JP2003031847A - Method of taking out element, method of transferring element using the same, method of arranging elements, method of manufacturing image display device - Google Patents

Abstract

(57) [Summary] (Modifications) [PROBLEMS] To provide an element extracting method capable of accurately extracting an element, an element transferring method, an element arranging method, and an image display device manufacturing method using the same. I do. A method of taking out elements (3) arranged on a substrate (1) to a suction member (4), the method comprising:
Is provided with a suction hole to be fitted to the element 3 on one main surface and a suction hole 7 formed from the bottom surface of the suction hole to the thickness direction of the suction member 4. The liquid 5 is disposed so as to cover the suction hole 7, and the substrate 1 and the suction member 4 are arranged so that the bottom surface of the suction hole faces the element 3. The liquid 5 brought into contact with the main surface and brought into contact with the element 3 is passed through the suction hole 7.
Suction from the side opposite to the side where the suction holes are formed,
The element 3 is removed, and the element 3 is sucked to hold the element in the suction hole.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of taking out an element when transferring an element such as a semiconductor light emitting element. The method of transferring an element, and further applying this transferring method to microfabrication. The present invention relates to a method of arranging elements for transferring the elements to a wider area and a method of manufacturing the image display device.

[0002]

2. Description of the Related Art At present, electronic devices and the like are constructed by arranging a large number of fine elements, electronic parts, electronic devices, and electronic parts in which they are embedded in an insulator such as plastic. Widely used. For example, when the light emitting elements are arranged in a matrix and assembled into an image display device, a liquid crystal display device (L
An element is formed directly on the substrate such as a CD (Liquid Crystal Display) or a plasma display panel (PDP: Plasma Display Panel), or a single L such as a light emitting diode display (LED display) is formed.
Arranging ED packages is under way.

Here, in an image display device such as an LCD or PDP, since the elements cannot be separated from each other, it is usual to form each element with a pitch of the pixel pitch of the image display device from the beginning of the manufacturing process. It is being appreciated.

On the other hand, in the case of an LED display, L
The ED chip is taken out after dicing, individually connected to external electrodes by wire bonding or bump connection by flip chip, and packaged. In this case, the pixels are arranged at a pixel pitch as an image display device before or after packaging, and this pixel pitch is independent of the element pitch at the time of element formation.

LED (light emitting diode) which is a light emitting element
Is expensive, it is possible to reduce the cost of the image display device using LEDs by manufacturing many LED chips from one wafer. That is, the price of the image display device can be reduced by changing the conventional LED chip size of about 300 μm square to an LED chip of several tens μm square and connecting the LED chips to manufacture the image display device.

Therefore, there is a technique for forming a relatively large display device such as an image display device by forming each device with a high degree of integration and moving each device while separating them over a wide area by transfer or the like. The element 93 is arranged on the adhesive layer 92 on the base substrate 91 as shown in FIG.
As shown in (b), a vacuum suction head 94 is used to
There is a technique for transferring by picking up and placing it on the adhesive layer 96 of another substrate 95 as shown in FIG.

[0007]

By the way, in the case of manufacturing an image display device by a transfer technique, it is necessary to surely transfer the element. Further, efficient transfer and accurate transfer are also required. Then, when performing transfer using the above-described method, first, a process of taking out an element by a vacuum suction head, moving it, and placing it on a substrate is required.

However, for example, a very small element,
For example, when transferring an element of about 150 μm square to 200 μm square, for example, when the flatness of the base substrate 91 is poor,
When the parallelism between the vacuum suction head and the base substrate 91 is not maintained, the element cannot be fitted into a predetermined suction hole provided in the vacuum suction head as shown in FIG. It will be mounted in a tilted state. When the element is thus tilted and mounted on the vacuum suction head, the mounting state of the element cannot be corrected to a normal state because the element is very small. Also,
Even when dust or the like is attached to the surface of the element or the suction hole of the vacuum suction head, the element cannot be properly fitted into the suction hole of the vacuum suction head in a normal state and is inclined as shown in FIG. It will be implemented in the state.

Then, as described above, the element which was mounted on the vacuum suction head in a tilted state and could not be taken out from the substrate in a normal state is transferred and mounted in a tilted state also in the subsequent steps. It ends up being a defective product.

Therefore, the present invention has been devised in view of such conventional circumstances, and provides a method of taking out an element capable of accurately taking out an element, and a method of transferring an element using the same. It is also an object of the present invention to provide an element arraying method and an image display device manufacturing method.

[0011]

In order to achieve the above-mentioned object, a method of taking out an element according to the present invention uses a take-out head having a concave portion corresponding to the shape of the element, and supplies the liquid to the concave portion. Is adsorbed and held.

In the method of taking out the element according to the present invention as described above, since the element is held in advance at a predetermined position corresponding to the adsorption hole by supplying the liquid to the concave portion, the element is adsorbed in a normal state. Retained.

In order to achieve the above object, the element transfer method according to the present invention is an element transfer method for transferring elements arranged on a first substrate onto a second substrate. , A step of transferring the element to the take-out head, and a mounting step of mounting the element taken out by the take-out head on the second substrate, and the take-out step uses a take-out head having a recess corresponding to the shape of the element. The device is characterized in that the device is sucked and held by supplying a liquid to the recess.

In the element transfer method according to the present invention as described above, since the above-mentioned element take-out method is applied, the element is prevented from being mounted in a tilted manner, and the element transfer is accurately performed. .

In order to achieve the above object, the method of arranging elements according to the present invention is a method of arranging elements in which a plurality of elements arranged on a first substrate are rearranged on a second substrate. In the first transfer step, in which the elements are transferred so that the elements are spaced apart from the arrayed elements on the first substrate and the elements are held by the first temporary holding member, A step of hardening the element held by the temporary holding member with resin, a step of dicing the resin to separate each element, and further separating the elements held by the first temporary holding member and hardened by the resin A second transfer step of transferring onto the second substrate, the second transfer step comprising a step of removing the element to a take-out head, and a step of mounting the element taken out by the take-out head onto the second substrate. And the take-out process corresponds to the device shape. Using a pick head with the recess, it is characterized in that the device for holding the adsorption by feeding the liquid to the recess.

In the device arranging method according to the present invention as described above, the transfer of the devices is efficiently and surely performed by using the above-mentioned device taking-out method and transfer method, so that the distance between the devices is increased. The enlarged transfer can be smoothly performed.

Further, in the method of manufacturing the image display device according to the present invention, in the method of manufacturing the image display device in which the light emitting elements are arranged in a matrix, it is separated from the state in which the light emitting elements are arranged on the first substrate. A first transfer step of transferring the light emitting element so as to be in a state and holding the light emitting element on the first temporary holding member; and a step of hardening the light emitting element held by the first temporary holding member with resin. A step of dicing the resin into individual light emitting elements and a second transfer step of transferring the light emitting elements held by the first temporary holding member and solidified with the resin to the second substrate while further separating them. A second transfer step, the second transfer step includes a take-out step of moving the light-emitting element to a take-out head, and a mounting step of mounting the light-emitting element taken out by the take-out head on the second substrate. Have a process and Method of producing the extraction step, using a pick head having concave portions corresponding to the light emitting element shape, the image display apparatus, characterized in that the light emitting element to retain adsorbed by feeding the liquid into the recess.

According to the method for manufacturing an image display device of the present invention as described above, the light emitting elements are arranged in a matrix by the above-mentioned element taking-out method, transfer method and arrangement method to form an image display portion. Therefore, it is possible to efficiently rearrange the light-emitting elements, which are created in a dense state, that is, the degree of integration is increased and the fine processing is performed, so that the light-emitting elements can be rearranged.
Productivity is greatly improved.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a method of taking out elements, a method of transferring elements, a method of arraying, and a method of manufacturing an image display device to which the present invention is applied will be described in detail with reference to the drawings.

First, a method of taking out a basic element will be described. Here, a case will be described in which the adhesive layer 2 is formed on the base substrate 1 serving as a supply source and a plurality of elements 3 arranged and arranged thereon are taken out as shown in FIG.

The base substrate 1 is not particularly limited, and any material can be used in consideration of the combination with the element 3 and the like.

The adhesive layer 2 can adhere and fix the elements 3 when forming the elements 3 in an array, and can peel the elements 3 again when the elements 3 are taken out from the base substrate 1 later. It is a layer considered to be. By forming the adhesive layer 2 on the base substrate 1 and arranging the elements 3 on the adhesive layer 2, the elements 3 can be easily taken out. As such an adhesive layer 2, for example, a sheet made of a thermoplastic resin or a heat release material is suitable. Here, when the thermoplastic resin is used, the thermoplastic resin is plasticized by heating the adhesive layer 2, whereby the adhesive force between the adhesive layer 2 and the element 3 is reduced, and the element 3 is easily formed. It can be peeled off. Further, the thermal release material means a material whose adhesive force can be reduced by foaming or expansion treatment by heating and the adherend can be easily peeled off. That is, in these heat release materials, the foaming agent or expanding agent contained in the material is foamed or expanded by heating, and the adhesive area is reduced to lose the adhesive force. Specifically, for example, JP-B-50-13878, JP-B-51-24534, JP-A-56-61468, JP-A-56-61469, and JP-A-60-25.
No. 2681, etc., a heat-peelable pressure-sensitive adhesive sheet having an adhesive layer containing foam on a substrate, and heat-expandable microspheres, such as those described in JP-A-2000-248240. And a heat-peelable pressure-sensitive adhesive sheet containing a non-heat-expandable pressure-sensitive adhesive layer on at least one surface of a heat-expandable layer that expands by heating, or a base material such as described in JP-A-2000-169808. On at least one side
A heat-peelable pressure-sensitive adhesive sheet provided with a heat-expandable layer containing heat-expandable microspheres and a pressure-sensitive adhesive layer containing a pressure-sensitive adhesive substance, and preferably using a heat-peelable pressure-sensitive adhesive sheet whose substrate has heat resistance and elasticity. You can

Further, the adhesive layer 2 may have a structure in which a release layer is formed on the base substrate 1 and an adhesive layer is further formed on the release layer. This release layer is, for example, a fluorine coat,
It can be made using a silicone resin, a water-soluble adhesive (for example, PVA), polyimide, or the like. Then, for the adhesive layer, for example, a UV adhesive material whose adhesive strength is reduced when UV is irradiated can be used. When the adhesive layer has such a configuration, the back surface of the base substrate 1 is irradiated with, for example, an excimer laser. Thus, for example, when a quartz substrate is used as the base substrate 1 and the adhesive layer 2 is formed using polyimide, peeling occurs due to ablation of the polyimide at the interface between the polyimide and the quartz substrate, and the element 3 can be peeled off. Becomes

It should be noted that the adhesive layer 2 is not limited to the above-mentioned one, and the elements 3 can be adhered and fixed when the elements 3 are formed in an array as described above, and the elements 3 can be later formed. When taking out from the base substrate 1, the element 3
It suffices if it can be peeled off.

The element 3 can be applied to any element. For example, a light emitting element, a liquid crystal control element,
A photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element, a micro magnetic element, a micro optical element, etc. can be mentioned. Further, in the present invention, an electronic component or the like obtained by embedding the above-described element in an insulator such as plastic into a chip is also included in the element.

Next, as shown in FIG. 2, the liquid 5 is applied to the suction holes 6 of the vacuum suction head 4 which is the take-out head for taking out the element 3, and the liquid is left for a predetermined time, for example, 5 minutes. By leaving the liquid 5 applied to the suction holes 6 of the vacuum suction head 4, the liquid 5 is caused to undergo a capillary phenomenon as shown in FIG.
It is injected into the suction hole 7 formed at the center of the suction hole 6 as shown in FIG.

Here, in the vacuum suction head 4, suction holes 6 for suctioning and mounting the element 3 are formed at a predetermined interval on the main surface on the side where the element 3 is sucked. Further, the shape and size of the suction hole 6 are formed so as to fit with the element 3. A suction hole 7 for sucking the element 3 is provided in the center of each suction hole 6 in the thickness direction of the vacuum suction head 4. Further, the vacuum suction head 4 is configured such that air can be sent to the suction hole 7 from the back surface, that is, the side opposite to the side where the suction holes 6 are formed, or the air in the suction holes 7 can be sucked. There is.

The liquid 5 is not particularly limited, but the volatile liquid 5 is preferable. By using the volatile liquid 5, the liquid 5 does not remain around the element 3 after the liquid 5 is sucked, which will be described later. Therefore, the remaining liquid 5 does not have a bad influence on the element 3. Alcohols such as ethanol are suitable as the liquid 5. It should be noted that, among the volatile liquids 5, acetone or the like adversely affects the element 3 in consideration of the type of the element 3 because, for example, when the element 3 is used with the adhesive, the acetone dissolves the adhesive. It is preferable to appropriately select those that do not give. The method of applying the liquid 5 to the adsorption holes 6 is not particularly limited as long as it can uniformly apply a predetermined amount of the liquid 5 to each adsorption hole 6, and for example, a brush or a cotton swab is used. Can be applied.

Next, a predetermined amount of air is sent into the suction hole 7 from the lower side of the vacuum suction head 4, that is, the side opposite to the side where the suction hole 6 is formed. By sending a predetermined amount of air into the suction holes 7, the liquid 5 injected into the suction holes 7
Only a predetermined amount is pushed upward, that is, pushed out to the suction hole 6 side,
As shown in FIG. 4, the suction holes 6 are accumulated around the suction holes 7 on the bottom surface of the suction holes 6 so as to cover the suction holes 7.

Next, as shown in FIG. 5, the base substrate 1
And the vacuum suction head 4 have a desired positional relationship, that is, the elements 3 arranged on the base substrate 1 and the suction holes 6 have a corresponding positional relationship. With the base substrate 1 and the vacuum suction head 4 facing each other.
Place and. Further, as shown in FIG.
And the vacuum suction head 4 are brought close to each other to bring the liquid 5 accumulated in the suction hole 6 into contact with the element 3. Thereby, the element 3
Is pulled toward the adsorption holes 6 by the surface tension of the liquid 5,
It is held at a predetermined position, that is, a position corresponding to the suction hole 6.

Then, in this state, as shown in FIG. 7, the adhesive force between the element 3 and the base substrate 1 is reduced, and
The liquid 5 in the suction hole 7 is sucked to the lower side of the suction hole 7, that is, the side opposite to the side where the suction hole 7 is provided, and sucked out from the suction hole 7. Here, in order to reduce the adhesive force between the element 3 and the base substrate 1, for example, when a thermoplastic resin is used as the adhesive layer 2 for arranging the element 3 on the base substrate 1, the base substrate 1 in this state is By irradiating the adhesive layer 2 at a position corresponding to the element 3 with laser light from the back surface, that is, the side opposite to the side where the elements 3 are arranged, the adhesive layer 2 is heated and plasticized, The adhesive force with the element 3 can be reduced. At this time, the element 3 is pulled toward the bottom surface side of the suction hole 6 as the liquid 5 is sucked, and fits into the suction hole 6 in a normal positional relationship. Then, even after the liquid 5 has been sucked out, the suction is further continued to pull the element 3 downward, and finally the element 3 and the suction hole 6 are fitted together. The above completes the removal of the element 3 from the base substrate 1.

Here, the adhesive force of the adhesive layer 2 to the element 3 is
It is not necessary to completely eliminate it, and the adhesive force of the adhesive layer 2 with the element 3 may be smaller than the suction force of the vacuum suction head 4 for sucking the element 3 described later. That is, by making the adhesive force of the adhesive layer 2 with the element 3 smaller than the suction force of the vacuum suction head 4, the element 3 can be taken out from the base substrate 1 onto the vacuum suction head 4 as described later. .

In the above-mentioned taking-out method, since the element 3 is held at the position corresponding to the suction hole 6 by the liquid 5 before being sucked and fitted into the suction hole 6, the element 3 is sucked. Then, when the element 3 is fitted into the suction hole 6, the element 3 can be fitted into the suction hole 6 in a normal positional relationship. This allows the element 3 to be fitted in the suction hole 6 in a normal positional relationship even when the flatness of the base substrate 1 is poor, or the parallelism between the vacuum suction head 4 and the base substrate 1 is not maintained. be able to.

Further, in this method, when the element 3 is sucked, the liquid 5 exists between the element 3 and the bottom surface of the suction hole 6 and in the suction hole 7, so that the influence of the air flow characteristics is affected. Never receive. That is, in the method of taking out the element using the conventional suction device, the space between the element 3 and the bottom surface of the suction hole 6 and the suction hole 7 were filled with air. In this state, when the element 3 is sucked through the suction hole 7 in the same manner as described above, the air between the element 3 and the bottom surface of the suction hole 6 and the air in the suction hole 7 enter the viscous region. In this case, the suction state of the element 3 becomes unstable due to the influence of the air flow characteristics in the viscous region and cannot be pulled straight in the desired direction. Therefore, the element 3 is fitted in the suction hole 6 in an inclined state. I will end up. This phenomenon is more remarkable as the distance between the element 3 and the bottom surface of the suction hole 6 is shortened, that is, the elements are arranged closer to each other, and the size of the element 3 is smaller, and the size of the element 3 is larger. In the case where the angle is small, it was not possible to correct the state of being stuck in the suction hole 6 in an inclined state.

That is, as the size of the element becomes smaller, the size of the suction hole 6 becomes smaller accordingly. And
When the size of the suction holes 6 is on the micrometer level, for example, about 100 μm or less in diameter, the air sucked through the suction holes 7 enters the viscous region. Here, when trying to adsorb the element 3 to the vacuum suction head 4 by sucking air in the viscous region, the flow characteristic of the air in the viscous region is different from the flow characteristic of normal air, so the sucked element Problems such as tilting of the element 3 occur and the element 3 cannot be fitted into the suction hole 6 properly.

On the other hand, in the method described above, the element 3
The presence of the liquid 5 between the suction hole 6 and the bottom surface of the suction hole 6 and the suction hole 7 prevent the flow characteristics of the air entering the viscous region when the element 3 is sucked from being affected. Therefore, the adsorption state of the element 3 is prevented from becoming unstable. Thereby, the element 3 can be fitted into the suction hole 6 in a normal positional relationship. Therefore, by using this method, the element 3 can be operated in a normal state on the base substrate 1
It is possible to take out from the suction device.

Further, in the conventional method, when dust or the like is attached to the surface of the element 3 or the suction holes 6, the dust is caught between the element 3 and the suction holes 6, so that the element 3 Cannot be fitted into the suction hole 6 in a normal state and is mounted in an inclined state.

However, in the above method,
The liquid 5 takes in dust and the like adhering to the surface of the element 3 and the suction holes 6, and further sucks the liquid 5 to remove the dust and the like from the fitting portion between the element 3 and the suction holes 6. Due to the presence of the liquid 5, the element 3 and the adsorption hole 6
It is possible to obtain the effect of cleaning the fitting portion with. Therefore, in this method, since there is nothing in the fitting portion between the element 3 and the suction hole 6 that prevents normal fitting, the element 3 can be fitted in the suction hole 6 in a normal state.

Next, as an application example of the above-mentioned device taking-out method, a device transferring method by a two-step expansion transfer method, a device arranging method and an image display device manufacturing method will be explained.

The method of transferring elements, the method of arranging the elements and the method of manufacturing the image display device according to the present embodiment are different from those in which the elements formed on the first substrate with high integration are arranged on the first substrate. Is transferred to the temporary holding member so as to be in a separated state, and then the two-step enlargement transfer is performed in which the element held by the temporary holding member is further separated and transferred to the second substrate. In this example, the transfer has two stages,
The transfer can be performed in three stages or in multiple stages depending on the degree of enlargement in which the elements are arranged apart from each other.

FIG. 8 is a diagram showing the basic steps of the two-step expansion transfer method. First, elements 12 such as light emitting elements are densely formed on the first substrate 10 shown in FIG. By forming the elements densely, the number of elements generated on each substrate can be increased, and the product cost can be reduced. The first substrate 10 is a substrate on which various elements can be formed, such as a semiconductor wafer, a glass substrate, a quartz glass substrate, a sapphire substrate, and a plastic substrate. Each element 12 is formed directly on the first substrate 10. Alternatively, it may be an array of those formed on another substrate.

Next, as shown in FIG. 8B, the first substrate 1
Each element 12 is transferred from 0 to the first temporary holding member 11 indicated by a broken line in the drawing, and each element 12 is held on the first temporary holding member 11. Here, the adjacent elements 12 are spaced apart and arranged in a matrix as shown. That is, the elements 12 are transferred so as to widen the spaces between the elements in the x direction, but are also transferred so as to widen the spaces between the elements also in the y direction perpendicular to the x direction. The distance separated at this time is not particularly limited, and as an example, the distance can be set in consideration of the resin portion formation and the electrode pad formation in the subsequent process. The first substrate 1 is placed on the first temporary holding member 11.
All the elements on the first substrate 10 can be spaced apart from each other and transferred when the transfer is performed from 0. In this case, the size of the first temporary holding member 11 is the number of elements 12 arranged in a matrix (in the x direction and the y direction, respectively).
The size may be equal to or larger than the size obtained by multiplying by the distance separated by. It is also possible to transfer a part of the elements on the first substrate 10 to the first temporary holding member 11 with a space therebetween.

After such a first transfer process, FIG.
As shown in FIG. 5, since the elements 12 existing on the first temporary holding member 11 are separated from each other, the resin surrounding the elements and the electrode pads are formed for each element 12. The resin coating around the element is formed for facilitating the formation of the electrode pad and facilitating the handling in the next second transfer step. As will be described later, the electrode pad is formed after the second transfer step in which the final wiring is continued, so that the electrode pad is formed in a relatively large size so that wiring failure does not occur at that time. The electrode pads are not shown in FIG. 8 (c). The resin-formed chip 14 is formed by covering each element 12 with the resin 13. The element 12 is located substantially in the center of the resin-formed chip 14 on a plane, but may be located at a position deviated to one side or a corner side.

Next, as shown in FIG. 8D, the second transfer step is performed. In the second transfer step, the second substrate 15 is arranged so that the elements 12 arranged in a matrix on the first temporary holding member 11 are further separated for each resin-formed chip 14.
Transcribed on.

The above-mentioned element take-out method is applied to this second transfer step, which will be described later in detail.

Also in the second transfer step, the adjacent element 1
2 are separated from each other with the resin forming chip 14 and are arranged in a matrix as shown. That is, the elements 12 are transferred so as to widen the spaces between the elements in the x direction, but are also transferred so as to widen the spaces between the elements also in the y direction perpendicular to the x direction. Assuming that the positions of the elements arranged by the second transfer step correspond to the pixels of the final product such as an image display device, approximately an integer multiple of the pitch between the initial elements 12 is arranged by the second transfer step. It is the pitch of the elements 12. Here, from the first substrate 10 to the first temporary holding member 11
, And the expansion ratio of the separated pitch on the second substrate 15 from the first temporary holding member 11 is m, the value E of a substantially integer multiple is expressed as E = nxm. Be done.

Wiring is provided to each element 12 separated from the second substrate 15 together with the resin-formed chip 14. This time,
Wiring is performed by using the electrode pad or the like previously formed while suppressing connection failure as much as possible. This wiring is, for example, the element 12
Is a light emitting element such as a light emitting diode, a p electrode,
Including a wiring to the n-electrode, in the case of a liquid crystal control element, a selection signal line, a voltage line, a wiring such as an alignment electrode film and the like are included.

In the two-step enlargement transfer method shown in FIG. 8, the electrode pad and the resin can be hardened by utilizing the separated space after the first transfer, and the wiring is provided after the second transfer. However, wiring is performed while suppressing the connection failure as much as possible by using the electrode pad or the like previously formed. Therefore, the yield of the image display device can be improved. In addition, in the two-step magnifying transfer method of this example, the step of separating the distance between the elements is two steps. Will be reduced. That is, for example, here, from the first substrate 10 to the first temporary holding member 11
If the enlargement ratio of the separated pitch in 2 is set to 2 (n = 2) and the enlargement ratio of the separated pitch in the second substrate 15 from the first temporary holding member 11 is set to 2 (m = 2), once When it is attempted to transfer to an area enlarged by the transfer of, the final expansion rate is 4 times 2 × 2, and it is necessary to transfer the squared 16 times, that is, perform the alignment of the first substrate 16 times.
In the two-step expansion transfer method of this example, the number of times of alignment is simply 4 times the expansion rate 2 squared in the first transfer step and 4 times the expansion rate 2 squared in the second transfer step. It will be 8 times in total. That is, when the same transfer magnification is intended, since (n + m) ² = n ² +2 nm + m ² , the number of transfers can be reduced by 2 nm. Therefore, the manufacturing process also saves time and cost by the number of times, which is useful especially when the expansion rate is large.

In the two-step enlargement transfer method shown in FIG. 8, the element 12 is, for example, a light emitting element, but is not limited to this, and other elements such as a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, and a thin film transistor. Element, thin film diode element, resistance element, switching element, micro magnetic element,
It may be an element selected from minute optical elements or a portion thereof, or a combination thereof.

In the second transfer step, the resin-formed chip is treated and transferred from the temporary holding member to the second substrate. The resin-formed chip will be described with reference to FIGS. 9 and 10.

The resin-formed chip 20 is obtained by hardening the elements 21 arranged apart from each other with resin 22.
Such a resin-formed chip 20 can be used when the element 21 is transferred from the temporary holding member to the second substrate.

The resin-formed chip 20 has a substantially flat plate shape and its main surface has a substantially square shape. The shape of the resin-formed chip 20 is a shape formed by solidifying a resin 22, and specifically, an uncured resin is applied to the entire surface so as to include each element 21, and the edge portion is formed after the resin is cured. It is a shape obtained by cutting the substrate by dicing or the like.

Electrode pads 23 and 24 are formed on the front surface side and the back surface side of the substantially plate-shaped resin 22, respectively. The electrode pads 23, 24 are formed on the entire surface by the electrode pads 23, 2
It is formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer which is a material of No. 4, and patterning it into a required electrode shape by a photolithography technique. These electrode pads 23 and 24 are formed so as to be respectively connected to the p electrode and the n electrode of the element 21 which is a light emitting element, and a via hole or the like is formed in the resin 22 when necessary.

Here, the electrode pads 23 and 24 are formed on the front surface side and the back surface side of the resin-formed chip 20, respectively, but it is possible to form both electrode pads on one surface, for example, in the case of a thin film transistor. Since there are three electrodes of a source, a gate, and a drain, three or more electrode pads may be formed. Electrode pad 23,
The position of 24 is deviated on the flat plate so that the contacts do not overlap even if the contacts are taken from the upper side in the final wiring formation. The shape of the electrode pads 23, 24 is not limited to the square shape, but may be another shape.

By constructing such a resin-formed chip 20, the periphery of the element 21 is covered with the resin 22 and the electrode pads 23 and 24 can be accurately formed by flattening, and the electrode pad is formed in a wider area than the element 21. 23, 24
Can be extended. As will be described later, since the final wiring is performed after the second transfer step, wiring using the electrode pads 23 and 24 of a relatively large size prevents wiring defects.

Next, FIG. 11 shows the structure of a light emitting element as an example of an element used in the two-step expansion transfer method of this example.
11A is a sectional view of the element, and FIG. 11B is a plan view. This light emitting element is a GaN-based light emitting diode, for example, an element that is crystal-grown on a sapphire substrate. In such a GaN-based light emitting diode, laser ablation occurs due to laser irradiation through the substrate, and film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer due to the phenomenon that nitrogen in GaN is vaporized. It has a feature that element isolation can be facilitated.

First, regarding the structure, a hexagonal pyramidal GaN layer 32 selectively grown is formed on a base growth layer 31 made of a GaN-based semiconductor layer. An insulating film (not shown) is present on the underlying growth layer 31, and the hexagonal pyramidal GaN layer 32 is MOCVD-formed in the opening of the insulating film.
It is formed by the method. The GaN layer 32 is a pyramid-shaped growth layer covered with an S plane (1-101 plane) when the main surface of the sapphire substrate used during growth is the C plane, and is a region doped with silicon. is there. This G
The inclined S-plane portion of the aN layer 32 functions as a clad having a double hetero structure. An InGaN layer 33, which is an active layer, is formed so as to cover the inclined S-plane of the GaN layer 32, and a magnesium-doped GaN layer 34 is provided outside thereof.
Is formed. This magnesium-doped GaN layer 34
Also functions as a clad.

In such a light emitting diode, the p electrode 3
5 and the n-electrode 36 are formed. The p-electrode 35 is Ni / Pt formed on the magnesium-doped GaN layer 34.
/ Au or Ni (Pd) / Pt / Au. The n-electrode 36 is formed by vapor-depositing a metal material such as Ti / Al / Pt / Au at the opening of the insulating film (not shown). When the n electrode is taken out from the back surface side of the underlayer growth layer 31 as shown in FIG. 13, the formation of the n electrode 36 is not necessary on the front surface side of the underlayer growth layer 31.

The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be peeled off from the sapphire substrate relatively easily by laser ablation, and a laser beam is selectively irradiated. As a result, selective peeling is realized. The GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or in a strip shape, or may have a pyramidal structure in which a C plane is formed at an upper end portion. Further, it may be another nitride-based light emitting device, a compound semiconductor device, or the like.

Next, with reference to FIG. 12 to FIG. 23, a concrete method of a light emitting element transfer method and a light emitting element arranging method to which the present invention is applied will be described. As the light emitting element, the GaN-based light emitting diode shown in FIG. 11 is used.

First, as shown in FIG. 12, the first substrate 41
A plurality of light emitting diodes 42 are formed in a matrix on the main surface of. The size of the light emitting diode 42 is about 2
It can be about 0 μm. The constituent material of the first substrate 41 is the photodiode 4 such as a sapphire substrate.
A material having a high transmittance with respect to the wavelength of the laser beam used to irradiate 2 is used. Although the p-electrode and the like are formed in the light-emitting diode 42, the final wiring is not yet formed, and the groove 42g for element isolation is formed, and the individual light-emitting diodes 42 are in a state where they can be separated. The groove 42g is formed by, for example, reactive ion etching. When the first substrate 41 as described above is opposed to the first temporary holding member 43, as shown in FIG.
As shown in 3, selective transfer is performed.

First substrate 41 of first temporary holding member 43
A peeling layer 44 and an adhesive layer 45 are formed in two layers on the surface facing each other. Here, the first temporary holding member 43
For example, a glass substrate, a quartz glass substrate, a plastic substrate, or the like can be used. Examples of the release layer 44 on the first temporary holding member 43 include a fluorine coat, a silicone resin, and a water-soluble adhesive ( For example, polyvinyl alcohol: PVA), polyimide or the like can be used. As the adhesive layer 45 of the first temporary holding member 43, a layer made of any one of an ultraviolet (UV) curable adhesive, a thermosetting adhesive, and a thermoplastic adhesive can be used. As an example, a quartz glass substrate is used as the first temporary holding member 43, and the polyimide film 4 is used as the release layer 44.
After forming μm, a UV curable adhesive as the adhesive layer 45 is applied in a thickness of about 20 μm.

Adhesive layer 45 of first temporary holding member 43
Is adjusted so that the cured region 45s and the uncured region 45y are mixed, and the light emitting diode 42 for selective transfer is positioned in the uncured region 45y. The adjustment such that the cured region 45s and the uncured region 45y are mixed is performed by, for example, selectively exposing the UV curing adhesive to UV with an exposure machine at a pitch of 200 μm, and transferring the light emitting diode 42 to the uncured region. Other than the above, it may be cured. After such alignment,
The light emitting diode 42 at the transfer target position is irradiated with laser from the back surface of the first substrate 41, and the light emitting diode 42 is separated from the first substrate 41 using laser ablation. Since the GaN-based light emitting diode 42 decomposes into metallic Ga and nitrogen at the interface with sapphire, it can be peeled off relatively easily. An excimer laser, a harmonic YAG laser, or the like is used as a laser for irradiation.

By the peeling using the laser ablation, the light emitting diode 42 for the selective irradiation is Ga
It is separated at the interface between the N layer and the first substrate 41, and is transferred to the adhesive layer 45 on the opposite side by piercing the p electrode portion. As for the light emitting diode 42 in a region which is not irradiated with another laser, a region s where the corresponding adhesive layer 45 is hardened.
However, since the laser is not irradiated, it is not transferred to the first temporary holding member 43 side. Note that FIG.
Although only one light emitting diode 42 is selectively irradiated with laser light, it is assumed that the light emitting diode 42 is similarly irradiated with laser light in regions separated by n pitches. By such selective transfer, the light emitting diodes 42 are arranged on the first temporary holding member 43 at a distance more than when they are arranged on the first substrate 41.

The light emitting diode 42 is held by the adhesive layer 45 of the first temporary holding member 43, and the back surface of the light emitting diode 42 is on the n electrode side (cathode electrode side). Since the back surface is removed and washed so that there is no resin (adhesive), the electrode pad 46 is electrically connected to the back surface of the light emitting diode 42 by forming the electrode pad 46 as shown in FIG. .

As an example of the cleaning of the adhesive layer 45, the adhesive resin is etched by oxygen plasma and cleaned by UV ozone irradiation. Moreover, when the GaN-based light emitting diode is peeled off from the first substrate 41 made of a sapphire substrate by a laser, Ga is deposited on the peeled surface.
Are required to be etched, which is performed with an aqueous solution of NaOH or dilute nitric acid. After that, the electrode pad 4
6 is patterned. At this time, the electrode pad on the cathode side can be about 60 μm square. Electrode pad 4
As 6, a transparent electrode (ITO, ZnO type, etc.) or a material such as Ti / Al / Pt / Au is used. In the case of a transparent electrode, even if the back surface of the light emitting diode is largely covered, the light emission is not interrupted, so the patterning accuracy is rough, a large electrode can be formed, and the patterning process is facilitated.

In FIG. 14, the light emitting diode 42 is transferred from the first temporary holding member 43 to the second temporary holding member 47 to form a via hole 50 on the anode electrode (p electrode) side, and then the anode side electrode is formed. The state where the pad 49 is formed and the adhesive layer 45 made of resin is diced is shown.
As a result of this dicing, the element isolation groove 51 is formed, and the light emitting diode 42 is divided into elements. The element separation groove 51 is formed by a plurality of parallel lines extending vertically and horizontally as a plane pattern for separating the respective light emitting diodes 42 in a matrix form. The bottom surface of the element isolation groove 51 faces the surface of the second temporary holding member 47.

A peeling layer 48 is formed on the second temporary holding member 47. The release layer 48 may be, for example, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PV
A), polyimide or the like can be used.
The second temporary holding member 47 is, for example, a so-called dicing sheet in which a UV adhesive material is applied to a plastic substrate, and it is possible to use a member whose adhesive force decreases when UV is irradiated.

At the time of transfer from the first temporary holding member 43 to the second temporary holding member 47, excimer laser is irradiated from the back surface of the temporary holding member 43 having such a peeling layer 44 formed thereon. Thereby, for example, when polyimide is formed as the peeling layer 44, peeling occurs due to ablation of the polyimide at the interface between the polyimide and the quartz substrate, and each light emitting diode 42 has the second temporary holding member 47.
Transferred to the side.

When forming the anode electrode pad 49, the surface of the adhesive layer 45 is etched with oxygen plasma until the surface of the light emitting diode 42 is exposed. First, the via hole 50 can be formed by using an excimer laser, a harmonic YAG laser, or a carbon dioxide gas laser. At this time, the via hole has a diameter of about 3 to 7 μm. The anode side electrode pad is Ni / Pt / Au
And so on. As the dicing process, dicing using a normal blade and laser processing using the above laser are performed when a narrow cut of 20 μm or less is required. The cut width depends on the size of the light emitting diode 42 covered with the adhesive layer 45 made of resin in the pixel of the image display device.

Next, the light emitting diode 42 is transferred from the second temporary holding member 47 to the second substrate 60. In transferring the light emitting diode 42, first, the light emitting diode 42 is taken out from the second temporary holding member 47 by using a mechanical means.

FIG. 15 is a diagram showing that the light emitting diode 42 is taken out to the vacuum suction head 83. And
To take out the light emitting diode 42, the above-mentioned method for taking out the element is applied.

Here, in order to take out the light emitting diode 42 from the second temporary holding member 47, a vacuum suction head 83 as shown in FIG. 16 is used. The vacuum suction head 83
It is configured to include a metal plate 52 and a suction device 53,
On the surface of the metal plate 52, formed corresponding to the shape of the resin-formed chip (the light emitting diode 42 and the adhesive layer 45),
A suction hole 81 is provided for fitting the resin-formed chip and mounting the resin-formed chip. Further, in the substantially central portion of the suction hole 81, a suction hole that is an opening portion for sending in or sucking air from the back surface of the metal plate 52, that is, the surface opposite to the side where the suction hole 81 is formed. 55 is provided. At this time, the suction holes 55 are opened in a matrix at the pixel pitch of the image display device so that a large number of light emitting diodes 42 can be sucked together. The opening diameter at this time is, for example, about 100 μm, and the openings are formed in a matrix with a pitch of 600 μm, and about 300 pieces can be adsorbed at once. The member of the suction hole 55 at this time is, for example, one manufactured by Ni electroforming or a metal plate 5 such as SUS.
2 is used as a hole processed by etching, and metal plate 5
An adsorption chamber 54 is formed in the back of the second suction hole 55. By controlling the pressure of the suction chamber 54, it is possible to send or suck air from the suction hole 55 to the outside. Become. Then, the light-emitting diode 42 can be sucked by controlling the pressure of the suction chamber to a negative pressure. At this stage, the light emitting diode 42 is covered with the adhesive layer 45 made of resin, and the upper surface thereof is substantially flattened. Therefore, selective suction by the vacuum suction head 83 can be easily promoted.

In order to take out the light emitting diode 42 from the second temporary holding member 47 using such a vacuum suction head 83, first, as shown in FIG. 17, the vacuum suction head 8 is used.
Ethanol is applied to the adsorption holes 81 of No. 3 and left for about 5 minutes. As a result, ethanol enters the suction holes 55 by the capillary phenomenon as shown in FIG.

Next, the pressure of the adsorption chamber 54 is controlled while ethanol is in the suction hole 55, that is, the pressure of the adsorption chamber 54 is increased to a predetermined amount of air from the adsorption chamber 54 side to the outside. To the suction hole. By sending a predetermined amount of air to the suction hole 55,
The ethanol that has filled the suction holes 55 is pushed upward by a predetermined amount, and becomes a state where it is accumulated around the suction holes 55 in the suction holes as shown in FIG.

Next, the second temporary holding member 47 and the vacuum suction head 83 correspond to a desired positional relationship, that is, the light emitting diodes 42 arranged in the second temporary holding member 47 correspond to the suction holes 81. The second temporary holding member 47 and the vacuum suction head 8 are arranged so that the light emitting diode 42 and the suction hole 81 of the vacuum suction head 83 face each other so as to have a positional relationship.
Place 3 and. Further, as shown in FIG. 20, the second temporary holding member 47 and the vacuum suction head 83 are brought close to each other to bring the ethanol 82 accumulated in the suction hole 81 into contact with the light emitting diode 42. As a result, the light emitting diode 42 is pulled toward the suction hole 81 by the surface tension of the ethanol 82, and is held at a predetermined position, that is, a position corresponding to the suction hole 81.

Then, in this state, the laser beam 84 is emitted from the back surface of the second temporary holding member 47. This allows
For example, when the peeling layer 48 is formed of polyimido, peeling occurs due to ablation of the polyimide at the interface between the polyimide and the quartz substrate. Then, the pressure of the adsorption chamber 54 is controlled, that is, the pressure is lowered to move the ethanol 82 in the suction hole 55 below the suction hole 55, that is,
Suction hole 5 by suctioning to the side opposite to the side where suction hole 55 is provided
By sucking out the light emitting diode 42 and further sucking the light emitting diode 42, the light emitting diode 42 fits in the suction hole 81 in a normal positional relationship, and the light emitting diode 42 can be taken out to the vacuum suction head 83.

Then, the light emitting diode 42 taken out to the vacuum suction head 83 is mounted on the second substrate 60. That is, as shown in FIG. 21, the adhesive layer 56 is applied to the second substrate 60 in advance, the adhesive layer 56 on the lower surface of the light emitting diode 42 is cured, and the light emitting diode 42 is fixed to the second substrate 60. Arrange. At the time of this mounting, the suction chamber 54 of the suction device 83 is in a high pressure state,
The bonded state due to the adsorption of the adsorption device 53 and the light emitting diode 42 is released.

Here, the adhesive layer 56 is a thermosetting adhesive,
It is composed of a thermoplastic adhesive or the like.

The position where the light emitting diode 42 is arranged is
It is separated from the arrangement on the temporary holding members 43 and 47. At that time, energy (laser light 73) for curing the resin of the adhesive layer 56 is supplied from the back surface of the second substrate 60 as shown in FIG. At this time, the second substrate 6
Laser light 73 is irradiated from the back surface of 0 to heat only the adhesive layer 56 in a portion corresponding to the resin-formed chip (the light emitting diode 42 and the adhesive layer 45) to be transferred. This allows
When the adhesive layer 56 is a thermoplastic adhesive, the adhesive layer 56 at that portion is softened and then cooled and cured to fix the resin-formed chip on the second substrate 60. Similarly, even when the adhesive layer 56 is a thermosetting adhesive, only the adhesive layer 56 in the portion irradiated with the laser beam 73 is cured and the resin-formed chip is fixed onto the second substrate 60. .

Further, the electrode layer 57 which also functions as a shadow mask is provided on the second substrate 60, and the electrode layer 57 is heated by irradiating it with the laser beam 73 to indirectly heat the adhesive layer 56. You may do it. In particular, if the black chrome layer 58 is formed on the screen side surface of the electrode layer 57, that is, the side on which the viewer of the image display device is present, the contrast of the image can be improved and the black chrome layer 58 can be formed. The energy absorption rate can be increased so that the adhesive layer 56 can be efficiently heated by the selectively irradiated laser light 73.

FIG. 22 shows a light emitting diode 4 of three colors of RGB.
It is a figure which shows the state which arranged 2, 61, 62 on the 2nd board | substrate 60, and applied the insulating layer 59. When the mounting position on the second substrate 60 is shifted to the position of the color by the above-described method, the pixel pitch remains constant at 3 pixels.
Pixels composed of colors can be formed. As the insulating layer 59, a transparent epoxy adhesive, a UV curable adhesive, polyimide or the like can be used. Light emitting diodes 42, 6 of three colors
The numbers 1 and 62 do not necessarily have to be the same. In FIG. 22, the red light emitting diode 61 has a structure that does not have a hexagonal pyramidal GaN layer, and its shape is different from the other light emitting diodes 42, 62. At this stage, however, each of the light emitting diodes 42, 61, 62 has already been Since the resin forming chip is covered with the adhesive layer 45 made of resin, the same handling can be realized despite the difference in the element structure.

FIG. 23 is a diagram showing a wiring forming process. Openings 65, 66, 67, 68, 69, 70 in the insulating layer 59
Is a diagram in which the wirings 63, 64 and 71 for connecting the anode and cathode electrode pads of the light emitting diodes 42, 61 and 62 and the wiring electrode layer 57 of the second substrate 60 are formed. The openings, that is, the via holes, formed at this time are the electrode pads 46 of the light emitting diodes 42, 61 and 62,
Since the area of 49 is large, the shape of the via hole is large, and the positional accuracy of the via hole can be formed with a coarser accuracy than the via hole formed directly in each light emitting diode. The via holes at this time are about 60 μm square electrode pads 46, 4
With respect to 9, it is possible to form a film having a diameter of about 20 μm. Further, the depth of the via hole has three kinds of depth, one for connecting to the wiring substrate, one for connecting to the anode electrode, and one for connecting to the cathode electrode. Therefore, it is controlled by the number of laser pulses to open the optimum depth. . After that, a protective layer is formed on the wiring to complete the panel of the image display device. A material such as a transparent epoxy adhesive can be used for the protective layer at this time, as in the insulating layer 59 of FIG. This protective layer is heat-cured to completely cover the wiring. After that, the driver IC is connected from the wiring at the end of the panel to manufacture the drive panel.

In the method of arranging the light emitting elements as described above, the distance between the elements is already increased when the light emitting diodes 42 are held by the first temporary holding member 43, and the expanded spacing is used. And relatively large electrode pad 4
6, 49, etc. can be provided. Wiring is performed using the electrode pads 46 and 49 having a relatively large size, so that the wiring can be easily formed even when the size of the final device is significantly larger than the element size. Further, in the method of arranging the light emitting elements of this example, the electrode pads 46 and 49 can be accurately formed by covering the periphery of the light emitting elements with the hardened adhesive layer 45 and planarizing. Further, the transfer of the light emitting diode 42 to the first temporary holding member 43 utilizes the fact that the GaN-based material decomposes into metallic Ga and nitrogen at the interface with the sapphire and can be peeled off relatively easily. Transferred securely. Further, in the transfer of the light emitting diode 42 to the second substrate (second transfer step), when the light emitting diode 42 is taken out to the suction device 83, the suction holes 8 are formed.
The ethanol 82 is interposed between the first and the suction holes 55 and brought into contact with the light emitting diode 42, and then the light emitting diode 42 is sucked and held. As a result, the light emitting diode 42 can be taken out to the suction device 83 in a normal state without causing a problem such as tilting of the light emitting diode 42.

[0085]

The method of taking out the device according to the present invention uses a take-out head having a recess corresponding to the shape of the device,
The element is sucked and held by supplying the liquid to the recess.

In the method of taking out the element according to the present invention as described above, since the element can be held in advance at a predetermined position corresponding to the suction hole by supplying the liquid to the concave portion, the element can be kept in a normal state. Can be held by adsorption.

The element transfer method according to the present invention is an element transfer method for transferring the elements arranged on the first substrate onto the second substrate, and is a step of removing the elements to a take-out head. And a mounting step of mounting the element taken out by the take-out head on the second substrate. The taking-out step uses a take-out head having a concave portion corresponding to the shape of the element, and supplies the liquid to the concave portion. The element is held by suction.

According to the element transfer method of the present invention as described above, since the above-mentioned element extraction method is applied, it is possible to prevent the element from being mounted in an inclined manner, and the element transfer is accurately performed. be able to.

The element arranging method according to the present invention is the element arranging method of rearranging a plurality of elements arranged on the first substrate on the second substrate. A first transfer step in which the elements are transferred so as to be separated from the arranged state, and the elements are held in the first temporary holding member; and the elements held in the first temporary holding member A step of hardening the resin with a resin, a step of dicing the resin to separate the elements, and a step of further separating the elements held by the first temporary holding member and hardened with the resin onto the second substrate. The second transfer step has a take-out step of transferring the element to the take-out head and a mounting step of mounting the element taken out by the take-out head on the second substrate. , A take-out port that has a recess corresponding to the element shape Using a draw, in which the element holding suction by feeding the liquid to the recess.

According to the element arraying method of the present invention as described above, since the above-mentioned element taking-out method and transfer method are applied, the elements can be accurately transferred and the distance between the elements can be reduced. It is possible to smoothly carry out enlargement transfer for enlarging.

The method of manufacturing the image display device according to the present invention is the method of manufacturing an image display device in which the light emitting elements are arranged in a matrix, and is separated from the state in which the light emitting elements are arranged on the first substrate. A first transfer step of transferring the light emitting element so as to be in a state and holding the light emitting element on the first temporary holding member; and a step of hardening the light emitting element held by the first temporary holding member with resin. A step of dicing the resin into individual light emitting elements and a second transfer step of transferring the light emitting elements held by the first temporary holding member and solidified with the resin to the second substrate while further separating them. The second transfer step includes a take-out step of transferring the light-emitting element to a take-out head, and a mounting step of mounting the light-emitting element taken out by the take-out head on the second substrate, and the take-out step emits light. Compatible with element shapes Using a pick head having a recess, it is intended for attracting and holding the light-emitting element by supplying a liquid to the recess.

According to the method for manufacturing an image display device of the present invention as described above, a light emitting element manufactured in a dense state, that is, by performing fine processing with a high degree of integration, is used as a method for taking out the element, an element. By applying the transfer method and the element arranging method described above, it is possible to accurately rearrange and rearrange, and thus it is possible to manufacture a highly accurate image display device with high productivity.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a state in which an adhesive layer and an element are formed on a base substrate.

FIG. 2 is a schematic cross-sectional view showing an example of a process in a device taking-out method according to the present invention.

FIG. 3 is a schematic cross-sectional view showing an example of a process in a device taking-out method according to the present invention.

FIG. 4 is a schematic cross-sectional view showing an example of a process in a device taking-out method according to the present invention.

FIG. 5 is a schematic cross-sectional view showing an example of a process in a device taking-out method according to the present invention.

FIG. 6 is a schematic cross-sectional view showing an example of a process in a device taking-out method according to the present invention.

FIG. 7 is a schematic cross-sectional view showing an example of a process in a device taking-out method according to the present invention.

FIG. 8 is a schematic view showing a method of arranging elements.

FIG. 9 is a schematic perspective view of a resin-formed chip.

FIG. 10 is a schematic plan view of a resin-formed chip.

11A and 11B are diagrams showing an example of a light emitting element, in which FIG. 11A is a sectional view and FIG. 11B is a plan view.

FIG. 12 is a schematic sectional view showing a first transfer step.

FIG. 13 is a schematic cross-sectional view showing an electrode pad forming step.

FIG. 14 is a schematic cross-sectional view showing an electrode pad forming step after the transfer to the second temporary holding member.

FIG. 15 is a schematic cross-sectional view showing a method of taking out an element in a second transfer step.

FIG. 16 is a schematic cross-sectional view showing one structural example of a vacuum suction head.

FIG. 17 is a schematic cross-sectional view showing a method of taking out an element in the second transfer step.

FIG. 18 is a schematic cross-sectional view showing a method of taking out an element in a second transfer step.

FIG. 19 is a schematic cross-sectional view showing a method of taking out an element in the second transfer step.

FIG. 20 is a schematic cross-sectional view showing a method of taking out an element in a second transfer step.

FIG. 21 is a schematic cross-sectional view showing the transfer method of the element in the second transfer step.

FIG. 22 is a schematic cross-sectional view showing a step of forming an insulating layer.

FIG. 23 is a schematic cross-sectional view showing a wiring forming step.

FIG. 24 is a schematic cross-sectional view showing a conventional element transfer method.

FIG. 25 is a schematic cross-sectional view showing an example of a process in a conventional device extraction method.

[Explanation of symbols]

1 base board 2 Heat removable layer 3 elements 4 Vacuum suction head 5 liquid 6 adsorption holes 7 suction holes 10 First substrate 11 First temporary holding member 12 elements 13 resin 14 Resin-formed chips 15 Second substrate,

Claims (11)

[Claims] 1. A method of taking out an element, characterized in that a taking-out head having a concave portion corresponding to the shape of the element is used, and the element is sucked and held by supplying a liquid to the concave portion. 2. The method for extracting an element according to claim 1, wherein the liquid is a volatile liquid. 3. The method for taking out an element according to claim 1, wherein a suction hole is provided on the bottom surface of the recess, and holding by suction is also used. 4. The method of extracting an element according to claim 1, wherein the liquid is ethanol. 5. The method for extracting an element according to claim 1, wherein the element is embedded in an insulating material. 6. A method of transferring an element, wherein elements arranged on a first substrate are transferred to a second substrate, comprising a step of taking out the element to a take-out head, and a step of taking out the element at the take-out head. A step of mounting the element on the second substrate, and the step of taking out the element is performed by using a take-out head having a concave portion corresponding to the shape of the element and supplying a liquid to the concave portion. A method for transferring an element, which is characterized in that the element is adsorbed and held. 7. An element arranging method for rearranging a plurality of elements arranged on a first substrate on a second substrate, wherein the elements are spaced apart from the state in which the elements are arranged on the first substrate. Transferring the element so as to be in the state described above and holding the element on the first temporary holding member, and a step of hardening the element held on the first temporary holding member with resin. And a step of dicing the resin to separate each element, and a step of further separating the element held by the first temporary holding member and hardened with the resin and transferring the element onto the second substrate. And a transfer step, the second transfer step,
It has a take-out step of transferring the element to a take-out head, and a mounting step of mounting the above-mentioned element taken out by the take-out head on the second substrate, wherein the take-out step forms a recess corresponding to the element shape. A method of arranging elements, characterized in that the extraction head is provided and the liquid is supplied to the recesses to adsorb and hold the elements. 8. The distance to be separated in the first transfer step is approximately an integral multiple of the pitch of the elements arranged on the first substrate, and the distance to be separated in the second transfer step is the first 8. The element arranging method according to claim 7, wherein the pitch is approximately an integral multiple of the pitch of the elements arranged on the temporary holding member in the transfer step. 9. The device arranging method according to claim 7, wherein the device is a semiconductor device using a nitride semiconductor. 10. The element is a light emitting element, a liquid crystal control element,
8. An array of elements according to claim 7, which is an element selected from a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element, a micro magnetic element, a micro optical element, or a portion thereof. Method. 11. A method of manufacturing an image display device in which light emitting elements are arranged in a matrix, wherein the light emitting elements are transferred so that the light emitting elements are spaced apart from the arrayed state of the light emitting elements on the first substrate. Then, a first transfer step of holding the light emitting element on the first temporary holding member, a step of hardening the light emitting element held on the first temporary holding member with a resin, and dicing the resin. And a second transfer step of separating the light-emitting elements for each light-emitting element and transferring the light-emitting element held by the first temporary holding member and fixed by the resin to the second substrate while further separating the light-emitting elements. The second transfer step includes a take-out step of moving the light-emitting element to a take-out head and a mounting step of mounting the light-emitting element taken out by the take-out head on the second substrate. But above A method of manufacturing an image display device, characterized in that a take-out head having a recess corresponding to the shape of the light emitting element is used and liquid is supplied to the recess to adsorb and hold the light emitting element.