JP2003031634A - Substrate mounting device and substrate processing device - Google Patents

Abstract

[PROBLEMS] To measure the temperature of a semiconductor, especially a silicon substrate, in a non-contact manner. A substrate mounting apparatus includes a substrate mounting table having a mounting surface on which a processing target substrate is mounted, and one end opposed to the processing target substrate mounted on the substrate mounting table. And at least one optical path member 4 arranged so as to perform the operation. Light in a wavelength range having energy higher than the band gap energy of the substrate 9 to be processed is introduced through the optical path body 4 toward the substrate 9 to be processed, and Raman scattered light generated from the substrate 9 to be processed is derived. The temperature measuring device 10 converts the Raman scattered light derived by the substrate
And measure the temperature. The substrate processing apparatus is configured to process the substrate 9 d based on the temperature measured by the temperature measuring apparatus 10.
Temperature adjustment.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing of a silicon substrate or the like, and relates to a substrate placing device, a temperature measuring device, and a substrate processing device including these, which are necessary for processing a substrate to be processed with good reproducibility. .

[0002]

2. Description of the Related Art With the miniaturization of semiconductor devices and the increase in diameter of silicon substrates, temperature control of silicon substrates has become an important factor. For example, an etching apparatus that processes a silicon substrate in a vacuum, a film forming apparatus that uses a sputtering method, a CVD method (chemical vapor deposition method), vapor deposition, or the like, and a baking process before and after applying a resist to form a pattern on a silicon substrate. Extremely strict conditions are required for temperature control in the baking apparatus, and accurate temperature measurement is required.
Further, in order to reduce the processing time of a large number of substrates, it is required that the processing time of each step be short, and a short measurement time is also required in temperature measurement.

There are various possible means for heating the substrate,
Due to the environmental conditions in which the silicon substrate is placed, a heating method in which the silicon substrate is brought into direct contact with a high temperature portion such as a heater block to conduct conductive heating is effective. For example, a silicon substrate is almost transparent to infrared wavelengths,
Radiant heating with a lamp heater has extremely poor heating efficiency. Further, when the temperature of the silicon substrate is raised in vacuum, it cannot be heated by convection.

Therefore, in a silicon substrate processing apparatus, when it is necessary to precisely control the temperature and raise the temperature in a short time, a heater for raising the temperature of the silicon substrate or a uniform temperature over the entire surface of the substrate is used. In order to maintain the temperature, a heating method of directly contacting a metal soaking block is adopted. In this case, in many configurations, the heater is embedded in the heater block (soaking block). Usually, these heaters and heater blocks are higher in temperature than the silicon substrate in order to raise the temperature of the silicon substrate in a short time.

In order to control the temperature of the silicon substrate, it is necessary to measure the temperature of the silicon substrate. In the temperature measurement of the silicon substrate, conventionally, a temperature sensor such as a thermocouple embedded in the heater block is used to estimate the temperature of the silicon substrate from the temperature of the heater block.

In the temperature measurement using such a temperature sensor, when the silicon substrate is placed on the heater block whose temperature is kept constant, the temperature of the heater block is once lowered by the silicon substrate, and then the heater block is increased with time. Is adjusted to the set temperature. After this,
It is estimated that the temperature of the silicon substrate and that of the heater block became the same after a certain period of time while keeping the temperature of the heater block constant.

However, in the temperature measurement by embedding the temperature sensor in the heater block, the temperature of the silicon substrate is not directly contacted and measured, and it takes time until the heater block and the silicon substrate reach a temperature equilibrium state. There is a problem of this, and there is a problem that the time until the temperature becomes uniform varies depending on the type of the film attached to the silicon substrate.

In general, an infrared temperature measuring method is known as a method of directly measuring the temperature of a substance without contact.
However, since the band gap of a semiconductor lowers the emissivity of light in the infrared region and allows infrared light to pass through, if this infrared temperature measurement method is applied to a silicon substrate and temperature measurement is performed, the backside of the silicon substrate In this case, infrared light from a substance such as a heater block in which the silicon substrate exists is measured, and the temperature of the silicon substrate cannot be measured.

[0009]

As a solution to this problem, by utilizing the property that the center of radiant energy approaches the visible region when the temperature of the silicon substrate becomes high, the radiant light in the region near this visible light is measured. It has been proposed to measure the temperature of a silicon substrate. However, the infrared temperature measuring method has a problem that it cannot be measured unless it has a high temperature as described above, and that radiated light from another high temperature portion near the silicon substrate is detected as noise. However, if the intensity of the radiated light from the high temperature portion is high, the temperature of the high temperature portion is measured instead of the silicon substrate that is the measurement target.

In the proposed measuring method, the emissivity differs depending on the surface condition of the silicon substrate, so that it is necessary to measure the emissivity every time the surface condition of the substrate changes. Therefore, the present invention solves the above-mentioned conventional problems,
It is intended to measure the temperature of a semiconductor, especially a silicon substrate, in a non-contact manner.

[0011]

According to the present invention, the temperature of a substrate to be processed such as a silicon substrate is measured by applying temperature measurement using Raman scattering. A configuration suitable for performing temperature measurement by Raman scattering is provided. Further, the temperature measuring device of the present invention is configured to include the substrate mounting device of the present invention, and the temperature is measured using Raman scattered light obtained by the substrate mounting device. Furthermore, the substrate processing apparatus of the present invention is configured to include the substrate placing apparatus and the temperature measuring apparatus of the present invention, and performs temperature adjustment, substrate processing in a vacuum atmosphere, and substrate processing in the atmosphere.

According to the substrate placing apparatus of the present invention, a substrate placing table having a placing surface on which a substrate to be processed is placed, and one end of the substrate placing table facing the substrate to be processed placed on the substrate placing table. With a configuration including at least one optical path body to be arranged,
Light in a wavelength range having energy higher than the band gap energy of the substrate to be processed is introduced toward the substrate to be processed through the optical path member, and Raman scattered light generated from the substrate to be processed is derived. With the configuration of this substrate mounting device, Raman scattered light can be derived from the substrate to be processed. When the substrate to be processed is a silicon substrate, the band gap of the silicon substrate (for example, 1.11e at 300K).
Raman scattered light can be derived by irradiating visible light having a wavelength of energy higher than V).

The substrate mounting apparatus of the present invention can be configured in various modes in the arrangement of the optical path body. In one aspect of the substrate placing apparatus, the substrate placing table has at least one opening opening on a placing surface on which the substrate to be processed is placed, and the optical path body is inserted into the opening, and one end of the optical path body is placed. It is arranged to be placed in the opening from the mounting surface. In addition, a plurality of openings are two-dimensionally distributed on the mounting surface, one end of the optical path body is arranged in an arbitrary opening, and the plurality of optical path bodies are arranged two-dimensionally. It is possible to measure the two-dimensional temperature distribution on the surface of the substrate to be processed.

In another aspect of the substrate placing apparatus, one end of the optical path body is arranged so as to be arranged at a position facing the side surface or the upper surface of the substrate to be processed placed on the substrate placing table, and the optical path body or the substrate placing apparatus is placed. By moving at least one of the mounts, one end of the optical path body is scanned with respect to the surface of the processing target substrate mounted on the substrate mount. With this configuration, it is possible to measure the two-dimensional temperature distribution on the surface of the processing target substrate.

In another aspect of the substrate placing apparatus, one end of at least one of the optical path bodies can be arranged at a position facing the upper surface of the substrate to be processed placed on the substrate placing table, and the other of the optical path bodies can be arranged. One end of at least one of the optical path bodies can be arranged at a position facing the lower surface of the processing target substrate mounted on the substrate mounting table. With this configuration, it is possible to measure the temperature of both surfaces of the substrate to be processed.

Further, in the structure of the optical path body, a confocal lens having a focal position on the surface of the substrate to be processed mounted on the substrate mounting table is provided at one end of the optical path body. With this configuration, the accuracy of the measurement point due to Raman scattering can be improved. The substrate mounting table may be configured to include a heating unit and an electrostatic attraction unit that electrostatically attracts the processing target substrate by a voltage, and the processing target substrate may be a substrate containing silicon.

The temperature measuring device of the present invention comprises temperature measuring means together with the substrate mounting device of the present invention. The temperature measuring means of the present invention derives Raman scattered light through the optical path body by the substrate mounting device of the present invention, and the scattered light intensity of this Raman scattered light,
The temperature of the substrate to be processed is measured based on at least one of the wavelength and the intensity ratio of the anti-Stokes scattered light and the Stokes scattered light included in the Raman scattered light. The substrate processing apparatus of the present invention includes a temperature adjusting device as well as the temperature measuring apparatus of the present invention. The temperature adjusting means of the present invention adjusts the temperature of the processing target substrate placed on the substrate placing table based on the temperature measured by the temperature measuring device.

Further, the substrate processing apparatus of the present invention comprises a processing chamber together with the substrate placing apparatus of the present invention. A substrate mounting table is arranged in the processing chamber, light is led in and out between the inside and outside of the processing chamber through an optical path body, and Raman spectroscopy and temperature measurement are performed outside the processing chamber. Further, by forming the processing chamber as a vacuum chamber, it is possible to perform a film forming process such as an etching process, a sputtering process, and a vapor deposition process in a vacuum atmosphere.
Baking treatment, exposure treatment, heat treatment and the like can be performed in the atmosphere.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a schematic diagram for explaining an outline of a substrate placing device, a temperature measuring device, and a substrate processing device of the present invention, and here, an etching process is shown as an example of the substrate processing. Substrate processing apparatus 20
The substrate mounting apparatus 1 for mounting the processing target substrate 9 such as a silicon substrate in the processing chamber 21 is provided, and the temperature measuring device 10 for measuring the temperature of the processing target substrate 9 is provided outside the processing chamber 21.
A cathode electrode 22 is provided on the ceiling side in the processing chamber 21, and a power source 23 is connected to the cathode electrode 22. The inside of the processing chamber 21 can be vacuum-exhausted by an exhaust device (not shown), and CV in a vacuum atmosphere can be achieved.
D, film forming processing such as vapor deposition processing and etching processing are performed. In addition, baking processing is performed by setting the inside of the processing chamber 21 as an atmospheric atmosphere
It is also possible to perform processing such as exposure processing and heat treatment.

The substrate mounting apparatus 1 includes a substrate mounting table 2 for mounting the processing target substrate 9 on the mounting surface and a moving mechanism (not shown) for moving the processing target substrate 9, and the substrate mounting table 2
Is disposed on the bottom wall of the processing chamber 21. Substrate processing apparatus 20
After heating the processing target substrate 9 placed on the substrate mounting table 2 to a predetermined temperature, the cathode electrode 22 is energized to perform a film forming process, an etching process, and the like. The cathode electrode 22 and the mounting surface of the substrate mounting table 2 are arranged so as to be parallel to each other. The substrate mounting table 2 includes a heater 2a for heating the substrate mounting table 2 to a predetermined temperature, two electrostatic adsorption electrodes 2b for electrostatically adsorbing the target substrate 9 on the mounting surface, a heater 2a and electrostatic adsorption. A dielectric 2c that electrically insulates the electrodes 2b from each other and that conducts heat from the heater is layered, and power sources 3a and 3b are connected to the heater 2a and the electrostatic attraction electrode 2b, respectively.

When the heater 2a is energized to generate heat, the heat is transferred to the electrostatic attraction electrode 2b via the dielectric 2c having high thermal conductivity.
Heat transfer to. At this time, when a positive voltage and a negative voltage are applied to the two electrostatic attraction electrodes 2, the processing target substrate 9 is electrostatically attracted to the mounting surface, and the thermal conductivity between the processing target substrate 9 and the substrate mounting table 2 is increased. Is very high. Therefore, the substrate 9 to be processed is quickly heated by the heater 2a. The substrate mounting table 2 is provided with an opening 5 penetrating the heater 2a, the electrostatic attraction electrode 2b, and the dielectric 2c, and the optical path body 4 is inserted therein. The optical path member 4 can be composed of an optical fiber, and its diameter is set to a size that can be inserted close to the inner wall surface of the opening 5. The upper tip of the optical path body 4 is arranged at a position lower than the mounting surface of the substrate mounting table 2, and when the processing target substrate 9 is mounted on the mounting surface, the upper tip of the optical path body 4 is placed. The part is in a non-contact state by being configured not to contact the back surface of the substrate 9 to be processed. The optical path member 4 is inserted into the bottom wall surface of the processing chamber 21 in an airtight state, the lower end portion thereof is drawn out of the processing chamber 21, and the leading end portion thereof is guided to the temperature measuring device 10.

The temperature measuring device 10 is a Raman spectroscopic device 11
Also, the temperature measuring means 12 is provided, and the temperature of the processing target substrate 9 is measured using the Raman scattered light derived from the processing target substrate 9. One end of the Raman spectroscopic device 11 is the substrate placement device 1
The other end of the optical path body 4 attached to is attached, the laser light is irradiated to the processing target substrate 9 through the optical path body 4, and the Raman scattered light generated in the processing target substrate 9 is received. The Raman spectroscopic device 11 is a light source that emits laser light, a notch filter for removing Rayleigh scattered light from Raman scattered light, a spectroscope or a filter that disperses anti-Stokes scattered light and Stokes scattered light in Raman scattered light, and In addition to a detector that detects Stokes scattered light and Stokes scattered light, various optical systems that switch the optical paths of laser light and Raman scattered light are provided. The light source is, for example, YA
A light source which emits G laser 532 nm light can be used.

The substrate 9 to be processed in the substrate processing apparatus 20.
When the processing of (1) is performed, it can be performed by the following procedure. First, the inside of the processing chamber 21 is set to a vacuum atmosphere, and the substrate 9 to be processed is placed on the substrate mounting table 2 which is heated in advance by the heater 2a.
Is placed, and the temperature of the substrate 9 to be processed is measured by the temperature measuring device 10 in this state. In the temperature measurement by the temperature measuring device 10, when the processing target substrate 9 in the processing chamber 21 is irradiated with the laser light from the laser light source provided in the Raman spectroscopic device 11 through the optical path body 4, the processing target substrate 9 is irradiated with the Raman spectroscopy by the laser light irradiation. Scattered light is generated. The Raman scattered light generated on the substrate 9 to be processed passes through the optical path body 4 and the same optical path as the laser light, and again the Raman spectroscope 11
To introduce. The Raman scattered light introduced into the Raman spectroscope 11 includes Rayleigh scattered light having the same wavelength as the irradiated laser light, Stokes scattered light whose peak wavelength is shifted to the long wavelength side, and anti-Stokes scattered light whose peak wavelength is shifted to the short wavelength side. I'm out. Rayleigh scattered light is removed from the Raman scattered light by a notch filter, the Stokes scattered light and the anti-Stokes scattered light are separated using a spectroscope or a filter, and either or both of them are detected by a detector such as a CCD.

Since the values of the shift amount, wavelength, peak width, peak intensity ratio, etc. of the peak wavelengths of the Stokes scattered light and the anti-Stokes scattered light depend on the temperature, the temperature of the substrate 9 to be processed can be obtained from these values. it can. Temperature measurement using Raman scattered light is obtained by the intensity ratio of anti-Stokes scattered light and Stokes scattered light in Raman scattered light, or by the deviation of peak wavelength or peak width of anti-Stokes scattered light or Stokes scattered light. Etc. are known. In the case of a silicon substrate, it is known that first-order Raman scattered light (Stokes light and anti-Stokes light) is generated at a position energy-shifted by approximately ± 510 cm ^{−1 with} respect to the energy of the irradiated laser light. The temperature can be measured by accurately measuring this energy shift amount, or by measuring the intensity of Stokes light or anti-Stokes light, or the intensity ratio of two scattered lights. For example, when the temperature is obtained from the intensity ratio of two scattered lights, if the intensity of Stokes light is Is and the intensity of anti-Stokes light is Ias, the intensity ratio of the two is I.
as / Is = EXP [-Es / (kT)] (E
It is known that s is Raman shift energy and k is Boltzmann coefficient, and Es is determined by the material (for silicon, it is about 510 cm ⁻¹ as described above).
Therefore, the temperature T can be obtained.

The temperature measuring device 10 of the present invention removes Rayleigh scattered light from the Raman scattered light guided through the optical path body 4 in the Raman spectroscope 11 and then separates the anti-Stokes scattered light and the Stokes scattered light into anti-Stokes scattered light. Find light and Stokes scattered light. The temperature measuring means 12 obtains the intensity, shift of the peak wavelength, peak width, etc. from the obtained anti-Stokes scattered light and Stokes scattered light, and measures the temperature using these values. The substrate processing apparatus 20 includes a temperature adjusting unit 24 and adjusts the temperature using the temperature of the processing target substrate 9 obtained by the temperature measuring apparatus 10. The temperature adjustment can be performed, for example, by controlling the power supply 3a that drives the heater 2a so that the measured temperature becomes the preset temperature of the processing target substrate 9.

Next, another structural example of the substrate mounting apparatus of the present invention will be described with reference to FIGS. 2 to 8, only the configuration of the substrate placing device is described, and the description of the temperature measuring device and the substrate processing device is omitted. However, the substrate placing device described here is the same as the example described in FIG. 1. The same can be applied to the temperature measuring device and the substrate processing device.

An example of the configuration of the substrate placing device shown in FIGS.
It is an example of arranging the optical path body on the side surface side of the substrate to be processed. In FIG. 2, the substrate mounting device 1 includes a substrate mounting table 2 and an optical path body 4 as in the configuration example shown in FIG. The optical path body 4 is
The tip portion is arranged so as to face the side surface of the processing target substrate 9 placed on the mounting surface of the substrate mounting table 2, and the side surface of the processing target substrate 9 is irradiated with laser light and emitted from the side surface. The Raman scattered light is guided to the temperature measuring device 10. The substrate mounting device 1 includes a drive mechanism 6 as a mechanism that causes the optical path body 4 to face the side surface of the processing target substrate 9. The drive mechanism 6 drives the optical path member 4 in the lateral direction, for example, to cause the optical path member 4 to move.
The leading end of the substrate is moved toward or away from the side surface of the substrate 9 to be processed. In addition, the drive mechanism 6 prevents interference with the optical path body 4 when the substrate 9 to be processed is mounted on or removed from the mounting surface of the substrate mounting table 2.
The optical path body 4 may be configured to be driven in the vertical direction and the rotation direction.

FIG. 3 is a schematic view showing an arrangement state of the optical path body 4, and shows the substrate 9 to be processed and a part (the tip side) of the optical path body 4 as viewed from above. In the configuration example shown in FIG. 3A, a plurality of optical path bodies 4 (4 a to 4 d) are arranged on the outer periphery of the processing target substrate 9 in the circumferential direction. In the configuration example shown in FIG. 3B, the optical path body 4 is arranged on the outer periphery of the processing target substrate 9, and the processing target substrate 9 or the optical path body 4 is rotated with the center of the processing target substrate 9 as a rotation axis. . The rotation of the substrate 9 to be processed can be performed by incorporating a rotation mechanism into the substrate mounting table 2 or by attaching a rotation mechanism to the substrate mounting table 2, and the rotation of the optical path body 4 is performed by the driving mechanism 6 by the rotation mechanism. Can be incorporated or a rotation mechanism can be attached to the substrate mechanism 6. According to the configuration shown in FIG.
The temperature and temperature distribution of the outer peripheral portion of the substrate 9 to be processed can be known.

An example of the structure of the substrate placing device shown in FIGS.
In this example, the optical path body is arranged above the substrate to be processed. Figure 4
In the above, the substrate mounting apparatus 1 includes the substrate mounting base 2 and the optical path body 4 similarly to the configuration example shown in FIG. The optical path body 4 is
The tip portion is arranged so as to face the upper surface of the processing target substrate 9 placed on the mounting surface of the substrate mounting table 2, and the upper surface of the processing target substrate 9 is irradiated with laser light and emitted from the upper surface. The Raman scattered light is guided to the temperature measuring device 10. The substrate mounting device 1 includes a drive mechanism 6 ′ as a mechanism for making the optical path body 4 face the side surface of the processing target substrate 9. The drive mechanism 6'is
By driving the optical path body 4 in, for example, the lateral direction, the vertical direction, and the rotation direction, the tip end portion of the optical path body 4 is moved toward and away from the upper surface of the processing target substrate 9.

FIG. 5 is a schematic view showing an arrangement state and a moving state of the optical path body 4, and shows a state in which the substrate 9 to be processed and a part (the tip end side) of the optical path body 4 are viewed from above. Figure 5
In the configuration example shown in (a), an arm-shaped optical path body 4 rotatably supported is provided, and at least one tip portion 4A is provided. In this configuration example, the arm-shaped optical path body 4 is rotated as indicated by a dashed arrow in the figure, so that the temperature of the position on the substrate 9 to be processed along the locus of the tip 4A of the optical path body 4 is measured. can do. Further, by rotating the processing target substrate 9 at the same time, the processing target substrate 9
The above two-dimensional temperature measurement can be performed. The rotation of the substrate 9 to be processed can be performed by incorporating a rotation mechanism into the substrate mounting table 2 or by attaching a rotation mechanism to the substrate mounting table 2.

In the configuration example shown in FIG. 5 (b), an arm-shaped optical path body 4 supported so as to be movable in a linear direction is provided, and tip portions 4A, 4B, ... Of the plurality of optical path bodies are provided. In this configuration example, the arm-shaped optical path body 4 is moved as indicated by the broken line arrow in the figure, and in this state, the substrate 9 to be processed is rotated and detected by the tip portions 4A, 4B, ... Of the plurality of optical path bodies. By doing so, two-dimensional temperature measurement on the substrate 9 to be processed can be performed. In the configuration example shown in FIG. 5C, at least the arm-shaped optical path body 4 longer than the diameter of the substrate 9 to be processed is movably provided, and the tip portions 4A, 4B of the plurality of optical path bodies are provided on the optical path body 4. ... is provided. In this configuration example, the arm-shaped optical path body 4 is moved as shown by a dashed arrow in the figure, so that the two-dimensional temperature measurement on the processing target substrate 9 can be performed.

The configuration example of the substrate placing apparatus shown in FIG. 6 is an example in which a plurality of optical path bodies are provided on the substrate placing table 2 and the temperature of the lower surface of the substrate to be processed is measured. In FIG. 6A, the substrate mounting device 1 includes the substrate mounting base 2 and the optical path body 4 as in the configuration example shown in FIG. The substrate mounting table 2 has a heater 2
A, a plurality of openings 5a, 5b, ... penetrating the electrostatic attraction electrode 2b and the dielectric 2c are provided, and a plurality of optical path bodies 4a, 4b are inserted therein. A plurality of optical path bodies 4a, 4b,
Are optically coupled to one optical path body by the optical switch 7 and attached to the temperature measuring device 10. In addition,
The arrangement of the optical path bodies 4a, 4b, ... On the substrate mounting table 2 and the installation of one optical path body in the processing chamber 21 in an airtight state can be performed in the same manner as the configuration example shown in FIG.

FIG. 6 (b) is a view showing the arrangement of the openings 5a, 5b, ... And the optical path bodies 4a, 4b ,. Opening 5a,
5b, ... Are provided in a dispersed manner on the mounting surface of the substrate mounting table 2.
The optical path body 4 may be arranged in all the openings 5a, 5b, ... Or the optical path body 4 may be arranged only in the openings arbitrarily selected from the openings 5a, 5b ,. it can. The optical path bodies 4a, 4b, ...
The lower surface of the laser is irradiated with laser light, and the emitted Raman scattered light is guided to the temperature measuring device 10. Temperature measuring device 10
Is capable of performing two-dimensional temperature measurement on the substrate 9 to be processed by distinguishing and detecting the Raman scattered light from each of the optical path bodies 4a, 4b, ....

The configuration example of the substrate placing apparatus shown in FIG. 7 is an example of measuring the temperature of the upper surface and the lower surface of the substrate to be processed. In FIG. 7, the substrate mounting apparatus 1 includes a substrate mounting table 2 and an optical path body 4 as in the configuration example shown in FIG. 1, and the substrate mounting table 2 includes a heater 2a, an electrostatic attraction electrode 2b, and a dielectric. 2c
The optical path body 4a is inserted into the opening 5 provided through the optical path body 4a, and the optical path body 4b is provided above the substrate mounting table 2 so that the tip portion thereof faces the upper surface of the processing target substrate 9. The other ends of the optical path members 4a and 4b are attached to the temperature measuring device 10. The arrangement of each optical path body 4a on the substrate mounting table 2 and the installation of the optical path bodies 4a and 4b in the processing chamber 21 in an airtight state can be the same as in the configuration example shown in FIG.

The optical path bodies 4a and 4b irradiate the lower surface and the upper surface of the substrate 9 to be processed with laser light, and guide the Raman scattered light emitted to the temperature measuring device 10. Temperature measuring device 1
0 measures the temperature of the lower surface of the processing target substrate 9 by the Raman scattered light from the optical path body 4a, and measures the temperature of the upper surface of the processing target substrate 9 by the Raman scattered light from the optical path body 4b.

FIG. 8 illustrates an example of the configuration of the tip portion of each optical path body described above. In the configuration example shown in FIG. 8, a confocal lens 8 is provided at the tip portion of the optical path body 4, and the laser light emitted from the tip portion of the optical path body 4 is focused by the confocal lens 8 at a predetermined position on the substrate 9 to be processed. At the same time, the Raman scattered light emitted from the irradiation position is focused again on the tip portion of the optical path member 4. According to this configuration, by converging the laser light on a predetermined position of the substrate 9 to be processed, the measurement position can be narrowed and the measurement accuracy can be improved, and by condensing the Raman scattered light, It is possible to increase strength and reduce noise.

FIG. 8A shows an example of a structure in which the optical path member 4 and the confocal lens 8 are provided in the substrate mounting table 2 to measure the temperature of the lower surface of the substrate 9 to be processed, and FIG. 8C is a configuration example in which the optical path body 4 and the confocal lens 8 are provided above the table 2 and the temperature of the upper surface of the processing target substrate 9 is measured.
Is an optical path body 4 and a confocal lens 8 on the side surface side of the substrate mounting table 2.
Is a configuration example in which the temperature of the side surface of the processing target substrate 9 is measured.

[0038]

As described above, according to the present invention, the temperature of a semiconductor, particularly a silicon substrate, can be measured without contact. Further, according to the substrate placing apparatus of the present invention, it is possible to provide a substrate placing apparatus suitable for non-contact measurement of the temperature of the substrate to be processed, and according to the temperature measuring apparatus of the present invention, the substrate placing apparatus of the present invention is provided. By using the mounting device, it is possible to perform non-contact and short-time temperature measurement using Raman scattered light of the substrate to be processed, and according to the substrate processing device of the present invention, the substrate mounting device of the present invention By using the temperature measuring device, the temperature control of the substrate to be processed can be performed in a short time.

[Brief description of drawings]

FIG. 1 is a schematic diagram for explaining an outline of a substrate placing device, a temperature measuring device, and a substrate processing device of the present invention.

FIG. 2 is a schematic diagram for explaining a configuration example in which an optical path body is arranged on the side surface side of a processing target substrate in the substrate mounting device of the present invention.

FIG. 3 is a schematic diagram for explaining the arrangement of the optical path body on the side surface side of the processing target substrate in the substrate mounting device of the present invention.

FIG. 4 is a schematic diagram for explaining a configuration example in which an optical path body is arranged above a substrate to be processed in the substrate mounting device of the present invention.

FIG. 5 is a schematic diagram for explaining the arrangement of the optical path body above the substrate to be processed in the substrate mounting device of the present invention.

FIG. 6 is a schematic diagram for explaining a configuration example in which a plurality of optical path bodies are arranged below a processing target substrate in the substrate mounting device of the present invention.

FIG. 7 is a schematic diagram for explaining a configuration example in which an optical path body is arranged above and below a substrate to be processed in the substrate mounting device of the present invention.

FIG. 8 is a schematic diagram for explaining a configuration example of a tip portion of the optical path body of the present invention.

[Explanation of symbols]

1 ... Substrate placing device, 2 ... Substrate placing table, 2a ... Heater,
2b ... Electrostatic attraction electrode, 2c ... Dielectric material, 3a, 3b ... Power supply, 4, 4a, 4b, 4c, 4d ... Optical path body, 4A, 4B
... Tip part, 5 ... Opening part, 5a, 5b, 6, 6 '... Drive mechanism, 7 ... Optical switching device, 8 ... Confocal lens, 9 ... Processing substrate, 10 ... Temperature measuring device, 11 ... Raman spectroscopic device , 12 ... Temperature measuring means, 20 ... Substrate processing apparatus, 21 ...
Processing chamber, 22 ... Cathode electrode, 23 ... Power supply, 24 ... Temperature adjusting means.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/3065 H01L 21/302 C 5F045 H05B 3/00 310 21/30 567 5F046 F term (reference) 2F056 VF11 VF16 VF17 VF20 3K058 AA42 BA14 CA12 CA70 4K029 CA01 CA05 DA03 EA08 4M106 AA01 DH02 DH11 DH32 DJ01 5F004 AA16 BA04 BB22 BB24 BB26 BC08 BD04 BD05 CA04 DB01 5F045 AA07 AF03 DP02 CK08F04EM05 GB05 EK08 EM08 GB05 EK08 EM08 GB05 EK08 EM08 GB05

Claims (14)

[Claims] 1. A substrate mounting table having a mounting surface on which a substrate to be processed is mounted, and at least one optical path arranged so that one end faces a substrate to be processed mounted on the substrate mounting table. A substrate placing apparatus for introducing Raman scattered light generated from the processing target substrate by introducing light in a wavelength range having energy higher than the bandgap energy of the processing target substrate through the optical path body toward the processing target substrate. . 2. The substrate mounting table has at least one opening opening on a mounting surface on which a substrate to be processed is mounted, and the optical path body is inserted into the opening, and one end of the optical path body is mounted on the mounting base. The substrate mounting device according to claim 1, wherein the substrate mounting device is disposed in the opening from the surface. 3. A plurality of optical path bodies are two-dimensionally arranged by disposing a plurality of openings on a mounting surface in a two-dimensional manner and disposing one end of the optical path body in an arbitrary opening. Item 2. A substrate mounting device according to item 2. 4. The substrate mounting apparatus according to claim 1, wherein one end of the optical path body can be arranged at a position facing a side surface or an upper surface of a substrate to be processed mounted on the substrate mounting table. 5. The at least one of the optical path body and the substrate mounting table is moved to scan one end of the optical path body with respect to a surface of a processing target substrate mounted on the substrate mounting table. 4. The substrate mounting device according to 4. 6. One end of at least one optical path member of the optical path member can be arranged at a position facing an upper surface of a processing target substrate mounted on the substrate mounting table, and at least one of the other optical path members. 3. The substrate mounting apparatus according to claim 1, wherein one end of the optical path body can be arranged at a position facing a lower surface of the processing target substrate mounted on the substrate mounting table. 7. The confocal lens according to claim 1, wherein one end of the optical path body is provided with a confocal lens having a focal position on a surface of a substrate to be processed mounted on a substrate mounting table. Substrate mounting device. 8. The substrate mounting table according to claim 1, wherein the substrate mounting table includes a heating unit and an electrostatic adsorption unit that electrostatically adsorbs the target substrate by a voltage. apparatus. 9. The substrate mounting device according to claim 1, wherein the substrate to be processed is a silicon substrate or another semiconductor substrate. 10. The substrate mounting device according to claim 1, further comprising: a temperature measuring unit, wherein the temperature measuring unit scatters Raman scattered light derived through the optical path body. A temperature measuring device that measures the temperature of a substrate to be processed based on at least one of light intensity, wavelength, and intensity ratio of anti-Stokes scattered light and Stokes scattered light included in Raman scattered light. 11. A temperature measuring device according to claim 10,
A substrate processing apparatus comprising: temperature adjusting means for adjusting the temperature of a substrate to be processed placed on a substrate mounting table, wherein the temperature adjusting means adjusts the temperature based on the temperature measured by the temperature measuring device. 12. A processing chamber, and the substrate mounting device according to claim 1, wherein the substrate mounting table is disposed in the processing chamber, and the inside of the processing chamber is passed through an optical path body. A substrate processing apparatus that guides light in and out between the outside and the outside. 13. The substrate processing apparatus according to claim 12, wherein the processing chamber is a vacuum chamber and performs an etching process or a film forming process. 14. The processing chamber performs at least one of baking, exposure, and heat treatment.
The substrate processing apparatus according to claim 12.