JP2003037047A - Charged particle beam exposure apparatus, semiconductor device manufacturing method, semiconductor manufacturing factory, charged particle beam exposure apparatus maintenance method - Google Patents

Abstract

(57) [Summary] (with correction) [PROBLEMS] To dispose a linear motor in a vacuum chamber and drive an XY stage as a drive source with high accuracy. A charged particle beam exposure apparatus includes a vacuum chamber.
A platen 21 made of a magnetic material and a substrate W are held in the substrate 100, and the substrate is moved to an exposure position on the platen by a linear motor.
Stages 22 and 23, which are positioned by 25, and a fluid bearing 27 which causes the stage to float from the surface plate by supplying pressurized fluid
a, b, c, and a magnet unit that is provided on the opposing surface of the surface plate and the stage and generates a magnetic attraction force to apply a pressure to the floating of the stage due to the supply of the pressurized fluid. In order to remove the magnetic field leaking from the opening of the magnetic shield material that suppresses the magnetic field generated from the linear motor when moving, in the opening, a plurality of electromagnetic coils for generating a correction magnetic field that cancels out the leakage magnetic field, An exciting current control means for controlling the leakage magnetic field.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam exposure apparatus such as an electron beam exposure apparatus and an ion beam exposure apparatus which are mainly used for exposure of semiconductor integrated circuits and the like, and particularly, an electromagnetic force is used. A charged particle beam exposure apparatus improved to solve the problem of exposure accuracy deterioration due to the position variation of the charged particle beam accompanying the driving of a stage drive device (linear motor), and a semiconductor using this charged particle beam exposure apparatus The present invention relates to a device manufacturing method, a semiconductor manufacturing factory in which this apparatus is installed, and a charged particle beam exposure apparatus maintenance method.

[0002]

2. Description of the Related Art In recent years, there have been remarkable progresses in high-density and finer semiconductor integrated technologies, and DR with a minimum line width of 0.1 μm level.
AM is expected to be developed in the near future. As a powerful exposure method for forming such a fine pattern, a method using a charged particle beam is considered promising.

In order to draw and form a very fine pattern by a charged particle beam exposure apparatus, positional stability is required to accurately irradiate the position where the charged particle beam should be drawn, but as another condition, the charged particle beam is used. In the case of, compared to the light exposure method, the exposure area is narrower, so the connection points between the patterns become denser
It is necessary to improve the connection accuracy. For that purpose, a more accurate XY stage is required.

Conventionally, the stage driving device of this type of exposure apparatus is arranged outside the vacuum environment, and the driving force is transmitted through the connecting rod to move the XY stage moving part (hereinafter,
Simply called the "XY stage". ) Was driving. Further, the XY stage is supported by a pair of cross roller guides for the X axis and a pair of cross roller guides for the Y axis, and is guided to move on the surface plate in the X and Y directions.

[0005]

In recent years, the movement stroke of the XY stage tends to be long due to the increase in the size of the wafer. In that case, the conventional method of transmitting power through the connecting rod has a low rigidity of the arm of the connecting rod,
Mechanical error is likely to occur under the influence of deformation, and because a contact type guide member such as a cross roller guide is used for the stage, the mechanical precision of the guide surface and the guide friction due to mechanical friction There were problems such as life span.

As a stage drive device, a linear motor having a non-contact structure on the stator side and the mover side is used, and the XY stage is directly driven by the mover of the linear motor. Since the mechanism is not required, the reliability and accuracy of the XY stage drive can be improved, but it causes the position fluctuation of the charged particle beam due to the leakage magnetic field from the linear motor. As a countermeasure, it is possible to considerably reduce the leakage magnetic field by magnetically shielding the linear motor with a member of high magnetic permeability, but to avoid mechanical interference between the mover and stator of the linear motor. In addition, it is necessary to provide two openings in the magnetic shield of the mover section. As a result, since it is difficult to suppress the leakage magnetic field from the opening of the magnetic shield, it is difficult to dispose the stage driving device in the vacuum chamber and drive the stage with high accuracy without using the connecting mechanism.

The present invention has been made in consideration of the above circumstances, and it is an object of the present invention to arrange a linear motor in a vacuum chamber which could not be used in the vacuum chamber due to a leakage magnetic field. It is another object of the present invention to provide a charged particle beam exposure apparatus capable of driving an XY stage with high accuracy by directly connecting the stage drive device of a linear motor and using a non-contact type fluid bearing for the XY stage.

[0008]

To achieve the above object, a charged particle beam exposure apparatus according to the present invention, a charged particle beam exposure apparatus, a semiconductor device manufacturing method, a semiconductor manufacturing factory, and a charged particle beam exposure apparatus maintenance method. Is mainly provided with the following configurations.

That is, a charged particle beam exposure apparatus for exposing a pattern on a substrate by using a charged particle beam holds a surface plate made of a magnetic material installed in a vacuum chamber and the substrate in the vacuum chamber. A stage for positioning the substrate at an exposure position on the surface plate by a linear motor drive, a fluid bearing for floating the stage from the surface plate by supplying pressurized fluid, the surface plate and the stage Magnetic force means for generating a magnetic attraction force to apply a pressure to the floating of the stage by the supply of the pressurized fluid, the stage comprising:
A correction magnetic field that cancels the leakage magnetic field in the opening of the magnetic shield material in order to remove the leakage magnetic field leaking from the opening of the magnetic shield material that suppresses the magnetic field generated from the linear motor when the stage is moved. The leakage magnetic field is removed by a plurality of correction electromagnetic coils for generating the magnetic field and an exciting current control means for controlling the correction electromagnetic coils.

The above charged particle beam exposure apparatus further comprises stage position detecting means for measuring the position of the stage, and the exciting current control means, based on the position information of the stage measured by the stage position detecting means, An exciting current value to be supplied to the correction electromagnetic coil is determined.

In the above charged particle beam exposure apparatus, the exciting current control means calculates a corrected exciting current value of the correction electromagnetic coil for each drawing position based on the position information by the stage position detecting means. To do.

In the above charged particle beam exposure apparatus, storage means for storing a correction exciting current value of the correction electromagnetic coil corresponding to each of the drawing positions is provided, and the exciting current control means is provided for the position of the stage at the time of exposure. Based on the information
The correction exciting current value of the correction electromagnetic coil stored in the storage means is determined.

Further, a method of manufacturing a semiconductor device includes a step of installing a plurality of semiconductor manufacturing apparatuses including the above charged particle beam exposure apparatus in a factory, and a step of manufacturing a semiconductor device using the plurality of semiconductor manufacturing apparatuses. , Are provided.

In the method of manufacturing a semiconductor device described above, a step of connecting the plurality of semiconductor manufacturing apparatuses by a local area network, a step of connecting the local area network and an external network outside the factory, and the local area network And a step of acquiring information on the charged particle beam exposure apparatus from a database on the external network using the external network, and a step of controlling the charged particle beam exposure apparatus based on the acquired information. It is characterized by including.

A semiconductor manufacturing factory, wherein the semiconductor manufacturing factory includes a plurality of semiconductor manufacturing apparatuses including the charged particle beam exposure apparatus described above, a local area network connecting the plurality of semiconductor manufacturing apparatuses, and the local area network. A gateway for connecting the area network and an external network outside the semiconductor manufacturing plant is provided.

The maintenance method of the charged particle beam exposure apparatus is as follows:
A step of preparing a database for accumulating information about maintenance of the charged particle beam exposure apparatus on an external network outside the factory where the charged particle beam exposure apparatus is installed; and the charged particles in a local area network in the factory. And a step of maintaining the charged particle beam exposure apparatus based on the information stored in the database by using the external network and the local area network. .

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION <Embodiment 1> As an example of a charged particle beam exposure apparatus, an example of an electron beam exposure apparatus is shown in this embodiment.

FIG. 1 shows an electron beam exposure apparatus according to the present invention. A vacuum chamber 100 is evacuated by a vacuum pump (not shown). Vacuum chamber 100
Inside, an electron optical system 1, a wafer stage 2, and a length measuring interferometer 3 for measuring the position of the wafer stage 2 are arranged. The electron optical system 1 converges the electron beam emitted from the electron source by the electron lens system, scans the wafer W by the deflection system, and exposes the photosensitive agent applied on the wafer W. Each component of the electron optical system 1 is controlled by the electron optical system controller 4.

Next, the wafer stage 2 will be described. Reference numeral 21 is a stage surface plate made of a magnetic material, 22 is a Y stage and a linear motor mover that can move in the Y direction (direction perpendicular to the paper surface) on the surface plate, and 23 is a surface plate. The X stage is movable in the X direction (left and right in the plane of the drawing). A fine movement stage (not shown) is mounted on the X stage 23. Zθ stage 2
An electrostatic chuck (not shown) for attracting and fixing the wafer W and mirrors MX, MY (not shown) for the interferometer 3 for length measurement are provided on the surface 4.
Is installed. The mirror MX is for measuring the position of the stage in the X-axis direction, and is not shown.
Is for measuring the position of the stage in the Y-axis direction.

Reference numeral 25 is a stator portion of the linear motor. Two
Reference numerals 7a, 27b and 27c are static pressure air bearings, and the X stage 23 and the Y stage 22 are supported by these static pressure bearings. In the vicinity of the static pressure air bearing, there is a pressurizing mechanism (not shown) by magnetic force. Since this static pressure air bearing is used in a vacuum chamber, it is provided with a porous pad for supplying gas and a labyrinth partition wall for preventing outflow of gas. The labyrinth partition is provided outside the porous pad, and the gas ejected from the porous pad is vacuum-adsorbed between the partitions to prevent the gas from leaking to the outside of the bearing. Of these static pressure bearings, 27a and 27c are provided in the Y-axis direction, support the X stage and its linear motor mover section 23, and follow a guide 22a connected to the Y stage and the linear motor mover section 22. And guides the X stage and the linear motor mover unit 23. Also, 27
b supports the X stage 23 from below and guides the X stage 23 along the surface plate 21, and 27a and 27c respectively support the Y stage 22 from below and guide the Y stage 22 along the surface plate 21. There is.

FIG. 2 shows the Y stage 22 and the X stage 2.
FIG. 3 is a plan view of 3 viewed from the stage surface plate 21. In the figure, each MG is a magnet unit, and has, for example, a permanent magnet as magnetic force means and yokes provided on both sides thereof. These magnet units, as a pressurizing mechanism,
A magnetic attraction force is applied between the X stage 23, the Y stage 22 and the stage surface plate 21. When the pressurized fluid is supplied to the static pressure bearings (27a, 27b, 27c) to levitate the moving body by the pressurizing mechanism, the moving body is prevented from inclining due to variations in the characteristics of the bearings, and it is always constant. I try to maintain my posture. In a wafer stage used in the atmosphere, as a pressurizing mechanism, there is a method for applying a negative pressure by sucking air between the X stage 23, the Y stage 22 and the stage surface plate. like,
If the wafer stage is used in a vacuum, magnetic means is the only way.

Except for the horizontal (X direction) guide plate 22a of the X stage 23, the surfaces of the Y stage 22 and the X stage 23 reduce the influence of the magnetic field from the pressurizing magnet unit on the electron beam. Therefore, it is covered with a multilayer magnetic shield material (for example, permalloy).

Next, the operation of the length measuring interferometer 3 shown in FIG. 1 will be described. In the interferometer 3 for length measurement, first, a laser beam emitted from a laser light source provided inside is divided into a length measurement beam and a reference beam. Then, the measurement beam is set to Zθ
The beam is reflected toward the mirror MX on the stage 24, and the beam reflected by the mirror MX is received again by the length measuring interferometer 3.

On the other hand, the intensity signal of the interference light between the reference beam reflected by the internal reference mirror and the reflected beam returned by the mirror MX is detected.

Since the measuring beam and the reference beam differ in frequency from each other by a small amount Δf at the emission stage, a signal whose frequency changes from Δf according to the moving speed of the mirror MX in the X direction is output. The intensity signal of the interference light of both beams is processed by the stage position detection unit 5, so that the amount of change in the optical path length of the measurement beam based on the optical path length of the reference beam, in other words, the mirror fixed to the stage. The coordinate of MX in the X direction is measured with high resolution and high accuracy with reference to the reference mirror. Similarly, by a length measuring interferometer (not shown) that detects the position of the wafer stage in the Y direction, the Y direction coordinate of the mirror MY (not shown) fixedly mounted on the wafer stage 2 is based on the reference mirror. Therefore, it can be measured with high resolution and high accuracy.

FIG. 3 is a diagram showing the external appearance of a drive mechanism using a linear motor. One linear motor stator 25 is used for the X drive, and two linear motor stators 25 are used for the Y axis drive. The linear motor stator 25 for driving the X axis has a structure embedded in the guide 22a. The stator 25 is obtained by inserting a plurality of coils arranged in the stroke direction into a frame.
Is composed of a box-shaped magnet unit 29. This is a method of generating thrust by selectively passing an electric current through the coils of the stator depending on the position of the mover. The mover 28 of each linear motor is provided with a multilayer magnetic shield (not shown). Figure 1
The Zθ stage 24 is mounted on the top plate of the X stage 23 in FIG. 3 and is positioned in the plane in the X axis direction and the Y axis direction. The vacuum chamber 100 in FIG. 1 is provided with X and Y axis linear motors as shown in FIG. 3 as a drive mechanism, and the X axis and Y axis stages are attached to the mover of the linear motor, respectively. Then, a method of driving the stage of each axis by a mover of a linear motor is adopted.

FIG. 4 shows the detailed structure of the linear motor and the magnetic shield. The linear motor is roughly composed of a mover section 23 and a stator section 25, and each has a non-contact structure. In addition, the permanent magnet 2 arranged in the mover portion 23
9 and a yoke 11 for forming a magnetic circuit of magnetic flux from the magnet, and a multilayer magnetic shield 1 made of a ferromagnetic material having a high magnetic permeability for suppressing a leakage magnetic field from the permanent magnet 29.
2 is provided. As mentioned above, this magnetic shield 1
In order to avoid mechanical interference between the mover and the stator of the linear motor, it is necessary to provide two openings 13 in the position 2. The magnetic field generated by the permanent magnet 29 leaks from this opening 13. A correction electromagnetic coil 14 for suppressing this magnetic field is arranged in the two openings 13. Figure 5
It is a figure which shows the leakage magnetic field distribution from the magnetic shield of a mover. The bright portion shows a strong magnetic field distribution, and the magnetic field leaks from the opening 13 and is widely distributed in space. It was analyzed as a result of numerical calculation that the maximum magnetic field component of this magnetic field was the moving direction (X component) of the linear motor mover. In order to cancel the magnetic field component, a rectangular coil may be arranged at the edge of the opening 13 to generate a demagnetizing field against the leakage magnetic field and cancel it.

FIG. 6 shows a linear motor moving direction of 400 mm.
It is a figure which shows the exciting current value of a correction magnetic field coil, and the variation | change_quantity of the leakage magnetic field intensity on a wafer surface within the range of a stroke.
Without correction coil (excitation current of correction electromagnetic coil is 0
mA), the fluctuation amount of the leakage magnetic field is 0 mG to -0.4 m.
G, and when the exciting current of the correction electromagnetic coil is 3 mA,
It is 0 mG to -0.1 mG, which is reduced by about 1/3. Estimating the position variation of the electron beam due to such a magnetic field variation, if the acceleration voltage is 50 KV and the work distance (distance from the lower part of the objective lens to the wafer surface) is 20 mm, the position variation can be reduced to about 5 nm.

Next, a method of controlling the exciting current of the correction electromagnetic coil will be described below. FIG. 7 is a flowchart illustrating a method of controlling the exciting current. First, before the correction exposure, the magnetic field measurement probe is set on the exposure surface (step S
701) and drives the XY stage (step S70
2) Obtain the optimum exciting current value (exciting current value when the amount of fluctuation of the leakage magnetic field is minimum) for each stripe (step S
703). The relationship between the stripe position and the set excitation current value data is obtained, and the data is stored in the storage device 6 (FIG. 1) (step S704). During exposure, while the stage moves to the next drawing stripe, the drawing stripe position is obtained from the stage position information obtained by the stage position detection unit 5 (step S705). The exciting current value corresponding to the drawing stripe position is obtained from the storage device 6, the exciting current value of the correction electromagnetic coil is determined, and the current value data is sent to the exciting current control unit 9 (step S706). The exciting current control unit 9 is composed of a DA converter and a constant current circuit, and outputs the transferred current value data to the exciting coil as a stabilized analog current (step S707).
Since the processing of this exciting current may be performed when the stage moves between the drawing stripes, high speed processing is not required. Further, the calibration of the optimum exciting current value of the correction electromagnetic coil does not need to be performed every time the wafer is drawn because the leakage magnetic field from the permanent magnet of the linear motor does not change frequently.

As described above, according to this embodiment,
Conventionally, a linear motor that could not be used in a vacuum chamber due to a leakage magnetic field was shielded from the leakage magnetic field from the motor with a multilayer magnetic shield, and the leakage magnetic field from the magnetic shield opening was provided in the opening. By canceling with the correction electromagnetic coil, the linear motor can be arranged in the vacuum chamber, and by using a non-contact type fluid bearing for the XY stage, the XY stage can be driven with high accuracy.

<Second Embodiment (Embodiment of Semiconductor Production System)> Next, a semiconductor device (semiconductor chip such as IC or LSI, liquid crystal panel, CC, etc.) using the above exposure apparatus.
D, thin film magnetic head, micromachine, etc.) will be described as an example. This is to perform maintenance services such as troubleshooting of a manufacturing apparatus installed in a semiconductor manufacturing factory, periodic maintenance, or software provision using a computer network outside the manufacturing factory.

FIG. 8 shows the entire system cut out from one side. In the figure, 1010 is a business office of a vendor (apparatus supplier) that provides semiconductor device manufacturing equipment. As an example of a manufacturing apparatus, a semiconductor manufacturing apparatus for various processes used in a semiconductor manufacturing factory, for example,
Pre-process equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film forming equipment,
Flattening equipment, etc.) and post-process equipment (assembling equipment, inspection equipment, etc.) are assumed. Within the business office 1010 is a host management system 1080 that provides a maintenance database for manufacturing equipment, a plurality of operating terminal computers 1100, and a local area network (LA) that connects these to form an intranet.
N) 1090 is provided. Host management system 1080 is a LAN
1090 is the Internet, which is the external network of the office
It is equipped with a gateway for connecting to the 1050 and a security function for restricting access from outside.

On the other hand, 1020 to 1040 are manufacturing plants of semiconductor manufacturers as users of manufacturing equipment. The manufacturing factories 1020 to 1040 may be factories belonging to different manufacturers or may be factories belonging to the same manufacturer (for example, a factory for a pre-process and a factory for a post-process). Each of the plants 1020 to 1040 has a plurality of manufacturing equipments 10
60, a local area network (LAN) 1110 that connects them to form an intranet, and each manufacturing device 10
A host management system 1070 is provided as a monitoring device that monitors the operating status of the 60. The host management system 1070 provided in each factory 1020 to 1040 is the LAN 11 in each factory.
10 is the external network of the factory Internet 1050
A gateway for connecting to. As a result, the host management system 1080 on the vendor 1010 side can be accessed from the LAN 1110 of each factory via the Internet 1050. Here, typically, the host management system 1080
Security features allow only a limited number of users to access the host management system 1080.

In this system, the factory side notifies the vendor side of status information indicating the operating status of each manufacturing apparatus 1060 (for example, a symptom of the manufacturing apparatus in which a trouble has occurred) via the Internet 1050, and responds to the notification. Response information (for example, information instructing a troubleshooting method, software or data for troubleshooting), the latest software, and maintenance information such as help information can be transmitted from the vendor side to the factory side. Data communication between each factory 1020 to 1040 and vendor 1010 and LAN 11 in each factory
Data communication in 10 is typically a communication protocol (TCP / I) commonly used on the Internet.
P) is used. Instead of using the Internet as an external network outside the factory, it is also possible to use a highly secure leased line network (ISDN or the like) that cannot be accessed by a third party.
Further, the host management system is not limited to the one provided by the vendor, and a user may construct a database and place it on an external network so that the user can access the database from a plurality of factories.

Now, FIG. 9 is a conceptual diagram showing the entire system of this embodiment cut out from a side different from that of FIG. In the above example, a plurality of user factories each equipped with a manufacturing apparatus and a management system of a vendor of the manufacturing apparatus are connected by an external network, and production management of each factory or at least one unit is performed via the external network. The information of the manufacturing apparatus was data-communicated. On the other hand, in this example,
A factory equipped with a plurality of manufacturing devices of a plurality of vendors and a management system of each vendor of the plurality of manufacturing devices are connected to each other via an external network outside the factory to perform data communication of maintenance information of each manufacturing device. is there. In the figure, 2010 is a manufacturing plant of a manufacturing device user (semiconductor device manufacturing manufacturer), and a manufacturing device for performing various processes on the manufacturing line of the factory, here an exposure device 2020, a resist processing device 2030, a film forming processing device 2040 has been introduced. Although only one manufacturing factory 2010 is shown in FIG. 9, a plurality of factories are actually networked in the same manner. Each device in the factory is connected by a LAN 2060 to form an intranet, and the host management system 2050 manages the operation of the manufacturing line. On the other hand, the host management system for remote maintenance of the equipment supplied to each of the vendor (equipment supply manufacturer) offices such as the exposure equipment manufacturer 2100, the resist processing equipment manufacturer 2200, and the film deposition equipment manufacturer 2300.
2110, 2210, 2310, which, as described above, include a maintenance database and a gateway for external networks. Host management system 2050 that manages each device in the user's manufacturing plant and management system 21 of each device vendor
10, 2210, and 2310 are connected by the external network 2000, which is the Internet or a dedicated line network. In this system, if a trouble occurs in any of the series of production equipment on the production line, the operation of the production line will be suspended, but remote maintenance via the Internet 2000 will be received from the vendor of the equipment in trouble. This enables quick response and minimizes production line downtime.

Each manufacturing apparatus installed in the semiconductor manufacturing factory has a display, a network interface, and a computer for executing network access software and apparatus operating software stored in a storage device. The storage device is a built-in memory, a hard disk, or a network file server. The network access software includes a dedicated or general-purpose web browser, and provides a user interface having a screen as shown in FIG. 10 on the display. The operator who manages the manufacturing equipment at each factory refers to the screen and the manufacturing equipment model (4010), serial number (4020), trouble subject (4030), date of occurrence (4040), urgency (4050),
Enter information such as symptom (4060), remedy (4070), progress (4080) in the input items on the screen. The input information is transmitted to the maintenance database via the Internet, and the appropriate maintenance information as a result is returned from the maintenance database and presented on the display. The user interface provided by the web browser also realizes the hyperlink function (4100 to 4120) as shown in the figure, allowing the operator to access more detailed information on each item and use the software library provided by the vendor for manufacturing equipment. You can pull out the latest version of the software, or pull out the operation guide (help information) for reference by the factory operator.

Next, a semiconductor device manufacturing process using the above-described production system will be described. FIG. 11 shows the flow of the whole manufacturing process of the semiconductor device.
In step S1 (circuit design), the circuit of the semiconductor device is designed. In step S2 (exposure control data preparation), exposure control data for the exposure apparatus is prepared based on the designed circuit pattern. On the other hand, in step S3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step S4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the mask and wafer prepared above. Next step S5
(Assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer manufactured in Step 4, and an assembly process (dicing, bonding),
It includes an assembly process such as a packaging process (chip encapsulation). In step S6 (inspection), the semiconductor device manufactured in step S5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes and shipped (step S7). For example, the front-end process and the back-end process may be performed in separate dedicated plants,
In this case, maintenance is performed for each of these factories by the remote maintenance system described above. Further, information for production management and device maintenance may be data-communicated between the front-end factory and the back-end factory via the Internet or a leased line network.

FIG. 12 shows a detailed flow of the wafer process. In step S11 (oxidation), the surface of the wafer is oxidized. In step S12 (CVD), an insulating film is formed on the wafer surface. In step S13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step S14 (ion implantation), ions are implanted in the wafer. Step S
In 15 (resist process), a photosensitive agent is applied to the wafer. In step S16 (exposure), a circuit pattern is drawn (exposed) on the wafer by the exposure apparatus described above. Step S
In 17 (development), the exposed wafer is developed. Step S
At 18 (etching), parts other than the developed resist image are scraped off. In step S19 (resist stripping), the unnecessary resist after etching is removed.

By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented in advance, and even if troubles occur, quick recovery is possible, and Productivity can be improved.

[0040]

As described above, according to the present invention, a linear motor which cannot be conventionally used in a vacuum chamber due to a leakage magnetic field is shielded from the leakage magnetic field from the motor by a multilayer magnetic shield, Moreover, by canceling the leakage magnetic field from the magnetic shield opening with the correction electromagnetic coil provided in the opening, the linear motor can be arranged in the vacuum chamber, and the XY stage uses the non-contact type fluid bearing. It is possible to drive the XY stage with high accuracy.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of an electron beam exposure apparatus according to the present invention.

FIG. 2 is a schematic plan view for explaining the configurations of a Y stage 22 and an X stage 23 in the electron beam exposure apparatus according to the present invention.

FIG. 3 is a diagram illustrating a configuration of an XY stage using a linear motor.

FIG. 4 is a diagram showing a linear motor and a magnetic shield structure.

FIG. 5 is a diagram showing a leakage magnetic field distribution.

FIG. 6 is a diagram showing a relationship between a correction electromagnetic coil and a leakage magnetic field.

FIG. 7 is a flowchart illustrating a method for controlling an exciting current of a correction electromagnetic coil.

FIG. 8 is a conceptual view of a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention, as viewed from an angle.

FIG. 9 is a conceptual view of the semiconductor device production system including the exposure apparatus according to the embodiment of the present invention as viewed from another angle.

FIG. 10 is a diagram showing a specific example of a user interface in a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention.

FIG. 11 is a diagram illustrating a flow of a device manufacturing process by the exposure apparatus according to the embodiment of the present invention.

FIG. 12 is a diagram illustrating a wafer process performed by the exposure apparatus according to the embodiment of the present invention.

[Explanation of symbols]

1 Electron optical system 2 Wafer stage 3 Interferometer for length measurement 4 Electro-optical system controller 5 Stage position detector 6 Stage position-correction current data storage device 7, 8 X, Y axis stage drive control unit 9 Correction electromagnetic coil current controller 10 Main control unit 11 Linear motor permanent magnet 12 Multi-layer magnetic shield 13 Magnetic shield opening 14 Correction electromagnetic coil 100 vacuum chamber

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/30 502G F term (reference) 5C001 AA03 CC06 5F031 CA02 HA16 HA53 JA06 JA14 JA17 JA32 KA06 LA03 LA04 LA08 MA27 NA05 PA06 PA30 5F046 AA28 5F056 CB22 EA14

Claims (8)

[Claims] 1. A charged particle beam exposure apparatus that exposes a pattern on a substrate using a charged particle beam, wherein a surface plate made of a magnetic material is provided in a vacuum chamber, and the substrate is held in the vacuum chamber. Then, a stage for positioning the substrate at an exposure position on the surface plate by a linear motor drive, a fluid bearing for floating the stage from the surface plate by supplying pressurized fluid, the surface plate and the stage Magnetic force means for applying a magnetic attraction force to the floating surface of the stage by the supply of the pressurized fluid, the magnetic force means being provided on the opposite surface of the stage. In order to remove a leakage magnetic field leaking from the opening of the magnetic shield material that suppresses the magnetic field generated from the linear motor, the leakage is caused at the opening of the magnetic shield material. A plurality of correction and the electromagnetic coil, the correction and excitation current controlling means for controlling an electromagnetic coil, a charged particle beam exposure apparatus, and removing the leakage magnetic field have for generating a correction magnetic field that cancels the field. 2. A stage position detection means for measuring the position of the stage is further provided, and the excitation current control means supplies the correction electromagnetic coil based on the position information of the stage measured by the stage position detection means. 2. The charged particle beam exposure apparatus according to claim 1, wherein an exciting current value for determining is set. 3. The exciting current control means calculates a corrected exciting current value of the correction electromagnetic coil for each drawing position based on the position information by the stage position detecting means. The charged particle beam exposure apparatus described. 4. A storage unit for storing a correction excitation current value of the correction electromagnetic coil corresponding to each of the drawing positions, wherein the excitation current control unit is based on position information of the stage at the time of exposure. The charged particle beam exposure apparatus according to claim 1 or 3, wherein a correction excitation current value of the correction electromagnetic coil stored in the memory is determined. 5. A method of manufacturing a semiconductor device, comprising the steps of installing a plurality of semiconductor manufacturing apparatuses including a charged particle beam exposure apparatus in a factory, and manufacturing a semiconductor device using the plurality of semiconductor manufacturing apparatuses. The charged particle beam exposure apparatus comprises: a platen made of a magnetic material installed in a vacuum chamber; and holding the substrate in the vacuum chamber, and placing the substrate at an exposure position on the platen. A stage that is positioned by driving a linear motor, a fluid bearing that floats the stage from the surface plate by supplying pressurized fluid, and a magnetic bearing force that is provided on the surface facing the surface plate and the stage. Magnetic force means for applying a pressure to the floating of the stage by the supply of the pressurized fluid, the stage being operated by the linear motor when moving the stage. A plurality of correction electromagnetic coils that generate a correction magnetic field that cancels the leakage magnetic field in the opening of the magnetic shield material in order to remove the leakage magnetic field leaking from the opening of the magnetic shield material that suppresses the generated magnetic field; A method of manufacturing a semiconductor device, comprising: an exciting current control unit that controls the correction electromagnetic coil to remove the leakage magnetic field. 6. A step of connecting the plurality of semiconductor manufacturing apparatuses with a local area network; a step of connecting the local area network with an external network outside the factory; and using the local area network and the external network. And a step of acquiring information about the charged particle beam exposure apparatus from a database on the external network, and a step of controlling the charged particle beam exposure apparatus based on the acquired information. Item 6. A method for manufacturing a semiconductor device according to item 5. 7. A semiconductor manufacturing factory, wherein the semiconductor manufacturing factory includes a plurality of semiconductor manufacturing apparatuses including a charged particle beam exposure apparatus, a local area network connecting the plurality of semiconductor manufacturing apparatuses, and the local area network. And a gateway connecting an external network outside the semiconductor manufacturing factory, the charged particle beam exposure apparatus comprises a surface plate made of a magnetic material installed in a vacuum chamber, and the substrate in the vacuum chamber. A stage for holding and positioning the substrate at an exposure position on the surface plate by driving a linear motor, a fluid bearing for floating the stage from the surface plate by supplying pressurized fluid, the surface plate and the stage And a magnetic attraction force are generated to face the floating of the stage by supplying the pressurized fluid. Magnetic force means for applying a pressure, wherein the stage has a magnetic shield for removing a leakage magnetic field leaking from an opening of a magnetic shield material that suppresses a magnetic field generated from the linear motor when the stage moves. In the opening of the material, a plurality of correction electromagnetic coils that generate a correction magnetic field that cancels the leakage magnetic field, and an exciting current control unit that controls the correction electromagnetic coil are provided to remove the leakage magnetic field. The semiconductor manufacturing plant. 8. A maintenance method for a charged particle beam exposure apparatus, comprising preparing a database for accumulating information on maintenance of the charged particle beam exposure apparatus on an external network outside a factory where the charged particle beam exposure apparatus is installed. And a step of connecting the charged particle beam exposure apparatus to a local area network in the factory, the charged particles based on the information accumulated in the database using the external network and the local area network. Maintaining the line exposure apparatus. The charged particle beam exposure apparatus comprises a surface plate made of a magnetic material installed in a vacuum chamber, holding the substrate in the vacuum chamber, and driving the substrate at an exposure position on the surface plate with a linear motor. Is provided on the surface facing the surface plate and the stage, and a magnetic bearing force is generated to generate the magnetic attraction force. Magnetic force means for applying a pressure to the levitation of the stage due to the supply of pressurized fluid, wherein the stage has an opening of a magnetic shield material that suppresses a magnetic field generated from the linear motor when the stage moves. A plurality of correction electromagnetic coils that generate a correction magnetic field that cancels the leakage magnetic field in the opening of the magnetic shield material in order to remove the leakage magnetic field that leaks from Excitation current control means, and removing the leakage magnetic field has a maintenance method of a charged particle beam exposure apparatus for controlling the correction electromagnetic coil.