JP2003037036A - Method and apparatus for aligning mask and wafer - Google Patents

Abstract

(57) Abstract: A high-precision alignment between a mask and a wafer can be realized by one microscope imaging device. A method of aligning a mask and a wafer in an exposure apparatus that disposes a mask on a wafer in proximity to the mask and transfers a mask pattern formed on the mask to a resist layer on the wafer. Mask mark M (M _X, M _Y) on the mask in a direction perpendicular to the mask and the surface of the wafer pallet mark MP (MP _X, MP _Y) on the wafer pallet and a microscope having two sets of imaging optical systems Images are taken simultaneously by the image pickup device, and the two-dimensional displacement between these marks is measured. Then, the mask and the wafer are relatively positioned based on the measured positional deviation amount.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask and wafer alignment method and apparatus, and more particularly to a mask in an exposure apparatus for transferring a mask pattern of a mask arranged in the vicinity of a semiconductor wafer onto a resist layer on the wafer at an equal size. The present invention relates to a wafer alignment method and apparatus.

[0002]

2. Description of the Related Art As a conventional exposure apparatus of this type, an electron beam proximity exposure apparatus has been proposed (US Pat. No. 5,831,
No. 272 (corresponding to Japanese Patent No. 2951947)).

FIG. 16 is a diagram showing the basic construction of the electron beam proximity exposure apparatus. This electron beam proximity exposure apparatus 1
0 is an electron beam source 14 that mainly generates an electron beam 15, an electron gun 12 that includes a lens 16 that makes the electron beam 15 a parallel beam, and a shaping aperture 18, and a main deflector 2.
2, 24 and sub-deflectors 26, 28, and is composed of a scanning means 20 for scanning an electron beam in parallel with the optical axis, and a mask 30.

A resist layer 42 is formed on the surface of the mask 30.
So that it is close to the wafer 40 (mask 30
And the wafer 40 are arranged such that the gap between them and the wafer 40 is, for example, 50 μm. In this state, when the mask 30 is vertically irradiated with an electron beam, the resist layer 42 on the wafer 40 is irradiated with the electron beam passing through the mask pattern of the mask 30.

Further, the scanning means 20 controls the deflection of the electron beam so that the electron beam 15 scans the entire surface of the mask 30, as shown in FIG. As a result, the mask pattern of the mask 30 is transferred to the resist layer 42 on the wafer 40 at the same size.

This electron beam proximity exposure apparatus 10 is shown in FIG.
As shown in FIG. 8, it is provided in the vacuum chamber 50.
Further, in the vacuum chamber 50, an electrostatic chuck 60 for adsorbing the wafer 40 and the wafer 40 adsorbed by the electrostatic chuck 60 are moved in two horizontal orthogonal two-axis directions (X direction and Y direction). At the same time, a wafer stage 70 for rotating in a horizontal plane is provided. The wafer stage 70 moves the wafer 40 by a predetermined amount each time the mask pattern transfer at the same size is completed, and thereby a plurality of mask patterns can be transferred onto one wafer 40. Reference numeral 80 denotes a mask stage that can move the mask 30 in the X and Y directions.

By the way, the wafer is exposed a plurality of times by using a plurality of masks having different mask patterns, thereby forming an integrated circuit. At the time of exposing each mask pattern, it is necessary to relatively align the mask and the wafer so that the mask pattern to be exposed has a predetermined positional relationship with the already-exposed mask pattern.

On the other hand, an oblique detection method is known as a conventional mask-wafer alignment method (Japanese Patent Laid-Open No. 11-
243048).

In the oblique detection method, an optical system is arranged so that a photographing optical axis is inclined with respect to a mask surface arranged close to a wafer, and a wafer mark for alignment provided on the wafer and a mask are arranged on the mask. The provided mask mark for alignment is imaged at the same time, the positional deviation between the marks is detected from the taken image, and the mask and the wafer are aligned so that this positional deviation becomes zero. There is.

In this oblique detection method, the microscope image pickup device can be arranged so as not to block the exposure, and it is not necessary to retract the optical system during the exposure, and each mark can be picked up even during the exposure. There is.

[0011]

However, in the above-mentioned conventional alignment method by the oblique detection method, one microscope image pickup device is used to set the wafer mark and the mask mark in one direction (that is, in the x direction and the y direction). There is a problem that only a positional deviation amount in one direction) can be measured, and as a result, a plurality of microscope image pickup devices must be arranged. That is, when aligning the mask and the wafer in the X and Y directions, two microscope image pickup devices must be provided, and when the mask and the wafer are also aligned in the rotational direction. Has the problem that three microscope imaging devices must be provided.

The present invention has been made in view of the above circumstances, and provides a mask-wafer alignment method and device capable of realizing highly accurate alignment of a mask and a wafer with a single microscope imaging device. The purpose is to provide.

[0013]

In order to achieve the above-mentioned object, the invention according to claim 1 of the present application is such that a mask is arranged close to a wafer, and a mask pattern formed on the mask is transferred to a resist layer on the wafer. In the aligning method of the mask and the wafer in the exposure apparatus, the first mark for alignment provided on the mask and the second mark for alignment provided on the pallet or the wafer on which the wafer is mounted. A step of simultaneously capturing an image of a mark and a mark in a direction orthogonal to a surface on which the mark is provided;
Of the first mark and the second mark obtained from the microscope image pickup device at the same time by using a microscope image pickup device having two sets of imaging optical systems capable of respectively focusing on the second mark and the second mark. Measuring the relative positional deviation amount between the first mark and the second mark based on the image signal of the second mark, and the mask and the wafer relative to each other based on the measured positional deviation amount. And a step of aligning.

That is, the microscope image pickup device can simultaneously pick up images of the respective marks from a direction orthogonal to the surface on which the first mark and the second mark are provided, and the respective marks are in focus. The obtained image signal can be obtained. Then, the relative positional deviation amount between the first mark and the second mark is measured based on the image signals of the first mark and the second mark which are simultaneously obtained from the microscope image pickup device. . That is, the two-dimensional positional deviation amount between the first mark and the second mark is measured by one microscope imaging device by imaging each mark from the direction orthogonal to the surface on which each mark is provided. You can Further, the positions of the first mark and the second mark are not measured with reference to the reference position of the microscope image pickup device (for example, the cross mark of the microscope), and the first mark obtained simultaneously from the microscope image pickup device. Since the relative positional deviation amount between the marks is measured based on the image signals of the second mark and the second mark, the positional deviation amount can be measured without being affected by the fluctuation of the reference position of the microscope image pickup device.

According to a second aspect of the present invention, the microscope image pickup device is fixed outside the exposure area in the exposure device, and the first mark and the second mark are included in the field of view of the microscope image pickup device at the time of the image pickup step. It is characterized in that the mask and the wafer are moved to put the mark.

According to a third aspect of the present invention, in the alignment step, the step of moving one of the mask and the wafer so that the measured positional deviation amount becomes zero, and the measured positional deviation amount Measuring the moving positions of the mask and the wafer at zero, moving the mask to the transfer position, the moving position of the mask moved to the transfer position, and the moving of the measured mask and wafer And a step of moving the wafer based on the obtained moving position of each die of the wafer, and a step of moving the wafer based on the obtained moving position of each die of the wafer. .

That is, when the positional relationship between the mask and the wafer is measured in advance at a position outside the exposure area, and then the mask is moved to the transfer position, the wafer is moved in accordance with the amount of movement to thereby move the wafer. Are aligned.

As described in claim 4 of the present application, two or more of each of the first mark and the second mark are provided, and one of the second marks is used as a reference for the first mark. The movement positions of the mask when the displacement amount of each mark is zero are respectively measured, and the rotation amount of the mask is calculated based on the movement positions of these masks, while one of the first marks is calculated. The moving position of the wafer is measured when the positional deviation amount of each of the second marks is zero with reference to one mark, and the rotation amount of the wafer is calculated based on these moving positions of the wafer. The step of obtaining the moving position of each die of the wafer includes the moving position of the mask moved to the transfer position,
A moving position and a rotating amount of the wafer for positioning each die of the wafer at the time of transfer based on the measured moving positions of the mask and the wafer and the calculated rotating amount of the mask and the wafer. There is.

That is, the positions of a plurality of marks of the second mark are measured with reference to one of the first marks, and the amount of rotation of the wafer is calculated based on these measured positions. Then, the positions of the plurality of marks of the first mark are measured with reference to one of the second marks, and the rotation amount of the mask is calculated based on these measured positions. In consideration of the rotation amount of the wafer and the rotation amount of the mask thus obtained, the moving position of each die and the rotation amount of the wafer necessary when aligning each die of the wafer with the transfer position are obtained. There is.

According to a fifth aspect of the present invention, the position aligning step includes a step of measuring the moving positions of the mask and the wafer when the positional deviation amount is measured, and a step of moving the mask to a transfer position. A step of obtaining a moving position of each die of the wafer at the time of transfer based on the moving position of the mask moved to the transfer position, the measured positional deviation amount, and the measured moving position of the mask and the wafer. And moving the wafer based on the obtained moving position of each die of the wafer.

As set forth in claim 6, two or more of each of the first mark and the second mark are provided, and one of the second marks is used as a reference for the first mark. While measuring the amount of misalignment of each mark, the moving position of the mask at the time of measuring the amount of misalignment is measured, and the amount of rotation of the mask is calculated based on the amount of misalignment and the moving position of the mask. On the other hand, the positional deviation amount of each of the second marks is measured with reference to one of the first marks, and the movement position of the wafer at the time of measuring the positional deviation amount is measured. The step of measuring, calculating the amount of rotation of the wafer based on the positional shift amount and the moving position of the wafer, and obtaining the moving position of each die of the wafer is the mask moved to the transfer position. A moving position, the measured positional deviation amount, the measured moving position of the mask and wafer, and the wafer for positioning each die of the wafer at the time of transfer based on the calculated rotation amount of the mask and wafer. The feature is that the moving position and the rotation amount are obtained.

The above-mentioned claims 5 and 6 respectively include claim 3.
According to claims 3 and 4, the mask or the wafer is moved so that the positional deviation amount between the first mark and the second mark becomes zero, and the mask and the wafer at that time are moved. While I am trying to measure the moving position,
The fifth and sixth aspects are different in that the positional deviation amount between the first mark and the second mark is measured, and the moving positions of the mask and the wafer at the time of measuring the positional deviation amount are measured. It should be noted that the first mark and the second mark are determined based on the amount of positional deviation measured in this way and the moving positions of the mask and the wafer.
The moving position of the mask and the wafer when the amount of positional deviation from the mark becomes zero can be calculated.

According to a seventh aspect of the present invention, the mask is fixed at the transfer position, the microscope imaging device is retracted outside the exposure area of the exposure device at the time of transfer, and the mask of the mask is moved at the time of measuring the positional deviation amount. The feature is that the first mark is moved so as to be in the field of view.

According to claim 8 of the present application, the alignment step includes a step of moving the wafer so that the measured positional deviation amount becomes zero, and the wafer when the measured positional deviation amount is zero. The moving position of each die of the wafer based on the measured moving position of the wafer during transfer, the wafer based on the obtained moving position of each die of the wafer And a step of moving.

That is, the microscope image pickup device is moved to bring the first mark of the mask and the second mark of the wafer into the visual field, where the positional relationship between the mask and the wafer is measured in advance, and thereafter, At the time of transfer, the microscope image pickup device is retracted, and each die of the wafer is aligned based on the measured positional relationship between the mask and the wafer.

As described in claim 9 of the present application, two or more of each of the first mark and the second mark are provided, and one of the second marks is used as a reference for the first mark. The moving positions of the wafer are measured when the positional deviation amount of each mark is zero, and the rotation amount of the mask is calculated based on the moving positions of these wafers, while one of the first marks is calculated. The moving position of the wafer is measured when the positional deviation amount of each of the second marks is zero with reference to one mark, and the rotation amount of the wafer is calculated based on these moving positions of the wafer. The step of obtaining the movement position of each die of the wafer is performed by positioning each die of the wafer at the time of transfer based on the measured movement position of the wafer and the calculated rotation amount of the mask and the wafer. It is characterized by determining the moving position and the rotation amount of the wafer to determine.

That is, the positions of a plurality of marks of the first mark are measured with reference to one of the second marks, and the rotation amount of the mask is calculated based on these measured positions. Then, the positions of the plurality of marks of the second mark are measured with reference to one of the first marks, and the amount of rotation of the wafer is calculated based on these measured positions. In consideration of the amount of rotation of the mask and the amount of rotation of the wafer thus obtained, the moving position of each die and the amount of rotation of the wafer required when aligning each die of the wafer with the transfer position are obtained. There is.

According to a tenth aspect of the present invention, the alignment step includes a step of measuring a moving position of the wafer when the measured positional deviation amount is measured, a step of measuring the positional deviation amount and a wafer position during transfer. It is characterized by including a step of obtaining a moving position of each die of the wafer based on the moving position and a step of moving the wafer based on the obtained moving position of each die of the wafer.

As set forth in claim 11, two or more of each of the first mark and the second mark are provided, and one of the second marks is used as a reference for the first mark. The displacement amount of each mark is measured, the moving position of the wafer at the time of measuring the displacement amount is measured, and the rotation amount of the mask is calculated based on the displacement amount and the moving position of the wafer. On the other hand, the positional deviation amount of each of the second marks is measured with reference to one of the first marks, and the movement position of the wafer at the time of measuring the positional deviation amount is measured. The step of measuring, calculating the amount of rotation of the wafer based on the amount of positional deviation and the moving position of the wafer, and obtaining the moving position of each die of the wafer includes And moving the position of the boss was a wafer is characterized by determining the moving position and the rotation amount of the wafer for positioning each die of the wafer at the time of transfer on the basis of the rotation amount of the calculated mask and wafer.

Claims 10 and 11 correspond to claims 8 and 9, respectively, but in claims 8 and 9, the positional deviation amount between the first mark and the second mark is zero. The wafer is moved to the wafer, and the moving position of the wafer at that time is measured.
1 is different in that the position shift amount between the first mark and the second mark is measured, and the moving position of the wafer at the time of measuring the position shift amount is measured. It should be noted that the moving position of the wafer when the amount of positional deviation between the first mark and the second mark becomes zero can be calculated based on the amount of positional deviation and the moving position of the wafer thus measured. .

According to a twelfth aspect of the present invention, the first marks provided on the mask are the first mask mark for detecting the position of the mask in the X direction and the position of the mask in the Y direction. And a second mask mark for detecting wafers, and the first mask mark and the second mask mark are arranged at positions of two adjacent sides of a quadrangle, and a pallet on which the wafer is mounted or The second mark provided on the wafer is a first wafer mark for detecting the position of the pallet or the wafer in the X direction and a second wafer mark for detecting the position of the pallet or the wafer in the Y direction. A wafer mark, and the first wafer mark and the second wafer mark are arranged at the positions of two adjacent sides of a quadrangle, and are in the visual field of the microscope image pickup device. When serial first and second marks is on, and being disposed at a position opposed to the first mask mark and a second mask mark.

In the first mark and the second mark having the above-mentioned shapes, the change amount of the two-dimensional position indicated by each mark is extremely small even if the photographing magnification of the microscope image pickup device changes. Further, the first mark and the second mark do not overlap each other within the field of view of the microscope image pickup device, and image processing for separating the marks and measuring the mark position is possible.

According to a thirteenth aspect of the present invention, there is provided a mask-to-wafer alignment apparatus in an exposure apparatus in which a mask is arranged close to a wafer and a mask pattern formed on the mask is transferred to a resist layer on the wafer, A first mark for alignment provided on the mask and a second mark for alignment provided on the pallet on which the wafer is mounted or the second mark for alignment provided on the wafer are orthogonal to the surface on which each mark is provided. A microscope image pickup device for simultaneously picking up images from different directions, the microscope image pickup device having two sets of image forming optical systems capable of focusing on the first mark and the second mark, respectively; The relative positional deviation amount between the first mark and the second mark is measured based on the obtained image signals of the first mark and the second mark. A location shift amount measuring means, and characterized in that the positional deviation amount on the basis of the positional deviation amount obtained by the measurement is provided and means for aligning relative position between the mask and the wafer to be zero.

According to a fourteenth aspect of the present invention, the microscope image pickup device includes a first image pickup element, a second image pickup element, and a first image pickup element.
An objective lens, a second objective lens for forming an image of the first mark on the first image pickup device via the first objective lens, and a second mark via the first objective lens. A third objective lens for forming an image on the second image sensor, a focus adjusting means for independently moving at least two of the first objective lens, the second objective lens and the third objective lens; Illumination means for emitting illumination light via the first objective lens.

In the microscope image pickup apparatus, the focus adjusting means can focus on the first mark and the second mark, respectively, even if the distance between the mask and the wafer arranged in proximity is changed. The relative positional deviation amount between the first mark and the second mark can be accurately measured.

[0036]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a mask and wafer alignment method and apparatus according to the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a longitudinal sectional view of an essential part of an electron beam proximity exposure apparatus including an alignment mechanism system of a first embodiment of a mask / wafer alignment apparatus according to the present invention, and FIG. 2 is shown in FIG. It is a principal part top view of the electron beam proximity exposure apparatus shown. Since the main configuration of the electron beam proximity exposure apparatus is the same as that shown in FIGS. 16 to 18, detailed description thereof will be omitted.

As shown in FIGS. 1 and 2, in this electron beam proximity exposure apparatus, one alignment unit (microscope image pickup apparatus) 100 is fixed to a frame 52 in a vacuum chamber 50. This microscope imaging device 100
Are fixed outside the exposure area that does not interfere with the transfer by the electron beam proximity exposure apparatus. In addition, in FIG.
Is an electron optical lens barrel.

Further, the lamp house 110 which constitutes the illumination means of the microscope image pickup device 100 is arranged outside the vacuum chamber 50, and the illumination light emitted from the lamp house 110 is transmitted through the optical fiber 111 and the illumination optical system. System 112,
Further, it is guided into the microscope image pickup device 100 through a window 54 provided in the top plate of the vacuum chamber 50.

The mask stage 80, to which the mask 32 is attached, can move in the X and Y directions.

FIG. 3 is a plan view of the mask 32. The mask 32 is an 8-inch mask, and four types of mask patterns P1 to P4 are formed. In addition, alignment mask marks are formed at the left and right positions of each mask pattern, and each mask pattern and mask mark are formed in a fixed relationship. In addition, in FIG.
M1 and M2 indicate mask marks formed at the left and right positions of the mask pattern P1.

When observing the mask mark M1 with the microscope image pickup device 100, the mask stage 80 is moved so that the mask mark M1 is within the visual field V of the microscope image pickup device 100. The position (x, y) of the mask stage 80 is determined by laser interferometers L _XM, L _YM (see FIG. 7).
Can be measured by.

On the other hand, the wafer 40 is attracted and fixed on the wafer pallet 44 by an electromagnetic chuck (not shown) as shown in FIG. The wafer pallet 44 is mounted and fixed on the electromagnetic chuck 60 of the wafer stage 70 shown in FIG. Note that FIG. 18 shows a case where the wafer 40 is directly mounted on the electromagnetic chuck 60 without using the wafer pallet 44.

The wafer pallet 44 is provided with pallet marks WP1 and WP2 as shown in FIG. These pallet marks WP1 and WP2 are formed at positions flush with the upper surface of the wafer 40.

The wafer 40 has various mask patterns.
A plurality of dies D are formed by the transfer of the die, etc.
The die mark DM for aligning these dies D is a wafer
It is formed on 40. The pallet mark WP1,
The positional relationship between WP2 and each die mark DM is the wafer 4
0 is mounted on the wafer pallet 44 and then measured separately.
Stored as data. Therefore, the wafer stage 7
The positions of the pallet marks WP1 and WP2 on 0 can be detected.
If it is possible, the position of each die mark DM is the same as the pallet mark.
Based on the positional relationship between WP1 and WP2 and each die mark DM
It can be calculated. The position of the wafer stage 70
Position (X, Y) is laser interferometer L_XW,L _YW(See Figure 7)
Can be measured by.

The microscope image pickup device 10 shown in FIGS. 1 and 2.
0 is for observing the mask mark M1 or M2 of the mask 32 and the pallet mark WP1 or WP2 at the same time and measuring the amount of positional deviation between the marks, which is orthogonal to the mask surface and the wafer pallet surface (wafer surface). It has two sets of image forming optical systems capable of simultaneously capturing images from different directions and simultaneously focusing on marks having different heights (positions in the Z direction).

FIG. 5 is an optical component layout showing the details of the microscope image pickup apparatus 100.

As shown in the figure, the image forming optical system of the microscope image pickup device 100 is divided into three optical paths with the objective lens 120 in common. That is, the microscope image pickup apparatus 100 includes a mask mark image pickup optical system for forming an image of the mask mark on the solid-state image pickup device (CCD) 130, and a pallet mark for CC.
An optical system for imaging a pallet mark for forming an image on D131;
It has an optical system for autofocus for forming an image of the mask mark on the CCD 132.

The mask mark imaging optical system is composed of an objective lens 120, half mirrors 121 and 122, and a mask mark imaging objective lens 123. The pallet mark imaging optical system is the objective lens 120 and half mirror 121. , 122, 124 and a pallet mark image forming objective lens 125. The auto focus optical system includes an objective lens 120 and half mirrors 121, 12
2, 124 and a focusing lens 126.

Further, the microscope image pickup apparatus 100 includes an objective lens 120, a half mirror 121, a total reflection mirror 127,
It has an illuminating means including an illuminating optical system including a lens 128, an optical system 112, and an optical fiber 111, and a lamp house 110 that emits illuminating light through the illuminating optical system. The optical system 112 in the illumination optical system includes an NA variable diaphragm 112A, a lens 112B, and a field variable diaphragm 1.
It is composed of 12C.

Further, the objective lens 120 and the pallet mark imaging objective lens 125 are each designed to be able to be moved by a small amount in the optical axis direction, and by moving the objective lens 120 by, for example, a piezo element, the mask mark CCD 130. The focus adjustment is performed so that the pallet mark is formed on the CCD 131, and the pallet mark is formed on the CCD 131 by moving the objective lens 125 for forming the pallet mark.

That is, the objective lens 120 is the CCD 1 for picking up an image of the mask mark via the autofocus optical system.
The lens position is automatically controlled so that the contrast of the output signal of 32 is maximized. Here, the autofocus optical system and the mask mark imaging optical system are adjusted in advance so that when the mask mark is imaged on the CCD 132, it is also imaged on the CCD 130. Therefore, CC
Objective lens 1 so that the mask mark is imaged on D132
By moving 20 the mask mark can be imaged on the CCD 130. The autofocus optical system has a lower photographing magnification than the mask mark imaging optical system so that focus adjustment can be easily performed.

Further, in the CCD 131, the position of the pallet mark imaging objective lens 125 is adjusted so that the wafer (pallet mark) arranged 50 μm below the mask 40 is imaged. The pallet mark imaging objective lens 125 can be moved by a small amount in the optical axis direction by, for example, an ultrasonic motor so that the pallet mark can be imaged even when the gap between the and pallets is changed.

In this embodiment, the objective lens 12
0 and the pallet mark image forming objective lens 125 are each movable in the optical axis direction for focus adjustment, but the present invention is not limited to this, and the objective lens 120, the mask mark image forming objective lens 123, and the pallet mark are not limited thereto. If at least two of the imaging objective lenses 125 are configured to be movable in the optical axis direction, it is possible to focus on the mask mark and the pallet mark, respectively. Also,
The microscope image pickup apparatus 100 has a phase difference plate (not shown) that can be attached to and detached from the pupil position, and has a function as a phase difference microscope. Furthermore, this microscope imaging device 10
The illumination means applied to 0 is arranged to be manually switched to epi-illumination or critical illumination.

Further, in this embodiment, two CCDs on which a mask mark and a pallet mark are imaged, respectively.
(CCD130, 131) is provided,
The optical paths of the two sets of imaging optical systems may be merged via a mirror or a half mirror, and the mask mark and the pallet mark may be imaged on one CCD.

FIG. 6 is a layout diagram of optical components of a microscope image pickup device 100 'for forming an image of a mask mark and a pallet mark on one CCD. The same parts as those in FIG. 5 are designated by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIG. 6, this microscope image pickup apparatus 1
The mask mark imaging optical system of 00 'includes the objective lens 12
0, half mirrors 140, 141, reflection mirror 143,
The mask mark imaging objective lens 123 and the half mirror 144 are included, and the pallet mark imaging optical system includes an objective lens 120, half mirrors 140, 141, and
The pallet mark imaging objective lens 125, half mirrors 142, and 144 are included. In addition, the optical system for autofocus includes an objective lens 120, half mirrors 140 and 141, and a pallet mark imaging objective lens 1.
25, half mirror 142, and focusing lens 1
It is composed of 26.

The mask mark image pickup optical system and the pallet mark image pickup optical system configured as described above can simultaneously form an image of the mask mark and the pallet mark on the same alignment CCD 145.

Next, a method of detecting the positional deviation amount between the mask mark and the pallet mark will be described.

FIG. 7 shows a case where the mask mark M and the pallet mark WP are placed in the visual field V of the microscope image pickup device 100. The mask mark M includes a mask mark M _X having 5 × 2 openings for detecting the position of the mask in the X direction, and a mask having 5 × 2 openings for detecting the position of the mask in the Y direction. The pallet mark WP is composed of the marks M _Y , and the pallet marks WP are five protrusions (or recesses) for detecting the position of the wafer pallet in the X direction.
Pallet mark WP _X and Y of wafer pallet
The pallet mark WP _Y is composed of five convex portions (or concave portions) for detecting the position in the direction.

Further, the mask 32 is formed with an L-shaped opening 33 for observing the pallet mark WP located below the mask 32. An image of scattered light at the pallet mark WP is captured by the opening 33 without being attenuated by the mask 32, so that the contrast between the image of the pallet mark WP and the background is not lowered.

In order to obtain the positional deviation amount between the mask mark M and the pallet mark WP, the image signal obtained from the CCD 130 on which the mask mark M is imaged is subjected to signal processing,
The center position of the mask mark M _{X and} the center position of the mask mark M _Y are obtained. Similarly, pallet mark WP
The image signal obtained from the CCD 131 on which is imaged is subjected to signal processing to obtain the center position of the pallet mark WP _{X and} the center position of the pallet mark WP _Y , respectively.

The mask mark M is calculated based on the difference between the pixel position on the CCD 130 indicating the center position of the mask mark M and the pixel position on the CCD 131 indicating the center position of the pallet mark WP. And the amount of positional deviation between the pallet mark WP and the pallet mark WP is measured. Then, the wafer stage 7 is adjusted so that the measured positional deviation amount becomes zero.
0 or the mask stage 80 is moved to move the mask mark M
And the position indicated by the pallet mark WP are matched. Note that FIG. 7 shows a case where the position indicated by the mask mark M and the position indicated by the pallet mark WP match. Further, when the objective lens 120 of the microscope image pickup device 100 moves by a small amount, the image pickup magnification changes, but the position indicated by the mask mark M and the position indicated by the pallet mark WP shown in FIG. Even if the magnification changes, the amount of change is extremely small.

FIG. 8 is a block diagram showing an embodiment of a control unit of the electron beam proximity exposure apparatus.

In the figure, a central processing unit (CPU) 2
Reference numeral 00 generally controls the entire apparatus, and performs processing such as alignment of the mask and the wafer and deflection control of the electron beam during exposure. Each image signal indicating the mask mark M and the pallet mark WP obtained by the image pickup by the microscope image pickup apparatus 100 is added to the signal processing circuit 202. The signal processing circuit 202 calculates the amount of positional deviation between the mask mark M and the pallet mark WP based on each input image signal.

The CPU 200 moves the wafer stage 70 via the stage drive circuit 204 or moves the mask stage 80 via the stage drive circuit 206 so that the amount of positional deviation input from the signal processing circuit 202 becomes zero. .

Further, the CPU 200 sets the mask mark M and
Wafer stage when pallet mark WP matches
Laser interference at position (X, Y) of 70 in X and Y directions
Total L _XW, L_YWFrom the mask stage 80
Position (x, y) in the X and Y directions of the laser interferometer L
_XM, L_YMIt is taken in from and stored in the memory 203. Well
In addition, the pallet is stored in the memory 203 as described in FIG.
Positional relationship between the marks WP1 and WP2 and each die mark DM
Data indicating the relation is stored. In the memory 203
The position of the remembered wafer stage 70 or mask stage 80
Details of mask and wafer alignment control based on placement
Will be described later.

Further, the CPU 200 supplies the deflection amount data for scanning the mask and the correction data corresponding to the distortion of the mask to the digital arithmetic circuit 205, and the digital arithmetic circuit 205 scans the mask based on the deflection amount data. To the main DAC / AMP 208, and a digital signal for correcting the mask distortion based on the correction data to the sub DAC / AMP 210.

The main DAC / AMP 208 converts the input digital signal into an analog signal, amplifies it, and outputs it to the main deflectors 22 and 24 shown in FIG. As a result, the electron beam 15 is deflected so as to scan the entire surface of the mask as shown in FIG. 17 while maintaining the state of being parallel to the optical axis. The sub DAC / AMP 210 converts the input digital signal into an analog signal and then amplifies it.
This is output to the sub deflectors 26 and 28 shown in FIG. As a result, the incident angle of the electron beam 15 on the mask is controlled so that the mask pattern can be transferred to the regular position even if the mask is distorted.

FIG. 9 is a flow chart showing the operation procedure of the electron beam proximity exposure method including the mask and wafer alignment method according to the present invention.

First, the mask 32 is loaded on the mask stage 80, and the mask stage 80 is moved so that the mask mark M1 enters the visual field of the microscope image pickup device 100 (step S10). Similarly, the wafer pallet 44 is loaded on the wafer stage 70, and the wafer stage 70 is moved so that the pallet mark WP1 falls within the field of view of the microscope imaging apparatus 100 (step S12).

The microscope image pickup device 100 moves the objective lens 120 and the pallet mark imaging objective lens 125 as described with reference to FIG. 5 so that the mask mark M1 and the pallet mark WP1 in the field of view are in focus (step). S14).

Subsequently, the mask marks M1 and M2 are measured with the pallet mark WP1 as a reference, and the rotation amount θ _M of the mask 32 is calculated based on the measurement result (step S).
16).

FIG. 10 is a flow chart showing the details of step S16.

As shown in the figure, the amount of positional deviation between the pallet mark WP1 and the mask mark M1 within the field of view of the microscope image pickup device 100 is measured by processing the image signal obtained from the microscope image pickup device 100 (step S16).
A). It is determined whether or not the measured positional deviation amount is zero (step S16B). If the positional deviation amount ≠ 0, the mask stage 80 is moved in the direction in which the positional deviation amount approaches zero (step S16C), and the step In S16A, the amount of positional deviation between the pallet mark WP1 and the mask mark M1 is measured again. Then, the processes of steps S16A, S16B, and S16C are repeated until the positional deviation amount becomes zero.

When it is determined in step S16C that the positional deviation amount is 0, the moving position (x _1, y ₁ ) of the mask stage 80 at that time is read from the laser interferometers L _XM and L _YM and stored in the memory 203. Along with the wafer stage 7
The moving position (X _1, Y ₁ ) of 0 is read from the laser interferometers L _XW and L _YW and stored in the memory 203 (step S1).
6D).

Next, the mask stage 80 is moved so that the mask mark M2 of the mask 32 is within the field of view of the microscope image pickup device 100, and the pallet mark WP is processed in the same manner as above.
The mask stage 80 is moved so that the positional deviation amount between 1 and the mask mark M2 becomes zero (step S16).
E, S16F, S16G). And step S16F
The mask stage 8 when it is determined that the positional deviation amount = 0 in
The moving position (x _2, y ₂ ) of 0 is read from the laser interferometers L _XM and L _YM and stored in the memory 203 (step S1).
6H).

The positions (x _1, y ₁ ) and (x _2, of the mask stage 80 when the mask marks M1 and M2 measured as described above match the pallet mark WP1, respectively _.
The rotation amount θ _M of the mask 32 is calculated from y ₂ ) (step S16I).

Returning to FIG. 9, in step S18, the pallet marks WP1 and WP are set with reference to the mask mark M2.
2 is measured, and the wafer pallet 4 is measured based on the measurement result.
The rotation amount θ _{P of} 4 is calculated.

FIG. 11 is a flowchart showing details of step S18.

At the time when the process of step S16 is completed, the pallet mark WP1 and the mask mark M2 are in alignment with each other, and the position (X _1, Y ₁ ) of the wafer stage 70 at this time and the mask The position (x _2, y ₂ ) of the stage 80 has been measured.

In step S18A of FIG. 11, the pallet mark WP2 of the wafer pallet 44 is set to the microscope image pickup device 1.
The wafer stage 70 is moved so as to enter the visual field of 00, and the mask mark M2 in the visual field of the microscope image pickup apparatus 100 is moved.
The amount of positional deviation between the pallet mark WP2 and the pallet mark WP2 is measured by processing an image signal obtained from the microscope image pickup apparatus 100. It is determined whether or not the measured positional deviation amount is zero (step S18B), and when the positional deviation amount ≠ 0,
The wafer stage 70 is moved in the direction in which the amount of positional deviation approaches zero (step S18C), and the amount of positional deviation between the mask mark M2 and the pallet mark WP2 is measured again in step S18A. Then, the processes of steps S18A, S18B, and S18C are repeated until the positional deviation amount becomes zero.

When it is determined in step S18B that the positional deviation amount is 0, the moving position (X _2, X ₂ ) of the wafer stage 70 at that time is read from the laser interferometers L _XM and L _YM and stored in the memory 203. (Step S18D).

Palletmers measured as described above
WP1 and WP2 match the mask mark M2
Position of wafer stage 70 (X_1,Y₁), (X
_2,Y ₂) To the rotation amount θ of the wafer pallet 44_PCalculate
(Step S18E). The position of the wafer stage 70
Set (X_1,Y₁) Has already been measured in step S16D of FIG.
It is fixed.

Returning to FIG. 9, in step S20, the mask stage 80 is driven to move the mask 32 to the transfer position, and the position of the mask stage 80 at that time (x
_0, y ₀ ) is read from the laser interferometers L _XM and L _YM (step S20).

Next, the position of each die D for aligning each die D of the wafer 40 with respect to the mask 32 moved to the transfer position (the position (X, Y) of the wafer stage 70 and the rotation of the wafer stage 70). Calculate the amount θ) (step S
22).

For example, the moving position (X, Y) of the wafer stage 70 for aligning the pallet mark WP1 with the mask mark M1 of the mask 32 at the transfer position is given by the following equation:

[0088]

## EQU1 ## X = X ₁ + (x ₀ −x ₁ ) Y = Y ₁ + (y ₀ −y ₁ ) ... (1)

However, since it is necessary to align each die D of the wafer 40 with the mask 32 at the transfer position, the positions of the pallet mark WP1 and each die mark DM which are measured in advance as described with reference to FIG. The position (X, Y) of the wafer stage 70 for aligning each die D of the wafer 40 with respect to the mask 32 at the transfer position based on the data indicating the relationship and the position data obtained by the equation (1).
Ask for.

When the rotation amount θ _M of the mask 32 and the rotation amount θ _P of the wafer pallet 44 are both zero, the position of the wafer stage 70 (X,
Y) can be used to align the dies D of the wafer 40. However, when the mask 32 or the wafer pallet 44 is rotated and attached to each stage, the mask 32 obtained in step S16 is used. Rotation amount θ _{M of} the wafer pallet 44 and the rotation amount θ _P of the wafer pallet 44 obtained in step S18.
The wafer stage 70 is rotated based on the above.

When the rotation amount of the wafer stage 70 at this time is θ, the rotation amount θ is

[0092]

[Equation 2] θ = θ _M −θ _P (2)

Further, the rotation amount of the wafer pallet 44 on the XY plane can be obtained from the rotation amount θ _P of the wafer pallet 44 and the rotation amount θ of the wafer stage 70. The rotation amount of the wafer pallet 44 on the XY plane,
Based on the rotation center of the wafer stage 70, the wafer 32
In order to obtain the displacement amount of the die mark DM of each die D (the displacement amount based on the case where the wafer pallet 44 is not rotating on the XY plane), and to align each die D of the wafer 40 with this displacement amount. The position (X, Y) of the wafer stage 70 is corrected.

The position of each die D for aligning each die D of the wafer 40 with respect to the mask 32 moved to the transfer position calculated as described above (the position (X, Y) of the wafer stage 70 and the wafer). Based on the rotation amount θ of the stage 70, the wafer stage 70 is moved and the wafer stage 70 is rotated (step S24).

Next, the mask pattern formed on the mask 32 is transferred onto the wafer by the electron beam (step S26). Then, it is determined whether or not the transfer of all the dies has been completed (step S28), and if not completed, the process returns to step S24 to align the other dies,
The mask pattern is transferred again. When the transfer of all the dies is completed in this way, the wafer is unloaded and the process is completed.

FIG. 12 is a longitudinal sectional view of an essential part of an electron beam proximity exposure apparatus including the alignment mechanism system of the second embodiment of the mask and wafer alignment apparatus according to the present invention.
FIG. 13 is a top view of essential parts of the electron beam proximity exposure apparatus shown in FIG. The same parts as those of the first embodiment shown in FIGS. 1 and 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

In the first embodiment, the mask 32 can be moved so that the mask mark M enters the field of view of the microscope image pickup device 100 fixed outside the exposure area, whereas in the second embodiment. In the embodiment, the mask stage 8
The mask 32 attached to No. 2 does not move, and the microscope imaging device 150 is moved by the microscope stage 84 in the X direction and the Y direction.
You can move in any direction.

Illumination light is guided from the lamp house 110 to the microscope image pickup device 150 through the optical fiber 111, the optical system 112, the window 54 provided on the top plate of the vacuum chamber 50, and the optical fiber 113. It is like this. Further, the microscope image pickup device 150 is configured such that an objective lens or the like at the tip of the microscope can be inserted between the electron optical lens barrel 102 and the mask 32, but the other internal configuration is the microscope shown in FIG. Since it is similar to the imaging device 100,
Detailed description thereof will be omitted.

FIG. 14 is a flow chart showing the operation procedure of the electron beam proximity exposure method including the mask and wafer alignment method using the alignment mechanism system of the second embodiment.

First, the mask 32 is loaded on the mask stage 82 (step S100), and then the microscope stage 84 is moved so that the mask mark M1 is in the visual field of the microscope image pickup device 150 (step S102). Further, the wafer pallet 44 is loaded on the wafer stage 70, and the wafer stage 70 is moved so that the pallet mark WP1 is within the visual field of the microscope image pickup device 150 (step S104).

The microscope image pickup device 150 moves the objective lens 120 and the pallet mark imaging objective lens 125 so that the mask mark M1 and the pallet mark WP1 in the field of view are in focus (step S106).

Next, the mask marks M1 and M2 are measured with the pallet mark WP1 as a reference, and the rotation amount θ _M of the mask 32 is calculated based on the measurement result (step S1).
08).

FIG. 15 is a flowchart showing details of step S108.

As shown in the figure, the positional deviation amount between the mask mark M1 and the pallet mark WP1 in the field of view of the microscope image pickup device 150 is measured by processing the image signal obtained from the microscope image pickup device 150 (step S108).
A). It is determined whether or not the measured positional deviation amount is zero (step S108B). If the positional deviation amount ≠ 0,
The wafer stage 70 is moved in the direction in which the amount of positional deviation approaches zero (step S108C), and step S108A
Then, the amount of positional deviation between the mask mark M1 and the pallet mark WP1 is measured again. Then, the processes of steps S108A, S108B, and S108C are repeated until the positional displacement amount becomes zero.

When it is determined in step S108C that the positional deviation amount is 0, the moving position (X _1, Y ₁ ) of the wafer stage 70 at that time is read from the laser interferometers L _XW, L _YW and stored in the memory 203. (Step S108D).

Next, the microscope stage 84 is moved so that the mask mark M2 of the mask 32 enters the field of view of the microscope image pickup device 150 (step S108E). Since the gap between the electron optical lens barrel 102 and the mask 32 is narrow, the microscope image pickup device 150 is placed so that the mask mark M2 is included in the visual field.
In some cases, it is not possible to move the lens, but in this case, it is necessary to provide another microscope image pickup device for observing the mask mark M2.

Thereafter, in the same manner as described above, the mask mark M
2 and the pallet mark WP1 position shift amount becomes zero
To move the wafer stage 70 (step S1
08F, S108G, S108H). And step
Wafer scan when it is determined in S10G that the positional deviation amount is 0
The moving position of the tage 70 (X_2,Y₂) Laser interferometer L
_XW,L_YWAnd read it from the memory 203 and store it in the memory 203.
Step S108I).

Positions (X _1, Y ₁ ) and (X _2, of the wafer stage 70 when the mask marks M1 and M2 measured as described above match the pallet mark WP1, respectively _.
The rotation amount θ _M of the mask 32 is calculated from Y ₂ ) (step S108J).

Returning to FIG. 14, in step S110,
Pallet mark WP1, based on the mask mark M2,
WP2 is measured, and the rotation amount θ _P of the wafer pallet 44 is calculated based on the measurement result (see the flowchart of FIG. 11).

Next, the microscope stage 84 is driven to retract the microscope image pickup device 150 from the transfer area (step S112).

Subsequently, the position of each die D for aligning each die D of the wafer 40 with respect to the mask 32 (the position (X, Y) of the wafer stage 70 and the wafer stage 70).
The rotation amount θ of is calculated (step S114). Note that the calculation can be performed in the same manner as in step S22 of FIG.
In the alignment mechanism system of the second embodiment, the mask 3
Since 2 is not moved, the calculation shown in equation (1) is unnecessary.

The wafer stage 70 is moved based on the position of each die D calculated as described above (the position (X, Y) of the wafer stage 70 and the rotation amount θ of the wafer stage 70), and the wafer stage 70 is moved. Rotate (step S116).

Next, the mask pattern formed on the mask 32 is transferred onto the wafer by the electron beam (step S118). Subsequently, it is determined whether or not the transfer of all the dies has been completed (step S120), and if not completed, the process returns to step S116, the other dies are aligned, and the transfer of the mask pattern is performed again. . When the transfer of all the dies is completed in this way, the wafer is unloaded and the process is completed.

In this embodiment, the mask stage or the wafer stage is moved so that the positional deviation amount between the mask mark and the pallet mark becomes zero, and the moving positions of the max stage and the wafer stage at that time are measured. However, the position shift amount between the mask mark and the pallet mark is not limited to this, and is measured from the position shift amount on the screen of the microscope image pickup device, and the moving positions of the max stage and wafer stage at the time of this measurement are also measured. Then
The moving positions of the mask stage and the wafer stage when the positional deviation amount between the mask mark and the pallet mark becomes zero may be calculated based on these measurement results.

Further, in this embodiment, the wafer 32 is mounted on the wafer pallet 44, and the wafer pallet 4 is further mounted.
Although the example in which 4 is mounted on the wafer stage 70 (the electromagnetic chuck 60 of the wafer stage 70) has been described, the present invention is not limited to this, and the present invention directly mounts the wafer 32 on the wafer stage 7.
It can also be applied to the case where it is attracted to the electromagnetic chuck 60 above zero. In this case, instead of measuring the positions of the pallet marks WP1 and WP2 of the wafer pallet 44, the wafer 3
Measure the position of at least two die marks DM on 2.

[0116]

As described above, according to the present invention, the mask mark (first mark) formed on the mask, the pallet mark on the wafer pallet on which the wafer is mounted or the die mark (second mark) on the wafer. The amount of misalignment with the mark) can be accurately measured, and highly accurate alignment between the mask and the wafer can be realized. In particular, since the first mark and the second mark are imaged from the direction orthogonal to the surface on which each mark is provided in the state where the mask is arranged in the vicinity of the wafer, the first image is picked up by one microscope image pickup device. It is possible to measure a two-dimensional amount of positional deviation between the mark and the second mark. Further, this microscope image pickup device has two sets of imaging optical systems capable of focusing on the first mark and the second mark, respectively, and the first mark obtained simultaneously from the microscope image pickup device. Since the relative positional deviation amount between each mark is measured based on the image signal of the second mark and the first mark,
It is possible to accurately measure the amount of positional deviation between the mark and the second mark.

[Brief description of drawings]

FIG. 1 is a longitudinal sectional view of an essential part of an electron beam proximity exposure apparatus including an alignment mechanism system according to a first embodiment of a mask and wafer alignment apparatus according to the present invention.

FIG. 2 is a top view of a main part of the electron beam proximity exposure apparatus shown in FIG.

FIG. 3 is a plan view of a mask used in the electron beam proximity exposure apparatus shown in FIG.

FIG. 4 is a plan view of a wafer pallet loaded with wafers.

FIG. 5 is a layout view of optical components showing details of a microscope image pickup apparatus applied to the present invention.

FIG. 6 is an optical component layout diagram showing another embodiment of the microscope image pickup apparatus applied to the present invention.

FIG. 7 is a diagram used for explaining a method of detecting a positional deviation amount between a mask mark and a pallet mark by a microscope imaging device.

FIG. 8 is a block diagram showing an embodiment of a control unit of the electron beam proximity exposure apparatus.

FIG. 9 is a flowchart showing an operation procedure of an electron beam proximity exposure method including a mask and wafer alignment method according to the present invention.

10 is a flowchart showing a detailed processing procedure of a part of the flowchart shown in FIG.

11 is a flowchart showing a detailed processing procedure of another part of the flowchart shown in FIG.

FIG. 12 is a longitudinal sectional view of an essential part of an electron beam proximity exposure apparatus including an alignment mechanism system of a second embodiment of a mask / wafer alignment apparatus according to the present invention.

13 is a top view of a main part of the electron beam proximity exposure apparatus shown in FIG.

FIG. 14 is a flowchart showing an operation procedure of another embodiment of an electron beam proximity exposure method including a mask and wafer alignment method according to the present invention.

15 is a flowchart showing a detailed processing procedure of a part of the flowchart shown in FIG.

FIG. 16 is a diagram showing a basic configuration of an electron beam proximity exposure apparatus.

FIG. 17 is a diagram used for explaining scanning of a mask by an electron beam.

FIG. 18 is an overall configuration diagram of an electron beam proximity exposure apparatus.

[Explanation of symbols]

15 ... Electron beam, 22, 24 ... Main deflector, 26, 28
... sub-deflector, 32 ... mask, 40 ... wafer, 44 ... wafer pallet, 70 ... wafer stage, 80 ... mask stage, 84 ... microscope stage, 100, 100 ', 15
0 ... Microscope image pickup device, 110 ... Lamp house, 120 ...
Objective lens, 123 ... Objective lens for mask mark imaging,
125 ... Pallet mark imaging objective lens, 130, 1
31, 145 ... CCD, 200 ... CPU, 203 ... Memory, 204, 206 ... Stage drive circuit, L _XM , L _YM
L _XW , L _YW ... Laser interferometer, M, M1, M2 ... Mask mark, WP, WP1, WP2 ... Pallet mark, D ... Die, DM ... Die mark

─────────────────────────────────────────────────── ─── Continued Front Page (51) Int.Cl. ⁷ Identification Code FI Theme Coat (Reference) H01L 21/30 525W

Claims (14)

[Claims] 1. A method for aligning a mask and a wafer in an exposure apparatus, wherein a mask is arranged in proximity to a wafer, and a mask pattern formed on the mask is transferred to a resist layer on the wafer. A step of simultaneously imaging a first mark for alignment and a pallet on which the wafer is mounted or a second mark for alignment provided on the wafer from a direction orthogonal to a surface on which each mark is provided. And a step of simultaneously capturing images with a microscope image pickup device having two sets of image forming optical systems capable of focusing on the first mark and the second mark, respectively. A step of measuring the relative positional deviation amount between the first mark and the second mark based on the image signals of the first mark and the second mark. -Up and, mask and method of aligning a wafer, which comprises the steps of: registering relative position between the mask and the wafer on the basis of the positional deviation amount obtained by the measurement. 2. The microscope image pickup device is fixed to an outside of an exposure area in the exposure device, and the first mark and the second mark are placed in a field of view of the microscope image pickup device at the step of performing the image pickup. The mask and wafer alignment method according to claim 1, wherein the mask and the wafer are moved. 3. The step of aligning comprises moving one of the mask and the wafer so that the measured displacement amount becomes zero, and the mask when the measured displacement amount is zero. And a moving position of the wafer, a step of moving the mask to a transfer position, a moving position of the mask moved to the transfer position, and a transfer based on the measured moving position of the mask and the wafer. 3. The mask according to claim 2, further comprising: a step of obtaining a moving position of each die of the wafer at a time, and a step of moving the wafer based on the obtained moving position of each die of the wafer. Wafer alignment method. 4. The first mark and the second mark are each provided in two or more, and the positional deviation amount of each of the first marks is based on one of the second marks. Each measuring the moving position of the mask at zero, calculating the amount of rotation of the mask based on the moving position of these masks,
On the other hand, the moving position of the wafer is measured when the positional deviation amount of each of the second marks is zero with reference to one of the first marks, and the moving position of these wafers is measured. The step of calculating the rotation amount of the wafer based on the step of obtaining the moving position of each die of the wafer, the moving position of the mask moved to the transfer position, the measured moving position of the mask and the wafer, 4. The method for aligning a mask and a wafer according to claim 3, wherein a moving position and a rotation amount of the wafer for positioning each die of the wafer at the time of transfer are obtained based on the calculated rotation amount of the mask and the wafer. . 5. The positioning step comprises: measuring the moving positions of the mask and the wafer when measuring the positional deviation amount; moving the mask to a transfer position; and moving the mask to the transfer position. Determining the moving position of each die of the wafer at the time of transfer based on the moved position of the mask, the measured position shift amount, and the measured moving position of the mask and the wafer; 3. The method for aligning a mask and a wafer according to claim 2, further comprising: moving the wafer based on a moving position of each die. 6. The first mark and the second mark are each provided in two or more, and the positional deviation amount of each mark of the first mark is set with reference to one of the second marks. Along with the measurement, the moving position of the mask at the time of measuring the positional deviation amount is measured, and the rotation amount of the mask is calculated based on the positional deviation amount and the moving position of the mask. The positional deviation amount of each of the second marks is measured with reference to one of the marks, and the moving position of the wafer at the time of measuring the positional deviation amount is measured, and these positional deviations are measured. The step of calculating the rotation amount of the wafer based on the amount and the moving position of the wafer, and obtaining the moving position of each die of the wafer includes the moving position of the mask moved to the transfer position and the measurement. Based on the amount of positional deviation, the measured movement positions of the mask and wafer, and the calculated rotation amounts of the mask and wafer, the movement position and rotation amount of the wafer for positioning each die of the wafer during transfer are obtained. The method for aligning a mask and a wafer according to claim 5, wherein. 7. The mask is fixed at a transfer position, the microscope imaging device retracts outside an exposure region in the exposure device at the time of transfer, and views the first mark of the mask at the time of measuring the positional deviation amount. The method for aligning a mask and a wafer according to claim 1, wherein the mask and the wafer are moved so as to be placed inside. 8. The position adjusting step includes a step of moving the wafer so that the measured positional deviation amount becomes zero, and a moving position of the wafer when the measured positional deviation amount is zero. A step of obtaining a moving position of each die of the wafer based on the measured moving position of the wafer during transfer, a step of moving the wafer based on the obtained moving position of each die of the wafer, The method for aligning a mask and a wafer according to claim 7, further comprising: 9. The first mark and the second mark are each provided in two or more, and the positional deviation amount of each of the first marks is based on one of the second marks. Each measuring the moving position of the wafer when it is zero, calculating the amount of rotation of the mask based on the moving position of these wafers,
On the other hand, the moving position of the wafer is measured when the positional deviation amount of each of the second marks is zero with reference to one of the first marks, and the moving position of these wafers is measured. The step of calculating the rotation amount of the wafer based on the above, and the step of obtaining the moving position of each die of the wafer is performed at the time of transfer based on the measured moving position of the wafer and the calculated rotation amount of the mask and the wafer. 9. The mask / wafer alignment method according to claim 8, wherein a movement position and a rotation amount of the wafer for positioning each die of the wafer are obtained. 10. The alignment step is based on a step of measuring a moving position of the wafer when the measured positional deviation amount is measured, and based on the measured positional deviation amount and the wafer moving position at the time of transfer. 8. The mask and wafer according to claim 7, further comprising: a step of obtaining a moving position of each die of the wafer; and a step of moving the wafer based on the obtained moving position of each die of the wafer. Alignment method. 11. The first mark and the second mark are each provided in two or more, and a positional deviation amount of each of the first marks is set with reference to one of the second marks. Along with the measurement, the moving position of the wafer at the time of measuring the positional shift amount is measured, and the rotation amount of the mask is calculated based on the positional shift amount and the moving position of the wafer. The positional deviation amount of each of the second marks is measured with reference to one of the marks, and the moving position of the wafer at the time of measuring the positional deviation amount is measured, and these positional deviations are measured. The step of calculating the rotation amount of the wafer based on the amount and the moving position of the wafer and obtaining the moving position of each die of the wafer is performed by the measured positional deviation amount and the measured moving position of the wafer. 11. The mask and wafer position according to claim 10, wherein a moving position and a rotation amount of the wafer for positioning each die of the wafer during transfer are obtained based on the calculated rotation amount of the mask and the wafer. How to match. 12. The first mark provided on the mask includes a first mask mark for detecting a position of the mask in the X direction and a second mask mark for detecting a position of the mask in the Y direction. The first mask mark and the second mask mark are arranged at positions of two adjacent sides of a quadrangle, and the pallet on which the wafer is mounted or the first mask mark provided on the wafer. The second mark comprises a first wafer mark for detecting the position of the pallet or wafer in the X direction and a second wafer mark for detecting the position of the pallet or wafer in the Y direction. The first wafer mark and the second wafer mark are arranged at the positions of two adjacent sides of a quadrangle, and the first mark and the second wafer mark are in the visual field of the microscope image pickup device. 12. The mask and wafer alignment according to claim 1, wherein when the mark is present, the mask and the wafer are arranged at positions facing the first mask mark and the second mask mark. Method. 13. A mask-to-wafer aligning device in an exposure device, wherein a mask is arranged in proximity to a wafer, and a mask pattern formed on the mask is transferred to a resist layer on the wafer, a position provided on the mask. Microscope imaging for simultaneously capturing the first mark for alignment and the second mark for alignment provided on the pallet or the wafer on which the wafer is mounted from a direction orthogonal to the surface on which each mark is provided. A microscope image pickup apparatus having two sets of image forming optical systems capable of focusing on the first mark and the second mark, respectively, and the first mark obtained from the microscope image pickup apparatus. And a positional deviation amount measuring means for measuring a relative positional deviation amount between the first mark and the second mark based on the image signal of the second mark, An apparatus for aligning a mask and a wafer, comprising: a unit that relatively aligns the mask and the wafer so that the amount of displacement is zero based on the measured amount of displacement. 14. The microscope image pickup device includes a first image pickup device, a second image pickup device, a first objective lens, and the first image pickup device.
A second objective lens for forming an image of the mark (1) on the first image pickup device via the first objective lens, and the second mark on the second image pickup device via the first objective lens. Via a third objective lens for forming an image, a focus adjusting means for independently moving at least two of the first objective lens, the second objective lens and the third objective lens, and the first objective lens. 14. The mask and wafer alignment apparatus according to claim 13, further comprising an illumination unit that emits illumination light.