (wafer test) of integrated circuit chips in a semiconductor wafer manufacturing process are arranged on a printed wiring board (not shown). As the material, hard and elastic tungsten, rhenium tungsten, beryllium copper, etc. are used as the material, and in particular, tungsten having excellent wear resistance and toughness is widely used. . However, although tungsten is a material suitable for a probe needle that is excellent in wear resistance, elasticity, hardness, etc., has a toughness, and is composed of a thin wire rod with a diameter of several tens of microns, it easily oxidizes and is used as a probe needle. Oxidation proceeds as the temperature at the tip rises due to frictional heat when contacting the electrodes of the integrated circuit and current is applied, and heat generated by contact resistance, and reacts with aluminum deposited on the integrated circuit several thousand times. After a few tens of thousands of contacts, aluminum oxide is generated and attached to the tip of the needle.
【0003】このようにプローブ針の先端部の酸化が進
み、酸化アルミニウムが付着すると、針先端部表面の接
触抵抗が大きくなり導電性が低下してウエハテストに支
障を来すため、先端部を研磨する等のメンテナンスを行
う必要がある。従来はこのメンテナンスを、使用状況に
もよるが、通常、数千回から数万回のコンタクトで一度
の割合で行っており、これが全自動で行われるウエハテ
ストの問題点になっていた。When the tip portion of the probe needle is oxidized and aluminum oxide is attached in this manner, the contact resistance on the surface of the needle tip portion is increased and the conductivity is lowered to hinder the wafer test. It is necessary to perform maintenance such as polishing. Conventionally, this maintenance is normally performed once every several thousand to tens of thousands of contacts, depending on the usage status, which has been a problem in the wafer test performed automatically.
【0004】こうした問題点を解決するため、特に耐酸
化性を改善する方法として、例えば特開平11−380
39号公報に示されているように、金、白金、パラジウ
ムなどの非酸化性金属をプローブ針の先端部に接合する
方法が考えられ、また、これら非酸化性金属はタングス
テンに比べて耐摩耗性に乏しく接合自体も難しいという
ことから、プローブ針の先端部に電気メッキ等のメタラ
イズにより非酸化性金属の被膜を形成し、その後、非酸
化性の雰囲気あるいは真空中で加熱して、非酸化性金属
の母材であるタングステン中に拡散させることにより、
タングステン本体の耐摩耗性や強靱性は維持しながら耐
酸化性および導電性に優れたプローブ針に改質する方法
も考えられている。As a method for improving the oxidation resistance in order to solve these problems, for example, JP-A-11-380 is used.
As disclosed in Japanese Patent Laid-Open No. 39, a method of joining a non-oxidizing metal such as gold, platinum or palladium to the tip of a probe needle can be considered, and these non-oxidizing metals are more wear resistant than tungsten. Since it is poor in resistance and the bonding itself is difficult, a non-oxidizing metal film is formed on the tip of the probe needle by metallization such as electroplating, and then heated in a non-oxidizing atmosphere or in a vacuum to non-oxidize. By diffusing into tungsten, which is the base material of the functional metal,
A method of modifying the probe body into a probe needle having excellent oxidation resistance and conductivity while maintaining the wear resistance and toughness of the tungsten body has been considered.
【0005】しかし、上記の方法はいずれにしてもコス
ト的にも作業的にも実用的ではなく、また酸化アルミニ
ウムの付着を防止することができない。However, any of the above methods is not practical in terms of cost and work, and the adhesion of aluminum oxide cannot be prevented.
【0006】上記課題に鑑み、本出願人は先に、先端部
表面の酸化を防止するとともに酸化アルミニウムの付着
を防止するために、先端部にPTFE(ポリテトラフル
オロエチレン)を含有するNiメッキすなわちPTFE
含有Niメッキを施したプローブカード用プローブ針を
提案した(特開2001−74777号公報:以下、先
願発明という)。In view of the above-mentioned problems, the present applicant has previously made a Ni plating containing PTFE (polytetrafluoroethylene) at the tip to prevent the oxidation of the surface of the tip and the adhesion of aluminum oxide. PTFE
A probe needle for a probe card plated with nickel containing Ni has been proposed (JP 2001-74777 A: hereinafter referred to as prior invention).
【0007】上記先願発明によって、数千回から数万回
のコンタクトに一度の割合で研磨等のメンテナンスが必
要であった従来品に対し、30万回〜50万回のコンタ
クトでも導電性が低下せず、またメンテナンスの回数及
びそれに要する時間を大幅に低減することができた。According to the above invention of the prior application, the conductivity is maintained even after 300,000 to 500,000 contacts, as compared with the conventional product, which requires maintenance such as polishing once every thousands to tens of thousands of contacts. It did not decrease, and the number of maintenances and the time required therefor could be significantly reduced.
【0008】しかし、本発明者等は、30万回〜50万
回のコンタクト数に満足することなく、更なるコンタク
ト数の向上を図るべく鋭意研究を重ねた結果、PTFE
含有Niメッキ層の耐摩耗性がコンタクト数に大きく影
響していることを知見して、本発明を成すに至った。[0008] However, the inventors of the present invention have not been satisfied with the number of contacts of 300,000 to 500,000 times, and as a result of earnest studies for further improvement of the number of contacts, the result of PTFE
The present invention has been accomplished by finding that the wear resistance of the contained Ni plating layer greatly affects the number of contacts.
【0009】すなわち、集積回路にはアルミニウムが蒸
着されているが、その最表面は酸化アルミニウムで覆わ
れている。この状態でプローブ針をコンタクトさせて通
電検査を行っても検査精度にバラツキが発生するため、
プローブ針をコンタクトさせた状態で面方向にスライド
させて表面の酸化スケール層を削り取る必要がある。こ
のとき、削り取られた酸化アルミニウムはNiメッキに
含有したPTFEの滑り効果によりプローブ針先端部に
付着することなく脱落していくが、Niメッキ層のビッ
カース硬度がHv250〜300であるのに対し、酸化
アルミニウムはHv1000〜2000と非常に高いた
め、削り取られた酸化アルミニウムによりNiメッキ層
が徐々に摩耗していくのである。Niメッキ層が摩耗す
ると滑り性が低下して、酸化アルミニウムがプローブ針
表面に堆積するようになり導電性が低下してしまう。That is, although aluminum is vapor-deposited on the integrated circuit, the outermost surface thereof is covered with aluminum oxide. In this state, even if the probe needle is contacted and a current test is performed, the inspection accuracy will vary.
It is necessary to remove the oxide scale layer on the surface by sliding in the surface direction with the probe needle in contact. At this time, the scraped-off aluminum oxide drops off without adhering to the probe needle tip portion due to the sliding effect of PTFE contained in the Ni plating, whereas the Ni plating layer has a Vickers hardness of Hv250-300. Since aluminum oxide has a very high Hv of 1000 to 2000, the Ni plating layer is gradually worn by the scraped aluminum oxide. When the Ni plating layer is worn, the slipperiness is reduced, and aluminum oxide is deposited on the probe needle surface, resulting in reduced conductivity.
【0010】従って、本発明は、プローブ針の先端部表
面の酸化、および酸化アルミニウムの付着を防止するこ
とは勿論のこと、耐摩耗性に優れたPTFE含有メッキ
を有するプローブカード用プローブ針を提供することを
課題とする。Accordingly, the present invention provides a probe needle for a probe card having a PTFE-containing plating excellent in wear resistance as well as preventing oxidation of the tip surface of the probe needle and adhesion of aluminum oxide. The task is to do.
【0011】[0011]
【課題を解決するための手段】本発明は、プローブカー
ド用プローブ針の先端部の少なくとも端面が、PTFE
を含有するNi−Bメッキ、PTFE含有Ni−Wメッ
キ、又は時効処理したPTFE含有Ni−Pメッキ(以
下、「各種PTFE含有メッキ」という)のいずれかで
覆うことにより上記課題を解決するものである。According to the present invention, at least the end surface of the tip of the probe needle for a probe card is made of PTFE.
The above problem can be solved by covering with any one of Ni-B plating containing PTFE, Ni-W plating containing PTFE, or Ni-P plating containing PTFE aged (hereinafter referred to as "various PTFE-containing plating"). is there.
【0012】プローブ針の先端部の端面が上記各種PT
FE含有メッキによって覆われると、導電性は良好で、
かつ、集積回路に接触する端面の酸化が防止され、ま
た、PTFEによりすべり性が向上して酸化アルミニウ
ムの付着がほぼ完全に防止され、安定した導電性が保持
できる。さらに、PTFE含有Ni−Bメッキは硬さが
Hv600〜800で、PTFE含有Ni−Wメッキは
Hv550〜600と、従来のPTFE含有Niメッキ
の硬さHv250〜300に比べて硬く、また、PTF
E含有Ni−Pメッキも時効処理することによって硬度
をHv450〜550まで高めることができるので、削
り取られた酸化アルミニウムによる各種PTFE含有メ
ッキ層の摩耗をより小さく抑えることができる。The end face of the tip of the probe needle has the above-mentioned various PTs.
When covered with FE-containing plating, it has good conductivity,
In addition, the oxidation of the end surface in contact with the integrated circuit is prevented, the sliding property is improved by PTFE, and the adhesion of aluminum oxide is almost completely prevented, so that stable conductivity can be maintained. Further, the hardness of PTFE-containing Ni-B plating is Hv600-800, and the hardness of PTFE-containing Ni-W plating is Hv550-600, which is harder than the hardness Hv250-300 of the conventional PTFE-containing Ni plating.
Since the hardness of E-containing Ni-P plating can be increased to Hv 450 to 550 by aging treatment, abrasion of various PTFE-containing plating layers due to scraped aluminum oxide can be further suppressed.
【0013】プローブ針の母材が例えばタングステンの
場合に、下地として例えばNi又はCuメッキを施すの
がよく、それにより、本メッキである各種PTFE含有
メッキの付着性を高めることができる。そして、その場
合のNi又はCuメッキは特に電気メッキであるのがよ
く、それにより、本メッキと母材とを完全に密着させる
ことができる。また下地のNi又はCuメッキを厚み
0.5〜2μmとし、各種PTFE含有メッキを厚み
0.5〜5μmとするのがよい。下地としてのNi又は
Cuメッキは、各種PTFE含有メッキの付着性を確保
するのに少なくともストライク浴の厚みである0.5μ
m以上であることが必要で、2μmを越える厚みはコス
ト的、時間的に無駄である。また、各種PTFE含有メ
ッキの場合は、滑り性および耐摩耗性を確保するのに厚
み0.5μm以上が必要であり、5μmより厚くてもN
i又はCuメッキ同様、コスト的、時間的に無駄であ
る。When the base material of the probe needle is, for example, tungsten, Ni or Cu plating, for example, is preferably applied as a base, whereby the adhesion of various PTFE-containing plating, which is the main plating, can be enhanced. The Ni or Cu plating in that case is particularly preferably electroplating, whereby the main plating and the base material can be completely adhered. Further, it is preferable that the underlying Ni or Cu plating has a thickness of 0.5 to 2 μm and the various PTFE-containing plating has a thickness of 0.5 to 5 μm. The Ni or Cu plating as a base has a thickness of at least 0.5 μ of the strike bath in order to secure the adhesion of various PTFE-containing plating.
It is necessary to be at least m, and the thickness exceeding 2 μm is wasteful in terms of cost and time. In addition, in the case of various PTFE-containing plating, a thickness of 0.5 μm or more is required to secure slipperiness and wear resistance, and even if thicker than 5 μm, N
Like i or Cu plating, it is wasteful in terms of cost and time.
【0014】[0014]
【発明の実施の形態】以下、本発明の実施の形態の一例
を図面に基づいて説明する。DETAILED DESCRIPTION OF THE INVENTION An example of an embodiment of the present invention will be described below with reference to the drawings.
【0015】図1〜2は本発明の実施の形態の一例を示
すもので、図1はプローブ針の途中仕様を示す平面図、
図2はプローブ針の最終仕様を示す平面図である。1 and 2 show an example of an embodiment of the present invention, and FIG. 1 is a plan view showing an intermediate specification of a probe needle,
FIG. 2 is a plan view showing the final specifications of the probe needle.
【0016】図1において、プローブ針1は、母材が例
えばタングステンで、線径aが0.1〜0.7mm、全
長bが25〜90mmである。そして、先端側が所定長
さc(例えば0.3〜6mm)にわたって直線テーパ状
に尖頭加工され、端面の径dが例えば0.02mm以下
とされる。In FIG. 1, the probe needle 1 has a base material of, for example, tungsten, a wire diameter a of 0.1 to 0.7 mm, and a total length b of 25 to 90 mm. Then, the tip side is sharpened into a linear taper shape over a predetermined length c (for example, 0.3 to 6 mm), and the end surface has a diameter d of 0.02 mm or less.
【0017】こうして加工されたプローブ針1は、図1
のストレートの状態で、まず、電気メッキによってNi
メッキを施し、そのNiメッキ層を下地として、針先端
部にPTFE含有Ni−Bメッキを施す。上記下地とし
てのメッキはNiメッキ以外にCuメッキでもよく、そ
の他Znメッキ等の金属メッキでもよいが、各種PTF
E含有メッキとの付着性からNiメッキが最も好まし
い。また、前記針先端部に施すメッキは、PTFE含有
Ni−WメッキやPTFE含有Ni−Pメッキでもよ
い。さらに、PTFE含有Ni−Wメッキは電気メッ
キ、PTFE含有Ni−BメッキおよびPTFE含有N
i−Pメッキは無電解メッキが好ましく、PTFE含有
Ni−Pメッキは、250〜350℃×1時間程度の加
熱処理(時効処理)を施す。The probe needle 1 thus processed is shown in FIG.
In the straight state, first, by electroplating Ni
Plating is performed, and the needle tip portion is plated with PTFE-containing Ni-B using the Ni plating layer as a base. The plating as the base may be Cu plating in addition to Ni plating, and may be metal plating such as Zn plating.
Ni plating is the most preferable in terms of adhesion to the E-containing plating. The plating applied to the needle tip may be PTFE-containing Ni-W plating or PTFE-containing Ni-P plating. Further, PTFE-containing Ni-W plating is electroplating, PTFE-containing Ni-B plating, and PTFE-containing N
The i-P plating is preferably electroless plating, and the PTFE-containing Ni-P plating is subjected to heat treatment (aging treatment) at 250 to 350 ° C. for about 1 hour.
【0018】図1において、2はNiメッキ層であり、
3はPTFE含有Ni−Bメッキである。図示の例で
は、母材全面をNiメッキ層2で覆い、尖頭加工部分か
ら一部針胴部にかかる範囲にPTFE含有Ni−Bメッ
キ層3を形成している。なお、PTFE含有Ni−Bメ
ッキ層3の範囲は、上記図示の例に限るものではなく、
少なくとも針先端部の端面を含み、針胴部のプリント配
線に半田付けする部分にかからない範囲で適宜変更が可
能である。また、図示の例では、NiメッキはPTFE
含有Ni−Bメッキの下地であるとともに、針胴部での
半田付け性を向上させることを目的として全面に施して
いるが、Niメッキは必ずしも同時に全面に施す必要は
なく、PTFE含有Ni−Bメッキの下地部分と半田付
けの部分とで別々にNiメッキを施してもよいものであ
る。In FIG. 1, 2 is a Ni plating layer,
3 is PTFE-containing Ni-B plating. In the illustrated example, the entire surface of the base material is covered with the Ni plating layer 2, and the PTFE-containing Ni-B plating layer 3 is formed in the range extending from the pointed portion to a part of the needle barrel. The range of the PTFE-containing Ni-B plating layer 3 is not limited to the above-mentioned example,
It can be appropriately changed within a range including at least the end surface of the needle tip portion and not reaching the portion to be soldered to the printed wiring of the needle barrel portion. Also, in the illustrated example, the Ni plating is PTFE.
Although it is the base of the Ni-B plating containing, it is applied to the entire surface for the purpose of improving the solderability in the needle barrel, but the Ni plating does not necessarily have to be applied to the entire surface at the same time. Ni plating may be separately applied to the plating base portion and the soldering portion.
【0019】下地としてのNiメッキは、PTFE含有
Ni−Bメッキの付着量を確保するために厚み0.5〜
2μmとするのがよい。2μmを越える厚みはコスト
的、時間的に無駄となる。また、PTFE含有Ni−B
メッキは、PTFEによる滑り性を確保するために厚み
0.5〜5μmとするのがよい。この場合も5μmを越
える厚みはコスト的、時間的に無駄となる。The Ni plating as the base has a thickness of 0.5 to 0.5 in order to secure the amount of the PTFE-containing Ni-B plating attached.
2 μm is preferable. The thickness exceeding 2 μm is wasted in terms of cost and time. In addition, PTFE-containing Ni-B
It is preferable that the plating has a thickness of 0.5 to 5 μm in order to secure slipperiness by PTFE. Also in this case, the thickness exceeding 5 μm is wasted in terms of cost and time.
【0020】こうしてPTFE含有Ni−Bメッキを施
した後、プローブ針1は、図2に示すように尖頭加工部
分の先端をカギ形に曲げて使用に供する。After the PTFE-containing Ni-B plating is applied in this way, the probe needle 1 is used by bending the tip of the pointed portion into a hook shape as shown in FIG.
【0021】プローブ針1は、先端部がPTFE含有N
i−Bメッキ層3によって覆われることにより、電導性
が良好で、かつ、集積回路に接触する端面の酸化が防止
され、また、PTFEにより滑り性が向上して酸化アル
ミニウムの付着がほぼ完全に防止され、安定した導電性
を保持できる。さらに、PTFE含有Ni−Bメッキ
は、従来のNiメッキに比べ高い硬度を有するので削り
取られた酸化アルミニウムによるメッキ層の摩耗をより
小さく抑えることができ、従来に比べコンタクト数を大
幅に向上させることが可能となる。The probe needle 1 has a PTFE-containing N
By being covered with the i-B plating layer 3, the conductivity is good, the oxidation of the end face in contact with the integrated circuit is prevented, and the sliding property is improved by PTFE so that the aluminum oxide is almost completely adhered. It can be prevented and can maintain stable conductivity. Further, since the PTFE-containing Ni-B plating has a higher hardness than the conventional Ni plating, it is possible to further suppress the abrasion of the plating layer due to the scraped aluminum oxide, and to greatly improve the number of contacts as compared with the conventional one. Is possible.
【0022】このプローブ針1を使用したプローブカー
ドで実際に通電検査を行った結果、従来のPTFE含有
Niメッキを施したもののコンタクト数30万回〜50
万回に対し、50万回〜70万回と約1.5倍のコンタ
クトでも導電性が低下しないことが確認できた。As a result of actually conducting a current test with a probe card using the probe needle 1, the number of contacts of the conventional PTFE-containing Ni plating is 300,000 to 50 times.
It was confirmed that the conductivity did not decrease even with a contact that was about 1.5 times as many as 500,000 to 700,000 times with respect to 10,000 times.
【0023】なお、本発明は、タングステンの他、レニ
ウムタングステン、ベリリウム銅などを母材とするプロ
ーブ針に適用することができる。The present invention can be applied to a probe needle having rhenium tungsten, beryllium copper or the like as a base material in addition to tungsten.
【0024】また、本発明は、先端を尖頭加工しないプ
ローブ針に対しても同様に適用できる。The present invention can also be applied to a probe needle whose tip is not sharpened.
【0025】[0025]
【発明の効果】本発明のプローブ針は、先端部がPTF
E含有Ni−Bメッキ、PTFE含有Ni−Wメッキ、
又は時効処理を施したPTFE含有Ni−Pメッキによ
って覆われるので、電導性が良好で、かつ、集積回路に
接触する端面の酸化が防止され、また、PTFEにより
滑り性が向上して酸化アルミニウムの付着がほぼ完全に
防止され、安定した導電性を保持できる。さらに、PT
FE含有Ni−Bメッキ、PTFE含有Ni−Wメッ
キ、時効処理を施したPTFE含有Ni−Pメッキはい
ずれも、従来のNiメッキに比べ高い硬度を有するので
メッキ層の摩耗をより小さく抑えることができ、従来に
比べコンタクト数を大幅に向上させることが可能とな
る。その結果、メンテナンスの回数及びそれに要する時
間を大幅に低減することができることにより、スペアの
在庫が少なくて済み、検査コストひいては製造コストを
大幅に低減できる。The probe needle of the present invention has a PTF tip.
E-containing Ni-B plating, PTFE-containing Ni-W plating,
Alternatively, since it is covered with the aging-treated PTFE-containing Ni-P plating, the electrical conductivity is good, and the oxidation of the end face in contact with the integrated circuit is prevented. Adhesion is almost completely prevented, and stable conductivity can be maintained. Furthermore, PT
The FE-containing Ni-B plating, the PTFE-containing Ni-W plating, and the aged PTFE-containing Ni-P plating all have higher hardness than the conventional Ni plating, so that the wear of the plating layer can be further suppressed. Therefore, the number of contacts can be significantly improved as compared with the conventional case. As a result, the number of maintenances and the time required therefor can be significantly reduced, so that the stock of spares can be reduced, and the inspection cost and thus the manufacturing cost can be significantly reduced.
【図1】本発明の実施の形態の一例に係るプローブ針の
途中仕様を示す平面図である。FIG. 1 is a plan view showing an intermediate specification of a probe needle according to an example of an embodiment of the present invention.
【図2】図1のプローブ針の最終仕様を示す平面図であ
る。FIG. 2 is a plan view showing final specifications of the probe needle of FIG.
1 プローブ針 2 Niメッキ 3 PTFE含有Ni−Bメッキ 1 probe needle 2 Ni plating 3 PTFE-containing Ni-B plating
Claims (2)
有Ni−Bメッキ、PTFE含有Ni−Wメッキ、時効
処理を施したPTFE含有Ni−Pメッキのいずれかで
覆われたことを特徴とするプローブカード用プローブ
針。1. A probe, characterized in that at least the end face of the tip portion is covered with any one of PTFE-containing Ni-B plating, PTFE-containing Ni-W plating, and aged PTFE-containing Ni-P plating. Card probe needle.
含有Ni−Wメッキ又はPTFE含有Ni−Pメッキの
下地にNi又はCuメッキを施した請求項1記載のプロ
ーブカード用プローブ針。2. PTFE-containing Ni-B plating, PTFE
The probe needle for a probe card according to claim 1, wherein Ni or Cu plating is applied to a base of the containing Ni-W plating or the PTFE-containing Ni-P plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001366290A JP2003167003A (en) | 2001-11-30 | 2001-11-30 | Probe needle for probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001366290A JP2003167003A (en) | 2001-11-30 | 2001-11-30 | Probe needle for probe card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003167003A true JP2003167003A (en) | 2003-06-13 |
Family
ID=19176207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001366290A Pending JP2003167003A (en) | 2001-11-30 | 2001-11-30 | Probe needle for probe card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003167003A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006184081A (en) * | 2004-12-27 | 2006-07-13 | Kanai Hiroaki | Probe pin for probe card |
| US8287653B2 (en) * | 2007-09-17 | 2012-10-16 | Rave, Llc | Debris removal in high aspect structures |
| EP2690447A2 (en) | 2012-07-25 | 2014-01-29 | Nidec-Read Corporation | Inspection jig and contact |
| US10330581B2 (en) | 2007-09-17 | 2019-06-25 | Rave Llc | Debris removal from high aspect structures |
| US10384238B2 (en) | 2007-09-17 | 2019-08-20 | Rave Llc | Debris removal in high aspect structures |
| US10618080B2 (en) | 2007-09-17 | 2020-04-14 | Bruker Nano, Inc. | Debris removal from high aspect structures |
-
2001
- 2001-11-30 JP JP2001366290A patent/JP2003167003A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006184081A (en) * | 2004-12-27 | 2006-07-13 | Kanai Hiroaki | Probe pin for probe card |
| US11040379B2 (en) | 2007-09-17 | 2021-06-22 | Bruker Nano, Inc. | Debris removal in high aspect structures |
| US20130037053A1 (en) * | 2007-09-17 | 2013-02-14 | Rave, Llc | Debris Removal in High Aspect Structures |
| US8696818B2 (en) * | 2007-09-17 | 2014-04-15 | Rave Llc | Debris removal in high aspect structures |
| KR101428137B1 (en) * | 2007-09-17 | 2014-08-07 | 레이브 엘엘씨 | Debris removal in high aspect structures |
| US10330581B2 (en) | 2007-09-17 | 2019-06-25 | Rave Llc | Debris removal from high aspect structures |
| US10384238B2 (en) | 2007-09-17 | 2019-08-20 | Rave Llc | Debris removal in high aspect structures |
| US10618080B2 (en) | 2007-09-17 | 2020-04-14 | Bruker Nano, Inc. | Debris removal from high aspect structures |
| US8287653B2 (en) * | 2007-09-17 | 2012-10-16 | Rave, Llc | Debris removal in high aspect structures |
| US11391664B2 (en) | 2007-09-17 | 2022-07-19 | Bruker Nano, Inc. | Debris removal from high aspect structures |
| US11577286B2 (en) | 2007-09-17 | 2023-02-14 | Bruker Nano, Inc. | Debris removal in high aspect structures |
| US11964310B2 (en) | 2007-09-17 | 2024-04-23 | Bruker Nano, Inc. | Debris removal from high aspect structures |
| EP2690447A2 (en) | 2012-07-25 | 2014-01-29 | Nidec-Read Corporation | Inspection jig and contact |
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